TW508818B - Solid imaging device and method of fabricating the same - Google Patents
Solid imaging device and method of fabricating the same Download PDFInfo
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- TW508818B TW508818B TW090110559A TW90110559A TW508818B TW 508818 B TW508818 B TW 508818B TW 090110559 A TW090110559 A TW 090110559A TW 90110559 A TW90110559 A TW 90110559A TW 508818 B TW508818 B TW 508818B
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- Prior art keywords
- solid
- image sensor
- imaging device
- state imaging
- image
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- 238000003384 imaging method Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000007787 solid Substances 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000005488 sandblasting Methods 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000004806 packaging method and process Methods 0.000 claims description 14
- 238000005266 casting Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000010586 diagram Methods 0.000 claims description 2
- 239000005357 flat glass Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 206010011469 Crying Diseases 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 208000024891 symptom Diseases 0.000 claims 1
- 239000006059 cover glass Substances 0.000 abstract description 10
- 239000000428 dust Substances 0.000 abstract description 8
- 238000000465 moulding Methods 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 23
- 239000004020 conductor Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 2
- -1 organic plate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
Description
丄 δ 五、發明說明(1) =發明涉及的是··在幹膠片上面直接粘結蓋 =或粘結時所產生的微塵物及灰塵等污染, 便易的固態攝像裝置及製作方法。 使用更加 取近的攝像機,尤其是趨向於高性能的 =凸攜帶型攝像機,消1者特別對於充分再 J更力:細微的細節等高畫質的要求越來越 “’尤其是所謂攝像機的心臟部分,即固 的 /電何耦。^件)或CM0S的晝素數擴大 也是最為關注的部分。 此的挺回 圖1所示的,是過去成為主流的,制陶竞 怨攝像裝置的實例截面圖。在於圖丨中的參考裝 網導體⑴的陶竟包裝,其中央“配疋置凹表 二°丄上。凹槽部(3)中利用導電㈣合劑絲焊固定有 今3絲】片’⑽式簡晶片的電極板(6)利用金屬 =(7)絲^於金屬網導體(2)上。並且,參考符號(8 為在陶瓷包裝(1)的侧面露出來的金屬網導體(2) 切斷面附著的引導端子。 圖2所不的是利用樹脂包裝的傳統的固體攝影裝置的 斷面圖。樹脂包裝包括由内引(9)和外引(1〇)形成的 引線座(11 ),在其中央部設有凹槽(丨3 ),凹槽(13) 中用導電性粘膠模接合有CCD或CM〇s晶片。CCD *CM〇s晶片 上的電極板(6 )利用金屬絲(7 )絲焊於内引(9 )上。 如同上述,傳統的固體攝影器件的製造工序如附圖3 第6頁 508818Δ δ V. Description of the invention (1) = The invention relates to: · directly attaching a cover on a dry film = or pollution caused by dust and dust generated during adhesion, and a solid-state imaging device and a manufacturing method that are easy to use. Use closer cameras, especially high-performance = convex-carrying cameras. Consumers are particularly demanding for more full-fledged: fine details such as high-definition requirements are increasingly "" especially the so-called camera The heart part, that is, the solid / electrical coupling. ^) Or the daytime prime expansion of the CM0S is also the most concerned part. This is quite similar to the one shown in Figure 1, which has become the mainstream in the past. Example cross-section view. The ceramic packaging of the reference net conductor ⑴ in the figure 丨 is shown in the center, and its center is “concave table 2 ° 丄”. The electrode plate (6) of the present three-wire