TW495645B - Positive-type photoresist composition - Google Patents

Positive-type photoresist composition Download PDF

Info

Publication number
TW495645B
TW495645B TW089122530A TW89122530A TW495645B TW 495645 B TW495645 B TW 495645B TW 089122530 A TW089122530 A TW 089122530A TW 89122530 A TW89122530 A TW 89122530A TW 495645 B TW495645 B TW 495645B
Authority
TW
Taiwan
Prior art keywords
group
substituent
ministry
cns
printed
Prior art date
Application number
TW089122530A
Other languages
Chinese (zh)
Inventor
Sjorp Tan
Toru Fujimori
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW495645B publication Critical patent/TW495645B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

Provided is photoresist compostion enabling to give a resist pattern having high resolution, no undercut, and perpendicular side walls. A positive-type photoresist composition comprises (a) a compolymer A containing at least one structural unit represented by formulae (I), (II) and (III) wherein R1 and R2, independently of each other, represent hydrogen atom or methyl group, R4 represents a alkyl, aralkyl, aryl or -Y-O-C(=O)-Z group (wherein Y represents an alkylene group having 1 to 20 carbon atoms, and Z represents an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms), R3 represents hydrogen atom or methyl group, and X represents a having saturated condensed polycyclic hydrocarbons or saturated bridged cyclic hydrocarbons.

Description

A7 B7 495645 j公告衣 五、發明說明(1 ) [技術領域] 本發明係有關一種半導體積體電路元件、積體電路製 造用遮罩、印刷線路板、製造液晶板等所使用的正型光 阻劑組成物。 [先前技術] 正型光阻劑組成物係有美國專利第4,491,628號說明 書、歐洲專利第29,1 39號說明書等所記載的化學增幅型 光阻劑組成物。化學增幅型光阻劑組成物係藉由遠紫外 光等之放射線照射、在曝光部生成酸、藉由以該酸作爲 觸媒,以變化對活性放射線之照射部與非照射部之顯像 液而言的溶解度、在基板上形成圖樣之圖樣形成材料。 該例係例如有組合藉由光分解產生酸之化合物與縮醛 或0,N-縮醛化合物(日本特開昭48-89003號公報),組合 原酯或醯胺縮醛化合物(特開昭51 - 120714號公報),組 合在主鏈中具有縮醛或縮酮之聚合物(特開昭53 - 1 33429 號公報),組合乙醇醚化合物(特開昭55 - 1 2995號公報) ,組合N-醯基亞胺基碳酸化合物(特開昭55-126236號公 報),組合在主鏈中具有原酯基之聚合物(特開昭56-1 7 345號公報),組合3級烷酯化合物(特開昭60 - 3625號 公報),組合矽烷酯化合物(特開昭60 - 1 0247號公報), 組合政院酸化合物(特開昭6 0 - 3 7 5 4 9號公報、特開昭6 0 _ 121446號公報)等。此等由於原理量子收率大於1,故具 有高感光性。 同樣地,在室溫經時下雖具安定性,惟在酸存在下加 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐) (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---------線 經濟部智慧財產局員工消費合作社印製 A7A7 B7 495645 j Bulletin V. Description of the Invention (1) [Technical Field] The present invention relates to a semiconductor integrated circuit element, a mask for manufacturing integrated circuits, a printed wiring board, a liquid crystal panel, etc. Resist composition. [Prior Art] The positive type photoresist composition includes chemically amplified photoresist compositions described in U.S. Patent No. 4,491,628, European Patent No. 29,139, and the like. The chemically amplified photoresist composition is a developer that emits an acid in the exposed part by irradiation with radiation such as far-ultraviolet light, and uses the acid as a catalyst to change the imaging solution for the irradiated and non-irradiated parts of the active radiation. In terms of solubility, a pattern forming material that forms a pattern on a substrate. This example is, for example, a combination of a compound that generates an acid by photodecomposition and an acetal or 0, N-acetal compound (Japanese Patent Application Laid-Open No. 48-89003), and a combination of an original ester or an acetal compound (Japanese Patent Application No. 51-120714), a polymer having an acetal or a ketal in the main chain (Japanese Patent Application Laid-Open No. 53-1 33429), an ethanol ether compound (Japanese Patent Application Laid-open No. 55-1 12995), N-fluorenimine carbonic acid compound (Japanese Patent Application Laid-Open No. 55-126236), a polymer having an original ester group in the main chain (Japanese Patent Application Laid-Open No. 56-1 7 345), and a third-order alkyl ester Compounds (Japanese Patent Application Laid-Open No. 60-3625), Silane Ester Compounds (Japanese Patent Application Laid-Open No. 60-3 0247), and Acid Compounds (Japanese Patent Application Laid-Open No. 6-30-7 5 4 9) Sho 6 0 _ 121446) and so on. These have high photosensitivity due to the principle quantum yield greater than 1. Similarly, although it is stable at room temperature over time, the paper size added in the presence of acid is subject to the Chinese National Standard (CNS) A4 specification (210 X 297 meals) (Please read the precautions on the back before filling in this Page) Binding ---- Order --------- Printed A7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

五、發明說明(2 ) (請先閱讀背面之注意事項再填寫本頁) 熱分解且鹼可溶化型,例如在特開昭59 - 45439號、特 開昭60 - 3625號、特開昭62-229242號、特開昭63 - 27829 號、特開昭63 - 36240號、特開昭63 - 250642號公報、 Polym.Eng.Sce.,23 卷、12 頁(1983) ; ACS.Sym.242 卷、 11 頁(1984) ; Semieonductor World 1987 年、11 月公報 、91 頁;Macromolecules,21 卷、1475 頁(1988) ; SPIE, 920卷、42頁( 1 988 )等所記載的藉由曝光產生酸之化合 物、與3級或2級碳(例如第三丁基、2-環己烯)之酯或 碳酸酯化合物組合型。此等型具有高感度、且與萘醌二 疊氮/酚醛淸漆樹脂型相比,Deep-UV範圍之吸收小故可 得對上述光源短波長化極爲有效的型。 特開平2 - 1 9847號公報中揭示一種光阻劑組成物,其 特徵爲含有全部或部分聚(對-羥基苯乙烯)之苯酚系羥 基以四氫吡喃基保護的樹脂。 特開平4-21 9757號公報中同樣地揭示一種光阻劑組成 物,其特徵爲含有20〜70%聚(對-羥基苯乙烯)之苯酚性 羥基以縮醛基取代的樹脂。 經濟部智慧財產局員工消費合作社印製 另外,特開平5 - 249682號公報中同樣地揭示使用縮醛 保護的樹脂之光阻劑組成物。 而且,特開平8 - 1 23032號公報中揭示使用含以縮醛基 取代的基之三元共聚物的光阻劑組成物。 此外,特開平5 - 1 1 33667號公報、特開平6- 266 1 1 2號 公報、特開平6-289608號公報、特開平7-209868號公報 中揭示,由羥基苯乙烯與(甲基)丙烯酸酯共聚物所成的 -4- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 ^、發明說明(3 ) 光阻劑組成物。 裝--- (請先閱讀背面之注意事項再填寫本頁) 另外,特開平1 1 - 65 1 20號公報中揭示使用羥基苯乙烯 與第3-丁基(甲基)丙烯酸酯及具碳數7以上之脂環式架 構的(甲基)丙烯酸酯之共聚物的組成物。而且,特開平 1 0 - 87724號公報中揭示導入有氧鍵或酯基之縮醛基的樹 脂。 然而,此等之光阻劑組成物在阻體圖樣下部之分叉, 企求以錐度形狀改良圖樣之側壁角度。 [發明之揭示] 因此,本發明之目的係提供一種具有高解像力、可防 止阻體圖樣下部之分叉,且圖樣之側壁角度爲垂直之正 型光阻劑組成物。 經濟部智慧財產局員工消費合作社印製 本發明人有鑒於該現狀,再三深入硏究的結果,發現 使用至少含有3種特定構造單位之樹脂、與含有藉由活性 光線或放射線照射產生酸的化合物及溶劑之正型光阻劑 組成物,可得具有高解像力、且可防止阻體圖樣下部之 分叉、且可解決圖樣之側壁角度的錐度形狀問題,遂而 完成本發明。 換言之,本發明之正型光阻劑組成物爲下述構成。 (1)一種正型光阻劑組成物,其特徵爲含有(a)至少具有以 下述一般式(I)、(II)及(III)所示之構成單位的共聚合物 A,(b)藉由活性光線或放射線產生酸之化合物,以及(c)溶 劑。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) A7V. Description of the invention (2) (Please read the notes on the back before filling in this page) Thermal decomposition and alkali-soluble type, such as JP-A-Sho 59-45439, JP-A-Sho 60-3625, JP-A-Sho 62 -229242, JP 63-27829, JP 63-36240, JP 63-250642, Polym.Eng.Sce., 23 volumes, 12 pages (1983); ACS.Sym.242 Vol. 11, p. 11 (1984); Semieonductor World 1987, November Gazette, p. 91; Macromolecules, Vol. 21, p. 1475 (1988); SPIE, Vol. 920, p. 42 (1 988), etc. An acid compound, an ester or a carbonate compound in combination with a 3 or 2 carbon (for example, third butyl, 2-cyclohexene). This type has high sensitivity and has a smaller absorption in the deep-UV range than the naphthoquinonediazide / phenolic lacquer resin type, so that it is possible to obtain a type that is extremely effective in shortening the wavelength of the light source. Japanese Patent Application Laid-Open No. 2-1 9847 discloses a photoresist composition characterized by a resin containing all or part of poly (p-hydroxystyrene) phenolic hydroxyl group protected with a tetrahydropyranyl group. Japanese Patent Application Laid-Open No. 4-21 9757 also discloses a photoresist composition characterized by a resin containing 20 to 70% of poly (p-hydroxystyrene) phenolic hydroxyl group substituted with an acetal group. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Japanese Patent Application Laid-Open No. 5-249682 also discloses a photoresist composition using an acetal-protected resin. Furthermore, Japanese Patent Application Laid-Open No. 8-1 23032 discloses a photoresist composition using a terpolymer containing a group substituted with an acetal group. In addition, Japanese Unexamined Patent Publication No. 5-1 1 33667, Japanese Unexamined Patent Publication No. 6-266 1 12, Japanese Unexamined Patent Publication No. 6-289608, and Japanese Unexamined Patent Publication No. 7-209868 disclose that hydroxystyrene and (methyl) -4- Formed by acrylate copolymer This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 B7 ^ Description of the invention (3) Photoresist composition. Loading --- (Please read the precautions on the back before filling this page) In addition, JP-A No. 1 1-65 1 20 discloses the use of hydroxystyrene and 3-butyl (meth) acrylate and carbon Composition of (meth) acrylic acid ester copolymer of alicyclic structure with a number of 7 or more. Japanese Unexamined Patent Publication No. 10-87724 discloses a resin having an acetal group having an oxygen bond or an ester group. However, the bifurcation of these photoresist compositions in the lower part of the resist pattern is intended to improve the angle of the sidewall of the pattern in a tapered shape. [Disclosure of the invention] Therefore, an object of the present invention is to provide a positive photoresist composition having a high resolution, which can prevent the lower branch of the resist body pattern, and the sidewall angle of the pattern is vertical. In the light of the current situation, the inventor of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the inventor's research and found that the use of a resin containing at least three specific structural units and compounds containing acid generated by active light or radiation The positive photoresist composition of the solvent and the solvent can obtain a high resolution, can prevent the bifurcation of the lower portion of the resist body pattern, and can solve the problem of the taper shape of the sidewall angle of the pattern, thus completing the present invention. In other words, the positive-type photoresist composition of the present invention has the following constitution. (1) A positive photoresist composition comprising (a) a copolymer A having at least a constituent unit represented by the following general formulae (I), (II), and (III), (b) Compounds that generate acids by active light or radiation, and (c) solvents. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) A7

•ch2—9-• ch2—9-

OH (I)OH (I)

〆 CH •CHa O 一 R4 ^ch2-c^-〆 CH • CHa O a R4 ^ ch2-c ^-

X (III) 經濟部智慧財產局員工消費合作社印製 (其中,於式(I)〜(II)中, I及R2係各互相獨立地代表氫原子或甲基,r4係表示直 鏈狀、支鏈狀或環狀可具取代基之烷基、可具取代基之 芳烷基、可具取代基之芳基或式(IV)所示之基, 0II —Y一0一C一z(IV) (其中Y係表示可具取代基之碳數1-20伸烷基, Z係表示可具取代基之碳數1〜20烷基、支鏈狀或環狀院 基、可具取代基之碳數6〜20芳基或可具取代基之碳數 7〜-20芳烷基),於式(III)中, 1?3係表示氫原子或甲基,X係表示可具取代基之具飽 和縮合多環型烴或可具取代基之飽和橋連環烴之基) (2 )如上述(1 )所記載的正型光阻劑組成物’其中(a )共 聚物A中另含有下述一般式(V)所示之構造單位。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 裝—— (請先閱讀背面之注意事項再填寫本頁) · -丨線. 495645 A7 B7 五、發明說明(5 )X (III) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (wherein in formulas (I) to (II), I and R2 each independently represent a hydrogen atom or a methyl group, and r4 represents a linear, A branched or cyclic alkyl group which may have a substituent, an aralkyl group which may have a substituent, an aryl group which may have a substituent, or a group represented by formula (IV), 0II —Y—0—C—z ( IV) (where Y represents a carbon number of 1 to 20 alkyl groups which may have a substituent, Z represents a alkyl group of 1 to 20 carbon atoms which may have a substituent, a branched or cyclic courtyard group, and may have a substituent 6 to 20 aryl groups or 7 to -20 aralkyl groups which may have a substituent), in the formula (III), 1 to 3 represents a hydrogen atom or a methyl group, and X represents a substituent. A saturated condensed polycyclic hydrocarbon or a saturated bridged cyclic hydrocarbon group which may have a substituent) (2) The positive photoresist composition according to the above (1), wherein (a) copolymer A further contains The structural unit shown by the following general formula (V). This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) Packing-(Please read the precautions on the back before filling out this page) ·-line. 495645 A7 B7 V. Description of the invention (5)

經濟部智慧財產局員工消費合作社印製 (其中’ R1係與申S靑專利範圍弟1項所記載者相同,R 係表示氫原子、碳數1〜4之直鏈狀或支鏈狀烷基、甲氧 基或乙酸氧基) [發明之實施型態] 於下述中詳細說明本發明。 首先,說明有關至少具有上述一般式(I)〜(III)所示 構造單位的共聚物A (成分(a ))。 . 於本發明之正型光阻劑組成物中,所使用的共聚物A 係含有上述一般式(I )所示構造單位(以下稱爲構造單位 (I ))、與上述一般式(11 )所示構造單位(以下稱爲構造 單位(11 ))、以及上述一般式(〗〗〗)所示構造單位(以下 稱爲(III))作爲共聚合成分之共聚物。 於該共聚物A中’各構造單位之較佳的含量,構造單 位(I )係爲40〜90莫耳%、較佳者爲50〜85莫耳%、更加 者爲60〜85莫耳%,構造單位(II)之含量爲5〜40莫耳% 、較佳者爲7〜35莫耳%、更佳者爲1〇〜25莫耳%,構造單 位(III)之含量爲3〜30莫耳%、較佳者爲5〜20莫耳%、 更佳者爲5〜15莫耳%。而且,共聚物a之構造單位(V)之Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy , Methoxy or acetoxy) [Embodiments of the invention] The present invention will be described in detail below. First, the copolymer A (component (a)) having at least the structural units represented by the general formulae (I) to (III) will be described. In the positive-type photoresist composition of the present invention, the copolymer A contains a structural unit represented by the general formula (I) (hereinafter referred to as a structural unit (I)), and the general formula (11). The structural unit shown (hereinafter referred to as the structural unit (11)) and the structural unit shown below (hereinafter referred to as (III)) as a copolymer of the copolymerization component. The preferred content of each structural unit in the copolymer A, the structural unit (I) is 40 to 90 mol%, preferably 50 to 85 mol%, and more preferably 60 to 85 mol% The content of the structural unit (II) is 5 to 40 mol%, preferably 7 to 35 mol%, and more preferably 10 to 25 mol%, and the content of the structural unit (III) is 3 to 30. Molar%, preferably 5-20 Molar%, and more preferably 5-15 Molar%. Moreover, the structural unit (V) of the copolymer a

il裝--- (請先閱讀背面之注意事項再填寫本頁) -線· 495645 A7 B7 五、發明說明(6 ) 含量爲5〜20莫耳%、較佳者爲5〜15莫耳%、更佳者爲5 〜1 0莫耳%。 共聚物A之構造單位(V )的含有可有效地提高散集,幅 度。 一般式(I)之係爲氫原子或甲基’較佳者爲氫原子。 氧基可以在2 -位、3 -位、4 -位中任一取代位置、惟就 感度而言以4-位較佳。 一般式(II)中,R2係爲氫原子或甲基,較佳者爲氣原 子。縮醛可以在2 -位、3 -位、4 -位中任一取代位置、惟 就感度而言以4-位較佳。 R4表示之碳數2〜12之直鏈狀、支鏈狀或環狀烷基例 如有乙基、正丙基、異丙基、正丁基、第2-丁基、第3-丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷 基、十二烷基、環戊基、環己基、環庚基、環辛基等, 以乙基、正丙基、異丙基、正丁基、第2-丁基、第3-丁 基較佳。 此外,烷基之取代基爲環狀烷基以在該烷基末端取代 較佳,具體而言在乙基末端上鍵結環己基之2-環己基乙 基等較佳,其它的取代基例如有羥基、鹵素原子、胺基 、硝基、乙醯基等。其中以羥基、鹵素原子更佳。 R4所示之芳烷基以苯甲基、苯乙基、苯乙烯基、肉桂 基、二苯甲基、甲苯基等較佳。取代基係爲碳數1〜4之 烷基,具體而言以甲基、乙基、正丙基、異丙基、正丁 基、第2 -丁基、第3 -丁基較佳,以羥基、鹵素原子、胺 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ,裳--- (請先閱讀背面之注意事項再填寫本頁) · 線· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 495645 A7 ____B7__ 五、發明說明(7 ) 基、硝基、乙醯基、甲氧基等較佳。 所示之芳基係以苯基、萘基較佳。取代基係爲碳數 1〜之烷基,具體而言甲基、乙基、正丙基、異丙基、正 丁基、第2-丁基、第3-丁基較佳,以羥基、鹵素原子、 胺基、硝基、乙醯基、甲氧基等之烷基等較佳。 含R4或具式(IV)所示之酯基的取代基較佳。 於(IV)中Y係表示可具取代基之碳數1〜20之伸烷基, 較佳者爲碳數1〜10之伸烷基,具體而言例如亞甲基、 伸丙基、伸丁基、伸己基、伸庚基、伸辛基、伸壬基、伸 癸基等。其中,伸乙基、伸丙基、 伸丁基等較佳。 上述伸烷基亦可具取代基,該取代基例如有甲基、 乙基、丙基、丁基、苯基、甲苯基、環己基等。 一般式(IV)之Z所示碳數1〜20、較佳者爲7〜20、更 佳者爲9〜1 8之直鏈狀或支鏈狀烷基,例如甲基、乙基、 丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、 十一烷基、十二烷基、十三烷基、十四烷基、十五烷基 、十六垸基、十七院基、十八院基等,以及環己基甲基 、環己基乙基、環己基丙基、環戊基乙基、環戊基丙基 、原菠烷基甲基、金剛烷基甲基等。若在上述碳數之範 圍內,亦可使用上述以外的取代烷基。 上述Z所示之碳數3〜20、較佳的碳數7〜20、更佳的 碳數9〜18之環狀烷基,例如有環丙基、環丁基、環戊 基、ί哀己基、環庚基、環半基、環壬基、環十七院基、 -9- 本紙張尺度適用中關家標準(CNS)A4規格(210 X 297公髮) ---- (請先閱讀背面之注意事項再填寫本頁)il pack --- (Please read the precautions on the back before filling out this page)-line · 495645 A7 B7 V. Description of the invention (6) The content is 5 ~ 20 mol%, preferably 5 ~ 15 mol% The more preferred is 5 to 10 mole%. The inclusion of the structural unit (V) of the copolymer A can effectively increase the dispersion and the amplitude. The system of the general formula (I) is a hydrogen atom or a methyl group, preferably a hydrogen atom. The oxy group may be substituted at any of the 2-, 3-, and 4-positions, but the 4-position is preferred in terms of sensitivity. In general formula (II), R2 is a hydrogen atom or a methyl group, and a gas atom is preferred. The acetal may be substituted at any of the 2-, 3-, and 4-positions, but the 4-position is preferred in terms of sensitivity. Examples of the linear, branched or cyclic alkyl group having 2 to 12 carbon atoms represented by R4 include ethyl, n-propyl, isopropyl, n-butyl, 2-butyl, 3-butyl, Amyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, etc., with ethyl, n-propyl , Isopropyl, n-butyl, 2-butyl, and 3-butyl are preferred. In addition, it is preferable that the substituent of the alkyl group is a cyclic alkyl group to be substituted at the alkyl terminal. Specifically, 2-cyclohexylethyl is preferably bonded to a cyclohexyl group at the ethyl terminal. Other substituents such as There are a hydroxyl group, a halogen atom, an amine group, a nitro group, and an acetamyl group. Among them, a hydroxyl group and a halogen atom are more preferable. The aralkyl group represented by R4 is preferably benzyl, phenethyl, styryl, cinnamyl, benzyl, tolyl, or the like. The substituent is an alkyl group having 1 to 4 carbon atoms. Specifically, methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-butyl, and 3-butyl are preferred. Hydroxyl, halogen atom, and amine paper sizes are applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 mm), Sang --- (Please read the precautions on the back before filling this page) · Line · Ministry of Economy Intellectual Property Printed by the Bureau ’s Consumer Cooperatives Printed by the Ministry of Economic Affairs ’Intellectual Property Bureau ’s Consumer Cooperatives’ printed 495645 A7 ____B7__ 5. Description of the Invention (7) Base, nitro, acetamyl, and methoxy are preferred. The aryl group shown is preferably a phenyl group or a naphthyl group. The substituent is an alkyl group having 1 to carbon atoms. Specifically, methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-butyl, and 3-butyl are preferred. A halogen atom, an amine group, a nitro group, an alkyl group such as ethenyl group, and a methoxy group are preferred. Substituents containing R4 or an ester group represented by formula (IV) are preferred. In (IV), Y represents an alkylene group having 1 to 20 carbon atoms which may have a substituent, preferably an alkylene group having 1 to 10 carbon atoms, and specifically, for example, methylene, propylene, and alkylene Butyl, hexyl, heptyl, hexyl, hexyl, hexyl, etc. Among them, ethylene, propyl, and butyl are preferred. The above-mentioned alkylene group may have a substituent, and examples of the substituent include methyl, ethyl, propyl, butyl, phenyl, tolyl, and cyclohexyl. A linear or branched alkyl group having a carbon number of 1 to 20, preferably 7 to 20, and more preferably 9 to 18, represented by Z in general formula (IV), such as methyl, ethyl, and propyl Base, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl Base, 17-base, 18-base, etc., as well as cyclohexylmethyl, cyclohexylethyl, cyclohexylpropyl, cyclopentylethyl, cyclopentylpropyl, orthospinylmethyl, adamantane Methyl and so on. As long as the carbon number is within the range, a substituted alkyl group other than the above may be used. The cyclic alkyl group having 3 to 20 carbon atoms, preferably 7 to 20 carbon atoms, and more preferably 9 to 18 carbon atoms, as shown in the above Z, includes, for example, cyclopropyl, cyclobutyl, cyclopentyl, and hexadecyl. Hexyl, cycloheptyl, cyclohalfyl, cyclononyl, ring seventeen courtyard, -9- This paper size applies to the Zhongguanjia Standard (CNS) A4 specification (210 X 297 issued) ---- (please first (Read the notes on the back and fill out this page)

