TW491987B - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
- Publication number
- TW491987B TW491987B TW089126217A TW89126217A TW491987B TW 491987 B TW491987 B TW 491987B TW 089126217 A TW089126217 A TW 089126217A TW 89126217 A TW89126217 A TW 89126217A TW 491987 B TW491987 B TW 491987B
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- Prior art keywords
- liquid crystal
- driver
- pixel
- crystal display
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0297—Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0219—Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3614—Control of polarity reversal in general
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
491987 A7 五、發明說明(1 ) 發明背景 本發明有關所謂之主動陣列驅動式液晶顯示裝置,立係 藉TFT(薄膜電晶體)驅動,尤其有關_種使用於投影系統之 小型液晶顯示裝置。 一圖1 3顯7F習用於投影系統之小型主動陣列驅動式液晶顯 7F (LCD)裝置的驅動系統結構實例。圖i 7係示意該驅動方 法之實例。傳統上,因爲投影系統所使用之小型主動陣列 驅動式液晶顯示器LCD裝置需使驅動器LSI(大規模積體電 路)之連接間距極小,通常使用所謂之驅動器_ 一體成型式 液曰曰”,員7F器LCD裝置,其係使用多晶石夕薄膜電晶體而收納 一驅動器。 就驅動操作而言,如圖13所示,欲顯示之視頻數據信號 係以類比#號形式送入,之後由A/D轉換器丨轉換成數位信 號’孩信號由處理器2進行處理,諸如顯示數據電壓之厂控 制,以調整液晶之電光響應(即ν_τ曲線),勞幕格式轉換 ,定標=。經處理之信號藉D/A轉換器3逆轉換回至類比信 號,再藉多個抽樣-及_保持電路4而進一步轉換成多相並行 信號]之後,當該頻率降低至” w(程數),,時,該信號經由 線性放大器(未示)提供至液晶顯示器LCD面板的數據驅動 器。 該數據驅動器中,此等及其他數據信號根據由水平掃描 電路之輸出所控制之類比開關(未示)的開/關而保持於源極 匯流排線之電容中。之後,該源極匯流排線所保持之此等 數據信號經由薄膜電晶體傳輸至連接於源極匯流排線之個 -4 - (0 . f ϋ I ϋ n ϋ ϋ ·ϋ ϋ (請先閱讀背面之注咅?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 — It---------^—0----------------------- A7 B7 、發明說明( =Γ,:數T水平掃描周期結束。結束-常平掃 J-月<後,孩數據信號保持於該像素之電容中。 電1:::’液晶之驅動操作中,爲防止定向膜及液晶因 丨一C損,及防止影像之滯留或暫留,需使用交 %垄以作局施加於該液晶的電壓。因此,如圖17B所示 么視頻數據信號之極性每—w框交替_次,以進行交流驅 動德結果’將每個圖框皆交替切換極性之信號電壓施加於 」象素電極·-具有由寫入之數據所決定之電位一及一相對 電極一其電位係設定於介於該像素電極之電位間的中間電 位。 、液晶響應均方根電壓。因此,若交替之正及負電壓具有 凡王對稱之波型,則形成光學響應係於切換該圖框的頻率 (即圖框頻率)下發生。然而,當該波型不對稱時,即使極 輕微’仍產生頻率爲圖框頻率之〗/2的分諧波部分。此外, 因爲薄膜電晶體具有在正及負情況下未完全對稱之特性, 故亦因切換之饋電而使DC電位產生偏移。因此,該相對電 極之包位係㊂又足此等效應對抗平衡。然而,即使一數據電 壓中之波型經調整而使極性完全對稱,仍極難於所有數據 電壓中達到完全對稱之波型,因爲液晶及薄膜電晶體之電 容器非線性及/或極性的不對稱和線性放大器電路之增益的 偏移。而且,即使可使該波型完全對稱,該波型仍可能隨 時間而偏移而改變,導致不對稱。 圖框頻率通常係爲6 0赫茲-8 5赫茲,其二次分諧波頻率 部分一具有3 0赫兹-4 3赫茲之頻率一對人眼出現閃爍,導 5- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)491987 A7 V. Description of the invention (1) Background of the invention The present invention relates to a so-called active-array-driven liquid crystal display device, which is driven by a TFT (thin film transistor), and particularly relates to a small liquid crystal display device used in a projection system. An example of the driving system structure of a small active-array-driven liquid crystal display 7F (LCD) device with a 3D 7F display used in a projection system. Figure i 7 shows an example of this driving method. Traditionally, because of the small active-array-drive LCD devices used in projection systems, the connection pitch between driver LSIs (large-scale integrated circuits) is extremely small, so-called drivers are commonly used. LCD device, which uses a polycrystalline silicon thin film transistor to house a driver. In terms of driving operation, as shown in Figure 13, the video data signal to be displayed is entered in the form of an analog ##, and then by A / D converter 丨 converted into a digital signal. The signal is processed by the processor 2, such as the factory display of the data voltage to adjust the electro-optical response of the liquid crystal (that is, the ν_τ curve), the conversion of the labor format, and the calibration =. The signal is inversely converted back to the analog signal by the D / A converter 3, and then further converted into a multi-phase parallel signal by a plurality of sample-and-hold circuits 4], then when the frequency is reduced to "w (number of passes) ,, At this time, the signal is provided to a data driver of the LCD panel of the liquid crystal display via a linear amplifier (not shown). In the data driver, these and other data signals are held in the capacitance of the source bus line according to the on / off of an analog switch (not shown) controlled by the output of the horizontal scanning circuit. After that, the data signals held by the source bus line are transmitted to the one connected to the source bus line through a thin film transistor -4-(0. F ϋ I 请 n ϋ ϋ · ϋ ϋ (Please read first Note on the back? Matters should be filled out on this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs — It --------- ^ — 0 --------------- -------- A7 B7, invention description (= Γ ,: the number T horizontal scanning period ends. After the end-Changping scan J-month <, the data signal of the child is kept in the capacitance of the pixel. Electric 1: :: 'In the driving operation of the liquid crystal, in order to prevent the orientation film and the liquid crystal from being damaged by a C, and to prevent the image from being retained or stagnant, it is necessary to use a voltage line to apply the voltage applied to the liquid crystal. Therefore, as shown in Figure 17B The polarities of the video data signals shown are alternated every -w frames for AC driving. The result is that the signal voltage of each frame is alternately switched to the "pixel electrode." The determined potential, a counter electrode, and its potential are set at the intermediate potential between the potentials of the pixel electrode. The liquid crystal responds to the rms voltage. Therefore If the alternating positive and negative voltages have a symmetrical pattern of the king, the formation of the optical response occurs at the frequency of the frame (that is, the frame frequency). However, when the waveform is asymmetric, even the slightest 'It still generates a sub-harmonic part whose frequency is / 2 of the frame frequency. In addition, because the thin film transistor has the characteristics of not being completely symmetrical under positive and negative conditions, the DC potential is also biased due to the switched feed. Therefore, the package system of the opposite electrode is sufficient for these effects to counterbalance. However, even if the wave shape in a data voltage is adjusted to make the polarity completely symmetrical, it is still very difficult to achieve a completely symmetrical wave in all data voltages. Due to the non-linear and / or polar asymmetry of the capacitors of the liquid crystal and thin film transistors and the gain shift of the linear amplifier circuit. Moreover, even if the wave pattern can be made completely symmetrical, the wave pattern may still shift with time. However, the frequency of the frame is usually 60 Hz-8 5 Hz, and the second harmonic frequency part of the frame has a frequency of 30 Hz-4 3 Hz. this Paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
--------訂---------線J 經濟部智慧財產局員工消費合作社印製 491987 A7 -" - B7 五、發明說明(3 ) 致顯示品質大幅降低。爲避免此種狀況,傳統上係進行所 謂之線轉換驅動,將液晶閃耀之頻率人工地加倍,如圖 所示,而使得該閃燦無法辨識。 然而,使用於習用投影系統之小型主動陣列驅動式液晶 顯7F器LCD裝置具有以下問題。即,於液晶顯示器lcd裝置 使用之驅動方法(掃描線轉換驅動,圖17A所示)中,具有相 反極性之電壓係施加於相鄰像素電極,以避免閃爍。因此 ,像素電極由相反極性電壓所夾置之電極邊緣上,介於該 像素電極與該相對電極間之均勻電場(以下稱爲"縱向電^ )被破壞,導致電場之橫向分量(以下稱爲"橫向電場,,)升 高。因此,例如,於TN(扭轉向列)模式中,對應於橫向電 場產生逆傾斜區域,且視預仰角而定。結果,於正常白色 模式中,其中該偏光板係設定於正交尼科爾(cr〇〜Nic〇1), 介於具有不同極性數據之像素間的像素電極邊緣上及附近 ,預傾斜區域及逆傾斜區域顯然與表面不均勻度、預仰角 、及檢向電場有關,產生於黑色顯示狀態下漏光之區域, 及液晶對於顯示數據電壓之電光響應(v_τ曲線)向著較高 包壓側端偏移之區域。另一方面,於其中偏光板設定於平 行尼科爾之正常黑色模式下,白色位準之透光度因爲前述 検向電場所致之效應而降低,此外,因爲無法於整體可見 聋巳圍内達成相同之偏光軸旋轉或旋光分散,而難以得到自 然之黑色。結果,ΤΝ模式之實際顯示受限於其中偏光板設 定於正交尼科爾之正常白色模式。 爲了於正常白色模式下得到充分之顯示品質,發生漏光 本紙張尺度適用中關家標準(CNS)A4規格⑵G χ 297公爱) 1·— ϋ ^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 — — — — — — — — — I — — — — — — — — — — — — — 外 1987 五、 經濟部智慧財產局員工消費合作社印製 發明說明(4) I區域及WT曲線偏向較高電壓側之區域需進行遮光 生漏光I區域及ν-Τ曲線偏向較高電壓側之區: 任一像素末端具有約略gj定^ ψ 申展Α舁 J % 1¾疋距離I處,因此,特別對於 型像素具有明顯之影響。使歸投影系統之習用小型主動 陣列驅動液晶顯示器LCD裝置等裝置中,早期採用源柄線 轉換驅動,因爲驅動中較不產生問題。然而,因爲像素尺 寸變得愈來愈小’故期望遮光之區域相對大,導致大幅 小之鏡孔比。 顯示區域中,如圖12所示,雖僅於垂直取向上提供源極 匯流排線5,但閘極匯流排線6及使用於儲存電容器之共用 線7仍係側向提供。因此,不透光之側向延伸區最初仍大於 不透光之垂直L伸區。因此,该掃描線轉換驅動雖於驅動 上具有部分問題,但仍可使用作爲遮光區,原始不透光之 側向延伸區,遮光區8係沿著源極匯流排線5延伸之取向而 位於彼此鄰接之像素9,9之間,而防止該鏡孔比降低。 然而,使用於投影系統之習用小型主動陣列驅動式液晶 顯示器LCD裝置等裝置中,若該像素尺寸變小,則需於該 像素電極靠頂端及末端反差比劇降之區域中進行進一步之 遮光,使得極難進一步提高鏡孔比。該轉換驅動所涉及之 問題的解答係一種驅動方,其消除線轉換驅動等方法(以下 ,此種驅動方法係稱爲"圖框轉換驅動")中之空間逆轉顯示 ,如圖17B所示。 然而,於此種圖框轉換驅動中,光學響應係於該圖框轉 向的頻率(即圖框頻率)下進行。就此言之,不幸地,若該 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) l·---------丨嬝 (請先閱讀背面之注意事項再填寫本頁) I ^ — — — — — — — — — I I------ 491987 A7 B7 五、發明說明(5 ) 波型稍有不對稱,則產生頻率爲該圖框頻率之丨/2的二次分 諧波頻率部分。如前文所述,該薄膜電晶體特性的極性並 非完全對稱,使得極難以針對所有數據電壓得到完全對稱 之波型,而且,該波型可能因爲時間之改變而偏移,導致 波型不對稱。 圖框頻率通常係爲6 0赫d - 8 5赫兹,其二次分諧波頻率 部分係爲3 0赫茲-4 3赫茲。該二次分諧波頻率部分看起來 係爲閃爍,導致大幅損及該顯示品質。爲避免此種情況, 曰本專利公開公告HEI 9-204159揭示一種藉由增加該圖框 頻率至約兩倍而防止閃爍的方法。 然而,使用於習用投影系統中之小型主動陣列驅動液晶 顯示器LCD裝置中,已採用使用多晶矽薄膜電晶體之驅動 器一體成型結構,以避免大幅縮小驅動器LSI之接點的間距 ,如前文所述。多晶矽薄膜電晶體之特性遠遜於單晶矽電 晶體’因此於高速操作時具有限制。因此,使用於投影系 統之習用小型主動陣列驅動液晶顯示器LCD裝置中,該信 號係藉由類比抽樣-及-保持電路4轉換成多相並行信號,如 圖1 3所示,操作頻率降低,而信號被送至該液晶顯示器 LCD面板上之數據驅動器。例如,進行XGA(擴充圖型陣列) 顯不時,該視頻信號分成多達每個液晶顯示器LCD裝置1 2 個相,擴充圖型陣列之源極數據信號的操作速度因爲位於 該液晶顯示器LCD面板側面上之數據驅動器而降至W1 2。 是故,爲了於此種情況下,藉由使得該圖框頻率升至兩 倍而防止閃燦’需將該視頻信號分成2 4 (= 12 X 2)相,以得 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱^7 (請先閱讀背面之注意事項再填寫本頁) 訇 經濟部智慧財產局員工消費合作社印制衣 一 0、· ϋ n I ϋ n n I ϋ k— ϋ n I n ϋ n ϋ i_i n 1 A7-------- Order --------- line J Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 491987 A7-"-B7 V. Description of the invention (3) The display quality is greatly reduced. In order to avoid this situation, the so-called line switching drive is traditionally used to manually double the frequency of the liquid crystal flare, as shown in the figure, making the flicker unrecognizable. However, a small active-array-drive LCD device 7F LCD device used in a conventional projection system has the following problems. That is, in a driving method (scanning line conversion driving, shown in FIG. 17A) used in a liquid crystal display LCD device, a voltage having an opposite polarity is applied to an adjacent pixel electrode to avoid flicker. Therefore, the uniform electric field (hereinafter referred to as " longitudinal electrical ^) between the pixel electrode and the opposite electrode is destroyed on the edge of the electrode sandwiched by the voltage of the opposite polarity of the pixel electrode, resulting in the lateral component of the electric field (hereinafter referred to as For " transverse electric field ,,). Therefore, for example, in the TN (twisted nematic) mode, a reverse tilt region is generated corresponding to the lateral electric field, and it depends on the pre-elevation angle. As a result, in the normal white mode, the polarizing plate is set at the cross Nicol (cr0 ~ Nic01), on and near the edge of the pixel electrode between pixels with different polar data, the pre-tilted area and The reverse tilt region is obviously related to the surface unevenness, the pre-elevation angle, and the direction-detecting electric field. It is generated in the area where light is leaked in the black display state, and the electro-optical response (v_τ curve) of the liquid crystal to the display data voltage is skewed toward the higher pressure side Move the area. On the other hand, in the normal black mode in which the polarizer is set to parallel Nicols, the transmittance of the white level is reduced due to the aforementioned effect caused by the electric field, and because it cannot be seen inside the deaf perimeter. The same polarization axis is rotated or the optical rotation is dispersed, and it is difficult to obtain natural black. As a result, the actual display of the TN mode is limited to the normal white mode in which the polarizer is set to the cross-Nicol. In order to obtain sufficient display quality in the normal white mode, light leakage occurs. The paper size applies the CNS A4 specification ⑵G χ 297 public love. 1 · — ϋ ^ (Please read the precautions on the back before filling in this page ) Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs — — — — — — — — — — — — — — — — — — — — — Outside 1987 V. Description of Inventions Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (4) I area and the area where the WT curve is biased to the higher voltage side need to be shielded to generate light leakage. I area and the area where the ν-T curve is biased to the higher voltage side: The end of any pixel has approximately gj fixed ^ ψ 展 展 Α 舁 J % 1¾ 疋 is at a distance of I, so it has a significant effect especially on the type pixel. In the conventional projection system, a small active-array driving liquid crystal display (LCD) device and other devices were originally driven by source-handle conversion because there were fewer problems in driving. However, as the pixel size becomes smaller, the area where light is expected to be blocked is relatively large, resulting in a significantly smaller lens aperture ratio. In the display area, as shown in FIG. 12, although the source bus bar 5 is provided only in the vertical orientation, the gate bus bar 6 and the common line 7 used for the storage capacitor are still provided laterally. Therefore, the opaque lateral extensions are still initially larger than the opaque vertical L extensions. Therefore, although the scan line conversion drive has some problems in driving, it can still be used as a light-shielding area. The original opaque lateral extension area. The light-shielding area 8 is located along the orientation of the source bus line 5 and is located. The pixels 9 and 9 adjacent to each other prevent the reduction of the lens aperture ratio. However, in the conventional small active-array drive liquid crystal display (LCD) device used in projection systems, if the pixel size becomes smaller, further shading is required in the area where the contrast of the pixel electrode near the top and the end drops sharply. It makes it extremely difficult to further improve the mirror-to-hole ratio. The answer to the problems involved in the conversion drive is a driver that eliminates the line conversion drive and other methods (hereinafter, this drive method is called " frame conversion drive "), as shown in Figure 17B. Show. However, in this frame conversion drive, the optical response is performed at the frequency at which the frame is turned (that is, the frame frequency). In this regard, unfortunately, if the paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) l · --------- 丨 袅 (Please read the precautions on the back before (Fill in this page) I ^ — — — — — — — — — I I ------ 491987 A7 B7 V. Description of the invention (5) The waveform is slightly asymmetric, and the frequency is the frequency of the frame 丨/ 2 of the second harmonic frequency. As mentioned above, the polarities of the characteristics of the thin film transistor are not completely symmetrical, making it extremely difficult to obtain a completely symmetrical waveform for all data voltages. Moreover, the waveform may be shifted due to changes in time, resulting in asymmetric waveforms. The frame frequency is usually 60 Hz d-8 5 Hz, and the second harmonic frequency is 30 Hz-4 3 Hz. The second sub-harmonic frequency portion appears to be flickering, resulting in a significant loss of the display quality. To avoid this, Japanese Patent Publication HEI 9-204159 discloses a method for preventing flicker by increasing the frame frequency to about twice. However, a small active-array-driven LCD device used in a conventional projection system has adopted a driver integrated molding structure using a polycrystalline silicon thin film transistor to avoid drastically reducing the pitch of the contacts of the driver LSI, as described above. The characteristics of polycrystalline silicon thin film transistors are far inferior to those of monocrystalline silicon transistors' and therefore have limitations in high-speed operation. Therefore, in the conventional small active-array driving liquid crystal display LCD device used in a projection system, the signal is converted into a multi-phase parallel signal by an analog sampling-and-holding circuit 4, as shown in FIG. 13, the operating frequency is reduced, and The signal is sent to a data driver on the LCD panel of the liquid crystal display. For example, when performing XGA (Extended Graphic Array) display, the video signal is divided into up to 12 phases per LCD device. The operating speed of the source data signal of the extended graphic array is located on the LCD panel of the LCD. The data driver on the side drops to W1 2. Therefore, in this case, in order to prevent flicker by increasing the frame frequency to twice, the video signal needs to be divided into 2 4 (= 12 X 2) phases, so that the paper size is applicable to China Standard (CNS) A4 specification (210 X 297 public love ^ 7 (Please read the precautions on the back before filling out this page) 訇 Printed clothes by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 0, · ϋ n I ϋ nn I ϋ k— ϋ n I n ϋ n ϋ i_i n 1 A7
經濟部智慧財產局員工消費合作社印製 491987 五、發明說明(6 ) 到”奴視頻傳送速率。結果,不幸地,不僅外加電路之規 格增大,液晶顯示器LCD面板之輸入接頭的連接數目亦增 加,掃描驅動器變複雜,導致良率降低。此外,若進行^ 框轉換驅動,則因爲寄生電容存在於該源極匯流排線與該 顯示像素之間,故縮小該儲存電容器之面積以增加鏡孔比 導致寄生電容之比例增加,而無法避免地發生牟話。此對 影像品質產生明顯之損壞。 另一態樣中’就電晶體之崩潰或耐壓及該數據驅動器之 能量消耗而言,由數據驅動器提供之顯示數據(視頻信號) 的%壓有所限制。因此,進行水平線轉換驅動時,因爲垂 直取向上相鄰像素間之電容導致電壓損失,而需要較高之 驅動電壓。即,施加於該液晶之驅動電壓不足。導致唯以 得到高反差比之問題,尤其是正常白色模式顯示下。 此外’該水平線轉換驅動具有以下問題,若該數據驅動 器係結構使得視頻信號藉由類比接頭…由該水平掃描電路· 心輸出控制…依序保持於該源極匯流排線之電容器中,則 執行之驅動方法係爲該視頻信號分成多相信號,之後於較 低頻率下並行地提供。即,該經分配之多相視頻信號一般 係藉由類比接頭同時抽樣。然而,當右邊及左邊像素間存 有電容性搞合時,同時抽樣之像素區段中及後續抽樣之像 素區段中相鄰像素之保持電位改變,而不利地以垂直線條 之方式表現該變化。 發明概述 因此,本發明之目的係提出一種液晶顯示器LCD裝置, -9 - 本紙張尺度適肝®國家標準(CNS)A4規格(210 X 297公爱) (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 491987 V. Invention description (6) to "Slave video transmission rate. As a result, not only the size of the external circuit is increased, but the number of input connectors of the LCD panel of the liquid crystal display is also increased. The scan driver becomes complicated, resulting in a decrease in yield. In addition, if the frame switching drive is performed, because the parasitic capacitance exists between the source bus bar and the display pixel, the area of the storage capacitor is reduced to increase the mirror hole. The ratio leads to an increase in the ratio of parasitic capacitance, which inevitably occurs. This causes significant damage to the image quality. In another aspect, 'in terms of the breakdown or voltage of the transistor and the energy consumption of the data driver, The% pressure of the display data (video signal) provided by the data driver is limited. Therefore, when driving horizontally, a higher driving voltage is required due to the voltage loss caused by the capacitance between adjacent pixels in the vertical orientation. That is, applying The driving voltage of the liquid crystal is insufficient, resulting in the problem of obtaining high contrast ratio, especially normal white In addition, the horizontal line conversion driver has the following problems. If the data driver structure makes the video signal through the analog connector ... controlled by the horizontal scanning circuit and the core output ... it is kept in the source bus line in order. In the capacitor, the driving method is implemented by dividing the video signal into polyphase signals and then providing them in parallel at a lower frequency. That is, the distributed polyphase video signal is generally sampled simultaneously through an analog connector. However, when When there is a capacitive coupling between the pixels on the right and left, the holding potentials of adjacent pixels in the simultaneously sampled pixel section and the subsequent sampled pixel section change, and this change is unfavorably represented by a vertical line. Therefore, the purpose of the present invention is to propose a liquid crystal display (LCD) LCD device. -9-This paper size is suitable for the liver ® National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page)
V 491987 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明( 其可同時實現高反差比及高鏡孔比,且可得到高品質顯示。 爲了達成前述目的,根據本發明第一態樣提出一種主動 陣列驅動式液晶顯示器LCD裝置,其中驅動器電路及顯示 區域係形成於一基板上,且其中該驅動器電路及顯示區域 中所包括之每個薄膜電晶體皆具有由多晶矽製得之主動層 ,其係藉由促進其結晶生長而形成,其中該驅動器電路操 作係基於時間,於約100赫茲或更高之圖框頻率下,將具有 相同極性之數據寫至整體單一 ·圖框螢幕的所有像素中,但 將具有不同極性之數據窝至彼此相鄰之不同圖框中。 使用此種配置,所使用之每個薄膜電晶體皆具有藉由促 進其結晶生長而形成之多晶矽,以作爲主動層。因此,該 薄膜電晶體具有約較使用一般多晶矽作爲主動層之薄膜電 晶體高兩倍之電子遷移率,故可於約6〇赫茲之正常圖框頻 率的兩倍速率下進行圖框轉換驅動。結果,彼此相鄰之像 素不會沿著該源極匯流排線產生橫向電場,防止反差比於 正常白色模式下因爲黑色顯示狀態下之漏光而降低。此外 ,即使數據信號之波型因爲數據電壓之不對稱、薄膜電晶 體特性之不對稱、數據電壓隨時間而變化或其他因素 得不對稱,最後發生二次分諧波頻率分量,該分諧波頻率 分量因爲於雙倍速度下之圖框驅動,故仍不致成爲閃爍。 實際上,於約100赫茲或更高圖框頻率下之圖框轉換驅動, 可產生如同於前述雙倍速度下藉圖框轉換驅動產製者的效 率。 此情況下,因爲雙倍速度圖框轉換驅動係藉著加速該驅 -10- (請先閱讀背面之注意事項再填寫本頁) I AW --------^ ---------I ----------------------- 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(8 ) 動為電路(操作而進行,故可在不、放大外加電路之規格、 不增加輸入接頭之連接數量、不使周邊驅動器電路複雜化 、或不增加成本上實現不閃爍之主動陣列 器LCD裝置。 h 換τ=,根據本發明,可省略遮光圖型而防止漏光,因 此得到高鏡孔比。因此,可提供高鏡孔比且不使反差比降V 491987 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (It can achieve high contrast ratio and high mirror-to-hole ratio at the same time, and can obtain high-quality display. In order to achieve the aforementioned purpose, according to the first aspect of the present invention An active matrix driving liquid crystal display LCD device is proposed, in which a driver circuit and a display area are formed on a substrate, and each thin film transistor included in the driver circuit and the display area has an active device made of polycrystalline silicon. Layer, which is formed by promoting its crystal growth, wherein the driver circuit operation is based on time, and writes data with the same polarity to the whole single frame screen at a frame frequency of about 100 Hz or higher. In all pixels, data with different polarities are nested in different frames next to each other. With this configuration, each thin film transistor used has polycrystalline silicon formed by promoting its crystal growth as Active layer. Therefore, the thin film transistor has about Double the electron mobility, so frame conversion can be driven at twice the normal frame frequency of about 60 Hz. As a result, adjacent pixels will not generate a lateral electric field along the source busbar , To prevent the contrast ratio from being reduced due to light leakage in the black display state in the normal white mode. In addition, even if the wave shape of the data signal is due to the asymmetry of the data voltage, the asymmetry of the characteristics of the thin film transistor, the change of the data voltage over time, or other The factor is asymmetric, and the second-order sub-harmonic frequency component finally occurs. The sub-harmonic frequency component does not flicker because it is driven by the frame at double speed. Actually, the frame is about 100 Hz or higher. The frame conversion drive at frequency can produce the same efficiency as the frame conversion drive driver at the aforementioned double speed. In this case, because the double speed frame conversion drive speeds up the drive by -10- ( (Please read the notes on the back before filling this page) I AW -------- ^ --------- I ----------------- ------ Printed A7 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Note (8) The operation is performed by a circuit (operation, so the active array can be realized without flickering, amplifying the specifications of the external circuit, increasing the number of input connectors, not complicating the peripheral driver circuit, or increasing cost. LCD device. H for τ =, according to the present invention, the shading pattern can be omitted to prevent light leakage, so a high mirror hole ratio is obtained. Therefore, a high mirror hole ratio can be provided without reducing the contrast ratio.
低及不閃爍、因此具有優越之顯示品質的示器LCD 裝置。 液晶顯示器LCD裝置中,該驅動器電路可包括數據驅動 器,該液晶顯示器LCD裝置可另外包括電屏蔽裝置,位於 -源極匯流排線與像素電極之間,該源極匯流排線將來自 數據驅動器之數據提供至該顯示區域的每個像素電極。 使:此種構造,藉由位於源極匯流排線與像素'電極間之 電屏蔽裝置’降低該源極匯流排線與像素電極間之電容效 應,以防止垂直串話。因此,防止影像品質大幅滑落。 液晶顯示器LCD裝置中,該驅動器電路可包括數據驅動 器,其進行點序驅動,藉以同時抽樣多個並行之數據。 於此種配置下,藉由該驅動器電路進行圖框轉換驅動可 於電流同時抽樣區段中抑制像素電極之電位變化,該像素 電極係與後續抽樣之像素區段接觸。因此,可防止該螢幕 上之條紋。 液晶顯示器LCD裝置中,顯示區段中像素之陣列間距約 25微米X25微米或更小。 此種構造下,於其中像素之陣列間距約25微米χ 25微米 11 - ^紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱)Low and flicker-free display LCD device with superior display quality. In the liquid crystal display LCD device, the driver circuit may include a data driver. The liquid crystal display LCD device may further include an electrical shielding device located between the -source busbar and the pixel electrode. The source busbar will come from the data driver. Data is provided to each pixel electrode of the display area. Make: With this structure, the capacitance effect between the source bus line and the pixel electrode is reduced by the electrical shielding device 'located between the source bus line and the pixel electrode to prevent vertical cross talk. Therefore, the image quality is prevented from slipping significantly. In a liquid crystal display (LCD) device, the driver circuit may include a data driver that performs dot-sequential driving, thereby sampling a plurality of parallel data at the same time. In this configuration, the frame circuit driving by the driver circuit can suppress the potential change of the pixel electrode in the current simultaneous sampling section, and the pixel electrode is in contact with the pixel section for subsequent sampling. Therefore, streaks on the screen can be prevented. In a liquid crystal display (LCD) device, an array pitch of pixels in a display section is about 25 μm × 25 μm or less. With this structure, the array pitch of the pixels is about 25 microns x 25 microns 11-^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love)
491987 經濟部智慧財產局員工消費合作社印製 A7 ------—____B7___ 五、發明說明(9 ) 或更小之高明晰度液晶顯示器LCD裝置中,像素之鏡孔比 增加,故顯示不閃爍之高反差比高品質影像。是故,本發 明得到一種可使用於投影系統而驅動器一體成型式之高品 質小型主動陣列驅動液晶顯示器LCd裝置。 、一具體實例中,進行該數據之並行化,以得到十二個經 並^化之數據。即,該並行化之進行方式係爲欲以數據驅 動器顯不之原始數據信號的點時鐘可設定於每個數據〗2百 萬赫兹或更高。 此種配置下,正常速度數據信號的點時鐘變成正常者 (6.25百萬赫茲)之約兩倍,於擴充圖型陣列顯示中,進行具 有1 2相顯影之雙倍速驅動。 根據本發明第二態樣’提出一種具有驅動器電路及顯示 區域之主動陣列驅動式液晶顯示器LCD裝置,其中 該驅動器電路操作係基於時間將具有相同極性之數據窝 至整體單-圖框螢幕之所有像素,而將具有不同極性之數 據窝至彼此鄰接之不同圖框,及 提供電容於彼此鄰接之像素電極間沿著該顯示區域中之 源極匯流排線之處,該電容係包括介於鄰接像素電極間之 電極間電容及/或因爲導電性遮光層與該鄰接像素電極重疊 所產生<電容,該導電性遮光層係連接於薄膜電晶體之汲 極,而配置於鄰接像素電極下層,其間夾置有絕緣膜。 此種構造中,進行圖框轉換驅動時,將對應於彼此鄰接 之像素電極而沿著該源極匯流排線之延伸取向的電容之電 壓,添加於由該驅動器電路所提供之數據電壓上,所產: -12- 本紙張尺度適財關家標準(CNS)A4規格(210 X 297公£3-- (請先閱讀背面之注意事項再填寫本頁)491987 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ---------- ____B7___ V. Description of Invention (9) or smaller High-definition liquid crystal display LCD device, the pixel aperture ratio of pixels increases, so the display is not Blinking high contrast ratio high quality image. Therefore, the present invention provides a high-quality small-sized active-array driving liquid crystal display (LCd) device that can be used in a projection system and the driver is integrally formed. In a specific example, the data is parallelized to obtain twelve merged data. That is, the parallelization is performed in such a manner that the dot clock of the original data signal to be displayed by the data driver can be set to 2 million Hz or more per data. In this configuration, the dot clock of the normal-speed data signal becomes about twice that of the normal one (6.25 megahertz). In the extended graphic array display, double-speed driving with 12-phase development is performed. According to the second aspect of the present invention, an active array driving liquid crystal display LCD device having a driver circuit and a display area is proposed, wherein the operation of the driver circuit is based on the time to nest data with the same polarity into all of the overall single-frame screen. Pixels, and data having different polarities are nested to different frames adjacent to each other, and a capacitor is provided between adjacent pixel electrodes along a source bus line in the display area, and the capacitor includes a space between adjacent pixels. The inter-electrode capacitance between the pixel electrodes and / or the < capacitance generated by the overlapping of the conductive light-shielding layer with the adjacent pixel electrode, the conductive light-shielding layer is connected to the drain of the thin film transistor and is disposed below the adjacent pixel electrode. An insulating film is interposed therebetween. In this structure, when the frame conversion driving is performed, the voltage of the capacitor corresponding to the pixel electrodes adjacent to each other and oriented along the extension of the source bus line is added to the data voltage provided by the driver circuit. Produced: -12- This paper size is suitable for financial standards (CNS) A4 (210 X 297 Kg £ 3-- (Please read the precautions on the back before filling this page)