simple chip is fixed to the groove portion (3) by wire bonding with a conductive bonding agent, and the metal plate (2) is made of a metal wire (7). Also, reference numeral (8) is a guide terminal attached to the cut surface of the metal mesh conductor (2) exposed on the side surface of the ceramic package (1). What is not shown in FIG. 2 is a cross section of a conventional solid-state imaging device using a resin package. Figure. The resin package includes a lead socket (11) formed by an inner lead (9) and an outer lead (10), and a groove (丨 3) is provided in the center portion thereof, and a conductive adhesive is used in the groove (13). A CCD or a CMOS wafer is bonded to the mold. The electrode plate (6) on the CCD * CM0s wafer is wire-bonded to the inner lead (9) using a metal wire (7). As mentioned above, the manufacturing process of a conventional solid-state imaging device As shown in Figure 3 Page 6 508818
=,如圖3所示實例—樣,在工序?⑽ 弄幹之後,為分離圖像感測哭* / ^ 口诼杵I片=, As shown in Figure 3-like, in the process?之后 After drying, cry for sensory image separation * / ^ 诼 口 诼 片 I
在工序ΡΠΟ _進行鑄模^理f仃J模(p]i0)處理。 片分離,在工庠PTM& t處時,將圖像感測器與幹膠 在序20中陶瓷包裝或PCB等入内到為工序P 中衣作的室内,然後通過工序pi3〇,在pu〇中將鑄 處理的各種时感測H (或稱裸露晶片)模接合 述陶In the step P Π 0 _, a mold process (f) J mode (p) i0) processing is performed. When the film is separated, at the PTM & t position, the image sensor and the adhesive are placed in the ceramic packaging or PCB in the sequence 20 into the room made for the P coat, and then pass through the process pi3〇, at pu〇. Sensing H (or bare wafer) die bonding during casting process
瓷包裝或PCB等部分。 U 通過工序P1 30過程粘合在包裝上的裸露晶片的電極板 (6 ),在工序P140中絲粘結於包裝或PCB等部分。在工 P1 40中的粘絲過程結束之後,為保護裸露晶片及粘結部 分、’在工序P160中’將蓋玻片钻結在包袭上面。上述蓋玻 片通過工序P1 50,檢測玻璃的質量及狀態,且經工序pi6〇 按照一定大小進行裁剪處理。 如附圖4所示為通過上述工序完成的固體攝影裝置的 斷面圖。附圖4所示的固體攝影器件的斷面為實際上是如 圖3所示的所有工序全部完成之後的斷面狀態,、附圖丨至圖 2所不的傳統的固態攝像裝置的斷面沒有實質上的差異。 w但圖4所示的斷面中,與附圖1如圖2所示的傳統的固 態攝像裝置的斷面存在的差異,就是蓋玻片(丨5 )部分, 此部分用於保護裸露晶片。即,因為裸露晶片由數十萬個 =若干鏡片形成的像數轉換為電性化的光電二極體等感測 器的集合而形成,其感測器的圖像傳感區域上由於灰塵等 的污朵日守即I成為品質量不合格,為了防止現象而配置 蓋玻片。 508818 五、發明說明(3) _ 然而,由於在運輸過程如同在 絲黏合一樣亦發生灰塵和不純物 I、处理和模接合或點 導致固態攝像裝置品質下ζ物4巧染幹膠片現象,從而 本發明的目的在於··為了解決 固態攝像器件的裸露晶片部分於^ 題,提供為解決 而導至的收率低下等問題,在膠 °不純物等的殘物 以此來防止鑄模時不純物及片, 易的固態攝像裝置及其製造方法。知玍的木,處理上簡 為達到上述目的,本發明 θ . 分採用導電性枯合劑鑄模像器中央部 明、高硬度特徵的蓋部件。表面直接化成的、具有透 而發明的另一附加特徵為,其蓋部 平板玻璃的-面是經蝕刻處理的,、蝕刻處理的’、2破璃, 固態攝像器件的周圍。 蝕乂處理的一面固定在 板或上;蓋部件的材料為有機 固定在所述固態攝像器件的週邊面°又有凹槽’凹槽的邊緣 完質固=裝置製造工序的依次為:檢測 理;在幹膠片圖傻ϊΐ分的玻璃部分用噴沙處 處理過的平柘ί ΐ傳感部件周圍,粘合通過第—工序蝕列 為分離圖像傳感,進二υ過弟-工:結合的幹膠片上 ^進订每松處理;通過第三工序經缚模處Ceramic packaging or PCB. U The electrode plate (6) of the bare wafer bonded to the package through the process P1 to 30, and the wire is bonded to the package or the PCB in the process of P140. After the wire bonding process in the process P1 40 is completed, to protect the bare wafer and the bonding portion, "in the process P160", the cover glass is drilled on the cover. The cover glass is inspected for quality and condition of the glass through step P1 50, and is cut to a certain size after step pi60. Fig. 4 is a sectional view of the solid-state imaging device completed through the above steps. The cross-section of the solid-state imaging device