TW508833B - Light emitting diode with direct cooling - Google Patents

Abstract

A light emitting diode is cooled directly by placing a chip on a substrate and bonded to an electrode; extending wires to the outside of the sealing; encapsulating with a air-tight cover and evacuating air inside the air-tight cover; and filling a medium into the air-tight cover and sealing the package. When the chip is activated electrically to emit light, the heat generated is contacted with and conducted in high heat exchange rate by the medium surrounding the chip, the substrate and the wires and is dissipated efficiently by the air-tight cover to the outside.

Description

508833

V. Description of the invention (1) The present invention relates to a device that can improve the luminous efficiency, and can even quickly replace the specialized ", and bright devices", which can not only simplify the circuit layout, but also save power consumption, increase luminous efficiency and extend the life of the chip. Referred to as "direct-cooled light-emitting, light-emitting diode (L · E · D)" is a widely used product in the modern science and technology industry. Zhuanzhuan's all use a variety of light-emitting diodes.

One, however, according to the light-emitting diodes 10 (as shown in Figure 1) in the field of conventional technology, the epoxy jelly (Epoxy) 1 3 with thermal insulation (non-heat-conducting) effect is coated on the chip jj and the electrode i 2 circuits to protect the chip ij and its wires 14, but it is not difficult to find the following defects after use:

差 Poor heat dissipation—wrap the entire set of wafers 11 and electrodes 12 with epoxy resin 13 to form a nearly thermally sealed environment. Although the light-emitting diode 11 is called a cold light source, since its wafer j! Still emits heat when it emits light, its central light-emitting layer can reach up to four baidus. Because of its high conversion efficiency, no one pays much attention to its heat dissipation efficiency. The chip is surrounded by a gold heat dissipation area (the most heat dissipation range), but it is covered by epoxy resin 13. The heat cannot be dissipated, and it can only be conducted slowly by the wires 1 4 (violating the physical Law of heat rise), so although there is no temperature (or very low temperature) above the light-emitting diode 10, the real non-light-emitting diode does not generate heat, but its heat is blocked by the epoxy resin 13, Therefore, it is easy to produce the illusion of no heat instead of true no heat. When the temperature rises, because the light-emitting diode 10 is a semiconductor material component, the energy gap (Iqn, P-N junction light-emitting layer) collapses due to excessive temperature, the luminous efficiency is reduced or even

Page 4 V. Description of the invention (2) Destruction, and the heat will cause the light-emitting diode 10 to no longer be injected. “Heat also becomes the light-emitting diode 1 〇 Wafer 丨 丨 The main current of deterioration is larger, so it is vulnerable to humidity and oxidation First, because the wafer is covered with 丨 丨 and Ⅱ, ° uses epoxy resin 1 3 as the material, when the thermal circuit is applied, the gap u due to different expansion coefficients at the mining site (such as J 丄: guide f14 connected Moisture, air, and other impurities are easily infiltrated by this; erosion: film "In addition to accelerating the decline period and relatively affecting the use of the product to shorten the product. In view of this, the main purpose of the present invention is ... Provide a direct-cooling type light-emitting diode! The circuit that contacts the chip with the electrode is fixed in a base lead frame and sub-packaged in an air-tight cover (such as a glass cover) with heat dissipation effect. Air (vacuum state), and then injected into the insulation or cooling liquid or gas (medium) to close, so that the light-emitting diode has a stable working space, blocking air, moisture, and all impurities that may cause wafer degradation, Work The heat can be dissipated to the surrounding substrate heat dissipation area and quickly and directly guided by the mediator to form an air-tight cover and quickly dissipate to the outside world, so the product specifications are not restricted from then on, and the use efficiency and life are also greatly improved! Secondary objective: To provide a direct-cooling light-emitting diode, which can increase the number of wafers due to good heat dissipation, such as: blue wafers and yellow wafers = light can produce white light; and blue wafers, green wafers and red wafers Mixed light can get various colors of light ... and so on, you can make light emitting diodes of various colors, and its brightness can replace the conventional traditional bulbs and light emitting diode array devices. To engage in the development and production of electronic components for many years

