526587 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 發明領域： 一種淺溝渠隔離（Shallow Trench Isolation; STI)結構 的製造方法，特別是有關於不需使用氧化介電層反調光罩 (Oxide Dielectric-Layer Reverse-Tone Photo Mask ； ODR Photo Mask)，就可改善化學機械研磨（Chemical Mechanical Polishing ; CMP)之平坦化的結果，但其應用不僅限用於本 領域。 發明背景： 淺溝渠隔離結構由於具備小尺寸隔離線寬’主動區域 與隔離結構劃分明顯，隔離結構深度均勻，以及平坦架構 極佳等優點’因此淺溝渠隔離技術不僅已被廣泛的運用在 深次微米（Deep Sub-Micron)技術的積體電路製造上，更是 更小尺寸積體電路製造的已知唯一隔離技術。而化學機械 研磨係為目前唯一能提供超大型積體電路（Very Large Scale Integration ; VLSI)、甚至極大型積體電路（Ultra Large Scale Integration; ULSI)製程全面平坦化（Planarization)的 技術。傳統的作法係於蝕刻出淺溝渠隔離開口後，先以化 學氣相沈積法沉積氧化層來回填淺溝渠隔離開口，再加上 兩道平坦化光阻及一道回蝕刻步驟，最後再施以化學機械 研磨。隨著化學機械研磨平坦化技術的不斷進步，人們試 著省略製程中平坦化光阻與回蝕的步驟，而演變為現今所 通用的淺溝渠隔離技術。 在進行化學機械研磨時，晶圓表面之主動區域的圖案 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ....... ·卜-----裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 526587 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 密度（Pattern Density)會影響化學機械研磨平坦化的效果。 例如’圖案岔度南的部分’凸起部分的間距（S p a c i n g)較短’ 且研除處理後雖具備較佳的平坦面，但花費之研磨時間 (Polishing Time)較長；反之圖案密度低的部分，凸起部分 的間距很長，且研除處理後所提供的平坦面也極為有限， 但花費之研磨時間較短。因此在化學機械研磨前，可先將 已定義之光罩圖案，例如氧化介電層反調光罩圖案，轉移 到光阻層上’其中氧化介電層反調光罩圖案所暴露出之圖 案開口（Pattern opening)略小於主動區域之尺寸，〆方面在 後續處理步驟中可用以保護淺溝渠隔離開口之邊緣（Edge) 的完整’另一方面能改善因主動區域的圖案密度造成研磨 不均的缺點。 請參考第1圖至第5圖，為習知技術進行淺溝渠隔離 結構的製程剖面圖。首先提供基材1 〇，其材質為矽。此基 材10上依序堆豐有厚度約數百埃（Angstrom ;人）之墊氧化 層（Pad Oxide Layer) 11與厚度約數千埃之介電層12，其中 塾氧化層1 1之材料係為二氧化矽（Silicon Dioxide; Si02)， 而介電層12之材料係為氮化石夕（Silicon Nitride ; SiNx)，由 於氮化矽對於矽基材的附著力不強，因此在沉積氮化矽前 會先在基材1 〇上形成一層二氧化矽來幫助氮化矽沉積。接 著’以微影（Photolithography)與乾式蝕刻（Dry Etching)法， 選擇性蝕刻部份之介電層1 2與部份之墊氧化層1 1，並控 制適當蝕刻終點蝕刻基材1 〇，藉以形成複數個主動區域 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .....Γ ......裝.........訂：.......線 (請先閲讀背面之注意事項再填寫本頁) 526587 A7526587 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Field of invention: A manufacturing method of Shallow Trench Isolation (STI) structure, in particular, it does not require the use of an oxide dielectric layer. Oxide Dielectric-Layer Reverse-Tone Photo Mask (ODR Photo Mask) can improve the planarization result of Chemical Mechanical Polishing (CMP), but its application is not limited to this field. Background of the invention: Shallow trench isolation structures have the advantages of a small size isolation line width, 'the active area is clearly separated from the isolation structure, the depth of the isolation structure is uniform, and the flat structure is excellent,' so shallow trench isolation technology has not only been widely used in deep secondary Micron (Deep Sub-Micron) integrated circuit manufacturing is the only known isolation technology for smaller size integrated circuit manufacturing. The chemical mechanical polishing system is currently the only technology that can provide a comprehensive planarization of the process of Very Large Scale Integration (VLSI) and even Ultra Large Scale Integration (ULSI). The traditional method is to etch out the shallow trench isolation openings by chemical oxide deposition and then fill the shallow trench isolation openings back and forth, plus two planarization photoresists and an etch-back step, and finally apply chemical Mechanical grinding. With the continuous progress of chemical mechanical polishing and planarization technology, people have tried to omit the steps of planarizing photoresist and etchback in the process, and evolved into the shallow trench isolation technology commonly used today. When performing chemical mechanical polishing, the pattern of the active area on the wafer surface is based on the Chinese National Standard (CNS) A4 specification (210X297 mm) .... ...... Order ...... line (please read the precautions on the back before filling this page) 526587 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () Density (Pattern Density) will affect the effect of chemical mechanical polishing and flattening. For example, 'the portion of the pattern's south degree' has a shorter spacing, and although it has a better flat surface after the removal process, it takes a longer polishing time; otherwise, the pattern density is low The distance between the raised parts and the raised parts is very long, and the flat surface provided after grinding is very limited, but the grinding time is relatively short. Therefore, before chemical mechanical polishing, a defined mask pattern, such as an oxide dielectric layer inversion mask pattern, can be transferred to the photoresist layer. The pattern exposed by the oxide dielectric layer inversion mask pattern The pattern opening is slightly smaller than the size of the active area. It can be used to protect the integrity of the edge of the shallow trench isolation opening in subsequent processing steps. On the other hand, it can improve the uneven grinding caused by the pattern density of the active area. Disadvantages. Please refer to Fig. 1 to Fig. 5 for cross-sectional views of the process of constructing a shallow trench isolation structure using conventional techniques. First, a substrate 10 is provided, which is made of silicon. A pad oxide layer 11 with a thickness of about several hundred angstroms (Angstrom) and a dielectric layer 12 with a thickness of about several thousands angstroms are sequentially stacked on the substrate 10, of which the material of the hafnium oxide layer 1 1 is It is Silicon Dioxide (Si02), and the material of the dielectric layer 12 is Silicon Nitride (SiNx). Because silicon nitride does not have strong adhesion to the silicon substrate, it is being deposited. Before silicon, a layer of silicon dioxide is formed on the substrate 10 to help the deposition of silicon nitride. Then 'selectively etch a part of the dielectric layer 12 and a part of the pad oxide layer 1 1 by Photolithography and Dry Etching, and control the appropriate etching end point to etch the substrate 1 〇, thereby Form a plurality of active areas This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) ..... Γ ... loading ......... order: ...... ... line (please read the precautions on the back before filling this page) 526587 A7
經濟部智慈財產局員工消費合作社印製 14a、主動區域Mb、主動區域l4c以及複數個淺溝渠隔離 開口 1 3，並暴露出部分之基材丨〇。然後利用化學氣相沉積 法（Chemical Vapor Deposition ; CVD)於基材 1〇 之表面」 積厚度約數千埃之氧化層15,其中氧化層15係、填滿淺溝 渠隔離開口 13中，並覆蓋於主動區域14a、主動區域14b、 以及主動區域1 4c上’而形成如第}圖所示之結構。 之後，於氧化層15之表面形成光阻層I?，如第2圖 所示之結構。接著利用掃瞄裝置（Scanner)將氧化介電層反 ό周光罩圖案轉移到光阻層17上，以暴露出在主動區域i4a 上之氧化層1 5，如第3圖所示之結構。然後以具有氧化介 電層反調光罩圖案之光阻層17為罩幕（Mask)，再利用非等 向性姓刻（Anisotropic Etching)程序，蝕刻部分之氧化層1 5 並暴露出部分之主動區域14a，藉以形成化學機械研磨窗 (C Μ P W i n d 〇 w) 1 9，如第4圖所示之結構。隨後，以渔式或 乾式去光阻的方式’除去光阻層17，而形成第5圖所示之 結構。 如上述習知之製造剖面，在去除光阻層1 7後，利用氧 化介電層反調光罩圖案所暴露出部分之主動區域14a，可於 後續製程中，用來製作例如金屬内連線等。之後，再利用 化學機械研磨法進行平坦化的處理。由於微影製程之關鍵 尺寸（Critical Dimension; CD)約為 〇.8 微米（#m)，當製程 的線寬隨著元件積集度的上昇而逐漸縮短之後，一般的微 影製程由於光學上的限制，已無法提供所需之更小的線 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .....Γ:,......裝.........訂.........線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 526587 五、發明説明（ 寬使小於氧化介電層反調光罩所不能暴露出之尺寸的主 動區域，無法加以利用，亦耗費製作氧化介電層反調光罩 成本同日守在化學機械研磨時，基材表面上大塊面的氧 化層，影響化學機械研磨進行平坦化的處理，且造成氧化 層谷易殘留在晶圓上，不止研磨終點難以控制，相對也提 南再次進行化學機械研磨的機會，結果使得製造成本择 加。 曰 發明目的及概述： ▲馨於上述之發明背景中，不僅耗費製作氧化介電層反 週先罩之成本，同時在化學機械研磨3夺，大塊面的氧化層 影響化學機械研磨進行平坦化的處理’不僅氧化層容易： :在晶圓± ’研磨終點不易控制，相對也提高再次進行化 學機械研磨的機會，結果使得製造成本增加。 U本發明白勺i I目的之一為提供一種％冑渠隔離結構的 製造方法，其係在淺溝渠隔離開口沉積氧化層後，依序形 成薄的硬罩幕層與光阻層於氧化層之表面， 刊用乳化層表 面形成的複數個尖角與硬罩幕層，在不需使用氧化介電層 反調光罩的情況下’可改善平坦化的效果，其中所暴露出 之主動區域的尺寸，更小於氧化介電層反調光罩所不能暴 露出之尺寸。因此本發明取代習知技術需利用氧化介電層 反調光罩圖案之光阻層作為罩幕的缺點。 本發明之另一目的為提供一種淺溝渠隔離結構的製造 方法’其係在不需使用氧化介電層反調光罩的情況了，即 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) ----L …·......^.........、玎.........^ (請先閲讀背面之注意事項再填寫本頁) 526587 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填、寫本頁) 可暴露出較小的主動區域，以利後續製程中使用，其中所 暴露出之主動區域的尺寸，不僅小於氧化介電層反調光罩 所不能暴露出之尺寸，更能減少製作氧化介電層反調光罩 之成本。 本發明之又一目的為提供一種淺溝渠隔離結構的製造 方法，其係增加化學機械研磨窗數量，以減少大塊面的氧 化層，來提供較佳之化學機械研磨平坦化，並減少製造成 本。因此本發明改善習知技術中，大塊面的氧化層影響化 學機械研磨進行平坦化的缺點。 經濟部智莛財產局員工消費合作社印製 根據以上所述之目的，本發明更提供了 一種淺溝渠隔 離結構的製造方法，至少包括：首先提供基材，其中基材 上依序堆疊有墊氧化層與介電層；接著，以微影與乾式蝕 刻法，選擇性蝕刻部份之介電層與部份之墊氧化層，並控 制適當蝕刻終點蝕刻基材，藉以形成複數個主動區域以及 複數個淺溝渠隔離開口，並暴露出部分之基材；然後利用 化學氣相沉積法，沉積氧化層於主動區域上並填滿淺溝渠 隔離開口中，且氧化層之表面形成複數個尖角；隨後，於 氧化層之表面依序形成薄的硬罩幕層及光阻層；調整適當 的蝕刻時間，以等向性蝕刻程序，蝕刻光阻層至預定深度， 藉以暴露出位置對應於尖角處之硬罩幕層；之後，以光阻 層為罩幕，利用乾式蝕刻法，蝕刻暴露出相對於尖角處之 硬罩幕層，以暴露出尖角；接著，再利用非等向性蝕刻程 序，並選擇高的蝕刻選擇比，從尖角處蝕刻部分之氧化層， 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 526587 A7 B7 五、發明説明（） 藉以暴露出主動區域之表面，而形成複數個化學機械研磨 窗；然後以溼式或乾式去光阻的方式，去除光阻層未被移 除之部份；以及利用濕式或乾式蝕刻法，去除硬罩幕層。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1圖至第5圖係繪示習知技術進行淺溝渠隔離結構 的製程剖面圖；以及 第6圖至第1 0圖係繪示依據本發明之一較佳實施例進 行淺溝渠隔離結構的製程剖面圖。 .圖號對照說明： (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 10 基材 11 墊 氧 化 層 12 介電 層 13 淺 溝 渠 隔離 開口 14a 、14b 、1 4 c 主動 區 域 15 氧 化 層 17 光阻 層 19 化 學 機 械研 磨窗 20 基材 21 墊 氧 化 層 22 介電 層 23 淺 溝 渠 隔離 開口 24a 、24b 、24c 主動 區 域 25 氧 化 層 26 尖角 27 硬 罩 幕 層 28 光阻 層 28a 、28b 、28c 光阻 29 化學 機械研磨窗 發明 丨詳細 說明： 本發明揭露一種淺溝渠隔離結構的製造方法，其係利 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 經濟部智慧財產局員工消費合作社印製 526587 A7 B7 五、發明説明（ 用氧化層表面形成的複數個尖角盥 ^ 文皁幕層，在不需使用 氧化介電層反調光罩的情況下，可 j改善平坦化的效果，其 中所暴露出之主動區域的尺寸’更小於氧化介電 罩所不能暴露出之尺寸。為了使本發 S ^之敘述更加詳盡與 完備，可參照下列描述並配合第6圖至筮】n闻 ^ ^ , 口主第1 〇圖，係繪示依 據本舍明之一較佳實施例進行淺溝 再木隔離結構的製程剖面 圖。 請參照第6圖’首先提供基材20，其材質為矽。此基 材20上依序堆疊有厚度約數百埃之塾氧化層21與厚度二 數千埃之介電4 22,其中墊氧化層21之材料係為二氧化 而介電層22之材料係為氮切（SiNx)，由於氮 化矽對於矽基材的附著力不強，因 Μ %仕/儿積虱化矽前會先 在基材20上形成一層二氧化矽來幫助氮化矽沉積。接著， 以微影與乾式蝕刻法，選擇性蝕刻部份之介電層22與部份 之墊氧化層2 1，並控制適當蝕刻終點蝕刻基材2〇，藉以形 成複數個主動區域24a、主動區域24b、主動區域24c以及 複數個深度約數千埃之淺溝渠隔離開口 2 3，並暴露出部分 之基材20。然後利用化學氣相沉積法（CVD)、高密度電漿 化學氣相沉積（High Density Plasma CVD ; HDPCVD)法、低 壓化學氣相沉積（Low Pressure CVD ; LPCVD)法、或電漿加 強型化學氣相沉積（Plasma-Enhanced CVD ; PECVD)法，於 基材20之表面沉積厚度約數千埃之氧化層25，其中氧化 層2 5係填滿淺溝渠隔離開口 2 3中，且覆蓋於主動區域 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .....Γ · ··......裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 526587 經濟部智迮財產局員工消費合作社印製 A7 B7 五、發明説明（） 24a、主動區域24b、以及主動區域24c上，同時於氧化層 2 5之表面形成複數個尖角2 6，而形成如第6圖所示之結 構。 隨後，利用化學氣相沉積法、低壓化學氣相沉積法、 或電漿加強型化學氣相沉積法，於氧化層2 5之表面沉積薄 的硬罩幕層27，其中硬罩幕層27之材料為氮化矽（SiNx或 Si3N4)，厚度約100埃至約200埃。之後，在硬罩幕層27 上形成光阻層2 8，形成如第7圖所示之結構。接著，調整 適當的钱刻時間’並利用等向性姓刻程序，钱刻光阻層2 8 至預定深度，使光阻層2 8轉變為光阻層2 8 a，藉以暴露出 位置對應於尖角26處之硬罩幕層27，而形成如第8圖所 示之結構。其中根據本發明所指之預定深度，為蝕刻光阻 層28至暴露出位置對應於尖角26處之硬罩幕層27，係藉 由計算蝕刻速率及光阻層之厚度所得出的蝕刻時間，來進 行此預定深度之蝕刻。 之後，以光阻層2 8 a為罩幕，先利用乾式蝕刻法，蝕 刻暴露出之硬罩幕層27，以暴露出尖角26。接著，再利用 非等向性蝕刻程序，並選擇高的蝕刻選擇比，其中蝕刻尖 角2 6處的氧化層2 5對於其他材質例如光阻層2 8 a之蝕刻 選擇比係大於約40 : 1，較佳之蝕刻選擇比約為48 : 1，從 暴露出之尖角26處蝕刻部分之氧化層25，藉以暴露出主 動區域24a、主動區域24b、以及主動區域24c之表面，而 形成複數個化學機械研磨窗29，如第9圖所示之結構。然 10 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) :......裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 526587 經濟部智莛財產局員工消費合作社印製 A7 B7 五、發明説明（） 後，以溼式或乾式去光阻的方式，除去光阻層2 8 a，並利用 濕式或乾式钱刻法，去除硬罩幕層2 7，而形成如第10圖 所示之結構。 根據本發明所提供之淺溝渠隔離結構的製造方法，係 利用氧化層表面形成的複數個尖角與薄的硬罩幕層，先將 光阻層，2 8蝕刻至預定深度，使光阻層 2 8轉變為光阻層 2 8 a，就能在不需使用掃瞄裝置與氧化介電層反調光罩的情 況下，利用光阻層 28a為罩幕，以類似自行對準（Self-Aligned)的方式進行蝕刻，藉此暴露出較多的主動區域 24a、主動區域24b、以及主動區域24c。一般而言，氧化 介電層反調光罩由於光學上的限制，因此所能提供之關鍵 尺寸係約為 0,8 // m，而根據本發明所暴露出之主動區域 24a、主動區域24b、以及主動區域24c的關鍵尺寸則約至 0.5μηι，不僅小於氧化介電層反調光罩所不能暴露出之尺 寸，增加可使用之主動區域24a、主動區域24b、以及主動 區域24c的數量，更能大幅降低製作氧化介電層反調光罩 之成本。請參考第5圖與第1 0圖，為習知技術與本發明形 成化學機械研磨窗之比較，可以明顯發現在第1 0圖中利用 本發明可增加使用的化學機械研磨窗之數量，原本在第 5 圖中小於氧化介電層反調光罩所不能暴露出的主動區域 14b及主動區域14c，在本發明之第10圖中亦可形成化學 機械研磨窗2 9。 根據本發明淺溝渠隔離結構的製造方法，其中上述從 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) ......裝.........訂.........線 (請先閲讀背面之注意事項再填寫本頁) 526587 A 7 _B7_ 五、發明説明（） 尖角2 6處依序蝕刻部分之硬罩幕層2 7以及部分之氧化層 2 5，所選擇之蝕刻選擇比與硬罩幕層2 7之材料與厚度僅為 一較佳實施例，且本發明不限於此，一般熟悉此技術之人 員所瞭解能用於蝕刻氧化層之高蝕刻選擇比與適當的硬罩 幕層之厚度，均包括在本發明範圍中。 因此，本發明之一優點就是提供一種淺溝渠隔離結構 的製造方法，其係在淺溝渠隔離開口沉積氧化層後，依序 形成薄的硬罩幕層與光阻層於氧化層之表面，利用氧化層 表面形成的複數個尖角與硬罩幕層，在不需使用氧化介電 層反調光罩的情況下，可改善平坦化的效果，其中所暴露 出之主動區域的尺寸，更小於氧化介電層反調光罩所不能 暴露出之尺寸。因此本發明取代習知技術需利用氧化介電 層反調光罩圖案之光阻層作為罩幕的缺點。 本發明之另一優點為提供一種淺溝渠隔離結構的製造 方法，其係在不需使用氧化介電層反調光罩的情況下，即 可暴露出較小的主動區域，以利後續製程中使用，其中所 暴露出之主動區域的尺寸，不僅小於氧化介電層反調光罩 所不能暴露出之尺寸，更能減少製作氧化介電層反調光罩 之成本。 .....Γ ......裝.........訂..............線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 造氧成化 製的造響 的面製影 構塊少層 結大減化 離少並氧 隔減，的 渠以化面 溝，坦塊 淺量平大 種數磨， 一 窗研中 供磨械術 提研機技 為械學知 點機化習 優學 之善 一 化佳改 又加較明 之增供發 明係提本 發其來此 本，，因 法 層 。 方化本 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 526587 A7 B7 五、發明説明（） 學機械研磨進行平坦化的缺點。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包括在下述之申請專利範圍内。 .....Γ 」......裝.........訂.........線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慈財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 14a, the active area Mb, the active area 14c, and a plurality of shallow trenches to isolate the openings 13 and expose some of the substrate. Then, a chemical vapor deposition method (Chemical Vapor Deposition; CVD) is used on the surface of the substrate 10 to form an oxide layer 15 with a thickness of about several thousand angstroms. The oxide layer 15 is a series of oxides that fills the shallow trench isolation opening 13 and covers it. On the active area 14a, the active area 14b, and the active area 14c, a structure as shown in FIG. 2 is formed. Then, a photoresist layer I? Is formed on the surface of the oxide layer 15, as shown in FIG. Then, a scanning device (Scanner) is used to transfer the reversed mask pattern of the oxide dielectric layer to the photoresist layer 17 to expose the oxide layer 15 on the active area i4a, as shown in the structure shown in FIG. 3. Then, a photoresist layer 17 with an inverse dimming mask pattern of the oxide dielectric layer is used as a mask, and then an anisotropic etching process is used to etch part of the oxide layer 15 and expose part of the oxide layer. The active region 14a forms a chemical mechanical polishing window (CM PW ind 0w) 19 as shown in FIG. 4. Subsequently, the photoresist layer 17 is removed by fishing or dry photoresist removal, to form the structure shown in FIG. According to the conventional manufacturing profile, after the photoresist layer 17 is removed, the active area 14a of the exposed portion of the photomask pattern is reversed with the oxide dielectric layer, which can be used in subsequent processes to make, for example, metal interconnects, etc. . Thereafter, a planarization process is performed by a chemical mechanical polishing method. Since the critical dimension (CD) of the lithography process is about 0.8 micrometers (#m), when the line width of the process is gradually shortened with the increase of the component concentration, the general lithography process is optically Restrictions, can no longer provide the required smaller paper size of paper suitable for China National Standard (CNS) A4 specifications (210X297 mm) ..... Γ:, ...... packing ..... .... Order ... (Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives 526587 V. Description of the invention The active area of the size that can not be exposed by the layer inverting mask can not be used, and the cost of manufacturing an oxide dielectric layer inverting mask is the same as that of chemical oxide polishing on the surface of the substrate. Affects chemical mechanical polishing for planarization, and causes oxide layer valleys to easily remain on the wafer. Not only is the polishing endpoint difficult to control, but also the opportunity to perform chemical mechanical polishing again, which results in an increase in manufacturing costs. And summary: ▲ Xin is behind the invention In the scene, not only is the cost of making the oxide dielectric layer reversed, but also in chemical mechanical polishing, the large surface oxide layer affects the chemical mechanical polishing for planarization. Not only is the oxide layer easy:: on the wafer ± 'It is not easy to control the end point of grinding, and it also relatively increases the chance of re-chemical mechanical grinding, which results in an increase in manufacturing costs. One of the purposes of the present invention is to provide a method for manufacturing a% trench isolation structure, which is shallow After the oxide layer is deposited in the trench isolation opening, a thin hard mask layer and a photoresist layer are sequentially formed on the surface of the oxide layer. A plurality of sharp corners formed on the surface of the emulsion layer and the hard mask layer are formed. In the case of an electric layer inversion dimmer, the effect of planarization can be improved, in which the size of the active area exposed is smaller than that which cannot be exposed by an oxide dielectric inversion dimmer. Therefore, the present invention replaces the conventional The technology needs to use the shortcomings of the photoresist layer of the inversion mask pattern of the oxide dielectric layer as the mask. Another object of the present invention is to provide a method for manufacturing a shallow trench isolation structure. In the case of no need to use an oxide dielectric layer inversion mask, that is, this paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) ---- L ............ ........, 玎 ............ ^ (Please read the notes on the back before filling out this page) 526587 A7 B7 V. Description of the invention () (Please read the notes on the back first Refill and write this page) can expose smaller active areas to facilitate subsequent processes. The size of the exposed active area is not only smaller than the size that cannot be exposed by the oxide dielectric mask. It can further reduce the cost of fabricating an oxide dielectric layer inverse dimmer. Another object of the present invention is to provide a method for manufacturing a shallow trench isolation structure, which is to increase the number of chemical mechanical polishing windows to reduce the oxide layer on a large surface. To provide better chemical mechanical polishing and planarization, and reduce manufacturing costs. Therefore, in the conventional technology of the present invention, the disadvantage of the large-layer oxide layer affecting the planarization of the chemical mechanical polishing is affected. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above-mentioned purpose, the present invention further provides a method for manufacturing a shallow trench isolation structure, which at least includes: firstly providing a substrate, wherein the substrate is sequentially stacked with pad oxidation Layer and dielectric layer; then, lithography and dry etching are used to selectively etch a portion of the dielectric layer and a portion of the pad oxide layer, and control the appropriate etching end point to etch the substrate to form a plurality of active regions and a plurality of A shallow trench isolates the opening and exposes a portion of the substrate; then a chemical vapor deposition method is used to deposit an oxide layer on the active area and fill the shallow trench isolate opening, and the surface of the oxide layer forms a plurality of sharp corners; A thin hard mask layer and a photoresist layer are sequentially formed on the surface of the oxide layer; an appropriate etching time is adjusted, and the photoresist layer is etched to a predetermined depth by an isotropic etching process, so that the exposed position corresponds to a sharp corner After that, the photoresist layer is used as the mask and the dry mask method is etched to expose the hard mask layer relative to the sharp corners to expose the sharp corners. By using an anisotropic etching process and selecting a high etching selection ratio, the oxide layer is etched from the sharp corners. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 526587 A7 B7 5 2. Description of the invention () Forming a plurality of chemical-mechanical polishing windows by exposing the surface of the active area; and then removing the unremoved portion of the photoresist layer in a wet or dry manner; and using a wet type Or dry etching to remove the hard cover curtain layer. Brief description of the drawings: The preferred embodiment of the present invention will be explained in more detail in the following explanatory texts with the following figures, where: Figures 1 to 5 illustrate conventional trench isolation structures FIG. 6 to FIG. 10 are cross-sectional views of the manufacturing process of a shallow trench isolation structure according to a preferred embodiment of the present invention. .Comparison of drawing numbers: (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 Substrate 11 Pad oxide layer 12 Dielectric layer 13 Shallow trench isolation openings 14a, 14b, 1 4 c active area 15 oxide layer 17 photoresist layer 19 chemical mechanical polishing window 20 substrate 21 pad oxide layer 22 dielectric layer 23 shallow trench isolation opening 24a, 24b, 24c active area 25 oxide layer 26 sharp corners 27 hard cover curtain layer 28 Photoresist layer 28a, 28b, 28c Photoresist 29 Chemical mechanical polishing window invention 丨 Detailed description: The present invention discloses a method for manufacturing a shallow trench isolation structure, which is based on Chinese paper standard (CNS) A4 (210X297) (Mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 526587 A7 B7 V. Description of the invention (with a plurality of sharp-angled toilets formed on the surface of the oxide layer ^ text soap curtain layer, no need to use an oxide dielectric layer anti-dimmer mask In the case, the effect of planarization can be improved, in which the ruler of the active area exposed 'It is smaller than the size that cannot be exposed by the oxidized dielectric cover. In order to make the description of the present invention more detailed and complete, you can refer to the following description and cooperate with Figures 6 to 筮] n ^^^, Figure 1 〇 , Which is a cross-sectional view showing the process of performing a shallow trench and wooden isolation structure according to one of the preferred embodiments of the present invention. Please refer to FIG. 6 ′ firstly provide a substrate 20 made of silicon. This substrate 20 is sequentially stacked There are a plutonium oxide layer 21 with a thickness of about several hundred angstroms and a dielectric 4 22 with a thickness of two thousand angstroms. The material of the pad oxide layer 21 is dioxide and the material of the dielectric layer 22 is nitrogen cut (SiNx). Silicon nitride does not have strong adhesion to silicon substrates. Because M% silicon deposits will form a layer of silicon dioxide on the substrate 20 to help silicon nitride deposition. Then, lithography and dry type are used. The etching method selectively etches a portion of the dielectric layer 22 and a portion of the pad oxide layer 21, and controls the appropriate etching end point to etch the substrate 20 to form a plurality of active regions 24a, 24b, 24c, and 24c. Shallow trench isolation openings 2 3 of a depth of about several thousand Angstroms are exposed and exposed Sub-substrate 20. Then use chemical vapor deposition (CVD), high density plasma chemical vapor deposition (High Density Plasma CVD; HDPCVD), low pressure chemical vapor deposition (Low Pressure CVD; LPCVD), or Plasma-Enhanced CVD (PECVD) method deposits an oxide layer 25 with a thickness of about several thousands angstroms on the surface of the substrate 20, wherein the oxide layer 2 5 fills the shallow trench isolation opening 2 3 , And cover the active area. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ..... Γ · · · ... equipment ... ........ line (please read the notes on the back before filling this page) 526587 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description () 24a, Active Area 24b, and Active On the region 24c, a plurality of sharp corners 26 are formed on the surface of the oxide layer 25 at the same time, and a structure as shown in FIG. 6 is formed. Subsequently, a thin hard mask layer 27 is deposited on the surface of the oxide layer 25 by using a chemical vapor deposition method, a low pressure chemical vapor deposition method, or a plasma enhanced chemical vapor deposition method. The material is silicon nitride (SiNx or Si3N4) with a thickness of about 100 Angstroms to about 200 Angstroms. Thereafter, a photoresist layer 28 is formed on the hard mask layer 27 to form a structure as shown in FIG. 7. Next, adjust the appropriate time for money engraving and use the isotropic family name engraving process to engrav the photoresist layer 2 8 to a predetermined depth, so that the photoresist layer 28 is transformed into the photoresist layer 2 8 a, so that the exposed position corresponds to The hard cover curtain layer 27 at the sharp corner 26 forms the structure as shown in FIG. 8. Wherein, according to the predetermined depth referred to in the present invention, the photoresist layer 28 is etched to the hard mask layer 27 at the exposed position corresponding to the sharp corner 26, and the etching time is obtained by calculating the etching rate and the thickness of the photoresist layer. To perform the etching at this predetermined depth. After that, using the photoresist layer 28a as a mask, the exposed hard mask layer 27 is first etched by dry etching to expose the sharp corners 26. Next, the anisotropic etching process is used again, and a high etching selection ratio is selected, in which the etching selection ratio of the oxide layer 2 5 at the etched corner 26 to the other materials such as the photoresist layer 2 8 a is greater than about 40: 1. The preferred etching selection ratio is about 48: 1. The exposed oxide layer 25 is etched from the exposed sharp corners 26 to expose the surfaces of the active area 24a, the active area 24b, and the active area 24c to form a plurality of The chemical mechanical polishing window 29 has a structure as shown in FIG. However, 10 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm): ...... install ......... order ......... line (please (Please read the notes on the back before filling this page) 526587 Printed A7 B7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. After the description of the invention (), the photoresist layer is removed by wet or dry photoresist removal 2 8 a, and the wet or dry money engraving method is used to remove the hard cover curtain layer 27 to form the structure shown in FIG. 10. According to the manufacturing method of the shallow trench isolation structure provided by the present invention, a plurality of sharp corners and a thin hard cover curtain layer formed on the surface of the oxide layer are used to first etch the photoresist layer to a predetermined depth to make the photoresist layer. 2 8 is converted into a photoresist layer 2 8 a, and the photoresist layer 28a can be used as a mask without using a scanning device and an inverting mask of an oxide dielectric layer, similar to self-alignment (Self- Aligned), thereby exposing more active regions 24a, 24b, and 24c. Generally speaking, due to optical restrictions, the oxide dielectric inverting mask can provide a key size of about 0,8 // m, and the active area 24a and the active area 24b exposed according to the present invention And the critical size of the active area 24c is about 0.5 μm, which is not only smaller than the size that cannot be exposed by the oxide dielectric inverting mask, and increases the number of active areas 24a, 24b, and 24c that can be used, It can also greatly reduce the cost of fabricating an oxide dielectric layer inversion mask. Please refer to FIG. 5 and FIG. 10. For comparison between the conventional technology and the present invention for forming a chemical mechanical polishing window, it can be clearly found that the use of the present invention in FIG. 10 can increase the number of chemical mechanical polishing windows. In FIG. 5, the active area 14 b and the active area 14 c that are smaller than those that cannot be exposed by the oxide dielectric inverting mask can be formed in the tenth view of the present invention by forming a chemical mechanical polishing window 29. According to the method for manufacturing a shallow trench isolation structure according to the present invention, wherein the above-mentioned paper standards are applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) ... install ... ........ line (please read the precautions on the back before filling this page) 526587 A 7 _B7_ V. Description of the invention () Sharp corners 2 and 6 are sequentially etched part of the hard cover curtain layer 2 7 and part The oxide layer 25, the selected etching selection ratio and the material and thickness of the hard cover curtain layer 27 are only a preferred embodiment, and the present invention is not limited to this. Generally, those skilled in the art can understand that it can be used for etching. Both the high etching selection ratio of the oxide layer and the thickness of the appropriate hard mask layer are included in the scope of the present invention. Therefore, one advantage of the present invention is to provide a method for manufacturing a shallow trench isolation structure. After a shallow trench isolation opening is deposited with an oxide layer, a thin hard mask layer and a photoresist layer are sequentially formed on the surface of the oxide layer. The multiple sharp corners formed on the surface of the oxide layer and the hard cover curtain layer can improve the flattening effect without using an oxide dielectric inverting light mask. The size of the exposed active area is smaller than Dimensions that an oxide dielectric inverting reticle cannot expose. Therefore, the present invention replaces the conventional technique with the disadvantage of using the photoresist layer of the inversion mask pattern of the oxide dielectric layer as the mask. Another advantage of the present invention is to provide a method for manufacturing a shallow trench isolation structure, which can expose a smaller active area without the use of an oxide dielectric inverting dimmer to facilitate subsequent processes. In use, the size of the active area exposed is not only smaller than that which cannot be exposed by the oxidized dielectric layer inversion mask, and the cost of making the oxidized dielectric layer inversion mask can be reduced. ..... Γ ...... install ......... order ......... line (please read the precautions on the back before filling this page) ) The Intellectual Property Bureau employee consumer cooperatives of the Ministry of Economic Affairs print and produce the oscillating surface shadowing structure made of oxygen. The structure is less stratified, greatly reduced, and less isolated, and the oxygen is reduced. Kinds of grinding, a window of research for grinding machine technology, research and development of machine technology for mechanical knowledge, knowledge of machine learning, good learning, good reforms, and more obvious increase in the supply of inventions. Law layer. Squared version This paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm) 526587 A7 B7 5. Description of the invention () The disadvantages of mechanical polishing for flattening. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. ..... Γ "...... install ......... order ...... line (please read the precautions on the back before filling this page) Printed on the paper of the Consumer Goods Cooperative of Cixi Property Bureau, the paper size is applicable to China National Standard (CNS) A4 (210X297 mm)