TW201207892A - Substrate processing method - Google Patents

Abstract

The substrate processing method comprises the exposing steps S13, S15 which expose the substrate two or more times and the heat-treating step S16 which heats the substrate after the exposing steps and before developing the substrate. The heating-treatment temperature of the heat-treating step S16 is corrected based on the elapsed time until starting the heat-treatment after the first exposure is finished.

Description

201207892 ^When heating treatment and development are performed to form a light-off case, the difference between the processing widths and the line width of the photoresist pattern between the substrates can be reduced. [Embodiment] <Best Mode for Carrying Out the Invention> Next, a mode for carrying out the invention will be described with reference to the drawings (Embodiment) Hereinafter, a substrate processing method according to an embodiment will be described with reference to Figs. 8 to 8'. And a coating and developing treatment system for the substrate processing method. First, the coating and developing treatment system according to this embodiment will be described with reference to 1®1 to Fig. 3'. Fig. 1 is a schematic view showing the outline of the composition of the fine filming process according to the embodiment. Fig. 2 is a front elevational view showing the outline of a coating development multi-processing system, and Fig. a is a rear view showing the outline of a coating development processing system. 1 As shown in Fig. 1, the coating and developing process edge includes a number provided on both sides of the sandwich device A! The processing system 1G and the second processing system u. The first part of the system is to connect the substrate cassette station 12, the processing station 13 and the interface station 14 to the second, and the board S box station 12 is in the form of a crystal box 'from the outside and the coated scene ^ Send a 25-piece wafer w, or a crystal_box C. The processing station B is a processing unit in which a plurality of processing apparatuses of a plurality of predetermined processing are arranged in a plurality of stages in a single-stage step. The transfer portion of the wafer w is transferred between the tether and the exposure device A. Further, the substrate g and the 12, the processing station π, and the interface station 14 are sequentially disposed toward the side of the exposure device Α # γ direction (the right direction in Fig. 1), and the interface station is connected to the exposure device. . ' a 2〇^m box ^ 3 crystal ® S box mounting table 2G, crystal_box mounting::::: strictly along the X direction (up and down in Figure 1) arbitrarily placed into: slab sheet metal station 12 A crystal conveying body 22 is provided which is movable along the X side on the conveying path 21. The wafer transport body 22 can also be arbitrarily moved along the wafer arrangement direction _ direction; vertical direction, = widened in the crystal, and selectively contacted with the wafer w disposed in the up and down direction in H f C The wafer conveyance body 22 is rotatable about an axis (θ direction) in the vertical direction, and is 5201207892 = each processing device of the third processing device group ω described later on the processing station 13 side performs the grouping five-way device G2 In the χ direction of the processing station 13, the third place _ middle box station ❻理农集 group g5 is arranged in order. In the third processing group G3m^ Contact is made to transport the wafer w. Further, a second transport device 31 is provided between G5. The second H system can selectively contact the devices of the 苐2 processing device group G2 and the fourth processing device group to transport the wafer. W overlaps a photoresist forming device that supplies a predetermined amount of liquid to the wafer. The bottom coating device 43:::: an antireflection film that reflects light. In the second processing device group G2, ΐϋίίϊ processing device 'For example, the developing solution is supplied to the wafer w to carry out ΐΐ; ==, (DEV) 5 〇 to 54. Also, in the first processing device group (7); The segments ' are respectively provided with chemical chambers (CHM) 60 and 61 for supplying various processing liquids to the processing devices of the respective processing device groups G. For example, as shown in Fig. 3, in the third processing device group G3, the next two ^^ tfcTv2 T^iTCP)7°' im^£(TRs&gt;71^ ΐ ί minus butterfly mail fine) 75~78 ° transfer money 71 series for the transmission of 曰曰 round w曰. High-precision temperature control device? 2~74 series The Japanese yen temperature is lowered by high-precision temperature management. Further, the heat treatment devices 75 to 78 process the wafer %孰. The fourth processing|set group G4' is superimposed in a ten-segment manner from bottom to top: for example 201207892 Ask the precision temperature adjustment device (CPL) 80, the pre-baking device (PAB) 81-84 and the post-baking device ~ 89. The pre-baked money 81-84 is the wafer after the photoresist coating process is processed. The post-baking apparatus 85 to 89 heats up the wafer w after the development process, and the heat treatment apparatus of the plurality of wafers cn is superimposed in a ten-stage manner by the lower society, for example, high-precision adjustment The temperature device (°^) 9〇~ is the post-exposure feeding device (PEb) 94~99 of the heat treatment device. As shown in the wide view 1, in the χ direction of the third conveying device 3G The upper two have _ set two): the segment is as shown in Fig. 1 'the interface station 14 is provided with the &gt; = (2) body 111, and the buffer crystal cassette m. The wafer, the interface station is exposed by the exposure device A, the buffer crystal The devices in the device are in contact with each other to transfer the wafers w~12 and the wafer processing device 120 of the processing device group, and the feeding device 12〇V is placed on the side of the wire. The diameter 123 is moved up and the transport path to the f direction can be moved in the Z direction, and the wafer W can be transported by the contact between the exposure A and the sixth processing. Also, the wafer 厘 box (2) into

