TW519518B - Micro-droplet generator with liquid fast backfill mechanism and manufacturing method thereof - Google Patents
Micro-droplet generator with liquid fast backfill mechanism and manufacturing method thereof Download PDFInfo
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5l95i8 五、發明說明(1) 【發明之應用範圍】 本發明係關於一種微型嘴液產生器,特別關於 且 回填機制之微型噴液產生器及其製造方法,、 (Micro-Droplet Generator) 近年决/虹務化,形成液滴而噴出之精密微型流體元件。 應用Ϊ電子科技的突飛猛進,使得微型喷液產生器 已日趨d術,如贺墨印表機及彩色濾光片等的製作 目:ii前更朝向高解析度…液精度與效率的 稱的:π液產=用於喷墨印表機的結構中,亦即俗 於喷黑:ί,疋其中最基本的機械裝置。而使用者對 的要=機§f s重點,則在高喷出頻率與高空間解析度 0要求Z,贺墨頭是否能有良好的喷墨性能表現。 類型目:::亡喷墨印表機可略分為壓電式與熱氣泡式兩 形成黑t電式嘴墨印表機係採用壓電致動器,將墨水擠出 設置;::另一種類型即為熱氣泡式喷墨印表冑,則利用 推出二:之加熱片發熱而生成一氣泡,將墨滴由喷墨室 的現】?。* ϋ墨滴尾端之液柱的速*分布係呈現不均勻 脫離、y ^亦即丽端速度大,而後端速度小),所以在墨滴 ^桎時,即會形成衛星墨滴與墨滴運動方向不垂直等 二姑二另外,因氣泡產生時,壓力會傳遞到墨水流道中, t賀墨室間會有相互干擾(Cross Talk)的現象。上 迷這些現象都會造成列印品質不佳的問題。 Μ _ f 第4頁 5195185l95i8 V. Description of the invention (1) [Scope of application of the invention] The present invention relates to a micro nozzle liquid generator, in particular to a micro-spray generator with a backfill mechanism and a manufacturing method thereof. (Micro-Droplet Generator) / Hongwu, precision micro-fluidic element forming droplets and ejecting. The rapid development of the application of Ϊelectronics technology has made micro-spray generators more and more popular, such as the production of He ink printers and color filters. The purpose of ii is to move towards high resolution ... π liquid production = used in the structure of inkjet printers, that is, commonly used in jetting black: 疋, the most basic mechanical device. The user's emphasis is on the machine § f s. At high ejection frequency and high spatial resolution, 0 is required for Z. Whether the ink head can perform well in inkjet performance. Type: ::: Inkjet printers can be divided into two types: piezoelectric type and thermal bubble type. Black t electric nozzle ink printers use piezoelectric actuators to squeeze out the ink; One type is the thermal bubble type inkjet printer 胄, which uses the second one: the heating sheet generates heat to generate a bubble, and the ink droplets are discharged from the inkjet chamber. * The velocity of the liquid column at the tail end of the ink drop is distributed unevenly, y ^ (ie, the end speed is large, and the back end speed is small), so when the ink drop ^ 桎, satellite ink drops and ink will be formed. The movement direction of the drop is not vertical, etc. In addition, when the bubble is generated, the pressure will be transmitted to the ink flow path, and there will be cross talk between the ink chambers. All of these phenomena can cause poor print quality. Μ _ f p. 4 519518
至於熱氣泡式喷墨印矣擔 +吉Μ問日s n产 Ρ表機的另一項關鍵,即為墨水回 填的問通。傳統氣泡式嗜專 ^ . ^ . ^ Α匕八噴墨頭係使用回縮液面的表面張力 作為墨水回填的驅動力。 > 刀 口為表面張力很微弱,使得墨水 回流速度报f交,導致H k π 4古 & & y #、Γ、 水回填時間較長,而降低了喷出頻 率。為了解決以上問題,習j .„ r, w — 哽白知技術便設計一具有開關閘門 洛月土 :: 7匣,猎以提高供墨壓力,而加快墨水回流速 度。运樣的做法雖然可避免多餘的墨水從噴孔中溢出,但 也由於閘門開關增加顏料微粒堆積的發生,而造成墨水之 堵塞。習知的技術如授予Kim的美國專利US6, ι〇2, 53〇與 IEEE MENS 01中Lee等人的發明,基本上皆為單一加熱片 的設計,ϋ未提供第二加熱片以主動的方式來加速墨水回 填。 【發明之目的與概述】 鑒於以上習知技術的問題,本發明的目的在於揭露一 種具有液體快速回填機制之微型噴液產生器及其製造方 法,其概述如下: 本發明之製造方法係包含下列步驟:提供一具有上表 面與下表面之矽基材;於矽基材之上表面與下表面處分別 形成一厚度至少為1 0 0 〇埃之第一絕緣層及第二絕緣層(材 質可由二氧化矽(Si〇2)與氮化矽(Si3N4)中任選其〆 );以反應性離子蝕刻法去除矽基材下表面之第二絕緣 層,而形成一開口;使用含有氫氧化鉀(K〇H )或氫氧化 四曱銨((CH3)4NOH )的溶液,以濕式蝕刻法於開口朝向矽 基材中,形成一漏斗狀之該液體進口 (Manifold) ·,於該As for the hot-bubble inkjet printing ink bag + MEMS, the other key to the production of P meter is the question of ink backfilling. The traditional bubble-type addiction ^. ^. ^ Α Dagger eight inkjet head uses the surface tension of the retracted liquid surface as the driving force for ink backfill. > The blade has a very weak surface tension, which causes the ink reflow rate to be reported as f, which