510922 A7 五、發明說明（/ ) 發明領域： 降低觀善減化學氣她積製程以 吹淨以減少日圓^^枝’制是_高溫之氮氣進行 甲咸乂日日圓表面之氮化石夕薄膜剝落之裝置和方法。 發明背景： 、、氮化奶邊）是—縣半導體製餘常見的介 料。它取主要的應用，是做為氧化石夕(Si〇2)層的餘刻^ (，0 ’並藉著氮切不碰氧所滲透的優點，這層幕 运可以做為進行氧化層（Field 〇xide)製作時，防止晶圓表 面的主動區域(Active Area)遭受氧化的幕罩層，這便 名的 L0C0S 製程(L0cai Oxidati〇n 〇f SiHc〇n)。除了這 個應用之外，因為氮化㈣驗金屬離子的防堵能力也报 好，且不易被水氣所參透，所以已廣泛的用在做為半導體 元件的保護層（PassivatiQn)上。也@為氮切有這兩種不 同的用途，在現在的半導體製程裡，便依其功能，而分別 利用低壓化學氣相沈積(LP⑽或是電聚輔助化學氣相沈 積(PECVD)的方式來沈積。 經濟部智慧財產局員工消費合作社印製 i 低廢化學氣減積的設計’就是將反贼體在反應器 内進行沈積反應時的操作壓力，調降到大約i T〇rr以下的 一種低壓化學氣相沈積反應裝置。藉著在低壓下進行反應 的特點，以低壓化學氣相沈積法來沈積的薄膜，將具備較 佳的階梯覆蓋能力。 請參閱圖一所示’爐管式低壓化學氣相沈積反應器1 是一種熱壁式(Hot Wall)的反應器，包括一外爐管u、内 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 510922 A7 Β7 五、發明說明（>) 爐管12 ' 一爐門13、一氮氣管路14 ' 一反應氣管路15以 及一五區加熱器16(Five Zone Heater)。該外爐管11係為 圓筒狀結構，包括一開口端112和一封閉端114;該内爐管 12 ’係為兩端開口之圓筒狀結構，包括第一端122和第二 端124,其中該内爐管12之第一端122係套入外爐管丨丨之 中且内爐管12與外爐管11形成一進氣道17和一抽氣道 18 ’该爐門13，係設於内爐管12之第二端124開口其上設 有一旋轉座132，沉積之晶圓3係利用石英晶舟2承載並置 於該旋轉座132上；談氮氣管路14係設於上述進氣道π 之中並輿氮氣源相連接（圖中未示）；該反應氣管路係設 於内爐官12之第二端124與爐門13之間，並提供晶圓3 在進行化學氣相沉積反應所需之氣體；以及一五區加熱器 16，係環繞於該外爐管n之外圍並對反應器丨進行加熱。 該内爐管12與外爐管11係利用經回火後的石英^構 成的，反應氣體係經由反應氣管路15進人反應器i内部， 並對晶圓3進行低壓化學氣相沈積，沉積反應後所剩下的 廢氣則經由抽氣道18排出。 ,3沈魏化__在高溫中執行以增加沈積 I 帛’當〜献積後喊管12内部仍在健之下，要將、、冗产 f 有氮化碎薄膜的晶圓3移出崎管12前，内爐f 12必^ | 組人乾淨紐塵的I纽妹吹淨(卿⑼)及破真空的、 |動作’以除去内爐管12中的危險氣體並加以平衡管ϋ壓 | 力方便取出晶圓3’傳統上注入的氮氣流量大多是高流旦510922 A7 V. Description of the invention (/) Field of invention: The process of reducing the quality of the atmosphere and reducing the chemical gas is reduced to reduce the yen ^^ sticks. Device and method. Background of the invention: (,, Nitrided milk edge) is a common medium for county semiconductor surplus. It is mainly used as the remaining time of the oxide layer (SiO2) ^ (, 0 ', and by virtue of nitrogen cutting without penetration by oxygen, this layer can be used as an oxide layer ( Field 〇xide), a mask layer that protects the active area on the wafer surface from oxidation. This is the L0C0S process (L0cai Oxidati〇n 〇f SiHc〇n). In addition to this application, because Nitride test metal ions also have good anti-blocking ability, and are not easily penetrated by water and gas, so they have been widely used as the protective layer of semiconductor elements (PassivatiQn). Also @ 为 nitro 切 There are two different In the current semiconductor manufacturing process, according to its function, low-pressure chemical vapor deposition (LP⑽ or electro-polymer-assisted chemical vapor deposition (PECVD)) is used for deposition. Employees ’Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs The design of printed i low-waste chemical gas depletion is a low-pressure chemical vapor deposition reaction device that reduces the operating pressure of the anti-thief body during the deposition reaction in the reactor to about i Torr. Reaction at low pressure Characteristics, the thin film deposited by the low pressure chemical vapor deposition method will have better step coverage ability. Please refer to Figure 1 'The furnace tube type low pressure chemical vapor deposition reactor 1 is a hot wall type (Hot Wall) Reactor, including an outer furnace tube u, inner paper size applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 510922 A7 Β7 V. Description of the invention (>) Furnace tube 12 'One furnace door 13. A nitrogen line 14 ', a reaction gas line 15, and a five zone heater 16. The outer furnace tube 11 is a cylindrical structure, including an open end 112 and a closed end 114; the The inner furnace tube 12 ′ is a cylindrical structure with two ends open, including a first end 122 and a second end 124, wherein the first end 122 of the inner furnace tube 12 is sleeved in and out of the outer furnace tube 丨 丨The furnace tube 12 and the outer furnace tube 11 form an air inlet 17 and an air extraction channel 18. The furnace door 13 is provided at the second end 124 of the inner furnace tube 12 and is provided with a rotating seat 132 for depositing wafers. The 3 series is carried by the quartz crystal boat 2 and placed on the rotating seat 132; the nitrogen pipeline 14 is arranged in the above-mentioned intake port π and uses nitrogen. The reaction gas pipeline is provided between the second end 124 of the inner furnace officer 12 and the furnace door 13 and provides the gas required for the chemical vapor deposition reaction of the wafer 3; and A five-zone heater 16 surrounds the periphery of the outer furnace tube n and heats the reactor. The inner furnace tube 12 and the outer furnace tube 11 are formed by using tempered quartz ^, a reaction gas system. It enters the inside of the reactor i through the reaction gas pipeline 15, and performs low-pressure chemical vapor deposition on the wafer 3. The exhaust gas remaining after the deposition reaction is exhausted through the exhaust channel 18. , 3 沈 魏 化 __ Performed at high temperature to increase the deposition I 帛 'When ~ the inside of the tube 12 is still healthy after the dedication, the wafer 3 with the nitrided thin film 3 is removed from the tube 12 Formerly, the inner furnace f 12 must be ^ | I cleaned the dust and cleaned the vacuum and cleaned the vacuum, and broke the vacuum. | Action 'to remove the dangerous gas in the inner furnace tube 12 and press the balance tube pressure | Force Easy to remove wafer 3 'Traditionally injected nitrogen flow is mostly high denier
I (>1 L/_) ’以縮減破真空的時間並減少反應器1待H ! 衣 I_ 3 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 八μ ^-----—— --ΊΙ.--：-----裝--- (請先I讀背面V注意事項再填寫本頁) 訂- 510922 五、發明說明（ 間、=提昇生產轉。但是由於氮氣管路14所提供之氮氣本 身/皿度較低’使原本溫度較高之内爐管12和外爐管η受 到局㈣，冷卻的效應而發生氣化石夕剝落或脆化現象，這 些極小的氮化石夕微塵會飄到晶圓3嚴重影響生產的良率。 雖然有人利用濕式的刷洗/沖洗方式來降低微塵，但刷洗 /冲洗方式會對氮切與氮财之下紐間產生應力，對 之後的微顯衫有著不良的效應，故並不是一個實用的解決 方式。 、為解決氮化矽剝落問題並提高產品良率，本發明提供 改善低壓化學氣相沉積製程以降低微粒產生之裝置和方 法，可以減少吹淨之氮氣溫度與爐管内部溫度之差異，以 減少晶圓a為氮切瓣所造成的污染問題。 發明目的： 本發明的主要目的在晶圓在進行低壓化學氣相沉積製 程反應時，提供高溫之氮氣以縮減氮氣與内爐管之溫度差 異，以期改善反應器在破真空的過程中因急速降溫造成氮 化矽剝落，進而提昇晶圓的品質及良率。 為了達到上述目的本發明之改善低壓化學氣相沉積製 程以降低微粒產生之裝置，係為一爐管式低壓化學氣相沉 積反應斋，適用於晶圓之低壓化學氣相沉積反應以形成氮 化石夕層，其中上述晶圓係置於石英晶舟之中，該反應器包 括一外爐管、一内爐管、一爐門、一氮氣管路、一反應氣 管路以及一五區加熱器。 該外爐管係為一圓筒狀結構，包括一開口端和一封閉 (請先閱t背面办注意事項再填寫本頁) 裝 tl---------嫵· 經濟部智慧財產局員工消費合作社印制农 A7 A7 經濟部智慧財產局員工消費合作社印製 --------- —___ 五、發明說明（) ^制爐管係為兩端開口之圓筒狀結構，包括第-端和 一爐管之第—端係套人外爐管之中助爐管與 =爐:之間形成-進氣道和—抽氣道；該爐門係設ς内爐 =之第一端開σ ’該爐門設有—旋轉座，晶舟係設於該旋 2座之上’魏氣管路具有前段和後段兩部分，前段位於 爐體内’後段位於爐體外並與氮氣源相連接，又後段之氣 氣管路表面裝設有帶狀加熱器，藉由帶狀加熱器加熱並對 反應=内部提供熱氣氣以進行吹淨和破真空之動作；該反 應氣管路係設於内爐管之第二端與爐門之間，並提供晶圓 化學氣相沉航應所需之氣體；該五區加無係環繞於該 外爐管之外圍並對反應器進行加熱。 當反應氣管路將低壓化學氣相沉積反應所需之氣體注 入反應器之中’並在晶關表面沉積—層氮切層，之後， 由氮氣官路將減氣注人内爐管之巾以進行吹淨及破真空 等步驟，最後再將晶圓由内爐管中取出。 一 本發明之改善健化學氣相_餘崎低微粒產生 之方法係在清潔及破真空時注入熱氮氣，其溫度與内濟管 内部之溫度相同（差異不大），因此可減少習知技術因為注 入溫度較«管低德氣錢献切姆，並且可以大 幅減少晶圓表面產生微粒污染的機率和提升晶圓之良率。 圖式簡單說明： 圖-係為習知技狀爐管式低壓化學氣相_反應器之示 意圖。 圖二係為本發明禮善低·學氣她積餘崎低微粒 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ϋ ·ϋ n n n I I ϋ I I ϋ I I n n n 一 n ϊ Β-ϋ m 1 n ϋ I (請先閱，讀背面々注意事項再填寫本頁) 510922 A7 B7 五、發明說明（f ) 產生之裝置之示意圖 圖式之圖號說明： 1〜爐管式低壓化學氣相沉積反應器 11〜外愤答 〇 112〜開口端 12〜内爐管 124〜第二端 132〜旋轉座 15〜反應氣管路 17〜進氣道 2〜石英晶舟 化學氣相沉積反應器 412〜開口端 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 π〜外爐管 114〜封閉端 122〜第一端 13〜爐門 14〜氦氣管路 16〜五區加熱器 18〜抽氣道 3〜晶圓 4〜爐管式低壓 41〜外爐管 414〜封閉端 422〜第一端 43〜爐門 44〜氦氣管路 442〜後段 46〜五區加熱器 48〜抽氣道 詳細說明： 請參閱圖二所示 42〜内爐管 424〜第二端 432〜旋轉座 441〜前段 45〜反應氣管路 47〜進氣道 5〜帶狀加熱器 • 本發明之改善低壓化學氣; 製程以降低微粒產生之裝置，係盔畴广 且係為一爐管式低壓化< 沉積反應器4，適用於低壓化璺备^ 士… 化予虱相沉積製程於晶園 297公釐） A7I (> 1 L / _) 'In order to reduce the time to break the vacuum and reduce the reactor 1 waiting for H! Clothing I_ 3 This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X eight μ ^ ---- -—— --ΊΙ .--: ----- install --- (please read the precautions on the back and fill in this page first) Order-510922 V. Description of the invention The nitrogen itself / plate temperature provided by the nitrogen pipeline 14 is lower, which causes the inner furnace tube 12 and the outer furnace tube η, which are originally higher in temperature, to be subjected to localization, and the effect of cooling causes the phenomenon of flaking or brittleness of the gasified stones. Nitride stone dust will float to wafer 3 and seriously affect the yield of production. Although some people use wet brushing / rinsing to reduce dust, the brushing / rinsing method will cause stress between the nitrogen cut and the nitrogen bond. It has a bad effect on the subsequent micro-display shirt, so it is not a practical solution. In order to solve the problem of silicon nitride peeling and improve product yield, the present invention provides an improved low-pressure chemical vapor deposition process to reduce the generation of particles. Apparatus and method for reducing temperature between blowing nitrogen and internal temperature of furnace tube The difference is to reduce the pollution problem caused by the nitrogen cutting flap of wafer a. Purpose of the invention: The main purpose of the present invention is to provide high temperature nitrogen to reduce the nitrogen and the inner furnace tube when the wafer is reacted in the low pressure chemical vapor deposition process. In order to improve the quality and yield of the wafer, the silicon nitride spalling caused by the rapid temperature drop during the process of breaking the vacuum in the reactor is improved. In order to achieve the above purpose, the present invention improves the low-pressure chemical vapor deposition process to reduce particles. The generated device is a furnace-tube low-pressure chemical vapor deposition reaction device, which is suitable for the low-pressure chemical vapor deposition reaction of wafers to form a nitride stone layer. The above-mentioned wafer is placed in a quartz crystal boat. The reactor includes an outer furnace tube, an inner furnace tube, a furnace door, a nitrogen pipeline, a reaction gas pipeline, and a five-zone heater. The outer furnace tube is a cylindrical structure including an open end and a Closed (please read the precautions on the back of t before filling out this page) Install tl --------- 妩 · Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperative Printed Farm A7 A7 Member of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives --------- —___ V. Description of the Invention () ^ The furnace tube system is a cylindrical structure with two ends open, including the first end and the first end of a furnace tube. Among the outer furnace tubes, the auxiliary furnace tube and = furnace are formed between -intake duct and -exhaust duct; the furnace door is provided with the first end of the inner furnace = σ 'the furnace door is provided with a rotating seat, The wafer boat is located on the two spinners. 'Wei gas pipeline has two parts, the front section and the rear section, the front section is located inside the furnace'. The rear section is located outside the furnace and is connected to the nitrogen source. The heater is heated by a band heater and provides hot gas to the inside of the reactor for blowing and breaking the vacuum. The reaction gas pipeline is located between the second end of the inner furnace tube and the furnace door, and The gas required for chemical vapor deposition of wafers is provided; the five zones plus and without coils surround the outer furnace tube and heat the reactor. When the reaction gas pipeline injects the gas required for the low-pressure chemical vapor deposition reaction into the reactor, and deposits a layer of nitrogen cutting on the surface of the crystal gate, the nitrogen gas is injected into the inner furnace tube by a nitrogen gas path to Blowing and vacuum breaking are performed, and finally the wafer is taken out of the inner furnace tube. A method for improving the healthy chemical vapor phase of the present invention _ Yu Qi low particle generation method is to inject hot nitrogen when cleaning and breaking vacuum, the temperature is the same as the temperature inside the internal tube (the difference is not large), so the conventional technology can be reduced. Because the injection temperature is lower than that of the tube, it can significantly reduce the chance of particle contamination on the wafer surface and improve the yield of the wafer. Brief description of the figure: Figure-is a schematic view of a conventional furnace tube type low pressure chemical vapor phase reactor. Figure 2 is the politeness of the present invention. She accumulates low particle size. 5 The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm). Ϋ · ϋ nnn II ϋ II ϋ II nnn a n Β Β-ϋ m 1 n ϋ I (please read it first, read the notes on the back, and then fill out this page) 510922 A7 B7 V. Description of the invention (f) Schematic diagram of the device The drawing number description: 1 ~ furnace tube Type Low Pressure Chemical Vapor Deposition Reactor 11 ~ Outside Analyzed 112 ~ Open End 12 ~ Inner Furnace Tube 124 ~ Second End 132 ~ Rotary Seat 15 ~ Reaction Gas Pipeline 17 ~ Inlet 2 ~ Quartz Crystal Boat Chemical Vapor Phase Deposition reactor 412 ~ Open end Printed by the Consumers ’Cooperative of the Ministry of Intellectual Property Bureau of Japan π ~ Outer furnace tube 114 ~ Closed end 122 ~ First end 13 ~ Furnace door 14 ~ Helium pipe 16 ~ Five zone heater 18 ~ Exhaust 3 ~ wafer 4 ~ furnace tube type low pressure 41 ~ outer furnace tube 414 ~ closed end 422 ~ first end 43 ~ furnace door 44 ~ helium gas line 442 ~ rear section 46 ~ five zone heater 48 ~ exhaust channel detailed description: please See Figure 2 for 42 ~ inner furnace tube 424 ~ second end 432 ~ rotating seat 441 ~ Front section 45 ~ Reaction gas line 47 ~ Intake port 5 ~ Belt heater • The improved low-pressure chemical gas of the present invention; a device for reducing particle generation in the process, which has a wide range of helmets and is a furnace tube type low pressure < deposition Reactor 4, suitable for low-pressure preparation ^…… to the lice phase deposition process in the crystal garden 297 mm) A7
五、發明說明（ 形成氮化矽層，該爐管式低壓化學氣相沉積反應器4包括一 外爐管41(〇uter Tube)、一内爐管42(Inner Tube)、一爐V. Description of the invention (to form a silicon nitride layer, the furnace tube type low pressure chemical vapor deposition reactor 4 includes an outer furnace tube 41 (〇uter Tube), an inner furnace tube 42 (Inner Tube), and a furnace
請 先 閱 讀· 背 面 之> 注 意 事 項 再· 填零 |裝 本 · 頁I 門43、一氮氣管路44、一反應氣管路45以及一五區加熱器 46 〇 該外爐管41係為一圓筒狀結構，包括一開口端412和一 封閉端414; 該内爐管42係為兩端開口之圓筒狀結構，包括第一端 422和第二端424，該内爐管42之第一端422係套入外爐管41 之中且内爐管42與外爐管41之間係形成一進氣道47和一抽 氣道48 ; 訂 該爐門43係設於内爐管42之第工端似開口，該爐門42 上設有一旋轉座432，石英晶舟2係設於該旋轉座432之上， 又該石英晶舟2上承載有複數個晶圓3 ; 該氮氣官路44包括前段441和後段442兩部分，其中前 $ f441係設於上述進氣道47之中，而後段桃係與氮氣源（圖 未不)相連接’且後段442表面裝設有帶狀加熱||5，利用 帶狀加熱對I氣管路44加熱以提供熱氮氣，並對反應器 進〇人淨和破真空的動作，其巾為了避免注入之熱氮 經濟部智慧財產局員工消費合作社印製 f溫度下降太快，魏氣管路44之前段應儘量靠近内爐管 42之第一端422 ; 該反應氣管路45係設於内爐管42之第工端似與爐門 3之間’並提供晶圓3化學氣相沉積反應所需之氣體·， 哭五區加熱益46係環繞於該外爐管41之外圍並對反應 盗4内部進行加熱。 本紙張尺度顧中國國家標準（CNS)Ar^i7^ x 297公釐） 510922 A7 發明說明（^ ) 該内爐管42與外爐管41係利用經回火後的石英所構 」反應氣體係經由反應氣管路45進入反應器4内部， i-lJi I j-----Awl i I (請先I讀背面」之注意事項再填寫本頁) 麻二曰a® 3财低壓化學氣概積，沉積反紐所剩下的 廢氣則經由抽氣道48抽出。 本發明之改善低壓化學氣她積製程崎低微粒產生 ^法二係在於當反應氣管路45將低壓化學氣相沉積反應 :之乳m反應器4之中，並在晶圓3的表面沉積一 鼠匕夕層之後’由氮氣管路45將熱氮氣注入内爐管42 ί中以進行吹淨及破真空等步驟，最後再將晶圓3由_ 官42中取出。 | 由於本發明之氮錄路44所注人之熱氮氣溫度鱼内 爐管42内部溫度之差異不Α，因此可減少氣化石夕在吹賴 皮真Γ之過私中’因為局部溫度的劇烈變化而造成氮化石夕 的剝落現象，故可獲得高品質的氮化_膜，進而提升晶 圓3之良率。 以上所述係利用較佳實施例詳細說明本發明，並非用 以限制本發__，任何熟知此技藝的人士根據本發明 而作些微的改變與調整，仍將不失本發明之要義所在，亦 經濟部智慧財產局員工消費合作社印製 不脫離本發明之精神和範圍，故都應視為本發明的進一步 實施狀況。 本紙張尺度綱巾目國家標準（CNS)A4規袼（21〇 X 297公髮了Please read · Back > Precautions · Fill in zeros | Install this page Page I Door 43, a nitrogen line 44, a reaction gas line 45, and a five-zone heater 46 〇 The outer furnace tube 41 is a circle A cylindrical structure including an open end 412 and a closed end 414; the inner furnace tube 42 is a cylindrical structure with two ends open, including a first end 422 and a second end 424, the first of the inner furnace tube 42 The end 422 is inserted into the outer furnace tube 41 and an air inlet 47 and an air extraction channel 48 are formed between the inner furnace tube 42 and the outer furnace tube 41. The furnace door 43 is arranged at the first of the inner furnace tube 42. The working end looks like an opening. The furnace door 42 is provided with a rotating seat 432, and the quartz crystal boat 2 is arranged on the rotating seat 432, and the quartz crystal boat 2 carries a plurality of wafers 3; the nitrogen official path 44 It includes two parts, the front section 441 and the rear section 442. The first $ 441 is located in the inlet 47, and the rear section is connected to the nitrogen source (not shown in the figure). | 5, use the strip heating to heat the I gas pipeline 44 to provide hot nitrogen, and enter the reactor to clean and break the vacuum. The temperature of the printed consumer's cooperative of the Intellectual Property Bureau of the Ministry of Economic Nitrogen Economy, the temperature of the printed f has fallen too quickly. The front section of the Wei gas pipeline 44 should be as close to the first end 422 of the inner furnace tube 42 as possible. The second end of 42 seems to be between the furnace door 3 and the gas required for the chemical vapor deposition reaction of the wafer 3. The heating zone 46 in the fifth zone surrounds the periphery of the outer furnace tube 41 and reacts to the reaction. The interior is heated. The dimensions of this paper are in accordance with Chinese National Standard (CNS) Ar ^ i7 ^ x 297 mm) 510922 A7 Description of the invention (^) The inner furnace tube 42 and the outer furnace tube 41 are made of tempered quartz "reaction gas system" Enter the reactor 4 through the reaction gas pipeline 45, i-lJi I j ----- Awl i I (please read the precautions on the back side before filling out this page) The remaining exhaust gas from the sedimentation reaction is extracted through the suction channel 48. The improved low-pressure chemical gas production process of the present invention has a low particle generation method. The second method is that when the reaction gas pipeline 45 reacts the low-pressure chemical vapor deposition reaction in the reactor 4 and deposits on the surface of the wafer 3 a After the rat's nest layer, the hot nitrogen gas is injected into the inner furnace tube 42 through the nitrogen pipeline 45 to perform steps such as blowing and breaking vacuum, and finally the wafer 3 is taken out from the official 42. Because the temperature difference of the hot nitrogen temperature injected in the nitrogen recording channel 44 of the present invention is not A, the internal temperature of the inner furnace tube 42 of the fish is not Α, so it is possible to reduce the gaseous stone in the privateness of relying on the skin, because of the drastic change in local temperature. As a result, the exfoliation of the nitride stone is caused, so a high-quality nitride film can be obtained, thereby improving the yield of the wafer 3. The above is a detailed description of the present invention using a preferred embodiment, and is not intended to limit the present invention. Any person skilled in the art can make minor changes and adjustments based on the present invention, which will still lose the essence of the present invention. The printing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs does not depart from the spirit and scope of the present invention, so it should be regarded as the further implementation status of the present invention. The national standard (CNS) A4 regulations of this paper standard outline (21 × X 297 issued