TW513378B - Micro droplet generator having off-shooter, symmetrical heating fins and method for manufacturing the same - Google Patents

Micro droplet generator having off-shooter, symmetrical heating fins and method for manufacturing the same Download PDF

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TW513378B
TW513378B TW91101434A TW91101434A TW513378B TW 513378 B TW513378 B TW 513378B TW 91101434 A TW91101434 A TW 91101434A TW 91101434 A TW91101434 A TW 91101434A TW 513378 B TW513378 B TW 513378B
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Taiwan
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spray
scope
patent application
layer
heating plate
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TW91101434A
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Chinese (zh)
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Chen-Kuei Chung
Chun-Jun Lin
Chung-Chu Chen
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Ind Tech Res Inst
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Abstract

This invention provides a micro droplet generator having off-shooter, symmetrical heating fins and method for manufacturing the same. This method implements two thick photoresist forming steps and one nickel electro-plating step. The first thick photoresist forming step forms a spraying chamber between a funnel-shaped liquid manifold and a spray orifice for liquid flow. The second thick photoresist forming step makes a mold for making a injector passagewat in communication with the spray orifice. The nickel electro-plating step forms an orifice plate at a top of the spraying nozzle. The orifice plate is penetrated by the spray orifice communicating with the spray flowing channel in the spray nozzle so as to allow liquid droplets being sprayed therefrom.

Description

513378 五、發明說明(1) 【發明之應用範圍】 本發明係關於一種微型喷液產生器,特別關於一 有偏射型對稱式加熱片之熱氣泡式微型喷液: 造方法。 王為反具衣 【發明背景】 自攸印表機的製造技術成热後,印表 姿態廣泛地使用於個人電腦上。林林總總的;; 僅於工業上快速地發展與應用,甚至連一二二 ^ 電的配備也幾乎都有印表機的存在。 =廷中貪訊家 機的列印結構可略分為以下幾_ :1 ,喷墨印表 3.熱氣泡式等三類。而早在8〇年代即二丄2.靜電式; 氣泡式喷墨印表機推出。這不但是象 j業化的熱 技術的成熟與進步,同時也意謂著人資ζ二表機之製造 了一大步。 、貝σί1科技又向前跨 在噴墨印表機的結構中,微型噴液產生哭 田(1Cr〇-Dr〇Plet Generat〇r )俗稱噴墨頭, 取基本的機械裝置。而使用者對於噴黑、直疋/、中 則在高噴出頻率與高空間解析度的要^ P表機評量重點, 有良好的喷墨性能表現。 ’下’噴墨頭是否能 目前市面上喷墨印表機的主产八 式兩類型。熱氣泡式喷墨印表=田j f壓電式與熱氣泡 氣泡產生器;換句話說,埶氣、、包、+用熱能的手段來驅動 於其中之氣泡產生器生成—氣泡二32表機係利用設置 嘴。另一種類型即為壓電式噴墨寻=滴由喷墨室推出喷 、土 P表機’則是採用壓電致513378 V. Description of the invention (1) [Application range of the invention] The present invention relates to a micro-spray generator, in particular to a thermal bubble-type micro-spray with a polarized symmetrical heating plate: a manufacturing method. Wang Weijiao [Background of the Invention] Since the manufacturing technology of printers has become popular, the printing posture has been widely used on personal computers. There are all kinds of printers; only in the rapid development and application in industry, even the deployment of even one, two, two, almost all printers. = The printing structure of the greedy family machine in the court can be divided into the following _: 1, inkjet printing 3. Thermal bubble type. As early as in the 1980s, it was 2. electrostatic type; bubble type inkjet printer was launched. This is not only like the maturity and progress of industrial thermal technology, but also means that the manufacturing of human-powered two-meter machines has taken a big step. In the structure of the inkjet printer, the micro-spraying liquid produces 1CrO-DrOPlet Generator, which is commonly called the inkjet head, and takes the basic mechanical device. The users have important points for black, straight and / or medium jets with high jetting frequency and high spatial resolution, and have good inkjet performance. Is it possible that the 'lower' inkjet heads are currently produced on the market as inkjet printers that are mainly produced in two types. Thermal bubble inkjet printer = Tian jf piezoelectric and thermal bubble bubble generator; in other words, tritium, bag, + bubble generator is driven by thermal energy means-bubble two 32 meter Use the set mouth. Another type is the piezoelectric inkjet seeker, which is ejected from the inkjet chamber.

第4頁 513378 五、發明說明(2) 動裔,將墨水擠出形成墨滴。至於熱氣泡式喷墨印表機的 工作原理為將一電流導通至一電極上,藉以加熱噴墨室之 水。當墨水處於局部沸騰狀態時,便會從墨水中形成一 膨,,氣泡。這個氣泡有點類似壓縮泵的作用,將噴墨室 ::!的墨水由喷嘴推出,而形成一墨滴。當切斷電流供 ;二’氣泡立即裂解墨水也因回縮液面表面張力的影 曰下ρ回填至喷墨室中作下一次喷墨動作。 噴出IS Ϊ熱氣泡式噴墨印表機之噴墨性㉟,大致上有墨滴 星專滴',、相鄰贺墨室的相互干擾(Cr〇ss Talk)以及衛 (Satemte Dr〇plets)的形成等因素, =:列:中有衛星墨滴的形成,則影 利,相鄰噴墨室與流道中 」丨幻π咐銳 度。為了提昇熱氣泡式喷墨印表 要目標。貝' l、、點勢必成為研發時所要克服的首 【發明之目的與概述】 蓉於以上習知技術的問題, 種具有#射型對稱式加熱片之 ^產=的在於揭露- 法,其概述如下: 铽孓贺液產生器之製造方 本發明之製造方法係包含 面與下表面之石夕基材;於石夕基材供-具有上表 形成-厚度至少為1 0 0 0埃之第—絕緣=亡下表面處分別 質可由二氧化石夕(Si〇2)與氮化石夕(彖s二(材 ),以反應性離子蝕刻法去除 3 ^中任砥/、一 丞材下表面之第二絕緣Page 4 513378 V. Description of the invention (2) The ink is squeezed out to form ink droplets. As for the thermal bubble inkjet printer, the principle is to conduct a current to an electrode to heat the water in the inkjet chamber. When the ink is in a localized boiling state, a swell, bubble is formed from the ink. This bubble acts a bit like a compression pump, pushing the ink from the inkjet chamber ::! Through a nozzle to form a drop of ink. When the current supply is cut off, the two 'bubbles immediately rupture the ink and backfill the ink into the inkjet chamber for the next inkjet action due to the influence of the surface tension of the retracted liquid surface. The inkjet properties of the IS (thermal bubble inkjet printer) that ejects ink are roughly ink drops and stars, and the mutual interference (CrOss Talk) and Satemte Drooplets of adjacent ink chambers. Factors such as the formation of == column: there are satellite ink droplets in the formation, then the shadow is sharp, and the adjacent inkjet chamber and flow channel are sharp. In order to improve the thermal bubble inkjet prints, aim. The point is bound to be the first to be overcome in the research and development. [Objective and summary of the invention] The problem of the above-mentioned conventional technology is a kind of symmetric production of a #radiating symmetrical heating plate. It is summarized as follows: The manufacturer of the Suga liquid generator The manufacturing method of the present invention includes a surface material and a bottom surface of the Shi Xi substrate; the Shi Xi substrate is provided-with the above table formation-the thickness is at least 1 0 0 0 Angstroms The first-Insulation = The surface of the bottom can be removed by SiO 2 and Nitride (彖 二 (材 去除 材 材 材 材 ((((((((((((二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二, 去除 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二Surface second insulation

