TW513751B - Electro-chemical deposition system - Google Patents

Abstract

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical, deposition system includes an edge bead removal/spin-rinse-dry (EBR/SRD) station disposed on the mainframe adjacent the loading station, a rapid thermal anneal chamber attached to the loading station, a seed layer repair station disposed on the mainframe, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

Description

513751 Intellectual Property Officer, Ministry of Economic Affairs 1- Xiao Fei ^ A7 B7 V. Description of the Invention Field of the Invention The present invention generally relates to the deposition of a metal layer on a wafer / substrate. More specifically, the present invention relates to an electrochemical deposition or electroplating system for forming a metal layer on a wafer / substrate. BACKGROUND OF THE INVENTION Sub-quarter micron, multi-layer metallization is the key to the next generation of ultra-large-scale integration (UL SI) technology. The center of gravity of this technique is that the interconnection between multiple layers requires the interconnected bodies formed with apertures with large aspect ratios to be flattened, including contact points, vias, lines, and other shapes. The reliability of such interconnected bodies after they are formed is extremely important for the success of ULSI and the subsequent increase in circuit density and quality of various substrates and molds. When the circuit gold is raised south, the widths of the vias, contacts, and other shapes and the dielectric material between them are reduced to less than 250 nm, while the thickness of the dielectric layer remains substantially unchanged, resulting in the Aspect ratio (that is, its height divided by its width), plus. Many traditional deposition processes, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), are difficult to fill structures with aspect ratios exceeding 4: 1, especially exceeding 10: 1. Therefore, the research on u said that jade actively developed a void-free, nanometer-sized and large aspect ratio value, in which the aspect ratio of the height of the shape to the width of the shape was 4: 1 A or more. In addition, as the shape width decreases, the current of the device remains unchanged or increases, resulting in an increase in the current density of the shape. The semiconductor manufacturing industry traditionally uses aluminum (A1) element and its alloy metal to form circuits and plugs. This is because aluminum has a small resistance and is broken by dioxide.) Page 2 The dimensions on page 2 apply the Chinese National Standard (CNS) A4 (210 X 297 public love) (Please read the precautions on the back before filling this page) -------- Order-ti ------- 513751 A7 B7 V. Description of the invention () The dagger stopped. However, the electrical resistance of aluminum is higher than that of other more conductive metals, such as steel. Ming also forms voids in the conductor due to electromigration. Copper and its alloys have lower electrical resistance than aluminum, so their electromigration resistance is significantly lower than aluminum. This characteristic is very important for a device with high integration and high speed to withstand the current density. At the same time, copper has good thermal conductivity and is easy to obtain pure substances. Therefore, copper has become the best choice when filling the metal of the interconnected body of the sub-quartM and semi-g ratio of the semiconductor substrate. However, although copper can be used to make semiconductor devices, there are limited manufacturing methods for depositing copper in a very high aspect ratio shape, such as 4: b with a width of 0 ° or less). Due to this manufacturing process limitation, the vias and contacts on semiconductor devices are currently being filled by electroplating (previously limited to circuits used to manufacture circuit boards). Metal plating is a well-known technique and can be achieved by various techniques. Generally, the typical method includes depositing a grid layer on the surface of the body by physical vapor method. On the grid layer, it is deposited by material gas vapor method-a conductive metal seed layer (preferably good), and then electroplating on the seed layer. Sex metal to fill its structure / shape. Finally, the deposited layer and the dielectric layer are flattened. For example, the mechanical layer (cMp) is used to define the boundaries of the conductive interconnects. FIG. 1 is a schematic cross-sectional view of a typical sprayer 10 equipped with a contact pin. Generally speaking, the sprayer includes: 7 openings at the top, 7 packs ~ hard container 1, 2, a substrate support 14 above the electrolyte container 12, and ^ σ ^ 1 at the bottom of the electrolyte container 12. % Pole 16 and the junction with the base material 22 "Ting Ding, Master Tutu 3 clothes 20". There are several grooves 24 on the lower surface of the substrate holder I4. The vacuum pump 1 Hexianbu) is connected to the substrate. Page 3 This paper is standard national standard (CNS) A4 (Ka X 297). ~ (Please read the precautions on the back before filling this page). A7 V. Description of the invention () Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, M ′ supports I 14 and communicates with the groove 24 to generate a vacuum state so that the substrate 22 can be fixed on the substrate support 14 during processing. The contact ring 20 has a plurality of metal or semi-metal contact pins 26 distributed around the substrate 22 to define a central substrate plating surface. This series of contact pins 26 are radially inwardly distributed on the narrow peripheral portion of the substrate 22 and touch the tip of the contact pins 26 to contact the conductive seed layer of the substrate 22. A power source (not shown) is attached to the needle 26 to provide electrical bias to the substrate 22 ° The substrate 22 is located above the cylindrical electrolyte container 12 and the electrolyte flow is perpendicular to the substrate when the tank 10 is running Wood plating surface. Although current plating baths, such as those shown in Figure 1, are not effective at processing large substrates, there are still many obstacles, including achieving reliable electroplating on substrates with micron size and high aspect ratio features. Generally, such obstacles include providing a stable voltage and current density on the electroplated surface of the substrate to form a uniformly thick metal layer, avoiding the formation of unwanted edges and back deposits in order to control the substrate to be treated and subsequent substrates. To contamination, and maintain a vacuum state during processing to ensure that the substrate is firmly on the substrate support. At the same time, the current plating tank has not yet provided satisfactory production capacity to meet the needs of other processing systems, and its design does not take into account future requirements in terms of design criteria and gap filling. Outside of production, the current system has not been able to solve the problems caused by the plating process due to insufficient seed layers or continuous lasers. In addition, the current electroplating system platform does not provide post-electrochemical deposition processing, such as: rapid thermal annealing treatment 'in order to improve the deposition effect in the same system platform. Another specific problem that is faced during a typical plating process is the excessive deposition of the seed layer edges during the plating process, which is commonly referred to as a bead. Figure 1 A is the cross section of the edge of the wafer 30, shown at the edge 32 of the seed layer 34: Page 4 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please first Read the notes on the back @Fill this page) • Pretend to be poor. #_ A7 ~ ------- B7 —______ V. Description of the invention () Excessive deposits 36. As shown in Fig. Α, there is a seed layer 32 deposited on the wafer 30 where 3 β, _ iA. The seed layer 34 is an electroplated layer 38 deposited on the seed layer 34. & It can be observed that the current density of the edge 32 of the seed layer 34 is higher than that of the other seed layers 34, and the edge 32 of the seed layer 34 causes a faster deposition rate. The mechanical tension of the edge 32 of the crystal layer ^ is also higher than that of other seed layers, so that the deposition on the edge of the crystal layer is pulled up from the edge of the wafer 30 and detached. Excess deposits are usually removed by CMP. However, during the CMP process, the excessive deposit a 6 on the edge of the wafer is often torn off from the edge of the seed layer to damage the adjacent part of the wafer. Broken metal can also damage the devices formed on the wafer. Therefore, the number of appropriately formed devices is reduced and the manufacturing cost of the device is increased. In addition, the current plating system cannot perform the necessary processing steps without involving other peripheral components and time. For example, chemicals in a plating process need to be analyzed regularly during processing. This analysis can determine the composition of the electrolytic solution and ensure that the composition has an appropriate ratio. The traditional analysis method is to extract the electrolyte sample from the test end and transport the sample to the analyzer at the end. The electrolyte composition is adjusted manually based on the analysis results. This analysis step must be performed frequently because the concentration of the competing chemicals is constantly changing. However, the above method is quite time-consuming 'and the number of analyses is also limited. Therefore, the 'electrochemical deposition system needs an expandable elastic structure design that takes into account future design and gap filling requirements and provides satisfactory production capacity to meet the needs of other processing systems. The electrochemical deposition system must also be able to provide stable voltage and current density to form a metal layer with a uniform thickness, and it is difficult to maintain a vacuum state during processing to ensure that the substrate is firmly supported on the substrate; page 5 of this paper applies Chinese national standard (〇 ^) Α4 size ⑵Q χ tear public love) (Please read the note on the back first '^: Fill in this page) 1 Binding-! · ------ # _ Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative soil pi A7 -------- B7 _____ I. Description of the invention () On wood. This equipment must further include a system with physical deposition capabilities to strengthen the starting conductive layer during subsequent plating processes. This system must avoid and / or remove undesired edges and back deposits in order to control the substrate to be processed and subsequent Fugu A ~ 1 watt of storm material to 3 dyes. This equipment must be able to remove wafers Excessive deposits on the wafer are followed by wafer cleaning procedures, such as spin, rinse, and dry procedures. The system must also have a processing system integrated with one or more chemical analyzers for on-line analysis of the electrolyte composition. This electrochemical deposition system must also be able to enhance post-electrochemical deposition treatments, such as rapid thermal annealing treatments, in order to enhance the deposition effect. SUMMARY OF THE INVENTION The present invention generally provides an electrochemical deposition system whose design has taken into account future requirements in design and gap filling, and provides satisfactory production capacity to meet the needs of other processing systems with expandable elasticity structure. The electrochemical deposition system generally includes: a mainframe I having an automatic wafer changer, a loading station connected to the mainframe, one or more processing tanks connected to the mainframe, and one minus multiple electric processing tanks Fluid connection electrolyte supply. Preferably, the main frame also includes a bead removal / rotation-washing-drying (EB, R / SRD) platform and a seed layer repair platform. Preferably, the electrochemical deposition system also includes a rapid thermal annealing chamber with an I loading station, an electrolyte replenishment system integrated with the chemical analyzer, and components for controlling the electrochemical deposition process and the electrochemical deposition system components. System controller. One of the features of the present invention is that the electrochemical deposition system can supply a stable voltage and current density to form a metal layer with a uniform thickness, and maintain a vacuum state during processing to ensure that the substrate is firmly fixed on the substrate support. : Page 6 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back _ fill out this page) 191 tT ---.--- #! 513751 A7 5. Description of the invention (The electrochemical deposition system, which is one of the other features of the present invention, can prevent and / or remove unwanted edge and back deposition in order to control the substrate to be treated and subsequent substrates to be contaminated. Other features of the present invention One of the devices can electrochemically deposit metal on substrate 1, including a head-end fitting and a wafer holder with a cathode, a treatment kit with an electrolyte container and an anode, an electrolyte overflow basin, and a connection between the cathode and anode. Power supply. Preferably, the cathode includes a cathode ring, and the wafer holder includes a pouch. The system ensures that the cathode ring has proper contact with the wafer. It is better to coat the surface of the cathode ring in contact with the electrolyte. Cover or treat to provide a hydrophilic surface. One of the other features of the present invention is to provide a packaged anode with permeability in order to remove anode residues and other particles caused by anode dissolution. Preferably, a packaged anode It should contain a hydrophilic membrane that can block or filter contaminants in the electrolyte. The packaged anode preferably includes a bypass electrolyte inlet and a bypass outlet to promote the electrolyte flow in the package anode. Other features of the present invention ^ An electrolyte replenishment system has a connected chemical analysis module and a metering unit. The chemical analyzer micro-module includes one, preferably two analyzers, which are controlled by a controller and communicate with the control system. #Synthetic electrochemical deposition system. Its sampling tube can continuously send the electrolyte from the main electrolyte tank to the micro-component of the chemical analyzer. The first analyzer measures the concentration of organic substances in the electrolyte, and the second analyzer measures the inorganic substances. Concentration. Then, in response to the information collected by the chemical analyzer micro-module, the metering micro-module is started to transmit the appropriate proportion of chemicals to the main tank. One of the other features of the present invention also provides a connected chemical analyzer micro-module. 7 Page 眯 Zhang scale suitable financial specifications coffee χ tear) (Please read the notes on the back before filling this page) · nnnn ϋ n n--aJi ϋ «I * n A7 B7 5 Explanation of the invention. The chemical analyzer micro-component includes at least one, preferably two analyzers, which are controlled by the processor and integrated with the control system into an electrochemical deposition system. Its sampling tube can be continuously sent out from the main electrolyte tank for electrolysis. The liquid flows to the micro-analyzer of the chemical analyzer. The first analyzer measures the concentration of organic substances in the electrolyte, and the second analyzer measures the concentration of inorganic substances. One of the other features of the present invention can remove excess deposits on the edges of the wafer. Without damaging the device formed on the surface of the wafer. This equipment can perform wafer cleaning procedures, such as spin-rinsing-drying procedures, after removing the deposition on the wafer! The equipment of one of the other features of the present invention can improve subsequent The plating process < starts with the conductive layer and continues the reliability of the deposit on the body. One of the other features of this meal is to provide post-electrochemical deposition treatment, such as fast ... L fire treatment 'to improve the effect of radon deposition. This rapid thermal annealing equipment preferably includes a rapid thermal annealing chamber that is compatible with the electrochemical deposition system loading station. Other features this month include the provision of a rotary head-end fitting in the plating bath to spin the wafer during processing to improve the consistency of the deposition. Rotary head-end fittings also help to remove residual electrolyte from wafer holder fittings after the plating process. The preferred component of the "wafer holder assembly" includes an expandable pouch and a cathode ring 'to have a hydrophilic surface, preferably to promote dripping, and to remove residual electrolyte. Figure 7f briefly describes the features of the present invention mentioned above. ^ Page 8 ------------ Install --- (Please read the precautions on the back before filling this page) Order.! l ----- Participant Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

His Majesty will explain the present invention in more detail with specific examples and accompanying drawings. However, the drawings are only intended to illustrate typical specific embodiments of the present invention, and are not intended to limit the scope of the present invention or other equally effective specific embodiments. Figure 1 is a cross-sectional view of a typical simplified sprayer 10 equipped with contact pins. Intellectual Property Bureau of the Ministry of Economic Affairs Figure 1 A is a cross-sectional view of a wafer 30 edge, showing that the edge 32 of the seed layer 34 has Excessive deposits 36. FIG. 2 is a perspective view of a plating system platform 200 according to the present invention. FIG. 3 is a schematic diagram of a plating system platform 200 according to the present invention. Fig. 4 is a schematic perspective view of a spin-rinsing-drying (SRD) micro-module according to the present invention, with a flushing and dissolving liquid inlet. Fig. 5 is a cross-section of the side of the spin-rinse-dry (SRD) micro-module of Fig. 4 and shows the processing position where the substrate is standing between the liquid inlets. FIG. 6 is a cross-sectional view of a plating treatment tank 400 according to the present invention. Fig. 7 is a cross-sectional perspective view of a cathode ring portion. Fig. 8 is a cross-sectional perspective view of a cathode ring, showing another specific embodiment with a contact sheet. Fig. 9 is a cross-sectional perspective view of a cathode ring, showing another embodiment with contact pads and separate pads. Fig. 10 is a cross-sectional perspective view showing a cathode ring with a separate gasket. Figure 11 is a simplified circuit schematic diagram representing the plating system passing through each contact pin (please read the precautions on the back before filling this page) · 丨 丨 丨 丨 丨 Order ---- 一 丨 --- I 'Printed by Consumer Cooperatives Figure 12 is a cross-sectional view of the wafer accessory 450 of the present invention. Page 9 This paper is sized for China National Standard (CNS) A4 (210 X 297 mm)

FIG. 12A is an enlarged cross-sectional view of the bladder region of FIG. 12. Figure 13 is a partial cross-sectional view of a wafer holder plate. Figure 14 is a partial cross-sectional view of a manifold. Figure 15 is a partial cross-sectional view of the pouch. FIG. 16 is a schematic diagram of the electrolyte replenishing system 220. Figure 17 is a cross-sectional view of a rapid thermal annealing chamber. FIG. 18 is a perspective view of another embodiment of a cathode ring. Fig. 19 is a partial cross-sectional view of another embodiment of a wafer holder accessory. Fig. 20 is a cross-sectional view of a first embodiment of a package anode. FIG. 21 is a cross-sectional view of a second embodiment of a packet anode. FIG. 22 is a cross-sectional view of a third embodiment of a packet anode. FIG. 23 is a cross-sectional view of a fourth embodiment of a packet anode. FIG. 24 is a cross-sectional view of a non-electrolytic deposition (EE) P) tank. Figure 25 shows another embodiment of a processing head end fitting, which has a rotary head end fitting 2410. 26a and 26b are cross-sectional views of a specific embodiment of a degassing micro-module. Fig. 27 is a cross-sectional view of the combined bead removal / rotation-rinsing-drying (EBr / SrD) micro-t-shaped M piece, showing the processing position where the substrate is standing between the liquid inlets. Fig. 28 is a bird's-eye view of an EBR / SRD micro-module, showing a specific embodiment of the position where the beads are removed from the nozzle. FIG. 29 is a relationship between the position of the nozzle 2150 and the processed wafer 2122. '' Page 10 This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page) · —a flu taaw iinn Order --- I- Ministry of Economy Printed by the Intellectual Property Bureau employee consumer cooperative 513751 A7 B7 Printed by the Intellectual Property Bureau employee consumer cooperative of the Ministry of Economic Affairs 5. Description of the invention () Drawing number comparison description A2 Arrow 10 Sprayer 12 Electrolyte container 14 Substrate holder 1 Anode 20 Contact ring 22 Substrate 24 Groove 26 Contact pin 30 Wafer 32 Edge 34 Seed layer 36 Deposit 38 Plating layer 159 Extraction system 200 Plating system platform 210 Loading station 211 Rapid thermal annealing (RTA) chamber 212 Spin-rinse-dry ( SRD) platform 214 host 215 seed layer repair platform 216 main rack transfer platform 217 base 218 processing platform < 220 electrolyte replenishment system 221 power platform 222 control system ^ 23 control @ instrument board 224 chip cassette receiving area 228 loading station Automatic changer 229 Loading station automatic changer 230 Wafer positioning machine 232 Wafer cassette 234 Wafer 236 SRD micro module 236 EBR / SRD micro Module 238 SRD Mini Module Page 11 (Please read the precautions on the back before filling out this page) · Installation —— ^ —— Order——Boli 丨 This paper size applies to China National Standard (CNS) A4 (210 X 297) (Mm) 513751 A7 B7 V. Description of the invention () 238 Wafer transfer cassette 239 Wafer transfer cassette 240 Processing tank (Please read the precautions on the back before filling this page) 242 Automatic transfer host 254 Vacuum extraction clamp 330a Bottom 330b Side wall 330c Upper cover 330d SRD micro-assembly basin trough 332 Base base '334 Base transmission 336 Base 336a Base waste arm 336b Base arm 337 Clamp 337a Clamp lower end 337b Pivot 337c Clamp upper end 338 Base material 339 Outlet 340 First liquid inlet 342 Mounting portion 343 Hinged member 344 Connecting portion 346 First conduit 346a Auxiliary liquid inlet < 346b conduit '346c Control valve 347a Valve' 347 Employee of the Intellectual Property Bureau, 7th Ministry of Liquid Economy Printed by a consumer cooperative 348 First nozzle 349a Control valve 350 Second liquid inlet 351 Second nozzle 352 Second conduit 353 Hinged member 362 Controller 400 Plating Processing tank 410 Head end fittings Page 12 This paper size applies to Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 B7_ V. Description of the invention () 420 Processing Set 430 Basin 440 Electrolyte collector 442 Body 443 Opening 446 Inner wall 447 Bottom 448 Outer wall 449 Electrolyte outlet 450 Wafer bracket fitting 452 Head end fitting rack 454 Mounting frame 456 Suspension beam rod 457 Cantilever beam transmission 458 wafer Accessory transmission 460 Fixing plate 462 Head end fitting handle 464 Wafer holder 466 Cathode ring 470 Pouch fitting 472 Container body 474 Anode fitting 476 Filter membrane 478 Circular dam 480 Inner annular flat portion 482 Middle inclined portion < 484 outer Lower slope part 486 Lower annular flange 487 Ferrule 488 Bolt 490 Fastening nut 492 Spacer 494 Porous anode housing 495 Ferrule 496 Soluble metal 497 Threaded part 498 Anode electrical contact 499 Fastening nut 502 Cylindrical part < page 13 This paper size applies to Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) ------ ----- Equipment -------- Order --------- (Please read the precautions on the back before filling this page) 513751 A7 _ B7 V. Description of the invention () Ministry of Economy Wisdom Printed by the property bureau employee consumer cooperative 504 Bottom part 506 Upper ring flange 508 hole 510 Main electrolyte inlet 602 Main electrolyte tank 603 Metering micro module 604 Filter membrane tank 605 Filter micro module 606 Source tank 607 Valve '608 Liquid pump 609 Valve 610 Control # 611 Controller 612 Electrolyte supply line 613 Sampling tube 614 Electrolyte return line 615 Automatic titration analyzer 616 Chemical analyzer micro-assembly 617 Current circulation eliminator (CVS) 619 Controller 620 Electrolyte wastewater drain pipe 621 Outlet line 622 Electrolyte waste disposal system 624 Heat exchanger 630 Degassing micro module < 630, degassing micro module v 632 hydrophobic membrane 632, hydrophobic membrane tube '634 liquid passage 636 vacuum system 638 housing 640 inlet 642 outlet Π 700 External Resistor 702 Power Source 704 Electronic Sensor / Alarm 754 Substrate Electron Microscope Surface 762 Flange Page 14 ——————————— Order * ---- ^ (Please read first Read the notes on the back and fill in this page again) This paper size applies Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) 513751 A7 B7 V. Description of Invention () Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 764 Shoulder 765 Conductive member 768 Substrate seating surface 770 Ring-shaped insulating body 772 Inner electrical contact piece 776 Conductive connector 780 Outer electrical contact piece 782 Insulating pad 802 Container body 820 Substrate key surface 821 Substrate 832 Wafer holder plate 836 Carry bag 837 Sealing washer 838 Fluid source 840 Ring recess 841 Vacuum nozzle 842 Inlet 843 Ring mounting duct 844 Hose 845 Pump 846 Ring manifold 847 Switching valve 848 Inner shoulder 849 Vacuum ejector 850 Outer shoulder < 852 Mounting crossbar '853 Pressure line 854 Outlet 855 Vacuum line 856 Ring-nozzle gasket 857 Cover 859 Extraction system 861 Shut-off valve 902 Housing 904 Heating plate 906 Substrate support bolt 907 Heater 908 Base page 15 (Please read the precautions on the back before filling in this (Page)-Packing-Order ΓKK-This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) 513751 A7 B7 V. Description of the invention () Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 910 Side wall 912 Top 913 Cooling plate 914 Reflective insulation disc 916 Power supply 918 Cooling member 920 Thermocouple 922 Conduit 922 Opening valve 924 Opening '926 Tubular conduit 928 Elevator plate 930 Passport 932 Elevator handle 934 Sealing flange 936 Gas inlet 938 Gas source 940 Valve 942 Gas outlet 944 Convex / check valve 1800 Cathode ring 1810 Installation above Part 1820 Substrate receiving part 1822 Ring base seat surface 1824 Contact piece or bumper 1900 Wafer holder accessory < 1910 Intermediate wafer support plate 1912 Back 1914 Front face θ16 Elastic seal 19 Drilled or Hole 2000 package anode 2002 anode package film 2004 anode plate 2006 electrical contacts or connecting wires 2008 top package film 2010 bottom package film 2012 film support ring page 16 (please read the precautions on the back before filling this page), install !! Order · ---- ^ This paper size applies to Chinese National Standard (CNS) A4. Specification (210 X 297 mm) 513751 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () 2014 Bypass liquid Inlet 2016 Bypass outlet 2020 Flow control valve 2022 Flow control valve 2024 Opening 2102 Container 2104 Wafer holder fitting 2106 Liquid / chemical transfer accessories 2108 Cylindrical side wall 2110 Bottom of the container '2112 Center hole 2114 Upper curved inner wall 2116 Liquid certificate outlet 2118 Lifter accessories 2120 Rotary accessories 2122 Wafer 2124 Vacuum chuck 2126 Wafer edges 2128 Ring seal 2130 Wafer lifter 2134 Arm 2136 Ring base 2137 Wall 2138 Cross clip 2140 Upper surface 2142 Clamp section < 2144 Lower section, 2150 Nozzle 2152 Distributing boom ^ \ 154 Transmission device 2156 Elastic pipe 2160 Deionized water source 2162 Etchant source 2164 Computer control 2170 Lower nozzle 2172 Deionized water nozzle 2174 Transmission device 2176 Boom 2200 EBR / SRD micro assembly. Page Π (please first Read the notes on the back and fill out this page) Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 513751 A7 B7 V. Description of invention () Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 2402 Automatic Arm 2404 Terminal Control Device 2410 Rotary End fitting 2450 Wafer bracket fitting 2452 Head end fitting rack 2453 Handle 2454 Holder 2455 Shelf top cover 2456 Cantilever rod 2457 Cantilever rod drive 2458 Head lift drive 2459 Pivot joint 2460 Fixed guide 2464 Rotary drive 2466 Lifting guide 2468 Handle 2470 Handle 3010 EDP slot 3012 Bottom 3014 Side wall 3016 Top cover 3018 Base 3020 Base transmission 3022 Substrate 3024 Base lift 3026 Vacuum suction cup '3028 Clamp' 3030 Ring cover 3032 Ring cover 3034 Outlet 3036 First conduit 3038 Non-electrical deposition liquid valve 3040 Controller 3042a-f valve 3044 Non-electrical deposition liquid container 3046 First liquid inlet 3048 Hinged member 3050 First nozzle 3052 Second conduit page 18 (please read the back first (Notes to fill in this page) Order, ---- ^ s'. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 513751 Printed clothing A7 B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy Valve 3059. Details of the preferred embodiment of the articulated member. Figure 2 is a perspective view of the plating system platform 2000 of the present invention. FIG. 3 is a schematic diagram of a plating system platform 200 of the present invention. 2 and 3; the plating system platform 200 generally includes a loading station 210, a thermal annealing chamber 211, a main frame 214, and an electrolyte replenishment system 220. Preferably, the plating system platform 200 is enclosed in a clean environment made of panels (eg, plastic glass panels). Main frame 214 generally includes a main frame transfer platform 216, a spin-rinsing (srd) platform 2 1 2, a seed layer repair platform 2 1 5 and several processing platforms 2 1 8. The main frame 214 includes a base 217 on which a circuit breaker is provided to support each platform necessary to complete the electrochemical deposition process. The bases 2 and 7 are preferably made of aluminum, stainless steel, or other rigid materials for supporting various platforms arranged thereon. Chemical protective coatings, such as HaUkTm, < ethylene-chlorine-tri-gas-ethane (ethylene-chl〇r〇-

Ui-fluowethaylene (ECTFE), or other protective coating agent, is better to be coated on the surface of the base 2 1 7 which is easily corroded by chemical drugs. Preferably, the protective layer can provide good shape retention of the metal base 2 1 7, tightly adhere to the metal base 2 1 7, provide good ductility, and be resistant to cracking under normal system operating conditions. Each processing platform 218 includes one or more processing tanks 240. The electrolyte replenishing system 2 2 0 is adjacent to the main frame 2 1 4 and communicates with the processing tank 24 0 respectively to carry the electrolyte required for the electroplating process. The key system platform 2 00 also includes a power platform 2 2 1 to provide power to the system and control system 2 2 2, which usually includes page 19. This paper size applies to Chinese National Standard (CNS) A4. Specifications (210 X 297 mm ) (Please read the notes on the back before filling this page) Μ——ί Order, iL ----- A7

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 V. Description of Invention () Program-controlled microprocessor. The loading station 210 preferably includes one or more wafer cassette receiving areas 224, one or more loading station automatic transfer machines 228, and at least one wafer positioner 23o. The number of wafer cassette receiving areas, loading station automatic transfer machines 228, and wafer positioning machines in loading station 21 may be determined based on the production capacity of the desired system. As shown in the specific embodiments of FIGS. 2 and 3, the loading station includes two wafer cassette receiving areas 224, two loading station automatic transfer machines 228, and one wafer positioning machine = 30. The wafer cassette 232 containing the wafer 234 is mounted on the wafer cassette receiving area 224 to send the wafer 234 to the plating system platform. The loading station automatic transfer machine 228 transfers the wafer 234 between the wafer cassette 232 and the wafer positioning machine 23o. The loading station automatic changeover machine comprises a typical automatic changeover machine known in the art. The wafer positioning machine 230 positions each wafer 234 in a desired orientation to ensure that the wafers are properly processed. The loading station automatic changeover machine 228 also switches wafers 234 between the loading station 210 and the SRD platform 212 and between the loading station 210 and the thermal annealing chamber 211. The loading station 21o also packs another wafer cassette 231, which can temporarily store wafers when critical to improve the efficiency of the system's wafer conversion. ,

Figure 4 is a schematic overview of the spin-rinsing-drying (SRD) micromodule of the present invention, with secondary washing and dissolving solution inlets. Fig. 5 is a cross-sectional view of the side of the spin-rinsing-drying (SRD) micro-module of Fig. 4 and shows the processing position where the substrate is standing between the liquid inlets. Preferably, the SRD platform 2 1 2 includes one or more SRD micro-assemblies 236 and one or more wafer transfer cassettes 238. Preferably, the SRD platform 212 includes two SRD micro-modules 236 which are equivalent to the number of loading station automatic changers 228, and the wafer transfer cassette 238 is located in each SRD. Page 20 (210 x 297 mm) (Please read the notes on the back before filling this page)

Printed on top of micro-components by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The wafer transfer cassette 238 facilitates the transfer of wafers between the loading station 21 and the main frame 214. The wafer transfer cassette 238 is accessible between the loading station automatic changer 228 and the main frame transfer platform 216 automatic machine. 4 and 5, the SRD micro-module 23 8 includes a bottom portion 330a and a side wall 330b, and the upper cover plate 330c together defines the SRD micro-module basin 330d, wherein the cover plate is connected to the side wall to retain the liquid SRD micro-assembly. Alternatively, a removable top cover can be used. The base 336 is located in the SRD micro-module, and includes a base base 332 and a base transmission 334. During processing, the base 3 3 6 supports the substrate 3 3 8 (as shown in FIG. 5) on the upper surface of the base. The base transmission 334 rotates the base to rotate the base and raises and lowers the base in the following manner. seat. The substrate can be supported on the base by several clamps 3 3 7. The clamp rotates with centrifugal force and clamps only the substrate in the restricted area of the substrate edge. In a preferred embodiment, the gripper grips the substrate only when the substrate is lifted off the base during processing. Vacuum ports (not shown) and other support elements can also be used. The base has several base arms 3 3 6a and 3 3 6b, which can maximize the surface area of the lower surface of the substrate that is impacted by the liquid sprayed by the second nozzle. The outlet can be used to remove liquid and body from SRD micro-assembly. The text is used to describe the position, below, bottom, top, bottom, top, bottom, top, bottom, top, bottom, top, bottom, and bottom. The illustrations of the specific embodiments are related and depend on their orientation relative to the processing equipment. A liquid 347 is circulated in the first conduit 346 and is connected to the valve 347a. The catheter may be a hose, a delivery tube, a hose, or another fluid-containing catheter. The valve 34 7a controls the flow of the first liquid 347 and may be selected from various valves, including a needle valve, a ball valve, a butterfly valve, or other valve types, and may include a 3 6 2 control. Page 21 This paper size applies to China National Standard (CNS) A {Specification (21〇x 297 mm) ------------------- Order — ^ ----- (Please (Read the notes on the back before filling out this page)

513 / M V. Description of the invention (made of valve actuators, such as solenoids. The conduit 346 is connected to the first-liquid inlet 3 to 40 above the substrate, including mounting parts 342 and sRD which can be fixed on the sRD micro-module. The connection part 344 fixed on the conduit 346. The first liquid has a single first nozzle 348 at the inlet, which can convey the first liquid 347 to the upper surface of the substrate under pressure. However, multiple nozzles can also be used, and multiple The liquid inlet can be placed near the inner edge of the SRD micro-module. Preferably, the nozzle placed above the substrate should be outside the diameter of the substrate to prevent the nozzle from dripping onto the substrate. The first liquid inlet can be installed on the Several locations, including the top cover passing through the substrate. In addition, the hinge member 343 can be used to join the nozzle in various locations, such as ball and socket and sleeve joints. The second conduit 352 is similar to the first conduit described above And related components, which are connected to the control valve 349a and the second liquid inlet 35 of the second nozzle 351. The second liquid inlet 350 is located below the substrate and guides the second liquid through the second nozzle 3 51 angle upward While facing Under the material. Similar to the first liquid inlet, the second liquid inlet can include several nozzles, several liquid inlets and installation positions, and several orientations, including the use of hinge members 3 5 3. Each of the liquid inlets can extend into the SRD micro Various positions inside the module. For example, if you want to make the liquid flow backward at a certain angle toward the periphery of the S RD micro module at the edge of the substrate, you can arrange the nozzles in a radial pattern inside the ▲ so that the discharge flow of the nozzle will Spray backwards towards the periphery of the SRD micro-module. The controller 362 can control the two liquids and their individual flow rates, pressures, and time, as well as any associated valves, and rotation cycles. The controller can be located in a shaken place, such as at Control the piping on the dashboard or control room and control the piping with a remote control. Another specific embodiment (shown in dashed lines) provides an auxiliary liquid inlet. Page 22 ^ Paper size applies Chinese National Standard (CNS) A4 (210 X 297) (Mm) (Please read the precautions on the back before filling out this page) Order —— * Printed by the Employee Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 513751

V. Description of the invention () ^ 46a, which is connected by the conduit 346b to the first conduit 340 and has a control valve j46c, which allows the flushing liquid to flow through the back of the substrate after the dissolution liquid passes without moving the substrate or passing through the first The liquid flow at the two liquid inlets was changed to a flushing liquid. One of the specific embodiments is that the substrate is installed with the deposition side of the processing surface of the Srd micro-module trough upward. As will be explained below, this arrangement will typically cause the first liquid inlet to flow out of the rinse fluid, usually deionized water or alcohol. As a result, the back of the substrate will be installed facing downward, and the liquid flowing out of the second liquid inlet will be a dissolving liquid such as an acid (including hydrochloric acid, sulfuric acid, phosphoric acid, hydrofluoric acid) or other dissolving liquid or liquid type. Depending on the material. In addition, if the purpose of this procedure is to rinse the treated substrate, both the first liquid and the second liquid are rinse liquid 'such as deionized water or alcohol. When in operation, the base is at a higher position, as shown in Figure 4, and the robot (not shown) places the substrate on the base in a face-up manner. The pedestal lowers the substrate to a processing position where the substrate stands between the first and second liquid inlets. Typically, for a 200 mm substrate, the base drive rotates the base between about 5 and about 5000 rpm (-$ between about 20 and about 2000 rpm). This rotation i caused by the centrifugal force causes the lower end 33 7a of the pincer to rotate outwards around the pivot axis 337b toward the side wall of the S R D micro-module. The refreshing rotation forces the upper end of the clamp 337 inward and downward toward the center, and fixes the substrate 338 on the base 336, preferably clamping the edges of the substrate. The clamp can be rotated in its position without touching the substrate ' and the substrate is fixed to the substrate only when the substrate rises significantly away from the substrate during processing. Since the base is rotated around the substrate, the rinsing liquid is transferred to the front side of the substrate through the first liquid inlet 340. Transfer a second liquid (such as acid) to the backside through the second liquid inlet to remove any unwanted deposits. Page 23 This paper is sized for China National Standard (CNS) A4 (210 X 297 public love) (Please read first (Notes on the back then fill out this page)

· N eat ϋ ϋ ί «ϋ β I mmmm§ n ϋ H-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 B7 V. Description of the invention (). The dissolution solution chemically reacts with the sediment and dissolves it, and then it is washed away from the back of the substrate and any other areas that have unwanted deposits. In a preferred embodiment, the flow rate of the 'rinsing solution is higher than that of the dissolving solution to prevent the front side of the substrate from being affected by the dissolving solution. The optimal location of the first and second liquid inlets depends on the size of the substrate, the individual flow rate, the spray pattern, the amount and type of sediment to be removed, and other factors. In some cases, the rinsing liquid may be sprayed from the second liquid 'inlet after the dissolution liquid dissolves the unwanted deposits to rinse the back of the substrate. In other cases', the back of the substrate may be spray-washed with an auxiliary liquid inlet connected to the rinsing liquid to remove any residual solution residue remaining on the back. After the front and / or back surface of the substrate is rinsed, the flow is stopped. The base continues to rotate to rotate the substrate, so the surface is effectively dried. The liquid is generally delivered in a spray mode, which can include fan, spray, cone, and other modes depending on the particular nozzle of the spray mode. One of the spray modes of the liquid flowing from the first and second liquid inlets (with the first liquid as the flushing liquid) is fan-shaped, with a pressure of about 10 to about 5 pounds per square inch (psi) and a flow rate per minute About i to about 3 gallons (gpm) sprayed on a 200mm wafer

S on. The present invention can also be used to remove unwanted deposits on the edges of the substrate to form a forbidden zone. After adjusting the orientation and position of the nozzle, the liquid flow rate, the substrate rotation speed, and the chemical composition of the liquid, unwanted deposits on the edges and / or forbidden areas of the edges can also be removed. Therefore, it is not necessary to include the edge of the substrate or the edge exclusion zone when preventing the sediment on the front surface from dissolving. At the same time, the prevention of dissolution of the sediments on the front surface should at least include the prevention of dissolution, so that the damage to the sediments on the front surface will not exceed its commercial value. ^ Page 24 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Binding ill · ----- ^ 91. Ministry of Economic Affairs Wisdom Printed by the Consumer Cooperative of the Property Bureau 513751 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () One of the methods to achieve the dissolution treatment of the edge restricted area is to use a lower solution when dissolving the solution on the back of the substrate The rotation speed of the disc, for example, about 100 to about 1000 rpm. The centrifugal force will remove the dissolving liquid onto the edge of the substrate and form a liquid layer 'around the edge due to surface tension. Therefore, the dissolving liquid overlaps from the back surface of the substrate to the front edge region. Both the rotation speed of the substrate and the flow rate of the dissolving solution change the degree of overlap with the front surface. For example, reducing the rotation speed or increasing the flow rate will reduce the degree of overlap of the liquid on the opposite side (for example, Positive®). In addition, 'adjusting the flow rate and spray angle of the flushing liquid to the front side can correct the edge of the substrate and / or the layer of the dissolving liquid on the front side. In some cases, the dissolving solution can be used without the use of a rinsing solution to remove the edges and / or the forbidden area of the edges, and then the above-mentioned rinsing / dissolving procedure can be used. Figure 27 is a cross-sectional view of a combined bead removal / rotation-rinsing-drying (EBR / SRD) micro-assembly showing the substrate in a processing position standing upright between the liquid inlets. The embodiments of the present invention are all applicable to bead removal (EBR) and spin-rinse-dry (SRD) procedures. The EBR / SRD micro-module is preferably placed in the SRD platform 212 (see Figure 3). The EBR / SRD micro-module 2200 includes a container 2102, a crystal: > sheet holder accessory 2104, and a liquid / chemical delivery accessory 2106. The container 2102 preferably includes a cylindrical side wall 2 1 08, the container bottom 2 110 has a central hole 2113, and an upwardly curved inner wall 2114 extends upward from the periphery of the edge of the central hole 2112. The liquid outlet 2 11 6 is connected to the bottom 2 110 of the container to discharge waste liquid and chemicals from the EBR / SRD micro-assembly 2200. The wafer holder fitting 2 1 04 is located above the center hole 2 1 1 2 and contains a lifter fitting 2 1 1 8 and a rotating fitting 2 1 20 passing through the center hole 2 11 2. Lifter accessories 2 1 1 8 with bellows lifter or lead screw stepper motor lifter, page 25 This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) (Please read the precautions on the back first (Fill in this page again) I ΙΓ 513751 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The description of the invention () is better, it is known in the art and is a commercial product. The lifter accessory 2118 helps to move the wafer 2122 between various upright positions' and position it on the wafer holder accessory 2104. The swivel accessory 2120 should include a swivel motor mounted under the elevator accessory. The rotating accessory 2 1 20 rotates the wafer 2122 during the bead removal process. The wafer holder fitting 2 1 04 includes a vacuum chuck 2 1 2 4 which includes a wafer 2 1 22 which is fixed from the back of the wafer and does not block the wafer edges 2 1 2 6. A ring-shaped gasket 2 1 2 8 is used on the surface of the peripheral portion of the vacuum chuck. For example, a compressible seal is preferred to prevent liquid and chemicals from entering the vacuum chuck 2124 during the bead removal process. It is better to include a wafer lifter 2130 in the wafer holder fitting 2104, which helps to transfer the wafer from the robot blade of the automatic changer to the wafer holder fitting 2 104. The wafer lifter 2 1 30, as shown in Figure 14, includes a cross clamp accessory, which can also be used to hold the wafer during the spin-rinse-dry process. The cross clip fitting includes a plurality of cross clips 2138 that extend from the circular base 2136 and a pivot at the end of the arm 2134. The annular base 2136 includes a wall 2137 extending downward and overlapping the upwardly curved wall 2114, which can retain the waste liquid in the container 2102 during processing. The cross clip 2138 includes an upper surface 214. The wafer can be received, and the clamp portion 2 1 42 can clamp the wafer, and the lower portion 2 44. The clamp portion 2142 can be clamped by the centrifugal force when the ▲ piece holder is rotated. Wafer edges. In addition, the wafer lifter 213 includes wafer lifters commonly used in various wafer processing equipment, such as a lifter needle set or a lifter hoop arranged in or around a vacuum chuck or a lifter platform or a lifter ring. The liquid / chemical delivery accessory 2106 includes one or more nozzles 2150 placed on one or more delivery booms 2152. The distribution arm 2152 extends into the side wall of the container ^ page 26 (please read the precautions on the back before filling in this page) Installation · ----.-Order-Disgrace · 513751 V. Description of the invention () 21 〇8, which is connected with the transmission device 2154 in a telescopic manner to change the position of the nozzle 2 丨 50 on the substrate 2122. Due to this extendable dispensing arm, the nozzle position can be directly above the wafer, and the nozzle mouth is aligned with the inside of the wafer to the edge of the wafer, which helps to control the transport of etchant / liquid to the wafer = Edge. In addition, the distribution arm 2 1 52 is fixed on the container side wall 2 08, and the nozzle 2150 is fixed in the container 2102 so as not to interfere with the movement of the upright wafer. Preferably, the / dispensing arm 2152 preferably includes one or more conduits through the dispensing arm to communicate the nozzle 2150 with the etchant source. Several types of nicking agents are known in the art to remove deposited metals such as nitric acid and other commercially available acids. In addition, the nozzles 2 1 50 are communicated via an elastic pipe 2156 passing through the inner duct of the distribution arm 2 52. The nozzle 2150 can be selectively connected to one or more chemical / fluid sources, such as a deionized water source 2 1 6 0 and an etchant source 2 1 6 2 controlled by a computer 2 1 64 according to a program in one or more liquid / chemicals Switch between sources. In addition, the first set of nozzles is connected to a source of deionized water, while the second set of nozzles is connected to an etchant source, and the nozzles are selectively activated to provide liquid to the wafer. The better one is to place another set of lower nozzles 2 1 70 below the wafer, and the better is to vertically position the upper nozzles 2 15 0. The lower nozzle 2 1 7 is selectively connected to the deionized water source 2 16 0 and the contact agent source 2 1 6 2. The liquid delivered by the nozzle 2 1 7 0 is controlled by the controller 2 1 6. Preferably, the nozzle 2 170 transfers the liquid to a peripheral portion on the back of the wafer. It is better to position the lower nozzle 2 1 70 so as not to interfere with the movement of the wafer lifter 2130. The lower nozzle 2170 can also be attached to the transmission 2 1 74 through the arm 2 1 76. The nozzle 2 1 70 can be placed in a telescopic manner on page 27. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ) (Please read the notes on the back before filling out this page.) Il · --- ^ 1— Order · Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 B7 V. Description of the invention on. In addition, the wafer lifter 2 130 does not rotate during processing to avoid disturbing the lower nozzle 2170. The EDR / SRD micro-module 2 2 0 0 also preferably includes a dedicated deionized water nozzle 2 1 7 2 to deliver deionized water to the center portion of the upper surface of the wafer. The more preferred 'nozzle 2 1 50' is intended to supply liquid to the peripheral portion of the wafer at an angle of placement substantially in the tangential direction. Fig. 28 is a schematic top view of an EBR / SRD micro-module, showing a specific embodiment of a nozzle position for removing beads. As shown in the figure, three nozzles 2 150 are placed substantially equidistantly on the inner surface of the container side wall 108. Each nozzle 2 150 is configured to send liquid to the edge portion of the wafer, and the space between the positions is sufficient to allow the wafer to move vertically between the processing position and the transfer position. Preferably, the liquid conveying or spraying mode is controlled by the nozzle shape and the liquid pressure so that the liquid reaches only the selected edge exclusion zone. For example, the etchant is limited to a 3 mm ring portion of the wafer periphery to form a 3 mm edge exclusion zone. The nozzle is positioned to deliver the etchant to the wafer surface at an angle of incidence that suppresses the etchant from splashing when the etchant is in contact with the wafer. Figure 2 9 is a side view of the configuration of the processing wafer 2 1 22 _ nozzle 2 1 50. Preferably, the incidence angle α of the etchant to the wafer is between about 0 and about 45 degrees, and more preferably between about 10 and about 30 degrees. The wafer 2 1 > 2 is rotated during the bead removing process so that the chance of contact between the peripheral portion of the wafer and the etchant is substantially equal. Preferably, the wafer 2 1 22 is rotated in the same direction as the etchant spray pattern to enhance the control of the bead removal. For example, as shown in Fig. 2 the wafer is rotated in a counterclockwise direction (arrow A), which is the same as the counterclockwise direction of the spray mode. The wafer is preferably rotated at about 100 rpm to about 1000 rprn, more preferably at about 500 rpm and about 700 rpm. Effective etch rate (that is, the paper size on page 28 applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) C Please read the precautions on the back before filling this page)) Binding——l · — — Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative 513751 A7 B7 Printed by the Intellectual Property Bureau employee consumer cooperative of the Ministry of Economic Affairs V. Invention description (the amount of copper removed divided by the time taken to remove) and the etching speed of the etchant The speed of the edge contact, the temperature of the etchant, and the wafer rotation speed are related. Such parameters can be varied to achieve the specific results desired. During operation, the wafer 2122 is located on the EBR / SRD micro-module 2200 wafer holder accessory 2104, and the wafer lifter 2130 lifts the wafer on the blade of the automatic converter. The robot blade is withdrawn, and the wafer lifter 2130 lowers the wafer onto the vacuum chuck 2 1 24. At this time, the vacuum system is started to fix the wafer 2122 on it, and the wafer holder fitting 2104 rotates the wafers arranged on the wafer 2150 when the nozzle 2150 transmits the last name to the periphery of the wafer. Preferably, during the bead removal process, the lower nozzles 2 and 70 also convey the etchant to the back of the wafer. Preferably, the deionized water nozzle 2 1 72 transmits the deionized water to the center portion of the wafer during the bead removal process to prevent etching caused by the etchant splashing on the center surface of the wafer. This etching process is performed for a period of time that is predetermined to be sufficient to remove excess deposits on the edges (ie, beads) of the wafer. It is preferred to use deionized water to clean the wafer during the spin-rinse-dry process. Spin-rinse. The drying procedure generally includes 1 sending deionized water to the wafer to rinse the remaining I insecticide on the wafer and drying the wafer at high speed and rotation of the wafer. In the spin-rinsing-drying process, it is preferred that all nozzles 2 150, 2 1 70, and 2 1 72 transfer the deionized water to rinse the wafer while the wafer is rotating. After the wafer is rinsed, the wafer is spin-dried and sent off the EBR / SRD micro-module 2200 for further processing. The EBR / SRD micro-module 220 or the SRD micro-module 23 8 is arranged near the loading station 210 for connecting the loading station 21 and the host 214. Referring again to FIGS. 2 and 3, the main frame 214, as shown in the figure, includes two processing platforms 218 configured to face each other, each processing platform 218 having two processing slots 24o; page 29 This paper is in accordance with the Chinese National Standard (CNS) ) A4 specifications _ (21〇X 297 public love) (Please read the precautions on the back before filling this page) Binding --- 513751 V. Description of the invention (). The host transfer platform 216 includes an automatic transfer host that is configured in the center, and can be used to transfer various substrates on the main frame. Preferably, the machine 242 includes a plurality of automatic robot arms 2402, which can be respectively configured on the main processing platform 218 or the processing platform 218 connected thereto, the SRD platform, the ^ W day θ layer repair platform, and other The ovum is accessed on the processing platform at the 日 日 &. ^ ^ 口. As shown in FIG. 3, the automatic 242 includes two automatic robot arms 2402, the number of which is equivalent to the processing tank 240 on each processing platform king 218. Respective motive arms 4 2 ^ ^ 1 fixed terminal changing device 2404 < to support the wafer when transferring the wafer. Preferably, each of the motive booms 2402 can operate independently of the other booms to facilitate independent chip transfer within the system. In addition, the robotic arm 2402 operates in a connected manner so that when the other robotic arm is retracted, one of the robots is extended. Preferably, the main frame transfer platform 216 includes an elevator automaton terminal operating device 244 on the automatic transfer main body 242, which can invert the wafer from a face-up position to a face-down position for supply and demand A processing tank 240 that processes wafers downward is used. The lift control unit 2404 of the rudder automaton provides rotational movement along the horizontal axis of the terminal operation and longitudinal device 2404 of the elevator automaton. Preferably, when the elevator auto terminal control device 2404 reverses the wafer and changes the wafer, the vacuum air clamp 254 (located at the end of the elevator auto terminal control device 24 04) will clamp the wafer. The elevator automata terminal manipulation device 2404 puts the wafer 234 into the processing tank 240 for face-down processing. The electroplating treatment tank according to the present invention will be described in detail below. Figure 3 shows an automatic transfer host with an elevator automaton. Automatic transfer host 242, as shown in Figure 24, is used to transfer between different platforms on the mainframe platform. Page 30 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the back Please fill in this page again for the matters needing attention) Packing ---; ------ Order · ---- 1 ----- ^ 9—. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 ---- --- B7 V. Description of the invention () Transfer wafer, including processing platform and SRD platform. The automatic transfer host 242 includes a number of automatic robot arms 2402 (two shown), and an elevator automaton 2404 is attached to it as a terminal operating device of the respective motive arm 2402. The lift-off automaton is a terminal control device that is common in ordinary technology and can be added as a wafer automata. For example, the model RR701 is available from Roze Automation, Inc '(Milpitas, California). The automatic transfer host 242 has an elevator automaton as a terminal operating device, which can transport the substrate between different platforms attached to the main frame and reverse the substrate to be transferred to the desired surface orientation, that is, the substrate is processed. The face is turned into a face-down power supply plating process. For example, 'the elevator automaton in the processing tank 240 inverts the substrate processing surface to face down for power supply plating process use, and in other procedures, such as: rotation-rinsing-drying procedure, the substrate processing surface is reversed. If it is better to face upward, the automatic transfer host 242 uses the robot arm 2402 to perform individual automata along the XYZ axis, and uses the elevator automata terminal operating device 2404 to perform a smart reverse substrate rotation. When combined with the elevator automaton 2404 into an automatic transfer host terminal control device, the chip conversion procedure is simpler because the steps of the automatic transfer host to transfer wafers to the elevator automaton can be omitted. Preferably, one or more non-electrical deposition tanks or micro-components are arranged on the seed layer repair platform 2 1 5. A non-electrical deposition tank, referred to herein as a non-electrical deposition treatment (EDP) tank ', performs a non-electrical deposition process. The EDP tank can be located behind the plating system platform 2000, at the end of the substrate entrance. Specific examples show that two EDP tanks can be side-by-side to have higher yields. Page 31 This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 g t) (Please read the notes on the back before filling this page) Order ill · ----- line 0- · Ministry of Economics Wisdom Printed by the Consumer Cooperative of the Property Bureau Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy 513751 A7 ________ B7 V. Description of the invention () Figure 24 is a schematic cross-section of the EDP tank 3010. The EDP slot 3010 includes a bottom 3 0 2, a side wall 3 0 1 4, and an upper cover plate 3 0 1 6 arranged at an angle on the side wall 3 0 1 4 and is opened at the center of the cover plate. Alternatively, a removable top cover (not shown) can be used. The base 3018 is generally arranged at the center of the slot 3010 and includes a base transmission 3020. The base transmission 3020 rotates the base 3018 so that the substrate 3022 mounted thereon rotates between about 10 to about 2000 RPM. The base can be heated to bring the substrate temperature between about 15 ° C and about 100 ° C. (: Better test about 6 (TC ^ the base lifter 3024 lifts and lowers the base 3018. The substrate 3022 can be fixed by a vacuum chuck 3026 mounted on the top of the base 3018. In addition, the base 3018 lowers the substrate 3022 to Position perpendicular to several clamps 3028. The clamps 3028 rotate and clamp the substrate 3022 by centrifugal force, preferably clamped on the edges of the substrate. The base 3018 also includes a downwardly-shaped annular cover plate 3030 having a diameter greater than An annular cover plate 3032 configured in combination with the bottom of the slot 30 10. The two circular cover plates 3030 and 3032 overlap so that the liquid in the slot 3010 does not contact the base 3018 and related components. At least the bottom of the 3010 slot is provided with A liquid outlet 3034 so that the liquid can flow out of the tank. J There is a non-electrical deposition liquid flowing in the first duct 3306, which is connected to the tank 30i. The duct 3036 can be a hose or a conveying pipe , Hoses, or other liquid-containing juvenile tubes. The brown electric deposition liquid valve 303 8 controls the flow of non-electrical deposition liquid, and the valves disclosed herein can be needle valves, ball valves, butterfly valves, or other types Valves and can include valve actuators such as solenoids The non-electric deposition liquid container 3044 is connected to a valve 3038 which can be controlled by the controller 3040. Several valves 3042a-f are connected to various chemical sources (not shown), and the valves 3042a-f can be controlled by the controller respectively. Controlled by 3040. Better, non-electrolytic deposition solution; page 32 This standard applies to China National Standard (CNS) A4 (210 X 297 meals) ----------- pack --- --- 1--Order ---- ^ ------ (Please read the notes on the back before filling out this page) 513751 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () The system is mixed according to the amount of each required to be deposited on the substrate 3022 and will not react in the sedimentation, so as to avoid non-electrical deposition in the catheter 300 and related components in advance. Valves 303 8, 3042a-f Therefore, it is better to be located near the proximal end of the groove 3010. When the substrate is arranged at a lower position, the first conduit 3036 is connected to the first liquid inlet 3046 arranged above the substrate 3022, preferably It is connected with the hinge member 3048, such as ball and socket joint and sleeve joint, for the inlet 3046 to run and for adjusting the inlet 3046 in The angle in 30. The first nozzle 30 ^ 0 is connected to the end of the inlet 3046 and faces the base 3018. The liquid is generally delivered in a spray mode, depending on the specific nozzle of the desired spray mode, but Including fan-shaped, spray-shaped, conical and other modes. Preferably, the nozzle 3050 is located outside the periphery of the substrate 3022 so as not to hinder the lifting and lowering of the substrate. In addition, the nozzle 3050 can be connected to the groove 3 〇 丨 〇 In the periphery, the transmission device I (not shown) drives the nozzle 3050 to move laterally, vertically, or a combination thereof, so as to free up the vertical space for the substrate 3022 when lifting and lowering the substrate. The second duct 3052 is similar to the < first duct and related elements, and is configured to pass through the side wall 3 0 1 4. The k-th second conduit 3 05 2 provides a passage for a rinsing liquid (such as deionized water or alcohol), which is used to rinse the substrate 3 022 after non-electrodeposition. The second inlet-3 054 is connected to the second duct 3052, and the second nozzle 3056 is connected to the second inlet 3054. The hinge member 3059 is engaged with the second inlet 3054 and can move and adjust the angle of the inlet to the slot 3010. The second valve 3058 is connected to the second conduit 3052, and preferably controls the timing and flow of the flushing liquid. The second conduit also communicates with a low-concentration acid or other fluid source and a valve that controls the fluid. In addition, the acid supply can be connected to another conduit (not shown). Typical liquid page 33 ^ Paper size is applicable to the national standard (CNS) A4 (210 X 297 mm) ----------- install ------ ^ --order --- ------- (Please read the notes on the back before filling this page) 513751 Α7 Β7 V. Description of the invention (including: salt phthalate, sulfuric acid, phosphoric acid, hydrofluoric acid, or other non-electrical type Shen (please read the precautions on the back before filling this page) The liquid or liquid that is used to coat the surface of the substrate before the plating process to prevent oxidation reaction and contamination by other pollutants before the plating process. Therefore, it can be transferred for subsequent processing, such as money, which is in the state of ^ wet, = to minimize oxidation reactions and other pollutants. Therefore, the ability to transfer while wetting can be more enhanced if the substrate After the non-electrical deposition process, it maintains a face-up position for a period of time. The controller, 3040 controls each valve, and therefore the timing and flow of each liquid is better. The controller 3040 controls substrate rotation, and the base and The substrate placed on its U is raised and lowered better. The controller 300 can be remotely controlled. Shake, for example: a control instrument panel (not shown) or a control room and a piping device controlled by a remote transmission. • The 'automatic machine (not shown) sends the substrate 3022 up to the EDp tank 3010 during operation. A seed layer has been deposited on the material 3022, for example, printed by ρν〇 or imp printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The base 3018 rises and the vacuum chuck 3026 clamps the back of the substrate 3022. The automatic machine withdraws, The motif 3 0 18 is lowered to the processing height. The controller 3 040 opens the valves 3042a-f to send the chemicals into the non-electric liquid container 3044. After the chemicals are mixed, the controller directs the non-electric type The deposition liquid valve 3 03 opens the Jeanne ’s amount of non-electrical deposition liquid from the first inlet 3046 and passes through the first nozzle 3 0 50. Preferably, the base 3 0 1 8 is about 10 to about 5 0 0 RP Μ rotates at a relatively low speed so that the incoming liquid forms a uniform coating on the substrate 3022. The rotation direction can be reversed alternately to apply the liquid evenly on the substrate. Then close the non-electric deposition liquid valve 3 0 3 8. Non-electrically deposited liquid Automatically catalyzed on the seed layer deposition and on the bonding gap of the previous deposition layer Page 34 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 513751 A7 B7 Employees ’Intellectual Property Bureau, Ministry of Economic Affairs Cooperative print 5. Description of the invention (Coated layer, which can form a more complete and uniform coating on the aspect with a higher aspect ratio. Preferably, the non-electrolytic deposition process deposits on most substrates are between About 100A to 400A. The second 3058 is turned on to allow the flushing fluid to flow through the second conduit 3052 and sprayed on the substrate 3022 through the first 3030. Preferably, the pedestal 3o8 rotates at a relatively fast speed of about 100 to about 500 RPM, and the rest of the non-electrical deposition liquid flows out from the substrate 3022 and is discharged through the outlet 3034 and discarded. The substrate may be coated with an acid or other coating liquid. In some cases, the base 3018 can be rotated at a higher speed of about 500 to about 2000 RPM to spin dry the substrate 3022. The base 3018 stops rotating and raises the substrate 3022 above the edP tank 3101. The vacuum chuck 3026 releases the substrate 3022, and the substrate is retracted into the plating bath by an automatic machine for other processing. FIG. 6 is a cross-sectional view of a plating treatment tank 400 according to the present invention. The plating treatment tank 400 (see Fig. 6) is the same as the plating treatment tank 240 (see Figs. 2 and 3). The processing tank 4 00 generally includes a head end fitting 41o, a processing kit 42o, and an electrolyte collector 440. Preferably, the electrolyte collector 44 is fixed above the opening 443 of the main body 214 and the body 442 (at the boundary of the position of the processing kit 420). The electrolyte collector 440 includes an inner wall 446, an outer wall 448, and a base '447 which connects the two. The electrolyte outlet 449 is configured to pass through the electrolyte collector 44 and bottom 447 and is communicated with the electrolyte replenishing system 220 (see FIG. 2) by a hose, a hose, a delivery pipe or other liquid transport connection. The head end fitting 4 10 is mounted on the head end fitting rack 452. The head end accessory frame 452 includes a fixed frame 454 and a cantilever beam 456. The fixed frame 454 is installed on the body 442 of the main frame 214, and the cantilever beam rod 456 is from the fixed frame 454. Page 35 This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) ^ --- Γ- ----- ^ --- ^ ------ (Please read the notes on the back before filling out this page) 513751 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Top Shao The portion extends to the side. Preferably, the fixed frame 4 5 4 can rotate along the vertical axis of the fixed frame to rotate the head end fitting 4 1 0. The head end fitting 4 10 is attached to a mounting plate 460 disposed at the end of the cantilever beam 456. The lower end of the cantilever beam rod 456 is connected to a cantilever beam transmission 457 mounted on a fixed frame 454, such as a pneumatic cylinder. The cantilever beam transmission 457 causes the cantilever beam 456 to pivot around the joint of the cantilever beam 456 and the fixed frame 454. When the cantilever 丨 beam transmission 457 is withdrawn, the gib beam 456 removes the head end fitting 410 from the treatment set 420 and frees it from the electroplating treatment tank 400 and / or places the treatment set 420 Required space. When the cantilever beam transmission 457 is extended, the cantilever beam 456 moves the head end fitting 410 toward the processing set 4 2 0 and places the wafer in the processing position on the head end fitting 4 1 0. The head end fitting 4 1 0 generally includes a wafer holder fitting 4 5 0 and a wafer fitting transmission 458. The wafer accessory transmission 458 is mounted on the fixed plate 46o 'and includes a head end accessory handle 462 extending downwardly through the mounting plate 460. The lower end of the head end fitting handle 462 is connected to the wafer holder fitting 45 to place the wafer holder fitting 450 'in the processing position and the wafer loading position. The wafer holder accessory 450 generally includes a wafer holder 464 and a cathode ring 466. FIG. 7 is a cross-sectional view of a specific embodiment of the cathode ring 466 of the present invention. i In general, the ring 466 includes a ring-shaped body on which several conductive members are disposed. The mounting body is made of insulating material to electrically separate several conductive members. The body and the conductive member together form an incompatible inner substrate seating surface, which can support the substrate and provide current to it during processing. Refer to FIG. 7 for details. Generally, the connecting ring 4 6 6 includes a plurality of conductive members 765 at least partially disposed in the ring-shaped insulating body 770. Insulation body 77〇 has a convex 'Page 36 When this paper ruler _ home standard specifications (210 X 297 public love) (Please read the precautions on the back before filling out this page)-installed -------- --Order ~ ---, ----- line | 513751 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The substrate seating surface 768 is located below the flange 762, so that the flange 762 and the substrate seating surface 768 are on an offset, substantially parallel plane. Therefore, the flange 762 can define the first plane, and The base seat surface 768 defines a second plane parallel to the first plane, wherein the shoulder 764 series is disposed between the two planes. However, the joint design of FIG. 7 is only for demonstration. In other specific embodiments The shoulder 764 may be a steeper angle (including a substantially right angle) so as to be substantially perpendicular to the flange 762 and the substrate seating surface 768. In addition, the collar 466 may be substantially flat to exclude the shoulder 764. However, For the following reasons, the preferred embodiment still includes the shoulder portion 764 or its modification in Fig. 6. The conductive member 765 is made up of several convex parts. The outer electrical contact piece 780 arranged in a ring shape on the edge 762, several internal electrical contact pieces 772 arranged on the base seat surface 768 portion, and several embedded conductive connectors 776 (connecting the pieces 772 and 780 to each other). The conductive members 765 are separated by an insulating body 77 °, which can be made of plastic, such as polyvinylidene fluoride (PVDF), perfluoroalkoxy resin (PFA), TeflonTM, or TefzelTM or Any other kind of insulating material, such as aluminum oxide (Al203) or other ceramics. The outer contact piece 780 is connected to a power source (not shown) to transfer current and electrical base to the inner contact piece via connector 776 during processing The inner contact piece 772 is in contact with the peripheral part of the substrate to supply current and voltage to the substrate. Therefore, the conductive member 765 is a miniature circuit that is energized with the substrate during operation. Low resistance and high conductivity and electroplating The effect is directly related. In order to ensure low resistance, the conductive member 765 is made of copper (Cu), platinum (pt), rhenium (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel or other conductive materials. The maker is better. Also-page 37 ( Matters to read the back of the note and then fill in this page) - fitted ---'--- * - Order · ---.-- I 1

