527733 五、發明說明（l) 【發明領域】 本叙明係有關於—種薄膜電晶體（Th i n F i 1 m 1rans i stor ，丁FT )製 i生士、+ ^ 胺I曰m"版运方法，特別是有關於一種改善薄 膜電日日體製程之光阻顯影的方法。 【習知技術】 ，膜，晶體（TFT)可使用在液晶顯示器（LCD) 丁 口0彳為開關疋件。所謂薄膜電晶體面板（TFT 、 =膜枯Λ指於透明破璃上構成陣列式的顯示晝素，更 以薄膜技術製作積體電路而 ^ 將構成元件之各種不同材料 早：-上作私序疋 植知：：逐土堆疊出所要製作之線路與元件。 子佈 由旋轉Hi外ί:液2ί噴灑於玻璃基板的中心處，藉 加熱，此步驟稱為、、軟烤，，。 ，、、、板上 光罩上的圖案定義於“曰“u订曝先製程’將- 液由基板一端塗佈至另一：谁最後’用描掃方式將顯影 顯像。 ㈣至另、，進行-顯影製程，使光阻層 第1圖為傳統之加熱板丨2 於加熱板12上進行敕妹，廿士 4也4 = 0敬嘴基板丨8係置 )14所#声 車烤 由熱板12上的支撐針（Din 牙。之後，進行曝光製程，將一光罩 義於光阻層上。接基 田丄 尤罩上的圖案定 循-定方向將顯；：二顯影液經噴嘴16則依 _上的：：;;；塗：=璃基板18上，用"與玻璃基 九阻層反應’進而進行顯影步驟。然而，喷嘴16 第4頁 # 0632-798nW(N);D90017；amy.ptd 527733 五、發明說明（2) =起始端20和終點端22所塗佈的顯影液會有 異，一般約相差10秒左右，造成起始端2 2 景;時間不同’使得起始端20與顯影液反應的時=的： 此起始端20所形成的圖案之關鍵尺（ 平又人 u = mension ) CDl小於終點端22所形成的圖案之關鍵尺 CD2’如第2圖所示。 【發明之目的及概要】 有鑑於此，本發明提出一種可以使顯影的起始端和终 點端所形成的圖案具有相同的關鍵尺寸之方法。 、 ^因此，本發明提供一種改善薄膜電晶體製程之光阻顯 〜的方法，包括·將玻璃基板置於一加熱板上，使玻璃基 板上的光阻層之硬化程度隨顯影方向遞增，接著，於完= 曝光製程後，將顯影液經由一喷嘴依該顯影方向噴灑於光 阻層上，並使光阻層之顯影速度隨顯影方向遞增。' 、 本發明並提供一種改善薄膜電晶體製程之光阻顯影的 方法，包括：將玻璃基板置於一加熱板上，且使玻璃^板 的溫度隨顯影方向遞減，接著，於完成曝光製程後，^顯 衫液經由一喷嘴依顯影方向喷灑於光阻層上，以將光阻層 顯影。 曰 本發明並提供一種改善薄膜電晶體製程之光阻顯影的 方法’包括·將玻璃基板置於一加熱板上，此加熱板上言受 置有複數個支撐針，用以支撐玻璃基板，且這些支持針的 高度隨顯影方向遞增，接著，於完成曝光製程後，將顯影 液經由一喷嘴依顯影方向噴灑於光阻層上，以將光阻層顯527733 V. Description of the invention (l) [Field of the invention] This description is about a thin film transistor (Th in F i 1 m 1rans i stor, Ding FT) made by i Shengshi, + amine I said m " edition This method, in particular, relates to a method for improving the photoresist development of a thin-film electrical system. [Know-how] Films and crystals (TFTs) can be used in liquid crystal display (LCD) port 0 as switching elements. The so-called thin-film transistor panel (TFT, = film dry) refers to the formation of an array-type display element on a transparent broken glass, and the integrated circuit is made using thin-film technology. Zhi Zhizhi :: The circuits and components to be made are stacked one by one. The sub-cloth is sprayed on the center of the glass substrate by rotating Hi: Li 2Li and heated by heating. This step is called, soft roasting, ... The pattern on the photomask on the board is defined in "Yu", the first process is to apply-the liquid is applied from one end of the substrate to the other: who last 'develops the image by scanning.' -Development process, making the photoresist layer the first picture is a traditional heating plate 丨 2 The sister on the heating plate 12, 廿 士 4 also 4 = 0 Jingzu substrate 丨 8 set) 14 ### The supporting pin (Din teeth) on the plate 12. After that, the exposure process is performed, and a photomask is defined on the photoresist layer. The pattern on the mask of Kita Yoyo is set to follow-the direction will be displayed ;: two developing solutions pass through the nozzle 16 are based on :: ;;; Coating: = on glass substrate 18, use " to react with glass-based nine barrier layer ' The developing step is performed. However, the nozzle 16 page 4 # 0632-798nW (N); D90017; amy.ptd 527733 V. Description of the invention (2) = The developer solution applied at the start end 20 and the end end 22 will be different. Generally, the difference is about 10 seconds, which causes the scene at the starting end 2 2; the time is different when the starting end 20 reacts with the developing solution =: The key of the pattern formed by this starting end 20 (flat and human u = mension) CDl The key size CD2 'smaller than