TW508637B - Systems and methods for forming processing streams - Google Patents

Systems and methods for forming processing streams Download PDF

Info

Publication number
TW508637B
TW508637B TW90120208A TW90120208A TW508637B TW 508637 B TW508637 B TW 508637B TW 90120208 A TW90120208 A TW 90120208A TW 90120208 A TW90120208 A TW 90120208A TW 508637 B TW508637 B TW 508637B
Authority
TW
Taiwan
Prior art keywords
injection
flow rate
processing
delivery
solution
Prior art date
Application number
TW90120208A
Other languages
Chinese (zh)
Inventor
Roger Kaiser Jr
Steven T Bay
Original Assignee
Cfmt Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cfmt Inc filed Critical Cfmt Inc
Application granted granted Critical
Publication of TW508637B publication Critical patent/TW508637B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Systems and methods for processing electronic components having a vessel for holding electronic components and a carrier supply system operatively associated with the vessel for supplying a carrier stream to the vessel. An injection system is in fluid communication with the carrier supply system for introducing a process solution into die carrier supply system and a processor is operatively associated with the injection system. The processor generates data for process solution volume and injection pressure associated with the injection system and carrier stream flow rate associated with the carrier supply system as a function of time. A process solution injection rate as a function of process solution volume, injection pressure, and carrier stream flow rate is determined. Values for the injection pressure and the carrier stream flow rate for a predetermined process solution injection rate are the determined. The processor then controls injection of the process solution from the injection system into the carrier supply system at the predetermined process solution injection rate by adjusting the injection pressure and the carrier stream flow rate to the determined values.

Description

508637 A7 . __ B7 ___ 五、發明說明（/ ) 本發明之技術領域 本發明係相關於處理電子元件之系統及方法。本發明 特別是有關於形成處理資料流之系統及方法’該處理資料 流係用於處理電子元件，例如半導體基板。 發明背景 半導體基板-諸如晶圓、平面板及其它電子元件前驅物 -的濕式處理已廣泛運用於例如積體電路的製造過程。在較 佳情況下，實施濕式處理係使半導體基板能夠進行諸如擴 散、氧化、離子佈植、磊晶成長、化學氣相沉積、半圓矽 晶粒成長，或上述處理之結合等處理步驟。在濕式處理過 程中，半導體基板會和一系列的處理溶液接觸。例如，處 理溶液可用於蝕刻、淸除光阻、淸洗或沖洗半導體基板。 請參考美國專利第4,577,650號、第4,740,249號、第 4,738,272 號、第 4,856,544 號、第 4,633,893 號、第 4,778,532 號、第 4,917，123 號，以及歐洲專利 0 233 184， 上述專利具有相同的專利權受讓人；另參考Burkman等人 於半導體晶圓淸洗技術手冊（1993年由Noyes Publication Parkddge出版，並由Werner Kem主編)第111-151頁所撰 之濕式化學處理水淸洗製程CTiemica/ iVoceww-Jgweows C/e⑽，在此以引用的方式倂入上述 文獻所揭露之完整內容。 目前存在各種不同類型的系統可用於進行濕式處理。 舉例而言，半導體基板可在和外界隔絕的單槽系統(例如由 CFM Technologies公司所提供的Full_FlowTM系統）、開放 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱) ~ 瞧 (請先閱讀背面之注意事項再填寫本頁) ( — — — — III — I — — —— Ιιιιιι^ιιιιιί — — — —— — 508637 A7 五、發明說明（2 ) 式單槽系統、具有多個開放於大氣中之淸洗槽的多重開放 式淸洗槽系統（如濕式工作台）或旋轉噴洗系統等系統中進 行處理。 經過處理之後，半導體基板通常會進行乾燥處理。半 導體基板的乾燥處理可利用多種方式來進行，其目標在於 確保乾燥處理過程中不會產生污染。乾燥化的方法包括蒸 發、旋轉-沖洗器-乾燥器中的離心力、蒸氣或晶圓的化學 式乾燥處理，其中包括如美國專利第4,778,532號和第 4,911，761號所揭示的方法及設備。 半導體基板的濕式處理中所遭遇到的共同問題係在於 :對於單獨半導體基板的所有表面、在單批的各半導體基 板之間，以及以相同方式進行處理的各批半導體基板之間 ，獲得重複性的處理結果（亦即處理控制）。舉例而言，當 半導體晶圓被蝕刻以移除氧化物時，吾人希望單片晶圓之 所有表面以及同一批晶圓之間的蝕刻厚度大體上相同。除 此之外，吾人希望在相同蝕刻條件下進行處理的不同批晶 圓在触刻量上的變化(例如各批之間的差異)不至於過大。 傳統上而言，半導體濕式處理的處理控制係利用“監 測半導體基板”來進行。監測半導體基板係在生產半導體 基板的相同製造條件下所使用的設備中進行處理。而後， 監測半導體基板被測試，以保證製造處理是在其所指定的 限度之內執行。然而，使用監測半導體基板非常昂貴。例 如，在處理監測半導體基板時，使用監測半導體基板將會 消耗生產時間，而且耗費原始材料。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ··---------訂------ij 508637 A7 、 __B7_ _ 五、發明說明（3 ) 一種用以免除或減少使用監測半導體基板的方式係監 測處理槽的處理狀態，並且在處理過程中調整處理狀態。 舉例而言，在半導體基板的鈾刻處理中，吾人已知餽刻厚 度係蝕刻時間、溫度及蝕刻劑之化學品濃度等的函數。此 外，例如在淸洗過程中，諸如淸洗的時間、溫度、所使用 的超音波能量，以及化學品濃度等，均會影響半導體基板 的淸洗均勻性和效率。因此，處理結果可透過諸如溫度、 化學品濃度及處理時間等參數加以控制。雖然在大部分的 濕式處理系統中可以很容易地控制溶液溫度和處理時間， 但是在測量及控制化學品濃度上仍存在問題。因此，許多 努力已集中於發展用於決定化學品濃度之系統及方法，以 改良濕式處理系統中的處理控制。 舉例而言，授予Hanson等人(“Hanson”案)的美國專利 第5,472,516號即提出一種用於測量淸洗槽內之化學品濃 度的控制對策。在Hanson案中，APM淸洗溶液內的氫氧 化銨和過氧化氫的濃度係藉由測量APM淸洗溶液的酸鹼値 和導電度來監測。導電度係用於控制將氨水添加到淸洗槽 ，而酸鹼値則用於控制將過氧化氫添加到淸洗槽。此處理 過程可延長APM溶液的使用壽命。紅外線光譜監測器已被 用於監測開放式淸洗槽系統內的化學品濃度。 在開放式淸洗槽系統中-例如Hanson案所使用的系統-監測儀器可以很容易地設置於淸洗槽原處，以提供使用者 即時的化學品濃度資訊。然而，即使是在開放式淸洗槽系 統，原處的感應器可能無法精確地測量出化學品的濃度。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)508637 A7. __ B7 ___ V. Description of the Invention (/) Technical Field of the Invention The present invention relates to a system and method for processing electronic components. In particular, the present invention relates to a system and method for forming a processing data stream. The processing data stream is used to process electronic components, such as semiconductor substrates. BACKGROUND OF THE INVENTION Wet processing of semiconductor substrates, such as wafers, planar boards, and other electronic component precursors, has been widely used in, for example, the manufacturing process of integrated circuits. In a preferred case, the wet processing is performed to enable the semiconductor substrate to perform processing steps such as diffusion, oxidation, ion implantation, epitaxial growth, chemical vapor deposition, semicircular silicon grain growth, or a combination of the above processes. During wet processing, the semiconductor substrate is contacted with a series of processing solutions. For example, the processing solution can be used for etching, removing photoresist, cleaning, or rinsing a semiconductor substrate. Please refer to U.S. Patent Nos. 4,577,650, 4,740,249, 4,738,272, 4,856,544, 4,633,893, 4,778,532, 4,917,123, and European Patent 0 233 184, all of which have the same patent rights. See also Burkman et al. Semiconductor wafer cleaning technology manual (published in 1993 by Noyes Publication Parkddge and edited by Werner Kem), pages 111-151, wet chemical treatment water cleaning process CTiemica / iVoceww- Jgweows C / e⑽, which is hereby incorporated by reference in its entirety as disclosed in the above literature. There are various types of systems currently available for wet processing. For example, the semiconductor substrate can be isolated from the outside in a single-slot system (such as the Full_FlowTM system provided by CFM Technologies). The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) ~ See (Please read the notes on the back before filling this page) (— — — — III — I — — — Ιιιιιι ^ ιιιιιιίί — — — — — 508637 A7 V. Description of the invention (2) Single-slot system with Multiple open-type rinsing tank systems (such as wet benches) or rotary spray cleaning systems that are open to the rinsing tanks in the atmosphere are processed. After processing, semiconductor substrates are usually dried. Semiconductor substrates The drying process can be carried out in various ways, and the goal is to ensure that no pollution occurs during the drying process. The drying methods include evaporation, centrifugal force in the spin-rinser-dryer, steam or chemical drying of the wafer, These include methods and apparatus as disclosed in U.S. Patent Nos. 4,778,532 and 4,911,761. Wetness of semiconductor substrates A common problem encountered in processing is obtaining repetitive processing results for all surfaces of individual semiconductor substrates, between semiconductor substrates in a single batch, and between batches of semiconductor substrates processed in the same way ( (I.e., process control). For example, when a semiconductor wafer is etched to remove oxides, we want the thickness of the etch to be substantially the same on all surfaces of a single wafer and between the same batch of wafers. I hope that the change in the amount of contact (such as the difference between batches) of different batches of wafers processed under the same etching conditions will not be too large. Traditionally, the process control of semiconductor wet processing uses " Monitoring semiconductor substrates ". Monitoring semiconductor substrates are processed in the same equipment used to produce semiconductor substrates. Thereafter, the monitoring semiconductor substrates are tested to ensure that manufacturing processes are performed within their specified limits. However, the use of a monitoring semiconductor substrate is very expensive. For example, when handling a monitoring semiconductor substrate, Monitoring semiconductor substrates will consume production time and consume raw materials. 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) ··- -------- Order ------ ij 508637 A7, __B7_ _ V. Description of the invention (3) A method for eliminating or reducing the use of monitoring semiconductor substrates is to monitor the processing status of the processing tank, and Adjust the processing state during processing. For example, in uranium etch processing of semiconductor substrates, we know that the feed thickness is a function of etching time, temperature, and chemical concentration of the etchant. In addition, for example, during rinsing , Such as cleaning time, temperature, ultrasonic energy used, and chemical concentration, etc., will affect the cleaning uniformity and efficiency of semiconductor substrates. Therefore, the processing results can be controlled by parameters such as temperature, chemical concentration and processing time. Although the solution temperature and processing time can be easily controlled in most wet processing systems, there are still problems in measuring and controlling the concentration of chemicals. Therefore, many efforts have been focused on developing systems and methods for determining chemical concentrations to improve process control in wet processing systems. For example, U.S. Patent No. 5,472,516 to Hanson et al. ("Hanson") proposes a control strategy for measuring the concentration of chemicals in a washing tank. In the Hanson case, the concentrations of ammonium hydroxide and hydrogen peroxide in the APM wash solution were monitored by measuring the pH and conductivity of the APM wash solution. The conductivity is used to control the addition of ammonia to the rinsing tank, while the acid and alkali rhenium is used to control the addition of hydrogen peroxide to the rinsing tank. This process can extend the life of the APM solution. Infrared spectral monitors have been used to monitor chemical concentrations in open decanter systems. In open decanter systems—such as those used in the Hanson case—monitoring instruments can easily be set up in place of the decanter to provide users with real-time chemical concentration information. However, even in open decanter systems, the sensors in place may not be able to accurately measure the concentration of chemicals. 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

n n n n n n 0 i n n n I n n I n n n —.1 n n ϋ I 1 n n n I I n n n ϋ ϋ n n I 508637 A7 . — B7 —___ 五、發明說明（0 ) 例如’當存在一種以上的化學品時，由於其它位於槽內的 化學品（如強酸或強鹼）之存在或交互作用的緣故，使得吾 人可能無法精確地測量出化學品（如弱酸或弱鹼）的濃度。 由於經常需要一種以上的監測器來測量不同化學品的濃度 ’因而導致購置及維護監測器的成本增加’即如Hanson乙 案之情況。用於直接測量濃度的儀器-例如導電度計-亦非 可靠的選擇。 在決定和控制單次通過濕式處理槽內的化學品濃度時( 此處溶液通過淸洗槽一次），可能會出現進一步的問題。舉 例而言，在許多單一通過濕式處理槽中，濃度測量裝置被 放置於槽內的位置將會瓦解處理溶液的流動模式，因而使 處理溶液與半導體基板之間的接觸不均勻。將測量裝置放 置於處理槽的上游或下游係其中一種解決方式。然而，當 處理溶液中含有化學品的混合物時，此時極可能需要一種 以上的測量裝置，從而增加購置及維護多個測量裝置的成 本。此外，由於各化學品之間的交互作用或儀器可靠性問 題的緣故，甚至不可能準確地測量處理溶液內各種化學品 的濃度。 因此，吾人需要一種較簡易的系統及方法，以用於決 定及控制濕式處理系統所使用之處理流的化學品濃度。此 種系統及方法應避免將非常不同於所需化學品比率的化學 品混合物輸送到處理槽，以提昇處理的可靠度。此外，此 種系統及方法應爲自動化操作。 發明槪要 7 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐) 觀 ----- (請先閱讀背面之注意事項再填寫本頁) I · n n n n n n n 一：OJ§ I n ^ 508637 A7 、 _B7 __ 五、發明說明（t ) 在本發明之一構想中，其係有關於一種用於處理電子 元件之系統，其至少包含一槽及一輸送供應系統’該槽係 用於容納電子元件，而該輸送供應系統係操作性連結於該 槽，用以將輸送流供應到該槽。注射系統係以流體連通於 該輸送供應系統，用以將處理溶液導入該輸送供應系統。 在一具體實施例中，該注射系統包含一或多容器或注射管 ，用於容納一或多處理溶液，並將該等處理溶液注入該輸 送供應系統。該注射系統亦可視情況選擇包含一閥門’其 定位於該注射管或容器與該輸送供應系統之間’並用於調 節來自該等注射管或容器之處理溶液的流動速率。一處理 器係操作性連結於該注射系統。當該注射系統包含數個注 射管或容器時，該處理器係操作性連結於該等注射管或容 器，以個別地調節伴隨各等注射管或容器的注射率。該處 理器係產生伴隨該注射系統的處理溶液體積和注射壓力等 資料，以及伴隨以時間爲函數之輸送供應系統的輸送流動 速率；決定一處理溶液注射率，其爲處理溶液體積、注射 壓力及輸送流動速率等之函數；決定在一預定處理溶液注 射率之下的注射壓力及輸送流動速率的數値；以及在該預 定處理溶液注射率之下，藉由將該注射壓力和該輸送流動 速率調節到該等預定數値，而從該注射系統將該處理溶液 注入該輸送供應系統。當該注射系統包含用於調節該等處 理溶液之流動速率的閥門時，該處理器可視情況選擇操作 性連結於該等閥門，以自動地調節該等閥門。 在本發明之另一構想中，其係有關用於處理電子元件 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ---- (請先閱讀背面之注意事項再填寫本頁) i訂---------線 508637 A7 _____B7_________ 五、發明說明（έ ) 之方法，其至少包含下列步驟：產生伴隨一注射系統之處 理溶液體積、注射壓力及/或注射控制閥的位置等資料，以 及伴隨以時間爲函數之輸送供應系統的輸送流動速率。接 著，處理溶液注射率係被決定並以處理溶液體積、注射壓 力、注射控制閥的位置及輸送流率等爲函數。接著，在一 預定的處理溶液注射率之下，該注射壓力値、該注射控制 閥的位置及/或輸送流率等的數値係被決定。接著，在該預 定處理溶液注射率之下，藉由將該注射壓力、該注射控制 閥的位置及/或輸送流率調節到該等預定數値，而從該注射 系統將該處理溶液注入該輸送供應系統。 鑑於揭露內容及所附申請專利範圍，凡熟習此項技藝 之人士當可明瞭本發明之其它特徵及具體實施例。 圖式簡單說明 經由參照所附詳細說明和下列圖式，凡熟習此項技藝 之人士當可更明瞭本發明之各項目的及優點，其中： 圖1爲根據本發明用於控制電子元件之濕式處理的具 體實施例槪要圖； 圖2顯以加侖爲體積單位之過氧化氫作爲以分鐘爲時 間單位之函數的體積，其係根據本發明由高度_時間-壓力 資料所決定； 圖3顯示PSIG內之氮氣注射壓力測量値，其係以分 鐘爲時間單位之函數； 圖4顯示根據本發明由圖2及圖3之資料所決定的過 9 本紙張尺度適用中國國家標‘ (CNS)A4規格（21G X 297公楚) ""~' ---- (請先閱讀背面之注意事項再填寫本頁) II訂——^------線」 508637 A7 、 _B7 _ 五、發明說明（7 ) 氧化氫注射率，其係以克/每分鐘(GPM)爲單位，且在流動 速率13 GPM之去離子水流動速率下，在PSIG中之氮氣壓 力的函數；及 圖5顯示過氧化氫注射率，其係以GPM爲單位，且 分別在流動速率5、9、13、17及21 GPM之去離子水流動 速率下，在PSIG中之氮氣壓力的函數。 元件符號說明 10 輸送供應系統 11 處理槽 12 注射系統 13 處理器 16 容器 17 加壓氣體 19 輸送流控制閥 20 流量計 21溫度計 24 注射管路 25注射管 27 氣體源 28 注射範圍閥 29 控制閥 30 管路 31 壓力調節器 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -m n n n n m n I I n .線l_----------.——Η—— 508637 A7 B7 五、發明說明（β ) 32 壓力計 33 感應器 35 接收器 37 控制器 42 閥門 44 第一璋 46 第二璋 48 閥門 49 排水管路 (請先閱讀背面之注意事項再填寫本頁) _佳實施例詳細說明 訂---------線丨- 本發明提供一種用於由一流體輸送流及一或多具有已 知處理化學品濃度之處理溶液形成一處理流之系統及方法 。當處理溶液結合於輸送流而形成處理流時，可藉由控制 處理溶液的注射率以及輸送流的流動速率來調節處理流中 的處理化學品濃度。在此情況下，不需要直接測量處理流 中的處理化學品濃度(但在濕式處理過程當中，其仍然透過 如導電度計之類的儀器進行測量）。 本發明之系統及方法尤其適用於控制半導體基板之濕 式處理。特別是，本發明之系統及方法適用於任何半導體 基板之濕式處理程序，而其中處理流中含有一或多種必要 的處理化學品。“濕式處理”係指半導體基板與一或多處 理流接觸，並以所欲方式來處理半導體基板。在此所定義 的“濕式處理”可包括諸如處理、洗淨或乾燥化半導體基 11 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297 ' 〜 508637 A7 、 _______B7__ 五、發明說明（？） 板。在典型情況中，此類濕式處理係實施用以使半導體基 板準備進行諸如擴散、離子佈植、氧化、磊晶成長、化學 氣相沉積、半圓矽晶粒成長或其組合等處理步驟。 處理流係指濕式處理過程中的任何流體輸送流， 其與半導體基板接觸，且包含一或多種處理化學品。“化 學品”係指在處理流中協助處理（如處理或淸洗）半導體基 板所使用的任何化學藥劑。 圖1係槪要圖示根據本發明用於形成處理流的濕式處 理系統。圖1之濕式處理系統包含一輸送供應系統10，其 操作性連接於一處理槽11，並將一輸送流供應到該處理槽 11。一注射系統12係以流體連通於輸送供應系統10，其 將一或多種處理溶液注入輸送流。該濕式處理系統另包含 一處理器13，其連接於注射系統12和輸送供應系統10， 並用於調節處理流被注入輸送流的流速。 適用於本發明的處理槽11包含任何使位於槽內之一或 多個半導體基板(即一批）能夠接觸處理流的容器。例如， 合適的處理槽包括單槽系統、多槽系統，以及噴灑淸洗系 統等。請參考例如在半導體晶圓淸洗技術手冊中由Werner Kern所撰之第一章：半導體晶圓污染及淸洗技術之槪論及 演變，以及由 Don C. Burkman、Donald Deal、Donald C. Grant及Charlie A· Peterson等人所撰之第三章：水淸洗處 理(該技術手冊係由Werner Kern主編，並於1993.年由美 國紐澤西州之Noyes Publication Parkridge出版）；另參考 由Hiroyuki Horiki和Takao Nakazawa於超淸潔技術手冊（ 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · MM MM W MV HIM^I n n 1 線丨· 508637 A7 , ____B7_^_ 五、發明說明（/。） 由Tadahiro Ohmi主編，Marcel Dekker出版)第一冊中所撰 之濕式蝕刻淸洗，以及授予Olesen等人之美國專利第 5,656,097號。在此以引用方式倂入上述著作及專利之完整 揭露內容。 在本發明之較佳具體實施例中，半導體基板係容納於 單一處理槽。此外，單一處理槽之運作方式最好使得處理 流僅通過處理槽一次（亦即單次通過處理槽）。在此情況下 ，處理流內的化學品濃度即可在處理流與半導體基板接觸 的整個時間過程中更準確地保持。以較佳情況而言’單槽 系統包括美國專利第4,778,532號、第4,917，123號、第 4,911，761 號、第 4,795,497 號、第 4,899,767 號、第 4,984,597 號、第 4,633,893 號、第 4,738,272 號、第 4,577,650號等專利所揭露的系統，在此以引用方式倂入上 述專利之完整內容。如CFM Technologies公司所製造的 Full-FlowTM槽即爲一種可購得的較佳單槽系統。此類系統 之所以爲較佳的原因在於其在設計上可以很容易地讓一連 串的處理流能夠一次通過處理槽而處理一批半導體基板。 輸送供應系統10係爲任何一種能夠在經過控制之流動 速率下將一或多輸送流供應到處理槽11的設備。在一具體 實施例中，該輸送供應系統10包含各式流出除氣去離子水 的傳統源中的任何一種。在圖1之具體實施例中，輸送供 應系統10包含儲存槽或容器16，其配備有加壓氣體17， 以容納輸送流並將輸送流導入處理槽11。輸送供應系統1〇 另可視情況選擇納入幫浦（未示於圖中），用以將輸送流傳 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · 1 n 1 I I n n a n n ϋ ϋ I n n I I n n ϋ ϋ I— n n n n n n n n n n *1 ϋ I n n ϋ n ' 508637 A7 、 B7_ 五、發明說明（) 3胃__檜11。由於濕式處理經常使用由不同輸送流所形 $的處_流，因此本發明之輸送供應系統10可視情況選擇 納入兩或多個儲存槽16，以容納不同的輸送流。在圖1所 w之具體實施例中，其配有兩個儲存槽16。 該輸送供應系統10另包含輸送流控制閥19，以調節 輸送流的流動速率。以較佳情況而言，輸送供應系統10能 夠將輸送流供應到處理槽11 ;其中，在輸送流控制閥19 固定位置之處的流率變化小於約1%，且變化程度小於約 〇·5%更佳。因此，最好納入流量計20，藉以提供反饋來控 制閥19的位置；亦即，輸送流的流動速率資料係由流量計 2〇來決定，並傳送到處理器13而用以調整閥門19的位置 〇 流量計20係配置當輸送流離開管路30內的輸送供應 系統10時用於監測輸送流的流動速率。雖然各式傳統的流 量計適用於本發明，但流量計20最好適用於測量輸送流的 瞬時（或即時）流動速率。“瞬時”係指流率測量値與未來 可用之測量値之間實質上最好沒有延遲。舉例而言，適用 於測量輸送流之流動速率的儀器包括高度探針、蹼輪式流 量計、超音波流量計、漩渦流量計、旋轉流量計或磁場流 量計。例如，由流量計所取得的流動速率可爲質量流動速 率或體積流動速率。選擇的流量計20之百分率誤差最好約 1%或更小，而約0.2%或更小則更佳。用於測量輸送流之 流動速率的最佳設備係超音波移動時間流量計。 若配有兩個儲存槽16,則其通常係用於熱水及冷水供 14 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐) (請先闉讀背面之注意事項再填寫本頁) ·· 508637 A7 B7 五、發明說明（A ) 應系統。在此情況下，連接於閥門19的流量計20係用於 混合出適當的水流動速率和水溫。溫度計21可用於監測管 路30內之輸送流的溫度。 該輸送供應系統10另可視情況選擇配備除氣設備，以 便在輸送流被導入該處理槽11之前先進行除氣。此外’當 輸送流爲去離子水時，輸送供應系統10則可以納入用於去 除水中離子的設備，例如離子交換圓柱體。 該輸送流最好爲相容於所使用之處理化學品的溶劑， 並可將處理化學品輸送到半導體基板的表面上以供處理。 輸送流亦可在濕式處理過程中當作淸洗溶液。去離子水係 較佳的輸送流。舉例而言，其它輸送流包括有機溶劑、有 機溶劑之混合物、有機溶劑與水之混合物、臭氧化水、無 機溶劑、無機溶劑之混合物、無機溶劑與水之混合物，或 前述之組合。適用的有機溶劑包括甲醇、乙醇、1-丙醇、 異丙醇、η-丁醇、secbutanol、特丁醇（tertbutanol)等醇類， 或特戊醇(tert-amyl alcohol)、丙酮、氰化甲院(acetonitrile) 、六氟丙酮(hexafluoroacetone)、硝基甲院、乙酸、丙酸、 乙二醇單甲醚(ethylene glycol mono_methyl ether)、二氟乙 院（difluoroethane)、乙酸乙酯（ethyl acetate)、乙酸異丙酯 (isopropyl acetate)、1，1，2-三氯-1，2,2-三氟乙院（1，1，2-trichloro-1 ?2,2-trifluoroethane) 、 1,2-二氯乙院(1,2- dichloroethane)、三氯乙院（trichloroethane)、perfluoro-2-butyltetrahydrofuran、perfluoro-1,4-dimethylcyclohexane， 或前述之組合。較佳的有機溶劑爲C:至C6醇類，例如甲 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 (請先閱讀背面之注意事項再填寫本頁)nnnnnn 0 innn I nn I nnn —. 1 nn ϋ I 1 nnn II nnn ϋ ϋ nn I 508637 A7. — B7 —___ V. Description of the invention (0) For example, 'When more than one chemical is present, The presence or interaction of chemicals (such as strong acids or bases) in it may make it impossible for us to accurately measure the concentration of chemicals (such as weak acids or bases). Since more than one type of monitor is often needed to measure the concentration of different chemicals, 'the cost of purchasing and maintaining the monitor is increased', as in the case of Hanson B. Instruments for direct concentration measurement, such as conductivity meters, are also not a reliable choice. Further problems may arise when deciding and controlling the concentration of chemicals in a single pass through a wet processing tank, where the solution is passed through the rinsing tank once. For example, in many single-pass wet processing tanks, where the concentration measurement device is placed in the tank will disrupt the flow pattern of the processing solution, thereby making the contact between the processing solution and the semiconductor substrate uneven. Placing the measuring device upstream or downstream of the treatment tank is one of the solutions. However, when processing a mixture of chemicals in a solution, it is highly likely that more than one measuring device will be required at this time, thereby increasing the cost of purchasing and maintaining multiple measuring devices. In addition, it is not even possible to accurately measure the concentration of various chemicals in the processing solution due to interactions between the chemicals or problems with the reliability of the instrument. Therefore, we need a simpler system and method for determining and controlling the chemical concentration of the process stream used in the wet processing system. Such a system and method should avoid conveying a chemical mixture that is very different from the required chemical ratio to the treatment tank to increase the reliability of the treatment. In addition, such systems and methods should be automated. Invention 7: This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm). View ----- (Please read the precautions on the back before filling this page) I · nnnnnnn I: OJ§ I n 508637 A7, _B7 __ V. Description of the invention (t) In one aspect of the present invention, it relates to a system for processing electronic components, which includes at least a tank and a conveying and supplying system. The electronic component is accommodated, and the conveying and supplying system is operatively connected to the groove for supplying a conveying stream to the groove. The injection system is in fluid communication with the transport supply system for introducing a treatment solution into the transport supply system. In a specific embodiment, the injection system includes one or more containers or injection tubes for containing one or more processing solutions and injecting the processing solutions into the delivery supply system. The injection system may optionally include a valve 'located between the injection tube or container and the delivery supply system' and used to adjust the flow rate of the treatment solution from the injection tubes or containers. A processor is operatively connected to the injection system. When the injection system includes several injection tubes or containers, the processor is operatively connected to the injection tubes or containers to individually adjust the injection rate accompanying each of the injection tubes or containers. The processor generates data such as the volume of the processing solution and the injection pressure accompanying the injection system, and the transport flow rate accompanying the transportation supply system as a function of time; determines a processing solution injection rate, which is the volume of the processing solution, the injection pressure, and Functions of conveying flow rate, etc .; determining the injection pressure and the number of conveying flow rates below a predetermined treatment solution injection rate; and under the predetermined treatment solution injection rate, by using the injection pressure and the conveying flow rate It is adjusted to the predetermined number, and the processing solution is injected from the injection system into the conveyance supply system. When the injection system includes valves for adjusting the flow rate of the processing solutions, the processor may optionally be operatively connected to the valves to automatically adjust the valves. In another idea of the present invention, it is related to the processing of electronic components. 8 The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) ---- (Please read the precautions on the back before (Fill in this page) I order --------- line 508637 A7 _____B7_________ 5. The method of invention description (hand) at least includes the following steps: generating the volume of the treatment solution accompanying an injection system, the injection pressure and / or Information such as the position of the injection control valve, and the delivery flow rate with the delivery supply system as a function of time. Next, the injection rate of the processing solution is determined and is a function of the volume of the processing solution, the injection pressure, the position of the injection control valve, and the delivery flow rate. Then, under a predetermined injection rate of the processing solution, the injection pressure 注射, the position of the injection control valve, and / or the number of the conveying flow rate are determined. Then, under the predetermined treatment solution injection rate, the treatment solution is injected into the injection system from the injection system by adjusting the injection pressure, the position of the injection control valve, and / or the delivery flow rate to the predetermined numbers. Conveying supply system. In view of the contents of the disclosure and the scope of the attached patent application, those skilled in the art can understand other features and specific embodiments of the present invention. Brief description of the drawings By referring to the attached detailed description and the following drawings, those skilled in the art can better understand the various objects and advantages of the present invention, in which: Figure 1 is used to control the humidity of electronic components according to the present invention. Figure 2 shows the specific embodiment of the formula; Figure 2 shows the volume of hydrogen peroxide in gallons as a unit of volume as a function of time in minutes, which is determined by the height_time-pressure data according to the present invention; Figure 3 Shows the nitrogen injection pressure measurement in PSIG 値, which is a function of time in minutes. Figure 4 shows that according to the present invention, 9 paper sizes are determined by the national standard (CNS) A4 specifications (21G X 297). Quot; " " ~ '---- (Please read the precautions on the back before filling in this page) Order II-^ ------ line "508637 A7 _B7 _ V. Description of the invention (7) The injection rate of hydrogen oxide is a function of the nitrogen pressure in PSIG under the flow rate of deionized water at a flow rate of 13 GPM in units of grams per minute (GPM); and the graph; 5 shows the hydrogen peroxide injection rate, which is based on GPM as Position, and in the water flow rate to the flow rate of 21 GPM and 5,9,13,17 ions, respectively, in function of nitrogen pressure in the PSIG. Description of component symbols 10 Delivery and supply system 11 Processing tank 12 Injection system 13 Processor 16 Container 17 Pressurized gas 19 Delivery flow control valve 20 Flow meter 21 Thermometer 24 Injection line 25 Injection tube 27 Gas source 28 Injection range valve 29 Control valve 30 Pipe 31 Pressure regulator 10 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) -mnnnnmn II n .Wire l _---- ------.—— Η—— 508637 A7 B7 V. Description of the invention (β) 32 Pressure gauge 33 Sensor 35 Receiver 37 Controller 42 Valve 44 First 璋 46 Second 璋 48 Valve 49 Drain line (Please read the precautions on the back before filling this page) _Best embodiment detailed description Order --------- Line 丨-The present invention provides a method for the Systems and methods for treating a chemically concentrated treatment solution to form a treatment stream. When the processing solution is combined with the transport stream to form a processing stream, the concentration of the processing chemical in the processing stream can be adjusted by controlling the injection rate of the processing solution and the flow rate of the transport stream. In this case, it is not necessary to directly measure the process chemical concentration in the process stream (but it is still measured by an instrument such as a conductivity meter during wet processing). The system and method of the present invention are particularly suitable for controlling wet processing of semiconductor substrates. In particular, the system and method of the present invention are applicable to any wet processing procedure for semiconductor substrates, where the processing stream contains one or more necessary processing chemicals. "Wet processing" means that a semiconductor substrate is contacted with one or more processing streams and the semiconductor substrate is processed in a desired manner. The "wet processing" as defined herein may include, for example, processing, washing, or drying of semiconductor substrates. 11 ^ Paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 '~ 508637 A7, _______B7__ V. Description of the invention ( ?) Plates. In typical cases, such wet processes are implemented to prepare semiconductor substrates such as diffusion, ion implantation, oxidation, epitaxial growth, chemical vapor deposition, semi-circular silicon grain growth, or a combination thereof. Processing step. A processing stream is any fluid transport stream in a wet process that is in contact with a semiconductor substrate and contains one or more processing chemicals. "Chemicals" means assisting processing (such as processing or plutonium) in a processing stream. (Washing) any chemical used in the semiconductor substrate. FIG. 1 is a diagram illustrating a wet processing system for forming a processing stream according to the present invention. The wet processing system of FIG. 1 includes a transport supply system 10 which is operatively connected In a processing tank 11, a transport stream is supplied to the processing tank 11. An injection system 12 is in fluid communication with the transport supply system 10, which supplies one or more places The solution is injected into the conveying stream. The wet processing system further includes a processor 13 connected to the injection system 12 and the conveying supply system 10 and used to adjust the flow rate of the processing stream being injected into the conveying stream. A processing tank 11 suitable for the present invention contains Any container that allows one or more semiconductor substrates (i.e., a batch) located in a tank to contact the processing stream. For example, suitable processing tanks include single tank systems, multiple tank systems, and spray cleaning systems. Please refer to, for example, Chapter 1 of the Semiconductor Wafer Cleaning Technology Handbook by Werner Kern: Introduction and Evolution of Semiconductor Wafer Contamination and Cleaning Technology, and by Don C. Burkman, Donald Deal, Donald C. Grant, and Charlie A · Peterson et al. Chapter 3: Water Washing (This technical manual was edited by Werner Kern and published in 1993. by Noyes Publication Parkridge, New Jersey, USA); see also by Hiroyuki Horiki and Takao Nakazawa Yu Chao Jie Jie Technical Manual (12 paper sizes are applicable to Chinese National Standard (CNS) A4 (210 X 297 mm)) (Please read the precautions on the back before filling in this Page) · MM MM W MV HIM ^ I nn 1 line 丨 · 508637 A7, ____ B7 _ ^ _ V. Description of the Invention (/.) Edited by Tadahiro Ohmi, published by Marcel Dekker) Wet Etching and Washing in Volume 1 And U.S. Patent No. 5,656,097 to Olesen et al., Which is hereby incorporated by reference in its entirety for disclosure. In a preferred embodiment of the present invention, the semiconductor substrate is housed in a single processing tank. In addition, a single processing tank is preferably operated in such a way that the processing stream passes through the processing tank only once (ie, a single pass through the processing tank). In this case, the chemical concentration in the processing stream can be more accurately maintained throughout the time that the processing stream is in contact with the semiconductor substrate. In the best case, the 'single tank system includes U.S. Patent Nos. 4,778,532, 4,917,123, 4,911,761, 4,795,497, 4,899,767, 4,984,597, 4,633,893, 4,738,272, and The system disclosed in patents such as 4,577,650 is hereby incorporated by reference in its entirety. Full-FlowTM cells, such as those manufactured by CFM Technologies, are one of the preferred single cell systems available. The reason why such a system is better is that it is designed to allow a series of processing streams to pass through a processing tank at a time to process a batch of semiconductor substrates. The transport supply system 10 is any device capable of supplying one or more transport streams to the processing tank 11 at a controlled flow rate. In a specific embodiment, the delivery supply system 10 includes any of a variety of conventional sources that flow out of degassed deionized water. In the specific embodiment of FIG. 1, the delivery supply system 10 includes a storage tank or container 16 which is equipped with a pressurized gas 17 to contain the delivery stream and direct the delivery stream into the processing tank 11. Conveying and supply system 10 can also be optionally included in pumps (not shown in the figure) to spread the conveyance. 13 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) (please read the back first) Please note this page before filling in this page) · 1 n 1 II nnann ϋ ϋ I nn II nn ϋ ϋ I— nnnnnnnnnn * 1 ϋ I nn ϋ n '508637 A7, B7_ V. Description of the invention () 3 Stomach__ 桧 11. Since the wet process often uses the flow formed by different conveying streams, the conveying supply system 10 of the present invention may optionally incorporate two or more storage tanks 16 to accommodate different conveying streams. In the embodiment shown in FIG. 1, it is provided with two storage tanks 16. The delivery supply system 10 further includes a delivery flow control valve 19 to adjust the flow rate of the delivery flow. In a preferred case, the conveying supply system 10 can supply the conveying flow to the processing tank 11; wherein the change in the flow rate at a fixed position of the conveying flow control valve 19 is less than about 1%, and the degree of change is less than about 0.5 % Is better. Therefore, it is better to incorporate the flow meter 20 to provide feedback to control the position of the valve 19; that is, the flow rate data of the delivery stream is determined by the flow meter 20 and transmitted to the processor 13 to adjust the valve 19 The position 0 flowmeter 20 is configured to monitor the flow rate of the transport stream when the transport stream leaves the transport supply system 10 in the pipeline 30. Although a variety of conventional flow meters are suitable for the present invention, the flow meter 20 is preferably suitable for measuring the instantaneous (or instantaneous) flow rate of a conveying stream. "Instantaneous" means that there is preferably substantially no delay between the flow rate measurement 値 and the measurement available in the future. For example, instruments suitable for measuring the flow rate of a conveying stream include an altitude probe, a web wheel flow meter, an ultrasonic flow meter, a vortex flow meter, a rotary flow meter, or a magnetic field flow meter. For example, the flow rate obtained by a flow meter can be a mass flow rate or a volume flow rate. The percentage error of the selected flow meter 20 is preferably about 1% or less, and more preferably about 0.2% or less. The best equipment for measuring the flow rate of a conveying stream is an ultrasonic moving time flow meter. If it is equipped with two storage tanks 16, it is usually used for hot and cold water supply. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before reading) (Fill this page) ·· 508637 A7 B7 V. Description of Invention (A) Application system. In this case, the flow meter 20 connected to the valve 19 is used to mix an appropriate water flow rate and water temperature. The thermometer 21 can be used to monitor the temperature of the transport stream in the pipe 30. The conveying and supplying system 10 may optionally be equipped with a degassing device, so that the degassing is performed before the conveying stream is introduced into the processing tank 11. In addition, when the transport stream is deionized water, the transport supply system 10 may include a device for removing ions in the water, such as an ion exchange cylinder. The transport stream is preferably a solvent compatible with the processing chemicals used, and can transport the processing chemicals onto the surface of the semiconductor substrate for processing. The transport stream can also be used as a washing solution during wet processing. Deionized water is the preferred transport stream. For example, other transport streams include organic solvents, mixtures of organic solvents, mixtures of organic solvents and water, ozonated water, inorganic solvents, mixtures of inorganic solvents, mixtures of inorganic solvents and water, or a combination of the foregoing. Suitable organic solvents include methanol, ethanol, 1-propanol, isopropanol, η-butanol, secbutanol, tertbutanol and other alcohols, or tert-amyl alcohol, acetone, cyanation Acetonitrile, hexafluoroacetone, nitrofluoroacetone, acetic acid, propionic acid, ethylene glycol mono_methyl ether, difluoroethane, ethyl acetate ), Isopropyl acetate, 1,1,2-trichloro-1,2,2-trifluoroethane (1,1,2-trichloro-1? 2,2-trifluoroethane), 1, 2-dichloroethane, trichloroethane, perfluoro-2-butyltetrahydrofuran, perfluoro-1,4-dimethylcyclohexane, or a combination thereof. The preferred organic solvents are C: to C6 alcohols, such as A. 15 This paper is sized for China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