shown in FIG. 4 is a cross-sectional state after virtually all the processes shown in FIG. 3 are completed. The cross-section of the conventional solid-state imaging device shown in FIGS. There is no substantial difference. However, the difference between the cross-section shown in FIG. 4 and the cross-section of the conventional solid-state imaging device shown in FIG. 1 and FIG. 2 is the cover glass (5) portion, which is used to protect the bare wafer. . That is, because the bare chip is formed by converting the number of images formed by several hundred thousand = several lenses into a set of sensors such as an electrified photodiode, the image sensing area of the sensor is affected by dust or the like. The stained Ichigo I will become an unqualified quality, and a cover glass is arranged to prevent the phenomenon. 508818 V. Description of the invention (3) _ However, because dust and impurities I occur during transportation as well as wire bonding, processing and die bonding or dots lead to the phenomenon of zeta dyeing dry film under the quality of solid-state imaging devices. The purpose of the invention is to solve the problems of the bare wafer portion of the solid-state imaging device and to provide a solution to the problems such as low yield. The residues such as impurities in the glue are used to prevent impurities and chips in the mold. Easy solid-state imaging device and manufacturing method thereof. In order to achieve the above-mentioned purpose, the wood of known wood is treated as a cover member with a clear, high-hardness feature in the central part of the imager using a conductive desiccant. Another feature of the invention that is formed directly on the surface and is transparent is that the cover surface of the flat glass is etched, the etched glass is etched, and the glass is surrounded by the solid-state imaging device. The etched side is fixed on the board or the material of the cover member is organically fixed on the peripheral surface of the solid-state imaging device. The edge of the groove is intact and solid. The order of the device manufacturing process is: ; Around the flat part of the glass part of the dry film that was treated with sandblasting, the adhesive parts were bonded through the first process to separate the image sensors. Binding the loose film on the combined dry film; passing the binding process through the third process
第8頁Page 8
:)圓 IS 五、發明說明(4) 理的圖像感測器,進行模接合至 過第四工序粘結在包I ^衣或PCB荨;將通 包裝或PCB等之後,進、行鑄造' 4測器的板材部分絲焊至 =明的特徵為:用導、 裝的中央部的固態攝像 刎埼筷、,° σ固疋在包 傳感區域周圍的上表面直开 ^態攝像器件的圖像 壁上形成透明高硬度蓋部J…局度的侧壁;在上述侧 本發明的附加特徼兔· 成型,整體上形成四角㉟餅狀述侧壁採用塑膠或有機板等 本發明的另一附加牿 璃,有機板或塑膠,1由為:蓋部件的材料可採用玻 4日秘丄 /、兩面均為平面。 根據本發明的固態攝 於成型的材料形成具有f置製,序依夂為:採用易 序形成的拕架的托面的質,狀的托$,★測通過第-工 板狀的蓋部件粘結於托牟:及狀悲Π ’將f明高硬度平 進行鑄模工序;將通過第四工序鑄 過第四工序包裝或PCB等進行模接合;將通 包裝或PCB等之^進行H圖像感測器的板材部分絲焊至 的4:2!徵在於:用、。電性枯合劑枯結固定在包裝 金屬綠姑^恶攝像為件;I態^^象器件電極板配置於用 的圖像#=固態攝像裝m述固態攝像器件的上面 口像傳感區域因透明粘貼的透明高硬度平板型蓋 508818 五、發明說明(5) 根據本發明 片圖像感測器上 件;通過第一工 行鑄模處理;通 接合至陶瓷包裝 的圖像感測器的 禱造。 本發明所述 熟知的人,參照 加明確的。 以下參照附 說明。 的固態攝像裝詈制 、 面,用透明粘麻工序依次為·在幹膠 序結合的幹膠片明、高硬度平板部 過第二工序經鑄;y刀離圖像感测器,進 π I # ‘扠處理的圖像感測器,# 或PCB專,將通過第 拉 的目的與各藉彳晷机 ^ ^ ^ 種優點,對於此技術領域相參 附圖和後述的正確實例,掌握和理 圖,結合本發明的實例對本發明進行詳細 板材部分絲焊至包袭編等之後;; 圖5所示的是,根據本發明的固態攝像裝置的製 序〜線實例圖。