US7240433B2 - Method of fabricating a thermal inkjet head having a symmetrical heater - Google Patents

Method of fabricating a thermal inkjet head having a symmetrical heater Download PDF

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US7240433B2
US7240433B2 US11/201,891 US20189105A US7240433B2 US 7240433 B2 US7240433 B2 US 7240433B2 US 20189105 A US20189105 A US 20189105A US 7240433 B2 US7240433 B2 US 7240433B2
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inkjet head
layer
fabricating
symmetrical
insulating material
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US20050282089A1 (en
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Chen-Kuei Chung
Chun-Jun Lin
Chung-Chu Chen
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Industrial Technology Research Institute ITRI
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1645Manufacturing processes thin film formation thin film formation by spincoating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14016Structure of bubble jet print heads
    • B41J2/14088Structure of heating means
    • B41J2/14112Resistive element
    • B41J2/14129Layer structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14016Structure of bubble jet print heads
    • B41J2/14145Structure of the manifold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1601Production of bubble jet print heads
    • B41J2/1603Production of bubble jet print heads of the front shooter type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1625Manufacturing processes electroforming
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1628Manufacturing processes etching dry etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1629Manufacturing processes etching wet etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1631Manufacturing processes photolithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1642Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1643Manufacturing processes thin film formation thin film formation by plating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128Assembling formed circuit to base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
    • Y10T29/49135Assembling to base an electrical component, e.g., capacitor, etc. with component orienting and shaping, e.g., cutting or bending, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147Assembling terminal to base
    • Y10T29/49151Assembling terminal to base by deforming or shaping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147Assembling terminal to base
    • Y10T29/49151Assembling terminal to base by deforming or shaping
    • Y10T29/49153Assembling terminal to base by deforming or shaping with shaping or forcing terminal into base aperture
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49401Fluid pattern dispersing device making, e.g., ink jet

Definitions

  • the present invention generally relates to an integrated micro-droplet generator and more particularly, relates to a thermal bubble type inkjet head that is equipped with a symmetrical, off-shooter heater and a method for fabricating the head.
  • inkjet printing mechanisms include the piezoelectric type, the electrostatic type and the thermal bubble type, etc. After the first thermal inkjet printer becomes commercially available in the early 1980's, there has been a great progress in the development of inkjet printing technology.
  • a liquid droplet injector is used as one of the key mechanisms.
  • the availability of a liquid droplet injector capable of supplying high-quality droplets at high-frequency and high-spacial resolution is critical.
  • thermal inkjet system also known as thermal bubble inkjet system, thermally driven bubble system or as bubble jet system utilizes bubble to eject ink droplets out of an ink supply chamber
  • piezoelectric printers utilize piezoelectric actuators to pump ink out from a reservoir chamber.
  • the principle of operation for a thermal bubble inkjet system is that an electrical current is first used to heat an electrode to boil liquid in an ink reservoir chamber. When the liquid is in a boiling state, bubble forms in the liquid and expands and thus functioning as a pump to eject a fixed quantity of liquid from the reservoir chamber through an orifice and then forms into droplets. When the electrical current is turned-off, the bubble generated collapses and liquid refills the chamber by capillary force.
  • a thermal bubble inkjet head that is equipped with a symmetrical heater and a method for fabricating such head are disclosed.
  • a method for fabricating a thermal bubble inkjet head that is equipped with off-shooter heaters which includes the operating steps of providing a silicon substrate that has a top surface and a bottom surface; forming a first and a second insulating material layer of at least 1000 ⁇ thick on the top and bottom surfaces; reactive ion etching an opening for a manifold in the second insulating material layer on the bottom surface; wet etching a funnel-shaped manifold in the silicon substrate; forming a symmetrical ring-shaped heater on the first insulating material layer on the top surface; depositing and patterning an interconnect with a conductive metal in electrical communication with the ring-shaped heater; depositing a third insulating material layer on top of the ring-shaped heater and the first insulating material layer; spin-coating a first photoresist layer of at least 2000 ⁇ thick on top of the third insulating material layer; patterning by UV exposure an ink chamber in fluid communication with said manifold
  • the method for fabricating a thermal bubble inkjet head may further include the step of forming the first and second insulating material layers with either SiO 2 or Si 3 N 4 , or the step of wet etching a funnel-shaped manifold in the silicon substrate by KOH, or the step of forming the ring-shaped heater with TaAl, or the step of depositing the third insulating material layer of Si 3 N 4 or SiC.
  • the method may further include the step of spin-coating a first photoresist layer preferably of at least 5000 ⁇ thick, or the step of depositing the metal seed layer of Cr and Ni, or the step of stripping away the second photoresist layer by a wet etching method, or the step of stripping away the first photoresist layer from the ink chamber by a wet etching technique, or the step of patterning the inkjet orifice in the metal seed layer adjacent to said ring-shaped heater.
  • the present invention is further directed to a thermal bubble inkjet head that is equipped with symmetrical heaters which includes a silicon substrate that has a top surface and a bottom surface; a first and a second insulating material layer of at least 1000 ⁇ thick on the top and bottom surfaces; a funnel-shaped manifold formed in the second insulating material layer and the silicon substrate; a symmetrical ring-shaped heater formed on the first insulating material layer on the top surface; an interconnect formed of a conductive metal in electrical communication with the ring-shaped heater; a third insulating material layer on top of the ring-shaped heater and the first insulating material layer; a first photoresist layer of at least 2000 ⁇ thick on top of the third insulating material layer; an ink chamber formed in the first photoresist layer in fluid communication with the funnel-shaped manifold; a metal seed layer on top of the first photoresist layer and an inkjet orifice formed in the metal seed layer; and a Ni layer on top of the metal seed layer
  • the first photorcsist layer preferably has a thickness of at least 5000 ⁇ , the inkjet orifice is formed in close proximity to the ring-shaped heater; the first and second insulating material layers may be a SiO 2 layer or a Si 3 N 4 layer.
  • the ring-shaped heater may be formed of TaAl, the metal seed layer may be deposited of Cr or Ni.
  • the ring-shaped heater may be positioned in the ink chamber.
  • the inkjet orifice may be formed in the ink chamber opposite to the ring-shaped heater.
  • the inkjet head may be a monolithic head.
  • FIG. 1A is an enlarged, cross-sectional view of a present invention silicon substrate coated with an insulating material layer on a top surface and a bottom surface.
  • FIG. 1B is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1A with an opening dry etched in the bottom insulating layer and a funnel-shaped manifold wet etched in the silicon substrate.
  • FIG. 1C is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1B with a metal layer deposited on top and then formed into an interconnect.
  • FIG. 1D is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1C with a heater connected to an interconnect.
  • FIG. 1E is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1D with a passivation layer deposited on top of the substrate.
  • FIG. 1F is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1E with a thick photoresist layer deposited on top.
  • FIG. 1G is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1F with a pattern formed in the photoresist layer by UV exposure.
  • FIG. 1H is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1G with a metal seed layer deposited and patterned for the inkjet orifice on top.
  • FIG. 1H is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1H with a second thick photoresist layer spin-coated on top and patterned.
  • FIG. 1J is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1I with the second photoresist layer developed.
  • FIG. 1K is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1J with an orifice plate electroplated on top.
  • FIG. 1L is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1K with the remaining second photoresist layer stripped to form the orifice.
  • FIG. 1M is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1L with the bottom insulating layer and the top insulating layer and the passivation layer stripped by dry etching.
  • FIG. 1N is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1M with the first photoresist layer stripped to form the ink chamber.
  • FIG. 2A is an enlarged, cross-sectional view of the present invention inkjet head illustrating its first operating step wherein a ring-shaped bubble is generated by the ring-shaped heater.
  • FIG. 2B is an enlarged, cross-sectional view of the present invention inkjet head illustrating the second step of operation wherein the ring-shaped bubble is enlarged to push out an ink column.
  • FIG. 2C is an enlarged, cross-sectional view of the present invention inkjet head illustrating the third operating step in which the bubble is further enlarged to push out the ink column.
  • FIG. 2D is an enlarged, cross-sectional view of the present invention inkjet head illustrating the fourth operating step in which a circular bubble is generated to dislodge the ink column.
  • FIG. 2E is an enlarged, cross-sectional view of the present invention inkjet head illustrating the circular bubble is collapsed.
  • FIG. 3 is a third embodiment of the present invention thermal bubble inkjet head equipped with two inkjet orifices for two symmetrial, off-shooter heaters.
  • the present invention discloses a thermal bubble inkjet head that is equipped with a symmetrical heater.
  • the present invention further discloses a method for fabricating such a thermal bubble inkjet head.
  • the present invention method two separate thick photoresist deposition processes by spin-coating and a nickel electroplating process are required for achieving the final structure.
  • the first thick photoresist spin-coating process is used for forming an ink chamber.
  • the second thick photoresist spin-coating process is used to form a mold layer for forming an inkjet orifice.
  • the nickel electroplating process is used to form a top plate on the inkjet head through which the injector orifice is formed. None of these novel processing steps is used in conventional inkjet head formation methods.
  • the present invention thermal bubble inkjet head has a construction of the monolithic type formed on a silicon single crystal substrate.
  • a ring-shaped heater electrode is formed in a symmetrical manner for superior liquid droplet generation.
  • the ring-shaped heater electrode is further formed with a high directional perpendicularity.
  • the present invention symmetrically constructed ring-shaped heater electrode With the present invention symmetrically constructed ring-shaped heater electrode, the conventional problems of satellite droplets and interferences between adjacent orifices and flow channels can be minimized.
  • the benefits and advantages described above are achieved by the present invention symmetrically arranged heater electrode is formed either in an off-shooter arrangement or in a back-shooter arrangement. An off-shooter arrangement process flow is described below, while the process flow for a back-shooter arrangement can be similarly executed with minor modifications.
  • the term “off-shooter” means the position of the heater off-shifted the position of the nozzle from the normal direction.
  • a silicon substrate 10 used for constructing the present invention inkjet head is shown.
