TW520401B - High purity tantalum target, ionized metal plasma sputtering chamber with the same, method for improving tantulum-containing barrier layer and capacitor with the layer - Google Patents
High purity tantalum target, ionized metal plasma sputtering chamber with the same, method for improving tantulum-containing barrier layer and capacitor with the layer Download PDFInfo
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- TW520401B TW520401B TW088119605A TW88119605A TW520401B TW 520401 B TW520401 B TW 520401B TW 088119605 A TW088119605 A TW 088119605A TW 88119605 A TW88119605 A TW 88119605A TW 520401 B TW520401 B TW 520401B
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- 230000004888 barrier function Effects 0.000 title claims abstract description 47
- 239000003990 capacitor Substances 0.000 title claims abstract description 14
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 title claims description 40
- 239000002184 metal Substances 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 10
- 238000002294 plasma sputter deposition Methods 0.000 title claims 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 239000010949 copper Substances 0.000 claims abstract description 29
- 239000000356 contaminant Substances 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 11
- 239000010931 gold Substances 0.000 claims abstract description 11
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 239000010955 niobium Substances 0.000 claims abstract description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 239000010937 tungsten Substances 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 5
- 239000011733 molybdenum Substances 0.000 claims abstract 5
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 239000003344 environmental pollutant Substances 0.000 claims description 16
- 231100000719 pollutant Toxicity 0.000 claims description 16
- 239000010985 leather Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910052778 Plutonium Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims 1
- 229910052776 Thorium Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 239000000975 dye Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 238000004347 surface barrier Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000013077 target material Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- -1 argon ions Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- SZZXSKFKZJTWOY-UHFFFAOYSA-N azanylidynesamarium Chemical compound [Sm]#N SZZXSKFKZJTWOY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
520401 A7 B7 五、 發明説明( 經 濟 部 智 慧 財 產 局 消 f 合 作 社 印 製 t明領域: 本發明係關於半導體7C件中較佳之銅金屬線及金屬 接觸洞之阻障層的沉積,更特定說來,本發明係關於具增 強阻障效果之含叙阻障層之沉積。 t明背景: 在半導冑元件的製itt中,導f金屬接觸洞及導電金 屬線係沉積於介電層之上方,鋁向來就是此金屬導體的免 好選擇。銘在升溫的製程中會擴散進入矽材,所以傳統上 都將-阻障層置於基材和銘之間’以避免銘的擴散或銘擴 散進入基材所形成的突出狀尖峰(spiking)。 銅在這方方面的應用上要更勝於鋁,如銅金屬線造成 的電遷移就要比銘肩^、’但是在升溫的^呈中或在外加電 場的情況下’銅會和石夕作用,也會擴散進入不同的介電層 中,如二氧化珍中。所以較好的阻障層對銅線或其金屬二 觸洞之重要性就如其對銘金屬線或其金屬接觸洞一樣重 要。 妲是一種很好的導體,而且若以銅覆蓋其上時,妲能 夠是一種良好的濕潤試劑,故以姮作為銅之阻障層實不失 為-不錯之選擇。當以姮作為阻障層日寺,它能夠有效地阻 止銅擴散進入基材中。較諸於姮,氮化妲又是一更好的銅 《阻障層〈選擇’ E可在氮氣環境中濺鍍姮而形成,但它 的選擇性較㈣高。因為,氮化師㉟的選擇性都比銅來得 高,所以原本所述以銅為導電線之優點會因選用氮化纽和 第2頁 本紙張尺度適(7^^ (請先閱讀背面之注意事項再填寫本頁) €衣· 、11 W0401 A7
叙而稍稍下降。A盖4 為口加利用銅之絕佳導電性,氮 層必須是足夠均勾的,H v/ Al Ί ’ 且必頊要儘可能的薄。 傳統的賤缝方法祐Τ、& A m 、適6用以沉積均勻的薄膜在小 直徑的開口上,對於且古、、_ ^ 、间7衣寬比的開口更是如此。傳統的 歲鍍方法是在高直空麻会 士、、 …玉應至中進行的,其中靶材被連接至一 4流電源,以利該免好& a、,
材内的材料被濺擊出來;基材由一 A 材支撐器固定,而支撐哭太* 、 牙°°本身則和革巴材相隔並與其平行· 並將氬氣通人反應室巾;永久磁鐵被固定絲材之背面; 以便在㈣通電時將氬離子吸引至料之表面,由於氬離 子撞擊革巴材之表面,知好主 祀材表面的粒子便被濺擊出來,並隨 即/儿和在基材 < 上。但很可惜的I,此賤鍍不只發生在垂 直:向’而是除了水平以外的所有其它方向,這使得在對 具南深寬比之開口進;f干指亡土 . 延仃填无時,在開口之側壁及底部所佈 滿的錢擊粒子要較開口之頂部為少,這種現象可以參見第 1圖之圖示說明。圖中顯示靶材物質1〇在具高深寬比開口 16之頂部12及上側壁14上之分佈情形,這種分佈情形說 明了濺擊粒子較難進入_口 16之底部18及底部侧壁2〇 部份,因此就以一阻障層來說,這樣的鍍膜結果顯然不夠 均勻。 為了改進原濺擊粒子行進的垂直度,於是便有一較佳 的濺鍍反應皇被開發出來,它是將感應線圈耦合至射頻電 源,以在濺鍍反應室中之靶材和基材之間形成一高密度電 漿’因為革巴材粒子係由革巴材中濺擊出來,所以它們會穿越 線圈附近的電漿區域,並在此區域中被離子化。當基材經 第3頁 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇'〆297公釐) (請先閲讀背面之注意事項再填寫本頁) 衣·
、1T 經濟部智慧財產局員工消費合作社印製 520401 五、 發明説明( 由基材支撐器上的電壓而得到偏壓之後,基材就帶有負 電’在電漿區域產生的乓電濺擊離子就被吸引至基材,這 些正電離子將以更偏垂直方向的方式打在基材上,那麼在 這種反應室中就有更多的濺擊粒子會沉積在開口的底部 和底部側壁,於是底部覆蓋的程度得到大大的提升,濺鍍 層便顯得更均勻。 此改良式的濺鍍反應室稱為,,離子化金屬電漿,, (ionized metal Plasma)或”IMP,,反應室,在第2圖中有其 圖示描述。此IMP反應室170包含一傳統的鈕靶材172, 它被置放在反應室170頂部牆173上;一對極性反置的磁 鐵176及178則位於靶材172上方;一基材支撐器ι74將 基材175支撐於其上方;一電源18〇連接至靶材172 ; 一 射頻電源1 8 2則連接至基材支撐器1 7 4 ; 一控制器2 〇 〇用 以fe制氣流之流動,一螺旋線圈1 8 6位於把材1 7 2及基材 支撐器174之間,其中螺旋線圈可以是多圈或單圈,但最 好疋以和|巴材1 7 2相同的材料製成,它也同樣被連接至 射頻電源188 ;答器192及194中的氣體(如氬和氮)由氣 流閥196及198分別對其計量,並通至反應室17〇中;反 應室内的壓力由低溫繁浦19〇經由一三位閘閥(three-position gate valve) 199 控 制氣流 由入口 191 流 入反應 17〇 而控制之。 假設反應室内的壓力非常高,也就是說約在1 〇到數 百亳托爾(millitorr)之間,内部感應耦合線圈186就能在 革巴材172及支撐器電極174之間產生高密度電漿;若室内 ‘紙張尺度適用中國國家標準(CNS ) A4規格(210><297公釐)
I ^ Γ ^||^衣-- (請先閱讀背面之注意事項再填寫本百C 訂 經濟部智慧財產局員工消費合作社印製 520401 A7 B7 五、發明説明( (請先閱讀背面之注意事項再填寫本頁) 壓力太低時,所產生的粒子就會太少,且在通電的線圈區 域中,金屬的離子化就顯得不足。此時,可以利用閘閥1 99 來調節抽氣速度,並因而調整反應室1 70内的壓力至較理 想範圍内’ 一般之理想範圍約在1 0-1 00毫托爾之間。 儘管IMP反應室的使用使得沉積的阻障層變得更強健 穩定,均勻性更驅理想,但其中仍存在不少問題,所以目 前對於製造銅線和銅接觸洞所用之阻障層,即含叙膜層之 沉積設備及方法仍在尋求更好的解決之道中。 發明目的及概述: 我們發現鈕靶中的雜質含量對含鈕阻障層之特性有 很大的影響,若在IMP反應室中使用的是高純度的鉦靶, 那麼製造銅線及銅接觸洞之含鈕阻障層所構成的金氧半 場效電晶體電容之壽命及量產能力就能大幅提升。另若以 咼純度叙材料當作IMP反應室之線圈,今曼主p ^至乳+ %政電晶體 電容之壽命及量產能力亦能大幅提升。 圖式簡單說明: 經濟部智慧財產局員工消費合作社印製 口之部 氣相沉積反應室之剖 第1圖為習知技術中一開口處之剖面圖,其中該開 份區域為材料充填。 第2圖為本發明中所使用更新之物理 面不意圖。 第3圖為一測試電容之剖面示意圖。 第4圖為習知技術使用之把材在時間 > 二 <操效累積機率 第5頁 本紙張尺度適财_家縣(CNS ) M規格(21GX297公羡 520401 A7 B7 五、發明説明() 圖。 第5圖為本發明中改善之靶材在時間軸上之無效累積機率 圖。 第6圖為習知技術使用之靶材在時間軸上之三種測試之無 效累積機率圖。 第7圖為本發明中改善之靶材在時間軸上之兩種測試之無 效累積機率圖。 圖號對照說明: (請先閱讀背面之注意事項再填寫本頁) 衣· 經濟部智慧財產局員工消費合作社印製 10 靶材物質 12 頂部 14 上側壁 16 開口 20 底部侧壁 110 基材 112 介電層 114 阻障層 116 銅金屬層 118 覆蓋層 170 離子化金屬電漿反應室 172 傳統靶材 173 頂部牆 174 基材支撐器 176 磁鐵 178 磁鐵 180 電源 182 射頻電源 188 射頻電源 190 低溫幫浦 191 入口 192 容器 194 容器 196 氣流閥 198 氣流閥 199 三位閘閥 200 控制器
、1T 第6頁 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 520401 五、發明説明( 壁il月詳細說明: 形成銅金屬線之含备阻障層的強健穩定性可清楚地 *金氧半場效電晶體電容結構的電性測試得知,此電容具 有Sl/Sl〇x/TaN阻障層/銅結構,並在溫度275〇C及應力 2MV/Cm的條件下進行溫度應力(bias temperatures stress 叫BTS)測試,第3圖中所顯示的即一適合的測試電容。 邊圖中介電層U2覆蓋在矽基材之上11〇,該介電層112 可為碎之氧化物,一般厚度大約是1〇〇〇埃左右。一薄阻 障層1 1 4 >儿積在介電層i i 2上,薄阻障層工i 4上則沉積一 層銅膜H6,銅膜116之上方另有一能加上電壓之覆蓋層 8流、、二氧化物層的電流並可測得。當銅經由阻障層擴 散進入氧化物層時,在氧化物中將出現嚴重的不良,其中 平均無效時間(MTTF)可用以評估阻障層的阻障性能,在不 良分佈中可知各資料點的標準差。 士實驗中,我們發現IMP反應室中若使用超高純度的 纽製h乾或/及線圈將有較好的鼓阻障層特性。 為了以數字說明此一發現,於是我們對數種姮靶之金 屬及非金屬污染物雜質量進行測試,其各雜質量及濃度並 以ppm表示,並將結果列於第1表格中。 弟1表格 雜質量 #巴材1 ---—- 靶材2 #巴材3 * 革巴材4 鋁 10 5 <0.1 鈷 20 5 <0.1 第7頁 表紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) I J---Γ 衣-- (請先閱讀背面之注意事項再填寫本頁)
、1T 經濟部智慧財產局員工消費合作社印製 520401 Α7 Β7 五、發明説明() 經濟部智慧財產局員工消費合作社印製 鉻 20 5 <0.1 銅 20 5 <0.1 鐵 50 15 20 <0.1 4甲 3 0.1 <0.1 4孟 5 5 <0.1 鋼 5 0.001 <0.1 鑷 50 5 10 <0.1 錫 5 ί甴 0.001 <0.5 氮 50 15 10 10 • 200 15 50 15 硫 40 <0.1 锆 5 <0.1 鎢 25 30 2.5 鈦 10 5 10 矽 25 15 <0.1 鈮 150 30 8.1 is 100 40 <0.1 鎂 10 0.5 <0.1 鈣 10 5 <0.1 硼 2 <0.1 鋰 1 0.001 <0.1 碳 50 10 50 10 氫 5 10 3 第β頁 本紙張尺度適用中國國家標準(CNS ) Α4規格(210 X 297公釐) ^---Γ 衣-- (請先閱讀背面之注意事項再填寫本頁) 訂 520401 A7 B7 五、 發明説明( 金 4土 之總金屬雜質 339 統計之總非金屬雜質 340 統計之總雜質 679 295.6 47 342.603
經濟部智慧財產局員工消費合作社印製 *未完成之分析 上述箭革巴所構成之測试遠容測試結果中顯示第 革巴 材形成之阻障層之特性最差,第二靶材形成之阻障層之特 性尚可接受,第三靶材形成之阻障層之特性則優於第一及 第二靶材所形成之阻障層,此靶材雖然含有較多的氧及 碳,但其中的鈮卻比較少,由此可明顯知道金屬雜質對阻 障層帶來的逆向效應要Μ非金屬雜質為甚。上述中最純白勺 第四靶材所形成的阻障層特性則為最佳。 在此沉積200埃厚之氮化妲當作阻障層,並以第二革巴 材製作銅電容,第二靶材製成電容之無效時間之累積機率 示於第4圖,此時間以小時計,平均無效時間為6·〇小時。 第5圖為第四靶材製成電容之無效時間之累積機率 圖,此時間以小時計,平均無效時間為8.0小時。 重覆上述之測試,其中第二靶材重覆三次,第四革巴材 則重覆兩次,結果並分別圖示於第6圖及第7圖,此兩圖 的比較可知第四箭革巴所可重複使用性明顯優於第二箭 革巴。 雖然雜質較少的妲靶能夠得到較好阻障層之原因仍 不能確定,但可以相信的是在沉積時形成的钽及鈮及/或其 ------^----- (請先閱讀背面之注意事項再填寫本頁) 訂 第9頁 本紙張尺度適用中國國家標準(CNS ) Α4規格(21〇><297公釐) 520401 A7 B7 五、發明説明( 經濟部智慧財產局員工消費合作社印製 匕王屬Θ木物和金屬污染物之化合物及某些空氣污染物 -樣,都會對氮化-阻障層構成的元件帶來負面的效應, 其中上述之其它金屬物可以是鎢、鈦及鋁。 所以為了使用較好的靶材以使銅膜下之氮化钽阻障 層具有較長的壽命及較佳的可重覆性,㈣中的總雜質量 及雜質類型就必須要仔細調整。n ppm $位說來, '、鵠、銷及其它金屬含量必須小於5〇ppm,小於i〇ppm 則為更佳(選擇。但是乾材的選擇是以能形成較佳的阻障 層丨生此為原則’钽靶材中若有不能形成金屬化合物的污染 物’它的銅膜阻障層之特性會較差,這些污染物並不會為 孩靶材所製成的元件特性帶來負面的效應,所以鈕中的金 屬總污染物量必須要維持在3〇〇ppm以下,1〇〇ppm以下則 為更好的選擇’此外’在心中的金含量必須維持在15_ 以下,金含量必須維持在< 15ppm以下,鎢含量必須維持在 1 〇PPm以下,鋇含量必須維持在l〇PPm以下,所有其它的 金屬污染物含量必須維持在1 Oppm以下,氧含量必須維持 在l〇〇ppm以下,氮含量也必須維持在i〇〇ppm以下。 雖然以上已經對靶材所含之各種物質給予—範圍限 制,但在IMP反應室中仍必須以相同的低污染物含量妲材 貝來製作線圈及插鞘(pin),以確保所沉積的氮化妲具有優 異的阻障性能。 义 所以將IMP反應室中,之鈕靶材及姮線圈之污染物量降 低能夠確保钽靶材所製成的阻障層是強健穩定的,並能當 作銅金屬線及銅接觸洞之良好阻障層。 田 第10頁 本紙張尺錢财_家標準(CNS ) Α4^7Τϊ^297公釐) (請先閱讀背面之注意事項再填寫本頁) €衣- 520401 A7 B7五、發明説明() 雖然本發明之靶材係以上述之特定物質予以說明,但 某些特定污染物之定義分野則不明,且是以阻障層之阻障 性能來作為選擇依據的。並非所有的非金屬污染物都和金 屬污染物一樣會對阻障層帶來負面的效應,但某些金屬污 染物或它們與非金屬污染物構成的化合物卻會比其它金 屬對阻障層帶來的負面效應更大,所以如破、氮、氧、氫 等非金屬污染物量應限制在3 5 0 ppm以下,那麼熟知此項 技術者就能夠根據本發明而輕易了解某一特定鈕材料是 否為足夠強健而不會帶來負面效應。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 第11頁 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)
Claims (1)
- 52〇喂告 ^、、申明專利範圍 A8 B8 C8 D8规瓜21 1 · 一種在濺鍍反應室中用以製造含鈕阻障層之鈕靶,其 該Is包含不超過300 pprn的金屬污染物。 中 2 ·如申請專利範圍第1項所述之叙靶,其中上述之釦包本 不超過100 ppm的金屬污染物。 3 ·如申請專利範圍第1項所述之短靶,其中上述之鈕包本 不超過50 ppm的就。 4·如申請專利範圍第3項所述之銥靶,其中上述之 不超過lOppm的銳。 5·如申請專利範圍第3項所述之鉍靶,其中上述之起乾 含不超過1 〇 ppm的鉬、不超過1 〇 ppm的爲、不超過 PPm的金及少於10 ppm的其它金屬污染物。 包 15 經濟部智慧財產局員工消費合作社印製 6·如申請專利範圍第1項所述之姮靶,其中上述之起乾 含不超過350ppm的非金屬污染物。 7·—種電漿濺鍍反應室,包含一釵靶,其中該妲靶 超過300 ppm的金屬污染物。 包 不 • 一種離子化金屬電漿濺鍍反應室,包含一姮 丹τ該 輕乾包含不超過10 ppm的鈮、不超過1〇 ppm的銷、不 第12頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 520401 A8 B8 . * C8 D8 夂、申請專利範圍 超過10 ppm的鎢、不超過15 ppm的金及少於1 o ppm 的其它金屬污染物。 9·如申請專利範圍第8項所述之離子化金屬電漿濺鍍反應 室’包含一鼓靶,其中該钽靶包含不超過200 ppm的金 屬污染物及一基材支撐器,該基材支撐器與該姮靶平行 並相向而立,一線圈則位於該基材支撐器及該鈕靶之 間’其中該線圈的材質和該麵革巴的材質相同。 I 〇 ·如申請專利範園第9項所述之離子化金屬電漿濺鍍反 應皇’其中上述該赵革巴包含不超過1〇 ppm的銳、不超 過10 ppm的鉬、不超過ppm的鎢、不超過Η ppm 的金及少於1 〇 ppm的其它金屬污染物。 II ·如申請專利範圍第1 〇項所述之離子化金屬電漿濺鍍反 應室,其中上述該姮靶包含不超過35〇 ppm的非金屬污 染物。 經濟部智慧財產局員工消費合作社印製 12· —種電容,包含一含鈕阻障層,該含姮阻障層由一銓靶 錢鍍而形成,且包含不超過3〇〇 ppm的金屬污染物。 1 3 ·如申請專利範圍1 2所述之電容,其中上述該纽革巴包表 不超過10 PPm的鈮、不超過1〇 ppm的鉬、不超過 的鎢、不超過15 ppm的金及少於1〇 ρριη的其它金屬冷 第13頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ο 04 2 5 A8 B8 C8 D8 六 經濟部智慧財產局員工消費合作社印製 中請專利範圍 染物 1 4 ·如申請專利範圍1 2所述之電容,其中上述該麵靶包含 不超過3 5 0 p p m的非金屬污染物。 15 •/種用以改善之銅膜之含备阻障層之擴散阻障性能的 方法,該方法至少包含利用濺擊一靶以濺鍍該含鈕阻障 層,其中該靶包含不多於300 ppm的金屬污染物。 1 6 ·如申請專利範圍第1 5項所述之方法,其中該革巴包含不 超過50 ppm的銘。 1 7.如申請專利範圍第1 5項所述之方法,其中該革巴包含不 超過10 ppm的鈮、不超過10的鉬、不超過1 〇 ppm的 搞、不超過15 ppm的金及不超過10 ppm的其它金屬污 染物。 1 8.如申請專利範圍第1 5項所述之方法,其中該含麵阻障 層包含一氮化輕層。 1 9.如申請專利範圍第1 5項所述之方法,其中上述該靶包 含不超過350 ppm的非金屬污染物。 第η頁 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公變)
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TW088119605A TW520401B (en) | 1998-11-12 | 1999-11-09 | High purity tantalum target, ionized metal plasma sputtering chamber with the same, method for improving tantulum-containing barrier layer and capacitor with the layer |
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JP (1) | JP2002530526A (zh) |
KR (1) | KR20010080437A (zh) |
DE (1) | DE19983727T1 (zh) |
GB (1) | GB2359825A (zh) |
TW (1) | TW520401B (zh) |
WO (1) | WO2000029636A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7686926B2 (en) | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
US7833387B2 (en) | 2004-01-07 | 2010-11-16 | Hoya Corporation | Mask blank manufacturing method and sputtering target for manufacturing the same |
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US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
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JPH0621346B2 (ja) * | 1986-06-11 | 1994-03-23 | 日本鉱業株式会社 | 高純度金属タンタル製ターゲットの製造方法 |
US5111355A (en) * | 1990-09-13 | 1992-05-05 | National Semiconductor Corp. | High value tantalum oxide capacitor |
DE69233201T2 (de) * | 1991-01-25 | 2004-07-01 | Kabushiki Kaisha Toshiba, Kawasaki | Hochreine leitende Filme und ihre Anwendung in Halbleiteranordnungen |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
TW358964B (en) * | 1996-11-21 | 1999-05-21 | Applied Materials Inc | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
JP3755559B2 (ja) * | 1997-04-15 | 2006-03-15 | 株式会社日鉱マテリアルズ | スパッタリングターゲット |
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1999
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- 1999-11-05 GB GB0112058A patent/GB2359825A/en not_active Withdrawn
- 1999-11-05 DE DE19983727T patent/DE19983727T1/de not_active Withdrawn
- 1999-11-05 KR KR1020017006025A patent/KR20010080437A/ko not_active Application Discontinuation
- 1999-11-05 WO PCT/US1999/026290 patent/WO2000029636A2/en not_active Application Discontinuation
- 1999-11-09 TW TW088119605A patent/TW520401B/zh active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7833387B2 (en) | 2004-01-07 | 2010-11-16 | Hoya Corporation | Mask blank manufacturing method and sputtering target for manufacturing the same |
US7686926B2 (en) | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
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DE19983727T1 (de) | 2002-03-21 |
KR20010080437A (ko) | 2001-08-22 |
WO2000029636A9 (en) | 2001-07-19 |
WO2000029636A3 (en) | 2000-09-08 |
GB0112058D0 (en) | 2001-07-11 |
JP2002530526A (ja) | 2002-09-17 |
GB2359825A (en) | 2001-09-05 |
WO2000029636A2 (en) | 2000-05-25 |
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