如圖5所示,在工序p2〇〇中當直上含夕 =感測器的將膠片入室内’並在工序p21"為分離夕圖個 傳感進行鑄模處理。:) Round IS V. Description of the invention (4) The image sensor of the principle is die-bonded to the package I or the PCB in the fourth step; after the package or PCB is passed, it is cast. The characteristics of the plate of the 4 tester are wire-welded to the following: the solid-state video camera chopsticks at the center of the guide are installed, and the σ is fixed on the upper surface of the package sensing area. A transparent high-hardness cover part J ... is formed on the wall of the image. The side wall of the present invention is formed on the above side. The additional special bunny rabbit of the present invention is molded to form a four-cornered pie cake as a whole. The side wall is made of plastic or organic plate. Another additional glass, organic plate or plastic, 1 is: the material of the cover component can be glass 4th, and both sides are flat. The solid-state photographed material according to the present invention is formed with a f system, and the sequence is as follows: the quality of the support surface of the stent that is formed in an easy-to-order manner, the shape of the support, and Adhesion to Tuomou: The state of f hardness and high hardness will be used for the molding process; the fourth process will be used to package the fourth process packaging or PCB for mold bonding; and the through packaging or PCB will be shown in Figure H. The 4: 2 to which the plate part of the sensor is wire-welded! The sign lies in:. The electric compound is fixed on the packaging metal green film as an image; the state of the image device electrode plate is used in the image # = solid-state imaging device, and the image sensing area of the solid-state imaging device is described above. Transparent, high-stiffness, flat-plate cover 508818 V. Description of the invention (5) The upper part of the image sensor according to the present invention; processed by the first ICBC mold; praying for the image sensor connected to the ceramic package . The well-known persons of the present invention are referred to plus. Refer to the attached description below. The surface of the solid-state imaging device is made in a transparent and sticky process. The wafer and high-hardness flat plate parts combined in the adhesive sequence are cast in the second process; # 'Fork image sensor, # or PCB special, will use the advantages of the first pull and each machine ^ ^ ^ advantages, for the relevant drawings in this technical field and the correct examples described later, master and Fig. 5 is a detailed diagram of the present invention in combination with the examples of the present invention after detailed wire welding of the sheet material to the package; etc .; FIG. 5 shows a manufacturing sequence of the solid-state imaging device according to the present invention. As shown in FIG. 5, in the step p200, when the film is placed on the sensor, the film is placed in the room ', and in the step p21, a mold process is performed to separate the sensors.
