TW506035B - Probe set and the manufacturing method thereof - Google Patents

Abstract

The present invention discloses a probe set and the manufacturing method thereof, which is suitable for the processing of IC. The inventive probe set is made by the semiconductor technique on the semiconductor substrate larger than the wafer. Because the semiconductor technique is rather mature and the invention belongs to the wafer level manufacturing, a large amount of probe sets can be manufactured on a piece of substrate with a rather low cost. The invention can be used for wafer level measurement, and the application is rather convenient and with greater variance. Moreover, by controlling the processing parameters, a large amount of probe sets can be manufactured with desired characteristics and with excellent precision and uniformity.

Description

506035 A7 —-— B7_ V. Description of the invention () Field of the invention: Please read the notes on the back before filling out this page) The present invention relates to a probe set and its manufacturing method, and particularly to A method for manufacturing probe level using semiconductor process technology. BACKGROUND OF THE INVENTION: In the manufacturing process of integrated circuit (Ic), in order to achieve the best yield and component quality, product testing is performed at different stages of the process. At the same time, we use precision analysis equipment to conduct various quality control inspections throughout the manufacturing process to detect defects in the integrated circuit during the manufacturing process and find out the causes of the defects, so as to ensure that the product quality meets the standards. Further improve production yield. Therefore, in the manufacturing process of integrated circuits, product testing is an important step to ensure the product yield of integrated circuit components and to establish effective data to provide engineering analysis. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs to distinguish the timing of the testing. The testing of integrated circuit products mainly includes Chip Probe (CP, also known as Wafer Sort) and finished product testing (F ina 1 T est 'Also known as package T est) two phases. Wafer probing is performed when the wafer is in the form, and the good and bad of the die are distinguished before the integrated circuit chip packaging, so as to avoid unnecessary waste. The paper size of the finished product test is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm). 5. Description of the invention (Beijing is implemented after the integrated circuit chip is packaged to determine the integrated circuit chip after the packaging process. It still meets the specifications. Furthermore, the main function of the 'wafer pin test' step is to detect the defects in the integrated circuit during the manufacturing process and find out the reason to ensure the product yield and provide test data as the integrated circuit For design and manufacturing analysis. Wafer pin testing is used to test the M θ circle and the ® month B circle, and to screen the good and bad products on the wafer. Therefore, when testing the memory wafer Laser repairing can be performed on defective products that can still be repaired, to the south of the wafer yield. Because the 'wafer pin test is the electrical function test of the chip before the integrated circuit chip is packaged, and Filter out electrical wafers in advance to reduce the burden of defective products on manufacturing costs. Because the main purpose of a good wafer pin is to test the crystallinity of each wafer and the Then, check whether it is a defective product. If it is not, use a little ink for identification. In addition, the other one is: test the yield of the product, and judge the wafer based on the yield. Manufacturing ^ Is there a mistake. When the product yield is high, it means that everything in the wafer manufacturing process is too low, it means that there are problems in some steps during the wafer manufacturing process. 'It must be checked as soon as possible. When testing the chip, first use the tester to send out the paper to be tested. The paper size is applicable to Chinese National Standards (CNs) A4 specifications (21〇χ297 公 楚) (Please read the precautions on the back before filling this page). Printed by the Intellectual Property Bureau Employee Cooperative Cooperative 506035 V. Description of the invention (The electrical signals required for the tablet, and the test probe received the test head connected to the test electromechanical connection Acceptance test application &# 令 u 传 轮到On the chip under test. When the electrical test result from the "test crystal" type machine is used, the chip under test will generate a probe with a response value of s, and the response will be electrical. News passed to the test machine. Test machine The customer σ is very responsive to the electrical signals returned, ® the inscription of the electrical test results of the port 0, and the control details in the testing machine, which are all written by the control agency for the chip under test. The test program and test of integrated circuits are very dependent on test equipment, and most of these test equipment are provided by test equipment manufacturers, and the test equipment and equipment provided by test equipment manufacturers are quite responsible. Moreover, with the shrinkage of the integrated circuit product's op cycle, and the increasing complexity of integrated circuit functions, the price of integrated circuit test equipment has become more and more responsible. The purpose and summary of the invention: (Please Read the precautions on the back before filling this page.) Test equipment for printing cloud-on-chip ICs printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and the Ministry of Economic Affairs is too expensive, resulting in a huge burden on process costs. Therefore, the main object of the present invention is to provide a probe set manufactured by using a semiconductor manufacturing process instead of an expensive test probe provided by a test equipment supplier. Because the semiconductor process' required to manufacture the probe set of the present invention costs much less than the cost of purchasing a probe from an equipment manufacturer. As a result, process costs can be significantly reduced. 506035

V. Description of the invention () Another object of the invention is to provide a method for manufacturing a probe set, which (please read the precautions on the back of t before filling out this page) is using the I-conductor process in a size slightly larger than the chip to be tested. A probe set is formed on the substrate of the wafer. Because the semiconductor process technology has matured, and the pattern size can be controlled at A level. Therefore, the process parameters can be adjusted and controlled according to requirements, and a probe set with high precision and average sentence degree can be obtained. In addition, since the present invention is a wafer-level manufacturing, a large number of probe sets can be manufactured simultaneously on a single substrate. As a result, manufacturing costs can be significantly reduced. Another object of the present invention is to obtain a wafer-level probe set by the method of manufacturing the probe set of the present invention. Because of the round-sized probe set of the present invention, the position of the probe corresponds to each pad of each wafer on the wafer. Therefore, when performing wafer testing, only one alignment is required to align the probes to all the wafers on the wafer, and the need to align them one by one can not only reduce the complexity of wafer testing, but also greatly reduce the wafer testing time. Time schedule. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above-mentioned purpose, the present invention further provides a probe set suitable for detecting a chip, wherein the probe set is electrically connected to an external test system, and the detection The needle group includes at least: a substrate, wherein the substrate is an insulating material; a first metal layer is located on the substrate; a first oxide layer is located on the first metal layer, and the first metal layer includes at least a plurality of The first opening is applied to the Chinese National Standard (CNS) A4 specification (210X297) on a 5ΐ paper scale. 506035 A7 B7 V. Description of the invention ((Please read the precautions on the back before filling this page) and multiple third openings. And a portion of the first metal layer is exposed; the second metal layer covers a portion of the first oxide layer, all of the first openings, and a portion of the first metal layer exposed by the first openings; a third oxide layer covers The second metal layer 'and the third oxide layer include at least a plurality of second openings and a plurality of cone-shaped structures, wherein the second openings expose a part of the first metal layer; and a third metal layer The third oxide layer on the cover portion, all the second openings, all the third openings, and the above-mentioned tapered structure, wherein each of the tapered structure and the third oxide layer covering it constitute the probe of the present invention. In addition, in order to obtain a cone-shaped structure, a third oxide layer is formed using a high density chemical vapor deposition technique. On the other hand, in order to reduce the loss rate of the probe and strengthen the structure of the probe, the first The material of the tri-metal layer is a hard metal or metal compound, such as tungsten (W) or titanium nitride (TiN). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. According to the other purposes described above, the present invention further provides A method for manufacturing a probe set includes at least: providing a substrate and insulating the material of the substrate, wherein the substrate has been covered with a first metal layer and a first oxide layer sequentially stacked; forming a plurality of A first opening is formed in the first oxide layer, and a part of the first metal layer is exposed; a second metal layer is formed to cover the first oxide layer, and the first metal layer is exposed. Part and the first opening; performing a high-density plasma chemical vapor deposition step to form a third oxide layer covering the second metal layer and another part of the first oxide layer 'and forming the second metal layer Multiple cone-shaped structures; forming multiple 6 paper sizes applicable to Chinese National Standard (CNS) A4 specifications (210X297 mm) 506035 A7 B7 V. Description of the invention (Several second openings in the third oxide layer and approximately exposed Part of the layer, forming a plurality of third openings in the portion of the first oxide layer covered by the third oxygen and the third oxide layer, and approximately exposing another portion of the first gold; and forming a portion of the third metal layer covering portion The first layer, the cone-shaped structure, the exposed portion of the first metal layer, the second exposed portion, all the second openings, and all the openings, and fill the second openings and the third openings. The step of forming the second oxide layer includes at least forming a second covering layer on the second metal layer, and then defining the second oxide layer to form a plurality of bumps on the second layer. Furthermore, the third oxide layer is more It includes covering bumps' so that the aforementioned cone-shaped structure is formed on these bumps. Schematic description: $ 3 metallization layer belongs to the three gasification metal layer $ 3 open 'in the shape of the oxide layer metal layer & the 4b C Please read the precautions on the back, then fill in, write this page > Economy The preferred embodiment of the present invention printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives will be explained in more detail in the following explanatory text, in which: Figures 1 to 6 are drawings showing one of the present inventions. A cross-sectional manufacturing flow chart of the probe set of the preferred embodiment; and FIG. 7 is a schematic diagram showing a wafer test using a probe set of a preferred embodiment of the present invention. " Comparison of drawing numbers: This paper size is applicable to China National Standard (CNS) A4 specifications (21〇χ297 公 ^ 506035 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (100) 102 First Metal layer 104 First oxide layer 106 First opening 108 Second metal layer 110 Bump 112 Third oxide layer 114 Conical structure 116 Second opening 118 Third opening 120 Third metal layer 121 Contact area 122 Probe 124 Probe Group 200 Wafer to be tested 202 Wafer 204 Bonding Pad 206 Passivation Layer Detailed description of the invention: The present invention discloses a probe set and a manufacturing method thereof, which are manufactured by using semiconductor technology. Semiconductor technology can produce a large number of probe sets with excellent precision and uniformity at a relatively low cost. In order to make the description of the present invention more detailed and complete, please refer to the following inserts and cooperate with Figures 1 to 7 In order to reduce the cost of purchasing test equipment for integrated circuit wafers, the present invention uses semiconductor process technology to manufacture test probes. Please refer to Figures! To Figure 6, which are flowcharts showing the manufacturing cross-section of a probe set according to a preferred embodiment of the present invention. First, the size is slightly larger than the wafer to be tested by 200 (see Figure 8). This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ........... Lu installation ......... Order --- 1 ..... ( Please read the notes on the back before filling in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 506035 A7 __ B7 V. Description of the invention () 7) Insulating base material 1 (only one of them is shown) A small portion) is covered with a first metal layer 102, wherein the material of the substrate 100 may be, for example, stone oxide, and the material of the first metal layer 102 may be, for example, aluminum (A1), copper (Cu), or aluminum copper Alloy, etc. Then, the first metal layer 104 is covered with a first oxide layer 104 by, for example, a thermal oxidation method (Chemical Vapor Deposition; CVD), or the like. Among them, The thickness of the first metal layer ι02 and the first oxide layer 〇04 can be changed according to process requirements. Then, for example, lithography and wet etching (Wet Etchi ng) or Dry Etching to define the first oxide layer 104 until a portion of the first metal layer 102 is exposed, and a plurality of first openings 106 are formed in the first oxide layer 104, such as The structure shown in Figure 1. After the first opening 106 is set, a second metal layer 108 is formed to cover the first oxide, the layer 104, the first opening 106, and the first oxide layer 104. In part, the thickness of the second metal layer 108 is quite thick, between about 3 micrometers and about 5 micrometers, and the material of the second metallographic layer 108 can be matched with the material of the first metal layer 102 to be aluminum. , Copper, or aluminum-copper alloy. Then, the second metal layer 008 is defined by, for example, lithography and etching processes, and a part of the second metal layer 108 is removed, and a part of the first oxide layer 104 is exposed, but the first opening 106 remains. part. Because the thickness of the second metal layer 108 is relatively thick, the polymer (poiyiner) polymer generated during the etching process will adhere to the side wall of the second metal layer 108, so that the first The two metal layers 108 have inclined sidewalls, as shown in FIG. 2. 