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () The guide member 765 can be coated with conductive material to cause low resistance and low contact electricity. Therefore, the guide member 7 6 5 can be, for example, copper (copper) The resistance is about 2 X 1 0 揋) and coated with platinum (the resistance of platinum is about 10.6 X 10 · 8 揋). On conductive base materials such as stainless steel, molybdenum, and Ti, coatings such as nitride (TaN), titanium nitride (TiN), rhodium (Rh), Au, Cu, or Ag can also be used. 772, 780 are units that are individually engaged with the conductive connector 776, so the contact pieces 772, 780 may contain one material (for example, Cu) and another, for example, a conductive member 765, such as stainless steel. Either or both of the contact pieces 772 and 180 and the conductive connector 776 may be coated with a conductive material. In addition, the plating repeatability deteriorates due to the influence of the oxidation reaction (which acts as an insulator). It is preferable that the inner contact sheet 772 contains an anti-oxidation material, such as: pt, Ag, or Au. In addition to the application, the total resistance of each circuit will vary with the geometry or shape of the inner contact piece 772 and the contact ring 466. Due to the surface roughness of the inner contact sheet 7 7 2 and the substrate seating surface 7 6 8, such factors define the compressive resistance, Rcr, at the air interface between the two. Generally, as the strength of the force increases, its appearance and area increase. Therefore, the appearance area is inversely proportional to the value of r, so increasing the appearance area decreases the Rcr. Therefore, in order to minimize the total resistance, it is better to use the maximum force. Because the substrate is damaged under excessive force and the pressure caused by it, the maximum force during operation is limited by the production strength. However, because the pressure is related to both the force and the area, the maximum force that can be sustained also depends on the geometry of the inner contact piece 772. Therefore, although the contact piece 772 may have a flat upper surface as shown in FIG. 7, other useful shapes may be used. For example, the better two forms Page 38 ▲ The paper is applicable to China National Standard (CNS) A4 (210 X 297 public love) (Please read the precautions on the back before filling this page)

513751 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The description of the invention () Figures 8 and 9. Figure 8 shows a knife-shaped edge contact, and Figure 9 shows a hemispherical contact. Those skilled in the art know that other useful shapes can also be used. In the Ney Contact Manual, by Kenneth E. PitnCy, The J.M. Ney Company, 1 973, there is a more detailed description of the relationship between the geometry, force and resistance of the contact piece. The full text is incorporated herein by reference. The description of the device 776 depends on the specific number of contact pads 772 that are desired (see FIG. 7). As far as a 200 mm substrate is concerned, it is preferable to use at least 24 connectors 776 to be equidistantly placed on 360 1. However, when the number of connectors reaches the critical number, it will adversely affect the mating properties of the substrate and the ring 466. Therefore, although more than 24 connectors 776 can be used, the contact force consistency may be reduced, depending on the shape of the contact piece 772 and the hardness of the substrate. Similarly, although less than 24 connectors 776 can be used, the current limitation and local privacy increase, resulting in poor plating results. Since the scale conditions of the present invention can be easily changed depending on the specific application (for example, a 300 mm substrate), the optimum transmission can be easily provided for various scales and specific embodiments. As shown in FIG. 10, the substrate seat surface 768 includes a gasket 782 "arranged independently on the insulating body 77o and extends radially inward to the inner contact piece 772 to define the inner diameter of the ring 466. Independent gasket 782 is preferably extended upward to slightly higher than the inner contact piece 7 72 (for example: several millimeters), and it is better to include elastomers, such as Viton, TeflonTM, buna rubber, etc. Insulator body 770 It can also contain the same elastomer as the material used for the independent pad 782. In the latter's specific embodiment, the independent view 7 8 2 and the insulating body 7 7 〇 can be used on the entire page. Fresh (CNS) A4 Specification (21〇x 297 Meals) '' (Please read the precautions on the back before filling this page)

• I —L n I I I order .----

Line I 513751 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (combined, that is, a single piece. However, it is better to separate the independent pad 782 from the insulated body 770 so that it can be easily removed It is removed for replacement or cleaning. Fig. 10 shows a preferred embodiment of a separate pad 782. The unique view is that it is completely seated on the insulating body 7 70. Figs. 8 and 9 show another type. Specific embodiment. In the latter specific embodiment, the insulating body 770 is made slightly deviated so that the upper surface of the connector 776 is exposed and the independent pad 782 is disposed thereon. Therefore, the independent pad 782 and the Part of the connector 776 contacts. In this design, less material is used for the inner contact piece 772, which can reduce the cost of materials. For example, when the inner contact piece 772 contains gold. Those skilled in the art can understand and understand from other specific embodiments. It does not depart from the scope of the present invention. During the process, the independent gasket 782 is kept in contact with the peripheral portion of the plating surface of the substrate, and after compression, a gasket is formed between the other cathode ring 466 and the substrate. The gasket can prevent the electrolyte from touching the edges and the back of the substrate. As mentioned above, it is necessary to keep the contact surface clean from the south to achieve the plating repeatability. The previous joint design did not provide a <stable plating effect. The shape will change with time. The ring of the present invention can eliminate, or substantially minimize, the deposits that may accumulate on the inner contact piece 772, and change its characteristics to plate the surface on the substrate. Highly repeatable lifetime, stability, and uniform power layer. Μ Figure 11 is a simplified schematic diagram 'It is a possible circuit configuration of the ring 466. In order to provide a uniform current between the conductive members 765 Distribution, the external resistor 700 is in contact with each conductive member 765 in series. The resistance value (expressed as Rext) of the external resistor 700 is much higher than the resistance of any other component on the circuit. Page 40 China National Standard (CNS) A4 specification (210 X 297 mm (please read the precautions on the back before filling this page) • I tl · tn eL nn Order——l · ----

MJ / M A7

(Please read the precautions on the back before filling this page.) Tian. Ν, The circuit that passes through each conductive member 7 6 5 is represented by the resistance of each component in series with the power supply 702. ^ Indicates the resistance of the electrolyte, which generally depends on the distance between the anode and cathode rings and the chemical composition of the electrolyte. Therefore, ra represents the resistance of the electrolyte near the substrate plating surface 754 ° Rs represents the resistance of the substrate plating surface 754, and Rc represents the resistance of the cathode conductive member 765 plus the interface of the inner contact piece 772 and the substrate plating layer ^ The resulting compression resistance. Generally speaking, the resistance value (REXT) of the external resistor is at least Σ R (where Σ R is the sum of RE, ra, Rs and Rc). Preferably, the resistance value (Rm) of the external resistor is much higher than Σκ, so it can be omitted and the resistance of each series circuit is about rex. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Generally speaking, the power supply is connected to all of the cathode contact rings 466 outside the contact piece 78, forming a parallel circuit through the internal contact piece 772. However, since the internal contact pieces 7 72 are different, the resistance between the internal contact piece and the substrate interface varies, so the more current is at the lowest resistance point, the more electroplating it generates. However, after an external resistor is connected in series to each conductive member 7 65, the current value or the number of currents flowing through each conductive member 7 65 can be controlled mainly by the value of the external resistor. Therefore, the electrical difference between the inner contact pieces 772 will not affect the current distribution on the substrate, and the uniform current density will make the plating thickness on the surface of the plated plate uniform. External resistors also provide uniform current distribution to different substrates in the processing sequence. Although the coupling ring 466 designed by the present invention can avoid the formation of deposits on the inner contact piece 772, the resistance of the substrate-contact piece interface will increase when performing various substrate plating cycles, and finally reach an unacceptable level. The electronic sensor / alarm 704 can be connected to the external resistor 700 to monitor the voltage on the external resistor. Page 41 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