Page 5 508833

V. Description of the invention (3) Latent experience, accumulated material science, thermodynamics, optics, and other phase-returning expertise. Research experiments ’have led to the invention of this invention. The further structure, characteristics, and purpose of the present invention will be fully understood by the artist after enumerating specific embodiments and detailed descriptions in conjunction with the drawings. & The preferred embodiment of the present invention will be described in detail with reference to the drawings. First, please refer to FIG. 3, which is a schematic diagram of the three-dimensional structure of a preferred embodiment of the present invention. The main part is to place the wafer 31 on the substrate 32 for bonding electrodes. The lead wire 34 extends outward from the sealing portion 35. After being encapsulated with the airtight cover 36, the internal air is removed, and the medium 37 is injected to close the structure. Its ^: The substrate 3 2 'is an array of heat sinks arranged on the surface. The air-tight cover 36 is a cover-shaped body made of a high coefficient of heat-conducting material in various specifications, and has a space for accommodation therein.

The medium 37 'is mainly liquid or gas with insulation cooling effect, filled with gas, cover 36, and directly contacting the wafer 3 1 and the substrate 3 2, and the wire 3 4; it can also be in a vacuum state (as shown in the figure) (Shown in 4) Radiation is used to dissipate the heat of action 50 1 ′ of the wafer 31, which can provide a very large amount of space for the wafer under vacuum. With the characteristics of the above-mentioned element structure, its use effect is described as follows: Please continue to refer to FIG. 5 ′, which is a schematic diagram of a use state of a preferred embodiment of the present invention. As shown in the figure, the power is turned on to activate the wafer 31 to emit light, and the heat 50 is then contacted and guided by the media 37 surrounding the wafer 31, the substrate 32, and the wire 34 to improve the heat exchange rate. The mask 3 g quickly escapes outward. To sum up, the present invention is a structure using materials and electronic characteristics.

508833

θ is a high degree of invention that is based on the laws of physics and the technology that fully enhances the heat exchange rate. This is to break through the product specifications of the light-emitting diodes and extend the service life, taking into account the economic benefits of the industry, and meeting actual needs and safety. Although the preferred embodiment of the present case has been described in this specification in conjunction with the drawings, it is obvious that those skilled in the art can make modifications to the embodiment, which means that all equal changes and modifications made in accordance with the scope of the patent application of the present invention should be Still within the scope of the invention patent.

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508833 Brief description of the drawings Brief description of the drawings: Figure 1 is a schematic view of the structure and cross-section of a conventional light-emitting diode. Figure 2 is a state of use and a partially enlarged view of a conventional light emitting diode. Fig. 3 is a schematic view of the three-dimensional structure of a preferred embodiment of the present invention. Fig. 4 is a schematic view of the structure of another preferred embodiment of the present invention. Figure 5 is a schematic diagram of the use state of a preferred embodiment of the present invention. Reference number: [Conventional] 1 0 light-emitting diode 11 chip 14 wire [direct cooling] 30 light-emitting diode 3 1 chip 34 wire 37 Dielectric 50 heat 1 2 electrodes 1 5 gap 32 substrate 3 5 seal 1 3 epoxy resin 33 electrode 36 airtight cover

II

Claims (1)

508833 VI. Scope of patent application 1. A direct-cooling light-emitting diode, which is mainly a chip mounted on a substrate bonding electrode, whose wires extend outward from the seal, encapsulated with an oxygen shield to extract internal air, and inject The medium is closed to complete the construction; of which: the base is an array of heat sinks arranged on the surface; the airtight cover is a hood-shaped body made of a high coefficient of heat-conducting material into various gauge forms, and the space is provided inside; It is mainly liquid or gas with insulation and cooling effect. It is filled in the airtight cover and directly contacts the chip, substrate and wires; Here, the chip is turned on to generate light and emit light. The heat is then guided by the surrounding media that surrounds the chip, the substrate, and the wires to increase the heat exchange rate. By. 2. The direct-cooling light-emitting diode as described in item 2 of the scope of the patent application, in which the medium can be in a vacuum state, and the radiation heat is used to dissipate the heat of the wafer, and the wafer can provide a very large amount of space under the vacuum. Page 9