在工序P210中,進行鑄模處理之前,為保護幹膠 面的晶片,在晶片的周圍粘結蓋玻片。此蓋玻片通過工 P220,被測其玻璃的質量及狀態。通過工序?23〇蝕刻蓋玻 f ’在工序P240中為用金屬絲粘結板材部分,相應於:材 邛分的玻璃進行喷沙處理。 之後,在上述工序P210中進行鑄模處理。 通過上述工序P2 1 0過程進行鑄模處理的各圖像感測器 (或稱為晶片)’與幹膠片分離,通過工序P250將利用工In step P210, a cover glass is adhered around the wafer in order to protect the wafer with a dry adhesive surface before the mold processing. This cover glass was tested for quality and condition of glass through P220. Through the process? In the step E240, the cover glass f 'is bonded to the sheet material portion with a metal wire in step P240, and the glass corresponding to the material is subjected to sandblasting treatment. Thereafter, a mold process is performed in the above-mentioned step P210. Each image sensor (or wafer) that has been subjected to a mold process through the above-mentioned process P2 10 is separated from the dry film, and the process
508818508818
序P260進行鑄造處理的陶瓷包裝或pCB等部分置入室内。 v通過P270工序,將粘結在包裝上面的晶片的板材部 分’用絲枯結在包裝或pCB上。在上述工序p27〇結束粘絲 過程之後,將通過P28〇工序進行鑄造處理。在工序?29〇完 成固態攝像裝置的組裝。 如同上述工序,根據本發明的固態攝像器件的大至製 作工序和參照已完成的固態攝像器件的斷面實例圖附圖 6,會發現下列特徵。The ceramic packaging or pCB, etc., which are subjected to the casting process of P260, are placed in the room. v Through the P270 process, the sheet portion of the wafer adhered to the package is dried on the package or pCB with silk. After the wire bonding process is completed in the above-mentioned step p27〇, a casting process is performed in step P280. In process? 290 completes the assembly of the solid-state imaging device. As with the above process, the large-scale manufacturing process of the solid-state imaging device according to the present invention and referring to the sectional view of the completed solid-state imaging device shown in FIG. 6 shows the following features.
參照根據本發明完成的固態攝像器件的斷面實例圖附 圖6 ’由金屬網導體(2 )形成的陶瓷包裝的中心部位設有 凹槽部(3 )。其凹槽部(3 )内用導電性粘合劑粘絲固定 有晶片(4 )。晶片(4 )的電極板(6 )用金屬線(7 )絲 粘結在金屬網導體(2 )上。並且,參照符號(8 )是焊接 於裸露在陶瓷包裝(1)的外側面的金屬網導體(2)斷面 的導電端子。 此%,片(4)的周圍形成透明、高硬度為一體的 ^部件(15b)。上述蓋部件(15b )的結構為,將平板破 璃的一侧通過工序P230蝕刻形成凹凸槽,通過蝕刻過程形 成的凹槽周圍接合固定在上述晶片(4)的周圍。Referring to the sectional example of the solid-state imaging device completed according to the present invention, FIG. 6 ′ is provided with a recessed portion (3) at the center of a ceramic package formed by a metal mesh conductor (2). A wafer (4) is fixed in the groove (3) with a conductive adhesive wire. The electrode plate (6) of the wafer (4) is bonded to the metal mesh conductor (2) with a metal wire (7) wire. The reference symbol (8) is a conductive terminal soldered to the cross section of the metal mesh conductor (2) exposed on the outer surface of the ceramic package (1). At this percentage, a transparent, high-hardness integral part (15b) is formed around the sheet (4). The cover member (15b) has a structure in which a concave and convex groove is formed by etching the side of the flat plate through step P230, and the periphery of the groove formed by the etching process is bonded and fixed around the wafer (4).
並且’上述盖部件(1 5 b )的材料可用玻璃,也可使 用有機板或塑膠等。 附圖7所示的與附圖6所示的實例不相同的另一製造工 序實例圖和完成的固態攝像器件的斷面實例圖。參照根據 本發明完成的固態攝像器件的斷面實例圖附圖7,陶瓷包In addition, the material of the cover member (1 5 b) may be glass, organic plate, or plastic. Fig. 7 shows another manufacturing process example different from the example shown in Fig. 6 and a sectional example view of the completed solid-state imaging device. Refer to FIG. 7 for a sectional example of a solid-state imaging device completed according to the present invention. FIG.
第11頁 508818 五、發明說明(7) 裝(1)上表面設置金屬網導體(2),中心部位設有凹槽 部(3 )。其凹槽部(3 )自,用導電性粘合劑粘絲固定晶 片(4 )。晶片(4 )的電極板(6 )將通過金屬線(7 )枯 結在金屬網導體(2 )。並且,參照符號(8 )是焊接在裸 露陶瓷包裝(1 )外側面的金屬網導體(2 )的斷面的導電 端子。 上述晶片(4 )的周圍形成一定高度的侧壁() 上述側壁(17a )上面形成透明、高硬度蓋部件(i5b ) 上述侧壁(17a)採用塑膠或有機板等易於成型的材料, 且設置有四角型餅狀以支撐蓋部件(15b)的托架,其托 架上面即側壁上形成透明、高硬度的一體型蓋部件&5b )0 上述的實例不同,在上述晶片(4)上面可採用透 明、高硬度平板型蓋部件(玻璃、有機板、塑膠等等)進 行粘絲處理的實例圖,具有如附圖8所示的斷面結構。Page 11 508818 V. Description of the invention (7) Installation (1) A metal mesh conductor (2) is provided on the upper surface, and a groove portion (3) is provided at the center. The recessed part (3) is used to fix the wafer (4) with a conductive adhesive wire. The electrode plate (6) of the wafer (4) will stagnate to the metal mesh conductor (2) through the metal wire (7). Also, reference numeral (8) is a conductive terminal of a cross section of a metal mesh conductor (2) welded to the outer surface of the bare ceramic package (1). A certain height side wall () is formed around the wafer (4), and a transparent, high-hardness cover member (i5b) is formed on the side wall (17a). The side wall (17a) is made of a plastic or organic plate and other easily moldable materials, and is provided. There is a square-shaped cake-shaped bracket to support the cover member (15b), and a transparent, high-hardness integrated cover member is formed on the bracket upper surface, that is, on the side wall. The above example is different, and it is on the wafer (4). An example of a transparent, high-hardness flat-type cover member (glass, organic board, plastic, etc.) for wire bonding can be used, and has a cross-sectional structure as shown in FIG. 8.
上述圖8所示的根據本發明實例的製造工序,如附圖9 所示,在工序P300中圖像感測器幹膠片入室内,與此同時 通過工序P310過程檢測蓋玻片的玻璃的品質,再通過工序 P320 ’在上述幹膠片的上表面用透明膠粘結蓋玻片。 之,,在工序P330中,為分離上述幹膠片中的各種圖 像感測器進行鑄模處理。通過上述工序P330過程進行鑄模 $理的各種圖像感測器(或稱為晶片),由工序P34〇置入 室内’經工序P35〇將晶片粘結於陶瓷包裝或pcB等。 通過工序P350,粘結在包裝上面的晶片的板材部 第12頁 508818The manufacturing process according to the example of the present invention shown in FIG. 8 is as shown in FIG. 9. In step P300, the image sensor wafer is put into the room, and at the same time, the quality of the cover glass is detected through the process of step P310. Then, the cover glass is adhered with transparent glue on the upper surface of the above-mentioned dry film through step P320 '. That is, in step P330, a mold process is performed to separate the various image sensors in the above-mentioned dry film. Various image sensors (or wafers) that are molded through the above-mentioned process P330 are placed in the room from process P34O 'and the wafer is bonded to a ceramic package or pcB, etc. through process P35. Plate part of the wafer bonded to the package through step P350 Page 12 508818
上進行枯絲處理。在上述工 通過工序P280過程進行鑄 五、發明說明(8) 分’經工序P360在包裝或PCB 序P 3 6 〇中結束粘絲過程之後, 造。 。如附圖1 0所示是附圖7 ,參照符號18是採用環氧 查看鑄造狀態如附圖1 Q所示 中所不的實例上進行鑄造處理的 樹脂的轉造工序。 周圍ϊϊίί鑄ΪΓ序·,可加強根據枯結工序的金屬絲 如W , 並防止因不純物造成的收率的低下。 法,二f據本發明的固態攝像裝置及其製造方 微塵物/ί1ί:比較’可防止進行鑄模處理時所?生的 域的污染:,可ίΐϊ;中產生灰塵等所造成的圖像傳感領 越依例進行了圖示說明’但沒有超 税圍中表現的發明的思想及領域的愔汶 下,可進行多種改進和變更。 