508637 A7 , _____B7___ 五、發明說明（，）） 醇、乙醇、1-丙醇、異丙醇、n-丁醇、sect)Utanol、特丁醇 (tertbutanol)，或特戊醇(tert-amyl alcohol)、戊醇(pentanol) 、己醇(hexanol)，或前述之組合。 適用於本發明的注射系統12類型係爲任何能夠在控制 流動速率下將一或多種處理溶液注入於管路30內之輸送流 而形成一處理流的系統。在較佳具體實施例中，注射系統 12包含注射岐管，其透過一或多條注射管路24而使一或 多種處理溶液與輸送流混合。注射管25配用於該等一或多 種溶液之各者。處理溶液可爲單一化學溶液或含有化學品 混合物之溶液。各注射管25係操作性連接於一氣體源27 ’例如氮氣源，使得來自於氣體源27的氣體可被供應到注 射管25，以產生可用於將注射管25內之處理溶液排出的 氣體柱。因此，處理溶液之流動速率可藉由調節注射管25 內之氣體柱的壓力（即注射壓力）來加以控制。注射範圍閥 28-例如像統的針狀閥-可視情況選擇配置於注射管25與一 輸送流管路30之間，以進一步調節處理溶液注入輸送流之 注射率的可用範圍。另一種方式爲，一固定開口可被用以 提供固定的注射率範圍。一壓力調節器31最好倂用於各注 射管25，藉以控制氣壓，而一壓力計32可視情況選擇配 置於各注射管25，用以測量注射壓力。在較佳情況下，注 射系統12具有設置於各注射管路24的控制閥29，其可開 啓或關閉，以容許特定處理溶液流入管路30內的輸送流。 控制閥29可由處理器13加以監測及控制。 注射系統12包含任何各的傳統感應器33，以用於偵 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ------訂-- ------· I 一 508637 A7 - --—«— B7___ 五、發明說明（/★) 測各注射管25內的處理溶液的高度。在一具體實施例中， 感應器33係爲全長電容高度感應器。當可瞭解的是，爲使 最終的處理流達到足夠濃度範圍所需的注射壓力範圍會隨 著所使用的特定系統而改變，但在約5至50 PSIG之間變 化的注射壓力-最好介於14 PSIG與40 PSIG之間-通常即已 足夠。凡熟習此項技藝之人士當可得知，存在各式的注射 系統能夠將一或多種處理溶液與輸送流結合而形成處理流 〇 一抽水閥可視情況選擇地被設置以將處理流導引到排 水管路’以使輸送系統能夠利用處理溶液加以淸洗。在操 作當中可藉由開啓抽水閥並關閉控制閥而將處理流導引到 排水管路。當有足夠體積的處理流通過抽水閥而使輸送供 應系統可充分地被淸洗之後，控制閥會開啓而抽水閥則會 關閉’以便將處理流導引到處理槽。 根據本發明所形成的處理流可用於處理處理槽11內的 半導體基板。運用於處理半導體基板的處理流範例包括淸 洗溶液、蝕刻溶液或淸除光阻的溶液。此等溶液含有一或 多種化學品而用於達成所欲之處理。 舉例而言，淸洗溶液通常包含能有效淸除粒子、金屬 離子、或如臘狀物、殘留的硏磨劑或油脂等有機物。用於 淸洗的化學品通常爲腐蝕劑，例如酸或鹼。例如，適用於 淸洗的酸包括硫酸、鹽酸、硝酸或王水。適用的鹼則包括 氫氧化銨。淸洗溶液當中所需的腐蝕劑濃度係取決於所選 擇的特定腐蝕劑以及所欲淸洗的程度而定。此等腐蝕劑可 17 本紙張尺度適用中ΐ國家標準（CNS)A4規格（210 X 297公釐) ' " (請先閱讀背面之注意事項再填寫本頁) · n n n n H ϋ n f ·1 I n n I ϋ I I n 1 n n n n 1 n n n n n n n n n n ϋ ϋ n n I . 508637 A7 -——— ---~—--5L______ 五、發明說明（) 與氧化劑-例如臭氧或過氧化氫-共同使用。 “APM”與”HPM”係較佳的淸洗溶液，“APM”包含水、 氨水和過氧化氫；“HPM”則包含水、過氧化氫和鹽酸。 APM溶液之水：h202 : NH4OH的典型容積百分率約5 : 1 ·· 1至200 ·· 1 : 1。HPM溶液之水：h202 : HC1的典型容 積百分率約5 : 1 : 1至1000 : 0 : 1。 適用的蝕刻溶液所包含的化學藥劑能夠淸除氧化物。 舉例而言’一般常用的蝕刻劑包括氫氟酸、以氫氧化錶緩 衝之氫氟酸、氟化銨，或其它產生氫氟酸溶液的物質。舉 例而言，含有飩刻溶液的氫氟酸所包含之水：HF的容積百 分率約從4 : 1到1〇〇〇 : 1。用於淸除光阻的溶液舉凡包括 硫酸溶液、以及氧化物質，諸如過氧化氫、臭氧或其組合 0 除了用於處理半導體基板的處理流之外，根據本發明 之處理流可用於淸洗。“淸洗流體”係用於弄濕半導體基 板而爲後續濕式處理步驟預作準備，並用於淸除先前的處 理流，以及/或淸除其它諸如來自半導體基板之粒子等污染 物。在選擇淸洗流體時，應考慮的因素包括··被淸洗之半 導體基板的表面特性、存在於半導體基板上的污染物性質 ，以及被淸洗之處理流的性質。適用的淸洗流體包括上述 適於做爲輸送流、臭氧、界面活性劑或其組合等之流體。 凡熟習此項技藝之人士當可瞭解，存在各式處理流可 在濕式處理過程中使用。其它處理流已揭示於Werner Kem 等人於麗處理所撰之“化學蝕刻” 一文第401-496頁， 18 尺度適用中國國家標準(CNS)A4規格（210 X 297公釐) " (請先閱讀背面之注意事項再填寫本頁)508637 A7, _____B7___ 5. Description of the Invention (,) Alcohol, ethanol, 1-propanol, isopropanol, n-butanol, sect) Utanol, tertbutanol, or tert-amyl alcohol ), Pentanol, hexanol, or a combination thereof. The type of injection system 12 suitable for use in the present invention is any system capable of injecting one or more processing solutions into a transport stream in line 30 at a controlled flow rate to form a processing stream. In a preferred embodiment, the injection system 12 includes an injection manifold that mixes one or more processing solutions with a delivery stream through one or more injection lines 24. The injection tube 25 is provided for each of the one or more solutions. The treatment solution may be a single chemical solution or a solution containing a mixture of chemicals. Each injection tube 25 is operatively connected to a gas source 27 ′, such as a nitrogen source, so that the gas from the gas source 27 can be supplied to the injection tube 25 to generate a gas column that can be used to exhaust the processing solution in the injection tube 25. . Therefore, the flow rate of the processing solution can be controlled by adjusting the pressure of the gas column in the injection tube 25 (ie, the injection pressure). The injection range valve 28-such as a needle valve of the image system-may optionally be arranged between the injection tube 25 and a delivery flow line 30 to further adjust the usable range of the injection rate of the treatment solution into the delivery flow. Alternatively, a fixed opening can be used to provide a fixed injection rate range. A pressure regulator 31 is preferably used for each injection tube 25 to control the air pressure, and a pressure gauge 32 is optionally arranged in each injection tube 25 to measure the injection pressure. In the preferred case, the injection system 12 has a control valve 29 provided in each injection line 24, which can be opened or closed to allow a specific treatment solution to flow into the delivery stream in the line 30. The control valve 29 can be monitored and controlled by the processor 13. The injection system 12 contains any of the traditional sensors 33 for detecting 16 paper sizes that are compatible with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)- ----- Order------- · I 508637 A7------- «B7___ V. Description of the invention (/ ★) Measure the height of the treatment solution in each injection tube 25. In a specific embodiment, the sensor 33 is a full-length capacitive height sensor. It will be appreciated that the injection pressure range required to achieve a sufficient concentration range in the final process stream will vary depending on the particular system used, but injection pressures that vary between about 5 and 50 PSIG-preferably Between 14 PSIG and 40 PSIG-usually enough. Those who are familiar with this technique should know that there are various injection systems that can combine one or more treatment solutions with the delivery stream to form a treatment stream. A pumping valve can optionally be set to direct the treatment stream to Drain lines' to enable the delivery system to be rinsed with the treatment solution. During operation, the process flow can be directed to the drain line by opening the suction valve and closing the control valve. After a sufficient volume of process stream passes through the suction valve to allow the delivery supply system to be sufficiently cleaned, the control valve will open and the suction valve will close 'to direct the process stream to the processing tank. The processing stream formed according to the present invention can be used for processing semiconductor substrates in the processing tank 11. Examples of processing streams used to process semiconductor substrates include cleaning solutions, etching solutions, or photoresist removal solutions. These solutions contain one or more chemicals and are used to achieve the desired treatment. For example, cleaning solutions often contain particles, metal ions, or organics such as waxes, residual honing agents, or grease. The chemicals used for rinsing are usually caustics, such as acids or bases. For example, acids suitable for rinsing include sulfuric acid, hydrochloric acid, nitric acid, or aqua regia. Suitable bases include ammonium hydroxide. The required etchant concentration in the cleaning solution depends on the particular etchant selected and the degree of cleaning desired. These corrosives can be used for 17 paper sizes in accordance with China National Standard (CNS) A4 (210 X 297 mm) '" (Please read the precautions on the back before filling this page) · nnnn H ϋ nf · 1 I nn I ϋ II n 1 nnnn 1 nnnnnnnnnn ϋ nn I. 508637 A7 -———— --- ~ --5L ______ 5. Description of the invention () Use with oxidants-such as ozone or hydrogen peroxide. "APM" and "HPM" are preferred washing solutions. "APM" includes water, ammonia and hydrogen peroxide; "HPM" includes water, hydrogen peroxide, and hydrochloric acid. APM solution water: h202: NH4OH typical volume percentage is about 5: 1 · · 1 to 200 · · 1: 1. The typical volume percentage of water in the HPM solution: h202: HC1 is about 5: 1: 1 to 1000: 0: 1. Suitable etching solutions contain chemicals that can scavenge oxides. By way of example ' commonly used etchant includes hydrofluoric acid, hydrofluoric acid buffered with hydroxide, ammonium fluoride, or other substances that produce hydrofluoric acid solutions. For example, the volume percentage of water: HF contained in the hydrofluoric acid containing the engraving solution is from about 4: 1 to 1000: 1. Examples of the solution for removing photoresist include a sulfuric acid solution, and an oxidizing substance such as hydrogen peroxide, ozone, or a combination thereof. In addition to a processing stream for processing a semiconductor substrate, the processing stream according to the present invention may be used for cleaning. The "washing fluid" is used to wet the semiconductor substrate in preparation for subsequent wet processing steps, and to remove the previous processing stream, and / or remove other contaminants such as particles from the semiconductor substrate. Factors to be considered when selecting a cleaning fluid include: · the surface characteristics of the semiconductor substrate being washed, the nature of the contaminants present on the semiconductor substrate, and the nature of the processing stream being washed. Suitable cleaning fluids include those described above that are suitable for use as a transport stream, ozone, a surfactant, or a combination thereof. Those skilled in the art will understand that there are various processing streams that can be used in wet processing. Other processing flows have been disclosed in the article "Chemical Etching" by Werner Kem et al., Yu Li Processing, pages 401-496, 18-scale applicable to China National Standard (CNS) A4 (210 X 297 mm) " (please first (Read the notes on the back and fill out this page)

508637 A7 ____________ 五、發明說明（4 ) 濛赝處堙係由John L· Vosser等人編著，並由紐約 Academic Press於1978年出版，在此以引用的方式倂入上 述文獻所揭露之完整內容。所使用的特殊處理流、處理流 之次序、暴露時間，以及處理狀態(亦即溫度、濃度和流率 )等將取決於特定濕式處理的特定目的而定。此外，其它流 體（例如液體、蒸汽、氣體或其組合）可在濕式處理過程中 與半導體基板接觸。 根據本發明所使用的處理器13包含一接收器35。該 接收器35包含任何能夠接收用於決定關連於注射系統12 之注射率所需資料的系統，而注射系統12適於在適當的流 動速率下將適量的處理溶液混入輸送流。例如，接收器35 可接收來自於流量計20的輸送流之流動速率、來自於壓力 計32的注射壓力、來自於注射範圍閥28及/或控制閥29 的注射控制閥位置之資料，以及來自於感應器33並反映出 處理溶液於注射管25內之高度的資料。 在圖1的具體實施例中，處理器13另包含一控制器 37，其用於分別自動地控制注射及/或輸送供應系統12及 10。特別是，控制器37之作用在於自動調節一或多個注射 壓力、輸送流之流動速率，以及/或注射控制閥的位置。控 制器37可爲處理器13的一部份(即接收器35)，或爲單獨 的控制系統而用於接收資料。 舉例而言，適用於本發明的接收器35和控制器37包 括諸如個人電腦、可程式化邏輯控制器(PLCs)或嵌入式處 理器等。較佳的處理器包括如Allen Bradley所製造的 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ·· ^---------ΜΙ0----------T---_--------- 508637 A7 B7 r " 11111 ................ ..................................................... … 一· ................................ 五、發明說明（卩） PLCs。 在操作過程中，處理器13之控制器37傳送訊號以控 制注射管25之注射壓力、輸送流控制閥19之開啓和關閉 ，以及/或注射控制閥28的位置。舉例而言，接收器35可 經由流量計20來監測從輸送供應系統10流出之輸送流的 測量流率。如以下所說明者，在壓力調節器31所給定運用 之壓力以及被界定之範圍閥28設定(控制閥29爲開啓)的 情況下，依照先前關於經由注射管路24所輸送的化學處理 溶液量的校正資料，處理器13可根據測量到的輸送流之流 量，以及輸送到處理槽11之輸送流最終所欲得的化學溶液 高度來計算選擇用於壓力調節器31的設定，以應用適當的 壓力於注射管25。透過壓力調節器31而應用此適當的壓 力，適量的化學溶液即可經由管路24而被送入管路30。 如上所述，在一具體實施例中，處理器13在使用之前 先行被校正。校正程序係爲各處理溶液產生一組資料，其 關於以注射壓力注入處理流之處理溶液的流動速率、輸送 流之流動速率，以及/或注射控制閥的位置。產生的資料隨 後用於決定爲提供具有預定濃度之一或多種處理化學品的 處理流所需要的注射壓力、輸送流之流動速率，以及/或注 射控制閥的位置。 處理器13係用於藉由選擇一組校正參數來校正注射系 統’該等校正參數包括所使用的輸送流；輸送流之流動速 率範圍；所使用的該組注射管25 ;各注射管25的注射閥 的位置範圍；以及各注射管25所使用的壓力範圍。 20 (請先閱讀背面之注意事項再填寫本頁) 訂--- 線丨· 尺度適用t國國家標準(CNS)A4規格（21G X 297公釐) 508637 A7 五、發明說明（β ) 一旦校正參數經過選擇之後，將爲各處理溶液產生一 組資料，其係有關於利用對應注射壓力所得經選擇之處理 溶液的注射率、輸送流之流動速率，以及/或注射控制閥的 位置。爲達此目的，各個被選定的注射管25會被塡充適當 的處理溶液。通常，對於給定的輸送流動速率和注射閥的 位置而言，輸送濃度取決於注射壓力的關聯性最好能夠利 用全4英吋（10公分)注射管之單獨注射來決定。接著，處 理器13被操作用以控制伴隨被選定之注射管25的注射壓 力、輸送流之流動速率，以及/或注射控制閥的位置。應瞭 解的是，處理器13控制注射壓力、輸送流之流率以及注射 控制閥位置的次序，可視系統運用於特定應用而改變。舉 例而言，在一具體實施例中，處理器13藉由改變各個被選 定之注射管25的壓力(不論是逐步或連續地），並使輸送流 動速率和注射控制閥28的位置保持固定不變，以同時校正 各個被選定的注射管25。然而，由於最小的穩定注射壓力 可能會隨著輸送流動速率的函數而改變，並且由於注射率 會隨著施用壓力的函數而改變，因而此程序最好以三種或 更多種不同的輸送流動速率來重複進行。可視情況利用適 性演算法將需要的輸送流動速率數目減至最低。舉例而言 ，各個被選定的注射管25係在低流動速率(例如5 gpm)及 高流動速率（例如20 gpm)下予以校正。中點（例如12.5 gpm)的估計注射率係藉由將所測量的高流動速率和低流動 速率內插而加以計算出。在中點上的實際注射率被測量， 並與估計的流動速率相互比較。若實際注射率與估計注射 21 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)508637 A7 ____________ V. Description of the Invention (4) The Mongolian Department is edited by John L. Vosser et al. And published by the New York Academic Press in 1978. The entire contents disclosed in the above documents are incorporated herein by reference. The particular treatment stream used, the order of the treatment streams, the exposure time, and the treatment status (ie, temperature, concentration, and flow rate) will depend on the specific purpose of the particular wet process. In addition, other fluids (such as liquids, vapors, gases, or combinations thereof) can come into contact with the semiconductor substrate during wet processing. The processor 13 used in accordance with the present invention includes a receiver 35. The receiver 35 contains any system capable of receiving the information required to determine the injection rate associated with the injection system 12, and the injection system 12 is adapted to mix an appropriate amount of processing solution into the delivery stream at an appropriate flow rate. For example, the receiver 35 may receive data on the flow rate of the delivery stream from the flow meter 20, the injection pressure from the pressure gauge 32, the position of the injection control valve from the injection range valve 28 and / or the control valve 29, and from The sensor 33 reflects the data of the height of the processing solution in the injection tube 25. In the specific embodiment of FIG. 1, the processor 13 further includes a controller 37 for automatically controlling the injection and / or delivery system 12 and 10, respectively. In particular, the controller 37 functions to automatically adjust one or more injection pressures, the flow rate of the delivery stream, and / or the position of the injection control valve. The controller 37 may be part of the processor 13 (i.e., the receiver 35) or may be used to receive data for a separate control system. For example, the receiver 35 and the controller 37 suitable for the present invention include, for example, personal computers, programmable logic controllers (PLCs), or embedded processors. Better processors include 19 paper sizes, such as those made by Allen Bradley, which are compatible with the Chinese National Standard (CNS) A4 (210 X 297 mm) (please read the notes on the back before filling out this page) ·· ^- ------- ΜΙ0 ---------- T ---_--------- 508637 A7 B7 r " 11111 ........... ................................. ............. ...................................... 5. V. Description of the Invention (卩) PLCs. During operation, the controller 37 of the processor 13 sends signals to control the injection pressure of the injection tube 25, the opening and closing of the delivery flow control valve 19, and / or the position of the injection control valve 28. For example, the receiver 35 may monitor the measured flow rate of the transport stream flowing from the transport supply system 10 via the flow meter 20. As explained below, in the case where the pressure applied by the pressure regulator 31 and the defined range valve 28 is set (the control valve 29 is open), the chemical treatment solution delivered through the injection line 24 according to the previous The amount of calibration data, the processor 13 can calculate the settings selected for the pressure regulator 31 according to the measured flow rate of the conveying stream and the height of the chemical solution finally required for the conveying stream to the processing tank 11 to apply the appropriate The pressure in the injection tube 25. By applying this appropriate pressure through the pressure regulator 31, an appropriate amount of chemical solution can be sent to the pipeline 30 through the pipeline 24. As described above, in a specific embodiment, the processor 13 is corrected before use. The calibration procedure generates a set of data for each treatment solution regarding the flow rate of the treatment solution injected into the treatment stream at the injection pressure, the flow rate of the delivery stream, and / or the position of the injection control valve. The data generated is then used to determine the injection pressure, flow rate of the delivery stream, and / or the position of the injection control valve required to provide a treatment stream with a predetermined concentration of one or more processing chemicals. The processor 13 is used for calibrating the injection system by selecting a set of correction parameters. The correction parameters include the transport flow used; the flow rate range of the transport flow; the set of injection tubes 25 used; The position range of the injection valve; and the pressure range used by each injection tube 25. 20 (Please read the precautions on the back before filling in this page) Order --- LINE 丨 · Standards applicable to national standards (CNS) A4 specifications (21G X 297 mm) 508637 A7 V. Description of the invention (β) Once corrected After the parameters are selected, a set of data is generated for each treatment solution, which is related to the injection rate of the selected treatment solution, the flow rate of the delivery stream, and / or the position of the injection control valve using the corresponding injection pressure. To this end, each selected syringe 25 is filled with a suitable processing solution. In general, for a given delivery flow rate and injection valve position, the delivery concentration depends on the injection pressure. The correlation is best determined by a single injection of a full 4 inch (10 cm) injection tube. The processor 13 is then operated to control the injection pressure accompanying the selected injection tube 25, the flow rate of the delivery stream, and / or the position of the injection control valve. It should be understood that the order in which the processor 13 controls the injection pressure, the flow rate of the delivery flow, and the position of the injection control valve may vary depending on the application of the system to a particular application. For example, in a specific embodiment, the processor 13 changes the pressure (either stepwise or continuously) of each selected injection tube 25 and keeps the delivery flow rate and the position of the injection control valve 28 fixed. To modify each selected syringe 25 at the same time. However, since the minimum stable injection pressure may change as a function of delivery flow rate, and because the injection rate changes as a function of application pressure, this procedure is best performed at three or more different delivery flow rates To repeat. If appropriate, use adaptive algorithms to minimize the number of required delivery flow rates. For example, each selected syringe 25 is calibrated at a low flow rate (for example, 5 gpm) and a high flow rate (for example, 20 gpm). The estimated injection rate at the midpoint (eg 12.5 gpm) is calculated by interpolating the measured high and low flow rates. The actual injection rate at the midpoint was measured and compared with the estimated flow rate. If the actual injection rate and estimated injection 21 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page)

_ ...... Ο-»» «Μ OK... ΜΤ MW I MW .MM VMM Μ· 瞧 Μ. * i Ο..... -.Μ·. —w I I MM 508637 A7 ____B7____ 五、發明說明（β ) 率之間的差値小於預定値，則不需要校正其它的流動速率 。然而，若實際注射率與估計注射率之間的差値大到無法 接受的程度，則會針對中間的流動速率來測量實際注射率 ，並以上述的相同方式加以分析。在另一情況下利用特定 的輸送流動速率和注射控制閥位置，同時注射壓力依序隨 著各個被選定的注射管25而改變。在另一具體實施例中， 注射壓力與輸送流動速率會改變，而注射控制閥的位置則 保持不變。如上所述，運用此具體實施例，被選定的注射 管25可同時或依序被校正。在另一具體實施例中，注射壓 力、輸送流之流動速率以及注射控制閥的位置均會改變。 注射壓力及輸送流動速率的控制容許本發明之系統及 方法使用範圍廣泛的處理流之處理化學品濃度。當可瞭解 的是，注射壓力、輸送流動速率及注射控制閥位置的控制 容許使用可能的處理化學品濃度的整個動態範圍。在典型 情況下，例如在CFM Full-FolW™類型的系統中，利用固定 的注射控制閥位置和固定的輸送流動速率即可得到約2.5 至1的動態濃度範圍。若輸送流動速率亦同時改變，則動 態濃度範圍可以增加到約25至1。然而，某些應用可能會 在注射壓力、輸送流動速率及注射控制閥位置之一或多者 的改變能力上設下內在的限制條件。例如，當利用氟化氫 來蝕刻半導體基板時，由於輸送流動速率和處理槽內所形 成之流體動力對於蝕刻均勻度的關鍵性影響，只有注射壓 力和注射控制閥的位置會改變。 在整個注射過程中，處理溶液在被選定之注射管25內 22 尺度適用中國國家標準（CNS)A4規格（21G X 297公爱) (請先閱讀背面之注意事項再填寫本頁) n n n^*-eJΜ MMW MOM I aMI 雪 線_·-------------T——：· 508637 A7 ^____B7_________ 五、發明說明（W) 的高度、對應的注射壓力、輸送流動速率，以及/或對應的 注射控制閥位置，會被處理器13之接收器35測量並記錄 爲時間的函數。若由輸送流所引發的背向壓力係單獨地描 述其特性，則可減少確實校正注射管所需要的注射次數。 接著，處理器13利用記錄的資料來產生該組關於各個 被選定且伴隨對應壓力之處理溶液的流動速率、輸送流率 及/或對應的注射控制閥位置等資料。在一具體實施例中， 在特定時間”t”所注入之處理溶液體積的不連續値(V(t))係 利用方程式：V(t)= r2(Z\L)並從記錄的高度和時間測量値 來決定，其中r爲注射管的半徑，AL爲處理溶液在注射 管內的筒度變化量。V(t)的不連續値隨後經過回歸處理而 得到以時間爲函數的體積方程式。例如，V⑴的値可擬合 爲具有下列形式的立方方程式：V(t)=At3+Bt2+Ct+D，其中 A、B、C及D爲常數。接著，體積方程式加以微分而得到 以時間爲函數的注射率(R(t))。當體積方程式爲立方形式時 ，注射率由下式給定：R(t)=3At2+2Bt+C。速率方程式連同 以時間爲函數的注射壓力之測量値即可用於決定各選定處 理溶液在各注射壓力下的注射率。在一具體實施例中，資 料加以回歸而提供校正方程式，其中輸送流動速率、注射 壓力和注射控制閥的位置爲自變數，而化學品濃度則爲應 變數。相關係數可視情況決定，若相關係數低於某預定値( 例如低於約0.9)，則該相關係數即被排除。此外，由於校 正方程式並非正好爲速率方程式的倒數，因此校正方程式 所適用的注射率範圍需視情況而定。校正方程式所適用的 23 本紙張^度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ ~ (請先閱讀背面之注意事項再填寫本頁)_ ...... Ο- »» «Μ OK ... ΜΤ MW I MW .MM VMM Μ · Look at M. * i Ο ..... -.Μ ·. —W II MM 508637 A7 ____B7____ 5 2. The difference between the (β) rate 値 is smaller than the predetermined 値, so it is not necessary to correct other flow rates. However, if the difference between the actual injection rate and the estimated injection rate is unacceptably large, the actual injection rate is measured for the intermediate flow rate and analyzed in the same manner as described above. In another case, a specific delivery flow rate and injection control valve position are used, while the injection pressure is sequentially changed with each selected injection tube 25. In another embodiment, the injection pressure and delivery flow rate are changed, while the position of the injection control valve remains the same. As described above, with this specific embodiment, the selected syringes 25 can be corrected simultaneously or sequentially. In another embodiment, the injection pressure, the flow rate of the delivery stream, and the position of the injection control valve are all changed. Control of injection pressure and delivery flow rate allows the system and method of the present invention to use a wide range of process stream processing chemical concentrations. It will be appreciated that control of injection pressure, delivery flow rate, and injection control valve position allows the entire dynamic range of possible process chemical concentrations to be used. In a typical case, for example in a CFM Full-FolW ™ type system, a dynamic concentration range of about 2.5 to 1 can be obtained with a fixed injection control valve position and a fixed delivery flow rate. If the delivery flow rate also changes at the same time, the dynamic concentration range can be increased to about 25 to 1. However, some applications may place inherent limitations on the ability to change one or more of the injection pressure, delivery flow rate, and injection control valve position. For example, when hydrogen fluoride is used to etch a semiconductor substrate, only the injection pressure and the position of the injection control valve will change due to the critical influence of the transport flow rate and the hydrodynamic forces formed in the processing tank on the uniformity of the etching. During the entire injection process, the treatment solution is selected within the selected injection tube 25 at 22 dimensions and applies the Chinese National Standard (CNS) A4 specification (21G X 297 public love) (Please read the precautions on the back before filling this page) nnn ^ * -eJΜ MMW MOM I aMI snow line _ · ------------- T ——: · 508637 A7 ^ ____ B7_________ 5. Description of the invention (W) height, corresponding injection pressure, delivery flow rate And / or the corresponding injection control valve position will be measured by the receiver 35 of the processor 13 and recorded as a function of time. If the characteristics of the back pressure caused by the delivery flow are individually described, the number of injections required to accurately correct the injection tube can be reduced. Then, the processor 13 uses the recorded data to generate the set of data about the flow rate, the delivery flow rate, and / or the position of the corresponding injection control valve of each selected treatment solution accompanied by the corresponding pressure. In a specific embodiment, the discontinuous volume (V (t)) of the volume of the treatment solution injected at a specific time "t" is calculated using the equation: V (t) = r2 (Z \ L) The time is measured by 决定, where r is the radius of the injection tube, and AL is the change in the cylinder of the treatment solution in the injection tube. The discontinuity of V (t) is then subjected to regression processing to obtain the volume equation as a function of time. For example, ⑴ of V⑴ can be fitted to a cubic equation of the form: V (t) = At3 + Bt2 + Ct + D, where A, B, C, and D are constants. Next, the volume equation is differentiated to obtain the injection rate (R (t)) as a function of time. When the volume equation is cubic, the injection rate is given by: R (t) = 3At2 + 2Bt + C. The rate equation, together with the measurement of injection pressure as a function of time, can then be used to determine the injection rate of each selected treatment solution at each injection pressure. In a specific embodiment, the data is regressed to provide a correction equation in which the delivery flow rate, injection pressure, and position of the injection control valve are independent variables, and the chemical concentration is a dependent variable. The correlation coefficient may be determined according to the situation. If the correlation coefficient is lower than a predetermined threshold (for example, lower than about 0.9), the correlation coefficient is excluded. In addition, because the correction equation is not exactly the inverse of the rate equation, the range of injection rates to which the correction equation is applicable depends on the situation. 23 papers to which the correction equation applies are applicable to China National Standard (CNS) A4 (210 X 297 mm) _ ~ (Please read the precautions on the back before filling this page)

508637 A7 ___B7_ 五、發明說明（ >丨） 注射率範圍係利用啓始與終止注射壓力來獲得最小和最大 注射率的近似値，然後再利用最小和最大注射率來決定最 小和最大壓力。在另一種情況下，其爲各個被選定處理溶 液產生多維度的資訊列表，其中輸送流率、注射壓力和注 射控制閥的位置爲自變數，而化學品濃度則爲應變數。測 得的注射壓力可在用於修正注射管25內之處理流柱的重量 之前視情況予以調節(亦即，注射壓力隨著處理流柱之重量 而增加，以便當注射管25流空時能夠提供可運用的有效壓 力）。調節測得的注射壓力可使處理器13能夠在任何體柱 高度開始進行注射。 校正方程式本身或多維度的資訊列表係使被選定之處 理溶液於注射壓力下的流動速率、輸送流動速率及/或注射 控制閥的位置產生關聯，隨後並用於決定在給定輸送流動 速率及/或注射控制閥之位置下獲得所欲注射率所需的注射 壓力。例如，所需的注射壓力可藉由在該組資料內的離散 資料點之間使用內插來決定。在替代情況下，該組資料可 利用如多變數方程式加以回歸，而所需的注射壓力即可由 回歸方程式來決定。隨後，處理器13的控制器37利用所 需的注射壓力、輸送流之流動速率及/或注射控制閥的位置 來操作注射壓力、輸送流之流動速率及/或注射控制閥的位 置，藉以形成吾人所欲的處理流。 一旦處理流從適當的處理溶液和輸送流形成之後，其 被導入處理槽11內而與半導體基板接觸並持續一段預定的 時間。處理流可藉由任何傳統方式而被導入處理槽11。在 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)508637 A7 ___B7_ V. Description of the invention (> 丨) The injection rate range uses the starting and ending injection pressures to obtain an approximation of the minimum and maximum injection rates, and then uses the minimum and maximum injection rates to determine the minimum and maximum pressures. In another case, it generates a multi-dimensional information list for each selected processing solution, where the delivery flow rate, injection pressure, and position of the injection control valve are independent variables, and the chemical concentration is the strain number. The measured injection pressure may be adjusted as appropriate before being used to correct the weight of the processing flow column in the injection tube 25 (that is, the injection pressure increases with the weight of the processing flow column so that when the injection tube 25 is empty Provide usable effective pressure). Adjusting the measured injection pressure enables the processor 13 to start injection at any body column height. The calibration equation itself or the multi-dimensional information list correlates the flow rate of the selected processing solution under the injection pressure, the delivery flow rate, and / or the position of the injection control valve, and is then used to determine the flow rate at a given delivery and / Or the injection pressure required to obtain the desired injection rate under the position of the injection control valve. For example, the required injection pressure can be determined by using interpolation between discrete data points within the set of data. In the alternative, the set of data can be regressed using, for example, a multivariate equation, and the required injection pressure can be determined by the regression equation. Subsequently, the controller 37 of the processor 13 utilizes the required injection pressure, the flow rate of the delivery stream, and / or the position of the injection control valve to operate the injection pressure, the flow rate of the delivery stream, and / or the position of the injection control valve to form I want to handle the flow. Once the processing stream is formed from the appropriate processing solution and transport stream, it is introduced into the processing tank 11 to contact the semiconductor substrate for a predetermined period of time. The processing stream may be introduced into the processing tank 11 by any conventional means. Applicable to China Paper Standard (CNS) A4 (210 X 297 mm) on 24 paper sizes (Please read the notes on the back before filling this page)

508637 A7 ____B7___ 五、發明說明（β ) 較佳情況下，處理流被導入處理槽11時，其使半導體基板 首先暴露於處理流的部分係爲半導體基板先從處理流中移 出的部分。例如，經由一閥門42操作性連接位於處理槽 11之底部的第一璋44而將處理流導入處理槽11，並經由 位於處理槽11之頂部的第二埠46而將處理流排出處理槽 即可完成此種“先進先出”法。以較佳情況而言，處理流 係經由連接第二埠與排水管路49的閥門48而從處理槽11 排出。然而，應瞭解的是，可利用各種不同方式來引導處 理流。例如，可經由第二璋46將處理流導入處理槽11， 並經由第一埠而從處理槽11排出。當利用乾燥流體來乾燥 化半導體基板時，由第二埠洪應到第一埠將特別適用。在 替代情況下，處理流可在相同的埠口導入及排出處理槽11 〇 可利用任何一種傳統方式將處理流從處理槽11淸除。 例如，淸洗流體、乾燥流體或第二處理流可經由第一或第 二埠而被引導通過處理槽，以取代目前存在於槽11內的處 理流。當使用第二處理溶液時，該第二處理溶液最好依照 上述方式形成。 適用的處理程序實例包含：使半導體基板接觸APM( 過氧化銨混合物）溶液(例如水：過氧化氫：氫氧化銨的容 積百分率爲80 : 3 : 1的溶液)或HPM(氯化氫之過氧化物混 合物)溶液(例如水··過氧化氫··鹽酸的容積百分率爲80 : 1 :1的溶液）；利用去離子水淸洗；使半導體基板接觸蝕刻 溶液（例如氫氟酸溶液）；以及利用去離子水淸洗。在乾燥 25 本紙張尺度適用中國國ϋί (CNS)A4規格（210 x 297公釐）---- (請先閱讀背面之注意事項再填寫本頁)508637 A7 ____B7___ 5. Description of the Invention (β) Preferably, when the processing stream is introduced into the processing tank 11, the part of the semiconductor substrate that is first exposed to the processing stream is the part that the semiconductor substrate is first removed from the processing stream. For example, the processing stream is introduced into the processing tank 11 through a valve 42 operatively connected to the first coil 44 located at the bottom of the processing tank 11, and the processing flow is discharged out of the processing tank through a second port 46 on the top of the processing tank 11. This "first in, first out" method can be completed. Preferably, the treatment stream is discharged from the treatment tank 11 through a valve 48 connecting the second port and the drainage line 49. However, it should be understood that there are various different ways to guide the processing flow. For example, the processing stream may be introduced into the processing tank 11 via the second pump 46 and discharged from the processing tank 11 via the first port. When a drying fluid is used to dry the semiconductor substrate, the application of the second port to the first port is particularly suitable. In the alternative, the processing stream may be introduced into and discharged from the processing tank 11 at the same port. The processing stream may be purged from the processing tank 11 in any conventional manner. For example, the washing fluid, the drying fluid, or the second processing stream may be directed through the processing tank through the first or second port to replace the processing stream currently present in the tank 11. When a second treatment solution is used, the second treatment solution is preferably formed in the above-mentioned manner. Examples of suitable processing procedures include: contacting a semiconductor substrate with an APM (ammonium peroxide mixture) solution (e.g. water: hydrogen peroxide: ammonium hydroxide solution with a volume percentage of 80: 3: 1) or HPM (hydrogen chloride peroxide) Mixture) solution (for example, water · hydrogen peroxide · hydrochloric acid with a volume percentage of 80: 1: 1); washing with deionized water; contacting the semiconductor substrate with an etching solution (such as a hydrofluoric acid solution); and using Rinse in deionized water. Applicable to China National Standard (CNS) A4 (210 x 297 mm) in 25 paper sizes. (Please read the precautions on the back before filling this page)

-------訂-----—·線丨— I 508637 A7 ____B7____ 五、發明說明（Η ) 之前的最後一個濕式處理步驟最好爲淸洗步驟。因此，根 據本發明存在多種方式來進行半導體基板之濕式處理。凡 熟習此項技藝之人士當可瞭解，本發明之方法可應用於其 它類型化學品濃度需要加以監測的濕式處理步驟。 利用至少一種濕式處理溶液進行濕式處理之後，半導 體基板最好加以乾燥化。“乾燥”或“乾燥化”係指半導 體最好被處理成幾乎沒有液滴。經由乾燥化過程來淸除液 滴，當液滴被蒸發時，存在於液滴中的雜質將不會留在半 導體基板的表面。此類雜質會在半導體基板的表面上不當 地留下印記（例如水印）或其它殘留物。然而，可設想而知 ，乾燥化可能僅涉及藉著乾燥化流體的協助來淸除處理流 或淸洗流體。 < 任何乾燥化方法及系統均可使用。舉例而言，適用的 乾燥化方法包括：蒸發、在旋轉-淸洗-乾燥器中利用離心 力、氣化、化學乾燥法或其組合。 , 在較佳的乾燥法中係利用乾燥化流體直接取代進行乾 燥化之前最後與半導體基板接觸的流體(以下稱作“直接取 代乾燥化”）。舉例而言，適於進行直接乾燥化的方法和系 統已揭示於美國專利第4,778,532號、第4,795,497號、第 4,911，761號、第4,984,579號以及第5,569,330號，在此以 引用的方式倂入上述專利所揭露之完整內容。其它可使用 的直接取代乾燥器包括諸如由Steag、Dainippon和 YieldUp等製造商所提供的Marangoni型乾燥器。利用美 國專利第4,911，761號所揭示之系統及方法來乾燥化半導 26 本紙張ϋ適用中國國家標準(CNS)A4規格（210 X 297公爱) ~ - (請先閲讀背面之注意事項再填寫本頁) « ϋ 1 ϋ n ϋ n ϋ I I n n n I n n n n n n ϋ n n n ϋ -I 1 n n n n 508637 A7 B7 五、發明說明（W) 體基板爲最佳，在此以引用的方式倂入上述專利所揭露之 完整內容。 以較佳情況而言，乾燥化流體係從部分或完全蒸發的 乾燥化溶液所形成。例如，乾燥化流體可爲過熱的、蒸汽 與液體之混合物或飽和蒸汽。可加以運用的乾燥化溶液的 實例包括醇類如甲醇、乙醇、1-丙醇、異丙醇、η-丁醇、 secbutanol、特丁醇（tertbutanol)，或特戊醇（tert-amyl alcohol)、丙酮、氰化甲院（acetonitrile)、六氟丙酮 (hexafluoroacetone)、硝基甲院、乙酸、丙酸、乙二醇單甲 醚(ethylene glycol mono-methyl ether)、二氟乙院 (difluoroethane)、乙酸乙酯（ethyl acetate)、乙酸異丙酯 (isopropyl acetate)、1，1，2-三氯-1，2,2-三氟乙院（1，1，2-trichloro-1,2,2-trifluoroethane) 、 1,2- H Μ Ζι ^ (1,2- dichloroethane)、三氯乙院（trichloroethane)、perfluoro-2-butyltetrahydrofuran、perfluoro-1,4-dimethylcyclohexane， 或前述之組合。較佳的有機溶劑爲Q至C6醇類，例如甲 醇、乙醇、1_丙醇、異丙醇、η-丁醇、secbutanol、特丁醇 (tertbutanol)、特戊醇（tert-amyl alcohol)、戊醇（pentanol)、 己醇(hexanol)，或前述之組合。 範例 根據本發明之系統係被校正用以形成一處理流，該處 理流含有做爲輸送流的去離子(DI)水，以及做爲唯一的處 理化學品的過氧化氫（H202)。特別是，可從CFM Technologies公司購得的Full Flow Omni 8100型系統係根 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -------•訂·--------丨 508637 A7 B7 五、發明說明（>〇 據本發明予以校正。去離子水輸送流之流率係保持在13 GPM，而注射控制閥的位置則維持固定不變。注射壓力由 最小値14 PSIG持續變化到最大値30 PSIG。 表1列出注射管內之過氧化氫的代表性高度測量値， 其係以任意單位之代表性時間（測量値時間）的百分率(高度 百分率)來表示。表1中同時列出任意單位的測量値時間與 以分鐘爲單位之時間（時間）的轉換。以加侖爲單位的過氧 化氫之注射體積係由高度百分率來決定並顯示於表1° 表1 測量値時間 高度百分率 時間（分鐘） 體想姐適2_ 10764 92.2 0.1794 0.57164 ....... 14936 89.7 0.248933333 0.55614 18218 87.8 0.303633333 0.54436 21233 86.1 0.353883333 0.53382 ___---- 24718 84 0.411966667 0.5208 28186 81.6 0.469766667 0.50592 31546 79.5 0.525766667 __ 0.4929 35061 77.3 0.58435 0.47926 38905 74.7 0.648416667 —^^46314 42186 72.5 0.7031 0.4495 __—--- 45389 70.5 0.756483333 0.4371 48952 67.8 0.815866667 0.42036 52593 65.4 0.87655 0.40548 _______ 56218 62.8 0.936966667 0.38936 59686 60.5 0.994766667 —0.3751 62952 57.7 1.0492 0.35774 66421 55.1 1.107016667 0.34162 69983 52.5 1.166383333 一 0.3255 73671 49.8 1.22785 0.30876 77077 46.9 1.284616667 0.29078 80280 44.5 1.338 0.2759 _-------— 83968 41.4 1.399466667 0.25668 87233 38.9 1.453883333 0.24118 91124 35.6 1.518733333 0.22072 95124 32.1 1.5854 ."^^0Tl9902 ——-—- 28 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公楚〉 (請先閱讀背面之注意事項再填寫本頁)------- Order ------- · Line 丨 — I 508637 A7 ____B7____ 5. The last wet processing step before the description of the invention (Η) is preferably the washing step. Therefore, there are various ways to perform wet processing of a semiconductor substrate according to the present invention. Those skilled in the art will appreciate that the method of the present invention can be applied to wet processing steps where the concentration of other types of chemicals needs to be monitored. After the wet processing is performed using at least one wet processing solution, the semiconductor substrate is preferably dried. "Drying" or "drying" means that the semiconductor is preferably processed to have almost no droplets. The liquid droplets are removed through the drying process. When the liquid droplets are evaporated, impurities existing in the liquid droplets will not remain on the surface of the semiconductor substrate. Such impurities can improperly leave marks (such as watermarks) or other residues on the surface of the semiconductor substrate. However, it is envisaged that desiccation may only involve the removal of a treatment stream or a washing fluid with the assistance of a desiccant fluid. < Any drying method and system can be used. For example, suitable drying methods include evaporation, use of centrifugal force in a spin-wash-dryer, gasification, chemical drying, or a combination thereof. In a preferred drying method, a drying fluid is used to directly replace the fluid that was finally in contact with the semiconductor substrate before drying (hereinafter referred to as "direct replacement drying"). For example, methods and systems suitable for direct drying have been disclosed in U.S. Patent Nos. 4,778,532, 4,795,497, 4,911,761, 4,984,579, and 5,569,330, which are incorporated herein by reference. The full disclosure of the patent. Other direct replacement dryers that can be used include Marangoni-type dryers such as those provided by manufacturers such as Steag, Dainippon and YieldUp. Utilizing the system and method disclosed in U.S. Patent No. 4,911,761 to dry semiconducting 26 sheets of paper ϋ applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) ~-(Please read the precautions on the back before (Fill in this page) «ϋ 1 ϋ n ϋ n ϋ II nnn I nnnnnn ϋ nnn ϋ -I 1 nnnn 508637 A7 B7 5. Description of the invention (W) The body substrate is the best, which is incorporated herein by reference. Full disclosure. Preferably, the drying stream system is formed from a partially or completely evaporated drying solution. For example, the desiccant fluid may be superheated, a mixture of steam and liquid, or saturated steam. Examples of usable drying solutions include alcohols such as methanol, ethanol, 1-propanol, isopropanol, eta-butanol, secbutanol, tertbutanol, or tert-amyl alcohol , Acetone, acetonitrile, hexafluoroacetone, nitrofluoroacetone, acetic acid, propionic acid, ethylene glycol mono-methyl ether, difluoroethane , Ethyl acetate, isopropyl acetate, 1,1,2-trichloro-1,2,2-trifluoroethane (1,1,2-trichloro-1,2, 2-trifluoroethane), 1,2-H Μ ^ (1,2-dichloroethane), trichloroethane, perfluoro-2-butyltetrahydrofuran, perfluoro-1,4-dimethylcyclohexane, or a combination thereof. Preferred organic solvents are Q to C6 alcohols, such as methanol, ethanol, 1-propanol, isopropanol, eta-butanol, secbutanol, tertbutanol, tert-amyl alcohol, Pentanol, hexanol, or a combination thereof. Example The system according to the present invention is calibrated to form a treatment stream containing deionized (DI) water as a transport stream and hydrogen peroxide (H202) as the sole treatment chemical. In particular, the Full Flow Omni 8100 system, which is available from CFM Technologies, has a paper size of 27. This paper applies to China National Standard (CNS) A4 (210 X 297 mm). (Please read the precautions on the back before filling in this (Page) ------- • Order · ---- 丨 丨 637637 A7 B7 V. Description of the invention (> 〇 Corrected according to the invention. The flow rate of the deionized water transport stream is maintained at 13 GPM, while the position of the injection control valve remains fixed. The injection pressure continues to change from a minimum of PS14 PSIG to a maximum of 値 30 PSIG. Table 1 lists a representative height measurement of hydrogen peroxide in the injection tube, which is based on The percentage (height percentage) of the representative time (measurement time) in any unit is expressed. Table 1 also lists the conversion between the measurement time in any unit and the time (time) in minutes. The unit of gallon is The injection volume of hydrogen peroxide is determined by the percentage of height and is shown in Table 1 ° Table 1 Measurement time of the percentage time of height (minutes) I think I am 2_ 10764 92.2 0.1794 0.57164 ....... 14936 89.7 0.248933333 0.55614 18218 87.8 21233 0.53382 0.54436 86.1 0.303633333 0.353883333 0.411966667 .5208 ___---- 2471884 28186 31546 79.5 81.6 0.469766667 0.525766667 __ 0.50592 0.4929 0.58435 0.47926 38905 35061 77.3 74.7 0.648416667 - ^^ 4631442186 72.5 0.7031 0.4495 0.4371 0.756483333 __---- 45389 70.5 48952 67.8 0.815866667 0.42036 52593 65.4 0.87655 0.40548 _______ 56218 62.8 0.936966667 0.38936 59686 60.5 0.994766667 —0.3751 62952 57.7 1.0492 0.35774 66421 55.1 1.107016667 0.34162 69983 52.5 1.166383333-0.3255 73671 49.8 1.22785 0.30876 77077 46.9 1.284616_65--0.39078 83968 41.4 1.399466667 0.25668 87233 38.9 1.453883333 0.24118 91124 35.6 1.518733333 0.22072 95124 32.1 1.5854. &Quot; ^^ 0Tl9902 ——--- 28 This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297) (Read the notes on the back and fill out this page)

508637 A7 B7 五、發明說明（w) 98952 28.9 1.6492 0.17918 102421 26.2 1.707016667 0.16244 105905 23.1 1.765083333 0.14322 109327 20.2 1.822116667 0.12524 112624 17.5 1.877066667 0.1085 116218 14.5 1.936966667 0.0899 圖2顯示做爲時間之函數的體積方程式的標繪圖，其 係利用表1所列之做爲時間之函數的過氧化氫的注射體積 而取得。高度測量値係擬合爲如下列形式的二次方程式： V(t) = -0.0333t2 - 0.2055t + 0.60104，其回歸係數(R2)爲 1 。取其導數即可得到下列形式的速率方程式：R(t) = 2(-0.0333t) - 0.2055 ° 圖3繪出做爲時間之函數的注射壓力測量値。結合圖 2及圖3的資料可獲得做爲注射壓力之函數的過氧化氫注 射率。使注射率與注射壓力產生關聯的資料被擬合爲下列 形式的二次方程式：R(t) = -0.0001P2 + 0.0119P + 0.071， 其中P爲注射壓力，而回歸係數(R2)爲0.9997，其結果繪 示於圖4。 改變去離子水輸送流動速率的效果係重複執行上述程 序並利用5、9、17和21 GPM等流率而決定，其結果繪示 於圖5。 凡熟習此項技藝之人士當可瞭解，本發明之較佳實施 例可進行多種變更及修飾，但此類變更及修飾仍不脫離本 發明之精神。因此，所附申請專利範圍意指涵蓋屬於本發 明之實際範圍及精神的所有等效變更。 29 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 9 ill ϋ n I n n * l III n t I n 1 n ϋ I n I I I I I I I n508637 A7 B7 V. Description of the invention (w) 98952 28.9 1.6492 0.17918 102421 26.2 1.707016667 0.16244 105905 23.1 1.765083333 0.14322 109327 20.2 1.822116667 0.12524 112624 17.5 1.877066667 0.1085 116218 14.5 1.936966667 0.0899 Figure 2 shows the plot of the volume equation as a function of time, which is shown in Figure 2. Obtained using the injection volume of hydrogen peroxide listed as a function of time in Table 1. The height measurement system is fitted as a quadratic equation in the form: V (t) = -0.0333t2-0.2055t + 0.60104, and its regression coefficient (R2) is 1. Take the derivative to get the following rate equation: R (t) = 2 (-0.0333t)-0.2055 ° Figure 3 shows the injection pressure measurement as a function of time. The hydrogen peroxide injection rate as a function of injection pressure can be obtained by combining the data in Figs. The data that correlates the injection rate with the injection pressure is fitted to a quadratic equation of the form: R (t) = -0.0001P2 + 0.0119P + 0.071, where P is the injection pressure and the regression coefficient (R2) is 0.9997, The results are shown in FIG. 4. The effect of changing the flow rate of the deionized water transport was determined by repeating the above procedure and using flow rates of 5, 9, 17, and 21 GPM. The results are shown in Figure 5. Those skilled in the art can understand that the preferred embodiment of the present invention can make various changes and modifications, but such changes and modifications do not depart from the spirit of the present invention. Accordingly, the scope of the appended patents is intended to cover all equivalent changes that fall within the true scope and spirit of the invention. 29 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) 9 ill ϋ n I nn * l III nt I n 1 n ϋ I n IIIIIII n

Claims (1)

508637 A8B8C8D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 1.一種用於處理電子元件之系統，其包含： 一槽，其用於容納該等電子元件； 一輸送供應系統，其以流體連通於該槽，用以將一輸 送流供應到該槽； 一注射系統，其以流體連通於該輸送供應系統，用以 將一處理溶液從該槽之上游位置導入該輸送供應系統；及 一處理器，其係操作性連結於該注射系統，並用以： i·產生伴隨該注射系統之處理溶液體積和注射壓力等 資料，以及伴隨以時間爲函數之輸送供應系統的輸送流動 速率； ii·決定一處理溶液注射率，其係以注射壓力及輸送流 動速率爲函數； iii·決定在一預定處理溶液注射率之下的注射壓力及 輸送流動速率的數値；及 iv·在該預定處理溶液注射率之下，藉由將該注射壓 力和該輸送流動速率調節到該等預定數値，而從該注射系 統將該處理溶液注入該輸送供應系統。 2·如申請專利範圍第1項之系統，其中該注射系統包 含一注射管。 3·如申請專利範圍第2項之系統，其中該注射系統包 含複數注射管，其用於將複數處理溶液導入該輸送供應系 統。 4·如申請專利範圍第3項之系統，其中該處理器係操 作性連結於該等注射管之一或多者，以個別地調節伴隨該 1 本紙張尺度適用中國國家標準（CNS)A4規袼（210 X 297公爱） τ -------^— —--- (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 508637 C8 -一 一 D8 六、申請專利範圍 等注射管之一或多者之注射率。 5·如申請專利範圍第i項之系統，其中該注射系統包 含一容器、一排水口及一閥門，該容器係用於容納一處理 ί容'液’該排水口係操作性連接於該容器與該輸送供應系統 $間’ 於建立該容器與該輸送供應系統之間的流體連通 ’該閥門則定位於該排水口與該輸送供應系統之間。 6·如申請專利範圍第5項之系統，其中該處理器係操 作性連接於該閥門，並用於調節該閥門。 7·如申請專利範圍第1項之系統，其中該處理器根據 一或多預定的校正參數來調節伴隨該注射系統之注射率。 δ·如申請專利範圍第7項之系統，其中該注射系統包 含一注射管。 9.一種用於製備化學溶液之方法，該化學溶液含有一 輸送流體及至少一處理溶液，其用於處理電子元件，該方 法包含下列步驟： 產生伴隨一注射系統之處理溶液體積和注射壓力等資 料，以及伴隨以時間爲函數之輸送供應系統的輸送流動速 率； 決定一處理溶液注射率，其係以注射壓力及輸送流動 速率爲函數， 決定在一預定處理溶液注射率之下的注射壓力及輸送 流動速率的數値；及 在該預定處理溶液注射率之下，藉由將該注射壓力和 該輸送流動速率調節到該等預定數値，而從該注射系統將 2 紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公H d I I ------^----!ΙΙ --Aw (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 508637 A8 B8 C8 __ D8 六、申請專利範圍 該處理溶液注入該輸送供應系統。 10·如申請專利範圍第9項之方法，其中該輸送流率係 維持在大致固定的速率。 11·一種用於製備化學處理溶液之方法，該化學處理溶 液含有一輸送流體及至少一處理溶液，其用於處理電子元 件，該方法包含下列步驟： 產生伴隨一注射系統之處理溶液體積、處理溶液之注 射壓力和注射範圍閥之位置等資料，以及伴隨以時間爲函 數之輸送供應系統的輸送流動速率； 決定一處理溶液注射率，其係以處理溶液之注射壓力 、注射範圍閥之位置和輸送流動速率爲函數； 決定在一預定處理溶液注射率之下該處理溶液之注射 壓力、該注射範圍閥之位置和該輸送流動速率的數値；及 在該預定處理溶液注射率之下，藉由將該處理溶液之 注射壓力、該注射範圍閥之位置和該輸送流動速率調節到 該等預定數値，而從該注射系統將該處理溶液注入該輸送 供應系統。 12·如申請專利範圍第11項之方法，其中該注射範圍 閥之位置係維持在大致爲固定的位置。 13·-*種用於製備化學處理溶液之方法，該化學處理溶 液含有一輸送流體及至少一處理溶液，其用於處理電子元 件，該方法包含下列步驟： 提供一處理溶液注射系統，其包含至少一注射導管， 該注射導管包含一可加壓處理溶液之容器，其容納一處理 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） d -------^—------^ (請先閱讀背面之注意事項再填寫本頁) 508637 A8 B8 S_ 六、申請專利範圍 溶液，以及一注射範圍閥，其位於該容器之下游； 提供一輸送流體供應系統，其包含一輸送流導管，用 以輸送一輸送流，其中該輸送流導管係在該注射範圍閥之 下游位置以流體連通於該注射導管； 產生該處理溶液通過該注射導管之流動速率、在該處 理溶液之容器中施加於該處理溶液之壓力、該注射範圍閥 之位置以及該輸送流之流動速率等校正資料；及 接著，爲回應該校正步驟而調節該輸送流之流動速率 、施加於該處理溶液之容器的壓力以及該注射範圍閥之位 置等其中之一或多者，用以製備含有該輸送流體及至少一 處理溶液的化學處理溶液。 14.如申請專利範圍第13項之方法，其中該化學處理 溶液係藉由回應該輸送流之流動速率來設定該注射範圍閥 之位置、監測該輸送流之流動速率以及調節施加於該處理 溶液之容器的壓力而製備完成。 1^ ------1----I ^ ---i I I I I i I 1 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）508637 A8B8C8D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application for patent scope 1. A system for processing electronic components, which includes: a slot for containing these electronic components; a transport supply system, which uses Fluidly connected to the tank to supply a transport stream to the tank; an injection system in fluid communication to the transport supply system to introduce a treatment solution into the transport supply system from an upstream position of the tank; and A processor that is operatively linked to the injection system and is used to: i. Generate data such as the volume of the processing solution and the injection pressure accompanying the injection system, and the delivery flow rate accompanying the delivery supply system as a function of time; -Determine a treatment solution injection rate as a function of injection pressure and delivery flow rate; iii. Determine the injection pressure and delivery flow rate below a predetermined treatment solution injection rate; and iv-at the predetermined treatment Below the solution injection rate, by adjusting the injection pressure and the delivery flow rate to the predetermined numbers, from The injection system injects the treatment solution into the delivery supply system. 2. The system according to item 1 of the patent application scope, wherein the injection system comprises a syringe. 3. The system according to item 2 of the scope of patent application, wherein the injection system includes a plurality of injection tubes for introducing a plurality of treatment solutions into the delivery supply system. 4. If the system of item 3 of the scope of patent application, wherein the processor is operatively connected to one or more of the injection tubes, to individually adjust the one paper size to apply the Chinese National Standard (CNS) A4 regulations袼 (210 X 297 public love) τ ------- ^------ (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 508637 C8-One One D8 6. The injection rate of one or more of the injection tubes such as the scope of patent application. 5. The system according to item i in the scope of patent application, wherein the injection system includes a container, a drain and a valve, and the container is used for containing a processing liquid, and the drain is operatively connected to the container. With the transport supply system, 'the valve is established between the drain and the transport supply system to establish fluid communication between the container and the transport supply system.' 6. The system of claim 5 in which the processor is operatively connected to the valve and is used to regulate the valve. 7. The system of claim 1 wherein the processor adjusts the injection rate accompanying the injection system according to one or more predetermined correction parameters. δ. The system of claim 7 wherein the injection system includes a syringe. 9. A method for preparing a chemical solution, the chemical solution containing a transport fluid and at least one processing solution for processing electronic components, the method comprising the steps of: generating a processing solution volume and an injection pressure accompanying an injection system, etc. Data, and the conveying flow rate accompanying the conveying supply system as a function of time; determining a treatment solution injection rate, which is a function of the injection pressure and conveying flow rate as a function of the injection pressure and The number of conveying flow rates; and below the predetermined treatment solution injection rate, by adjusting the injection pressure and the conveying flow rate to the predetermined numbers, the paper system is adapted from the injection system to a Chinese paper standard (CNS) A4 specification (210 χ 297 male H d II ------ ^ ----! ΙΙ --Aw (Please read the precautions on the back before filling this page) Intellectual Property Bureau Staff Consumer Cooperatives Printing 508637 A8 B8 C8 __ D8 VI. Application scope of patent The treatment solution is injected into the conveying and supplying system. A method, wherein the delivery flow rate is maintained at a substantially constant rate. 11. A method for preparing a chemical treatment solution, the chemical treatment solution containing a delivery fluid and at least one treatment solution for treating electronic components, the method The method includes the following steps: generating information such as the volume of the processing solution accompanying an injection system, the injection pressure of the processing solution, and the position of the injection range valve, and the transfer flow rate accompanying the transportation supply system as a function of time; determining a processing solution injection rate, It is a function of the injection pressure of the processing solution, the position of the injection range valve, and the delivery flow rate. It determines the injection pressure of the treatment solution, the position of the injection range valve, and the delivery flow rate at a predetermined treatment solution injection rate. Count; and below the predetermined treatment solution injection rate, by adjusting the injection pressure of the treatment solution, the position of the injection range valve, and the delivery flow rate to the predetermined numbers, from the injection system to the The treatment solution is injected into the transportation and supply system. Method, wherein the position of the injection range valve is maintained at a substantially fixed position. 13 ·-* A method for preparing a chemical processing solution, the chemical processing solution containing a transport fluid and at least one processing solution, which is used for The method for processing electronic components includes the following steps: providing a processing solution injection system including at least one injection catheter, the injection catheter including a container capable of pressurizing a processing solution, which accommodates a processing paper size applicable to a Chinese national standard (CNS ) A4 specification (210 X 297 mm) d ------- ^ ------- ^ (Please read the precautions on the back before filling this page) 508637 A8 B8 S_ VI. Application for patent scope solution And an injection range valve located downstream of the container; providing a delivery fluid supply system including a delivery flow conduit for conveying a delivery flow, wherein the delivery flow conduit is positioned downstream of the injection range valve to Fluid communication with the injection catheter; generating a flow rate of the treatment solution through the injection catheter, pressure applied to the treatment solution in a container of the treatment solution Correction data such as the force, the position of the injection range valve, and the flow rate of the delivery stream; and then, adjusting the flow rate of the delivery stream, the pressure applied to the processing solution container, and the injection range valve in response to the calibration steps One or more of them are used to prepare a chemical treatment solution containing the transport fluid and at least one treatment solution. 14. The method of claim 13 in the patent application range, wherein the chemical treatment solution sets the position of the injection range valve by responding to the flow rate of the delivery stream, monitors the flow rate of the delivery stream, and adjusts the application of the treatment solution. The pressure of the container is completed. 1 ^ ------ 1 ---- I ^ --- i IIII i I 1 (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 paper sizes Applicable to China National Standard (CNS) A4 (210 X 297 mm)
TW90120208A 2000-08-17 2001-08-17 Systems and methods for forming processing streams TW508637B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22587500P 2000-08-17 2000-08-17

Publications (1)

Publication Number Publication Date
TW508637B true TW508637B (en) 2002-11-01

Family

ID=22846612

Family Applications (1)

Application Number Title Priority Date Filing Date
TW90120208A TW508637B (en) 2000-08-17 2001-08-17 Systems and methods for forming processing streams

Country Status (2)

Country Link
AU (1) AU2001283570A1 (en)
TW (1) TW508637B (en)

Also Published As

Publication number Publication date
AU2001283570A1 (en) 2002-02-25

Similar Documents

Publication Publication Date Title
US6261845B1 (en) Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates
US6491763B2 (en) Processes for treating electronic components
US11062922B2 (en) Substrate liquid processing apparatus
US10199240B2 (en) Substrate processing method, substrate processing apparatus, and storage medium
JP2005510054A (en) Improved process control for immersion treatment
JP3725051B2 (en) Substrate processing equipment
TW541595B (en) Treatment method and apparatus of substrate
TW519564B (en) A method and apparatus of treating and drying the surface of an object such as semiconductor substrate
JP4982320B2 (en) Substrate processing equipment
JP2018082099A (en) Substrate processing apparatus, substrate processing method and storage medium
CN103094146B (en) Cleaning equipment, method of measurement and bearing calibration
JP2018074103A (en) Substrate processing device, substrate processing method and recording medium
US20060021634A1 (en) Method and apparatus for creating ozonated process solutions having high ozone concentration
US20020104552A1 (en) Systems and methods for forming processing streams
US11135698B2 (en) Processing apparatus, processing method, and storage medium
TW508637B (en) Systems and methods for forming processing streams
JP7019430B2 (en) Substrate liquid processing equipment
JP7304692B2 (en) Substrate processing method and substrate processing apparatus
JPH0799175A (en) Method and apparatus for supplying treatment liquid
JP2008078501A (en) Drying device and drying method for semiconductor substrate
JP2003071394A (en) High-pressure treatment apparatus
JP4053976B2 (en) Substrate processing method and substrate processing apparatus
KR20100046831A (en) Unit and apparatus for and method of supplying chemical
JP5159738B2 (en) Semiconductor substrate cleaning method and semiconductor substrate cleaning apparatus
JP6552680B2 (en) Processing device, processing method and storage medium

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees