TW519677B - Deposition uniformity control for electroplating apparatus, and associated method - Google Patents

Abstract

A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate in a processing position. The actuator is connected to the substrate holder and adjustably positions the substrate relative to the electrolyte cell. The method involves electro-chemically depositing a metal film on a substrate having a metal seed layer comprising disposing the substrate in an electrolyte cell that is configured to receive the substrate. The method comprises adjustably positioning the substrate relative to the electrolyte cell.

Description

519677 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () Application Information for Continuation: The priority claimed in this disclosure is the provisional US patent application, serial number 60 / 216,790, July 7, 2000 The name of this application is, VERTICAL ADJUSTMENT FOR ELECTROPLALATING APPARATUS AND ASSOCIATED METHOD "(herein referred to as a reference document). This case is a renewed application for a previously applied US patent case, and its application number is 09 / 289,074. It was applied on April 8, 1999, and its name is "ELECTRO-CHEMICAL DEPOSITION SYSTEM '" (here 歹 ij is the reference document). Field of the Invention = The present invention relates to the deposition of a metal thin film layer on a substrate, especially on a substrate The positioning method of the substrate carrier used when the metal thin film is deposited on the substrate. BACKGROUND OF THE INVENTION: The electroplating process previously limited to the manufacture of wires on integrated circuit boards is now used to deposit metal on the seed layer formed on the substrate. The composite layer deposited on the substrate during plating includes a diffusion barrier layer, a seed layer, and a metal layer film. The metal layer film is filled in Among the features formed by the seed layer on the board. One embodiment of the filling feature process including electroplating includes initially depositing a diffusion barrier layer on the surface of the substrate to be plated. The process method is physical vapor deposition (PVD) or Chemical vapor deposition (CVD). Next, a seed layer is deposited on the diffusion barrier layer by a process method such as PVD or CVD. Then a metal layer is deposited on the seed layer of the substrate by electroplating. Finally, the fourth deposited The paper size of this page applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) ......... "" ... 囔 ........., 玎 ....... .. (Please read the notes on the back before filling out this page) 519677 A7 B7 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (The metal layer is fully processed by another process such as chemical mechanical polishing (CMp) method Flattening defines a conductive interconnect structure. After plating, the contour of the deposited foot metal layer is a measure of the thickness of the foot layer on the substrate. The profile is taken from around the seed layer on the substrate The contour of the deposited metal layer thus provides a uniform deposition rate of the seed layer on which the metal layer is deposited on the substrate. For example, if a seed layer on the substrate undergoes a large amount of metal layer deposition, its contour thickness will be Experienced less than the seed layer on the substrate:!: The thickness of the metal layer is thicker. In the process after electroplating, such as Cmp, determining the contour of the metal layer becomes very important. This contour can be used to determine whether further Processes to compensate for varying plating thicknesses and / or unwanted cross-sectional shapes of metal layers deposited on seed layers. For example, if a substrate is found in the following process, the contour thickness of the metal layer deposited around the seed layer of the substrate is thicker than the thickness of the wheel friction deposited on the center of the substrate seed layer. During the CMP process, the degree of grinding and etching of the metal layer above the substrate will be greater than the degree of grinding and etching of the metal layer in the center of the substrate, so as to provide a flatter metal layer thickness after CMP. This selective grinding or etching is necessary to produce a uniform metal layer deposition thickness on the substrate. After the CMP process, a uniform metal layer deposition thickness will appear on the entire seed layer. Depositing metal layers on irregularly shaped objects is a challenging task. In some conventional electroplating systems, it is intended to control the contour appearance of the metal layer deposited on the substrate during the electroplating process. If the thickness of the metal layer deposited from the center of the substrate to the surrounding area becomes more uniform, the subsequent papermaking process (such as CMP) on page 5 applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ... .. 丨 · 1 ·: Re :: ..... Order ......... # (Please read the notes on the back before filling this page) 519677 A7

f Please read the precautions on the back before writing this page.) The less grinding or etching is performed on the substrate, in order to produce a uniform thickness of deposited metal layer film. Therefore, CMP equipment has less wear and tear, and less grinding means that CMP time is also reduced. The plating process can also be used in other fields than semiconductor processes, such as metal automobile bumpers. Generally, in the electroplating process, the distance between a specific clock target point on the seed layer and the anode through the plating solution will be inversely proportional to the electrical impedance of the electric slot target point through the plating solution. The current density applied from the anode to the plating target is a function of the distance between the anode and the plating target. The deposition rate at the plating target point is directly related to the current density applied to this particular plating target point. Therefore, the deposition rate at a specific plating target point will be inversely proportional to the distance of the closest anode point. When the distance between the different points on the plating target and the anode is different, it will be difficult to provide a required or consistent plating metal deposition rate to the plating target. For example, it is difficult to plate a large, curved metal target such as a car bumper, because the distance between the different points on the car bumper surface and the anode is also different. Assuming that the electric field between the anode and the target does not change during electroplating, the closer the anode's electroplating target point will have the highest deposition rate. Modeling equipment for the printing field of the consumer cooperative of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, such as switches and baffles, can be used to compensate for uneven deposition thickness caused by different plating target points and anodes with different distance . The field modeling device can change the shape of the electric field within the plating system, so the electric field will enhance the uniformity of the deposition rate on the irregularly shaped object. However, the use of such field-building equipment, such as switches or partitions, requires complexity, maintenance, and expense in combination with another complex mechanical device to be used in a plating system. Usually also requires a promotion page 6 This paper size applies to China National Standard (CNS) A4 size (210x297 mm)-Α7

] Different positions to adjust the plating target table 519677 V. Description of the invention () The actuator moves to the different deposition rates of the surface. In addition, this tincture 'M, r this field modeling equipment such as switches and partitions is usually not at the same center as the plating device, with a pole 4, .Y "in order to strengthen the electric field on the irregular object. This different center The media # 开 丨〗 m% soil preparation is prepared and can provide unexpected changes in the electric field in the plating solution. As a result, the deposition rate of the seed layer added to the substrate is uneven. Another field modeling method includes The substrate is plated in multiple plating chambers having different shapes or diameters. The different plating chambers each thus generate an electric field with a different shape. For example, if a substrate is processed in one of the key chambers, an undesired metal is buried in the seed Deposition on the layer, then other substrates of similar size and structure can be processed in another plating room with a different diameter or shape. Different plating rooms with different diameters or sizes can generate different electric fields. Change the key room to S for No. The electric field will require cost and time, both for the use of multiple plating chambers and for changing the plating chamber. Λ, and it is possible that no one plating chamber can provide Therefore, it is still necessary to provide a simple mechanism to control the current density of the seed layer on the substrate from the center to the surroundings when the metal layer is electrochemically deposited on the seed layer 2. The seed layer deposited on the substrate The contour of the metal layer is related to the current density of different seed layer positions on the substrate. Purpose and summary of the invention: The present invention provides a method for chemically depositing a metal layer on a substrate with a metal seed layer and an apparatus therefor. According to page 7, this paper size applies Chinese National Standard (CNS) A4 specification (210x297 mm) .................... Order ......... # (Please read the precautions on the back before filling this page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 B7 V. Description of the invention () The substrate carrier of the board. The electrolyte chamber receives this board at a process position. The device is connected to the substrate carrier and can adjust the relative position of the substrate and the electrolyte chamber. This method includes electrochemically depositing a metal layer on a substrate with a metal seed layer, and includes placing the substrate in the electrolyte chamber. The design of the electrolyte chamber is to receive the substrate. This method also includes adjusting the placement of the substrate relative to the electrolyte chamber so that the seed layer on the substrate can obtain the desired deposition uniformity. In one aspect, adjusting the placement The substrate also includes a vertical placement of the substrate in the electrolyte chamber. Brief description of the drawings: It is worth noting that these drawings are only exemplary embodiments of the present invention and do not constitute a limiting scope of the present invention. The present invention still has other Relative embodiment. Figure 1 is a simplified cross-sectional view of a typical electroplating chamber; Figure 2 is a perspective view of an embodiment of an electrochemical plating (ECP) system; Figure 3 is an ECP system shown in Figure 2 Top view; Figure 4 is a perspective view of one embodiment of the spin-wash-dry (s RD) module, and the inlet of the cleaning and dissolving liquid is combined; Figure 5 is the rotation-wash-dry of Figure 4 (S RD) A schematic side sectional view of the module, which shows that the substrate at the processing position is placed vertically between the fluid inlets; Figure 6 is a schematic sectional view of an embodiment of the plating process chamber; Figure 7 is electrical Contact element A partial cross-sectional perspective view of one embodiment; FIG. 8 is a cross-sectional perspective view of another contact pad embodiment of the electrical contact element. Page 8 This paper size is applicable to China National Standard (CNS) A4 (210 X 297). ) ------------ Install— (Please read the notes on the back before filling in this page) Order ---- 印 Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs 519677 A7 B7 V. Description of the invention () _, (Please read the precautions on the back before filling out this page) Figure 9 is a sectional perspective view of another embodiment of the contact pad and independent pad of the electrical contact element; Figure 10 is the electrical Sectional perspective view of the independent pad of the sexual contact element; Figure 11 is a simplified circuit diagram representing the ECP system to each contact plug; Figure 12 is a schematic sectional view of an embodiment of a substrate assembly; Figure 12A is Figure 12 is an enlarged cross-sectional view of a pouch area; Figure 13 is a partial cross-sectional view of an embodiment of a flat plate of a substrate carrier, and Figure 14 is a partial cross-sectional view of an embodiment of a manifold; Figure 15 is a capsule Partial cross-sectional view of one embodiment of the bag; FIG. 16 is A schematic view of an embodiment of an electrolytic solution system; FIG. 17 is a schematic cross-sectional view of an embodiment of a rapid thermal annealing reaction chamber; FIG. 18 is a perspective view of another embodiment of an electrical contact element; The figure is a partial cross-sectional schematic diagram of another embodiment of a substrate carrier combination, and FIG. 20 is a cross-sectional schematic diagram of one embodiment of a sealed anode. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 21 is a sealed anode. A schematic sectional view of another embodiment; FIG. 22 is a schematic sectional view of another embodiment of a sealed anode; FIG. 23 is a schematic sectional view of another embodiment of a sealed anode; and FIG. 24 is a transmission with a web-shaped robot arm Top view of one embodiment of the main structure of the robot arm; page 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 519677

V. Description of the Invention () Figure 25 is another embodiment of a process head combination with a rotatable head combination 2410; (Please read the precautions on the back before filling this page) Figures 2 6a and 2 6b are A schematic cross-sectional view of one embodiment of an outgassing module; FIG. 27 is an enlarged cross-sectional view of an embodiment of a substrate bearing seat of FIG. 25; and FIG. 28 is a horizontal coordinate starting from the edge of the substrate. Example of a graph of copper thickness (microns) at different heights above the anode; and Figure 29 is the implementation of the combination of the rotatable head shown in Figure 27 and Figure 7 to apply force to the substrate to make the substrate arcuate Case side view. The terms "above, below, bottom, up, down, higher, lower, and other relevant positions" used in the description are the embodiments shown in the description drawings, and may be due to the manufacturing process. The relative position of the device varies. At the same time, for the purpose of explanation, the same elements in the drawings will be marked with the same reference numerals as much as possible. Contrast description of printed numbers printed by employees ’cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: 10 Electroplating room 12 Electrolyte room 14 Substrate carrier 15 Plated surface 16 Anode 20 Contact ring 21 Top opening 22 Substrate 66 Pushing plate 67 Electrical contact element 159 Pump System 210 load station page 10 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 519677 Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economy 212 Spin-wash-dry (SRD) station 216 Main architecture Transfer station 2 2 0 Electrolyte solution replenishing system 224 Substrate clip receiving area 230 Substrate locator 2 3 6 SRD module 242 Main frame transfer robot 246 Mechanical blade 248 Web control unit 2 52 Web robot arm 260 Central processing unit (CPU) 264 Circuit section 330b Side wall 3 3 0 d Bowl-shaped space 334 Foot actuator 337 Clamp 339 Exit 342 Bracket section 344 Connecting section 347a Valve 348 First nozzle 350 Second fluid inlet 352 Second conduit 11th Page A7 B7 V. Description of the invention 2 0 0 Electrochemical plating (ECP) system 211 Thermal annealing reaction chamber 214 Main frame 218 Process station 222 Controller 228 Load station transfer robot 232 Substrate clamp 2 3 8 Clip 240 Process chamber 244, 2402 Robot arm 250 Main body 254 Vacuum gripper 262 Memory 3 3 0 a Bottom surface 330c Upper half cover 332 Foot support 3 3 6 Feet 338 Supporting base plate on the upper surface of the foot 340 First conduit inlet 343 Connecting element 346 First conduit 347 First fluid 349a Second valve 351 Second nozzle This paper size applies to Chinese National Standard (CNS) A4 specification (210 X 297 male t) ---------------------------- (Please read the precautions on the back before filling this page) 519677 A7 B7 5 Description of the invention () Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 353 Connecting elements 400, 420 Process room 410 Head assembly 430 Bowl 440 Electrolyte solution collector 443 Opening 446 Inner wall 447 Bottom 448 Outer wall 450 Combination bracket 454 Placement column 456 Cantilever beam 457 Cantilever beam actuator 458 Substrate combination actuator 460 Placement plate 462 Head combination shaft 464 Substrate carrier 466 Cathode contact ring 470 Capsule combination 472 Container body 474 Anode combination 476 Filter 478 Ring weir 480 Inner ring flat portion 482 Middle inclined portion 484 Outer inclined portion 486 Ring flange 487 Seal ring 488 Bolt 494 Anode pad 496 Dissolvable metal 497 Threaded portion 498 1% pole connection Point 499 Fixing nut 502 Cylindrical part 504 Bottom part 506 Ring flange 508 Hole 510 Electrolyte solution inlet 602 Electrolyte solution tank 603 Feeding module 605 Filter module 607 Valve 608 Fluid pump 610 Controller 612 Electrolyte solution supply line 613 Sampling Pipeline page 12 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) ........- M: ......... Order ... . «(Please read the precautions on the back before filling this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () 615 Automatic titration analyzer 616 Chemical analysis module 620 Waste electrolyte discharge 622 Electrolyte solution disposal system 624 Heat exchanger 630 Degassing module 632 Draining membrane 634 Channel 636 Vacuum system 638 Sealer 700 Resistor 7 02 Power supply 704 Sensor / alarm 754 Substrate plating surface 762 Flange 764 Shoulder portion 765 Conductive member 768 Substrate seating surface 770 Ring insulation body 772 Internal electrical contact pad 776 Conductive connection portion 7 80 External electrical contact Pad 782 Pad 802 Container body 832 Substrate carrier plate 836 Pouch 837 Seal 838 Fluid source 840 Circular groove 841 Vacuum port 842 Inlet 843 Channel 845 Pump 846 Manifold 847 Cross valve 848 Inner shoulder 849 Vacuum ejector 850 outer shoulder 851 hose 852 placement rail 853 pressure line 854 fluid outlet 855 vacuum line 856 annular lip seal 857 cover 859 vacuum / pressure pump system page 13 (please read the precautions on the back first) (Fill in this page) This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) 519677 A7 B7 V. Description of the invention () Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumption Cooperative 861 Closed valve 902 Paddock 904 Heater plate 906 Base plate support bolt 907 Heater 908 Base 910 Side wall 912 Top 913 Cooling plate 914 Reflector insulation plate 92 0 Thermocouple 926 Tubular tube 928 Rising plate 930 Actuator 932 Rising shaft 934 Sealing flange 944 Release / check valve 1800 Cathode contact ring 1810 Placement portion 1820 Substrate receiving portion 1822 Ring substrate seating surface 1824 Bump 1900 Substrate carrying Block combination 1910 Substrate carrier plate 1912 Back surface 1914 Front surface 1916 Elastic 0-ring 1918 Ring groove 1920 Hole 2000 Sealed anode 2002 Anode sealing film 2004 Anode plate 2006 Feed through 2008 Top sealing film 2010 Bottom sealing film 2012 Film support ring 2014 Fluid inlet 2016 Bypass outlet 2020, 2022 Fluid control valve 2410 Rotatable head assembly 2452 Head assembly bracket 2454 Placement column 2455 Column cover 2456 Cantilever 2457 Cantilever actuator 2458 Actuation on the head 2459 Pivot joint 2460 Place the slide rail ......... / ... 耋 ......... Order ......... 订 (Please read the precautions on the back first Refill this page} Page 14 This paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm) 519677 A7 B7 Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (2464) Rotary actuator 2466 Lifting rail 2468 Pulling heart * 2470 Shaft 2706 Head rotation motor 2720 Fluid shield 2728 Upper spring surface 2729 Spring folding box connector 2732 Spring combination 2760 Head rotation housing 2763 Shaft Shield 2765 Contact Housing 2767 Electrical Feed Through 2771 Electrical Conductor 2773 Pneumatic Feed Through 2775 Hollow Coil Part 2776 Magnetic Rotary Element 2777 Magnetic Part 2785 Bearing 2790 Vacuum Supply 2792 Sleeve Element 2794 Fluid Conduit 2795 Concave around Slot 2796 fluid hole 2798 fluid channel 2799 rotating base 2802 horizontal coordinate 2804 vertical coordinate 2806 Detailed description of the invention of the curve: In the following description, embodiments of a plurality of electrochemical plating (ECP) systems 200 will be described. The operation of the substrate carrier device will be described in terms of enhancing the deposition uniformity of the surface of the seed layer. The substrate is the main target for electrical stitching. The substrate referred to herein may be any related semiconductor wafer, substrate or its target. This substrate is generally cylindrical or square structure, and includes irregular structures such as notches or flat cut planes to assist the process. This substrate (substrate) also includes large light emitting diodes (LEDs). Page 15 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) ............ .......... Order ......... (Please read the precautions on the back before filling out this page) Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 ---- ----- R7___ V. Description of the invention () The panel is generally used as a display panel of a computer and a television. Generally, this disclosure relates to placing a substrate in a position containing an electrolytic solution (electrolysis 1 to control the electroplating process. In one embodiment, the vertical degree of the seed layer on the substrate can be adjusted to modify the seed layer. The structure and operation of multiple embodiments of the plating system will be interpolated, such as the plating chamber shown in Figure 1 and the plating system platform 200 in Figures 2 and 3. Multiple substrate seed layers are placed The embodiment will also be interpolated. Figure 1 shows an embodiment of a plating chamber 10 for electroplating. The plating chamber 10 includes an electrolyte chamber 12, a substrate carrier 14, an anode 16, and a contact ring 2 〇. The electrolyte chamber 12 contains an electrolytic solution, and this solution has a top opening 21 defined by a contact ring 20. The substrate carrier 14 is placed on the electrolyte chamber, and the substrate can be immersed in the private solution or Remove it. The substrate carrier can enter or remove the electrolytic solution through the top opening of the electrolyte chamber. This substrate carrier 4 can also fix the substrate in the required position in the electrolytic solution during the manufacturing process. The contact ring 20 contains a plurality of metal or metal alloy electrical contact points, which can be in electrical contact with the seed layer on the substrate. The controller 222 is individually and individually connected to the multiple contact points and the anode. When the seed layer is plated, this controller will provide current to the substrate. Therefore, the controller can determine the current / voltage from the anode to the seed layer on the substrate. During operation in the plating chamber 10, the substrate 22 is placed on the anode and from A current will be generated from the anode to the seed layer on the substrate. When the seed layer is immersed in the electrolytic solution, the seed layer is the deposited layer on the substrate when the metal layer is deposited. When sufficient negative voltage is passed from the substrate through the electrolysis, page 16 of this paper Standards are applicable to China National Standard (CNS) A4 specifications (210X 297 mm) -------------......... Order ... (Please (Please read the notes on the back before filling this page) _ 519677 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () When the solution is added to the anode, the seed layer will be filled with sufficient negative voltage relative to the anode And cause the metal layer to be deposited on the seed layer (plating). The direction voltage is the plating voltage. Adding the plating voltage to the electrolytic solution can destroy the copper sulfide ion bond between the positively charged copper ions and the negatively charged sulfur ions in the empty region of the electrolytic solution. The empty region is close to Seed layer on the substrate. A large amount of positively charged copper ions will be deposited on the seed layer with a negative voltage on the substrate. During the electroplating process, copper ions are deposited from the empty regions, resulting in a lack of copper ions in the empty regions. The voltage generated from the anode to the seed layer on the substrate in the electrolyte chamber causes a current to flow from the anode to the seed layer through the electrolytic solution. An atomic level of electron exchange will combine this current to drive the copper atoms in the anode from the anode into the electrolytic solution. This anode is generally a copper metal block. The regional voltage in the electrolytic solution near the seed layer on the substrate is quite small, about 1 volt. Therefore, the copper ions reaching the surface of the seed layer on the substrate are mainly due to the diffusion of copper ions in the electrolytic solution. The voltage level of the seed layer causes copper ions to be deposited on the seed layer to form a metal layer. The higher voltage between the anode and the seed layer on the substrate will cause more ions to enter the electrolytic solution, so metal ions with a higher deposition rate are deposited on the seed layer on the substrate. Electrostatic dust between the anode and the seed layer affects the deposition rate of the seed layer only under the diffusion limit that all diffusing ions are converted to copper ions. Above this diffusion limit, a further increase in voltage between the anode and the seed layer will destroy the water molecule bonds in the electrolytic solution. Increasing the voltage above the diffusion limit does not improve the rate of metal layers deposited on the seed layer. If the electrolyte chamber 212 is not recirculated or re-paged, the paper size of this paper applies the Chinese National Standard (CNS) A4 specification (21〇 297 public love) ... ...... Order ......... Miscellaneous (Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () Supplement 'As more copper ions are deposited on the seed layer from the electrolytic solution for a period of time, the size of the empty area will eventually expand. Maintaining a fresh electrolytic solution flowing through the seed layer renews the chemical composition in the electrolytic solution and reduces the size of the empty area. FIG. 2 is a perspective view of one embodiment of the plating system platform 200. FIG. 3 is a schematic diagram of the plating system platform 200 shown in FIG. 2. Figures 2 and 3 are best referenced together. The plating system platform 200 generally includes a load station 210 'thermal annealing reaction chamber 211, a spin-wash-dry (srd) station 212, a main frame 214, and an electrolyte solution replenishing system 220. The plating system platform 200 is preferably contained in a clean environment and utilizes, for example, PLEXIGLAS (this is Rohm and Haas Company 〇f West