  • insulating material layers 16 and 18 are then deposited by a low pressure chemical vapor deposition method insulating material layers 16 and 18 , respectively.
  • the insulating material layers 16 , 18 can be formed of either SiO 2 or Si 3 N 4 to a thickness between about 1000 ⁇ , and preferably to about 2000 ⁇ .
  • a P-type 101 mm diameter silicon wafer that has a crystal orientation of (100) is utilized.
  • a RCA cleaning procedure is first used to clean the wafer prior to processing.
  • the SiO 2 layer may also be formed by a wet oxidation method in a furnace tube to a thickness larger than 1 ⁇ m.
  • a first mask is then used, as shown in FIG. 1B , in a photolithographic process to define the position of manifold 20 and forming the manifold 20 by first dry etching the SiO 2 layer 18 by a reactive ion etching technique, and then etching the silicon layer 22 by a wet etching utilizing KOH solution. The process is completed by rinsing the wafer with DI (deionized) water.
  • a second mask is first used in a photolithographic process to define the locations of an interconnect 34 .
  • a metal layer such as Al or Cu is first evaporated on top of the insulating material layer 16 and patterned into the interconnect 34 .
  • the process is again completed with a DI water rinsing of the silicon wafers.
  • a symmetrical ring-shaped heater electrode 28 is then formed on top of the interconnect 34 by first depositing a metal layer such as TaAl alloy and then photolithographically patterning the metal layer. A third photomask is used for the heater electrode forming process shown in FIG. 1D .
  • an insulating material layer, or a passivation layer 36 is deposited on top of the silicon substrate 10 to provide insulation to the various structures of the interconnection 34 and the heater electrode 28 .
  • the passivation layer 36 is a protection layer which can be deposited of a material selected from Si 3 N 4 , SiC and SiO 2 by a plasma enhanced chemical vapor deposition technique. This is shown in FIG. 1E .
  • the present invention novel method continues by the advantageous deposition step, shown in FIG. 1F , of a first thick photoresist layer 38 on top of the silicon substrate 10 .
  • the photoresist layer 38 should have a thickness of at least 20 ⁇ m, and preferably 25–35 ⁇ m deposited by a spin-coating technique and then baked for drying.
  • An exposure process utilizing UV radiation shown in FIG. 1G , follows by using a fourth photomask to define the size and location of the ink chamber 40 .
  • a developing step is not executed at this stage such that all the photoresist layers 38 , either the exposed portion 44 or the unexposed portion 38 , stays on top of the silicon substrate 10 . This is a critical step of the present invention and must be patterned with great accuracy such that the positions of the ink chamber 40 can be determined.
  • a metal seed layer 46 is deposited on top of the photoresist layer 38 , 44 and patterned to define an ejection orifice 48 in the metal seed layer.
  • the metal seed layer may be deposited of a Cr/Ni alloy by sputtering or evaporation and used as a seed layer for a subsequent electroplating process.
  • a fifth photomask is used in a photolithography process to define the size and location of the ejection orifice 48 .
  • the ejection orifice 48 is formed by a wet etching technique followed by a process for removing the photoresist layer used in the lithography process.
  • the present invention novel method is followed, as shown in FIG. 1I , by a second thick photoresist layer 50 deposition process.
  • the deposition can be carried out by a spin-coating technique and then the photoresist layer 50 is patterned for the ink passageway 72 .
  • the process is then followed by a photoresist developing process, during which the photoresist layer 50 is removed except at the ink passageway 72 , which stays on top of the ejection orifice 48 . This is shown in FIG. 1J .
  • An orifice plate 54 is then formed by a nickel electroplating process, as shown in FIG. 1K .
  • the residual, second thick photoresist layer 50 in the ink passageway 72 is then removed to form the injection passage in fluid communication with the ink chamber 40 , as shown in FIG. 1L .
  • the photoresist removal process is performed by a wet etching technique.
  • the backside of the silicon substrate 10 is then etched by a reactive ion etching technique to remove the bottom insulating material layer 18 , as shown in FIG. 1M , and the top insulating material layer 16 exposed in the manifold 20 .
  • the first thick photoresist layer 38 is removed by a developing solution to vacate the ink chamber 40 in fluid communication with the manifold 20 and the ink passageway 72 .
  • the present invention novel thermal bubble inkjet head that is equipped with symmetrical heaters is thus completed.
  • FIGS. 2 A.–. 2 E The operation of the present invention thermal bubble inkjet head having an off-shooter arrangement is shown in FIGS. 2 A.–. 2 E.
  • the funnel-shaped manifold 20 and the ink chamber 40 are filled with an ink material.
  • the ring-shaped heater electrode 28 is then heated to produce a ring-shaped bubble 70 .
  • a small ink column 74 is pushed out of the ink passageway 72 through the orifice 48 .
  • the bubble 70 enlarges, as shown in FIGS. 2B and 2C , to further push the ink column 74 out of the ink passageway 72 , as the heater electrode 28 continuously heats the ink contained in the ink chamber 40 .
  • the ring-shaped bubble 70 forms a circular bubble 76 and thus, cutting off the ink droplet 74 completely from the ink contained in the ink chamber 40 .
