JP2005123850A - High frequency line and resonator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small high frequency circuit by remarkably increasing a phase amount change at the time of passing a high frequency line in the high frequency line where high frequency signals of a microwave band and a milliwave band are transmitted, radiated, filtered, selected and amplified and the phase amount is controlled. <P>SOLUTION: Transmission regions 5 where convex-like projections 6 are disposed toward signal conductor wiring and transmission regions 4 where they are not disposed are repetitively set in a ground conductor 3 in a region facing signal conductor wiring 2 along an advancing direction. Thus, a pass phase amount per unit length, which is given to the transmitted high frequency signal, can be increased. Consequently, the high frequency circuit can be miniaturized. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a high-frequency line that transmits high-frequency signals such as a microwave band and a millimeter-wave band, and controls radiation, filtering, selection, amplitude, and phase amount.

  A microstrip line and a strip line cross-sectional configuration used as a conventional high-frequency line are shown in FIGS. 10A and 10B, respectively (see, for example, Non-Patent Document 1). For example, in FIG. 10A, a signal conductor wiring 2 is formed on a dielectric or semiconductor substrate 1, and a ground conductor layer 3 is formed on the back surface of the substrate 1. When high frequency power is input to the microstrip line, an electric field is generated in the direction from the signal conductor wiring 2 to the ground conductor 3, and a magnetic field is generated in a direction surrounding the signal conductor wiring perpendicular to the electric field lines. It propagates in the length direction orthogonal to the width direction of the conductor wiring 2.

The amount of phase change added to the high-frequency signal when transmitting through these transmission lines can be determined depending on the dielectric constant ε, the line width W, the line height H, etc. of the substrate material. For example, since the phase amount increases as ε increases, generally, a high-frequency circuit often uses a conductor material having a high dielectric constant for the purpose of downsizing. When the high-frequency line is used in the air, the dielectric constant ε of the high-frequency line corresponds to a value larger than the dielectric constant 1 of air. Therefore, it is possible to efficiently confine the electromagnetic field of the high-frequency signal to be transmitted in the substrate material by setting W large or H small. In other words, the phase change of the passing signal can be set large by setting W large or H small. A large phase change leads to a reduction in circuit size.
By Inder Bahl and Prakash Bhartia, “Microwave Solid State Circuit Design”, 2nd edition, published by Wiley-Interscience, p. 33-40

  However, in a normal microstrip line or strip line, there is a limit to effectively increasing the phase amount and reducing the circuit area. For example, in a microstrip line, the effective dielectric constant of the line cannot exceed the dielectric constant of the substrate material, no matter how much conditions such as line width and substrate thickness are adjusted. Further, in the strip line, it is impossible to change the effective dielectric constant even if the line condition is changed, and there is a limit in increasing the passing phase amount in any line.

  The present invention solves the above-described conventional problems, and an object of the present invention is to provide a small high-frequency circuit by greatly increasing a change in phase amount when passing through a high-frequency line.

  In order to solve the above-described conventional problems, the high-frequency line of the present invention is configured such that a part of the ground conductor formed on the back surface of the substrate faces the signal conductor wiring so that the signal conductor wiring has a convex shape with respect to a predetermined height. At least a plurality of adjacent additional ground conductor structures are arranged. With this configuration, it is possible to effectively increase the passing phase of the high-frequency signal traveling through the high-frequency line of the present invention.

  According to the high-frequency line of the present invention, it is possible to obtain an extremely high passing phase amount compared with the conventional high-frequency line, and therefore it is possible to provide a very small and area-saving high-frequency circuit.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
FIG. 1A is a top view of the high-frequency line according to Embodiment 1 of the present invention, and cross-sectional views taken along line B1-B2, line C1-C2, and line D1-D2 in FIG. added to b), (c), and (d), respectively. In FIG. 1, the same components as those in FIG. 10 will be described using the same reference numerals.

  In FIG. 1, a signal conductor wiring 2 is formed on the front surface through a substrate 1, and a ground conductor 3 is formed on the back surface. Here, the closest distance between the ground conductor 3 and the signal conductor wiring 2 is the first transmission area 4 cut by the line segment C1-C2 and the second transmission area 5 cut by the line segment D1-D2 ′. And are set differently. That is, the transmission line cross-sectional structure in the first transmission region 4 is nothing but a normal microstrip line, but the transmission line cross-sectional structure in the second transmission region 4 includes at least a part including a portion facing the signal conductor wiring 2. In the region, the additional ground conductor 6 is added in the substrate, the ground structure has a convex cross section, and the closest distance between the signal conductor wiring 2 and the ground structure is partially reduced.

  As is clear from the transmission line cross-sectional structure in the signal transmission direction shown in FIG. 1B, in the high-frequency line of the present invention in which the first transmission region 4 and the second transmission region 5 are alternately set in the traveling direction. Since there are irregularities in the surface height of the grounding structure, it is possible to set a larger amount of transmission signal passing phase than conventional high-frequency lines.

  2 shows a cross-sectional structure of the second transmission region in the first comparative example of the present invention, in the second transmission region 5, by reducing a part of the space 9 from the ground conductor 3, It is also possible to create a structure away from the signal conductor wiring. However, as apparent from FIG. 2, the grounding structure closest to the signal conductor wiring 2 is not the lowermost part of the space 9 but the surface of the region 10 where the space 9 is not reduced from the grounding conductor 3, and the first transmission The discontinuity of the ground structure is less likely to occur between the area and the second transmission area. Therefore, in order to obtain the desired effect of increasing the phase amount in the high-frequency line of the present invention, the width of the space 9 must be increased in the transmission line cross-sectional structure of the second transmission region in FIG. An increase in the width of the space 9 causes an increase in the area occupied by the circuit, which is not preferable in practice. From the above points, the high-frequency line of the present invention is different from the comparative example 1 shown in FIG.

  As Comparative Example 2 of the present invention, when the first transmission region is deleted from Embodiment 1 of the present invention and the entire transmission region is formed by the second transmission region in the high-frequency circuit of the present invention, grounding is performed. Since there are no irregularities on the conductor layer, the effect of increasing the phase rotation of the transmission signal, which is the object of the present invention, cannot be obtained. From the above points, Comparative Example 2 has a different structure from the high-frequency line of the present invention.

  In the high-frequency circuit of the present invention, as shown in FIG. 3 which shows the transmission line cross-sectional structure of the second transmission region 5, the width of the additional ground conductor 6 is a width that does not oppose both edges 7 of the signal conductor wiring width. Is preferably set. Specifically, the width of the additional ground conductor 6 is preferably 50% or less of the signal conductor wiring. When the additional ground conductor 6 is brought close to the signal conductor wiring 2 in a region not facing both edges 7 of the signal conductor wiring, the high-frequency current flowing through the signal conductor wiring also flows in the region 8 facing the nearest additional ground conductor 6. Therefore, it is possible to avoid the concentration of high-frequency currents on both edges 7 of the signal conductor wiring 2 that causes an increase in transmission loss in a normal microstrip line. That is, in a preferred example of the high-frequency line of the present invention, it is possible to achieve both a reduction in circuit size and a reduction in loss.

  Further, the lower limit value of the width of the additional ground conductor 6 is limited by the conductor skin depth in the transmission frequency band. For example, a width of about 1 micron is the lower limit value at 1 GHz. Further, in the high frequency line of the present invention, the characteristics of the respective transmission line parts in the first transmission region 4 and the second transmission region 5 are avoided in order to avoid the problem of impedance mismatch due to the addition of the additional ground conductor 6. It is possible to optimize the impedance setting. For example, the transmission line characteristic impedance Z4 derived from the transmission line cross-sectional structure in the first transmission region 4, the transmission line characteristic impedance Z5 derived from the transmission line cross-sectional structure in the second transmission region 5, By setting the condition of Z5 <Z <Z4 between the characteristic impedance Z of the transmission line required for the transmission line, it is possible to reduce the increase of the passage loss. In addition, as a means for setting the predetermined characteristic impedance, the wiring width of the signal conductor wiring in the first transmission region is set larger than the wiring width of the signal conductor wiring in the second transmission region, and the transmission line is always set. It is also possible to set the characteristic impedance of the transmission line led from the cross-sectional structure to a predetermined impedance.

  In the first embodiment of the present invention, the plurality of additional ground conductors need not have the same height, and can be set to a desired design value.

  In addition, as shown in FIGS. 4A and 4B, the cross-sectional structures of the first transmission region and the second transmission region, respectively, in another embodiment of the present invention, both additional ground conductors are In order to prevent connection in the signal traveling direction, an additional ground conductor is provided in both the first transmission region and the second transmission region, but the formation position is shifted in the width direction, and the convex portion of the ground conductor is By adopting a structure in which the two additional ground conductors are not connected at the contact points, more unevenness can be set in the ground conductor, and thus a further advantageous effect can be obtained. The effect of the high-frequency line of the present invention greatly depends on how much phase is rotated in the height portion of the additional ground conductor. That is, the effect becomes more prominent as the frequency becomes higher. For this reason, the high-frequency line of the present invention can obtain the same characteristics as a high-frequency line created using a circuit board that apparently has different frequency dispersion of dielectric constant. That is, the same effect as that of a microstrip line using a material having a high dielectric constant at a high frequency and a low dielectric constant at a low frequency as a circuit board can be exhibited.

  For the additional ground conductor in the high-frequency line of the present invention, it is preferable to use a commonly used material such as copper or gold known as a metal having high conductivity. Further, in order to obtain an increase in the amount of phase, it is preferable to arrange the additional ground conductors adjacent to each other at the smallest possible cycle. For example, additional ground conductors with a region length of 10 microns can be formed at 10 micron intervals. However, for applications where transmission loss is a problem, the region length is limited, and as a guideline, it is preferable to set the value of the skin depth at the operating frequency to the minimum value. For example, at a frequency of 1 GHz, it is preferable that the additional ground conductor has a lower limit of about 1 micron.

  In addition, regarding the shape of the additional ground conductor in the high-frequency line of the present invention, it is possible to process the shape of the additional ground conductor facing the signal conductor wiring into a shape having an arbitrary curvature at a corner rather than a rectangle. It is preferable from the viewpoint of reduction. The transmission loss of the microstrip line or strip line is caused by the current concentration at both edges of the signal conductor wiring, and the conductor loss in the ground conductor can be almost ignored, but in the high-frequency line of the present invention, the additional ground conductor This is because the current concentration in the ground conductor cannot be ignored and needs to be avoided if the width of the conductor is narrow or the corner portion of the convex portion of the additional ground conductor is rectangular.

  As an example of the first high-frequency line of the present invention, a high-frequency line 1A was prepared using a resin having a dielectric constant of 10.2 and a thickness of 250 microns as a substrate. A signal conductor wiring having a width of 250 microns and a length of 1500 microns was formed on the surface of the substrate. A ground conductor was provided on the back side of the substrate. All conductors were made of gold and the conductor thickness was 2 microns. The high-frequency line has a structure in which a first transmission region having a region length of 8 microns and a second transmission region having a region length of 2 microns are connected in series. That is, along the signal transmission direction, the ground structure is close to the signal conductor wiring immediately by a length of 10 microns and 2 microns long. The transmission line cross-sectional structure in the first transmission region is an ordinary microstrip line, but the transmission line cross-sectional structure in the second transmission region is processed into a convex shape in which the lower part is connected to the ground conductor on the back of the substrate. An additional ground conductor was set in the substrate. The size of each additional ground conductor is a rectangular parallelepiped having a width of 2 microns and a height of 150 microns, and the closest distance between the signal conductor wiring and the ground structure is set to 100 microns in the second transmission region. The number of repetitions of the first transmission area and the second transmission area was set to 150 times. The passing phase amount of the high-frequency line 1A at 60 GHz was 402 degrees.

  On the other hand, as a comparative example, a normal microstrip line 1B having a structure in which the second transmission region is subtracted from the high-frequency line 1A was prepared. The passing phase amount at 60 GHz of the normal microstrip line 1B was 330 degrees. From the embodiment, it was found that the high-frequency line 1A was able to obtain a 22% increase in passing phase amount compared to the normal microstrip line 1B.

  Further, in the high frequency line 1C in which the width setting of the convex portion of the second transmission region in the high frequency line 1A is reset from 2 microns to 100 microns, the passing phase amount at 60 GHz is 432 degrees, which is a normal microstrip. An increase in the passing phase amount of 31% was obtained compared to the line 1B.

  In the first embodiment, the number of repetitions of the first transmission area and the second transmission area is set to 150 times. The number of repetitions is at least 2 times, more preferably 10 times or more, and even more preferably 100 times or more. That is, it is preferable that the post portion is fine within a range in which the thickness of the post portion when setting one "repetition" does not cause a significant increase in conductor loss, and within the range where this condition is satisfied. It is preferable to set as many repetitions as possible.

(Embodiment 2)
FIG. 5A is a top perspective view of the high-frequency line according to Embodiment 2 of the present invention. FIG. 5 is a cross-sectional view taken along line segment B1-B2, line segment C1-C2, and line segment D1-D2. It added to (b), (c), (d), respectively. In FIG. 5, the same components as those in FIG.

  In FIG. 5, a ground conductor 3 is formed on each of the front and back surfaces of a substrate 1, and a signal conductor wiring 2 is formed inside the substrate to form a so-called strip line structure. Here, the closest distance between the ground conductor 3 and the signal conductor wiring 2 is that the first transmission region 4 cut along the line segment C1-C2 and the second transmission region 5 cut off at the line segment D1-D2. Then, it is set differently. That is, the transmission line cross-sectional structure in the first transmission region 4 is nothing but a normal strip line, but the transmission line cross-sectional structure in the second transmission region is at least a part of the region including a portion facing the signal conductor wiring 2. The additional ground conductor 6 is added to the inside of the substrate, and the high-frequency ground structure formed by adding the ground conductor 3 and the additional ground conductor 6 has a cross section that is convex toward the signal conductor wiring 2. The closest distance from the high-frequency grounding structure is partially reduced.

  As is clear from the transmission line cross-sectional structure in the signal transmission direction shown in FIG. 5B, in the high-frequency line of the present invention in which the first transmission region 4 and the second transmission region 5 are alternately set in the traveling direction. Since there are irregularities in the surface height of the grounding structure, it is possible to set a larger amount of transmission signal passing phase than conventional high-frequency lines.

  Unlike a microstrip line or a coplanar line, the strip line has a structure in which the upper and lower sides of the signal conductor wiring are sandwiched between dielectrics, so that it is impossible in principle to control the effective dielectric constant of the line. That is, in the conventional strip line, there was no means for increasing the passing phase amount other than the use of the high dielectric constant substrate, but in the high frequency line structure of the present invention, the strip without using the high dielectric constant substrate. Even in the case of a line, it is possible to effectively increase the passing phase amount.

  Here, in the figure, an example in which the additional ground conductor 6 is added only to the ground conductor on the back surface of the substrate 1 is shown. However, in the second transmission region, the additional ground conductor is added to both the front and back ground conductors. It is possible to obtain a greater effect. In addition, a first transmission region in which an additional ground conductor is added to the ground conductor on the front side and a second transmission region in which the additional ground conductor is added to the ground conductor on the back side are alternately formed along the traveling direction. Even with a high-frequency line having a structure, the advantageous effects of the present invention can be obtained.

  In the high-frequency circuit of the present invention, as shown in FIG. 6 which shows the transmission line cross-sectional structure of the second transmission region 5 in the preferred example of the present invention, the width that does not oppose both edges 7 of the signal conductor wiring width. Preferably, the width of the additional ground conductor 6 is set. When the additional ground conductor 6 is brought close to the signal conductor wiring 2 in a region not facing both edges 7 of the signal conductor wiring, the high-frequency current flowing through the signal conductor wiring also flows in the region 8 facing the nearest additional ground conductor 6. Therefore, it is possible to avoid the concentration of high-frequency currents on both edges 7 of the signal conductor wiring 2 that causes an increase in transmission loss in a normal microstrip line. That is, in a preferred example of the high-frequency line of the present invention, it is possible to achieve both a reduction in circuit size and a reduction in loss.

  As an example of the second high-frequency line of the present invention, a high-frequency line 2A was prepared using a resin having a dielectric constant of 10.2 and a thickness of 500 microns as a substrate. A signal conductor wiring having a width of 90 microns and a length of 1500 microns was formed at the center of the substrate, and ground conductors were provided on the front and back surfaces. All conductors were made of gold and the conductor thickness was 2 microns. In the high-frequency line, a first transmission region having a region length of 8 microns and a second transmission region having a region length of 2 microns were disposed on the entire surface of the line along the traveling direction. That is, along the signal transmission direction, the ground structure is close to the signal conductor wiring immediately by a length of 10 microns and 2 microns long. In the first transmission region, the transmission line cross-sectional structure is a normal strip line, but in the transmission line cross-sectional structure in the second transmission region, it was processed into a convex shape with its lower part connected to the ground conductor on the back of the substrate An additional ground conductor was set in the substrate. The size of each additional ground conductor is a rectangular parallelepiped having a width of 2 microns and a height of 150 microns, and the closest distance between the signal conductor wiring and the ground structure is set to 100 microns in the second transmission region. The number of repetitions of the first transmission area and the second transmission area was set to 150 times. The passing phase amount of the high-frequency line 2A at 60 GHz was 426 degrees.

  On the other hand, as a comparative example, a normal strip line 2B having a structure in which the additional ground conductor in the second transmission region is subtracted from the high-frequency line 2A was prepared. The passing phase amount at 60 GHz of a normal strip line was 366 degrees. From the embodiment, it was found that the high-frequency line 1 was able to obtain a 16% increase in the passing phase amount as compared with a normal microstrip line.

(Embodiment 3)
FIG. 7A is a top view of the resonator according to the third embodiment of the present invention. FIG. 7A is a cross-sectional view taken along line B1-B2, line C1-C2, and line D1-D2 in FIG. added to b), (c), and (d), respectively. In FIG. 7, the same components as those in FIGS.

  In FIG. 7, a signal conductor wiring 2 is formed on the front surface via a substrate 1 and a ground conductor 3 is formed on the back surface, thereby forming a microstrip line structure. Both ends 11 and 12 in the traveling direction of the line are open-terminated and function as a half-wave resonator. Here, the closest distance between the ground conductor 3 and the signal conductor wiring 2 is that the first transmission region 4 cut along the line segment C1-C2 and the second transmission region 5 cut off at the line segment D1-D2. Then, it is set differently. That is, the resonator cross-sectional structure in the first transmission region 4 is nothing but a normal microstrip line, but the resonator cross-sectional structure in the second transmission region includes at least a part including a portion facing the signal conductor wiring 2. In the region, the additional ground conductor 6 is added in the substrate, the ground structure has a convex cross section, and the closest distance between the signal conductor wiring 2 and the ground structure is partially reduced.

  As is clear from the resonator cross-sectional structure in the signal transmission direction shown in FIG. 7B, in the resonator of the present invention in which the first transmission region 4 and the second transmission region 5 are alternately set in the traveling direction. Since there is unevenness in the surface height of the grounding structure, the amount of phase rotation in the resonator is increased and the effective resonator length is increased compared to a resonator using a normal microstrip line structure Therefore, the resonance frequency can be effectively reduced.

  In the above example, the third embodiment using a microstrip line-like transmission line has been described. However, the resonator having the advantageous effects of the present invention can also be obtained by using a stripline-like transmission line structure. Can be provided.

  Further, an additional ground conductor may be provided in both the first transmission region and the second transmission region. In this case, the formation position of the additional ground conductor in both regions is shifted in the width direction so that adjacent additional ground conductors are not connected in the signal traveling direction, and the convex portion of the ground conductor is closest to the signal conductor wiring. By adopting a structure in which the two additional ground conductors are not connected at the locations, more unevenness can be set in the ground conductor, so that a more advantageous effect can be obtained.

  In the above-described example, the example of the resonator according to the third embodiment is shown for the half-wave resonator with both ends open, but both ends are open, grounded, connected, or branched from the main circuit. By doing so, the present embodiment is applied to a planar resonator exhibiting various resonances such as a quarter wavelength, a half wavelength, and one wavelength, or an open stub or a short stub used as a matching circuit in a high frequency circuit. The resonator with the advantageous effects of the present invention can also be provided by applying.

  Further, in the resonator according to the third embodiment of the present invention, as shown in FIG. 8, the cross-sectional structure of the resonator in the second transmission region 5 is additionally grounded with a width that does not face both edges 7 of the signal conductor wiring width. It is preferable to set the width of the conductor 6. When the additional ground conductor 6 is brought close to the signal conductor wiring 2 in a region not facing both edges 7 of the signal conductor wiring, the high-frequency current flowing through the signal conductor wiring also flows in the region 8 facing the nearest additional ground conductor 6. Therefore, it is possible to avoid the concentration of high-frequency currents on both edges 7 of the signal conductor wiring 2 that causes an increase in transmission loss in a normal microstrip line. That is, in the preferred example of the resonator according to the third embodiment of the present invention, it is possible to achieve both reduction in circuit size and reduction in loss, that is, acquisition of a high Q value. Specifically, the width of the additional ground conductor 6 is preferably 50% or less of the signal conductor wiring.

  In addition, in order to obtain the above-described effect of improving the Q value, as shown in FIG. 9, the location where the second transmission region is periodically set is not over the entire length of the resonator, but only in the central portion. You may limit to. In the half-wavelength resonator, the current concentrates only at both edges of the signal conductor wiring at the substantially central portion of the resonator. When the purpose is to improve the Q value, it is a current concentration portion. This is because the purpose of the present invention, that is, acquisition of a high Q value and circuit miniaturization can be achieved only by arranging an additional grounding conductor at the center of the resonator.

  As an example of the resonator according to the third embodiment of the present invention, a resonator 3A was prepared using a resin having a dielectric constant of 10.2 and a thickness of 250 microns as a substrate. A signal conductor wiring having a width of 250 microns and a length of 1500 microns was formed on the surface of the substrate. A ground conductor was provided on the back side of the substrate. All conductors were made of gold and the conductor thickness was 2 microns. The resonator has a structure in which a first transmission region having a region length of 8 microns and a second transmission region having a region length of 2 microns are connected in series. That is, along the signal transmission direction, the ground structure is close to the signal conductor wiring immediately by a length of 10 microns and 2 microns long. In the first transmission region, the resonator cross-sectional structure is an ordinary microstrip line, but in the second transmission region, the resonator cross-sectional structure is processed into a convex shape with the lower part connected to the ground conductor on the back of the substrate. An additional ground conductor was set in the substrate. The size of each additional ground conductor is a rectangular parallelepiped having a width of 2 microns and a height of 150 microns, and the closest distance between the signal conductor wiring and the ground structure is set to 100 microns in the second transmission region. The second transmission region was set 150 times in the length direction. The resonator 3A exhibited a half-wave resonance at 45.7 GHz, and a resonator Q value of 202 was obtained.

  On the other hand, as Comparative Example 3B, a normal microstrip resonator having a structure in which the second transmission region is subtracted from the resonator 3A was prepared. A normal microstrip resonator exhibited half-wave resonance at 50.9 GHz, and 189 was obtained as the Q value of the resonator. From the example of the third embodiment, it was found that the resonator 3A was able to obtain an effect of increasing the effective resonator length by 10% compared with the normal microstrip resonator 3B.

  The high-frequency line and resonator according to the present invention can increase the amount of passing phase per unit length given to a high-frequency signal to be transmitted, and as a result can contribute to miniaturization of the high-frequency circuit. Further, it can be widely applied to applications in the communication field such as filters, antennas, phase shifters, switches, and oscillators, and can also be used in various fields that use wireless technologies such as power transmission and ID tags.

(A) Top view of the high-frequency line in the first embodiment of the present invention (b) Cross-sectional view taken along line B1-B2 in the top view of the high-frequency line in the first embodiment of the present invention (c) Implementation of the present invention Sectional view taken along line C1-C2 in the top view of the high-frequency line in the first embodiment (d) Section view taken along line D1-D2 in the top view of the high-frequency line in the first embodiment of the present invention Transmission line structure sectional view in the second transmission region in Comparative Example 1 of the present invention Sectional drawing of the 2nd transmission area | region in the preferable example of the high frequency line of Embodiment 1 of this invention The figure which shows the preferable example of the high frequency line of Embodiment 1 of this invention (a) Transmission line structure sectional drawing of the 1st transmission area (b) Transmission line structure sectional drawing of the 2nd transmission area (A) Top perspective view of the high-frequency line according to the second embodiment of the present invention (b) Cross-sectional view taken along the line B1-B2 in the top perspective view of the high-frequency line according to the second embodiment of the present invention (c) Sectional view taken along line C1-C2 in the top perspective view of the high-frequency line in the second embodiment (d) Sectional view taken along line D1-D2 in the top perspective view of the high-frequency line in the second embodiment of the present invention Sectional drawing of the 2nd transmission area | region in the preferable example of the high frequency line of Embodiment 2 of this invention (A) Top view of the resonator according to the third embodiment of the present invention (b) Cross section along line B1-B2 in the top view of the resonator according to the third embodiment of the present invention (c) Implementation of the present invention Sectional view at line segment C1-C2 in the top view of the resonator in the third embodiment (d) Sectional view at line segment D1-D2 in the top view of the resonator in the third embodiment of the present invention Sectional drawing of the 2nd transmission area | region in the preferable example of the resonator of Embodiment 3 of this invention Top view of a preferable example of the resonator according to the third embodiment of the present invention. Transmission line cross-sectional structure of conventional high-frequency line (a) Microstrip line diagram (b) Stripline diagram

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Signal conductor wiring 3 Ground conductor 4 1st transmission area 5 2nd transmission area 6 Additional ground conductor 7 Both edges of signal conductor wiring 8 Other than both edges of signal conductor wiring in which current does not concentrate in a normal transmission line Area 9 Space 10 Ground conductor 11, 12 Both ends of resonator

Claims (7)

A first transmission region in which a signal conductor wiring is arranged on the surface of a substrate made of a dielectric or a semiconductor, and a ground conductor provided at a position facing the signal conductor wiring on the back surface of the substrate is uniformly set on the back surface of the substrate And the ground conductor has a cross section that is convex toward the signal conductor wiring, and the closest distance between the signal conductor wiring and the ground conductor is set shorter than the first transmission region. And a second transmission region, wherein the second transmission region is alternately set over a signal transmission direction. 2. The transmission line according to claim 1, wherein the width of the convex portion is narrower than the entire width of the signal conductor wiring in the second transmission region. The first characteristic impedance determined from the cross-sectional structure of the transmission line structure in the first transmission region is higher than the design characteristic impedance, and the second characteristic determined from the cross-sectional structure of the transmission line structure in the second transmission region The transmission line according to claim 1, wherein the impedance is set lower than the design characteristic impedance. The transmission line according to claim 1, wherein the first signal conductor wiring width in the first transmission region is set wider than the second signal conductor wiring width in the second transmission region. A cross section in which the signal conductor wiring is disposed on the front surface of the substrate made of a dielectric or semiconductor, and the ground conductor provided at the position facing the signal conductor wiring on the back surface of the substrate is convex toward the signal conductor wiring. The first transmission region having and the second transmission region having a cross section in which the ground conductor is convex toward the signal conductor wiring are alternately set over the signal transmission direction, A transmission line, wherein the convex shape portion of the first transmission region and the convex shape portion of the second transmission region are not connected at a position closest to the signal conductor wiring. A signal conductor wiring is disposed inside a substrate made of a dielectric or semiconductor sandwiched between a first ground conductor formed on the front surface and a second ground conductor formed on the back surface, and faces the signal conductor wiring. A first transmission region provided at a location where the first or second ground conductor is uniformly set on the substrate surface, and either the first or second ground conductor is connected to the signal conductor wiring. A second transmission region having a cross section that is convex toward the signal transmission line, wherein a closest distance between the signal conductor wiring and the ground conductor is set shorter than the first transmission region. A transmission line characterized by being alternately set over the transmission direction. A first transmission region in which a signal conductor wiring is arranged on the surface of a substrate made of a dielectric or a semiconductor, and a ground conductor provided at a position facing the signal conductor wiring on the back surface of the substrate is uniformly set on the back surface of the substrate And the ground conductor has a cross section that is convex toward the signal conductor wiring, and the closest distance between the signal conductor wiring and the ground conductor is set shorter than the first transmission region. The second transmission region is alternately set over the signal transmission direction, and both ends of the transmission direction are terminated by grounding or opening, and a resonator exhibits a resonance phenomenon at a predetermined frequency.

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