五、發明説明（i ) 本申請案係仰仗於2001年6月20曰所提出申請，案號 為第2001-35084號的韓國專利申請案之優先權該案之全 文以引用的方式併入本文中。 發明的領域 本發明係有關於在製造半導體元件期間用於加工室 中完成不同的製程，諸如㈣、沈積、離子注人以及類似 的製程，用於固持一晶圓的一種裝置。 fci的背景 半導體元件，諸如電晶體與積體電路一般係以不同的 製程而製造完成，包括沈積、氧化、照相微影術、蝕刻、 離子注入以及類似的製程再三地施於晶圓於其上構成一特 定的圖案。然而，當併人於半導體元件中的元件越來越有 積體化的趨勢，因此於製造期間有時在半導體元件中產生 意外的缺陷。 因此，為了防止意外的缺陷，選擇一種用於完成每一 不同之製程的設備係為非常重要的，因為半導體元件係再 三地藉由完成不同的製程製造而成。 參考第1圖，其中係圖示一種傳統式的裝置，其係用 於在一單一晶圓型式加工室中固持晶圓，完成其中之製 程’例如用於形成一半球狀晶粒（HSG)。 傳統的裝置100係用於固持配置在一加工室1〇中之一 b曰圓18，其係包括一夾盤12用於支撐晶圓以及一裝填器 14用於裝填晶圓18。所配置之夾盤12係可蕹由一夾盤伸縮 裝置20(其係安裝在加工室1〇的下方）上下移動。、在失盤& . IP»，一:二’二’....."".'' 502367 A7 ---—-------------B7______ 五、發明説明（2 ) 置石墨17。石墨17之功能係將熱量從一加熱器（未顯 不）傳送至晶圓18，並藉此提供完成用於形成半球狀晶粒 (HSG)之製程的溫度狀況。用於裝填位在石墨17上之晶圓 U的裝填器14具有一轴16，該軸係穿過夾盤伸縮裝置2〇而 與裝填器伸縮裝置22連接。裝填器伸縮裝置22係藉由一汽 缸24上下移動裝填器14之軸16而作動。當軸16係藉由裝填 器伸縮裝置22降低用以裝填位在石墨17上之晶圓18時，裝 填器14之上部分係插入構成在石墨中之一開口或溝槽 (未顯示）中，用以確保晶圓18之背面與石墨17中之一表面 接觸。 於操作中，藉由用於輸送晶圓18的一種裝置將晶圓18 輸送進入加工室10中。在晶圓18放置在裝填器14上之後（其 係處在升高的狀態），裝填器丨4之上部分係缓慢地下降並插 入石墨17之溝槽中以容許晶圓18放置在石墨17之表面上。 圓蓋26係緊密地覆蓋將加工室10閉合。接著，作動真空泵 (未顯示）致使加工室10係為真空的。當加工室1〇係構成一 特定程度的真空，用於形成半球狀晶粒（HSG)的加工氣體 係供應持續一段特定的時間。因此，具有特定厚度的沈積 層係僅能構成在晶圓18之正面上〇 然而，當在晶圓18係放置在石墨17之表面上的狀態下 完成用於形成半球狀晶粒（HSG)之沈積製程時，沈積層係 均勻地構成在並未放置晶圓18之石墨.的暴露表面上。因 此，當重複沈積製程時，沈積層或材料係在石墨之暴露秦 面上聚積至一特定的高度。於此狀態了，假若一新的晶圓 本紙張尺度適用中國國家標準（CNS〉Α4規格（210X297公釐） 裝------------------訂------------------線· (請先閲讀背面之注意事項再填寫本頁) 502367 A7 _____B7 五、發明説明（3 ) 係放置在石墨上為了完成沈積之製程，其係可被置於在聚 積的沈積材料上。因而，在沈積之製程期間，會發生之一 問題在於晶圓扭轉或是無法在晶圓上構成一均勻的沈積 層。 例如，如第2圖中之A所示，當晶圓18被安置在積聚沈 積之材料上，在晶圓18之背面的下方形成一楔形形狀的空 間，於沈積製程中沈積層係構成在晶圓18之背面以及正 面。然而，由於在晶圓18之背面的下方形成一楔形形狀的 空間因此所構成之沈積層並不均勻。 構成在晶圓18之背面上不均勻的沈積層在以下的製 程會造成不良的效果。例如，於單一晶圓型式加工室中具 有所構成之不均勻沈積層之晶圓的厚度，其係與於批次型 式加工室中具有所構成之均勻沈積層之晶圓的厚度不同， 於批次型式加工室中用於形成半球狀晶粒（HSG)的沈積製 程完成複數個所配置之晶圓以容許晶圓之正面與背面均勻 地暴露。因此，當於以下之製程期間用以構成電容器時， 一薄的氧化物層係構成在於單一晶圓型式加工室中所形成 之晶圓的表面上，應延長加工時間直至達到所需之厚度為 止，從而所供應之加工氣體量亦為增加的。 再者，由於在沈積的製程期間，於單一晶圓型式加工 至中的晶圓佈置根本上係與於批次型式加工室中之佈置不 同，半球狀晶粒（HSG)或是沈積層係僅形成在於單一晶圓 型式加工室中的晶圓之正面上，以及形成在於批次型式加 工至中的晶圓之正面與背面上β因此，於以下的、製程中， 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公楚^ -- (請先閲讀背面之注-意事項再填窝本頁) •訂— 502367 A7 ___ B7_ 五、發明説明（4 ) 所決定之用於單一晶圓型式加工室中所獲得之晶圓的加工 狀況係與用於批次型式加工室中所獲得之晶圓的加工狀沉 不同。 再者，當裝填器向下移動用以裝填在石墨上之晶圓 時，晶圓之背面係與石墨接觸因此其會刮傷而形成顆粒。 同時，由於所配置之易於洩漏裝填器伸縮裝置用以將 裝填器上下移動’因而會發生的問題在於發生汽漏故障期 間所需之修復時間。 發明之概要說明 因此，本發明之一目標在於提供一種改良之裝置，其 係用於一單一晶圓型式加工室中固持一晶圓，在該加工室 中係可均勻地在晶圓之背面以及正面上形成一沈積層。 本發明之另一目標在於提供一種改良之裝置，其係用 於一單一晶圓型式加工室中固持一晶圓，在該加工室中係 可使於晶圓上所形成之沈積厚度係與於批次型式加工室中 所獲得之晶圓的沈積厚度相同。 本發明所提供之該等以及其他的目標係藉由一種裝 置於一用於製造半導體元件之加工室中固持一晶圓，該裝 置包括一夾盤用以放置晶圓其係配置可上下移動，一石墨 係配置在夾盤上並且於其之一邊緣中至少構成有一孔，以 及一支撐裝置用於支樓晶圓至一特定的高度其之一端部係 插入於該孔中。石墨具有的傳導性係足以提供用於完成一 特定製程的溫度狀況。 於一較佳具體實施例中，該孔係於石墨之邊緣成等角 ....................：裝------------------訂------------------線· (請先閱讀背面之注意事項再壤窝本頁} 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐） 刈2367 五、發明説明（ 三角形地配置三孔。 於一較佳具體實施例中，該支撐裝置包括一圓柱形的 頭邛用於支撐aa圓其之圓形表面係與晶圓接觸，一環狀的 支撐部分係配置在該頭部的下方自頭部的圓周表面徑向地 突出，以及一配置在支撐部分下方的插入部分係插入於該 孔中。較佳地，該支撐裝置係以諸如石英、碳化矽以及具 有不會藉由諸如加工氣體、溫度、壓力以及類似的加工狀 況改變本質的陶瓷材料所構成。同時，支撐裝置係配置在 超越用於運送晶圓之裝置的移動路徑的範圍。 1式之簡要說明 本發明之前述與其他之目標、特性與優點係可由本發 明之較佳具體實施例之更加詳細之說明而變得顯而易見 的，在所伴隨的圖式中相同的元件標號係表示於整個不同 的視圖中代表相同之元件。該等圖式並不需以比例繪製， 所欲強調的是說明本發明之原理。 第1圖係為一種傳統裝置的概略橫截面視圖，該裝置 係用於一單一晶圓型式加工室中固持一晶圓。 第2圖係為一部份的橫截面視圖，用以說明第1圖中所 示之傳統裝置的一問題。 第3圖係為一種根據本發明之較佳具體實施例之裝置 的概略橫載面視圖，其係用於一加工室中固持一晶圓。 第4圖係為一部份的橫截面視圖，用於說明在用於形 成一半球狀晶粒（HSG)的沈積製程期間加工氣體的流動狀 況0 本紙張尺度適用中國國家標準（CNS) Α4規格（210X297公釐) (請先閲讀背面之毛意事臂再填寫本頁) ·、τ_ 8 502367 . A7 ^ _B7_____ 五、發明説明（6 ) 第5圖係為一透視圖，其係說明形成第3圖中所示之裝 - 置的支撐裝置之其中之一插銷。 第6圖係為第3圖中所不之裝置的石墨的俯視圖，其中 構成有用於接受支撐裝置的三孔。 数佳具體實施例的詳細說明 • 現將相關於伴隨的圖式於之後對本發明作更加詳盡 m 的說明，圖式中係顯示本發明之較佳的具體實施例。於整 個說明t相同的元件標號係代表相同的元件。 第3圖係為一種根據本發明之一較佳具體實施例的裝. 置200的概略視圖，其係用於一加工室_固持一晶圓。 本發明之配置於加工室30中的裝置2〇〇包括一夾盤32 係用以將晶圓36放置於其上並加以支撐。所配置之夾盤32 係可藉由安裝在加工室30下方的夾盤伸縮裝置34而上下移 動。 _ 同時，本發明之裝置2〇〇包括一石墨40係配置在夹盤 32上石墨具有之傳導性係足以提供用於完成一特定製程 的溫度狀況，其之功能在於將來自加熱器（未顯示）的熱量 傳送至晶圓36。於石墨4〇之—邊緣係、如第6圖中所示構成有 三孔42、42’、44。孔42、42,、44提供之空間係用於接受. 1支撐'支撑裝置38的三插銷（將於之後說明）。因此，所 構成之三孔42'42，、44不致干擾用於運送晶㈣之裝置杯 的移動。亦孔42、42，、44係構成在用於運送晶圓36 ' 之裝置46之移動路徑简範圍外。同時，孔42、42,、44係 較佳地以相等的角度或是等角三角形之形式構成在石墨40 本紙張尺賴财關家標準⑽)M規格(2敝297公^； .......................^…： (請先閲讀背面之注意事項再填窝本頁) -口 :線丨 9 502367 A7 B7 五、發明説明（7 ) 之邊緣中，用以確保支撐裝置38之插銷能夠穩定地支撐晶 圓36 〇 本發明之裝置200係進一步包括一支撐裝置38，在藉 由用於運送晶圓36之裝置46將晶圓運送至加工室30中之 後，用以將晶圓36支撐在石墨40上方一特定高度的位置。 支撐裝置38係構成三插銷用以將晶圓36放置其上。插銷係 插入構成在石墨40之邊緣的孔42、42’、44中。 於第5圖中，其係圖示構成支撐裝置38之其中之一的 插銷。該插銷具有一圓柱狀的頭部380係用於支撐晶圓36。 頭部380之頂端係為圓形的用以當晶圓36放置在支撐裝置 上時，防止晶圓36之背面不致被刮傷以及產生顆粒。為了 穩定地支撐晶圓36,插銷係包括一環狀的支撐部分382配置 在頭部380的下方。環狀的支撐部分382係自頭部380之圓周 表面徑向地突出。可交替地，所構成的插銷係不具有支撐 部分382。同時，插銷包括一插入部分384其係插入於石墨 40中孔42、42’、44之其中之一相對應的孔中。所構成的插 入部分384係具有與石墨40之該等孔42、42’、44相對應的 直徑與長度。 較佳地，該支撐裝置38係以具有不會藉由諸如加工氣 體、溫度、壓力以及類似的加工狀況改變本質的材料所構 成。例如，支撐裝置38係可自石英、碳化矽、陶瓷以及類 似材料中選定的一種材料所製成。支撐裝置38以上述之材 料製成的優點在於即使在沈積的製程期間係可供應加工氣 體並沈積其上時，在完成製程之後於保養與維修期間沈積 10 (請先閲讀背面之注意事f再填寫本頁) 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 502367 A7 B7 五、發明説明（8 ) 於支撐裝置上的物質係可輕易地去除。 於此將說明本發明之一具體實施例之裝置200的操作 方式，其係用於一加工室中固持一晶圓。 首先，夾盤32係藉由夾盤伸縮裝置34向上移動。接著 藉由用於運送晶圓36之裝置46將晶圓36運送進入加工室30 中。在晶圓36係放置在插入於石墨40之孔42、42’、44中的 支撐裝置38的插銷上之後，一圓蓋42係接近密閉地覆蓋在 加工室30上。接著，作動真空泵（未顯示）致使加工室成為 真空。當加工室30形成一特定程度之真空時，供應用於形 成半球狀晶粒（HSG)的加工氣體持續一段特定的時間。因 此，具有特定厚度的沈積層係構成在晶圓36之正面與背面 上。 第4圖係為一概略視圖用於圖示形成半球狀晶粒（HSG) 的沈積製程。參考第4圖，當加工氣體係從晶圓36之上方或 是一側加以供應時，其係開始沈積在晶圓3 6之正面上。此 時，加工氣體係同時供應並沈積在晶圓36之背面，因為介 於石墨40之表面與晶圓36之背面之間的空間具有一特定的 高度，其係藉由將支撐裝置38之插銷插入石墨之孔42、 42,、44中所構成。因此，加工氣體係可供應至晶圓36的背 面以及正面，從而具有特定厚度之沈積層係均勻地構成在 晶圓36之背面。 構成在晶圓36之背面之沈積層的厚度根據介於石墨 表面40與晶圓36之背面間的距離（亦即支撐裝置38的高度h) 係可有所不同。於一具體實施例中，當高度h係在5至11厘 11 (請先閲讀背面之注意事項再填寫本頁) 衣紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 五、發明説明（9 ) 米的範圍，較佳地係為8至1〇厘米時係可獲得一較佳的沈積 層0 由前述之說明係可顯而易見地察知的是於單一晶圓 型式加工室中，由於係在將晶圓維持在一特定高度的狀態 下完成沈積之製程，因此本發明之裝置係可在晶圓的背面 與正面上係可均勻地構成沈積層。 再者，本發明之裝置不需特別的裝置用於上下地移動 晶圓將其裝填在石墨上，從而降低了成本以及沈積與操作 特別裝置所需的時間。 同時，於以下的製程中本發明之裝置不需使於單一晶 圓型式加工室中所獲得之晶圓的加工狀況與於批次型式加 工至中所獲付之晶圓的加工狀況有所不同，因為其之沈積 厚度並未有差異存在。 於圖式與說明書中已揭露了本發明之一種典型的較 佳具體實施例，儘管使用了一些特定的專有名詞但其僅係 為一般的以及說明的用途並不欲加以限定，以下所提出之 申請專利範圍係作為本發明之範疇。 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 12 502367 A7 B7 發明説明（10 ) 元件標號對照 Hl···加工室 34…夾盤伸縮裝置 12…夾盤 36…晶圓 14…裝填器 38…支撐裝置 16…輛 40…石墨 17…石墨 42…圓蓋 18…晶圓 42,42，，44···孔 20…夾盤伸縮裝置 46…裝置 22…裝填器伸縮裝置 100…傳統的裝置 24…汽缸 200…裝置 26…圓蓋 380…圓柱狀的頭部 30…加工室 382…環狀的支撐部分 32…夾盤 3 84…插入部分 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） 13V. Description of the Invention (i) This application is based on the priority of Korean Patent Application No. 2001-35084, which was filed on June 20, 2001, and is incorporated herein by reference in its entirety. in. FIELD OF THE INVENTION The present invention relates to an apparatus for holding a wafer by performing various processes, such as thorium, deposition, ion implantation, and the like, in a processing room during the manufacture of a semiconductor device. fci's background Semiconductor components, such as transistors and integrated circuits, are generally manufactured by different processes, including deposition, oxidation, photolithography, etching, ion implantation and similar processes repeatedly applied to the wafer Make up a specific pattern. However, when semiconductor devices are incorporated into devices, there is a tendency to be integrated, so unexpected defects sometimes occur in semiconductor devices during manufacturing. Therefore, in order to prevent accidental defects, it is very important to choose a device for each different process, because semiconductor devices are repeatedly manufactured by completing different processes. Referring to FIG. 1, there is shown a conventional device for holding a wafer in a single wafer type processing chamber to complete a process therein ', for example, for forming a hemispherical grain (HSG). The conventional apparatus 100 is used to hold one of the processing chambers 10, which is a circle 18, and includes a chuck 12 for supporting a wafer and a loader 14 for loading the wafer 18. The configured chuck 12 is movable up and down by a chuck telescopic device 20 (which is installed below the processing room 10). 2. Lost &. IP », one: two 'two' ..... " ". '' 502367 A7 ------------------ B7______ five, Description of the invention (2) graphite 17. The function of the graphite 17 is to transfer heat from a heater (not shown) to the wafer 18 and thereby provide the temperature conditions for completing the process for forming hemispherical grains (HSG). The loader 14 for loading the wafer U on the graphite 17 has a shaft 16 which is passed through the chuck telescopic device 20 and connected to the loader telescopic device 22. The loader telescopic device 22 is operated by a cylinder 24 moving the shaft 16 of the loader 14 up and down. When the shaft 16 is lowered by the loader telescopic device 22 to load the wafer 18 positioned on the graphite 17, the upper portion of the loader 14 is inserted into an opening or groove (not shown) formed in the graphite. It is used to ensure that the back surface of the wafer 18 is in contact with one surface of the graphite 17. In operation, the wafer 18 is transferred into the processing chamber 10 by a device for transferring the wafer 18. After the wafer 18 is placed on the loader 14 (it is in a raised state), the upper part of the loader 4 is slowly lowered and inserted into the groove of the graphite 17 to allow the wafer 18 to be placed on the graphite 17 On the surface. The dome 26 tightly covers and closes the processing chamber 10. Next, a vacuum pump (not shown) is operated to make the processing chamber 10 vacuum. When the processing chamber 10 is formed with a certain degree of vacuum, the processing gas for forming hemispherical grains (HSG) is supplied for a certain period of time. Therefore, a deposition layer having a specific thickness can only be formed on the front surface of the wafer 18. However, when the wafer 18 is placed on the surface of the graphite 17, the formation of hemispherical grains (HSG) is completed. During the deposition process, the deposited layer is uniformly formed on the exposed surface of the graphite on which the wafer 18 is not placed. Therefore, when the deposition process is repeated, the deposited layer or material accumulates to a specific height on the exposed surface of the graphite. In this state, if a new wafer paper size applies to Chinese national standards (CNS> Α4 specifications (210X297 mm)) ---------------- Line · (Please read the precautions on the back before filling this page) 502367 A7 _____B7 V. Description of the invention (3) It is placed on graphite in order to complete the deposition. In the manufacturing process, it can be placed on the accumulated deposition material. Therefore, one of the problems that occurs during the deposition process is that the wafer is twisted or a uniform deposition layer cannot be formed on the wafer. For example, as described in As shown by A in FIG. 2, when the wafer 18 is placed on the accumulated deposited material, a wedge-shaped space is formed below the back surface of the wafer 18. The deposition layer is formed on the back surface of the wafer 18 during the deposition process. And the front side. However, because a wedge-shaped space is formed below the back surface of the wafer 18, the deposition layer formed is not uniform. The uneven deposition layer formed on the back surface of the wafer 18 may cause defects in the following processes Effect. For example, it has a non-uniform sink in a single wafer type processing room. The thickness of the wafer is different from the thickness of the wafer with a uniform deposition layer formed in the batch type processing room. It is used to form hemispherical grains (HSG) in the batch type processing room. The process completes a number of configured wafers to allow the front and back sides of the wafer to be exposed uniformly. Therefore, when used to form capacitors during the following process, a thin oxide layer is formed in a single wafer type processing room On the surface of the formed wafer, the processing time should be extended until the required thickness is reached, so that the amount of processing gas supplied is also increased. Moreover, during the deposition process, a single wafer type is processed to The wafer layout in is fundamentally different from that in a batch-type processing room. Hemispherical grains (HSG) or deposited layers are formed only on the front side of the wafer in a single-wafer type processing room, and Formed on the front and back of the wafer processed in batches β. Therefore, in the following processes, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 Gongchu ^-(Please read the note on the back-notice before filling in this page) • Order — 502367 A7 ___ B7_ V. The description of the invention (4) used in a single wafer type processing room The processing conditions of wafers are different from those used for wafers obtained in batch-type processing chambers. Furthermore, when the loader is moved down to load a wafer on graphite, the back side of the wafer is Because it comes into contact with graphite, it will be scratched to form particles. At the same time, because the easy-to-leak loader telescopic device is configured to move the loader up and down ', the problem that will occur is the repair time required during the occurrence of a steam leak. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an improved device for holding a wafer in a single wafer type processing chamber in which the wafer can be uniformly positioned on the backside of the wafer and A deposition layer is formed on the front surface. Another object of the present invention is to provide an improved device for holding a wafer in a single wafer type processing chamber, in which the deposition thickness formed on the wafer is related to The wafers obtained in the batch type processing chamber have the same deposition thickness. These and other objects provided by the present invention are to hold a wafer in a processing chamber for manufacturing semiconductor components by a device, the device includes a chuck for placing the wafer, and the configuration can be moved up and down, A graphite system is arranged on the chuck and at least one hole is formed in one edge thereof, and a supporting device is used for supporting the wafer to a specific height, and one end thereof is inserted into the hole. Graphite has sufficient conductivity to provide the temperature conditions required to complete a particular process. In a preferred embodiment, the holes are equiangular at the edges of the graphite ........: installed --------- --------- Order ------------------ line · (Please read the precautions on the back first and then go to this page) This paper size is applicable to China Standard (CNS) A4 size (210X297 mm) 刈 2367 V. Description of the invention (triangular configuration with three holes. In a preferred embodiment, the support device includes a cylindrical head 邛 for supporting aa round A circular surface is in contact with the wafer, a ring-shaped support portion is disposed below the head portion to protrude radially from a circumferential surface of the head portion, and an insertion portion disposed below the support portion is inserted into the hole. Preferably, the supporting device is composed of, for example, quartz, silicon carbide, and a ceramic material that does not change its nature by processing conditions such as processing gas, temperature, pressure, and the like. At the same time, the supporting device is configured for transcendence The range of the movement path of the device for conveying wafers. Brief description of the formula 1 The foregoing and other objectives, characteristics, and advantages of the present invention can be obtained from this It becomes apparent that a more detailed description of the preferred embodiment of the invention is the same. In the accompanying drawings, the same component numbers are used to represent the same components in different views. The drawings are not necessarily to scale. The drawing is intended to emphasize the principle of the present invention. Figure 1 is a schematic cross-sectional view of a conventional device used to hold a wafer in a single wafer type processing room. Figure 2 is A partial cross-sectional view for explaining a problem with the conventional device shown in Fig. 1. Fig. 3 is a schematic cross-sectional view of a device according to a preferred embodiment of the present invention. Used to hold a wafer in a processing chamber. Figure 4 is a partial cross-sectional view illustrating the flow of processing gas during the deposition process used to form hemispherical grains (HSG). Paper size applies Chinese National Standard (CNS) Α4 specification (210X297 mm) (please read the insignia arm on the back before filling out this page) ·, τ_ 8 502367. A7 ^ _B7_____ 5. Description of the invention (6) Figure 5 A perspective It is a diagram illustrating one of the latches forming a supporting device of the device shown in Fig. 3. Fig. 6 is a plan view of graphite in which the device shown in Fig. 3 is not included. Three holes. Detailed description of the number of specific embodiments • The present invention will be described in more detail in the accompanying drawings. The drawings show the preferred embodiments of the present invention. Throughout the description t The same component numbers represent the same components. Figure 3 is a schematic view of a device 200 according to a preferred embodiment of the present invention, which is used in a processing room_holding a wafer. The present invention The apparatus 200 arranged in the processing chamber 30 includes a chuck 32 for placing and supporting the wafer 36 thereon. The arranged chuck 32 can be moved up and down by a chuck telescopic device 34 installed below the processing chamber 30. _ At the same time, the device 200 of the present invention includes a graphite 40 which is arranged on the chuck 32. The conductivity of the graphite is sufficient to provide a temperature condition for completing a specific process. Its function is to transfer the temperature from a heater (not shown). ) The heat is transferred to the wafer 36. Three holes 42, 42 ', 44 are formed in graphite 40-edge system as shown in FIG. The space provided by the holes 42, 42, 44 is for receiving the three pins of the support 1 support device 38 (to be described later). Therefore, the formed three holes 42'42, 44 do not interfere with the movement of the device cup used to transport the crystal puppet. The holes 42, 42, 44 are formed outside the range of the moving path of the device 46 for conveying the wafer 36 ′. At the same time, the holes 42, 42, 44 are preferably formed in the form of equal angles or equilateral triangles on the graphite 40 paper rule, which is based on the financial standard of the family ⑽) M specifications (2 敝 297 ^; ... .......... ^…: (Please read the precautions on the back before filling in this page) -Port: Line 丨 9 502367 A7 B7 V. Description of the invention (7) In the edge, the pins used to ensure that the support device 38 can stably support the wafer 36. The device 200 of the present invention further includes a support device 38, and the crystal is transferred by the device 46 for transporting the wafer 36. After being transported into the processing chamber 30, the wafer 36 is used to support the wafer 36 at a specific height above the graphite 40. The supporting device 38 constitutes three pins for placing the wafer 36 thereon. The pins are inserted into the graphite 40 Hole 42, 42 ', 44 in the edge. In Fig. 5, it shows a pin constituting one of the supporting devices 38. The pin has a cylindrical head 380 for supporting the wafer 36 The top of the head 380 is round to prevent the back side of the wafer 36 from being scratched and generated when the wafer 36 is placed on the supporting device. To stably support the wafer 36, the latch includes a ring-shaped support portion 382 disposed below the head portion 380. The ring-shaped support portion 382 projects radially from the circumferential surface of the head portion 380. It can be alternately The formed latch does not have a support portion 382. At the same time, the latch includes an insertion portion 384 that is inserted into one of the holes 42, 42 ', 44 in the graphite 40. The formed insertion portion 384 It has a diameter and a length corresponding to the holes 42, 42 ', 44 of the graphite 40. Preferably, the supporting device 38 is so as not to be changed by processing conditions such as processing gas, temperature, pressure, and the like Essential materials. For example, the support device 38 can be made from a selected material of quartz, silicon carbide, ceramics and similar materials. The support device 38 is made of the above materials. The advantage is that even during the deposition process When the process gas can be supplied and deposited on it, it will be deposited during maintenance and repair after the process is completed. 10 (Please read the notes on the back before filling this page) National Standard (CNS) A4 specification (210X297 mm) 502367 A7 B7 V. Description of the invention (8) The material on the supporting device can be easily removed. The operation of the device 200 according to a specific embodiment of the present invention will be explained here Method, which is used to hold a wafer in a processing room. First, the chuck 32 is moved upward by the chuck telescopic device 34. Then, the wafer 36 is transported into the processing by a device 46 for transporting the wafer 36 In the chamber 30. After the wafer 36 is placed on the pin of the support device 38 inserted in the holes 42, 42 ', 44 of the graphite 40, a dome 42 covers the processing chamber 30 in a close seal. Next, a vacuum pump (not shown) was operated to bring the processing chamber into a vacuum. When the processing chamber 30 forms a specific degree of vacuum, a processing gas for forming hemispherical grains (HSG) is supplied for a specific period of time. Therefore, a deposition layer having a specific thickness is formed on the front and back surfaces of the wafer 36. Figure 4 is a schematic view illustrating the deposition process for forming hemispherical grains (HSG). Referring to Fig. 4, when the process gas system is supplied from above or from one side of the wafer 36, it is deposited on the front side of the wafer 36. At this time, the processing gas system is simultaneously supplied and deposited on the back surface of the wafer 36 because the space between the surface of the graphite 40 and the back surface of the wafer 36 has a specific height, which is achieved by inserting the latch of the support device 38 It is formed by inserting graphite holes 42, 42, 44. Therefore, the processing gas system can be supplied to the back surface and the front surface of the wafer 36, so that a deposition layer having a specific thickness is uniformly formed on the back surface of the wafer 36. The thickness of the deposited layer formed on the back surface of the wafer 36 may vary according to the distance between the graphite surface 40 and the back surface of the wafer 36 (that is, the height h of the support device 38). In a specific embodiment, when the height h is between 5 and 11% 11 (please read the precautions on the back before filling this page). The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm). 5. Invention Note that a range of (9) meters, preferably 8 to 10 centimeters, can obtain a better deposited layer. 0 It is obvious from the foregoing description that in a single wafer type processing room, because The deposition process is completed while maintaining the wafer at a certain height. Therefore, the device of the present invention can uniformly form a deposition layer on the back and front sides of the wafer. Furthermore, the apparatus of the present invention does not require special equipment for moving the wafer up and down to load it on graphite, thereby reducing the cost and the time required for deposition and operation of the special equipment. At the same time, in the following processes, the device of the present invention does not need to make the processing conditions of the wafers obtained in a single wafer type processing room different from the processing conditions of the wafers paid in batch type processing. , Because there is no difference in its thickness. A typical preferred embodiment of the present invention has been disclosed in the drawings and the description. Although some specific proper names are used, it is only general and the purpose of the description is not intended to be limited. The scope of patent application is the scope of the present invention. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) 12 502367 A7 B7 Description of the invention (10) Component number comparison H1 ··· Processing room 34 ... chuck telescopic device 12 ... chuck 36 ... wafer 14 ... loader 38 ... supporting device 16 ... car 40 ... graphite 17 ... graphite 42 ... circle cover 18 ... wafer 42,42,44 ... hole 20 ... chuck telescopic device 46 ... device 22 ... loader telescopic device 100 ... conventional device 24 ... cylinder 200 ... device 26 ... round cover 380 ... cylindrical head 30 ... processing room 382 ... annular support portion 32 ... chuck 3 84 ... insertion portion (please read the precautions on the back first (Fill in this page) The paper size is applicable to Chinese National Standard (CNS) A4 (210X297mm) 13