9 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 public director) ........... · installation-order ... (Please read the note on the back first Please fill in this page again) 506035 A7 _______ B7 V. Description of the invention () ............-_ Pack: (Please read the precautions on the back before filling this page) Please refer to Figure 3 After completing the patterning of the second metal layer 丨 〇8, first form a second oxide layer (only the portion of the bump 110 is shown) to cover the second metal layer 108 and the first oxide layer! 〇4. The second oxide layer is defined by, for example, lithography and etching processes, to remove the second oxide layer on the first oxide layer 104 and a part of the second oxide layer on the second metal layer 108, and expose the first oxide layer An oxide layer 104 and a portion of the second metal layer 108 are formed on the second metal layer 108. Next, a high-density plasma chemical vapor deposition (High Density Plasma CVD; HDP-CVD) technique is used to deposit a third oxide layer 112, and on the second metal layer 108 and the first oxide layer 104, an The third oxide layer 112 is formed by combining the bumps 110. Among them, the shape of the third oxide layer 112 is controlled by adjusting the sputtering rate / deposition rate (S / D) ratio of the high-density plasma chemical vapor deposition step. A cone-shaped structure 1 1 4 is formed on the region of the bump 11, as shown in FIG. 4. After the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed the cone-shaped structure 1 1 4, the third oxide layer 112 ′ on the second metal layer 108 is defined by the lithography and etching processes, and the second metal layer 108 is formed. A plurality of second openings 1 1 6 are formed, and a portion of the second metal layer 108 is exposed. While defining the third oxide layer 112 on the second metal layer 108, the first gold layer at a predetermined distance from the second metal layer 108 is also defined.

This paper size applies to China National Standard (CNS) A4 (210X297 public love) I 506035

V. Description of the Invention (The third oxide layer on the printed layer 102 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the definition of the first oxide layer 104 with the first oxide layer 104, and a plurality of layers are formed on the first metal layer. The third opening 118 exposes a portion of the first flexion,... Of the first layer 102, and forms a structure as shown in FIG. 5. Then, a third metal layer 12 is formed.

Item Ba '120 covers the third oxide layer 112 and the second metal metal layer exposed by the first opening 116! 〇8, and the first metal layer 102 of the third opening 118, the second opening 1 16 and the third opening 118. Among them, the material of the third metal drawer layer 20 may be, for example, tungsten and nitride, such as harder metals or metal compounds, to facilitate testing and strengthen the cone. The third metal is reduced by two: rate ^ a The layer 120 is defined, and a part of the third metal layer 120 is removed, and a part of the second oxide layer 112 is exposed. However, the third metal layer 120, which is located in the cone shape, the mouth structure 114, the second opening body 116, and the third opening 1 18, is retained, and the Zhan (Za) is formed as shown in FIG. 6 The structure shown in the figure. Among them, the cone structure m and the third metal layer 120 located thereon constitute the probe 122 of the probe set 124 of the present invention, and the third area θ 8 = metal layer 120 forms the contact area 12 The manufacturing process has been completed so far; the probe set 124 of the present invention is not limited. 1 The number of probes 122 of the probe set 124 of the present invention is not limited. It can be changed according to process requirements, but at least one Du 122 The thickness of each material layer constituting the probe set 124 is in accordance with this paper rule (CNS) A4 specification (21〇χ9 ^ .........-, · install --- :: ! Order ......... Φ (Please read the notes on the back before filling and writing this page) 506035 A7

V. Description of the invention () (Please read the precautions on the back before filling this page) The size of the metal layer 1 0 8 can be changed according to the structure of the wafer 200 to be tested, only when testing the wafer 202, The probes 122 of the probe set 124 can smoothly contact the pads 204 of the wafer 202. When the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints and uses the probe set 124 of the present invention to test a 200-wafer wafer, the contact area 121 of the probe set 124 and an external test system (not, ' (Shown) The electrical connection 0 is because the protective layer 206 on the solder pad 204 of the chip 202 has been removed. Therefore, at this time, the probe 122 of the probe set 124 can be directly contacted with the pad 204 of the wafer 202. Among them, since the probe set 1 24 of the present invention can have more than one probe i 22, it can be ensured that the probe j 22 can contact the pad 204 of the wafer 202. After the probe 122 of the probe set 124 contacts the solder pad 204 of the wafer 202, the external test system sends out the electrical signals required by the wafer 202 on the wafer 200 to be tested, and the probe is electrically connected to the external test system The contact area 1 2 1 on the pin group 1 2 4, the first metal layer 102, the second metal layer 108, and the probe 122 transmit electrical signals to the bonding pads 204 of the chip 202. When the chip 202 receives the electrical signal from the external test system, the chip 202 will generate a response electrical signal, and again pass the probe 1 22 on the probe set 1 24 to transmit the response electrical signal to the outside. Test the system. The external test system judges the electrical test result of the chip 202 according to the electrical signal in response. In addition, since the probe set 124 of the present invention can be fabricated on a substrate 100 whose size is slightly larger than the wafer 200 to be measured. Therefore, when making the probe set 124, 12 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm)

^ 06035 A7 V. Description of the invention () The position of the probe 122 of the probe set 124 can be corresponding to the position of each pad 202 of each wafer 202 on the wafer to be tested 200. In this way, a wafer-level size test can be performed, and each of the probes 122 of each probe group 124 on the entire substrate 100 and each of the wafers 200 on the wafer 200 to be tested A pad 204 is in contact, and then tested according to the design of the test process. Therefore, the trouble of one-by-one alignment can be avoided, which is quite convenient and time-saving. The advantage of the present invention is to provide a self-produced probe set using a semiconductor manufacturing process, thereby saving the expensive cost of purchasing test probes. Because the semiconductor process required to manufacture the probe set of the present invention costs much less than the cost of purchasing a probe, ν, the test cost of the integrated circuit can be greatly reduced. Another advantage of the present invention is to provide a method for manufacturing a probe set, which can use a semiconductor process to form a plurality of probe sets on a substrate slightly larger than a wafer to be measured. With mature semiconductor process technology, the pattern size can be controlled at grade A, and the process parameters can be adjusted and controlled according to demand ', so that a probe set with high precision and uniformity can be manufactured. In addition, since the present invention is a wafer-level manufacturing, a large number of probe sets can be manufactured on one substrate at the same time. Therefore, manufacturing costs can be significantly reduced. By the method for manufacturing a probe set of the present invention, a wafer-level probe set can be obtained. Because of the wafer-level probe set of the present invention, 13 paper sizes can be designed to comply with the Chinese National Standard (CNS) A4 specification (210X297 mm) .....: __ 装 _--- ----- Order ......... Φ (Please read the precautions on the back of 1 ^ before filling out this page) Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs V. Description of Invention () The position of the probe corresponds to 0 ^. Of the wafer to be tested. 〈Each of the recording pads of the mother-wafer. When performing wafer testing, only 1-person alignment is required, so that 禊 4 can be aligned to all the wafers on the wafer under test, and it is not necessary to align them one by one. As a result, not only can the tediousness of wafer testing be reduced — π I can significantly reduce the time required for wafer testing. As understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and "to limit the patent scope of the present invention; all others can be completed without departing from the spirit disclosed by the present invention. Equivalent changes or modifications should be included in the scope of patent application below. I ---- 41 ^ 装-, (Please read the precautions on the back before filling this page) Order the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed M This paper is sized for China National Standard (CNS) A4 (210X297 mm)

Claims (1)

A8 B8 C8 506035 VI. Application for patent scope 1. A probe set (Probe Set) is suitable for detection [where the probe set is electrically connected to an external test system, and the probe set includes at least: a substrate A first metal layer is located on the substrate; a first oxide layer is located on the first metal layer, and the first metal layer includes at least a plurality of first openings and a plurality of third openings, and a portion is exposed The first metal layer; a second metal layer covering a portion of the first oxide layer, the first openings, and the portion of the first metal layer exposed by the first openings; a third oxide layer Covering the second metal layer, and the third oxide layer includes at least a plurality of second openings and a plurality of cone-shaped structures, wherein the second openings expose a part of the second metal layer; and a third metal layer covers Part of the third oxide layer, the second openings, the third openings, and the cone structures, wherein each of the cone structures and the third oxide covering each of the cone structures Explore the layer composition . 