TW486712B - Decaborane ion source - Google Patents
Decaborane ion source Download PDFInfo
- Publication number
- TW486712B TW486712B TW089120519A TW89120519A TW486712B TW 486712 B TW486712 B TW 486712B TW 089120519 A TW089120519 A TW 089120519A TW 89120519 A TW89120519 A TW 89120519A TW 486712 B TW486712 B TW 486712B
- Authority
- TW
- Taiwan
- Prior art keywords
- ionization
- vaporized
- scope
- ion
- patent application
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 230000007246 mechanism Effects 0.000 claims abstract description 13
- 230000008016 vaporization Effects 0.000 claims abstract description 12
- 238000011049 filling Methods 0.000 claims description 15
- 238000009834 vaporization Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 238000000354 decomposition reaction Methods 0.000 claims description 7
- 239000011364 vaporized material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
- DFXIVBPJAOWKEQ-UHFFFAOYSA-N C(CCCCCCCCC)B Chemical compound C(CCCCCCCCC)B DFXIVBPJAOWKEQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010891 electric arc Methods 0.000 claims description 2
- 241000124033 Salix Species 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 43
- 229910052796 boron Inorganic materials 0.000 abstract description 15
- 239000007787 solid Substances 0.000 abstract description 9
- 239000006200 vaporizer Substances 0.000 abstract description 6
- -1 boron ions Chemical class 0.000 abstract description 3
- 238000010494 dissociation reaction Methods 0.000 abstract 2
- 230000005593 dissociations Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229910015900 BF3 Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OPFOKGROZDGRMD-UHFFFAOYSA-N B.CCCCCCCCCC Chemical group B.CCCCCCCCCC OPFOKGROZDGRMD-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical group [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- IBAAMOWVQBTUNO-UHFFFAOYSA-N decylboron Chemical compound [B]CCCCCCCCCC IBAAMOWVQBTUNO-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/416,159 US6288403B1 (en) | 1999-10-11 | 1999-10-11 | Decaborane ionizer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW486712B true TW486712B (en) | 2002-05-11 |
Family
ID=23648806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089120519A TW486712B (en) | 1999-10-11 | 2000-10-03 | Decaborane ion source |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6288403B1 (https=) |
| EP (1) | EP1093149B1 (https=) |
| JP (1) | JP5062458B2 (https=) |
| KR (1) | KR100571015B1 (https=) |
| SG (1) | SG86444A1 (https=) |
| TW (1) | TW486712B (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862006B (zh) * | 2015-02-09 | 2018-06-19 | 汉辰科技股份有限公司 | 具有蒸发器的离子源 |
| CN105719927B (zh) * | 2014-12-23 | 2018-11-27 | 汉辰科技股份有限公司 | 离子源 |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7838850B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | External cathode ion source |
| EP1245036B1 (en) * | 1999-12-13 | 2013-06-19 | Semequip, Inc. | Ion implantation ion source |
| US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
| US6452338B1 (en) * | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
| EP1538655A3 (en) * | 1999-12-13 | 2009-06-03 | Semequip, Inc. | Ion implantation ion source |
| US6670623B2 (en) * | 2001-03-07 | 2003-12-30 | Advanced Technology Materials, Inc. | Thermal regulation of an ion implantation system |
| US20030030010A1 (en) * | 2001-08-07 | 2003-02-13 | Perel Alexander S. | Decaborane vaporizer having improved vapor flow |
| US20030111014A1 (en) * | 2001-12-18 | 2003-06-19 | Donatucci Matthew B. | Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds |
| US7518124B2 (en) * | 2002-03-28 | 2009-04-14 | Applied Materials, Inc. | Monatomic dopant ion source and method |
| GB2387022B (en) * | 2002-03-28 | 2005-12-21 | Applied Materials Inc | Monatomic boron ion source and method |
| US7138768B2 (en) * | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
| JP4048837B2 (ja) * | 2002-05-24 | 2008-02-20 | 日新イオン機器株式会社 | イオン源の運転方法およびイオン源装置 |
| EP1808885A1 (en) * | 2002-06-26 | 2007-07-18 | Semequip, Inc. | A semiconductor device and method of fabricating a semiconductor device |
| US6686595B2 (en) * | 2002-06-26 | 2004-02-03 | Semequip Inc. | Electron impact ion source |
| JP2005531158A (ja) * | 2002-06-26 | 2005-10-13 | セムエキップ インコーポレイテッド | 半導体デバイス及び半導体デバイスの製造方法 |
| KR100864048B1 (ko) | 2002-06-26 | 2008-10-17 | 세미이큅, 인코포레이티드 | 이온 소스 |
| US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US6868869B2 (en) * | 2003-02-19 | 2005-03-22 | Advanced Technology Materials, Inc. | Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases |
| US20080200020A1 (en) * | 2003-06-18 | 2008-08-21 | Semequip, Inc. | Semiconductor device and method of fabricating a semiconductor device |
| US6909839B2 (en) * | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
| JP4325852B2 (ja) * | 2003-09-19 | 2009-09-02 | Ｏｋｉセミコンダクタ株式会社 | イオンソース用ベーパライザ |
| US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
| US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
| US7820981B2 (en) | 2003-12-12 | 2010-10-26 | Semequip, Inc. | Method and apparatus for extending equipment uptime in ion implantation |
| US7342236B2 (en) * | 2004-02-23 | 2008-03-11 | Veeco Instruments, Inc. | Fluid-cooled ion source |
| US7741621B2 (en) * | 2004-07-14 | 2010-06-22 | City University Of Hong Kong | Apparatus and method for focused electric field enhanced plasma-based ion implantation |
| KR100620227B1 (ko) * | 2004-12-14 | 2006-09-08 | 동부일렉트로닉스 주식회사 | 이온 주입 장치의 증발기 조절 방법 |
| CN101495190B (zh) * | 2005-03-16 | 2013-05-01 | 高级技术材料公司 | 用于从固体源递送试剂的系统 |
| US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
| US20070178678A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
| US7473606B2 (en) * | 2006-02-22 | 2009-01-06 | United Microelectronics Corp. | Method for fabricating metal-oxide semiconductor transistors |
| WO2007146888A2 (en) * | 2006-06-12 | 2007-12-21 | Semequip, Inc. | Vapor delivery to devices under vacuum |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| US8013312B2 (en) * | 2006-11-22 | 2011-09-06 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
| US20080305598A1 (en) * | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
| WO2009039382A1 (en) * | 2007-09-21 | 2009-03-26 | Semequip. Inc. | Method for extending equipment uptime in ion implantation |
| CN102047376A (zh) * | 2008-05-30 | 2011-05-04 | 艾克塞利斯科技公司 | 注入硼烷时在半导体基片上的粒子控制 |
| US7812321B2 (en) * | 2008-06-11 | 2010-10-12 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a multimode ion source |
| US7759657B2 (en) | 2008-06-19 | 2010-07-20 | Axcelis Technologies, Inc. | Methods for implanting B22Hx and its ionized lower mass byproducts |
| US20100019141A1 (en) * | 2008-07-25 | 2010-01-28 | Varian Semiconductor Equipment Associates, Inc. | Energy contamination monitor with neutral current detection |
| JP5220549B2 (ja) * | 2008-10-20 | 2013-06-26 | 本田技研工業株式会社 | アウタロータ型多極発電機のステータ構造体 |
| MY160165A (en) * | 2009-04-10 | 2017-02-28 | Applied Materials Inc | Use special ion source apparatus and implant with molecular ions to process hdd (high density magnetic disks)with patterned magnetic domains |
| US8350236B2 (en) * | 2010-01-12 | 2013-01-08 | Axcelis Technologies, Inc. | Aromatic molecular carbon implantation processes |
| US8344337B2 (en) | 2010-04-21 | 2013-01-01 | Axcelis Technologies, Inc. | Silaborane implantation processes |
| KR20200124780A (ko) | 2012-05-31 | 2020-11-03 | 엔테그리스, 아이엔씨. | 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송 |
| US9134074B2 (en) | 2012-10-04 | 2015-09-15 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for thermal control of ion sources and sputtering targets |
| KR101967145B1 (ko) * | 2017-04-06 | 2019-04-09 | 울박, 인크 | 이온원 및 이온 주입 장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1900569C3 (de) * | 1969-01-07 | 1976-01-08 | Varian Mat Gmbh, 2800 Bremen | Festkörper-Ionenquelle |
| US3700892A (en) * | 1971-08-25 | 1972-10-24 | Atomic Energy Commission | Separation of mercury isotopes |
| JPH09245997A (ja) * | 1996-03-05 | 1997-09-19 | Nissin Electric Co Ltd | カバーで覆われた内壁とアンテナを持つプラズマ室 |
| US5914494A (en) * | 1996-03-27 | 1999-06-22 | Thermoceramix, Llc | Arc chamber for an ion implantation system |
| US5661308A (en) | 1996-05-30 | 1997-08-26 | Eaton Corporation | Method and apparatus for ion formation in an ion implanter |
| JP3749924B2 (ja) | 1996-12-03 | 2006-03-01 | 富士通株式会社 | イオン注入方法および半導体装置の製造方法 |
| US6072182A (en) | 1998-10-01 | 2000-06-06 | California Institute Of Technology | High-efficiency electron ionizer for a mass spectrometer array |
| US6107634A (en) * | 1998-04-30 | 2000-08-22 | Eaton Corporation | Decaborane vaporizer |
| JP4303337B2 (ja) * | 1998-12-02 | 2009-07-29 | 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー | 分子イオンエンハンストイオン源装置 |
-
1999
- 1999-10-11 US US09/416,159 patent/US6288403B1/en not_active Expired - Lifetime
-
2000
- 2000-10-03 TW TW089120519A patent/TW486712B/zh active
- 2000-10-05 JP JP2000306128A patent/JP5062458B2/ja not_active Expired - Fee Related
- 2000-10-06 SG SG200005703A patent/SG86444A1/en unknown
- 2000-10-06 EP EP00308816A patent/EP1093149B1/en not_active Expired - Lifetime
- 2000-10-06 KR KR1020000058800A patent/KR100571015B1/ko not_active Expired - Fee Related
-
2001
- 2001-08-22 US US09/934,785 patent/US6958481B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105719927B (zh) * | 2014-12-23 | 2018-11-27 | 汉辰科技股份有限公司 | 离子源 |
| CN105862006B (zh) * | 2015-02-09 | 2018-06-19 | 汉辰科技股份有限公司 | 具有蒸发器的离子源 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5062458B2 (ja) | 2012-10-31 |
| SG86444A1 (en) | 2002-02-19 |
| KR100571015B1 (ko) | 2006-04-13 |
| KR20010050893A (ko) | 2001-06-25 |
| US20010054699A1 (en) | 2001-12-27 |
| US6958481B2 (en) | 2005-10-25 |
| EP1093149A2 (en) | 2001-04-18 |
| US6288403B1 (en) | 2001-09-11 |
| JP2001135253A (ja) | 2001-05-18 |
| EP1093149A3 (en) | 2003-01-02 |
| EP1093149B1 (en) | 2011-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW486712B (en) | Decaborane ion source | |
| US8344337B2 (en) | Silaborane implantation processes | |
| US7759657B2 (en) | Methods for implanting B22Hx and its ionized lower mass byproducts | |
| US6744214B2 (en) | Electron beam ion source with integral low-temperature vaporizer | |
| US6107634A (en) | Decaborane vaporizer | |
| TW504759B (en) | Ion source having replaceable and sputterable solid source material | |
| TW527619B (en) | Method and system for icosaborane implantation | |
| CN102105966B (zh) | 离子植入设备、多模式离子源及多模式中的离子植入方法 | |
| US8330118B2 (en) | Multi mode ion source | |
| US8350236B2 (en) | Aromatic molecular carbon implantation processes | |
| TW503432B (en) | Magnet for generating a magnetic field in an ion source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |