TW492578U - Light emitting device of nitride semiconductor for the element of the third family in periodic table - Google Patents

Light emitting device of nitride semiconductor for the element of the third family in periodic table

Info

Publication number
TW492578U
TW492578U TW090200903U TW90200903U TW492578U TW 492578 U TW492578 U TW 492578U TW 090200903 U TW090200903 U TW 090200903U TW 90200903 U TW90200903 U TW 90200903U TW 492578 U TW492578 U TW 492578U
Authority
TW
Taiwan
Prior art keywords
family
light emitting
emitting device
nitride semiconductor
periodic table
Prior art date
Application number
TW090200903U
Other languages
Chinese (zh)
Inventor
Masayoshi Koike
Shinya Asami
Shigeo Mori
Original Assignee
Toyoda Gosei Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Kk filed Critical Toyoda Gosei Kk
Publication of TW492578U publication Critical patent/TW492578U/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
TW090200903U 1995-12-28 1996-08-21 Light emitting device of nitride semiconductor for the element of the third family in periodic table TW492578U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35305095A JP3637662B2 (en) 1995-12-28 1995-12-28 Group 3 nitride semiconductor light emitting device

Publications (1)

Publication Number Publication Date
TW492578U true TW492578U (en) 2002-06-21

Family

ID=18428234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090200903U TW492578U (en) 1995-12-28 1996-08-21 Light emitting device of nitride semiconductor for the element of the third family in periodic table

Country Status (3)

Country Link
JP (1) JP3637662B2 (en)
KR (1) KR100289595B1 (en)
TW (1) TW492578U (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445127B1 (en) 1998-02-17 2002-09-03 Matsushita Electric Industrial Co., Ltd. Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP2009081379A (en) * 2007-09-27 2009-04-16 Showa Denko Kk Group iii nitride semiconductor light-emitting device
JP2012089651A (en) * 2010-10-19 2012-05-10 Showa Denko Kk Group iii nitride semiconductor device, multi-wavelength light emitting group iii nitride semiconductor layer, and method for manufacturing multi-wavelength light emitting group iii nitride semiconductor layer
JP2012089678A (en) * 2010-10-19 2012-05-10 Showa Denko Kk Group iii nitride semiconductor device and multi-wavelength light emitting group iii nitride semiconductor layer
WO2012157198A1 (en) * 2011-05-18 2012-11-22 パナソニック株式会社 Nitride semiconductor light-emitting element and manufacturing method therefor
CN105428448B (en) * 2015-09-29 2018-06-08 北京大学 A kind of bi-component grading structure solar cell and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06101587B2 (en) * 1989-03-01 1994-12-12 日本電信電話株式会社 Semiconductor light emitting element
JP2564024B2 (en) * 1990-07-09 1996-12-18 シャープ株式会社 Compound semiconductor light emitting device

Also Published As

Publication number Publication date
KR100289595B1 (en) 2001-06-01
KR970054564A (en) 1997-07-31
JP3637662B2 (en) 2005-04-13
JPH09186362A (en) 1997-07-15

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004
MK4K Expiration of patent term of a granted utility model