KR100571015B1 - 데카보란 이온화기 - Google Patents

데카보란 이온화기 Download PDF

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Publication number
KR100571015B1
KR100571015B1 KR1020000058800A KR20000058800A KR100571015B1 KR 100571015 B1 KR100571015 B1 KR 100571015B1 KR 1020000058800 A KR1020000058800 A KR 1020000058800A KR 20000058800 A KR20000058800 A KR 20000058800A KR 100571015 B1 KR100571015 B1 KR 100571015B1
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KR
South Korea
Prior art keywords
vaporized
decaborane
ionizer
plasma
ionization chamber
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020000058800A
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English (en)
Korean (ko)
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KR20010050893A (ko
Inventor
홀스키토마스네일
페렐알렉산더스튜어트
로이지데스윌리암케이즈
Original Assignee
액셀리스 테크놀로지스, 인크.
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Application filed by 액셀리스 테크놀로지스, 인크. filed Critical 액셀리스 테크놀로지스, 인크.
Publication of KR20010050893A publication Critical patent/KR20010050893A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020000058800A 1999-10-11 2000-10-06 데카보란 이온화기 Expired - Fee Related KR100571015B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/416,159 US6288403B1 (en) 1999-10-11 1999-10-11 Decaborane ionizer
US9/416,159 1999-10-11
US09/416,159 1999-10-11

Publications (2)

Publication Number Publication Date
KR20010050893A KR20010050893A (ko) 2001-06-25
KR100571015B1 true KR100571015B1 (ko) 2006-04-13

Family

ID=23648806

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000058800A Expired - Fee Related KR100571015B1 (ko) 1999-10-11 2000-10-06 데카보란 이온화기

Country Status (6)

Country Link
US (2) US6288403B1 (https=)
EP (1) EP1093149B1 (https=)
JP (1) JP5062458B2 (https=)
KR (1) KR100571015B1 (https=)
SG (1) SG86444A1 (https=)
TW (1) TW486712B (https=)

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US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
EP1538655A3 (en) * 1999-12-13 2009-06-03 Semequip, Inc. Ion implantation ion source
US6670623B2 (en) * 2001-03-07 2003-12-30 Advanced Technology Materials, Inc. Thermal regulation of an ion implantation system
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US20030111014A1 (en) * 2001-12-18 2003-06-19 Donatucci Matthew B. Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds
US7518124B2 (en) * 2002-03-28 2009-04-14 Applied Materials, Inc. Monatomic dopant ion source and method
GB2387022B (en) * 2002-03-28 2005-12-21 Applied Materials Inc Monatomic boron ion source and method
US7138768B2 (en) * 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
JP4048837B2 (ja) * 2002-05-24 2008-02-20 日新イオン機器株式会社 イオン源の運転方法およびイオン源装置
EP1808885A1 (en) * 2002-06-26 2007-07-18 Semequip, Inc. A semiconductor device and method of fabricating a semiconductor device
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
JP2005531158A (ja) * 2002-06-26 2005-10-13 セムエキップ インコーポレイテッド 半導体デバイス及び半導体デバイスの製造方法
KR100864048B1 (ko) 2002-06-26 2008-10-17 세미이큅, 인코포레이티드 이온 소스
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US6868869B2 (en) * 2003-02-19 2005-03-22 Advanced Technology Materials, Inc. Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases
US20080200020A1 (en) * 2003-06-18 2008-08-21 Semequip, Inc. Semiconductor device and method of fabricating a semiconductor device
US6909839B2 (en) * 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
JP4325852B2 (ja) * 2003-09-19 2009-09-02 Ｏｋｉセミコンダクタ株式会社 イオンソース用ベーパライザ
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
US7820981B2 (en) 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US7342236B2 (en) * 2004-02-23 2008-03-11 Veeco Instruments, Inc. Fluid-cooled ion source
US7741621B2 (en) * 2004-07-14 2010-06-22 City University Of Hong Kong Apparatus and method for focused electric field enhanced plasma-based ion implantation
KR100620227B1 (ko) * 2004-12-14 2006-09-08 동부일렉트로닉스 주식회사 이온 주입 장치의 증발기 조절 방법
CN101495190B (zh) * 2005-03-16 2013-05-01 高级技术材料公司 用于从固体源递送试剂的系统
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
US20070178678A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7473606B2 (en) * 2006-02-22 2009-01-06 United Microelectronics Corp. Method for fabricating metal-oxide semiconductor transistors
WO2007146888A2 (en) * 2006-06-12 2007-12-21 Semequip, Inc. Vapor delivery to devices under vacuum
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US8013312B2 (en) * 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
WO2009039382A1 (en) * 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
CN102047376A (zh) * 2008-05-30 2011-05-04 艾克塞利斯科技公司 注入硼烷时在半导体基片上的粒子控制
US7812321B2 (en) * 2008-06-11 2010-10-12 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a multimode ion source
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
US20100019141A1 (en) * 2008-07-25 2010-01-28 Varian Semiconductor Equipment Associates, Inc. Energy contamination monitor with neutral current detection
JP5220549B2 (ja) * 2008-10-20 2013-06-26 本田技研工業株式会社 アウタロータ型多極発電機のステータ構造体
MY160165A (en) * 2009-04-10 2017-02-28 Applied Materials Inc Use special ion source apparatus and implant with molecular ions to process hdd (high density magnetic disks)with patterned magnetic domains
US8350236B2 (en) * 2010-01-12 2013-01-08 Axcelis Technologies, Inc. Aromatic molecular carbon implantation processes
US8344337B2 (en) 2010-04-21 2013-01-01 Axcelis Technologies, Inc. Silaborane implantation processes
KR20200124780A (ko) 2012-05-31 2020-11-03 엔테그리스, 아이엔씨. 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송
US9134074B2 (en) 2012-10-04 2015-09-15 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for thermal control of ion sources and sputtering targets
TWI559355B (zh) * 2014-12-23 2016-11-21 漢辰科技股份有限公司 離子源
TWI590285B (zh) * 2015-02-09 2017-07-01 漢辰科技股份有限公司 具有蒸發器的離子源
KR101967145B1 (ko) * 2017-04-06 2019-04-09 울박, 인크 이온원 및 이온 주입 장치

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US3700892A (en) * 1971-08-25 1972-10-24 Atomic Energy Commission Separation of mercury isotopes
JPH09245997A (ja) * 1996-03-05 1997-09-19 Nissin Electric Co Ltd カバーで覆われた内壁とアンテナを持つプラズマ室
US5914494A (en) * 1996-03-27 1999-06-22 Thermoceramix, Llc Arc chamber for an ion implantation system
US5661308A (en) 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
JP3749924B2 (ja) 1996-12-03 2006-03-01 富士通株式会社 イオン注入方法および半導体装置の製造方法
US6072182A (en) 1998-10-01 2000-06-06 California Institute Of Technology High-efficiency electron ionizer for a mass spectrometer array
US6107634A (en) * 1998-04-30 2000-08-22 Eaton Corporation Decaborane vaporizer
JP4303337B2 (ja) * 1998-12-02 2009-07-29 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー 分子イオンエンハンストイオン源装置

Also Published As

Publication number Publication date
JP5062458B2 (ja) 2012-10-31
SG86444A1 (en) 2002-02-19
KR20010050893A (ko) 2001-06-25
US20010054699A1 (en) 2001-12-27
US6958481B2 (en) 2005-10-25
EP1093149A2 (en) 2001-04-18
US6288403B1 (en) 2001-09-11
JP2001135253A (ja) 2001-05-18
TW486712B (en) 2002-05-11
EP1093149A3 (en) 2003-01-02
EP1093149B1 (en) 2011-12-07

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