m兄Dry silk treatment is performed on the surface. Casting is performed in the above process through the process P280. V. Description of the invention (8) The process is completed after the wire bonding process is finished in the packaging or PCB process P 3 6 through the process P360. . As shown in FIG. 10, it is shown in FIG. 7, and reference numeral 18 is an epoxy resin conversion process using epoxy resin to check the casting state as shown in FIG. 1Q. The surrounding process can strengthen the metal wire such as W according to the deadening process, and prevent the decrease in yield due to impurities. Method, the solid-state imaging device according to the present invention, and its manufacturing method. Dust / L1: Comparison ’can prevent mold processing? The pollution of the realm of the field: can be reduced; the image sensing collar caused by dust, etc. is illustrated as an example, but the idea of the invention and the field of the invention that are not shown in the super-tax environment are not as long as possible. Make multiple improvements and changes. m
第13頁 508818 圖式簡單說明 圖1為傳統固態攝像裝置的斷面圖; 圖2為傳統另一固態攝像裝置的斷面圖; 圖3為傳統固態攝像裝置的製造工序流線圖; 圖4為通過圖3工序製成的固態攝像器件的斷面實例 圖; 圖5為根據本發明所示的固態攝像裝置的製造工序流 線圖; 圖6為圖5中所示的工序大概製造工序實例和完成的固 態攝像器件的斷面實例圖; 圖7為與圖6所示的實例不相同實例的製造工序實例和 完成的固態攝像器件的斷面實例圖; 圖8為與圖6和圖7所示的實例不相同的按照另實例的 固態攝像器件斷面實例圖; 圖9為圖8中所示的固態攝像器件的製造工序流線圖; 圖1 0為圖5中所示的,經製造工序流線的,鑄造工序 結束狀態的固態攝像器件斷面實例。 【圖式標號說明】 1 ------陶曼包裝 2 ------金屬網導體 3 ------凹槽部 4 晶片 6 晶片的電極板 7 ------金屬絲Page 13 508818 Brief Description of Drawings Figure 1 is a sectional view of a conventional solid-state imaging device; Figure 2 is a sectional view of another conventional solid-state imaging device; Figure 3 is a flow chart of a manufacturing process of a conventional solid-state imaging device; Figure 4 3 is a sectional example view of the solid-state imaging device manufactured through the process of FIG. 3; FIG. 5 is a flow chart of the manufacturing process of the solid-state imaging device according to the present invention; And a sectional example view of the completed solid-state imaging device; FIG. 7 is a manufacturing process example different from the example shown in FIG. 6 and an example sectional view of the completed solid-state imaging device; FIG. 8 is a view similar to FIG. 6 and FIG. The example shown is different, and a sectional example of a solid-state imaging device according to another example is shown; FIG. 9 is a flow chart of the manufacturing process of the solid-state imaging device shown in FIG. 8; FIG. 10 is a view of the solid-state imaging device shown in FIG. An example of a cross-section of a solid-state imaging device with a streamlined manufacturing process and an end of the casting process. [Illustration of figure number] 1 ------ Tauman packing 2 ------ Metal mesh conductor 3 ------ Groove part 4 Chip 6 Chip electrode 7 ------ metallic line
第14頁 508818 圖式簡單說明 8 ------參考符號 9 ------内弓| 10 ------外弓| 11 ------弓丨線座 13------凹槽 15------蓋玻片 15b------蓋部件 17a------側壁 II·· 第15頁Page 14 508818 Brief description of the drawing 8 ------ Reference symbol 9 ------ Inner bow | 10 ------ Outer bow | 11 ------ Bow 丨 Thread stand 13- ----- Groove 15 ------ Cover slide 15b ------ Cover member 17a ------ Sidewall II ·· Page 15
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KR20020066010A (en) * | 2001-02-08 | 2002-08-14 | (주)해빛정보 | Solid state imaging device with integrated cover glass and fabrication method |
TWI275168B (en) | 2003-06-06 | 2007-03-01 | Sanyo Electric Co | Semiconductor device and method for making the same |
KR100747611B1 (en) | 2006-03-08 | 2007-08-08 | 삼성전자주식회사 | Micro element package and manufacturing method thereof |
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