JPH06283907A - Microstrip line - Google Patents

Microstrip line

Info

Publication number
JPH06283907A
JPH06283907A JP5089354A JP8935493A JPH06283907A JP H06283907 A JPH06283907 A JP H06283907A JP 5089354 A JP5089354 A JP 5089354A JP 8935493 A JP8935493 A JP 8935493A JP H06283907 A JPH06283907 A JP H06283907A
Authority
JP
Japan
Prior art keywords
line
conductor
microstrip line
dielectric
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5089354A
Other languages
Japanese (ja)
Inventor
Hideki Shibuya
秀樹 渋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Chemi Con Corp
Original Assignee
Nippon Chemi Con Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemi Con Corp filed Critical Nippon Chemi Con Corp
Priority to JP5089354A priority Critical patent/JPH06283907A/en
Publication of JPH06283907A publication Critical patent/JPH06283907A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/245Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques

Landscapes

  • Waveguides (AREA)

Abstract

PURPOSE:To reduce the transmission loss and to improve the transmission efficiency of a microstrip line by concentrating the current density distribution of the microstrip line at a high part of high conductivity. CONSTITUTION:An alumina ceramic substrate 1 contains a ground layer on one of both sides, and a strip line 6 is formed on the other side of the substrate 1 by laminating an electroless plating layer 5 on an Ag thick film conductor layer 4. In such a constitution of a microstrip line, the high dielectric constant members 7 are placed on the substrate 1 and at the positions adjacent to both sides of the line 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、マイクロストリップラ
インに関し、特に誘電体基板を挟んだグランド層とスト
リップ線路から構成されるマイクロストリップラインに
おいて、ストリップ線路両側に高誘電体部材を配置する
ことにより伝送損失を減少させる技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microstrip line, and in particular, in a microstrip line composed of a ground layer and a strip line sandwiching a dielectric substrate, high dielectric members are arranged on both sides of the strip line. The present invention relates to a technique for reducing transmission loss.

【0002】[0002]

【従来の技術】例えば、マイクロ波集積回路に用いられ
るマイクロ波伝送線路として、マイクロストリップライ
ンが使用されている。マイクロストリップラインはアル
ミナセラミック等の誘電体基板の一方の面に平板状の導
電体層からなるグランド層を形成し、他方の面にストリ
ップ状の導体線路を形成して伝送線路を構成している。
このマイクロストリップラインの特性は同軸ケーブルを
平面的に展開したものと等価であり、特性インピーダン
スはストリップ線路の幅、厚さ、誘電体基板の誘電率、
厚さによって決定される。
2. Description of the Related Art For example, a microstrip line is used as a microwave transmission line used in a microwave integrated circuit. A microstrip line forms a transmission line by forming a ground layer made of a flat conductor layer on one surface of a dielectric substrate such as alumina ceramic and forming a strip conductor line on the other surface. .
The characteristics of this microstrip line are equivalent to those of a coaxial cable developed in a plane, and the characteristic impedance is the width and thickness of the strip line, the dielectric constant of the dielectric substrate,
Determined by thickness.

【0003】マイクロ波が導体線路中を伝搬する場合、
表皮効果のため電流は導体中心部にはあまり流れず導体
の表面近くに集中する。周波数が高くなるほどその傾向
は強くなりGHzオーダーになると表皮の深さは数ミク
ロンになり、ほとんど導体線路の表面だけを流れるよう
になる。特に導体線路のエッジ部分は電流密度が高くな
る。
When a microwave propagates in a conductor line,
Due to the skin effect, the current does not flow so much in the center of the conductor and is concentrated near the surface of the conductor. The higher the frequency is, the stronger the tendency becomes. When the frequency is in the GHz order, the depth of the skin becomes several microns, and almost the surface of the conductor line flows. In particular, the current density becomes high at the edge portion of the conductor line.

【0004】従来、ストリップ線路は誘電体基板上にA
gペースト等で形成した厚膜導体に無電解Cuメッキ層
を積層した構造のものが用いられている。この構造によ
れば、導電率の低い厚膜導体表面の構造欠陥をCuメッ
キ層で補い、ストリップ線路表皮部分の導電率を高くす
ることができるため、表皮効果により電流が導体表面に
集中した場合にも伝送損失を比較的少なくすることがで
きる。
Conventionally, the strip line is formed on the dielectric substrate by A
A structure in which an electroless Cu plating layer is laminated on a thick film conductor formed of g paste or the like is used. According to this structure, since the structural defects on the surface of the thick film conductor having low conductivity can be compensated by the Cu plating layer and the conductivity of the strip line skin portion can be increased, when the current is concentrated on the conductor surface by the skin effect. Also, the transmission loss can be relatively reduced.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、それで
もなお、Cuメッキ層との界面の欠陥の多いAg厚膜導
体層の部分にある程度電流が流れるため伝送損失が発生
し、マイクロストリップラインの伝送効率を高めるには
限界があった。
However, a certain amount of current still flows in the portion of the Ag thick film conductor layer having many defects at the interface with the Cu plating layer, which causes a transmission loss, thereby increasing the transmission efficiency of the microstrip line. There was a limit to raising it.

【0006】従って、本発明の目的は、マイクロ波の電
流密度分布を構造欠陥が少なく導電率の高いCuメッキ
層にさらに集中させることにより、マイクロストリップ
ラインの伝送損失を大幅に低減させることである。
Therefore, an object of the present invention is to further reduce the transmission loss of the microstrip line by further concentrating the current density distribution of the microwave on the Cu plating layer having few structural defects and high conductivity. .

【0007】[0007]

【課題を解決しようとする手段】上記問題点の解決のた
め、本発明では、一方の面にグランド層として導電体層
を備えた誘電体基板の他方の面にストリップ状の導電体
線路を形成してマイクロストリップラインを構成し、前
記導電体線路の表皮部分が比較的高い導電率を有するマ
イクロストリップラインにおいて、前記導電体線路に隣
接して前記誘電体基板上にこの導電体線路表面に接する
周囲の誘電率よりも高い誘電率の誘電体部材を配置した
ものである。
In order to solve the above problems, in the present invention, a strip-shaped conductor line is formed on the other surface of a dielectric substrate having a conductor layer as a ground layer on one surface. To form a microstrip line, and in which the skin portion of the conductor line has a relatively high conductivity, the microstrip line is adjacent to the conductor line and is in contact with the surface of the conductor line on the dielectric substrate. A dielectric member having a higher dielectric constant than the surrounding dielectric constant is arranged.

【0008】また前記導電体線路は、例えば、Ag厚膜
導体の上に無電解Cuメッキ層を積層形成して構成でき
る。
Further, the conductor line can be formed, for example, by laminating an electroless Cu plating layer on an Ag thick film conductor.

【0009】また前記誘電体部材の誘電率は誘電体基板
の誘電率よりも高くすると好都合である。
Further, it is advantageous that the dielectric constant of the dielectric member is higher than that of the dielectric substrate.

【0010】[0010]

【作用】このような構成により、導電体線路の両側に隣
接して、この導電体線路に接する空気等の周囲の誘電率
よりも高い誘電率の誘電体部材を配置することにより、
導電体線路を流れるマイクロ波の電流密度分布が線路両
側の誘電体隣接部にさらに集中する。従って、構造欠陥
の多いAg厚膜導体のCuメッキ層との界面部分に流れ
る電流の割合が減少し、導電率の高いCuメッキ層表面
に多く流れるようになるため、伝送損失が低減しマイク
ロ波伝送回路の伝送効率が向上する。
With such a configuration, by disposing the dielectric member adjacent to both sides of the conductor line and having a higher dielectric constant than the surrounding dielectric constant of air or the like in contact with the conductor line,
The current density distribution of microwaves flowing through the conductor line is further concentrated on the dielectric adjacent portions on both sides of the line. Therefore, the proportion of the current flowing at the interface between the Ag thick film conductor having many structural defects and the Cu plating layer is reduced, and a large amount of current flows on the surface of the Cu plating layer having high conductivity, so that the transmission loss is reduced and the microwave The transmission efficiency of the transmission circuit is improved.

【0011】また、この導電体線路に隣接させて配置す
る誘電体部材を、誘電体基板の誘電率よりも大きい誘電
体の誘電体部材を使用することにより、電流密度分布を
さらにCuメッキ層に集中することができ、伝送損失を
大幅に低減することができる。
Further, by using a dielectric member having a dielectric constant larger than that of the dielectric substrate as the dielectric member arranged adjacent to the conductor line, the current density distribution is further reduced to the Cu plating layer. It is possible to concentrate, and the transmission loss can be significantly reduced.

【0012】[0012]

【実施例】以下、図面を参照して本発明の実施例につき
説明する。図1は本発明の一実施例に係わるマイクロス
トリップラインの概略の構造を示す斜視図である。同図
の構造においては、アルミナセラミック基板1の一方の
面にはグランド層としてAgペースト等により形成した
厚膜導体層2に無電解Cuメッキ層3が積層されてい
る。また、他方の面には同様にAgペースト等により形
成した厚膜導体層4に無電解メッキ層5が積層された平
板状のストリップ線路6が形成されている。このストリ
ップ線路6の両側に隣接平行して、ガラス等の誘電損失
(tanδ)の小さい高誘電体部材7が配置されてい
る。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing a schematic structure of a microstrip line according to an embodiment of the present invention. In the structure shown in the figure, an electroless Cu plating layer 3 is laminated on one surface of an alumina ceramic substrate 1 on a thick film conductor layer 2 formed of Ag paste or the like as a ground layer. Further, a flat plate-like strip line 6 in which an electroless plating layer 5 is laminated on a thick film conductor layer 4 formed of Ag paste or the like is also formed on the other surface. High-dielectric members 7 having a small dielectric loss (tan δ) such as glass are arranged adjacent to and parallel to both sides of the strip line 6.

【0013】この高誘電体部材7は、例えばアルミナセ
ラミック基板1にAg厚膜導体4を印刷した後に形成さ
れ、次にAg厚膜導体4の上に無電解メッキ層5が形成
される。
The high dielectric member 7 is formed, for example, after the Ag thick film conductor 4 is printed on the alumina ceramic substrate 1, and then the electroless plating layer 5 is formed on the Ag thick film conductor 4.

【0014】以上のような構成を有するマイクロストリ
ップラインにおいては、ストリップ線路6にマイクロ波
電流が流れると、表皮効果のため大部分の電流は無電解
Cuメッキ層5のエッジ部分に集中するが、一部はAg
厚膜導体層4の無電解Cuメッキ層5との界面の構造欠
陥部分に流れる。
In the microstrip line having the above structure, when a microwave current flows through the strip line 6, most of the current is concentrated on the edge portion of the electroless Cu plating layer 5 due to the skin effect. Some are Ag
The thick film conductor layer 4 flows to the structural defect portion at the interface with the electroless Cu plating layer 5.

【0015】本発明においては、このエッジ部分に隣接
する高誘電体部材7に電磁界分布が引き寄せられ、従来
はAg厚膜導体層4の欠陥部分に流れていた電流が、欠
陥部分よりも導電率の高い無電解Cuメッキ層5に多く
流れるようになる。したがって、伝送損失がさらに減少
する。
In the present invention, the electromagnetic field distribution is attracted to the high dielectric member 7 adjacent to the edge portion, and the current flowing in the defective portion of the Ag thick film conductor layer 4 in the prior art is more conductive than the defective portion. A large amount will flow into the high electroless Cu plating layer 5. Therefore, the transmission loss is further reduced.

【0016】図2は、上述のような構造を有するストリ
ップ線路6の断面と、その断面を流れるマイクロ波電流
の電流密度分布との関係をグラフ8によって示すもので
ある。このグラフ8から理解されるように、電流密度分
布は高誘電体部材7と隣接する無電解Cuメッキ層5の
エッジ部分で急激に高くなっている。
FIG. 2 is a graph 8 showing the relationship between the cross section of the strip line 6 having the above structure and the current density distribution of the microwave current flowing through the cross section. As understood from this graph 8, the current density distribution sharply increases at the edge portion of the electroless Cu plating layer 5 adjacent to the high dielectric member 7.

【0017】なお、本実施例では、ストリップ線路とし
て、Agペーストで形成した厚膜導体に無電解Cuメッ
キ層を形成することにより厚膜導体表面の導電率の低い
構造欠陥を補い表皮部分を高導電率化したものを示して
いるが、他の手段により表皮部分を高導電率化するもの
でもよいことは明らかである。
In this embodiment, as a strip line, an electroless Cu plating layer is formed on a thick film conductor formed of Ag paste to compensate for a structural defect having a low conductivity on the surface of the thick film conductor and to improve the skin portion. Although the conductive material is shown, it is obvious that the surface portion may be made to have a high conductivity by other means.

【0018】また、本実施例では、高誘電体部材として
ガラスを使用しているが、誘電率の大きな誘電体部材で
あれば他の部材でもよい。
Further, in this embodiment, glass is used as the high dielectric member, but other members may be used as long as the dielectric member has a large dielectric constant.

【0019】[0019]

【発明の効果】以上のように、本発明によれば、例えば
ストリップ線路の表皮部分を高導電率化したマイクロス
トリップラインにおいて、ストリップ線路両側に高誘電
体部材を隣接配置することにより、電流密度分布を導電
率の高い表皮部分に集中させることができるので、マイ
クロ波の伝送損失を大幅に低減することができる。
As described above, according to the present invention, for example, in a microstrip line in which the skin portion of the strip line has a high conductivity, by arranging high dielectric members adjacent to both sides of the strip line, the current density can be increased. Since the distribution can be concentrated on the skin portion having high conductivity, the microwave transmission loss can be significantly reduced.

【0020】従って、マイクロ波回路において信号伝送
効率を大幅に向上させることができ、回路を高性能化す
ることができる。
Therefore, the signal transmission efficiency in the microwave circuit can be greatly improved, and the circuit can be improved in performance.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例によるマイクロストリップラ
インの概略の構造を示す断面斜視図である。
FIG. 1 is a sectional perspective view showing a schematic structure of a microstrip line according to an embodiment of the present invention.

【図2】図1のマイクロストリップラインのストリップ
線路付近の断面とそのストリップ線路に流れるマイクロ
波の電流密度分布との関係を示すグラフである。
FIG. 2 is a graph showing a relationship between a cross section of the microstrip line of FIG. 1 near a strip line and a current density distribution of microwaves flowing in the strip line.

【符号の説明】[Explanation of symbols]

1 アルミナセラミック基板 2、4 Ag厚膜導体層 3、5 無電解Cuメッキ層 6 ストリップ線路 7 高誘電体部材 8 電流密度グラフ 1 Alumina ceramic substrate 2, 4 Ag thick film conductor layer 3, 5 Electroless Cu plating layer 6 Strip line 7 High dielectric member 8 Current density graph

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 一方の面にグランド層として導電体層を
備えた誘電体基板の他方の面にストリップ状の導電体線
路を形成したマイクロストリップラインにおいて、 前記導電体線路に隣接して前記誘電体基板上に前記導電
体線路の周囲の誘電率よりも高い誘電率を有する誘電体
部材を配置したことを特徴とするマイクロストリップラ
イン。
1. A microstrip line in which a strip-shaped conductor line is formed on the other surface of a dielectric substrate having a conductor layer as a ground layer on one surface, the dielectric strip being adjacent to the conductor line. A microstrip line, wherein a dielectric member having a dielectric constant higher than that of the periphery of the conductor line is arranged on a body substrate.
【請求項2】 前記導体線路は表皮部分の導電率が内部
の導電率よりも高いことを特徴とする請求項1に記載の
マイクロストリップライン。
2. The microstrip line according to claim 1, wherein the conductor line has a higher conductivity in a skin portion than an inner conductivity.
【請求項3】 前記導電体線路は、Ag厚膜導体の上に
無電解Cuメッキ層を形成したものであることを特徴と
する請求項1または2のいずれか1項に記載のマイクロ
ストリップライン。
3. The microstrip line according to claim 1, wherein the conductor line is formed by forming an electroless Cu plating layer on an Ag thick film conductor. .
【請求項4】 前記導電体線路に隣接する誘電体部材の
誘電率が、前記誘電体基板の誘電率よりも高いことを特
徴とする請求項1から3までのいずれか1項に記載のマ
イクロストリップライン。
4. The micro according to claim 1, wherein the dielectric member adjacent to the conductor line has a dielectric constant higher than that of the dielectric substrate. Strip line.
JP5089354A 1993-03-24 1993-03-24 Microstrip line Pending JPH06283907A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5089354A JPH06283907A (en) 1993-03-24 1993-03-24 Microstrip line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5089354A JPH06283907A (en) 1993-03-24 1993-03-24 Microstrip line

Publications (1)

Publication Number Publication Date
JPH06283907A true JPH06283907A (en) 1994-10-07

Family

ID=13968381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5089354A Pending JPH06283907A (en) 1993-03-24 1993-03-24 Microstrip line

Country Status (1)

Country Link
JP (1) JPH06283907A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001453A2 (en) * 1999-06-29 2001-01-04 Sun Microsystems, Inc. Method and apparatus for adjusting electrical characteristics of signal traces in layered circuit boards
US6798320B2 (en) * 2001-01-29 2004-09-28 Murata Manufacturing Co., Ltd. Microstrip line having a line electrode with integral edge electrodes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001453A2 (en) * 1999-06-29 2001-01-04 Sun Microsystems, Inc. Method and apparatus for adjusting electrical characteristics of signal traces in layered circuit boards
WO2001001453A3 (en) * 1999-06-29 2001-07-26 Sun Microsystems Inc Method and apparatus for adjusting electrical characteristics of signal traces in layered circuit boards
US6798320B2 (en) * 2001-01-29 2004-09-28 Murata Manufacturing Co., Ltd. Microstrip line having a line electrode with integral edge electrodes

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