results in a longer time for H k π 4 & y #, Γ and water refill, which reduces the ejection frequency. In order to solve the above problems, Xi j. „R, w — Bai Zhi technology designed a Luo Yue soil with a switch gate :: 7 boxes, hunting to increase the ink supply pressure and speed up the ink reflow speed. Avoid excessive ink from overflowing from the nozzle, but also block the ink due to the accumulation of pigment particles by the gate switch. Known techniques such as US Patent No. 6,265,53 and IEEE 01 issued to Kim The inventions of Lee and others are basically the design of a single heating sheet, and the second heating sheet is not provided to accelerate the ink backfill in an active manner. [Objective and Summary of the Invention] In view of the problems of the conventional technology, the present invention The purpose of the invention is to disclose a micro liquid ejector with rapid liquid backfilling mechanism and its manufacturing method, which are summarized as follows: The manufacturing method of the present invention includes the following steps: providing a silicon substrate with an upper surface and a lower surface; A first insulating layer and a second insulating layer each having a thickness of at least 100 angstroms are formed at the upper surface and the lower surface of the substrate (the materials can be made of silicon dioxide (SiO2) and nitrogen). Silicon (Si3N4) is optional; ii); the second insulating layer on the lower surface of the silicon substrate is removed by reactive ion etching to form an opening; using potassium hydroxide (KOH) or tetraammonium hydroxide The solution of ((CH3) 4NOH) was formed into a funnel-shaped liquid inlet (Manifold) in a wet etching method in which the opening faces the silicon substrate.
519518 五、發明說明(3) 上表面之第一絕緣層之兩側分別形成一第一加熱片及一第 二加熱片(材質可由鋁化钽(TaAl)、綳化铪(HfB2)呆 硼化锆(ZrB2 )、氮化鈕(TaN )及鉑(Pt )中任選2其一、 );沈積與圖案轉移一對電導線,分別與該第一加熱片及 該第二加熱片連接,而形成電性導通;於第一加熱^、μ 一,熱片及第一絕緣層之頂端沈積一第三絕緣層(材質 由氮化矽(S is比)與碳化矽(s i C )中任選其一);於^ 二絕緣層之上旋塗一厚度至少為丨微米之第一光阻層;= 紫外線曝光之方式於此第一光阻層中圖案轉移一噴液 一辅助液室,且噴液室與辅助液室形成連通,以供液二 動;於第-光阻層沈積一金屬種子層(材質可以是路机 )或鎳(Νι)),並且於此金屬種子層中圖案轉移一 (In Jector 0rifice);於此金屬種子層旋塗_ 、 為2微米之第二光阻層,並且圖案轉移至噴孔;移去又除-贺孔頂端以外之第二光阻層;於金屬種子層之頂端電、 鎳層、,並將此噴孔頂端之第二光阻層封入鎳層中以:二 去喷孔之第二光阻層;於矽基材之下表面處:、、:乂 反應性離子㈣法移去第二絕緣@,使得液體進口 一 絕緣層能以無遮蔽的形式存纟,最後再以濕式法= 贺液室舆輔助液室之第-光阻層,即可完成本發明之= 噴液產生器。 十如Θ之被型519518 V. Description of the invention (3) A first heating sheet and a second heating sheet are respectively formed on both sides of the first insulating layer on the upper surface (the material can be boronized by tantalum alumina (TaAl), hafnium hafnium (HfB2)) Zirconium (ZrB2), nitride button (TaN), and platinum (Pt), any one of two,); a pair of electrical wires for deposition and pattern transfer, which are respectively connected to the first heating sheet and the second heating sheet, and Forming electrical continuity; depositing a third insulating layer (the material is selected from silicon nitride (S is ratio) and silicon carbide (si C)) on the top of the first heating substrate, the first heating layer, and the first insulating layer. First); spin-coat a first photoresist layer with a thickness of at least 丨 micron on the two insulating layers; = UV exposure to pattern transfer in this first photoresist layer a spray liquid and an auxiliary liquid chamber, and The liquid spraying chamber is in communication with the auxiliary liquid chamber for liquid movement. A metal seed layer (material can be road machine) or nickel (Ni) is deposited on the first photoresist layer, and the pattern is transferred in the metal seed layer. First (In Jector 0rifice); the metal seed layer is spin-coated with a 2 micron second photoresist layer, and the pattern is transferred to the spray ; Remove the second photoresist layer except the top of the hole; electrically and nickel the top of the metal seed layer, and seal the second photoresist layer at the top of this nozzle into the nickel layer: The second photoresist layer in the hole; at the lower surface of the silicon substrate: ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Reactive ion, remove the second insulation By the wet method = the first photoresist layer of the auxiliary liquid chamber, the liquid spray generator can be completed. Quilt like Θ
本發明的另一個 制之微型喷液產生 石夕基材,具有一上 目的在於提供一種 器,此裝置主要分 表面與一下表面; 具有液體快速回填 成以下幾個部分: 一第一與第二絕緣Another micro-liquid spray-producing substrate made by the present invention has a purpose of providing a device, which is mainly divided into a surface and a lower surface; the liquid is quickly backfilled into the following parts: a first and a second insulation
五、發明說明(4) 層’係分別形成於碎美姑 第二絕緣層之厚声s小^ 表面與下表面處,而第一舆 由二氧化石夕(Si0又)上:000埃(Angstroms) ’材質可 斗狀之液雕、隹口 2 )/、, 矽(SisN4)中任選其一;一漏 第一與第:力埶Η係形成於石夕基材與第二絕緣層之中;一 之兩側^ Λ,係分別形成於上表面之第一絕緣層上 :rLB:)\^r;rTri) —- 一斟雪道I 見化1旦(TaN)及始(Pt )中任選其一; m,係分別與第一加熱片及第二加熱片相互連 Γ ^成電性導通;—第三料層,係形成於第—絕緣 ^ —加熱片及第二加熱片之頂端;一第一光阻層,係 形成=第三絕緣層之頂端,第一光阻層之厚度至少為丨微'、 米,矣液至,係形成於第一光阻層中,以供液體流動, 第一^熱片係位於此喷液室中’而形成一喷液機制;^輔 助液至,係形成於第一光阻層中,使得辅助液室、噴液室 與液體進口三者形成連通,以供液體流動,第二加熱片係 位於此辅助液室,而形成一液體快速回填機制;一金屬種 子層,係設置於第一光阻層之上方,材質可以是鉻(&) 或鎳(N i ); —喷孔,係形成於該金屬種子層中,以及一 鎳層’係設置於金屬種子層之頂端,此鎳層具有一穿孔, 此穿孔與該喷孔形成連通,以供液體流動。 因此,本發明的目標主要是採用二次厚光阻,再加上 電鍍鎳技術,藉以製造出具有液體快速回填機制之微型喷 液產生器(包含加熱片、喷孔流道(In jector Passageway)與喷孔 >1 (Orifice Plate)等)。這不但 五、發明說明(5)V. Description of the invention (4) The layers' are formed on the surface and the lower surface of the thick sound of the second insulation layer of the crushed Meigu respectively, and the first surface is made of SiO2 (Si0): 000 angstrom ( Angstroms) 'Material can be liquid-shaped carving, 隹 口 2) /, or silicon (SisN4); one of the first and the second: the force is formed on the base material and the second insulation layer Among the two sides of one ^ Λ are formed on the first insulating layer on the upper surface: rLB:) \ ^ r; rTri) —- a snowy road I see Hua Dan 1 (TaN) and beginning (Pt ); M, which is interconnected with the first heating sheet and the second heating sheet respectively Γ ^ to be electrically conductive;-the third layer is formed on the first insulation sheet and the second heating sheet The top of the sheet; a first photoresist layer is formed = the top of the third insulating layer, and the thickness of the first photoresist layer is at least 丨 micrometer, meter, and liquid, is formed in the first photoresist layer, For the liquid to flow, the first thermal film is located in the liquid spraying chamber to form a liquid spraying mechanism; the auxiliary liquid to is formed in the first photoresist layer, so that the auxiliary liquid chamber, the liquid spraying chamber and the liquid Enter The three are connected for liquid to flow. The second heating sheet is located in this auxiliary liquid chamber to form a rapid liquid backfill mechanism. A metal seed layer is disposed above the first photoresist layer. The material can be chromium ( &) or nickel (Ni);-a spray hole is formed in the metal seed layer, and a nickel layer is provided on the top of the metal seed layer, the nickel layer has a perforation, the perforation and the spray hole Connectivity is established for liquid flow. Therefore, the objective of the present invention is mainly to use a secondary thick photoresist, coupled with electroplated nickel technology, so as to manufacture a miniature liquid spray generator (including a heating plate and a nozzle passageway) with a rapid liquid backfill mechanism. And nozzles> 1 (Orifice Plate), etc.). This is not only V. Description of invention (5)
能使得噴液產生器 θ S 虱泡式噴墨印表機列印:::二:控制,·可改善傳統熱 有關本發明的特血二土二結構孱弱的缺陷。 詳細說明如下。 /、貝作,k配合圖式作最佳實施例 【务明之詳細說明】 本發明係揭露_链θ 士、 產生器及其製造方法。:制回填機制之微型喷液 (以旋塗法形成之)i 係為運用二次厚光阻 術,而可製作 加上電鍍鎳技術以及微系統製程技 阻旋塗法以f =液產生為。I先,運用第一厚光 厚光阻旋塗2 、=室與一輔助液室;其次,運用第二 用電鏡技術層’用以形成-喷孔。最後,運 除後形成所需士孔s,、S々而製作一錄層,並在第二光阻層去 型噴液產生:二制1:使液滴由噴孔處射出。本發明之微 成型的方式ί = = ϊ 採用微系統製程技術,以一體 本考χ明之微型喷液產味哭,盆士 基材。於此欲I分^ 生ro /、主要材質係採用單晶矽 片為产形基材 側形成第一加熱片,而此第一加熱 另外衣‘ ΐ對稱結構1以產生數量多且品質佳之液滴。 決f- Η 弟一加熱片之電極係具備高方向垂直性,遂可解 的、^ ί墨滴的問題、抑制相鄰喷液室與流道間之相互干擾 、 以及降低流道中孔蝕(Cavi tation )的發生。 並推ί外’於喷液室中之第一加熱片的電極產生出氣泡’ =f出液滴之後’位於噴液室上游之第二加熱片的電極 返即產生氣泡,將液體加速推向喷液室。這樣的做法除It can make the liquid jet generator θ S flea-type inkjet printer to print ::: 2: control, and can improve the traditional heat. The defect of the special blood two soil two structure of the present invention is weak. The details are as follows. / 、 Bei Zuo, k with a diagram for the best embodiment [Detailed description of the matter] The present invention is to disclose _ chain θ, generator, and its manufacturing method. : The micro-spray solution (formed by spin-coating method) for the backfilling mechanism i is to use secondary thick photoresistance technology, and can be produced with electroplated nickel technology and micro-system process technology. The spin-coating method is f = liquid generation as . First, the first thick photoresist spin coating 2 and the second chamber and an auxiliary liquid chamber are used; second, the second electron microscopy technology layer is used to form-spray holes. Finally, after the removal, the required holes s, S, are formed to make a recording layer, and the second type of photoresist layer is used to remove the spraying liquid: two systems 1: the liquid droplets are ejected from the spraying holes. The micro-molding method of the present invention is ί = = ϊ The micro-system process technology is used to integrate the micro-spraying liquid of the present study to produce weeping and pottery substrates. Here, I want to produce ^ ro, and the main material is a single-crystal silicon wafer as the forming substrate side to form a first heating sheet, and this first heating is additionally coated with the ΐ symmetrical structure 1 to produce a large number of liquids of good quality. drop. The electrode system of the first heating element has high verticality, which can solve the problem of ink droplets, suppress the mutual interference between the adjacent spray chamber and the flow channel, and reduce the pore corrosion in the flow channel ( Cavi tation). And pushed out 'bubbles were generated on the electrode of the first heating sheet in the spraying chamber' = f after the droplets were dropped, the electrodes of the second heating sheet located upstream of the spraying chamber generated air bubbles, which accelerated the liquid toward Spray room. In addition to this approach
第8頁 519518 五、發明說明(6) " 了可以縮短液體的回填時π从 兩π切曰、士 + , 守間外,更可提昇液滴喷出頻率。 本發明之加熱片於矽其# & ’暴材上位置的女排,主要可分為 偏射型(Of f Shooter )盥北仏D τ ηι 丄)興背射型(Back Shooter )兩 類,如『第1A、1 B圖』所+ 古—L 丄々 A 、、, 』所不。事貫上,本發明的應用不只 ^ ;上述兩類,任何噴液裝置皆可應用本發明的回填機制 以增加液體回填速度,例如頂射型(Top Sh〇〇ter)或邊 射型(Side Shooter)箄夕哈、右 #士翠 . 夕寻之噴液裝置。偏射型亦即將第一 加熱片28位置相對於喷嘴56a於法線方向進行偏置的安 排。以下將以偏射型結構為一實施例,而予以說明之。至 於兔射型因其製作方法與步驟與偏射型僅有些微的差里, 故不再重複贅述。 八 關於微型喷液產生器的製作流程,首先請參閱『第Μ 圖』的部分。本發明係運用低壓化學氣相沈積法(Page 8 519518 V. Description of the invention (6) " It can shorten the backfill of the liquid when π is cut from two π to +, and it can increase the liquid droplet ejection frequency. The women's volleyball team with the heating sheet of the present invention in silicon # can be mainly divided into two types of off-shooter (Of f Shooter) and back-shooter (Back Shooter). As shown in the "Figure 1A, 1 B" + ancient-L 丄 々 A ,,, "not. Consistently, the application of the present invention is not only ^; the above two types, any liquid ejection device can apply the backfilling mechanism of the present invention to increase the liquid backfilling speed, such as Top Shot or Side Shot Shooter) 箄 夕 哈 、 右 # 士 翠. Xi Xun's spray device. The polarizing type is an arrangement in which the position of the first heating plate 28 is offset from the nozzle 56a in the normal direction. In the following, a polarizing structure is taken as an example for description. As for the rabbit shooting type, the manufacturing method and steps are slightly different from those of the polarizing type, so they will not be repeated. 8. Regarding the manufacturing process of the micro-spray generator, please first refer to the section "Figure M". The present invention uses a low pressure chemical vapor deposition method (
Pressure Chemical Vapor Deposition ’LPCVD)於石夕基 f W ^上表面1 2與下表面1 4處分別形成第一絕緣層1 6以及 第一絕緣層1 8。第一絕緣層丨6與第二絕緣層丨8係可由二 化矽(S 1 〇2 )與氮化矽(s l比)中任選其一來予以製作: 而其厚度可為1〇〇〇埃〜2〇〇0埃(建議最佳值2〇〇〇埃)之 間。石夕基材1 〇係採用外形直徑為丨〇 1 mm以及結晶面為 (1 〇 0 )之P型矽晶圓。在進行第一絕緣層1 6與第二絕緣層 =處理步驟之前,可以化學式濕洗法(RCA Cleaning) ^ 潔此矽晶圓之表面。然後再將其放進爐管中,以濕式氧二 法(Wet 0Xldati〇n Method)形成厚度大於1微米之二气 化發層。 羊Pressure Chemical Vapor Deposition (LPCVD) forms a first insulating layer 16 and a first insulating layer 18 on Shi Xiji f W ^ upper surface 12 and lower surface 14 respectively. The first insulating layer 6 and the second insulating layer 8 are made of one of silicon dioxide (S 1 002) and silicon nitride (sl ratio): and the thickness thereof can be 100%. Angstroms ~ 20000 Angstroms (recommended optimal value 2000 Angstroms). The Shi Xi substrate 10 is a P-type silicon wafer with an outer diameter of 0.1 mm and a crystal plane of (100). Before performing the first insulating layer 16 and the second insulating layer = processing step, the surface of the silicon wafer can be cleaned by chemical wet cleaning (RCA Cleaning). Then put it into the furnace tube to form a two-layer gasification layer with a thickness of more than 1 micron by the wet oxygen method (Wet 0Xldation Method). sheep
第9頁 519518 五、發明說明(7) 接者便運用光微影(Photolithography)製程,於石夕 基材10之其中一面處製作液體進口 20,請參閱『第2B圖』 的部分。使用第一光罩(Photo Mask)來對液體進口 20的 ,關位置予以定義。至於形成此液體進口 2 0的第一步驟即 疋採用反應性離子蝕刻法(Reactive I〇n Etching,RIE ),乾式钱刻(Dry Etching)的方式將第二絕緣層18和 濕氧化層除去一部份。然後採用氫氧化鉀(K〇H )或是氫 氧四甲基氨((CH3)4N0H,Tetra Methyl Ammonium Hydroxide,TMAH)的溶液,以濕式蝕刻(Wet Etching) 的方式,對於矽基材1 〇進行蝕刻。待蝕刻結束後,便以去 離子水(Deionized Water)來漂洗此矽晶圓。 二▲接下來,再次以光微影製程來製作電導線34a、34b, 請參閱『第2C圖』的部分。使用第二光罩於此矽晶圓上定 義出一對電導線34a、34b的個別位置。此電導線34a、34b 可選用鋁(A 1 )或銅(Cu )等導電性良好的材質,將其蒸 鍍於第一絕緣層1 6上之兩側,並且分別圖案轉移 (Pattering)至此對電導線34a、34b。然後再一次地以 去離子水來漂洗此石夕晶圓。 第一加熱片28舆第二加熱片3〇之電極的製作流程,請 簽閱『第2D、2E圖』的部分。將矽基材丨〇兩侧之電導線 34a、3 4b頂端分別沈積一鋁化鉅(TaA丨)合金之金屬層, 並使用第三光罩分別進行圖案轉移至此金屬層,藉以^為 第一加熱片28與第二加熱片30之電極。接著於矽^材1〇頂 端沈積上一層絕緣層或是保護層36,使得第_加$片⑼與Page 9 519518 V. Description of the invention (7) The recipient then used the photolithography process to make a liquid inlet 20 on one side of the Shixi substrate 10, please refer to the section of "Figure 2B". Use the first Photo Mask to define the close position of the liquid inlet 20. As for the first step of forming the liquid inlet 20, the second insulating layer 18 and the wet oxide layer are removed by using a reactive ion etching method (Reactive Ion Etching, RIE) and a dry etching method. Part. Then, using a solution of potassium hydroxide (KOH) or tetramethylammonium hydroxide ((CH3) 4N0H, Tetra Methyl Ammonium Hydroxide, TMAH), wet etching (Wet Etching) was performed on the silicon substrate 1 〇Etching. After the etching is completed, the silicon wafer is rinsed with deionized water. Second ▲ Next, the photo-lithography process is used to make the electrical wires 34a and 34b again. Please refer to the section "Figure 2C". Individual positions of a pair of electrical leads 34a, 34b are defined on the silicon wafer using a second mask. The electrical wires 34a and 34b may be made of aluminum (A 1) or copper (Cu) with good conductivity. The electrical wires 34 a and 34 b are vapor-deposited on both sides of the first insulating layer 16 and patterned respectively. Electric wires 34a, 34b. Then rinse the Shixi wafer again with deionized water. For the manufacturing process of the electrodes of the first heating sheet 28 and the second heating sheet 30, please check the section of "Figures 2D and 2E". A metal layer of an aluminized giant (TaA 丨) alloy is deposited on the tops of the electrical wires 34a, 3 4b on both sides of the silicon substrate, and the pattern is transferred to this metal layer using a third photomask, with ^ as the first The electrodes of the heating plate 28 and the second heating plate 30. Next, an insulating layer or a protective layer 36 is deposited on the top end of the silicon substrate 10, so that
第10頁 519518 五、發明說明(8) 第二加熱片30之電極,以及電導線34a、34b與其他結構之 間能保有良好的隔離效果。此保護層3 6係可由氮化石夕 (SigN4)、一氧化碎(Si〇2)以及碳化秒(siC)中任選 其一或二種組合,而以電漿增強式化學氣相沈積法 (Plasma Enhanced Cheinical Vapor Deposition 5 PECVD )來製作而成。 以旋塗與烘烤的方式於保護層36的頂端形成一第一光 阻層38a,如『第2F圖』所示。第一光阻層38a之厚度至少 為1微米’但是建議最佳值為2 5微米〜3 〇微米。接著再 使用紫外線光(Ultra-Violet Radiation)進行曝光製 私,清參閱『第2 G圖』的部分。使用第四光罩於第一光阻 層38a—中來定義出喷液室40及輔助液室42的大小與位置。 至於第一光阻層38a可依據設計的需求,而採用正光阻 (Positive Photoresist)或負光阻(NegativePage 10 519518 V. Description of the invention (8) The electrodes of the second heating sheet 30 and the electrical wires 34a, 34b and other structures can maintain a good isolation effect. The protective layer 36 can be selected from one or two of SigN4, SiO2 and carbonization seconds (siC), and the plasma-enhanced chemical vapor deposition method ( Plasma Enhanced Cheinical Vapor Deposition 5 PECVD). A first photoresist layer 38a is formed on the top of the protective layer 36 by spin coating and baking, as shown in FIG. 2F. The thickness of the first photoresist layer 38a is at least 1 micron ', but it is recommended that the optimal value be 25 to 30 microns. Then use Ultra-Violet Radiation for exposure and privacy. Please refer to the section “2G”. A fourth photomask is used in the first photoresist layer 38a to define the size and position of the liquid ejection chamber 40 and the auxiliary liquid chamber 42. As for the first photoresist layer 38a, a positive photoresist or a negative photoresist can be used according to the design requirements.
Ph〇t〇resist )。經過曝光後,在矽基材1〇之頂端便存留 有部分的已曝光與未曝光之第一光阻層38a、38b。往後必 須於此處製作一精準定位與尺寸之噴液室4〇與辅助液室 42 ’所以此步驟係為本發明關鍵點之一。 ^接著請參閱『第2H圖』的部分。於已曝光與未曝光之 第:光阻層38a、38b之頂端沈積一金屬種子層46,並在此 金屬種子層46·中圖案轉移出一噴孔48。金屬種子層46可以 藏鍍或蒸鍍的方式,沈積出-鉻(Cr)或帛(Ni)合金之 金屬層。再來便以第五光罩進行光微影製程,藉此定義出 唷孔48的大小與位置。最後則使用濕式蝕刻的方式移除經Phatoresist). After exposure, part of the exposed and unexposed first photoresist layers 38a, 38b remain on the top of the silicon substrate 10. In the future, a precise positioning and size of the liquid injection chamber 40 and the auxiliary liquid chamber 42 'must be made here, so this step is one of the key points of the present invention. ^ Please refer to the section "Figure 2H". A metal seed layer 46 is deposited on top of the exposed and unexposed first: photoresist layers 38a, 38b, and a pattern of a spray hole 48 is transferred in the metal seed layer 46 ·. The metal seed layer 46 may be deposited or vapor-deposited to deposit a metal layer of a chromium (Cr) or hafnium (Ni) alloy. Then, a fifth photomask is used to perform the photolithography process, thereby defining the size and position of the countersink 48. Finally, the process is removed by wet etching.
