JP2003071394A - High-pressure treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a high-pressure treatment apparatus having a double- structured chamber to the inner chamber of which high pressure withstanding strength is unnecessary. SOLUTION: A substrate 103 is placed in the inner chamber 102 of the double- structured chamber 100 and cleaned by a supercritical fluid in which a liquid chemical to be supplied from a liquid chemical tank 170 is mixed. Another supercritical fluid containing no liquid chemical is supplied to the gap region between an outer chamber 101 and the chamber 102. A communication port 106 is formed on the wall of the chamber 102 so that the supercritical fluid can be made to pass through the port 106 freely between the chamber 102 and the gap region. The pressure of the gap region and that of the chamber 102 to be detected by the first and second pressure detectors 230 and 240 are adjusted by the first and second pressure adjusting valves 210 and 220 under the control of a pressure controlling part 200.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to FPDs (FlatPan) such as semiconductor wafers and glass substrates for liquid crystal display devices.
EL display substrate, photomask glass substrate and optical disc substrate, various substrates in the electronics field such as electronic components (hereinafter simply referred to as “substrate”), and other various members using a high-pressure processing fluid. The present invention relates to a high pressure processing device for processing.

[0002]

2. Description of the Related Art In recent years, a processing fluid in a high-pressure state having a low viscosity, such as supercritical carbon dioxide, is used as a stripping solution or a rinsing solution, along with the flow of defronization in the cleaning of a substrate on which electronic parts and the like are formed. It has been noticed.

Further, due to the recent miniaturization (shrink) of semiconductor devices, the device design rule (technology node) is further miniaturized, and the momentum thereof is further accelerated. In such semiconductor devices, very fine grooves (trench) and holes (holes) are structurally present.
Need cleaning. The former is capacitors (capacitance part of capacitors) and horizontal wiring (planar wiring), and the latter is vertical wiring (three-dimensional wiring, connection between horizontal wiring and horizontal wiring, connection to transistor gate electrode), etc. .

In such a fine structure, the ratio of the width to the depth, that is, the so-called aspect ratio (aspect ratio), has become extremely large, and a groove with a narrow width and a deep groove with a small diameter is formed. There is. This width and diameter are submicron,
Some of them have an aspect ratio of more than 10. After manufacturing such a fine structure on the semiconductor substrate by dry etching or the like, not only the upper flat portion,
On the sidewalls and bottoms of the grooves and holes, resist debris, resist modified by dry etching, compounds of the metal at the bottom and the resist, and oxidized metal remain.

Conventionally, these contaminants have been cleaned with a solution type chemical solution. However, with such a fine structure,
Penetration of chemicals and replacement with pure water cannot be performed smoothly, resulting in poor cleaning. In addition, since the etched insulator prevents a delay of an electric signal due to wiring, a material having a low dielectric constant (so-called Low-k) is used.
Therefore, there is a problem that the low dielectric constant, which is a characteristic of the chemical, deteriorates due to the chemical solution. In addition, when the metal for wiring is exposed, there is a limitation that a chemical solution that dissolves the metal cannot be used.

Supercritical fluids have been attracting attention due to their properties for cleaning such fine structures of semiconductor devices. The supercritical fluid does not remain even if it penetrates into an insulator having a low dielectric constant like a solution-type chemical solution, and therefore does not change its characteristics. Therefore, it can be said that it is very suitable for cleaning fine structures of semiconductor devices, and much attention has been paid to it.

As shown in FIG. 3, a supercritical fluid is a critical pressure Pc or more and a critical temperature Tc or more (hatched portion in the figure).
The state of the substance obtained in. Since this supercritical fluid has an intermediate property between liquid and gas, it can be said that it is suitable for precise cleaning. That is, since the supercritical fluid has a density close to that of a liquid and high solubility, it is effective for cleaning organic components, and since it has excellent diffusibility like a gas, it can be uniformly cleaned in a short time. Since the viscosity is low, it is suitable for cleaning fine parts.