513378 五、發明說明(3) 層,而形成-開口;使用含有氫氧化卸(κ 四甲按((CH3)4画)的溶液,以濕式姓刻法於^口^ 基材中,形成一漏斗狀之液體進口(Manifold).於上 面之第-絕緣層形成-環形對稱式加熱片(材質可由純 鈕(TaAl )、綳化給(Η〇2 )、硼化錯(z 、、 ㈤)及# (Pt)中任選其一);沈積與圖案轉移-電 導線’亚與加熱片連接,而形成電性導通;於加熱片與第 一絕緣層之頂端沈積一第三絕緣層(材質可由氮化矽 (SlsN4 )與碳化石夕(SiC )中任選其一);於 之上旋塗一厚度至少為(料丰夕μ τ 、弟一、、、巴、、、彖層 亦夕:二:ί 弟一光阻層;以紫外線曝 光之方式於此弟一光阻層中圖案轉移一噴液室;於 阻層沈積一金屬種子層(材質可以是鉻(Cr )或鎳(Μ ) ),並且於此金屬種子層中圖案轉移一喷孔 ;於此金屬種子層旋塗一厚度至少為嶋之第 一士阻層,並且圖案轉移至喷孔;移去除此喷孔頂端以外 ,弟二光阻層;於金屬種子層之頂端電鍍一鎳層,並將此 J孔I頁端之第二光阻層封入鎳層中;以濕式蝕刻法除去喷 ;於石夕基材之下表面4,以反應性離子餘 "1去弟一絶緣層,使得液體進口與第一絕緣層能以鉦 遮敝的形式存在;最後再以濕式蝕刻法除去喷液室之第二 光阻層,即可完成本發明之微型噴液產生器。 矽基材 具有一上表面與一下表面;一第一與第 1本發明的另一個目的在於提供一種具有偏射型對稱 :L片之微型喷液產生器,此裝置主要分成以下幾個部513378 V. Description of the invention (3) layer to form-openings; using a solution containing hydrogen peroxide (κ 甲 甲 甲 Press ((CH3) 4 draw)), wet-engraved on the ^ mouth ^ substrate to form A funnel-shaped liquid inlet (Manifold). The top-insulating layer is formed on the top-a ring-shaped symmetrical heating plate (the material can be made of pure button (TaAl), halogenated to (Η〇2), boronized fault (z ,, ㈤ ) And # (Pt) any one of them); deposition and pattern transfer-the electrical wire is connected to the heating sheet to form electrical conduction; a third insulating layer is deposited on the top of the heating sheet and the first insulating layer ( The material can be one of silicon nitride (SlsN4) and carbonized carbide (SiC); spin-coated on it with a thickness of at least (material Fengxi μ τ, si, y, ba, y, y) Evening: 2: Brother 1 photoresist layer; pattern transfer to a liquid spray chamber in this brother 1 photoresist layer by UV exposure; depositing a metal seed layer (material can be chromium (Cr) or nickel ( Μ)), and a pattern hole is transferred in the metal seed layer; a first layer having a thickness of at least 嶋 is spin-coated on the metal seed layer And the pattern is transferred to the spray hole; the second photoresist layer is removed except the top of the spray hole; a nickel layer is plated on the top of the metal seed layer, and the second photoresist layer on the I-end of the J hole is sealed in In the nickel layer, the spray is removed by wet etching; on the lower surface of the Shixi substrate 4, a reactive ion residue " 1 is used to remove an insulating layer, so that the liquid inlet and the first insulating layer can be shielded by 钲. The form exists; finally, the second photoresist layer in the liquid spraying chamber is removed by wet etching to complete the micro liquid jet generator of the present invention. The silicon substrate has an upper surface and a lower surface; a first and a first Another object of the present invention is to provide a micro-spray generator with a polarization-symmetric: L-piece. This device is mainly divided into the following parts

第6頁 MJ378 五、發明說明(4) 絕緣層,係分別形成於矽基材之上表面與下表面處,而第 一與第二絕緣層之厚度至少為1〇〇〇埃(Angstr〇ms,A), 通 端 材質可由二氧化石夕(Si〇2 )與氮化石夕⑻3心)中任選其 ,漏斗狀之液體進口,係形成於矽基材與第二絕緣層 之中;一環形對稱式加熱片,係形成於上表面之第一絕緣 層的上方,材質可由鋁化鈕(TaM)、綳化铪(HfB2)、 硼化鍅(ZrB2 )、氮化鈕(TaN )及鉑(pt )中任選其 一電V線,係與加熱片係相互連接,而形成電性導 一第二絕緣層,係形成於第一絕緣層與加熱片之頂 一第一光阻層,係形成於第三絕緣層之頂端,第一光 阻層之厚度至少為1微米;一噴液室,係形成於第一光阻 層中,使得嘖液室與液體進口形成連通,以供液體流動; 一金屬種子層,係設置於第一光阻層之上方,材質可以是 鉻(Cr )或鎳(N i ); —喷孔,係形成於金屬種子層中, 以及一鎳層’係設置於金屬種子層之頂端,此鎳層具有一 穿孔’此穿孔與喷孔形成連通,以供液體流動。 因此,本發明的目標主要是運用二次厚光阻,再加上 電鍍鎳技術,藉以製造出微型喷液產生器(包含加熱片、 喷孑L 流道(Injector Passageway)與喷孔片(Qrifice Plate )等)。這不但能使得喷液產生器之尺寸得以精確 控制,還可改善傳統熱氣泡式喷墨印表機列印品質不佳與 結構屢弱的缺陷。 有關本發明的特徵與實作,茲配合圖式作最佳實施例 詳細說明如下。Page 6 MJ378 5. Description of the invention (4) The insulating layer is formed on the upper and lower surfaces of the silicon substrate, respectively, and the thickness of the first and second insulating layers is at least 1000 Angstroms (Angstroms) A), the material of the through-end can be selected from SiO2 and SiO2, and the funnel-shaped liquid inlet is formed between the silicon substrate and the second insulating layer; a ring The symmetrical heating plate is formed above the first insulating layer on the upper surface. The material can be made of aluminum button (TaM), hafnium (HfB2), hafnium boride (ZrB2), nitride button (TaN), and platinum. (Pt) any one of the electric V wires is connected with the heating sheet to form a conductive second insulating layer formed on the top of the first insulating layer and the heating sheet, a first photoresist layer, It is formed on the top of the third insulating layer, and the thickness of the first photoresist layer is at least 1 micron; a liquid spraying chamber is formed in the first photoresist layer, so that the liquid chamber is in communication with the liquid inlet for the liquid Flowing; a metal seed layer is arranged above the first photoresist layer, and the material can be chromium (Cr) or nickel (N i );-A spray hole is formed in the metal seed layer, and a nickel layer is provided on the top of the metal seed layer, the nickel layer has a perforation, and the perforation is in communication with the spray hole for liquid flow. Therefore, the objective of the present invention is to use a secondary thick photoresist, coupled with electroplated nickel technology, to manufacture a micro-spray generator (including a heating plate, an injector passageway, and a Qrifice). Plate), etc.). This can not only enable the size of the liquid jet generator to be accurately controlled, but also improve the defects of poor print quality and weak structure of traditional thermal bubble inkjet printers. Regarding the features and implementation of the present invention, the preferred embodiments are described in detail with reference to the drawings.

513378 五、發明說明(5) 【發明之詳細說明】 本發明係揭露一種具有偏射型對稱 液產生态及其製造方法。此製造方法係 (以旋塗法形成之)再加上電鍍鎳技術 型喷液產生器。首先,運用第一厚光阻 液至,其次,運用第二厚光阻旋塗法設 形成一育孔。最後,運用電鍍技術於噴 層,並在第二光阻層去除後,於此鎳層 使液滴由贺孔處射出。本發明之微型噴 式係採用微系統製程技術,以一體成型 本發明所製作之微型噴液產生器, 單晶碎基材,並於此矽基材上形成一環 環形加熱片為對稱結構,所以可以產生 液滴。另外,由於環形加熱片之電極具 性,遂可解決衛星墨滴的問題、抑制相 之相互干擾的現象以及降低流道中孔蝕 發生。 本發明之加熱片於矽基材上位置的 射型(Off Shooter)與背射型(Back 如『第1 A、1 B圖』所示。偏射型亦即將 於喷嘴5 6 a於法線方向進行偏置的安排, 結構為一實施例,而予以說明之。至於 法與步驟與偏射型僅有些微的差異,故 關於微型喷液產生器的製作流程, <力口熱 運用二 ,而可 旋塗法 計一模 液頭頂 形成所 液產生 的方式 其主要 形加熱^ 數量多 備有高 鄰噴液 (Caν i 片之微製嘴 次厚光随' 製作完成微 以製作一嘴 具層,用以 端製作〜轉 需噴孔,可 器的製造方 製作而成。 結構係採用 片。因為此 且品質佳之 方向垂直 至與流道間 tat i on )的513378 V. Description of the invention (5) [Detailed description of the invention] The present invention discloses a generation state of a symmetric liquid having a polarization type and a manufacturing method thereof. This manufacturing method (formed by spin-coating method) is combined with a nickel-plated nickel-based spray generator. First, a first thick photoresist solution is used, and second, a second thick photoresist spin coating method is used to form a hole. Finally, electroplating is applied to the spray layer, and after the second photoresist layer is removed, droplets are ejected from the holes in the nickel layer. The micro-spray type of the present invention adopts a micro-system process technology to integrally mold the micro-spray generator produced by the present invention, a single crystal broken substrate, and a ring-shaped heating plate formed on the silicon substrate as a symmetrical structure, so that Generate droplets. In addition, due to the electrode characteristics of the ring-shaped heating plate, the problem of satellite ink droplets can be solved, the mutual interference of the phases can be suppressed, and the occurrence of pitting corrosion in the flow channel can be reduced. The off-shooter and the back-shot (Back of the heating sheet of the present invention on the silicon substrate are shown in the "Figures 1A and 1B". The polarizing type is also about to be normal at the nozzle 5 6a The arrangement of the direction is offset, and the structure is an example, and it will be explained. As for the method and steps and the polarized type are only slightly different, so regarding the manufacturing process of the micro-jet generator, < Likou Thermal Application 2 The spin-coating method can be used to measure the formation of the liquid on the top of a mold head. The main shape is heating ^ A large number of high-adjacent spray liquid (Caν i film, micro-thickness of the mouth, second thick light with 'production is completed to make a mouth The layer is used to make the end-to-requirement spray holes, which can be made by the manufacturer of the container. The structure is made of sheet. Because of this, the good quality is perpendicular to the tat i on the flow channel)

安排主要可分為偏 Shooter )兩類, 加熱片2 8位置相對 3以下將以偏射型 背射型因其製作方 不再重複贅述。 首先請參閱『第2AThe arrangement can be mainly divided into two types: polarized Shooter. The positions of the heating plates 2 and 8 below 3 will be polarized and back-fired because the producers will not repeat them. First see "Section 2A

第8頁 513378 五、發明說明(6) --- 圖』的部分。本發明係運用低壓化學氣相沈積法(L〇wPage 8 513378 V. Description of the invention (6) --- Part of the drawing. The present invention uses a low pressure chemical vapor deposition method (L0w

