516152 0 A7 B7 五、發明説明（ 【創作領域】 本發明是有關於一種晶圓邊界的搜尋方法，特別是指 —種可精確地自動搜尋晶圓邊界之尋找晶圓邊界的方法。 【習知技藝說明】 按，台灣現已是世界晶圓代工的重鎮，然，隨著全球 化競爭的日趨劇烈，如何以最有效率的方式將產品完成並 送至客戶手中已成為一相當重要的課題。 習知一種晶圓切割機100，如第一、二、三圖所示， 該切割機100具有一可沿X軸方向左右移動，且可繞Z軸 方向自轉的切割工作台1，以供置放一晶圓（該晶圓是為 一破片晶圓101 )、一組可同步沿γ軸方向前後移動的刀 輛2及攝影機3，且該刀軸2可獨自地沿z軸方向上下移 動，並設有一刀片20 1、一可操控驅動該切割工作台1、該 刀軸2及該攝影機3的中央處理器* ,及一與該中央處理 器4連結的顯示器5，且該攝影機3與該中央處理器4之 間更依序設有一類比/數位轉換器4〇1、一影像記憶裝置 402 〇 藉此，操作者可利用該晶圓切割機100自動切割對正 後的該破片晶圓101，請再參閱第四圖，但，因該破片晶 圓ΗΠ是呈不規則的形狀，所以’操作者—二 整晶圓的方式’切割該破片晶圓101，而必須在切割該破 片晶圓m前’先以人工的方式量測該破片晶圓ι〇ι的切 割參考尺寸L 1、L2，並將該切割參者 可尺寸LI、L2輸入該 晶圓切割機1 〇〇的中央處理器4，以傲 _______________ _ 乂做為該破片晶圓101 參纸張尺度適用中國國家標準（CNS ) A4規格（210》297公釐） 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 516152 A7 B7 五、發明説明（2 ) 的假想切割邊界。誠然，利用此種人工量測方式可設定該 破片晶圓1 〇 1的假想切割邊界，但，此種人工量測方式在 實際操作上卻具有以下之缺失： (請先閲讀背面之注意事項再填寫本頁) 一、操作者為了避免漏切該破片晶圓1 0 1，該切割參考 尺寸L 1、L2，>通常是抓取比該破片晶圓i 〇丨實際尺寸更大 的數值’如此，往往會造成該刀片201產生過度的空切， 徒然浪費許多時間於無效的切割上，當單位晶片尺寸愈小 (如〇.2mm X 〇.2mm之LED晶片），空切愈費時，因而 嚴重地影響整體的生產效率。 二、因為每一破片晶圓的形狀、大小皆不盡相同，故， 操作者於每次切割時，必須一再量測每一破片晶圓的切割 ί考尺寸，並一再更改该晶圓切割機的輸入設定，如 此，不僅麻煩’亦會對生產效率造成影響。 【創作概要】 因此，本發明之目的，即在於提供一種精確，且可自 動搜尋晶圓邊界之尋找晶圓邊界的方法。 經濟部智慧財產局員工消費合作社印製 於是，本發明之尋找晶圓邊界的方法，該方法是運用 於一切割機，該切割機具有-可沿X軸方向左右移動，且 可繞ζ財向自轉的切割工作台，則共置放一待切割工 件、、且可同步沿γ轴方向前後移動的刀轴及攝影機，且 該刀軸可獨自地沿Ζ軸方向上下移動、一可操控驅動該切 J作口 "亥刀軸及該攝影機的中央處理器，及一與該中 ^處理器連結的顯示器，且置放於該切割工作台之該待切 L二,]件土，形成有多^與該巾央處理ϋ藉該攝影機預先攝 本紙張尺度 (CNS) 五、發明説明 且可切割分離的單位晶 且呈陣列式排列，每一 在該等切割方向上每一 而當該待切割工件置於 下儲存之-f樣本晶片完全相同 片，該等單位晶片均為相同形狀 單位晶片均具有至少二切割方向 單位晶片均各定義有—切割距離 該切割工作台上，且以調整該切二：：：：直於 々，故—# 』丄作口及该攝影機的方 式，將该待切割工件 杏 1万 可以該方法尋找^ 副該待切割工件前， 驟：一、：找5亥待切割工件的邊界，該方法包含以下步 起 I亥待切割工件之其中一單位晶片的中心點為一 & 口 ^點。二、將由該起始搜尋點沿Y軸方向向上平移 一參考：寸之處定義為-上邊界點，對應該上邊界點，該 起始搜寸點可定義為一下二 一 將该上、下邊界點 之Y軸方向座標的平均值，除以該待切割工件與¥轴方向 平行之—第一切割方向的一第一切割距離，並取整數，再 將該整數乘以該第一切割距離，可得到一 γ軸方向新座 標，該γ軸方向新座標可定義為—第二搜尋點。四、將該 攝影機平移至該第二搜尋點，拍攝存取該待切割工件於該 處的影像，並與該母樣本晶片進行影像比對，若影像比對 符合’該第二搜尋點的座標則定義為該下邊界點，並與步 驟三之該上邊界點相減取絕對值；若影像比對不符合，該 第二搜尋點的座標則定義為該上邊界點，並與步驟三之該 下邊界點相減取絕對值。五、重覆遞迴步驟三、步驟四， 直至該上、下邊界點相減之絕對值小於一設定公差，則該 上、下邊界點互相逼近之處可定義為一第三搜尋點。六、 將該第三搜尋點沿X軸方向向右平移一水平參考距離之處 適用中國國家標準（CNS ) Α4規格（210：|2957γ 516152 五、發明説明（ 定義為-第：搜尋點，該水平參考距 盘X 古Α τ 專於5亥待切割工件 與X軸方向平行之一第二切割方向的件 數倍長度。七、將哕搖弟一切吾彳距離的整 將該攝衫機平移至該第四搜尋點， 取該待切割工件y | Μ 、攝存 1干於该處的衫像，並與該母 像比對，若影像比對符合，列將 曰曰片進仃影 向上平移-垂直參考距離至_第五搜尋點轴方向 丨離等於該第-切割距離的整數 ‘―直茶考距 項 再 的座俨么長度，並將該第五搜尋點 # 為該第四搜尋點；若影像比對不符合，則將該 訂 經濟部智慧財產局員工消費合作社印製 弟四搜+點沿X軸方向向右平移該水平參考距離至丄 搜尋點，並將該第六搜尋點的座標定義為該第四搜尋 八、重覆進行步驟七，直至該四搜尋點連續沿方向向 右平移該水平參考距離至該第六搜尋點的次數，大於—預 設參數’並將該第四搜尋點連續向右平移的起始座標定義 為-第七搜尋點。九、將該第七搜尋點沿χ軸方向向左平 移該水平參考距離之處定義為一第八搜尋點。十、將該攝 影機平移至該第八搜尋點，拍攝存取該肖切割工件於該處 的影像，並與該母樣本晶片進行影像比對，若影像比對符 合，則將該第八搜尋點沿？軸方向向上平移該垂直參考距 離至-第九搜尋點’並將該第九搜尋點的座標定義為該第 八搜尋點；若影像比對不符合，則將該第八搜尋點沿X軸 方向向左平移該水平參考距離至一第十搜尋點，並將該第 十搜尋點的座標定義為該第八搜尋點。十一、重覆進行步 驟十，直至該八搜尋點連續沿X軸方向向左平移該水平參 考距離至該第十搜尋點的次數，大於該預設參數，並將該 本紙張晒緖準（CNS [μ祕（公釐） 516152 經 濟- 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 --—___________ B7 五^發明説明（5 ) 第八搜尋點連續向左平移的起始座標 、获4一弟十_搜尋 點，該第十一搜尋點即為該待切割工 仟在其第一切割方向 上的一絕對上邊界點。 【圖式之簡單說明】 本發明之其他特徵及優點，在以下配合參考圖式之較 佳實施例的詳細說明中，將可清楚的明白，在圖式中. 第-圖是習知一種晶圓切割機之立體外觀示意圖： 第二圖是該種切割機拆除一外部殼體後的立體示音 圖； 心、 第三圖是該種切割機之系統連結示意圖； 第四圖疋一破片晶圓置放於一切割工作台上，且經對 正後的平面示意圖； 第五圖是該種切割機之一視窗顯示一置放於該切割工 作台上之母片晶圓的影像，並建立一母樣本晶片的局部平 面示意圖； 第六圖是另一破片晶圓未對正前置放於該切割工作台 上的平面示意圖； 第七圖是該破片晶圓採樣之平面示意圖； 第八圖是該破片晶圓自動對正示意圖； 第九圖是該破片晶圓之自動對正完成示意圖； 第十圖是本發明之尋找晶圓邊界的方法的一較佳實施 例的流程圖； 第十—圖是該較佳實施例之上邊界搜尋示意圖（—）； 弟十—圖是該較佳實 施例 界搜尋示 ); I 裝-- (請先閱讀背面之注意事項再填寫本頁) -訂- -線- 適用中國國家榡準(CNS ) 516152 A7 B7 五、發明説明（6 ) 第十三圖是該較佳實 第十四圖是該較佳實 第十五圖是該較佳實 第十六圖是該較佳實 第十七圖是該較佳實 第十八圖是該較佳實 弟十九圖是該較佳實 第二十圖是該較佳實 第二Η—圖是該較佳 施例之上邊 施例之上邊 施例之上邊 施例之上邊 施例之上邊 施例之上邊 施例之上邊 施例之上邊 實施例之上 界搜尋示 界搜尋示 界搜尋示 界搜尋示 界搜尋示 界搜尋示 界搜尋示 界搜尋示 邊界搜尋 意圖（三） 意圖（四） 意圖（五） 意圖（六） 意圖（七） 意圖（八） 意圖（九） 意圖（十） 示意圖（十 (請先閱讀背面之注意事項再填寫本頁) 一）； 第二十二圖是該較佳實施例之上邊界搜尋示意圖（十 訂 經 濟 部 智 慧 財 產 局 消 費 合 作 社 印 製 該切割機100搭配使用，且在本實施例中，是先進行 晶 第二十三圖是該較佳實施例之上邊界搜尋完成示意 圖； 第二十四圖是該較佳實施例之上、下、左、右邊界搜 尋完成示意圖；及 第二十五圖是該切割工作台上置放有多片破片晶圓的 平面示意圖。 【較佳實施例之詳細說明】 本發明之哥找晶圓邊界的方法的一較佳實施例，是與 圓自動對正程序，然後再進行本發明之方法的步驟，作 並不拘限本發明之應用範圍，在此特予陳明。 請參閱第五圖，該晶圓自動對正程序之前置作業是先 本紙張尺度制家縣（CNS) 潑516152 0 A7 B7 V. Description of the Invention ([Creative Field] The present invention relates to a method for searching for wafer boundaries, in particular, a method for finding wafer boundaries that can automatically and accurately search for wafer boundaries. [Knowledge Technical Description] According to Taiwan, Taiwan is now the world's major foundry. However, with the increasingly fierce global competition, how to complete and deliver products to customers in the most efficient way has become a very important issue. A wafer cutting machine 100 is known. As shown in the first, second, and third figures, the cutting machine 100 has a cutting table 1 that can move left and right along the X-axis direction and can rotate about the Z-axis direction. Place a wafer (the wafer is a broken wafer 101), a set of knife 2 and camera 3 that can move back and forth along the γ axis synchronously, and the knife axis 2 can move up and down along the z axis alone And a blade 20 1, a central processing unit capable of driving the cutting table 1, the knife shaft 2 and the camera 3, and a display 5 connected to the central processor 4, and the camera 3 and The CPU 4 is more dependent There is an analog / digital converter 401, an image memory device 402. Through this, the operator can use the wafer dicing machine 100 to automatically cut and align the broken wafer 101. Please refer to the fourth figure again, but Because the broken wafer ΗΠ has an irregular shape, the 'operator-two-wafer method' cuts the broken wafer 101, and it must be measured manually before cutting the broken wafer m '. Measure the cutting reference dimensions L1 and L2 of the broken wafer ιι, and enter the cutting participant dimensions LI and L2 into the central processing unit 4 of the wafer dicing machine 1000 to do ______ Applicable to the Chinese standard (CNS) A4 specification (210 "297 mm) for this broken wafer 101 reference paper gutter. (Please read the precautions on the back before filling this page.) System 516152 A7 B7 V. The imaginary cutting boundary of the description of the invention (2). It is true that this artificial measurement method can be used to set the imaginary cutting boundary of the broken wafer 101. However, this manual measurement method is in actual operation. But has the following Missing: (Please read the precautions on the back before filling in this page) 1. In order to avoid miss cutting the broken wafer 1 0, the cutting reference dimensions L 1, L2, > are usually grasped more than the broken wafer The larger the value of the wafer i 〇 丨 ', the larger the actual size of the blade 201 is, which often results in excessive air cutting, and wastes a lot of time on invalid cutting. When the unit wafer size is smaller (such as 0.2mm X 〇. 2mm LED chip), the more time-consuming air cutting, which seriously affects the overall production efficiency. 2. Because the shape and size of each broken wafer are not the same, the operator must repeat the measurement every time Measure the cutting size of each broken wafer, and change the input settings of the wafer dicing machine repeatedly. In this way, it is not only troublesome but also affects production efficiency. [Creation Summary] Therefore, an object of the present invention is to provide a method for finding a wafer boundary that is accurate and can automatically search for a wafer boundary. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, the method for finding a wafer boundary according to the present invention is applied to a cutting machine, which has-can move left and right along the X axis direction, and can rotate around the zeta direction The rotating cutting table has a cutter shaft and a camera that can be moved back and forth along the γ-axis direction simultaneously, and the cutter shaft can move up and down along the Z-axis direction alone. Cut the cutting edge of the knife, the central processing unit of the camera, and a display connected to the central processing unit, and place the piece of soil to be cut on the cutting table, and then form a piece of soil to form Do more with the towel center. Take the camera to pre-photograph this paper scale (CNS). 5. The unit crystals described in the invention can be cut and separated and arranged in an array. Each one should be treated in the cutting direction. The -f sample wafer stored under the cutting workpiece is exactly the same piece. The unit wafers are all the same shape. The unit wafers have at least two cutting directions. The unit wafers are each defined-the cutting distance is on the cutting table, and To cut two :::: Straight to 々, so — # 『丄 is the mouth and the way of the camera, you can find the workpiece to be cut 10,000 in this way ^ Before the workpiece to be cut, step: one ,: To find the boundary of the workpiece to be cut, the method includes the following steps. The center point of one of the unit wafers of the workpiece to be cut is one & point. Second, the starting search point is translated upward along the Y-axis direction for a reference: the inch position is defined as-the upper boundary point, corresponding to the upper boundary point, the starting search point can be defined as the following two one The average value of the Y-axis coordinates of the boundary point is divided by a first cutting distance parallel to the ¥ -axis direction of the workpiece to be cut—the first cutting direction, and an integer is taken, and then the integer is multiplied by the first cutting distance , A new coordinate in the γ-axis direction can be obtained, and the new coordinate in the γ-axis direction can be defined as a second search point. 4. Pan the camera to the second search point, capture and access the image of the workpiece to be cut there, and perform an image comparison with the mother sample wafer. If the image comparison matches the coordinates of the second search point Is defined as the lower boundary point and subtracted from the upper boundary point of step 3 to take an absolute value; if the image comparison does not match, the coordinate of the second search point is defined as the upper boundary point and is the same as that of step 3 This lower boundary point is subtracted to take the absolute value. 5. Repeat step 3 and step 4 repeatedly until the absolute value of the subtraction of the upper and lower boundary points is less than a set tolerance, then the approaching point of the upper and lower boundary points can be defined as a third search point. 6. The third search point is translated to the right along the X axis by a horizontal reference distance to the applicable Chinese National Standard (CNS) A4 specification (210: | 2957γ 516152. 5. Description of the invention (defined as-the first: search point, the Horizontal reference distance plate X Gu Α τ Specialized for the length of the workpiece in the second cutting direction which is parallel to the X-axis direction. The length of the workpiece is several times the length of the camera. Up to the fourth search point, take the shirt image y | Μ and capture 1 of the shirt image dried there, and compare it with the mother image. If the image comparison matches, the column will be said to enter the film upward. Pan-vertical reference distance to _ fifth search point axis direction distance from the integer equal to the -cut distance '-the length of the seat of the straight tea test distance item, and the fifth search point # is the fourth search If the image comparison does not match, then print the order four points + the point along the X axis to the right of the horizontal search distance to the ， search point and print the sixth search The coordinates of the point are defined as the fourth search step. Seven, the number of times the horizontal reference distance is continuously shifted to the right in the direction to the sixth search point up to the fourth search point is greater than -the preset parameter 'and the starting coordinate of the fourth search point to be continuously shifted to the right is defined as- The seventh search point. 9. The eighth search point is defined as a place where the seventh search point is shifted to the left along the horizontal direction by the horizontal reference distance. 10. The camera is panned to the eighth search point for shooting access. The Shaw cuts the image of the workpiece there, and performs an image comparison with the mother sample wafer. If the image comparison matches, then the eighth search point is translated up to the ninth search point along the? Axis direction. 'And define the coordinates of the ninth search point as the eighth search point; if the image comparison does not match, then shift the eighth search point to the left along the X axis direction by the horizontal reference distance to a tenth search point, The coordinate of the tenth search point is defined as the eighth search point. 11. Repeat step 10 until the eight search points are continuously translated leftward along the X-axis direction from the horizontal reference distance to the tenth search point. Times, greater than Preset the parameters and print this paper accurately (CNS [μ 秘 （MM） 516152 Economy-Ministry Intellectual Property Bureau Employee Consumption Cooperative Printed A7 ---___________ B7 5) Description of Invention (5) Eighth Search Point The starting coordinates of the continuous translation to the left are obtained by the four search points. The eleventh search point is an absolute upper boundary point of the to-be-cut worker in its first cutting direction. [Schematic simplicity Description] Other features and advantages of the present invention will be clearly understood in the following detailed description of the preferred embodiment with reference to the drawings, in the drawings. Figure-Figure is a three-dimensional view of a conventional wafer cutting machine Appearance diagram: The second picture is a three-dimensional sound diagram of the cutting machine after removing an outer casing; the heart and the third picture are the system connection diagrams of the cutting machine; the fourth picture is a fragmented wafer placed in a A schematic plan view of the cutting workbench after alignment; the fifth figure is a window of one of the cutting machines showing an image of a mother wafer placed on the cutting workbench and creating a mother sample wafer Partial plan view Figure 6 is a schematic plan view of another broken wafer placed on the cutting table without being aligned in front; Figure 7 is a schematic plan view of the broken wafer sampling; Figure 8 is a schematic illustration of the automatic alignment of the broken wafer Figure 9 is a schematic diagram of the automatic alignment of the broken wafer; Figure 10 is a flowchart of a preferred embodiment of the method for finding a wafer boundary of the present invention; Figure 10 is a diagram of the preferred embodiment Upper boundary search diagram (—); Brother X—picture is the boundary search of the preferred embodiment); I installed-(Please read the precautions on the back before filling this page) -Order--Line-Applicable to Chinese countries 榡Standard (CNS) 516152 A7 B7 V. Description of the invention (6) The thirteenth figure is the preferred reality The fourteenth figure is the preferred reality The fifteenth figure is the preferred reality The sixteenth figure is the preferred reality The seventeenth figure is the better reality. The eighteenth figure is the better reality. The nineteenth figure is the better reality. The twentyth figure is the better reality. The second figure is the top application of the preferred embodiment. Example above Example above Example above Example above Example above Example above Example above Example above Example Upper Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Boundary Search Intent (3) Intent (4) Intent (5) Intent (6) Intent (7) Intention (8) Intention (9) Intention (10) Schematic diagram (ten (please read the notes on the back before filling out this page) one); the twenty-second diagram is the schematic diagram of the upper boundary search of the preferred embodiment (ten orders) The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the cutting machine 100 for use, and in this embodiment, the crystal is first performed. Figure 23 is a schematic diagram of the upper boundary search completion of the preferred embodiment. Figure 24. It is a schematic diagram of the search of the upper, lower, left, and right boundaries of the preferred embodiment; and FIG. 25 is a schematic plan view of a plurality of broken wafers placed on the cutting table. [Detailed description of the preferred embodiment] A preferred embodiment of the method of the present invention for finding the wafer boundary is an automatic alignment procedure with a circle, and then the steps of the method of the present invention are performed, and the present invention is not limited to this. The scope of application is hereby given to Chen Ming. Please refer to the fifth figure. The wafer pre-alignment procedure is pre-set in the paper-scale manufacturer's county (CNS).
經濟部智慧財產局員工消費合作社印製 516152 一— ———.— 五、發明説明（7 / 將-母片晶圓1〇置於該切割工作台〗上，則該母片晶圓 :。的影像可由該攝影機3之一鏡頭3〇1，經該類比/數位轉 換器州、該影像記憶裝置4G2,及該中央處理器4，而於 该顯示器5之一視窗501中顯示，且該母片晶圓1〇上形成 ^數可切割分離的單位晶片U.’該等單位晶片U均且 有—第一切割方向y及一第二切割方向χ，並呈陣列式排 列’且彼此間均間隔有一切割道12，在該第一、第二切割 方向Υ、Χ上每一單位晶片11均各定義有-第-切割距離 叫及一第二切割距離D2 (該 、系弟（弟一）切割距離D1 等於該單位晶片i i的寬度（ 12的寬幻，且令第…切割這 分別等〜 &㈣㈣IDW長度是 ,、任一早位晶片11之中心點間距D3、D4的長度， 而當操作者以目視該顯示器5之視窗5〇1，並配合手動又調 整该切割工作台1及該攝影機3的方式，將該母片晶圓10 對正後’該攝影機3可將該母片晶圓1〇上 11的影像攝下儲存’並將其定義為一母樣本晶片13, 如此’即完成該晶圓自動對正程序之前置作業，則當要對 與該母片晶圓10相同規格之破片晶圓20時，:可以 該晶圓自動對正程序加以自動對正，該晶圓自動對正程序 包含以下步驟： 一、歸零：請參閱第六圖，該中央處理器4會將放置 有與該母片晶圓10相同規格之該破片晶圓20 (該破片晶 圓20之每一單位晶片2 1均與該單位晶片11同尺寸，且具 有相同的第一、第二切割方向y 、x及第一、第二切割距 I---------批衣------、玎------^ (請先閱讀背面之注意事項再填寫本頁) 516152 五、發明説明（8 ) 離m、D2)的該切割工作台！及該攝影機3驅動調整至 一原點，使該攝影機3的鏡頭3 01可你於# 』位於该切割工作台1 的上方。 二、 採樣：請參閱第七圖’該中央處理器4透過該攝 影機3之鏡頭3〇1拍攝存取該破片晶圓2〇的影像，並騎 母樣本晶片13進行影像比對，從而選取出舆該母樣本晶片 符合之單位晶片，並將其各定義為一 卞樣本，本實施例 中採得三個完整的子樣本22、23、24，且記錄其中心點座 標值，此外，在此步驟若無法選取到至少二個子樣本（例 如在該破片晶圓20邊界），該中央處理器4會驅動該切割 工作台1沿X軸方向平移，及驅動該攝影機3沿γ軸方向 平移，以使該攝影冑3可拍攝到至少二個子樣本的影像。 三、 計算間距：請參閱第七圖，該中央處理器4會分 別計算任二子樣本22及23、23及24、22及Μ之中心點 間的間距SI、S2、S3。 四、 計算間距餘數：該中央處理器4是將任二子樣本 22及23、23及24、22及24的間距S1、s2、s3，先對該 第一切割方向X的第二切割距離D2取餘數，餘數最小者 表示該組子樣本是同樣地位於該第二切割方向X上。 五、 判斷並選取餘數最小的其中一組子樣本：由第五、 七圖可知，該二子樣本23、24之中心點間的間距S2是幾 乎等於任二單位晶片丨i之中心點間距D4 (考慮製造誤差 及浮點運算的誤差），且該中心點間距D4是等於該第二 切割距離D2,故，該二子樣本23、24的間距％對該切割 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇><297公釐） 第10 f (請先閱讀背面之注意事項再填寫本頁) %------、玎 經濟部智慧財產局員工消費合作社印製 516152 經t部智慧財產局員工消費合作社印製 五、發明説明（v 距離D2所ί的餘數將為 4令即，δ亥中央處理器4合 取選該二子樣本23、24為H @ ^ , 曰 斗马餘數取小的一組子樣本，此外， 若在此步驟所取到的餘齡早 7铢數疋大於一預設的公差值，即表示 該破片晶圓2〇與該母片晶圓1Q規格不同，是誤放於該切、 割工作台1上’則該中央處理器4會立即停止後續步驟的 進行，並發出錯誤訊息。 /、、由步驟四、五可知 J夫口亥組子樣本23、24是同樣地位 於該第二切割方向χ 枝 %參閱第八圖，則該中央處理器 4會驅動該切割工作台 σ 忭口 1以其台面中心點（x〇，y〇)為迴轉 中。點、Z輛方向轉動，使該組子樣本23、24之第二 切割方向X轉動至一水平線上。 一 七、最後，請參閱第九圖，該中央處理器4會再驅動 該切割工作台1沿X細古亚 方向千移’及驅動該攝影機3沿Y 軸方向平移，以使該視窗 < & δ己5 02的中心點調整 移動至其中-單位晶片21的中心點處。 如此，藉由上述步驟，可使該破片晶圓2〇完成自動對 正的動作’然後’即可以本發明之方法為該破片晶圓20 寻㈣界：請配合參閱第十圖，該方法包含以下步驟： 一、請參閱第十-圖’該中央處理器4以該破片晶圓 2 〇之其中一單/(立曰Η 〇 1 , 早4日日片21的中心點為一起始搜尋點（χι， yi )。 一、請參閱第十-圖，該中央處理器4將由該起始搜 尋點（父^)沿丫轴方向向上平移一參考尺寸r(該參考 尺寸R可採用該母片晶圓10二分之_的實際尺寸）之處 請 先 閱 讀 背 注 意 事 項 再 填 寫 本 頁 裝 訂 線 $張尺度適用? 第11頁 516152 _____B7 五、發明説明（l〇) 定義為-上邊界點（Xup，yup)’對應該上邊界點（xup，h)， 該起始搜尋點（XI，yi )可定義為一下邊 1 運介點（Xdown，yd〇Wn )。 三、 請參閱第十一圖，該中央處 丁六蜒理裔4將該上、下邊 界點(X UP 5 y up ) 、( Xd。wn，y d。wn )夕 v 丄 ^ Y釉方向座標的平均 值，除以該破片晶圓20與Y軸方向芈广—斗… 乃问十仃之該第一切割方 向y的第一切割距離D1，並取整赵，五竹#…& a %正数，再將該整數乘以該第 一切割距離D 1，可得到一 γ軸方内虹—此 于j 釉方向新座標，該Y軸方向 新座標可定義為一第二搜尋點（X2，y2)。 四、 請參閱第十二圖，該中央處理器4會將該攝影機 3平移至該第二搜尋點（η，y〇，拍攝存取該破片晶圓汕 於該第二搜尋點（X2, y〇的影像，並與該母樣本晶片13 進行影像比對。若影像比對符合，該第二搜尋點（X2, ^) 的座私則疋義為該下邊界點（XdQwn，yd_n )，並與步驟三 之該上邊界點（Xup，yup )相減取絕對值；若影像比對不符 合，該第二搜尋點（Μ，的座標則定義為該上邊界點（Xup， Υ11Ρ)，並與步驟三之該下邊界點（Xci。％ yciown)相減取絕 對值。而由第十二圖中可知，該第二搜尋點（Ν' P )處之 單位晶片2 1的影像是與該母樣本晶片1 3的影像符合，故 该第二搜尋點（X2, y2 )的座標是定義為該下邊界點（ y^wn)，並與步驟三之該上邊界點（Xup，yup)相減取絕對 值。 五、 請參閱第十三圖，經由重覆遞迴步驟三、步驟四， 直至該上、下邊界點（Xup，yup) 、（XdQwn，ydQwn)相減之 絶對值小於一設定公差T (在本實施例中該設定公差T等 本紙張尺度適用中關家標準（CNS) Α4規格（21GX297 第12 # ϋϋ' 111 n-m _AI ^rlr— ·ϋ^— m·· i..·—·. ϋ (請先閱讀背面之注意事項再填寫本頁) -訂 經濟部智慧財產局員工消費合作社印製 經济部智慧財產局員工消費合作社印製 516152 五、發明説明（li ) 於兩倍該第-切割距離D1的長度），則互相逼近之該上、 下邊界點（Xup，yup)、（Xd〇wn，yd〇wn)的其中之一可定義 為一第三搜尋點（X3，y3 )，在太命Α ^ )在本貝^例中是將該下邊界點 (Xd〇wn，yd〇wn)定義為該第三搜尋點（X3 y3) 六、 請參閱第十四圖，該中本# 口 豕τ央處理器4將該第三搜尋 點（Χ3, y3 )，沿X軸方向向右平 ^ 水平參考距離Η之 處’定義為-第四搜尋點（X4，y〇，該水平參考距離Η 4於該破片晶圓2〇與方向平行之該第二切割方向X 的第二切割距離D2的一倍長度。 七、 請參閱第十五圖，該中央處 處理裔4會將該攝影機 3平移至該第四搜尋點（& ) ，7 )拍攝存取該破片晶圓20 於该弟四搜尋點（X4 y4 )的寻彡禮 、， 的〜像，亚與該母樣本晶片13 進行影像比對。若影像比對符合， 丁仃口則將该第四搜尋點（X4, y〇沿γ軸方向向上平移一垂直參 1此雖v至一第五搜尋 點（％ y5)，該垂直參考距離v等 寸％ "哀弟一切割距離D 1 的一倍長度，並將該第五搜尋點（ ^ ”、 （ ，y5)的座標定義為該 第四搜尋點（X4 y4 );若影 ^ 〜像比對不符合，則將該第四搜 哥點（X4，y4 )沿X軸方向仓士 平由万向向右千移該水平參考距離h至 一第六搜尋點（X6, y6 )，並將該 不/、仅+點（X6，y6 )的 座標定義為該第四搜尋點 +點（X4，y4)。而由第十五、十六圖 中可知，該第四搜尋點（x )處 ，y彡處之衫像與該母樣本晶片 13的影像並不符合，故，該 甲兴慝理态4將該第四搜尋點 (X4’ y4)沿X軸方向向右平移該 砂必不十參考距離Η至該第 六搜尋點（X6, y6 )，並將該第 ——_______ 、 哥點（X6，”）的座標 表、氏張尺度適用中國國家鱗（ I--------辦衣------、玎------^ (請先閱讀背面之注意事項再填寫本頁) 516152 經、濟部智慧財產局員工消費合作社印製 A7 五、發明説明（12) 定義為該第四搜尋點（X4, y4)。 八、 請參閱第十五、十七圖’經由重覆進行步驟七， 直至該四搜哥點U4，y〇連續沿χ轴方向向右平移該 參考距離Η至該第六搜尋點（X6，y〇的次數，大 參數p’並將該第四搜尋—)連續向右平移的起： 座^疋義為一弟七搜尋點（X7，y7)，此第七搜尋點（X7，y7) 即代表在該第三搜尋點（X3，y3)右側最高的一點。 九、 請參閱第十八圖，該中央處理器4將該第七搜尋 a X7， X轴方向向左平移該水平參考距離Η之處 疋義為一第八搜尋點（X8，y〇 。 平 '、:青參閱：十九圖’該中央處理器4會將該攝影機 於：至该弟八搜尋點（X8, ”），拍攝存取該破片晶圓20 谁遠第八搜尋點（X8, y〇的影像’並與該母樣本晶片η 仃影像比對。若影像比對符合’則將該第八搜尋點“8 2沿Y軸方向向上平移該垂直參考距離v至一第九搜尋 診父9, y〇，並將該第九搜尋點（以，y〇的座標定義為 抵八搜尋點（X8，y8);若影像比對不符合，則將該第八 至=(X8, y8)沿x軸方向向左平移該水平參考距離η 弟十搜尋點（X1。，yi〇，並將該第十搜尋點（χι。，川） 圖座標定義為該第八搜尋點（X8，y〇。而由第十九、二十 二可知’該第八搜尋點（X8，y〇處之單位晶片21的影 ^該母樣本晶片13的影像符合，故，該中央處理器4 二亥第八搜尋點（X8，y。沿Y軸方向向上平移該垂直參考 該第九搜尋點(Χ9二)’並將該第九搜尋點(Χ9, 第14乂 (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 516152 One —————. — V. Description of the invention (7 / Put-mother wafer 10 on the cutting table, then the mother wafer :. The image can be displayed in a window 501 of the display 5 through a lens 3101 of the camera 3, the analog / digital converter state, the image memory device 4G2, and the central processing unit 4. A plurality of slicable and detachable unit wafers U are formed on the wafer 10. 'The unit wafers U are both-a first cutting direction y and a second cutting direction χ, and are arranged in an array', and each of them is uniform. There is a cutting track 12 at an interval. Each unit wafer 11 in the first and second cutting directions Υ and X is defined with a first-cutting distance and a second cutting distance D2. The cutting distance D1 is equal to the width of the unit wafer ii (a width of 12), and the first cut is equal to the length of the IDW, and the length of the center point distance D3, D4 of any early wafer 11 is, and when the operation The user can look at the window 501 of the display 5 and adjust the The method of cutting the worktable 1 and the camera 3, after aligning the mother wafer 10, 'the camera 3 can take and store the image of the mother wafer 10 and 11' and define it as a mother sample Wafer 13, so that the pre-position operation of the wafer automatic alignment procedure is completed, when a broken wafer 20 with the same specifications as the mother wafer 10 is to be used, the wafer automatic alignment procedure may be automatically performed. Alignment, the wafer automatic alignment procedure includes the following steps: 1. Zero reset: Please refer to the sixth figure, the CPU 4 will place the broken wafer 20 with the same specifications as the mother wafer 10 ( Each unit wafer 21 of the broken wafer 20 is the same size as the unit wafer 11 and has the same first and second cutting directions y, x and first and second cutting distances I ------ --- Batch clothes ------, 玎 ------ ^ (Please read the precautions on the back before filling this page) 516152 V. Description of the invention (8) Off m, D2) The cutting work And the camera 3 is driven and adjusted to an origin, so that the lens 3 01 of the camera 3 can be located above the cutting table 1. 2. Sampling: Refer to FIG. 7 'The CPU 4 captures and accesses the fragmented wafer 20 through the lens 3 01 of the camera 3, and compares the image with the mother sample wafer 13 to select the mother sample wafer. The corresponding unit wafers are defined as a stack of samples. In this embodiment, three complete sub-samples 22, 23, and 24 are taken, and the coordinate values of their center points are recorded. In addition, if it is impossible to select At least two sub-samples (for example, at the boundary of the broken wafer 20), the central processing unit 4 drives the cutting table 1 to translate in the X-axis direction, and drives the camera 3 to translate in the γ-axis direction, so that the photography 胄 3 An image of at least two sub-samples can be taken. 3. Calculate the distance: Please refer to the seventh figure. The CPU 4 calculates the distances SI, S2, and S3 between the center points of any two sub-samples 22 and 23, 23 and 24, 22, and M, respectively. 4. Calculate the remainder of the distance: the CPU 4 takes the distance S1, s2, and s3 of any two sub-samples 22 and 23, 23 and 24, 22 and 24, and first takes the second cutting distance D2 of the first cutting direction X The remainder and the smallest remainder indicate that the set of sub-samples are also located in the second cutting direction X. 5. Judging and selecting one of the sub-samples with the smallest remainder: from the fifth and seventh diagrams, it can be seen that the distance S2 between the center points of the two sub-samples 23 and 24 is almost equal to the distance D4 between the center points of any two unit wafers. Considering manufacturing errors and floating-point arithmetic errors), and the distance D4 between the center points is equal to the second cutting distance D2, therefore, the distance% of the two sub-samples 23 and 24 applies the Chinese National Standard (CNS) for the paper size of the cut A4 Specifications (21〇 < 297 mm) Section 10 f (Please read the precautions on the back before filling out this page)% ------, printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economy 516152 Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperative Cooperative V. Invention Description (v The remainder from distance D2 will be 4 orders, that is, the δ11 central processor 4 will select the two sub-samples 23 and 24 as H @ ^, 斗斗The remaining number of horses is a small set of sub-samples. In addition, if the remaining age obtained in this step is 7 baht earlier than a preset tolerance value, it means that the broken wafer 20 and the mother wafer are 1Q specifications are different, it is misplaced on the cutting and cutting table 1 'The center The device 4 will immediately stop the subsequent steps and issue an error message. / ,, From steps 4 and 5, it can be known that the sub-samples 23 and 24 of the J Fukouhai group are also located in the second cutting direction. Then, the central processing unit 4 will drive the cutting table σ 忭 口 1 to rotate around the center point (x0, y0) of the table surface. The point and the direction of Z are rotated, so that the sub-samples 23 and 24 2. The cutting direction X is rotated to a horizontal line. 17. Finally, referring to the ninth figure, the central processing unit 4 will then drive the cutting table 1 to move in the X direction, and drive the camera 3 along Y. Shift in the axial direction so that the center point of the window < δ 己 502 is adjusted to the center point of the unit wafer 21. In this way, by the above steps, the broken wafer 20 can be automatically aligned. The positive action 'then' is to find the boundary for the broken wafer 20 by the method of the present invention: please refer to the tenth figure. The method includes the following steps: 1. Please refer to the tenth-figure. One of the fragmented wafers 〇 / (立 ΗΗ 〇1, The center point of the film 21 on the 4th is the initial search point (χι, yi). 1. Please refer to the tenth figure, the central processing unit 4 will translate upward from the initial search point (parent ^) along the axis of the Y axis. A reference size r (the reference size R can use the actual size of the mother wafer wafer 10 1/2 _), please read the precautions before filling in the gutter on this page. The size of the sheet is applicable? Page 11 516152 _____B7 V. Description of the invention (10) is defined as-upper boundary point (Xup, yup) 'corresponds to the upper boundary point (xup, h), and the starting search point (XI, yi) can be defined as the lower edge 1 transport point (Xdown , Yd0Wn). 3. Please refer to the eleventh figure. The central division Dingliuzhili 4 drew the upper and lower boundary points (X UP 5 y up), (Xd.wn, yd.wn) evening v 丄 ^ Y glaze direction coordinates Divided by the fragmented wafer 20 and the Y-axis direction—the first cut distance D1 of the first cutting direction y, and rounding Zhao, Wuzhu # ... & a % Positive number, and then multiplying this integer by the first cutting distance D 1 to obtain a y-axis square inner rainbow—this new coordinate in the glaze direction j, and the new coordinate in the y-axis direction can be defined as a second search point ( X2, y2). 4. Please refer to the twelfth figure, the central processing unit 4 will pan the camera 3 to the second search point (η, y0, shoot and access the fragmented wafer at the second search point (X2, y 〇 image, and image comparison with the mother sample wafer 13. If the image comparison matches, the second search point (X2, ^) is defined as the lower boundary point (XdQwn, yd_n), and The absolute value is subtracted from the upper boundary point (Xup, yup) in step three; if the image comparison does not match, the coordinates of the second search point (M, are defined as the upper boundary point (Xup, Υ11P), and The absolute value is subtracted from the lower boundary point (Xci.% Yciown) in step 3. From the twelfth figure, it can be seen that the image of the unit wafer 21 at the second search point (N'P) is related to the The image of the mother sample wafer 1 3 is consistent, so the coordinate of the second search point (X2, y2) is defined as the lower boundary point (y ^ wn), and it is related to the upper boundary point (Xup, yup) in step 3. Subtract the absolute value. 5. Refer to Figure 13 and repeat step 3 and step 4 repeatedly until the upper and lower boundary points (Xup, yup), XdQwn, ydQwn) The absolute value of the subtraction is smaller than a set tolerance T (in this embodiment, the set tolerance T and other paper dimensions are applicable to the China Standard (CNS) Α4 specification (21GX297 No. 12 # ϋϋ '111 nm _AI ^ rlr — · Ϋ ^ — m ·· i .. · — ·. Ϋ (Please read the precautions on the back before filling out this page)-Order Printed by the Intellectual Property Bureau Employee Consumption Cooperative of the Ministry of Economic Affairs Printed by the Ministry of Economic Affairs Intellectual Property Bureau Employee Consumption Cooperative System 516152 5. Invention description (li) is twice the length of the first-cut distance D1), then approach one of the upper and lower boundary points (Xup, yup), (Xd〇wn, yd〇wn). One can be defined as a third search point (X3, y3), in Taiming A ^) In this example, the lower boundary point (Xd〇wn, yd〇wn) is defined as the third search point ( X3 y3) 6. Please refer to the fourteenth figure, the Chinese version # 口 豕 τcentric processor 4 flattens the third search point (χ3, y3) along the X axis to the right ^ horizontal reference distance Η ' Defined as-the fourth search point (X4, y0, the horizontal reference distance Η 4 in the second cutting direction X of the fragmented wafer 20 parallel to the direction) The length of the double cutting distance D2 is one. 7. Please refer to the fifteenth figure. The central processing unit 4 will translate the camera 3 to the fourth search point (&), 7) to access the broken wafer. 20 At the search of the fourth search point (X4 y4) of the brother, the ~ image, the Asian and the mother sample chip 13 image comparison. If the image comparison matches, Ding Yikou then the fourth search point ( X4, yο translate a vertical reference 1 upward along the γ-axis direction. Although v to a fifth search point (% y5), the vertical reference distance v is equal to one inch% " Ai, a double the cutting distance D 1, And the coordinates of the fifth search point (^), (, y5) are defined as the fourth search point (X4 y4); if the shadow ^ ~ image comparison does not match, the fourth search point (X4, y4) along the X axis, Cang Shiping shifts the horizontal reference distance h from the universal to the sixth search point (X6, y6), and defines the coordinates of the non-, only + -point (X6, y6) For this fourth search point + point (X4, y4). From the fifteenth and sixteenth figures, it can be known that the shirt image at y 彡 at the fourth search point (x) does not match the image of the mother sample wafer 13. Therefore, the Jiaxingyan state 4 will The fourth search point (X4 'y4) translates the sand to the right along the X axis direction by a reference distance of 砂 to the sixth search point (X6, y6), and sets the first _______, brother (X6, ") The coordinate table and scale of the scale are applicable to the Chinese national scale (I -------- handling clothes ------, 玎 ------ ^ (Please read the notes on the back before filling in (This page) 516152 Printed by A7, Consumer Cooperatives of the Ministry of Economic Affairs and Intellectual Property Bureau. 5. The description of invention (12) is defined as the fourth search point (X4, y4). 8. Please refer to the 15th and 17th drawings. Repeat step 7 repeatedly until the fourth search point U4, y〇 continuously translates the reference distance Η to the sixth search point (the number of times X6, y〇, the large parameter p 'and the Four Searches—) Starting from the continuous translation to the right: Block ^ Yi is a younger seven search point (X7, y7), this seventh search point (X7, y7) represents the third search point (X3, y3) Highest right Nine, please refer to the eighteenth figure. The CPU 4 translates the seventh search a X7, the X-axis direction to the left by the horizontal reference distance Η is defined as an eighth search point (X8, y. . Ping ',: Qing Refer to: Nineteen pictures' The CPU 4 will place the camera at: to the eighth search point (X8,), and shoot and access the fragmented wafer 20 who is far from the eighth search point ( The image of X8, y ′ is compared with the image of the mother sample wafer η 。. If the image comparison matches', then the eighth search point "8 2 is shifted up the vertical reference distance v to a ninth direction along the Y axis direction" Search for paternal father 9, y〇, and define the ninth search point (the coordinates of y〇 are defined as the eight search points (X8, y8); if the image comparison does not match, then the eighth to = (X8 , y8) translate the horizontal reference distance η to the left along the x-axis direction. The ten search points (X1., yi〇, and define the coordinates of the tenth search point (χι., Sichuan) as the eighth search point (X8 , Y〇. And from the nineteenth and twenty-two, 'the eighth search point (the image of the unit wafer 21 at X8, y0 ^ the image of the mother sample wafer 13 matches, Therefore, the CPU 4 searches for the eighth search point (X8, y. In the Y-axis direction, it translates the vertical reference to the ninth search point (X9, 2) 'and sets the ninth search point (X9, 14th) (Please read the notes on the back before filling this page)
516152 A7516152 A7
¾訂 線 (請先閱讀背面之注意事項再填寫本頁j 經濟部智慧財產局員工消費合作社印製 516152 五、發明説明（) 的切割邊界，故，該刀片201不會產生過度的空切，因而可 有效地提昇整體的生產效率。 二、藉由本發明之方法，該晶圓切割機100經一次輪入 設定相關參數後，即可適用於每一形狀、 A别入 J白个相同的 破片晶圓，而不必一再更改設定，故， ^ 月之方法的設 定操作簡便，而可再進一步提昇整體的生產效率。 值得-提的是，本發明之方法在向上搜尋後，亦可先 向左平移搜尋，再向右平移搜尋，則亦可達到與上述相同 的目的與功效，而前置作業之對正程序亦可以改由人工對 正方式完成；另外’如第二十五圖所示，該切割工作△ i 上亦可同時置放多數的破片晶圓30、40、50、60,則每口一 破片晶圓30、40、50、60’在各別經由該晶圓自動對：程 序的對正，及本發明之方法的搜尋後，亦可先後分別界定 出其自身的切割邊界，便於進行多片自動切割。 歸納上述，本發明之尋找晶圓邊界的方法，不僅可精 確地界定晶圓切割邊界，且經一次輪入設定後，即可自^ 搜尋多數相同規格之晶圓的切割邊界，故確實能達到發明 之目的。 惟以上所述者，#為本發明之_較佳實施例❿已，當 不能以此限定本發明實施之範圍，即大凡依本發明申請^ 利範圍及創作說明書内容所作之簡單的等效變化與修飾， 皆仍屬本發明專利涵蓋之範圍内。¾ Order line (Please read the precautions on the back before filling in this page. J Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 516152 V. The cutting boundary of the invention description (), so the blade 201 will not produce excessive air cuts. Therefore, the overall production efficiency can be effectively improved. 2. With the method of the present invention, the wafer cutting machine 100 can be applied to each shape, A to J, and the same fragment after setting related parameters once. Wafer, without having to change the setting again and again, so the setting method of ^ month method is easy to operate and can further improve the overall production efficiency. It is worth mentioning that after the method of the present invention is searched upward, it can also be turned to the left Pan search and pan search to the right can also achieve the same purpose and effect as above, and the alignment process of pre-operation can also be completed by manual alignment; in addition, as shown in Figure 25, The cutting work △ i can also place a large number of broken wafers 30, 40, 50, and 60 at the same time, and each broken wafer 30, 40, 50, 60 'is automatically aligned with the wafer through each of the procedures: program Right After searching for the method of the present invention, it can also define its own cutting boundary, which is convenient for automatic cutting of multiple pieces. In summary, the method of finding the wafer boundary of the present invention can not only accurately define wafer cutting. Boundary, and after one round-in setting, you can search for the cutting boundary of most wafers with the same specifications, so it can indeed achieve the purpose of the invention. But for the above, # 为 发明 的 _ Preferred embodiment 实施Now, when the scope of implementation of the present invention cannot be limited in this way, that is, any simple equivalent changes and modifications made in accordance with the scope of the present application and the contents of the creative description are still covered by the patent of the present invention.
本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公J 第id 一 (請先閱讀背面之注意事項再填寫本頁)This paper size applies to China National Standard (CNS) A4 specifications (210X 297 male J first id (please read the precautions on the back before filling this page)
516152 A7 B7 五、發明説明（15) 【元件標號對照】 習知圖不中之元件標"5虎· 100···切割機 1…切割工作台 2…刀轴 3…攝影機 4…中央處理器 402…影像記憶裝置 5…顯示器 5 0 2…標記 本發明圖式中之元件標號： 101 201 301 401 破片晶圓 刀片 鏡頭 類比/數位轉換器 501···視窗 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 10·· •母 片 晶 圓 11" •單' 位 晶 片 12··· 切 割 道 13" •母樣本 晶片 20·· •破 片 晶 圓 21 ·· •單 位 晶 片 22··· 子樣本 23·· •子 樣本 24… 子 樣本 30" •破 片 晶 圓 40… 破 片 晶 圓 50" •破 片 晶 圓 60… 破 片 晶 圓 本紙張尺度適财關家標準（CNS ) Μ規格（21。巧續〉516152 A7 B7 V. Description of the invention (15) [Comparison of component numbers] The component labels in the conventional drawing " 5 Tiger · 100 ··· Cutting machine 1 ... Cutting table 2 ... Knife shaft 3 ... Camera 4 ... Central processing Device 402 ... Image memory device 5 ... Display 5 0 2 ... Mark the component numbers in the drawings of the present invention: 101 201 301 401 Fragmented wafer blade lens analog / digital converter 501 ... windows (please read the precautions on the back first) (Fill in this page again) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs' Consumer Cooperatives 10 ·· • Master wafer 11 " • Single wafer 12 ··· Cutting line 13 " • Master sample wafer 20 ·· • Fragment wafer 21 ·· • Unit wafer 22 ··· Sub-sample 23 ·· • Sub-sample 24… Sub-sample 30 " • Fragment wafer 40… Fragment wafer 50 " • Fragment wafer 60… Fragment wafer This paper is suitable for financial matters Standard (CNS) M specifications (21. Qiao continued>