513751 V. Description of the invention () / current to be solved. When the voltage / current of the external resistor 700 exceeds the preset operating range, it means that the resistance of the substrate-contact sheet is high, and the sensor / alarm 704 starts the correction test I, for example, stops the plating process until the operator corrects this problem. . In addition, each conductive member 765 can be connected to a different power source and controlled and monitored separately to form a uniform current distribution on the substrate. A smart system (VSS) can also be used to regulate the current. vss generally includes processors and any devices commonly used in the art to supply and / or control current, such as variable resistors, discrete power supplies, and so on. When the physical and electrical properties of the inner contact piece 772 change gradually, vss will process and analyze the data it receives. vss compares the data with the previous set value and then changes the current and voltage appropriately to perform a uniform deposition reaction. Figure 18 is a perspective view of another embodiment of a cathode ring. The cathode ring 1 800 in FIG. 18 includes a conductive metal or metal alloy, such as stainless steel, copper, silver, gold, platinum, titanium, rhenium, and other conductive materials, or a combination of conductive materials, such as platinum. Stainless steel. The cathode ring 1 includes an upper mounting portion 181181 for fixing the cathode ring to the wafer holder fitting, and a lower substrate receiving portion 1820 for receiving a substrate. The substrate receiving portion 1 820 includes a ring-shaped substrate seating surface 1 822 on which a plurality of contact pieces or punches 1 &amp; 24 are arranged (preferably distributed at an equal distance). When the substrate is placed on the substrate seating surface 1822, the contact sheet 1 824 substantially contacts the peripheral area of the substrate to provide electrical contact to the penite seed layer on the substrate deposition surface. Preferably, the contact sheet 1824 is coated with an oxidation-resistant precious metal layer, such as platinum or gold. Cathode contact% of unshielded surface (except for the surface where the contact sheet is in contact with the substrate) Qi Jia Zhe is treated to provide a hydrophilic surface or coated with a hydrophilic material. Page 42 This paper rule @@ __ is) A4 specifications (210 X 297 mm) (Please read the notes on the back before filling out this page) n Order ---- '· ----- Line i Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 _ B7 5 2. Description of the invention () Both hydrophilic materials and hydrophilic surface treatments are known techniques. Millipore Corporation (in Bedford, Massachusetts) provides a hydrophilic surface treatment. The hydrophilic surface can greatly reduce the foaming of the electrolyte on the surface of the cathode ring, and help to remove the electrolyte from the cathode ring smoothly after removing the cathode ring in the plating bath or the electrolyte. After forming a hydrophilic surface on the cathode ring to promote the outflow of the electrolyte, the plating defects caused by the residual electrolyte on the cathode ring can be greatly reduced. The present inventors have also studied the possibility of using a hydrophilic treatment or coating to reduce residual electrolyte foaming on the cathode ring in specific examples of the cathode ring, and cause the electron microscope defect of the substrate in subsequent processing. Other types of connection ring designs can also be applied to the electroplating treatment tank according to the present invention, for example, US Patent Application 09 / 201,486 entitled &quot; Cathode Contact Ring For Electrochemical Depositon &quot; in the Common Assignment and Common Application, application date November 30, 1998 The contact ring design described in the text is incorporated herein by reference. With reference to Figures 12 and 12A, the wafer holder 464 is preferably positioned above the cathode ring 466, and contains a pouch bag accessory 470 that can apply pressure to the back of the wafer. To ensure good electrical contact between the plated surface of the wafer and the female pole ring 466. The inflated pouch accessory 470 is arranged on the wafer holder plate 832. The pouch 836 is arranged on the lower surface of the i-piece holder 舨 832, so It is opposite to and adjacent to the cathode connection point 466 with the substrate 82 1 therebetween. The fluid source 838 supplies fluid (ie, gas or liquid) to the bladder 836 to expand the bladder 836 to different angles. Figures 12, 12A And 13 will discuss the bag accessory 470 in detail. The wafer holder plate 832 is substantially disc-shaped, and the lower surface has a circular recess 840 and a vacuum nozzle 841 arranged in the center. 832 has one or more entrances. Page 43 This paper is sized for China National Standard (CNS) A4 (210 X 297 mm). ------------ Install --- (Please read the back first Please note this page before filling in this page) * II- ·! ------ line # · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention ( 842 and form a wider ring-shaped mounting channel 843 and ring-shaped recess 840. The easy-to-remove hose 844 is connected to the inlet 842 by the fluid source 83.8 for the purpose of conveying liquid. It is better to selectively supply pressure or create a vacuum on the back of the substrate 821). The extraction system 8 5 9 includes a pump 845, a switching valve 847, and a vacuum ejector 849 (commonly referred to as a nozzle) as shown in FIG. ). Vacuum ejectors suitable for the present invention are commercially available from SMC Pneumatics, Inc., Indianapolis, Indiana ° The pump 845 can use a commercially available compressed gas source and is connected to one end of the hose 851, and the end of the hose 851 is connected To the vacuum nozzle 841. The hose 851 is divided into a pressure line 853 and a vacuum Line 855 (with a vacuum ejector 849 configured therein). The fluid flow is controlled by a switching valve 847 and is selectively switched between the pump 845 and the pressure line 853 and the vacuum line 85 5. The better is that the switching valve is closed The device restricts the flow of liquid in any direction within the hose 851. A shut-off valve 861 is arranged in the hose 851 to prevent liquid from flowing backward from the pressure line 85 5 into the vacuum ejector 849. The desired fluid flow direction is indicated by arrows. Those skilled in the art can understand other designs without departing from the spirit and scope of the present invention. For example, when the fluid source 83.8 supplies gas, it can be connected to the hose 851 to eliminate the use of a separate compressed gas source, namely the pump 845. Therefore, where the 7th, the separate gas source and vacuum pump can apply pressure and vacuum on the back. Although it is preferred that both the back pressure and the back vacuum are formed, the simplified embodiment may include a pump that can only cause back vacuum. However, in the following, it will be explained that the back surface pressure facilitates uniform deposition during processing. Therefore, it is preferable to include a vacuum injector and a switching valve as described above. Referring to Figure 12 and Figure 4, ring-shaped recesses 840 are substantially configured with ring-shaped divergences. Page 44 The paper size is applicable to China National Standard (CNS) A4 specifications (21 × 297 mm) -------- ----------- Order ------- (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 -----— ---_ ^ z___ V. Description of the invention () Tube 846. The manifold 846 includes a mounting bar 852 disposed between the inner shoulder 848 and the outer shoulder 850. The mounting crossbar 852 is inserted at least partially into the annular mounting channel 843. There are several liquid outlets 854 on the manifold 846 that can communicate with the inlet and the pouch 836. A sealing gasket 837 (eg, a seal ring) is arranged in the annular manifold channel 843 side by side with the inlet 842 and the outlet 854, and is fixed by the wafer holder plate. Enough to ensure a hermetic seal. The manifold 846 may be fixed to the wafer holder plate 832 using a general bolt (not shown) such as a screw and drilling a threaded hole (not shown) in the manifold 846 and the wafer holder plate 832. Referring to FIG. 15, there is shown a section of the pouch 836, which is essentially an elongated and semi-tubular material with ring-shaped mouth gaskets 856 or nodes on each side. In Fig. 12A, a mouth gasket 856 is disposed on the inner shoulder 848 and the outer shoulder 850. The manifold 846 (slightly smaller than the annular recess 840, such as several millimeters) compresses part of the bladder 836 against the wall of the annular recess 840. Therefore, the manifold 846, the bladder 836, and the annular recess 840 together form a fluid-proof seal. In order to prevent fluid loss, the preferred bladder 8 3 6 should contain a certain non-permeable fluid material, such as silicone, or any equivalent elastomer that is chemically inert to the electrolyte and has relatively elasticity. If necessary, a matching cover 8 5 7 can be added above the pouch 8 3 6, as shown in FIG. 15, and fixed with an adhesive or a heat adhesive. The preferred cover i 57 is preferably comprised of an elastomer, such as vitonTM, buna rubber or the like, for example, reinforced with KevlarTM. In one specific example, the material of the lid 857 and the pouch 836 is the same. The cap 857 has its specific function when the pouch 8136 is easily broken. In addition, the thickness of the pouch 836 during manufacture can be increased to reduce puncture. Preferably, the unshielded surface (if not covered) of the pouch 836 and the unshielded surface of the lid 857 can be coated or treated to form a hydrophilic surface. Page 45 This paper applies the Chinese National Standard (CNS) A4 specification. (210 X 297 mm) ^ 9 ^ if --------- CPlease read the notes on the back before filling out this page} Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economy (Such as the surface of the cathode ring) to promote dripping and remove the remaining electrolyte after the head end fitting is raised above the processing tank. The exact number of entrances 842 and exits σ 854 can be changed depending on the particular application without departing from the scope of the invention. For example, there are two inlets shown in FIG. 12, each with its corresponding outlet, and another specific embodiment uses a single-liquid inlet to supply liquid to the pouch 836. During operation, the substrate 821 is brought into the container body 802 and fixed under the wafer holder plate 8 J 2 ^. This is to start the extraction system 1 59 to evacuate the nozzle 841 between the substrate 8 2 1 and the wafer support plate 832 to generate a vacuum state. The pouch 836 is then inflated by supplying liquid (e.g., air or water) from the fluid source 83 via the inlet 842. The liquid is sent into the bladder 836 through the manifold outlet 854, and the substrate 821 is evenly squeezed toward the contacts of the cathode ring 466. Then, a plating process is performed. Then, the electrolyte input treatment kit 42 is directed toward the substrate 821 so as to be in contact with the exposed surface of the substrate 820 surface. The power supply provides a negative bias to the base clock surface 82 through the cathode ring 466. When the electrolyte flows through the substrate plating surface 820, the ions in the electrolyte are attracted to the surface 820 and deposited on the surface 820 to form a desired thin layer. Due to its elasticity, the pouch 8 3 6 can cooperate with the rough chain surface on the back of the substrate and the cathode ring 4 &amp; 6 contacts to extract air to relax the gap with the conductive cathode ring 466, and the coordinating pouch 836 can prevent the electrolyte from contaminating the back surface 82 1 of the substrate. It is to establish a fluid-proof seat on the periphery of the back surface 82 1 of the substrate. Once expanded, the uniform pressure can be transmitted downwardly toward the cathode ring 466 so that the forces f at the interfaces of the substrate 821 and the cathode ring 466 are substantially equal. The applied force may vary with the pressure of the fluid source 838. In addition, the effectiveness of bag accessories 470 Page 46 This paper size applies Chinese National Standard (CNS) A4 specifications ⑽χ 297 public love) (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 V. Description of the invention (It depends on the surface configuration of the cathode ring 466. For example, the group shown in Figure i 2 has several discrete contact points, and the cathode ring 466 can also be a continuous surface. Since the force applied by the capsule '836 to the substrate 821 is variable, the current supplied by the adapter ring 466 can be adjusted. As described above, the cathode adapter 466 can be &gt; formed into an oxide layer It is used to limit the current. However, the increase in the pressure of the bladder 8 3 6 will cause the oxidation reaction to offset the current limitation. When the pressure is increased, the ductile oxide layer will conform, and the cathode ring 466 will Excellent contact with the substrate 82 1. The effectiveness of the pouch 8 3 6 can be further improved by changing the shape of the cathode ring 466. For example, the geometry of the knife-shaped edge is better than the ordinary circular edge Or flat edges are more likely to penetrate the oxide layer. In addition, 'the formation of a fluid-proof gasket from an expanded bladder 836 enables the pump 845 to maintain a true backside pressure or pressure before, during, and after the process in a selective or continuous manner .but, Yu Jianzhi knows that the bag 836 can maintain the vacuum state on the back without continuous extraction during processing, so generally the pump 845 is operated to maintain the vacuum state only when the substrate is transferred back and forth in the electroplating treatment tank 400. Therefore, &gt; At the time of the above-mentioned inflation bag 8 3 6, the extraction system 8 5 9 is also deactivated at the same time to release the true 2 state on the back side, for example, the OFF position on the opposite switching valve 847 is selected. The vacuum state can be quickly and gradually slipped gradually. Lowering and deactivating the extraction system 8 5 9 ° Slowly sliding can control the inflation bag 8 3 6 and at the same time the back vacuum state is lowered (conversion. This conversion can be controlled manually or by computer. As mentioned above 'Continuous on the back when inflating the pouch 836 It is not necessary to draw a vacuum. 'It may cause the substrate 820 to bulge or bend, which may lead to undesired deposition results. However, it is necessary to apply pressure on the back of the substrate 820 for the substrate to be processed. National Standard (CNS) A4 Specification (210 X 297 Public Love) ------------ · Installation ------ 1 丨 Order · ----.----- Line f Please read the notes on the back before filling out this page.) Printed by Fei Cooperative 513751 A7 ___________ 5. Description of the invention () The material produces a "bow-shaped" effect. The inventor found that bowing leads to an excellent deposition effect. Therefore, the extraction system 859 can selectively provide the back of the substrate Vacuum or pressure. For 200mm wafers, it is better to bow the substrate with a pressure of up to 5psi on the back. Because the substrate usually has a certain degree of flexibility, pressure on the back will cause the substrate The arcuate shape or convex shape compared to the overflow of electrolyte flow. The degree of the arcuate shape can be changed according to the pressure provided by the extraction system 8 5 9. Those skilled in the art can understand other specific embodiments proposed by the present invention. For example, although the preferred pouch 8 3 6 shown in FIG. 12A has a surface sufficient to cover a small portion of the surrounding area of the back of the substrate (the diameter is substantially equal to the cathode contact ring 466), the pouch accessory 470 does not have to be shape. Therefore, the bladder fitting can use more non-permeable fluid material to support the increased surface area of the substrate 82 1. Fig. 19 is a cross-sectional view of a portion of another embodiment of a wafer holder assembly. This different wafer holder accessory 1900 contains a pouch accessory 470. As mentioned above, an inflatable pouch 836 is attached to the back of the intermediate wafer holder plate 190. Preferably, a part of the expandable pouch 836 is sealed on the back surface 1912 of the intermediary wafer holder plate 1910 with an adhesive or other adhesive material. Intermediate wafer holder plate 1 9 1 0 The front side 1 9 1 4 is used to receive the wafer or substrate to be processed 821 v and is arranged in the annular groove 1 9 1 8 on the intermediary wafer holder plate 1910 front side 1914 The elastic sealing ring 1 9 1 6 touches the peripheral part of the back of the chip. The elastic sealing ring i 9 1 6 can seal the wafer back and front sides of the intermediate wafer carrier plate. The preferred intervening wafer holder plate includes several drill holes or holes 1920 passing through the plate, enabling communication with the vacuum nozzle 8 4 1 to help apply a vacuum suction to the wafer to fix the wafer to the wafer holder. . According to the wafer holder accessories Page 48 This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 -___ B7 V. Another specific embodiment of the invention (), the inflated pouch is not in direct contact with the wafer to be processed ', so the cutting is greatly reduced when transferring the wafer Or damage the possibility of inflatable bags. The elastic sealing ring 1 9 1 6 is preferably coated or treated to form a hydrophilic surface in contact with the wafer (such as the above-mentioned cathode ring surface), and the elastic sealing ring 1 9 1 6 can be replaced as needed to ensure the wafer Have proper contact and tightness. Other bag systems are used in electroplating tanks according to the present invention, such as the bag system described in US · Patent Application 09 / 201,796 entitled '' Inflatable Compliant Bladder Assembly, Application date is November 30, 1998), which is hereby incorporated by reference in its entirety. Fig. 25 is another specific example of the processing head end fitting, which has a rotary head end fitting 24 1 0. The preferred rotary transmission device is disposed on the cantilever beam boom and is attached to the head end fitting to facilitate the rotation of the head end fitting when processing the wafer. The swivel head end fitting 2410 is mounted on the head end fitting rack 2452. The alternative head-end accessory rack 2452 and the rotary head-end accessory 2410 are mounted on the main frame ′ similar to the head-end accessory rack 452 and the head-end accessory 4 10 of FIG. 6 described above. The head end accessory frame 2452 includes a fixed frame 2454, a frame top cover 245 5 and a cantilever beam rod 24 56. The fixing frame 2454 is mounted on the main frame 214 body, and the top cover i 2455 covers and covers the top of the fixing frame 2454. Preferably, the fixing frame 454 is rotated around the vertical axis of the stent (as shown by the direction of arrow A 2) to rotate the head-end accessory frame 2452. A cantilever beam 2456 extends from the upper portion of the fixed frame 2454 to the side, and is pivotally connected to the frame top cover 2455 at a pivot joint 2459. A fixed head guide 2460 at the end of the cantilever beam rod 2456 is attached with a rotary head end fitting 2410. The fixed guide plate 2460 guides the head end fitting 2410 for vertical transportation. Page 49 The paper size is applicable to the Chinese National Standard (CNS) A4 (21〇x 297 mm) I ί ϋ ί l · — n 1: 0- ·- i an II-· ϋ ϋ I ϋ I (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 ----- B7 V. Description of Invention () OK. On the top of the fixed guide plate 2460 is a head lifter 245 8 for vertical displacement of the head end fitting 24 1 0. The lower end of the cantilever beam rod 2456 is connected to the handle 2453 of the cantilever beam rod transmission device 2457 (for example, a pneumatic cylinder or a lead screw transmission device) installed on the fixed frame 2454. The cantilever beam transmission 2457 makes the cantilever beam 2456 surround the joint point 2459 between the cantilever beam 2456 and the rack top cover 2454 to perform an = axis rotation action (shown in the direction of arrow A2). When the cantilever beam transmission "η", the cantilever beam 2456 removes the head end fitting 241〇 from the processing set 42o to make room for removal and / or replacement of the processing set 42 in the plating treatment tank 240. Required space. When the cantilever rod drive 2457 is extended, the cantilever rod 2456 moves the head end fitting 24 1O to the processing set 42 0 to place the wafer in the processing position of the head end fitting 24 1 0. Rotate The head-end fitting 2410 includes a rotation transmission device 2464, which is connected to the fixed guide plate 2460 and slides. The handle 2468 of the head lift transmission device 2458 passes through the lifting guide 2466 attached to the body of the rotation transmission device 2464. A better handle 2468 is a factory-guided screw-type handle, which can move the lifting guide between various vertical positions (such as the direction of arrow A3). The rotary transmission 2464 is connected to the wafer holder accessory 245 through the handle 2470 and rotates the wafer holder. Piece 2450 (as in the direction of arrow A4). The wafer holder fitting 2450 includes a pouch fitting, such as the specific examples of Figures 1 2-1 5 and 19 above, and a cathode ring, such as Figures 7 -1 0 and 18 above. Specific embodiments The wafer rotation during the plating process generally improves the deposition effect. The better one is that the head end fitting is rotated at about 2 rpm to about 20 rpm during the key processing. The head end fitting is lowered to place the wafer. In the processing tank and on page 50, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) -------------------- line (please (Please read the notes on the back before filling this page) 513751 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Electrolyte contact and removal of the chip from the electrolyte in the processing tank when the head end fitting is raised At the same time, the head end fitting can also be rotated. When the head end fitting is raised from the processing tank, the head end fitting should preferably be rotated at a high speed (that is,> 20 rPm) to promote the removal of the residual electrolyte on the head end fitting. In specific implementation, the present invention has improved the uniformity of the deposited layer to less than about 2% (that is, the maximum error of the thickness of the deposited layer is about 2% of the average thickness of the layer), and the uniformity of the general standard plating process is the best and About 5.5%. But, but in some cases head-end Parts do not have to be rotated to achieve uniform plating deposition, especially when the plating process uniformity (such as electrolyte chemicals, electrolyte flow, and other variables) can be adjusted to achieve uniform plating deposition. Refer to Figure 6 plating treatment again A cross-sectional view of the tank 400. The wafer holder fitting 450 is located above the processing kit 420. The processing kit 420 generally includes a basin 4 3 0, a customer body 4 7 2, an anode fitting 4 7 4 and a membrane 4 7 6. Preferably, the anode fitting 474 should be arranged below the container body 472 and attached to the lower part of the container body 472, and the filtration product 4 7 6 is arranged between the anode fitting * 7 4 and the crying body 472. . The container body 472 is preferably a cylindrical body, which contains electrical insulating materials, such as ceramics, plastic, plexiglass (propionic acid), vegetables, lexane, PVC, CPVC, and PVDF. . In addition, the container body 4 72 may be made of metal, for example, stainless steel, nickel, and titanium, and then coated with an insulating layer such as “Tef 丨”, pVDF, plastic, rubber, and others that are insoluble in the electrolyte and can be opposed (Ie, anode and cathode of electroplating system) Electrical insulation composite material. The preferred container body 472 is made with appropriate estimates and is matched with the plated surface of the wafer and the shape of the wafer processed by the system. It is generally round or long. Page 51 -^ (Please read the notes on the back before filling out this page) IX .--- h ----- line f- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 Α7 _ Β7 5. Description of the invention () Square . One of the preferred embodiments of the container body 472 includes a cylindrical ceramic hose having an inner diameter approximately equal to or slightly larger than the wafer diameter. The inventors have found that when the size of the container body is approximately equal to the surface of the wafer plating, it is not necessary to use the typical rotating action required by ordinary plating systems to achieve uniform plating results. The upper part of the container body 472 extends radially outward to form a circular dam 478. The dam 478 extends across the inner wall 446 of the electrolyte collector 440 to power the electrolyte into the electrolyte collector 440. The upper surface of the dam 478 preferably matches the lower surface of the cathode ring 466. Preferably, the upper surface of the dam 478 preferably includes an inner annular flat portion 480, a middle upper inclined portion 482, and an outer lower inclined portion 484. When the wafer is in the processing position, the plated surface of the wafer is above the cylindrical opening of the container body 472, and a channel for the electrolyte flow is formed between the lower surface of the cathode ring 466 and the upper surface of the dam 478. The lower surface of the cathode contact ring 466 is disposed above the middle inclined portion of the inner flat portion 480 and the dam 478. The outer lower inclined portion 4 8 4 is inclined downward to facilitate the flow of the electrolyte into the electrolyte collector 440. i Λ The lower portion of the container body 472 extends radially outward to form a lower ring-shaped flange 486 so as to fix the container body 472 to the tub 430. The outer periphery (ie, the circumference) of the torus 486 is smaller than the opening 444 and the inner circumference of the electrolyte collector 440 so that the processing kit 420 in the plating processing tank 400 can be moved and replaced. Preferably, a plurality of fixed bolts 488 are preferably arranged on the annular flange 486 and pass through the bolt holes in the trough 430 downward. A plurality of removable fastening nuts 490 fix the processing kit 420 on the tub 430. Sealing gasket 487 (for example: elastic sealing ring) from the container body 472 to the basin 430 from the bolt 488 to page 52 This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (please first Read the notes on the back and fill out this page) ---- II --- Order --------- * ^ &1; 513751 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The inside is radially arranged to prevent leakage of the treatment set 420. The nut / bolt set facilitates quick and easy removal and replacement of the processing set 420 components during maintenance. Preferably, the filter membrane 476 is attached to the container body 472 and can completely cover the opening below it, and the anode fitting 474 is disposed under the filter membrane 476. The interval 4 9 2 is arranged between the filter membrane 4 7 6 and the anode fitting 4 7 4. Preferably, the filter membrane 4 7 6, the space 4 92 2, and the anode fitting 4 7 4 are fastened to the lower surface of the container body 472 with removable fasteners such as screws and / or bolts. In addition, the filter membrane 4 7 6, the space 4 92 2, and the anode fitting 4 7 4 are fixed to the basin 430 in a removable manner. The filter membrane 476 should preferably include a ceramic diffuser to control the flow pattern of the electrolyte to the electroplated surface of the substrate. The anode fitting 474 preferably includes a consumable anode that can be used as a metal source for the electrolyte. In addition, the anode fitting 474 includes a non-consumable anode, and the metal to be plated is supplied from the electrolytic solution of the electrolytic solution replenishing system 220. As shown in FIG. 6, the anode fitting 474 is a self-contained micro-module, and the porous anode casing 494 is preferably made of the same metal (for example, copper) as the metal to be plated. In addition, the anode case 494 is made of a porous material, such as a ceramic party or a polymer film. A soluble metal 496, such as copper electrochemical deposition using high-purity copper, is disposed within the anode case 494. The soluble metal 496 preferably includes metal particles, metal wires, or perforated sheets. The porous anode case 494 can also be used as a filter membrane to isolate particles generated after the metal is dissolved in the anode case 494. Compared with non-consumable anodes, consumable (ie, dissolvable) anodes can provide an electrolyte that does not generate gas and minimize the need for periodic addition of metals to the electrolyte. The anode electrode contact 498 is passed through the anode casing 494 so as to be charged from the power source. Page 53 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------ -Install ---.---_-- order ---------- line win (please read the notes on the back before filling this page) 513751 A7 B7 V. Description of the invention (accessible to / ♦ Sex metal 496. Preferably, the anode electrode contact 498 is made of a conductive material that is insoluble in the electrolyte, such as titanium, platinum, and stainless steel coated with platinum. The anode private contact 4 9 8 extends through the trough. 4 3 0, and it is connected to the power supply. Fortunately, the anode anode contact 4 9 8 is a threaded part 4 9 7 with a fastening nut 499 to fix the anode electrical contact 498 to the basin 43. The sealing washer 495, for example, an elastomer washer, is arranged between the fastening nut 499 and the basin groove 430 to prevent the treatment of the set, which leaks out. The basin groove 430 generally includes a cylindrical portion 50. 2 and bottom portion 504. The upper annular flange 506 extends radially outward from the top of the cylindrical portion 502. The upper annular flange 506 includes several holes 508, the number of which is below the container body 472 Convex ring The number of bolts 488 on 486 matches. To fix the annular flange 506 above the basin 430 and the annular flange 486 below the container body 472, the bolt 488 is passed through the hole 508, and the fastening nut 490 is fastened on the bolt 488. Upper. The better (the periphery) of the upper annular flange 5 0 6 is approximately equal to the periphery (that is, the circumference) of the lower annular flange 4 8 6. When the Bayer set 420 is located on the main frame 214, the trough The lower surface of the annular flange 506 above 430 preferably falls on the bracket flange of the main frame 214. ^ The inner circumference of the cylindrical portion 502 can accommodate the anode fitting 474 and the filter membrane 4 7 6. The filter membrane 4 The outer periphery of 7 6 and the anode fitting 4 7 4 is preferably slightly smaller than the inner periphery of the cylindrical portion 502, so that a considerable part of the electrolyte flows through the anode fitting 4 7 4 and then through the filter membrane 4 7 6. Basin 4 3 0 Bottom part 5 〇4 electrolyte inlet 5 1 0 is the electrolyte supply line to the electrolyte replenishment system 2 2 0. Anode fitting 474 is arranged in the bowl 430 near the cylindrical part 5 〇2 of the central part of page 54, this paper size applies Chinese National Standard (CNS) A4. Specifications (210 X 297 g t) (Please read the back Please fill in this page again for the matters needing attention) Packing: -----'—— Order * --- I ----- line | Printed by the Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 --- ^ _ B7 V. Invention Explanation () It is preferable to form a channel for the electrolyte to flow between the anode fitting 474 and the electrolyte inlet 510 of the bottom portion 504. The electrolyte inlet 5 10 and the electrolyte supply line should preferably be connected using a releasable connector to facilitate the removal and replacement of the processing kit 420. When the treatment kit 420 is repaired, the electrolyte is discharged from the treatment kit 420, and the electrolyte flowing in the electrolyte supply line is stopped and discharged. The connector for the electrolyte supply line is released from the electrolyte inlet 5 10, and the power supply to the anode fitting 474 is stopped. Raising or rotating the head end fitting 4 1 0 provides the space needed to remove the processing kit 420. The processing set 420 in the main frame 2 14 is removed again, and a new or readjusted processing set is placed in the main frame 2 1 4. In addition, the basin 430 can be fixed on the supporting flange of the main frame 214, and the container body 472 and the anode and the filter membrane can be removed for maintenance. At this time, the nut for fixing the anode fitting 474 and the container body 472 to the tub 430 is removed to remove the anode fitting 474 and the container body 472. The new or readjusted anode fitting 474 and the container body 472 are placed in the main frame 214 and fixed to the basin 430. : FIG. 20 is a cross-sectional view of a first embodiment of a packaged anode. The permeable anode shell in the packaged anode 2000 can produce the anode plate 2004 when the metal is dissolved: "anode residue" or particulate filtering or blocking, as shown in Figure 20, the consumable anode plate 2004 is sealed on the hydrophilic anode. It contains copper flakes, and high-purity, oxygen-free copper is preferred. The consumable anode plate 2004 is fixed and supported by several electrical contacts or connecting wires 2006 passing through the bottom of the trough 430. Electrical contacts or wires 2006 pass through the anode encapsulation film 2002 and enter the bottom surface of the anode plate 2004. The electrolyte flows from the electrolyte inlet 5 1 〇 located at the bottom of the basin 43 0 through the anode and the basin. Page 55 This paper is in accordance with China National Standard (CNS) A4. Specifications (210 X 297 mm) (Please read first Note on the back, please fill in this page) Order -i! ----- line Φ. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 --------- B7 V. Description of the invention () Between the side walls of the tank Channel (indicated by arrow A). The electrolyte also enters and exits the channel between the anode sealing film and the anode plate in a penetrating manner and flows through the anode sealing film 20 02 (indicated by the arrow β). The anode encapsulation film 2000 preferably contains a hydrophilic porous film. For example, the modified polyethylene fluoride film has a porosity between about 60% and 80%. A better one is about 70%, and its porosity. Then it is between about 0.025 μm and about 1 μm, and more preferably between about 0.1 Mm and about 0.2 μm. An example of the hydrophilic porous membrane is a commercially available Durapore Hydrophilic Membrane (Millipore Coirpomion, Bedford, Massachusetts). When the electrolyte flows through the encapsulation membrane, the anode residue and particles generated by the dissolution of the anode are filtered or blocked by the encapsulation membrane. Therefore, the encapsulation film improves the purity of the electrolytic solution during the plating process, and the defects formed on the substrate due to anode residues and contaminant particles during the plating process are also greatly reduced. FIG. 21 is a cross-sectional view of a second embodiment of a packaged anode. Similar to the first embodiment of the packaged anode, the anode plate 2004 is fixed and supported on the electrical connection wire 2006. The top packaging film 2008 and the ginseng packaging film 2010 respectively disposed above and below the anode plate 2004 are attached to the membrane support ring 2012 around the anode plate 2004. The top and bottom encapsulation films 2008 and 2010 contain the encapsulation film material of the first embodiment of the encapsulation anode described above. Membrane support ring 2 0 1 2 contains Xiangdang hard materials (compared to the encapsulation film), such as plastic or other polymers. The bypass liquid inlet 2014 is used to transport the electrolyte through the bottom of the trough 430 and through the bottom packaging film 2010 to the channel between the packaging film and the anode plate. The bypass outlet 2 0 1 6 is connected to the membrane support ring 2 0 1 2 and extends through the trough 4 j 0 to help drain excess electrolyte with anode flooding or particulates out of the sealed anode into the wastewater drainage Tube (not shown). Page 56 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ---_---- ^ --tl ---- Line, · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7