2. The probe set according to item 1 of the scope of patent application, wherein the substrate is an insulating material. This paper size is applicable to China National Standard (CNS) A4 specification (210x297 mm) ............ ^^ Attack ..., OK ... .I (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by 506035 ABCD VI. Patent Application Scope 3 · The probe set described in item 1 of the patent application scope, where The material of the substrate is silicon oxide. (Please read the precautions on the back before filling this page) 4. The probe set as described in item 1 of the scope of patent application, wherein the material of the first metal layer is aluminum (A1). 5. The probe set according to item 1 of the scope of patent application, wherein the material of the first metal layer is copper (Cu). 6. The probe set according to item 1 of the scope of patent application, wherein the material of the first metal layer is an aluminum-copper alloy. 7. The probe set according to item 1 of the scope of patent application, wherein the material of the second metal layer is aluminum. 8. The probe set according to item 1 of the scope of patent application, wherein the material of the second metal layer is copper. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 9. The probe set described in item 1 of the scope of patent application, wherein the material of the second metal layer is an aluminum-copper alloy. 10. The probe set according to item 1 of the scope of patent application, wherein the thickness of the second metal layer is between about 3 microns and about 5 microns. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X 297 mm). For patent application park, please read the following 5 items before filling in this I 1 1 · As described in the first patent application scope of the probe set Wherein, at least one second oxide layer is located on the second metal layer. 12. The probe set according to claim 11 in the patent application scope, further comprising forming a plurality of bumps by using the second oxide layer, and the bumps are covered by the second oxide layer. 1 3 · The probe set according to item 1 of the scope of patent application, wherein the third oxide layer is formed by a high-density chemical vapor deposition method (HDP-CVD). 14 · As the item 1 of scope of patent application In the probe set, a material of the third metal layer is a hard metal. 15. The probe set according to item 1 of the scope of patent application, wherein the material of the third metal layer is tungsten (W). 16 The probe set according to item 1 of the scope of patent application, wherein the material of the third metal layer is titanium nitride (TiN). 1 7. The probe set according to item 1 of the scope of patent application, wherein the third metal layer located in the third openings constitutes a contact area, and the contact area is 17 The paper size applies to the Chinese National Standard (CNS ) A4 specification (210X297 mm) The patent application range is used for electrical remote control # 逯 Connect the external test system 18 · The manufacturer of a probe set provides a substrate, (Please read the precautions on the back before filling This page) method at least includes: and the material insulation of the substrate, wherein the substrate has been covered with a stacked one of the Chu people. The-metal layer and a first oxide layer; defining the- An oxide layer, and a portion of the first metal layer is exposed, thereby forming a plurality of first openings in the first oxide layer; forming a second metal layer covering a portion of the first oxide layer, the first metal layer The part and the first openings; forming a second oxide layer covering the second metal layer; defining the second oxide layer so as to form a plurality of bumps on the second metal layer; performing a high-density electrical Chemical vapor deposition step To form a second oxide layer covering the second metal layer, the bumps, and another portion of the first oxide layer, and form a cone-shaped structure on each of the bumps; define the third oxide Layer, and about a portion of the second metal layer is exposed to form a plurality of second openings in the third oxide layer; the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints and defines the first oxide layer, and approximately exposes Another portion of the first metal layer 'to form a plurality of third openings in the other portion of the first oxide layer and the third oxide layer; and forming a third metal layer covering a portion of the third oxide layer, The tapered structure on each of the bumps, the other part of the first metal layer, the part of the second metal layer, the second openings, and the third openings. 18 This paper size applies China National Standard (CNS) A4 specification (210X297 mm) 506035 A8 B8 C8 D8_ 6. Apply for a patent and fill in the second openings and the third openings. (Please read the precautions on the back before filling out this page) 1 9 · The manufacturing method of the probe set described in item 18 of the scope of patent application, where the material of the substrate is silicon oxide. 20. The method for manufacturing a probe set according to item 18 of the scope of patent application, wherein the material of the first metal layer is selected from the group consisting of aluminum, copper, and aluminum-copper alloy. 2 1 · The manufacturing method of the probe set according to item 18 of the scope of the patent application, wherein the material of the second metal layer is selected from the group consisting of aluminum, copper, and aluminum-copper alloy. 22. The method for manufacturing a probe set according to item 18 of the scope of patent application, wherein the thickness of the second metal layer is between about 3 microns and about 5 microns. 23. The method for manufacturing a probe set according to item 18 of the scope of patent application, wherein the third metal layer is a hard metal. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 24. The manufacturing method of the probe set as described in item 18 of the scope of patent application, wherein the material of the third metal layer is tungsten. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) ABCD-Patent application scope 2 5 · The manufacturing method of the probe set as described in item 18 of the patent application scope, where the third metal The material of the layer is titanium nitride. 26 · —A method for manufacturing a probe set, at least including: * providing—a substrate, and the material of the substrate is insulated, wherein the substrate has been covered with a first metal layer and a first oxide that are sequentially stacked Forming a plurality of first openings in the first oxide layer and exposing a portion of the first metal layer; forming a second metal layer covering portions of the first oxide layer and the first metal layer Part, and the first openings; performing a high-density plasma chemical vapor deposition step, so as to form a third oxide layer covering the second metal layer and another part of the first oxide layer, and Forming a plurality of cone-shaped structures on the layer; forming a plurality of second openings in the third oxide layer, and partially exposing a portion of the second metal layer; forming a plurality of third openings in the first oxide layer In the other part and the third oxide layer, about another part of the first metal layer is exposed; and the third oxide layer, the cone-shaped structures, and the first metal layer forming part of the second metal layer covering part The other part Divide, the part of the second metal layer, the second openings, and the third openings, and fill the second openings and the third openings. 20 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page) • Order Φ Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economy 506035 A8 B8 C8 ____D8 27. The scope of patent application 27. The method for manufacturing a probe set as described in item 26 of the scope of patent application, wherein the material of the first metal layer is selected from the group consisting of aluminum, copper, and aluminum-copper alloy. 28. The method for manufacturing a probe set according to item 26 of the scope of the patent application, wherein the material of the second metal layer is selected from the group consisting of aluminum, copper, and aluminum-copper alloy. The method of making rice by the French side is 5 sets of needles to the depth of 3 meters. The items in the range of 6 degrees and 2 degrees are thick. The benefit is a special fund. Please read the precautions on the back before filling this page.) I would like to ask Shen Rufang Fang Yi to cause the formation of the package and the needles to be explored less. The first step of step 6 2 is to enclose the Dad oxygen. In the forming process, the second definition of oxygen includes the C block, which is convex. The upper layers are in the shape of gold. The second layer is in the gold cover. The second layer is in the cover. The second layer is in the oxygen layer. Printed by the staff of the Property Bureau, the consumer cooperative, and made some cover sets, including the probe package C. The above to the more prominent items of the block are a little bit more. Step 3 of the enclosing form on the first floor. The structure of the main month is tapered, and the block specifically applies for a group of needles made by the French party. The hardest and hardest item of the investigation is 6 IT 2 The range of materials 21 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 506035 ABCD 6. The scope of patent application 33 · If applying for a patent The method for manufacturing a probe set according to item 26, wherein a material of the third metal layer is tungsten. 34. The method for manufacturing a probe set according to item 26 of the scope of the patent application, wherein the material of the third metal layer is titanium nitride. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 22 The paper size applies to China National Standard (CNS) A4 (210X297 mm)