495645 A7 B7 五、發明說明(8 ) 環十八烷基、4-環己基環己基、4-正己基環己基、戊基 環己基、己基氧化環己基、戊基氧化環己基、1-甲基-1-環己基、2 -甲基-1 -環己基、原菠烷基、金剛烷基等。 若在上述碳數之範圍內時,亦可使用上述以外之取代環 狀院基。 上述Z所示碳數6〜20、較佳者爲11〜20、更佳者爲13 〜20之芳基例如有4-甲基苯基、4-乙基苯基、2,4-二甲 基苯基、2,4,6-三甲基苯基、4-第3-丁基苯基、4-環戊 基苯基、4-環己基苯基、4-環庚基苯基、4-環己基苯基 、2-環庚基苯基、2-環己基苯基、2-環庚基苯基、2-環 辛基苯基、3-環戊基苯基、3-環己基苯基、3-環庚基苯 基、3-環辛基苯基、4-環戊基氧化苯基、4-環己基氧化 苯基、4-環庚基氧化苯基、4-環辛基氧化苯基、2-環庚 基氧化苯基、2-環己基氧化苯基、2-環戊基氧化苯基、 2-環辛基氧化苯基、3-環戊基氧化苯基、3-環己基氧化 苯基、3-環庚基氧化苯基、3-環辛基氧化苯基、4-正戊 基苯基、4-正己基苯基、4-正庚基苯基、4-正辛基苯基 、2-正戊基苯基、2-正己基苯基、2-正庚基苯基、2-正 辛基苯基、3-正戊基苯基、3-正己基苯基、3-正庚基苯 基、3-正辛基苯基、2,6-二-異丙基苯基、2,3-二-異丙 基苯基、2,4-二-異丙基苯基、3,4-二-異丙基苯基、3, 6-二·第3-丁基苯基、2,3-二-第3-丁基苯基、2,4-二-第3-丁基苯基、3,4-二-第3-丁基苯基、2,6-二-第3-丁 基苯基、2, 3-二-第3-丁基苯基、2,4-二-第3-丁基苯基 -10- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 裝--- (請先閱讀背面之注意事項再填寫本頁) · 線. 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 495645 A7 B7 五、發明說明(9 ) 、3,4_二·第3-丁基苯基、2,6-二·異丁基苯基、2,3-二 -異丁基苯基、2,4-二-異丁基苯基、3 ,4-二-異丁基苯基 、2,6-二-第3-醯基苯基、2,3-二-第3-醯基苯基、2,4-二-第3-醯基苯基、3,4-二-第3-醯基苯基、2,6-二-異 釀基苯基、2,3 - -異釀基苯基、2,4 - 一* -異釀基苯基、 3,4·二-異醯基苯基、2,6-二-正戊基苯基、2,3-二-正 戊基苯基、2,4-二-正戊基苯基、3,4-二-正戊基苯基、 4-金剛烷基苯基、2-金剛烷基苯基、4-異冰片基苯基、 3-異冰片基苯基、2-異冰片基苯基、4-環戊基氧化苯基 、4-環己基氧化苯基、4-環庚基氧化苯基、4-環辛基氧 化苯基、2-環戊基氧化苯基、2-環己基氧化苯基、2-環 庚基氧化苯基、2-環辛基氧化苯基、3-環戊基氧化苯基 、3-環己基氧化苯基、3-環庚基氧化苯基、3-環辛基氧 化苯基、4-正戊基氧化苯基、4-正己基氧化苯基、4-正 庚基氧化苯基、4-正辛基氧化苯基、2-正戊基氧化苯基 、2-正己基氧化苯基、2-正庚基氧化苯基、2-正辛基氧 化苯基、3 -正戊基氧化苯基、3 -正己基氧化苯基、3 -正 庚基氧化苯基、3 -正辛基氧化苯基、2,6 -二-異丙基氧化 苯基、2,3-二-異丙基氧化苯基、2,4-二-異丙基氧化苯 基、3,4-二-異丙基氧化苯基、2,6-二-第3-丁基氧化苯 基、2,3·二-第3-丁基氧化苯基、2,4-二-第3-丁基氧化 苯基、3,4-二-第3-丁基氧化苯基、2,6-二-正丁基氧化 苯基、2,3-二-正丁基氧化苯基、2,4-二-正丁基氧化苯 基、3,4-二-正丁基氧化苯基、2,6-二·異丁基氧化苯基 -11- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)495645 A7 B7 V. Description of the invention (8) cyclooctadecyl, 4-cyclohexylcyclohexyl, 4-n-hexylcyclohexyl, pentylcyclohexyl, hexylcyclohexyl oxide, pentyl oxide cyclohexyl, 1-methyl -1-cyclohexyl, 2-methyl-1 -cyclohexyl, orthospinyl, adamantyl and the like. When the carbon number is within the above range, a ring-shaped radical other than the above may be used. The aryl group having 6 to 20 carbon atoms, preferably 11 to 20 carbon atoms, and more preferably 13 to 20 carbon atoms as shown in the above Z may be, for example, 4-methylphenyl, 4-ethylphenyl, or 2,4-dimethylamine. Phenyl, 2,4,6-trimethylphenyl, 4-th-butylphenyl, 4-cyclopentylphenyl, 4-cyclohexylphenyl, 4-cycloheptylphenyl, 4 -Cyclohexylphenyl, 2-cycloheptylphenyl, 2-cyclohexylphenyl, 2-cycloheptylphenyl, 2-cyclooctylphenyl, 3-cyclopentylphenyl, 3-cyclohexylbenzene , 3-cycloheptylphenyl, 3-cyclooctylphenyl, 4-cyclopentyloxyphenyl, 4-cyclohexyloxyphenyl, 4-cycloheptyloxyphenyl, 4-cyclooctyloxy Phenyl, 2-cycloheptyloxyphenyl, 2-cyclohexyloxyphenyl, 2-cyclopentyloxyphenyl, 2-cyclooctyloxyphenyl, 3-cyclopentyloxyphenyl, 3-cyclo Hexyloxyphenyl, 3-cycloheptyloxyphenyl, 3-cyclooctyloxyphenyl, 4-n-pentylphenyl, 4-nhexylphenyl, 4-n-heptylphenyl, 4-n-octyl Phenyl, 2-n-pentylphenyl, 2-n-hexylphenyl, 2-n-heptylphenyl, 2-n-octylphenyl, 3-n-pentylphenyl, 3-n-hexylphenyl, 3-n-heptylphenyl, 3-n-octylphenyl, 2,6- -Isopropylphenyl, 2,3-di-isopropylphenyl, 2,4-di-isopropylphenyl, 3,4-di-isopropylphenyl, 3,6-di 3-butylphenyl, 2,3-di-thi-butylphenyl, 2,4-di-thi-butylphenyl, 3,4-di-thi-butylphenyl, 2 , 6-Di-thi-butylphenyl, 2, 3-di-thi-butylphenyl, 2,4-di-thi-butylphenyl-10- This paper size applies to Chinese national standards (CNS) A4 Specification (210 X 297 mm) Packing --- (Please read the notes on the back before filling out this page) · Line. Printed by the Consumers ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economy Printed by the Consumer ’s Cooperatives of the Intellectual Property Bureau of the Ministry of Economy Printed 495645 A7 B7 V. Description of the invention (9), 3,4-di · 3-butylphenyl, 2,6-di · isobutylphenyl, 2,3-di-isobutylphenyl , 2,4-di-isobutylphenyl, 3,4-di-isobutylphenyl, 2,6-di-third-fluorenylphenyl, 2,3-di-third-fluorenyl Phenyl, 2,4-bis-thienylphenyl, 3,4-bis-thienylphenyl, 2,6-di-isopropynylphenyl, 2,3--isopropanol Phenylphenyl, 2,4-mono * -isopropenylphenyl, 3,4-di-isofluorenylphenyl, 2,6-di-n-pentylphenyl, 2,3-di-n-phenyl Phenyl, 2,4-di-n-pentylphenyl, 3,4-di-n-pentylphenyl, 4-adamantylphenyl, 2-adamantylphenyl, 4-isobornylbenzene Base, 3-isobornylphenyl, 2-isobornylphenyl, 4-cyclopentyloxyphenyl, 4-cyclohexyloxyphenyl, 4-cycloheptyloxyphenyl, 4-cyclooctyloxy Phenyl, 2-cyclopentyloxyphenyl, 2-cyclohexyloxyphenyl, 2-cycloheptyloxyphenyl, 2-cyclooctyloxyphenyl, 3-cyclopentyloxyphenyl, 3-cyclo Hexyloxyphenyl, 3-cycloheptyloxyphenyl, 3-cyclooctyloxyphenyl, 4-n-pentyloxyphenyl, 4-n-hexyloxyphenyl, 4-n-heptyloxyphenyl, 4 -N-octyloxyphenyl, 2-n-pentyloxyphenyl, 2-n-hexyloxyphenyl, 2-n-heptyloxyphenyl, 2-n-octyloxyphenyl, 3-n-pentyloxybenzene Base, 3-n-hexyloxyphenyl, 3-n-heptyloxyphenyl, 3-n-octyloxyphenyl, 2,6-di-isopropyloxyphenyl, 2,3-di-isopropyl Phenyl oxide, 2,4-di-isopropyloxyphenyl, 3,4-di-isopropyloxyphenyl, 2,6-di-third-butyloxyphenyl, 2,3 · -3-Butyloxyphenyl, 2,4-di-3-butyloxyphenyl, 3,4-di-3-butyloxyphenyl, 2,6-di-n-butyloxy Phenyl, 2,3-di-n-butyloxyphenyl, 2,4-di-n-butyloxyphenyl, 3,4-di-n-butyloxyphenyl, 2,6-di · isobutyl Phenyloxy-11- This paper is sized for China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