Pressure Chemical Vapor Deposition ’LPCVD)於石夕其 材1 0之上表面1 2與下表面丨4處分別形成第一絕緣層丨6以&及 第二絕緣層1 8。第一絕緣層丨6與第二絕緣層丨8係可由二氧 化石夕(Si〇2)與氮化矽(ski)中任選其一來予以製作, 而其厚度可為1 0 0 0埃〜2〇〇〇埃(建議最佳值為2〇〇〇埃)之 間。石夕基材1 〇係採用外形直徑為1 〇 1 m m以及結晶面為 (1 0 0 )之P型矽晶圓。在進行第一絕緣層丨6與第二絕緣層 18處理步驟之前,可以化學式濕洗法(RCA cieaning ) ^ 潔此石夕晶圓之表面。然後再將其放進爐管中,以濕式氧^ 法(Wet Oxidation Method)形成厚度大於1微米之二惫 化矽層。 乳 接著便運用光微影(Photolithography)製程,於石夕 基材10之其中一面處製作液體進口 20,請參閱『第2B圖』 的部分。使用第一光罩(ph〇t〇 Mask)來對液體進口 2〇於 矽基材1 0中的相關位置予以定義。至於形成此液體進口 2 〇 的第一步驟即是採用反應性離子蝕刻法(Reactive Etching,RIE)之乾式蝕刻(Dry Etching)的方式將第 二絕緣層1 8和濕氧化層除去一部份。然後採用氫氧化鉀 (K0H)或是氫氧四甲基氨((CH3)4N〇H,Tetra Methyi Ammonium Hydroxide,TMAH)的溶液,以濕式蝕刻(Wet Etching )的方式,對於矽基材丨〇進行蝕刻。待蝕刻結束 後,便以去離子水(Deionized Water )來漂洗此矽晶 圓。Pressure Chemical Vapor Deposition 'LPCVD) forms a first insulating layer 6 and a second insulating layer 18 on the upper surface 12 and the lower surface 1 of Shi Xi material 10, respectively. The first insulating layer 丨 6 and the second insulating layer 丨 8 can be made of one of SiO2 and silicon nitride, and the thickness can be 100 Angstroms. ~ 2000 Angstroms (recommended optimal value is 2000 Angstroms). The Shi Xi substrate 10 is a P-type silicon wafer with an external diameter of 101 mm and a crystal plane of (100). Before performing the first insulating layer 6 and the second insulating layer 18 processing steps, chemical wet cleaning (RCA cieaning) can be performed to clean the surface of the Shixi wafer. Then put it into the furnace tube, and use the wet oxygen method (Wet Oxidation Method) to form two layers of depleted silicon with a thickness greater than 1 micron. The milk then uses the photolithography process to make a liquid inlet 20 on one side of the Shixi substrate 10, please refer to the section "Figure 2B". A first mask is used to define the relative position of the liquid inlet 20 in the silicon substrate 10. As for the first step of forming the liquid inlet 20, the second insulating layer 18 and the wet oxide layer are partially removed by dry etching (Reactive Etching, RIE). Then, a solution of potassium hydroxide (K0H) or tetramethylammonium hydroxide ((CH3) 4NOH, Tetra Methyi Ammonium Hydroxide, TMAH) is used to wet-etch (Wet Etching) the silicon substrate. 〇Etching. After the etching is finished, the silicon wafer is rinsed with deionized water.

第9頁 五、發明說明(7) 『—接下來,再次以光微影製程來製作電導線34,請參閱 、曾:2C圖』的部分。使用第二光罩於此矽晶圓上定義出電 =線34的位置。此電導線34可選用益呂(Ai )或銅(cu)等 ¥電性良好的材質’將其蒸鍍於第一絕緣層16的頂端,並 且圖案轉移(Patterning )至電導線34。然後再一次地以 去離子水來漂洗此吩晶圓。 加熱片28之電極的製作流程,請參閱『第2D、2E圖』 的部分。將矽基材1〇之電導線34頂端沈積一鋁化鈕(TaAl )合金之金屬層(或其他加熱片材料如綳化铪(Μ% )、 硼化鍅(ZrB2 )、氮化鈕(TaN )或鉑(pt )等),並使 用第三光罩進行圖案轉移至此金屬層,藉以作為一環形對 稱式加熱片28之電極。接著於矽基材1〇頂端沈積上一層絕 緣層或是保護層36,用以提供加熱片28之電極以及電導線 34等其他結構良好的隔離效果。此保護層%係可由氮化矽 (S is & )、二氧化矽(s i 〇2 )以及碳化矽(s 土 c )中任選 其一或二種組合,而以電漿增強式化學氣相沈積法 (Plasma Enhanced Chemical Vapor Deposition ^ PECVD )來製作而成。 以旋塗與烘烤的方式於保護層3 6的頂端形成一第一光 阻層38a,如『第2F圖』所示。第一光阻層38a之厚度至少 為1微米’但是建議最佳值為25微米〜30微米。接著再使 用紫外線光(Ultra-Violet Radiation)對第一光阻声 38a進行曝光製程,請參閱『第2G圖』的部分。使用第^四 光罩於第一光阻層38a中來定義出喷液室4〇的大小與位 513378 五、發明說明(8) 置。至於第一光阻層38a可依據設計的需求,而採用正光 阻(Positive Photoresist )或負光阻(NegativePage 9 V. Explanation of the invention (7) "—Next, the electric lead 34 is made again by the photolithography process, please refer to the part of" Zeng: 2C "". A second photomask is used to define the position of the electrical line 34 on this silicon wafer. The electrical lead 34 may be made of a material with good electrical properties, such as Ai or copper, which is vapor-deposited on the top of the first insulating layer 16, and the pattern is transferred to the electrical lead 34. The pheno wafer was then rinsed again with deionized water. For the manufacturing process of the electrodes of the heating plate 28, please refer to the section of "Figures 2D and 2E". A metal layer of an aluminized button (TaAl) alloy (or other heating sheet materials such as hafnium (M%), hafnium boride (ZrB2), and nitride button (TaN) is deposited on the top of the electrical lead 34 of the silicon substrate 10. ) Or platinum (pt), etc.), and the pattern is transferred to this metal layer using a third photomask, so as to serve as an electrode of a circular symmetrical heating plate 28. Then, an insulating layer or a protective layer 36 is deposited on the top of the silicon substrate 10, so as to provide good structural isolation effects such as the electrodes of the heating plate 28 and the electric wires 34. This protective layer can be selected from one or two of silicon nitride (S is &), silicon dioxide (si 〇2), and silicon carbide (s soil c). Phase deposition method (Plasma Enhanced Chemical Vapor Deposition ^ PECVD). A first photoresist layer 38a is formed on the top of the protective layer 36 by spin coating and baking, as shown in FIG. 2F. The thickness of the first photoresist layer 38a is at least 1 micron ', but it is recommended that the optimal value be 25 micrometers to 30 micrometers. Then use Ultra-Violet Radiation to perform the exposure process for the first photoresist sound 38a, please refer to the section "Figure 2G". The fourth photomask is used in the first photoresist layer 38a to define the size and position of the liquid ejection chamber 40. 513378 Fifth, the description of the invention (8). As for the first photoresist layer 38a, a positive photoresist (Negative Photoresist) or a negative photoresist (Negative)

Photoresist)。經過曝光後,在矽基材1〇之頂端便存留 有部分的已曝光與未曝光之第一光阻層38a、38b。往後必 須於此處製作一精準定位與尺寸之噴液室4〇,所以 + 係為本發明關鍵點之一。 V ~ 接著請參閱『第2H圖』的部分。於已曝光與未曝光之 第一光阻層38a、3 8b之頂端沈積一金屬種子層46,^在此 金屬種子層46中圖案轉移出一喷孔48。金屬種子層46可以 濺鍍或蒸鍍的方式,沈積出一鉻(Cr )或鎳(Ni )θ合金之 金屬層。再來便以第五光罩進行光微影製程,藉此定 喷孔48的大小與位置。最後便採用濕式蝕刻的方式移除經 光微影後之金屬種子層4 6,而形成一喷孔“。 繼續運用旋塗法沈積出第二光阻層50a,並於盆 案轉移一喷孔流道52,而形成第二光阻層5〇b,如:\ 。所示。上述沈積製程完成後,接下來便開始移去除了 二::4!頂η卜之該第二光阻層5〇a ’使得噴孔流道52 二能繼續存留於喷孔48之頂端處,如 弟圖』所不。 然後繼續以電鍍鎳技術來製作一喷孔片54,如 圖』所示。利用濕式蝕刻法來將噴孔片54中之 5〇b移除,藉以形成與喷液 弟一光P層 為『第2L圖』。 胃液至4◦連通之贺孔流道52,此即 接下來則使用反應性離子餘刻法對石夕基材的背面進 513378 五、發明說明(9) 行蝕刻,移除矽基材1 0之第二絕緣層1 8,使得液體進口 2 〇 與第一絕緣層1 6能以無遮蔽的形式存在,如『第2 %圖』所 7F ° 本發明之最後一道製程,請參閱『第2Ν圖』的部分。 利用顯影劑(Developing Solution )去除第一光阻層 38a,使得液體進口 20、喷液室40與喷孔流道52形成連通 的關係,以供液體流動。此圖亦即為本發明之具有偏射型 對稱式加熱片之微型喷液產生器的製作完成圖。 關於本發明之具有偏射型對稱式加熱片之微型喷液產 生器的工作原理,請參閱『第3A〜3E圖』的部分。在微型 喷液產生器中之漏斗狀液體進口 2 〇與喷液室4 〇的内部皆充 填I液體。在環形加熱片28之電極遂開始加熱後,即產生 一環形氣泡70。接著,一微細的液柱74即透過喷孔48,而 經由喷孔流道52推擠出。然後,只要加熱片28之電極持浐 對噴液至中之液體加熱,氣泡7〇也就會不斷地成長,更 一步地將液柱74由此喷孔流道52中推出,如『第3β、 圖』中所示。 則請參閱『第3D、3E圖』的部分。氣泡7〇持續地 成長f合併,同時也擠堡並切斷此液柱7 而形成一液滴朝向目標物喷出。的 氧泡=會裂Γ而形成-液面回縮狀態(圖中未示)。 本叙明之弟_貫施例,請I閱『第4圖』的部分 部分係可以相同的製裎,於々I b 4 / 於矽基材10之兩側分別製作相同Photoresist). After exposure, part of the exposed and unexposed first photoresist layers 38a, 38b remain on the top of the silicon substrate 10. In the future, a precise positioning and size of the liquid spray chamber 40 must be made here, so + is one of the key points of the present invention. V ~ Please refer to "Figure 2H" next. A metal seed layer 46 is deposited on the top of the exposed and unexposed first photoresist layers 38a, 38b, and a pattern of a spray hole 48 is transferred in the metal seed layer 46. The metal seed layer 46 can be deposited by sputtering or vapor deposition to deposit a metal layer of chromium (Cr) or nickel (Ni) θ alloy. Then, the fifth photomask is used for the photolithography process to determine the size and position of the spray holes 48. Finally, the metal seed layer 46 after the photolithography is removed by wet etching to form a spray hole. The spin coating method is used to deposit a second photoresist layer 50a, and a spray is transferred in a pot case. The second photoresist layer 50b is formed by opening the flow channel 52, as shown in the following figure. After the above deposition process is completed, the second photoresist is then removed by 2 :: 4! The layer 50a 'allows the nozzle hole flow channel 52 to continue to remain at the top of the nozzle hole 48, as shown in the figure. Then, the nozzle plate 54 is continued to be fabricated by electroplating nickel technology, as shown in the figure. The wet etching method is used to remove 50b of the nozzle hole sheet 54 to form a layer P with the spray liquid, which is "Figure 2L." Stomach fluid to 4◦ communicating hole channel 52, this is Next, the reverse side of the Shi Xi substrate was subjected to 513378 using the reactive ion post-etching method. 5. Description of the invention (9) The etching was performed to remove the second insulating layer 18 of the silicon substrate 10, so that the liquid inlet 2 0 and The first insulating layer 16 can exist in an unshielded form, such as 7F in the "2% chart" ° For the last process of the present invention, please refer to "Figure 2N The first photoresist layer 38a is removed by using a developing solution, so that the liquid inlet 20, the liquid spray chamber 40 and the spray hole flow channel 52 are connected to each other for liquid flow. This figure is also the present invention The completed drawing of the micro-spray generator with polarized symmetrical heating sheet. For the working principle of the micro-spray generator with polarized symmetrical heating sheet, please refer to "Figures 3A ~ 3E" The funnel-shaped liquid inlet 20 and the liquid-spraying chamber 40 in the micro-spray generator are filled with I liquid. After the electrode of the ring-shaped heating plate 28 starts heating, a ring-shaped bubble 70 is generated. Next, a fine liquid column 74 passes through the nozzle hole 48 and is pushed out through the nozzle hole flow channel 52. Then, as long as the electrode of the heating sheet 28 heats the liquid sprayed to the middle, the bubble 70 will also Continue to grow and push the liquid column 74 out of the orifice flow channel 52 further, as shown in the "Figure 3β, Figure". Please refer to the "Figure 3D, 3E" section. The bubble 70 continues Grow f merge, also squeeze the fort and cut this Column 7 forms a droplet that is ejected toward the target. Oxygen bubble = will split Γ and form-liquid surface retracted state (not shown in the figure). The younger brother of this description _ Guan Example, please read "第 4 Some parts of the figure can be made in the same way, and the same can be made on 々I b 4 / on both sides of the silicon substrate 10

的加熱片28與個別的喷嗜^R J 力J日]貝為bba、5 6b,如此更可提昇噴液密Heating plate 28 and individual sprays ^ R J force J day] shells are bba, 5 6b, so the spray liquid density can be improved even more

第12頁 種具有偏射型 法,係可解決 的一些固有問 不穩定的現象 明運用二次厚 生器。除了可 佳實施例揭露 熟習相關技藝 作些許之更; 說明書所附之 五、發明說明(10) 度。 【發明之功效】 應用本發明之_ 液產生器及其製造方 (如喷墨印表機等) 互干擾與衛星墨滴等 的問題。另外,本發 來製作此微型噴液產 外’還可強化其結構 雖然本發明之較 以限定本發明,任何 精神和範圍内,當可 專利保護範圍須視本 為準。 對稱式加熱片之微型喷 傳統微型喷液產生器 題,例如··流道間之相 ,而造成列印品質不佳 光阻再加上電鍍鎳技術 精確控制其各部之尺寸 如上所述,然其並非用 者,在不脫離本發明之 與潤飾,因此本發明之 申請專利範圍所界定者 m 第13頁 513378 圖式簡單說明 第1A〜1B圖係為本發明之整體剖面示意圖; 第2A〜2N圖係為本發明之製作流程剖面示意圖; 第3A〜3E圖係為本發明之工作流程剖面示意圖;及 第4圖係為本發明第二實施例之剖面示意圖。 【圖式符號說明】There are some inherent problems that can be solved by the polarizing method, which is an unstable phenomenon. The use of a secondary thickener is obvious. In addition to the preferred embodiments, they will be familiar with the relevant techniques and make a little bit more change. The fifth part of the description attached to the specification is the invention description (10). [Effect of the invention] The problem of mutual interference and satellite ink droplets of the liquid generator and its manufacturer (such as inkjet printer, etc.) to which the present invention is applied. In addition, the production of this micro-spraying liquid can also strengthen its structure. Although the present invention is relatively limited to the present invention, the scope of patent protection shall be deemed to prevail in any spirit and scope. Symmetric heating plate sprays traditional micro-spray generator problems, such as the phase between the flow channels, which results in poor print quality, photoresistance, plus electroplated nickel technology to precisely control the dimensions of its parts as described above, but It is not a user, and it does not depart from the present invention and its retouching. Therefore, it is defined by the scope of patent application of the present invention. Page 13 513378 The diagram is a brief description. Figure 2N is a schematic sectional view of the manufacturing process of the present invention; Figures 3A to 3E are schematic sectional views of the working process of the present invention; and Figure 4 is a schematic sectional view of the second embodiment of the present invention. [Illustration of Symbols]

第U頁 10 矽 基 材 12 上 表 面 14 下 表 面 16 第 一 絕 緣 層 18 第 二 絕 緣 層 20 液 體 進 D 28 加 孰 片 34 電 導 線 36 保 護 層 38a ,38b 第 一 光 阻 層 40 喷 液 室 46 金 屬 種 子 層 48 喷 孔 5 0a ,50b 第 二 光 阻 層 52 喷 孔 流 道 54 喷 孔 片 5 6a ,56b 喷 嘴 70 氣 泡 74 液 柱Page U 10 Silicon substrate 12 Upper surface 14 Lower surface 16 First insulating layer 18 Second insulating layer 20 Liquid entering D 28 Adding tabs 34 Electrical wires 36 Protective layers 38a, 38b First photoresist layer 40 Liquid spraying chamber 46 Metal seed layer 48 Nozzle 5 0a, 50b Second photoresist layer 52 Nozzle flow channel 54 Nozzle piece 5 6a, 56b Nozzle 70 Bubble 74 Liquid column

Claims (1)