the pattern formed by the end point 22 is shown in Fig. 2. [Objective and summary of the invention] In view of this, the present invention proposes a pattern that can form the pattern formed at the start and end points of the development. The method with the same critical dimensions. Therefore, the present invention provides a method for improving the photoresistance of a thin film transistor process, including: placing a glass substrate on a heating plate to harden the photoresist layer on the glass substrate. The degree increases with the developing direction, and then, after the exposure process is completed, the developing solution is sprayed on the photoresist layer through a nozzle in the developing direction, and the developing speed of the photoresist layer is increased with the developing direction. Provide an improvement A method for photoresist development in a thin film transistor process includes: placing a glass substrate on a heating plate, and decreasing the temperature of the glass substrate with the development direction, and then, after the exposure process is completed, the display liquid passes through a nozzle Spraying on the photoresist layer according to the developing direction to develop the photoresist layer. The invention also provides a method for improving the photoresist development of the thin film transistor process, which includes: placing a glass substrate on a heating plate, and heating A number of support pins are placed on the board to support the glass substrate, and the height of these support pins increases with the developing direction. Then, after the exposure process is completed, the developing solution is sprayed onto the photoresist layer in a developing direction through a nozzle. To display the photoresist layer
527733 五、發明說明（3) 影。 【實施例】 為了使 的關鍵尺寸 使與顯影液 液反應時間 顯影方向遞 同的關鍵尺 在此實 佈，以改變 而達到調整 以下將 晶體製程之 實施例之一 首先於 熱板32進行 除，使其硬 支撐針34不 38的溫度則 板3 8和加熱 此實施例中 向5 0遞增， 由於玻 層3 9的軟烤 顯影的起始端和終 ，本發明係調整起 反應時間較久的起 較短的終點端之顯 增，以使起始端和 寸。 施例中係藉由控制 光阻層於顯影的起 顯影速度的目的。 配合第3圖和第4圖 光阻顯影的方法。 種顯影製程中之加 玻璃基板38上塗佈 軟烤’軟烤的目的 化。加熱板3 2上方 會導熱’其係用以 是經由加熱板32的 板3 2之間的距離會 ’係藉由控制支持 以使玻璃基板38的 璃基板3 8的溫度隨 程度不同，靠近顯 點端所形成的圖案具有相同 始端和終點端的顯影速度， 始端之顯影速度慢於與顯影 衫速度，意即使顯影速度隨 終點端所形成的圖案具有相 軟烤時玻璃基板的溫度分 始端和終點端之軟烤程度， 詳細說明本發明改善薄膜電 第3圖係表示本發明一較佳 熱板的示意圖。 一層光阻層3 9後，即藉由加 疋將光阻層3 9中的溶劑趨 配置有許多支撐針34，這些 支撐玻璃基板38。玻璃基板 熱輻射而傳熱，因此玻璃基 影響玻璃基板38的溫度。在 針34的高度，使其隨顯影方 溫度隨顯影方向5 〇遞減。 顯影方向5 0遞減，使得光阻 影方向50起始端40之光阻層527733 V. Description of the invention (3) Shadow. [Example] In order to make the key size and the developing direction of the reaction time of the developing solution are the same as the key rule, and change it to achieve adjustment, one of the following examples of the crystal process is first removed on the hot plate 32. The temperature of the hard supporting needles 34 and 38 is increased to 50 in this embodiment. Because of the beginning and end of the soft baking development of the glass layer 39, the present invention adjusts the longer reaction time. Significant increase from the shorter end point to make the start point and inch. The purpose of this embodiment is to control the development speed of the photoresist layer during development. Match the method of Figure 3 and Figure 4 photoresist development. In the development process, the purpose of coating the glass substrate 38 with soft baking is used. The heat conduction above the heating plate 32 will be 'the distance between the plates 32 and 2 through the heating plate 32' will be controlled by the control to make the temperature of the glass substrate 38 of the glass substrate 38 vary with the degree, close to the display The pattern formed at the point end has the same development speed at the start and end points. The development speed at the start end is slower than the development shirt speed, meaning that even if the development speed varies with the pattern formed at the end end, the temperature of the glass substrate at the start and end points is soft. The degree of soft roasting is described in detail. The third embodiment of the present invention is a schematic diagram of a preferred hot plate of the present invention. After a photoresist layer 39 is formed, the solvent in the photoresist layer 39 is arranged with a plurality of supporting pins 34, and these supporting glass substrates 38. The glass substrate transmits heat due to heat radiation, so that the glass substrate affects the temperature of the glass substrate 38. At the height of the needle 34, it is decreased gradually by 50 in the developing direction with the temperature on the developing side. The developing direction 50 decreases, so that the photoresist layer in the shadow direction 50 starts at 40 and ends at the photoresist layer.
527733 五、發明說明（4) 二：：：!1被趕出的量多於終點端42之光阻層39，因此起 =2阻層39的硬化的程度較終點端42高，也就是起 始鈿4 0之先阻層3 9結構較緊密。 層39ί後，進行曝光製程，將—光罩上的圖案定義於光阻 逐+ 3 ^史二描知方式將顯影液經喷嘴36依循顯影方向5。 將颂衫液贺灑於玻璃基板38 的光阻層39反應，進而進行顯影步驟肖-玻璃基板38上 緊宓由：m6的起始端4〇之光阻層39的結構較終點端42 ，山：成？始端40之顯影速度會慢於終點端42之 1。，此，本發明藉由.控制軟烤步驟之起始端4〇和级點端 if 的差異’來補償顯影步驟之顯影時間的差里“，以 :=4二=3:所形成的圖案之關鍵尺寸。一^^ =先阻層39所形成的圖案之關鍵尺寸叫相當，如第4圖 【發明之特徵與效果】 、、’’丁、上所述本發明至少具有下列優點和特徵： 1. 藉由控制顯影速度，使光阻層之顯影速度隨 :遞增位於顯影液喷嘴起始端和終 居二 案具有相同的關鍵尺寸。 1續之圖 2. 本發明係控制軟烤步驟中之玻璃基板的溫度， 璃基板的溫度隨顯影方向遞減，以使光阻層於顯影步^ 顯影速度隨顯影方向遞增，使位於顯影液噴嘴起始端和線 點端的光阻層之圖案具有相同的關鍵尺寸。 、、s il 0632-7981TWF(N);D90017;aray.ptd 第7頁 527733 、發明說明（5) 針之高度，使玻璃基板與加熱板 而使玻璃基板的溫度隨顯影方向 噴嘴起始端和終點端的光阻層之 3 ·本發明係控制支稽^ 的距離隨顯影方向遞增二 遞減，藉此使位於顯影液 圖案具有相同的關鍵尺寸 雖然本發日月已以幸交佳實施例揭露如 限制本發明，任彳^ 了 μ化丨門掏路如上，然其並非用以 神和範圍内，告可供苗i ,、 κ 在不脫離本發明之精 去車巳国内田可做更動與潤飾，因此本 田事德财夕Φ含主· Μ «τ» χ月之保否蔓車色圍 ，俊附之曱明專利範圍所界定者為準。 固527733 V. Description of the invention (4) Two:: !! 1 is driven out more than the photoresist layer 39 of the end 42, so the hardness of the resistance layer 39 is higher than that of the end 42, that is, the start The first resistive layer 3 9 has a tighter structure. After layer 39d, an exposure process is performed, and the pattern on the photomask is defined as photoresistive + 3 ^ The second method is to pass the developing solution through the nozzle 36 in the developing direction 5. The solution of the photoresist layer 39 sprinkled on the glass substrate 38 is reacted, and then the developing step is performed. The structure of the photoresist layer 39 on the glass substrate 38 is tighter than that of the end 42 of m6. :to make? The developing speed of the starting end 40 is slower than that of the ending end 42-1. Therefore, the present invention compensates for the difference in the development time of the developing step by controlling the difference between the initial end 40 and the step end if of the soft baking step, "= 4 = 2 = 3: Key dimensions. ^^ = The key dimensions of the pattern formed by the first resistance layer 39 are equivalent, as shown in Figure 4 [features and effects of the invention], "", and the above-mentioned invention has at least the following advantages and characteristics: 1. By controlling the development speed, the development speed of the photoresist layer follows: Incrementally located at the beginning of the developer nozzle and the last two cases have the same key size. 1 continued Figure 2. The present invention is a control of the soft baking step The temperature of the glass substrate, the temperature of the glass substrate decreases with the development direction, so that the photoresist layer at the development step ^ The development speed increases with the development direction, so that the pattern of the photoresist layer at the beginning of the developer nozzle and the line point has the same key Dimensions: s 0632-7981TWF (N); D90017; aray.ptd page 7 527733, description of the invention (5) The height of the needle makes the glass substrate and the heating plate so that the temperature of the glass substrate changes with the developing direction of the nozzle starting end And the end of the photoresist layer 3 · The present invention controls the distance of the support to increase and decrease with the development direction, so that the developer pattern has the same key size. Although the present day and month have been disclosed in the fortunate example, if the present invention is restricted, any problem ^ The road is as above, but it is not used within the scope of God, but it can be used for Miao i ,, κ to go to the car without departing from the essence of the invention. Domestic fields can be modified and retouched. Evening Φ includes the main · M «τ» XX month's guarantee whether the car is colored, which is defined by the scope of the patent attached to Jun Ming.
0632-7981TWF(N);D90017;amy.ptd 第8頁 527733 圖式簡單說明 為讓本發明之上述目的、特徵及優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 【圖式簡單說明】 第1圖係表示傳統顯影製程之加熱板的示意圖。 第2圖係表示玻璃基板上的光阻層經顯影後，其圖案 的關鍵尺寸於起始端和終點端的差異。 第3圖係表示本發明之顯影製程之加熱板的示意圖。 第4圖係表示玻璃基板上的光阻層經本發明顯影製程 後，起始端和終點端的圖案之關鍵尺寸示意圖。 【符號說明】 顯影方向〜5 0 加熱板〜1 2、3 2 支撐針〜14、34 喷嘴〜16、36 玻璃基板〜18、38 光阻層〜3 9 關鍵尺寸〜CDi、CD2 起始端〜20、40 終點端〜2 2、4 2 春0632-7981TWF (N); D90017; amy.ptd Page 8 527733 Brief description of the drawings In order to make the above-mentioned objects, features and advantages of the present invention more comprehensible, a preferred embodiment is given below with the accompanying The drawings are described in detail as follows: [Simplified description of the drawings] Figure 1 is a schematic diagram showing a heating plate of a conventional developing process. Figure 2 shows the difference between the start and end of the key dimensions of the pattern of the photoresist layer on the glass substrate after development. Fig. 3 is a schematic view showing a heating plate in a developing process of the present invention. Fig. 4 is a schematic diagram showing the key dimensions of the pattern of the starting and ending ends of the photoresist layer on the glass substrate after the development process of the present invention. [Symbol description] Development direction ~ 5 0 Heating plate ~ 1 2, 3 2 Support pins ~ 14, 34 Nozzles ~ 16, 36 Glass substrate ~ 18, 38 Photoresistive layer ~ 3 9 Key dimensions ~ CDi, CD2 Start ~ 20 、 40 End point ~ 2 2, 4 2 Spring
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