  • the ink droplet 74 separates from the inkjet passageway 72 and forms an ink droplet toward the target.
  • the bubble 76 collapses forming a void (not shown).
  • thermal bubble inkjet head 64 which has a different construction of the heater electrodes 66 and 68 .
  • the present invention novel thermal bubble inkjet head equipped with symmetrical heaters and a method for fabricating the head have therefore been amply described in the above description and in the appended drawings of FIGS. 1A–3E .

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Abstract

A method for fabricating a thermal inkjet head equipped with a symmetrical heater and the head fabricated by the method are provided. The method incorporates two thick photoresist deposition processes and a nickel electroplating process. The first thick photoresist deposition process is carried out to form an ink chamber in fluid communication with a funnel-shaped manifold and an injector orifice. The second thick photoresist deposition process forms a mold for forming an injector passageway that leads to the injector orifice. The nickel electroplating process provides an orifice plate on top of the inkjet head through which an injector passageway that leads to the injector orifice is provided for injecting ink droplets.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a divisional of U.S. application Ser. No. 10/057,025 filed Jan. 24, 2002, now U.S. Pat. No. 6,942,320 the entire disclosure of which is incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to an integrated micro-droplet generator and more particularly, relates to a thermal bubble type inkjet head that is equipped with a symmetrical, off-shooter heater and a method for fabricating the head.
2. Background
Since the advent of printers, and specifically for low cost printers for personal computers, a variety of inkjet printing mechanisms have been developed and utilized in the industry. These inkjet printing mechanisms include the piezoelectric type, the electrostatic type and the thermal bubble type, etc. After the first thermal inkjet printer becomes commercially available in the early 1980's, there has been a great progress in the development of inkjet printing technology.
In an inkjet printer, a liquid droplet injector is used as one of the key mechanisms. To provide a high-quality and reliable inkjet printer, the availability of a liquid droplet injector capable of supplying high-quality droplets at high-frequency and high-spacial resolution is critical.
Presently, there are two types of inkjet printers that are available in the market, the piezoelectric type and the thermal type. The thermal inkjet system, also known as thermal bubble inkjet system, thermally driven bubble system or as bubble jet system utilizes bubble to eject ink droplets out of an ink supply chamber, while piezoelectric printers utilize piezoelectric actuators to pump ink out from a reservoir chamber. The principle of operation for a thermal bubble inkjet system is that an electrical current is first used to heat an electrode to boil liquid in an ink reservoir chamber. When the liquid is in a boiling state, bubble forms in the liquid and expands and thus functioning as a pump to eject a fixed quantity of liquid from the reservoir chamber through an orifice and then forms into droplets. When the electrical current is turned-off, the bubble generated collapses and liquid refills the chamber by capillary force.
When evaluating the performance of a thermal bubble inkjet system, factors such as droplet ejection frequency, cross talk between adjacent chambers and the generation of satellite droplets are considered. Two of these performance requirements, i.e. the satellite droplets, which degrade the sharpness of the image produced and the cross talk between adjacent chambers and flow channels which decrease the quality and reliability of the inkjet system are frequently encountered. In order to improve the performance of a thermal bubble inkjet system, these drawbacks must be corrected.
It is therefore an object of the present invention to provide a thermal bubble inkjet head that does not have the drawbacks or the shortcomings of the conventional thermal bubble inkjet head.
It is another object of the present invention to provide a thermal bubble inkjet head that is equipped with a symmetrical ring-shaped heater for generating bubbles.
It is another further object of the present invention to provide a thermal bubble inkjet head that is equipped with an ink chamber.
It is yet another object of the present invention to provide a method for fabricating a thermal bubble inkjet head that is equipped with a symmetrical heater.
It is still another further object of the present invention to provide a method for fabricating a thermal bubble inkjet head that is equipped with a symmetrical heater by utilizing two separate thick photoresist deposition processes and a nickel electroplating process.
BRIEF SUMMARY OF THE INVENTION
In accordance with the present invention, a thermal bubble inkjet head that is equipped with a symmetrical heater and a method for fabricating such head are disclosed.
In a preferred embodiment, a method for fabricating a thermal bubble inkjet head that is equipped with off-shooter heaters is provided which includes the operating steps of providing a silicon substrate that has a top surface and a bottom surface; forming a first and a second insulating material layer of at least 1000 Å thick on the top and bottom surfaces; reactive ion etching an opening for a manifold in the second insulating material layer on the bottom surface; wet etching a funnel-shaped manifold in the silicon substrate; forming a symmetrical ring-shaped heater on the first insulating material layer on the top surface; depositing and patterning an interconnect with a conductive metal in electrical communication with the ring-shaped heater; depositing a third insulating material layer on top of the ring-shaped heater and the first insulating material layer; spin-coating a first photoresist layer of at least 2000 Å thick on top of the third insulating material layer; patterning by UV exposure an ink chamber in fluid communication with said manifold; depositing a metal seed layer on the first photoresist layer and patterning an inkjet orifice in the metal seed layer; spin-coating a second photoresist layer of at least 2000 Å thick on the metal seed layer and patterning the inkjet orifice; removing the developed second photoresist layer except on top of the inkjet orifice; electroplating nickel on top of the metal seed layer encapsulating the second photoresist layer on top of the inkjet orifice; stripping away the second photoresist layer on top of the inkjet orifice; reactive ion etching away the second insulating material layer on the bottom surface of the silicon substrate and the first insulating material layer exposed in the manifold; and stripping away the first photoresist layer from the ink chamber.
The method for fabricating a thermal bubble inkjet head may further include the step of forming the first and second insulating material layers with either SiO2 or Si3N4, or the step of wet etching a funnel-shaped manifold in the silicon substrate by KOH, or the step of forming the ring-shaped heater with TaAl, or the step of depositing the third insulating material layer of Si3N4 or SiC. The method may further include the step of spin-coating a first photoresist layer preferably of at least 5000 Å thick, or the step of depositing the metal seed layer of Cr and Ni, or the step of stripping away the second photoresist layer by a wet etching method, or the step of stripping away the first photoresist layer from the ink chamber by a wet etching technique, or the step of patterning the inkjet orifice in the metal seed layer adjacent to said ring-shaped heater.
The present invention is further directed to a thermal bubble inkjet head that is equipped with symmetrical heaters which includes a silicon substrate that has a top surface and a bottom surface; a first and a second insulating material layer of at least 1000 Å thick on the top and bottom surfaces; a funnel-shaped manifold formed in the second insulating material layer and the silicon substrate; a symmetrical ring-shaped heater formed on the first insulating material layer on the top surface; an interconnect formed of a conductive metal in electrical communication with the ring-shaped heater; a third insulating material layer on top of the ring-shaped heater and the first insulating material layer; a first photoresist layer of at least 2000 Å thick on top of the third insulating material layer; an ink chamber formed in the first photoresist layer in fluid communication with the funnel-shaped manifold; a metal seed layer on top of the first photoresist layer and an inkjet orifice formed in the metal seed layer; and a Ni layer on top of the metal seed layer with an aperture formed therein in fluid communication with the inkjet orifice.
In the thermal bubble inkjet head that is equipped with a symmetrical heater, the first photorcsist layer preferably has a thickness of at least 5000 Å, the inkjet orifice is formed in close proximity to the ring-shaped heater; the first and second insulating material layers may be a SiO2 layer or a Si3N4 layer. The ring-shaped heater may be formed of TaAl, the metal seed layer may be deposited of Cr or Ni. The ring-shaped heater may be positioned in the ink chamber. The inkjet orifice may be formed in the ink chamber opposite to the ring-shaped heater. The inkjet head may be a monolithic head.
BRIEF DESCRIPTION OF THE DRAWINGS
These and other objects, features and advantages of the present invention will become apparent from the following detailed description and the appended drawings in which:
FIG. 1A is an enlarged, cross-sectional view of a present invention silicon substrate coated with an insulating material layer on a top surface and a bottom surface.
FIG. 1B is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1A with an opening dry etched in the bottom insulating layer and a funnel-shaped manifold wet etched in the silicon substrate.
FIG. 1C is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1B with a metal layer deposited on top and then formed into an interconnect.
FIG. 1D is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1C with a heater connected to an interconnect.
FIG. 1E is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1D with a passivation layer deposited on top of the substrate.
FIG. 1F is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1E with a thick photoresist layer deposited on top.
FIG. 1G is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1F with a pattern formed in the photoresist layer by UV exposure.
FIG. 1H is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1G with a metal seed layer deposited and patterned for the inkjet orifice on top.
FIG. 1H is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1H with a second thick photoresist layer spin-coated on top and patterned.
FIG. 1J is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1I with the second photoresist layer developed.
FIG. 1K is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1J with an orifice plate electroplated on top.
FIG. 1L is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1K with the remaining second photoresist layer stripped to form the orifice.
FIG. 1M is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1L with the bottom insulating layer and the top insulating layer and the passivation layer stripped by dry etching.
FIG. 1N is an enlarged, cross-sectional view of the present invention silicon substrate of FIG. 1M with the first photoresist layer stripped to form the ink chamber.
FIG. 2A is an enlarged, cross-sectional view of the present invention inkjet head illustrating its first operating step wherein a ring-shaped bubble is generated by the ring-shaped heater.
FIG. 2B is an enlarged, cross-sectional view of the present invention inkjet head illustrating the second step of operation wherein the ring-shaped bubble is enlarged to push out an ink column.
FIG. 2C is an enlarged, cross-sectional view of the present invention inkjet head illustrating the third operating step in which the bubble is further enlarged to push out the ink column.
FIG. 2D is an enlarged, cross-sectional view of the present invention inkjet head illustrating the fourth operating step in which a circular bubble is generated to dislodge the ink column.
FIG. 2E is an enlarged, cross-sectional view of the present invention inkjet head illustrating the circular bubble is collapsed.
FIG. 3 is a third embodiment of the present invention thermal bubble inkjet head equipped with two inkjet orifices for two symmetrial, off-shooter heaters.
DETAILED DESCRIPTION OF THE PREFERRED AND ALTERNATE EMBODIMENTS
The present invention discloses a thermal bubble inkjet head that is equipped with a symmetrical heater. The present invention further discloses a method for fabricating such a thermal bubble inkjet head.
In the present invention method, two separate thick photoresist deposition processes by spin-coating and a nickel electroplating process are required for achieving the final structure. The first thick photoresist spin-coating process is used for forming an ink chamber. The second thick photoresist spin-coating process is used to form a mold layer for forming an inkjet orifice. The nickel electroplating process is used to form a top plate on the inkjet head through which the injector orifice is formed. None of these novel processing steps is used in conventional inkjet head formation methods.
The present invention thermal bubble inkjet head has a construction of the monolithic type formed on a silicon single crystal substrate. A ring-shaped heater electrode is formed in a symmetrical manner for superior liquid droplet generation. The ring-shaped heater electrode is further formed with a high directional perpendicularity. With the present invention symmetrically constructed ring-shaped heater electrode, the conventional problems of satellite droplets and interferences between adjacent orifices and flow channels can be minimized. The benefits and advantages described above are achieved by the present invention symmetrically arranged heater electrode is formed either in an off-shooter arrangement or in a back-shooter arrangement. An off-shooter arrangement process flow is described below, while the process flow for a back-shooter arrangement can be similarly executed with minor modifications. The term “off-shooter” means the position of the heater off-shifted the position of the nozzle from the normal direction.
Referring initially to FIG. 1A, wherein a silicon substrate 10 used for constructing the present invention inkjet head is shown. On a top surface 12 of the silicon substrate, and on a bottom surface 14 of the same, are then deposited by a low pressure chemical vapor deposition method insulating material layers 16 and 18, respectively. The insulating material layers 16,18 can be formed of either SiO2 or Si3N4 to a thickness between about 1000 Å, and preferably to about 2000 Å. In the preferred embodiment, a P-type 101 mm diameter silicon wafer that has a crystal orientation of (100) is utilized. A RCA cleaning procedure is first used to clean the wafer prior to processing. The SiO2 layer may also be formed by a wet oxidation method in a furnace tube to a thickness larger than 1 μm.
A first mask is then used, as shown in FIG. 1B, in a photolithographic process to define the position of manifold 20 and forming the manifold 20 by first dry etching the SiO2 layer 18 by a reactive ion etching technique, and then etching the silicon layer 22 by a wet etching utilizing KOH solution. The process is completed by rinsing the wafer with DI (deionized) water.
In the next step of the process, shown in FIG. 1C, a second mask is first used in a photolithographic process to define the locations of an interconnect 34. A metal layer such as Al or Cu is first evaporated on top of the insulating material layer 16 and patterned into the interconnect 34. The process is again completed with a DI water rinsing of the silicon wafers.
A symmetrical ring-shaped heater electrode 28 is then formed on top of the interconnect 34 by first depositing a metal layer such as TaAl alloy and then photolithographically patterning the metal layer. A third photomask is used for the heater electrode forming process shown in FIG. 1D. Following the heater electrode forming process, shown in FIG. 1E, an insulating material layer, or a passivation layer 36, is deposited on top of the silicon substrate 10 to provide insulation to the various structures of the interconnection 34 and the heater electrode 28. The passivation layer 36 is a protection layer which can be deposited of a material selected from Si3N4, SiC and SiO2 by a plasma enhanced chemical vapor deposition technique. This is shown in FIG. 1E.
The present invention novel method continues by the advantageous deposition step, shown in FIG. 1F, of a first thick photoresist layer 38 on top of the silicon substrate 10. The photoresist layer 38 should have a thickness of at least 20 μm, and preferably 25–35 μm deposited by a spin-coating technique and then baked for drying. An exposure process utilizing UV radiation, shown in FIG. 1G, follows by using a fourth photomask to define the size and location of the ink chamber 40. A developing step is not executed at this stage such that all the photoresist layers 38, either the exposed portion 44 or the unexposed portion 38, stays on top of the silicon substrate 10. This is a critical step of the present invention and must be patterned with great accuracy such that the positions of the ink chamber 40 can be determined.
In the next step of the process, shown in FIG. 1H, a metal seed layer 46 is deposited on top of the photoresist layer 38,44 and patterned to define an ejection orifice 48 in the metal seed layer. The metal seed layer may be deposited of a Cr/Ni alloy by sputtering or evaporation and used as a seed layer for a subsequent electroplating process. A fifth photomask is used in a photolithography process to define the size and location of the ejection orifice 48. The ejection orifice 48 is formed by a wet etching technique followed by a process for removing the photoresist layer used in the lithography process.
The present invention novel method is followed, as shown in FIG. 1I, by a second thick photoresist layer 50 deposition process. The deposition can be carried out by a spin-coating technique and then the photoresist layer 50 is patterned for the ink passageway 72. The process is then followed by a photoresist developing process, during which the photoresist layer 50 is removed except at the ink passageway 72, which stays on top of the ejection orifice 48. This is shown in FIG. 1J.
An orifice plate 54 is then formed by a nickel electroplating process, as shown in FIG. 1K. The residual, second thick photoresist layer 50 in the ink passageway 72 is then removed to form the injection passage in fluid communication with the ink chamber 40, as shown in FIG. 1L. The photoresist removal process is performed by a wet etching technique.
The backside of the silicon substrate 10 is then etched by a reactive ion etching technique to remove the bottom insulating material layer 18, as shown in FIG. 1M, and the top insulating material layer 16 exposed in the manifold 20.
In the final step of the process, as shown in FIG. 1N, the first thick photoresist layer 38 is removed by a developing solution to vacate the ink chamber 40 in fluid communication with the manifold 20 and the ink passageway 72. The present invention novel thermal bubble inkjet head that is equipped with symmetrical heaters is thus completed.
The operation of the present invention thermal bubble inkjet head having an off-shooter arrangement is shown in FIGS. 2A.–.2E. At the beginning of the process, the funnel-shaped manifold 20 and the ink chamber 40 are filled with an ink material. The ring-shaped heater electrode 28 is then heated to produce a ring-shaped bubble 70. As a result, a small ink column 74 is pushed out of the ink passageway 72 through the orifice 48. The bubble 70 enlarges, as shown in FIGS. 2B and 2C, to further push the ink column 74 out of the ink passageway 72, as the heater electrode 28 continuously heats the ink contained in the ink chamber 40.
Finally, as shown in FIGS. 2D and 2E, the ring-shaped bubble 70 forms a circular bubble 76 and thus, cutting off the ink droplet 74 completely from the ink contained in the ink chamber 40. As a result, the ink droplet 74 separates from the inkjet passageway 72 and forms an ink droplet toward the target. After the inkjet droplet 74 departs from the inkjet head 10, the bubble 76 collapses forming a void (not shown).
In a third preferred embodiment of the present invention, shown in FIG. 3, a present invention thermal bubble inkjet head 64 is provided which has a different construction of the heater electrodes 66 and 68.
The present invention novel thermal bubble inkjet head equipped with symmetrical heaters and a method for fabricating the head have therefore been amply described in the above description and in the appended drawings of FIGS. 1A–3E.
While the present invention has been described in an illustrative manner, it should be understood that the terminology used is intended to be in a nature of words of description rather than of limitation.
Furthermore, while the present invention has been described in terms of a preferred embodiment, it is to be appreciated that those skilled in the art will readily apply these teachings to other possible variations of the inventions.
The embodiment of the invention in which an exclusive property or privilege is claimed are defined as follows.

Claims (10)

1. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical off-shooter heater comprising:
providing a silicon substrate having a top surface and a bottom surface;
forming a first and a second insulating material layer of at least 1000 Å thick on said top and bottom surfaces;
reactive ion etching an opening for a manifold in said second insulating material layer on said bottom surface;
wet etching a funnel-shaped manifold in said silicon substrate;
forming a symmetrical ring-shaped heater on said first insulating material layer on said top surface;
depositing and patterning an interconnect with a conductive metal in electrical communication with said ring-shaped heater;
depositing a third insulating material layer on top of said ring-shaped heater and said first insulating material layer;
spin-coating a first photoresist layer of at least 2000 Å thick on top of said third insulating material layer;
patterning by UV exposure an ink chamber in said first photoresist layer;
depositing a metal seed layer on said first photoresist layer and patterning an inkjet orifice in said metal seed layer;
spin-coating a second photoresist layer of at least 2000 Å thick on said metal seed layer and patterning said inkjet orifice;
removing said developed second photoresist layer except on top of said inkjet orifice;
electroplating Ni on top of said metal seed layer encapsulating said second photoresist layer on top of said inkjet orifice;
stripping away said second photoresist layer on top of said inkjet orifice;
reactive ion etching away said second insulating material layer on said bottom surface of the silicon substrate and said first insulating material layer exposed in said manifold; and
stripping away said first photoresist layer from said ink chamber.
2. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
forming said first and second insulating material layers by either SiO2 or Si3N4.
3. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
wet etching a funnel-shaped manifold in said silicon substrate by KOH.
4. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
forming said symmetrical ring-shaped heater with TaAl.
5. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
depositing said third insulating material layer of Si3N4 or SiC.
6. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
spin-coating a first photoresist layer preferably of at least 5000 Å thick.
7. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
depositing said metal seed layer of Cr and Ni.
8. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
stripping away said second photoresist layer by a wet etching method.
9. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
stripping away said first photoresist layer from said chamber by a wet etching technique.
10. A method for fabricating a thermal bubble inkjet head equipped with a symmetrical heater according to claim 1 further comprising:
patterning said inkjet orifice in said metal seed layer adjacent to said ring-shaped heater.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070000785A1 (en) * 2003-07-19 2007-01-04 Xaar Technology Limited Method of manufacturing a component for droplet deposition apparatus
US20090193658A1 (en) * 2005-03-22 2009-08-06 Konica Minolta Holdings, Inc. Method of manufacturing substrates with feedthrough electrodes for inkjet heads and method of manufacturing inkjet heads

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7011392B2 (en) * 2002-01-24 2006-03-14 Industrial Technology Research Institute Integrated inkjet print head with rapid ink refill mechanism and off-shooter heater
KR100553912B1 (en) * 2003-12-22 2006-02-24 삼성전자주식회사 Inkjet printhead and method for manufacturing the same
KR100641359B1 (en) 2004-10-26 2006-11-01 삼성전자주식회사 Ink-jet print head with high efficiency heater and the fabricating method for the same
TWI254132B (en) * 2004-12-13 2006-05-01 Benq Corp Device and method of detecting openings
US20060198189A1 (en) * 2005-01-03 2006-09-07 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7473589B2 (en) 2005-12-09 2009-01-06 Macronix International Co., Ltd. Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US8482052B2 (en) 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
US7636257B2 (en) 2005-06-10 2009-12-22 Macronix International Co., Ltd. Methods of operating p-channel non-volatile memory devices
US7763927B2 (en) 2005-12-15 2010-07-27 Macronix International Co., Ltd. Non-volatile memory device having a nitride-oxide dielectric layer
US7907450B2 (en) 2006-05-08 2011-03-15 Macronix International Co., Ltd. Methods and apparatus for implementing bit-by-bit erase of a flash memory device
US7811890B2 (en) 2006-10-11 2010-10-12 Macronix International Co., Ltd. Vertical channel transistor structure and manufacturing method thereof
US8772858B2 (en) 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
US8208300B2 (en) * 2008-01-08 2012-06-26 Spansion Israel Ltd Non-volatile memory cell with injector
US9240405B2 (en) 2011-04-19 2016-01-19 Macronix International Co., Ltd. Memory with off-chip controller
CN110239218B (en) * 2019-07-08 2024-08-16 华天科技(昆山)电子有限公司 Chip packaging structure of ink-jet printing head and manufacturing method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863560A (en) * 1988-08-22 1989-09-05 Xerox Corp Fabrication of silicon structures by single side, multiple step etching process
US4914562A (en) 1986-06-10 1990-04-03 Seiko Epson Corporation Thermal jet recording apparatus
US4961821A (en) * 1989-11-22 1990-10-09 Xerox Corporation Ode through holes and butt edges without edge dicing
US5131978A (en) * 1990-06-07 1992-07-21 Xerox Corporation Low temperature, single side, multiple step etching process for fabrication of small and large structures
US5308442A (en) 1993-01-25 1994-05-03 Hewlett-Packard Company Anisotropically etched ink fill slots in silicon
US5608436A (en) * 1993-01-25 1997-03-04 Hewlett-Packard Company Inkjet printer printhead having equalized shelf length
US6155674A (en) 1997-03-04 2000-12-05 Hewlett-Packard Company Structure to effect adhesion between substrate and ink barrier in ink jet printhead
US6214245B1 (en) 1999-03-02 2001-04-10 Eastman Kodak Company Forming-ink jet nozzle plate layer on a base
US6267471B1 (en) 1999-10-26 2001-07-31 Hewlett-Packard Company High-efficiency polycrystalline silicon resistor system for use in a thermal inkjet printhead

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4914562A (en) 1986-06-10 1990-04-03 Seiko Epson Corporation Thermal jet recording apparatus
US4863560A (en) * 1988-08-22 1989-09-05 Xerox Corp Fabrication of silicon structures by single side, multiple step etching process
US4961821A (en) * 1989-11-22 1990-10-09 Xerox Corporation Ode through holes and butt edges without edge dicing
US5131978A (en) * 1990-06-07 1992-07-21 Xerox Corporation Low temperature, single side, multiple step etching process for fabrication of small and large structures
US5308442A (en) 1993-01-25 1994-05-03 Hewlett-Packard Company Anisotropically etched ink fill slots in silicon
US5608436A (en) * 1993-01-25 1997-03-04 Hewlett-Packard Company Inkjet printer printhead having equalized shelf length
US6155674A (en) 1997-03-04 2000-12-05 Hewlett-Packard Company Structure to effect adhesion between substrate and ink barrier in ink jet printhead
US6214245B1 (en) 1999-03-02 2001-04-10 Eastman Kodak Company Forming-ink jet nozzle plate layer on a base
US6267471B1 (en) 1999-10-26 2001-07-31 Hewlett-Packard Company High-efficiency polycrystalline silicon resistor system for use in a thermal inkjet printhead

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070000785A1 (en) * 2003-07-19 2007-01-04 Xaar Technology Limited Method of manufacturing a component for droplet deposition apparatus
US8042269B2 (en) * 2003-07-19 2011-10-25 Xaar Technology Limited Method of manufacturing a component for droplet deposition apparatus
US20090193658A1 (en) * 2005-03-22 2009-08-06 Konica Minolta Holdings, Inc. Method of manufacturing substrates with feedthrough electrodes for inkjet heads and method of manufacturing inkjet heads
US8028407B2 (en) * 2005-03-22 2011-10-04 Konica Minolta Holdings, Inc. Method of manufacturing substrates with feedthrough electrodes for inkjet heads and method of manufacturing inkjet heads

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