513378 六、申請專利範圍 1. 一種具有偏射型對稱式加熱片之微型喷液產生器之製 造方法,係包含下列步驟: 提供一具有上表面與下表面之矽基材; 於該矽基材之上表面與下表面處分別形成一第一 絕緣層及第二絕緣層; 去除該下表面之第二絕緣層,而形成一開口; 於該開口朝向該矽基材中,形成一漏斗狀之液體 進口 ; 於該上表面之第一絕緣層形成一環形對稱式加熱 片; 沈積與圖案轉移一電導線,並與該加熱片連接, 而形成電性導通; 於該加熱片與該第一絕緣層之頂端沈積一第三絕 緣層; 於該第三絕緣層之上旋塗一第一光阻層; 於該第一光阻層中圖案轉移一喷液室; 於該第一光阻層沈積一金屬種子層,並且於該金 屬種子層中圖案轉移一喷孔; 於該金屬種子層旋塗一第二光阻層,並且圖案轉 移至該喷孔; 移去除該喷孔頂端以外之該第二光阻層; 於該金屬種子層之頂端電鍍一鎳層,並將該喷孔 頂端之該第二光阻層封入該鎳層中; 除去該噴孔之該第二光阻層;513378 VI. Scope of patent application 1. A method for manufacturing a micro-spray generator with a polarized symmetrical heating plate, comprising the following steps: providing a silicon substrate with an upper surface and a lower surface; and on the silicon substrate A first insulating layer and a second insulating layer are formed at the upper surface and the lower surface, respectively; the second insulating layer on the lower surface is removed to form an opening; and a funnel-shaped opening is formed in the opening facing the silicon substrate. Liquid inlet; forming a ring-shaped symmetrical heating sheet on the first insulating layer on the upper surface; depositing and transferring an electric wire with the pattern, and connecting with the heating sheet to form electrical conduction; and heating the sheet with the first insulation A third insulating layer is deposited on the top of the layer; a first photoresist layer is spin-coated on the third insulating layer; a pattern spraying chamber is transferred in the first photoresist layer; and the first photoresist layer is deposited A metal seed layer, and a spray hole is pattern-shifted in the metal seed layer; a second photoresist layer is spin-coated on the metal seed layer, and the pattern is transferred to the spray hole; other than the top of the spray hole is removed The second photoresist layer; electroplating a nickel layer on the top of the metal seed layer, and sealing the second photoresist layer on the top of the spray hole into the nickel layer; removing the second photoresist layer on the spray hole; 第15頁Page 15 ^ 移去位於該矽基材 得該液體進口與該第一 在;及 之下表面之該第二絕緣層, 絕緣層能以無遮蔽的形式广 2· 除去该喷液室之該第一光阻層。 申明專利範圍第1項所述具有偏射型對稱 微型喷液產生器之製造方法,其中該第—與第°_.、'片之 層至少選自於由二氧化矽(s i 〇2 )與氮化矽(s •广緣 所組成的族群中之材質。 13 4 ) 3. 4. 如申請專利範圍第1項所述具有偏射型對稱式; U型噴液產生器之製造方法,其中該第一與第 層之厚度至少為1 0 0 0埃。 、 如申請專利範圍第1項所述具有偏射型對稱式力。執 微型喷液產生器之製造方法,其中該第二絕緣層、、、片之 除方式係採用反應性離子蝕刻法。 q之去 热片之 〜絕緣 5. 如申睛專利範圍第1項所述具有偏射型對稱式力。气 微型噴液產生器之製造方法,其中該液體進口六、、片之 含有氫氧化鉀(K 0 H )的溶液,並以濕式钱刻法於上 基材中形成。 ^亥石夕 如申請專利範圍第1項所述具有偏射型對稱式加熱片 微型噴液產生器之製造方法,其中該液體進口係“使用< 含有氫氧四甲基氨(TM AH )的溶液,並以濕式 於該石夕基材中形成。 ^法 如申請專利範圍第1項所述具有偏射型對稱式加熱片之 微型噴液產生器之製造方法,其中該加熱片之材料至^ Remove the liquid inlet and the first on the silicon substrate; and the second insulating layer on the lower surface, the insulating layer can be widened in an unshielded manner. 2. Remove the first light in the liquid spray chamber Barrier layer. The method for manufacturing a symmetric miniature liquid ejection generator with a polarization type described in item 1 of the stated patent scope, wherein the layers of the-and ° _., 'Sheets are at least selected from the group consisting of silicon dioxide (si 〇2) and Silicon nitride (s • material of the group consisting of wide margin. 13 4) 3. 4. It has a polarized symmetrical type as described in item 1 of the scope of patent application; a method for manufacturing a U-shaped liquid jet generator, wherein The thickness of the first and second layers is at least 100 angstroms. As described in item 1 of the scope of the patent application, it has a polarizing symmetrical force. The manufacturing method of the micro-spray generator is performed, wherein the method of removing the second insulating layer is a reactive ion etching method. q away from the heat sheet ~ insulation 5. As described in the first item of Shenyan patent scope, it has a polarizing symmetrical force. A method for manufacturing a gas micro-spray generator, wherein the liquid inlet is a solution containing potassium hydroxide (K 0 H), and is formed in the upper substrate by a wet coin method. ^ Hai Shixi, as described in item 1 of the scope of the patent application, a method for manufacturing a micro-liquid spray generator with a polarized symmetrical heating plate, wherein the liquid inlet is "using < tetrahydrogen ammonia (TM AH) The solution is formed in the Shixi substrate by a wet method. ^ The method is a method for manufacturing a micro-spray generator with a polarized symmetrical heating plate as described in item 1 of the scope of patent application, wherein the heating plate is Material to 513378 六、申請專利範圍 少選自於由鋁化鈕(TaAl )、綳化銓(HfB2 )、硼化 锆(z^)、氮化钽(TaN)以及鉑(Pt )所組成的族 群中之材質。 8·如申請專利範圍第丨頊所述具有偏射型對稱式加熱片之 微型喷液產生器之製造方法’其中該第三絕緣層至少 選自於由氮化矽(si3N4 )與碳化矽(Sic )所組成的^ 族群中之材質。 9.如申請專利範圍第1頊所述具有偏射型對稱式加熱片之 被型贺液產生器之製造方法’其中该第一光阻層之較 佳厚度至少為1微米。 I 〇 ·如申請專利範圍第1項所述具有偏射型對稱式加熱片之 微型喷液產生器之製造方法,其中該金屬種子層至少 選自於由鉻(C r )與鎳(N i )所組成的族群中之姑 質。 ’、 II ·如申請專利範圍第1項所述具有偏射型對稱式加熱片之 微型喷液產生器之製造方法,其中第一與第二光阻層 之除去方式係採用濕式蝕刻法。 12 ·如申請專利範圍第1項所述具有偏射型對稱式加熱片之 Μ型噴液產生器之製造方法,其中該第二光阻層之厚 度至少為2微米。 予 1 3 ·如申請專利範圍第1項所述具有偏射型對稱式加熱片之 微型喷液產生器之製造方法,其中該喷孔係形成於該 金屬種子層中,並與該加熱片形成相鄰的關係。 1 4 · 一種具有偏射型對稱式加熱片之微型喷液產生器,係513378 6. The scope of patent application is selected from the group consisting of aluminized button (TaAl), hafnium hafnium (HfB2), zirconium boride (z ^), tantalum nitride (TaN), and platinum (Pt). Material. 8. The method for manufacturing a micro-spray generator with a polarized symmetrical heating plate as described in the scope of the patent application, wherein the third insulating layer is at least selected from the group consisting of silicon nitride (si3N4) and silicon carbide ( Sic). 9. The manufacturing method of the quilt type fluid generator with a polarized symmetrical heating sheet as described in the first range of the patent application ', wherein the preferred thickness of the first photoresist layer is at least 1 micron. I 〇 · The method for manufacturing a micro-spray generator with a polarized symmetrical heating plate as described in item 1 of the scope of the patent application, wherein the metal seed layer is at least selected from the group consisting of chromium (C r) and nickel (N i ) In the ethnic group. ', II · The method of manufacturing a micro-spray generator with a polarized symmetrical heating plate as described in item 1 of the scope of the patent application, wherein the first and second photoresist layers are removed by a wet etching method. 12. The manufacturing method of the M-type liquid jet generator with a polarized symmetrical heating plate as described in item 1 of the scope of the patent application, wherein the thickness of the second photoresist layer is at least 2 microns. 1 1 · The method for manufacturing a micro-spray liquid generator with a polarized symmetrical heating plate as described in item 1 of the scope of patent application, wherein the spray holes are formed in the metal seed layer and formed with the heating plate Adjacent relationship. 1 4 · Miniature liquid spray generator with polarized symmetrical heating plate 六、申請專利範圍 包含: 一石夕基材, 一第一與第 上表面與下表面 一漏斗狀之 一絕緣層之中; 一環形對稱 絕緣層的上方; 一電導線, 性導通; 一第三絕緣 片之頂端; 一第一光阻 一噴液室, 液室與該液體進 熱片係位於該喷 一金屬種子 一噴孔,係 一鎳層,係 具有一穿孔,該 流動。 1 5 ·如申請專利範圍 之微型喷液產生 至少為1 ο ο 〇埃。 具有 二絕 處; 液體 式力π 係與 層, 層, 係形 〇形 液室 層, 形成 設置 穿孔 第14 器, 熱片 係形 成於 成連 中而 係設 於該 於該 與該 項所 其中 一上表面舆一下表面; 緣層’係分別形成於該矽基材之 進口 ’係形成於該矽基材與該第 ’係形成於該上表面之第 该加熱片係相互連接,而形成電 係形成於該第一絕緣層與該加埶 成於该第三絕緣層之頂端; 該第一光阻層中,使得該噴 通,以供一液體流動,該加 形成一喷液機制; 置於該第一光阻層之上方; 金屬種子層中;及 金屬種子層之頂端,該鎳層 喷孔形成連通,以供該液體 述具有偏射型對稱式加熱片 該第一與第二絕緣層之厚度6. The scope of the patent application includes: a Shixi substrate, a first and a top surface and a bottom surface in a funnel-shaped insulating layer; a ring-shaped symmetrical insulating layer above; an electrical lead, sexually conductive; a third The top of the insulating sheet; a first photoresistance and a liquid spraying chamber, the liquid chamber and the liquid heating sheet are located in the spraying a metal seed, a spraying hole, a nickel layer, a perforation, and flow. 1 5 · The micro-spraying liquid in the scope of patent application produces at least 1 ο ο 〇 angstrom. It has two extreme points; the liquid force π system and layer, layer, system 0-shaped liquid chamber layer, forming a perforated 14th device, the hot film system is formed in the connection and is located in one of the and the institute. The upper surface and the lower surface; the marginal layers are formed at the inlets of the silicon substrate, respectively, are formed on the silicon substrate and the first heating sheet system formed on the upper surface are connected to each other to form an electrical system. Formed on the top of the first insulating layer and the third insulating layer on the top of the third insulating layer; in the first photoresist layer, the spray is allowed to flow for a liquid to flow, and the addition forms a liquid spray mechanism; Above the first photoresist layer; in the metal seed layer; and on the top of the metal seed layer, the nickel layer spray holes form communication for the liquid to have a polarized symmetrical heating sheet, the first and second insulating layers Thickness 513378 六、申請專利範圍 1 6 ·如申請專利範圍第丨4項所述具有偏射型對稱式加熱片 之微型喷液產生器,其中該弟一光阻層之較佳厚度至 少為1微米。 1 7 ·如申請專利範圍第丨4項所述具有偏射型對稱式加熱片 之微型喷液產生器,其中該喷孔係貼近於該加熱片。 1 8 ·如申請專利範圍第1 4項戶斤述具有偏射型對稱式加熱片 之微型喷液產生器,其中該弟一與弟一絕緣層至少選 自於由二氧化矽(S i 02 )與氮化矽(S丨3队)所組成的 族群中之材質。 1 9 ·如申請專利範圍第丨4項所述具有偏射型對稱式加熱片 之微型喷液產生器,其中該液體進口係使用含有氫氧 化鉀(KOH )的溶液,旅以濕式姓刻法於該矽基材中形 成。 2 0.如申請專利範圍第丨4項所述具有偏射型對稱式加熱片 之微型喷液產生器,其中該液體進口係使用含有氫氧 四甲基氨(TMAH )的溶液,並以濕式钱刻法於該矽基 材中形成。 2 1 ·如申請專利範圍第丨4項所述具有偏射型對稱式加熱片 之微型喷液產生器,其中該加熱片之材料至少選自於 由鋁化鈒(TaA 1 )、鑭化給(Hf B2 )、硼化鍅(ZrB2 )、氮化组(T a N )以及韵(P七)所組成的族群中之材 質。 2 2 ·如申請專利範圍第1 4項所述具有偏射型對稱式加熱片 之微型噴液產生器,其中該金屬種子層至少選自於由513378 6. Scope of patent application 16 · As described in item 4 of the scope of patent application, the micro-spray generator with polarized symmetrical heating plate, wherein the preferred thickness of the photoresist layer is at least 1 micron. 1 7 · The micro-spray generator with a polarized symmetrical heating plate as described in item 4 of the scope of patent application, wherein the spray hole is close to the heating plate. 1 8 · According to item 14 of the scope of the patent application, a micro-spray generator with a polarized symmetrical heating plate is described, in which the first and second insulation layers are at least selected from silicon dioxide (S i 02 ) And silicon nitride (S 丨 3 team) in the group of materials. 1 9 · As described in item 4 of the scope of the patent application, a miniature liquid spray generator with a polarized symmetrical heating plate, wherein the liquid inlet uses a solution containing potassium hydroxide (KOH) Can be formed in the silicon substrate. 2 0. The micro-liquid spray generator with a polarizing symmetrical heating plate as described in item 4 of the scope of the patent application, wherein the liquid inlet uses a solution containing tetramethylammonium hydroxide (TMAH) and wet A coin carving method is formed in the silicon substrate. 2 1 · The micro-spray generator with a polarized symmetrical heating plate as described in item 4 of the scope of patent application, wherein the material of the heating plate is at least selected from the group consisting of TaA 1 and lanthanum. (Hf B2), hafnium boride (ZrB2), nitride group (T a N), and rhyme (P 7). 2 2 · The micro-spray generator with a polarized symmetrical heating plate as described in item 14 of the scope of patent application, wherein the metal seed layer is at least selected from the group consisting of 第19頁 513378Page 513 378 六、申請專利範圍 、, 鉻(Cr )與鎳(Ni )所錤成的族群中之材質。 2 3 ·如申請專利範圍第1 4項所述具有偏射型對稱式加熱片 之微型喷液產生器,其中該加熱片係並置於該噴孔。 24·如申請專利範圍第丨4項所述具有偏射型對稱式加熱片 之微型喷液產生器,其中該喷孔係形成於該噴液室 中,並與該加熱片形成背對的關係。 2 5 ·如申請專利範圍第1 4項所述具有偏射型對稱式加 之微型噴液產生器,其中該微型噴液產生哭“、、片 成型的方式製作而成。 “糸以-體Sixth, the scope of patent application, the material of the group formed by chromium (Cr) and nickel (Ni). 2 3 · The micro-spray generator with a polarized symmetrical heating plate as described in item 14 of the scope of patent application, wherein the heating plate is placed side by side in the spray hole. 24. The micro-liquid spray generator with a polarized symmetrical heating plate as described in item 4 of the patent application scope, wherein the spray hole is formed in the liquid spray chamber and forms a back-to-back relationship with the heating plate . 2 5 · As described in item 14 of the scope of the patent application, there is a polarized symmetrical symmetrical type plus a micro-spray generator, in which the micro-spray generates a cry, ", and a sheet."
TW91101434A 2002-01-29 2002-01-29 Micro droplet generator having off-shooter, symmetrical heating fins and method for manufacturing the same TW513378B (en)

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