Philadelphia, PA). The main frame 214 generally includes a main frame transfer station 216 and a plurality of process stations 218. Each process station 218 includes one or more process chambers 240. The electrolyte solution replenishing system 22 is located beside the plating system platform 200 and is separately connected to the process chamber 24 to recycle the electrolytic solution used for the plating process. The plating system platform 2000 also includes a controller 222, which typically has a programmable microprocessor. The controller 222 shown in FIG. 3 includes a central processing unit (CPU) 260, a circuit portion 264, an input / output (I / O) interface 264, and a bus (not shown). The controller 222 may be a general purpose computer, a microprocessor, a microcontroller, or other known suitable types of computers or controllers. The CPU 260 executes programs and arithmetic operations of the controller 222. The controller 222 controls the manufacturing process, the operation of the robot arm, the valve operation, the timing control, etc. in combination with the control of the electroplating system platform 200. The controller 222 controls the paper size added to page 18. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ------------- (Please read the precautions on the back before filling (This page) 519677 A7 B7 V. Description of the invention () The operation of the anode 16 voltage, the plated surface 15 of the substrate 22, and the substrate carrier combination 450 shown in FIG. (Please read the precautions on the back before filling and writing this page) Memory 262 includes random access memory (RaM) and read-only memory (ROM), which stores computer programs, computing domains, operators, and sizes Values, system operating temperature and structure, and other parameters that control plating operations. The bus provides digital information transfer between CPU260, circuit part 264, memory 262 and 1/0264. The bus also connects the I / O 264 to the part of the EC CP system 200 for receiving or transmitting digital messages by the controller 222. 1/02 64 provides an interface to control the transfer of digital messages between each element in the controller 222. I / 〇 2 64 also provides an interface between the elements of the controller 22 and the different parts of the ECP system 200. The circuit section 264 covers all other user interface devices such as displays and keyboards. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The load station 210 preferably includes one or more substrate clip receiving areas 224 ′ one or more load station transfer robots 228 and at least one substrate positioner 230. The substrate clip receiving area, the load station transfer robot 228, and the substrate positioner are all contained in the load station 210 and are configured according to the required capacity of the system. As shown in the embodiments in FIGS. 2 and 3, the load station 2 includes two substrate clip receiving areas 224, two load station transfer robot arms 228, and a substrate positioner 230. The plate clamp 232 containing the substrate 234 is loaded into the substrate clip receiving area 224 to introduce the substrate 234 into the plating system platform. The load station transfer robot 228 transfers the substrate 234 between the substrate clamp 232 and the substrate positioner 230. The load station transfer robot arm 228 contains a typical transfer robot arm traditionally used. Page 19 of this paper applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) '----- 519677 A7 B7 V. Description of the invention ((Please read the precautions on the back before filling this page) Board The positioner 230 places each substrate 234 in a desired orientation to ensure that the substrate can be properly processed. The load station transfer robot 228 can also transfer the substrate 234 between the load station 210 and the SRD station 212 and between the load station 210 and Thermal annealing reaction chamber 211. Figure 4 shows a perspective view of one embodiment of the spin-wash-dry module, combined with the cleaning and dissolving fluid inlets. Figure 5 shows the spin-wash in Figure 4 -Side cross-sectional view of the drying (SRD) module, and shows that a substrate is located in the process position and placed vertically between the fluid inlets. The SRD station 212 includes one or more SRD modules 236 and one or more substrates through the clip 23 8. The SRD station 212 preferably includes two SRD modules 236 corresponding to the number of load station transfer robotic arms 228, and the substrate through the clip 238 is located above each SRD module 236. The substrate through the clip 238 can help the substrate Transfer between load station 210 and main frame 214 The substrate provides access to both the load station transfer robot 228 and the robot arm located in the main frame transfer station 216 through the card 238. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, see Figures 4 and 5, This SRD module 238 includes a bottom surface 330a and a side wall 3 30b, and the upper half cover 330c collectively defines a bowl-shaped space 330d of the SRD module. The cover is attached to the side wall and can maintain the fluid in the SRD module. In addition, a removable top cover can also be used. The feet 336 are located in the SRD module and include the feet support 332 and the feet actuator 334. As shown in Figure 5, the feet 3 3 6 Support the substrate 33 on the upper surface of the foot during the manufacturing process. 8. The foot actuator 334 can rotate the foot to drive the rotation of the base and raise and lower the foot as described below. The base is fixed to the base with a plurality of clamps 337. On the foot. The clamp clamps the substrate due to the centrifugal force. Page 20 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, A7 B7. In a preferred embodiment, The substrate will only be engaged when the substrate is to be removed from the foot during the manufacturing process. The true 2-channel (not shown) can also be used in the same way as other fixtures. The foot has a plurality of foot arms 33 6a and 33 6b. The fluid sprayed by the second nozzle can be sprayed onto the lower surface of the substrate as much as possible. The outlet 339 allows the fluid to be removed from the srd module. The first conduit 346 through which the first flow 347 flows will be connected to the valve 3 4 7a. The conduit may be a hose, a delivery tube, or other conduit capable of conveying fluid. The valve 347a controls the flow of the first fluid 347 and can be selected from various valves including needle, ball, butterfly, or other valve types and includes a valve actuator such as a solenoid, and can be controlled by the controller 2 2 2 to control. The duct 346 is connected to the first duct inlet 34 and is located above the base plate. At the same time, the duct 346 includes a bracket portion 342 and the SRD module, and a connecting portion 344 and the duct 346 are connected. The first fluid inlet shown has a single first nozzle 348 to deliver the first fluid 347 under pressure to the upper surface of the substrate. However, multiple nozzles and multiple fluid inlets can also be used to place around the interior of the SRD module. The nozzle on the substrate is preferably placed outside the diameter of the substrate to reduce the risk of fluid from the nozzle dripping onto the substrate. The first fluid inlet can be placed in a number of locations, including via an upper cover located above the substrate. In addition, the nozzle can be connected to a plurality of positions using a connecting element 3 4 3, which can be, for example, a ball and a socket joint. Similar to the first conduit and related components mentioned above, a second conduit 3 5 2 is connected to the second valve 3 4 9 a and the second fluid inlet 3 50, and has a second nozzle 351. The second fluid inlet 35 shown is located on the substrate on page 21. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------ ^ --- ----- ^ --------- (Please read the notes on the back before filling this page) 519677 A7

Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The description of the invention () has an upward angle to guide the second fluid through the second nozzle 351 to the bottom of the substrate. Similar to the first fluid inlet, this second fluid inlet may also include a plurality of nozzles, a plurality of fluid inlets and placement positions, and a plurality of positions including orientations adjusted using the connecting element 3 5 3. Each fluid inlet can extend into the SRD module in multiple locations. For example, the angle of fluid ejection can be adjusted to the center of the substrate or the periphery of the substrate according to the required SRD process. The controller 222 can control the two fluids located in the SRD module, and their flow rate, pressure, and time, as well as the opening and closing periods of their valves. This controller can be placed in, for example, a remote control panel or control room and fluid control can be performed with remote actuators. Another embodiment is shown in dashed lines' and an auxiliary fluid inlet 346a is provided which is connected to the first conduit 3 4 6 by a conduit 346 b and has a control valve 3 4 6 c. In this embodiment, the cleaning solution can be flowed on the back surface of the substrate after the dissolving solution is used. The use of this cleaning solution does not require repositioning the substrate or converting the second fluid inlet into a cleaning solution. In one embodiment, the substrate is placed in the bowl-shaped space of the SRD module with the product surface facing upward. As will be explained below, in this configuration, the first fluid inlet typically flows through a cleaning solution, usually deionized water or alcohol. The result will be that the backside of the substrate is downward and the fluid flowing through the second fluid inlet is a soluble fluid, such as an acidic solution, including gasified hydrogen, sulfuric acid, scale acid, hydrofluoric acid, or other soluble liquids or fluids, as required. Dissolved material related. In addition, when the required process is cleaning the substrate, both the first fluid and the second fluid are cleaning liquids such as deionized water or alcohol. Page 22 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- ^ -------- ^ ------- -(Please read the precautions on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () During operation, the feet are raised as shown in Figure 4 Position, and the robot arm (not shown) places the substrate face up on the stand. The stand lowers the substrate to the process position and positions the substrate between the first and second fluid inlets. Generally speaking, the foot starter rotates the foot at a speed of about 5 to about 5000 rpm. A typical range for a 200ππη substrate is about 20 to about 2000 rpm. Due to the centrifugal force during rotation, the lower half 337a of the clamp is rotated outward according to the pivot 337b, and faces the side wall of the SRD module. The rotation force of the clamping surface causes the upper half 337c of the clamp to press the foot-holding base plate 338 on the foot 336 inward and downward, and preferably on the edge of the base plate. The clamp can be rotated to a position where it is not in contact with the substrate, and the substrate is fixed on the foot only when the substrate is obviously away from the foot during the manufacturing process. When the substrate rotates the substrate, a cleaning solution is delivered to the front surface of the substrate through the first fluid inlet 3 ". A second fluid such as an acidic solution is delivered to the back of the substrate through the second fluid inlet to remove unnecessary deposits. Soluble fluid It chemically reacts with the deposited substance, dissolves it, and then flushes the substance from the back of the substrate, and flushes the substance from the area where the sediment is not desired. In a preferred embodiment, the flow rate of the cleaning solution is greater than the dissolution. The flow of the fluid to protect the front of the substrate from the influence of the soluble fluid. The first and second mud inlets are, among other factors, the size of the substrate, the respective flow rate, the spray pattern, the number of deposits and Form, etc. to adjust to the position of the best performance. In some examples, after the dissolving fluid dissolves unwanted deposits to remove the back of the substrate, the cleaning solution can also be sprayed through the inlet of the first section. In some examples You can use an auxiliary fluid into :: Connect the cleaning solution to the back of the substrate to clean the residue of the dissolved solution on the back. Page 23 ----------- Load- ------- Order --------- (Please read the precautions on the back before filling out this page) Moderate paper size M Male 97 2 X 110 1 2 I M 5) Ν ( C quasi standard home country 519677 A7 B7 V. Description of the invention () After cleaning the front and / or back of the substrate, the inflow of fluid will stop and the feet will continue to rotate to rotate the substrate, so that the surface can be effectively dried. · The loading fluid is generally transmitted by spraying, and its shape is related to the change of the spraying pattern of the special nozzle required. It can include fan-shaped, spray-shaped, cone-shaped and other different shapes. When the first fluid is When the cleaning solution is used, the spray patterns of the first and second fluids through different fluid inlets are fan-shaped, with a pressure of about 10 to about 15 pounds (psi) per square inch and a flow rate of about 1 to 3 gallons per minute. (Gpm) (for 200 mm substrate). Order --------- Φ, SRD system can also be used to remove unnecessary deposits along the edge of the substrate, resulting in edge exclusion areas. By adjusting the nozzle Orientation and arrangement, fluid flow rate, substrate rotation speed, and chemical composition of the fluid Unwanted deposits can be removed from the edges and / or edge exclusion areas of the substrate. Therefore, actually avoiding the dissolution of deposited materials on the front side of the substrate does not necessarily include the edges or edge exclusion areas of the substrate. Also, avoid Dissolution of the deposited material on the front side may include at least avoiding this dissolution without damaging the front side with the deposited material. One method of printing out the margin exclusion zone by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is to complete the dissolution process at about 1,000 to The substrate is rotated at a speed of about 100 rpm, and the solution is distributed to the back of the substrate at this time. The centrifugal force moves the dissolved fluid to the edge of the substrate and forms a layer of fluid along the edge due to the surface tension of the fluid. Back to front overlap. The rotation speed of the substrate and the flow rate of the dissolving fluid can be used to determine the overlapping range of the front faces. For example, a decrease in the rotation rate or an increase in the flow rate results in fluids with different sides (for example, the front side). Page 24 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 519677 A7. Consumption 5. Invention description (less overlap. In addition, the flow rate and flow angle of the cleaning solution delivered to the front side can be adjusted to compensate for the dissolving fluid layer at the edge of the substrate and / or the front side. In some examples, this dissolution The use of the fluid may initially remove the edge and / or the edge exclusion zone without cleaning the liquid, and then follow the cleaning / dissolution procedure described above. The SRD module 238 is connected between the load station 210 and the main frame 214. Main The architecture 214 generally includes a main architecture transfer station 216 and a plurality of process stations 218. Referring to Figures 2 and 3, it is shown that the main architecture 214 includes two process stations 218, each of which has two process rooms 24. The main frame transfer station 216 includes a main frame transfer robot 242. The main frame transfer robot 242 preferably includes a plurality of separate robot arms 2 "to Provides independent access to the substrates in process station 218 and SRD station 212. As shown in Figure 3, the main frame transfer robot 242 contains two robot arms 244, which is equivalent to the processing room 24 of each process station 218. Number. Each robot arm 244 includes a mechanical blade 246 to carry the substrate during substrate transfer. Each robot arm 244 is preferably capable of operating independently to transfer substrates in the system. In addition, the robot arm 244 can also operate in a coordinated manner. When one robotic arm is extended, the other robotic arm is retracted. The king frame transfer station 216 includes a web-shaped control device 248. The web-shaped control device helps the main frame to transfer the substrate on the mechanical blade of the robotic arm 242 from the side to the side. Turn up into the process chamber 24. Face down to complete the substrate face down process. The web control device 248 includes a main body 250 to provide vertical and rotational displacement relative to the vertical axis of the main f 豊 250, 1 squat The robotic arm 252 provides a rotation position along the horizontal axis of the web-shaped robotic arm milk ----------- installation -------- order --------- ( (Please read the notes on the back before filling out this page) 5 pages of this paper & Applicable standard for reading the mounds (CNS) A4 χ 297 public meal _ 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Moved. One is located at the end of the squatting robotic arm 252 The vacuum claw 254 can be grasped when the substrate is turned over and the web-shaped control device 2 4 8 transmits its soil. Web-shaped control: Place the substrate 234 into the process chamber 24 " for the face-down process. Details will be discussed below. Figure 24 is a top view of the main frame transfer robot with a web control. The main frame transfer robot 242 shown in FIG. 24 provides the transfer of substrates between different stations of the main frame station, including the process station and the SRD station. The main structure transmission robot arm m includes two robot arms 24 ° 2 'as shown in the figure, and a web-shaped control device 2404 attached to the end of the robot arm 2402. The web-shaped control device is a conventionally known mechanical arm that can be attached to the end as a carrier substrate. For example, the RR701 model can be located in Milpitas, such as ...

Automation, Uc • Acquired. The main frame transfer robot t 242 with the end of the web-shaped control device can transfer the substrate between different stations attached to the main structure, and flip the substrate to transfer to the required surface direction, that is, base = process surface down for Electron microscope process. The main frame transfer robot arm is best to provide independent robot arm movement along the u-z axis with the robot arm 2402, and independent substrate turning with the web-shaped control device end 2404. After combining the web-shaped control device 2404 as the end of the main-frame transfer robot, the steps of transferring the substrate from the main-frame transfer robot to the web-shaped control device can be omitted, and the substrate transfer process can be simplified. FIG. 6 is a schematic cross-sectional view of the electroplating process chamber 400. The plating process chamber 400 in this figure operates similarly to the plating process chamber 240 shown in Figures 2 and 3. This process room 400 generally includes a head assembly 41〇, = page 26 This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 public meals ^ -------- ^ ---- ----- (Please read the precautions on the back before filling this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description () Process chamber 420 and electrolyte solution collector 44〇. Electrolyte solution The collector 44 is preferably fixed on the body 442 of the main frame 214 and is located above the opening 443 defining the configuration position of the process chamber 420. The electrolyte solution collector 440 includes an inner wall 446, an outer wall 448, and a bottom portion 447 connecting the wall surfaces. The electrolyte solution outlet 449 is located at the bottom 447 of the electrolyte solution collector 440, and is connected to the electrolyte solution replenishing system 2 2 0 through a pipe, a hose, a delivery pipe, or other fluid transfer pipeline, as shown in Fig. 2. Head The assembly 41 0 is placed on the head assembly bracket 4 5 2. The head assembly bracket 45 2 includes a placement column 454 and a cantilever beam 456. The placement column 454 is placed on the body 44 2 of the main frame 214, and the cantilever beam 456 by the upper half of the placement column 454 horizontal The placement column 454 can preferably be rotated and displaced along the placement column in the vertical axis direction, so that the head assembly 41 0 can also be rotated. The head assembly 41 0 is installed on the placement plate at the end of the cantilever beam 456 4 6 0. The other end of the cantilever beam 4 56 is connected to the cantilever actuator 457 on the placement column 4 5 4 such as a pneumatic cylinder. The cantilever actuator 457 causes the cantilever beam 456 to place the column The sacroiliac joint is pivoted between 454 and the cantilever beam 456. When the cantilever beam is actuated 4 5 7 to retract, the cantilever beam 4 5 6 moves the head assembly 41 0 away from the process chamber 420 to provide the electroplating chamber 400 to the center Remove and / or replace the space required by the process chamber 420. When the cantilever actuator 457 is extended, the cantilever beam 4 5 6 moves the head assembly 4 0 to the process chamber 4 2 0 to allow for the head in the process position The substrate is placed in the combination 41 0. The head combination 410 generally includes a substrate carrying combination 450 and a substrate combination actuator 458. The substrate combination actuator 458 is placed on the placement plate 460 and includes a head combination shaft 462 Extending down through the placement plate, page 27. This paper is sized for the Chinese National Standard (CNS) A4 (210 X 297 mm) ---------- • Installation -------- Order --------- Φ (Please read the precautions on the back before filling this page) 519677 A7 B7 V. Description of the invention (460. The head assembly is thin, and the lower end is connected to the substrate carrier assembly 450, and the carrier assembly 450 is placed at the process position and the substrate load position. The substrate carrier assembly 450 generally includes a substrate carrier 464 and Cathode contact = 66. FIG. 7 is a schematic cross-sectional view of one embodiment of a cathode contact ring. It is also said that the contact ring 466 includes a ring-shaped body having a plurality of conductive members placed therein. The ring body is made of insulating material so as to form electrical insulation with a plurality of conductive members therein. The ring-shaped body and the conductive member form the entire diameter of the inner substrate seating surface, which can support the substrate and provide current during the manufacturing process. Referring now to FIG. 7 in detail, the contact ring generally includes a plurality of conductive members 765, which are at least located in the ring insulating body. The illustrated insulating body 770 has a flange m and a shoulder portion m inclined downwardly connected to a substrate seating surface 768 located below the flange 762. The flange 762 and the substrate seating surface 76δ are located on a plane that is fixedly offset and parallel to each other. Therefore, it can be understood that the flange 762 defines a first plane, the base plate seating surface 768 defines a second plane parallel to the first plane, and the shoulder portion 764 connects the two planes. However, in the first? The design of the contact ring in the figure is just one example. In other embodiments, the shoulder portion has a steep angle, including a vertical angle perpendicular to the flange 762 and the substrate seating surface 768. Alternatively, the contact ring 466 may be a flat surface without the shoulder portion 764. However, for reasons described below, a preferred embodiment includes a shoulder-like portion as shown in Fig. 6 or a similar variation. The structure of the conductive member 765 consists of a plurality of external electrical contact pads placed in a ring on the flange 7 6 2 and a plurality of internal electrical contacts 塾 7 7 2 placed on page 28. This paper applies the Chinese National Standard (CNS) A4 Specifications (210 X 297 public love) -------- ^ --------- < Please read the precautions on the back before filling out this page) 519677 A7 B7 Employees ’Intellectual Property Bureau, Ministry of Economic Affairs Consumption Cooperative printed 5. Description of the invention (on part of the substrate seating surface 768, and a plurality of embedded conductive connection blades 776 are used to connect electrical contacts 772, 78. The conductive members 765 are each electrically insulated by the insulating body 770 The insulating body is made of rubber materials such as polyvinylidene difluoride (PVDF), perfluoroalkoxy compounds (PFA), TEFLON® (registered trademark of E.I. duPont de Nemoirs Company of Wilmington, DE ·), And TefzelTM, or other insulating materials such as aluminum oxide (Ai203) and its ceramics; materials, etc. During the manufacturing process, external contacts 蛰 7 8 〇 are connected to a power supply (not shown) to pass through the connection part 776 transmits current and voltage to the internal contact pad 772. Then the internal contact pad 77 2 Supply current and voltage to the substrate and maintain contact with the surrounding parts of the substrate. Therefore, the conductive member 7 6 5 is electrically connected to the substrate as a separate current path during operation. Low resistivity, or vice versa High conductivity is directly related to good plating. In order to ensure low resistivity, the conductive member 765 is preferably made of copper (Cu), platinum (Pt), hafnium (Ta), titanium (Ti), gold (Au), silver (Ag), stainless steel, or other conductive materials. Low resistivity and low contact resistance can also be achieved by plating the conductive member 765 with a layer of conductive material. Therefore, the conductive member 765 can be made of, for example, copper. The rate is about 2 × 10-8Ω.m, and a layer of platinum is plated, and the resistivity of platinum is about 10.6 × 10 · 8 Ω.m. It can also be used in conductive substrate materials such as stainless steel, 4 mesh (Mo), copper A layer of nitride (TaN), titanium nitride (TiN), rhodium (Rh), gold, copper, or silver is formed on the mirror of He Qin. Furthermore, since the contact pads 772 and 780 are connected to the conductive connection portion 776, respectively, contact 塾772,780 may be one material, such as copper, while conductive members 765 are another Materials such as stainless steel. Contact pads 772, 7 80 and conductive connections. Page 29 This paper is sized for China National Standard (CNS) A4 (210X 297 mm) ............... ....... 、 Can ......... (Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description () The portions 776 can be plated with a conductive material separately or simultaneously. In addition, since the repeatability of the plating may be adversely affected by oxidation (such as the same insulating material), the internal contact pad 772 preferably contains an oxidation-resistant material such as platinum, silver, or gold. In addition to the effect of the contact material, the overall impedance of each circuit is related to the geometry of the internal contact pads 772 and the force supplied by the contact ring 446. These factors define the compression resistance rcr generated by the interface between the internal contact pad 772 and the substrate seating surface 768 due to the roughness between the two surfaces. In general, the appearance area increases as the applied force increases. However, the apparent area will be inversely proportional to Rcr, so an increase in the apparent area results in a decrease in rcr. Therefore, it is best to maximize the force in order to reduce the overall impedance. The maximum force applied during operation will be limited by the undulating force of the substrate. This force may cause the substrate to be damaged by too much force and pressure. However, since pressure is related to both force and area, the maximum tolerable force is also related to the geometry of the internal contact 7 7 2. Therefore, although the contact 塾 772 shown in FIG. 7 is a horizontal upper surface, other advantageous shapes may be used. For example, two preferred shapes shown in Figs. 8 and 9 are shown. Figure 8 shows contact pads such as blade edges, and Figure 9 shows hemispherical contact pads. Those skilled in the art will readily know other advantageous shapes. A complete discussion of the relationship between contact geometry, force, and impedance can be obtained from the Ney Contact Manual, by Kenneth E. Pitney, The J.M. Ney Company, 1 973, and the entire document is incorporated herein by reference. The number of connecting parts 776 can be changed due to the special number of 塾 772 contacts. Page 30 This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) " '-------- Order (please Read the precautions on the back before filling in this page} 519677 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Changes, as shown in Figure 7. For 200mm substrates Say, it is better to have at least twenty-four connection parts? 76 is evenly distributed throughout 36. However, when the number of connection parts reaches a critical value, the compliance of the substrate to the contact ring 4 6 6 is adversely affected. Therefore, although more than twenty-four connection portions 776 can be used, the uniformity of the contact will eventually be reduced due to the external shape of the contact pad 772 and the rigidity of the substrate. Similarly, although less than twenty-four can be used The connection part 776, but the electricity will gradually be limited and regionalized, resulting in a poor plating effect. Because the size of the process chamber can be easily changed to suit special applications, such as a 300mm substrate, the best The number can be easily determined by varying the scale and the embodiment. As shown in FIG. 10, the substrate seating surface 768 includes an independent liner 7 8 2. This independent liner is placed on the insulating body 7 7 0 and Extend inwardly to the inner contact pad 7 7 2 to define the inner diameter of the contact ring 4 6 6. This independent pad 7 8 2 preferably extends slightly above the inner contact 塾 7 7 2, for example several mi 1, and preferably contains elastomers such as VITON® (registered trademark of EI duPont de Memoirs and Company of Wilmington, DE), TEFLON®, butadiene rubber, and similar materials. The insulating body 770 also includes a separate gasket 782 Elastomers of the same material. In a later embodiment, the individual lining 7 8 2 and the insulating body 7 7 0 are integrated, that is, composed of a single piece. However, the independent pad 7 8 2 is preferably Separate from the insulating body 7 7 0 for easier removal, replacement or cleaning. The figure 10 shows a preferred embodiment of the independent pad 7 8 2, page 31. This paper size applies Chinese national standards (CNS) A4 size (210 X 297 mm) ----- ------- • Equipment -------- Order --------- Φ (Please read the precautions on the back before filling out this page) 519677 Employees' Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed A7 B7 5. Description of the invention () The independent gasket is completely seated on the insulating body 770, and Figures 8 and 9 show different embodiments. In the following embodiments, the insulating body γ 7 〇 The upper part of the connecting part 7 7 6 is exposed by machining, and the independent pad 782 is placed therein. Thus, the independent pad 782 will contact the connecting portion 7 7 6 of the portion. This design allows less material to be used for the internal contact pads 7 7 2, which is quite significant for the internal contact pads 7 7 2 that contain gold and is therefore more advantageous. During the manufacturing process, the independent pad 782 is in continuous contact with the peripheral portion of the plated surface of the substrate 'and is compressed to provide a sealing effect between the remaining cathode contact ring 4 6 6 and the substrate. This sealing prevents the electrolyte solution from contacting the edges and back of the substrate. As noted above, in order to obtain high plating repeatability, it is necessary to maintain a clean contact surface. Previous contact ring designs did not provide consistent plating results due to changes in the shape of their contact surfaces over time. This contact ring will eliminate, or actually reduce, the deposits accumulated on the internal contact pad 7 7 2 and change its characteristics to produce a highly repeatable, uniform, and uniform plating result on the substrate plating surface. . Figure 11 shows a simplified diagram of the possible circuit structure of the contact ring 4 6 6. To provide a uniform current distribution between the conductive members 7 65, an external resistor 700 is connected in series with each conductive member 765. The resistance of the external resistor 70 0 (expressed as Rg; XT) is better than the resistance of other components in the circuit. As shown in Fig. 11, the circuit passing through each conductive member 765 is represented by the resistance value of each element connected in series to the power supply 702. RE stands for the resistance value of the electrolyte solution, its characteristics and anode and page 32 ----------- · equipment -------- order --------- (please first (Read the notes on the back and fill out this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ---------- 丨 丨 Installation -------- Order ----------- -(Please read the notes on the back before filling out this page) A7 —---- ^ _ 5Z _----- 5. Description of the invention () The distance between the cathode contact% and the chemical composition of the electrolyte solution are related . Therefore, RA represents the resistance value of the electrolyte solution adjacent to the plated surface 754 of the substrate. RS represents the resistance value of the plating surface 754 of the substrate, and Rc represents the resistance value of the cathode conductive member 765 plus the compressive resistance value generated at the interface between the internal contact 塾 772 and the substrate electrode layer 754. Generally speaking, the resistance value of the external resistor REXT should be at least as large as ΣΙ ?, and ΣΙ? Is equal to the sum of Re, Ra, Rs, and Rc 4. It is better that the resistance value of this external resistor Rext is much larger than that, so Σβ can be ignored and the resistance value of each application circuit is about bn. Typically, the power amplifier is connected to all external contacts 780 of the cathode contact ring 466, creating a parallel circuit via internal contact pads 772. However, because the internal contact pad-to-substrate interface resistance value changes for each internal contact pad 72, more current will flow through the portion of the lowest resistance value, resulting in a more effective plating effect. However, if an external resistor is connected in series to each conductive member 7 65, the amount or value of the current passing through each conductive member 765 becomes controlled mainly by the resistance value of the external resistor. As a result, the change in electrical characteristics between each of the internal contact pads 772 does not affect the current distribution on the substrate. The average hook current density added to the plating surface enables the deposition of a sufficient metal layer on the substrate seed layer to produce a uniform plating thickness. External resistors also provide uniform current distribution between different substrates in the process sequence. Although the contact ring 466 is designed to resist the accumulation of deposits on the internal contact pads 772, the substrate-pad interface resistance may increase after multiple substrate plating cycles, eventually reaching unacceptable values. An electronic sensor / alarm 704 can overcome this problem by crossing the external resistor 700 and its connection to monitor the voltage / current through the external resistor. If the external paper on page 33 applies the Chinese National Standard (CNS) A4 specification (210 X 297 public meals y ----- 519677 printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A? ______B7_ V. Description of the invention () The voltage / current of the resistor 70 0 falls outside the preset operating range, which represents a very high substrate-pad impedance value. The sensor / alarm 7 0 4 will trigger corrective measures such as shutting down the plating process until the problem is detected by the operator. Until the solution. In addition, a separate power supply can be connected to each conductive member 7 65 and separately controlled and monitored to provide a uniform current distribution on the substrate. A highly automated system (VSS) can also be used to regulate the current. VSS -Generally includes a processing unit and combines components commonly used in the industry such as variable resistors, separate power supplies, etc. to supply and / or control current. When the physical and chemical characteristics of the internal contact pad 772, that is, the current, passes through When it changes over time, vss will process and analyze the feedback data. This data will be compared with the preset point. Then the vss will change the current and voltage to appropriate Value to ensure uniform deposition characteristics. Figure 18 is a perspective view of another embodiment of a cathode contact ring. The cathode contact ring shown in Figure 18 includes a conductive metal or metal alloy such as stainless steel, Copper, silver, gold, platinum, titanium, lithium, and other conductive materials, or a combination of conductive materials, for example, a layer of platinum metal on a stainless steel key. This cathode contact ring 1 800 includes the above placement portion 81 〇The cathode contact ring is mounted on and under the substrate receiving base assembly 1 820 to receive the substrate therein. This substrate receiving part 1820 includes a ring-shaped substrate seating surface 1 822 having a plurality of The contact pads or bumps 1 824 are uniformly spaced. When the substrate is placed on the substrate seating surface 1 822, the contact pads 1 824 actually contact the surrounding area of the substrate to provide electricity to the seed layer to be plated on the substrate deposition surface. Sexual contact. The contact soil 1 8 2 4 can be plated with a precious metal such as platinum or gold to resist oxidation. Ear No. 34 --------------- Installation -------- Order-- ------- (Please read the notes on the back first (Fill in this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Except for the contact pad surface that contacts the substrate, the exposed surface of the cathode contact ring is best treated to provide a hydrophilic surface, or plated The upper layer of material becomes hydrophilic. Hydrophilic materials and hydrophilic surface treatments are conventional techniques. One of the companies that can provide hydrophilic surface treatments is M i 1 1 ip〇re

Corporation, located in Bedford, Massachusetts. The hydrophilic surface can effectively reduce the formation of beads on the surface of the cathode contact ring by the electrolyte solution, and when the cathode contact ring is removed from the electroplating tank or the electrolyte solution, the electrolyte dripping liquid flows smoothly from the cathode contact ring. Since a hydrophilic surface is provided on the cathode contact ring to make it easier to remove the electrolyte solution, plating defects caused by the residual electrolyte solution on the cathode contact% can be effectively reduced. The inventors can also think about the application of this hydrophilic surface treatment or coating and use it in other embodiments of the cathode contact ring to reduce the bead phenomenon of the residual electrolyte solution on the cathode contact ring and the subsequent substrate production process. Defects in plating. Referring to Figures 12 and 12A, the substrate carrier 464 is preferably placed on the cathode contact ring 466 and includes a capsule-like assembly 470 to supply pressure to the back of the substrate and ensure electrical contact between the substrate plating surface and the cathode contact ring 466 . The expandable sac-like assembly 470 is arranged on the base plate 832 of the substrate. The pouch 836 is disposed on the lower surface of the substrate-bearing plate 832 ', and is therefore in a direction opposite to the contact point on the cathode contact ring 4 66, with the substrate 821 therebetween. The fluid source 838 supplies a fluid (such as a gas or a liquid) to the bladder 8 3 6 to expand the bladder 8 3 6 to change the angle. Referring now to Figures 12, 12A, and 13, the details of the capsular combination 470 are discussed herein. The base plate 832 shows that it is actually on page 35. The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 1— nna— n (nna · — · ϋ nn · 11 n I— n · 1 n /) 0- · n · 1_1 nf n I— nn I (Please read the notes on the back before filling this page) 519677 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economy It has a sheet shape and has an annular groove 840 formed on the lower surface and a vacuum port 841 placed in the center. One or more inlets 842 are formed in the substrate support plate 832 and lead into the enlarged annular placement passage 843 and the annular recess 840. The quick release tube 844 couples a fluid source 838 to the inlet 842 to supply fluid. The vacuum pump 841 is preferably connected to a vacuum / pressure pumping system 859 to selectively apply pressure or generate a vacuum on the back surface of the substrate 821. The pump system 8 5 9 shown in Fig. 12 includes a pump 8 45, a cross valve 847, and a true mouth shooter 849, commonly referred to as venturi. An advantageous vacuum ejector is available from SMCPneumatics, Inc_, Qf

Indianapolis, Indiana. Pump 845 may be a commercially available source of compressed gas and is coupled to one end of hose 851, and the other end of hose 851 is closed to vacuum port 841. The hose 851 is divided into a pressure line 853 and a vacuum line 855 having a vacuum ejector 849. The fluid is controlled by a cross valve 847 'which can selectively replace the communication between the pump 845 and the pressure line 853 and the vacuum line 855. The cross valve 847 preferably has a stop (0FF) setting so that the fluid is restricted in one direction of the hose 851. A shut-off valve 8 61 in the hose 8 5 1 prevents the fluid from flowing back through the pressure line 8 5 5 through the true 2 injector 8 4 9. The arrows indicate the direction of fluid flow. When the fluid source 8 3 8 supplies gas, it can be coupled to the hose 8 51 to eliminate the need for different compressed gas supplies, which is Fanpu 845. Furthermore, different gas supplies and vacuum pumps can provide pressure and vacuum conditions on the back of the substrate. Although it is desirable to allow both back pressure and back vacuum, a simplified embodiment includes a pump that provides only back vacuum. However, it will be explained below that if the back pressure is provided during the manufacturing process, the uniformity of the deposition will be improved. Page 36 This paper size applies the Chinese National Standard (CNS) A4 specification (210x 297 mm) --- ------ ----- ^ -------- ^ --------- (Please read the notes on the back before filling out this page) 519677 A7 B7 Property 5. Description of the invention (So, as above The arrangement including the vacuum ejector and the cross valve is preferred. Referring now to Figures 12A and 14, a substantially circular annular manifold 846 is placed in the annular groove 840. This manifold 846 A placement track 852 is included between the inner shoulder 848 and the outer shoulder "ο. The placement track 852 can be inserted at least partially into the annular placement channel 843. A plurality of fluid outlets 854 formed in the manifold 846 provide The communication channel between the inlet 842 and the pouch 836. A gasket 837 (such as an O-ring) is positioned in the annular placement channel 843 and aligned with the inlet 842 and the outlet 854, and is fixed by the substrate bearing plate 832 to ensure tightness. Traditional fasteners such as bolts (not shown) can be used to pass the manifold 846 through mating threaded holes (not shown, formed in Tube 846 and the substrate carrier plate 832) are fixed to the substrate carrier plate 832. Referring now to Figure 15, the pouch 836 is shown in section like an extended semi-tubular material and has a ring-shaped lip seal on each edge Pad 856, or tumor-like. In Figure 12A, the lip seal 856 is shown above the inner shoulder 848 and the outer shoulder 85. Part of the pouch 836 rests on the annular groove by the manifold 846 The wall of 840 is compressed. The width of this manifold is slightly smaller than the annular groove 8 4 0 by several meters. Therefore, the manifold 8 4 6, the bladder 836 and the annular groove 84 0 cooperate to form a fluid seal. To avoid > reduction of tile body, the bladder 836 preferably contains certain fluid impermeable materials such as silicone or any equivalent elastomer, which does not chemically react with the electrolyte solution and maintain reliable elasticity. Among them is shown in Figure 15 As shown, a compliant cover 857 may be placed over the pouch 836 and secured by adhesive or thermal bonding. The cover 857 preferably contains, for example, VITON®, buna ---------- -Install -------- Order --------- ^ 9. (Please read the note on the back first Items and then Complete this page) Ministry of Economy wisdom property office employees consumer cooperatives PRINTED