The alignment function of the alignment. The device 120 is provided with a wafer W. The sixth processing device group G6 and the buffer wafer are aligned in the Y direction. The H is arranged along the x direction, and the H is arranged in the transport path 123. The device group G6 is arranged in a four-stage sequence from the bottom to the top. : J Figure 2 shows the grilling device (pEB) 13第~133 after exposure at the 6th place. Further, j is used as a wafer W for accommodating a plurality of sheets of the heat treatment apparatus (see Fig. 3). The buffer crystal_box 121 can be temporarily 201207892. As shown in Fig. 1, for example, the substrate width measuring device 140 for measuring the line width of the photoresist pattern on the wafer w is provided in the substrate cassette station 12. Next, a baking apparatus after exposure will be described with reference to Figs. 4 and 5 . Further, after the exposure, the substrate processing method of the present invention is used for the substrate processing method of the present invention, and Fig. 4 is a longitudinal cross-sectional view showing the outline of the structure of the post-exposure baking apparatus according to the present embodiment. The ® 5 shows a schematic cross-sectional view of the baking after exposure according to this embodiment. π 罝 罝 罝 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 珉 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光Part 152. As shown in Fig. 4, the heating unit 151 includes a lid body 16 〇 which is located on the upper side and can be disposed on the lower side of the lid body 16 and the cover body 16 . In the center of the ceiling portion of the lake, the exhaust portion i6〇a' is provided to uniformly discharge the ambient atmosphere in the processing chamber s from the exhaust portion 160a. 170 There is a hot plate in the center for heating the wafer W = 〇. The hot plate 170 is formed in a substantially disk shape having a thickness f. In the hot plate 17A, the built-in 171 is formed, for example, in the vicinity of the central portion of the temperature control system of the main body control unit 22, the heat control device 172, and is formed to penetrate the second lift pin 180 in the thickness direction from the hot plate 170. The bottom rises and ^== has, 4=: above. No 170 f Rim 5 When the chamber s is out, for example, an inert gas 19 _ surface is formed to discharge an inert gas to the inside, and the purge can be performed from the discharge port i9ia to S. Further, on the outside of the support ring 191, 201207892 is provided with a cylindrical casing 192 which is the outer periphery of the hot plate accommodating portion 161. A cooling plate 200 for placing, for example, a wafer w and cooling the cooling portion (5) adjacent to the heating portion 151 is provided. For example, as shown in Fig. 5, the cooling plate 2 is formed into a substantially flat plate shape, and the end surface of the hot plate 170 is bent outward into a convex arc shape. As shown in Fig. 4, in the cooling plate 2GG_, there is, for example, a Peltier element but a member 200a, and the cooling plate 2〇〇 can be adjusted to a predetermined set temperature. 7 The cooling plate 200 is mounted on the road 2〇1 extending toward the heating portion 15U. The plate 200 is moved to the upper side of the hot plate 170 on the side of the 151 by the drive unit 202. ... σ| For example, as shown in Fig. 5, two slits 203 along the χ direction are formed thinly on the cooling plate. The slit 203 is formed from the end surface of the heating portion 1SH of the cooling plate 200 to the vicinity of the central portion of the cooling. The slit 2〇3' prevents the cold heading plate 200 that has moved to the side of the rail portion 151 from interfering with the third lift pins 18 that protrude from the hot plate 17A. As shown in FIG. 4, the second lift pins 2〇4 are provided below the cooling plate 200. The lift pins 204 are lifted and lowered by the lift drive unit 2q5. The second lift pin profile rises from the lower side of the cooling plate 200 and passes through the slit 2〇3 so as to protrude above the cold. As shown in Fig. 5, a feed port 210 for feeding and feeding the wafer w is provided on both sides of the frame 15A via the cooling plate 2A. Now, since the other post-exposure baking devices 94 to 99 and 131 to 133 have the same configuration as the above-described exposure baking device 130, the omission of the sun and the moon is omitted. Wide measuring device. Figure 2 is a schematic longitudinal cross-sectional view of the structure. As shown in FIG. 6, the line width measuring device 14 includes: a mounting table Hi of W and an optical surface shape measuring 2 such as a χ-γ platform, and a second-order direction surface in the horizontal direction. The shape measuring material 142 includes, for example, a light irradiation portion 143, a light detecting portion i44, and a portion 145. The light irradiation unit 143 is for irradiating the wafer w with light from an oblique direction. The second method is used to detect the light reflected by the light irradiation unit 143 and reflected by the wafer w. According to the light receiving information of the light detecting unit 144, the pattern of the wafer is calculated on the wafer...201207892 =1, the line width is wide The device 14 uses, for example, a scatter measurement (3 coffee line width). In the case of using the scatterometry method, the calculation unit 145 = the light intensity distribution in the wafer surface detected by the portion 144, and the light intensity distribution is recorded. The optical closing width can be determined by determining the light-off thin line width corresponding to the first strong private cloth of the reference. The setting of the wafer 140 can be made by the wafer W relative to the light irradiation portion 143.

5 a&quot;J^aaK Round group vs. a plurality of wafers with a photoresist film~ The crystals of each of the crystals are formed after multiple exposures. 'For each wafer w, change from r70 to continuation. The placement time PED or the heat of the hot plate 170, the degree τ, * is heat-treated. Thereafter, the line width CD of the photoresist pattern of the singularity of the singularity is output to the body control ΐ ί ί, which is described later. Hunting this, the quasi-station shows the continuous placement time PED or the hot plate m to set the temperature production τ, the photoresist pattern? The i-th data or the second data of the relationship of the line width CD. The data or the second data is sent to the heater control device 172 of the exposed &amp; (for example, 94) via the main body control unit 22(). Thereafter, the heater controls the second data supplied to the heater control unit 172 or the set temperature T of the first 170. Only the 止f heat-stopping plate constitutes the wafer processing performed by the Ϊ coating processing system 1.

ItT-l ® 220 ^^ ° 220 Controls the line of the photoresist pattern on the wafer w for the line 疋jll4G. The body control unit 22. It is composed of, for example, a cpu (the central computer's general computer squad, which can be used as a general computer), and can be executed in the ^^.^., ^ π or line width measurement: the second body is taken Record the media female melon in the program of the main body control unit 220. Only next step '7 to Fig. 1G, for the use of the substrate processing method according to the embodiment of the 201207892 substrate. Figure 7 is a rib to explain the method according to the soil plate treatment The top view of each step of the process shovel =, == ΐ The top view of the photoresist in each step = Fig. = The figure is along the left side of the top view of the A-A =, the wafer of the wafer group formed by the circle The substrate processing method according to the present embodiment includes the first material preparation step (step S11), the second data preparation step, and the second data preparation step. The example is explained. Therefore, the mask 氺 早木 will be the day a® exposure: the upper exposure step can also expose the wafer more than 3 times, and the second =) two; the well A is L, by performing two exposures to form For the example of the hole chart, the two-under-first is the first exposure of the brother, and the use is extended along the longitudinal direction of the two-person exposure cover, the second exposure, using The first pattern has substantially Pi ^ Yoshiki reduction of times of light of the second mask pattern P2 times reduced. , and extending substantially vertically in the lateral direction (step sii), ^ first step = S11). In the first data preparation step, the line width is set, and the non-sustained placement time coffee and photoresist pattern is formed for the crystal composed of the plurality of wafers. 1 exposure step (step S13) to second exposure step aa® w' The first-to-one change described later is performed on each of the wafers w that are heat-treated for each wafer w, and then measured by the CD. By this, the discharge time PED and the photoresist pattern 201207892 of the relationship of the line width CD of the line pattern of the / photoresist pattern are prepared as described above, and the first exposure is the fourth (r) r^i =S13) The _ of the present invention is prepared to prepare the wafer group by the first material preparation step (step S11), which corresponds to the ith wafer in the present invention. group. Step [Cattle Steps ^ Data Preparation Steps (Step S12). In the second data preparation step, the second data is prepared in advance. The second data of the relationship between the line width CD of the photoresist pattern and the 孰 plate 170 and the m degree T is prepared in advance. 1 After the number of wafers W of the wafer group formed by the number of wafers W, the second exposure step and the step -) described later are added, and the temperature is added to the temperature τ. Thereafter, the photoresist is formed by the pair. The twinning process is performed in the development processing step (step S17) described later (step S17). The relationship between the formed photoresist pattern/, and the line width CD of the pattern is measured by the line width CD, the line width, and the line width. The second information. The set temperature τ for the plate L70 corresponds to the heating temperature in the present invention. In addition, i prepares the wafer processing of the second material: trti: heat source such as an infrared lamp replaces the hot plate, and when the wafer w is heated by a heat source such as a heat source, the temperature near the heat source or the temperature of the heat source: „w, Corresponding to the temperature of the addition in the present invention. w, the PED and the thermonuclear heat treatment between the wafers of the single-wafer group formed by the wafer w, the plural conditions are continuously placed into 2 Line 2 is a matrix of ΐ; the two variables formed by T are individually changed and set to be flat. For this, the first data preparation step can be performed together (step S1f step (step to light step) (Step-by-step). In the first exposure step (step light. Fig. f ^ f wafer 23 〇 (wafer % performs the first exposure as shown in Fig. 8 ^ exposure step (step S13) in the state of the wafer. The circle 230 (the circle is formed before the first exposure step (step S13), and the anti-reflection film 231 and the photoresist film 232 are sequentially formed on the substrate. 12 201207892 First, the wafer shown in FIG. 1 is used. Wheel body 2 ΐΐίΞΞΐ: The unprocessed wafer is spun out (two'it order L0 ΐίίΐϋ: round 23G (wafer ^ is transported to belong to _13处 _ G3 thermostat 70, and adjust the temperature to the established temperature production ^ 曰 3 wafer W) by the third conveyor 3G transmission, odor 'b 曰 = 231. Weaving, W) by The first delivery device 30 is sequentially transported to the heat treatment device 75), and is transported by the first delivery device 30 to, for example, a photoresist coating device at a charge of money. α 23〇(曰曰囫The photoresist coating device 40 supplies a predetermined amount of photoresist from the surface of the nozzle for, for example, W). Japanese yen/chuan (day 0 can make ϊίΐ should be made. For example, in this example, chemical increase) Type 贞I resists the tender length 193nm)·The exposure of the money ^; ^The wafer mo with the photoresist film 232 (wafer pre-dip, sunny A chat, and received heat treatment (pre- ^. set it = lose &amp; ancient ^) is sequentially transported by the second transport device 31 to the edge exposure, the wafer transport body 111 of the circle 14 is transported to the exposure device A. The mask is irradiated; ST originally passes the light through the established image, ie, the first: ft232, and the first exposure of the photoresist film 232, so when the ray is applied to the wafer 230 (wafer W) As shown in Fig. 8(a), the first refracting mask is used. Partially exposed, resulting in a selective insolubilization of = 232 #崎娜不生232a, and the photoresist film to the insoluble portion 232a which is insoluble in a solvent such as an organic solvent and may be cold to the agent The second pattern formed by the soluble portion 232b. 13 201207892 The first pattern p is obtained by the reduction cover R1. The first pattern p is obtained by the first extension p: as the x direction (the longitudinal direction of the left side view of Fig. 8 (8)) is extended Γ 8 (a) The left side view of the left side, you can make the first picture ί

The Pi, the width u and the interval width SP1 become fine and 96 nm, respectively. 1 卞 box:,: Standby, fine wafer 'Mei ΐ ΐ - - 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶 晶Round group. In the first example, referring to Figure 9, the crystal formed by three wafers is in the S ί diagram r = Xiyi 1 f is not connected by R. The cover replacement step (step S14) is performed to "turn" (pour S14) by the e-the first thief cover (four). The dilute mask replacement step light &lt;R1 is used in the first exposure step (step S13) 1 rev. t. Replace with the example shown in the second doubling light 9 used in the second exposure step (step S15), successively for 3 wafers, W2, Shaojin ▲=(1 ^ S13) After the paste 9 (4), the mask replacement step S15 is performed in the second exposure step (step S15). In the second exposure step (step 1st exposure (4)® W, the second exposure is performed. Fig. 8(8) (4)亍ΐϊίϊ, the wafer w of the wafer box 121 is taken out by the wafer transfer device 12〇, Han Rizhi's 21, and transported to the exposure device A. When the wafer 230 (wafer 14 201207892 $ is ^ When the wire is £A, the silk source is added to the second job. 2. So for the wafer 23〇 ( When the second exposure is applied, as shown in FIG. 3, the selected portion of the vertical resist film 232 is exposed to produce a selectively insoluble portion 232e. By selectively generating the insoluble portion 2, On the other hand, the photoresist film 22 is insoluble in the insoluble portion 232c of the solvent which is insoluble in the solvent or the like, and the second pattern p2 which can be formed in the soluble portion 232b of the Lok.

The interval width SP2 of the second pattern P2 can be made to form the first pattern P1 and the second pattern p2 in the photoresist film 232. As shown in the left side plan view of 8(b), the invisible film 232 is formed with an insoluble portion 232d composed of insoluble portions a and 2c and surrounded by a lattice-shaped non-valley β 232d. A soluble portion 232b remains. The wafer W of the second exposure is transported by the wafer transport body m of the interface station 14 to, for example, the post-exposure baking apparatus 94 of the processing station 13. In the example shown in FIG. 9, after the subsequent doubling light f shown in RC is replaced (step S14), the wafers, W2, and W3 are successively subjected to EXP-H in FIG. The second exposure step is shown (step. The second exposure step is performed for 6 (the wafer w of the step _ is sequentially heated (step S16). In the heat treatment step (step S10), according to the ^=1 The exposure step (step S13) to (4) the continuous placement time D' of the heat treatment is corrected to the set temperature τ of the hot plate no, and the wafer w is heat-treated at the corrected set temperature τ. Fig. 8(c The heat treatment step (the state of the circle of step S1) is displayed. The baking device 94 after the exposure is first fed from the feed port 21 to the wafer 15 201207892 W, and placed on the cooling plate 2 shown in FIG. Then, the wafer W is moved above the hot plate 170 by the movement of the cooling plate 2〇〇. After the wafer w is transferred from the cooling plate 2〇〇 to the first lift pin 180, it is i-th. The lift pin 18 is placed on the hot plate 17〇. The heat treatment of the wafer W (bake after exposure) is started. Then, after a predetermined time, the wafer W The first lift lock 18 is separated from the hot plate 17〇, and the crystal is finished, and the heat treatment of the circle w is completed. Thereafter, the wafer w is transferred from the first lift pin 18〇 to the portion plate 200, and the cooling plate 2〇 The crucible is cooled and transported from the cooling plate 2 to the outside of the exposed baking apparatus 94 through the feeding/discharging port 210. In the present embodiment, the heating processing step (step S16) can be continuously placed. 7 PED to predict; } Yang Chengzhi's line width _, and modify the set temperature of the hot plate 170 according to the predicted line width iff value. At this time, according to the first poor material preparation step (step Sii) The prepared data of the relationship between the continuous placement time pED and the line width CD of the resist pattern, and the continuous placement time pED

Line ί CD. Further, the second data preparation step (the second data of the line width CD of the visible resist pattern and the set temperature T of the hot plate 17G prepared in step H, and the pre-170 of the predicted line width CD) can be used. The set temperature T. I is promoted by the heat treatment step (step S16), and the soluble portions 23 north changing portions 232a and 232C are promoted. Therefore, as shown in the left side view of Fig. 8 ϋϋ the interval of the pattern Ρ1 is wide 1 Slightly reduced to SP1, and the interval width SP2 of the P2 is slightly reduced to SP2. ^ Temple, the longer the continuous placement time, the line width CD (L1, or, as shown in Figure 1 (8), hold The shooting time (4) has a linear relationship with the line width with a positive slope (sensitivity) SS1. Therefore, it can be based on the line width of the I Ϊ time (4) and the resist pattern CD_system 1st ίίΪ = sensitivity SS1 The continuation time PED is used to predict the CD. That is, the sensitivity SS1 is included in the first data. The line width of the 〃 and the spoon is larger, and the set temperature T of the hot plate 170 is larger, and the line widths cDfL1, 戋 θ are increased. That is, as shown in Figure _, the setting of the hot plate 17〇 ^^ 16 201207892 = system J has a positive slope _ degrees of straight _ system. Therefore ί ί 宽 ® no plate 17G settings The sensitivity of ^ 17 关系 of the relationship τ is compared with the previously predicted line width CD to correct the set temperature τ of the extension m. That is, the sensitivity SS2 is included in the second data /..., board ^9 towel' As an example, the time for performing the doubling mask replacement step (step S14) is TR, and the time for the grading step (step S15) is TH. Again, making TH&lt; TV. For example, $ is TV=15 seconds, TR=30 seconds, TH=25 seconds. However, TV and ΤΗ can be different, but also TV&gt;TH. 』 At this time, as shown in Figure 9 The continuous placement time pED1 of the circle W1 is PED 2TV+1TR+1TH=85 seconds. Similarly, the continuous placement time P^D2 of the circle W2 is PED2=1TV+1TR+2TH=95 seconds. The PED3 is PED3: OTV+lTR+3TH=l〇5 seconds during the continuous placement of the wafer W3. The performance placement time PED of each wafer w is different because of the first exposure step (step S13). The processing time is different from the processing time of the second exposure step (step S15). Further, after the first exposure step (step S13) is performed on all of the wafers W of the wafer group, the reticle replacement step is performed. (Step S14) 'The second exposure step is then performed on all the wafers w of the wafer group (Step S15). As an example, the sensitivity SS1 shown in Fig. 10A can be made 0.1 nm/min, and The sensitivity SS2 shown in Fig. 1(b) is 1 nm/〇c. At this time, the line widths of the photoresist patterns in the wafers W1, W2, and W3 are made CD1, CD2, and CD3. The above-mentioned LI' and L2'' of CD1, CD2, and CD3 are simplified here, and are set to L1' = L2'. Also, as described above, PED1 = 85 seconds, PED2 = 95 seconds, ΡΕΕ &gt; 3 = 1 〇 5 seconds. In this way, according to the relationship shown in Fig. 10 (8) and the value of the sensitivity ssi, CD2=CDl+0.1x(95-85)/60=CDl+0.017(nm), CD3=CDl+0.1 is formed based on CD1. x (105 - 85) / 60 = CDl + 0.034 (nm). Next, the set temperature T of the hot plate 170 when the wafers W1, W2, and W3 are heat-treated is Ί1, T2, and T3. In this way, the relationship between the relationship and the sensitivity SS2 shown in FIG. 1(b) can be set to T2=T1−0.017 (°C) and T341−0.034 (°C) based on T1. The line width CD of the photoresist pattern between the wafers W1, W2, and W3 is large. 17 201207892 2 That is, by changing the set temperature τ one by one for each wafer w, the entanglement can be eliminated, and each 曰曰 rounding time PED The difference between the turns produced by the difference is measured. Therefore, according to the present embodiment, even in the case of each wafer w, the ratio of 70 to the width T of the wafer is reduced, and the difference in the line width CD of the wafer is reduced. Further, as shown in FIG. 9, when a plurality of wafers w are successively processed, when the second exposure step is performed on the wafer W2 after the second exposure step, the wafer W1 may be subjected to a heat treatment step (step S16). ). Moreover, the 'hot plate 170 can also be divided into a plurality of hot plate areas and another heater that generates heat due to power supply, and the hot plate area is individually adjusted for the money board area by: In the heater. When the set temperature is set individually for each hot plate region, in the 1st j preparation step (step S11) and the second data preparation step (step su), S) is used for each hot plate region. The line width of the photoresist pattern is broken, and the heat plate area is prepared one by one! In the data and the second data step (to S16), according to the continuous placement time (4), the third file, the data and the second material, the hot plate area is corrected one by one, = hot tilting_set temperature, „wheat treatment.=Derivation=Difference in line width CD between circles' can also reduce the line width cd in the wafer surface (4) into the f development processing step (step S17). In the development processing step (step, I 'f 1 Wafer W development processing photoresist pattern of the object heat treatment step (step S16). Fig. 8_ shows the state of the wafer in the development processing step (step S17). 23G (% of the wafer, % of the second transfer device, % of the device, and for the development of the photoresist film on the wafer (wafer W)), using a solvent such as an organic solvent, the photoresist layer 232 is removed. The soluble portion 232b, thereby forming a photoresist pattern only as shown in Fig. 8(d), only ί 2, S2a, 232C). Thereafter, the wafer 23 (wafer W) is transported by, for example, the brother 2 | Set 31 to the post-bake device %: Accept the heating place 18 201207892 Connect the if曰π device 30 to the high-precision temperature control device 72 and S t °c, i two H from the crystal_transfer 2 2 returning the bundle of the base box station 12 to the series of crystals in the coating and developing treatment system 1; compared to the coffee comparison, the photoresist pattern between the wafers can be reduced, "the second time does not increase the processing time, and 11 to FIG. 13 are diagrams showing the timings of exposure and heat treatment of each wafer of the wafer group constituted by the wafers of Comparative Example 1 to Comparative Example 3, respectively, as shown in FIG. In the first example, the ith exposures indicated by EXP-V in Fig. 11 are successively applied to the wafers, W2, and W3. Thereafter, the refractory replacement operation by ^1 is performed in Fig. η. Then, the second exposure shown by the wafers Wb W2 and W3 = ^ is successively performed. However, in the first embodiment, in the comparative example 1, the addition 3d indicated by PEB_TG in su is continued and continued. Putting time PED to predict the set temperature of the side county correction of the line of the photoresist pattern to be formed. 'Select two' ', ,, shed, how to set the time PED, the set temperature of the hot plate is The temperature T0 is constant. In the flavor example 1 shown in Fig. 11, 'when the casting forms are the same, the continuous placement time PED1 of the wafer Wi is R^T (four) seconds. The miscellaneous land 'off W2' Set the scale between Cong for brain - +1TR + 2TH - 95 seconds. Also 'wafer W3's continuous placement time PED3 is p ED3: 〇TV+1TR+3TH=1G5 seconds. Therefore, as (4) (Tear ^ W2, W3 The line widths cm, CD2, and cd of the photoresist pattern formed thereon cannot be reduced by the difference between the line widths of the wafers. [Next, in Comparative Example 2, for the wafer W1, the first magic is used. The ith exposure shown by /xp-v in Fig. 12 is performed, and then the chrome mask replacement operation by the RC TF in Fig. 12 is performed to make the second reticle R2 of the circumference, Fig. 12 19 201207892 The second exposure shown by EXP-H. Thereafter, the doubling of the ejector is replaced, and the R1 shown in the second reticle is replaced. Then, for the wafer W2, after the U-th exposure shown by the i-th shrinking light 1:1 reticle reticle EXP-V, the image is made in the top of the top 12 by f = the second doubling mask ^ In Fig. 12, the wafer w3 is the same as the wafer w2 in the same manner as in the wafer w2 in Fig. 12, and the wafer placement, W2, and W3 are continuously placed, and the D2 and PED3 become equal. , all · 1ΤΗ == 55 seconds. The relationship shown by _ _ 10(a) is formed on the wafer w, W2, according to the figure

Cm, CD2, and CD3 will also become equal, but in the second example, in the case of processing three wafers, 1 2 3 4 5 6 7 8 9 times, which is an increase from the first embodiment. Therefore, in the third comparative example, in the comparative example 3, the first exposure indicated by (4)-V in the U is used for the wafer W1, and the doubling mask replacement operation is performed, and the second doubling light is used. The cover R2 performs the second correction shown in Fig. 13 = EXP-H. Thereafter, Ke Xing doubled the mask replacement operation: For the round circle W2, the doubling mask shown in Fig. 13 by the second reticle was used in Fig. 13 , = The exposure shown by Εχρ_ν in Figure 13 of the thinner i. 20 1 Replacement operation, for the wafer milk, use the first exposure shown in the first doubling 2 itt _V, and then replace the refractory refractory replaced by the RC in Figure 3, using the second twitch Light 4 The second exposure shown by EXP-Η in Figure 13. 5 In Comparative Example 3, the first exposure and the 6 = secondary exposure were interchanged in the wafer adjustment, W2, and W3, respectively, and the age was continued until the first exposure was 7 to the start of the heat treatment. As a result, as shown in FIG. 13, the continuous placement time PEm, coffee 2, p; ED3 of the wafers W1, 8 W2, and W3 become equal, and 9 is 1TV+1TR+1TH=70 seconds. Therefore, according to the relationship shown in Fig. 1 (8), the line widths cm, CD2, and CD3 of the resist pattern of the pattern 201207892 into the wafers wa, W2, and W3 are also equal, and the difference in line width can be reduced between the wafers. . However, in Comparative Example 3, the number of times the f-removal mask is changed to # between the three wafers is three times, although the autumn is long and the other is less than the first embodiment, so the whole ί iriτ , ΐ round w heat treatment. Since the wafers are successively replaced by the same one, the processing time is not increased, and the difference in line width between the wafers due to the continuous placement of the PED filaments can be achieved. The example of the first month of the month of the month is tied to the first exposure step (steps) angle plate ί! ίίp〗 4 light. However, the 'second pattern P2 may be any of the g patterns and the parent' may even be substantially parallel to the first pattern η without (four) 1. In the first embodiment, in the first exposure step (step S13), the second warm yak step (step S13) Between step S15), there is a doubling mask replacement step (the U exposure shovel JJ step (step S15) may be an additional exposure pulse as follows) to make the same doubling light of the second step (step S13). The cover is only exposed to tj 1 for exposure. (4) The exposure conditions of the first and second exposure steps (step milk) are different in the present embodiment. But also 4 is used for ϋ ΐ 步骤 步骤 ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) , ,PUi4^ S15) is an example for using positive photoresist. Further, in the case of using the positive light resistance I can be 21 201207892, the straight line showing the dependence of the line width CD on the continuous placement time PED in Fig. 10(a) becomes a straight line which decreases toward the right, and the sensitivity shown in Fig. 10(a) Degree SS1 becomes a negative value. Further, the straight line showing the dependence of the line width CD on the set temperature T of the hot plate 170 in Fig. 10(b) is a straight line which decreases toward the right, and the sensitivity SS2 shown in Fig. 10(b) also becomes a negative value. Further, in the present embodiment, the illustrated example predicts the line width CD of the resist pattern based on the continuous placement time pED, and corrects the set temperature T of the hot plate 170 based on the predicted value of the predicted line width CD. However, it is also possible to prepare a display of the relationship between the continuous placement time PED and the set temperature τ of the hot plate 170, and directly correct the set temperature τ of the hot plate 170 based on the data and the continuous placement time PED. Further, in the present embodiment, the case where the first material preparation step (step sn) and the second material preparation step (step S12) are included has been described. However, instead of performing the first data preparation step (step S11) and the second material preparation step (step S12), for example, the predetermined data stored by the main body control unit 220 or the outside of the coating development processing system may be used. In the substrate processing method according to the modification of the substrate processing method 2 according to the modification of the embodiment, the substrate data and the second component (the modification of the embodiment) are replaced by the predetermined data, and the substrate processing method according to the modification of the substrate processing method 2 according to the modification of the embodiment is described. The wafer w touches the set temperature τ of the hot plate G, and the wafer group of the wafer group is in the W 拙 point and the substrate according to the embodiment, and the coating can be developed by the plate processing method according to the actual array. The processing system/the yoke yoke is the same as the coating development processing system. Plate ί 2 2 η according to (4) substrate processing method and according to the implementation of the shape of the spirit system _ according to the deformation of the substrate processing two bases of the first two: human example fiber f 22 201207892 s23), doubling a mask replacement step (step S24) and a second exposure step (step [exposure step may also expose the wafer three times or more, and replace the times of the county cover with the above. The f sequent sHW1 data preparation step (step S21) and The second data preparation step, the material preparation step (step S21), and the second material preparation step (step preparation step (step S12) are the same.) The second exposure step, the first exposure step (step S23). In the exposure step (step =), after the work-time warming of the wafer w of the wafer group of the domain resistance coating process, the first exposure of the other wafers w of the wafer group is performed. For the wafer w which is formed by the formation of the antireflection film and the photoresist film into a group of 1], the first exposure is performed by the exposure package = the first exposure. (Step ^3!) In the case of 曰曰51 W2, the younger one is exposed to the flute. In the embodiment, the same as the one shown in Fig. 9 is used, and the wafer W2 is fed: (step S) After 23), the first exposure step (step 3) is also performed on the wafer. The % ^ 更 = step S24) ° doubling mask replacement step milk) Step S25). After the second exposure step (steps after the wafer W is subjected to the second exposure to the second exposure of the orderer), the composition of the wafer group. After the wafer group is purely W 彳f 2, the light is removed. The second blow of the 氓#牛_ 2 _ person exposure first. Here, 'the same for the wafer next: into the ', for the complex a_, the crystal _ crystal, 201207892 processing steps, The line width CD of the photoresist pattern formed by developing a wafer w is measured, and the set temperature T of the hot plate 170 is further corrected according to the measured value of the measured line width CD, and corrected. The other temperature W of the wafer group is heat-processed by setting the temperature τ. After the first data preparation step (step S21) and the second material preparation step (step S22), a change such as a diachronic change occurs. The first data preparation step (step S21) and the second data preparation step (step S22) are offset from the first data preparation step (step S21) and the second data preparation step. (Step S22) At this time, the wafer W which is subjected to the heat treatment step (Step S26) is immediately before The front wafer w is slightly measured for the line width CD of the photoresist pattern formed by performing the development processing step (step S27), and the deviation of the width CD from the target value is further corrected. The temperature is set to τ. Thereby, when processing the wafers of the wafer group composed of a large number of wafers W, the between the first processed wafer W and the last processed wafer w can be further reduced. , the difference in the line width. In addition, even from the time until the f! Long quasi-age step (step ^ 2nd capital solution step (step S22), each step of the county beam touches the first exposure step (step S23) In the case of a long period of time, it is possible to reduce the difference in line width 历 caused by diachronic changes, etc. In the present modification, 'the same can be used to divide the hot plate 17〇 into a plurality of hot plate regions, in each heat The heating plate of the side of the plate d-domain is powered by the surface of the hot plate, and the temperature is T, and the heat of the _ (four) = whole = Ϊ ° is used to reduce the line width between the wafers, CDT, and the same day It is possible to reduce the difference in the line width CD in the plane of the wafer. Further, in the present modification, the second pattern P2 may be a two-step process ( In step S25), the same doubling mask may be added as in the following step (step S23), and only the exposure amount g is exposed: = (four) light is emitted. Also, 'may also be the first ir exposure number = kiss and There is a case where a certain standby time 24 201207892 is required between the heat treatment steps (step gamma). Further, as long as the force σ heat treatment step is not performed between the step ii exposure step (step S25), that is, regardless of the type ^^^ It is suitable for the example of using positive photoresist. Why is the cheek of the 叩 ,, and also the 'this variant' can also be prepared in advance to show the relationship with the set temperature τ of the hot plate 170 _ PED _ paste light ί = , The material preparation frequency step S21) and the second data preparation step (step = main body control 胄 22G cloth development processing system i external storage - bedding material) are used as the first data and the second data. Although the preferred embodiment of the present invention has been described above, various modifications and changes can be made in the dry circumference of the present invention described in the scope of the patent application. Further, the present invention can be applied to a step device including a process for processing a semiconductor substrate and various substrates. * A substrate or other [schematic description of the drawings] Fig. 1 is a schematic view showing a configuration of a coating and developing treatment system according to an embodiment. Fig. 2 is a schematic view showing a configuration of a coating and developing treatment system according to an embodiment. Fig. 3 is a schematic view showing a configuration of a coating and developing treatment system according to an embodiment. Fig. 4 is a view showing a baking according to an embodiment. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a schematic cross-sectional view showing a configuration of a baking apparatus according to a hybrid level. FIG. 6 is a longitudinal cross-sectional view showing a schematic configuration of a line width measuring apparatus. A flow chart for explaining each step of the substrate processing method according to the embodiment. Port diagrams 8(a) to 8(d) show a plan view and a cross section of the photoresist of 25 201207892 in each step of the substrate processing method according to the embodiment. Fig. 9 shows the crystallographic exposure of the wafer group formed by the circle and Fig. 9 shows the timing chart when the heat treatment is performed by the complex crystal. Fig. ΙΟ^Κ)^ shows the line width CD and the continuous setting chart and the display line width. The 曰曰= relationship between the CD and the set temperature τ 1 ^ of the hot plate is shown in the comparison example i. The timing chart when the round wafer formed by the plurality of wafers is exposed and heated is processed. 12 is a timing chart showing the case where a plurality of wafers are exposed and heat-treated in Comparative Example 2. Each of the top views of the prepared group 13 is shown in Comparative Example 3, which is exposed and heated by a plurality of wafer circles. Timing chart at the time of processing. Each of Fig. 14 of the Days® group is used to explain the sequence of the substrate in the modification of the embodiment. ^ Each step [Description of main components] 1~ Coating development Processing system w to first processing system 11 to second processing system 12 to substrate cassette station 13 to processing station 14 to interface station 2 to wafer cassette mounting table 21 to transfer path 22 to wafer transfer unit 3 ~1st conveying device 31 to 2nd conveying device 40, 4b 42 to photoresist coating device (COT) 43 44~ bottom coating device (BARC) 50-54 to development processing device (DEV) 60, 61 to chemical room (CHM) 26 201207892 70 to temperature control device (TCP) 71 to transfer device (TRS) 72-74 ~ High-precision temperature control device (CPL) 75 - 78 ~ heat treatment device (BAKE) 8 0 ~ high-precision temperature control device (CPL) 81-84 ~ pre-baking device (PAB) 85 - 89 ~ post-baking device (POST 90 — 93~ High-precision temperature control device (CPL) 94 — 99~ After-bake baking device (PEB) 100, 101~ Attachment device (AD) 102~ Edge exposure device (WEE) 110~ Transport path 111~ Crystal Round transport body 112 to buffer wafer cassette 120 to wafer transfer device 121 to buffer wafer cassette 123 to transport path 130-133 to post-exposure baking device (PEB) 140 to line width measuring device 141 to Mounting table 142 to optical surface shape measuring instrument 143 to light irradiation unit 144 to light detecting unit 145 to calculation unit, 150 to frame 151 to heating unit 152 to cooling unit 160 to cover 160a to exhaust unit 161 to hot plate storage Department 27 201207892 170 to hot plate 171 to heater 172 to heater control device 180 to first lift pin 181 to lift drive mechanism 182 to Hole 190 to holding member 191 to support ring 191a to discharge port 192 to case 200 to cooling plate 200a to cooling member 201 to road 202 to drive unit 203 to slit 204 to second lift pin 205 to lift drive unit 210 Feeding and discharging port 220 to main body control unit 230 to wafer 231 to antireflection film 232 to photoresist film (photoresist layer) 232a, 232c to insoluble portion 232b to soluble portion 232d to lattice insoluble portion A to exposure device C to wafer cassette CD, CD1 - CD3 ~ line width of the resist pattern EXP-H ~ second exposure step EXP-V ~ first exposure step 28 201207892 G1 - G6 ~ processing device group LI, L1 ' ~ 1 Line width L2 of the pattern L2' to line width P1 of the second pattern to the first pattern P2 to the second pattern PEB to heat treatment (baking after exposure) PED, PED1 - PED3 - continuous placement time R1, R2 The refracting mask RC doubling mask replacement step S to the processing chamber 511, S21 to the first data preparing step 512, S22 to the second data preparing step 513, S23 to the first exposure step 514, S24 to the doubling mask Replacement step 515, S25 to second exposure step 516, S26 to heat treatment step 517, S27 to development processing Step SP1 SP1', SP2, SP2'~ interval width SSI, SS2~slope (sensitivity) T, ΤΙ-T3~set temperature T0~a certain temperature, TV~1st exposure step time TR~ doubling mask replacement Time of step TH~ Time of second exposure step W, W1—W3~ Wafer Υ, Υ, Ζ, Θ~ direction 29 201207892 Man Meng patent specification (this = child book format, order, please do not change, ※ Marking Department ※Application No.: 扪叫勹卯不*有写)

\^\〇 I u I U / ;20C6.0U 4 ※Shen Qing Day: Bamboo.11.7&lt;New. Classification I. Name of the invention: (Chinese / English) Substrate processing method /y/\-i SUBSTRATE processing method II. Abstract of Chinese invention: It is formed by a pair of photoresist

The invention aims to provide a sub-exposure of a substrate processing method, which can increase the processing time, and can reduce the photoresist pattern between the recording plates. According to the invention, the substrate for forming the photoresist film can be processed. The substrate processing method includes exposure steps S13 and S15 to expose the substrate a plurality of times, and heat treatment step S16 ′ after the exposure steps Si3 and S15 and before the substrate development processing, the substrate is subjected to heat treatment. In the heat treatment step S16, the heating temperature in the heat treatment is corrected based on the elapsed time from the end of the first exposure to the start of the heat treatment. Third, the English invention summary:

The substrate processing method includes the exposing steps SI3, S15 which expose the substrate two or more times and the heat-treating step S16 which heats the substrate after the exposing steps and before developing the substrate. The heating-treatment temperature of the heat-treating Step S16 is corrected based on the elapsed time until starting the heat-treatment after the first exposure is finished. 201207892 VII. Patent application scope ·········································· = ίί to make a prediction ' and according to the prediction of the substrate processing method according to the patent item 2, the material is calibrated to show the elapsed time and the line width of the photoresist is _ system to predict the =SSi in the middle of the 'in accordance with the first information and the elapsed time, 4, if the application of the paste of the third form of training, including the first Feng J material accurate display of the line width of the light and the heating temperature _ In the step of repairing, according to the second data and the predicted value of the line width, 5, as in the substrate processing method of claim 4, wherein -L (four) Prepare for the first board of the board by the base board ==ΓΓ, after the step, the substrate is changed by the process of the substrate, and the heat treatment is performed by the twisting process. a photoresist pattern by which the pair is formed 30

Claims (1)

201207892 The first data preparation unit performs the exposure step on each of the substrates of the second substrate group composed of the plurality of substrates, and then heats the substrate by changing the heating temperature one by one, and borrows The second material is obtained by developing each of the heat-treated substrates to form a photoresist pattern by measuring the line width of the formed photoresist pattern. Winter W 6. The substrate processing method of the fifth item of Wei Wei, in which the substrate of the third substrate group of the heat treatment step 进行 进行 进行 进行 进行 进行 该 佑 佑 佑 佑 佑 佑 佑 佑 佑 佑 佑The line width of the photoresist pattern formed by the plate development process (the measured value of the line width of '贞1疋) is used to correct the heating temperature. 8. Pattern: 201207892 ® page 1