TW502418B - Light emitting diodes matrix with perforated metal sheets - Google Patents
Light emitting diodes matrix with perforated metal sheets Download PDFInfo
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- TW502418B TW502418B TW090124461A TW90124461A TW502418B TW 502418 B TW502418 B TW 502418B TW 090124461 A TW090124461 A TW 090124461A TW 90124461 A TW90124461 A TW 90124461A TW 502418 B TW502418 B TW 502418B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
Description
观418View 418
本技藝適用於照明或是裝飾燈板。 2 ·背景說明 圖1 · 習知技藝 顯不電路板絕緣基材13上面具有第一電路n以及第二電路 1 2,分別耦合於發光二極體晶片丨〇的底面電極以及表面電 極曰曰片1 〇的表面電極以打線1 4方式電性耦合至第二電路 12。這種產品的缺點是散熱效果差,所以只能使用低功率 之發光二極體,如此所產生的光線強度無法有效提高,所 以作為照明或是裝飾燈源的效果不佳。 圖2·圖1依據AA切割線之截面圖 說明同前所述。 本技藝使用兩組金屬基材’取代習知技藝使用之電路板基 材’提高散熱效果’同時在金屬基材上製作通孔,以便空 氣流通,而更加提高散熱效果。所以本產品可以提供光線 強度比習知技藝要強的光源燈板。 3 ·本技藝之摘要說明This technique is suitable for lighting or decorative lamp panels. 2 · Background Description Figure 1 · The conventional art shows that the circuit board insulating substrate 13 has a first circuit n and a second circuit 12 on it, which are respectively coupled to the bottom electrode and the surface electrode of the light emitting diode wafer. The surface electrode of 10 is electrically coupled to the second circuit 12 in a wire 14 manner. The disadvantage of this product is the poor heat dissipation effect, so only low-power light-emitting diodes can be used. The light intensity generated by this product cannot be effectively improved, so the effect as a lighting or decorative light source is not good. Figures 2 and 1 are based on cross-sectional views taken along the AA cutting line. In this technique, two sets of metal substrates are used instead of the circuit board substrates used in the conventional technique to improve the heat dissipation effect. At the same time, through holes are formed in the metal substrate so that air can flow and the heat dissipation effect is further improved. Therefore, this product can provide a light source lamp board with a light intensity stronger than that of conventional techniques. 3 · Summary of this skill
第4頁 五、發明說明(2) ' ' --—- $技*之目的之一疋開發一種以發光二極體矩光 件之照明光源。 ΐ f i之目的之一是開發一種以不同色光之發光二極體矩 陣組成之彩色光板作為裝飾光板。 =^,之目的之三是開發一種組合不同色光之發光二極體 旱光板」’提供裝飾用或是指示用變色光源。 4 ·本技藝之詳細說明 圖3 ·本技藝實施例一之金屬之一 、貝示金屬22具有具有通孔271以及通孔273。 圖4 ·本技藝實施例一之金屬之二 顯示金屬21承載發光二極體晶片2〇,且製作有通孔272。 圖5 ·圖3以及圖4的組合圖—本技藝實施例一 顯不圖3以及圖4疊合以後之組合產品示意圖,晶片2〇對應 於通孔273且藉著通孔273所形成之杯壁出射光線,杯壁提 供出射光線之聚集增強功能。 ^孔2 71與通孔2 7 2形狀相同且對位相通,提供空氣流通散 :之用,變化設計時,通孔271與通孔272的形狀不必相 同,大小也不必相同,位置也不必完全對準,也都可以 到通風散熱的效果。Page 4 5. Description of the invention (2) '' --- One of the purposes of $ TECH * is to develop an illumination light source using a light emitting diode momentary light element. One of the purposes of ΐ f i is to develop a colored light plate composed of light emitting diode arrays of different colors as decorative light plates. = ^, The third purpose is to develop a light-emitting diode that combines different colors of light. A dry light panel "'provides a color-changing light source for decoration or indication. 4 · Detailed description of the technique Figure 3 · One of the metals of the first embodiment of the technique, Bess metal 22 has a through hole 271 and a through hole 273. Fig. 4 · The second metal of the first embodiment of the present technology shows that the metal 21 carries the light-emitting diode wafer 20 and is formed with a through hole 272. Figure 5 · Combination of Figure 3 and Figure 4-The embodiment of this technology shows the schematic diagram of the combined product after Figure 3 and Figure 4 are stacked. The wafer 20 corresponds to the through hole 273 and the cup formed by the through hole 273 The wall emits light, and the wall of the cup provides the function of gathering and enhancing the light. ^ The hole 2 71 and the through hole 2 7 2 are the same shape and communicate with each other to provide air circulation. For the purpose of changing the design, the shape of the through hole 271 and the through hole 272 need not be the same, the size need not be the same, and the position need not be completely Alignment can also achieve the effect of ventilation and heat dissipation.
第5頁 502418 五、發明說明(3) 圖6·圖5依據BB切割線之截面圖 顯示晶片20安置於金屬基材21上,金屬基材22的通孔273 對位於晶片2 0且形成杯壁,提供晶片2 0出射光線用。通孔 2 7 1 · 2 7 2提供空氣流通散熱用。晶片2 0以打線2 4耦合表面 電極至金屬基材2 4 ’晶片2 0的底面電極接觸耦合於金屬基 材21。 圖7 · 本技藝實施例二之金屬之一 顯示金屬21具有通孔272,提供空氣流通散熱用。晶片20 安置於金屬21上,絕緣材料2 3也安置在金屬21上。 圖8 · 本技藝實施例二 顯示金屬22安置於金屬21的上方,裸露出晶片20,晶片20 的表面電極以打線24耦合於金屬22。金屬22具有通孔 2 7 1 ’ &供空氣流通散熱用。 圖9 · 本技藝實施例三 顯示每一小單元可以使用多片晶片,提高亮度,圖中顯示 兩片晶片2 0 1 · 2 0 2 ·可以安排一起。分別以打線2 4耦合其表 面電極至金屬22 ’底面電極則以接觸式耦合至金屬21。電 性絕緣材料23提供金屬21以及金屬22之間的電性絕緣功 圖1 0 ·本技藝實施例四Page 5 502418 V. Description of the invention (3) Figures 6 and 5 show the cross section of the BB cutting line showing that the wafer 20 is placed on the metal substrate 21, and the through holes 273 of the metal substrate 22 are located on the wafer 20 and form a cup Wall for wafer 20 to emit light. Through holes 2 7 1 · 2 7 2 provide air circulation for heat dissipation. The wafer 20 is coupled to the metal substrate 21 by bonding the surface electrode to the metal substrate 2 4 'and the bottom electrode of the wafer 20 is contact-coupled to the metal substrate 21. Figure 7 · One of the metals of the second embodiment of the present technology shows that the metal 21 has a through hole 272 for air circulation and heat dissipation. The wafer 20 is placed on the metal 21, and the insulating material 23 is also placed on the metal 21. Fig. 8 · The second embodiment of the technique shows that the metal 22 is placed on the metal 21 and the wafer 20 is exposed. The surface electrode of the wafer 20 is coupled to the metal 22 by a wire 24. The metal 22 has a through hole 2 7 1 '& Figure 9 · The third embodiment of the technology shows that each small unit can use multiple wafers to increase the brightness. The figure shows two wafers 2 0 · 2 0 2 · Can be arranged together. The surface electrode is coupled to the metal 22 'with a wire 2 4 respectively, and the bottom electrode is coupled to the metal 21 in a contact manner. Electrical insulating material 23 provides electrical insulating work between metal 21 and metal 22 Figure 10
第6頁 五、發明說明(4) _ 顯示下層金屬22製作有突起的平台鱼 便於打線24 ;金屬平台與金屬21門右 似共平面, 其餘描述同前所述。 間有電性絕緣材料23。 圖11 · 本技藝實施例五 顯示晶片2 〇以雙底面電極分別垃金 22。 刀別接觸耦合至金屬21以及金屬 圖12·圖11依據CC切割線之截面圖 顯示晶片20以雙底面電極分別桩 22 ;金屬平台與金屬21之;合至金屬21以及金屬 同前所述。 間有電性絕緣材料23。其餘描述 圖1 3 · 本技藝實施例六 顯示金屬21以及金屬22以诉如技也r 从迎似共平面的型態存在,曰 以雙底面電極分別接觸耦合i + M 91 曰曰片20 θ ^ 971组加&獨σ至金屬21以及金屬22,金屬21 ϋ 氣流通散熱用。金屬22具有通孔 272,提供空氣流通散熱用。 圖1 4 · 本技藝實施例七 顯示金屬211· 212· 213· 214.以近似共平面的型態之串聯方 式設計,晶片20以雙底面電極分別接觸耦合至其跨接之兩 片金屬上’構成串並聯效果。Page 6 V. Description of the invention (4) _ Shows that the lower metal 22 is made with a raised platform fish to facilitate the wiring 24; the metal platform and the metal 21 door are coplanar to the right, and the rest of the description is the same as described above. There are electrically insulating materials 23. Figure 11 · The fifth embodiment of the technique shows that the wafer 20 is gold 22 with double bottom electrodes. Blades are coupled to metal 21 and metal. Figures 12 and 11 are cross-sectional views according to the CC cut line. The chip 20 has two bottom electrodes, 22 respectively; metal platform and metal 21; and metal 21 and metal are the same as described above. There are electrically insulating materials 23. The rest of the description Figure 1 · The sixth embodiment of this technology shows that metal 21 and metal 22 exist in the form of a coplanar, which is called a coplanar surface, and is contact-coupled i + M 91 with two bottom electrodes, respectively. 20 θ ^ Group 971 plus σ to metal 21 and metal 22, metal 21 ϋ For airflow and heat dissipation. The metal 22 has a through hole 272 for air circulation and heat dissipation. Figure 14 · Example 7 of this technology shows metal 211 · 212 · 213 · 214. Designed in tandem with an approximately coplanar pattern, the chip 20 is contact-coupled to the two pieces of metal bridged by the two bottom electrodes, respectively. Form a series and parallel effect.
第7頁 五、發明說明(5)Page 7 V. Description of Invention (5)
圖1 5 ·本技藝實施例八 ί :ΐΐ2Ι·:2·以Z:型存在’金屬21具有通孔271提供空 Γ:二22, 有通孔272提供空氣流通散熱 曰Κ9η沾.上層八有通孔273提供晶片20之光線出射 用,曰曰片20的表面電極接觸耦合至金屬21 22之上 曰 =底面電極接觸轉合至金屬21.22.之下層,構:串: 聯效果。 圖1 6 ·本技藝實施例九 顯不晶片2 0具有譬轰面雷士系性 7 、’又衣曲冤極日守,可以採用雙打線241· 242· 为別將雙表面電極電性耦合至今屬基材2ι·22·。 圖1 7 ·本技藝實施例十 =示承載曰^片20的金屬22,可以製作一個凹杯25容納晶片 〇,更提高晶片20之出射光線聚集之功能。 圖1 8 · 本技藝實施例十一 顯=當金屬21· 22·共同承載晶片2〇時,也可以製作一個凹 =谷納晶片20,也就是金屬21製作有半凹杯251,金屬22 衣半凹杯252,半凹杯251·252構成一個完整的凹杯, 更提南晶片2 0之出射光線聚集之功能。 岫述描述揭示了本發明之較佳實施例以及設計圖式,惟Figure 15 · Eighth embodiment of this technology ί: ΐΐ2Ι ·: 2 · Presence in Z: type metal 21 has through holes 271 to provide space Γ: two 22, there are through holes 272 to provide air circulation and heat dissipation. The through hole 273 is provided for the light emission of the chip 20. The surface electrode of the chip 20 is coupled to the metal 21 and the bottom electrode is turned to the metal 21.22. The lower layer is structured: string effect. Figure 16 · The ninth display chip 20 of the embodiment of this technology has a Nexus system of 7, for example, and "Yiyiqu" is an extremely observant. You can use double wires 241 · 242 · In order to electrically couple the double surface electrodes So far it belongs to the base material 2ι · 22 ·. Fig. 17 · The tenth embodiment of the present technology shows that the metal 22 carrying the wafer 20 can be made into a concave cup 25 to accommodate the wafer 0, and the function of condensing the outgoing light from the wafer 20 is further improved. Fig. 18 · The eleventh display of the embodiment of this technology = when metal 21 · 22 · is commonly used to carry the wafer 20, a concave can be made = Guna wafer 20, that is, metal 21 is made of a semi-concave cup 251, and metal 22 The semi-concave cup 252 and the semi-concave cup 251 · 252 constitute a complete concave cup, and the function of focusing the light emitted from the wafer 20 is also mentioned. The description describes the preferred embodiment of the present invention and the design drawings, but
第8頁 502418 五、發明說明(6) 較佳實施例以及設計圖式僅是舉例說明,並非用於限制本 發明技藝之權利範圍於此,凡是以均等之技藝手段實施本 發明技藝者、或是以下述之「申請專利範圍」所涵蓋之權 利範圍而貫施者’均不脫離本發明之精神而為申請人之扭 利範圍。Page 8 502418 V. Description of the invention (6) The preferred embodiments and design drawings are only examples, and are not intended to limit the scope of the right to the technology of the present invention. Anyone who implements the technology of the present invention by equal means, The implementation of the scope of rights covered by the following "application scope" does not depart from the spirit of the present invention but is a scope of profit for the applicant.
第9頁 502418 圖式簡單說明 4. 圖式的簡單說明 圖1.習知技藝 圖2. 圖1依據AA切割線之截面圖 圖3. 本技藝實施例一之金屬之一 圖4. 本技藝實施例一之金屬之二 圖5.圖3以及圖4的組合圖_本技藝實施例一 圖6. 圖5 依據BB切割線之截面圖 圖7. 本技藝實施例二之金屬之一 圖8. 本技藝實施例二 圖9 · 本技藝實施例三 圖1 0 · 本技藝實施例四 圖11 · 本技藝實施例五 圖12.圖11依據CC切割線之截面圖 圖1 3. 本技藝貫施例六 圖1 4 · 本技藝實施例七 圖1 5. 本技藝實施例八 圖1 6. 本技藝實施例九 圖1 7. 本技藝實施例十 圖1 8. 本技藝實施例十一 5. 元件編號表 晶片 1 0. 20. 20 1.202.203.Page 9 502418 Simple illustration of the diagram 4. Simple illustration of the diagram Figure 1. Known technique Figure 2. Figure 1 A sectional view according to the AA cutting line Figure 3. One of the metals of the first embodiment of the technique Figure 4. The technique Figure 2 of the second embodiment of the metal Figure 5. Combination of Figure 3 and Figure 4 _ Example 1 of this technique Figure 6. Figure 5 Sectional view according to the BB cutting line Figure 7. Example of the second metal of the technique Figure 8 Figure 9 of the second embodiment of the technology Figure 10 of the third embodiment of the technology Figure 10 of the fourth embodiment of the technology Figure 11 of the fifth embodiment of the technology Figure 12. Cross-sectional view of the cutting line according to CC Figure 1 3. This technology Example 6 Figure 1 4 · Example 7 of the technology Figure 1 5. Example 8 of the technology Figure 1 6. Example 9 of the technology Figure 1 7. Example 10 of the technology Figure 1 8. Example 11 of the technology . Component number table wafer 1 0. 20. 20 1.202.203.
第10頁 502418 圖式簡單說明 電路11. 12. 電路板基材1 3. 打線14.24.241· 242. 金屬基材21. 22. 211. 212. 213. 214. 電性絕緣材料2 3. 凹杯2 5 半凹杯25 1. 252. 通孔271· 272. 273.Page 10 502418 Schematic illustration of circuit 11. 12. Circuit board substrate 1 3. Wire 14.24.241 · 242. Metal substrate 21. 22. 211. 212. 213. 214. Electrical insulating material 2 3. Concave Cup 2 5 Half concave cup 25 1. 252. Through hole 271 · 272. 273.
第11頁Page 11
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TW090124461A TW502418B (en) | 2001-09-28 | 2001-09-28 | Light emitting diodes matrix with perforated metal sheets |
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TW090124461A TW502418B (en) | 2001-09-28 | 2001-09-28 | Light emitting diodes matrix with perforated metal sheets |
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- 2001-09-28 TW TW090124461A patent/TW502418B/en not_active IP Right Cessation
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