經濟部智慧財產局員工消費合作社印製 518720 A： —一____B7 五、發明說明（） 發明領域： 本發明係有關於一種雙重金屬鑲嵌（Dual Damascene) 結構之開口（Openings)的製造方法，特別是有關於一種先蝕 刻介層窗（Via First)之雙重金屬镶喪結構之開口的製造方 法。 發明背景： 過去數十年來，晶片内部的導線材料大都採用金屬 鋁。然而，隨著線寬尺寸的縮小’特別是0.2 5微米世代 以下，元件運算的速度明顯受到電阻值和介電值相乘 (Resistance Capacitance ; RC)延遲的增加而有顯著的下 降。目前，面對更密集的電路設計’已必須選擇具有更低 電阻的金屬材料，例如銅（其電阻值約為1 · 6 7微歐姆-公 分），來取代鋁（其電阻值約為2.6 6微歐姆-公分）。另外， 並搭配低介電常數之介電材料來建構多層金屬連線，以改 善RC延遲的現象。 由於銅具有低電阻的特性，因此以銅為導線的元件可 承受更密集的電路排列。如此一來，可大幅縮減所需金屬 層的數目，進而降低生產成本，並提升元件的運算速度。 此外’銅還具有較尚的抗電致遷移（EiectroIimigration)能 本紙張尺度適用中國國家標準（CNS)A4規格(210x 297公釐了 --------'---*···-------訂--------- (請先閱讀背面之注意事項再填寫本頁) 518720 A7 五、發明說明（） 力’因此以銅為導線的元件具有更長的壽命及較佳的穩定 性。然而，由於銅無法用傳統的乾式蝕刻（Dry Etch^g) 技術來進行導線佈植，因此目前金屬導線的製作大都採用 镶後方式’將銅金屬充填到已形成有金屬導線圖案之介電 層中。 雙 製作介 併完成 程步驟 術可區 式、以 之微影 而先# 上進行 較大的 重金屬鑲嵌技術係在製作金屬導線之溝渠時，同步 層窗。因此，僅需進行一道金屬填充步驟，便可一 金屬導線以及金屬導線間之連接導線，達到簡化製 的目的。依乾式蝕刻方式的不同，雙重金屬鑲嵌技 分成先姓刻溝渠（Trench First)式、先蝕刻介層窗 及自我對準式（Self-Aligned)等。其中，由於介層窗 (Photolithography)製程遠較溝渠之微影製程困難， 刻介層窗的方式，其介層窗之微影製程係在平坦面 。因此，先蝕刻介層窗式的製程較為容易，且具有 製程窗口（Process Window)。 (請先閱讀背面之注意事項再填寫本頁) # 訂---------線. 經濟部智慧財產局員工消費合作社印制农 5月參照第1圖至第5圖’其係繪示習知雙重金屬鑲嵌 結構之開口的製造流程剖面圖。製作雙重金屬鑲喪結構之 開口時，首先在半導體之基材100上覆蓋一層薄氮化矽 (ShN4)層當作介層窗蝕刻的蝕刻終止層（Etching St〇p Layer) 102，再於蝕刻終止層1〇2上形成介電層1〇4，其中 介電層1 04之材料可例如為低介電常數材料或超低介電常 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） 518720 A7 B7 五、發明說明（） 數材料等。而後，為了防止反光影響光阻曝光的準確度， 在介電層104覆蓋一層抗反射介電覆層（Dielectric Anti-Reflective Coatings; DARC)106。 當抗 反射介 電覆層 106 形成後’在抗反射介電覆層丨〇6上形成具有介層窗圖案之 光阻層108，並暴露出部分之抗反射介電覆層ι〇6，而形成 如第1圖所示之結構。 接著，利用乾式蝕刻法，並以光阻層1 〇 8為蝕刻罩幕， 在暴露之抗反射介電覆層106上進行餘刻，直至暴露出部 为之钱刻終止層102，而在抗反射介電覆層1〇6以及介電 層104中形成介層窗110,如第2圖所示。完成介層窗ηο 之蝕刻，並將光阻層108移除後，先於介層窗丨丨〇中充填 些許有機（Organic)材料層Π3,藉以保護蝕刻終止層i〇2， 使蝕刻終止層1 02在後續之溝渠1 1 6(見第4圖）蝕刻中，不 會受到蝕刻而穿透，進而避免基材1〇〇受損。再形成一層 深紫外光（Deep Ultra Violet ; DUV)光阻層丨12覆蓋在抗反 射介電覆層106以及有機材料層113上，並填滿介層窗 1 1 0。此時，利用微影製程將溝渠圖案轉移到深紫外光光阻 層112上，並暴露出部分之抗反射介電覆層1〇6以及介層 由110。再對介層窗110中之深紫外光光阻層112進行回 蝕刻’而在介層窗110中形成光阻層114,如第3圖所示 之結構。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) m ϋ If n n n ϋ 一 0, · flu n n flu I ϋ n I · 經濟部智慧財產局員工消費合作社印製 518720 A7 B7 五、發明說明（） 然後，以深紫外光光阻層丨12為硬罩幕，並利用電漿 在暴露之抗反射介電覆層106以及光阻層114上進行乾式 蝕刻，藉由控制乾式蝕刻之時間，而在抗反射介電覆層丨0 6 中、介電層1 04中、以及介層窗丨1 〇上形成溝渠n 6，如 第4圖所示。由於’構成光阻層1 14之深紫外光光阻會與 介電層104反應，而在光阻層114與介電層1〇4之間的介 面產生鹼基之化合物。此外，當光阻層114的高度太高時， 會導致後續之曝光步驟，無法將光阻層丨丨4曝到溝渠1 1 6 所需深度。因此’在去除殘餘之光阻層1 14、有機材料層 113、以及深紫外光光阻層112之後，而形成雙重金屬鑲嵌 結構之開口 120時，溝渠η 6中會有栅欄狀（Fence)突起π 8 形成，如第5圖所示之結構。 形成於溝渠1 1 6中的柵欄狀突起1 1 §，會使後續之阻 障層（Barrier Layer)以及電化學電鍍（Electr〇chemical Plating，£0?)>儿積具有較差的階梯覆蓋（step Coverage)。 而且，在元件運作時，溝渠116中的柵襴狀突起118更會 造成元件電性的不穩定，而降低元件的可靠度。另一方面， 在進行溝渠1 1 6蝕刻期間，深紫外光光阻層π 2會同時受 到電漿的攻擊，若情況過於嚴重，則會導致關鍵尺寸 (Critical Dimension ; CD)不當擴大，影響元件的佈局。 發明目的及概述： 5 本紙張尺度適用中國國家標準（CNS)A4規烙（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) -< u i n —J i n n· I n n n n n n I— I _ 經濟部智慧財產局員工消費合作社印製 518720 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明（） 鑒於上述習知製造雙重金屬鑲嵌結構之開口時，會在 溝渠中形成柵攔狀突起，並導致關鍵尺寸變大，而導致元 件的電性穩定度降低，更進而嚴重影響元件的可靠度。 本發明之一目的為提供一種雙重金屬鑲嵌結構之開口 的製造方法，其係在介層窗形成後，進行溝渠蝕刻前，先 在較高之反應壓力下，對當作蝕刻硬罩幕之深紫外光光阻 層進行鈍化，而在深紫外光光阻層上以及側壁形成一層薄 薄的高分子層。因此，在溝渠蝕刻期間，上述之高分子層 可保護深紫外光光阻層，而避免深紫外光光阻層受到電製 的攻擊，進而防止元件之關鍵尺寸產生不當擴大。 本發明之另一目的為提供一種先蝕刻介層窗之雙重金 屬鑲喪結構開口的製造方法，其係在溝渠蝕刻前，深紫外 光光阻層之鈍化步驟完成後，以低於鈍化步驟之製程壓 力，消減（Trim)介層窗側壁上之光阻渣滓（Scum)以及部分之 光阻’以降低介層窗中光阻的高度，尤其是介層窗側壁旁 的光阻南度。因此，可增加後續之溝渠蝕刻的可靠度，並 獲得較佳之溝渠外型。 本發明之再一目的就是藉由溝渠蝕刻前所進行之鈍化 步驟以及消減步驟，確保溝渠蝕刻的品質，而防止柵攔狀 6 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐) ：------訂---------線 c請先閱讀背面之注音？事項再填寫本頁) 518720 A7 __— B7 五、發明說明（） 突起在溝渠中形成。當完成雙重金屬鑲嵌結構之開口的製 作後，隨後之阻障層沉積以及金屬層沉積，可獲得良好的 階梯覆蓋。因此’元件具有較佳之電性穩定度與品質，大 幅提升製程良率。 經濟部智慧財產局員工消費合作社印製 根據以上所述之目的，本發明更提供了 一種雙重金屬 鑲嵌結構之開口的製造方法，至少包括··提供一基材，其 中此基材上依序堆疊有一蝕刻終止層、一介電層、以及一 抗反射介電覆層，且一介層窗形成於上述之蝕刻終止層、 介電層 '以及抗反射介電覆層中，而約暴露出部分之蝕刻 終止層；形成一有機材料層充填部分之介層窗，且此有機 材料層覆蓋在暴露之蝕刻終止層上；形成一第一深紫外光 光阻層以及一第二深紫外光光阻層，其中第一深紫外光光 阻層覆蓋在上述之有機材料層上，而第二深紫外光光阻層 覆蓋在抗反射介電覆層以及第一深紫外光光阻層上，且此 第一深紫外光光阻層填滿介層窗；進行一第一蝕刻步驟， 藉以在上述之第二深紫外光光阻層中形成一溝渠圖案，並 約暴露出部分之抗反射介電覆層以及第一深紫外光光阻 層；去除部分之第一深紫外光光阻層，藉以開啟部分之介 層窗，而在開啟之介層窗的一側壁上形成複數個光阻渣 滓；以一第一製程條件所形成之一第一電漿對上述之第二 深紫外光光阻層進行一鈍化步驟，而形成複數個高分子薄 膜覆蓋在第二深紫外光光阻層之複數個表面上；以一第二 7 本紙張尺度適用中國國家標準（CNS)A4規格(210x297公 518720 A7 B7 五、發明說明（ 行條層 進程阻 壁製光 側三光 的第外 窗 一 紫 層用深 介利二 之.，第 啟滓之 開渣述 對阻上 漿光以 電些並 二這 ， 第除漿 一 去電 之以三 成藉第 形 ，一 所驟之 件步成 條減形 程消所 製一件 介阻 射光 反光 抗外 及紫 以深 層 三 電第 介之 在述 而上 ， 除 驟移 步及 刻以 姓 ·’ 二渠 第溝 一 一 行成 進形 幕中 罩層 硬覆 為電 第. 窗 膜層 薄介 子啟 分開 高全 、 完 層而 層 阻 光 光 外 紫 深 層 料 材 C 機層 有止 及終 以刻 ,蝕 之 分 部 出 露 暴 並 明 說 單 簡 式 圖 形 製 屬 圖 的金 列 下 以 輔 中 字 文 明 說 之 後 往 於： 將中 例其 施， 實述 佳闡 較的 的細 明詳 發更 本做 D 之 構 結 嵌 鐲 屬 金 tlSuf 雙 知 習 示 繪及 為以 圖 ； 5 圖 第面 至剖 圖程 1 流 第造 雙 之 例 施 實 佳 較。 