MU037 五、發明說明（1) 發明之領域 尤指一種刷洗一半導體晶 本發明提供一種刷洗裝置 片之晶背的刷洗裝置。 背景說明 & 顯影（devel0⑽ent)製程是半導體製程中重要的一 % ’顯影製程是將已完成曝光（exp〇sure)的半導體晶片放 置於顯影液中’以去除半導體晶片表面之圖案（pattern) 以外的光阻（photoresist)，最後再將顯影液去除。但是 顯影液往往會流至半導體晶片的晶背，而在晶背留下藥劑 水痕’影響到後續製程的潔淨度，進而降低後續製程的良 率〇 請參考圖一，圖一為習知清洗半導體晶片1 〇之晶背之 清洗裝置1 2的示意圖。習知清洗一半導體晶片1 〇之晶背的 清洗裝置1 2，是用清水來清洗流至半導體晶片1 〇之晶背的 顯影液。習知清洗裝置1 2包含有一可旋轉的晶片承座 (chuck) 1 4，用來放置並帶動半導體晶片1 〇旋轉，以及一 喷嘴（nozzle) 16用來對半導體晶片1()之晶背喷水。 習知清洗裝置12的清洗方式，是以晶片承座14帶動半 導體晶片1 0旋轉，同時由喷嘴1 6對半導體晶片1 0之晶背喷 510037 五、發明說明（2) 水’藉由，$的水流沖洗掉半導體晶片丨〇之晶背上的顯影 液。但是單單以水流來沖洗，往往無法將半導體晶片1 〇之 晶背清洗乾淨，如果遇到晶片材質為親水性 (hydrophilic)，則容易產生晶背水痕（·ΐ6Γ ffiark)，而 降低後續製程的潔淨度與良率。. 發明之概述 本發明之主要目的在於提供一種刷洗一半導體晶片之 晶背的刷洗裝置，該刷洗裝置可用於顯影製程來將該半導 體晶片晶背之顯影液完全洗淨，並避免留下晶背水痕。 本發明之刷洗裝置是用來刷洗一置放於一可旋轉的晶 片承座上方的半導體晶片。該刷洗裝置包含有一刷柄，一 中空刷頭以可上升及下降的方式設於該刷柄末端，一喷嘴 設於該中空刷頭之上，一葉片設於該中空刷頭下侧，以及 一驅動裝置係連接該刷柄，用來驅動該刷柄做往復運動。 當一水流輸入該刷洗裝置來進行刷洗時，該晶片承座會轉 動該半導體晶片，該水流會同時帶動該葉片及該中空刷頭 上升與轉動，並經由該中空刷頭自該喷嘴喷至該半導體晶 片之晶背，而該驅動裝置會帶動該刷柄之刷頭沿該半導體 晶片之徑向方向刷洗。 本發明刷洗裝置除了設有喷嘴可對半導體晶片之晶背MU037 V. Description of the invention (1) Field of the invention In particular, it relates to brushing a semiconductor crystal. The present invention provides a brushing device for cleaning the back of a wafer. Background & development process is an important% of the semiconductor process. 'Development process is to place the semiconductor wafer that has been exposed (exposure) in the developer' to remove the pattern on the surface of the semiconductor wafer. Photoresist, and finally remove the developer. However, the developing solution tends to flow to the back of the semiconductor wafer, leaving traces of pharmaceutical water on the back of the wafer. This affects the cleanliness of the subsequent process, thereby reducing the yield of the subsequent process. Please refer to Figure 1, which is a conventional cleaning process. Schematic diagram of the cleaning device 12 for the back of the semiconductor wafer 10. A conventional cleaning device 12 for cleaning a crystal back of a semiconductor wafer 10 is to clean the developing solution flowing to the crystal back of the semiconductor wafer 10 with water. The conventional cleaning device 12 includes a rotatable wafer chuck 14 for placing and driving the semiconductor wafer 10 to rotate, and a nozzle 16 for back spraying the crystals of the semiconductor wafer 1 (). water. The cleaning method of the conventional cleaning device 12 is to use the wafer holder 14 to drive the semiconductor wafer 10 to rotate, and at the same time, the nozzle 16 sprays back the crystal of the semiconductor wafer 10 510037. 5. Description of the invention (2) Water. The developing water on the back of the crystal of the semiconductor wafer is washed away by a stream of water. However, it is often impossible to clean the crystal back of the semiconductor wafer 10 with water flow alone. If the wafer material is hydrophilic, crystal back water marks (· ΐ6Γ ffiark) are easily generated, which reduces the cleanliness of subsequent processes. Degree and Yield. SUMMARY OF THE INVENTION The main object of the present invention is to provide a scrubbing device for scrubbing the crystal back of a semiconductor wafer. The scrubbing device can be used in a development process to completely clean the developing solution of the semiconductor wafer crystal back and avoid leaving crystal back water. mark. The brush cleaning device of the present invention is used to scrub a semiconductor wafer placed above a rotatable wafer holder. The brushing device includes a brush handle, a hollow brush head is provided at the end of the brush handle in a manner that can be raised and lowered, a nozzle is disposed on the hollow brush head, a blade is disposed on the lower side of the hollow brush head, and a The driving device is connected to the brush handle for driving the brush handle to make a reciprocating motion. When a water stream is input into the brushing device for brushing, the wafer holder rotates the semiconductor wafer, and the water stream simultaneously drives the blade and the hollow brush head to rise and rotate, and sprays from the nozzle to the via the hollow brush head. The crystal back of the semiconductor wafer, and the driving device will drive the brush head of the brush handle to scrub in the radial direction of the semiconductor wafer. In addition to the nozzle provided in the brush cleaning device of the present invention,
510037 五、發明說明（3) 喷水外，還包含有刷頭來刷洗半導體晶片之晶背，因此能 將殘留於半導體晶片之晶背上的顯影劑完全洗淨。本發明 裝置在刷洗時可以轉動半導體晶片，並以驅動裝置來帶動 刷頭沿半導體晶片的徑向方向刷洗，因此能洗淨半導體 片之晶背受污染的區域。 曰曰 圖 意圖 圖示之簡單說明 圖一為習知清洗半導體晶片之晶背之清洗裝置的示意 圖二為本發明刷洗半導體晶片之刷洗裝置的示意圖。 圖三為圖二所示之刷頭模組的組成元件圖。 圖四為圖二所示之刷頭模組的剖面示意圖。 圖五為圖四所示之刷頭模組進行刷洗動作時的剖面示 〇 圖六為圖二所示之驅動裝置的示意圖。 圖七為圖二所示驅動裝置之另一實施例的示意圖。 圖示之符號說明 1 0半導體晶片 14晶片承座 20半導體晶片 24晶片承座 2 8刷頭模組 32基座 1 2清洗裝置 16喷嘴 22刷洗裝置 26刷柄 3 0驅動裝置 34開口 馨510037 V. Description of the invention (3) In addition to water spraying, a brush head is also included to clean the crystal back of the semiconductor wafer, so the developer remaining on the crystal back of the semiconductor wafer can be completely cleaned. In the device of the present invention, the semiconductor wafer can be rotated during brushing, and the driving device can be used to drive the brush head to scrub in the radial direction of the semiconductor wafer, so that the area contaminated by the crystal back of the semiconductor wafer can be cleaned. Figure 1 Intention Brief description of the drawing Figure 1 is a schematic diagram of a conventional cleaning device for cleaning a wafer back of a semiconductor wafer Figure 2 is a schematic diagram of a brushing device for brushing a semiconductor wafer according to the present invention. FIG. 3 is a component diagram of the brush head module shown in FIG. 2. FIG. 4 is a schematic cross-sectional view of the brush head module shown in FIG. 2. Fig. 5 is a cross-sectional view of the brush head module shown in Fig. 4 during the brushing operation. Fig. 6 is a schematic diagram of the driving device shown in Fig. 2. FIG. 7 is a schematic diagram of another embodiment of the driving device shown in FIG. 2. Explanation of symbols in the figure 1 0 semiconductor wafer 14 wafer holder 20 semiconductor wafer 24 wafer holder 2 8 brush head module 32 base 1 2 cleaning device 16 nozzle 22 brushing device 26 brush handle 3 0 driving device 34 opening
