CN113005429A - Nested formula graphite plate - Google Patents
Nested formula graphite plate Download PDFInfo
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- CN113005429A CN113005429A CN202110215454.0A CN202110215454A CN113005429A CN 113005429 A CN113005429 A CN 113005429A CN 202110215454 A CN202110215454 A CN 202110215454A CN 113005429 A CN113005429 A CN 113005429A
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- graphite
- graphite plate
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- pit
- disc
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a nested graphite disc, which comprises a lower layer graphite disc, wherein a pit is arranged on the surface of the lower layer graphite disc, and a plurality of positioning blocks are arranged on the inner wall surface of the pit; the upper layer graphite plate is nested in the concave pit, the side wall of the upper layer graphite plate is provided with a positioning groove matched with the positioning block, the upper surface of the upper layer graphite plate is provided with a groove for placing a substrate, the lower surface of the upper layer graphite plate is provided with a plurality of table tops with different heights, and an air layer with different gap distances is formed between the table tops and the lower layer graphite plate; the nested graphite plate can keep the temperature between the graphite plate and the substrate consistent, and realizes the uniform growth of semiconductor materials.
Description
Technical Field
The invention relates to the technical field of chemical vapor deposition equipment, in particular to a nested graphite disc.
Background
The existing metal organic chemical vapor deposition mode, especially the equipment designed by using the vertical airflow cavity structure of Veeco in America, is easy to generate the phenomenon of uneven material components when a semiconductor material sensitive to temperature grows, and the phenomenon can cause the problem that the final electrical property has larger difference although the semiconductor material grows in the same furnace when a GaAs space solar battery and other semiconductor devices are produced.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a nested graphite plate, which can keep the temperature between the graphite plate and a substrate consistent and realize the uniform growth of semiconductor materials.
A nested graphite disk according to an embodiment of the present invention comprises: the surface of the lower-layer graphite disc is provided with a pit, and the inner wall surface of the pit is provided with a plurality of positioning blocks; the upper graphite dish, the upper graphite dish nestification is in the pit, the lateral wall of upper graphite dish be equipped with locating piece matched with constant head tank, the upper surface of upper graphite dish is equipped with the recess that is used for placing the substrate, and the lower surface is equipped with the mesa of a plurality of co-altitude not, the mesa with form the different air bed of one deck clearance distance between the lower floor's graphite dish.
The nested graphite plate provided by the embodiment of the invention has at least the following technical effects: the air bed that the clearance distance is different can adjust the degree of being heated in the different regions of upper graphite dish to the realization is placed the substrate temperature of upper graphite dish and is kept unanimous, lets semiconductor material even growth.
In some embodiments of the present invention, an annular groove is formed in the concave pit, and an annular protrusion is correspondingly formed at the lower end of the upper-layer graphite disc.
In some embodiments of the invention, the height of the mesa is progressively higher.
In some embodiments of the invention, the mesa is stepped.
In some embodiments of the present invention, the number of the positioning blocks is three, and the positioning blocks are uniformly arranged on the inner wall surface of the recess around the axis of the recess.
In some embodiments of the present invention, the positioning block has a semi-cylindrical shape or a triangular prism shape.
In some embodiments of the present invention, a plurality of the pits are formed in the lower graphite plate, and the upper graphite plate is nested in each pit.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic structural view of a lower graphite plate according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an upper graphite plate according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of an upper graphite plate according to an embodiment of the present invention;
figure 4 is a partial cross-sectional view of the assembly of an upper graphite plate with a lower graphite plate in accordance with an embodiment of the present invention.
Reference numerals:
a lower graphite disc 100, a pit 110, a positioning block 120 and an annular groove 130;
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality of means is one or more, the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood as excluding the number, and larger, smaller, inner, etc. are understood as including the number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
A nested graphite disk according to an embodiment of the present invention comprises: the lower-layer graphite disc 100 is characterized in that a pit 110 is formed in the surface of the lower-layer graphite disc 100, and a plurality of positioning blocks 120 are arranged on the inner wall surface of the pit 110; upper graphite plate 200, upper graphite plate 200 nests in the pit 110, and the lateral wall of upper graphite plate 200 is equipped with the constant head tank 210 with locating piece 120 complex, and the upper surface of upper graphite plate 200 is equipped with the recess 220 that is used for placing the substrate, and the lower surface is equipped with the mesa 230 of a plurality of co-altitude not, forms the air bed that a deck clearance distance is different between mesa 230 and the lower floor graphite plate 100.
During the growth, a substrate for growth is placed in the groove 220 of the upper-layer graphite plate 200, the lower-layer graphite plate 100 is heated under the lower-layer graphite plate 100 in a heating wire or electromagnetic coil mode, and the temperature of the position, close to a heating source, of the lower-layer graphite plate 100 is high; the temperature is low at a place far from the heating source. In the place with high temperature, the distance between the table-board 230 of the upper layer graphite plate 200 and the lower layer graphite plate 100 is large, and the thickness of the formed air layer is thick, so that the heat transferred to the upper layer graphite plate 200 is small; at the place that the temperature is low, the distance between mesa 230 of upper graphite plate 200 and lower floor's graphite plate 100 is little, and the air bed of formation is thin, makes the heat of transmitting upper graphite plate 200 many to guarantee that upper graphite plate 200 is whole to be heated unanimously, realize that semiconductor material evenly grows. The height of the table-board 230 can be processed according to actual conditions, and finally the whole upper-layer graphite plate 200 is heated uniformly. The positioning block 120 is matched with the positioning groove 210, so that the change of the air layer gap caused by the disorder of the relative positions of the upper-layer graphite plate 200 and the lower-layer graphite plate 100 is prevented, the thickness of the air layer gap at a low temperature is increased, and the temperature at a high temperature is reduced, so that the upper-layer graphite plate 200 generates a great temperature difference.
In some embodiments of the present invention, an annular groove 130 is formed in the concave pit 110, and an annular protrusion 240 is correspondingly formed at the lower end of the upper graphite disc 200.
The annular protrusion 240 of the upper graphite disc 200 is matched with the annular groove 130 in the concave pit 110, so that the upper graphite disc 200 is nested in the concave pit 110, the table-board 230 is closer to but not contacted with the lower graphite disc 100, and the heat transfer efficiency is improved.
In some embodiments of the present invention, the height of the mesa 230 is gradually increased. Preferably, the mesas 230 are stepped.
The farther the lower the graphite plate 100 is from the heat source, the lower the temperature, and the temperature varies in inverse proportion to the distance; the height of the table-board 230 of the upper layer graphite plate 200 is gradually increased to correspond to the temperature change curve of the lower layer graphite plate 100; the lower the temperature of the lower graphite plate 100 is, the higher the height of the table-board 230 is, i.e. the table-board 230 is closer to the lower graphite plate 100, the temperature transfer is faster, and finally the whole upper graphite plate 200 is kept in a state of consistent temperature.
In some embodiments of the present invention, the number of the positioning blocks 120 is three, and the positioning blocks 120 are uniformly arranged on the inner wall surface of the recess 110 around the axis of the recess 110, and preferably, the positioning blocks 120 have a semi-cylindrical shape or a triangular prism shape.
The positioning blocks 120 are used for determining the relative positions of the upper-layer graphite disc 200 and the lower-layer graphite disc 100, that is, the changing height of the table top 230 and the temperature change curve of the lower-layer graphite disc 100 are always ensured to be unchanged correspondingly, the three positioning blocks 120 are uniformly arranged on the inner wall surface of the concave pit 110, so that the upper-layer graphite disc 200 can be stably and effectively fixed, and it can be understood that the number of the positioning blocks 120 can be four, five or the like; the semi-cylindrical or triangular prism-shaped positioning block 120 is adopted, and when the upper-layer graphite disc 200 is nested in the concave pit 110, the positioning and installation are convenient.
In some embodiments of the present invention, the lower graphite disc 100 is provided with a plurality of pits 110, and each pit 110 is nested with the upper graphite disc 200. Substrates can be placed in the upper graphite plates 200 at the same time, semiconductor materials can be grown, and production efficiency of products is improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (7)
1. A nested graphite tray, comprising:
the device comprises a lower-layer graphite disc (100), wherein a pit (110) is formed in the surface of the lower-layer graphite disc (100), and a plurality of positioning blocks (120) are arranged on the inner wall surface of the pit (110);
upper graphite plate (200), upper graphite plate (200) nestification is in pit (110), the lateral wall of upper graphite plate (200) be equipped with locating piece (120) matched with constant head tank (210), the upper surface of upper graphite plate (200) is equipped with recess (220) that are used for placing the substrate, and the lower surface is equipped with mesa (230) of a plurality of co-altitude not, mesa (230) with form the different air bed of one deck clearance distance between lower floor's graphite plate (100).
2. The nested graphite disc of claim 1, wherein an annular groove (130) is formed in the pit (110), and an annular protrusion (240) is correspondingly formed at the lower end of the upper graphite disc (200).
3. The nested graphite tray of claim 1, wherein the height of the lands (230) is progressively higher.
4. The nested graphite tray of claim 3, wherein the lands (230) are stepped.
5. The nested graphite tray of claim 1, wherein the number of the positioning blocks (120) is three, and the positioning blocks (120) are uniformly arranged on the inner wall surface of the pit (110) around the axis of the pit (110).
6. The nested graphite plate of claim 1, wherein the locating block (120) is semi-cylindrical or triangular prism shaped.
7. The nested graphite disc of claim 1, wherein the lower graphite disc (100) is provided with a plurality of pits (110), and each pit (110) is nested with the upper graphite disc (200).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110215454.0A CN113005429A (en) | 2021-02-26 | 2021-02-26 | Nested formula graphite plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110215454.0A CN113005429A (en) | 2021-02-26 | 2021-02-26 | Nested formula graphite plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113005429A true CN113005429A (en) | 2021-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110215454.0A Pending CN113005429A (en) | 2021-02-26 | 2021-02-26 | Nested formula graphite plate |
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| CN (1) | CN113005429A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1452773A (en) * | 1972-11-24 | 1976-10-13 | Westinghouse Electric Corp | Silicon carbide-coated graphite members |
| US20020195058A1 (en) * | 2001-06-20 | 2002-12-26 | Choi Hong-Rok | Apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device |
| CN202465868U (en) * | 2012-02-22 | 2012-10-03 | 光达光电设备科技（嘉兴）有限公司 | Graphite disk and reaction chamber with same |
| CN203794982U (en) * | 2014-01-07 | 2014-08-27 | 江苏新广联科技股份有限公司 | Graphite disc capable of improving uniformity of inner ring wavelength and shortening mean value of wavelength of each ring |
| CN107587118A (en) * | 2017-11-02 | 2018-01-16 | 江苏华功半导体有限公司 | A kind of graphite plate |
| CN108690973A (en) * | 2017-12-28 | 2018-10-23 | 苏州能讯高能半导体有限公司 | A kind of graphite plate |
-
2021
- 2021-02-26 CN CN202110215454.0A patent/CN113005429A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1452773A (en) * | 1972-11-24 | 1976-10-13 | Westinghouse Electric Corp | Silicon carbide-coated graphite members |
| US20020195058A1 (en) * | 2001-06-20 | 2002-12-26 | Choi Hong-Rok | Apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device |
| CN202465868U (en) * | 2012-02-22 | 2012-10-03 | 光达光电设备科技（嘉兴）有限公司 | Graphite disk and reaction chamber with same |
| CN203794982U (en) * | 2014-01-07 | 2014-08-27 | 江苏新广联科技股份有限公司 | Graphite disc capable of improving uniformity of inner ring wavelength and shortening mean value of wavelength of each ring |
| CN107587118A (en) * | 2017-11-02 | 2018-01-16 | 江苏华功半导体有限公司 | A kind of graphite plate |
| CN108690973A (en) * | 2017-12-28 | 2018-10-23 | 苏州能讯高能半导体有限公司 | A kind of graphite plate |
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Application publication date: 20210622 |