Carbon dioxide, water, nitrous oxide, ammonia, ethanol and the like are used as the substance to be converted into the supercritical fluid. Carbon dioxide has a critical pressure Pc of 7.
It is often used because it has a pressure of 4 MPa and a critical temperature Tc of about 31 ° C., a supercritical state can be obtained relatively easily, and it is nontoxic. FIG. 3 is a graph showing a phase equilibrium diagram of carbon dioxide as described above.

On the other hand, in cleaning the substrate, heavy metal stains are one of the stains that must be particularly removed. In the conventional cleaning using a supercritical fluid, since the pressure-resistant cleaning tank that stores the object to be cleaned is made of metal such as stainless steel,
There is a possibility that heavy metals from the pressure-resistant cleaning tank may dissolve into the supercritical fluid, resulting in contamination of the object to be cleaned. However, if a non-metallic corrosion-resistant cleaning tank is used, the pressure-resistant structure increases the scale of the apparatus.
In addition, the reliability of pressure resistance is not so high.

Therefore, a supercritical fluid apparatus using a chamber having a double structure of a non-metal inner tank and a pressure-resistant cleaning tank has been proposed. FIG. 4 is a schematic view of a supercritical fluid processing apparatus using such a double structure chamber according to the conventional example, and is disclosed in Japanese Patent Application Laid-Open No. 11-156311.

In FIG. 4, the cleaning tank 1 has a double structure and has a non-metal inner tank 5 made of a non-metal material inside. An object to be cleaned 9 is placed inside the non-metal inner tank 5, and is shielded when the non-metal inner tank lid 19 is closed to prevent the fluid from entering and leaving the gap area 11.
At the same time, a supercritical fluid as a cleaning solvent is introduced and drawn into the gap region 11 inside and outside the non-metallic inner tank 5,
The pressure inside and outside the non-metallic inner tank 5 is kept substantially constant.

The cleaning solvent is newly supplied from the container 10 through the partition valve 13, is compressed by the high-pressure pump 7 and is heated by the heater 6, and the partition valve 12
It is introduced into the cleaning tank 1 via. When the cleaning is completed, the sluice valve 14 is opened and the dirty cleaning solvent is introduced into the separation tank 2. In the separation tank 2, the pressure is reduced and the gas phase and the liquid / solid phase are separated. The cleaning solvent in the gas state is
For reuse, the liquefying device 3 is liquefied via the pressure reducing valve 16 and stored in the liquid reservoir 4.

As described above, in the double-structured chamber of the conventional supercritical fluid processing apparatus, the internal and external pressures thereof are made substantially the same, and the sealed non-metal inner tank is used. As a result, it is possible to prevent the supercritical fluid from moving from the outside to the inside of the inner tank and prevent contamination of the object to be cleaned while using the inner tank having low strength.

[0014]

However, the above conventional example has the following problems. In the above-mentioned conventional example, when the lid 19 for the non-metal inner tank is closed, the non-metal inner tank 5 is shielded to be in a closed state, but the supercritical fluid cleaning is performed under a high pressure state of several tens of atmospheres as described above. Therefore, a slight pressure control deviation inside and outside the non-metal inner tank 5 causes an excessive pressure difference and the inner tank 5 is destroyed.

Therefore, high precision is required for the pressure control, and in order to maintain the sealed state safely and surely,
A considerable pressure resistance is also required for the non-metal inner tank 5. This leads to an increase in size and cost of the device.

Therefore, the present invention has been made in view of the above-mentioned problems, and a high-pressure processing apparatus having a double structure chamber in which the inner non-metal inner tank is not required to have a large pressure resistance while preventing contamination of the object to be processed. To provide.

[0017]

Means for Solving the Problems and Effects of the Invention In order to achieve the above object, the first invention is a high-pressure processing apparatus for processing an object to be processed using a high-pressure fluid or a mixture of a high-pressure fluid and a chemical as a processing fluid. The inner wall is made of a non-metallic material, and is made of a pressure-resistant material and an internal chamber capable of storing an object to be processed, and a predetermined gap area is formed between the inner chamber and the inner chamber. A high pressure processing section of a dual structure having an outer chamber that houses the inner chamber therein, as formed, and an interior of the inner chamber;
And a fluid supply means for supplying the processing fluid into the gap area, wherein the internal chamber is provided with a passage opening that communicates the interior with the gap area, and the processing fluid supplied by the fluid supply means flows therethrough. Characterize.