第6頁 510037 五、發明說明（4) 3 6水流 39塑膠墊片 42噴嘴 4 6高壓氣體源 50活塞 54氣室 5 8氣體控制闊 62感應器 66機械回饋式之控 7 〇觸控式切換開關 7 4 L型連桿 38圓柱配件 4 0中空刷頭 44葉片 48氣壓缸 52氣室 5 6氣體管線 60電子回饋式之控制單元 64切換單元 制單元6 8觸控式氣體控制閥 7 2 Η型滑動配件 發明之詳細說明 請參考圖二，圖二為本發明刷洗半導體晶片之刷洗裝 置的示意圖。本發明刷洗一半導體晶片20之晶背的刷洗裝 置22包含有一可旋轉的晶片承座24用來放置半導體晶片 20 ’ 一刷柄（brush rod)26，一刷頭模組28設於刷柄26末 端，用來對半導體晶片20的晶背喷水並刷洗半導體晶片2〇 的晶背，以及一驅動裝置30連接刷柄26，用來驅動刷柄26 你文往復運動（reciprocating moti〇n)。當晶片承座2 4轉動 半導體晶片20時，刷頭模組28會對半導體晶片20的晶背噴 水’而驅動裝置3 0會帶動刷柄2 6之刷頭模組2 8沿半導體晶 片2 0的徑向方向（ra(jiai direction)刷洗。 510037 五、發明說明（5) 請參考圖三至圖五，圖三為圖二所示之刷頭模組2 8組 成元件圖，圖四為圖二所示之刷頭模組2 8的剖面示意圖， 圖五為圖四所示之刷頭模組2 8進行刷洗動作時的剖面示意 圖。本發明刷洗裝置22之刷頭模組28包含有一基座（base) 3 2，一開口 3 4設於基座底侧，用來將一水流3 6導入基座3 2 内，一圓柱配件3 8以可上升與下降的方式於基座3 2中間， 一塑膠墊片3 9設於基座内部上側，使圓柱配件3 8上升時能 與基座3 2緊密接合，一中空刷頭4 0設於圓柱配件3 8上侧， 一喷嘴42設於中空刷頭40之上，以及一葉片44設於圓柱配 件3 8内部。當水流3 6流入基座3 2内時，水流3 6會推動圓柱 配件38上升，並同時通過葉片44來轉動葉片44及中空刷頭 40，然後再經過中空刷頭40自喷嘴42喷出至半導體晶片20 的晶背。當刷洗裝置22用於顯影製程時以刷洗半導體晶背 的顯影液時，由於水是由喷嘴4 2喷出，可沖走刷頭4 0所刷 下的顯影液，因此刷頭40上不易殘留有顯影液，進而避免 刷頭4 0上殘留的顯影液再度污染半導體晶片2 0之晶背。 請參考圖六，圖六為圖二所示之驅動裝置3 0的示意 圖。驅動裝置3 0包含有一高壓氣體源46用來提供一高壓氣 體（未顯示），一氣壓缸（cylinder) 48内部設有一活塞 (?131:〇11)5 0將氣壓缸4 8隔開為二氣室（(：1^11^61〇52、54， 二氣體管線5 6分別連接於氣室5 2與氣室54，用來傳送氣室 5 2與氣室5 4内之氣體，一氣體控制閘5 8分別接連於高壓氣 510037 五、發明說明（6) 壓源46與氣體管線56，用來控制氣壓缸48内之氣體的輸入 與排出，以及一電子回饋（electrical feedback)式之控 制單元6 0連接於氣體控制閘5 8，用來依一固定之週期來切 換氣體控制閘58，以定期改變氣壓缸48内氣體輸入與排出 的方向。電子回饋式之控制單 設於氣壓缸4 8兩側的末端，以 於感應器6 2與氣體控制閘5 8。 相接，當活塞5 0會依該週期做 刷柄2 6的刷頭模組2 8來進行往 當氣體控制閘5 8將高壓氣 内的氣體時，高壓氣體會推動 的方向移動。當活塞50移動至 6 2會產生一相對應之信號，並 64會根據感應器62所傳來的信 入與排出氣體的方向。此時， 輸入氣室52並排出氣室54内的 活塞50往氣壓缸48之氣室^的 動至氣壓缸4 8的末端時，感應 Ϊ二二改變氣體控制閘58輪乂 述步驟，驅動裝置30即可 導體晶片2 0的徑向方向移動並 請參考圖七，圖七為圖二 元6 0包含有二感應器6 2分別 及一切換單元6 4分別電連接 刷柄26穿過氣室52與活塞50 週期運動時，活塞5 0會帶動 復運動。 體輸入氣室54並排出氣室52 活塞50往氣壓缸48之氣室52 氣壓缸48的末端時，感應器 傳入切換單元64。切換單元 號，來切換氣體控制閘5 8輸 氣體控制閘5 8會將高壓氣體 氣體，因此高壓氣體會推動 方向移動。當活塞50再度移 器6 2會再產生一相對應之信 與排出氣體的方向。重複前 刷柄2 6做往復運動，來沿半 刷洗。 所示之驅動裝置30之另一實 510037 五、發明說明（7) 施例的示意圖。本發明驅動裝置3 0之另一實施例是將如圖 五中的電子回饋式之控制單元6 0更換為一機械回饋 (mechanical feedback)式之控制單元66，而氣體控制閘 58更換為一觸控式（trigger)氣體控制閘68。觸控式 (trigger)氣體控制閘68左右側各有一觸控式切換開關 7 0。機械回饋式之控制單元6 6包含有一 Η型滑動配件 (Η- sharp mechanism) 7 2水平放置於刷洗裝置22之内，以 及一 L型連桿74穿過氣室54與活塞50相接，其底端設於雖 滑動配件7 2之一開口内，觸控式氣體控制閘6 8則設於Η型 滑動配件7 2之另一開口内。 當觸控式氣體控制閘68將高壓氣體輸入氣室54並排出 氣室5 2内的氣體時，高壓氣體會推動活塞5〇往氣壓缸4 8之 氣室5 2的方向移動。當活塞5 〇移動時，l型連桿7 4會隨活 塞5 0移動以帶動Η型滑動配件7 2。當活塞5 0移動至氣壓缸 48的末端時，Η型滑動配件72會與觸控式氣體控制閘68— 側之觸控式切換開關7 0相接觸，來切換觸控式氣體控制閘 6 8之輸入與排出氣體的方向。此時，觸控式氣體控制閘68 會將高壓氣體輸入氣室52並排出氣室54内的氣體時，因此 高壓氣體會推動活塞50往氣壓缸48之氣室54的方向移動。 當活塞50再度移動至氣壓缸48的末端時，L型連桿η會帶 動Η型滑動配件72來與觸控式氣體控制閘68另一側之&控 式切換開關7 0相接觸，來切換觸控式氣體控制閘6 8之輸入 與排出氣體的方向。重複前述步驟，驅動裝置3〇即可帶動Page 6 510037 V. Description of the invention (4) 3 6 Water flow 39 Plastic gasket 42 Nozzle 4 6 High pressure gas source 50 Piston 54 Air chamber 5 8 Gas control wide 62 Sensor 66 Mechanical feedback control 7 〇 Touch switch Switch 7 4 L-shaped connecting rod 38 Cylindrical fitting 4 0 Hollow brush head 44 Blade 48 Pneumatic cylinder 52 Air chamber 5 6 Gas line 60 Electronic feedback control unit 64 Switching unit control unit 6 8 Touch gas control valve 7 2 Η For a detailed description of the invention of the sliding accessory, please refer to FIG. 2, which is a schematic diagram of a brushing device for brushing semiconductor wafers according to the present invention. The brush cleaning device 22 for cleaning the back of a semiconductor wafer 20 according to the present invention includes a rotatable wafer holder 24 for placing the semiconductor wafer 20 ′, a brush rod 26, and a brush head module 28 provided on the brush handle 26. The tip is used to spray water on the wafer back of the semiconductor wafer 20 and to clean the wafer back of the semiconductor wafer 20, and a driving device 30 is connected to the brush handle 26 for driving the brush handle 26 to reciprocating motión. When the wafer holder 24 rotates the semiconductor wafer 20, the brush head module 28 sprays water on the crystal back of the semiconductor wafer 20 and the driving device 30 drives the brush head module 2 6 along the semiconductor wafer 20. The radial direction (ra (jiai direction) brushing. 510037 V. Description of the invention (5) Please refer to Figures 3 to 5, Figure 3 is a component diagram of the brush head module 28 shown in Figure 2, Figure 4 is a diagram A schematic cross-sectional view of the brush head module 28 shown in FIG. 2 is shown in FIG. 5. FIG. 5 is a schematic cross-sectional view of the brush head module 28 shown in FIG. 4 during a brushing operation. The brush head module 28 of the brushing device 22 of the present invention includes a base. The base 3 2 is provided with an opening 3 4 on the bottom side of the base for introducing a current of water 3 6 into the base 3 2. A cylindrical fitting 3 8 can be raised and lowered in the middle of the base 3 2. A plastic gasket 39 is provided on the upper side of the base, so that the cylindrical fitting 38 can be tightly engaged with the base 32 when the cylinder is raised. A hollow brush head 40 is provided on the upper side of the cylindrical fitting 38, and a nozzle 42 is provided on the upper side. Above the hollow brush head 40, and a blade 44 is provided inside the cylindrical fitting 38. When the water flow 36 flows into the base 32, the water flow 36 pushes The column fitting 38 rises, and simultaneously rotates the blade 44 and the hollow brush head 40 through the blade 44 and then ejects from the nozzle 42 to the wafer back of the semiconductor wafer 20 through the hollow brush head 40. When the brushing device 22 is used in the developing process, When the developer liquid on the semiconductor wafer is cleaned, since the water is sprayed from the nozzle 42, the developer liquid washed by the brush head 40 can be washed away, so it is difficult for the developer liquid to remain on the brush head 40, thereby avoiding the brush head 40. The remaining developing solution on the surface again contaminates the crystal back of the semiconductor wafer 20. Please refer to FIG. 6, which is a schematic diagram of the driving device 30 shown in FIG. 2. The driving device 30 includes a high-pressure gas source 46 for providing a high-pressure For gas (not shown), a cylinder (cylinder) 48 is provided with a piston (? 131: 〇11) 50 to separate the cylinder 48 into two air chambers ((: 1 ^ 11 ^ 61〇52, 54, Two gas lines 5 6 are connected to the air chamber 5 2 and the air chamber 54 for transmitting the gas in the air chamber 5 2 and the air chamber 54 respectively. A gas control gate 5 8 is connected to the high-pressure gas 510037 respectively. 5. Description of the invention ( 6) Pressure source 46 and gas line 56 are used to control the input and exhaust of gas in the pneumatic cylinder 48 And an electronic feedback control unit 60 connected to the gas control gate 58 is used to switch the gas control gate 58 at a fixed period to periodically change the direction of gas input and exhaust in the pneumatic cylinder 48 The electronic feedback control unit is provided at the ends of both sides of the pneumatic cylinder 4 8 so that the sensor 6 2 and the gas control gate 5 8 are connected. When the piston 50 is used as the brush head of the brush handle 2 6 according to the cycle Modules 2 and 8 are moved. When the gas control gate 5 8 moves the gas in the high pressure gas, the high pressure gas will move in the direction pushed. When the piston 50 moves to 62, a corresponding signal is generated, and 64 is based on the direction of the incoming and outgoing gas from the sensor 62. At this time, when the piston 50 which is input into the air chamber 52 and discharged from the air chamber 54 is moved to the end of the pneumatic cylinder 48 to the end of the pneumatic cylinder 48, the sensor 22 changes the gas control gate 58 to describe the steps, and drives The device 30 can move the conductor wafer 20 in the radial direction and please refer to FIG. 7. FIG. 7 is a diagram of a binary element 60. It includes two sensors 6 2 and a switching unit 6 4 respectively. When the chamber 52 and the piston 50 move cyclically, the piston 50 will drive the complex movement. When the body enters the air chamber 54 and exits the air chamber 52 and the piston 50 reaches the end of the air chamber 52 of the pneumatic cylinder 48, the sensor is introduced into the switching unit 64. Switch the unit number to switch the gas control gate 5 8. The gas control gate 5 8 will move the high-pressure gas, so the high-pressure gas will move in the direction of the push. When the piston 50 moves again, the shifter 62 will generate a corresponding letter and the direction of the exhaust gas. Repeat the front brush handle 2 6 to make a reciprocating motion to scrub in half. Another embodiment of the driving device 30 shown 510037 V. Description of the invention (7) A schematic diagram of an embodiment. Another embodiment of the driving device 30 of the present invention is to replace the electronic feedback control unit 60 shown in FIG. 5 with a mechanical feedback control unit 66, and replace the gas control brake 58 with a one-touch Controlled (trigger) gas control gate 68. The touch-control gas control gate 68 has a touch-control switch 70 on each of the left and right sides. The mechanical feedback control unit 6 6 includes a sharp-sharp mechanism 7 2 placed horizontally in the brushing device 22, and an L-shaped connecting rod 74 is connected to the piston 50 through the air chamber 54. The bottom end is disposed in one of the openings of the sliding fitting 72, and the touch-control gas control gate 68 is disposed in the other opening of the Η-shaped sliding fitting 72. When the touch-type gas control gate 68 inputs high-pressure gas into the gas chamber 54 and exhausts the gas in the gas chamber 52, the high-pressure gas pushes the piston 50 toward the gas chamber 52 of the pneumatic cylinder 48. When the piston 50 moves, the l-shaped connecting rod 74 will move with the piston 50 to drive the Η-shaped sliding fitting 72. When the piston 50 moves to the end of the pneumatic cylinder 48, the Η-shaped sliding fitting 72 will contact the touch-control gas switch 68 on the side of the touch-type gas control gate 68 to switch the touch-type gas control gate 6 8 The direction of the input and exhaust gas. At this time, when the touch-type gas control gate 68 inputs high-pressure gas into the gas chamber 52 and exhausts the gas in the gas chamber 54, the high-pressure gas will push the piston 50 toward the air chamber 54 of the pneumatic cylinder 48. When the piston 50 moves to the end of the pneumatic cylinder 48 again, the L-shaped connecting rod η will drive the Η-shaped sliding fitting 72 to contact the & control-type switch 70 on the other side of the touch-type gas control gate 68. The direction of the input and exhaust gas of the touch-type gas control gate 68 is switched. Repeat the previous steps, the drive device 30 can drive
第10頁 510037 五、發明說明（8) 刷柄2 6做往復運動，來沿半 刷洗。 相較於習知清洗半導體 明刷洗裝置增加了刷頭來刷 將用清水沖洗不掉的顯影劑 行刷洗時，須轉動半導體晶 沿半導體晶片的徑向方向: 曰日#受污染的區域。本發明 的升降，水流能從刷頭中 了洗猶：的效果。 導體晶片2 0的徑向方向移動並 晶片之晶背的清洗裝置，本發 洗半導體晶片之晶背，因此能 完全刷洗乾淨。本發明裝置進 片，並以驅動裝置來帶動刷頭 洗，因此能洗淨半導體晶片之 刷頭模組能由水流來控制刷頭 噴出並帶動刷頭旋轉，更加強 以上所述僅本發明 利範圍所做之均等變化 範圍。 之較佳實施例，凡依本發明申請專 與修飾，皆應屬本發明專利之涵蓋 510037 圖式簡單說明 第12頁Page 10 510037 V. Description of the invention (8) The brush handle 2 6 makes a reciprocating motion to scrub along the half. Compared with the conventional cleaning of semiconductors, the bright brushing device has a brush head to brush the developer that cannot be washed with water. When brushing, the semiconductor crystal must be rotated. In the radial direction of the semiconductor wafer: 日 日 #Contaminated area. The lifting effect of the present invention is that the water flow can be washed from the brush head. The cleaning device of the wafer back that moves the conductor wafer 20 in the radial direction and the wafer back can clean the wafer back completely because it cleans the wafer back of the semiconductor wafer. The device of the present invention advances the film and drives the brush head to wash by the driving device, so the brush head module capable of cleaning the semiconductor wafer can control the spray of the brush head and drive the rotation of the brush head by the water flow. Equal range of change made by range. For the preferred embodiment, any application for and modification according to the present invention shall be covered by the patent of the present invention.