519677 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Rubber or similar elastomers and reinforced by, for example, KEVLAR® (this is a registered trademark of EI duPont de Nemoirs and Company of Wilmington, DE) . In one embodiment, the cover 8 5 7 and the pouch 8 3 6 contain the same material. The cover 857 has a special application in which the pouch 836 is prone to rupture. In addition, the thickness of the pouch 836 can be increased during manufacture to reduce the possibility of perforation. If the exposed surface of the pouch 8 3 6 is uncovered, it is best to add plating or treatment to the exposed surface of the cover 8 5 7 to provide a hydrophilic surface, such as the surface of the cathode contact ring discussed above. This coating facilitates the removal of the residual electrolyte solution and removal of the head assembly when the process chamber is removed. The number of specific inlets 8 4 2 and outlets 8 5 4 can be changed depending on the particular application. For example, although Figure 12 shows that two inlets correspond to the same outlet, another embodiment uses only a single fluid inlet to supply fluid to the bladder 836. In operation, the substrate 821 is introduced into the container body 802 and fixed to the lower half of the substrate-bearing plate 8 32. This system is fixed by pumping the air between the base plate 821 and the base plate 832 of the base plate 821 through the interface 8 41 by the pump system 1 9. The bladder 836 is then inflated by a fluid source 838 supplied with a fluid such as gas or water to the inlet 842. This fluid is transferred into the bladder 836 via the manifold outlet 854, thereby uniformly pressing the substrate 821 to the contact point of the cathode contact ring 4 6 6. The plating process then begins. The electrolytic solution is then poured into the process chamber 420 and faces the substrate 821, thereby contacting the exposed substrate plating surface 820. The power supply provides negative bias to the substrate plating surface 820 via the cathode contact ring 466. When the electrolyte solution flows to the substrate, page 38, this paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ----------- installation -------- order- -------- (Please read the precautions on the back before filling out this page) 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs V. Description of the invention () When plating surface 820, electrolyte solution ^ _ from The ions of T will be attracted by the surface 820 and deposited on the surface 820 to form a desired thin film coating. Due to the changing elasticity of the pouch 836, its roughness, that is, the roughness of the back surface of the substrate and the contact points of the cathode contact ring 46 6 are known to reduce the misalignment with the conductive cathode contact ring 466. This elastic watch: 8db of clothing can establish a fluid seal around the back of the substrate 821. Order clothes to prevent the electrolyte solution from contaminating the back of the substrate 821. ----- He swells with a uniform pressure Will go down

It is transmitted to the cathode contact ring 466 so as to buckle δ91 i 1 L to obtain substantially the same force from all contact points at the interface between the storm plate 821 and the cathode contact ring 466. This force may vary due to the pressure supplied by the fluid source 838. Furthermore, the effectiveness of the pouch assembly 47 is not related to the structure of the cathode contact ring 466. For example, although Fig. 12 shows a pin-like structure and a plurality of discontinuous contact points, the cathode contact ring 466 may also be a continuous contact surface. Since the force transmitted from the pouch 836 to the substrate 821 is variable, the current supplied by the contact% 466 can also be adjusted. As described above, an 'oxidation layer may be formed on the cathode contact ring 4 6 6 to limit the current. However, 'increasing the pressure of the pouch 8 3 6 can offset the current limitation due to oxidation. When the pressure is increased, the ductile oxide layer is more compromised and the contact between the cathode contact ring 4 6 6 and the substrate 8 2 1 becomes better. The effectiveness of this capacity pouch 836 can be further improved by changing the geometry of the cathode contact ring 466. For example, the shape of the blade edge penetrates the oxide layer more easily than a rounded or flat edge. In addition, the fluid sealing ring provided by the expanded bag 836 allows the pump 8 4 5 to maintain the true or selective state before, during, or after the process. Page 39 This paper applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) ----------- • Installation -------- Order --------- Refer to (Please read the precautions on the back before filling (This page) 519677 A7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ---------B7___ _ 5. Description of the invention () 2 or pressure. However, in general, because the pouch 836 can maintain the vacuum condition on the back without continuous operation during the process, the back of Puzhou only needs to function when the substrate is transferred to (or transferred out of) the plating process chamber 400. Maintain vacuum. Therefore, when the bladder 836 is inflated as described above, the back empty condition will be released at the same time when the pump system is removed, for example, at the selected position of the 847 closed (0FF). Removal of the fpu system 859 may be abrupt or involve a process of gradually lowering vacuum conditions. Sliding can provide a control exchange between the inflated bladder 836 and the simultaneous reduction of backside vacuum conditions. This exchange can be controlled manually or by a computer. As described above, when the pouch δ36 is inflated, there is no need to continuously apply a vacuum on the back side, because it may actually cause the substrate to deform or deform and cause poor deposition results. A back surface pressure can be provided on the back surface of the substrate 82 to make the substrate produce a "bowing" effect to perform the process. When the substrate is bowed or curved, the entire substrate may form the desired deposition appearance. Therefore, the tpu system 859 can selectively provide vacuum or pressure conditions on the back of the substrate. For a 200 mm substrate, it is best to provide a back pressure of 5 Psi to bend the substrate. Since the substrate generally has a certain degree of tortuosity 'flowing upward relative to the electrolyte solution, the back pressure makes the substrate M < convex-shaped. The degree of bow $ varies depending on the pressure supplied by the pump system 8 5 9. Figure 12A shows that a preferred pouch 836 has a surface area sufficient to cover a relatively small peripheral portion on the back of the substrate, and its diameter is equal to the cathode contact ring 466. The geometry of the pouch assembly 470 can be changed. Therefore, the bag assembly can be made of a material that is less permeable to the fluid to cover the substrate. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇xlif). ------- ----------- · Installation -------- Order --------- Φ (Please read the notes on the back before filling this page) 519677 A7 B7 V. Description of the invention (8 21 Increased surface area. Figures 19 and 9 are schematic partial cross-sectional views of another embodiment of a substrate carrier combination. This different substrate carrier combination 1900 includes a pouch combination 470, as described above. It has an expandable pouch 836 connected to the back of the intermediate substrate carrier plate 1910. A part of the expandable pouch 836 is preferably sealed to the back surface 1912 of the intermediate substrate carrier plate 1910 by using an adhesive or other bonding material. ^ The front surface 1914 of the intermediate substrate carrier plate 1910 can be adjusted to receive the substrate 82 to be processed. An elastic O-ring 1916 is located in the annular groove 1918 on the front surface 1914 of the intermediate substrate carrier plate. 91 It is in contact with the surrounding part of the back surface of the substrate. Elasticity The mold ring 1916 provides a seal between the back surface of the substrate and the front surface of the intermediate substrate carrier plate. The intermediate substrate carrier plate preferably includes a plurality of holes 1920 extending through the plate and communicating with the fluid in the vacuum port 8 41. The plurality of holes 1 920 can assist the substrate carrier to fix the substrate with a vacuum suction force applied to the back surface of the substrate. According to another embodiment of the substrate carrier combination, the expandable pouch does not directly contact the substrate in process. Therefore, when the substrate is transported, the risk of the inflated pouch being cut or damaged is greatly reduced. The elastic O-ring 1 9 丨 6 is preferably plated or treated so that the hydrophilic surface contacts the substrate, as discussed above. The cathodic contact ring surface. The elastic O-ring 1 9 1 6 can be replaced to ensure proper contact and sealing with the substrate. Figure 25 shows another process of a head assembly with a rotatable head assembly 2410. Example: A rotary actuator is located on a cantilever beam and received on page 41. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) '(Please read first Note on the back, please fill in this page again)-· 1111111 · 11111111-Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 519677 A7 B7 V. Description of the invention () ^ Member department assembly to turn the head assembly during the substrate manufacturing process. This can be The rotating head combination 2410 is set on the head combination support 2452. The different head combination combination 2 4 5 2 and the rotatable head combination 2 41 〇 are provided on the main structure and are similar to those shown in FIG. 6 The head combination bracket 4 5 2 shown above and the head combination 41 0 are shown. The head combination bracket 2 4 5 2 includes a placement column 2454, a column cover 2455, and a cantilever beam 2456. The placement column 2454 is placed on the body of the main frame 214, and the column cover 2455 covers the top portion of the placement column 2454. The placement post 2454 preferably provides a rotational displacement, as indicated by arrow A1 ', to rotate the head combination bracket 2452 with respect to the vertical axis of the placement post. A cantilever beam 2456 extends laterally from the upper half of the placement column 2454 and is pivotally connected to the column cover 2455 at a pivot joint 2459. The rotatable head Shao 2401 is connected to the mounting slide 2460 located at the end of the cantilever beam 2 4 5 6. The placement slide 2460 guides the vertical movement of the head assembly 2410. A head lift actuator 2458 is located at the top of the placement slide 2460 to provide a vertical displacement of the head-shaft assembly 241. The lower end of the cantilever beam 2 4 5 6 is connected to the axis of the cantilever actuator 2 4 5 7 2 4 5 3 'This actuator is, for example, a pneumatic cylinder or a lead screw actuator, and is placed on the placement column 2454 Above. The cantilever actuator 2457 provides pivot movement of the cantilever beam 2456 relative to the joint 2 4 5 9 between the cantilever beam 2 4 5 6 and the column cover 2 4 5 5 as shown by arrow A2. When the cantilever actuator 2457 is recovered, the cantilever beam 2456 moves the head assembly 2410 out of the process chamber 42o. Movement of the head assembly 2410 provides the space needed to remove and / or replace the process chamber 420 from the plating process chamber 24o. When the cantilever actuator 2457 is extended, the cantilever beam 2 4 5 moves the head assembly 2 4 1 0 to the process chamber 4 2 0 so that the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 Public Love) (Please read the precautions on the back before filling out this page) Install tr --------- Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 Printed by A7 5. Description of the invention () Position the substrate in the head assembly 2 4 丨 0. The rotatable head combination 2 4 10 includes a rotary actuator 2 4 6 4 which is slidably connected to the slide holder 2460. The axis 2468 of the head lifting actuator 2458 passes through the lifting rail 2 4 6 6 connected to the body of the rotary actuator 2464. The shaft center 2 4 6 8 is preferably a shaft center of a lead screw type, so that the lifting guide 2466 can be moved to a different vertical position in the direction shown by the arrow A3. The rotary actuator 2464 is connected to the substrate carrier assembly 2 450 through the shaft center 2470 and rotates the substrate carrier assembly 2450, as shown by arrow A4. The substrate carrier assembly 2450 includes a pouch assembly, as described in Figures 12-15 and 19 above, and a cathode contact ring, as shown in Figures 7-10 and 18 above. Examples described. Rotating the substrate during the electric boat process generally enhances the deposition results. During the plating process, the head assembly is preferably rotated at a speed between about 2 rp (n and about 20 rpm. The head assembly can also be rotated. This head assembly can be lowered down to remove the seed layer and process on the substrate The electrolyte solution in the chamber is in contact with each other. The head assembly can also be raised to remove the seed layer on the substrate from the electrolyte solution in the process chamber. After the head assembly is lifted from the process chamber, the head is removed in order to enhance the removal. The remaining electrolyte solution on the combination, the head combination is preferably rotated at a high speed (for example, greater than 20 rpm). In one embodiment, the average hook degree of the deposited film has been improved to within 2%, that is, the thickness of the deposited film The maximum deviation is about 2% of the average film thickness, and the standard plating process generally achieves a uniformity within about 5.5%. However, the rotation of the head combination may not be achieved in some examples. Uniform electroplating, especially by adjusting the process parameters to reach page 43. This paper is sized to the Chinese National Standard (CNS) A4 (210 χ 297 mm) ----------- install- ------ Order --------- (Please read the back (Please fill in this page for the matters needing attention) 519677 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () For uniform plating deposition, such as chemicals in electrolyte solution, electrolyte solution flow and other parameters, etc. FIG. 6 shows a schematic cross-sectional view of the electroplating process chamber 400, and the substrate carrier assembly 450 is located above the process chamber 420. The process chamber 420 generally includes a bowl 430, a container body 472, and an anode assembly. 474 and filter 476. The anode combination 474 is preferably placed under the container body 4 7 2 and attached to the lower half of the container body 4 7 2 and the filter 4 7 6 is placed on the anode combination 474 and the container Between the bodies 472. The container body 472 is preferably a cylindrical body and contains electrically insulating materials such as ceramics, plastic, PLEXIGLAS®, iexane, pvc, CPVC, and PVDF. In addition, the container body 472 can also be made from plated metals such as stainless steel, nickel, and “. The plated metal is plated with an insulating layer, such as TEFLON® (EI du Pont de Nemours and Company of Ilmington, DE (Registered trademark), PVDF, plastic, rubber, and other materials, and will not dissolve in the electrolyte solution. This insulating layer is electrically insulated from the electrode, that is, the anode and cathode of the plating system. The size and shape preferably conform to the shape of the plated surface of the substrate and the substrate processed by the system, and are generally circular or rectangular. A preferred embodiment of the container body 4 7 2 includes a cylindrical ceramic tube having an internal diameter of approximately Substrate diameter or slightly larger. The inventors have found that in a required rotational displacement in a typical electroplating system, no rotation is required to obtain a uniform electroplating result when the size of the container body approximately matches the size of the plating surface of the substrate. The upper part of the trough body 472 extends radially outward to form a loop 478. This ring-shaped weir 478 extends beyond the electrolyte solution collector 440, page M. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------------- ----- ^ --------- (Please read the notes on the back before filling out this page) 519677 A7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Wall 446, and The electrolyte solution is allowed to flow into the electrolyte solution collector 44. The upper surface of the ridge 478 is preferably matched with the lower surface of the cathode contact ring 466. The upper surface of the weir 478 preferably includes an internal annular flat surface. Portion 480, middle collar portion 482, and outer slope portion 484. When the substrate is placed in the process position, the plated surface of the substrate is placed above the cylindrical opening of the container body 472. The surface below the cathode contact ring 466 and the annular weir 478 A gap is formed between the upper surfaces to allow the electrolyte solution to flow through. The lower surface of the cathode contact mount 466 is placed on the inner flat portion 480 and the middle inclined portion of the annular weir 478. The outer inclined portion 484 is inclined downward to Help electrolyte solution Into the electrolyte solution collector 44o. The lower half of the trough body 472 extends radially outward to form a lower half flange 486 to fix the container body 472 and the bowl 43o together. The outer dimension (circumference) is smaller than the opening 4 "size and the inner periphery of the electrolyte solution collector 440. This smaller-sized annular flange allows the process chamber 420 to be removed and replaced from the plating process chamber 400. Plurality The bolts 488 are preferably arranged on the annular flange 486 and extend downward through the bolt holes in the bowl 430. A plurality of movable fixing nuts 490 fix the process chamber 420 to the bowl 43 〇. A sealing ring 487, such as an elastic O-ring, is located between the container body 472 and the bowl 43 and the inside of the bolt 488 to avoid leakage of the process chamber 42. The nut / bolt group α allows the process The chamber 4 2 0 can be moved and replaced quickly and easily during maintenance. The filter 476 is preferably installed and completely covers the lower half opening of the container body 472, and the anode assembly 474 is located under the filter 476. The side wall 492

------------------- 1 --------- < Please read the notes on the back before filling this page) 519677 A7 B7 V. Description of the invention () Is located between the filter 476 and the anode combination 474. The filter 476, the side wall 492, and the anode assembly 474 are preferably fixed to the lower half surface of the trough body 472 with removable fasteners such as screws and / or bolts. In addition, the filter 476, the side wall 492, and the anode combination 474 may be movably fixed to the bowl 430. The anode assembly 474 preferably includes a consumable anode as a source of metal in the electrolyte solution. In addition, the anode assembly 474 may also include an anode that does not consume, and the metal to be plated is provided by the electrolyte solution supplied by the electrolyte solution replenishing system 22. As shown in Fig. 6, the anode assembly 474 is a self-enclosed module, which has a porous anode pad 494 and is preferably made of a metal such as copper metal. Alternatively, the anode pad 4 4 may be made of a porous material such as a ceramic or a polymer film. A soluble metal 496, such as high-purity copper of electrochemically deposited copper metal, is placed in the anode pad 494. The soluble metal preferably contains metal particles, metal wires, perforated sheets, and the like. This porous anode pad also acts like a filter, retaining particulates from dissolved metals in the anode pad. Compared with non-consumable anodes, consumable (ie, dissolvable) anodes provide & branches that provide an electrolyte solution that does not generate gas and reduce the need for frequent metal replenishment in the electrolyte solution. An anode electrical contact 498 is inserted through the anode pad 494 to provide an electrical connection of the dissolvable metal 496 from the power supply. The anode electrical contact 498 is preferably made of a conductive material that will not dissolve in the electrolyte solution, such as stainless steel and stainless steel with a bonding layer. The anode electrical contact 498 extends to the bowl 430 and is connected to the power supply. This anode electrical contact page 46 This paper size _ Home Standard (CNS) A4 specifications (210 ------------_ installed -------- ordered ---- ----- Refer to (Please read the precautions on the back before filling this page) 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () 498 It is best to include 4 points of thread 497 and seal ring 495 The threaded part of the fixing nut 499 can be used to fix the anode electrical contact 498 on the bowl 43. A sealing ring 495 such as an elastic liner is located between the fixing nut 499 and the bowl 430. Avoid leakage from the process chamber 42. The bowl 430 generally includes a cylindrical portion 502 and a bottom portion 504. The upper half of the annular flange 506 extends radially outward from the top of the cylindrical portion 502. Top The half annular flange 506 includes a plurality of holes 508 to match the number of bolts 488 of the half annular flange 486 below the container body 472. The bolts 488 pass through the holes 508, and the fixing nuts 49 are locked on the bolts. The upper half of the 488 is fixed with a ring-shaped flange 506 above the bowl 430 and the lower half of the container body 472 with a saddle-shaped flange 4 8 6. The upper half of the ring-shaped flange 506 is outside The size, that is, its perimeter, is preferably about the same as the outer dimensions of the lower half annular flange 486, that is, its perimeter. When the process chamber 42 is located on the main frame 214, the bowl 430 The lower half surface of the upper half annular flange 506 is placed on the supporting flange of the main frame 214. The inner circumference of the cylindrical portion 50 2 contains the anode combination 474 and the filter 476. The filter 476 and the anode The external dimensions of the assembly 474 are slightly smaller than the internal dimensions of the cylindrical portion 502. These relative dimensions may cause most of the electrolyte solution to flow through the anode assembly 474 before passing through the filter 4 7 6. The bottom portion 504 of the bowl 430 includes the electrolyte The solution inlet 510 'is connected to the electrolyte solution supply line of the electrolyte solution replenishing system 22. The anode combination 4 7 4 is preferably placed in the middle portion of the cylindrical portion 5 02 of the bowl 4 3 0. The structure of the anode combination 474 A slit can be provided as the electrolyte solution inlet on the anode combination 474 and the bottom surface portion 504 (please read the precautions on the back before filling this page)