As described above, according to the first aspect of the present invention, even if the pressure difference between the internal chamber and the external chamber is generated for some reason, the processing fluid can freely flow in and out through the passage port, so that the continuous operation is possible. There is little risk that the pressure difference will increase. Therefore, even if the pressure resistance of the internal chamber is low, the device can be safely configured, so that the device can be downsized and the cost can be reduced.

A second aspect of the invention is an aspect according to the first aspect of the invention, in which the fluid supply means includes a first fluid supply means for supplying the first processing fluid into the gap region, and a second processing means. Second fluid supply means for supplying a fluid to the inside of the internal chamber.

As described above, according to the second aspect of the invention, the processing fluid is supplied to the inside of the internal chamber and the gap region by different fluid supply means. As a result, a pressure difference is likely to occur, but there is little risk that the pressure difference will continuously increase as in the first aspect of the invention.

Further, in the above-described supercritical fluid cleaning method, in order to obtain a desired cleaning effect, a chemical or the like (hereinafter referred to as an auxiliary agent) depending on the object to be cleaned and the stain to be cleaned is referred to as an auxiliary agent. It is generally used by mixing with a critical fluid.
Therefore, according to the second invention, it is possible to supply the supercritical fluid as the first processing fluid into the gap region and the mixture of the high-pressure fluid and the drug as the second processing fluid into the inner chamber.

Here, the auxiliary agent will be described. Since the carbon dioxide fluid has a dissolving power of about hexane, it is easy to remove water and fats and oils from the surface of the substrate, but its dissolving power for polymer contaminants such as resist and etching polymer is insufficient. It is difficult to remove and remove these pollutants with carbon dioxide alone. Therefore, a chemical agent (auxiliary agent) is further added to carbon dioxide, and the auxiliary agent is used to remove and remove the polymer contaminants.

A third invention is an invention dependent on the second invention, wherein the pressure of the first processing fluid in the gap region is equal to or higher than the pressure of the second processing fluid in the internal chamber. It is characterized by further comprising pressure control means for controlling.

As described above, according to the third invention, the processing fluid flowing inside the internal chamber does not flow out to the outside of the internal chamber. Therefore, the inner wall of the outer chamber is not contaminated with the processing fluid inside the inner chamber containing contaminants. Further, even if the pressure resistance of the internal chamber is low, the device can be configured safely, so that the device can be downsized and the cost can be reduced.

Here, too, it is possible to use a supercritical fluid to which an auxiliary is added as a cleaning solvent, but the auxiliary often has corrosive properties for cleaning heavy metals and the like. Therefore, if a general pressure-resistant cleaning tank made of metal is used as it is, the cleaning tank will be corroded or deteriorated, and the metal constituting the cleaning tank will be dissolved in the supercritical fluid to contaminate the object to be treated. Become.

Further, when the inner chamber is made of a non-metallic material as in the present invention, even if it is possible to prevent contamination of the object to be processed placed in the inner chamber, a metal pressure resistant material is used. In the constructed outer chamber, the inner wall of the outer chamber is inevitably corroded or deteriorated by the auxiliary agent, and the durability of the outer chamber is significantly reduced.

Therefore, according to the third aspect of the invention, the supercritical fluid containing the auxiliary agent flowing inside the internal chamber does not flow out to the outside of the internal chamber. Therefore, even if the pressure-resistant material is an external chamber made of metal or the like, the inner wall is not corroded or deteriorated by the auxiliary agent, and the durability of the external chamber can be prevented from lowering.

A fourth invention is an invention dependent on the second invention or the third invention, wherein the passage port is downstream of the object to be processed along the flow direction of the second processing fluid. It is characterized by being opened at a position.

As described above, according to the fourth aspect of the invention, even if the first processing fluid that flows by touching the inner wall of the outer chamber made of metal or the like flows into the inner chamber,
Does not reach the object to be processed placed on the upstream side of the processing fluid. Therefore, it is possible to prevent the transfer of the contamination to the object to be processed by the processing fluid flowing by touching the inner wall made of metal, and it is possible to easily cope with the precision cleaning process.