^5645 A7 B7 五、發明說明(10) 、2, 3 -二-異丁基氧化苯基、2,4 -二-異丁基氧化苯基、 3,4 -二-異丁基氧化苯基、2,6 -二-第3-醯基氧化苯基、 -I · I I (請先閱讀背面之注意事項再填寫本頁) 2,3-二-第3-醯基氧化苯基、2,4-二-第3-醯基氧化苯基 、3,4-二-第3-醯基氧化苯基、2,6_二-異醯基氧化苯基 ' 2,3-二-異醯基氧化苯基、2,4-二-異醯基氧化苯基、 3,4_二-異醯基氧化苯基、2,6-二-正戊基氧化苯基、2, 3 -二-正戊基氧化苯基、2,4 -二-正戊基氧化苯基、3,4-二-正戊基氧化苯基、4-金剛烷基氧化苯基、3-金剛烷基 氧化苯基、2-金剛烷基氧化苯基、4-異冰片基氧化苯基 、3-異冰片基氧化苯基、2-異冰片基氧化苯基等。若在 上述碳數之範圍内,亦可使用除上述外之取代芳基。 線· 經濟部智慧財產局員工消費合作社印製 上述Ζ所示之碳數7〜20、較佳者爲11〜20、更佳者爲 13〜20之芳烷基,例如有苯甲基、苯乙基、4-甲基苯基 乙基、2,4 -二甲基苯基乙基、4 -環戊基苯基乙基、4 -環 己基苯基乙基、4 -ί哀庚基苯基乙基、4-¾己基苯基乙基 、2_環戊基苯基乙基、2-環己基苯基乙基、2-環庚基苯 基乙基、2-環辛基苯基乙基、3-環戊基苯基乙基、3-環 己基苯基乙基、3-環庚基苯基乙基、3-環辛基苯基乙基 、4-環戊基氧化苯基乙基、4-環己基氧化苯基乙基、4-環庚基氧化苯基乙基、4-環辛基氧化苯基乙基、2-環庚 基氧化苯基乙基、2-環己基氧化苯基乙基、2-環戊基氧 化苯基乙基、2-環辛基氧化苯基乙基、3-環戊基氧化苯 基乙基、3 -環己基氧化苯基乙基、3 -環庚基氧化苯基乙 基、3 -環辛基氧化苯基乙基、4 -正戊基苯基乙基、4 -正 -12- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 —-------B7__ 五、發明說明(11 ) 己基苯基乙基、4-正庚基苯基乙基、4-正辛基苯基乙基 、2-正戊基苯基乙基、2-正己基苯基乙基、2-正庚基苯 基乙基、2-正辛基苯基乙基、3-正戊基苯基乙基、3-正 己基苯基乙基、3-正庚基苯基乙基、3-正辛基苯基乙基 、2,6-二-異丙基苯基乙基、2,3-二-異丙基苯基乙基、 2.4- 二-異丙基苯基乙基、3,4-二-異丙基苯基乙基、2, 6-二-第3-丁基苯基乙基、2,3-二-第3-丁基苯基乙基、 2.4- 二-第3-丁基苯基乙基、3,4-二-第3-丁基苯基乙基 、2,6-二-正丁基苯基乙基、2,3-二-正丁基苯基乙基、 2.4- 二-正丁基苯基乙基、3,4-二-正丁基苯基乙基、2, 6 -二-異丁基苯基乙基、2,3 -二-異丁基苯基乙基、2,4-二-異丁基苯基乙基、3,4_二-異丁基苯基乙基、2,6-二 -第3-醯基苯基乙基、2,3-二-第3-醯基苯基乙基、2,4-二-第3-醯基苯基乙基、3,4-二-第3_醯基苯基乙基、2, 6 -二-異釀基苯基乙基、2,3 -一-異釀基苯基乙基、2,4-二-異醯基苯基乙基、3,4-二-異醯基苯基乙基、2,6-二 -正戊基苯基乙基、2,3-二-正戊基苯基乙基、2,4-二-正戊基苯基乙基、3,4 -二-正戊基苯基乙基、4-金剛烷 基苯基乙基、2-金剛院基苯基乙基、4 -異冰片基苯基乙 基、3-異冰片基苯基乙基、2-異冰片基苯基乙基、4-環 戊基氧化苯基乙基、4 -環己基氧化苯基乙基、4 -環庚基 氧化苯基乙基、4 -環辛基氧化苯基乙基、2 -環戊基氧化 苯基乙基、2-環己基氧化苯基乙基、2-環庚基氧化苯基 乙基、2-環辛基氧化苯基乙基、3-環戊基氧化苯基乙基 -13- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 1裝—— (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 卜· 495645 A7 B7_ 五、發明說明(U) ,裝--- (請先閱讀背面之注意事項再填寫本頁) 、3 -環己基氧化苯基乙基、3 -環庚基氧化苯基乙基、3-環辛基氧化苯基乙基、4 -正戊基氧化苯基乙基、4 -正己 基氧化苯基乙基、4-正庚基氧化苯基乙基、4-正辛基氧 化苯基乙基、2-正戊基氧化苯基乙基、2-正己基氧化苯 基乙基、2 -正庚基氧化苯基乙基、2 -正辛基氧化苯基乙 基、3 -正戊基氧化苯基乙基、3 -正己基氧化苯基乙基、 3 -正庚基氧化苯基乙基、3 -正辛基氧化苯基乙基、2,6-二-異丙基氧化苯基乙基、2,3 -二-異丙基氧化苯基乙基 、2,4 -二-異丙基氧化苯基乙基、3,4 -二-異丙基氧化苯 基乙基、2,6 -二-第3 -丁基氧化苯基乙基、2, 3 -二-第3-丁基氧化苯基乙基、2,4-二-第3-丁基氧化苯基乙基、 線 3,4 -二-第3 -丁基氧化苯基乙基、2,6-二-正丁基氧化苯 基乙基、2,3-二-正丁基氧化苯基乙基、2,4-二-正丁基 氧化苯基乙基、3,4-二-正丁基氧化苯基乙基、2,6-二-異丁基氧化苯基乙基、2,3 -二-異丁基氧化苯基乙基、 2,4 -二-異丁基氧化苯基乙基、3,4 -二-異丁基氧化苯基 乙基、2,6 -二-第3 -醯基氧化苯基乙基、2, 3 -二-第3 -醯 基氧化苯基乙基、2,4 -二-第3 -醯基氧化苯基乙基、3, 經濟部智慧財產局員工消費合作社印製 4-二-第3-醯基氧化苯基乙基、2,6-二-異醯基氧化苯基 乙基、2,3 -二-異醯基氧化苯基乙基、2,4 -二-異醯基氧 化苯基乙基、3,4 -二-異醯基氧化苯基乙基、2,6 -二-正 戊基氧化苯基乙基、2 ,3 -二-正戊基氣化苯基乙基、2, 4-二-正戊基氧化苯基乙基、3,4-二-正戊基氧化苯基乙剛烷_ 氧化苯基乙基、3-金剛烷基氧化苯基乙基、2-金剛烷基氧化苯基乙基 -14- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 、4-異冰片基氧化苯基乙基、3-異冰片基氧化苯基乙基 、2 -異冰片基氧化苯基乙基等、或上述芳基烷基(芳烷 基)之烷基例如可以甲基、丙基、丁基等取代者等。 此外,Z之上述直鏈狀、支鏈狀或環狀烷基、芳基、 芳烷基之其他取代基例如有羥基、鹵素原子(氟、氯、溴 、碘)、硝基、氰基、上述之烷基、甲氧基、乙氧基、 羥基乙氧基、丙氧基、羥基丙氧基、正丁氧基、異丁氧 基、第2-丁氧基、第3-丁氧基等之烷氧基、甲氧基羰基 、乙氧基羰基等之烷氧基羰基、苯甲基、苯乙基、枯基 之芳烷基、芳烷基氧基、甲醯基、乙醯基、丁醯基、苯 醯基、青醯基、戊醯基等之醯基、丁醯氧基等之醯氧基 、上述之烯基、乙烯氧基、丙烯氧基、烯丙氧基、丁烯 氧基等之烯基氧基、上述之芳基、苯氧基等之芳氧基、 苯醯氧基等芳基氧羰基等。 藉由使碳數在更佳的範圍內,可顯著改善固定波或顯 像缺陷。因此,可得與特開平1 0-87724號公報中記載者 不同的效果。 一般式(IV)所示之基的具體例如下所示,惟不受此等 所限制。 -15- 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) (請先閱讀背面之注意事項再填寫本頁) 線· 495645 A7 B7 五、發明說明(Μ 經濟部智慧財產局員工消費合作社印製^ 5645 A7 B7 V. Description of the invention (10), 2, 3-di-isobutyloxyphenyl, 2,4-di-isobutyloxyphenyl, 3,4-di-isobutyloxyphenyl , 2,6-di-thi-thienyloxyphenyl, -I · II (Please read the notes on the back before filling out this page) 2,3-di-thi-thienyloxyphenyl, 2, 4-Di-thi-fluorenyloxyphenyl, 3,4-di-thi-fluorenyloxyphenyl, 2,6-di-isofluorenyloxyphenyl '2,3-di-isofluorenyl Phenyl oxide, 2,4-di-isofluorenyloxyphenyl, 3,4-di-isofluorenyloxyphenyl, 2,6-di-n-pentyloxyphenyl, 2, 3-di-n Amyloxyphenyl, 2,4-di-n-pentyloxyphenyl, 3,4-di-n-pentyloxyphenyl, 4-adamantyloxyphenyl, 3-adamantyloxyphenyl, 2-adamantyloxyphenyl, 4-isobornyloxyphenyl, 3-isobornyloxyphenyl, 2-isobornyloxyphenyl and the like. As long as the carbon number is within the above range, a substituted aryl group other than the above may be used. • The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints an aralkyl group with a carbon number of 7 to 20, preferably 11 to 20, and more preferably 13 to 20, such as benzyl and benzene. Ethyl, 4-methylphenylethyl, 2,4-dimethylphenylethyl, 4-cyclopentylphenylethyl, 4-cyclohexylphenylethyl, 4-hexylbenzene Ethyl, 4-¾hexylphenylethyl, 2-cyclopentylphenylethyl, 2-cyclohexylphenylethyl, 2-cycloheptylphenylethyl, 2-cyclooctylphenylethyl Base, 3-cyclopentylphenylethyl, 3-cyclohexylphenylethyl, 3-cycloheptylphenylethyl, 3-cyclooctylphenylethyl, 4-cyclopentyloxyphenylethyl Methyl, 4-cyclohexyloxyphenylethyl, 4-cycloheptyloxyphenylethyl, 4-cyclooctyloxyphenylethyl, 2-cycloheptyloxyphenylethyl, 2-cyclohexyloxy Phenylethyl, 2-cyclopentyloxyphenylethyl, 2-cyclooctyloxyphenylethyl, 3-cyclopentyloxyphenylethyl, 3-cyclohexyloxyphenylethyl, 3- Cycloheptyloxyphenylethyl, 3-cyclooctyloxyphenylethyl, 4-n-pentylphenylethyl, 4-n-12 Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 —------- B7__ 5. Description of the invention (11) Hexylphenylethyl, 4-n-heptylphenylethyl, 4-n-octylphenylethyl, 2-n-pentylphenylethyl, 2-n-hexylphenylethyl, 2-n-heptylphenylethyl, 2-n-octylphenylethyl, 3 -N-pentylphenylethyl, 3-n-hexylphenylethyl, 3-n-heptylphenylethyl, 3-n-octylphenylethyl, 2,6-di-isopropylphenylethyl Group, 2,3-di-isopropylphenylethyl, 2.4-di-isopropylphenylethyl, 3,4-di-isopropylphenylethyl, 2, 6-di-third -Butylphenylethyl, 2,3-di-three-butylphenylethyl, 2.4-di-thi-butylphenylethyl, 3,4-di-thi-butylbenzene Ethyl, 2,6-di-n-butylphenylethyl, 2,3-di-n-butylphenylethyl, 2.4-di-n-butylphenylethyl, 3,4-di- N-butylphenylethyl, 2,6-di-isobutylphenylethyl, 2,3-di-isobutylphenylethyl, 2,4-di-isobutylphenylethyl, 3,4-di-isobutylphenylethyl, 2,6-di-thi-thienylphenylethyl, 2,3-di-thi-thienyl Ethyl, 2,4-bis-thienylphenylethyl, 3,4-bis-thienylphenylethyl, 2,6-di-isopropylphenylethyl, 2,3-di-isopropylphenylethyl, 2,4-di-isofluorenylphenylethyl, 3,4-di-isofluorenylphenylethyl, 2,6-di-n-pentyl Phenylethyl, 2,3-di-n-pentylphenylethyl, 2,4-di-n-pentylphenylethyl, 3,4-di-n-pentylphenylethyl, 4- Adamantylphenylethyl, 2-adamantylphenylethyl, 4-isobornylphenylethyl, 3-isobornylphenylethyl, 2-isobornylphenylethyl, 4- Cyclopentyloxyphenylethyl, 4-cyclohexyloxyphenylethyl, 4-cycloheptyloxyphenylethyl, 4-cyclooctyloxyphenylethyl, 2-cyclopentyloxyphenylethyl Base, 2-cyclohexyloxyphenylethyl, 2-cycloheptyloxyphenylethyl, 2-cyclooctyloxyphenylethyl, 3-cyclopentyloxyphenylethyl-13- Paper size Applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 1 pack-(Please read the precautions on the back before filling out this page) Printed by the Employee Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs · 49 5645 A7 B7_ V. Description of the invention (U), installed --- (Please read the precautions on the back before filling out this page), 3-cyclohexyloxyphenylethyl, 3-cycloheptyloxyphenylethyl, 3-cyclooctyloxyphenylethyl, 4-n-pentyloxyphenylethyl, 4-n-hexyloxyphenylethyl, 4-n-heptyloxyphenylethyl, 4-n-octyloxybenzene Ethyl, 2-n-pentyloxyphenylethyl, 2-n-hexyloxyphenylethyl, 2-n-heptyloxyphenylethyl, 2-n-octyloxyphenylethyl, 3-n Pentyloxyphenylethyl, 3-n-hexyloxyphenylethyl, 3-n-heptyloxyphenylethyl, 3-n-octyloxyphenylethyl, 2,6-di-isopropyloxy Phenylethyl, 2,3-di-isopropyloxyphenylethyl, 2,4-di-isopropyloxyphenylethyl, 3,4-di-isopropyloxyphenylethyl, 2,6-di-3-th-butyloxyphenylethyl, 2, 3-di-th-butyloxyphenylethyl, 2,4-di-th-butyloxyphenylethyl , Line 3,4-Di-3-3-butyloxyphenylethyl, 2,6-Di-n-butyloxyphenylethyl, 2,3-Di-n-butyloxyphenylethyl Radical, 2,4-di-n-butyloxyphenylethyl, 3,4-di-n-butyloxyphenylethyl, 2,6-di-isobutylphenylphenylethyl, 2,3 -Di-isobutyloxyphenylethyl, 2,4-di-isobutyloxyphenylethyl, 3,4-di-isobutyloxyphenylethyl, 2,6-di-third -Fluorenyloxyphenylethyl, 2, 3 -di- 3rd-fluorenyl phenylethyl, 2,4-di- 3rd-fluorenyl phenylethyl, 3, Intellectual Property Office, Ministry of Economic Affairs Employees' Cooperatives printed 4-di-third-fluorenyloxyphenylethyl, 2,6-di-isofluorenyloxyphenylethyl, 2,3-di-isofluorenyloxyphenylethyl, 2,4-di-isofluorenyloxyphenylethyl, 3,4-di-isofluorenyloxyphenylethyl, 2,6-di-n-pentyloxyphenylethyl, 2,3-di -N-pentyl gasified phenylethyl, 2,4-di-n-pentyloxyphenylethyl, 3,4-di-n-pentyloxyphenylethanedamantane-phenylethyl oxide, 3- Adamantyl oxide phenylethyl, 2-adamantyl oxide phenyl ethyl-14- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 Member of Intellectual Property Bureau, Ministry of Economic Affairs Printed by Consumer Cooperatives 5. Description of the invention (, 4-isobornyl oxide phenylethyl, 3-isobornyl oxide phenylethyl, 2-isobornyl oxide phenylethyl, etc., or the above arylalkyl Examples of the (aralkyl) alkyl group include methyl, propyl, and butyl substituents. In addition, the aforementioned linear, branched or cyclic alkyl, aryl, and other arylalkyl substituents of Z include, for example, a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, Alkyl, methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxypropoxy, n-butoxy, isobutoxy, 2-butoxy, 3-butoxy Alkoxycarbonyl groups such as alkoxy, methoxycarbonyl, ethoxycarbonyl, benzyl, phenethyl, cumyl, aralkyl, aralkyloxy, formamyl, ethenyl , Butylamino, phenylfluorenyl, cyanoyl, pentyl, and the like, fluorenyl and the like, butyloxy, and the like, alkenyl, vinyloxy, allyloxy, allyloxy, and butenyloxy Alkenyloxy such as aryl, aryloxy such as aryl, phenoxy, and aryloxycarbonyl such as phenylfluorenyl. By keeping the carbon number in a better range, the fixed wave or imaging defect can be significantly improved. Therefore, effects different from those described in Japanese Patent Application Laid-Open No. 10-87724 can be obtained. Specific examples of the base represented by the general formula (IV) are shown below, but are not limited thereto. -15- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 χ 297 mm) (Please read the notes on the back before filling out this page) Line 495645 A7 B7 V. Description of Invention (M Intellectual Property of the Ministry of Economic Affairs Printed by Bureau Consumers Cooperative

(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(β 經濟部智慧財產局員工消費合作社印製(Please read the precautions on the back before filling this page) This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 B7 V. Description of invention (β printed by Employee Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs) system

(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(4) 〜。ηΓ 〜。r〇 0 〇 U II 0 0 〜。r〇 丫 0 η裝· 11 (請先閱讀背面之注意事項再填寫本頁) . 線 經濟部智慧財產局員工消費合作社印制衣 18 _ 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) 495645 A7 B7 五、發明說明(7 經濟部智慧財產局員工消費合作社印製(Please read the precautions on the back before filling out this page) The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 V. Description of the invention (4) ~. ηΓ ~. r〇 0 〇 U II 0 0 ~. r〇 丫 0 η installed · 11 (Please read the precautions on the back before filling out this page). Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Online Economics 18 _ This paper size applies to China National Standard (CNS) A4 specifications (210 χ 297 mm) 495645 A7 B7 V. Description of Invention (7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(19) 一般式(III)中r3係爲氫原子或甲基。 --- (請先閱讀背面之注意事項再填寫本頁) X係表示可具取代基之飽和縮合多環型烴基或可具取 代基之飽和橋連環烴基。 飽和縮合多環型烴基以碳數9〜20之飽和縮合多環型 煙基較佳,例如過氫化節、過氫化萘、過氣化奧、過氣 化庚烯、過氫化聯苯、過氫化苯并二茚、過氫化厄烯、過 氫化芴、過氫化菲、過氫化熒蒽、過氫化1,2-苯并菲等 ,惟不受此等所限制。該飽和縮合多環型烴基係以2〜4 環較佳。 取代基係以碳數1〜4之直鏈、支鏈的烷基、羥基、鹵 素原子、胺基等較佳。 經濟部智慧財產局員工消費合作社印製 飽和橋連環烴基係以碳數7〜20的飽和橋連環烴基較 佳,例如有金剛烷基、甲基金剛烷基、原菠烷基、甲基 原菠烷基、異冰片基、2-原菠烷基甲基、3-甲基-2-原 菠烷基甲基、4-戊基二環[2,2,2]辛基、1-金剛烷基甲 基、1-金剛烷基乙基、三環[5.2.1. 02’6]癸基、四環 [6.2. 1 . 13’6.02,7]十二烷基、六環[6.6.1.13,6.11(),13· 02,7.09,14]十七烷基等,惟不受此等所限制。該飽和橋連 環烴基係以橋頭碳原子(藉由碳原子橋連結時,二個環所 共有的2個第三碳原子)之數爲2〜8、尤以2〜6較佳。 於此等之中,尤其就解像力而言以金剛烷基、原菠烷 基、異冰片基、三環[5.2. 1.02,6]癸基、四氫 [6.2.1.13,6.02,7]十二烷基。 取代基以碳數1-4之直鏈、支鏈的烷基、羥基、鹵素(Please read the precautions on the back before filling this page) This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 V. Description of the invention (19) r3 series in general formula (III) Is a hydrogen atom or a methyl group. --- (Please read the notes on the back before filling this page) X is a saturated condensed polycyclic hydrocarbon group which may have a substituent or a saturated bridged cyclic hydrocarbon group which may have a substituent. The saturated condensed polycyclic hydrocarbon group is preferably a saturated condensed polycyclic nicotyl group having a carbon number of 9 to 20, such as perhydrogenated section, perhydronaphthalene, pervaporated Austria, pervaporated heptene, perhydrobiphenyl, perhydrogenated. Benzoindene, perhydrone, perylene hydrogen peroxide, phenanthrene perhydrogen, fluoranthene perhydrogen, 1,2-phenanthrene perhydrogen, and the like are not limited thereto. The saturated condensation polycyclic hydrocarbon group preferably has 2 to 4 rings. The substituent is preferably a linear or branched alkyl group having 1 to 4 carbon atoms, a hydroxyl group, a halogen atom, an amine group, or the like. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints saturated bridged cyclic hydrocarbon groups with saturated bridged cyclic hydrocarbon groups having 7 to 20 carbon atoms. For example, there are adamantyl, methyladamantyl, ortho-alkyl, methyl-ortho-alkyl Alkyl, isobornyl, 2-orthospinylmethyl, 3-methyl-2-orthospinylmethyl, 4-pentylbicyclo [2,2,2] octyl, 1-adamantane Methyl, 1-adamantylethyl, tricyclic [5.2.1. 02'6] decyl, tetracyclic [6.2. 1. 13'6.02, 7] dodecyl, hexacyclic [6.6.1.13 , 6.11 (), 13.02,7.09, 14] Heptadecyl, etc., but not limited by these. The number of saturated bridged cyclic hydrocarbon groups is 2 to 8, especially 2 to 6, with carbon atoms at the head of the bridge (two third carbon atoms shared by the two rings when connected by a carbon atom bridge). Among these, especially in terms of resolution, adamantyl, orthospinyl, isobornyl, tricyclo [5.2. 1.02,6] decyl, tetrahydro [6.2.1.13,6.02,7] alkyl. Substituents are straight-chain, branched-chain alkyl, hydroxy, and halogen having 1-4 carbon atoms

-21-上接第19M 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(20) 原子、胺基等。 此外,於上述一般式(V)所示之構造單位中’ 1^係表 示氫原子或甲基、R係表示氫原子、碳數1〜4之直鏈狀 或支鏈狀烷基、甲氧基或乙醯基。R之取代位置係爲2-、3-、4-位,較佳者爲4-位。 烷基之具體例如甲基、乙基、丙基、異丙基、正丁基 、第2-丁基、第3-丁基等,以甲基、第3_ 丁基較佳。 共聚物A之重量平均分子量藉由凝膠滲透層析法、以 聚苯乙烯換算分子量(Mw)測定時,較佳者爲2,000〜 1,000,000,更佳者爲 2,000〜500,000、最佳者爲 2,〇〇〇 〜30,000。若分子量爲2,000以下時阻體膜減少量極大 ,而若大於1,000,000時溶解性惡化、解像力降低。 更具體的共聚物A之構造如下所示,惟本發明不受此 等所限制。而且,於下述之具體例中Et係表示乙基、第 3-Bu或第3-丁基,Ac係表示乙醯基。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -22- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公蓳) 495645 A7 B7 五、發明說明(H ) 經濟部智慧財產局員工消費合作社印製-21-continued on the 19M This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 B7 V. Description of the invention (20) Atoms, amines, etc. In addition, in the structural unit represented by the general formula (V), '1 ^' represents a hydrogen atom or a methyl group, R represents a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, and methoxy group. Or ethyl. The substitution position of R is the 2-, 3-, and 4-position, and the 4-position is preferred. Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a 2-butyl group, a 3-butyl group, and the like, and a methyl group and a 3-butyl group are preferable. When the weight-average molecular weight of the copolymer A is measured by gel permeation chromatography and molecular weight (Mw) in terms of polystyrene, it is preferably 2,000 to 1,000,000, more preferably 2,000 to 500,000, and most preferably 20,000 ~ 30,000. If the molecular weight is 2,000 or less, the reduction of the barrier film is extremely large, while if it is more than 1,000,000, the solubility deteriorates and the resolution decreases. A more specific structure of the copolymer A is shown below, but the present invention is not limited thereto. In the following specific examples, Et represents ethyl, 3-Bu, or 3-butyl, and Ac represents ethenyl. (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-22- This paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 cm) 495645 A7 B7 V. Description of the Invention (H) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

-23- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 - A7 ______B7 五、發明說明(》) 經濟部智慧財產局員工消費合作社印製-23- (Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 495645-A7 ______B7 V. Description of Invention (") Intellectual Property of the Ministry of Economic Affairs Printed by Bureau Consumers Cooperative

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

495645 五 十 經濟部智慧財產局員工消費合作社印製495645 50 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) (請先閱讀背面之注意事項再填寫本頁)This paper size applies to Chinese National Standard (CNS) A4 (210 χ 297 mm) (Please read the precautions on the back before filling this page)

495645 - A7 ____B7 五、發明說明(Μ ) 經濟部智慧財產局員工消費合作社印製495645-A7 ____B7 V. Description of Invention (Μ) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -26- 495645 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(25) 本發明所使用的光酸發生劑(b )係爲藉由活性光線或 放射線照射以產生酸之化合物。 本發明所使用的藉由活性光線或放射線照射而產生酸 之化合物,可使用光陽離子聚合之光起始劑、光游離基 聚合之光起始劑、色素類之光消色劑、光變色劑、或微 阻體等所使用的習知光( 400〜200nm之紫外線、尤以g線 、h線、i線、KrF準分子雷射光)、ArF準分子雷射光、 電子線、X線、分子線或離子束以產生酸之化合物及適 當地選擇此等混合物。 此外,其他的本發明所使用的藉由活性光線或放射線 照射以產生酸之化合物,例如有S.I.Schle singer, Photogr_Sci.Eng.,18,387(1974)、T.S.Bal et al, Polymer,21,423 ( 1 980 )等所記載的二偶氮鏺鹽、美國專 利第4,069,055號、同4,069,056號、同27,992號、特開 平3-140140號等所記載的銨鹽、D.C.Necker et al, Macromolecules,17» 2468(1984) 'C.S.Wen et al,The, Proc.Conf.Rad Curing ASIA,p.478 Tokyo, 〇ct(1988) 、美國專利第4.069,055號、同4,069,056號所記載的磷 鏺鹽、J.V.Crivello et al,Macromorecules, 10( 6 ) , 1 307 ( 1 977 ) ,Chem.& Eng. News , Nov .28,p.31 ( 1 988 )、歐洲專利第 1 04,143 號、同 339,049 號、同410,201號、特開平2 - 1 50848號、特開平2-296 5 14 號等記載的碘鐵鹽、J.V.Crivello et al,Polymer J.17, 73 ( 1 985 )' J.V.Crivello et a 1 , J.Org.Chem. ,43,3055 -27- (請先閱讀背面之注意事項再填寫本頁) 裝 . • —線 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(26) (1978) 'W.R.Watt et al,J.Polymer.Sci.,Polymer Chem.Ed. ,22, 1789(1984) 、J.V.Crivello et al,(Please read the precautions on the back before filling this page) This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) -26- 495645 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs DESCRIPTION OF THE INVENTION (25) The photoacid generator (b) used in the present invention is a compound that generates an acid by irradiation with active light or radiation. The compound used in the present invention to generate an acid by irradiation with active light or radiation can use a photoinitiator, a photoinitiator, a photoinitiator, a photochromic agent, and a photochromic agent. Or conventional light used by microresistors (400 ~ 200nm UV, especially g-line, h-line, i-line, KrF excimer laser light), ArF excimer laser light, electron beam, X-ray, molecular beam or Ion beam to generate acid compounds and select these mixtures appropriately. In addition, other compounds used in the present invention to generate acid by irradiation with active light or radiation are, for example, SIschle singer, Photogr_Sci. Eng., 18,387 (1974), TSBal et al, Polymer, 21,423 (1 980), etc., the ammonium salts described in U.S. Patent Nos. 4,069,055, the same as 4,069,056, the same as 27,992, the Japanese Patent Application No. 3-140140, DCNecker et al, Macromolecules, 17 »2468 ( (1984) 'CSWen et al, The, Proc. Conf. Rad Curing ASIA, p. 478 Tokyo, Oct (1988), U.S. Patent No. 4.069,055, Phosphonium Salt described in No. 4,069,056, JVCrivello et al, Macromorecules, 10 (6), 1 307 (1 977), Chem. & Eng. News, Nov. 28, p. 31 (1 988), European Patent No. 1 04,143, same as 339,049, same as 410,201 Ferric iodide as described in Japanese Patent Application Laid-open No. 2-1 50848, Japanese Patent Application No. 2-296 5 14 and the like, JVCrivello et al, Polymer J. 17, 73 (1 985) 'JVCrivello et a 1, J. Org. Chem., 43, 3055 -27- (Please read the notes on the back before filling this page) Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 B7 V. Description of invention (26) (1978) 'WR Watt et al, J. Polymer. Sci., Polymer Chem. Ed., 22, 1789 (1984 ), JVCrivello et al,

Polymer Bull. ,14,279(1985)、 J.V.Crivello et al, Macromorecules,14(5 ) , 1141 ( 1981 ) ' J.V, Crivello et al,J.Polymer.Sci.,Polymer Chem.Ed·,17,2877 ( 1 979 )、歐洲專利第370,693號、同161,811號、同 410,201 號、同 339,049 號、同 233,567 號、同 297,443 號、同297,442號、美國專利第3,902,114號、同 4,933,377號、同 4,760,013號、同 4,734,444號、同 2,83 3,827 號、德國專利第 2,904,626 號、同 3,604,580 號、同3,604,581號等所記載的毓鹽、J.V.Crivello et al,Macromorecules,10(6),1307(1977)' J.V.Crivello et al,J.Polymer.Sci.,Polymer Chem.Ed.,17,1047 ( 1 979 )等記載的硒鏺鹽、C.S.Wen et al.,The,Proc. Conf.Rad. Curing ASIA,p.478 Tokyo,Oct(1988)等記 載的砷鹽等之鏺鹽、美國專利第3,905, 81 5號、特公昭 46-4605號、特開昭48- 36281號、特開昭55 - 32070號、 特開昭60- 239736號、特開昭61 - 169835號、特開昭61-169837號、特開昭62- 58241號、特開昭62-21 2401號、 特開昭63 - 70243號、特開昭63 - 298339號等所記載的有 機鹵素化合物、K.Meier et al,J.Rad.Curing,13(4), 26(1986) 'T.P.Gill et al,Inorg.Chem.,19,3007 (1980) ' D.Astruc,Acc. Chem.Res.,19(12),377(1896) -28- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) K裝—— (請先閱讀背面之注意事項再填寫本頁) 訂·· .線· 經濟部智慧財產局員工消費合作社印製 A7Polymer Bull., 14,279 (1985), JVCrivello et al, Macromorecules, 14 (5), 1141 (1981) 'JV, Crivello et al, J. Polymer. Sci., Polymer Chem. Ed., 17, 2877 (1 979), European Patent Nos. 370,693, same as 161,811, same as 410,201, same as 339,049, same as 233,567, same as 297,443, same as 297,442, US Patent No. 3,902,114, same as 4,933,377, same as 4,760,013, same as No. 4,734,444, No. 2,83 3,827, German Patent No. 2,904,626, No. 3,604,580, No. 3,604,581, etc., JVCrivello et al, Macromorecules, 10 (6), 1307 (1977) 'JVCrivello et al, J. Polymer. Sci., Polymer Chem. Ed., 17, 1047 (1 979) and other selenium salts, CSWen et al., The, Proc. Conf. Rad. Curing ASIA, p. 478 Tokyo , Osmium salts such as arsenic salts as described in Oct (1988), U.S. Patent No. 3,905,81 5; Kai Sho 60-239736, JP 61-169835, JP 61-169837, JP 62-58241, JP 62-21 2401, JP Organic halogen compounds described in 63-70243, JP-A-63-298339, etc., K. Meier et al, J. Rad. Curing, 13 (4), 26 (1986) 'TPGill et al, Inorg.Chem ., 19,3007 (1980) 'D. Astruc, Acc. Chem. Res., 19 (12), 377 (1896) -28- This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) ) K Pack-(Please read the precautions on the back before filling out this page) Order · · · Line · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7

五、發明說明(27 ) 經濟部智慧財產局員工消費合作社印製 、特開平2 - 1 61 445號等記載之有機金屬/有機鹵素化物、 S.Hayase et al,J.Polymer Sci.,25,753(1987)'E. Reichmanis et a 1,J.Polymer Sc i. , Po1yme r Chem. Ed.,23,l(1985)'Q.Q.Zhu et al,J.Photochem.,36, 85,39,317(1987) ' B.Amit et al,Tetrahedron Le 1 1. ,( 24 ) 2205 ( 1 973 ) ' D.H.R. Barton et al,J.V. Description of the invention (27) Organometallic / organohalide printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, JP-A No. 2-1 61 445, etc., S. Hayase et al, J. Polymer Sci., 25,753 ( 1987) 'E. Reichmanis et a 1, J. Polymer Sc i., Poyme r Chem. Ed., 23, l (1985)' QQZhu et al, J. Photochem., 36, 85, 39,317 (1987) ' B. Amit et al, Tetrahedron Le 1 1., (24) 2205 (1 973) 'DHR Barton et al, J.

Chem.Soc.,3571(1965) 'P.M.Collins et al,J.Chem. Soc., 3571 (1965) 'P.M.Collins et al, J.

Chem.Soc. ,Perkin 1,1695(1975) 、M.Rudinstein et al,Tetrahedon Lett.,(17), 1445 (1975)、 J.W.Walker et a 1 , J. Am .Chem.Soc. , 11 0,7170 ( 1 988 ) ' S.C. Busman et al,J.Imaging Technol.,11 ( 4 ),19 1 ( 1 985 ) ' H.M.Houlihan et a 1 , Macromo1 ecu 1es ,21,2001(1988) 'P.M.Collins et al,J.Chem.Soc.,Chem. Soc., Perkin 1, 1695 (1975), M. Rudinstein et al, Tetrahedon Lett., (17), 1445 (1975), JWWalker et a 1, J. Am. Chem. Soc., 11 0, 7170 (1 988) 'SC Busman et al, J. Imaging Technol., 11 (4), 19 1 (1 985)' HMHoulihan et a 1, Macromo1 ecu 1es, 21, 2001 (1988) 'PMCollins et al J. Chem. Soc.,

Chem· Commun. ,532( 1972 )、S.Hayase et al,Chem. Commun., 532 (1972), S. Hayase et al,

Macromo1ecu1es,1 8,1 799( 1 985 ) ' E. Reichmanis et al, J. Electrochem.Soc. , So 1 id State Sci. Techno 1 ., 130(6) ' F. M.Houlihan et a 1 , Macromo1ecu1es,21, 2001 ( 1 988 )、歐洲專利第 0290,750 號、同 046,083 號、 同1 56,535號、同271,851號、同0,388,343號、美國專 利第 3,901,710 號、同 4,181,531 號、特開昭 60 - 1 98 5 38 號、特開昭53 _ 1 33022號等記載的具有鄰-硝基苯甲基型 保護基之光發生劑、M.TUNOOKA et al,Polymer Preprints Japan,35(8) ' G.Berner et al,J.Rad.. Curing,13(4) 、 W.J.Mijs et al,Coating Technol,55 •29- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) ' (請先閱讀背面之注意事項再填寫本頁)Macromo1ecu1es, 1 8,1 799 (1 985) 'E. Reichmanis et al, J. Electrochem.Soc., So 1 id State Sci. Techno 1., 130 (6)' FMHoulihan et a 1, Macromo1ecu1es, 21, 2001 (1 988), European Patent No. 0290,750, Same No. 046,083, Same No. 56,535, No. 271,851, Same No. 0,388,343, US Patent No. 3,901,710, Same No. 4,181,531, Special Photogenerating agents with ortho-nitrobenzyl type protecting groups as described in Kaisho 60-1 98 5 38, JP 53-1 33022, etc., M.TUNOOKA et al, Polymer Preprints Japan, 35 (8 ) 'G. Berner et al, J. Rad .. Curing, 13 (4), WJMijs et al, Coating Technol, 55 • 29- This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) ) '(Please read the notes on the back before filling out this page)

A7 A7 經濟部智慧財產局員工消費合作社印製 ^^^_BZ____ 五、發明說明(28 ) ( 697 ),45 ( 1 983 ) ' Akzo.H. Adachi et al,Polymer Preprints,Japan, 37(3)、歐洲專利第 0199,672 號、同 84,515號、同 〇44,115號、同 618,564號、同 0101,122 號 、美國專利第4,371,605號、同4,431,774號特開昭64-18143號、特開平2 - 245756號、特願平3 - 140 1 09號等記 載的胺基磺酸酯等典型的光分解而產生磺酸之化合物、 特開昭61 - 166544號等記載的二楓化合物。 而且,此等藉由光而產生酸之基、或使化合物導入聚 合物之主鏈或側鏈之化合物,例如可使用M.E.A7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^^^ _ BZ____ V. Description of Inventions (28) (697), 45 (1 983) '' Akzo.H. Adachi et al, Polymer Preprints, Japan, 37 (3) , European Patent No. 0199,672, Same No. 84,515, Same No. 04,115, Same No. 618,564, Same No. 0101,122, US Patent No. 4,371,605, Same No. 4,431,774 JP 64-18143 JP-A No. 2-245756, JP-A No. 3-140 1 09 and other typical photodecomposition compounds that generate sulfonic acids, such as sulfamates, and JP-A 61-166544 and other di-maple compounds . In addition, for example, M.E. can be used to generate an acidic group by light or to introduce a compound into a main or side chain of a polymer.

Woodhouse et a 1 , J. Am .Chem. Soc.,104, 5586( 1982 ) S.P.Pappas et al,J.Imaging Sci. ,30( 5 ) , 21 8( 1986 ) 、S.Kondo et al,Makromol.Chem. ,Rapid Commun.,9, 625 ( 1 988 ) ' Y. Yamada et a 1 , Makromo1.Chem. ,152, 153,163(1972) ' J.V.Crivello et al.,J. Polymer Sc i ·,Polymer Chem .Ed.,1 7,3845 ( 1 979 )、美國專利第 3,849,1 37號、德國專利第3914407號、特開昭63 - 26653 號、特開昭55 - 164824號、特開昭62 -69263號、特開昭 63 - 1 46038 號、特開昭 63 - 1 63452 號、特開昭 62 - 1 53853 號 、特開昭63_ 146029號等記載的化合物。 此外,亦可使用 N.R.Pillai,Synthesis,(1), 1(1980) 、 A.Abad et al, Tetrahedron Lett.,(47)4555 (1971) 'D.H.R.Barton et al,J.Chem.Soc.,(C),329 ( 1 970)、美國專利第3,799,778號、歐洲專利第126,712 號所記載的藉由光以產生酸之化合物。 於下述中說明有關所使用的上述藉由活性光線或放射 •30- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)Woodhouse et a 1, J. Am. Chem. Soc., 104, 5586 (1982) SPPappas et al, J. Imaging Sci., 30 (5), 21 8 (1986), S. Kondo et al, Makromol. Chem., Rapid Commun., 9, 625 (1 988) 'Y. Yamada et a 1, Makromo 1. Chem., 152, 153, 163 (1972)' JVCrivello et al., J. Polymer Sci., Polymer Chem. Ed., 1,7,845 (1,979), U.S. Patent No. 3,849,137, German Patent No. 3914407, Japanese Patent Application No. 63-26653, Japanese Patent Application No. 55-164824, Japanese Patent Application No. 62-69263 , Compounds described in JP-A-Sho 63-1 46038, JP-A-Sho 63-1 63452, JP-A-Sho 62-1 53853, JP-A-Sho 63-146029 and the like. Alternatively, NRPillai, Synthesis, (1), 1 (1980), A. Abad et al, Tetrahedron Lett., (47) 4555 (1971) 'DHR Barton et al, J. Chem. Soc., ( C), 329 (1970), U.S. Patent No. 3,799,778 and European Patent No. 126,712 are compounds that generate light by light. The following explains the use of the above-mentioned by active light or radiation • 30- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page )

495645 A7 ____ B7____五、發明說明(29 ) 線照射而產生酸之化合物中尤爲有效者。 (1 )三鹵素甲基取代的下述一般式(PAG 1 )所示之三嗪衍 生物或一般式(PAG2)所示之S-三嗪衍生物。495645 A7 ____ B7____ V. Description of the invention (29) Among the compounds that produce acid by irradiation with radiation, it is particularly effective. (1) A trihalomethyl substituted triazine derivative represented by the following general formula (PAG 1) or an S-triazine derivative represented by the general formula (PAG2).

R N—N // \\人/C、 201 (PAG1) 七⑺3 R202人Λ(Y)3c N C(Y)3 (PAG2) (其中,R2(H係表示經取代或未取代的芳基、烯基,R 係表不經取代或未取代的芳基、儲基、院基、_ C (γ) 3。 Y係表示氯原子或溴原子。 具體而Η例如有下述之化合物,惟本發明不受此等所 限制。 202 (請先閱讀背面之注意事項再填寫本頁)RN—N // \\ person / C, 201 (PAG1) Nan⑺3 R202 human Λ (Y) 3c NC (Y) 3 (PAG2) (wherein R2 (H represents a substituted or unsubstituted aryl, alkene R represents an unsubstituted or unsubstituted aryl group, a storage group, a radical, _ C (γ) 3. Y represents a chlorine atom or a bromine atom. Specific examples include the following compounds, but the present invention Not subject to these. 202 (Please read the notes on the back before filling out this page)

經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(Μ Ν—Ν Cl"\ j-CH = CH~ CN〇 C ~ CC13 (PAG1 -1) _ Ν—N CH3 义)-CH = CH 一 C、〇 /O CC13 (PAG1 — 2)Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 V. Description of the invention (ΜΝΝΝ Cl " \ j-CH = CH ~ CN〇C ~ CC13 (PAG1 -1) _ Ν—N CH3 meaning) -CH = CH-C, 〇 / O CC13 (PAG1 — 2)

CH3O 〇 N—N // \\ CH = CH-C C 一 CBr3 (PAG1 - 3) (請先閱讀背面之注意事項再填寫本頁) (n)C4H90 〇 N—N // \\ CH = CH—C C - CCI3 (PAG1-4) 0CH3O 〇N—N // \\ CH = CH-C C-CBr3 (PAG1-3) (Please read the notes on the back before filling this page) (n) C4H90 〇N—N // \\ CH = CH —CC-CCI3 (PAG1-4) 0

N—N // \\ CH = CH - C C 一 CCI3 、0, (PAG1 - 5) 經濟部智慧財產局員工消費合作社印製 C C-CCI3、〇〆 (PAG1 - 6) N—N // \\ . •CH = CH - C C - CCI3 nrv< (PAGl - 7) 〇-ch=ch〇- N—N // \\ CH = CH - C C 一 CC13 (PAGl - 8) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -32- 495645 A7 B7 五、發明說明(y CC13 CI3C 人 N CCl3 • (PAG2-1)N—N // \\ CH = CH-CC-CCI3, 0, (PAG1-5) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, C C-CCI3, 〇 (PAG1-6) N—N // \ \. • CH = CH-CC-CCI3 nrv < (PAGl-7) 〇-ch = ch〇- N—N // \\ CH = CH-CC-CC13 (PAGl-8) This paper standard applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) -32- 495645 A7 B7 V. Description of invention (y CC13 CI3C human N CCl3 • (PAG2-1)

C13CC13C

N CC13 (PAG2 - 2)N CC13 (PAG2-2)

(PAG2 - 3)(PAG2-3)

(PAG2 - 4) (請先閱讀背面之注意事項再填寫本頁)(PAG2-4) (Please read the notes on the back before filling this page)

(PAG2 - 5),(PAG2-5),

COCH3 經濟部智慧財產局員工消費合作社印製COCH3 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

N C13C人入此 (PAG2 - 7) (PAG2-6)N C13C people here (PAG2-7) (PAG2-6)

(PAG2 - 8) -33- 卜紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐 495645 Α7(PAG2-8) -33- Paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm 495645 Α7)

(PAG2-10) (2)下述一般式(PAG3)所示之碘鏺鹽、或—般式(pAG4) 所示之銃鹽。 κ (PAG3) Ζ·(PAG2-10) (2) An iodonium salt represented by the following general formula (PAG3) or a phosphonium salt represented by the general formula (pAG4). κ (PAG3) ZZ ·

R R 204 203 一 S+ Ζ — Ϊ裝— (請先閱讀背面之注意事項再填寫本頁) 訂R R 204 203 One S + ZO — Outfit — (Please read the notes on the back before filling this page) Order

R 205 經濟部智慧財產局員工消費合作社印製 (PAG4) (其中,Ar1、Ar2係表示各爲獨立的經取代或未經取代 的芳基,較佳的取代基例如有烷基、鹵化烷基、環院基 '芳基、烷氧基、硝基、羧基、烷氧基羰基、羥基、硫 醇基及鹵素原子。 R2〇3、R2〇4、R2〇5係各表示獨立的經取代或未取代的烷 基、芳基。較佳者爲碳數6〜14之芳基、碳數1〜8之院 基及此等之取代衍生物。較佳的取代基對芳基而言有碳 數1〜8之烷氧基、碳數1〜8之烷基、硝基、羧基、羥基 及鹵素原子,對烷基而言有碳數1〜8之烷氧基、羧基、 ί完氧基竣基。 -34- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 線 495645 A7 B7 五、發明說明(33) Z-係表示對陰離子,例如BF4·、AsF6_、SbF6-、 (請先閱讀背面之注意事項再填寫本頁)R 205 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (PAG4) (where Ar1 and Ar2 represent independent substituted or unsubstituted aryl groups, and the preferred substituents are alkyl and halogenated alkyl , Cyclic alkyl 'aryl, alkoxy, nitro, carboxyl, alkoxycarbonyl, hydroxyl, thiol, and halogen atoms. R2O3, R2O4, and R2O5 each represent an independently substituted or Unsubstituted alkyl group and aryl group. Preferred are aryl group having 6 to 14 carbon atoms, courtyard group having 1 to 8 carbon atoms and substituted derivatives thereof. The preferred substituent group has carbon for the aryl group. Alkoxy groups having 1 to 8 carbons, alkyl groups having 1 to 8 carbon atoms, nitro, carboxyl, hydroxyl, and halogen atoms. For alkyl groups, there are alkoxy groups having 1 to 8 carbon atoms, carboxyl groups, and yloxy groups. -34- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) line 495645 A7 B7 V. Description of the invention (33) Z-series means anion, such as BF4 ·, AsF6_, SbF6 -、 (Please read the notes on the back before filling this page)

SiF6_ ' SiF6_、C104_、CF3S03_等過氟鏈烷基磺酸陰離子 、五氟苯磺酸陰離子、萘-1-磺酸陰離子等縮合多核芳香 族磺酸陰離子、蒽醌磺酸陰離子、含磺酸基之染料等,惟 本發明不受此等所限制。 而且,R2Q3、R2。4、R2Q5中至少2個及Ar1、Ar2可各爲單 鍵或經由取代基鏈結。 而且,曝光後加熱處理後之經時性能變化(T-Top形成 、線寬變化等)小的光酸發生劑較佳。該光酸發生劑例 如於上述一般式(PAG3)、(PAG4)中 Ar1、Ar2、R2G3 〜R205 係表示取代或未取代之芳基,Z-係爲藉由光照射產生酸時 阻體膜中擴散性較小者。具體而言,2_係表示具有至少1 個選自支鏈狀或環狀碳數8個以上烷基或烷氧基、或具有 至少2個選自支鏈狀、支鏈狀或環狀碳數4〜7個烷基或院 氧基、或具有至少3個選自直鏈狀或支鏈狀碳數1〜3烷基 或烷氧基之苯磺酸、萘磺酸或蒽磺酸之陰離子。 經濟部智慧財產局員工消費合作社印製 具體例如下述所示之化合物,惟本發明不受此等所限 制。 -35- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 - A7 _____B7 五、發明說明(Μ ) 經濟部智慧財產局員工消費合作社印製 0~i+_h0 bf「 (PAG3 -1) α-ι+-ο pf6- (PAG3-2) 0~i+_0 asf「 (PAG3-3) *SiF6_ 'SiF6_, C104_, CF3S03_ and other polyfluorinated aromatic sulfonic acid anions, anthraquinone sulfonic acid anions, anthraquinone sulfonic acid anions, etc. Dyes and the like, but the present invention is not limited by them. In addition, at least two of R2Q3, R2.4, and R2Q5 and Ar1 and Ar2 may each be a single bond or linked through a substituent. Further, a photoacid generator having a small change in performance over time (T-Top formation, line width change, etc.) after the heat treatment after exposure is preferred. The photoacid generator is, for example, Ar1, Ar2, R2G3 to R205 in the general formulae (PAG3) and (PAG4) above, which represent a substituted or unsubstituted aryl group, and Z-series is in a resist film when an acid is generated by light irradiation. Less diffusive. Specifically, the 2-series means having at least one alkyl or alkoxy group selected from branched or cyclic carbons of 8 or more, or having at least two selected from branched, branched, or cyclic carbons. Benzenesulfonic acid, naphthalenesulfonic acid or anthracenesulfonic acid having 4 to 7 alkyl or alkoxy groups, or having at least 3 selected from linear or branched carbons having 1 to 3 alkyl or alkoxy groups Anion. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, for example, the compounds shown below, but the present invention is not limited by these. -35- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 495645-A7 _____B7 V. Description of Invention (Μ) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 0 ~ i + _h0 bf " (PAG3 -1) α-ι + -ο pf6- (PAG3-2) 0 ~ i + _0 asf 「(PAG3-3) *

SbF6" (PAG3-4) -36- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) (請先閱讀背面之注意事項再填寫本頁)SbF6 " (PAG3-4) -36- This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) (Please read the precautions on the back before filling this page)

495645 A7 B7 五、發明說明(β ) 〇zN_ ^-i+-Q N02 CF3S03 (PAG3-5) Q-i+-〇-〇cH3 pFe (PAG3 — 6) ^^-1+ 一〇CH3 SbF6 (PAG3 — 7) pf6' (PAG3-8) N〇2 CF3SO3 (PAG3-9) (請先閱讀背面之注意事項再填寫本頁)495645 A7 B7 V. Description of the invention (β) 〇zN_ ^ -i + -Q N02 CF3S03 (PAG3-5) Q-i + -〇-〇cH3 pFe (PAG3 — 6) ^^-1+ 1〇CH3 SbF6 (PAG3 — 7) pf6 '(PAG3-8) No. 2 CF3SO3 (PAG3-9) (Please read the precautions on the back before filling this page)

H3CH3C

CH3 AsF6. 經濟部智慧財產局員工消費合作社印制衣 (PAG3 -10)CH3 AsF6. Printing of clothing by employees' cooperatives in the Intellectual Property Bureau of the Ministry of Economic Affairs (PAG3 -10)

SbF6_ (PAG3-12)SbF6_ (PAG3-12)

Cl~^:Cl ~ ^:

Cl pf6' (PAG3 -13) 37- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 495645 . A7 - · B7 經濟部智慧財產局員工消費合作社印製 發明說明(w) f3c-〇-i+-v/~cf3 cf3s〇3 (PAG3-14) PF6*Cl pf6 '(PAG3 -13) 37- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 x 297 mm) 495645. A7-· B7 Printed Invention Note by Employee Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs (w) f3c-〇-i + -v / ~ cf3 cf3s〇3 (PAG3-14) PF6 *

Cl pf6Cl pf6

tBu~Y^y—n SbF6 (PAG3-17) i~0~]tBu ~ Y ^ y—n SbF6 (PAG3-17) i ~ 0 ~]

tBu ^\_n、 -tBu (PAG3-18)tBu ^ \ _ n, -tBu (PAG3-18)

Cl (PAG3 - 20) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) PF6* pf6. CF3S〇3. •38— 495645 A7 B7 五、發明說明(W )Cl (PAG3-20) This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) PF6 * pf6. CF3S〇3. • 38— 495645 A7 B7 V. Description of the invention (W)

CF3SO3 0~]CF3SO3 0 ~]

(PAG3 — 22)(PAG3 — 22)

〇CE3 0~ι+Ό〇CE3 0 ~ ι + Ό

o3s-\ /-OC2H5 (PAG3-23) 經濟部智慧財產局員工消費合作社印製 α-o3s- \ / -OC2H5 (PAG3-23) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs α-

*39— (請先閱讀背面之注意事項再填寫本頁)* 39— (Please read the notes on the back before filling this page)

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 - A7 B7 五、發明說明(> (n)HnC5This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 495645-A7 B7 V. Description of the invention (> (n) HnC5

(PAG3-26) 經濟部智慧財產局員工消費合作社印製(PAG3-26) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

(PAG3 — 27) -40- (請先閱讀背面之注意事項再填寫本頁)(PAG3 — 27) -40- (Please read the notes on the back before filling this page)

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 Α7 Β7 五、發明說明(πThis paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 495645 Α7 Β7 V. Description of the invention (π

SS

Q-'-OQ -'- O

O'-O H17Ce O^s〇3· (PAG3-28) H25CirQ-< >-SO, (PAG3-29) H9C< 1h,c4, 1 H,C/ -SO/ (PAG3-30) 0«C|Hi7 Hi7C.-o-^^-so3·(PAG3-31) (請先閱讀背面之注意事項再填寫本頁) C,H9l nHsCr0-^y-S03· (PAG3-32) ^O 门 OC4Hs n He〇r〇《^-s〇3' C>C4Hsn (PAG3-33) 經濟部智慧財產局員工消費合作社印製 ,ch3 H3C—^y-S03 ^CH3 (PAG3-34) -41- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) C^i-hO h9c,O'-O H17Ce O ^ s〇3 · (PAG3-28) H25CirQ- < > -SO, (PAG3-29) H9C < 1h, c4, 1 H, C / -SO / (PAG3-30) 0 «C | Hi7 Hi7C.-o-^^-so3 · (PAG3-31) (Please read the precautions on the back before filling this page) C, H9l nHsCr0- ^ y-S03 · (PAG3-32) ^ O door OC4Hs n He〇r〇 "^ -s〇3 'C > C4Hsn (PAG3-33) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, ch3 H3C— ^ y-S03 ^ CH3 (PAG3-34) -41- present Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) C ^ i-hO h9c,

S〇3 1 h9cv %(PAG3-35) 495645 A7 B7 五、發明說明) ^ H,C. _ 〇*-〇 lH17Ct-0-^^S03* W厂 (PAG3-36) (PAG3-37) OK) 1 Η Γ SO, so/ ri -4 n C/ tHsC^ (PAG3-38) o (PAG3-39) Cl η h3c-o- •och3 'Hn7cr0 經濟部智慧財產局員工消費合作社印製S〇3 1 h9cv% (PAG3-35) 495645 A7 B7 V. Description of the invention ^ H, C. _ 〇 * -〇lH17Ct-0-^^ S03 * W Factory (PAG3-36) (PAG3-37) OK ) 1 Η Γ SO, so / ri -4 n C / tHsC ^ (PAG3-38) o (PAG3-39) Cl η h3c-o- • och3 'Hn7cr0 Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs

(PAG3-40) -42- (請先閱讀背面之注意事項再填寫本頁)(PAG3-40) -42- (Please read the notes on the back before filling this page)

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 / - A7 B7 五、發明說明(w bf4 (PAG4 -1) ot- S· PF6 一 (PAG4-2) •S 十 AsF6· (請先閱讀背面之注意事項再填寫本頁) S 十 CF3S〇3 經濟部智慧財產局員工消費合作社印製 (PAG4-3)This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 495645 /-A7 B7 V. Description of the invention (w bf4 (PAG4 -1) ot- S · PF6 1 (PAG4-2) • S 10 AsF6 · (Please read the notes on the back before filling in this page) S 十 CF3S〇3 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (PAG4-3)

SbF6, (PAG4-4)SbF6, (PAG4-4)

Or (PAG4 - 5) •s+ C8F17S〇3. (PAG4-6) 、OtS. (PAG4-7)Or (PAG4-5) • s + C8F17S〇3. (PAG4-6), OtS. (PAG4-7)

F FF F

本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 495645 A7 B7 五、發明說明(4> )This paper size is applicable to China National Standard (CNS) A4 (210 x 297 mm) 495645 A7 B7 V. Description of the invention (4 >)

H3C-〇-sx - OC2H5J CF3S〇3 (PAG4-8) h3co-^^-sH3C-〇-sx-OC2H5J CF3S〇3 (PAG4-8) h3co-^^-s

Cl lz CF3SC3 (PAG4-9) h〇-\ ch3 (PAG4 -10) ΡΓ6* (請先閱讀背面之注意事項再填寫本頁)Cl lz CF3SC3 (PAG4-9) h〇- \ ch3 (PAG4 -10) ΡΓ6 * (Please read the precautions on the back before filling this page)

SbF6· (PAG4-11)SbF6 · (PAG4-11)

HO BF4 經濟部智慧財產局員工消費合作社印制衣 (PAG4 -12)HO BF4 Printed Clothing for Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (PAG4 -12)

H3co (PAG4 -13) -44- CF3SO3 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(〇 (n)C4Kg H〇- ^ \~ S (n)C4HgH3co (PAG4 -13) -44- CF3SO3 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 V. Description of the invention (〇 (n) C4Kg H〇- ^ \ ~ S ( n) C4Hg

pf6' (PAG4 -14)pf6 '(PAG4 -14)

HO ch3 (PAG4-15) BF4 (請先閱讀背面之注意事項再填寫本頁)HO ch3 (PAG4-15) BF4 (Please read the precautions on the back before filling this page)

pf6pf6

AsFg'AsFg '

經濟部智慧財產局員工消費合作社印製 (PAG4-17)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (PAG4-17)

O8F17SO3O8F17SO3

(PAG4-18) 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) _45_ 495645 A7 B7 五、發明說明(β ) α〇 C-CHZ-S 十-CH3 SbF6-CH3 (PAG4-19) 〇 ^c-ch2-s^] (PAG4-20) pf6 (請先閱讀背面之注意事項再填寫本頁) a 〇c-ch2-s(PAG4-18) This paper size applies to Chinese National Standard (CNS) A4 (210 x 297 mm) _45_ 495645 A7 B7 V. Description of the invention (β) α〇C-CHZ-S 十 -CH3 SbF6-CH3 (PAG4 -19) 〇 ^ c-ch2-s ^] (PAG4-20) pf6 (Please read the precautions on the back before filling this page) a 〇c-ch2-s

AsF6. (PAG4 - 21)AsF6. (PAG4-21)

Cl 〇 II C - CH2 - s·Cl 〇 II C-CH2-s ·

AsF6 (PAG4-22) 〇 經濟部智慧財產局員工消費合作社印製 ^C-CH2-sJJ> (PAG4-23) 〇 I! C-CH2-s (PAG4 — 24) 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) pf6·AsF6 (PAG4-22) 〇 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ C-CH2-sJJ > (PAG4-23) 〇I! C-CH2-s (PAG4 — 24) This paper standard applies Chinese national standards ( CNS) A4 size (210 x 297 mm) pf6 ·

AsFg' —46 · 495645 A7 B7 五、發明說明(β V/ 〇 II 丄 OCH2-S · -(n)C4H9 (n)C4Hg (PAG4-25) PF6AsFg '—46 · 495645 A7 B7 V. Description of the invention (β V / 〇 II 丄 OCH2-S ·-(n) C4H9 (n) C4Hg (PAG4-25) PF6

C8H17SO3 (PAG4 - 26) O^s-O~s'C8H17SO3 (PAG4-26) O ^ s-O ~ s'

SbF6 (請先閱讀背面之注意事項再填寫本頁) (PAG4-27)SbF6 (Please read the notes on the back before filling this page) (PAG4-27)

S 2CF3SO3S 2CF3SO3

S 2AsF6. 經濟部智慧財產局員工消費合作社印製 (PAG4 — 29)S 2AsF6. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (PAG4 — 29)

S03S03

OC2H5 •47- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 495645 A7 B7 五、發明說明(A )OC2H5 • 47- This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) 495645 A7 B7 V. Description of invention (A)

1 2 Η c 一 3 十Η SIC1 2 Η c one 3 Η IC SIC

(PAG4-32)(PAG4-32)

F.F.

FF

f y F Ff y F F

•S.• S.

(PAG4 — 34) 經濟部智慧財產局員工消費合作社印製 _48· (請先閱讀背面之注意事項再填寫本頁)(PAG4 — 34) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs _48 · (Please read the precautions on the back before filling this page)

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 - A7 B7 經濟部智慧財產局員工消費合作社印制衣 五、發明說明(47 ) 〇g H,7C< ^s〇3- H0-Q4: 'η,7ο,.〇η〇^5〇3 (PAG4-35) 0 (PAG4-36)This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495645-A7 B7 Printed clothing by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (47) 〇g H, 7C < ^ s〇 3- H0-Q4: 'η, 7ο, .〇η〇 ^ 5〇3 (PAG4-35) 0 (PAG4-36)

so/ so. o-cah; (~Vs+ HsCr0^yS〇i ό .(PAG4 - 41)so / so. o-cah; (~ Vs + HsCr0 ^ yS〇i ό. (PAG4-41)

OC.H 门OC.H Gate

S03S03

•49. 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) so. (請先閱讀背面之注意事項再填寫本頁)• 49. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) so. (Please read the precautions on the back before filling this page)

495645 A7 B7495645 A7 B7

五、發明說明(W5. Description of the invention (W

SO,SO,

(PAG4-43)(PAG4-43)

OHOH

so n h9ca-o\ }-oc4h9 • 9. 〇-S"0-f 'Hi7C«-〇hQ-SO'0 (PAG4-44) (PAG4-45)so n h9ca-o \} -oc4h9 • 9. 〇-S " 0-f 'Hi7C «-〇hQ-SO'0 (PAG4-44) (PAG4-45)

經濟部智慧財產局員工消費合作社印製 C/ f c2hso^Q-so3· (PAG4-47) -50· (請先閱讀背面之注意事項再填寫本頁)Printed by C / f c2hso ^ Q-so3 · (PAG4-47) -50 · (Please read the precautions on the back before filling this page)

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 ___ 五、發明說明(49 ) 一般式(PAG3)、(PAG4)所示之上述鏺鹽係爲習知物’ 例如有 J.W.Knapczyk et al,J.Am.Chem.Soc.,91,145 (1969) 、 A.L.Maycok et al,J.〇rg.Chem.,35,2532, ( 1 970 ) ' E.Goethas et a 1,Bu11.Soc.Chem. Be 1g. ,73, 546,(1964) " H.M.Leicester. J.Am.Chem.Soc.,51, 3587(1929) 'J.V.Crivello et al.,J.Polym.Chem.,This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 B7 ___ V. Description of the invention (49) The above phosphonium salts shown in the general formulas (PAG3) and (PAG4) are known substances `` For example, JWKnapczyk et al, J. Am. Chem. Soc., 91, 145 (1969), AL Maycok et al, J. Org. Chem., 35, 2532, (1970) '' E. Goethas et a 1, Bu11.Soc.Chem. Be 1g., 73, 546, (1964) " HMLeicester. J. Am. Chem. Soc., 51, 3587 (1929) 'JVCrivello et al., J. Polym .Chem.,

Ed. ,18,2677( 1980 )、美國專利第 2,807,648 號及同 4,247,473號、特開昭53-101,331號等所記載的方法所合 成。 (3 )下述一般式(PAG5 )所示之二楓衍生物或一般式(PAG6 ) 所示之亞胺基磺酸酯衍生物。 -------l·丨丨裝--------訂· (請先閱讀背面之注意事項再填寫本頁)Ed., 18, 2677 (1980), U.S. Patent No. 2,807,648, and the methods described in 4,247,473, JP 53-101,331 and the like. (3) A dimaple derivative represented by the following general formula (PAG5) or an iminosulfonate derivative represented by the general formula (PAG6). ------- l · 丨 丨 Installation -------- Order · (Please read the precautions on the back before filling in this page)

ArJ - S〇2 - S〇2 — Ar (PAG5) 入ArJ-S〇2-S〇2 — Ar (PAG5) input

r206-s〇z-〇-n A (PAG6)r206-s〇z-〇-n A (PAG6)

V 線 經濟部智慧財產局員工消費合作社印製 (其中’ Ar3,Ar4係各表示獨立的經取代或未經取代的 芳基,R2()6係表示經取代或未經取代的烷基、芳基,A係 表示經取代或未取代的伸烷基、伸烯基、伸芳基) 具體例如下述之化合物,惟本發明不受此等所限制。 -51- 本紙張尺度適用中國國豕標準(CNS)A4規格(210 X 297公爱) 495645 A7 B7 五、發明說明(θ )Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (where 'Ar3, Ar4 each represents an independent substituted or unsubstituted aryl group, and R2 () 6 represents a substituted or unsubstituted alkyl group, aromatic group (A is a substituted or unsubstituted alkylene, alkenyl, or arylene). Specific examples include the following compounds, but the present invention is not limited thereto. -51- This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) 495645 A7 B7 V. Description of the invention (θ)

Cl -〇-S〇2-S02-Q- (PAG5 -1)Cl -〇-S〇2-S02-Q- (PAG5 -1)

Cl H3C-^^-S〇2-S02-^^ CH3 (PAG5-2) -^-S02 一 so2^^^-och3 (PAG5 - 3) H3C"^^^S02-S02-^^"C1 (PAG5-4) F3C-^^S〇2-S02H^k CF3Cl H3C-^^-S〇2-S02-^^ CH3 (PAG5-2)-^-S02 a so2 ^^^-och3 (PAG5-3) H3C " ^^^ S02-S02-^^ " C1 (PAG5-4) F3C-^^ S〇2-S02H ^ k CF3

H3CO (PAG5 - 5) (請先閱讀背面之注意事項再填寫本頁)H3CO (PAG5-5) (Please read the notes on the back before filling this page)

S〇2~*S〇2S〇2 ~ * S〇2

Cl 經濟部智慧財產局員工消費合作社印製 H5C2〇Cl Printed by Employee Consumer Cooperative of Intellectual Property Bureau of Ministry of Economy H5C2〇

S〇2-S〇2 (PAG5-7) (PAG5-6) 〇S〇2-S〇2 (PAG5-7) (PAG5-6)

Cl S0 2 - S02 (PAG5 - 8)Cl S0 2-S02 (PAG5-8)

Cl -52- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 495645 A7 B7 五 一丨· 經濟部智慧財產局員工消費合作社印製 發明說明(ΜCl-52- This paper size is in accordance with China National Standard (CNS) A4 (210 x 297 mm) 495645 A7 B7 May 1 丨 · Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

ClCl

S〇2~S02-^ /Γ^Η3 (PAG5-9) S〇2-S〇2 〇CH3 (PAG5-10)S〇2 ~ S02- ^ / Γ ^ Η3 (PAG5-9) S〇2-S〇2 〇CH3 (PAG5-10)

Cl 乂少"SO? - S〇2Cl 乂 少 " SO?-S〇2

och3 (PAG5-11) H$>〇S〇2-S〇2 h3coch3 (PAG5-11) H $ > 〇S〇2-S〇2 h3c

(PAG5 -12) (請先閱讀背面之注意事項再填寫本頁)(PAG5 -12) (Please read the notes on the back before filling this page)

F FF F

F FF F

S〇2 - S〇2 —、IrY F F F F (PAG5-13)S〇2-S〇2 —, IrY F F F F (PAG5-13)

s〇2-s〇2— (PAG5 -14) -53- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(s〇2-s〇2— (PAG5 -14) -53- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 V. Description of the invention (

0 N 一 0 — 〇 (PAG6-1) 00 N one 0 — 〇 (PAG6-1) 0

CH3 0^/ 一 0-S〇r^^OCH3 0 (PAG6 - 3) 0CH3 0 ^ / 1 0-S〇r ^^ OCH3 0 (PAG6-3) 0

^N-0-S〇2-^^CF3 〇 (PAG6-4) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印刺衣 0^ N-0-S〇2-^^ CF3 〇 (PAG6-4) (Please read the precautions on the back before filling out this page) The Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Consumption Cooperative, printed sashimi 0

〇CH3· .54· 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)〇CH3 · .54 · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

495645 - A7 B7 五、發明說明(θ 一〇一S〇2 — CgHs 0 (PAG6-7) n~o-so2-^^ 〇 (PAG6-8) N-0-S〇2-^^ 〇 (PAG6 - 9) (請先閱讀背面之注意事項再填寫本頁)495645-A7 B7 V. Description of the invention (θ-101-S02-CgHs 0 (PAG6-7) n ~ o-so2-^^ 〇 (PAG6-8) N-0-S〇2-^^ 〇 ( PAG6-9) (Please read the notes on the back before filling this page)

(PAG6-10) 經濟部智慧財產局員工消費合作社印製(PAG6-10) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

(PAG6 -12) -55- 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) ^^0045 A7 B7 五、 發明說明(54(PAG6 -12) -55- This paper size is applicable to Chinese National Standard (CNS) A4 (210 x 297 mm) ^^ 0045 A7 B7 V. Description of the invention (54

FF

裝--- (請先閱讀背面之注意事項再填寫本頁) 於本發明中(b )藉由活性光線或放射線產生酸之化合物係 以鏺鹽、二碾、4位DNQ(二疊氮萘醌)磺酸酯、三嗪化合 物較佳,更佳者爲至少一個鏺鹽。 此等之(b )藉由活性光線或放射線產生酸之化合物的添 加量以本發明之正型光阻組成物之全部重量(除塗覆溶劑 外)爲基準,通常爲0.001〜40重量%、較佳者爲0.01〜20 重量%、更佳者爲0 _ 1〜5重量%。藉由活性光線或照射線 照射而分解以產生酸之化合物的添加量若小於〇 . 〇 〇 1重 量%時感度低,而若大於40重量%時阻體之光吸收過高、 外型不佳或工程(尤其是烘烤)範圍過小故不爲企求。 -線· 經濟部智慧財產局員工消費合作社印製 -56- 495645 A7 五、發明說明(55) 本發明之組成物中可使用有機鹼性化合物。藉此由於 保存時之安定性提高及藉由pED之線幅變化少,故不爲 企求。 本發明所使用較佳的有機鹼性化合物係爲比苯酚具更 強驗性的化合物。其中,以含氮鹼性化合物較佳。較佳 的化學環境例如有下述式(A)〜(E)構造。 R251 R250—N—R252 .(A) (其中’ R25Q、R251& R252可爲相同或不同的碳原子、碳數i 〜6之院基、碳數1〜6之胺基烷基、碳數1〜6之羥基或碳 數6〜20之經取代或未取代之芳基,且R25i與R2 5 2可互相 鍵結形成環) (請先閱讀背面之注意事項再填寫本頁) •N—C=N· N=C-=U- "(B) "(C) •(D) 經濟部智慧財產局員工消費合作社印製 R254 R255 R253一…(E) I I 上述式(E)中R253、R254、R255及R256可爲相同或不同的碳 數1〜6之烷基,。 另外,較佳的化合物係爲一分子中具有2個以上不同 化學環境之氮原子的含氮鹼性化合物,更佳者爲含有含 -57- 紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645Packing --- (Please read the precautions on the back before filling this page) In the present invention (b) Compounds that generate acid by active light or radiation are sulfonium salt, second mill, and 4-position DNQ (diazide naphthalene Quinone) sulfonate and triazine compounds are preferred, and at least one sulfonium salt is more preferred. The addition amount of these (b) compounds that generate acid by active light or radiation is based on the total weight of the positive photoresist composition of the present invention (except for the coating solvent), which is usually 0.001 to 40% by weight, It is preferably 0.01 to 20% by weight, and more preferably 0 to 1 to 5% by weight. If the amount of the compound that is decomposed to generate an acid by irradiation with active light or radiation is less than 0.01% by weight, the sensitivity is low, and if it is more than 40% by weight, the light absorption of the resist is too high and the appearance is not good. Or the scope of the project (especially baking) is too small to be desirable. -Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy -56- 495645 A7 V. Description of the invention (55) Organic basic compounds can be used in the composition of the present invention. Therefore, it is not desirable because the stability during storage is improved and the change in the line width by pED is small. The preferred organic basic compounds used in the present invention are compounds which are more sensitive than phenol. Among them, a nitrogen-containing basic compound is preferred. A preferable chemical environment has, for example, the following formulae (A) to (E). R251 R250-N-R252. (A) (wherein 'R25Q, R251 & R252 may be the same or different carbon atoms, a carbon number of i ~ 6, an amino group of carbon number 1 ~ 6, a carbon number of 1 Hydroxy group of ~ 6 or substituted or unsubstituted aryl group of 6 to 20 carbon atoms, and R25i and R2 5 2 can be bonded to each other to form a ring) (Please read the precautions on the back before filling this page) • N—C = N · N = C- = U- " (B) " (C) • (D) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs R254 R255 R253 I ... (E) II R253 in the above formula (E) , R254, R255 and R256 may be the same or different alkyl groups having 1 to 6 carbon atoms. In addition, the preferred compound is a nitrogen-containing basic compound having two or more nitrogen atoms in different chemical environments in one molecule, and the more preferred is a compound containing -57- paper. Applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 495645

A7 五、發明說明(56) 經取代或未取代的胺基與氮原子之環構造兩種化合物或 具有烷基胺基之化合物。較佳的具體例如經取代或未取 代的胍、經取代或未取代的胺基吡啶、經取代或未取代 的胺基烷基吡啶、經取代或未取代的胺基吡咯烷、經取 代或未取代的咪唑、經取代或未取代的吡唑、經取代或 未取代的吡嗪、經取代或未取代的嘧啶、經取代或未取 代的嘌呤、經取代或未取代的咪唑啉、經取代或未取代 的吡唑啉、經取代或未取代的哌啶、經取代或未取代的 嗎啉、經取代或未取代的胺基嗎啉等。較佳之取代基有 胺基、胺基烷基、烷基胺基、胺基芳基、芳基胺基、院 基、烷氧基、醯基、醯氧基、芳基、芳氧基、硝基、經 基、氰基。更佳的化合物例如有二甲基胍、1,1,3,3 -四 甲基胍、2-胺基吡啶、3-胺基吡啶、4-胺基吡啶、2-甲 基胺基吡啶、4-二甲基胺基吡啶、2-二乙基胺基吡啶、 2 -(胺基甲基)吡啶、2 -胺基-3 -甲基吡啶、2 -胺基-4 _甲 基吡啶、2-胺基-5-甲基吡啶、2-胺基-6-甲基吡啶、3-胺基乙基吡啶、3-胺基乙基吡啶、3-胺基吡咯烷、哌嗪 、N-( 2-胺基乙基)哌嗪、N-( 2·胺基乙基)哌啶、4-胺基 -2,2,6,6 -四甲基哌啶、4 -吡喃基哌啶、2 ·亞胺基哌啶、 1-(2-胺基乙基)吡咯烷、吡唑、3-胺基-5-甲基吡唑、 5-胺基-3-甲基-1-對-三吡唑、吡嗪、2-(胺基甲基)-5-甲基吡嗪、嘧啶、2,4 -二胺基嘧啶、4,6 -二羥基嘧啶、 2 _吡唑啉、3 -吡唑啉、N _胺基嗎啉、N - ( 2 -胺基乙基)嗎 啉等,惟不受此等所限制。 -58- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)A7 V. Description of the invention (56) The substituted or unsubstituted amine group and the nitrogen atom constitute two kinds of compounds or compounds having an alkylamine group. Preferred examples are, for example, substituted or unsubstituted guanidine, substituted or unsubstituted aminopyridine, substituted or unsubstituted aminoalkylpyridine, substituted or unsubstituted aminopyrrolidine, substituted or unsubstituted Substituted imidazole, substituted or unsubstituted pyrazole, substituted or unsubstituted pyrazine, substituted or unsubstituted pyrimidine, substituted or unsubstituted purine, substituted or unsubstituted imidazoline, substituted or Unsubstituted pyrazoline, substituted or unsubstituted piperidine, substituted or unsubstituted morpholine, substituted or unsubstituted aminomorpholine, and the like. Preferred substituents are amine, amine alkyl, alkyl amine, amine aryl, aryl amine, alkyl, alkoxy, fluorenyl, fluorenyl, aryl, aryloxy, nitrate Radical, meridian, cyano. More preferred compounds are, for example, dimethylguanidine, 1,1,3,3-tetramethylguanidine, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2-methylaminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine, 2- (aminomethyl) pyridine, 2-amino-3 -methylpyridine, 2-amino-4_methylpyridine, 2-amino-5-methylpyridine, 2-amino-6-methylpyridine, 3-aminoethylpyridine, 3-aminoethylpyridine, 3-aminopyrrolidine, piperazine, N- (2-aminoethyl) piperazine, N- (2-aminoethyl) piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4-pyranylpiperidine 2, iminopiperidine, 1- (2-aminoethyl) pyrrolidine, pyrazole, 3-amino-5-methylpyrazole, 5-amino-3-methyl-1-pair -Tripyrazole, pyrazine, 2- (aminomethyl) -5-methylpyrazine, pyrimidine, 2,4-diaminopyrimidine, 4,6-dihydroxypyrimidine, 2-pyrazoline, 3 -Pyrazoline, N-aminomorpholine, N- (2-aminoethyl) morpholine, etc., but not limited thereto. -58- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

經濟部智慧財產局員工消費合作社印製 495645 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(57) 此等之含氮鹼性化合物可單獨使用或2種以i:組合使 用。含氮鹼性化合物之使用量對100重量份感光性樹脂 組成物(除溶劑外)而言通常爲0.001〜1 〇重量份、較佳 者爲0.01〜5重量份。若小於0.001重量份時無法得到上 述之效果。另外,大於1 0重量份時會有感度降低且非曝 光部之顯像性惡化的傾向。 本發明之化學增幅型正型光阻劑組成物視其所需另可 含有界面活性劑、染料、顏料、可塑劑、光增感劑及對 顯像液而言促進溶解性之具有2個以上苯酚性OH基的化 合物等。 適合的界面活性劑之具體例如聚環氧乙烷月桂醚、聚 環氧乙烷硬脂醚、聚環氧乙烷十六烷醚、聚環氧乙烷油 醚等之聚環氧乙烷烷醚類,聚環氧乙烷辛基苯酚醚、聚 環氧乙烷壬基苯酚醚等之聚環氧乙烷烷基芳醚類、聚環 氧乙烷·聚環氧丙醚嵌段共聚物類,山梨糖醇單月桂酸 酯、山梨糖醇單棕櫚酸酯、山梨糖醇單硬脂酸酯、山梨 糖醇單油酸酯、山梨糖醇三油酸酯、山梨糖醇單硬脂酸 酯等之山梨糖醇脂肪酸酯類、聚環氧乙烷山梨糖醇單月 桂酸酯、聚環氧乙烷山梨糖醇單棕櫚酸酯、聚環氧乙烷 山梨糖醇單硬脂酸酯、聚環氧乙烷山梨糖醇三油酸酯、 聚環氧乙烷山梨糖醇三硬脂酸酯等之聚環氧山梨糖醇脂 肪酸酯類等之非離子型界面活性劑,耶部頓普(譯音) EF301、EF303、EF3 52 (新秋田化成(股)製)、梅卡法克 (譯音)F171、F173(大日本油墨(股)製)、夫羅拉頓FC430 -59- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) '~ --裝·-- (請先閱讀背面之注意事項再填寫本頁) . 495645 A7 B7 五、發明說明(58) 、FC431(住友史理耶姆(譯音)(股)製)、朝日卡頓(譯音) AG710、紗夫龍 S- 382、SC101、SC102、SC103、SC104、 --裝--- (請先閱讀背面之注意事項再填寫本頁) SC105、SC106(旭硝子(股)製)等之氟系界面活性劑、有 基矽氧烷聚合物KP341(信越化學二業(股)製)或丙烯酸 系或甲基丙烯酸系(共)聚合聚夫羅No .75, No· 95 (共榮社 油脂化學工業(股)製)等。 此等之界面活性劑可單獨添加,或可幾種組合使用。 較佳的添加量對100重量份組成物(除溶劑外)而言爲 0.0005〜0.01重量份。 線· 適合的染料有油性染料及鹼性染料。具體而言例如有 油黃# 101、油黃# 103、油粉紅# 312、油綠BG、油藍 B0S、油藍# 603、油黑BY、油黑BS、油黑T- 505 (以上爲 歐里恩頓化學股份有限公司)、結晶紫(CI 42555 )、甲基 紫(CI42535 )、鹼性芯香紅B(CI45170B)、孔雀綠 (CI42000)、亞甲基藍(CI 5201 5 )等。 另外,藉由添加下述之分光增感劑,且不吸收所使用 的光酸發生劑、藉由紫外線在長波長範圍內予以增感, 經濟部智慧財產局員工消費合作社印製 可使本發明之化學增幅型正型阻體對i或g線具有感度。 適合的分光增感劑之具體例如二苯甲酮、P,P ·-四甲基 胺基二苯甲酮、p,p’-四乙基乙基胺基二苯甲酮、2-氯 化噻噸酮、萬酮、9 -乙氧基萬、萬、苑、菲、吩噻嗪、 苯甲基、吖啶橘、苯并黃素、乙醯黃素-T、9, 10-二苯基 蒽、9-芴、苯乙酮、菲、芴、對苯醌、2-氯-4-硝基苯胺 、N-乙醯基-對-硝基苯胺、對·硝基苯胺、N-乙醯基-4- -60- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ^645 經濟部智慧財產局員工消費合作社印製 A7 :一 —________五、發明說明(59) 硝基-1-萘胺、苦味胺、蒽醌、2-乙基蒽醌、2-第3-丁基 1:醌、1,2 -苯并蒽醌、3 -甲基-1,3 -二偶氮-1,9 -苯并蒽 酮、二苯基丙酮、丨,2-萘醌、3,3,-碳基-雙(5,7-二甲氧 基碳基香豆素)及六苯并苯等,惟不受此等所限制。 對顯像液而言促進溶解性之具有2個以上苯酚性羥基的 化合物例如有聚羥基化合物,較佳的聚羥基化合物例如 有苯酚、間苯二酚、氟化葡萄酸、氟化糖精、2,3,4 -三 羥基二苯甲酮、2,3,4,4;-四羥基二苯甲酮、α,α,, α” -參(4-羥基苯基)-1,3,5-三異丙基苯、參(4-羥基 苯基)甲烷、參(4-羥基苯基)乙烷、1,1’-雙(4_羥基苯 基)環己烷。 本發明之化學增幅型正型光阻劑組成物係爲使上述各 成分溶解於(d)溶劑中、塗覆於載體上者,可使用的溶 劑係以二氯化乙烯、環己酮、環物酮、2-庚酮、r -丁 內酯、甲基乙酮、乙二醇單甲酮、乙二醇單乙醚、2 -甲 氧基乙基乙酸酯、乙二醇單乙醚乙酸酯、丙二醇單甲醚 、丙二醇單甲醚乙酸酯、甲苯、醋酸乙酯、乳酸甲酯、 乳酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯、丙酮酸 甲酯、丙酮酸乙酯、丙酮酸丙酯、N,N-二甲基甲醯胺、 二甲基亞楓、N-甲基吡咯烷酮、四氫呋喃等較佳,此等 可單獨使用或混合使用。 本發明之化學增幅型正型光阻劑組成物係如在製造精 密電子積體電路時所使用的基板(例如矽/二氧化矽被覆) 上藉由旋轉器、塗覆器等適當的塗覆方法予以塗覆後, -61-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 495645 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (57) These nitrogen-containing basic compounds can be used alone or in combination of two: i :. The amount of the nitrogen-containing basic compound to be used is usually 0.001 to 10 parts by weight, preferably 0.01 to 5 parts by weight, for 100 parts by weight of the photosensitive resin composition (excluding the solvent). If it is less than 0.001 parts by weight, the above effects cannot be obtained. In addition, if it is more than 10 parts by weight, the sensitivity tends to decrease and the developability of the non-exposed portion tends to deteriorate. The chemically amplified positive photoresist composition of the present invention may further contain a surfactant, a dye, a pigment, a plasticizer, a photosensitizer, and two or more of the solubility-enhancing properties of the developing solution as required. Compounds such as phenolic OH groups. Specific examples of suitable surfactants include polyethylene oxide alkylene oxide, polyethylene oxide stearyl ether, polyethylene oxide hexadecyl ether, polyethylene oxide oleyl ether, and the like. Ethers, polyethylene oxide alkyl aryl ethers, such as polyethylene oxide octyl phenol ether, polyethylene oxide nonyl phenol ether, polyethylene oxide · polypropylene oxide block copolymers Class, sorbitol monolaurate, sorbitol monopalmitate, sorbitol monostearate, sorbitol monooleate, sorbitol trioleate, sorbitol monostearate Esters such as sorbitol fatty acid esters, polyethylene oxide sorbitol monolaurate, polyethylene oxide sorbitol monopalmitate, polyethylene oxide sorbitol monostearate, Non-ionic surfactants such as polyethylene oxide sorbitol trioleate, polyethylene oxide sorbitol tristearate, and other polyepoxide sorbitol fatty acid esters, Yebu Dunpu (Transliteration) EF301, EF303, EF3 52 (made by Shin Akita Kasei Co., Ltd.), Mekafak (transliterated) F171, F173 (made by Dainippon Ink Co., Ltd.), husband Rollaton FC430 -59- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) '~ --Packing ... (Please read the precautions on the back before filling this page). 495645 A7 B7 V. Description of the invention (58), FC431 (Sumitomo Shrimiya (transliteration) (share) system), Asahi Carton (transliteration) AG710, Safron S-382, SC101, SC102, SC103, SC104,-equipment --- (Please read the precautions on the back before filling out this page) Fluorine surfactants such as SC105, SC106 (made by Asahi Glass), KP341 (based on Shin-Etsu Chemical Co., Ltd.) Made) or acrylic or methacrylic (co) polymerized poly-Fro No. 75, No. 95 (made by Kyoeisha Oil Chemical Industry Co., Ltd.) and so on. These surfactants may be added singly or in combination. The preferred addition amount is 0.0005 to 0.01 parts by weight for 100 parts by weight of the composition (excluding the solvent). Line · Suitable dyes are oily dyes and basic dyes. Specific examples are oil yellow # 101, oil yellow # 103, oil pink # 312, oil green BG, oil blue B0S, oil blue # 603, oil black BY, oil black BS, oil black T-505 (the above is Eury Enton Chemical Co., Ltd.), Crystal Violet (CI 42555), Methyl Violet (CI42535), Basic Core Red B (CI45170B), Malachite Green (CI42000), Methylene Blue (CI 5201 5), etc. In addition, by adding the following spectroscopic sensitizer, and not absorbing the photoacid generator used, and sensitizing it by ultraviolet rays in a long wavelength range, the invention can be printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs The chemically-amplified positive-type resistor has sensitivity to the i or g line. Specific examples of suitable spectral sensitizers include benzophenone, P, P · -tetramethylaminobenzophenone, p, p'-tetraethylethylaminobenzophenone, 2-chloride Thioxanthone, ketanone, 9-ethoxyl, 10,000, yuan, phenanthrene, phenothiazine, benzyl, acridine tangerine, benzoflavin, acetoflavin-T, 9, 10-diphenyl Anthracene, 9-fluoren, acetophenone, phenanthrene, pyrene, p-benzoquinone, 2-chloro-4-nitroaniline, N-ethylfluorenyl-p-nitroaniline, p-nitroaniline, N-ethyl醯 基 -4- -60- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ^ 645 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7: I —________ V. Description of the invention ( 59) nitro-1-naphthylamine, bitter amine, anthraquinone, 2-ethylanthraquinone, 2-third 3-butyl 1: quinone, 1,2-benzoanthraquinone, 3-methyl-1, 3-diazo-1,9-benzoxanthone, diphenylacetone, 1,2, naphthoquinone, 3,3, -carbon-bis (5,7-dimethoxycarbon coumarin ) And hexabenzobenzene, etc., but not limited by these. Examples of compounds having two or more phenolic hydroxyl groups that promote solubility in a developing solution include polyhydroxy compounds, and preferred polyhydroxy compounds include phenol, resorcinol, fluorinated grape acid, fluorinated saccharin, 2 ,, 3,4-trihydroxybenzophenone, 2,3,4,4; -tetrahydroxybenzophenone, α, α ,, α ”-Shen (4-hydroxyphenyl) -1,3,5 -Triisopropylbenzene, ginseng (4-hydroxyphenyl) methane, ginseng (4-hydroxyphenyl) ethane, 1,1'-bis (4-hydroxyphenyl) cyclohexane. Chemical Amplification of the Invention Type positive photoresist compositions are those in which the above components are dissolved in a solvent (d) and coated on a carrier. The solvents that can be used are ethylene dichloride, cyclohexanone, cyclone ketone, 2- Heptone, r-butyrolactone, methyl ethyl ketone, ethylene glycol monomethyl ketone, ethylene glycol monoethyl ether, 2-methoxyethyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl Ether, propylene glycol monomethyl ether acetate, toluene, ethyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate, Propyl pyruvate , N, N-dimethylformamide, dimethylmethylene maple, N-methylpyrrolidone, tetrahydrofuran, etc. are preferred, and these can be used alone or in combination. The chemically amplified positive photoresist composition of the present invention The object is coated on the substrate (such as silicon / silicon dioxide coating) used in the manufacture of precision electronic integrated circuits by a suitable coating method such as a spinner or a coater, -61-

-1— I ϋ I --------·——η-裝------ (請先閱讀背面之注意事項再填寫本頁)-1— I ϋ I -------- · ——η- 装 ------ (Please read the precautions on the back before filling this page)

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ^5645 A7 B7___ 1、發明說明(60 ) 通過所定的光罩予以曝光,且進行烘烤予以顯像,製得 良好的光阻圖樣。 --裝--- (請先閱讀背面之注意事項再填寫本頁) 本發明之化學增幅型正型光阻劑組成物之顯像液例如 有氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、磷酸鈉、甲 基矽酸鈉、銨水等之無機鹼類、乙胺、正-丙胺等之一 級胺類、二乙胺、二-正-丁胺等二級胺類、三乙胺、甲 基二乙胺等三級胺類、二甲基乙醇胺、三乙醇胺等醇胺 類、甲醯胺或乙醯胺等醯胺類、四甲銨氫氧化物、三甲 基(2-羥基乙基)銨氫氧化物、四乙銨氫氧化物、三丁甲 基銨氫氧化物、四乙醇銨氫氧化物、甲基乙醇銨氫氧化物 、苯甲基甲基二乙醇銨氫氧化物、苯甲基二甲基乙醇銨 氫氧化物、苯甲基三乙醇銨氫氧化物、四丙銨氫氧化物 、四丁銨氫氧化物等之四基銨鹽、吡咯:吡啶等之環狀銨 等的鹼類水溶液等。 .線· [實施例] 於下述中係爲合成例、實施例及比較例,惟本發明不 受下述實施例所限制。 合成例1[共聚物(R-1)之合成] 經濟部智慧財產局員工消費合作社印製 使32.4g (0.2莫耳)對乙醯氧基苯乙醯及3· 48g (0.015 莫耳)四環[6.2.1. 13,6.02,7]十二烷基-4-丙烯酸酯溶解 於120ml醋酸丁酯中,在氮氣氣流中且攪拌下,於80°C 中使0.033g偶氮雙異丁烯腈(AIBN)在2.5小時內添加3次 ,最後另外繼續攪拌5小時,以進行聚合反應。使反應 液投入1 200ml己烷,且使白色樹脂結晶。使所得的樹脂 -62- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 哪645 A7 B7 五、發明說明(61 ) i裝--- (請先閱讀背面之注意事項再填寫本頁) 乾燥後,溶解150ml甲醇。於其中添加7. 7g(0· 19莫耳) 氫氧化鈉/ 50ml水之水溶液,加熱回流3小時予以加水分 解。然後,加入200ml水予以稀釋,以鹽酸中和以使白 色樹脂結晶。使該樹脂過濾且水洗、乾燥。另外,溶解 於200ml四氫呋喃、且於5L超純水中激烈攪拌以進行滴 下、再沉澱。重複再沈澱操作3次。 使所得的樹脂在真空乾燥器中、120t下乾燥12小時 ,製得聚(對羥基苯乙烯/四環十二烷基丙烯酸酯)共聚 物(R · 1 )。 所得的樹脂之重量平均分子量(藉由GPC法所測定的聚 苯乙烯環算値)爲10,000。 合成例a-2[共聚物(R-2)之合成] -丨線 於合成例&-1中使用4.632( 0.022莫耳)二環[4.4.0]癸 基-3-丙烯酸取代四環[6.2.1.13’6.02,7]十二烷基-4-丙烯酸外,同樣地製得(對羥基苯乙烯/二環癸基丙烯酸 酯)共聚物(R-2)。所得的樹脂之重量平均分子量爲 12,000 。 合成例a - 3〜a - 5 經濟部智慧財產局員工消費合作社印製 與合成例a -1〜a _ 2相同地,共聚物單聚物及添加量變 更如表1所示以合成共聚物。 -63· 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 __B7 五、發明說明(62) 表1共聚物(R-1)〜(R-5)之合成 表 1 合成例 樹脂號碼 聚合物構造 組成比 x:y:z 重量平均 分子量 a — 1 R- 1 1 9 3:7 1 0, 0 0 0 a — 2 R-2 Q °CO 9 0:10 12,000 a — 3 R- 3 8 0:20 13,000 a — 4 R— 4 ^ & 8 5:15 1 1 , 0 0 0 a — 5 R— 5 80:10:10 8,000 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 合成例b-l [酸分解性聚合物(B-1)之合成] 使20g樹脂(R-1)溶解於l〇〇g丙二醇甲醚乙酸酯(PGMEA) 中,使該溶液在60°C、20mmHg下減壓,使約20g之溶劑 與殘存於系中之水共同餾去。冷卻至20°C,添加使2.91 g ( 0.0291莫耳)第3-丁基乙烯醚及0.05g對-甲苯磺酸吡啶 -64- 本紙張尺度適财關家標準(CNS)A4規格(210 X 297公爱) 五、發明說明(63) (請先閱讀背面之注意事項再填寫本頁) 鹽溶解於3.67g(0.0291莫耳)環己二醇之溶液。在20°C下 繼續攪拌2小時後,添加〇 . 〇4g三乙胺以停止反應。在反 應混合物中加入100ml醋酸乙酯,另加入50ml水及3m 1丙 酮以進行萃取操作。重複水洗萃取操作3次後,除去在 60°C、20mmHg下進行餾出系中之水分。使該溶液之濃度 以PGMEA調製成20% (樹脂(B-1))。 合成例b-2[酸分解性聚合物(B-2)之合成] 使20g樹脂(R-2)溶解於l〇〇g PGMEA中,使該溶液在 60°C、20mmHg下減壓,使約20g之溶劑與殘存於系中之 水共同餾去。冷卻至20°C,添加2.5 2g( 0.0349莫耳)乙 基乙烯醚及0.05g對-甲苯磺酸吡啶鹽。在20°C下繼續攪 拌2小時後,添加0.04g三乙胺以停止反應。在反應混合 物中加入1 〇〇ml醋酸乙酯,另加入50ml水及3ml丙酮以進 行萃取操作。重複水洗萃取操作3次後,除去在60°C、 20mmHg下進行館出系中之水分。使該溶液之濃度以PGMEA 調製成20% (樹脂(B-2))。 合成例b - 3 [酸分解性聚合物(B- 3 )之合成] 經濟部智慧財產局員工消費合作社印製 使20g樹脂(R-3)溶解於100g PGMEA中,使該溶液在 60°C、20mmHg下減壓,使約20g之溶劑與殘存於系中之 水共同餾去。冷卻至2(TC,添加使5.93g( 0.023 3莫耳) 4-乙烯氧化乙基-4-(第3-丁基)環己烷吡啶鹽。在20°C 下繼續攪拌2小時後,添加0.04g三乙胺以停止反應。在 反應混合物中加入100ml醋酸乙酯,另加入50ml水及3ml 丙酮以進行萃取操作。重複水洗萃取操作3次後,除去在 -65- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 奶5645 A7 B7 I、發明說明(64) 60°C、 20mmHg下進行餾出系中之水分。使該溶液之濃 度以PGMEA調製成20% (樹脂(B-3))。 -I · I I (請先閱讀背面之注意事項再填寫本頁) 合成例b-4[酸分解性聚合物(B-4)之合成] 使20g樹脂(R-4)溶解於100g PGMEA中,使該溶液在 60°C、20mmHg下減壓,使約20g之溶劑與殘存於系中之 水共同餾去。冷卻至20°C,添加使3· 84g( 0.0383莫耳) 第3-丁基乙烯醚及0.05g對-甲苯磺酸吡啶鹽溶解於4.1 4g ( 0.0383莫耳)戊醇之溶液。 在20°C下繼續攪拌2小時後,添加0.04g三乙胺以停止 反應。在反應混合物中加入100ml醋酸乙酯,另加入50ml 水及3ml丙酮以進行萃取操作。重複水洗萃取操作3次後 ,除去在60°C、20mmHg下進行餾出系中之水分。使該溶 液之濃度以PGMEA調製成20% (樹脂(B-4))。 合成例b - 5 [酸分解性聚合物(B- 5 )之合成] |線· 使20g樹脂(R-5)溶解於100g PGMEA中,使該溶液在 60°C、20mmHg下減壓,使約20g之溶劑與殘存於系中之 水共同餾去。冷卻至20°C,添加使4.63g( 0.0463莫耳) 經濟部智慧財產局員工消費合作社印製 異丁基乙烯醚及0.05g對甲苯磺酸吡啶鹽。在20°C下繼 續攪拌2小時後,添加0.04g三乙胺以停止反應。在反應 混合物中加入100ml醋酸乙酯,另加入50ml水及3ml丙酮 以進行萃取操作。重複水洗萃取操作3次後,除去在60°C 、20mmHg下進行餾出系中之水分。使該溶液之濃度以 PGMEA 調製成 20% (樹脂(B-5))。 所合成的酸分解性聚合物之一覽表如表2所示。 -66- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 五、發明說明(65) 表2本發明之酸分解性聚合物This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^ 5645 A7 B7___ 1. Description of the invention (60) Exposure through a predetermined photomask, and baking and development, making a good Photoresist pattern. --Pack --- (Please read the precautions on the back before filling this page) The imaging solution of the chemically amplified positive photoresist composition of the present invention includes, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, silicon Inorganic bases such as sodium, sodium phosphate, sodium methyl silicate, ammonium water, primary amines such as ethylamine, n-propylamine, secondary amines such as diethylamine, di-n-butylamine, triethyl Tertiary amines such as amines, methyldiethylamine, alcohol amines such as dimethylethanolamine, triethanolamine, amines such as formamidine or acetamide, tetramethylammonium hydroxide, trimethyl (2- Hydroxyethyl) ammonium hydroxide, tetraethylammonium hydroxide, tributylmethylammonium hydroxide, tetraethanolammonium hydroxide, methylethanolammonium hydroxide, benzylmethyldiethanolammonium hydroxide, Tetraylammonium salts such as benzyldimethylethanolammonium hydroxide, benzyltriethanolammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and cyclic ammonium such as pyrrole and pyridine And other alkaline aqueous solutions. Lines [Examples] In the following, examples are synthesis examples, examples, and comparative examples, but the present invention is not limited by the following examples. Synthesis Example 1 [Synthesis of Copolymer (R-1)] Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 32.4 g (0.2 mol) of p-acetoxyphenylethyl hydrazone and 3.48 g (0.015 mol) of four Cyclic [6.2.1. 13,6.02, 7] dodecyl-4-acrylate was dissolved in 120 ml of butyl acetate, and 0.033 g of azobisisobutenenitrile was made at 80 ° C under stirring in a nitrogen gas stream. (AIBN) was added 3 times in 2.5 hours, and finally stirring was continued for another 5 hours to carry out the polymerization reaction. The reaction solution was poured into 1,200 ml of hexane, and a white resin was crystallized. Make the obtained resin-62- this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) which is 645 A7 B7 V. Description of the invention (61) i Pack --- (Please read the precautions on the back first Fill out this page again) After drying, dissolve 150 ml of methanol. An aqueous solution of 7.7 g (0.19 mol) of sodium hydroxide / 50 ml of water was added thereto, and the mixture was heated to reflux for 3 hours to hydrolyze. Then, it was diluted by adding 200 ml of water, and neutralized with hydrochloric acid to crystallize the white resin. The resin was filtered, washed with water, and dried. In addition, it was dissolved in 200 ml of tetrahydrofuran and vigorously stirred in 5 L of ultrapure water to perform dropping and reprecipitation. The reprecipitation operation was repeated 3 times. The obtained resin was dried in a vacuum dryer at 120 t for 12 hours to prepare a poly (p-hydroxystyrene / tetracyclododecyl acrylate) copolymer (R · 1). The weight average molecular weight of the obtained resin (polystyrene ring counted by GPC method) was 10,000. Synthesis Example a-2 [Synthesis of Copolymer (R-2)]-丨 In the Synthesis Example & -1, 4.632 (0.022 mol) bicyclic [4.4.0] decyl-3-acrylic acid was used instead of tetracyclic [6.2.1.13'6.02,7] Except dodecyl-4-acrylic acid, a (p-hydroxystyrene / bicyclodecyl acrylate) copolymer (R-2) was prepared in the same manner. The obtained resin had a weight average molecular weight of 12,000. Synthesis Examples a-3 to a-5 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, as in Synthesis Examples a -1 to a _ 2, the copolymer monomers and addition amounts were changed as shown in Table 1 to synthesize copolymers. . -63 · This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 __B7 V. Description of the invention (62) Table 1 Synthetic table of copolymers (R-1) to (R-5) 1 Synthetic example resin number polymer structure composition ratio x: y: z weight average molecular weight a — 1 R- 1 1 9 3: 7 1 0, 0 0 0 a — 2 R-2 Q ° CO 9 0:10 12,000 a — 3 R- 3 8 0:20 13,000 a — 4 R— 4 ^ & 8 5:15 1 1, 0 0 0 a — 5 R— 5 80:10:10 8,000 (Please read the precautions on the back before (Fill in this page) Printed Synthesis Example bl [Consumer of acid-decomposable polymer (B-1)] printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employees' Cooperatives [20-g] Resin 20g (R-1) was dissolved in 100g propylene glycol methyl ether acetate In the ester (PGMEA), the solution was decompressed at 60 ° C and 20 mmHg, and about 20 g of the solvent was distilled off with water remaining in the system. Cool to 20 ° C, add 2.91 g (0.0291 mol) of 3-butyl vinyl ether and 0.05 g of p-toluenesulfonic acid pyridine-64- This paper is compliant with CNS A4 specification (210 X 297 public love) 5. Description of the invention (63) (Please read the precautions on the back before filling in this page) The solution of salt dissolved in 3.67g (0.0291 mole) of cyclohexanediol. After stirring was continued at 20 ° C for 2 hours, 0.04 g of triethylamine was added to stop the reaction. 100 ml of ethyl acetate was added to the reaction mixture, and 50 ml of water and 3 ml of 1 acetone were added for extraction. After repeating the water-washing extraction operation three times, the water in the distillation system was removed at 60 ° C and 20 mmHg. The concentration of this solution was adjusted to 20% with PGMEA (resin (B-1)). Synthesis Example b-2 [Synthesis of acid-decomposable polymer (B-2)] 20 g of resin (R-2) was dissolved in 100 g of PGMEA, and the solution was depressurized at 60 ° C and 20 mmHg, so that Approximately 20 g of the solvent was distilled off together with the water remaining in the system. After cooling to 20 ° C, 2.5 2 g (0.0349 mole) of vinyl vinyl ether and 0.05 g of p-toluenesulfonic acid pyridine salt were added. After stirring was continued at 20 ° C for 2 hours, 0.04 g of triethylamine was added to stop the reaction. 100 ml of ethyl acetate was added to the reaction mixture, and 50 ml of water and 3 ml of acetone were added to perform the extraction operation. After repeating the water washing extraction operation three times, the moisture in the unloading system at 60 ° C and 20 mmHg was removed. The concentration of this solution was adjusted to 20% with PGMEA (resin (B-2)). Synthesis Example b-3 [Synthesis of acid-decomposable polymer (B- 3)] Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs, dissolve 20g of resin (R-3) in 100g of PGMEA, and make the solution at 60 ° C The pressure was reduced at 20 mmHg, and about 20 g of the solvent was co-distilled off with the water remaining in the system. Cool to 2 (TC, add 5.93 g (0.023 3 mol) of 4-ethylene oxide ethyl-4- (3-butyl) cyclohexane pyridine salt. After stirring at 20 ° C for 2 hours, add 0.04g of triethylamine to stop the reaction. 100ml of ethyl acetate was added to the reaction mixture, and 50ml of water and 3ml of acetone were added to perform the extraction operation. After repeating the water washing extraction operation 3 times, it was removed at -65. Standard (CNS) A4 specification (210 X 297 mm) Milk 5645 A7 B7 I. Description of the invention (64) The water in the distillation system is distilled at 60 ° C and 20mmHg. The concentration of this solution is adjusted to 20% with PGMEA ( Resin (B-3)). -I · II (Please read the precautions on the back before filling this page) Synthesis Example b-4 [Synthesis of Acid Decomposable Polymer (B-4)] 20 g of resin (R- 4) Dissolve in 100g PGMEA, make the solution under reduced pressure at 60 ° C, 20mmHg, distill off about 20g of solvent and water remaining in the system. Cool to 20 ° C, add 3.84g (0.0383) Mol) A solution of 3-butyl vinyl ether and 0.05 g of p-toluenesulfonic acid pyridine dissolved in 4.14 g (0.0383 mol) of pentanol. Stirring is continued for 2 hours at 20 ° C. 0.04g of triethylamine was added to stop the reaction. 100ml of ethyl acetate was added to the reaction mixture, and 50ml of water and 3ml of acetone were added to perform the extraction operation. The washing operation was repeated 3 times, and the removal was performed at 60 ° C and 20mmHg. The water in the system was distilled off. The concentration of the solution was adjusted to 20% with PGMEA (resin (B-4)). Synthesis Example b-5 [Synthesis of Acid Decomposable Polymer (B-5)] | 20g of resin (R-5) was dissolved in 100g of PGMEA, the solution was depressurized at 60 ° C and 20mmHg, and about 20g of the solvent was distilled away with the water remaining in the system. Cool to 20 ° C, add 4.63g (0.0463 mol) Isobutyl vinyl ether and 0.05g p-toluenesulfonic acid pyridine salt are printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. After stirring for 2 hours at 20 ° C, 0.04g of triethylamine is added to Stop the reaction. Add 100 ml of ethyl acetate to the reaction mixture, and add 50 ml of water and 3 ml of acetone to perform the extraction operation. After repeating the water washing extraction operation 3 times, remove the water in the distillation system at 60 ° C and 20 mmHg. The concentration of this solution was adjusted to 20% with PGMEA (resin (B-5)). The list of acid-decomposable polymers is shown in Table 2. -66- This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 V. Description of the invention (65) Table 2 Acid-decomposable polymer

--- (請先閱讀背面之注意事項再填寫本頁) 丨線_ 經濟部智慧財產局員工消費合作社印製 使20g聚(對-羥基苯乙烯MVP- 8000 ··日本曹達(股)製) 溶解於100g丙二醇甲醚乙酸酯(PGMEA)中,使該溶液在 60°C、20mmHg下減壓,使約20g溶劑與殘存於系中之水 共同餾去。冷卻至20°C,添加使4 . 17g(0.0416莫耳)第3. 丁基乙烯醚及0.05g對-甲苯磺酸吡啶鹽溶解於5.25g (0.0416莫耳)環己二醇之溶液。在20°C下繼續攪拌2小 時後,添加0.04g三乙胺以停止反應。在反應混合物中 -67- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱 495645 A7 B7 五、發明說明(66 ) 加入100ml醋酸乙酯,另加入50ml水及3ml丙酮以進行萃 取操作。重複水洗萃取操作3次後,除去在60°C、20mmHg 下進行餾出系中之水分。使該溶液之濃度以PGMEA調製 成 20% 樹脂((C-1))。 合成例c-2[酸分解性聚合物(C-2)之合成] 使20g聚(對-羥基苯乙烯MVP-8000 :日本曹達(股)製) 溶解於l〇〇g PGMEA中,使該溶液在60°C、20mmHg下減壓 ,使約20g之溶劑與殘存於系中之水共同餾去。冷卻至 20°C,添加使3.00g( 0.0416莫耳)乙基乙烯醚及0.05g對 -甲苯磺酸吡啶鹽溶解於3.67g( 0.0291莫耳)。在20°C下 繼續攪拌2小時後,添加0.04g三乙胺以停止反應。在反 應混合物中加入l〇〇ml醋酸乙酯,另加入50ml水及3m 1丙 酮以進行萃取操作。重複水洗萃取操作3次後,除去在 60°C、20mmHg下進行餾出系中之水分。使該溶液之濃度 以PGMEA調製成20% (樹脂(C-2))。 合成例c-3[酸分解性聚合物(C-3)之合成] 使20g聚(對-羥基苯乙烯)(VP-8000 :日本曹達(股)製) 溶解於l〇〇g PGMEA中,使該溶液在6(TC、20mmHg下減壓 ,使約之溶劑與殘存於系中之水共同餾去。冷卻至 20°C,添加使8.47g( 0.0333莫耳)2-乙烯氧化乙基-4_ (第 3-丁基)環己烷羧酸酯及0.05g對-甲苯磺酸吡啶鹽。在 20°C下繼續攪拌2小時後,添加0.04g三乙胺以停止反應 。在反應混合物中加入100ml醋酸乙酯,另加入50ml水 及3ml丙酮以進行萃取操作。重複水洗萃取操作3次後, -68- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -I - I I (請先閱讀背面之注意事項再填寫本頁) 訂· · 線· 經濟部智慧財產局員工消費合作社印製 ^5645 A7 -- ---B7 五、發明說明(67 ) 除去在60°C、20mmHg下進行I留出系中之水分。使該溶液 之濃度以PGMEA調製成20% (樹脂(C-3))。 (請先閱讀背面之注意事項再填寫本頁) 實施例及比較例 (感放射線性樹脂組成物之調製與評估) 使下述表3所示之各原料溶解於8g PGMEA,且以0 . 1 // n 之過濾器予以過濾,作成樹脂組成物溶液(各樹脂使用 PGMEA溶液,表中係以固成份換算値表示)。 使該樹脂組成物溶液使用旋轉塗覆器,施予六甲基二 矽烷處理之矽晶圓上均勻地塗覆,且在120°C、在熱板 上進行加熱乾燥90秒,以形成0 . 5 // m之阻體膜。對該阻 體膜而言,使用KrF準分子分檔曝光器(NA=0.63)、使用 線與間隙用光罩予以圖樣曝光,曝光後直接在11 (TC、 、熱板上加熱90秒。另外,以2. 3 8%四甲銨氫氧化物水 溶液、在23°C下顯像60秒,在30秒中以純水洗淨後乾 燥。 此處,使所得的圖樣以掃描型電子顯微鏡觀察,且如 下述評估阻體之性能。 經濟部智慧財產局員工消費合作社印制衣 感度係以在光罩上具有0.24 // m之線與空間圖樣爲〇 · 24 //m之線圖樣的最小曝光能量(最小曝光量)決定。 解像力係以該最小曝光量可解像的臨界解像力。 圖樣之側壁角係以〇 . 24 // m之線圖樣的側壁角度以掃 描型電子顯微鏡觀察,以自基板面之角度表示。 圖樣下部之分叉係以沒有分叉者爲A、稍有分叉者爲B 、有顯著分叉者爲C、有插入者爲D。 -69- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) " 495645 A7 B7 五、發明說明(以) 表3實施例及比較例之光阻劑組成物--- (Please read the precautions on the back before filling this page) 丨 Line _ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to make 20g poly (p-hydroxystyrene MVP- 8000 ·· made by Japan's Soda Co., Ltd.) It was dissolved in 100 g of propylene glycol methyl ether acetate (PGMEA), and the solution was depressurized at 60 ° C and 20 mmHg, and about 20 g of the solvent was distilled off with water remaining in the system. After cooling to 20 ° C, a solution of 4.17 g (0.0416 mol) of 3.butyl vinyl ether and 0.05 g of p-toluenesulfonic acid pyridine in 5.25 g (0.0416 mol) of cyclohexanediol was added. After stirring at 20 ° C for 2 hours, 0.04 g of triethylamine was added to stop the reaction. In the reaction mixture -67- This paper size is in accordance with Chinese National Standard (CNS) A4 specifications (210 X 297 public love 495645 A7 B7 V. Description of the invention (66) Add 100ml ethyl acetate, add 50ml water and 3ml acetone to carry out Extraction operation. After repeating the water washing extraction operation three times, the water in the distillation system was removed at 60 ° C and 20 mmHg. The concentration of this solution was adjusted to 20% resin ((C-1)) with PGMEA. Synthesis Example c -2 [Synthesis of acid-decomposable polymer (C-2)] 20 g of poly (p-hydroxystyrene MVP-8000: manufactured by Soda Co., Ltd.) was dissolved in 100 g of PGMEA, and the solution was dissolved in 60 g of Depressurize at 20 ° C and 20 mmHg to distill off about 20 g of solvent and water remaining in the system. Cool to 20 ° C, add 3.00 g (0.0416 mol) of ethyl vinyl ether and 0.05 g of p-toluenesulfonate. The acid pyridine salt was dissolved in 3.67 g (0.0291 mol). After stirring at 20 ° C for 2 hours, 0.04 g of triethylamine was added to stop the reaction. 100 ml of ethyl acetate was added to the reaction mixture, and another 50 ml was added. Water and 3m 1 of acetone for extraction operation. After repeating the water washing extraction operation 3 times, remove it at 60 ° C and 20mmHg. The water in the system was distilled off. The concentration of this solution was adjusted to 20% with PGMEA (resin (C-2)). Synthesis Example c-3 [Synthesis of Acid Decomposable Polymer (C-3)] 20 g (P-hydroxystyrene) (VP-8000: manufactured by Soda Co., Ltd.) was dissolved in 100 g of PGMEA, and the solution was depressurized at 6 (TC, 20 mmHg), and the solvent and the remainder were left in the system. The water was distilled off together. After cooling to 20 ° C, 8.47 g (0.0333 mol) of 2-ethylene oxide ethyl-4- (3-butyl) cyclohexanecarboxylate and 0.05 g of p-toluenesulfonic acid were added. Pyridine salt. After continuing to stir at 20 ° C for 2 hours, 0.04 g of triethylamine was added to stop the reaction. 100 ml of ethyl acetate was added to the reaction mixture, and 50 ml of water and 3 ml of acetone were added to perform the extraction operation. Repeated washing and extraction operations After 3 times, -68- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) -I-II (Please read the precautions on the back before filling this page) Order · · Line · Ministry of Economy Printed by the Intellectual Property Bureau's Consumer Cooperative ^ 5645 A7---- B7 V. Description of the invention (67) Remove the water in the system that is left at 60 ° C and 20mmHg The concentration of this solution was adjusted to 20% with PGMEA (resin (C-3)). (Please read the precautions on the back before filling out this page) Examples and Comparative Examples (Modulation and Evaluation of Radiation Sensitive Resin Compositions) Each raw material shown in Table 3 below was dissolved in 8 g of PGMEA, and filtered with a filter of 0.1 / 1 // n to prepare a resin composition solution (the PGMEA solution was used for each resin, and the table is expressed in terms of solid content conversion). ). The resin composition solution was uniformly coated on a silicon wafer treated with hexamethyldisilanes using a spin coater, and heated and dried at 120 ° C on a hot plate for 90 seconds to form 0. 5 // m barrier film. For this barrier film, a KrF excimer stepped exposure device (NA = 0.63) was used for pattern exposure using a line and gap mask, and after exposure, it was directly heated on a 11 (TC,, hot plate for 90 seconds. In addition, It was developed with a 2.3% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 60 seconds, washed with pure water in 30 seconds, and dried. Here, the obtained pattern was observed with a scanning electron microscope. The performance of the barrier is evaluated as follows. The sensitivity of the printed clothing of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is based on the smallest 0.24 // m line and space pattern on the reticle. The exposure energy (minimum exposure) is determined. The resolution is the critical resolution that can be resolved with this minimum exposure. The sidewall angle of the pattern is observed with a scanning electron microscope at a sidewall angle of the line pattern of 0.24 // m. The angle of the substrate surface is indicated. The forks in the lower part of the pattern are A without a fork, B with a slight fork, C with a significant fork, and D with an insert. -69- This paper standard applies to China National Standard (CNS) A4 Specification (210 X 297 mm) " 495645 A7 B7 V. Description of the invention (with) Table 3 Examples and Comparative Examples of Photoresist Compositions

No. 翻旨 光酸發生劑 有機鹼化合物 實施例1 B-l(1.6g) D-3(0.08g) E-3(0.005g) 2 B-2(1.6g) D-l(0.04g) D-2(0.04g) E-l(0.005g) 3 B-3(1.6g) D-3(0.08g) E-2(0.005g) 4 B-4(1.6g) D-1(0.09g) D-2(0.08g) E-3(0.005g) l>I(0.l)l)5g) — 5 B-5(1.6g) 6 B-l(1.6g) D-3(0.08g) E-2(0.005g) 7 B-2(1.6g) D-l(0.08g) E-3(0.005g) 8 B-3(1.6g) D-2(0.08g) E-l(0.005g) 9 B-l(0.8g) B-2(0.8g) D-3(0.08g) E-2(0.005g) 比較例1 C-l(1.6g) D-3(0.08g) E-3(0.005g) 2 C-2(1.6g) D-l(0.04g) D-2(0.04g) E-l(0.005g) 3 C-3(1.6g) D-3(0.08g) E-2(0.005g) •I裝—— (請先閱讀背面之注意事項再填寫本頁) -丨線· 經濟部智慧財產局員工消費合作社印製 -70- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 B7 經濟部智慧財產局員工消費合作社印制衣No. Photoacid generator organic base compound Example 1 Bl (1.6g) D-3 (0.08g) E-3 (0.005g) 2 B-2 (1.6g) Dl (0.04g) D-2 ( 0.04g) El (0.005g) 3 B-3 (1.6g) D-3 (0.08g) E-2 (0.005g) 4 B-4 (1.6g) D-1 (0.09g) D-2 (0.08 g) E-3 (0.005g) l > I (0.l) l) 5g) — 5 B-5 (1.6g) 6 Bl (1.6g) D-3 (0.08g) E-2 (0.005g) 7 B-2 (1.6g) Dl (0.08g) E-3 (0.005g) 8 B-3 (1.6g) D-2 (0.08g) El (0.005g) 9 Bl (0.8g) B-2 ( 0.8g) D-3 (0.08g) E-2 (0.005g) Comparative Example 1 Cl (1.6g) D-3 (0.08g) E-3 (0.005g) 2 C-2 (1.6g) Dl (0.04 g) D-2 (0.04g) El (0.005g) 3 C-3 (1.6g) D-3 (0.08g) E-2 (0.005g) • I equipment-(Please read the precautions on the back first (Fill in this page)-丨 Line · Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-70- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 495645 A7 B7 Cooperative prints

(請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 495645 A7 ___B7 五、發明說明(7〇) 表4實施例及比較例 No· 臨界解像力(//m) _壁角(度) 分叉情形 實施例1 0.17 88 A 2 0.18 88 A 3 0.17 89 A 4 0.17 88 A 5 0.18 89 A 6 0.17 88 A 7 0.18 88 A 8 0.18 88 A 9 0.17 89 A 比較例1 0.21 86 C 2 0.22 86 D 3 0.21 85 ^ 一 — (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 如上述表4所示,本發明實施例之組成物的解像力、 側壁角度之垂直性、無分叉,全部皆極爲優異。另外’ 比較例之組成物的解像力不佳’尤其側壁角度之垂直性 及分叉不佳。 [發明之效果] 藉由本發明可得高解像力、且圖樣側壁角之垂直性優 異、圖樣下部無分叉的化學增幅型正型光阻劑組成物。 72- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)(Please read the precautions on the back before filling in this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 495645 A7 ___B7 V. Description of the invention (70) Table 4 Examples and Comparative Examples No. Critical Resolution (// m) _Wall Angle (degrees) Bifurcation Case Example 1 0.17 88 A 2 0.18 88 A 3 0.17 89 A 4 0.17 88 A 5 0.18 89 A 6 0.17 88 A 7 0.18 88 A 8 0.18 88 A 9 0.17 89 A Comparative Example 1 0.21 86 C 2 0.22 86 D 3 0.21 85 ^ I — (Please read the precautions on the back before filling out this page) The Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs printed as shown in Table 4 above It is shown that the resolution of the composition of the embodiment of the present invention, the perpendicularity of the side wall angle, and no bifurcation are all excellent. In addition, the 'comparative power of the composition of the comparative example is not good', especially the perpendicularity of the side wall angle and the bifurcation. [Effects of the Invention] According to the present invention, a chemically amplified positive photoresist composition having high resolution, excellent verticality of the sidewall angle of the pattern, and no branch at the bottom of the pattern can be obtained. 72- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

495645495645 (91年2月22日修正) 六、申請專利範圍 Λ申請專利範圍: 1 . 一種正型光阻劑組成物,其包含:(a )至少具有以下 述一般式(I )、( I I )和(I I I )所示構成單位的共聚合 物A,其中(I )、( I I )和(I I I )分別爲40〜90莫耳%、 5〜40莫耳%和3〜40莫耳%,(b)藉由活性光線或放射 線產生酸之化合物,及(c )溶劑;(Amended on February 22, 1991) 6. Scope of patent application Λ scope of patent application: 1. A positive photoresist composition comprising: (a) at least the following general formulae (I), (II) and (III) Copolymer A of the constituent units shown in (I), (II), and (III) are 40 to 90 mole%, 5 to 40 mole%, and 3 to 40 mole%, respectively, (b ) Compounds which generate acid by active light or radiation, and (c) solvents; 式中(I)〜(II)中,1及R2各互相獨立地代表氫原子 或甲基,R4代表直鏈狀、支鏈狀或環狀可有取代基 之烷基、可有取代基之芳烷基、可有取代基之芳基 或式(I V )所示之基, —γ—〇—C*—~Z (IV) 其中Y代表可有取代基之碳數1〜20伸烷基,z代表 可有取代基之碳數1〜20烷基、支鏈狀或環狀烷 基、可有取代基之碳數6〜20芳基或可有取代基之 碳數7〜20芳烷基, 式(II I )中,In the formulae (I) to (II), 1 and R2 each independently represent a hydrogen atom or a methyl group, and R4 represents a linear, branched, or cyclic alkyl group which may have a substituent, and an alkyl group which may have a substituent. Aryl, aryl which may have a substituent or a group represented by formula (IV), —γ—0—C * — ~ Z (IV) where Y represents a carbon number of 1 to 20 which may have a substituent , Z represents an alkyl group having 1 to 20 carbons which may have a substituent, a branched or cyclic alkyl group, an aryl group having 6 to 20 carbons which may have a substituent or an aralkyl group having 7 to 20 carbons which may have a substituent In formula (II I), 495645 六、申請專利範圍 L代表氫原子或甲基,X代表可有取代基之具飽和縮 合多環型烴或可有取代基之飽和橋連環烴之基。 2 ·如申請專利範圍第1項之正型光阻劑組成物,其中 (a )共聚物(A )更含有下列一般式(V )所示構造單位’495645 6. Scope of patent application L represents a hydrogen atom or a methyl group, and X represents a saturated condensed polycyclic hydrocarbon which may have a substituent or a saturated bridged cyclic hydrocarbon which may have a substituent. 2. The positive photoresist composition according to item 1 of the scope of patent application, wherein (a) the copolymer (A) further contains a structural unit represented by the following general formula (V) ' (V)(V) 其中I係如申請專利範圍第1項中所定義,R係氫 胃子、碳數1〜4之直鏈狀或支鏈狀烷基、甲氧基或 乙醯氧基。Among them, I is as defined in item 1 of the scope of the patent application, and R is hydrogen, a linear or branched alkyl group having 1 to 4 carbon atoms, a methoxy group, or an ethoxy group.
TW089122530A 1999-10-28 2000-10-26 Positive-type photoresist composition TW495645B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30731899 1999-10-28

Publications (1)

Publication Number Publication Date
TW495645B true TW495645B (en) 2002-07-21

Family

ID=17967713

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089122530A TW495645B (en) 1999-10-28 2000-10-26 Positive-type photoresist composition

Country Status (2)

Country Link
KR (1) KR100741683B1 (en)
TW (1) TW495645B (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3709657B2 (en) * 1997-06-10 2005-10-26 Jsr株式会社 Radiation sensitive composition
JP3702590B2 (en) * 1997-07-11 2005-10-05 Jsr株式会社 Radiation sensitive resin composition

Also Published As

Publication number Publication date
KR100741683B1 (en) 2007-07-23
KR20010040163A (en) 2001-05-15

Similar Documents

Publication Publication Date Title
JP4177952B2 (en) Positive resist composition
JP4231622B2 (en) Positive resist composition
KR100760245B1 (en) Positive-working resist composition
JP4262402B2 (en) Positive resist composition
EP0869393B1 (en) Positive photosensitive composition
KR100883541B1 (en) Positive radiation-sensitive composition
JPH1097060A (en) Positive photosensitive composition
KR100524446B1 (en) Positive-working photoresist composition
KR100424148B1 (en) Chemically Amplified Positive Resist Composition
KR19980078080A (en) The positive photosensitive composition
KR100848045B1 (en) Positive resist composition
JP3954233B2 (en) Positive photoresist composition
JP3773139B2 (en) Positive photosensitive composition
KR19990007301A (en) Positive photoresist composition
JP3982958B2 (en) Positive photosensitive composition
JP4177966B2 (en) Positive photoresist composition
JP2002221787A (en) Positive type radiosensitive composition
KR100504706B1 (en) Positive resist composition and pattern formation method using the same
JP3890358B2 (en) Positive photosensitive resin composition and pattern forming method
KR100458398B1 (en) Chemically Amplified Positive Resist Composition
JP3890365B2 (en) Positive resist composition
JP3907165B2 (en) Positive resist composition
KR100692264B1 (en) Positive radiation-sensitive resin composition
TW495645B (en) Positive-type photoresist composition
JP3963708B2 (en) Positive resist composition

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees