TW523883B - Temperature sensing integrated circuit device - Google Patents

Temperature sensing integrated circuit device Download PDF

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Publication number
TW523883B
TW523883B TW089110905A TW89110905A TW523883B TW 523883 B TW523883 B TW 523883B TW 089110905 A TW089110905 A TW 089110905A TW 89110905 A TW89110905 A TW 89110905A TW 523883 B TW523883 B TW 523883B
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Taiwan
Prior art keywords
temperature
thermocouple
integrated circuit
die
temperature sensing
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TW089110905A
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Chinese (zh)
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Kamel Fauzi Razali
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Kamel Fauzi Razali
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/028Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples using microstructures, e.g. made of silicon
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A method of making a temperature sensing integrated circuit device and a device as such are disclosed. The method involves etching away the encapsulation 14 of an 1C device 10 to expose a surface of the die 12. A junction 24 of a thermocouple 22 is then attached directly onto the surface of die 12. The cavity 18 formed by the etching step, is then refilled with a casting compound. The temperature sensing device 10 is used for calibrating the chamber temperature of a test handler in which 1C devices are soaked to reach a pre-determined temperature prior to electrical testing. The attachment of a thermocouple junction 22 directly onto a surface of the die 12 allows accurate measurement of the temperature of the die 12.

Description

經濟部智慧財產局員工消費合作社印創衣 523883 A7 """"""' --------B7___ 五、發明說明(1 ) 、本發明係有關於一種參t務ic f韋及其製造方 法。 〜在1C裝置的製造中,一般會使其保持在特定溫度來進 =電測試。該等裝置被測試的溫度係代表所預期的操作環 境。典型設定的測試溫度為25t&100t,但亦可指定其 它的測試溫度,例如供軍事或太空用途的Ics,乃可能設 疋測試溫度為-5 5 °C及15 0 °C。 各種不同的測試裝置已被開發俾以高速進行ic裝置 的最後電測試,而稱為測試處理器的機器已被研發出來 ,其能以所需的速度將個別的1C裝置饋入及送出一測試 态的界面測試位置。該等,試處理器含有腔室,在其内 要被測試的1C裝置會被維持於特定的測試溫度。為確保 一測試處理器的腔室溫度係精準於所設定的測試溫度, 该腔室會被以言午多選#定位於該⑬室中的感溫裝置來反 覆地校準。該等校準系統之一例乃揭示於第5287294號 美國專利案中。 ; 習知用來進行該等典準的感溫裝置係包含一冗裝置, 其上開設一孔而有一熱偶線插入其中。但是,此種構造僅 可能使用於中等或大型IC裝置,例如DIp(雙共線封裝體) 、PLCC(塑膠無導線晶片載具)、QFP(方形扁平封裝體)、 PQFP(塑膠方形扁平封裝體)等封裝體。對小型封裝體而 言,諸如SOIC(小型積體電路)、TS0P(薄式小型積體電路) 、丁SSOP(薄式收縮小型封裝體)、微bGa(球格陣列)等類 之裝置,因為該等裝置太小故一熱偶之接頭不能插入其中 (請先閱Λ背面之注意事項再填寫本頁)Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, India 523883 A7 " " " " " "' -------- B7___ V. Description of the Invention (1) The present invention relates to a kind of t service IC and its manufacturing method. ~ In the manufacture of 1C devices, they are generally maintained at a specific temperature for electrical testing. The temperature at which these devices are tested is representative of the expected operating environment. The typical set test temperature is 25t & 100t, but other test temperatures can also be specified, such as Ics for military or space use, it is possible to set the test temperature to -5 5 ° C and 15 0 ° C. Various test devices have been developed. The final electrical test of the ic device is performed at high speed, and a machine called a test processor has been developed that can feed individual 1C devices into and out of a test at the required speed. Interface test position. As such, the test processor contains a chamber in which the 1C device to be tested is maintained at a specific test temperature. To ensure that the temperature of the chamber of a test processor is accurate to the set test temperature, the chamber will be repeatedly calibrated by a temperature sensing device positioned in the chamber with a multi-selection ##. An example of such a calibration system is disclosed in U.S. Patent No. 5,287,294. The conventional temperature sensing device used to perform such standards includes a redundant device, a hole is opened in it, and a thermocouple wire is inserted into it. However, this configuration is only possible for medium or large IC devices, such as DIp (dual collinear package), PLCC (plastic leadless chip carrier), QFP (square flat package), PQFP (plastic square flat package) ) And other packages. For small packages, devices such as SOIC (small integrated circuit), TS0P (thin small integrated circuit), SSOP (thin shrink small package), micro bGa (ball grid array), etc., because These devices are too small so a thermocouple connector cannot be inserted into it (please read the precautions on the back of Λ before filling this page)

523883 A7 經濟部智慧財產局員工消費合作社印製 份; 五、發明說明( ’故只能使用裸露的熱偶接頭來感測其腔室溫度。 該測試系統的完整性非常重要,因此最後該待測㈣ 、’Hi /皿度之可Λ性必須精準於所設定的測試溫度。但是如 上所述用來校準測試溫度的習知感溫裝置,乃可能會在校 準中發生誤差。即是,對小Ic裝置而言其完全沒有感測到 該晶片封裝體内的溫度,而對大1C裝置而言,雖有一執偶 接頭插人—預絲好㈣巾,㈣接頭㈣於實際之晶片 位置的正確定位時常會不確定,_該開孔乃可能未及於 S玄晶片。另一個問題係該開孔亦可能太超過實際的晶片位 置而損壞它。 本發明乃欲提供-種可用來校準測試處理器的感溫積 心兒路裝置’及製造該裝置的方法,其在被用來感測該裝 中之曰曰片# /皿度時,發生不準禮的機會將被減到最低。 友是,在本發明之第一態樣中,乃提供一種感溫積體 電路裝置,包含·· • -埋設在包封材料中之半導體晶片,及一熱偶含有一 接頭乃破直接固設於該晶片表面,其中該熱偶會穿過包封 材料而連結於一測溫電路. 本^明的第一怨樣係提供一種製造感測積體電路裝置 的方法,包含: 提供-積體電路裝置’其具有一半導體晶片埋設在包 封材料中; 藉除去一些包封材料而來曝現至少該晶片表面的一部 ^-----r---^---------^ (請先閱讀背面之注意事項再填寫本頁) g紙張尺度_ ?1^鮮(CNSjA4規格⑵J x 297公釐) 523883523883 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs; 5. Description of the invention ('Therefore, only exposed thermocouple connectors can be used to sense the temperature of the chamber. The integrity of the test system is very important, so it should be waited for in the end. The testability of ㈣, 'Hi / plate degree must be accurate to the set test temperature. However, the conventional temperature sensing device used to calibrate the test temperature as described above may cause errors in the calibration. That is, correct For the small Ic device, it does not sense the temperature inside the chip package at all, while for the large 1C device, although there is a coupler connector inserted-a pre-wired towel, the connector is at the actual wafer position. It is often uncertain when it is positioned correctly. The opening may not be as close to the Suan wafer. Another problem is that the opening may also exceed the actual wafer position and damage it. The present invention is intended to provide a kind of calibration test The processor's temperature-sensing product and method for manufacturing the device, when used to sense the film # / 不 度 in the device, the chance of indecent assault will be minimized. Friends are In this post In a first aspect, a temperature-sensing integrated circuit device is provided, including a semiconductor wafer embedded in an encapsulating material, and a thermocouple containing a connector is directly fixed on the surface of the wafer, wherein The thermocouple passes through the encapsulating material and is connected to a temperature measurement circuit. The first complaint of the present invention is to provide a method for manufacturing a sensing integrated circuit device, including: providing-an integrated circuit device 'which has a The semiconductor wafer is buried in the encapsulation material; at least a part of the surface of the wafer is exposed by removing some encapsulation material ^ ----- r --- ^ --------- ^ (please first Read the notes on the back and fill out this page) g Paper size_? 1 ^ fresh (CNSjA4 size ⑵J x 297 mm) 523883

發明說明(3 經濟部智慧財產局員工消費合作社印製 在該曝現的晶片表面上直接固設一熱偶的接頭;及 塗設澆鑄化合物來替代被除去的包封材料而再包封該 晶片,並使該熱偶穿過該包封物。 在本發明之第二態樣中,對一塑膠包封材料而言,最 好是藉姓刻除掉該包封材料而來曝現該晶片的至少一部份 表面。對一具有陶瓷包封材料的1C而言,其晶片表面乃可 利用特疋的ό又備及工具來被機械式地曝現。最好該熱偶含 有焊接在一起的不同金屬線來形成一接頭,而該接頭被直 接固设在曝露的晶片頂部表面上。該熱偶的接線係依種類 來選擇,例如一種”J”或”Κ”或”Τ”或其它種類的熱偶。 最好該熱偶接頭係以黏接來直接固設在曝設的晶片表 面上,此可使用導熱黏劑來完成。或者該接頭亦可被炫接 而連接於5玄晶片表面上。 為使St*更瞭解本發明’並不出其如何運作,現將藉非 為限制而僅為舉例之實施例配合所附圖式來說明。 圖式之簡、單說明: 第1圖示出一將要被製成本發明之感溫IC裝置的既有 1C裝置。 第2、3、4圖乃表示利用第1圖的裝置來製成本發明之 一感溫1C裝置實施例的方法之各步驟。 一可被轉變成本發明之感溫裝置的積體電路裝置丨〇係 可為一 SOIC(小型積體電路)封裝體(見第1圖),其含有一 矽晶片(或晶片)12包封在一塑膠絕緣材料14中。該1C裝置 10的端子16係被導線(未示出)連接於設在該晶片12中的電 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---?---J------------r---訂---------^—^^1 f請先閱讀背面之泛咅?事項再填寫本頁} 523883 五、發明說明(4 ) 路,並形成該電路之電接點。Description of the invention (3 The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a thermocouple connector directly fixed on the surface of the exposed wafer; and coats the wafer with a casting compound instead of the removed encapsulation material And pass the thermocouple through the encapsulant. In a second aspect of the invention, for a plastic encapsulation material, it is best to expose the wafer by removing the encapsulation material by the last name. At least part of the surface. For a 1C with a ceramic encapsulation material, the wafer surface can be mechanically exposed using special equipment and tools. Preferably, the thermocouple contains soldered together Different metal wires to form a connector, and the connector is directly fixed on the exposed top surface of the wafer. The wiring of the thermocouple is selected according to the type, such as a "J" or "K" or "T" or other The type of thermocouple. It is best that the thermocouple connector is directly fixed on the exposed wafer surface by bonding. This can be done using thermally conductive adhesive. Or the connector can also be connected to the 5xuan chip. On the surface. To make St * better aware of the invention 'and How it works, it will be described by way of example but not by way of example and in conjunction with the accompanying drawings. Brief and single description of the drawings: Figure 1 shows a temperature-sensing IC device to be made into the present invention. The existing 1C device. Figures 2, 3, and 4 show the steps of a method of making a temperature-sensing 1C device embodiment of the present invention using the device of Figure 1. A method that can be transformed into a temperature-sensing device of the invention The integrated circuit device can be a SOIC (small integrated circuit) package (see Fig. 1), which contains a silicon chip (or chip) 12 encapsulated in a plastic insulating material 14. The 1C device 10 The terminal 16 is connected by a lead wire (not shown) to the electronic paper size provided in the chip 12. The Chinese national standard (CNS) A4 specification (210 X 297 mm) is applicable. ---? --- J-- ---------- r --- Order --------- ^ — ^^ 1 f Please read the general information on the back? Matters before filling out this page} 523883 5. Description of the invention ( 4) and form the electrical contacts of the circuit.

A 經濟部智慧財產局員工消費合作社印製 為製成本發明之裝置,至少有一部份的晶片〖2表面首 先要被以拆封程度來曝現。在此程序中該裝置丨〇於估測設 有該晶片12處的表面區域會被加熱及化學蝕刻,例如使其 接受一被控制的發烟硝酸流或發烟硫酸流。該蝕刻會持續 進行至該晶片12至少有部份表面曝現於一凹穴丨8中為止, 該凹穴18會延展伸出該裝置10之一邊緣2〇(見第2圖)。此 必須小心以確保所有的導線連結於該晶片丨2及該各端子i 6 保持完整無損。 有熱偶2 2係藉將不同的熱偶線一起溶合於一小焊珠 24中(見第3圖’該等熱偶線係以一單線來示意代表),其 會形成該熱偶接頭。該熔接可藉點焊為之。該熱偶接頭Μ 嗣會被利用導熱黏劑來直接固設在晶片12的曝現頂面上。 在塗敷該導熱黏劑之前,該熱偶22最好係沿著該凹穴丨8的 底部來放置,並有一丙烯酸樹脂類的黏劑被敷設在或靠近 於26處(見第3圖)來固定該熱偶22的位置,俾可將該導熱 黏劑施加於該接頭24。該導熱黏劑最好係為美國以叫A Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs To make the device of the present invention, at least a part of the chip [2] must first be exposed with the degree of unpacking. In this procedure, the device estimates that the surface area at which the wafer 12 is provided will be heated and chemically etched, such as to receive a controlled flow of fuming nitric acid or fuming sulfuric acid. The etching will continue until at least a portion of the surface of the wafer 12 is exposed in a cavity 丨 8, and the cavity 18 will extend beyond an edge 20 of the device 10 (see FIG. 2). Care must be taken to ensure that all the wires connected to the chip 2 and the terminals i 6 remain intact. There are thermocouples 2 and 2 which fuse different thermocouple wires together in a small welding bead 24 (see Figure 3 'these thermocouple wires are represented by a single wire), which will form the thermocouple joint . This welding can be done by spot welding. The thermocouple joint M 嗣 is directly fixed on the exposed top surface of the wafer 12 by using a thermally conductive adhesive. Before applying the thermally conductive adhesive, the thermocouple 22 is preferably placed along the bottom of the cavity 丨 8, and an acrylic resin-based adhesive is placed at or near 26 (see Figure 3) To fix the position of the thermocouple 22, the thermal conductive adhesive can be applied to the joint 24. The thermally conductive adhesive is best known as U.S.A.

Warwick· R.I· 02893 的 Mereco Technologies公司所製造的 XLN-589產品。該接頭24會被固定在晶片12的表面上,而 該黏劑會澆注於其上來形成直接固設。就XLN_589黏劑而 言,其最大的黏接強度係可在65t烘烤4小時,或在室溫Μ °C烘烤48小時來達到。 當在該接頭24的導熱黏劑乾固之後,先前被除掉的包 封材料14會被以一儘可能接近原來材料14之溫度特性的包 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱 523883XLN-589 manufactured by Mereco Technologies of Warwick R.I. 02893. The joint 24 is fixed on the surface of the wafer 12, and the adhesive is poured on it to form a direct fixation. As for the XLN_589 adhesive, its maximum adhesion strength can be achieved by baking at 65t for 4 hours, or baking at room temperature for 24 hours. After the thermally conductive adhesive of the joint 24 is dried, the previously removed encapsulating material 14 will be coated with a paper sheet that is as close to the temperature characteristics of the original material 14 as possible. The Chinese paper standard (CNS) A4 specification applies. (210 X 297 Public Love 523883

經濟部智慧財產局員工消費合作社印制衣Printing of clothing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

封物或澆鑄化合物28來回補(即該凹穴18將被填滿)。一配 注器30乃可被用來將該澆鑄材料28注入凹穴18中至其填滿 為止(見第4圖)。一適用於許多1(:裝置的澆鑄化合物係為 ECN-809亦由Mereco Techn〇1〇gies公司所製造者。此化合 物可在100 c烘烤2小時來烘乾。過多的硬化材料28嗣會被 磨掉,而在原來的裝置10中留下平面,然後此平面可按需 要來被清潔及上墨。 嗣最好有一連接器32固設於該熱偶線22的自由端,俾 供該熱偶能連接於一測溫電路或裝置。於此,該二導線的 極性乃須要被查知’且該連接器種類須匹配於所使用的熱 偶線形式(例如,7”、”K’,或,’丁”型)。然後可決定該溫度感 測IC裝置的校準特性。 應可瞭解一測試處理器的溫度校正係使用一對應於所 要處理及測試的1C裝置種類之溫度感測Ic裝置來進行。因 此本發明的方法乃適用於許多不同種類的Ic裝置,包括前 在背景部份中所提到之該各種類,卩其它正常須被置於一 處理器之設定溫度中來準備接受電測試者。 以上所述之本發明係很容易可在所述細節之外再予變 更、修正及/或附加,但應可瞭解本發明係含括所有在下 列申請專利範11内之該等變更、修正及/或附 。 523883 A7 B7 五、發明說明(6 元件標號對照 10…積體電路裝置 12…矽晶片 14…塑膠絕緣材料 16…端子 18···凹穴 2 0…邊緣 22…熱偶 24…焊珠(熱偶接頭) 28…澆鑄化合物 30…配注器 32…連接器 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製The seal or casting compound 28 fills back and forth (ie the cavity 18 will be filled). A dispenser 30 can be used to inject the casting material 28 into the cavity 18 until it is filled (see Figure 4). A casting compound suitable for many 1 (:) devices is ECN-809 and also manufactured by Mereco Technogies. This compound can be baked at 100 ° C for 2 hours to dry. Too much hardened material will It is worn away, leaving a flat surface in the original device 10, and then this flat surface can be cleaned and inked as needed. 嗣 It is preferable to have a connector 32 fixed to the free end of the thermocouple wire 22, for this purpose The thermocouple can be connected to a temperature measurement circuit or device. Here, the polarity of the two wires must be checked 'and the type of connector must match the type of thermocouple wire used (for example, 7 "," K' , Or, Ding type). Then the calibration characteristics of the temperature sensing IC device can be determined. It should be understood that the temperature correction of a test processor uses a temperature sensing IC corresponding to the type of 1C device to be processed and tested. Therefore, the method of the present invention is applicable to many different types of IC devices, including the various types previously mentioned in the background section, and others must be prepared at a set temperature of a processor. Accept the electric test. The present invention described can be easily changed, amended and / or added beyond the details, but it should be understood that the present invention encompasses all such changes, amendments and / or within the scope of patent application 11 below Attached. 523883 A7 B7 V. Description of the invention (6 Component number comparison 10 ... Integrated circuit device 12 ... Silicon wafer 14 ... Plastic insulation material 16 ... Terminal 18 ... Dental 2 0 ... Edge 22 ... Thermocouple 24 ... Solder beads (Thermocouple connector) 28 ... Casting compound 30 ... Dispenser 32 ... Connector (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

523883 Η、523883 Η, 10 ^3883 申請專利範圍 •如,專利範圍第7項之方法,其中該晶“ =面編刻除掉該包封材料而被曝現。 .如宇請專利範圍第7或8項之方法,其中 勺人 同的金屬線而被焊接在— 、〜’’’、匕3 1 “味 在一起形成該接頭,且該接#错黏接來直接固設在該曝現的晶片表面上。矣心10·如申請專利範圍第9項之方法,其中該接頭係使用導執 黏劑來直接固設在曝現的晶片表面上。 導…、 少 請先¾¾背面之;1音?事項再填寫本頁} n H _ 裝 訂: ;線· 經濟部智慧財產局員Η消費合作社印製 適 度 尺 |張 紙 本 格 規 4 )A -S l(CN 準 標 家 國 國 公 一297 1110 ^ 3883 Application for Patent Scope • For example, the method of item 7 of the patent scope, where the crystal "= mask is engraved and the encapsulation material is removed and exposed.. Such as the method of item 7 or 8 of the patent scope, where The same metal wire is welded to the-, ~ '", dagger 3 1" to form the joint together, and the joint is misbonded to be directly fixed on the exposed wafer surface. Mind 10. The method according to item 9 of the patent application, wherein the joint is directly fixed on the exposed wafer surface by using a guide adhesive. Guide ..., less, please do the first one on the back; 1 tone? Please fill in this page again for the matter} n H _ Binding:; Line · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives Appropriate Ruler | Sheet Paper Rule 4) A -S l
TW089110905A 2000-05-25 2000-06-03 Temperature sensing integrated circuit device TW523883B (en)

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PCT/SG2000/000076 WO2001090710A1 (en) 2000-05-25 2000-05-25 Thermocouple passing through encapsulant of integrated circuit

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TWI563243B (en) * 2011-07-11 2016-12-21 Microchip Tech Inc Integrated circuit device strip tester

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EP1568978B1 (en) * 2004-02-24 2014-06-04 Siemens Aktiengesellschaft Temperature sensor
US7513686B2 (en) * 2006-02-27 2009-04-07 Advanced Micro Devices, Inc. Circuit lid with a thermocouple
DE112022003889T5 (en) * 2021-09-17 2024-05-29 Rohm Co., Ltd. SEMICONDUCTOR COMPONENT, CONTROL COMPONENT FOR SEMICONDUCTOR COMPONENT, MANUFACTURING METHOD FOR SEMICONDUCTOR COMPONENT

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DE3715231A1 (en) * 1987-05-07 1988-11-17 Siemens Ag MEASURING DEVICE FOR DETERMINING THE TEMPERATURE OF SEMICONDUCTOR BODIES, METHOD FOR PRODUCING THE MEASURING DEVICE AND METHOD FOR DETERMINING THE TEMPERATURE OF SEMICONDUCTOR BODIES DURING TEMPERATURE PROCESSES
JPH02112254A (en) * 1988-10-21 1990-04-24 Oki Electric Ind Co Ltd Surface temperature measurement of semiconductor wafer and device therefor
JPH02213150A (en) * 1989-02-14 1990-08-24 Oki Electric Ind Co Ltd Semiconductor substrate surface temperature measuring wafer
JPH06310580A (en) * 1993-04-20 1994-11-04 Nippon Steel Corp Measuring method for temperature of semiconductor wafer and semiconductor wafer with temperature measuring means
JP3663035B2 (en) * 1997-07-30 2005-06-22 川惣電機工業株式会社 Temperature measuring wafer for semiconductor wafer heat treatment furnace
JP3939410B2 (en) * 1997-11-18 2007-07-04 Sumco Techxiv株式会社 Method for measuring processing surface temperature etc. of hard substrate, measuring device thereof, and hard substrate for measurement thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI563243B (en) * 2011-07-11 2016-12-21 Microchip Tech Inc Integrated circuit device strip tester

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