The high-pressure fluid used in the present invention may have a predetermined high-pressure state of 1 MPa or more, and is preferably a fluid having high density, high solubility, low viscosity and high diffusivity. is there. Carbon dioxide is preferable in terms of safety, price, and ease of putting into a supercritical state.

The use of high-pressure fluid has a high diffusion coefficient,
This is because the dissolved pollutants can be dispersed in the medium, and when the pressure is made higher to make it a supercritical fluid, it has an intermediate property between a gas and a liquid, and is even more suitable for fine pattern parts. This is because it can penetrate further. Therefore, it goes without saying that it can be carried out using a subcritical fluid or a high-pressure gas. In addition, the high-pressure fluid has a density close to that of a liquid and can contain a much larger amount of additive than that of a gas.

Further, in the cleaning step and the rinse step after the cleaning, it is preferable to supply the processing fluid whose pressure is increased to 5 MPa or more. And it is preferable to carry out at 5 to 30 MPa, more preferably 7.1 to 20 MPa.

The subcritical fluid generally means a liquid in a high pressure state in a region before the critical point in FIG.
Fluids in this region may be distinguished from supercritical fluids, but physical properties such as density change continuously, so
There is no physical boundary and it may be used as a subcritical fluid. Those existing in the subcritical or, in a broad sense, in the supercritical region near the critical point are also called high-density liquefied gas.

[0034]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic block diagram of a high-pressure processing apparatus according to an embodiment of the present invention. In the figure, the arrow indicates the flow direction of the fluid. In FIG. 1, the high-pressure processing apparatus includes an external chamber 101 composed of a pressure resistant material such as metal, a non-metal material,
For example, the internal chamber 10 made of a corrosion resistant material such as quartz
And a dual structure chamber 100 having two.

Then, the high-pressure processing apparatus is equipped with a cylinder 125.
, Condenser 130, liquid reservoir 140, and pressure increasing means 150
The heater 160, the chemical solution mixer 190, the double structure chamber 100, the decompressor 110, and the separation / recovery tank 120.

First, each component of the high pressure processing apparatus of this embodiment will be described. The cylinder 125 is filled with liquid carbon dioxide used for cleaning the substrate. Condenser 130
Cools the gas carbon dioxide supplied from the separation and recovery tank 120 to liquefy it. The pressure increasing means 150 is the condenser 13
The liquid carbon dioxide liquefied at 0 is raised to a predetermined pressure equal to or higher than the critical pressure Pc. The heater 160 heats the liquid carbon dioxide whose pressure is increased by the pressure increasing means 150 to a predetermined temperature equal to or higher than the critical temperature Tc. As a result, liquid carbon dioxide changes to a supercritical fluid. This supercritical carbon dioxide corresponds to the high pressure fluid of the present invention.

Further, the supercritical fluid is circulated and supplied inside the apparatus as described later. Liquid carbon dioxide supplied from the cylinder 125 and gaseous carbon dioxide supplied from the separation and recovery tank 120 are liquefied by the condenser 130,
It is accumulated in the liquid reservoir 140. The accumulated liquid carbon dioxide is pressurized to a predetermined pressure by the pressure increasing means 150 such as a pressure pump, heated to a predetermined temperature by the heater 160 to become a supercritical fluid, and the SCF supply line 310.
Sent to.

The SCF supply line 310 is bifurcated midway, one of which is connected via the first pressure adjusting valve 210.
It is connected to the gap area between the inner chamber 102 and the outer chamber 101, and the other is connected to the chemical liquid mixer 190.

The chemical solution tank 170 is connected to the chemical solution mixer 190.
Specifically, two types of chemical liquids are supplied via the chemical liquid pump 180. In this example, in order to remove the polymer contaminants such as the resist and the etching polymer attached to the semiconductor substrate, the chemical liquid was added in consideration of the fact that the cleaning power is insufficient only with the high-pressure fluid of carbon dioxide. A cleaning process is performed with the process fluid.

The chemical liquid to be added is referred to as an auxiliary agent. As the auxiliary agent, it is preferable to use a basic compound as a cleaning component. This is because it has a function of hydrolyzing a polymer substance that is frequently used as a resist, and has a high cleaning effect. Specific examples of the basic compound include quaternary ammonia hydroxide, quaternary ammonia fluoride, alkylamine, alkanolamine, hydroxylamine (NH ₂ OH) and ammonium fluoride (NH ₂ F). 1 selected
One or more compounds may be mentioned. The cleaning component is preferably contained in an amount of 0.05 to 8 mass% with respect to the high pressure fluid.

When the cleaning component such as the basic compound is incompatible with the high-pressure fluid, it is preferable to use a compatibilizing agent which can be an aid for dissolving or uniformly dispersing the cleaning component in carbon dioxide as a chemical solution. .

The compatibilizing agent is not particularly limited as long as it can compatibilize the cleaning component with the high-pressure fluid, but alcohols such as methanol, ethanol and isopropanol, and alkyl sulfoxides such as dimethyl sulfoxide are preferred. In the washing step, the compatibilizer may be appropriately selected within the range of 10 to 50 mass% of the high pressure fluid.

The kind and number of the auxiliary agents can be freely set based on the target substrate, the purpose of cleaning, and the like. In addition,
These drug solutions correspond to the drug of the present invention.

The chemical solution mixer 190 mixes the supplied chemical solution (auxiliary agent and compatibilizer) with the generated supercritical carbon dioxide at a predetermined ratio to generate a supercritical fluid containing the chemical solution.
The generated supercritical fluid containing the chemical liquid is supplied to the inside of the internal chamber 102 of the double structure chamber 100 by the SCF supply line 320 containing the chemical liquid via the second pressure control valve 220.

In the double-structured chamber 100 as a processing tank, the substrate is cleaned by using supercritical carbon dioxide in which the generated chemical solution is mixed.

The decompressor 110 is a dual structure chamber 100.
The supercritical carbon dioxide mixed with the chemical liquid after the cleaning treatment and the supercritical carbon dioxide not mixed with the chemical liquid are decompressed. As a result, supercritical carbon dioxide is vaporized. In the separation / recovery tank 120, carbon dioxide vaporized by the decompressor 110 is separated from the chemical liquid (auxiliary agent and compatibilizer) and contaminants, and gaseous carbon dioxide is supplied to the condenser 140 again.

A substrate 103, which is an object to be processed, is stored in the internal chamber 102. The substrate 103 is cleaned with the supercritical fluid containing the chemical solution supplied from the SCF supply line 320 containing the chemical solution. Also, the internal chamber 102
The supercritical fluid in which the chemical solution is not mixed is supplied to the gap region between the external chamber 101 and the external chamber 101 from the SCF supply line 310.

Therefore, only the supercritical fluid in which the chemical solution is not mixed comes into contact with the inner wall of the outer chamber 101, and the corrosion or deterioration of the outer chamber 101 due to the chemical solution does not occur. This means that the internal chamber 10
The same can be done not only when the passage opening is not opened in 2 but also when it is opened. The detailed configuration of such a dual structure chamber 100 will be described later.

Each of the above configurations corresponds to the configuration of the present invention as follows. That is, the chemical solution-containing SCF supply line 320 is the second fluid supply means, the chemical solution-containing supercritical fluid is the second processing fluid, the SCF supply line 310 is the first fluid supply means, and the chemical solution-free supercritical fluid. Corresponds to the first processing fluid.

Here, the first and second pressure regulating valves 21
0 and 220 adjust the pressure in the gap area between the inner chamber 102 and the outer chamber 101 and the pressure in the inner chamber 102, respectively. The respective pressures are detected by the first pressure detector 230 provided on the SCF supply line 310 and the second pressure detector 240 provided on the chemical-filled SCF supply line 320.

The first and second pressure detectors 230
And 240 may be provided at appropriate predetermined positions in the double structure chamber 100, as long as they can detect the pressure in the gap area with the outer chamber 101 and the pressure in the inner chamber 102, respectively. Further, the pressure in the inner chamber 102 and the pressure difference in the gap area between the inner chamber 102 and the outer chamber 101 may be measured by a differential pressure gauge.

The pressure values detected by the first and second pressure detectors 230 and 240 are used as the pressure control unit 200.
Sent to. The pressure control unit 200 includes the first pressure detector 2
The pressure value PO detected by 30 and the pressure value PI detected by the second pressure detector 240 are compared, and P
The first and second pressure regulating valves 210 and 220 are controlled so that O ≧ PI. However, the pressure difference value (PO-PI) is a value within a predetermined range that does not destroy the internal chamber 102, and is typically a relatively small predetermined value. The reason for performing such pressure control will be described later. The first and second pressure control valves 210 and 220, the first and second pressure detectors 230 and 240, and the pressure control section 200 correspond to the pressure control means of the present invention.

The internal chamber 10 supplied as described above
The chemical-containing supercritical fluid in 2 is discharged by the chemical-containing SCF discharge line 340. Further, the supercritical fluid in the above-mentioned gap area is discharged by the SCF discharge line 330. These discharged supercritical fluids are decompressed by the decompressor 110 via the partition valve 250, gasified, separated in the separation recovery tank 120, and discharged. The gasified carbon dioxide is sent to the condenser 130 and reused as described above.

Next, the detailed structure of the double structure chamber 100 will be described. FIG. 2 shows a dual structure chamber 100.
3 is a schematic partial cross-sectional view showing the detailed structure of FIG. The same components as those of FIG. 1 are designated by the same reference numerals in FIG. 2 and their description is omitted. Also in the figure, the arrows indicate the flow direction of the fluid.

In FIG. 2, the substrate holding unit 104 is provided inside the internal chamber 102 and holds the substrate 103. Although the substrate 103 is illustrated as being one, it may be a plurality of substrates and may be an object to be cleaned other than the substrate. The joint 105a connects the auxiliary SCF supply line 320 and the internal chamber 102, and the joint 105b connects the chemical SCF discharge line 340 and the internal chamber 102.

The passage port 106 extends along the flow direction of the supercritical fluid, that is, along the flow direction of the supercritical fluid containing the chemical liquid inside the internal chamber 102 and along the flow direction of the supercritical fluid within the clearance region. , One or more openings are provided on the downstream side of the substrate 103. Passage 106
The shape may be a hole shape or a slit shape, and its size is not limited.

The passage port 106 enables the supercritical fluid to freely flow in and out of the inner chamber 102. However, as described above, the pressure outside the internal chamber 102 is controlled by the pressure control unit 200 to be slightly higher than the pressure inside the internal chamber 102. Therefore, as shown by the arrow in the figure, the supercritical fluid is
It will flow from the outside to the inside of the inner chamber 102. The above dual structure chamber 100 corresponds to the double structure high-pressure processing unit of the present invention.

Next, a substrate cleaning operation performed in the high-pressure processing apparatus according to this embodiment having this structure will be described. In addition, although the case where carbon dioxide is used as the high-pressure fluid is described in the present embodiment, other substances such as nitrous oxide, alcohol, ethanol, and water that can change to a supercritical fluid state may be used.

First, the substrate 103 is placed on the substrate holder 104. When the substrate 103 is installed, the following cleaning process is started.

First, the carbon dioxide in the cylinder 125 is 5
It is stored as a liquid at a pressure of up to 6 MPa, and this liquid carbon dioxide is supplied to the liquid reservoir 140 via the condenser 130 and stored as a liquid. The liquid carbon dioxide is pressurized to a pressure equal to or higher than the critical pressure Pc in the pressure increasing means 150, further heated to a predetermined temperature equal to or higher than the critical temperature Tc in the heater 160, becomes a supercritical fluid, and is sequentially sent to the chemical liquid mixer 190. Here, the predetermined pressure and temperature can be freely set based on the type of the substrate to be cleaned and the desired cleaning performance.

