KR970054564A - Group III nitride semiconductor light emitting device - Google Patents

Group III nitride semiconductor light emitting device Download PDF

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Publication number
KR970054564A
KR970054564A KR1019960037785A KR19960037785A KR970054564A KR 970054564 A KR970054564 A KR 970054564A KR 1019960037785 A KR1019960037785 A KR 1019960037785A KR 19960037785 A KR19960037785 A KR 19960037785A KR 970054564 A KR970054564 A KR 970054564A
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South Korea
Prior art keywords
light emitting
layer
nitride semiconductor
emitting device
group iii
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KR1019960037785A
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Korean (ko)
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KR100289595B1 (en
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마사요시 고이케
시게오 모리
신야 아사미
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도다 다다히데
도요다 고세 가부시키가이샤
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Publication of KR100289595B1 publication Critical patent/KR100289595B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 발명의 목적은 자외선 영역의 발광강도를 증가시키는 것으로서, p층(61,62), n층(4,3), p층과 n층으로 끼여진 발광층(5)을 구비하고, 각층이 3족 질화물 반도체로 이루어지는 발광소자에 있어서, 발광층(5)의 두께를 1∼200nm로 하였으며, 또한, 발광층(5)을 Ga0.92In0.08N으로 하고, Si와 Zn을 1×1017∼ 5×1018/㎤로 첨가하였다. 380nm의 발광강도는 발광층(5)의 두께가 400nm인 경우와 비교하여 5배로 증가하였다.An object of the present invention is to increase the intensity of light emission in the ultraviolet region, comprising p layers 61 and 62, n layers 4 and 3, and a light emitting layer 5 sandwiched between p layers and n layers, each layer having three layers. In the light emitting device made of a group nitride semiconductor, the thickness of the light emitting layer 5 was 1 to 200 nm, the light emitting layer 5 was Ga 0.92 In 0.08 N, and Si and Zn were 1 × 10 17 to 5 × 10. Added at 18 / cm 3. The luminescence intensity of 380 nm was increased five times as compared with the case where the thickness of the light emitting layer 5 was 400 nm.

Description

3족 질화물 반도체 발광소자Group III nitride semiconductor light emitting device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 구체적인 실시예와 관계되는 발광 다이오드의 구성을 나타낸 구성도.1 is a block diagram showing the configuration of a light emitting diode according to a specific embodiment of the present invention.

Claims (6)

p층,n층,p층과 n층으로 끼여진 발광층을 구비하고, 각층이 3족 질화물 반도체로 구성되는 발광소자에 있어서, 상기 발광층에는 도너 불순물과 억셉터 불순물이 동시에 첨가되어 있고, 상기 발광층의 두께를 1∼200nm로 하며, 출력되는 광을 도너 불순물 레벨과 가전자대, 전도대와 억셉터 불순물 레벨사이, 또는 전도대와 가전대 사이의 전자의 천이에 의한 발광파장으로 한 것을 특징으로 하는 3족 질화물 반도체 발광소자.A light emitting device comprising a p-layer, an n-layer, a p-layer, and an n-layer interposed therebetween, each layer comprising a group III nitride semiconductor, wherein a donor impurity and an acceptor impurity are simultaneously added to the light-emitting layer, and the light-emitting layer Is a thickness of 1 to 200 nm, and the output light is a light emission wavelength caused by transition of electrons between donor impurity level and valence band, conduction band and acceptor impurity level, or between conduction band and home appliance band. Nitride semiconductor light emitting device. 제1항에 있어서, 상기 발광층은 Alx, GayInl-x-yN(0≤x≤1, 0≤y≤1, 0≤x+y≤1)을 적어도 1층 이상 적층한 양자우물 구조인 것을 특징으로 하는 3족 질화물 반도체 발광소자.The method of claim 1, wherein the light emitting layer is Al x , Ga y In lxy N ( 0≤x≤1 , 0≤y≤1 , 0≤x + y≤1 ) is a quantum well structure of at least one layer laminated Group III nitride semiconductor light emitting device. 제1항에 있어서, 상기 발광층은 GayInl-xN(0≤x≤1)인 것을 특징으로 하는 3족 질화물 반도체 발광소자.The group III nitride semiconductor light emitting device of claim 1, wherein the light emitting layer is Ga y In lx N (0 ≦ x ≦ 1). 제1항에 있어서, 상기 발광층의 두께는 15∼200nm인 것을 특징으로 하는 3족 질화물 반도체 발광소자.The group III nitride semiconductor light emitting device according to claim 1, wherein the light emitting layer has a thickness of 15 nm to 200 nm. 제1항에 있어서, 상기 도너 불순물은 실리콘(Si), 텔루르(Te), 유황(S), 셀렌(Se)이고, 상기 억셉터 불순물은 마그네슘(Mg) 또는 아연(Zn)인 것을 특징으로 하는 3족 질화물 반도체 발광소자.The method of claim 1, wherein the donor impurities are silicon (Si), tellurium (Te), sulfur (S), selenium (Se), and the acceptor impurities are magnesium (Mg) or zinc (Zn). Group III nitride semiconductor light emitting device. 제1항에 있어서, 상기 발광층에 첨가되는 불순물의 농도는 1×1017∼ 5×1018/㎤인 것을 특징으로 하는 3족 질화물 반도체 발광소자.The group III nitride semiconductor light emitting device according to claim 1, wherein the concentration of the impurity added to the light emitting layer is 1 × 10 17 to 5 × 10 18 / cm 3. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960037785A 1995-12-28 1996-09-02 Group III-nitride semiconductor light emitting device KR100289595B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35305095A JP3637662B2 (en) 1995-12-28 1995-12-28 Group 3 nitride semiconductor light emitting device
JP95-353050 1995-12-28

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KR970054564A true KR970054564A (en) 1997-07-31
KR100289595B1 KR100289595B1 (en) 2001-06-01

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445127B1 (en) 1998-02-17 2002-09-03 Matsushita Electric Industrial Co., Ltd. Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP2009081379A (en) * 2007-09-27 2009-04-16 Showa Denko Kk Group iii nitride semiconductor light-emitting device
JP2012089678A (en) * 2010-10-19 2012-05-10 Showa Denko Kk Group iii nitride semiconductor device and multi-wavelength light emitting group iii nitride semiconductor layer
JP2012089651A (en) * 2010-10-19 2012-05-10 Showa Denko Kk Group iii nitride semiconductor device, multi-wavelength light emitting group iii nitride semiconductor layer, and method for manufacturing multi-wavelength light emitting group iii nitride semiconductor layer
CN103081138A (en) 2011-05-18 2013-05-01 松下电器产业株式会社 Nitride semiconductor light-emitting element and manufacturing method therefor
CN105428448B (en) * 2015-09-29 2018-06-08 北京大学 A kind of bi-component grading structure solar cell and preparation method thereof

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JPH06101587B2 (en) * 1989-03-01 1994-12-12 日本電信電話株式会社 Semiconductor light emitting element
JP2564024B2 (en) * 1990-07-09 1996-12-18 シャープ株式会社 Compound semiconductor light emitting device

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KR100289595B1 (en) 2001-06-01
JPH09186362A (en) 1997-07-15
TW492578U (en) 2002-06-21

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