一 圖 之面 明剖 發程 本流 示造 繪製 為的 圖口 12開 第之 至構 圖結 6 嵌 第鑲 (請先閱讀背面之注意事項再填寫本頁) 0 訂---------率 經濟部智慧財產局員工消費合作社印製 圖號對照說明： 100 基材 102 蝕刻終止層 104 介電層 106 抗反射介電覆層 10 8 光阻層 110 介層窗 112 深紫外光光阻層 113 有機材料層 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 518720 A7 B7 五、發明說明（） 1 14 光 阻 層 1 16 溝 渠 118 柵 欄 狀 突 起 120 雙 重 金 屬 镶嵌結 構之開口 200 基 材 202 蝕 刻 終 止 層 204 介 電 層 206 抗 反 射 介 電覆層 208 光 阻 層 210 介 層 窗 212 有 機 材 料 層 214 光 阻 層 216 光 阻 層 218 高 分 子 薄 膜 220 溝 渠 222 雙 重 金 屬 鑲嵌結; 溝之開口 (請先閱讀背喝之注意事項再填寫本頁) 0 發明詳細說明： 訂---------線. 本發明揭露一種雙重金屬鑲嵌結構之開口的製造方 法，適用於先蝕刻介層窗之雙重金屬鑲嵌結構製程，其係 在介層窗形成後，依序進行光阻層之鈍化步驟以及介層窗 側壁上之光阻渣滓之消減步驟，以提升溝渠蝕刻製程的可 靠度。為了使本發明之敘述更加詳盡與完備，可參照下列 描述並配合第6圖至第12圖之圖示。 經濟部智慧財產局員工消費合作社印製 請參照第6圖至第12圖，其係繪示本發明之一較佳 實施例之雙重金屬鑲嵌結構之開口的製造流程剖面圖。運 用本發明之方法製造雙重金屬鑲嵌結構之開口時，首先在 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 518720 五 、發明說明（ 制八显：基材200上覆蓋一層蝕刻終止層202，以準確控 二齒之#刻終點’其中㈣終止層2Q2之材料可例如 /切。再利用例如化學氣相沉積的方#，在㈣ 上覆蓋介電層204…介電層2〇4之材料為低介 電常數材料以及超低介電常數材料。在介電層2〇4形成 後，再於介電| 2。4上覆蓋一層抗反射介電覆層2〇心 以防止介電層204之表面反光影響光阻曝光的準確度 f抗反射介電覆層206後，先在抗反射介電覆層2〇6上覆 盍光阻層208，再利用例如微影製程將介層窗圖案轉移到 光阻層208上，並約暴露出部分之抗反射介電覆層2〇6, 而形成如第6圖所示之結構。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 此時’利用例如非等向性（Anisotropic)的乾式蝕刻法， 以蝕刻終止層202為蝕刻終點，對暴露之抗反射介電覆層 206以及其下之介電層2〇4進行蝕刻，而形成介層窗21〇, 如第7圖所示。接著，在介層窗210之底部填入有機材料 層2 1 2，藉以保護所暴露之蝕刻終止層202，並進一步地保 護姓刻終止層202底下之基材200，其中有機材料層212 的材料可例如為樹脂（Resin)。之後，再利用例如化學氣相 沉積的方式形成光阻層214覆蓋在有機材料層212以及抗 反射介電覆層206上，並填滿介層窗210，其中光阻層214 之材料可例如為深紫外光光阻。再利用例如微影製程將溝 渠圖案轉移至光阻層214上，並約暴露部分之抗反射介電 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) 518720 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 覆層206以及介層窗210，而在介層窗21〇中形成光阻肩 2 1 6此時對；丨層由2 1 〇中之光阻層2 1 6進行回儀刻步驟， 以去除部分之光阻層216,並開啟部分之介層窗21〇，而形 成如第8圖所示之結構。 將溝渠圖案轉移至光阻層2 1 4後，以第一製程條件所 形成之第一電漿對光阻層214進行鈍化步驟，而在光阻層 2 1 4之表面以及側壁上形成高分子薄膜2丨8，藉以保護光阻 層214，如第9圖所示。藉由高分子薄獏218的保護，可 使光阻層2 1 4在後續之溝渠蝕刻期間，不受蝕刻製程所使 用之電漿的攻擊，而使得光阻層2丨4的外型得以維持，進 而確保關鍵尺寸。其中，上述之第一製程條件至少包括控 制第一製程壓力在介於約50毫托爾（mT〇rr ; mT)與約五5〇 毫托爾之間；第一電力在介於約100瓦特（Watt ; w)與約 1 0 0 0瓦特之間；以及第一反應氣體的種類與流量。上述之 第一反應氣體至少包括碳氫氟化合物（cXHyFZ)、一氧化碳 (CO)、以及氮氣（N2) ’其中碳氫敗化合物之流量介於約每 分鐘 1 標準立方公分（Standard Cubic Centimeters Per Minute’ SCCM)至約20sccm之間’且一氧化碳之流量介於 約lOsccm至約200sccm之間，而氮氣之流量則介於約 lOsccm至約lOOsccm之間。在純化步驟進行期間，第一製 程壓力維持在較高壓的狀況，因此可避免高分子在介層窗 中生成’而使得高分子僅在具有較介層窗大之溝渠圖案的 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) --------^---------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 518720 五、發明說明（） 光阻層2 1 4表面以及側壁 /成，以利後續姓刻步驟進 行0 然後，以第二製程條件所 Φ ^ # a ^ 9 1^^. 生之第一電漿對介層窗210 f之光阻層216表面以u本肚 先f1層216與介層窗210側壁之 介面進行消減步驟，藉以去除 言降附者於其上之光阻渣滓，並 縮減位於介層窗2 1 〇側壁旁 土牙之光阻層216的高度，更進一 步地降低光阻層216的高度，如第1〇圖所示。上述之第二 製程條件至少包括控制第二製程壓力在小於約60毫托 爾；第二電力在介於約100瓦特至約1〇〇〇瓦特之間；以及 第二，應氣體之種類及其流量…，第二反應氣體至少 包括a*氣、氫氣（h2)、-氧化碳、以及氧氣（〇2)，而氣氣之 流量介於約l〇Sccm至約100sccm之間、氫氣之流量介於約 lOsccm至約500sccm之間、一氧化碳之流量介於約i〇sccm 至約20〇Sccm之間、以及氧氣流量介於約丨^⑽至約 2〇Sccm之間。由於第二製程壓力係控制在較低壓，因此第 二電漿較容易在介層窗210中進行反應，而不易對高分子 薄膜218以及光阻層214造成傷害。 依序完成光阻層214之鈍化步驟以及介層窗210中之 光阻渣滓的消減步驟後，便可進行溝渠220之蝕刻。以光 阻層2 1 4與高分子薄膜2 1 8為蝕刻罩幕，利用第三製程條 件所形成之第三電漿，並採用時間模式來控制蝕刻終點， 12 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） — — — — — — — — — — ----I-------II--- (請先閱讀背面之注意事項再填寫本頁) 518720 Λ： Β7Printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs 518720 A: — 一 ____B7 5. Description of the Invention () Field of the Invention: The present invention relates to a method for manufacturing openings of a dual metal inlay (Dual Damascene) structure, particularly The invention relates to a method for manufacturing an opening of a double metal buried structure of Via First. BACKGROUND OF THE INVENTION: For the past several decades, most of the wire material inside the wafer has been metal aluminum. However, with the reduction of the line width dimension, especially below 0.25 micron generation, the speed of component operation is significantly reduced by the increase of the resistance value and the dielectric value (Resistance Capacitance) delay. At present, in the face of denser circuit designs, it is necessary to choose a metal material with lower resistance, such as copper (which has a resistance value of about 1.6 μm-cm) to replace aluminum (which has a resistance value of about 2.6 6 Microohm-cm). In addition, a multilayer metal connection is constructed with a low-k dielectric material to improve the RC delay phenomenon. Due to its low resistance, copper-based components can withstand denser circuit arrangements. In this way, the number of metal layers required can be greatly reduced, thereby reducing production costs and increasing the computing speed of components. In addition, 'copper also has a relatively high resistance to electromigration (EiectroIimigration), which can be applied to the Chinese National Standard (CNS) A4 specification (210x 297 mm) at this paper size --------'--- * ··· ------- Order --------- (Please read the