' 一一口,I n .1 ·ϋ ϋ ·ϋ ί I a— l ϋ ϋ n I— I n m I I I I ·ϋ ϋ n ϋ ·ϋ I A7 B7 五、發明說明(1〇) 之電壓施加於該顯示區域中 習用液晶顯示器LCD裝置的電極。因此,可在低於 顯示器LCD裝置相同之愁數據下,得到與習用液晶 於液晶,以在不犧牲各像;=之驅動電壓施加 差比。 ^ <叙孔比的情況下,得到高反 結果,根據本發明,於正當 就薄膜電晶贿山& + η 吊白色模式顯示中,其中因爲 就厚膜㈣随朋潰電壓及能量之觀點 位準設限,使得施加於液晶之驅動電壓m 之堪動電壓經補償,而得到高反^匕欠成不足’该不足 像素電極間的間於其中延伸該源極匯 之長度的約15百分比或更:素線取向土 像素電極上所施加之電壓上添加充分之心屯:’以义; 藉由調整介於該像素電極間之間隔的簡;方法因:在:: 牲每個像素之鏡孔比的情況下得到高反差比。、 1源旋二實例中’介於彼此鄭接之像素電極間的電容--於 ::極排線延伸之取向上―介於不小於該像素電極所 百八:包括寄生電容-,0.5百分比但不大於ι〇 百分比 < 範圍内。 排因爲彼此鄭接之像素電極於該源極匯流 排奴伸(取向上的電容不低於該儲存電容之〇 5百分比, 故孩電容可充分地提供欲添加於該像素電極上所施加之電 =的電愿。此外,因爲介於像素電接間之電容不高於該 儲存電容之1G百分比,故該像素電接間電容之變化幾手不 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 χ 297公釐 13- ^1987 A7 B7'One bite, I n .1 · ϋ ϋ · ϋ ί I a— l ϋ I n I— I nm IIII · ϋ ϋ n ϋ · ϋ I A7 B7 V. The voltage of the invention (1〇) is applied to the The electrodes of a liquid crystal display (LCD) device are used in the display area. Therefore, under the same worry data as the LCD device of the display, the liquid crystal and the conventional liquid crystal can be obtained without sacrificing each image; the driving voltage application difference ratio. ^ In the case of the hole-to-hole ratio, a high-reflection result is obtained. According to the present invention, the thin film transistor crystal is displayed in the white mode, where the thickness of the thick film varies with the voltage and energy The viewpoint level is set to a limit so that the driving voltage m of the driving voltage m applied to the liquid crystal is compensated to obtain a high reflectance, which is insufficient. The length of the source sink between the pixel electrodes is approximately 15 Percentage or more: Add a sufficient heart to the voltage applied to the pixel electrode with a linear orientation: 'Yiyi; by adjusting the interval between the pixel electrodes; the method is due to: in: each pixel In the case of the mirror-to-hole ratio, a high contrast ratio is obtained. In the example of "source 1", the capacitance between the pixel electrodes connected to each other-in the direction of the extension of the electrode line-is not less than that of the pixel electrode: including parasitic capacitance-0.5% But not more than ι〇 percentage < range. Because the pixel electrodes that are connected to each other are connected to the source bus (the capacitance in the orientation is not less than 0.05% of the storage capacitor), the capacitor can sufficiently provide the electricity to be added to the pixel electrode. = The electricity willing. In addition, because the capacitance between the pixel electrical contacts is not higher than 1G percentage of the storage capacitor, the changes in the capacitance between the pixel electrical contacts are not as large as this paper. The Chinese standard (CNS) A4 specifications are applicable to this paper. (21〇χ 297 mm 13- ^ 1987 A7 B7
經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
衫響所添加之電壓。因此’將充分之電壓添加於該像素電 極上所施加之電壓上,而在不犧牲每個像素之鏡孔比的情 況下,得到高反差比。 可由以下描述明瞭本發明之其他目的、特色及優點。 圖式簡單説明 可由以下詳述及附圖更充分地明瞭本發明,該圖式僅供 作説明,因此不限制本發明,其中: 圖1係爲本發明液晶顯示器LCD裝置中像素所使用之薄膜 電晶體的主要部分之剖面圖; 圖2係爲使用圖i所示之薄膜電晶體形成之驅動器_積合面 板的方塊圖; 圖3A係爲圖2所示之驅動器積合面板的驅動所使用之視 頻信號波型之L3BUC係爲f用驅動器積合面板之 驅動所使用之視頻信號波型的圖; 圖4係爲顯示本發明液晶顯示器Lcd裝置中顯示像素部分 之配置的圖; 圖5係爲因爲該像素電極與該源極匯流排線間之電容,導 致垂直串話之説明圖; 圖6係爲顯示異於圖4之顯示像素部分的配置之圖; 圖7係爲顯示除圖4及6以外之顯示像素部分的配置之圖; 圖8係為一説明圖,其中藉著添加特定電壓於視與信 =壓所得之電壓係施加於圖7所示之顯示像的 素電極; I V & 圖9係爲顯示儲存電容器及其寄生電容之概念圖; --------------鐵--------訂------ C請先閱讀背面之注意事項再填寫本頁}The voltage added to the shirt. Therefore, a sufficient voltage is added to the voltage applied to the pixel electrode, and a high contrast ratio is obtained without sacrificing the mirror-to-hole ratio of each pixel. Other objects, features and advantages of the present invention will be apparent from the following description. Brief description of the drawings The present invention can be more fully understood by the following detailed description and the accompanying drawings, which are for illustration only and therefore do not limit the present invention. Among them: FIG. 1 is a film used for pixels in a liquid crystal display LCD device of the present invention. A cross-sectional view of the main part of the transistor; Figure 2 is a block diagram of the driver_integrated panel formed using the thin-film transistor shown in Fig. I; Figure 3A is used for the driver integrated panel shown in Fig. 2 The L3BUC of the video signal waveform is a diagram of the video signal waveform used by the driver integrated panel for the f driver; FIG. 4 is a diagram showing the configuration of the display pixel portion in the LCD device of the LCD of the present invention; Because the capacitance between the pixel electrode and the source bus line causes vertical crosstalk; FIG. 6 is a diagram showing a configuration of a display pixel portion different from that of FIG. 4; FIG. 7 is a diagram showing a configuration other than FIG. 4 FIG. 8 is a diagram showing the configuration of the display pixel portion other than 6; FIG. 8 is an explanatory diagram in which a voltage obtained by adding a specific voltage to the view and signal = voltage is applied to the pixel electrode of the display image shown in FIG. 7; IV & Figure 9 is a conceptual diagram showing the storage capacitor and its parasitic capacitance; -------------- Iron -------- Order ------ C Please read the back first Note before filling out this page}
1 n I 線丨#· 本紙張尺度適财_家標準(_CNS)A4規格 -14- 491987 發明說明(12) 圖1 〇係爲顯示鄭接像素電極 ,係爲顯示圖7所示之顯示像素二容的圖; 素電極間之耦合電容; 刀^ ’介於鄰接像 圖1 2係爲表示顯示像素部分之 均c直的圖,且古口 4 &、Α 圖4、6及7者之習用像素結構; 具有尺寸寺於 圖1 3係爲顯不習用主動陣列 平幻驅動式液晶顯 中驅動系統之結構的實例之圖; 圖14係爲顯示抽樣-及-保持電 和m ; 〈貫例的圖,圖13中 示器LCD裝置 總 經濟部智慧財產局員工消費合作社印製 圖15A、15B及15C係爲使用圖14之反_色抽樣 路之抽樣操作的説明圖; 7 圖1 6係爲顯示數據驅動器之路件的實例之圖· 圖17A及17B係爲概念圖,顯示像素電位相對於線轉換驅 動及圖框轉換驅動中之時間變化的空間分佈。 較佳具體實例詳述 下文將以附圖所説明之具體實例詳細描述本發明。 (第一具體實例) 如前文所述,多晶矽薄膜電晶體之特性遠遜於單晶矽電 晶體’因此於面速操作時具有限制。因此,此具體實例中 ,形成薄膜電晶體,其各具有一多晶矽主動層,藉著添加 Ni,Pt5 Sn,及Pd中之至少一種於非晶矽(a_Si)膜中,以 促進其結晶生長。之後,使用此等薄膜電晶體製造驅動器_ 積合面板,可得到較使用習用多晶矽薄膜電晶體之驅動器· 積合面板快兩倍或更快之操作速度,使圖框頻率升高約兩 及-保持電 且 -15- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) I ϋ «ϋ n n ϋ ϋ I m mm— kn n I ϋ 一 ϋ I n ϋ I I I n ϋ ϋ I ϋ ϋ ϋ n H ·ϋ I ϋ ϋ ι ϋ ϋ _ (請先閱讀背面之注音?事項再填寫本頁) 491987 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(13) 倍,以防止閃爍。 圖1係爲此具體實例之顯示像素部分中所使用之薄膜電晶 體的主要部分之剖面圖。此薄膜電晶體係由以下方法製得。 首先’ a - S i膜1 2係沉積於絕緣基板1 1的整體表面上。之 後’爲了使S i表面成爲親水性並控制表面性質,於該表面 上形成氧化物薄膜,並於其上層旋塗乙酸鎳水溶液。其次 ’固相暴晶係於600 C下進行約1 2小時,以使a - S i薄膜1 2 結晶成多晶Si。Si〇2薄膜沉積於多晶Si層上,而移除氧化 物及Si〇2薄膜,欲形成裝置之主動區域的部分除外。 其次,使用殘留之Si〇2薄膜作爲掩模,植入高濃度之p + 離子(於15仟電子伏特,5X1015厘米·2),之後於6〇〇。〇下進 行12-小時熱處理。之後,使用Si〇2薄膜作爲掩模,移除 該多晶Si薄膜的p+離子植入區域,之後移除Si〇2薄膜,之 後,si〇2薄膜u再沉積於整體多晶Si薄膜上。此外,於95〇 1含有鹽酸之氧化氛圍中進行約1小時之氧化過程,藉以由 該多晶Si薄膜12移除殘留金屬原子。其次,移除位於該多 晶Si薄膜12上之Si〇2薄膜及部分之多晶Si,以保留該多晶 Si欲製造裝置之主動區域的部分,同時移除該多晶y薄膜 I2之不必要部分。之後,使用與正常已知多晶矽薄膜電晶 體製造方法相同之方法,形成閘極氧化物13、閘極14及供 儲存電容器使用之共用線i 5,之後將p+離子及B+離子植二 該多晶si薄膜12中。此外,依序形成Si〇2薄膜及BpsG(^_ 磷矽酸鹽玻璃)平面化薄膜16、接觸孔17、金屬(Aisi)線 18、中間層絕緣體—包括siNx薄膜19及以〇2薄膜2〇、通孔 (請先閱讀背面之注意事項再填寫本頁) -·1111111 ·11111111 0^^ - - II - II - I - - - — — — — — — — — — — — — -16 -1 n I line 丨 # · This paper is suitable for financial use__Home Standard (_CNS) A4 Specification -14- 491987 Description of the Invention (12) Figure 1 〇 is for displaying the Zheng pixel electrode, it is for displaying the display pixel shown in Figure 7 The two-capacity diagram; the coupling capacitance between the prime electrodes; the knife ^ 'is located between adjacent images. Figure 12 is a graph showing the average c of the display pixel portion, and the four of the ancient mouth 4 &, A, 4, 6 and 7 The conventional pixel structure; the dimensions are shown in Fig. 1. 3 is a diagram showing an example of the structure of a driving system of an active-array flat-magic driving liquid crystal display; Fig. 14 is a diagram showing sampling-and-holding electricity and m; Figure 15 shows the LCD device printed in Figure 13. Intellectual Property Bureau of the Ministry of Economic Affairs and the Intellectual Property Bureau employee consumer cooperatives. Figures 15A, 15B, and 15C are explanatory diagrams of the sampling operation using the inverse-color sampling path of Figure 14; Fig. 17A and 17B are conceptual diagrams showing the path components of a data driver. Fig. 17A and 17B are conceptual diagrams showing the spatial distribution of the pixel potential with respect to time changes in a line conversion drive and a frame conversion drive. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to specific examples illustrated in the accompanying drawings. (First specific example) As mentioned above, the characteristics of polycrystalline silicon thin film transistors are far inferior to those of single crystal silicon transistors' and therefore have limitations in face-speed operation. Therefore, in this specific example, thin film transistors are formed, each of which has an active layer of polycrystalline silicon, and at least one of Ni, Pt5 Sn, and Pd is added to the amorphous silicon (a_Si) film to promote its crystal growth. After that, using these thin-film transistors to manufacture the driver _ integrated panel, you can get a driver that is twice or faster than the conventional polycrystalline silicon thin-film driver. The integrated panel can increase the frame frequency by about two and- Keep electricity and -15- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) I ϋ «ϋ nn ϋ ϋ I m mm— kn n I ϋ ϋ I n ϋ III n ϋ ϋ I ϋ ϋ ϋ n H · ϋ I ϋ ϋ ι ϋ ϋ ((Please read the note on the back? Matters before filling out this page) 491987 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (13) times, To prevent flicker. FIG. 1 is a cross-sectional view of a main part of a thin film transistor used in a display pixel portion of this specific example. This thin film transistor system was prepared by the following method. First, the 'a-Si film 12 is deposited on the entire surface of the insulating substrate 11. Thereafter, in order to make the Si surface hydrophilic and control the surface properties, an oxide thin film is formed on the surface, and a nickel acetate aqueous solution is spin-coated on the upper surface. Next, the solid-state crystal system is performed at 600 C for about 12 hours to crystallize the a-Si thin film 1 2 into polycrystalline Si. The SiO2 film is deposited on the polycrystalline Si layer, and oxides and the SiO2 film are removed, except for the portion where the active area of the device is to be formed. Next, using the remaining Si02 thin film as a mask, a high concentration of p + ions (at 15 仟 electron volts, 5 × 1015 cm · 2) was implanted, followed by 600. A 12-hour heat treatment was carried out. After that, using the SiO2 film as a mask, the p + ion implantation region of the polycrystalline Si film is removed, and then the SiO2 film is removed. After that, the SiO2 film u is deposited on the entire polycrystalline Si film. In addition, an oxidation process was performed in an oxidation atmosphere containing hydrochloric acid for about 1 hour, whereby the polycrystalline Si thin film 12 was used to remove residual metal atoms. Secondly, the SiO2 film and a portion of the polycrystalline Si on the polycrystalline Si film 12 are removed to retain a portion of the active region of the polycrystalline Si device to be manufactured, and at the same time the polycrystalline y film I2 is removed. The necessary part. After that, the gate oxide 13, gate 14 and the common line i 5 for the storage capacitor are formed by using the same method as that of the conventionally known polycrystalline silicon thin film transistor manufacturing method, and then p + ions and B + ions are implanted into the polycrystal. Si film 12. In addition, a SiO2 film and a BpsG (^ _ phosphosilicate glass) planarizing film 16, a contact hole 17, a metal (Aisi) wire 18, and an interlayer insulator are formed in this order. 〇 Through holes (Please read the precautions on the back before filling this page)-· 1111111 · 11111111 0 ^^--II-II-I---— — — — — — — — — — — -16-
491987 A7491987 A7
經濟部智慧財產局員工消費合作社印製 五、發明說明(14) 2 1、遮光或不透光薄膜2 2、中間層絕緣體2 3、像素接觸孔 2 4、及透明像素電極2 5。如此,完成了欲使用於此具體實 例之液晶顯示器LCD裝置中之驅動器及顯示區域中的薄膜 電晶體。 與遷移率約100 cm2/V · sec之習用高溫多晶矽薄膜電晶體 比較之下,此種方式所得之薄膜電晶體具有約2_2·5倍高之 遷移率。此外,如圖2所示,驅動器-積合面板29係使用針 對驅動器26,27及液晶顯示器Lcr)區域28所製之薄膜電晶 體製得。此情況下,圖3A所示於120赫茲之圖框速率下進 行之非間條掃描中,當視頻信號轉換成12相並徑信號且該 驅動器積合面板2 9於該原始視頻信號之頻率的1/6下操作 以進行擴充圖型陣列顯示時,該驅動器-積合面板2 9具有穩 定之操作,同時得到不具有任何閃爍之明亮、均勻顯示。〜 若爲使用習用兩溫多晶矽薄膜電晶體製得之驅動器_積合 面板,於圖3B所示60赫茲圖框速率下進行之非間條掃描^ ,當該視頻信號轉換成12-相並行信號且該驅動器-積合面 板於该原始視頻信號之頻率的丨/ ! 2下操作時,得到穩定之 操作。然而,如圖3 A所示,於圖框速率12〇赫茲下進行之 非間條掃描中,該驅動器-積合面板未操作或即使該驅動器 -積合面板進行操作,該驅動器電路之操作仍不穩定,導致 抽樣之時序錯誤,故無法得到正確之顯示。 如前文所述,此具體實例中,藉著添加Ni於該a_Si薄膜 12中以促進結晶生長,因此使卜“結晶成多晶^,而形成 王動層。結果,可得到電子遷移率約較習用高溫多晶薄膜 -------------鲁----- ---訂---------線丨----------------------- (請先閱讀背面之注意事項再填寫本頁) -17-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (14) 2 1. Light-shielding or opaque film 2 2. Interlayer insulator 2 3. Pixel contact hole 2 4. and transparent pixel electrode 25. Thus, the driver and the thin film transistor in the display area of the liquid crystal display LCD device to be used in this specific example are completed. Compared with a conventional high-temperature polycrystalline silicon thin film transistor with a mobility of about 100 cm2 / V · sec, the thin film transistor obtained in this way has a mobility that is about 2_2 · 5 times higher. In addition, as shown in Fig. 2, the driver-integrated panel 29 is obtained by using a thin-film transistor system made of the drivers 26, 27 and the LCD region 28. In this case, in the non-strip scanning performed at a frame rate of 120 Hz as shown in FIG. 3A, when the video signal is converted into a 12-phase parallel signal and the driver integrates the panel 29 to the frequency of the original video signal The driver-integrated panel 29 has stable operation when operating at 1/6 times for extended graphic array display, and at the same time, a bright and uniform display without any flicker. ~ For a driver_integrated panel made using a conventional two-temperature polycrystalline silicon thin film transistor, a non-strip scan at 60 Hz frame rate shown in Figure 3B ^, when the video signal is converted into a 12-phase parallel signal And when the driver-integrated panel is operated at the frequency of the original video signal, the stable operation is obtained. However, as shown in FIG. 3A, in the non-strip scanning performed at a frame rate of 120 Hz, the driver-integrated panel is not operated or the driver circuit operates even when the driver-integrated panel is operated. Unstable, resulting in sampling timing errors, so it cannot be displayed correctly. As mentioned above, in this specific example, Ni is added to the a_Si thin film 12 to promote crystal growth, so that the crystal "crystallizes into a polycrystal ^" to form a king moving layer. As a result, the electron mobility can be obtained approximately Conventional high-temperature polycrystalline film ------------- Lu ----- --- Order --------- Line 丨 ----------- ------------ (Please read the notes on the back before filling this page) -17-
491987491987
五、發明說明(15) 經濟部智慧財產局員工消費合作社印製 電晶體之遷移率高2·2·5倍的薄膜電晶體。因此,藉著製造 使用泫薄膜電晶體之驅動器-積合面板2 9,可得到較使用高 溫多晶薄膜電晶體之習用驅動器_積合面板高兩倍或更高之 操作頻率。 結果,使用此具體實例之驅動器_積合面板29,於圖框轉 換驅動模式中,該圖框頻率增加約兩倍以防止閃爍,因此 了件到南貝之顯示。此情況下,該圖框頻率之倍增係藉 著增加該數據驅動器26之速度而達成。因此,該圖』頻^ <倍增既未導致任何外加電路之規模放大,亦未使該水平 驅動器電路複雜化,故未降低良率,亦未增加成本。 此具體實例中,Ni添加該卜Si薄膜12中,以促進該多晶 矽薄膜之結晶生長。然而,本發明不限於此,添加Ni,pt, Sn及Pd中之至少一種,可促進該多晶矽薄膜的結晶生長。 此具體實例中,該a-Si薄膜12結晶成多晶Si之後,植入高 濃度p+離子,而進行熱處理,以移除所添加之Ni原子。或 該Ni原子之濃度可藉著例如使用鹽酸進行氧化而降低。 (第二具體實例) 此具m貝例中,薄膜電晶體各使用由多晶石夕製得之主動 層形成,其係藉著950°C或更高溫之氧化程序促進其結晶生 長而形成。之後,使用該薄膜電晶體製造驅動器_積合面板 ,得到較使用多晶矽薄膜電晶體之習用驅動器_積合面板快 兩倍或更多倍之操作速度,故該圖框頻率提高約兩倍,以 防止閃爍。 此具m實例t液晶顯示益LCD裝置的顯示像素部分中所 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 0------- — 訂---------^ IAW.------------------- (請先閱讀背面之注意事項再填寫本頁) -18- 491987 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(祀) 使用之各薄膜電晶體的主要部分具有圖j所示之剖面。該薄 膜電晶體係使用以下方法製造。注意以下描述使用與圖1相 同之參考編號。 首先,a-Si薄膜12係沉積於絕緣基板η之整體表面上, 之後於600 C進行熱處理歷經約1 2小時,以藉固相磊晶形成 多晶Si薄膜。之後,藉著於950。〇或更高溫之氧化氛圍中進 行氧化程序歷經約3 〇分鐘,促進多晶si薄膜之結晶生長。 其次,保留多晶Si薄膜12欲成爲裝置主動區域之部分,而 移除薄膜1 2不必要之部分。之後,使用與正常已知多晶矽 薄膜電晶體製造方法相同之方法,形成閘極氧化物i 3、閘 極14及供儲存電容器使用之共用線15,之後將p +離子及 B+離子植入該多晶Si薄膜12中。此外,依序形成以〇2薄膜 及BPSG平面化薄膜10、接觸孔17、金屬(八丨叫線^、中間 層絕緣體“包括SiNx薄膜I9及Si〇2薄膜2〇、通孔幻、遮光 或不透光薄膜22、中間層絕緣體23、像素接觸孔24、及透 明像素電極2 5。如此,完成了欲使用於此具體實例之液晶 顯示器LCD裝置中之驅動器及顯示區域中的薄膜電晶體。 與遷移率約100 cm2/V · see之習用高溫多晶矽薄膜電晶體 比較之下,此種方式所得之薄膜電晶體具有約2-2·5倍高之 遷移率。此外,如圖2所示,驅動器-積合面板29係使用針 對驅動器2 6,2 7及液晶顯示器LCD區域2 8所製之薄膜電晶 體製得。此情況下,圖3A所示於120赫茲之圖框速率下進 行之非間條掃描中,當視頻信號轉換成丨2相並徑信號且該 驅動器·積合面板2 9於該原始視頻信號之頻率的1 / 6下操作 -19- (請先閱讀背面之注意事項再填寫本頁) --------訂---- άφ----------------------- 491987 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(17) 以進行擴充圖型陣列顧子陆 、、 、、#& 項不時,孩驅動器-積合面板29具有稃 足(操作,同時得到不且古 ^ ―j不具有任何閃爍之明亮、均勾顯示。 务爲使用習用高溫多晶石々績 日夕薄膜笔晶體製得之驅動器-積合 面板,於圖3 B所示6 〇赫茲閽掘、占方 ’、 ▲、、、、 跡錄圖框速率下進行之非間條掃描中 ’ ©该視頻信號轉換成1 2 _如* a v、上 风12相並行信號且該驅動器-積合面 板於藏原始視頻信號之頻率的 須手的1/1 2下操作時,得到穩定之 操作。然而,如圖3 A所+,、人向,^ 斤不於圖框速率120赫茲下進行之 非間條掃描中,該驅動器·積合面板未操作或即使該驅動器 -積合面板進行操作,該驅動器電路之操作仍不穩定,導致 抽樣之時序錯誤,故無法得到正確之顯示。 如則又所述,此具體實例中,藉著添加川於該a_si薄膜 12中以促進結晶生長,因此使&七結晶成多晶si,而形成 主動層、结| ’可得到電子遷移率約較習用高溫多晶薄膜 電晶體I遷移率高2-2.5倍的薄膜電晶體。因此,藉著製造 使用該薄膜電晶體之驅動器_積合面板29,可得到較使用高 溫多晶薄膜電晶體之習用驅動器·積合面板高兩倍或更高之 操作頻率。 結果,使用此具體實例之驅動器_積合面板2 9,於圖框轉 換驅動模式中,該圖框頻率增加約兩倍以防止閃爍,因此 可得到高品質之顯示。此情況下,該圖框頻率之倍增係藉 著增加該數據驅動器26之速度而達成。因此,該圖框頻率 I倍增既未導致任何外加電路之規模放大,亦未使該水平 驅動器電路複雜化’故未降低良率,亦未增加成本。 如前文所述,此具體實例中,該多晶si薄膜係於95(rc* -20 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱V. Description of the invention (15) Thin film transistor with a mobility of 2.2.5 times higher than that of transistor printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, by manufacturing a driver-integrated panel 29 using a thin film transistor, an operating frequency that is twice or higher than that of a conventional driver using a high-temperature polycrystalline thin-film transistor_integrated panel can be obtained. As a result, using the driver_integrated panel 29 of this specific example, in the frame conversion driving mode, the frame frequency is increased by about two times to prevent flicker, so that the pieces are displayed to Nanbei. In this case, the multiplication of the frame frequency is achieved by increasing the speed of the data driver 26. Therefore, the frequency multiplication in the figure neither causes the scale of any external circuit to be enlarged, nor complicates the horizontal driver circuit, so the yield is not reduced, and the cost is not increased. In this specific example, Ni is added to the Si thin film 12 to promote crystal growth of the polycrystalline silicon thin film. However, the present invention is not limited to this. Adding at least one of Ni, pt, Sn, and Pd can promote the crystal growth of the polycrystalline silicon thin film. In this specific example, after the a-Si thin film 12 is crystallized into polycrystalline Si, a high concentration of p + ions is implanted and heat treatment is performed to remove the added Ni atoms. Or, the concentration of the Ni atom can be reduced by, for example, oxidation using hydrochloric acid. (Second Specific Example) In this example, the thin film transistors are each formed using an active layer made of polycrystalline stone, which is formed by promoting the crystal growth by an oxidation process at 950 ° C or higher. After that, the thin film transistor is used to manufacture the driver_integrated panel, and the operating speed is two or more times faster than the conventional driver_integrated panel using a polycrystalline silicon thin film transistor. Therefore, the frame frequency is increased by about two times. Prevent flicker. In this example, the paper size in the display pixel portion of the LCD device is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love). 0 ------- — Order ----- ---- ^ IAW .------------------- (Please read the notes on the back before filling this page) -18- 491987 A7 B7 Intellectual Property Bureau, Ministry of Economic Affairs Printed by the employee consumer cooperative V. Description of the invention (sacrifice) The main part of each thin film transistor used has a cross section as shown in Figure j. This thin film transistor system was manufactured using the following method. Note that the following description uses the same reference numbers as in Figure 1. First, an a-Si thin film 12 is deposited on the entire surface of the insulating substrate η, and then heat-treated at 600 C for about 12 hours to form a polycrystalline Si thin film by solid-phase epitaxy. After that, by 950. The oxidation process was performed in an oxidizing atmosphere of 0 ° C or higher temperature for about 30 minutes to promote the crystal growth of the polycrystalline Si film. Secondly, the portion of the polycrystalline Si film 12 that remains to be the active area of the device is retained, and the unnecessary portion of the film 12 is removed. After that, the gate oxide i 3, the gate 14, and the common line 15 for the storage capacitor are formed using the same method as that of the conventionally known polycrystalline silicon thin film transistor manufacturing method, and then p + ions and B + ions are implanted into the poly Crystalline Si thin film 12. In addition, a 0 2 thin film and a BPSG planarized thin film 10, a contact hole 17, a metal (eight lines), an intermediate layer insulator "including SiNx thin film I9 and Si 0 2 thin film 20, through hole magic, light shielding or The opaque film 22, the interlayer insulator 23, the pixel contact hole 24, and the transparent pixel electrode 25. In this way, the driver and the thin film transistor in the display area of the liquid crystal display LCD device to be used in this specific example are completed. Compared with the conventional high-temperature polycrystalline silicon thin film transistor with a mobility of about 100 cm2 / V · see, the thin film transistor obtained in this way has a mobility of about 2-2 · 5 times. In addition, as shown in Figure 2, The driver-integrated panel 29 is made using thin-film transistors for the drivers 26, 27 and the LCD area 28 of the LCD. In this case, FIG. 3A is performed at a frame rate of 120 Hz. In stripe scanning, when the video signal is converted into a 2-phase parallel signal and the driver / integrator panel 2 9 operates at 1/6 of the frequency of the original video signal -19- (Please read the precautions on the back first (Fill in this page) -------- Order ---- άφ ----------------------- 491987 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (17) to expand the pattern array Gu Zilu From time to time, the driver-integrated panel 29 has lame (operation, and at the same time, it is not too old ^ --j does not have any flickering bright, uniform display. It is necessary to use the conventional high temperature polycrystalline The driver-integrated panel made of Shi Jiji's thin-film pen crystals was used in the non-strip scanning at the 60 Hz digging, square, ', ▲ ,,,, and trace frame rates shown in Figure 3B. '© The video signal is converted into 1 2 _ such as * av, upwind 12-phase parallel signals, and the driver-integrated panel operates at 1/1 2 of the hands that hide the frequency of the original video signal, and obtains stable operation. However, as shown in Fig. 3A +, in the direction of orientation, the driver-integrated panel is not operated or the driver-integrated panel is operated during the non-strip scanning performed at a frame rate of 120 Hz. The operation of the driver circuit is still unstable, causing sampling timing errors, so it cannot be displayed correctly. As mentioned again, in this specific example, by adding Sichuan to the a_si thin film 12 to promote crystal growth, so that & seven crystallized into polycrystalline si, forming an active layer, junction | 'can get electrons A thin film transistor with a mobility about 2-2.5 times higher than that of a conventional high temperature polycrystalline thin film transistor I. Therefore, by manufacturing a driver using the thin film transistor_integrated panel 29, a higher temperature polycrystalline film can be obtained The conventional driver of the transistor-integrated panel has twice or higher operating frequency. As a result, using the driver_integrated panel 29 of this specific example, the frame frequency is increased by about two times in the frame-conversion driving mode. To prevent flicker, high-quality display can be obtained. In this case, the multiplication of the frame frequency is achieved by increasing the speed of the data driver 26. Therefore, the doubling of the frame frequency I has neither resulted in the enlargement of the scale of any external circuit nor complicated the horizontal driver circuit, so the yield has not been reduced, nor has the cost been increased. As mentioned above, in this specific example, the polycrystalline si film is based on 95 (rc * -20) This paper is sized for China National Standard (CNS) A4 (210 X 297)
五、 經濟部智慧財產局員工消費合作社印製 491987 A7 ------B7 —--------^ 發明說明(18) 更高溫下進行約3 0分鐘之氧化程序,以形成主動層。結果 ’得到遷移率較習用高溫多晶矽薄膜電晶體之遷移率高约 2 . - 2 · 5倍之薄膜電晶體。因此,使用該薄膜電晶體製造諸 驅動器-積合面板2 9時,可得到較使用高溫多晶矽薄膜電晶 體之習用驅動器-積合面板高兩倍或更高之操作頻率。 結果,使用此具體實例之驅動器-積合面板29時,於圖框 轉換驅動模式中,該圖框頻率升高約兩倍以防止閃爍,因 此可得到高品質之顯示。此情況下,該圖框頻率之倍增係 藉著增加該數據驅動器2 6之速度而進行。因此,該圖框頻 率之倍增既不導致任何外加電路之規模放大,亦不使該水 平驅動器電路複雜化,故亦不增加成本。 此具體實例中’該多晶S i薄膜係於950°C或更高溫下進行 氧化程序,以促進多晶S i薄膜之結晶生長。然而,本發明 不限於此,氧化過程中之溫度可約900°C或更高。 (第三具體實例) 此具體實例中,薄膜電晶體各使用由多晶矽製得之主動 層形成,其係藉著於含有無水〇2或水蒸氣之5大氣壓或更 高壓力氛圍中的高壓氧化程序,促進其結晶生長而形成。 之後,使用該薄膜電晶體製造驅動器-積合面板,得到較使 用多晶石夕薄膜電晶體之習用驅動器-積合面板快兩倍或^多 倍之操作速度,故該圖框頻率提高約兩倍,以防止閃燦。 此具體實例之液晶顯示器LCD裝置的顯示像素部分中所 使用之各薄膜電晶體的主要部分具有圖1所示之剖面。該薄 膜電晶體係使用以下方法製造。注意以下描述使用與圖i相 -21 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注音?事項再填寫本頁)V. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 491987 A7 ------ B7 ---------- ^ Description of the invention (18) The oxidation process is performed at a higher temperature for about 30 minutes to form Active layer. As a result, a thin film transistor having a mobility that is about 2.5 to 2.5 times higher than that of a conventional high-temperature polycrystalline silicon thin film transistor is obtained. Therefore, when the driver-integrated panel 29 is manufactured using the thin-film transistor, an operating frequency twice or higher than that of a conventional driver-integrated panel using a high-temperature polycrystalline silicon thin-film transistor can be obtained. As a result, when the driver-integrated panel 29 of this specific example is used, in the frame switching driving mode, the frame frequency is increased by about two times to prevent flicker, so that a high-quality display can be obtained. In this case, the doubling of the frame frequency is performed by increasing the speed of the data driver 26. Therefore, the doubling of the frame frequency of the figure does not lead to the enlargement of the scale of any external circuit, nor does it complicate the horizontal driver circuit, so it does not increase the cost. In this specific example, the polycrystalline Si film is subjected to an oxidation process at 950 ° C or higher to promote the crystal growth of the polycrystalline Si film. However, the present invention is not limited thereto, and the temperature during the oxidation may be about 900 ° C or higher. (Third Specific Example) In this specific example, each of the thin film transistors is formed using an active layer made of polycrystalline silicon, which is formed by a high-pressure oxidation process in an atmosphere of 5 atmospheres or higher containing anhydrous 02 or water vapor. To promote its crystal growth and formation. After that, the thin film transistor was used to manufacture a driver-integrated panel, and the operating speed was twice or ^ times faster than that of a conventional driver-integrated panel using a polycrystalline silicon thin film transistor. Therefore, the frame frequency was increased by about two times. Times to prevent flicker. The main part of each thin film transistor used in the display pixel portion of the liquid crystal display LCD device of this specific example has a cross section as shown in FIG. This thin film transistor system was manufactured using the following method. Note that the description below is similar to the figure i. -21-This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back? Matters before filling out this page)
一aJβ ϋ n ϋ n ·ϋ I I ·ϋ ϋ ϋ ϋ ϋ n I ϋ ϋ ϋ ·ϋ ^1 ·ϋ ϋ «ϋ i ϋ ϋ i^i I A7 B7 五、發明說明(19) 同之參考編號。 首先,a - S i薄膜1 2係沉積於絕緣基板丨丨之整體表面上, 之後於600 C進行熱處理歷經約1 2小時,以藉固相暴晶形成 多晶Si薄膜。之後,藉著於60(rC下於lx ι〇5帕司卡或更高 壓力之含有無水02或水蒸氣之高壓氛圍中進行高壓氧化程 序歷經約30分鐘,促進多晶Si薄膜之結晶生長。其次,保 留多晶S i薄膜1 2欲成爲裝置主動區域之部分,而移除薄膜 12不必要之部分。之後,使用與正常已知多晶矽薄膜電晶 體製造方法相同之方法,形成閘極氧化物1 3、閘極1 4及供 儲存電容器使用之共用線1 5,之後將p+離子及b+離子植入 孩多晶Si薄膜12中。此外,依序形成Si〇2薄膜及BpSG平面 化薄膜16、接觸孔17、金屬(AlSi)線18、中間層絕緣體— 包括SiNx薄膜19及Si〇2薄膜20、通孔2;!、遮光或不透光薄 膜22、中間層絕緣體23、像素接觸孔24、及透明像素電極 25。如此,完成了欲使用於此具體實例之液晶顯示器lcD 裝置中之驅動器及顯示區域中的薄膜電晶體。 與遷移率約100 cm2/V · sec之習用高溫多晶矽薄膜電晶體 比較之下,此種方式所得之薄膜電晶體具有約2_2·5倍高之 遷移率。此外,如圖2所示,驅動器-積合面板29係使用針 對驅動器2 6,2 7及液晶顯示器LCD區域2 8所製之薄膜電晶 姐製得。此情況下,圖3 A所示於120赫茲之圖框速率下進 仃I非間條掃描中,當視頻信號轉換成丨2相並徑信號且該 驅動器-積合面板2 9於該原始視頻信號之頻率的1Z 6下操作 以進行擴充圖型陣列顯示時,該驅動器-積合面板29具有穩 -22- (請先閱讀背面之注咅?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 0--------訂---------線----------------------- 491987 A7 ^' ---------一 五、發明說明(20) —- 定之操作,同時得到不具有任何閃燦之明亮、均勾顯示。 若爲使用習用高溫多晶碎薄膜電晶體製得之驅動器-積人 面板,、於圖3B所示6〇赫兹圖框速率下進行之非間條掃描中 ,當該視頻信號轉換成12_相並行信號且該驅動器_積合面 板於該原始視頻信號之頻率的1/12下操作時,得到穩定之 操作。,然而’如H3A所示,於圖框速率12()赫兹下進行之 非間條掃描中,該驅動器·積合面板未操作或即使該驅動器 -積合面板進行操作,該驅動器電路之操作仍不穩定,導致 抽樣之時序錯誤,故無法得到正確之顯示。 如前文所述,此具體實例中,該多晶^薄膜於⑴一 2卡或更高壓力之含有無水〇2或水蒸氣之高壓氛圍中進行 向壓氧化程序,以形成主動層。結果,可得到電子遷移率 約較習用高溫多晶薄膜電晶冑之遷移率高2_25倍的薄膜電 晶體。因此,藉著製造使用該薄膜電晶體之驅動器-積合= 板29,可仵到較使用高溫多晶薄膜電晶體之習用驅動器-積 合面板向兩倍或更高之操作頻率。 因此,使用此具體實例之驅動器·積合面板29,於圖框轉 換,動模式中,該圖框頻率增加約兩倍以防止閃燦,因此 可得到高品質之顯示。此情況下,該圖框頻率之倍增係藉 著增加該數據驅動器26之速度而達成。因此,該圖^頻^ (倍增既未導致任何外加電路之規模放大,亦未使該水平 驅動器電路複雜化,故未降低良率,亦未增加成本。 u此具體實例中,該多晶Si薄膜係於1 χ 1〇5帕司卡或更高 壓力 <含有無水〇2或水蒸氣之高壓氛圍中進行氧化程序, -23- 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 χ 297公釐) -------------# (請先閱讀背面之注意事項再填寫本頁) 訂---- 經濟部智慧財產局員工消費合作社印製 •線Φ----------------------- A7 B7 五、發明說明( 晶Μ膜之結晶生長。然而,本發明不限於此 壓力氛圍中完〇2或水蒸氣之5大氣壓或更高 (第四具體實例) 部^ 、〜此具肢貫例之液晶顯示器LCD裝置中顯示像素 :二。此具體實例中,使用於像素之薄膜電晶體係 %叩組例7^,其藉著使用多晶矽一如第一至第三且 體實例般藉促進並社曰吐玉士、 ρ ^ 二w夕薄膜%晶體之兩倍速度。圖4中,遮光圖型—可使 方去形成一未形成於介於供像素之儲存電容器使用 勺/、用、、泉3 1與閘極匯流排線3 2間之間隔内,使光可通經該 間隔。圖4中’參考編號33係表示接觸孔,35係表示没極 土(寫入)使用之金屬圖型,36表示像素接觸孔,且π表示 像素電極。 /、有 '述結構之顯示像素部分中的像素間距係爲丨8微米 XI8微米,而鏡孔比係約55百分比。另一方面,具有與圖 1 2相同尺寸之像素結構之習用液晶顯示器LCD裝置的鏡孔 比係約4 2百分比。 此具體實例之液晶顯示器LCD裝置係由以下驅動方法驅 動。即,於此具體實例之液晶顯示器]LCD裝置中,該圖框 轉換驅動係正常圖框頻率之兩倍或更高的操作頻率下進行 。例如於擴充圖型陣列顯示中,當該視頻信號分成12相且 並行地提供時,該視頻信號之每數據片段之點時鐘頻率係 V»又足t 12 · 5百萬赫4,其係爲7 〇赫兹正常圖框速率下之6 2 5 24 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------mN--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明(22) 百萬赫炫的兩倍(=7 5百萬赫茲/丨2 )。此情況下,已知7 5 百萬赫炫之頻率係爲擴充圖型陣列顯示中圖框速率爲7 0赫 么么之視頻傳送速率0 因此’藉著進行圖框轉換驅動,將具有相同極性之電壓 =加於鄰接之像素,以防止發生逆轉之電場,且防止於正 系白色模式下於黑色顯示狀態下發生漏光,而導致反差比 降低。因此’避免反差比降低之因素,及滿足高反差比之 均勻顯示。 此丨目況下’圖框頻率係爲14〇赫茲,其係爲正常圖框頻率 7 〇赫炫之兩倍。因此,即使因爲數據電壓之不對稱、薄膜 電晶體特性之不對稱、數據電壓之時間變化或其他因素使 得數據信號之波型變得不對稱,導致二次分諧波頻率(1/2 頻率)分I,但該分諧波頻率分量之頻率仍約7〇赫茲。因此 ,孩分諧波頻率分量並未形成閃爍。就此言之,於14〇赫茲 之圖框頻率下操作,當然未發現閃爍。而且,於100赫茲之 車义低頻率下未產生問題。然而,當該圖框頻率降低至8 0赫 茲時,發生輕微之閃爍。此種情況多少損壞顯示品質,唯 未到達無法實際應用之程度。 由前述因素得知,實際應用之圖框頻率的下限於此具體 實例中係定義爲約100赫茲。1〇〇赫茲之圖框頻率係爲習用 高溫多晶矽薄膜電晶體無法達成之數値,而作爲防止該顯 π W負損壞之標準。然而,略低於該100赫茲之圖框頻率亦 涵蓋於本發明中,因此,使用,,約100赫茲”之表示方法。此 情況不僅在具體實例中得到成立,在前述第一至第三具體 25. (請先閱讀背面之注意事項再填寫本頁) --------^--------------------------------- 經濟部智慧財產局員工消費合作社印製 491987 A7 ------— B7__ 五、發明說明(23) ' 實例及以下描述之第五及第六具體實例亦成立。 另-方面’進行習用水平線轉換驅動時,於顯示電極邊 緣上或附近發,逆傾斜功能區域,其中液晶分子於相反取 向上想高或抬高。而且’因爲彼此鄰接之像素間存在沿著 孩源極匯流排線之強逆轉電場,故產生其中液晶分子未完 全麵高之區域。因此,於正常白色模式中,功能區域邊界 及其中液晶分子未完全翹高之區域於黑色顯示狀態下發生 漏光,導致反差比大幅降低。 使用習用高溫多晶矽薄膜電晶體製得之驅動器_積合面板 I情況下,若進行穩定操作之水平線轉換驅動,於正常白 色模式之黑色顯示狀態下,液晶功能區域邊界及其中液晶 分子未完全魅高之區域,因爲彼此鄰接之像素電極附近沿 該圖型垂直取向上之逆轉電場,導致於廣大範圍内發生漏 光。爲避免鏡孔比降低,儲存電容器使用之共用線及閘極 匯流排線一般係提供於該漏光發生區域上。儘管如此,但 若此等線路附近之廣大範圍内未提供遮光,仍將降低反差 比。尤其,因爲儲存電容器使用之共用線及閘極匯流排線 之間存在廣大之漏光區域,故其間不形成遮光薄膜時,將 大幅降低反差比。 此具體實例之驅動器-積合面板使用薄膜電晶體,其各具 有藉著促進其結晶生長所形成之多晶石夕。因此,可進行一 般圖框頻率約7 0赫茲之兩倍速度下的圖框轉換驅動。該圖 框轉換驅動未導致彼此鄰接像素間沿著該源極匯流排線產 生橫向電場,防止在正常白色模式下於黑色顯示狀態下發 -26- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) A7 B7 五、 發明說明(24) 經濟部智慧財產局員工消費合作社印製 生反差比觉損。是故,可在省略遮光圖型下得到高鏡孔比 此外’可藉著於兩倍圖框頻率下進行驅動而防止閃爍。 則文描述中’每數據之點時鐘頻率係設定於12.5百萬赫茲 ’以使70水平圖框速率之擴充圖型陣列顯示的速度加倍。 然而,本發明不限於前述頻率。此外,於擴充圖型陣列 XGA中轉換成12相可變化及調整,先決條件爲成本及性能 容許。 (第五具體實例) 前述具體實例中,進行兩倍速度之圖框轉換驅動,以防 止閃爍。結果,產生某些下述特別不發生於習用水平線轉 換驅動中的問題。 即,該圖框轉換驅動中,該源極匯流排線與該像素電極 間存在寄生電容。尤其是小型主動陣列驅動式液晶顯示器 LCD裝置諸如使用於投影系統中者,因爲該像素尺寸係υ 微米X 25微米或較小,故若欲確定該鏡孔比,則該儲存電 谷器t面積典法增加,而孩像素電極與該源極匯流排線間 所提供之間隔亦然。結果,該像素電極與該源極匯流排線 之間的電容値相對於該儲存電容器變大。 之後,如圖5所示,於完全寫至該第n列像素電極之時鐘 點、之後的時間,因爲該第η列像素電極與該第以亍源極匯 流排線之間的電容,(第η列,第让行)像素電位於第(η+ι) 及第k行數據的後續列之電位的影響下改變。是故,若爲圖 框轉換驅動,產生發生_話及顯示品質降低=問題了 =二 言之,若爲水平轉換驅動,因爲第k行數據中第n列電位及 --------訂---------線-φτ (請先閱讀背面之注意事項再填寫本頁) -27- 491987 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(25) 第(n+1)列電位之極性相反,其影響平衡至可忽略程度。 ,圖6係示意此具體實例液晶顯示器LCD裝置,顯示像素部 分〈配置。此具體實例中’使用具有習用多晶碎薄膜電晶 體之兩倍速度一藉著具有使用促進結晶生長所形成之多晶 矽作爲主動層而達成一的薄膜電晶體作爲像素用之薄膜電 晶體(形成於閘極匯流排線44與源極匯流排線42之交點上) ,如同第一至第三具體實例。由金屬或其他導體所製且具 有靜電屏蔽功能之遮光圖型層41(同等於圖〗中之遮光薄膜 22)係提供於該源極匯流排線42上層及像素電極“之邊緣 4分下層,其間夾置有中間層絕緣體(同等於圖i中之中間 層絕緣體23)。參考編號43係表示供儲存電容器使用之业 用電極,45表示接觸孔,46表示通孔,〇表示金屬圖型了 而4 8表示像素接觸孔。 具有前述結構之顯示部分中的像素間距係爲18微米χ 18 Τ米,而鏡孔比係約53百分比,其對應於問極匯流排線Ο 則共儲存電容器用之共用電極43間之^圖型層Ο的量小 於弟四具體實例。另-方面,具有與圖4所示相同尺寸之 結構的習用液晶顯示器LCD裝置之鏡孔比係約42百分比。’、 該源極匯流排線42與|素電極49間《電 刀-AJβ ϋ n ϋ n · ϋ I I · ϋ ϋ ϋ ϋ ϋ n I ϋ ϋ ϋ · ϋ 1 ϋ ϋ ϋ ϋ ϋ i ϋ ϋ i ^ i I A7 B7 V. Description of the invention (19) Same reference number. First, the a-Si thin film 12 is deposited on the entire surface of the insulating substrate 丨, and then heat-treated at 600 C for about 12 hours to form a polycrystalline Si thin film by solid-phase bursting. Thereafter, by performing a high-pressure oxidation process at 60 ° C. in a high-pressure atmosphere containing anhydrous 02 or water vapor at 1 × 5 Pascal or higher pressure for about 30 minutes, the crystal growth of the polycrystalline Si film is promoted. Secondly, the poly Si Si film 12 is reserved to be a part of the active area of the device, and the unnecessary part of the thin film 12 is removed. After that, the gate oxide is formed using the same method as that of the conventionally known poly silicon thin film transistor manufacturing method. 1 3. Gate 14 and common line 15 for storage capacitor, and then p + ions and b + ions are implanted into the polycrystalline Si film 12. In addition, a Si02 film and a BpSG planarization film 16 are sequentially formed. , Contact hole 17, metal (AlSi) wire 18, intermediate layer insulator-including SiNx film 19 and SiO2 film 20, through hole 2;!, Light-shielding or opaque film 22, intermediate layer insulator 23, pixel contact hole 24 And transparent pixel electrode 25. In this way, the driver and thin film transistor in the liquid crystal display lcd device to be used in this specific example are completed. The conventional high-temperature polycrystalline silicon thin film transistor with a mobility of about 100 cm2 / V · sec crystal In comparison, the thin-film transistor obtained in this way has a mobility that is about 2_2 · 5 times higher. In addition, as shown in FIG. 2, the driver-integrated panel 29 uses the driver 26, 27, and the liquid crystal display LCD. It is made by the thin film transistor produced in area 28. In this case, as shown in Fig. 3A, at the frame rate of 120 Hz, the non-strip scanning is performed. When the video signal is converted into a 2-phase parallel signal When the driver-integrated panel 29 is operated at 1Z 6 of the frequency of the original video signal for extended graphic array display, the driver-integrated panel 29 has stable -22- (please read the note on the back first) ? Please fill in this page again) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 0 -------- Order --------- Line ------------- ---------- 491987 A7 ^ '--------- Fifth, the description of the invention (20) --- At the same time, the bright, uniform display without any flashes. For a driver-man-made panel made using a conventional high-temperature polycrystalline chip transistor, in a non-strip scan at 60 Hz frame rate shown in FIG. 3B, when the video signal is converted to 12 _Phase parallel signal and the driver_integrated panel gets stable operation when operating at 1/12 of the frequency of the original video signal. However, 'as shown in H3A, it is performed at a frame rate of 12 () Hz In non-strip scanning, the driver / integrated panel is not operated or even if the driver-integrated panel is operated, the operation of the driver circuit is still unstable, causing sampling timing errors, so it cannot be displayed correctly. As described, in this specific example, the polycrystalline thin film is subjected to a compressive oxidation process in a high-pressure atmosphere containing anhydrous 02 or water vapor at a pressure of 1-2 kcal or higher to form an active layer. As a result, a thin film transistor having an electron mobility of about 2 to 25 times higher than that of a conventional high-temperature polycrystalline thin film transistor can be obtained. Therefore, by manufacturing a driver-integrated circuit using the thin-film transistor = board 29, the operating frequency can be doubled or higher than that of a conventional driver-integrated panel using a high-temperature polycrystalline thin-film transistor. Therefore, using the driver-integrated panel 29 of this specific example, in the frame conversion, the frame frequency is increased approximately twice to prevent flicker in the moving mode, so a high-quality display can be obtained. In this case, the multiplication of the frame frequency is achieved by increasing the speed of the data driver 26. Therefore, the figure ^ frequency ^ (multiplication does not cause the scale of any external circuit to be enlarged, nor does it complicate the horizontal driver circuit, so the yield is not reduced, and the cost is not increased. U In this specific example, the polycrystalline Si The film is oxidized in a high pressure atmosphere containing 1 x 105 Pascal or higher < containing anhydrous 02 or water vapor. -23- This paper size applies Chinese National Standard (CNS) A4 specification (21〇 χ 297 mm) ------------- # (Please read the notes on the back before filling out this page) Order ---- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs • Line Φ ----------------------- A7 B7 V. Description of the invention (Crystal growth of crystalline M film. However, the present invention is not limited to completion in this pressure atmosphere. 02 Or 5 atmospheres or more of water vapor (fourth specific example), ^, ~ This is an example of a liquid crystal display LCD device with a limb display pixel: 2. In this specific example, the thin film transistor system used for the pixel% 叩Group Example 7 ^, which uses polycrystalline silicon as the first to third examples to promote the union and development of jade, ρ ^ two thin film% crystals Speed. In Figure 4, the light-shielding pattern can be used to form a space that is not formed within the interval between the use of the storage capacitor for the pixel, the capacitor, the spring, and the gate bus. Light can pass through this interval. In Fig. 4, 'reference number 33 represents a contact hole, 35 represents a metal pattern used for polar soil (write), 36 represents a pixel contact hole, and π represents a pixel electrode. / 、 有The pixel pitch in the display pixel portion of the above structure is 8 micrometers by 8 micrometers, and the mirror hole ratio is about 55 percent. On the other hand, the mirror of a conventional LCD device with a pixel structure of the same size as that of FIG. 12 The hole ratio is about 4 2%. The liquid crystal display LCD device of this specific example is driven by the following driving method. That is, in the liquid crystal display of this specific example] LCD device, the frame conversion drive is twice the normal frame frequency. Or higher operating frequency. For example, in the extended graphic array display, when the video signal is divided into 12 phases and provided in parallel, the dot clock frequency of each data segment of the video signal is V »and t 12 · 5 megahertz 4, which is 6 at a normal frame rate of 70 Hz. 2 5 24 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------ mN -------- Order --------- line (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 A7 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative. V. Invention Description (22) Double megahertz (= 75 megahertz / 丨 2). In this case, it is known that the frequency of 75 megahertz is an extended pattern array. In the display, the frame rate is 70 Hz, and the video transmission rate is 0. Therefore, by driving the frame conversion, a voltage with the same polarity = is applied to adjacent pixels to prevent the reversed electric field and prevent In the white mode, light leakage occurs in the black display state, resulting in a decrease in contrast ratio. Therefore, 'a factor for lowering the contrast ratio and a uniform display satisfying a high contrast ratio are avoided. In this case, the frame frequency is 14 Hz, which is twice the normal frame frequency of 70 Hz. Therefore, even if the asymmetry of the data voltage, the asymmetry of the characteristics of the thin film transistor, the time variation of the data voltage, or other factors make the waveform of the data signal asymmetry, resulting in the second subharmonic frequency (1/2 frequency) Point I, but the frequency of this sub-harmonic frequency component is still about 70 Hz. Therefore, the flicker of the sub-harmonic frequency components does not form. In this regard, operating at a frame frequency of 14 Hz, of course, no flicker was found. In addition, no problems occurred at low frequencies of 100 Hz. However, when the frame frequency was reduced to 80 Hz, a slight flicker occurred. In this case, the display quality is damaged to a certain extent, but it has not reached a level where it cannot be practically used. It is known from the foregoing factors that the lower limit of the frame frequency for practical applications is limited to about 100 Hz in this specific example. The frame frequency of 100 Hz is a frequency that cannot be achieved with conventional high-temperature polycrystalline silicon thin film transistors, and serves as a standard to prevent the negative π W negative damage. However, a frame frequency slightly lower than the 100 Hz is also included in the present invention. Therefore, the expression method of "about 100 Hz" is used. This situation is not only established in specific examples, but also in the foregoing first to third specific 25. (Please read the notes on the back before filling this page) -------- ^ -------------------------- ------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 491987 A7 -------- B7__ V. Description of Invention (23) 'Examples and the fifth and sixth specific examples described below are also established. On the other hand, when the conventional horizontal line conversion drive is performed, it is issued on or near the edge of the display electrode, and the function region of reverse tilt, in which the liquid crystal molecules want to rise or rise in the opposite orientation. The strong reversal of the electric field of the source bus line results in a region where the liquid crystal molecules are not completely high. Therefore, in the normal white mode, the functional region boundary and the regions where the liquid crystal molecules are not completely raised raise light leakage in the black display state. , Resulting in a significant reduction in contrast ratio. Using conventional high temperature polycrystalline silicon thin film electricity Crystal-made driver _ In the case of the integrated panel I, if the horizontal line conversion drive for stable operation is performed, in the black display state of the normal white mode, the boundary of the liquid crystal functional area and the area where the liquid crystal molecules are not completely high, because they are adjacent to each other The reversed electric field near the pixel electrode along the vertical orientation of the pattern causes light leakage to occur in a wide range. In order to avoid the reduction of the ratio of the aperture to the mirror, the common line and gate bus line used by the storage capacitor are generally provided in the light leakage area Above all. However, if no shading is provided in a wide area near these lines, the contrast ratio will still be reduced. Especially, because there is a large light leakage area between the common line used by the storage capacitor and the gate bus line, When the light-shielding film is not formed, the contrast ratio will be greatly reduced. The driver-integrated panel of this specific example uses a thin-film transistor, each of which has a polycrystalline stone formed by promoting its crystal growth. Therefore, a general picture frame can be performed Frame conversion drive at twice the speed of about 70 Hz. The frame conversion drive does not cause A lateral electric field is generated between the adjacent pixels along the source bus line to prevent it from being transmitted in a black display state in a normal white mode. -26- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------- Order --------- line (please read the notes on the back before filling this page) A7 B7 V. Description of the invention (24) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Generate contrast contrast perceptual loss. Therefore, a high mirror aperture ratio can be obtained by omitting the shading pattern. In addition, it can be prevented from flickering by driving at twice the frame frequency. In the description of this article, the clock frequency of each data point It is set at 12.5 megahertz 'to double the speed of the expanded pattern array display at 70 horizontal frame rates. However, the present invention is not limited to the aforementioned frequencies. In addition, 12 phases can be changed and adjusted in the extended graphic array XGA. The prerequisites are cost and performance allowance. (Fifth specific example) In the foregoing specific example, the frame switching drive at twice the speed is performed to prevent flicker. As a result, some of the problems described below do not occur particularly in the conventional horizontal line conversion drive. That is, in the frame conversion driving, there is a parasitic capacitance between the source bus line and the pixel electrode. Especially the small active-array-driven liquid crystal display LCD device, such as those used in projection systems, because the pixel size is υ micrometers X 25 micrometers or smaller, so if you want to determine the ratio of the mirror hole, the area of the storage valley Codes are increased, as is the spacing provided between the pixel electrode and the source busbar. As a result, the capacitance 値 between the pixel electrode and the source bus bar becomes larger relative to the storage capacitor. Then, as shown in FIG. 5, at the clock point of the n-th column of the pixel electrode and the time thereafter, because of the capacitance between the n-th column of the pixel electrode and the third source bus, Column (n, Row) pixels are changed under the influence of the potential of the (n + ι) th and k-th rows of data. Therefore, if it is a frame conversion drive, the occurrence of _ words and display quality degradation = problem = in other words, if it is a horizontal conversion drive, because the potential of the nth column in the k-th row of data and ------- -Order --------- Line-φτ (Please read the notes on the back before filling out this page) -27- 491987 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (25) The polarity of the (n + 1) th column potential is opposite, and its influence is balanced to a negligible degree. Fig. 6 illustrates a liquid crystal display LCD device of this specific example, and the display pixel portion is <arranged. In this specific example, 'two times the speed of a conventional thin-film chip with conventional polycrystalline silicon is used.-A thin-film transistor formed by using polycrystalline silicon that promotes crystal growth as an active layer is used as a thin-film transistor for a pixel (formed in At the intersection of the gate bus line 44 and the source bus line 42), as in the first to third specific examples. The light-shielding pattern layer 41 (equivalent to the light-shielding film 22 in the figure) made of metal or other conductors and having an electrostatic shielding function is provided on the upper layer of the source bus bar 42 and the edge of the pixel electrode, which is divided into four layers. An intermediate layer insulator is interposed therebetween (equivalent to the intermediate layer insulator 23 in Fig. I). Reference number 43 denotes an industrial electrode for a storage capacitor, 45 denotes a contact hole, 46 denotes a through hole, and 0 denotes a metal pattern. And 4 8 represents a pixel contact hole. The pixel pitch in the display portion with the aforementioned structure is 18 micrometers x 18 T meters, and the mirror hole ratio is about 53%, which corresponds to the interrogation bus line. It is used for storage capacitors. The amount of the pattern layer 0 between the common electrodes 43 is smaller than that of the fourth embodiment. On the other hand, the mirror hole ratio of the conventional LCD device with the same size structure as that shown in FIG. 4 is about 42%. The source busbar 42 and the | electrode 49
之電位結合於特定電位而減輕或舒=: 話實際上完全無法辨識。 T 此具體實例之液晶顯示器LCD裝置,如同第四 =擴充圖型陣列腦顯示中,於14〇赫茲下進行圖框賴 驅動,其係爲70赫茲正常圖框頻率之兩 J货。猎耆進行圖框The potential is reduced or relieved in combination with a specific potential =: words are virtually unrecognizable. T The liquid crystal display LCD device of this specific example is the same as in the fourth example of the extended pattern array brain display, and the frame is driven at 14 Hz, which is two J goods of the normal frame frequency of 70 Hz. Falconry frame
本紙張尺度目家鮮(CNS)A4^格⑵G -----------------線 (請先閱讀背面之注意事項再填寫本頁) -28· 491987 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(26) 轉換驅動,將具有相同極性之電壓施加於鄰接像素,以防 止逆轉電%之發生,於正常白色模式下,於黑色顯示狀態 下防止漏光·-導致反差比降低—之發生。因此,避免反差 比降低之因素,而在保持高鏡孔比下滿足高反差比之均勻 顯示。 此情況下,圖框頻率係爲14〇赫茲,其係爲正常圖框頻率 7 0赫炫之兩倍。因此,即使因爲數據電壓不對稱、薄膜電 晶體特性不對稱、數據電壓之時間變化或其他因素而使數 據信號之波型變成不對稱,導致二次分諧波頻率(1/2頻率) 分量,但茲分諧波頻率分量之頻率仍約7 〇赫茲。因此,該 分諧波頻率分量未產生閃爍。此外,藉著遮光圖型層41之 功能,源極匯流排線42與像素電極49間之電容效應降低, 而防止電壓串話。 另方面,進行習用水平線轉換驅動時,於顯示電極邊 緣上或^近發生逆傾斜功能區域,其中液晶分子係於反方 向上纽高或抬高。而且,因爲彼此鄰接像素間沿該源極匯 流排線上存在有強逆轉電場,故產生其中液晶分子未完全 魅高之區域。因此,於正常白色模式中,於黑色顯示:: 下,在功能區域邊界及其中液晶分子未完全翹高之區域中 產生漏光,導致反差比大幅降低。 若爲使用習用高溫多晶矽薄膜電晶體之驅動器_積合面板 ,則在正常白色模式的黑色顯示狀態下,具有穩定操作之 水平線轉換驅動於液晶功能區域邊界及其中液晶分子未+ 全翹高之區域中導致漏光’即使是其中具有靜;:蔽功: ---------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) -29 491987The size of this paper is CNS A4 ^ G⑵G ----------------- line (Please read the precautions on the back before filling this page) -28 · 491987 Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative A7 V. Description of the invention (26) Conversion drive, applying a voltage of the same polarity to adjacent pixels to prevent the occurrence of reverse electricity%, in the normal white mode, and in the black display state Light leakage-leading to a decrease in contrast ratio-occurs. Therefore, the factor of lowering the contrast ratio is avoided, and a uniform display with a high contrast ratio is maintained while maintaining a high mirror ratio. In this case, the frame frequency is 14 Hz, which is twice the normal frame frequency of 70 Hz. Therefore, even if the waveform of the data signal becomes asymmetric due to the asymmetry of the data voltage, the characteristics of the thin-film transistor, the time variation of the data voltage, or other factors, resulting in the second harmonic frequency (1/2 frequency) component, However, the frequency of the sub-harmonic frequency component is still about 70 Hz. Therefore, the sub-harmonic frequency component has no flicker. In addition, by the function of the light-shielding pattern layer 41, the capacitance effect between the source bus line 42 and the pixel electrode 49 is reduced, and voltage crosstalk is prevented. On the other hand, when the conventional horizontal line switching drive is performed, a reverse tilt function region occurs near or near the edge of the display electrode, where the liquid crystal molecules are raised or raised in the opposite direction. Moreover, since there is a strong reversing electric field along the source bus line between pixels adjacent to each other, a region in which the liquid crystal molecules are not fully enchanted is generated. Therefore, in the normal white mode, the display in black:: Under the boundary of the functional area and the area where the liquid crystal molecules are not completely raised, light leakage occurs, resulting in a significant reduction in contrast ratio. If it is a driver_integrated panel using a conventional high-temperature polycrystalline silicon thin film transistor, in the black display state of the normal white mode, the horizontal line with stable operation is driven at the boundary of the liquid crystal functional area and the area where the liquid crystal molecules are not + fully raised Caused by light leakage 'even if it has static ;: shielding work: --------------------- order --------- line (read first Note on the back, please fill out this page) -29 491987
經濟部智慧財產局員工消費合作社印制衣 之遮光圖型層係提供於該源極匯流排線上的像素結構亦然 。結果,大幅降低反差比。若遮蔽漏光區之光線以防止漏 光,則大幅降低鏡孔比。 此具體實例之驅動器_積合面板使用薄膜電晶體,其各具 有藉由促進其結晶生長而形成之多晶矽以作爲主動層。因 此,於擴充圖型陣列XGA顯示中,該圖框轉換驅動可於140 赫錄下進行,其係爲正常圖框頻率70赫茲之兩倍速率。因 此,除了藉由進行圖框轉換驅動而防止鄰接像素間因逆轉 電場而導致之漏光之外,亦藉著於140赫茲之圖框頻率下進 行驅動或操作而滿足防止閃爍之要求。 此外,此具體實例中,具有靜電屏蔽功能之遮光圖型層 41係提供於源極匯流排線42與各像素電極49之間。因此, 將遮光圖型層41之電位結合於特定電位,可舒緩介於該源 極匯流排線42與像素電極49間之電容的效應,以防止垂直 串話。 簡5 <,此具體實例之配置消除幾乎所有介於該源極匯 流排線42與像素電極49間之電容的效應。因此,即使該像 素尺寸係爲25微米X 25微米或更小,該鏡孔比仍可在不增 加像素電極4 9 -源極匯流排線42電容相對於該儲存電容之 値的情況下得到確定。即,可輕易得到可顯示高品質、高 明晰度影像的小型主動陣列驅動式液晶顯示器LCD裝置, 其像素間距約18微米X 18微米,而係投影系統的最佳選擇。 '(弟π具體實例) 如前文所述,就數據驅動電路之電晶體崩潰電壓及能量 -30- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) (請先閱讀背面之注意事項再填寫本頁) --------訂---------線· 491987 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(28) 消耗之觀點而言,數據驅動器所提供之顯示數據(視頻信號 )之電壓中有所限制。因此,當於主動陣列驅動式液晶顯示 器LCD裝置中進行水平線轉換驅動時,較不利地於該液晶 上施加不充分之驅動電壓,使得尤其難以於正常白色模式 顯示中達到高反差比。 此具體實例中,針對此項問題之解答,係於彼此鄰接之 像素間沿該源極匯流排線提供介於該儲存電容之〇 5至1 〇 百分比範圍内的電容。因此進行兩倍速率之圖框轉換驅動。 圖7係示意此具體實例液晶顯示器lcd裝置之顯示像素部 分的配置。此具體實例中,如同前述第一至第三具體實例 ’具有藉著促進結晶生長而形成之多晶石夕作爲主動層且具 有έ用多晶石夕薄膜電晶體之兩倍速度的薄膜電晶體係使用 於像素,如同第一至第三具體實例。之後,經由閘極匯流 排線5 4彼此鄰接之像素電極5 1,5 2係經成形及陣列化,使 其對邊係彼此保持特定距離d。該特定距離d係爲該像素電 極5 1沿源極匯流排線5 9延伸取向之寸的1 5百分比或較小之 長度。如此’可設定介於鄰接像素電極5丨,5 2間之電容, 以充分得到將詳述於下文之附加電壓Δν。參考編號5 3係表 示儲存電容器,5 5係表示接觸孔,5 6係表示通孔,5 7係表 示金屬圖型,而58係表示像素接觸孔。 具有前述結構之顯示部分中的像素間距係爲丨8微米χ i 8 械米’而鏡孔比係約5 3百分比。另一方面,具有與圖1 2所 π相同尺寸之像素結構的習用液晶顯示器LCD裝置的鏡孔 比係約4 2百分比。 (請先閱讀背面之注意事項再填寫本頁) 訂---------線- -31 -The shading pattern layer of the printed clothing printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is also the pixel structure provided on the source bus line. As a result, the contrast ratio is greatly reduced. If the light in the light leakage area is shielded to prevent light leakage, the mirror-to-hole ratio is greatly reduced. The driver_integrated panel of this specific example uses a thin film transistor, each of which has polycrystalline silicon formed by promoting its crystal growth as an active layer. Therefore, in the extended pattern array XGA display, the frame conversion drive can be performed at 140 Hz recording, which is twice the normal frame frequency of 70 Hz. Therefore, in addition to preventing the leakage of light caused by the reversal of the electric field between adjacent pixels by performing frame conversion driving, the requirement of preventing flicker is also met by driving or operating at a frame frequency of 140 Hz. In addition, in this specific example, a light-shielding pattern layer 41 having an electrostatic shielding function is provided between the source bus line 42 and each pixel electrode 49. Therefore, combining the potential of the light-shielding pattern layer 41 with a specific potential can alleviate the effect of the capacitance between the source bus line 42 and the pixel electrode 49 to prevent vertical crosstalk. 5 < The configuration of this specific example eliminates almost all the effects of the capacitance between the source bus line 42 and the pixel electrode 49. Therefore, even if the pixel size is 25 micrometers X 25 micrometers or less, the mirror aperture ratio can still be determined without increasing the pixel electrode 49-source bus line 42 capacitance relative to the storage capacitor. . That is, a small active-array-driven LCD device capable of displaying high-quality, high-definition images can be easily obtained. The pixel pitch is about 18 micrometers by 18 micrometers, and it is the best choice for projection systems. '(Brother π specific example) As mentioned above, the voltage and energy of the transistor breakdown of the data driving circuit -30- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) (Please read the back first Please note this page before filling in this page) -------- Order --------- line · 491987 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention (28) Consumption From a viewpoint point of view, the voltage of the display data (video signal) provided by the data driver is limited. Therefore, when horizontal line conversion driving is performed in an active matrix driving liquid crystal display LCD device, it is disadvantageous to apply an insufficient driving voltage to the liquid crystal, making it particularly difficult to achieve a high contrast ratio in a normal white mode display. In this specific example, the answer to this question is to provide a capacitance between the pixels adjacent to each other along the source bus line within a range of 0.5 to 10 percent of the storage capacitance. Therefore, the frame conversion drive of the double speed is performed. Fig. 7 is a diagram showing the configuration of the display pixel portion of the LCD device of this specific example. In this specific example, as in the first to third specific examples described above, a thin film transistor having a polycrystalline crystal formed by promoting crystal growth as an active layer and having a twice the speed of a polycrystalline silicon film transistor The system is applied to pixels, as in the first to third specific examples. After that, the pixel electrodes 5 1, 5 2 adjacent to each other via the gate bus line 54 are shaped and arrayed so that their opposite sides are kept at a specific distance d from each other. The specific distance d is a length of 15 percent or less of an inch of the pixel electrode 51 extending along the source bus line 59. In this way, the capacitance between the adjacent pixel electrodes 5 丨, 52 can be set to fully obtain the additional voltage Δν which will be described in detail below. The reference number 5 3 indicates a storage capacitor, 5 5 indicates a contact hole, 5 6 indicates a through hole, 5 7 indicates a metal pattern, and 58 indicates a pixel contact hole. The pixel pitch in the display portion having the foregoing structure is 8 micrometers x 8 micrometers' and the mirror hole ratio is about 53 percent. On the other hand, the mirror hole ratio of a conventional liquid crystal display LCD device having a pixel structure of the same size as π in FIG. 12 is about 42%. (Please read the notes on the back before filling this page) Order --------- line- -31-
經濟部智慧財產局員工消費合作社印製 如第四及第五具體實例所示,此具體實例之液晶顯示器 LCD裝置於擴充圖型陣列XGA顯示中,於14〇赫茲上進行圖 框轉換驅動,其係爲7 0赫茲之正常圖框頻率的兩倍速度: 藉著進行圖框轉換驅動,防止於正常白色模式下於顯 示狀態下發生漏光…導致反差比降低。此外,藉著將圖^ 頻率設定於140赫茲而防止閃爍。 若爲水平轉換驅動,則欲施加於像素電極5〗之有效電壓 相對於自該數據驅動器(未示)提供之顯示數據電壓變2, 故該反差比降低。 一 相反地,進行圖框轉換驅動時,如前述般地於像素電極 51,52間提供相對於儲存電容器53之電容(包括液晶與像 素電極51所產生之寄生電容)具有適當之大小的電容,而於 第η列像素電極5丨提供一電壓,其係藉著將式(1)所示之特 定電壓△ V添加於由該數據驅動器所提供之顯示數據(視頻 k號)的電壓V數據而形成,如圖8所示: △V - V 數據(P-p)xCpp(Y)/(Cs+Clc+Csd+Cpp(Y)+Cgd).·· ( 1 ) 具體吕之,V數據(P_P)係表示第(n + 1 )列像素電極的電位 變化,唯於圖8中,V數據(P-P)係表示爲該數據驅動器所提 供之顯示數據電壓之最大及最大尖峰間的電壓値。然而, 因爲孩顯示數據係於圖8中之固定位準下於圖框中轉換,故 7D全不景> 響將V數據(P-P)視爲該顯示數據電壓之最大尖峰與 最小尖峰間的電壓値。此外,如圖9所示,Cpp( γ)係爲介 於鄰接像素電極51,52間之電容,。係爲儲存電容器53 之電容,Clc係爲液晶之電容,Csd係爲介於源極匯流排線 -32- 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) '--- --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制衣 491987 五、發明說明(3〇) 59與該像素電極51間之寄生電容,而㈣係爲介於閘核匯 流排線54與像素電極51間之寄生電容。即,式之分母 (cs+Clc+Csd+Cpp(Y)+Cgd)係爲儲存電容器53及其寄生=容 之總和。如式(1)可理解,當Cpp(Y)具有適當^於 (Cs+Clc+Csd+Cgd)之値的値時,可得到大的△ v値。 、 更具體的説明使用第n列像素電極添加Δν。例如,若將 具有正極性之電壓施加於第_像㈣極,則具有自極性之 電壓係保持於該第(η+1)列像素電極上,直至將具有正極 性之電壓施加於第(η+1)列像素電極。因此,第㈣像素電 極疋電位係以經由該Cpp(Y)添加於該正極性侧《取向移動 。而且,當將具有負極性之電壓施加於第―像素電極時, 該第η列像素電極之電位則係以相同方式但向著負電位側端 移動。 此具體實財,如0 1G所示,介於該鄰接像素電極η, 52間之電容Cpp(Y)( = Cpp(Y)i+Cpp(Y)2)相料儲存電容 器53(電容。具有相對大之耦合電容,因爲介於該鄰接像 素電極51,52間之距離小。詳言之,Cpp(Y)係約^,而 (CS+ClC+CSd+CPP(Y) + Cgd)係約 2〇fFe 結果,針對於 V 數據 (P-P) = 5伏特得到約250毫伏特之附加電壓Δν。 、,結果:若此具體實例之液晶顯示器LCD裝置使用與習用 液晶顯7F器LCD裝置相同之液晶材料及相同之構件參數(諸 如定向薄膜、定向取向、構件厚度等),則此具體實例之液 晶顯示器LCD裝置可提供顯示,反差比與電壓較習用液晶 顯7F器LCD裝置低約250毫伏特之顯示數據相同。 餐--------tr---------f释----------------------- (請先閱讀背面之注意事項再填寫本頁) -33-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as shown in the fourth and fifth specific examples. The liquid crystal display LCD device of this specific example is in the extended graphic array XGA display, and is driven by frame conversion at 14 Hz. It is twice as fast as the normal frame frequency of 70 Hz: By performing frame conversion driving, light leakage in the display state in normal white mode is prevented ... resulting in a decrease in contrast ratio. In addition, flicker is prevented by setting the picture frequency to 140 Hz. In the case of horizontal conversion driving, the effective voltage to be applied to the pixel electrode 5 becomes 2 relative to the display data voltage provided from the data driver (not shown), so the contrast ratio is reduced. On the contrary, when the frame conversion driving is performed, as described above, a capacitance having a proper size is provided between the pixel electrodes 51 and 52 relative to the capacitance of the storage capacitor 53 (including the parasitic capacitance generated by the liquid crystal and the pixel electrode 51). A voltage is provided to the pixel electrode 5 in the n-th column by adding the specific voltage ΔV shown in formula (1) to the voltage V data of the display data (video k number) provided by the data driver. Formation, as shown in Figure 8: △ V-V data (Pp) xCpp (Y) / (Cs + Clc + Csd + Cpp (Y) + Cgd) .... (1) Specifically, V data (P_P) Is the potential change of the pixel electrode in the (n + 1) th column. Only in FIG. 8, V data (PP) is the voltage between the maximum and maximum spikes of the display data voltage provided by the data driver. However, because the display data of the child is converted in the frame at the fixed level in FIG. 8, 7D is completely down. V data (PP) is regarded as the difference between the maximum peak and the minimum peak of the display data voltage. Voltage 値. In addition, as shown in FIG. 9, Cpp (?) Is a capacitance between the adjacent pixel electrodes 51, 52. It is the capacitance of storage capacitor 53, Clc is the capacitance of liquid crystal, and Csd is the source bus bar -32- This paper size is applicable to China National Standard (CNS) A4 (21〇x 297 mm) '- --------- Order --------- line (please read the precautions on the back before filling this page) Printed clothing for the staff consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 491987 V. Invention Description (30) The parasitic capacitance between the pixel electrode 51 and the pixel electrode 51 is a parasitic capacitance between the gate bus bar 54 and the pixel electrode 51. That is, the denominator of the formula (cs + Clc + Csd + Cpp (Y) + Cgd) is the sum of the storage capacitor 53 and its parasitic = capacity. As can be understood from the formula (1), when Cpp (Y) has a 适当 appropriately 适当 of (Cs + Clc + Csd + Cgd), a large Δv 値 can be obtained. For more specific explanation, Δν is added using the pixel electrode in the nth column. For example, if a voltage with a positive polarity is applied to the _th pixel, a voltage with a self-polarity is maintained on the (η + 1) th pixel electrode until a voltage with a positive polarity is applied to the (η +1) column of pixel electrodes. Therefore, the potential of the third pixel electrode is added to the positive polarity side via the Cpp (Y). Moreover, when a voltage having a negative polarity is applied to the -th pixel electrode, the potential of the n-th column pixel electrode is moved in the same manner but toward the negative potential side end. As shown in FIG. 1G, this specific property is a capacitor Cpp (Y) (= Cpp (Y) i + Cpp (Y) 2) between the adjacent pixel electrodes η, 52, and a phase storage capacitor 53 (capacitance. Has The relatively large coupling capacitance is because the distance between the adjacent pixel electrodes 51, 52 is small. In detail, Cpp (Y) is about ^, and (CS + ClC + CSd + CPP (Y) + Cgd) is about As a result of 20fFe, an additional voltage Δν of about 250 millivolts was obtained for V data (PP) = 5 volts. Result: If the liquid crystal display LCD device of this specific example uses the same liquid crystal as the conventional liquid crystal display 7F device LCD device Materials and the same component parameters (such as orientation film, orientation orientation, component thickness, etc.), the liquid crystal display LCD device of this specific example can provide a display with a contrast ratio and voltage lower than the conventional liquid crystal display 7F device LCD device by about 250 millivolts. The data shown is the same. Meal -------- tr --------- f Explanation ----------------------- (Please (Please read the notes on the back before filling out this page) -33-
本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱 491987 經濟部智慧財產局員工消費合作社印 A7 _____________B7__ 五、發明說明(31) ^^ ^ 一如前文所述,此具體實例之驅動積合面板使用各具有 $由促進其結晶生長而形成多晶料爲主動層的薄膜電晶 體。因此,㈣充圖型陣列XGA顯示巾,圖框轉換驅動; 、;赫炫下進行,其係7 0赫茲正常圖框頻率的兩倍速率。 因此’除防止因爲進行圖框轉換驅動而於鄰接像素間產生 逆轉電場所致之漏光之外’藉著於14〇赫兹圖框頻率下進 驅動或操作,以防止閃爍。 此外,此具體實例中,沿著源極匯流排線59之延伸取向 經由閘極匯流排線54彼此鄰接之像素電極51,52係於特定 間隔d下排成陣列,該間隔d係爲該像素電極”之長度的。 百刀比或更小。因此,當該像素間距係爲前述之1 8微米X 18微米時,可於鄰接像素間得到約1 fF之電容Cpp(Y),以 於該像素電極5 1上施加一電壓,其係藉著添加約25〇毫伏特 I電壓於5伏特之顯示數據最大尖峰_至_最小尖峰電壓所得。 結果,根據此具體實例,於液晶上施加充分之驅動電壓 ,以於正常白色模式顯示中得到高反差比,而不犧牲該像 素之鏡孔比。尤其,該像素尺寸愈大,此效果愈大。於正 苇微〜術中,在2 0微米-3 0微米或較小之間距的像素尺寸 下,該像素間隔係設定於約2微米-3微米。此條件下,該源 極匯流排線之延伸取向上,像素間隔縮小至5百分比_丨5百 分比,得到適當附加之電位,得到藉由該驅動方法改善之 鏡孔比。當然,使用大於前述範圍之像素亦可產生該種效 果’而可達成此具體實例之效果。此外,根據此具體實例 ’可同時得到低驅動電壓及高反差比。通常極難藉由改善 -34- 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) --------訂---------線—赢 (請先閱讀背面之注意事項再填寫本頁) _ ^1 ϋ ·ϋ ϋ ϋ I ϋ n ϋ a— I ·1 ϋ ϋ n ϋ I ϋ ϋ · 491987 經濟部智慧財產局員工消費合作社印製 A7 -----______ 五、發明綱(32) ^' 液晶材料而降低驅動電壓。尤其,因爲驅動電壓降低盥液 晶之可信度係具有交換關係,故此種像素結構所產生之驅 動電壓降低效果極大,因爲可避免液晶之可信度問題。 此具體實例中,藉由將鄰接像素電極51,52間之距離設 定於該像素電極51之長度的15百分比或更小,該鄰接像= 電極5 1,5 2間之電容相對於儲存電容器5 3之電容c &得到 適當之値。然而,當該像素尺寸較大時使得像素間存=大 間隔時,、或當儲存電容53之電容Cs値高時,連接於薄膜電 晶體60之汲極線61的金屬層之導電性遮光層。係與像素= 極5 1及其鄰接像素電極52同時重疊,其間夾置有絕緣薄$ (未示),如圖7及Η所示。利用遮光層62與各鄰接像素電 極5 1,52之重疊,可於該鄰接像素電極”,52間得到2 大之電容Cpp( Y)。 此具體實例中,介於鄰接像素電極5 1,$ 2間之電容 Cpp( Y )係視需要地介於不低於該儲存電容器5 3之電容◦ $ 的〇·5百分比但不高於1〇百分比之範園内。此: Cpp(Y)低於該儲存電容器53之電容Csw〇 5百分比,=盔 法針對顯示數據之電壓v數據得到充分之附加電壓Δν。而= ,使用較該儲存電容器53之電容(^大1〇百分比之電容 CPP(Y),像素電極51,μ間之電gCpp(Y)變化導致:: 電壓AV之變化,最後顯示出液晶透光度之波動。 下又係藉實施例描述一種情況,其中主動陣列驅動式液 晶顯示器LCD裝置之數據驅動器的結構係藉水平掃描電路 <輸出控制,以類比開關將視頻信號依序保持於該源極匯 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公釐) — 訂---------線 (請先閱讀背面之注意事項再填寫本頁) -35- 491987 A7 經濟部智慧財產局員工消費合作社印5衣 五、發明說明(33) 流排線之電容中,其中該驅動係使用一種方法進行,其中 f頻信號係於傳送頻率降低下分成多相信號,之後並行地 提供,即點序驅動之多點即時抽樣驅動方法,圖13中總和 1 2 (其中n係爲即時抽樣數目)。圖1 4顯示驅動系統之實 例,具有兩個抽樣-及-保持電路72,73,使用於&(紅色) 、G(綠色)及b(藍色)之每種顏色,其中僅代表性地出示針 對於R顏色之數據驅動器74。 二來自D/A轉換器7 1之R、G&B輸出的每個顏色類比視頻 仏號中,R類比視頻信號係輸入於該抽樣_及_保持電路72 :73。心後,如圖15Α·15(:所示,該類比信號係藉兩個抽 樣-及-保持電路72,73由6個點抽樣,總共12點,並保持 12點之周期。之後,該信號係自該抽樣_及_保持電路72, 73以1 2個並行數據的形式輸出,並提供至R色數據驅動器 7斗。該R色數據驅動器74中之12個並行數據係由十二類比 開關76同時轉送至十二個源極匯流排線77,該開關係與來 自水平掃描電路75衍生之掃描信號脈衝同步開啓及關閉, 由移位暫存器執行,如圖1 6所示。 之後,重複前述操作。該數據驅動器之操作係依此方式 進行。如前文所述,於多點同時抽樣驅動方法中,該抽樣 操作係於一區段上完成,即,取多條線作爲一區段。 如同前述多點同時抽樣驅動方法中採用多條線路(即多個 像素)作爲一區段,基於區段進行抽樣操作時,若採用水平 線轉換驅動,則產生電容性耦合之問題,即彼此鄰接之像 素間沿著該閘極匯流排線存有槁合性電容器C 〃,匚〃,目寸 -36- 本紙張尺度適用中國國家標準(Cns)A4規格(210 X 297公釐) -11 H ϋ (請先閱讀背面之注意事項再填寫本頁) -I- n βί 訂 線 A7This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 Gongai 491987) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _____________B7__ V. Description of the invention (31) ^^ ^ As mentioned above, The driving integrated panel uses thin-film transistors each having a polycrystalline material as an active layer formed by promoting its crystal growth. Therefore, the XGA display array is filled with a picture frame and driven by frame conversion; It is twice the normal frame frequency of 70 Hz. Therefore, 'except to prevent the leakage of light caused by the reversal of the electrical field between adjacent pixels due to the frame conversion drive', it is driven at a frame frequency of 14 Hz. Or, to prevent flicker. In addition, in this specific example, the pixel electrodes 51, 52 adjacent to each other along the gate bus line 59 via the gate bus line 54 are arranged in an array at a specific interval d. The interval d is the length of the pixel electrode. The ratio is 100 or less. Therefore, when the pixel pitch is 18 micrometers X 18 micrometers as described above, about 1 fF can be obtained between adjacent pixels. The capacitor Cpp (Y) is obtained by applying a voltage to the pixel electrode 51, which is obtained by adding a voltage of about 25 millivolts I to a maximum voltage of 5 volts of display data. As a result, according to this In a specific example, a sufficient driving voltage is applied to the liquid crystal to obtain a high contrast ratio in a normal white mode display without sacrificing the pixel aperture ratio of the pixel. In particular, the larger the pixel size, the greater the effect. Yu Zhengwei In the micro-operation, the pixel interval is set at about 2 micrometers to 3 micrometers at a pixel size of 20 micrometers to 30 micrometers or less. Under this condition, the source bus line is extended in the orientation. The pixel interval is reduced to 5% _5% to get the appropriate additional potential and get the mirror hole ratio improved by this driving method. Of course, using pixels larger than the aforementioned range can also produce this effect ', and this specific example can be achieved In addition, according to this specific example, a low driving voltage and a high contrast ratio can be obtained at the same time. It is usually extremely difficult to improve -34- This paper size applies the Chinese National Standard (CNS) A4 specification (210 χ 2 97mm) -------- Order --------- line-win (please read the notes on the back before filling this page) _ ^ 1 ϋ · ϋ ϋ ϋ I ϋ n ϋ a— I · 1 ϋ ϋ n ϋ I ϋ 49 491987 Printed by A7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs -----______ V. Outline of Invention (32) ^ 'Liquid crystal material reduces driving voltage. Especially, because The reliability of the driving voltage reduction liquid crystal has an exchange relationship, so the driving voltage reduction effect produced by this pixel structure is extremely great, because the reliability of the liquid crystal can be avoided. In this specific example, by adjoining the pixel electrode 51, The distance between 52 is set to 15% or less of the length of the pixel electrode 51. The adjacency image = the capacitance between the electrodes 5 1, 5 2 with respect to the capacitance c & of the storage capacitor 5 3 is obtained appropriately. However, when the size of the pixel is large, so that pixel-to-pixel storage = large interval, or when the capacitance Cs of the storage capacitor 53 is high, the conductive light-shielding layer of the metal layer connected to the drain line 61 of the thin film transistor 60 . It is overlapped with the pixel = pole 51 and its adjacent pixel electrode 52 at the same time, with an insulating thin layer (not shown) interposed therebetween, as shown in FIGS. 7 and Η. By using the overlap of the light shielding layer 62 and each adjacent pixel electrode 51, 52, a large capacitance Cpp (Y) can be obtained between the adjacent pixel electrodes 52, 52. In this specific example, between the adjacent pixel electrodes 51, The capacitance Cpp (Y) between 2 is within the range of not less than 0.5% of the storage capacitor 53 but not higher than 10% as needed. This: Cpp (Y) is lower than The percentage of the capacitance Csw05 of the storage capacitor 53 = the helmet method to obtain a sufficient additional voltage Δν for the voltage v data of the display data. And =, use a capacitance CPP (Y greater than 10% of the capacitance of the storage capacitor 53 (^ ), The change in the electrical gCpp (Y) between the pixel electrode 51 and μ results in: a change in the voltage AV, and finally shows fluctuations in the transmittance of the liquid crystal. Next, a case is described by the embodiment, in which an active-array-driven liquid crystal display The structure of the data driver of the LCD device is based on the horizontal scanning circuit < output control, and the analog signal is used to keep the video signal in the source sink in order. The paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm). — Order --------- line (please read first (Please read the notes on the back and fill in this page again) -35- 491987 A7 Printed on the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (33) Among the capacitors of the stream line, the drive system is performed by a method, where The f-frequency signal is divided into multi-phase signals after the transmission frequency is reduced, and then provided in parallel, that is, the multi-point instant sampling driving method of point-sequence driving. The sum of FIG. 13 is 1 (where n is the number of instant sampling). An example of a display drive system has two sample-and-hold circuits 72, 73 for each of the colors & (red), G (green), and b (blue), only representatively shown for R color data driver 74. Two color analog video signals from R, G & B output from D / A converter 71, the R analog video signal is input to the sampling_and_holding circuit 72:73 After the heart, as shown in Figure 15A · 15 (:, this analog signal is sampled by 6 points using two sampling-and-hold circuits 72, 73, for a total of 12 points, and held for a period of 12 points. After that, the The signals are derived from the sampling and holding circuits 72, 73 in 1 2 parallel The data is outputted in the form of data and provided to the R color data driver 7. The 12 parallel data in the R color data driver 74 are simultaneously transferred by the twelve analog switches 76 to the twelve source bus bars 77. This open relationship Turning on and off in synchronization with the scanning signal pulse derived from the horizontal scanning circuit 75 is performed by the shift register, as shown in Figure 16. After that, the foregoing operation is repeated. The operation of the data driver is performed in this way. As described above As mentioned above, in the multi-point simultaneous sampling driving method, the sampling operation is performed on a section, that is, a plurality of lines are taken as a section. As in the aforementioned multi-point simultaneous sampling driving method, multiple lines (ie, multiple pixels) are used as a section. When sampling is performed based on the section, if horizontal line conversion driving is used, the problem of capacitive coupling occurs, that is, adjacent to each other. Between the pixels, there is a coupling capacitor C 〃, 寸, and mesh size along the gate bus line. -36- This paper size applies to China National Standard (Cns) A4 (210 X 297 mm) -11 H ϋ (Please read the notes on the back before filling this page) -I- n βί Thread A7
=時抽樣像素區段及後續同時抽樣區段中鄰接像素之保持 黾位波動,而該波動係形成垂直條紋形式。 原因係爲該水平線轉換驅動中,僅有像素電極位於同時 抽樣像素區段之末端的像素電位受到該像素及後續抽樣之 像素區段之源極匯流排線電位的影響,其因與其鄰接像素 電極電容性耦合或與所結合之源極匯流排線電容性耦合而 大幅改變成相反符號。 然而,前述具體實例中係進行圖框轉換驅動。因此,即 使使用具有相同結構之數據驅動器及驅動方法,該源極匯 流排線及同時抽樣之區段與後續抽樣像素區段接觸之像素 電極的電位變化受到抑制,以防止產生條紋。因此,可大 幅改善顯示品質。 因而描述本發明,顯然而可許多方式下相同地變化。該 ’交化不視爲偏離本發明之精神及範圍,熟習此技藝者已知 所有此等修飾皆包括於以下申請專利範圍内。 參考編號列示 11 :絕緣基板 12 : a-Si薄膜(多晶Si薄膜) 1 3 :閘極氧化物 14 :問極 15, 31,43,53:儲存電容器 1 ό :平面化薄膜 1 7,3 3,4 5,5 5 :接觸孔 18 ’ 35 ’ 47,57 ··金屬圖型(寫入) -37- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------------Φ f請先閱讀背面之注意事項再填寫本頁) 訂---------線IAW---- 經濟部智慧財產局員工消費合作社印制衣 491987 A7 _B7_ 五、發明說明(35) 21,34,46,56:通孔 2 2 :遮光薄膜 2 3 :中間層絕緣體 24, 36, 48,58:像素接觸孔 25,37, 49,51,52:像素電極 26 :數據驅動器 2 7 :閘極驅動器 28 :液晶顯示器LCD區域 29 :驅動器-積合面板 3 2,4 4,5 4 :閘極匯流排線 4 1 :遮光圖型層 4 2,5 9 :源極匯流排線 6 0 :薄膜電晶體 62 :遮光層 --------訂---------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -38 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)In the sampled pixel segment and the subsequent simultaneous sampled segments, the holding position fluctuations of adjacent pixels are formed, and the fluctuations form a vertical stripe form. The reason is that in this horizontal line conversion drive, only the pixel potential of the pixel electrode at the end of the sampled pixel segment is affected by the potential of the source bus line of the pixel and subsequent sampled pixel segments. Capacitive coupling or capacitive coupling with the combined source busbars changes significantly to the opposite sign. However, in the foregoing specific example, frame conversion driving is performed. Therefore, even if a data driver and a driving method having the same structure are used, the potential variation of the source bus line and the pixel electrode in contact with the simultaneously sampled section and the subsequent sampled pixel section is suppressed to prevent streaks. Therefore, the display quality can be greatly improved. Thus, the present invention is described, and obviously, it can be changed in many ways. The 'crossing' is not considered to deviate from the spirit and scope of the present invention, and all such modifications known to those skilled in the art are included in the scope of the following patent applications. Reference number list 11: insulating substrate 12: a-Si film (polycrystalline Si film) 1 3: gate oxide 14: question electrode 15, 31, 43, 53: storage capacitor 1 ό: planarization film 1 7, 3 3, 4 5, 5 5: Contact hole 18 '35' 47, 57 ·· Metal pattern (write) -37- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)- ------------ Φ f, please read the precautions on the back before filling this page) Order --------- line IAW ---- Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperative Printed clothing 491987 A7 _B7_ V. Description of the invention (35) 21, 34, 46, 56: through hole 2 2: light shielding film 2 3: intermediate layer insulator 24, 36, 48, 58: pixel contact hole 25, 37, 49 51, 52: Pixel electrode 26: Data driver 2 7: Gate driver 28: Liquid crystal display LCD area 29: Driver-integrated panel 3 2, 4 4, 5 4: Gate bus bar 4 1: Light-shielding pattern Layer 4 2, 5 9: Source busbar 6 0: Thin-film transistor 62: Light-shielding layer -------- Order --------- ^ (Please read the precautions on the back first (Fill in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -38-Paper Scale applicable Chinese National Standard (CNS) A4 size (210 X 297 mm)
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JP34860399 | 1999-12-08 | ||
JP2000311998A JP2001228457A (en) | 1999-12-08 | 2000-10-12 | Liquid crystal display device |
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US (1) | US6618033B2 (en) |
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- 2000-12-08 US US09/731,815 patent/US6618033B2/en not_active Expired - Lifetime
- 2000-12-08 TW TW089126217A patent/TW491987B/en not_active IP Right Cessation
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Also Published As
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US20010003446A1 (en) | 2001-06-14 |
JP2001228457A (en) | 2001-08-24 |
KR20010062208A (en) | 2001-07-07 |
KR100375749B1 (en) | 2003-03-15 |
US6618033B2 (en) | 2003-09-09 |
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