第11頁 519518 五、發明說明(9) 光微影後之光阻層,而形成一喷孔48。 繼續運用旋塗法沈積出第一' 朵 案轉移-喷孔流道52,而4;先=a’並於其中圖 ^风昂_光阻層,如『筐?τ 圖』所不。上述沈積製程完成後,接下 該喷孔48頂端以外之該第二光 來便開始私去除了 报砘夕筮-止rr狂〔HU处 九阻層5〇&,使得噴孔流道52 形狀之弟一先阻層5Ob能繼續存留於崎 『第2J圖』所示。 …於贺孔48之頂端處’如Page 11 519518 V. Description of the invention (9) The photoresist layer after photolithography forms a spray hole 48. Continue to use spin-coating method to deposit the first 'duo-pattern transfer-nozzle flow channel 52, and 4; first = a' and in it ^ Wind_ photoresist layer, such as "basket? τ graph ”does not. After the above-mentioned deposition process is completed, the second light other than the top of the nozzle hole 48 is removed to start the private removal of the report hole-stop rr fan [Nine resistance layer 50 at the HU & The shape of the first resistance layer 5Ob can continue to exist in Saki [Figure 2J]. … At the top of He Kong 48 ’such as
圖;後錄技術來製作-喷孔片54,如『第2K 5:bW丁-然式蝕刻法來將噴孔片54中之第二光阻層 5〇b私除,錯以形成與噴液室 為『第2L圖』。 思、之賀孔流運52,此即 行姓Ϊ下ϊ則使用反應性離子钱刻法對石夕基材10的背面進 盥第2 基材1〇之第二絕緣層18,使得液體進口2〇 ^弟Ί緣層16能以無遮蔽的形式存在,如『第2M圖』所 利用i ί明之最後一道製程’請參閱『第2N圖』的部分。 38a 衫劑(DeVel〇Pln§ S〇1Uti〇n)去除第一光阻層 道52开/液體進口2G、喷液室4G、輔助液室42與喷孔流 =成連通的關係,以供液體流動。此圖亦即為本發明 圖了 ’夜體快速回填機制之微型噴液產生器的製作完成 部分,請參閱『第3圖』的部分。此 兩侧八用/、弟貫施例之相似的製程,於矽基材10之 刀,衣作相同的加熱片與個別的噴嘴56a、56b,如此Figure; post-recording technology to make-nozzle plate 54, such as "the 2K 5: bW Ding-Ran etching method to privately remove the second photoresist layer 50b in the nozzle plate 54, mistakenly formed and sprayed The liquid chamber is "Figure 2L". Si, Zhi He Kong Liu Yun 52, that is, the surname His Majesty uses the reactive ion money engraving method to enter the second insulating layer 18 of the second substrate 10 on the back of the Shixi substrate 10 to make the liquid inlet 2 〇 ^ The sibling edge layer 16 can exist in an unshielded form, as in the "last figure of the 2M figure", please refer to the "2N figure" section. 38a shirt agent (DeVel〇Pln§ S〇1Uti〇n) removes the first photoresistive layer path 52 open / liquid inlet 2G, liquid spray chamber 4G, auxiliary liquid chamber 42 and the nozzle flow = in a connected relationship for the liquid flow. This figure is also the part of the invention which illustrates the completion of the micro-jet generator of the ‘night body fast backfilling mechanism’. Please refer to the section “Figure 3”. This is a similar process to the two-side / four-step example. It is made on the silicon substrate 10 with the same heating sheet and individual nozzles 56a and 56b.
第12頁 519518 五、發明說明(10) " -- 更可提昇噴液密度。 π關於本發明之具有液體快速回填機制之微型喷液產生 作原理,凊參閱『第4 Α〜4 β圖』的部分。在微型喷 液產生為中之漏斗狀液體進口 20、噴液室40與辅助液室42 =内邛白充填了液體。在第一加熱片28之電極遂開始加熱 n即產生1形氣泡70a。接著’一微細的液柱74即透 過,孔48,而經由喷孔流道52推擠出。在這個階段裡,位 關助液室42中之第二加熱片3〇並未開始加熱。然後,第 :加熱片28之電極持續對噴液室4〇中之液體加埶, 7 0 a不斷地成县,&击、隹 丰丄上μ …、1尤孔/匕 由掩山 Ρ而更進一步地將液柱74由此噴孔流道52 中推出’如『第4B、4C圖』中所示。 地^後^請參閱『第4C、4D圖』的部分。氣泡W持續 地成長舆合併,同時也擠壓並切斷此液柱74, 了 J噴孔流道52脫離’而形成一液滴朝向目標物嘖出液:: 7氣泡70a即會裂解’而向下形成一液 『第4D圖』中所示)。 1狀心(如 在經過短暫的時間後,於矽基材1〇中另— 熱片30隨即啟動,開始加熱產生氣泡7〇b。第弟1加 之電極持續對輔助液室42中之液體加熱,而氣泡7〇^ = 3〇 :地由輔助液室42朝喷液室40的方向成&,將 也不+ 液室40中予以補充,如『第4E圖』中所示,者 j至贺 滿液體之後’即可進行下一次噴液,第一加:片貝以。補 熱產生氣泡。於噴液過程中,請參閱『第4F =度加 液體由液體進口20重新充填至辅助液室42, 。卩为, 70战一次喷Page 12 519518 V. Description of the invention (10) "-It can increase the density of the spray liquid. π For the principle of micro-spray generation with rapid liquid backfilling mechanism of the present invention, please refer to the section "Fig. 4 Α ~ 4 β". The funnel-shaped liquid inlet 20, the liquid spraying chamber 40 and the auxiliary liquid chamber 42 are filled with liquid when the micro-spraying liquid is generated. The electrode on the first heating sheet 28 then starts heating n to generate a 1-shaped bubble 70a. Then, a fine liquid column 74 passes through the hole 48 and is pushed out through the orifice flow channel 52. At this stage, the second heating plate 30 in the position assistant liquid chamber 42 has not started to be heated. Then, the electrode of the heating plate 28 continues to add liquid to the liquid in the spraying chamber 40, and it continuously becomes a county at 70 a, & Furthermore, the liquid column 74 is further pushed out of the nozzle hole flow channel 52 as shown in "Figs. 4B and 4C". After ^^ Please refer to the section “Figures 4C and 4D”. The bubble W continues to grow and merge, and at the same time squeezes and cuts off the liquid column 74, and the J nozzle hole flow channel 52 is disengaged to form a droplet toward the target. The liquid is discharged: 7 The bubble 70a will crack and the A liquid is formed downward as shown in "Figure 4D"). 1-shaped heart (such as after a short period of time, in the silicon substrate 10 another-the hot sheet 30 is immediately started to start heating to generate bubbles 70b. The first brother 1 plus the electrode continues to heat the liquid in the auxiliary liquid chamber 42 And the bubble 7〇 ^ = 30: the ground from the auxiliary liquid chamber 42 toward the liquid ejection chamber 40 becomes & and will also be supplemented in the + liquid chamber 40, as shown in "Fig. 4E", or j After the liquid is full, you can start the next liquid spray. The first addition: tablets. The heat is added to generate air bubbles. During the liquid spraying process, please refer to "4F = Degree of liquid refilled from the liquid inlet 20 to the auxiliary liquid. Room 42, ... for the 70 battle one spray
^518^ 518
、發明說明(11) 液循環。 【發明之功效】 產生種!巧體快速回填機制之微型喷液 噴Wg 衣L ' ”可解決傳統微型噴液產生器(如 噴墨印表機等)墨水回填速 =:二 1 度問通所以本發明具有下列功效: ,^ 貝欣座生态中增加一輔助液室及一輔助 二夜i率利用此方式來加快液體回填速度,藉以提昇 2. ί::::次鎳技術2作此微型 強化其結構。锖崔控制其各部之尺寸外,還可2. Description of the invention (11) Liquid circulation. [Effects of invention] Seed production! The micro-jet spray Wg clothing L '”of the quick-filling mechanism of the smart body can solve the ink back-filling speed of the traditional micro-jet generator (such as an inkjet printer, etc.) =: 2 1 degree, so the present invention has the following effects:, ^ Adding an auxiliary liquid chamber and an auxiliary two-night i-rate to the Bessin Ecology. This method is used to speed up the liquid backfilling speed, thereby improving 2. ί :::: subnickel technology 2 to make this micro-enhanced structure. 锖 Cui control In addition to the size of each part,
雖然本發明之輕伟每A 以限定本發明,任;;::露如上所;脫=並非用 精神和範圍内,當可;::關技藝者,在不;離本發明之 Π 圍視本說明書所附之申請專利範圍所界定者Although the lightness of the present invention defines each of the inventions, any ;; :: exposed as above; shed = not in the spirit and scope, when it can be :: off the artist, no; away from the Π of the present invention Defined by the scope of the patent application attached to this specification
第14頁 519518 圖式簡單說明 第1 A〜1 B圖係為本發明之整體剖面示意圖; 第2 A〜2 N圖係為本發明之製作流程剖面示意圖; 第3圖係為本發明第二實施例之剖面示意圖;及 第4 A〜4 F圖係為本發明之工作流程咅丨J面示意圖° 【圖式符號說明】Page 519518 Brief Description of Drawings Figures 1 A ~ 1 B are schematic cross-sectional views of the present invention; Figures 2 A ~ 2 N are schematic cross-sectional views of the manufacturing process of the present invention; Figure 3 is the second of the present invention. The schematic cross-sectional view of the embodiment; and the 4th to 4th F are the working process of the present invention.
第15頁 10 矽 基 材 12 上 表 面 14 下 表 面 16 第 一 絕 緣 層 18 第 二 絕 緣 層 20 液 體 進 π 28 第 一 加 数 片 30 第 二 加 熱 片 34a ,34b 電 導 線 36 保 護 層 38a ,38b 第 一 光 阻 層 40 喷 液 室 42 輔 助 液 室 46 金 屬 種 子 層 48 喷 孔 5 0a ,50b 第 二 光 阻 層 52 喷 孔 流 道 54 喷 孔 片 5 6a ,56b 喷 嘴 519518 圖式簡單說明 氣泡 液柱 70a , 70b 74 ΙΙΙΙΗΒΙΙΙ 第16頁Page 15 10 Silicon substrate 12 Upper surface 14 Lower surface 16 First insulating layer 18 Second insulating layer 20 Liquid inlet 28 First plus piece 30 Second heating piece 34a, 34b Electrical wire 36 Protective layer 38a, 38b A photoresist layer 40 liquid injection chamber 42 auxiliary liquid chamber 46 metal seed layer 48 nozzle holes 5 0a, 50b second photoresist layer 52 nozzle hole flow channel 54 nozzle plate 5 6a, 56b nozzle 519518 The diagram simply illustrates the bubble liquid column 70a, 70b 74 ΙΙΙΙΗΒΙΙΙ page 16
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US7284829B2 (en) | 2004-06-30 | 2007-10-23 | Industrial Technology Research Institute | Inkjet printhead and process for producing the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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US7284829B2 (en) | 2004-06-30 | 2007-10-23 | Industrial Technology Research Institute | Inkjet printhead and process for producing the same |
US7618120B2 (en) | 2004-06-30 | 2009-11-17 | Industrial Technology Research Institute | Inkjet printhead and process for producing the same |
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