The chemical liquid pump 180 supplies the chemical liquid to the chemical liquid mixer 190. The chemical solution mixer 190 mixes the supplied chemical solution with supercritical carbon dioxide, and the supercritical carbon dioxide in which the chemical solution is mixed at a predetermined concentration is mixed with the internal chamber 10.
Send to 2. On the other hand, at the same time, supercritical carbon dioxide is introduced from the SCF supply line 310 into the gap area with the external chamber 101.

In the double structure chamber 100, the substrate is cleaned by the supercritical carbon dioxide mixed with the high-pressure chemical solution, and the substrate is cleaned by circulating it for a predetermined period. The circulating cleaning of the substrate is performed for the purpose of shortening the time required for cleaning.

During this substrate cleaning process, the pressure controller 20
Zero controls the pressure in the interstitial region above the pressure in the internal chamber 102. The pressure control unit 200 has a first
Pressure value PO detected by the pressure detector 230 of
Pressure value PI detected by the second pressure detector 240
Are compared with each other, and the first and second pressure adjusting valves 210 and 220 are controlled so that PO ≧ PI.

In this way, the passage opening 1 is provided in the internal chamber 102.
If 06 is opened and the pressure control as described above is performed,
The chemical-containing supercritical fluid flowing inside the inner chamber 102 does not flow out of the inner chamber 102 during the process. Therefore, the inner wall of the outer chamber 101 is not corroded or deteriorated by the chemical liquid, and the durability of the outer chamber 101 is not deteriorated.

Further, since the supercritical fluid in which the chemical liquid is not mixed is supplied into the gap area, the inner wall of the outer chamber made of metal or the like is merely contacted with the supercritical fluid in which the chemical liquid is not mixed. is there. Therefore, it is possible to prevent corrosion or deterioration of the external chamber due to the chemical solution.

Further, even if the pressure control is disturbed for some reason, the supercritical fluid can freely flow in and out through the passage port 106, so that the pressure difference is unlikely to continuously increase. Therefore, the device can be safely configured even if the internal chamber 102 has a low pressure resistance, so that the device can be downsized and the cost can be reduced.

Further, as shown in FIG. 2, a passage port 106 is opened at a position downstream of the substrate 103 along the flow direction of the supercritical fluid. Therefore, even if the supercritical fluid that flows by touching the inner wall of the metal outer chamber 101 flows into the inner chamber 102, it does not reach the substrate 103 placed on the upstream side. Therefore, it is possible to prevent the contamination transfer to the substrate 103 due to the supercritical fluid flowing by touching the inner wall made of metal, and it is possible to easily cope with the precision cleaning process.

As described above, according to the present invention, it is possible to realize the high-pressure processing apparatus having the double structure chamber 100 in which the internal chamber 102 made of non-metal or the like is not required to have a large pressure resistance.

The present invention is not limited to the above-described embodiments and modifications, but can be implemented in other forms as follows.

(1) In the above embodiment, the decompressor 110 is arranged on the downstream side of the double structure chamber 100 to vaporize the supercritical fluid and then send it to the separation / recovery tank 120. The pressure may be reduced in the tank, and then gas-liquid separation may be performed.

(2) Although the high-pressure processing apparatus has been described for cleaning the substrate, it may be used for drying the substrate or developing the substrate. That is, the dual structure chamber 100
The substrate after rinsing and washing (water washing) is loaded and installed. This 2
The moisture adhering to the substrate in the heavy structure chamber 100 is dissolved and removed in the high-pressure processing fluid in the supercritical or subcritical state. After that, the processing fluid is recovered and reused as in the above-mentioned embodiment.

When the high-pressure processing apparatus of the present invention is used for drying or developing, xylene, methyl isobutyl ketone, quaternary ammonium compound, fluorine-based polymer, etc., depending on the properties of the resist to be dried or developed. Can be used as the liquid medicine.

Besides, it is possible to make various design changes within the scope of the technical matters described in the claims.

[Brief description of drawings]

FIG. 1 is a schematic block diagram of a high-pressure processing apparatus according to an embodiment of the present invention.

2 is a schematic partial cross-sectional view showing a detailed structure of the dual structure chamber 100. FIG.

FIG. 3 is a graph showing a phase equilibrium diagram of carbon dioxide used as a supercritical fluid.

FIG. 4 is a schematic view of a conventional supercritical fluid processing apparatus using a chamber having a double structure of a corrosion resistant inner tank and a pressure resistant cleaning tank.

[Explanation of symbols]

100 double structure chamber 101 External chamber 102 internal chamber 103 substrate 104 substrate holder 105a, 105b joint 106 Passage 110 pressure reducer 120 separation collection tank 130 condenser 140 liquid reservoir 150 boosting means 160 heater 170 Chemical tank 180 chemical pump 190 Chemical mixer 200 Pressure controller 210 First Pressure Control Valve 220 Second pressure control valve 230 First Pressure Detector 240 Second pressure detector 250 gate valve 310 SCF supply line 320 SCF supply line containing chemicals 330 SCF supply and discharge line 340 SCF discharge line containing chemical liquid

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kimitsugu Saito             4-chome Tenjin, which runs up to Teranouchi, Horikawa-dori, Kamigyo-ku, Kyoto             1 Kitamachi No. 1 Dai Nippon Screen Manufacturing Co., Ltd.             Inside the company (72) Inventor Yusuke Muraoka             4-chome Tenjin, which runs up to Teranouchi, Horikawa-dori, Kamigyo-ku, Kyoto             1 Kitamachi No. 1 Dai Nippon Screen Manufacturing Co., Ltd.             Inside the company (72) Inventor Kazuo Mizobata             4-chome Tenjin, which runs up to Teranouchi, Horikawa-dori, Kamigyo-ku, Kyoto             1 Kitamachi No. 1 Dai Nippon Screen Manufacturing Co., Ltd.             Inside the company (72) Inventor Ryuji Kitamon             4-chome Tenjin, which runs up to Teranouchi, Horikawa-dori, Kamigyo-ku, Kyoto             1 Kitamachi No. 1 Dai Nippon Screen Manufacturing Co., Ltd.             Inside the company (72) Inventor Yoichi Inoue             2-3-3 Niihama, Arai-cho, Takasago, Hyogo Prefecture             Takasago Works, Kobe Steel, Ltd. (72) Inventor Hisanori Oshiba             2-3-3 Niihama, Arai-cho, Takasago, Hyogo Prefecture             Takasago Works, Kobe Steel, Ltd. (72) Inventor Yoshihiko Sakashita             2-3-3 Niihama, Arai-cho, Takasago, Hyogo Prefecture             Takasago Works, Kobe Steel, Ltd. (72) Inventor Katsumitsu Watanabe             2-3-3 Niihama, Arai-cho, Takasago, Hyogo Prefecture             Takasago Works, Kobe Steel, Ltd. F term (reference) 3B201 AA02 BB21 BB82 BB90 BB92                       BB95

Claims (4)

[Claims] 1. A high-pressure processing apparatus for processing an object to be processed using a high-pressure fluid or a mixture of a high-pressure fluid and a chemical as a processing fluid, wherein an inner wall is made of a non-metallic material, And an external chamber which is made of a pressure resistant material and which stores the internal chamber therein so that a predetermined gap region is formed between the internal chamber and the internal chamber. A high-pressure processing unit having a double structure, and a fluid supply means for supplying the processing fluid into the inside of the internal chamber and the inside of the gap region, the internal chamber passing through the inside and the gap region. A high-pressure processing apparatus having an opening, through which a processing fluid supplied by the fluid supply means flows. 2. The fluid supply means comprises a first fluid supply means for supplying a first processing fluid into the gap region, and a second fluid supply for supplying a second processing fluid into the interior of the internal chamber. The high-pressure processing apparatus according to claim 1, further comprising a supply unit. 3. The pressure control means for controlling the pressure of the first processing fluid in the gap region to be equal to or higher than the pressure of the second processing fluid in the internal chamber. The high-pressure processing apparatus according to 2. 4. The method according to claim 2, wherein the passage port is opened at a position downstream of the object to be cleaned along a flow direction of the second processing fluid. The high-pressure processing apparatus according to item 3.