513751 V. Description of the invention () Better, the bypass liquid inlet 2014 and the main electrolyte inlet 510 are respectively controlled by the flow control on the liquid line connected to the inlet 阙 2 〇 2 Q, 2022, and The liquid pressure of the bypass liquid inlet 2014 is preferably maintained at a pressure that is greater than the pressure of the main electrolyte inlet 510. The electrolyte flow from the main electrolyte inlet 5 10 in the tub 430 is indicated by arrow A, and the electrolyte flow in the sealed anode 2000 is indicated by arrow B. The electrolyte in part of the input package anode flows out of the package anode through the bypass outlet 2016. In a packaged anode, a dedicated parallel-type electrolyte supplier can continuously remove anode residues or particles generated by dissolution of the consumable anode from the anode, thereby improving the purity of the electrolyte during the plating process. Fig. 22 is a cross-sectional view of a third embodiment of a packaged anode. The third specific embodiment of the encapsulated anode 2000 includes an anode plate 2004 fixed and supported on a plurality of electrical connecting wires 2006, top and bottom envelope films 2 008, 2010 attached to a film support ring 2012, and a film support The bracket ring 2012 connects and extends through the bypass outlet 2016 of the basin 430. The third embodiment of the packaged anode is preferably composed of the above-mentioned first and second embodiments of the packaged anode. A specific embodiment according to the third bottom encapsulation film 2010 includes one or more openings 2024 substantially disposed above the main electrolyte inlet 51o. The opening 2024 is used to receive the electrolyte flow flowing from the main electrolyte inlet 5 10, and the size is approximately equal to the inner circumference of the main electrolyte inlet 5 10. The flow of the electrolyte from the main electrolyte inlet 5 10 is indicated by arrow a, and the flow of the electrolyte in the packed anode is indicated by arrow B. Part of the electrolytic solution input into the packaged anode flows out of the packaged anode through the bypass outlet 2016, removing anode residues or particles generated by dissolution of the consumable anode. Page 57 This paper size applies to China National Standard (CNS) A4 specifications (21G X 297 male f ----- 2 Please read the precautions on the back before filling this page) -Install l · --tx ---- ----- · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Figure 23 is a cross-sectional view of the fourth embodiment of the package anode The fourth specific embodiment of the encapsulated anode 2000 includes an anode plate 2002 fixed and supported on several electrical connection wires 2006, top and bottom envelope films 2008, 2010 attached to a membrane support ring 2012, and a through The tub 430 and the bottom encapsulation film 2 0 1 0 are used to transport the electrolyte to the bypass liquid inlet 2014 between the encapsulation film and the channel of the anode plate. This third encapsulation anode embodiment includes the first one described above. The material of the second embodiment of the packaged anode is better. The electrolyte flow through the bypass liquid inlet 20 1 4 and the main electrolyte inlet 5 1 0 are controlled by the control valves 2020 and 2022 respectively. The autonomous electrolyte inlet 51 〇Electrolyte flowing out is shown by arrow A The electrolyte flow through the encapsulated anode is indicated by arrow B. In this specific embodiment, when the electrolyte flows through the membrane, anode residues and particles generated by the anode plate dissolution are filtered by the envelope membrane and Figure 16 is a schematic diagram of the electrolyte replenishment system 22o. The electrolyte replenishment system 220 provides electrolyte to the plating treatment tank during the electroplating process. The electrolyte replenishment system 220 generally includes the main electrolyte bath 6〇2 , Metering micro-module, filter micro-module 605, chemical analyzer micro-module 6 丨 6, and electrolyte waste treatment system 622 connected to the chemical analysis micro-module 616 by an electrolyte wastewater drain pipe 620. One or more controllers control the main tank Electrolyte formation in 600 and operation of electrolyte replenishment system 220. Preferably, the controller 2 can operate independently but is integrated with the control system 222 of the plating system platform 200. The main electrolyte tank 602 serves as An electrolyte storage tank, and includes an electrolyte supply line 612, which is connected to each plating treatment tank through one or more liquid pumps 608 and valves 607. A heat exchanger 624 or a heater / cooler is Main tank 6 = The temperature of the electrolyte stored in main tank 602 is controlled by thermal connection. Heat exchanger page 58 ------------- jml pack ------- -Order -------- · Line · (Please read the precautions on the back before filling this page)

624 is connected to and controlled by the controller 610. The metering micro-module 603 is connected to the main tank 602 via a supply line, and includes a plurality of source tanks 606 or feed bottles, a plurality of valves 609, and a controller 611. The source tank 6 06 contains the chemicals needed to make up the electrolyte, and generally includes a source of deionized water and a copper sulfate (CuSCU) source tank to make up the electrolyte. Other source tanks 606 may contain sulfuric acid (HzSO4), hydrogen chloride (HC1), and various additives such as ethylene glycol. Each source slot should preferably be color-coded and fitted with a specific outlet connector to connect to the matching inlet connector of the metering micro-module. By color-coding the source slot and matching the source slot with a specific connector ', the human error in the replacement or replacement of the source slot can be greatly reduced. The deionized water source tank also provides the deionized water needed to clean the system during maintenance. The valve 609 and the related source tanks 606 are used to regulate the flow of chemicals to the main tank 602, and can be any kind of commercially available valves, such as butterfly cymbals, throttles and the like. The controller 611 can actuate the valve 609, which is preferably connected to the system control 222 so as to receive signals from it. The electrolyte filtration micro-piece 605 includes a plurality of filter membrane tanks 604. The electrolyte return line 6 1 4 is interposed between each treatment tank and one or more filter membrane tanks 604. The filter tank 604 can remove the unwanted electric liquid content before returning the electrolyte to the main tank 602 for reuse. The main tank 602 is also connected to the membrane tank 604 to promote recycling and filter the electrolyte in the main tank 602. After the electrolyte is recirculated from the main tank 602 to the filter membrane tank 604, the undesired electrolyte content can be continuously removed from the filter tank 604 to maintain a consistent purity. In addition, recycling the electrolyte in the main tank 602 to the membrane tank 605 can thoroughly mix the various chemicals in the electrolyte. Page 59 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please (Read the notes on the back before filling out this page)

• n LI — I I

Order ----- r ----- line J Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 Printed by the Consumer Affairs Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (The electrolyte supplement system 220 also includes chemical analysis The analyzer micro-module 616 is provided to provide on-line chemical analysis of the chemical composition in the electrolyte. The analyzer micro-module 616 is liquid-connected to the main tank 602 via the sample line 61 3 and is connected to the waste treatment system 622 via the outlet line 621 .Analyzer micro-module 6 丨 6 generally contains at least one analyzer and controller to operate the analyzer. The number of analyzers required for a particular processing tool depends on the composition of the electrolyte. For example, when the first analyzer When used to monitor the concentration of organic substances, the second analyzer is used for inorganic chemicals. In the specific embodiment of FIG. 6, the chemical analyzer micro-module 616 includes an automatic titration analyzer 615 and a current cycle canceller (cyclic voltametric stripper) (cvS) 617. Both types of analyzers can be purchased from various manufacturers. The more suitable automatic titration analyzer can be purchased from parker Systems' and the electric mud circulation eliminator (CyCHc v〇ltametric stripper) can be purchased from ECL. Automatic titration analyzer 6 1 5 measures the concentration of inorganic substances, such as copper chloride and acid. CVS 6 1 7 can measure the concentration of organic substances, such as ... Additives in the liquid and by-products produced during processing and returned from the processing tank to the main tank 602. Figure 16 Analyzer micro-components are for demonstration only. In another embodiment, each analyzer can be supplied independently The pipeline is connected to the main electrolyte tank and is controlled by a separate controller. Those skilled in the art will be able to apply it to other specific embodiments. 0 During operation, the electrolyte sample flows through the sampling tube 6 1 3 to the analyzer micro-assembly 6 1 6. Although samples can be taken regularly, it is better to maintain continuous electrolyte flow to the analyzer micro-module 6 1 6. Some samples are sent to the automatic titration analyzer 6 1 5 and some are sent to CVS 6 1 7 Perform appropriate analysis. Control page 60. This paper size applies Chinese National Standard (CNS) A4. Specification (210 X 297 mm) (Please read the precautions on the back before filling this page). Installation-> ----- Γ—Order · 513751 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of invention () The device 619 sends signals to operate the analyzers 615 and 617 to generate data. The information sent by the chemical analyzer 6 1 5 and 6 1 7 is passed to Control system 222. The control system 222 processes the information and sends signals (including chemical dose parameters set by the user) to the metering controller 6 11. The received information is sourced by operating one or more valves 609 On-line adjustment of the chemical replenishment rate to maintain the desired and better and fixed electrolyte chemical composition during the plating process. The waste electrolyte sent from the analyzer micro-assembly then flows to the waste treatment system 622 via the outlet line 621. Although the preferred embodiment uses on-line monitoring and adjustment of the electrolyte, various methods may be used in accordance with the present invention. For example, the metering micro-module 603 may be manually controlled by an operator based on the output value of the chemical analyzer micro-module 616. The system software is preferably connected automatically and adjusted by the operator (manually). In addition, although multiple controllers are shown in Figure 16, a single controller can be used to control various system components, such as the chemical analyzer micro-module 616, the metering micro-module 603, and the heat exchanger 624. Those skilled in the art can understand other long body embodiments. Knife analysis =. It is better to include & standard products and weight maps to help the controller to correct the offset standards and calibration charts caused by repeated use of the analyzer electrode or sensor due to corrosion. The analyzer is better for grouping. For example, the 'auto titration analyzer 615 includes standards and calibration charts for inorganic substances, while CVS617 includes standards and calibration charts for organic substances. For example, the table lists three standards for the analysis of copper and chloride content in the electrolyte. Table 1 ·· Standards for copper and gas content Page 61 Private paper ruler—Zhongguan Jiaxian B) Α4 specifications (fine χ tear male hairpin (please read the precautions on the back before filling this page)

Clothing -------- Order --------- Line I 513751 A7 B7 V. Description of the invention (chloride standard product 1 (low) standard product 2 (medium) standard product 3 (high) 40g / l 50g / l 60g / l 40pp] 70pp; 1 ΟΟρρι __I_ | The analyzer printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs uses a standard product to determine the analyzer's analysis of copper and chloride content due to repeated use. The error value or offset value caused by corrosion of the electrode or sensor of the analyzer. The linear internal difference between the known standard content and the analyzer measurement value is closed. The analyzer can be calibrated to accurately analyze the electrolyte sample. Substance. The measurement data of the electrolyte sample can be accurately measured after being calibrated with the offset value of the electrode or the sensor. After using the standard and the calibration chart, the present invention can provide accurate wiring, analyze the electrolyte online, and help The closed-loop analysis is performed by the analyzer in the system. The present invention can also extend the life of the electrode or sensor and reduce the number of times the system must be interrupted due to component replacement. The electrolyte replenishment system 220 also includes an electrolyte wastewater drain pipe 62 〇Connected to electrolyte waste Material treatment system 622 for the safe disposal of waste electrolyte, chemicals and other liquids used in electroplating systems. Preferably, the electric ore tank should include a pipeline directly connected to the electrolyte wastewater drain pipe 62 or the electrolyte waste treatment system. 622 so that the plating tank can be emptied and the electrolyte does not need to replenish the deep system 220 through the entire electric scale fluid. The electrolyte replenishment system 22 also preferably includes a drain connection to allow the excess electrolyte to be drained to the electrolyte. Wastewater drainage 62 0 ° Preferably, the electrolyte supplement system 22 ° also includes ^ 4 kinds of degassing micro = 63 to remove unwanted gas in the electrolyte. Generally, the degassing micro components include Degassing micro group Gong Gong Le Tong's liquids Page 62: The Zhang scale is applicable to the Zhongguanjia standard ((: ϋ_specification coffee χ 297 public love (please read the precautions on the back before filling this page)% 11111 513751

V. Description of the invention () The gas-eye separation membrane printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs in order to remove the released gas. The degassing micro-module 630 is preferably connected to the electrolyte supply line 612 adjacent to the processing tank 240. The degassing micro-module 630 is preferably as close as possible to the processing tank 24 so that most of the gas in the electrolyte replenishing system can be removed by the de-gassing micro-module before the electrolyte enters the processing tank. Preferably, each of the degassing grate type components 630 includes two processing tanks 240 at which two outlets can supply degassed electrolyte to each processing platform 2 1 8. In addition, the degassing micro module 63 0 is used in each processing tank. The degassing micro-assembly can be placed in many other different positions. For example, the degassing micro-assembly can be placed elsewhere in the electrolyte replenishment system, such as with the membrane or in a closed loop system with the main tank or with the processing tank. In other embodiments, the degassing micro-module is connected to the solution solution supply line 6 12 to provide a degassed electrolyte to the electrochemical deposition system processing tank 240. In addition, the degassing micro-components are connected separately or form a closed loop with the deionized water supply line and are specifically used to remove oxygen from the deionized water source. Because deionized water is used to rinse the treated substrate, it is better to remove the oxygen-free gas before the sound of SRD micro-components is delivered. This will make the electroplated copper less oxidized during the rinse process. . Degassing miniature components are well known in the art, and specific embodiments are quite common and can be used for various purposes. "A commercially available degassing micro-module can be purchased from Millipore Corporation (Bedford, Massachusetts). One of the specific examples of the de-gassing micro-module 630 is shown in Figure 26a, which includes a hydrophobic membrane 632 with a liquid on one side of the membrane 63 2 (ie Electrolyte) passage 634, and the vacuum system 63 6 is arranged on the other side of the membrane. The housing of the degassing micro-module 63 8 includes an inlet 640 and one or more outlets 642. When the electrolyte passes through the degassing micro, page 63 of this paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling out this page) γ Pack ---- I — i

--------- Line I Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () When the module is 63 o'clock, the gas and other solutions in the electrolyte can be separated through the hydrophobic membrane. The microbubbles in the liquid are removed by the vacuum system. In the specific embodiment of the other degassing micro-components 63 0 ′, as shown in FIG. 26b, the sentence Tingquan u K dagger hydrophobic membrane tube 632 丨 and the hydrophobic membrane tube 632, surrounding vacuum system 636. The electrolyte enters through the hydrophobic membrane hose. When the electrolyte passes through the liquid passage 634 in the hose, the hydrophobic membrane tube 632 'separates the gas in the electrolyte and other microbubbles in the electrolyte from the hose. The surrounding vacuum system 636 is removed. The present invention also provides its more sophisticated degassing micro-module design ', which includes an electrolyte elbow through the membrane and other degassing micro-modules with multiple cutout designs. Although not shown in Figure 16, the electrolyte replenishment system 220 may include many other components. For example, the electrolyte replenishment system 22 also preferably includes one or more additional tanks for storing chemicals required by the wafer cleaning system, such as an SRD platform. It is also possible to use double lines for the transport of hazardous substances to safely transport chemicals throughout the system. As required, the electrolyte replenishment system 220 also includes interfaces with other additional or external electrolyte treatment systems to provide additional electrolyte supplies to the plating system. i Figure 17 is a cross-sectional view of a rapid thermal annealing chamber according to the present invention. The rapid thermal annealing (RTA) chamber 211 is preferably connected to the loading station 210, and the substrate is transferred to the RTA chamber 211 by the automatic transfer caliber 228 of the loading station. The plating system, as shown in FIGS. 2 and 3, preferably includes two RTA chambers 2 11 ′ arranged opposite to the loading station 210, which are the same as the symmetrical design of the loading station 2 丨 0. Thermal annealing is well known in the art, and rapid thermal annealing chambers are often used in substrate processing systems to enhance the properties of deposits. The present invention attempts to use various thermal annealing chamber designs to promote the plating effect, including heating plate design and heating lamp design. Its page 64 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

513751 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (One of the thermal annealing chambers particularly suitable for the present invention is the WxZ chamber, which was purchased from Applied material, Inc. (Santa Clara, California). Although a rapid thermal annealing chamber using a heating plate is used in the present invention, other thermal annealing chambers can also be used in the present invention. The RTA chamber 211 generally includes a casing 902, a heating plate 904, a heater 907, and a plurality of substrate support bolts 906. The casing 902 includes a base 908, a side wall 910, and a top 9 1 2. Preferably, the cooling plate 9 1 3 is arranged below the top 9 9 of the housing. In addition, the cooling plate is integrated with the top 9 1 2 of the housing to become one of them. Preferably, the reflective insulating disc 9 1 4 is disposed within the housing 902 on the base 908. The reflective insulating disc 9 1 4 is generally made of a material that can withstand high temperatures (approximately higher than 5 0 C) and As a thermal insulator between the heater 9 0 7 and the housing 9 2 2, such as quartz, oxide, or other materials. The disc 9 14 can also be coated with a reflective material (eg gold) to conduct heat back Heater plate 906. The weight of the heating plate 904 is preferably larger than the substrate to be processed in the system, and its material is preferably not to react with any room temperature gas in the RTA chamber 2 1 1 or react with the substrate raw materials, such as silicon carbon Compound, quartz, or other materials. The heater 907 generally contains a heat-resistant element or a conductive / heat-generating heat source, and is arranged between the heating plate 906 and the reflective insulating disc 914. The heater 907 is connected to a power source 916 Provides the energy required to heat the heater 907. Preferably, the thermocouple 92 is arranged in the conduit 922, passes through the base 908 and the disc 914, and extends to the heating plate 904. The thermocouple 920 is connected with The controller (that is, the system controller described below) is connected and provides the temperature measurement result to the device. #According to the temperature measurement, the temperature increase or decrease of the annealing temperature is provided by the heater 907 to the controller The housing 902 preferably includes a cooling member 918 arranged outside the housing 9Q2 (please read the precautions on the back before filling this page) ▼ Installation -------- Order ------ Page 65 page

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 B7 V. Description of the invention (), which is connected to the side wall 9 10 by heat so as to cool the housing 9 2. In addition, there are one or more cooling channels (not shown) in the side wall 9 10 to control the temperature of the housing 90 2. A cooling plate 9 1 3 disposed on the inner surface of the top 9 1 2 can cool a substrate close to the position of the cooling plate 9 1 3. The RTA chamber 211 includes an opening valve 922 disposed on a side wall 9 10 of the housing 902, which can facilitate the substrate to enter and exit the RTA chamber. The opening valve 922 can selectively close the opening 9 2 4 on the side wall 9 1 0 of the housing communicating with the loading station 2 10. The loading station automatic changer 228 (see FIG. 2) can transport the substrate through the opening 924 into and out of the RTA chamber. The base support bolt 906 preferably includes a member having a tapered end, which is made of quartz, oxidized carbon, crushed carbon compounds, or other high temperature resistant materials. Each base support bolt 906 is disposed in a tubular duct 926 passing through the heating plate 904, and it is preferably made of a material that is resistant to heat and oxidation reactions. The substrate support bolt 906 is connected to the elevator plate 928 so that the substrate support bolt 906 can be stably transferred. The lift plate 928 is attached to a transmission device 930, such as a stepper motor, and the lift plate 928 is transferred through the lift handle 932 to place the substrate in various vertical positions in the RTA room. The lifter handle 932 passes through the base 908 of the housing 902 and is sealed by a sealing flange 934 disposed around the lifter handle. In order to feed the substrate into the RTA chamber 211, the opening valve 922 is opened first, and the automatic transfer machine 228 of the loading station inserts its robot blade (the substrate has been placed thereon) through the opening 924 into the RTA chamber. The engine blade of the load platform automatic changer 228 places the substrate above the RTA indoor heating plate 904, and the substrate support bolt 906 rises south to raise the substrate above the robot blade. The automaton leaves are then withdrawn from the RTA chamber, and the opening valve 922 closes the opening. Substrate support bolt 906 Page 66 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)--^----------- ^ ------- -(Please read the notes on the back before filling this page) 513751 A7 B7 V. Description of the invention () Then withdraw to the place where the heating plate 904 is located below the substrate. If necessary, the substrate and the support bolt 906 can be completely withdrawn and the substrate can be brought into direct contact with the heating plate. Preferably, the gas inlet 936 passes through the side wall 910 of the housing 902 to allow the selected gas stream to enter the RTA chamber 21 during the annealing process. The gas inlet 936 is connected to a gas source 938 via a valve 940 to control the flow of air into the RTA chamber 211. The gas outlet 942 is preferably arranged below the part 9 10 of the side wall of the housing 902 so as to discharge the gas in the RTA chamber, and more preferably, it is connected to the convex plate / check valve 944 to prevent atmospheric pressure from flowing back from outside. If desired, the gas outlet 942 can be connected to a vacuum pump (not shown) so that the RTA chamber can be evacuated to the desired degree of vacuum during the annealing process. According to the present invention, after the substrate is plated in a plating bath and cleaned in the SRD platform, the substrate is annealed in the RTA chamber 211. Preferably, the RTA chamber 211 is maintained at about one atmosphere, and the oxygen content in the RTA chamber 2 11 is controlled to be less than about 100 ppm during the annealing process. Preferably, the room temperature environment in the RTA chamber 2 11 contains nitrogen (N) or a combination of nitrogen (N) and less than about 41% hydrogen (H2), and the room temperature airflow entering the RT A chamber 211 is maintained at South at 20 liters / min in order to control the oxygen content below 100 ppm. For annealing of electroplated substrates, it is better to use a temperature between about 200 ° C and about 450 ° C, between about 30 seconds and 30 minutes, and more preferably between about 250 ° C and about 400 ° C In about 1 minute and 5 minutes. The temperature required for rapid thermal annealing is usually increased by at least 50 ° C per second. In order to achieve the required heating rate of the substrate during the annealing process, the heating plate should preferably be maintained at about 3 50 ° C and about 450 ° C, and the substrate should be placed away from the heating plate during the annealing process. It is preferably about 0 mm (that is, in contact with the heating plate) to about 20 mm. The operation of RTA room 2 11 should be better controlled by the control system 222, including maintenance. Page 67 Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling this page)

[Shang -------- Order --------- Line I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 B7 Printed by the Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The room temperature environment and the temperature of the heating plate desired in the RTA room. After Yuancheng's annealing process, the substrate support bolt 906 will raise the substrate to a position ready to be removed from the RTA chamber 2 11. The open valve 9 2 2 Open, the robot blade of the automatic transfer machine 228 of the loading station extends into the RTA chamber below the substrate. The substrate support bolt 906 is retracted and the substrate is lowered on the robot blade, and then the robot blade is withdrawn from the RTA. The loading station automatic transfer machine 228 then transfers the substrate to be processed to the cassette 232 for delivery from the plating processing system. (See Figures 2 and 3) 〇 Referring again to Figure 2, the plating system platform 200 includes a control system 222 to Controls the functions of each platform component. Preferably, the control system 222 is installed above the main frame 214 and contains a program-controlled microprocessor. The program-controlled microprocessor is usually a software design program designed to control all 200 components of the plating system platform The control system 222 also provides power to System components, and includes a control instrument panel 223 for the operator to monitor and operate the plating system platform 2000. The control instrument panel 223, as shown in Figure 2, is an independent micro-component connected to the control system 222 through a cable and can be easily In general, the control system 222 can coordinate the operation of the loading station 210, the RTA room 211, the SRD platform 212, the main frame 214, and the processing platform 218. In addition, the control system m can be charged with electrolytic hard i The controller of the system 220 coordinates and provides the electrolyte required for the plating process. The following is a description of a typical wafer plating process through the plating system platform 2000 of FIG. 2. The following processing procedures can be used for various other processing procedures or A combination of processing procedures that can be performed with an electrochemical deposition system according to the present invention. Load a wafer cassette containing several wafers into the plating system platform 2000. Page 68 — — — — — — — — — — — — — — — — — I— ^. I ------- (Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economy 513751 A7 _ ____ B7 V. Description of the invention () The wafer cassette receiving area 224 of the station 210. The loading station automatic changeover machine 228 removes the wafer from the wafer slot of the wafer cassette and places the wafer in the wafer positioning machine 230. The wafer positioning machine 2 3 0 determines the orientation of the wafer and positions it according to the needs of this system processing. The loading station automatic conversion machine 228 then removes the positioned wafer from the wafer positioning machine 23 0 and places the wafer on the srd platform 2 In the wafer slot of the wafer transfer cassette 238 of 1 2, the automatic transfer host 242 removes the wafer from the wafer transfer cassette 2 3 9 and fixes the wafer on the elevator robot terminal control device 2404. The automatic transfer host 242 transfers the wafer to the EDP tank 3010 and performs a seed layer repair process by a non-electrical deposition method. After the seed layer is repaired, the automatic transfer host transfers the wafer to the processing tank 240 for the plating process. The elevator automata terminal operating device 2404 is rotated and the wafer is placed face down in the wafer holder fitting 45o. The wafer is placed under the wafer holder 464 but above the cathode ring 466. The elevator automata terminal control device 2404 releases the wafer again and places the wafer in the cathode ring 466. The wafer holder 464 is moved toward the wafer and the vacuum chuck holds the wafer on the wafer holder 464. The bladder fitting 470 on the wafer holder fitting 450 applies pressure to the wafer surface to ensure good electrical contact between the wafer electron microscope surface and the cathode ring 阴极 M. The end fitting v 452 descends to the processing position above the processing set 420. The wafer at this position is below the plane above the dam 478 and touches the electrolyte in the processing kit 420. The start-up power supply begins to supply power (ie, voltage and current) to the cathode and anode for the plating process. During the electroplating process, the electrolyte is generally continuously fed into the processing kit. The power and electrolyte flow supplied to the cathode and anode are controlled by the control system 222 in order to achieve the desired plating results. Page 69 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) --I --1111 ---- I--I-^ · 11 ---- 11 W (Please read the notes on the back before filling out this page) 513751 A7 B7 V. Description of the invention (). Preferably, the head end fitting rotates when the head end fitting is lowered and during the plating process. After the electroplating process is completed, the head end fitting 410 raises the wafer holder fitting and removes the wafer from the electrolyte. Preferably, the head-end assembly continues to rotate for a period of time in order to remove the residual electrolyte from the wafer holder assembly. The vacuum chuck on the wafer holder and the pouch accessory release the wafer on the wafer holder, and the wafer holder is raised so that the elevator auto terminal control device 2404 can remove the wafer to be processed from the cathode adapter. The elevator automaton terminal manipulator 2 404 is moved to the upper side of the back of the wafer to be processed in the cathode adapter, and the wafer is removed using a vacuum suction clamp on the elevator automaton terminal manipulator. The main frame automatic changeover machine lifts and lowers the rudder automaton terminal manipulator and the wafer from the processing tank 240, and the lifting automaton final manipulator flips the wafer from the face down to the face up position. The chip is then transferred to the EBR / SRD micro-module 2200. The EBR / SRD wafer holder raises the wafer, and the automatic transfer host withdraws from the EBR / SRD micro-module 2200. The wafer is placed on the vacuum wafer holder of the EBR / SRD tank, and the above-mentioned bead removing process is performed to remove excess deposits on the edge portion of the wafer. The wafer is then used in the EBR / SRD micro-module according to the spin-rinsing-drying procedure, and the deionized water or a combination of deionized water and the above cleaning liquid is used for cleaning. After that, the tablets will be removed from the EBR / SRD micro-module. The loading station automatic transfer machine 228 removes the wafers from the EBR / SRD micro-module 236 and transfers the wafers to be processed to the RTA chamber 21 to perform an annealing process to enhance the properties of the deposit. The annealed wafer is removed from the RTA chamber 2 11 by the loading station robot 228 and returned to the wafer cassette for removal from the plating system. The above procedures can be performed substantially simultaneously in the electroplating system platform 200 of the present invention. Page 70 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back first_fill in this page ) 51 · tT ——------- M Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A7 B7 V. Description of the Invention Processing. Although the foregoing is about the preferred specific embodiments of the present invention, other and further specific embodiments of the present invention can also be designed without departing from the basic scope of the present invention. The scope of the present invention is defined by the following patent applications Please read the cautionary note on the page printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Employee Consumption Cooperatives, printed page 11 7 This paper size applies to China National Standard (CNS) Α4 specification (210 × 297 mm)

Claims (1)

513751 A8 B8 C8 D8 VI. Application for Patent Scope 1. An electrochemical deposition system, including: a) the main frame 'which has a main frame wafer automatic conversion machine' (please read the precautions on the back before filling this page) b) A loading station configured to be connected to the host; c) one or more processing tanks connected to the main frame; and d) electrolyte supply piping fluidly connected to one or more electric processing tanks. 2 · The system described in item 1 of the scope of patent application, which further comprises: e) a system controller for controlling the electrochemical deposition process ° 3. The system described in item 2 of the scope of patent application, further comprising: f) The bead removal / rotation-rinsing ... drying (EBR / SRD) platform is located in the main frame adjacent to the loading station. 4. The system according to item 3 of the scope of patent application, which further comprises: g) a rapid thermal annealing chamber connected to the loading station. i 5. The system described in item 1 of the scope of the patent application, wherein the loading station includes: i) one or more chip cartridge receiving areas, printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, ii) a &quot; A plurality of loading station wafer automatic transfer machines capable of transporting wafers in the loading station; and iii) a wafer positioning machine. 6. The system as described in item 1 of the scope of patent application, wherein the main frame wafer automatic conversion machine includes a plurality of automatic robot arms that can operate independently. Page 72 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ΐ · 3 / Μ Α8 B8 C8 D8 Patent application scope 7 Boom (please read the notes on the back before filling out this page) Includes the terminal manipulator with vacuum clamp automaton blade. 8 · If the scope of patent application is the first! The system according to the above item, wherein the processing tank comprises: a head-end fitting containing a cathode and a wafer holder disposed above the cathode; Η) a processing kit 'containing an electrolyte container' having a dam, an electrolytic wood liquid inlet and An anode disposed in the electrolyte container; an electrolyte overflow basin disposed below the left dam; and a power source connected to the cathode and the anode. 9. The system according to item 8 of the scope of patent application, wherein the head-end fitting is attached to the rotary arm for the head-end fitting to rotate around the processing kit. 10. The system of claim 9 wherein the head end fitting is attached to a cantilever beam extending from a rotary boom. U. The system described in item 8 of the scope of patent application, which can be removed. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Xin Group is configured on the mainframe. 12. The system as described in item i of the patent application scope, wherein the electrolytic solution supplier includes an electrolytic solution replenishing system connected to the host, including: ； an electrolytic solution supply tank; (ii) a chemical analyzer micro-component containing one or A variety of materials and electrolyte supply page 73 This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 513751 A8 B8 C8 D8 々, chemical analyzer connected to the scope of patent application; (iii) with electrolyte Chemical supply micro-modules connected to the supply tanks; and 4! (Please read the precautions on the back before filling out this page) (iv) — One or more controllers that operate the electrolyte replenishment platform. 1 3. The system described in item 12 of the scope of patent application, wherein the chemical supply micro-module contains one or more source slots, and the source slots contain color-coded micro-module slots each having a mating connector. 14. The system as described in item 12 of the scope of the patent application, wherein the electrolyte replenishment system further comprises: (v) a filtration micro-module comprising one or more filter membranes connected to the electrolyte supply tank. 1 5. The system as described in claim 12 of the scope of patent application, wherein one or more of the chemical analyzers includes an organic chemical analyzer and an inorganic chemical analyzer. Wu · j Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 6. The system described in item 15 of the scope of patent application, wherein the organic chemical analysis device includes a cyclic voltametric stripper. 1 7. The system according to item 15 of the patent application, wherein the inorganic chemical analyzer comprises an automatic titration analyzer. 1 8 · The system as described in item 12 of the scope of the patent application, wherein one or more chemical analyzers include one or more standards and one or more calibration charts Page 74 Thousands ί * 公 7 9 2 M3751 Α8 | Di Nai? Your patent case is amended by your year / y / month Readers ατ ';: .¾ Whether to change the original substance of the printing of clothing by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 9 · The system described in item 1 of the scope of patent application, which further includes: Various deaerators are placed between the electrolyte supply unit and the treatment tank. 20. The system according to item 1 of the scope of patent application, further comprising: g) a seed layer repair platform configured on the main frame. 2 1. The system as described in claim 20 of the patent application scope, wherein the seed layer platform includes a non-electrical deposition tank. 22. The system described in item 1 of the scope of patent application, wherein the main frame includes a base with a protective coating. 23 · The system as described in item 22 of the scope of patent application, wherein the coating contains ethylene-chloro-tri-fluoro-ethaylene (ECTFE) 02,-a kind of electrification A chemical deposition system includes: a) an electrolyte supply tank fluidly connected to one or more electrochemical treatment tanks; and b) a chemical analyzer micro-module including one or more chemical analyzers connected to an electrolyte supply tank , One or more of the chemical analyzer contains page 75 ------------ ir (Please read the precautions on the back before filling this page) Order --------------- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) 513751 A8 B8 C8 D8 VI. Patent application scope Chemical analyzer and inorganic chemical analyzer 25 · As described in item 24 of the scope of patent application The system further includes a controller connected to one or more chemical analyzers. 26. The system according to item 24 of the scope of patent application, further comprising a filter micro-module 'which contains one or more filter membranes connected to the electrolyte supply tank. 27. The system of claim 24, wherein the organic chemistry analyzer includes a current loop canceller. 2 8. The system according to item 24 of the patent application scope, wherein the inorganic chemical analyzer comprises an automatic titration analyzer. 2 9. The system according to item 24 of the scope of patent application, further comprising: c) a chemical supply micro-module in fluid communication with the electrolyte supply tank. 30. The system described in item 29 of the scope of patent application, further comprising: d) a control system to control the electrochemical deposition process connected to the chemical analyzer micro-module and the chemical supply micro-module. 3 1 · The system described in item 29 of the scope of patent application, further comprising a controller connected to the micro-components of the chemical supply. P.76 This paper size is in accordance with China National Standard (CNS) A4 (21 × 297 mm) (Please read the precautions on the back before filling this page) I I Order Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs M3751 A8 B8 C8 Scope of patent application 32. The system as described in item 29 of the scope of patent application, which further includes a controller connected to the micro-components of chemical supply and the micro-components of the chemical analyzer. (Please read the notes on the back before filling this page) 3 3. — A method for analyzing the electrolyte in the electrochemical deposition system. The electrochemical deposition system contains one or more treatments connected to the main electrolyte supply tank. The tank 'includes: a) the discharge of at least a portion of the electrolyte from the main electrolyte supply tank to one or more chemical analyzers; and b) the analysis of the electrolyte to determine the concentration of inorganic and organic substances, wherein the electrolysis is analyzed The fluid contains an automated titration analyzer and a cyclic voltametric stripper. 34. The method according to item 33 of the scope of patent application, further comprising: c) discharging one or more chemicals from one or more source tanks to the main electrolyte supply tank. 35. The method according to item 33 of the patent application scope, further comprising: c) discharging at least a part of the electrolyte to one or more treatment tanks. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs π 3 6. —A device carrying a signal. When the program contained in it is executed by a processor, it will cause one or more controllers to perform the following steps: The tank stream discharges at least a portion of the electrolyte to one or more chemical analyzers; and (b) generates data related to the composition of the electrolyte. Article 77 S This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 513751 Printed by Employee Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent application scope 3 7 The signal carrying device according to item 36, wherein step (b) includes controlling an automatic titration analyzer and a current loop canceller. 38. The signal-carrying device as described in item 36 of the scope of the patent application, wherein step (b) includes measuring the concentration of the inorganic substance and the organic substance. 39. The signal-carrying device described in item 36 of the scope of patent application, further comprising: (c) releasing one or more chemicals from one or more source tanks according to the data generated in step (b) to Main electrolyte supply tank. 40. —A device for electrochemically depositing metal on a substrate, including a) a head-end fitting, including a cathode, and ii) a wafer holder disposed above the cathode; b) a processing kit, It is arranged below the head end fittings, including: i) an electrolyte container with a dam and an electrolyte inlet; and ii) an anode disposed inside the electrolyte container; c) an electrolyte overflow basin disposed below the dam, where the electrolyte overflows The flow basin has an electrolyte outlet; and d) a power source connected to the cathode and anode. 41. The device as described in item 40 of the scope of the patent application, in which the cathode contains the cathode page 78 This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 public love) ---------- -* I .--- · --- tr ---------- (Please read the notes on the back before filling this page) A3 BB C8 DB 513751 VI.Applicable patent range ring 42. Set the bias as described in item 41 of the scope of patent application, in which the wafer holder surface of the cathode ring package ^ has several wafer contact pieces ° 43, such as item 41 of the patent application The device 'wherein the cathode ring has a hydrophilic surface. 44. The device according to item 40 of the scope of the patent application, wherein the processing kit further comprises a filter membrane disposed above the anode in the electrolytic solution container. 4 5. The device according to item 40 of the scope of the patent application, wherein it further includes: e) an electrolyte supply device including: 1) a main tank connected to an electrolyte inlet on the electrolyte container via a pump; ii ) One or more filter tanks connected to the main tank; and iii) one or more source tanks connected to the main tank. 46. The device according to item 40 of the scope of patent application, wherein the anode comprises: a) a consumable anode plate; and b) a permeable packaging member encapsulating the consumable anode plate. 47. The device as described in item 46 of the scope of patent application, wherein the anode further comprises: page 79 The paper size applies the Chinese National Standard (cns) A4 specification (210 X 297 mm) -------- tr ---------- Line Γ Qing Read the notes on the back before filling out this page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 513751 A8 B8 C8 C) Several electrical contact members extend through the encapsulation member and enter the anode plate, and each electrical contact member extends through and is fixed on the electrolyte container. 48. The device according to item 46 of the scope of the patent application, wherein the packaging member includes a hydrophilic film. 49. The device according to item 46 of the scope of patent application, wherein the packaging member comprises a top hydrophilic film and a bottom hydrophilic film, which are attached to a film support ring disposed therebetween. 50. The device as described in claim 49, wherein the bottom hydrophilic membrane includes openings that can be used to facilitate the flow of electrolyte into the channel between the encapsulation member and the anode plate. 5 1. The device according to item 50 of the scope of the patent application, wherein the anode further comprises: d) a bypass outlet connected to the membrane support ring and extending through the electrolyte container. 52. The device according to item 49 of the scope of the patent application, wherein the pole further comprises · d) a bypass electrolyte inlet through a hydrophilic membrane at the bottom. 5 3. The equipment described in item 52 of the scope of patent application, in which the anode further contains ... g 80 pages This paper size is applicable to China National Standard (CNS) A4 specifications (210 J (Please read the precautions on the back before filling (This page) ^ t --------------------- Printed by the Intellectual Property Bureau Employees Cooperative of the Ministry of Economics 297 mm) M3751 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 6. The scope of patent application tj χ2 &gt; 5 4 ^ ^ ^ &lt; Folded device ', where the bypass inlet includes 3 4. The dagger flow control valve as described in item 52 of the patent application scope. cc j, ^ ^ ^, %% of the equipment ‘where the electrolyte inlet sentence 5 5. As in Item 54 of the scope of the patent application, a includes a flow control valve. % · The device as described in item 40 of the scope of patent application, further comprising: e) a rotation transmission device connected to the head end fitting and rotating the head end fitting. 57. The device as described in claim 40, wherein the wafer holder includes a pouch accessory. 58. The device according to item 57 of the scope of patent application, wherein the bag accessory includes an inflatable bag attached to the back of the intermediary wafer support plate and a sealing ring arranged in an annular groove on the front surface of the intermediary wafer support plate. 5 9 · The device according to item 58 of the scope of the patent application, wherein the intermediary wafer support plate includes a plurality of iron holes or holes penetrating the plate and is in fluid connection with the vacuum nozzle. 60. The device as described in claim 58 in the scope of the patent application, wherein the surface of the wafer holder plate of the one or more sealing rings and the intermediary contains a hydrophilic surface. Page 81: This paper size applies to China National Standard (CNS) A4 (21〇X 297 public love) -------- ^ --------- (Please read the precautions on the back first (Fill in this page again)