五 技 發明說明 術領域 本發明係關於一種可用於 置，特別是用來控制，田條線:=路的可切換微波裝 發明背景 、、條線或颂似傳輪線内之微波傳導。 在建構微波積體電路時， 波加以控制。 义須在不同方面對所傳導的微 二士國專利案5,770,546揭露超導電帶通濾波哭， 錯由&加機械力或壓力戋 σσ 利宰5 58 5 %可更改其特性。美國專 ，、，5, 330揭路一種藉由控制超導電特性以改變超 电細條線阻抗之方法。 、在公開的國際專利申請案？〇 〇〇/〇46〇3中揭露一種用於 初級微波頻率的電感器，其包含一條設計成由一中央線所 組成之線性微條元件的傳輸線，該中央線包含正常的電氣 傳導材質’如適用的金屬。微條元件具有一可在中央線超 導電體的侧邊製造區域而加以改變的寬度。改變微條的有 效寬度可連帶改變其電感值。微條元件側邊之區域乃直接 位於中央、正常的金屬導體。在公開的國際專利申請案w〇 〇 〇 / 0 4 6 0 2中揭露一種用於，如微波頻率，的低通或帶斥濾 波器，其構造與述及的國際專利申請案w〇 0 0 / 0 46 0 3所揭 露的電感器之濾波器（that)類似。 發明概述 本發明之〆目的乃提供一微波裝置，如一種可依控制信 號切換不同特性阻抗值的傳輪線.。 本發明所要解決的問題為如何建構一微波裝置，尤其是V. TECHNICAL DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a switchable microwave device that can be used for setting, especially for controlling, field lines: = roads. BACKGROUND OF THE INVENTION Microwave transmission in a wire, wire, or loop line. When constructing a microwave integrated circuit, waves are controlled. It is required that the conductive micro-pass patent case 5,770,546 in different aspects disclose the superconducting bandpass filter, which can be changed by applying mechanical force or pressure 戋 σσ 5 5% to change its characteristics. The U.S.A., 5, 330 unveiled a method to change the impedance of ultra-thin thin wires by controlling the superconducting characteristics. What are the international patent applications being published? 〇〇〇 / 〇46〇3 discloses an inductor for primary microwave frequency, which includes a transmission line designed as a linear microstrip element composed of a central line, the central line contains normal electrical conductive material 'such as Applicable metal. The microstrip element has a width that can be changed by fabricating regions on the sides of the centerline superconductor. Changing the effective width of a microstrip can change its inductance value. The area on the side of the microstrip element is a central, normal metal conductor directly. A low-pass or band-rejection filter for use in, for example, microwave frequencies is disclosed in the published international patent application WO 00/0 6 0 2. The filter of the inductor disclosed in / 0 46 0 3 is similar. SUMMARY OF THE INVENTION It is an object of the present invention to provide a microwave device, such as a transmission line that can switch different characteristic impedance values according to a control signal. The problem to be solved by the present invention is how to construct a microwave device, especially
48424b 五、發明說明（2) 一種基本上與 置的平面微波 阻抗，阻抗值 得一切換功能 所以，如傳 數值可供控制 器的特性/有 之形狀、採用 區域内製作中 傳輸線因而 乃位於中央細 電材質所組成 微條線由窗口 由橋接區域予 之間的中斷區 態及一電氣非 電氣傳導材質 點或超導電弱 一正常的導電 圖示簡述 本發明將藉 敘述，其中： 圖1為一在不同特 的圖示， 用於處 I置， 的差異 〇 輪線之 的微條 不同的 機械或 斷區。 為平面 條的每 。在一 予以隔 以圍繞 域且所 導通或 為一超 式連結 體而中 由非侷 理原始電氣信I & & 電路有相同建=具有可改變不同随抗值的特性 大到可以產生—微波調變或甚至可取 微波裝置一般包今1¾ γ Μ 力又匕3阻抗值至少有兩個、、果。因此，該梦蓄1 士_ 士上 "表置具有電晶體/放大 万式可控制阻枋佶，M丄苴— 柷值错由改變細條線匕方式，特別是可在細條線的外圍 型式且具有一中央 一邊且所 較佳的幾 離，該窗 。每一側 有的中斷 高阻抗狀 導體而中 。在一第 斷區域則 有不同的 何結構内 口乃沿著 邊細條具 區域可切 態之間。 斷區域則 二例子裏 包含一光 微條線。 細條乃由 ’侧邊細 中央微條 有一位於 換於一電 在—第一 包含約瑟 ’電氣傳 導電材質 側邊細條 一電氣導 條自中央 線的方向 橋接區域 氣導通狀 例子裏， 夫森接合 導材質為 限性的具體^❹參考其㈣予以 性阻杬值下傳輪線之電壓—電流特性48424b V. Description of the invention (2) An essentially planar microwave impedance, the impedance is worth a switching function. Therefore, for example, the transmission value can be used for the controller's characteristics / some shapes, and the transmission line is manufactured in the area, so it is located in the center. The microstrip line composed of electrical materials is composed of a window, a bridge region, and a discontinuity zone between an electrically non-electrically conductive material point or a superconducting weak-normal conductive icon. The present invention will be described briefly, of which: Figure 1 is One is in different special illustrations, which is used to set the difference between the two. The microstrip of the wheel line is different in mechanical or fault area. For each of the flat bars. In a partition that is surrounded by a field and is turned on or is a super-connected body, the non-local original electrical letter I & & circuit has the same construction = has characteristics that can change different random reactance values so large that it can be produced— Microwave modulation or even a desirable microwave device generally includes 1 ¾ γ force and 3 impedance values of at least two. Therefore, the dream saves 1 person _ 士 上 " The table is equipped with a transistor / amplifier type to control the resistance, M 柷 — the value of 错 is wrong by changing the thin line dagger method, especially the outer type of the thin line The window has a central side and a better distance. There are discontinuities on each side of the high impedance conductor. In a first fault area, there are different structural interiors along the edges of the thin strips with areas that can be cut. The broken region contains two light microstrip lines in the two examples. The thin strip is composed of a thin central micro-strip on the side, which is located in place of an electrical conductor-the first contains Joseph 'electrical conductive electrical material. The material of the bonding conductor is limited. Refer to the voltage-current characteristics of the transmission line under the given resistance value.
第7頁 484248 五、發明說明（3) 圖3為 侧面圖 - 圖4為 平面 圖2為•可w於兩個數值之間切換特性阻抗值之平面 切換微波傳輸線的相關圖示， 之千面、可 可切換微波傳輸線之另一具體實 以及 ........... ，、叹貝施例的 可於一個數值之間切換特性阻抗值 切換微波傳輸線的相關圖示。 十面 詳細發明說明 一微條線或其它。玫#曰士 其公 玉式之細條線具有一特性阻括7 式為 几乂’ R + io>lL G + ϋ Z〇R + ^or 輸線的電践 其中R、G、L及C分別為該細條線的電阻值、電 值與電容值。T知在低頻時，阻抗值z。主要由電：鐵 定而在如微波頻率之高頻時阻抗值則主要由傳 所决 性與電容性所決定，亦即Page 7 484248 V. Description of the invention (3) Fig. 3 is a side view-Fig. 4 is a plan view and 2 is a related diagram of a plane switching microwave transmission line that can switch the characteristic impedance value between two values. Another specific implementation of the cocoa switchable microwave transmission line and .........., related illustration of the characteristic impedance value switching microwave transmission line can be switched between a numerical value in the example. Ten Sides Detailed Invention Description A microstrip or other.玫瑰 # The fine line of Shi Jie's male jade style has a characteristic that includes the formula 7 which is a few 乂 'R + io> lL G + ϋ Z〇R + ^ or The electrical practice of the transmission line where R, G, L, and C are respectively Are the resistance value, electrical value and capacitance value of the thin line. T knows the impedance value z at low frequencies. It is mainly determined by electricity: at high frequencies such as microwave frequencies, the impedance value is mainly determined by transmission and capacitance, that is,
C •Z〇 絕對值。例如，在所述及的國際專利申請案中，等級為i: 2之電感值變化會附隨些微的電容值變化而導致阻抗值的 等級約為1 ··々《 .1. 4而使該裝置不.適用於許多的應用。然 因此，特性阻抗Z。可藉由控制細條線的電感值與/或 容值予以改變而產生如圖丨所示電壓—電流特性曲線之變 化。該裝置經由適當地設計可得到特定變化之特性阻抗之 而，在包含後述窗口的特別微條架構中，藉由適當的設計C • Z〇 Absolute value. For example, in the international patent application mentioned, a change in the inductance value of level i: 2 will be accompanied by a slight change in capacitance value, resulting in a level of impedance value of about 1 ·· 々 《.1.4 The device is not suitable for many applications. However, the characteristic impedance Z. You can change the voltage-current characteristic curve as shown in Figure 丨 by controlling the inductance and / or capacitance of the thin line. The device can be designed to obtain a characteristic impedance with a specific change. In a special microstrip structure including a window described below,
、發明說明（4) σ =到相對較大的特性阻抗變化。 在圖2的平面微铬娃_ &丄 氣導通接地声3，如f疋 使用一介電基底1，其有電 面上，該接^厚D ”5、銀或鋁的金屬層，在其底部之表 層。在I邻夺二卜^上覆蓋所有的底部表面而成™連續 子中該圖案ϋί:圖案式電氣傳導層5。在十例 由正常的電氣傳^ t層為一超導體而在一第二例子中則 屬，亦即鋼、銀或^ ^組成’、例如與底部層相同的金 徑將微波導向箭頭/ Μ圖案式層5形成一傳輸或傳導路 勻寬度％之中央主龄的方向。該圖案式層5有一具有均 有側邊細‘兩^ 央主幹，兩條側邊均句的寬度並平行地延伸至中 邊細條1 1最好a以士條刀別位於中央主幹9的兩側。側 細條11於圖安=思I央主幹9為準軸予以對稱排置。側邊 具有細條自中央主幹予以隔離，因而亦 -側邊細條之外侧；：自一側邊細條之外侧邊際至另 電磁波時哕跖銼介&不的距離為W。，在側邊細條用於導引 窗口 1==導、波管的有效寬度。 至側邊細條丨丨的二三亚在其終端由自中央主幹路徑9延伸 央部份關於橋接： = 方式或經由牿破、$埋置有场域或缺口區域1 7，以特殊的 例子裏形成^tΐ才質所作成。該特殊區域17在第一 子裏包含合點或超導電弱式連結且在第二例 在弟一^列子真 p + 特殊區域1 7導通一電流形成一超導Explanation of the invention (4) σ = to a relatively large characteristic impedance change. In the plane of FIG. 2, the micro-chromium silicon & & 丄 gas conduction grounding sound 3, such as f 疋 uses a dielectric substrate 1, which has an electrical surface, which is connected to a thick D ″ 5, silver or aluminum metal layer, in The surface layer at the bottom. It is formed by covering all the bottom surfaces on the adjacent surface. The pattern in the continuum is: patterned electrical conduction layer 5. In ten cases, the normal electrical transmission layer is a superconductor. In a second example, it is a steel, silver or ^ ^ composition, for example, the same gold diameter as the bottom layer will guide the microwave / arrow pattern layer 5 to form a central master with a uniform width% of transmission or conduction path. The patterned layer 5 has a thin central trunk with two sides, and the width of both sides is parallel to the middle thin strip 1 1 It is best that a blade knife is located in the center The two sides of the main trunk 9. The side strips 11 are arranged symmetrically in Tu'an = Si I. The main trunk 9 is arranged symmetrically. The side has thin strips to isolate it from the central trunk, and therefore also-the outer side of the thin strips; The distance between the outer margin of the thin strip and the other electromagnetic waves is not larger than W. The thin strips on the side are used for guidance. Window 1 == effective width of the guide and wave tube. The second and third digits of the side strips 丨 丨 extend from the central trunk path 9 to the central part at the terminal. About the bridge: = way or via breakage, $ embedded field Or the gap region 17 is formed by a special example of the formation of ^ tΐ. This special region 17 contains a junction or a superconducting weak connection in the first child and a second one in the first child. Special region 1 7 turns on a current to form a superconductor
484248 五、發明說明（5) 體電流迴路以於該特殊區域i 7 之裝置1 9所示。電产可士 — +生£域化磁場，如圖2 徂庙装9彳 了由一電壓供應器2 1所產生，#恭懕 ;ί2; 2 b :電阻“—切換器23連接至裝置19二刀 換J3由一些未示出的監控或信號控制電该切 區域17内之約瑟夫森接合點或超導電1^遠= =電流及監控或控制電路取得—正常 =結= 措由超導t電流迴路之工呈隹 包狀怨。不 溫度予以控制，裝置i 9因^ A 丁工，，而對该特殊區域的 將導以用的半導體雷射之光源25乃用於 將九&射至由先導电材質所組的特殊區域17，浐 3。該光源25乃連接至未示出的監控或信號控 其所控制。光源25在加能時會電氣性地將相關二;= 的終端相互連接並使細條成為接觸性或連續性二：： =:而未加能時該側邊細在特殊區域17會產中 如圖2和3所示’ 一電磁波或微波可沿著 導。當特殊區域17為電氣中斷時，結構内因構傳 電流會受限在寬度^的中央細條9内。當特殊 氣連接時，大部份導自微波的Ac電流 °。或為电 邊細條η内流動，側邊細條之外側邊際二 =應而= 條線5至其接地平面3的高度為固定，微條線每單^右^ 電感值主要由該線的整個寬0所決定，例如約：長度: 反比，亦即約與成比例。因此，藉由改變缺成 的狀態可使側邊細條為連續性或中斷，微條線的减或484248 V. Description of the invention (5) The body current loop is shown in the device 19 of the special area i 7. Dianke Keshi — + localized magnetic field, as shown in Figure 2 is installed in a temple 9 and is generated by a voltage supply 21, # 恭 懕; ί2; 2 b: resistance "-switch 23 is connected to device 19 The two-tool change for J3 is controlled by some unshown monitoring or signals. The Josephson junction or superconductivity in the cutting area 17 is far from = = current and monitoring or control circuit is obtained-normal = junction = measures by superconducting t The work of the current loop is a baggage complaint. Without temperature control, the device i 9 due to ^ A Ding, and the semiconductor laser light source 25 to be used in this special area is used to To the special area 17, which is made of the first conductive material, the light source 25 is connected to a control or signal control not shown. When the light source 25 is energized, it will electrically connect the related two terminals; Connect each other and make the strips contact or continuity. 2: =: When the energy is not applied, the side edge will be produced in the special area 17 as shown in Figures 2 and 3. An electromagnetic wave or microwave can be guided along. When the special area 17 is electrically interrupted, the structure-borne current in the structure will be limited to the central thin strip 9 with a width of ^. When the special gas connection At the time of connection, most of the Ac currents conducted from the microwave are °. Or they flow inside the thin strips η on the electrical side, and the outside margin 2 on the side strips ===== The height of line 5 to its ground plane 3 is fixed, and the microstrip line Each single ^ right ^ inductance value is mainly determined by the entire width of the line 0, such as about: length: inverse ratio, that is, approximately proportional to. Therefore, the side strips can be made continuous or Break, minus or
第10頁 484248 案號 89119466 修正 1穸工補充 五、發明說明（6) 也跟著改變。另外，若傳輸線5至其接地平面3的高度在一 給定的基底1介電材質下為固定，傳輸線每單位長度的電 容值C是可變化的，電容值約與傳輸線的寬度W成比例。所 以，可藉由改變傳輸線的有效寬度W改變其特性阻抗，例， 如，如上所述在特殊區域17内產生電氣中斷。 既然微波的能源如上所述乃沿著平面架構傳導，可用改 變特性阻抗的方式使該架構用於調制微波，而該架構的主 動寬度則由一監控或信號控電路予以控制。另外，既然改 變特殊區域1 7内約瑟夫森接合點或超導電弱式連結狀態所 需之控制信號的能源遠小於微波沿著該架構傳導時所需的 電源，該架構有一種類似電晶體的放大功能。 圖2所示的架構一般可有許多側邊細條如圖4所示對稱列 置於中央細條的每一側。每一側邊細條1 1則有一特殊或中 斷區域1 7，可控制一對對稱列置之側邊細條之特殊區域1 7 以同時接受一導通狀態或一非導通或高阻抗狀態。 元件符號說明 1 介電基底 3 電氣導通接地層 5 圖案式電氣傳導層 7 箭頭 9 中央主幹路徑 11 側邊細條 13 窗口 15 橋接部份 17 特殊區域 19 裝置 21 電壓供應器 23 切換器 25 光源 W 寬度Page 10 484248 Case No. 89119466 Amendment 1 Machinist's supplement V. Description of invention (6) has also changed. In addition, if the height of the transmission line 5 to its ground plane 3 is fixed under a given substrate 1 dielectric material, the capacitance value C per unit length of the transmission line is variable, and the capacitance value is approximately proportional to the width W of the transmission line. Therefore, the characteristic impedance of the transmission line can be changed by changing the effective width W of the transmission line, for example, an electrical interruption is generated in the special area 17 as described above. Since the energy of the microwave is transmitted along the planar structure as described above, the characteristic impedance can be used to modulate the microwave, and the active width of the structure is controlled by a monitoring or signal control circuit. In addition, since the energy required to control the Josephson junction or the superconducting weak connection in the special area 17 is much less than the power required for microwaves to propagate along the structure, the structure has a transistor-like amplification Features. The architecture shown in Fig. 2 can generally have many side thin strips as shown in Fig. 4 placed on each side of the central thin strip. The thin strips 11 on each side have a special or interrupted area 17 which can control a pair of symmetrically arranged special strips 17 on the side thin strips to accept a conducting state or a non-conducting or high impedance state at the same time. Description of component symbols 1 Dielectric substrate 3 Electrical conduction ground layer 5 Patterned electrical conduction layer 7 Arrow 9 Central trunk path 11 Side strips 13 Window 15 Bridge part 17 Special area 19 Device 21 Voltage supply 23 Switcher 25 Light source W width
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