precautions on the back before filling out this page) 518720 A7 V. Description of the invention () Force 'Therefore, components with copper wires have longer Life and better stability. However, because copper cannot be implanted with traditional dry etching (Dry Etch ^ g) technology, most of the current production of metal wires uses post-mounting method to fill the copper metal to the In the dielectric layer with the pattern of the metal wire. Double fabrication of the dielectric and the completion of the process steps can be performed in the area of lithography first. The larger heavy metal inlay technology is used to synchronize the layer windows when making the trench of the metal wire. Therefore, only one metal filling step is required, and a metal wire and the connecting wire between the metal wires can be simplified. According to the different dry etching methods, the dual metal inlay technology is divided into Trench First. Type, first-etched interlayer window Self-Aligned, etc. Among them, because the photolithography process is far more difficult than the lithography process of trenches, and the way of engraving the interlayer window, the photolithography process of its interlayer window is on a flat surface. Therefore, it is easier to etch the via window first, and it has a Process Window. (Please read the precautions on the back before filling this page) # # --------- line. Ministry of Economy The Intellectual Property Bureau employee consumer cooperative printed farmer may refer to Figures 1 to 5 in May. It is a cross-sectional view showing the manufacturing process of the opening of the conventional double metal inlaid structure. The semiconductor substrate 100 is covered with a thin silicon nitride (ShN4) layer as an etch stop layer 102 for etching the via window, and a dielectric layer 1 is formed on the etch stop layer 102. 4. The material of the dielectric layer 104 may be, for example, a low-dielectric constant material or an ultra-low-dielectric constant paper. The Chinese paper standard (CNS) A4 specification (210 X 297 meals) is applicable. 518720 A7 B7 5. Description of the invention () Number of materials, etc. Then, in order to prevent reflections For the accuracy of photoresist exposure, the dielectric layer 104 is covered with a layer of Dielectric Anti-Reflective Coatings (DARC) 106. When the anti-reflective dielectric coating 106 is formed, the anti-reflective dielectric coating is formed. A photoresist layer 108 having a dielectric window pattern is formed on the substrate 6 and a portion of the anti-reflective dielectric coating layer 6 is exposed to form a structure as shown in FIG. 1. Next, a dry etching method is used, and the photoresist layer 108 is used as an etching mask, and the remaining anti-reflective dielectric coating layer 106 is etched until the exposed portion is etched to terminate the layer 102. A dielectric window 110 is formed in the reflective dielectric cladding layer 106 and the dielectric layer 104, as shown in FIG. After the etching of the interlayer window ηο is completed and the photoresist layer 108 is removed, a few organic material layers Π3 are filled in the interlayer window 丨 丨 〇 to protect the etch stop layer i02 and make the etch stop layer 1 02 In the subsequent trench 1 1 6 (see Figure 4) etching, it will not be penetrated by the etching, thereby avoiding damage to the substrate 100. A deep ultraviolet (DUV) photoresist layer 12 is formed on the anti-reflection dielectric coating 106 and the organic material layer 113, and fills the dielectric window 1 10. At this time, the trench pattern is transferred to the deep ultraviolet photoresist layer 112 by a lithography process, and a part of the anti-reflection dielectric coating layer 106 and the dielectric layer 110 are exposed. Then, the deep ultraviolet photoresist layer 112 in the interlayer window 110 is etched back 'to form a photoresist layer 114 in the interlayer window 110, as shown in FIG. This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) m ϋ If nnn ϋ One 0, · flu nn flu I ϋ n I · Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau 518720 A7 B7 V. Description of the invention () Then, take the deep ultraviolet photoresist layer 丨 12 as the hard cover, and use the plasma to expose the anti-reflective dielectric coating 106 and photoresist Dry etching is performed on the layer 114, and by controlling the dry etching time, trenches n 6 are formed in the anti-reflective dielectric coating 丨 0 6, the dielectric layer 104, and the dielectric window 丨 10, as shown in FIG. Figure 4 shows. Since the deep ultraviolet photoresist constituting the photoresist layer 114 will react with the dielectric layer 104, a base compound is generated at the interface between the photoresist layer 114 and the dielectric layer 104. In addition, when the height of the photoresist layer 114 is too high, it will lead to subsequent exposure steps, and the photoresist layer 4 cannot be exposed to the required depth of the trench 1 1 6. Therefore, after the remaining photoresist layer 1 14, the organic material layer 113, and the deep ultraviolet photoresist layer 112 are removed to form a double metal damascene structure opening 120, the trench η 6 will have a fence shape. The protrusion π 8 is formed as shown in FIG. 5. The fence-like protrusions 1 1 § formed in the trench 1 1 6 will cause the subsequent barrier layer and Electrochemical Plating (£ 0?) ≫ the child product to have poor step coverage ( step Coverage). In addition, when the device is operating, the grid-like protrusions 118 in the trench 116 will cause the electrical instability of the device and reduce the reliability of the device. On the other hand, during the trench 1 1 6 etching, the deep ultraviolet photoresist layer π 2 will be attacked by the plasma at the same time. If the situation is too serious, it will cause the critical dimension (CD) to be improperly enlarged and affect the device. Layout. The purpose and summary of the invention: 5 This paper size applies the Chinese National Standard (CNS) A4 gauge (210 x 297 mm) (Please read the precautions on the back before filling this page)-&u; uin —J inn · I nnnnnn I — I _ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 518720 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention Barrier-shaped protrusions, which lead to larger critical dimensions, reduce the electrical stability of the component, and further seriously affect the reliability of the component. An object of the present invention is to provide a method for manufacturing an opening of a dual metal mosaic structure. After forming a via window, before performing trench etching, under a high reaction pressure, the depth of the hard mask is etched. The ultraviolet photoresist layer is passivated, and a thin polymer layer is formed on the deep ultraviolet photoresist layer and the sidewall. Therefore, during the trench etching, the above-mentioned polymer layer can protect the deep ultraviolet photoresist layer and prevent the deep ultraviolet photoresist layer from being attacked by the electrical system, thereby preventing the critical dimension of the device from being enlarged improperly. Another object of the present invention is to provide a method for manufacturing a double metal embedded structure opening of an interlayer window, which is performed before the trench etching, after the passivation step of the deep ultraviolet photoresist layer is completed, the passivation step is lower than that of the passivation step. The process pressure reduces the photoresist scum (Scum) and part of the photoresist on the sidewalls of the interlayer window to reduce the height of the photoresist in the interlayer window, especially the photoresistance south of the side of the interlayer window. Therefore, the reliability of subsequent trench etching can be increased, and a better trench appearance can be obtained. Another purpose of the present invention is to ensure the quality of trench etching by preventing passivation steps and reduction steps before trench etching, and to prevent grid-like shapes. 6 This paper size applies the Chinese National Standard (CNS) A4 specification (210x 297 mm). ): -------- Order --------- Line c, please read the Zhuyin on the back first? Please fill in this page again for matters) 518720 A7 __— B7 V. Description of the invention () The protrusion is formed in the trench. After the fabrication of the opening of the dual metal damascene structure is completed, the subsequent barrier layer deposition and metal layer deposition can obtain good step coverage. Therefore, the 'component has better electrical stability and quality, and greatly improves the process yield. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above-mentioned purpose, the present invention further provides a method for manufacturing an opening of a double metal inlaid structure, which at least includes providing a substrate in which the substrates are sequentially stacked There is an etch stop layer, a dielectric layer, and an anti-reflective dielectric coating, and a dielectric window is formed in the etch stop layer, the dielectric layer 'and the anti-reflective dielectric coating, and about a part of the exposed window is exposed. Etching stop layer; forming an interlayer window filled with an organic material layer, and the organic material layer covering the exposed etching stop layer; forming a first deep ultraviolet photoresist layer and a second deep ultraviolet photoresist layer The first deep ultraviolet photoresist layer is covered on the organic material layer, and the second deep ultraviolet photoresist layer is covered on the anti-reflective dielectric coating and the first deep ultraviolet photoresist layer. A deep ultraviolet photoresist layer fills the dielectric window; a first etching step is performed to form a trench pattern in the second deep ultraviolet photoresist layer, and a portion of the anti-reflection dielectric coating is exposed. And a first deep ultraviolet photoresist layer; removing a part of the first deep ultraviolet photoresist layer to open a part of the interlayer window, and forming a plurality of photoresist dross on a side wall of the opened interlayer window; A first plasma formed under the first process conditions performs a passivation step on the second deep ultraviolet photoresist layer, and a plurality of polymer films are formed to cover a plurality of surfaces of the second deep ultraviolet photoresist layer. ; Apply the Chinese paper standard (CNS) A4 (210x297, 518720, A7, B7) to the 7th paper size. 5. Description of the invention The second one, the first slag opening of the Qiqiu said that the resistance to the sizing light and electricity, and the two, the first de-sizing of the electricity to the 30% borrow the shape, a step by step reduction process. A piece of dielectric blocking light reflection and anti-reflective materials are described in the deep three-layer dielectric, except for the sudden step and engraving with the surname "'Erqu Digou' in a row to form a screen. The cover layer is hard-covered for electricity. Section. Thin meson of window film layer separates high-quality, complete The layer C and layer of light-blocking material outside the deep purple material C have been and will be etched, and the etched section will be exposed and clearly stated that the single-simplified graphic drawing belongs to the gold column supplemented by the Chinese civilization, and then goes to: The examples will be explained in detail, and the details will be described in detail. The structure of the bracelet will be made of gold and is illustrated by tlSuf. The figure is from the top to the cross-section of the figure. The example of making a pair is better than the actual one. The face of the first figure shows the cutting process. The current drawing shows the opening of the picture 12 to the composition of the composition 6 inlay (please read the precautions on the back before filling this page) 0 Order --------- Rate of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs to print drawing numbers for comparison: 100 substrate 102 etch stop layer 104 dielectric layer 106 anti-reflective dielectric coating 10 8 photoresist layer 110 Interlayer window 112 Deep ultraviolet photoresist layer 113 Organic material layer The paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 518720 A7 B7 V. Description of the invention () 1 14 Photoresist layer 1 16 Ditch 118 fence-like protrusions 120 Opening of double metal mosaic structure 200 Substrate 202 Etching stop layer 204 Dielectric layer 206 Anti-reflective dielectric coating 208 Photoresist layer 210 Interlayer window 212 Organic material layer 214 Photoresist layer 216 Photoresist layer 218 Polymer film 220 Ditch 222 Double metal inlaid knot; Opening of the trench (please read the precautions for back drinking before filling this page) 0 Detailed description of the invention: Order --------- line. The present invention discloses a double metal inlaid structure The manufacturing method of the opening is suitable for the double metal damascene structure process of etching the via window first. After the formation of the via window, the passivation step of the photoresist layer and the reduction step of the photoresist residue on the sidewall of the via window are sequentially performed. To improve the reliability of the trench etching process. In order to make the description of the present invention more detailed and complete, reference may be made to the following descriptions in conjunction with the diagrams of FIGS. 6 to 12. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Please refer to Figures 6 to 12 for a cross-sectional view showing the manufacturing process of the opening of the dual metal inlaid structure according to a preferred embodiment of the present invention. When the method of the present invention is used to manufacture the opening of the double metal mosaic structure, the Chinese national standard (CNS) A4 specification (210 X 297 mm) is first applied to the paper size. 518720 5. Description of the invention (manufacturing eight display: covering on the substrate 200) An etch stop layer 202 is used to accurately control the #etched end point of the two teeth. The material of the ㈣stop layer 2Q2 can be for example / cut. Then, for example, a chemical vapor deposition method is used to cover the dielectric layer 204 on the ㈣. The material of layer 204 is a low dielectric constant material and an ultra-low dielectric constant material. After the dielectric layer 204 is formed, a layer of antireflection dielectric coating 20 is covered on the dielectric | 2.4. In order to prevent the reflection of the surface of the dielectric layer 204 from affecting the accuracy of the photoresist exposure, after the anti-reflective dielectric coating 206, the anti-reflective dielectric coating 206 is first covered with a photoresist layer 208, and then, for example, lithography is used. The process transfers the interlayer window pattern to the photoresist layer 208, and exposes a portion of the anti-reflective dielectric coating layer 206 to form the structure shown in Figure 6. (Please read the precautions on the back first (Fill in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 'Using, for example, an anisotropic dry etching method, the exposed anti-reflective dielectric coating 206 and the underlying dielectric layer 204 are etched with the etch stop layer 202 as an etching end point to form a dielectric. The layer window 21〇 is shown in FIG. 7. Next, an organic material layer 2 1 2 is filled in the bottom of the via 210 to protect the exposed etch stop layer 202 and further protect the underside of the etch stop layer 202. For the substrate 200, the material of the organic material layer 212 may be, for example, resin. Then, a photoresist layer 214 is formed by using a method such as chemical vapor deposition to cover the organic material layer 212 and the anti-reflective dielectric coating 206. And fill the interlayer window 210, wherein the material of the photoresist layer 214 may be, for example, a deep ultraviolet photoresist. Then, for example, a photolithography process is used to transfer the trench pattern to the photoresist layer 214, and the anti-reflection of the exposed portion is about Dielectric 10 This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 g) 518720 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Cover layer 206 and interlayer window 210, and 21 in the interlayer window The photoresist shoulder 2 1 6 is formed during the process; the layer is subjected to the engraving step from the photoresist layer 2 1 6 in 2 10 to remove part of the photoresist layer 216 and open part of the interlayer window 21o. The structure shown in Figure 8 is formed. After the trench pattern is transferred to the photoresist layer 2 1 4, the photoresist layer 214 is passivated with a first plasma formed under the first process conditions, and the photoresist is A polymer film 2 丨 8 is formed on the surface and the sidewall of the layer 2 1 4 to protect the photoresist layer 214, as shown in FIG. 9. By the protection of the polymer thin film 218, the photoresist layer 2 1 4 can be During the subsequent trench etching, the shape of the photoresist layer 2 丨 4 is maintained without being attacked by the plasma used in the etching process, thereby ensuring the critical size. Wherein, the above-mentioned first process conditions include at least controlling the pressure of the first process between about 50 millitorr (mT0rr; mT) and about 550 milltorr; the first electric power is between about 100 watts (Watt; w) and about 1,000 watts; and the type and flow rate of the first reaction gas. The above-mentioned first reaction gas includes at least hydrocarbons (cXHyFZ), carbon monoxide (CO), and nitrogen (N2) 'wherein the flow rate of hydrocarbon compounds is between about 1 standard cubic centimeter per minute (Standard Cubic Centimeters Per Minute') SCCM) to about 20 sccm 'and the flow rate of carbon monoxide is between about 10 sccm to about 200 sccm, while the flow rate of nitrogen is between about 10 sccm to about 100 sccm. During the purification step, the pressure of the first process is maintained at a relatively high pressure, so the polymer can be prevented from being formed in the interlayer window, so that the polymer is only applicable to 11 paper sizes with a trench pattern larger than the interlayer window. China National Standard (CNS) A4 Specification (210 X 297g t) -------- ^ --------- ^ (Please read the precautions on the back before filling this page) Wisdom of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Property Bureau 518720 V. Description of the invention () Photoresist layer 2 1 4 Surface and side wall / in order to facilitate the next step of engraving 0 Then, according to the second process conditions Φ ^ # a ^ 9 1 ^ ^. The first plasma is used to reduce the surface of the photoresist layer 216 of the interlayer window 210 f with the interface between the f1 layer 216 and the side wall of the interlayer window 210, so as to remove the words that are attached to it. The photoresist residue is reduced, and the height of the photoresist layer 216 located on the side of the sidewall of the interlayer window 210 is reduced, and the height of the photoresist layer 216 is further reduced, as shown in FIG. 10. The above-mentioned second process conditions include at least controlling the pressure of the second process to be less than about 60 millitorr; the second power is between about 100 watts and about 1,000 watts; and the second is the type of the gas and its Flow ... The second reaction gas includes at least a * gas, hydrogen (h2), -carbon oxide, and oxygen (〇2), and the flow of the gas is between about 10 sccm to about 100 sccm. Between about 10 sccm to about 500 sccm, the flow rate of carbon monoxide is between about 10 sccm to about 20 sccm, and the flow rate of oxygen is between about 10 sccm to about 20 sccm. Since the second process pressure is controlled at a lower pressure, the second plasma is easier to react in the interlayer window 210, and it is not easy to cause damage to the polymer film 218 and the photoresist layer 214. After the passivation step of the photoresist layer 214 and the photoresist dross reduction step in the interlayer window 210 are completed in order, the trench 220 can be etched. The photoresist layer 2 1 4 and the polymer film 2 1 8 are used as the etching mask. The third plasma formed by the third process condition is used, and the time mode is used to control the etching end point. 12 This paper size applies Chinese national standards ( CNS) A4 specification (210x 297 mm) — — — — — — — — — — ---- I ------- II --- (Please read the precautions on the back before filling this page) 518720 Λ: Β7
經濟部智慧財產局員工消費合作社印製 五、發明說明（） 對暴露之抗反射介電覆層206與其下之介電層204、以及 介層窗210中之光阻層216進行非等向性蝕刻，而在介| 窗210上形成溝渠220，如第1 1圖所示。其中，第三製程 條件至少包括控制第三製程壓力在介於5 0毫托爾至約1 5 Q 毫托爾之間；第三電力在介於100瓦特至約1000瓦特之 間；以及第三反應氣體之種類及其流量。而第三反應氣體 至少包括：碳氟化合物（C X F y )、氮氣、一氧化碳、氧氣、以 及氬氣（A r )，且碳氟化合物之流量介於約 1 0 s c c m至約 lOOsccm之間、氮氣之流量介於約lOsccm至約l〇〇sccm2 間、一氧化碳之流量介於約1 〇 s c c m至約2 0 0 s c c m之間、氧 氣之流量介於約1 seem至約20sccm之間、以及氬氣之流量 介於約5 0 s c c m至約5 0 0 s c c m之間。由於，#刻製程係在較 寬廣之溝渠220區域進行，因此將第三製程壓力控制在較 高壓。 完成溝渠220之蝕刻後，便可將介層窗210中殘餘之 光阻層216、光阻層216下之有機材料層212、高分子薄膜 2 1 8、以及光阻層2 1 4去除，並約暴露出部分之蝕刻終止層 202,而形成由介層窗210以及溝渠220構成之雙重金屬鑲 嵌結構之開口 222，如第12圖所示之結構。藉由溝渠220 蝕刻前所依序進行之鈍化步驟以及介層窗中光阻渣滓之消 減步驟，所形成之雙重金屬鑲嵌結構之開口 222中，並無 形成如同習知技術中所產生之柵欄狀突起。此外，光阻層 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) irij!!#--------訂---------線· Γ请先閱讀背面之注意事項再填寫本頁) 518720 A7 —------__B7 五、發明說明（） ^ 214也因為有純介 坪化步驟所產生之高分子薄膜2丨8的保 而能確保關鍵尺寸。 & 本發月之優點就是在提供一種雙重金屬鑲嵌結構之 開口的製造方法’藉由在介層窗形成後，進行溝渠姓刻前， 對具有溝渠圖案之深紫外光光阻層所進行的純化步驟，而 在深紫外光光阻層上以及側壁形成保護之高分子薄膜。因 此’當進行溝渠之乾式姓刻時，可保護深紫外光光阻層， 使其不致遭受電激攻擊，進而維持元件之ιί鍵尺寸。s 本發明之另一優點就是在提供一種先蝕刻介層窗之雙 重金属鑲嵌結構的製程’其係在深紫外光光阻層之純化步 驟完成後’隨即進行介層窗側壁上之光阻渣滓的消減二 驟’以減少殘留在介層窗側壁上之光阻，而達到降低介層 窗側壁旁的光阻高度。因此，可提高溝渠蝕刻的成功率， 並獲得較佳之溝渠外型。 本發明之再一優點就是因為藉由溝渠蝕刻前所進行之 鈍化步驟以及消減步驟，可提升溝渠蝕刻製程之品質，而 達到防止柵欄狀突起在溝渠中形成的目的。在雙重°金屬鑲 嵌結構之開口製作完成後，後續所進行之阻障層沉積以及 金屬層沉積，皆具有良好的階梯覆蓋。因此，運用本發明 可提高元件之電性穩定度與品質，進而獲得較高之製程良 14 本紙張尺度過用中國國家標準（CNSM4規g (210 X 297公餐) -----—— (請先¾讀背面之注意事項再填寫本頁) 0 0 I I I I I n n^OJ· n 1« n n 經濟部智慧財產局員工消費合作社印製 518720 A： _B7___ 五、發明說明（） 率〇 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；·凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 Γ ^ . n ϋ ϋ i·! n If ϋ n n n · flu n n .11 I i9 n 】fJ· n n n I n n n I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t )Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention () Anisotropy of the exposed anti-reflective dielectric coating 206 and the underlying dielectric layer 204 and the photoresist layer 216 in the dielectric window 210 Etching, and a trench 220 is formed on the window 210, as shown in FIG. 11. Among them, the third process condition includes at least controlling the pressure of the third process between 50 mTorr and about 15 Q mTorr; the third power is between 100 watts and about 1000 watts; and the third The type of reactive gas and its flow rate. The third reaction gas includes at least: fluorocarbon (CXF y), nitrogen, carbon monoxide, oxygen, and argon (A r), and the flow rate of the fluorocarbon is between about 10 sccm to about 100 sccm. The flow rate is between about 10 sccm to about 100 sccm2, the flow rate of carbon monoxide is between about 10 sccm to about 200 sccm, the flow rate of oxygen is between about 1 seem to about 20 sccm, and the flow rate of argon Between about 50 sccm to about 50 sccm. Since the #etching process is performed in a wider area of the trench 220, the pressure of the third process is controlled at a relatively high pressure. After the trench 220 is etched, the photoresist layer 216 remaining in the interlayer window 210, the organic material layer 212 under the photoresist layer 216, the polymer film 2 1 8 and the photoresist layer 2 1 4 can be removed, and A portion of the etch stop layer 202 is exposed, and an opening 222 of a double metal damascene structure composed of the via window 210 and the trench 220 is formed, as shown in FIG. 12. Through the passivation step sequentially performed before the trench 220 is etched and the photoresist dross reduction step in the via window, the opening 222 of the double metal mosaic structure formed does not form a fence-like shape as produced in the conventional technology. Bulge. In addition, the photoresist layer 13 paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male t) irij !! # -------- Order --------- line · Γ Please read the precautions on the back before filling in this page) 518720 A7 —--------__ B7 V. Description of the invention () ^ 214 is also because of the polymer film 2 丨 8 produced by the pure interfacialization step. Ensures critical dimensions. & The advantage of this month is to provide a method for manufacturing the opening of the double metal inlaid structure, which is performed on the deep ultraviolet photoresist layer with a trench pattern after the formation of the interlayer window and before the trench engraving. A purification step, and a protected polymer film is formed on the deep ultraviolet photoresist layer and the sidewall. Therefore, when the dry-type engraving of the trench is performed, the deep ultraviolet photoresist layer can be protected from electric shock, and the key size of the component can be maintained. s Another advantage of the present invention is to provide a process of first etching the double metal damascene structure of the interlayer window, which is performed after the purification step of the deep ultraviolet photoresist layer is completed, and then the photoresist residue on the side wall of the interlayer window is performed. The second step of reduction is to reduce the photoresist remaining on the side wall of the interlayer window, so as to reduce the height of the photoresist near the side wall of the interlayer window. Therefore, the success rate of trench etching can be improved, and a better trench appearance can be obtained. Another advantage of the present invention is that the quality of the trench etching process can be improved by the passivation step and the reduction step performed before the trench etching, and the purpose of preventing the formation of the fence-like protrusions in the trench is achieved. After the fabrication of the opening of the double-degree metal embedded structure, the subsequent barrier layer deposition and metal layer deposition have good step coverage. Therefore, the use of the present invention can improve the electrical stability and quality of the components, and thus obtain a high process quality. 14 Paper standards have been used in accordance with Chinese national standards (CNSM4 regulations g (210 X 297 meals) --------- (Please read the notes on the back before filling in this page) 0 0 IIIII nn ^ OJ · n 1 «nn Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 518720 A: _B7___ V. Description of the invention () Rate 〇 If you are familiar with this Those skilled in the art understand that the above is only a preferred embodiment of the present invention and is not intended to limit the scope of patent application of the present invention; any other equivalent changes made without departing from the spirit disclosed by the present invention Or modification should be included in the scope of patent application below. Γ ^. N ϋ ϋ i ·! N If ϋ nnn · flu nn .11 I i9 n】 fJ · nnn I nnn I (Please read the notes on the back first (Fill in this page again.) Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 g).