519677 A7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Electrolyte solution flows between. A releasable connector connects the electrolyte solution inlet 510 and the electrolytic solution supply line, making the process chamber 420 easier to remove and replace. When the process chamber 420 requires maintenance, the electrolyte solution is discharged from the process chamber 420, and the flow of the electrolyte solution in the electrolyte solution supply line is interrupted and eliminated. The connector of the electrolytic solution supply line is loosened from the electrolytic solution inlet 5 and 0, and the electrical connection to the anode assembly 474 is also separated. The head assembly 410 is raised or rotated to clear the space to be removed from the process chamber 420. The process room 420 is then removed from the main frame 214, and then a new or repaired process room is placed in the main frame 2 1 4. In addition, the bowl 430 may be fixed on the supporting flange of the main frame 214 'and the container body 472 having an anode and a filter may be removed for maintenance. In this example, the nut fixing the anode assembly 474 and the container body 472 to the bowl 430 can be removed to assist the movement of the anode assembly 474 and the container body 472. The new or repaired anode assembly 4 7 4 and the container body 4 7 2 are then placed in the main frame 214 and fixed on the bowl 430. Figure 20 is a schematic cross-sectional view of an embodiment of a sealed anode. The sealed anode 2000 includes a permeable anode pad which can filter or capture the anode, precipitation, or particles generated by the dissolved metals in the anode plate 2004. As shown in Figure 20, the anode plate 2004 contains a piece of copper metal. The anode plate 2004 is preferably a high-purity, oxygen-free copper metal and is enclosed in a hydrophilic anode sealing film 2002. The anode plate 2004 is fixed and supported by a plurality of electrical contacts or feeds extending through the bottom of the bowl 430 through 2006. Electrical contacts or feeds extend through the anode seal through 2006. The paper size is subject to Chinese National Standard (CNS) A4 Rule 48 | (Please read the precautions on the back before filling this page).丨 519677 A7 B7 printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Sealing film 2002 to the bottom surface of anode plate 2004. The direction of the electrolyte solution is indicated by arrow A, which flows through the gap between the anode and the side wall of the bowl from the electrolyte & liquid inlet 5 10 located at the bottom of the bowl 430. The electrolyte solution also penetrates into the anode sealing film 2002 and flows into or out of the gap between the anode sealing film and the anode plate, as shown by arrow B. The anode_ # film 2002 preferably includes a hydrophilic porous film, such as a modified polyvinylidene fluoride film, having a porosity between about 60% and 80%, preferably about 70%, and a pore size Between about 0.025 microns and about 1 microns, preferably between about 0.1 microns and about 0.2 microns. An example of a hydrophilic porous membrane is Durapore Hydrophi 1 ic Membrane, available from Mi 11 ipore Corporation, a company based in Bedford, Massachusetts. When the electrolyte solution flows through the sealing film, the anode precipitates and particles generated by the dissolved anode are filtered or captured by the sealing film. Therefore, the sealing film can improve the purity of the electrolyte solution during the electroplating process, and defects generated on the substrate due to anode precipitation and contamination particles can be effectively reduced during the electroplating process. FIG. 21 is a schematic cross-sectional view of another embodiment of a sealed anode. Similar to the sealed anode of the first embodiment, the anode plate 2004 is fixed and supported by an electrical feed through 2006. The top sealing film 2000 and the bottom sealing film 2010 are located above and below the anode plate 2004, respectively, and are attached to a film support ring 2012 located around the anode plate 2004. The top and bottom sealing films 2008, 2010 contain the sealing film materials for the sealing anode of the first embodiment listed above. Compared with the sealing film, the film support ring 2012 should preferably contain a harder material, such as plastic or its paper size. Applicable to China National Standard (CNS) A4 (210 X 297 mm) • ϋ III nnn ϋ ϋ I n · innnnni aj »n ϋ ϋ ·» ϋ n I— I f Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention . A bypass fluid inlet 2 0 1 4 passes through the bottom of the bowl 4 3 0 and the bottom of the sealing film 2010 to introduce the electrolyte solution into the gap between the sealing film and the anode plate. A bypass outlet 2 0 1 6 is connected to the membrane support ring 2 0 1 2 and extends through the bowl 4 3 0 to assist the excess electrolyte solution with the anode sink or the generated particles to flow out of the sealed anode into the waste tank ( Not shown). The electrolyte solution flowing in the bypass fluid inlet 2014 and the main electrolyte solution inlet 510 is preferably controlled individually by the fluid control valves 2 0 2 0 2 0 2. Individual fluid control valves 2020, 2022 are placed on the fluid lines connected to the inlet, respectively. The pressure of the fluid in the bypass fluid inlet 2014 is preferably maintained at a higher pressure than in the main electrolyte solution inlet 510. The electrolyte solution in the bowl 430 comes from the main electrolyte solution inlet 510 as indicated by arrow A, and the flow of the electrolyte solution in the sealed anode 2000 is indicated by arrow B. Part of the electrolyte solution introduced into the sealed anode flows out of the sealed anode through the bypass outlet 2016. After a dedicated bypass electrolyte solution is supplied to the sealed anode, the anode precipitate or particles generated by the anode dissolution can be continuously removed by the anode, thereby improving the purity of the electrolyte solution during the plating process. Fig. 22 is a schematic sectional view of a third embodiment of a sealed anode. The sealed anode 2000 of this embodiment includes an anode plate 2002, a top sealing film 206, a bottom sealing film 2010, and a film support ring 2010. The anode plate 2002 is fixed and supported on a plurality of electrical feedthroughs 2006. The top and bottom sealing films 2008 and 2000 are attached to the film support ring 2012. A bypassed fluid inlet 2014 passes through the bottom of the bowl 430 and page 50. This paper size applies to China National Standard (CNS) A4 (210 X 297 meals) ------------- ------ ^ --------- (Please read the precautions on the back before filling this page) 519677 A7 B7 V. Description of the invention The gap between the film and the anode plate. The third embodiment of the sealed anode preferably contains the sealed anode material mentioned in the first and second embodiments. The bottom sealing film 2010 according to the third embodiment includes one or more openings 204 above the main electrolyte solution inlet 5 10. This opening 2 0 2 4 is adapted to receive the electrolyte solution flow from the main electrolyte solution inlet 51 0 and preferably has a size approximately the same as the size of the surrounding area inside the main electrolyte solution inlet 51 0. The electrolyte solution flow from the main electrolyte solution inlet 51 ° is indicated by head A, and the electrolyte solution flow in the sealed anode is indicated by arrow B. Part of the electrolyte solution flows out through the bypass outlet 2016, and carries part of the particles produced by anode precipitation and anode dissolution. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ ^ ---- (Please read the precautions on the back before filling out this page) Φ Figure 23 is another one of the sealed anode A schematic cross-sectional view of the embodiment. The sealed anode 2000 of this embodiment includes an anode plate 2002, a top sealing film 2006, a bottom sealing film 2010, and a film supporting ring 2012. The anode plate 2000 was fixed and supported on a plurality of electrical feeds through 2000 g. The top and bottom sealing films 2 0 8 and 2 0 10 are attached to the film support ring 2012. A bypassed fluid inlet 2014 passes through the bottom of the bowl 430 and the bottom sealing film 2 10 to introduce the electrolyte solution into the gap between the sealing film and the anode plate. The sealed anode of this embodiment preferably contains the sealed anode materials of the first and second embodiments described above. The electrolyte solution preferably flows through the bypass fluid inlet 20 14 and the main electrolyte solution inlet 5 1 0 is controlled by the control valves 2 0 2 and 2 2 2 respectively. The electrolyte solution flow from the main electrolyte solution inlet 5 10 is indicated by arrow A. The flow of the electrolyte solution through the sealed anode is indicated by arrow B. For this example, the paper size on page 51 of the anode sink is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) 519677 A7 B7. 5. Description of the invention As the electrolyte solution passes through the membrane, it is filtered and captured by the sealing membrane. FIG. 16 is a schematic diagram of the electrolyte solution replenishing system 2 2 0. The electrolyte solution replenishing system 220 provides an electrolytic solution in the plating process chamber during the plating process. The electrolyte solution replenishing system 22 0 generally includes a main electrolyte solution tank 6 0 2, a feed module 6 0 3, a filter module 6 0 5, a chemical analysis module 6 1 6, and waste electrolyte discharge 6 2 〇 An encapsulation solution disposal system 6 2 2 connected to the analysis module 6 16. One or more controllers control the composition of the electrolyte solution in the king tank 602 and the operation of the electrolyte solution replenishing system 22o. These controllers can preferably be operated independently but also integrated with the controller 2 2 2 of the plating system level σ 2 0 0. The main electrolytic solution tank 602 provides an electrolytic solution storage tank, and includes an electrolytic solution supply line 612, which is connected to each of the plating princes via a fluid pump 608 and a valve 607. A heat exchanger 624 or a heater / cooler disposed in the main tank 602 and thermally connected thereto controls the temperature of the electrolyte solution stored in the main tank 602. The heat exchanger 624 is connected and operated by the controller 610. The feed module 603 is connected to the main tank β 02 with a supply line, and includes a plurality of source tanks 606, or a feed bottle, a plurality of valves 609, and a controller 611. The source tank 606 contains chemicals that make up the electrolyte solution and generally also includes a deionized water source tank and a copper sulfate (CuS04) source tank to make up the electrolyte solution. Other source tanks 606 may contain sulfuric acid (H2S04) 'hydrochloric acid (HC1) and various additives such as ethylene glycol. Each source slot is color-coded and connected with a unique mating outlet connector to a mating inlet connector in the feed module. Since the source slot is color-coded, page 52, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ▼ Install ------ --Order --------- · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description () code On the source slot, errors caused by human error can be effectively reduced when the source slot is exchanged or replaced. Deionized water source tanks are also recommended to provide deionized water for system cleaning during system maintenance. The valve 609 and each source tank 606 connected to it can regulate the chemicals flowing to the main tank 602, and it can be any of several commercially available valves such as butterfly valves' throttles and the like. The activation of the valve 6 0 9 is performed by the controller 6 11. The controller 6 丨 丨 preferably is connected to the controller 2 2 2 to receive the message. The electrolytic solution filtering module 605 includes a plurality of filtering tanks 604. The electrolyte solution return line. 6 14 is connected between each process chamber and one or more filter tanks 604. When the electrolyte solution is returned to the main tank 602 for reuse, the 'filter tank 604' removes unnecessary components from the used electrolyte solution. The main tank 602 is also connected to the filter tank 604 to assist the recycling and filtration of the electrolytic solution in the main tank 602. After the electrolyte solution is recycled from the main tank 602 through the filter tank 604, the unnecessary components in the electrolyte solution can be continuously removed by the filter tank β 0 4 to maintain a certain degree of purity. In addition, recycling the electrolyte solution between the main tank 602 and the filter module 605 allows the different chemical components in the electrolyte solution to be completely mixed. The electrolyte solution replenishing system 220 also includes a chemical composition analyzer module 616 to provide instant chemical composition analysis of the chemical composition of the electrolyte solution. The analyzer module 616 is fluidly coupled to the main tank 602 by a sampling line 6 1 3 and is coupled to the waste treatment system 622 by an outlet line 621. The analysis module β 1 6 generally includes at least an analyzer and a controller to operate the analyzer. Number of analyzers and electrolysis required for a special processing tool Page 53 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ---------------- ------------- (Please read the notes on the back before filling out this page) 519677 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The first analyzer can be used to monitor the concentration of organic substances, and the second analyzer can be used to monitor the chemical composition of inorganic substances. In the specific embodiment shown in FIG. 16, the chemical composition analyzer module, 'and 6 1 6 ^ ^ Automatic Titration Analyzer 6 1 5 and a Cyclic Power Stripper (CVS) 617. Both analyzers can be obtained from different suppliers. The more advantageous automatic titration analyzer can be used by Parker

Systems), and the cycle power stripper can be obtained from EII. This automatic titration analyzer 615 determines the concentration of inorganic substances such as copper chloride and acid. CVS6 1 7 determines the concentration of organic substances, such as different additives used in the electrolyte solution and by-products produced during the process, both of which are returned from the process chamber to the main tank 602. The analyzer module shown in Figure 6 is just an example. In another embodiment, each analyzer is coupled to the main electrolyte failure tank with a different supply line and is operated by a different controller. Those skilled in the art will appreciate other embodiments. During operation, a sample of the electrolyte solution flows through the sampling line 613 to the analyzer module 616. Although this sample can be taken periodically, it is best to have continuous encapsulation> Valley fluids flow into the analyzer module 6 1 6. A portion of the sample is sent to the automatic titration analyzer 615 and a portion is sent to the CVS617 for proper analysis. The controller 619 initializes the command signals to operate the analyzers 615, 617 and generate data. The information from the chemical composition analyzers 6 and 5 is then passed to the controller 222. The controller 222 processes this message and transmits a signal including a user-defined chemical dose parameter to the feed controller 6 11. The received message is used to provide the operation of one or more valves. Please read the notes on the back before filling out this page) 519677 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. What is desired in the entire electroplating process, and preferably is. The chemical composition of the fixed electrolyte solution. The waste electrolyte solution from the analysis module then flows to the waste treatment system 622 through the outlet line 621. Although the preferred embodiment utilizes Real-time monitoring and adjustment of the electrolyte solution, but different methods can still be used. For example, the feed module 603 can be manually controlled by the operator by observing the output valve provided by the chemical analysis module 6 丨 6. The system software should preferably allow automatic Both the real-time adjustment mode and the operator's manual mode. Furthermore, although multiple controllers are shown in Fig.6, a single controller can also be used to operate different components, such as the chemical analyzer module 616 , Feed module 603, and heat exchanger 6 24. Other embodiments will be apparent to those skilled in the art. 0 Electrolyte solution replenishment system 2 2 0 also includes a connection to the electrolyte solution waste treatment system. 6 2 2 Electrolyte solution waste discharge 6 2 0, in order to safely dispose of electrolyte solution, chemicals and other fluids used in the plating system. The electroplating chamber preferably includes 620 waste electrolyte solution discharge, or electrolyte solution waste The physical treatment system 622 is directly connected to the pipeline. The electrolyte solution waste discharge 620 discharges the electrolyte solution of the plating room without returning to the electrolyte solution replenishing system 2 2 0. The electrolyte solution replenishing system 2 2 0 preferably also includes a squeeze line so that Discard the excess electrolyte solution from the electrolyte solution waste discharge 620. The electrolyte solution replenishment system 220 also includes one or more except for page 55. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). '. -------- ^ --------- (Please read the notes on the back before filling out this page) 519677 Intellectual Property of the Ministry of Economic Affairs Printed by employee consumer cooperative A7 B7 V. Description of the invention () The gas module 630 can remove unwanted gas from the electrolyte solution. The degas module generally contains a membrane to separate the gas generated by the fluid passing through the degas module ' And the real system to remove the released gas. The degassing module 6 3 0 is best placed on the electrolyte solution supply line 61 2 near the process chamber 24 0. The degassing module is preferably as close to the process chamber as possible. 24〇 Therefore, most of the gas from the electrolyte solution replenishment system can be removed by the degassing module before the electrolyte solution enters the process chamber. Each degassing module preferably includes two outlets to supply the degassed electrolyte The solution goes to the two process chambers 2 4 0 of each process station 2 8. In addition, a degassing module 630 can also be supplied to each process room. This degassing module can be placed in many different positions. For example, this degassing module can be placed in different locations in the electrolyte solution replenishment system, such as along the filter section or in a closed loop system with the main tank or process chamber. In another embodiment, a degassing module is located on the line of the electrolyte solution supply line 6 12 to provide the degassed electrolyte solution to all the process chambers 240 of the electron-chemical deposition system. In addition, a different degassing module is located on the line of the deionized water supply line or in a closed loop to remove oxygen from the deionized water source. Since deionized water is used to clean the process substrate, free oxygen is best removed before the deionized water reaches the SRD module, so the copper electroplated metal is less likely to be oxidized during the cleaning process. The degassing module is a well-known technology and commercial implementation can be easily obtained and used in different applications. Commercially available degassing modules are from Millipore, located in Bedford, Massachusetts. An example of the degassing module 630 shown in FIG. 26a includes a water-repellent film 6 3 2 with a fluid (ie, an electrolyte solution), a passage page 56. The paper size is applicable to the Chinese National Standard (CNS) A4 Specifications (210 X 297 public love) -------! · Install -------- order --------- Φ (Please read the precautions on the back before filling this page) 519677 A7 B7 I —.... — 5. Explanation of the invention () 6 3 4 is on one side of the film 6 3 2. The vacuum system 6 3 6 is arranged on the other side of the film. The degassing module seal 638 includes an inlet 640 and one or more outlets 642. When the electrolyte solution passes through the degassing module 630, the gas and other microbubbles in the electrolyte solution are separated from the electrolyte solution by the drainage film and removed by the vacuum system. Another embodiment of the degassing module 630 ', as shown in Fig. 26b, includes a tubular drainage film 632, and a true system 6 3 6 ^ electrolyte solution system arranged around the tubular drainage film 6 3 2 It is introduced into the tubular drainage membrane, and the electrolyte solution passes through the fluid passage 6 3 4 in the tube. The water-repellent membrane separates the gas in the electrolyte solution from other microbubbles, and the pipe is connected to a vacuum system 6 3 6 to remove the separated gas. More complex degassing module designs have also been carefully considered, including electrolyte solution designs with curved paths through the membrane and other multi-stage degassing modules. Although not shown in Figure 16 ', the electrolyte solution replenishing system 2 2 0 also includes some different components. For example, the electrolyte solution replenishment system 220 preferably also includes one or more additional chemical storage tanks as a substrate cleaning system, such as an SRD station. Double pipelines can also be used to connect hazardous materials to provide safe transfer of chemicals throughout the system. Alternatively, this electrolyte solution replenishing system 220 may also include an electrolyte solution processing system connected to an additional or external source to supply additional electrolyte solution to the plating system. Figure 17 is a schematic cross-sectional view of one embodiment of a rapid thermal annealing (RTA) reaction chamber. The RTA reaction chamber 211 is preferably connected to the load station 210, and the substrate is transferred into and out of the RTA reaction chamber using the load station transfer robot arm 228. The paper size applies to Chinese National Standard (CNS) A4 specification (21〇χ297 (Please read the precautions on the back before filling out this page) Zero-loading --- tr --------- Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 519677 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics A7 B7 V. Description of the invention () 211. The plating system shown in Figures 2 and 3 preferably includes two RTA reaction chambers 211 placed on both sides of the load station 210, which is equivalent to the symmetrical design of the load station 210. The RTA reaction chamber is generally a known technology, and the general RTA reaction chamber is used to enhance the properties of the deposition material in the substrate processing system. A variety of RTA reaction chamber designs, including hot plate design and hot light bulb design, can be used to enhance the plating results. One of the particularly useful RTA reaction chambers is the WxZ reaction chamber, available from Applied materials, Inc., Santa Clara, California. Although described herein as hot-plate RTA reaction chambers, other RTAs The reaction chamber can also be used. The RTA reaction chamber 211 generally includes a pad 902, a heater plate 904, a heater 907, and a plurality of substrate support bolts 906. The pad 902 includes a base 908, a side wall 910, and a top 912. The cooling plate 913 is most It is located below the top 912 of the paddock. In addition, the cold slab can also be integrated into a part of the top 9 2 of the paddock. The reflector insulation plate 9 1 4 is most positioned above the base 908 in the paddock 9 02. This reflector Insulation plate 914 is generally made of quartz, aluminum or other materials that can withstand high temperatures (greater than about 50 ° C). This reflector insulation plate is used as a thermal insulation between the heater 9 07 and the paddock 9 02 The insulating disc 914 can also be plated with a layer of reflective material such as gold in order to conduct heat back to the heater plate 906. The heater plate 904 has a larger mass compared to the substrate processed in the system. The heater plate is best Made of, for example, silicon carbide, quartz, or other materials that do not react with the surrounding gas or with the substrate material in the RTA reaction chamber 211. The heater 907 generally includes a resistive heating element or a conductive / radiative heating source And located on heater board 9 6 和 Reflector Insulating Disk No. 58 | This paper size applies to China National Standard (CNS) A4 (210 X 297 ^^ 1-- ^^ ------------------ ---------- (Please read the notes on the back before filling out this page) 519677 Printed by A7 B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of Invention () 9 1 4 The heater 9 0 7 is connected to a power source 9 i 6 to supply the required energy to heat the heater 907. The thermocouple 920 is most located in the duct 922, passes through the base 908 and the insulating disc 914, and extends into the heater plate 904. The thermocouple 9 2 0 is connected to the controller, which is the system controller described below and provides the measured temperature to the controller. The controller increases or decreases the amount of heat supplied to the heater 907 based on the measured temperature and the required annealing temperature. The paddock 90 2 preferably includes a cooling element 918 located outside the paddock 902 and a sidewall 9 10 in thermal contact to cool the paddock 902. In addition, one or more cooling channels (not shown) are formed in the side wall 9 10 to control the temperature of the paddock 90 2. The cooling plate 913 is located on the inner surface of the top plate 912, and can cool the substrate near the cooling plate 913. The RTA reaction chamber 211 includes a slit valve 922 on the side wall 910 of the enclosure 902 to assist substrate transfer and transfer from the rtA reaction chamber. The slit valve 92 2 selectively seals the opening 9 2 4 on the side wall 9 1 0 of the paddock. This opening 9 2 4 can communicate with the load station 210. See Figure 2. The load station transfer robot 228 can transfer substrates to and from the RTA reaction chamber through the opening 924. The substrate support bolt 906 preferably includes a member having a tapered end and is composed of quartz, alumina, silicon carbide, or other high temperature resistant materials. Each substrate support peg 906 is located in a tubular conduit 926, which is made of a heat and oxidation resistant material and extends through the heater plate 904. The substrate supporting pin 906 is connected to the rising plate 9 2 8 so as to move the substrate supporting pin 906 in a uniform manner. The rising plate 928 is connected to an actuator 930, such as a stepping motor, via a rising shaft 932. Actuator 930 moves the rising plate 928 to help Page 59 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

It --- tr --------- 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The auxiliary substrate is positioned at different vertical positions in the RTA reaction chamber. The ascending shaft 932 extends through the base 908 of the enclosure 902 and is sealed by a sealing flange 934 located around the shaft center. To transfer the substrate to the RTA reaction chamber 211, the slitting valve 922 will be opened, and the load station transfer robot 2 2 8 will extend the mechanical blade with the substrate thereon to the RTA reaction chamber through the opening 924. The load station conveys the robot. The mechanical blade of the arm 228 places the substrate on the heater board 904 in the RTA reaction chamber, and the substrate support pin 906 extends upward to lift the substrate from the mechanical blade. The mechanical blade then retracts away from the RTA reaction chamber, and the slit valve 922 closes the opening. The substrate support pin 9 0 6 is then retracted to lower the substrate to a desired position on the heater plate 9 0 4. Alternatively, the substrate support bolt 906 can be fully retracted to directly contact the substrate with the heater board. The gas inlet 936 is preferably configured to pass through the side wall 910 of the pad 90 2 so that the gas selected during the annealing process can flow into the RTA reaction chamber 2 11. This gas inlet 9 3 6 is connected to a gas source 9 3 8 via a valve 9 40 to control the gas flowing into the RTA reaction chamber 211. The gas outlet 942 is preferably disposed in the lower half of the side wall of the paddock 902 to discharge the gas from the RTA reaction chamber. This gas outlet is preferably connected to a release / check valve 944 to prevent the atmosphere from flowing back into the room from outside the reaction chamber. Optionally, this gas outlet 942 can be connected to a vacuum pump (not shown) to draw the RTA reaction chamber to the required vacuum level during the annealing process. After the substrate is plated in the plating chamber and cleaned at the SRD station, it is then annealed in the RTA reaction chamber 211. The RTA reaction chamber 211 is preferably maintained at about atmospheric pressure, and the RTA reaction chamber 211 during the annealing process page 60. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- ------ Equipment -------- Order --------- (Please read the precautions on the back before filling this page) 519677 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs _______B7__ 5. Description of the invention () The oxygen content in () should be controlled to less than about 100ppm. The surrounding environment in the RTA reaction chamber 21 1 preferably contains a combination of nitrogen (NO or nitrogen (N2) and less than about 4% hydrogen (HO. The gas flowing into the RTA reaction chamber 211 is maintained at more than 20 liters / minute for control. The oxygen content is less than 1000 ppm. The plated substrate is preferably annealed at a temperature between about 200 ° C and about 450 ° C for about 30 seconds and 30 minutes, and most preferably at about Annealing between 2 50 ° C and about 4 0 ° C for about 1 minute and 5 minutes. RTA processes generally require an increase in temperature of at least 50 ° C per second. In order to provide the temperature required for the substrate during the annealing process Increasing the rate, the heater board is preferably maintained between about 35 ITC and 450 ° C. During the annealing process, the substrate is preferably placed at a distance of about 0 mm from the heater board (that is, in contact with the heater board) and about 2 The position between 0 mm. The controller 2 2 2 can control the operation of the RTA reaction chamber 2 11, including maintaining the required ambient environment and the temperature of the heater board in the rt A reaction chamber. After the annealing process is completed, the substrate support The peg 906 lifts the substrate to transfer it out of the RTA reaction chamber 2 11. Slitting valve 922 opens, the mechanical blade of the load station transfer robot arm 228 extends into the RTA reaction chamber and is placed under the substrate. The substrate support bolt 906 retracts and places the substrate on the mechanical blade 'and then the mechanical blade extends out of the RTA reaction chamber. The load station transfers the robotic arm 2 2 8 and then transfers the processed substrate to the card 2 2 2 for removal from the plating process system (see Figures 2 and 3). Referring back to Figure 2, the plating system platform 200 includes The controller 222 controls the functions of each component of the platform. The controller 222 is preferably placed on the King frame 21 4 and the controller includes a programmable microprocessor. The programmable microprocessor General use is specially for the control of electroplating. Page 61--I ---- I ------ I ---- ^ 0 I ------- (Please read the precautions on the back before filling in this (Page) Μ Μ

MI 3— MI I A7MI B7 "The description of the booklet is as shown in Figure 2. V. Invention Description () The software of all components of the system platform 200 is programmed. The controller 222 also provides power to the system components and includes control Panel 2 2 3 for the operator to monitor and operate the plating system platform 200. The control panel 2 2 3 shown in Figure 2 is an independent module and is connected to the controller 222 via a cable and provides operator operation In general, the controller 222 coordinates the operations of the load station 210, the RTA reaction chamber 211, the SRD station 212, the main frame 214, and the process station 218. In addition, the controller 222 can coordinate the electrolyte solution replenishment system 2 2 0 The controller supplies the electrolyte solution to the electroplating process. Typical substrate electroplating process. The substrate clips with a plurality of substrates are first loaded into the substrate clip receiving area 224 in the load station 210 of the electroplating system platform 200. The load The station transfer robot 228 takes the substrate out of the substrate slot in the substrate holder and places it on the substrate positioner 23. The substrate positioner 2 30 can decide and turn the substrate to the desired orientation so that The light is processed in the entire system. The load station transfer robot arm 228 then transfers the positioned substrate from the substrate positioner 230 and places it in one of the substrate slots of the substrate pass SRD 212 of the SRD # 212. The main structure transfer robot 胄取出 Remove the substrate from the substrate through the clip 238 and place the substrate for transfer by the webbed robot arm 248. The webbed robot arm m rotates its mechanical blade below the substrate, and the main frame transfers the mechanical blade to take out the substrate. In the webbed mechanical blade The mysterious suction gripper on the upper part can fix the substrate to the web-shaped mechanical blade, and this web-shaped robot arm turns the substrate from the surface-up position pi to the surface-down position. The web-shaped robotic arm 248 rotates the text The substrate with this surface facing down is on page 62 -------- ^ --------- (Please read the precautions on the back before filling out this page) The paper size of the paper is in accordance with the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 519677 A7 Β7 Ministry of Consumer Affairs 5. Description of the invention (in the substrate holder combination 450. The substrate is located below the substrate holder 464 but in the shade Above the pole contact ring 466. The web-like robot arm 248 then releases the substrate to place the substrate into the cathode contact ring 466. The substrate carrier 464 moves toward the substrate and the vacuum chuck secures the substrate to the substrate carrier 464. On the substrate carrier The capsule assembly 47 on the seat assembly 450 applies pressure to the back of the substrate to ensure electrical contact between the plated surface of the substrate and the cathode contact ring 466. The head Shao assembly 452 will be lowered to a processing position above the process chamber 42. The substrate at this position is below the plane above the annular weir 478 and is in contact with the electrolyte falling liquid in the process chamber 420. After the power supply starts, it supplies voltage and current to the cathode and anode to produce a plating process. The electrolyte solution is generally continuously added to the process chamber during the plating process. The electric power supplied to the cathode and the anode and the flow of the electrolyte solution are controlled by the controller 222. When the head assembly is lowered and during the plating process, it is preferable that the head assembly also rotates. When the electroplating process is completed, the head assembly 41 lifts the substrate carrier assembly and removes the substrate from the electrolyte solution. The head assembly is preferably rotated for a period of time to remove the residual I-degrading solution from the substrate carrier assembly. Substrate bearing centimeter < vacuum chuck and bladder combination is then released by the substrate carrier. The substrate substrate carrier rises to allow the web-shaped robot arm blade to take out the processed substrate from the cathode contact ring. The squat robotic arm rotates the webbed mechanical blade on the back of the substrate processed in the cathode contact ring, and then uses the true 2 suction gripper on the webbed mechanical blade to remove the substrate. The squat robotic arm rotates the webbed mechanical blade after the substrate leaves the combination of the substrate bearing seat, and turns the substrate from the surface down to the surface up position, and places the substrate on the main frame transfer mechanical blade. The main structure transfer robotic arm then transfers and aligns the processed substrates. Page 63 The paper size is suitable for national standards of the country (CNS; A4 specifications (21 () χ 2 criminals [· 装 -------- Order- -------- (Please read the notes on the back before filling this page)

I 519677

Description of the invention (Ministry of Economy Zhihui • Printed on the SRD module 236 with the property consumer cooperative of the Property Bureau. The SRD substrate carrier lifts the substrate, and the main structure transfer mechanical blade is withdrawn by the SRD module 236. Then Use deionized water or the combination of deionized water and cleaning solution described above to bounce the substrate in the SRD module. The substrate is then ready to be removed from the module. The load station transfer robot 228 is provided by the SRD module 236 The substrate is taken out, and the processed substrate is transferred to the RTA reaction chamber 2 11 for an annealing process to enhance the characteristics of the deposited material. The annealed substrate is then transferred by the load station robot arm 2 28 to the outside of the RTA reaction chamber 211 and Put it back into the substrate holder for removal by the plating system. The process described above can be executed on the plating system platform 200 at the same time. The plating system can be adjusted to provide multiple stacked substrate processing. The holes 1 920 and the vacuum port 841 communicate with each other in fluid, so as to use a vacuum suction force applied to the bottom surface of the substrate to help fix the substrate to the substrate carrier. According to another implementation of the head part For example, the expandable pouch does not directly contact the substrate in process, so the risk of cutting or damaging the expandable pouch during substrate transfer can be effectively reduced. The elastic type 0 ^ 1 91 6 is best Coated or treated to provide a hydrophilic surface, as discussed above for the surface treatment of electrical contact elements, so as to contact the substrate. The flexible 0-ring 1916 can be replaced as necessary to ensure proper contact and sealing of the substrate. -In the embodiment, the uniformity of the deposited film has been improved to within about 2%, that is, the maximum deviation of the thickness of the deposited film is about 2% of the average film thickness, and the average degree of uniformity achieved by standard plating processes is generally It is best to be within about 5.5%. The rotation of the head combination may not necessarily reach the 64th in some examples | This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^- ------ ^ --------- (Please read the notes on the back before filling out this page) 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of invention () To uniform Electroplating. Especially in For example, the uniformity of the plating deposition can be achieved by adjusting the process parameters without turning, and process parameters such as electrolyte solution chemistry, electrolyte solution flow, and other parameters. Referring back to FIG. 6, the section of the plating process chamber 400 In the figure, the head portion 450 is located above the process chamber 420. The process chamber 420 generally includes a bowl 430, a container body 472, an anode assembly 474, and a filter 476. The anode assembly 474 is preferably located below the container body 472 and Connected to the lower half of the container body 472, the filter 476 is located between the anode assembly 474 and the container body 472. The container body 472 is preferably a cylindrical gift containing electrical insulating materials, such as ceramic, plastic, PLEXIGUS⑧ (acrylic ), Lexane, PVC, CPVC, and PVDF. In addition, the container body 472 can be made of metal, such as stainless steel, nickel, and titanium, and plated with an insulating layer, such as TEFLON®, PVDF, plastic, rubber, and other combinations of materials, which are insoluble in electrolyte dripping and electrodes It is electrically insulated, that is, anode and cathode of the ECD system. The size of the container body 472 is preferably adjusted to suit the shape of the substrate plating surface and the substrate processed by the entire system. The shape of the substrate is generally either circular or rectangular. A preferred embodiment of the container body 472 includes a cylindrical ceramic tube having an internal diameter of about or greater than the diameter of the substrate. The inventors have discovered that when the size of the container body is adjusted to approximately the size of the plated surface of the substrate, the rotation required to achieve a uniform plating result in a typical ECD system is not required. The upper part of the trough body 4724 extends radially outward to form an annular weir 478. The annular weir 478 extends beyond the inner wall 446 of the electrolytic solution collector 44o, and allows the electrolytic solution to flow into the electrolytic solution collector 44o. Page 65 -------------------- Order --------- (Please read the > i notice on the back before filling in this page) 519677 A7

V. Description of the invention () The upper surface of the weir 478 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs should preferably be matched with the lower surface of the electrical contact ring 466. The upper surface of the annular weir 478 preferably includes an inner annular flat portion 480, a middle inclined portion 482, and an outer inclined portion. When the substrate is placed in the process position, the plated surface of the substrate is placed over the cylindrical opening of the container body. A gap is formed between the lower surface of the electrical contact $ 466 and the upper surface of the annular weir 478 to allow the electrolyte solution to flow through. The lower surface of the electrical contact ring 466 is placed on the inner flat portion 480 and the middle inclined portion of the annular weir 478. The outer inclined portion 484 is inclined downward to help the electrolyte solution flow into the electrolyte solution collector 44o. The lower half of the container body 472 extends radially outward to form a lower half annular flange 486 to fix the container body 472 and the bowl 43 together. The outer dimensions (ie, the circumference) of the annular flange 4 8 6 are smaller than the size of the opening 444 and the inner circumference of the electrolyte solution collector 44o. This annular flange 486 allows the process chamber 420 to be removed and replaced from the electroplating process chamber 400. The plurality of bolts 488 are arranged on the annular flange 486 at the top, and are fixed downward through the bolt holes in the bowl 430. A plurality of movable fixing nuts 490 fix the process chamber 420 on the bowl 430. A sealing ring 487, such as an elastic O-ring, is located between the container body 472 and the bowl 430 and the inside of the bolt 488 to prevent leakage of the process chamber 420. The nut / bolt combination allows the process room 40 to quickly and easily move and replace parts during maintenance. The filter 476 is preferably installed and completely covers the lower half opening of the container body 472, and the anode assembly 474 is located under the filter 476. The side wall 492 is located between the filter 476 and the anode assembly 474. Filter 476, side page 66_ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- • Installation -------- Order --------- · (Please read the notes on the back before filling this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Wall 492 and anode combination 474 are best Removable fasteners, such as screws and / or bolts, are fixed to the lower half of the container body 472. In addition, the filter 4 7 6, side wall 4 9 2 and anode combination 4 7 4 can also be fixed to the On the bowl 430. The anode assembly 474 includes a consumable anode as a source of metal in the electrolyte solution. In addition, the anode assembly 474 may also include an anode that does not consume, and the metal to be plated is provided by the electrolyte solution supplied by the electrolyte solution replenishing system 22. As shown in Fig. 6, the anode assembly 474 is a self-enclosed module, which has a porous anode pad 494 and is made of a metal to be electroplated, such as copper metal. Alternatively, the anode pad 494 may be made of a porous material such as a ceramic or polymer film. A soluble metal 496, such as high-purity copper of electrochemically deposited copper metal, is placed in the anode pad 494. The dissolvable metal 496 preferably contains metal particles, metal wires or perforated sheets. The porous anode pad 494 also functions as a filter / retainer, and can retain particles generated by dissolved metals in the anode pad 494. Compared with non-consumable anodes, consumable (ie, disintegrated) anodes provide an electrolyte solution that does not generate gas and reduces the need for frequent metal replenishment in the electrolyte solution. An anode electrical contact 498 is inserted through the anode pad 494 to provide an electrical connection of the dissolvable metal 496 from the power supply. The anode electrical contact 498 is made of a conductive material that does not dissolve in the electrolyte solution, such as titanium, platinum, and stainless steel with platinum plating. The anode electrical contact 498 extends beyond the bowl 430 and is connected to the power supply. The anode electrical contact 498 includes a threaded portion 497 and a seal ring 495. Fixed nut 499 page 67 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love)-*------------ install ------- -Order --------- (Please read the notes on the back before filling out this page) 519677 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. The threaded part of the invention description () can be used for the anode The electric contact 498 is fixed on the bowl 430. A sealing ring 4 9 5 such as an elastic gasket is located between the fixing nut 4 9 9 and the bowl 4 3 0 to avoid light exposure from the process chamber 4 2 0. The bowl 430 generally includes a cylindrical portion 502 and a bottom portion 504. The upper half annular flange 50 6 extends radially outward from the top end of the cylindrical portion 50 2. The upper half annular flange 506 includes a plurality of holes 508 to match the number of bolts 488 of the lower half annular flange 486 of the container body 472. The bolt 488 passes through the hole 508, and the fixing nut 490 is locked on the bolt 488 to fix the upper annular flange 506 of the bowl 430 and the lower annular flange 486 of the container body 472. The outer dimensions of the upper half annular flange 506, i.e. its perimeter, are preferably about the same as the outer dimensions of the lower half annular flange 486, i.e. its perimeter. When the process chamber 420 is located on the main frame 214, the lower half surface of the annular flange 506 on the upper half of the bowl 430 is placed on the supporting flange of the main frame 214. The inner circumference of the cylindrical part 50 2 contains the anode combination $ 7 4 and the filter 4 7 6. The external dimensions of the filter 4 7 6 and the anode combination 4 7 4 are slightly smaller than the internal dimensions of the cylindrical portion 50 2. These relative sizes can cause most of the electrolyte solution to flow through the anode assembly 474 before passing through the filter 4 7 6. The bottom portion 504 of the bowl 430 includes an electrolyte solution inlet 510 'which is connected to the electrolyte solution supply line of the electrolyte solution replenishing system 220. The anode assembly 4 7 4 is preferably placed in the middle of the cylindrical portion 502 of the bowl 4 3 0. The structure of the anode assembly 474 can provide a gap as the electrolyte solution flow between the anode assembly 474 and the electrolyte solution inlet 51 of the bottom surface portion 504. Page 68

This paper size applies to China National Standard (CNS) A4 specifications (210 X ----------- installed -------- order --------- (please read the back first) Please pay attention to this page and fill in this page) 519677 A7 B7 V. Description of the invention (A releasable connector is best connected to the electrolyte solution inlet 510 and the electrolyte solution supply line. This releasable connector can make the process chamber 4 2 0 easier Remove and replace. When the process chamber 420 needs maintenance, the electrolyte solution is eliminated by the process chamber 420, and the electrolyte solution flow in the electrolyte solution supply line is interrupted and eliminated. The connector of the electrolyte solution supply line is from the electrolyte solution inlet 5 1 0 Relax, and the electrical connection to the anode assembly 474 is also separated. The head assembly 410 will be raised or rotated to clear the space to be removed from the process chamber 420. Then the process chamber 420 is removed from the main frame 214 The new or repaired process room is placed in the main frame 2 j 4 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs X Consumer Cooperatives In addition, the bowl 430 can be fixed to the supporting flange of the main frame 214 and has an anode and Filter container The body 472 can be removed to maintain the nuts in this example 'fixed anode assembly 4 7 4 and container body 4 7 2 to bowl 430 to assist the movement of anode assembly 474 and container body 472. New The repaired or repaired anode assembly 474 and the container body 472 are then placed in the main frame 214 and fixed on the bowl 430. Figure 20 is a schematic cross-sectional view of an embodiment of a sealed anode. The sealed anode 2000 includes The anode paddock, which can filter or capture the metal produced by the anode plate 2004, anode precipitation, or particles. As shown in Figure 20, the anode plate 2004 contains a piece of copper metal. The anode plate 2004 is preferably a copper metal of high purity A, tst, and purity, and is enclosed in a hydrophilic anode sealing film 2002. The anode plate 20 04 extends from a plurality of bowls. Lightning material at the bottom of the 430 is not limited. The electrical contacts or feedthroughs are fixed and supported through 2006. The electrical contacts or feedthroughs extend through the anode cover. Page ----------- install -------- order --------- (Please read the back Note: Please fill in this page again.) 519677 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs. 5. Description of the invention () Sealing film 2002 to the bottom surface of anode plate 2004. The flow of electrolyte solution is indicated by arrow A, which is located in the bowl. The electrolyte solution inlet 5 10 at the bottom of the object 43 flows through the gap between the anode and the side wall of the bowl. The electrolyte solution also penetrates into the anode sealing film 2002 and flows into or out of the gap between the anode sealing film and the anode plate. As shown by arrow B. The anode sealing film 2000 preferably contains a hydrophilic porous film, such as a modified polyvinylidene fluoride film, having a porosity between about 60% and 80%, preferably about 70%, and a pore size The size is between about 0.005 micron and about 1 micron, preferably between about 0 "micron and about 0.2 micron. An example of a hydrophilic porous film is

Durapore Hydrophilic Membrane, which is available from Millipore Corporation, a Bedford, Massachusetts-based company. When the electrolyte solution flows through the sealing film, the anode precipitates and particles generated by the dissolved anode are filtered or captured by the sealing film. Therefore, the sealing film can improve the purity of the electrolyte solution during the electroplating process, and defects generated on the substrate due to anode precipitation and contamination particles can be effectively reduced during the electroplating process. 2. Substrate receiving seat Fig. 25 is a schematic partial cross-sectional view of another embodiment of the substrate bearing seat 14 of the embodiment shown in Fig. 6. In the embodiment of the substrate carrier 14 shown in FIG. 25, the substrate supported by the substrate carrier can be extended through the vertical axis of the substrate and rotated. The substrate carrier 14 includes a rotatable crotch assembly 2 410 and a head assembly bracket 2 4 5 2. The head combination bracket 2452 includes a placing column 2454, a supporting shaft 2453, a column cover 2455, page 70. This paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 meals). ---- Qing Read all 璜 ι δι. The main thing is the real nest of the year ^ 1) Order --------- 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention () Cantilever 2 4 5 6 , Cantilever actuator 2 4 5 7 and a pivot joint 2 4 5 9. The placement column 2454 is placed on the body of the main frame 214, and the column cover 2455 covers the top portion of the placement column 2454. The placement column 2454 preferably can provide a rotation function, as shown by arrow A1, which is rotated relative to the vertical axis of the placement column, so that the head combination bracket 2452 is also rotated along this vertical axis. The cantilever beam 2456 extends laterally from the upper half of the placement column 2454 and is axially connected to the pivot joint 2 4 5 9 and the column cover 2 4 5 5. The rotatable head assembly 2 4 1 0 is connected to the placement slide 2 4 6 0 at the end of the cantilever beam 2 4 5 6. Set the vertical movement of the slide 2 4 6 0 seeker Shao 2 410. A head lift actuator 2458 is located at the top of the placement slide 2460 to provide a vertical displacement of the head assembly 2 410. The lower end of the cantilever beam 2456 is connected to the axis 2453 of the cantilever beam actuator 2457, which is, for example, a pneumatic cylinder, a lead screw actuator, or a servo motor. A cantilever actuator 2457 is placed above the placement column 2454. The pivot joint 2459 connects the cantilever beam 2456 and the column cover 2454 axially. Cantilever actuator 2457 provides pivoting movement of the cantilever beam 2456 relative to the joint 2459 between the cantilever beam 2456 and the column cover 2455, as shown by arrow A2. When the cantilever actuator 2457 is retracted, the cantilever beam 2456 moves the head assembly 2410 out of the process chamber 420, as shown in the $ 6 figure. The movement of the head assembly 2410 provides the required space to be removed from the plating process chamber 24o and / or to replace the process t 420. When the head assembly is removed from the process chamber, the substrate can be added or removed from the neck assembly. Rotating the head assembly 2410 with a pivot joint 2459 makes the substrate and the process chamber at an angle. When the cantilever actuator 2457 is extended, the cantilever beam 2456 moves the head assembly 2410 to the process room. Page 71 This paper standard applies to Chinese national standards ((: ϋSpecification (21G χ 297----------- 丨丨 · Assembly -------- Order --------- Φ (Please read the notes on the back before filling this page) 519677 A7 B7 V. Description of the invention () 420 in order to be in the process position Place the base plate in the head assembly 2410. The rotatable head assembly 2410 includes a rotary actuator 2464 to be slidably connected to the placement slide 24 60. The shaft 2468 of the actuator 2458 is lifted on the head Through the lifting guide 2466 connected to the body of the rotary actuator 2464. The shaft center 2468 is preferably a lead screw type shaft center to move the lifting guide 2 4 6 6 to a different direction shown by the arrow A 3 The vertical position of the actuator. The rotary actuator 2464 is connected to the substrate carrier assembly 2 450 via the axis 2470 and rotates the substrate carrier assembly 2450, as shown by arrow A4. The rotation of the substrate during the plating process generally enhances the deposition result. When the head combination rotates between about 0rpm and about 200rpm (preferably about 10-4 0RPM). When the substrate and / or When the substrate carrier is immersed in the electrolyte solution, if the substrate and the substrate carrier rotate at a rotation speed above the 200RPM limit, the fluid disturbance will be transmitted to the electrolyte solution. When the head assembly is lowered to bring the substrate and the electrolyte solution in the process chamber into contact Or, when the head assembly is lifted to separate the substrate from the electrolyte solution in the process chamber, the head assembly can also be rotated. When the head assembly is lifted from the process chamber, it is preferably rotated at a high speed of about 250 0RPM (Preferably from about 25 rpm to 2500 RPM) to remove the residual electrolyte solution from the head assembly. Figure 27 shows a schematic cross-sectional view of one embodiment of a rotatable head assembly 2410, which can be included in the first In the substrate carrier 14 of the embodiment shown in Fig. 25, the rotatable head assembly 2410 includes a substrate carrier assembly 2450, a rotary actuator 2464, a shaft guard 2763, a shaft center 2470, and electrical feed. Through 2767, electrical conductor 2771, and pneumatic feed through 2773. Rotary actuator 2464 includes a head turning housing 2760 and a head. Page 72 This paper applies Chinese National Standard (CNS) A4 regulations. (210 X 297 mm) (Please read the notes on the back before filling out this page)-«n an n I ϋ nn -1, · n in nn in nn I-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 519677 A7 V. Description of the invention () Rotating motor 2706. The head-turning Ma Yun Z706 contains a hollow coil part 2775 and a magnetic rotating element 2776. Secondary 6 A 2-Spring ring part 2775 rotates the magnetic rotating element 2776 along the vertical axis in the manner of conventional motor technology. The base plate bearing seat combination 2450 includes ττw. An adult shield 2720, a contact housing 2765, a rotating base 2799, a pusher 66, an electric contact element 67, and a spring combination 2 7 3 2 are pushed. The contact housing 2765 and the elastic yellow combination ⑽ are generally ring-shaped, and these two elements cooperate with each other to provide a combined rotation. The spring set 纟 2732 includes an upper spring surface 2728, an elastic folding box connector 2729, and a lower elastic dream surface 2738. The sealing element 275 1 seals the fluid passage between the upper yellow surface 2-28 and the pushing plate 66. The sealing element 2753 seals the fluid passage between the lower spring surface 2 7 3 8 and the contact case 2 7 6 5. Self-power is an electrical contact element 67 that is supplied to the seed layer on the contact substrate to provide the required voltage between the anode 16 and the seed layer on the substrate to affect the plating process. Electricity is supplied by the controller 2 2 2 to the electrical contact element 67 via the electrical feedthrough 2 7 6 7 and the contact housing 2 7 6 5. The electrical contact element 67 is in physical and electrical contact with the seed layer on the substrate. The axis 2470, the contact housing 2765, the spring combination 2732, the push plate 66, the electrical contact element 67, the rotating base 2799, and the base plate 22 (fixed between the push plate 66 and the electrical contact element 67) are the same The combination units are all rotated along the longitudinal axis of the head combination 2410. The head rotation motor 2706 provides a driving force to rotate the above-mentioned element along its vertical axis. The vacuum control system is provided by a pneumatic feed penetrating through the 2773 to a part of the rotatable head assembly 2410 to control the push plate relative to the electrical contact element. Page 73 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) ------------. Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 V. Description of Invention (Location of 67 Pneumatic feed can provide vacuum degree through the 2773 package controllable vacuum supply 2790, sleeve element 2792, fluid conduit Aw, surrounding groove 2795, fluid hole 2796, and fluid channel mi sleeve element 2792 can be Different elements, or a part of the axis as shown in Figure 27. A peripheral groove 2795 extends in the sleeve element 2792 along the periphery of the axis 247 °. Pneumatic feeding penetrates the vacuum degree of the supply pressure tank 2740 The structure of the pressure tank can maintain positive air pressure or vacuum, and is related to the structure of the head combination 2410. The fluid hole 2796 communicates with the surrounding grooves. The fluid hole 2796 extends from the surrounding groove 2795 axially through the axis 247 and reaches Bell Heart 247G The fluid channel 2798 extends through the fluid hole 2796 which contacts the housing 2765 ° at the bottom of the shaft center and the fluid channel 2798 communicates fluid. The inner surface of the sleeve member 2792 and the outer surface of the shaft center 2470 have a small gap, such as about 0 · The size is 002 inches, so there can be relative rotation between the two elements. The degree of vacuum is applied from the vacuum supply 2790 to the inner surface of the sleeve element 2792 and the surrounding groove 2795 through the fluid conduit 2794. The fluid hole 2796 is added to the fluid channel 2798 and the waste groove 2740. Since the gap between the sleeve element 2 7 9 2 and the shaft center 2 4 7 0 is very small, it is added to the inner surface of the sleeve element 2 7 9 2 The degree of vacuum passes through the surrounding groove 2 7 9 5 to the fluid hole 2 7 9 6. The small gap will restrict air from entering between the sleeve element 2 7 9 2 and the external surface of the shaft center 2 470. Therefore, the controllable The degree of vacuum provided by the vacuum supply 2790 extends to the pressure groove. The degree of vacuum in the shaft center 2470 passes through the fluid passage 2798 to the pressure groove 2740 formed between the spring assembly 2732 and the contact housing 2765. By a controllable vacuum supply74 pages of this paper are applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ▼ Packing -------- Order ---- Economy Printed by the Ministry of Intellectual Property Bureau employee consumer cooperative 519677 Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative A7 V. Description of the invention () The vacuum provided by 2790 therefore also controls the degree of realism in the pressure slot 2740. 2, 2 Spring folding box connector 2729 combines the concept of spring and folding box. This spring deflection connector 2729 is connected between the push plate 66 and the contact housing n65. The spring box connector 2729 restricts fluid flow between the push plate 66 and the electrical contact member 67. The spring box connector 2729 will produce spring parameters when it is axially displaced (either compressed or extended) in a relaxed state. The offset of the spring-folded box connector 2729 can be used to place a push plate 66 relative to the electrical contact element of $ 67. Any suitable biasing element having a spring constant can be used as the spring box connector 2729. Alternatively, separate spring and box components can be used as the spring box connector 2729. The upper ejection surface 2728 is annular and is sealingly connected to the push plate 66. The lower half spring surface 2738 is firmly sealed to the contact housing 2765. The pressure groove 2740 is defined in the annular area between the contact housing 2765 and the spring combination 2732. In one embodiment, the spring tension generated by the spring box connector 2729 presses the push plate firmly against the back of the substrate. Evacuating in the pressure reaction chamber 274〇 will lift the spring folding box connector 2729, so the push plate 6 6 will also be lifted when the robot arm (not shown) loads or removes the substrate 22 from the electrical contact element 67 When up, the push plate 66 will be moved to the raised position. When the mechanical arm is inserted, the substrate 22 will stop on the electrical contact element 67, so that the periphery of the electroplated surface of the substrate 22 and the electrical contact element come into contact. The wiper plate 66 is then lowered and firmly rested on the upper surface of the substrate 22 to ensure a close contact between the substrate and the electrical contact element 67. The controller 222 is selected on page 75 -------------------- ^ --------- (Please read the precautions on the back before filling this page ) 519677 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention () The electrical property of the seed layer added to the substrate 22 by the controller 222. The structure of the substrate carrier combination 2450 can fix the substrate 22 in a certain position so that the substrate can be moved during the exchange, drying and process positions. The Y push plate 66 can also be shifted downward to fix the substrate 22 in electrical contact. Element 67. The upward displacement of the pushing plate 66 provides a space between the pushing plate 66 and the electrical contact element 67 to allow the robot arm device to load the substrate. In the embodiment shown in FIG. 27, the upward displacement of the pushing plate is provided by the vacuum generated by the controllable vacuum supplier 2790 in the pressure tank 2740. Pressure: The vacuum in the second 2740 causes the upper half of the spring surface 2728, the remaining spring combination 2 7 3 2, and the attached push plate 6 6 to move upward. Decreasing the vacuum from the controllable vacuum supply 2790 will return the spring-folded connector 2729 to its normal tension position, and the upper surface of the spring-stretched tab 2728 will offset the push plate 66 and fix the substrate 22 in electrical Contact element 67. The physical displacement of the substrate against the electrical contact element 67 can strengthen the electrical contact between the electrical contact element 67 and the seed layer on the substrate 22. The electrical contact element 67 extends outwards around the seed layer inserted on the substrate in the substrate carrier assembly, and affects the seed with an electrical bias relative to the anode assembly 4 7 4 shown in the embodiment of FIG. 6. A metal layer is deposited on the layers. The push plate 6 6, the electrical contact element 6 7, the spring folding box connector 2 7 2 9, and the substrate inserted on the electrical contact element are rotated relative to the fluid shield 2 7 2 0. The fluid shield 2 7 2 0 is still fixed to the shaft shield 2 7 6 3 and does not rotate. The head rotation motor 2706 is disposed around (and at least partially extends through) the inside of the hollow head rotation housing 2 7 60 and is connected to the shaft center 2 4 7 0. Page 76 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- installation -------- order ------- -(Please read the precautions on the back before filling this page) 519677 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling this page) Hollow coil part 2 7 7 5 is configured on the hollow head Rotate the inside of the housing 2760 and keep it stationary. The axis 2470 includes a magnetic portion 2777 and is rotatable along a vertical axis. The magnetic part 2 7 7 7 is completely located in the hollow part of the hollow coil part 2775. The hollow coil portion 2775 includes the rotation in the magnetic portion 2777 and the remaining shaft center 2470. The drawing bearing 2785 is located between the shaft guard 2 7 6 3 and the shaft center 2 4 7 0 to restrict the shaft center 2 4 7 0 from rotating laterally when it is rotated along the vertical axis. The output of the shaft center 2470, that is, the lower half of the shaft center, can provide the rotational movement of some parts of the substrate bearing base assembly 2450, including the push plate 66 and the load between the push plate 66 and the electrical contact element 67. The substrate 22 is as described below. The range in which the head rotation motor 2706 can generate output rotation can be under the influence of the controller 222, for example, between 0 rpm and 2500 RPM. The fluid shield 2 7 2 0 can be used selectively, and when it is used, it can be arranged around the substrate carrier device 2450, preferably at a distance from it. The fluid shield contains an electrolyte solution or other substance, which can be rotated out by the centrifugal force of the substrate carrier device 2450. 3. The beech of the substrate cutting seat Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The operation of the substrate bearing seat combination 2450 is as follows. When the robot arm inserts or removes the substrate 22 into or out of the substrate holder assembly 2450, the substrate holder assembly 2450 moves to the exchange position. The degree of vacuum in the pressure groove 2740 starts to increase (or the pressure decreases), so that the combination of the substrate bearing seat is pushed and pushed to the exchange position. The increased vacuum in the pressure groove 2740 causes the spring assembly 2732 to shift the seal piston 328 in addition to the piston rod 330. Page 77 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Ministry of Economy Printed by the Intellectual Property Bureau employee consumer cooperative 519677 A7 ______B7_ V. Description of the invention () and push plate 6 6; the offset direction is upward as shown by arrow 3 3 6. When the pushing plate position is upward so that the substrate carrying assembly 2450 is in the exchange position, the robot arm can insert the substrate 22 between the pushing plate 66 and the electrical contact element 67. The robot arm then retracts and leaves the substrate on the electrical contact element. The push plate 66 is then lowered to contact the back of the substrate and exerts a slight force. In order to accomplish this, the vacuum in the pressure tank 2 740 is reduced, that is, the offset force generated by the spring combination 2 7 3 2 is overcome by the increased pressure. The reduced vacuum will push the plate 66 down. The push plate and the substrate resting on the electrical contact and component 67 are brought into contact with each other with sufficient pressure so that the substrate and the electrical contact component 67 are in electrical contact. Due to the concentration of the area in the substrate carrier 14 applied by the vacuum and the shape of the substrate ', the degree of vacuum applied to the pressure groove 2740 will be evenly distributed around the upper surface of the upper spring surface 2728. The upper spring surface 2728 is connected to the pushing plate 66. The pressure evenly applied to the upper surface 2728 of the spring is thus uniformly converted into a downward force of the pushing plate 66 and pressed against the back surface of the substrate. The uniform hooking force applied to the substrate by the edge seal 398 creates a biasing force around the substrate. The bias voltage formed around the substrate makes a uniform electrical contact between the electrical contact element 67 and the seed layer on the substrate. When the push plate 66 is lowered so that the electrical contact element and the substrate 22 are in contact, the push plate 66, the substrate 22, the electrical contact element 6 ?, and the sealing piston 328 all rotate as a combined unit, and the rotation therein can be transmitted. To the substrate 22. The above rotation can even deposit a more uniform metal layer film on the plating surface of the substrate foot during the electroplating operation. In addition, the film is stored in the mouth. In addition, this process can also be performed on the static substrate 22, and at this time, the push plate 66, the substrate 22, and the electrical contact element are on the private paper scale. CNS) A4 -----------.— I — ^ --------- (Please read the notes on the back before filling out this page) 519677 A7 V. Description of the invention (6 must The sealing piston 3 2 8 and the spring combination 2 7 3 2 also remain stationary. The electrical contact member 67 it often has a protruding portion (not shown), which can be in contact with the seed layer to enhance the electrical properties of the seed layer. Contact. In the manufacturing position, 'the substrate support base assembly 2450 supports the substrate 22 will be known " /, the plating surface is immersed in the plating solution in the electrolyte chamber' as shown in Figure 2. When the substrate support base assembly When 245 0 is lowered to the private position, the head portion 2 4 5 0 includes a whole structure 3 2 6. The pushing plate 6 6 ′ In the embodiment in which the substrate rotates, and the electrical contact element π is approximately 〇. And angular speed between about 200 RpM, preferably about 10 to about 40 RPM. Rotation of the substrate 22 fixed between the push plate and the electrical contact element This enhances the uniformity of the metal film deposition on the entire plating surface. The substrate M (angular velocity and the degree of rotation of the rotating part of the substrate carrier combination 2450 will not cause too much disturbance in the plating solution, and excessive angular velocity will have Large disturbance. When the substrate support 14 is located at the process position, metal ions generated by the reaction between the plating solution and the anode 16 are deposited on the plating surface of the substrate 22. In addition, the combination of the substrate support and the In those embodiments in which the electroplating chamber rotates together in FIG. 1, a part of the substrate carrier assembly 2450 includes a whole structure 326, a pushing plate 66, and an electrical contact element 67 and does not rotate. After the manufacturing process is completed, the substrate carrier assembly will be removed from the plating solution to remove the entire substrate 22. In order to provide a replacement between the process position and the drying position, the upper guide rail 2466 converts the oppositely disposed slide rail 2460 upward. When The substrate 22 is removed from the plating solution, and when the substrate carrier assembly 2450 is in a dry position, the head rotating part 30. page 79 This paper is applicable in this paper National Standards (CNS) A4 size (21〇 x 297 mm) Γ Qi read the back of > it matters to fill out this page} C ----

Order --------- I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The invention description (the head rotation motor 306 in about 60 0 The substrate carrier combination is rotated at a speed between about 8000 RPM, and preferably about 2000 RPM, which is implemented in the embodiment of the substrate carrier combination rotation. The rotation of the substrate 22 can be used to rotate the substrate on the substrate. The liquid is rotated and removed and the substrate 22 is dried. In addition, the substrate 22 can also be transferred to different spin-clean-dry units, but it is not shown. It is important to note here that although several substrate supports are provided above The detailed description of the embodiment of the seat can be used for any substrate carrier capable of feeding the substrate into the process chamber 420 with the electrolyte solution. For example, the substrate carrier can rotate the substrate along the vertical axis or not rotate 4 · The test of Shen Guai uniformity Figure 28 shows that there are a plurality of curves 2806a, 2806b, 2806c, and 2806d in the graph 2800. Each curve depicts the path from the center of the substrate to the surroundings. The thickness uniformity of the metal film deposited over a radius. In this figure, the term "radius" is used on a substrate that is actually circular. The shape of the substrate can actually be rectangular, oval, etc. Radius, the term used for the substrate is a straight line extending from the center of the substrate to the edge of the substrate. The curve shown by the uniformity of the thickness of this metal thin film from the center of the seed layer to the surrounding deposition is also called the contour, appearance (Profile). The electrolyte chamber 2 2 includes a cylindrical portion having substantially the same diameter as the substrate and an overflow portion of the open end of the chamber 212. < See FIG. 6 where the height z is the vertical position of the substrate in the electrolyte chamber The height Z can be different due to different electrolyte chamber positions. Page 80 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling out this page) ▼ Load --- ----- Order -------- 519677 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. The description of the invention was obtained. However, in this figure, the height 2 can be regarded as the plating surface of the substrate. To the plating room in Figure 6 The distance from the upper half edge. In Figure 28, the horizontal coordinate 2 8 0 2 represents the distance (cm) from the substrate seed layer point to the edge of the substrate. The vertical coordinate 2 8 0 4 represents the thickness of the deposited copper metal (micron ). The thickness of the deposited metal layer film across the radius of the seed layer on the substrate is represented by a plurality of curves 2806a, 2806b, 2806c, and 2806d. Each curve 280a, 280 6b, 2806c, and 28 06d and other curves change only by height A function of z. The height z represented by curve 280 6a is 12 cm. The height z represented by curve 280 6b is 10 cm. Curve 2806c represents a height z of 6 cm. Curve 280 6d represents a height Z of 2 cm. Figure 28 shows that modifying the height Z value can affect the uniformity of the metal film deposition thickness of the seed layer on the substrate. Similar relationships between the various uniformities of the plating thickness of the entire seed layer as a function of height z are also shown under quite different plating conditions. Typical current density values in the seed layer during plating include 5 to 6 OMa / cm2. The deposition time for depositing a 1.2 micron-thick plating layer is related to specific process parameters and plating currents, but generally ranges from about 30 seconds to about 3 minutes. The level of the voltage drop from the anode to the seed layer on the seed layer is volts, and this value is related to the element impedance and the required current. Figure 28 illustrates the effect of changing the height Z on the uniformity of the plating thickness from the center to the surroundings of the entire substrate half-bearing. For the upper curve, for example, the deposition thickness of 2806c is more consistent and uniform than that of curve 2806a. The change in the height Z of the base plate 22 is shown in FIG. 25 by changing the width of the lift rail 2466 with respect to the placement slide rail 2460. The lift rail 2466 is relative to the Thai ancient $ a of the slide rail 2460, and the II linkage is page 81 -------------------- Order ------ --- (Please read the notes on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 V. Description of the invention () Controlled by the controller 222 by lifting the actuator 2458 on the head. In order to provide a more consistent deposition thickness from the center of the substrate to the edge of the substrate, the choice of height Z will provide a uniform deposition thickness with the largest radius across the substrate. There are several techniques that can affect the thickness of the seed layer deposited on a substrate. These techniques generally include physical measurement of the thickness of the deposited layer after deposition. The physical measurement of the deposited layer can use destructive and non-destructive substrate micro-measurement, chemical analysis techniques such as electrical four-point probe measurement, X-ray-based thickness measurement, and acoustic response as a function of thickness Laser / Bay J. For example, ‘by Rud〇iph Research Corporation of

One of the available laser measurement tools is the METAPULSE® tool from Flanders, New Jersey. During operation, several substrates are plated under various conditions, such as changes in height Z, different shapes of substrates, and so on. The uniformity of the deposition thickness from the center to the edge of the substrate can be measured in each substrate using the techniques described above. In the embodiment shown in Fig. 6, the Z position of the substrate carrier relative to the electrolyte chamber can be corrected. This correction assumes that the slide rail 2460 is perpendicular to the head combination bracket 2452 for the pivot joint 2459, and the pivot joint 2459 is not at an angle as shown in the embodiment in FIG. If the pivot joint 2 4 5 9 has an angle, the Z position must be corrected for each pivot joint angle. The controller 222 can input a constant value of the Z position. For example, when the pivot joint 2459 does not have an angle, it is assumed that the position correction of the position of the substrate in the electrolyte chamber in the controller 222 is "Z = 2mm". In order to move the substrate 22 to a position of Z = 6mm (that is, 4mm or more in the previous position), the lifting guide will be vertically raised by 4mm. In order to apply the Chinese National Standard (CNS) A4 specification (210 X 297 meals) on page 82 (please read the unintentional matter on the back before filling this page) --------- Order ---- ----- · 519677 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (Complete this action, the controller will start the head lifting actuator 2458 and the lifting guide 2466 will slide along the placement. The orbit 246 ° is shifted to the position of "+ Xu" as standard. The deposition rate of each point of the metal film on the seed layer on the substrate is a function of the current margin of the point. The precise current density of the entire seed layer radius The measurement provides an indication of the deposition rate that will occur over the radius of the seed layer. If the current density of the entire seed is uniform from the periphery of the substrate to the center of the substrate, since the deposition rate is a function of the current density, we It can be assumed that the deposition rate of the entire electroplated surface is also fixed. The current density added to the entire radius of the substrate will therefore vary with the height of the seed layer on the substrate in the electrolyte chamber. The Z position is one of the current density of the entire substrate. There is a certain relationship between the property (or uniformity). There are several reasons for the change in current density through the entire seed layer (from the periphery to the center of the substrate). First, the position of the electrical contact element 67 is closer to the periphery of the substrate than to the center. The material of the layer has a fixed impedance, so the electrical reach of the position close to the electrical contact element will be higher than the current density of the position farther away from the electrical contact element. This result will make the current density near the substrate more than that of the substrate. The current density at the center is high. Another reason for the change in the current density of the seed layer added to the substrate is related to the vertical distance between the anode and the special seed layer position. The current flows from the anode through the electrolyte compartment 2 ί 2 The plating solution reaches the seed layer on the substrate. The plating solution contained in the electrolyte chamber 212 also has a fixed impedance. The current flowing from the anode to the cathode will find the most direct path among them to reduce the impedance. In most examples As shown in the example in Figure 2 on page 83, this paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the back of the precautions to fill out this page) ▼ loading Order -------- ---------. A7

519677 V. The description of the invention () shows that the shortest path between the anode and the seed layer is the vertical distance between each other. For example, most of the current from the anode to the seed layer will generally flow up the vertical anode surface 16 up to the nearest seed layer position and make vertical contact with the bottom of the seed layer. In most cases, the anode does not have a horizontal diameter comparable to the seed layer on the substrate. For example, if the anode 16 is larger than the substrate 22, the current density from the center of the substrate to the surrounding seed layer will be different. . And because the shape of the seed layer is different from the shape of the anode, some parts of the seed layer on the substrate will be exposed to the current from the south of the anode. In addition, if the substrate carrier 14 places the substrate 22 near or far away from the anode 16, the impedance value of the entire electrical gap solution between the anode 16 and the seed layer will change. When the height z of the substrate in the electrolyte chamber increases, the impedance value between the anode 16 and the seed layer also increases. When the resistance value of the electrical gap solution increases, the entire current from the anode to the seed layer also decreases, resulting in a change in the thickness of the subsequent substrate deposition. Irregularities in the impedance of the electrolyte solution will also affect the current density at different locations throughout the substrate. The high Z will affect the consistency of the impedance value of the electrolyte solution. Each of the above reasons explained that the change in the current density of the entire substrate caused a change in the deposition rate of the metal thin film and an inconsistency in the deposition rate of the metal thin film, and this current density was added to the seed radii of the seed layer on the substrate. There are so many complex factors in the current density of the seed layer, so it is difficult to accurately predict the current density of the entire species from the substrate to the center. Similarly, the deposition rate of metal thin films involves many complex factors, so it is often difficult to predict the deposition rate. It is usually more useful and useful. Page 84 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) --------------------- Order- -------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 519677 A7 Printed by the Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Precise measurement of I current, degree, or depositional density of the entire seed layer. In the embodiment of the electroplating chamber shown in Figure 1, the accurate measurement of the current density of the entire substrate radius is simpler. 'At this time, the substrate is not like the first The electroplating process chamber 400 shown in Fig. 6 is rotated during operation. In the embodiment where the substrate is rotated during the process, the "current density sensor must be rotated with the substrate". The electrolyte chamber is provided above. Description of the controllable deposition thickness and rate uniformity when the radius of the entire substrate is a function of the substrate height Z. I can imagine that the uniform deposition rate of the entire substrate radius can be controlled by changing the substrate's different positions in the electrolysis chamber. For example, in Electrolyte compartment Moving the substrate to the right can strengthen the uniformity of the current density over the entire substrate radius. The electrolyte chamber can be configured with different horizontal cross-sectional shapes to enhance the uniformity of the deposition rate. I can imagine a rotatable head combination 2 4 丨 〇 Multiple substrates are placed at different locations in the electrolyte chamber ^ The uniformity of the deposition rate across the entire substrate radius can be determined by the substrates exposed at different test locations, different substrate heights, or lateral positions in the electrolyte chamber. Multiple of the entire test substrate radius The actual curves of the deposition rate uniformity obtained at different locations can be stored in the controller 222 as different parameters. These parameters can include (but are not limited to) process time, current / voltage between the anode and the seed layer on the substrate, Chemical composition of electrolyte solution ... etc. During electroplating, the rotatable head assembly places the substrate at the desired position to provide the most suitable deposition characteristics for the seed layer on the entire substrate. For example, we may need Center thickness is greater than surrounding thickness, edge thickness is greater than surrounding thickness, or entire The sublayer has a uniform thickness from the center to the surroundings. In order to provide the required deposition method, the substrate is positioned at the 85th ear in the electrolyte chamber. -Order --------- ί Please read the phonetic on the back? Matters before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, M 9677 V. Description of the invention () Will cause the deposition of metal on the substrate The thin film produces the closest thickness shape, and the substrate will go through the same process. Another example of placing the substrate in the electrolyte chamber to change the thickness uniformity of the deposition along the radius of the seed layer includes changing the substrate: : <Vertical cross-sectional shape. For example, the substrate 22 may have a fox shape in a certain direction, so the center of the substrate and the periphery of the substrate are not in the same plane, that is, the substrate is curved. The curved substrate can be provided by the operation of the rotatable &lt; head assembly 2410 in the embodiment of FIG. 27. Other devices that can be placed against or deformed and have different parts of the substrate at a distance from the anode are also within the scope of the present invention. It is assumed that the push plate 66 contacts its upper half surface, or includes, for example, a baffle plate. The biasing device is in contact with its upper surface. At the same time, it is also assumed that the radius of the position where the pushing plate contacts the substrate is smaller than the radius around the bottom surface where the electrical contact member 67 contacts the substrate. . = Represents two downward forces applied by the pushing plate 66 to the upper half of the surface of the substrate. Under normal operating conditions, the magnitude of the force Π is equal to the magnitude of the force F2, because there are only these vertical forces on the substrate and the substrate does not have a vertical displacement. Since F1 is added to the outside of the substrate 22 and has a distance from F2, the substrate will appear curved under its balance. Assuming that the rotatable head assembly 2410 carries the substrate in a certain orientation, regardless of its degree of bending, the center 2 9 2 of the substrate 2 is lower than the periphery 2904 of the substrate. In the example of the electroplating process chamber 400t shown in FIG. 6, if the anode is lower than the substrate, the distance between the center 2902 and the anode is closer than the surrounding 2904. As a result, since the paper size from the anode to the center applies the Chinese National Standard (CNS) A4 specification (210 x 297 ^ Pack -------- Order --------- (Please read the back first Fortunately, please fill in this page again. 519677 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7_ 5. Description of the invention () The electrolyte solution of 2 9 0 2 has a smaller impedance than the surrounding 2 9 0 4 The deposition rate at the center should exceed the surrounding deposition rate. Using this bending can increase the deposition rate at the center of the substrate compared to the deposition rate around the substrate. In the case where the metal film is deposited on the seed layer near the periphery with a higher rate than the center, this This bending method can make the seed layer on the entire substrate have a relatively uniform deposition thickness. The above description is only a preferred embodiment of the present invention, and other embodiments can be produced without departing from the basic scope of the present invention. The scope is defined by the following patent application scope. Page 87 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------ ^^ 装- ------- Order --------- (Please read the back first Notes on filling out this page)

Claims (1)

A8 B8 C8 519677 VI. Application Patent Scope 1. A device for electrochemically depositing a metal layer film on a substrate having a metal seed layer, the device at least includes: a substrate bearing seat for carrying the substrate; an electrolyte chamber receiving at a process position The substrate; and an actuator connected to the substrate carrier so as to place the substrate with respect to the electrolyte main frame, thereby providing the required uniformity of the metal film deposition thickness. 2. The device as described in the first item of the scope of the patent of Shenyang, which further comprises metal deposition to provide deposition of the metal thin film on the seed layer on the substrate. 3. The device according to item 1 of the scope of patent application, wherein the above-mentioned adjustment placement includes moving the substrate carrier to a truly vertical direction. 4. The device according to item 1 of the scope of patent application, which further includes a sensor for detecting the current density of the entire seed layer. 5. The device according to item 1 of the scope of patent application, wherein the above-mentioned electrolyte chamber further includes a body portion and an overflow portion, and the overflow portion defines an opening for receiving the substrate at a process position thereof, and the substrate The supporting base adjusts and positions the substrate relative to the body part. 6. The device described in item 4 of the scope of patent application, in which the above adjustments are placed on page 88. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) --------- -• Equipment -------- Order --------- Φ (Please read the notes on the back before filling in this page) The Intellectual Property Bureau of the Ministry of Economic Affairs printed the Intellectual Property of the Ministry of Economic Affairs Consumer Cooperatives Printed by the Bureau's Consumer Cooperatives 519677 A8 B8 C8 D8 6. Application for Patent Scope 1 2. The method described in item 7 of the Patent Application Scope, wherein the above-mentioned adjustment position includes adjusting the horizontal position of the substrate in the electrolyte chamber. 13. —A method for electrochemically depositing a metal layer film on a substrate having a metal seed layer, the method at least comprising: placing the substrate in an electrolyte chamber constructed to receive the substrate; adjusting the placement relative to the electrolyte chamber Put the substrate. 14. The method as described in item 13 of the scope of patent application, further comprising a radius from the center of the substrate to the periphery of the substrate to determine the uniformity of the thickness of the metal layer film deposited on the substrate. 15. The method according to item 14 of the scope of patent application, wherein the aforementioned determination of the thickness uniformity of the metal layer film includes measuring the thickness of the metal layer film. 16. The method according to item 13 of the scope of patent application, wherein the above-mentioned electrolyte chamber has a body portion and an overflow portion, and the overflow portion defines an opening for receiving the substrate in the process position, and the substrate The adjusted placement is performed relative to the body portion of the electrolyte chamber. 17. The method described in item 13 of the scope of patent application, wherein the above-mentioned adjustment placement includes adjusting the vertical height of the substrate. Page 90 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling out this page) nnnd "•• cnnnnn _b 519677 A8 B8 C8 D8 Six Economy Intellectual Property Cooperative of the Ministry of Intellectual Property Bureau printed a patent application scope 2 3 · The method described in item 19 of the patent application scope, wherein the above-mentioned adjustment placement includes adjusting the degree of f-curve of the substrate. The method described in item 19, which further includes the thickness of the metal layer film in another amount to determine the uniformity of the deposited layer. 25.-A device for electrochemically depositing a film on a substrate having a metal seed layer, the device It includes at least: a substrate carrier for carrying the substrate; an electrolyte chamber for receiving the substrate at a process position, and its decomposing chamber further includes a body part and an overflow part, the overflow is defined at its process position Receiving the opening of the substrate, and the base can be adjusted to place the substrate relative to the body portion; an actuator is connected to the substrate carrier to move the substrate to a true position A vertical direction so as to be relative to the position of the electrolyte chamber plate, thereby providing the required thickness of the metal layer film; and a metal layer deposition portion for providing the seed and the metal layer film deposition on the substrate. Reading electricity> Tiger part ^ The board-loaded seat is on the same level as the basic level ------------ • Installation -------- tT --------- »F Qi first read the tl back v &gt; i and then fill in this page) page 92 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)