【發明所屬之技術領域】 本發明是關於具備真空外圍器的平坦的平面型影像顯 示裝置、製造該影像顯示裝置的方法、以及封合材充塡裝 置。 【發明之背景】 近年來正在開發一種顯不裝置，係排列著許多電子放 出兀件（以下簡稱爲發射體）且將其配置於螢光面的對面，以 作爲下一世代的輕量•薄型的平面型顯示裝置。至於“發 射體係假定爲電場放出型或表面傳導型的元件。一般而 言’採用電場放出型電子放出元件作爲發射體的顯示裝置 係被稱爲“場發射型顯示器（以下簡稱F E D ) ” ，而採用表 面傳導型電子放出元件作爲發射體的顯示裝置係被稱爲“ 表面傳導型電子放出顯示器（以下簡稱S E D )” 。 例如：F E D —般是具備：隔開預定的間隙呈對面配 置的前面基板以及後面基板，這些基板係藉由矩形框狀的 側壁將彼此的周緣部互相接合在一起，而構成真空外圍器 。在前面基板的內面係形成螢光幕，在後面基板的內面係 設有許多個發射體以作爲激勵螢光體令其發光的電子放出 源。又，爲了支承加諸在於後面基板及前面基板身上的大 氣壓力，係在於這兩個基板之間配設著複數個支承構件。 後面基板側的電位大致上係0 V，而螢光面上則被施 加陽極電壓V a 。然後，將發射體放出的電子束照射到構 成螢光幕的紅、綠、藍的螢光體，藉由使得螢光體發光來 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I---------A------1T------A 貞- I (請先閱讀背面之注意事項再填寫本頁)[Technical field to which the invention belongs] The present invention relates to a flat, flat-type image display device including a vacuum peripheral device, a method of manufacturing the image display device, and a sealing material filling device. [Background of the invention] In recent years, a display device is being developed, which is arranged with many electron emitting elements (hereinafter referred to as emitters) and arranged on the opposite side of the fluorescent surface as a lightweight and thin type for the next generation. Flat display device. As for "the emission system is assumed to be an electric field emission type or surface conduction type element. Generally, a display device using an electric field emission type electron emission element as an emitter is called a" field emission display (hereinafter referred to as FED) ", and A display device using a surface-conduction electron emission element as an emitter is called a "surface-conduction electron emission display (hereinafter referred to as SED)." For example: FED is generally equipped with: a front substrate disposed opposite a predetermined gap. And the rear substrate. These substrates are connected to each other by rectangular frame-shaped side walls to form a vacuum peripheral. The inner surface of the front substrate is formed with a fluorescent screen, and the inner surface of the rear substrate is provided. There are many emitters as electron emission sources that excite the phosphor to emit light. In addition, in order to support the atmospheric pressure applied to the rear substrate and the front substrate, a plurality of supports are arranged between the two substrates. The potential of the rear substrate side is approximately 0 V, and the anode surface is applied with an anode voltage V a. The red, green, and blue phosphors that make up the screen are irradiated with the electron beam emitted by the emitter. By making the phosphor emit light, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) I --------- A ------ 1T ------ A Zhen-I (Please read the precautions on the back before filling this page)
T 經濟部智慧时產笱資工消費合汴钍印契 A7 __B7__ 五、發明説明（2) 顯示影像。 這種F E D，係可將其前面基板與後面基板之間的間 隙設定在數mm以下，因此與目前被使用作爲電視機、電 腦用的顯示器的陰極射線管（C R T )比較之下，係可達 成輕量化、薄型化的效果。 在上述的平面型顯示裝置中，真空外圍器內部的真空 度係必須保持在例如：1 0 — 5〜1 0 — 6 P a。傳統的排氣 過程係採用將真空外圍器加熱至3 0 0 t程度的烘烤處理 ’以使該真空外圍器內部的表面吸附氣體釋放出來，但是 這種排氣方法仍然無法將表面吸附氣體充分地釋放出來。 因此，例如：日本特開平9 一 8 2 2 4 5號公報所揭 示的平板型顯示裝置的結構係：於被形成在前面基板的螢 光幕上的金屬背膜上，被覆一層T i 、Z r或者T i和Z r的合金所構成的除氣材的結構；或者將金屬背膜本身利 用上述的這種除氣材來形成的結構；或者在於影像顯示區 域內的電子放出元件以外的部分配置上述的這種除氣材的 結構。 然而，日本特開平9一82245號公報所揭示的平 板型顯示裝置，係在於一般的面板製程中形成除氣材，所 以除氣材的表面當然會受到氧化。除氣材，特別是其表面 活性程度很重要，所以表面已經氧化後的除氣材並無法獲 得充分的吸氣效果。 關於如何地提高真空外圍器內部的真空度的方法，有 人提出：將後面基板、側壁、前面基板置於真空裝置內， 本纸張尺度適用中國國家標準（CNS) A4規格（210><297公釐） ------------ (請先閱讀背面之注意事項再填寫本頁) 4 -5- 484167 A7 ____B7_ 五、發明説明（3) (請先閱讀背面之注意事項再填寫本頁) 在於真空氣相中對於這些構件進行烘烤、照射電子線以令 其釋放出表面吸附氣體之後，形成除氣膜，然後保持這種 狀態在真空氣相中，使用透明釉玻璃等，將側壁與後面基 板以及前面基板予以封合的方法。根據這種方法，可利用 電子線的洗淨效果使得表面吸附氣體充分的釋放出來，除 氣膜也不會受到氧化，可獲得充分的吸氣效果。而且不必 設置排氣管，不會造成影像顯示裝置的空間上的無謂浪費 〇 然而想要在真空中使用透明釉玻璃來進行封合的話， 必須將透明釉玻璃加熱到超過4 0 0 °C以上的高溫，這個 時候，將會從透明釉玻璃產生許多氣泡，導致真空外圍器 的氣密性、封合強度惡化，而有降低可靠性的問題。此外 ，就電子放出元件的特性而言，有時候最好是要避免超過 4 0 0 °C以上的高溫，如果是這種情況的話，最好不要採 用以透明釉玻璃來進行封合的方法。 【本發明之槪要】 經濟部智慧財產笱邑(工消費合泎社印製 本發明係有鑒於上述情事而開發完成的，其目的係在 於提供：既可很容易將外圍器予以封合，又可讓內部確保 高真空度的影像顯示裝置、其製造方法以及封合材充塡裝 置。 爲了達成上述目的，本發明的影像顯示裝置係具備： 具有後面基板以及面對該後面基板配置的前面基板的外圍 器；以及設在該外圍器內的許多電子放出元件， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐)* '~ 經濟部智慧时4¾¾工消費合itTI印踅 484167 A7 B7 --------_一 五、發明説明（4 ) 上述前面基板以及後面基板係在於周緣部上’利用低 熔點金屬封合材料直接或間接地封合在一起。 根據本發明的影像顯示裝置，低熔點金屬封合材料的 熔點最好是低於3 5 0 °C。而且，低熔點金屬封合材料最 好是採用銥或含銥的合金。 本發明的影像顯示裝置之製造方法係用來製造具備： 具有後面基板以及面對該後面基板配置的前面基板的外圍 器；以及設在該外圍器內的許多電子放出元件的影像顯示 裝置之方法，其特徵爲： 該方法係具備：沿著上述後面基板與上述前面基板之 間的封合面配置低熔點金屬封合材料的過程；以及將上述 後面基板與上述前面基板在真空氣相中加熱以使上述低熔 點金屬封合材料熔融，以直接或間接地將上述後面基板和 上述前面基板封合在一起。 又’根據本發明的影像顯示裝置之製造方法，低熔點 金屬封口材料的熔點最好是低於3 5 0 °C。而且，低熔點 金屬封合材料最好是採用銥或含銥的合金。此外，最好是 將真空氣相的真空度設定爲低於1 〇-3p a。 又’根據本發明的影像顯示裝置之製造方法，上述封 合過程係具備：將上述真空氣相加熱至超過2 5 〇以上 的溫度之後進行排氣的排氣過程；和在該排氣過程之後， 以較之上述排氣過程更低的溫度利用上述低熔點金屬封合 材料來將上述前面基板與上述後面基板之間的封合面予以 封合的過程；和將受到上述低熔點金屬封合材料封合之後 中國國^?T^Ta4規格(210X297公董)-：---- — I. - - = - ------ - S - - —11··-----n κϋ ; ί --------- ------- : - ------ i : ------ (請先閲讀背面之注意事項再填寫本頁) 484167 A7 B7 五、發明説明（5 ) (請先閲讀背面之注意事項再填寫本頁) 的上述外圍器回復到大氣壓的過程。而利用上述低熔點金 屬封合材料所進行的封合係可在於6 0〜3 0 0°C的溫度 下來進行。 此外，根據本發明的影像顯示裝置之製造方法，上述 封合過程中，係先將低熔點金屬封合材料配置於前面基板 與後面基板之間的封合面之後’令上述前面基板與上述後 面基板進行相對的移動，以進行封合。·此處的相對移動的 方向可以是三度空間內的任何一個方向，只要是可讓兩者 的距離接近的方向即可。此外，不僅可以只移動前面基板 或後面基板的其中一方，亦可移動雙方。 此外，本發明的影像顯示裝置之製造方法，係在於上 述前面基板與後面基板之間的封合面的至少其中一方上， 設置用來保持低熔點金屬封合材料的保持部，並將上述低 熔點金屬封合材料配置於這個保持部。 上述保持部是以：形成在封合面的溝；或者形成在封 合面上之由與低熔點金屬封合材料具有較高親和性的材料 所成的層爲佳。與低熔點金屬封合材料具有較高親和性的 材料是以：鎳、金、銀、銅或這些金屬的合金爲佳。 根據以上述方式構成的本發明的影像顯示裝置及其製 造方法，係可藉由採用低熔點金屬封合材料而在於真空氣 相中將構成外圍器的前面基板和後面基板予以封合起來， 並且是能夠以對於形成在後面基板上的電子放出元件等不 會造成熱傷害的低溫（30 0 °C以下的溫度）來進行封合 。此外，如果是根據傳統的製造方法的話，必須具備用來 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- 484167 A7 B7 6 五、發明説明（ 的好 明良 發常 本非 據率 依效 若氣 是排 但且 ，而 管 ， 細等 用管 氣細 排用 :氣 如排 fll 伋種 造這 構除 的免 氣可 μ1Ι· ij 捏 貝 行’ 進話 (請先閲讀背面之注意事項再填寫本頁) 因此，能夠製得具備內部可維持高真空度的外圍器且 可防止因電子放出元件的熱劣化等所引起的影像惡化之平 面型影像顯示裝置。 另外，本發明的其他影像顯示裝置係具備：具有後面 基板以及面對該後面基板配置的前面基板的外圍器；以及 設在該外圍器內的許多電子放出元件， 上述前面基板以及後面基板係利用基底層和被設置在 這個基底層上之與該基底層不同種類的金屬封合材層，而 被直接或間接地封合在一起。 另外，本發明的其他影像顯示裝置係具備：具有後面 基板、和面對該後面基板配置的前面基板、和配設在上述 前面基板的周緣部與上述捧面基板的周緣部之間的側壁之 外圍器；以及設在該外圍器的內側的複數像素顯示元件， 經齊邹和曰慧財4¾員工消#合itfi印製 上述前面基板與側壁之間，或上述後面基板與側壁之 間的至少其中一方，係利用基底層和被設置在這個基底層 上之與該基底層不同種類的金屬封合材層，而被封合在一 起。 本發明的影像顯示裝置之製造方法，係用來製造具備 :具有後面基板、和面對該後面基板配置的前面基板的真 空外圍器；以及設在該外圍器的內側的複數像素顯示元件 之影像顯示裝置之方法，其特徵爲： 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9- 484167 A7 B7 五、發明説明（7) 該方法具備： (請先閲讀背面之注意事項再填寫本頁) 沿著上述後面基板與上述前面基板之間的封合面形成 基底層的過程；和將與上述基底層不同種類的金屬封合材 層重疊地形成在上述基底層的過程；和將上述後面基板與 上述前面基板在真空氣相中加熱以使上述金屬封合材層熔 融’以直接或間接地將上述後面基板和上述前面基板封合 在一起的過程。 在於上述本發明的影像顯示裝置及其製造方法中，上 述金屬封合材料是採用熔點低於3 5 0 °C以下的低熔點金 屬材料’例如：銥或含銥的合金。又，上述基底層是採用 胃於金屬封合材料具有良好的濕潤性及氣密性的材料也就 是親和性較高的材料爲佳，係可採用：至少包含銀、金、 鋁、鎳、鈷、銅中的至少一種的金屬膏；至少包含銀、金 '銘、鎳、鈷、銅中的至少一種的金屬鍍層或真空蒸鍍膜 :或者玻璃材料等。 經濟部皙慧时4笱8工消費合itfi印製 根據上述的構成方式的影像顯示裝置及其製造方法， 係藉由採用金屬封合材層將後面基板和前面基板直接或間 接地封合在一起，而能夠以對於設在後面基板上的電子放 出元件等不會造成熱傷害的低溫進行封合工作。而且，不 會產生如使用透明釉玻璃的情況下所發生的許多氣泡，因 此可提高真空外圍器的氣密性和封合強度。同時又因爲設 置了與金屬封合材層不同種類的基底層，當進行封合時即 使因金屬封合材料熔融而黏性降低的情況下，亦可藉由基 底層來防止金屬封合材料的流動，而將其保持在預定位置 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公董） -10- 484167 A7 B7 五、發明説明（8) (請先閱讀背面之注意事項再填寫本頁) 。因此，可比較容易處理，所以可獲得在真空氣相中能夠 很容易且確實地進行封合工作的影像顯示裝置及其製造方 法。 另外，本發明的影像顯示裝置之製造方法，係用來製 造具備：具有後面基板、和面對該後面基板配置的前面基 板的外圍器；以及設在該外圍器的內側的複數像素顯示元 件之影像顯示裝置之方法，其特徵爲： 該方法具備： 在上述後面基板與上述前面基板之間的封合面上，一 方面施加超音波一方面充塡熔融後的金屬封合材的過程； 和在充塡了上述金屬封合材之後，在真空氣相中對上述金 屬封合材加熱以使其熔融，利用上述封合面將上述後面基 板與上述前面基板予以直接或間接地封合在一起的過程。 經濟部皙慧財4¾¾工消費合itfi印設 又，本發明的其他的影像顯示裝置之製造方法，係用 來製造具備：具有後面基板、和面對該後面基板配置的前 面基板、和配設在上述前面基板的周緣部與上述後面基板 的周緣部之間’被封合在上述即面基板和後面基板上的側 壁之外圍器；以及設在該外圍器的內側的複數像素顯示元 件，上述前面基板與側壁之間的封合面、或上述後面基板 與側板之間的封合面的至少其中一方係利用金屬封合材層 而封合在一起的影像顯示裝置之製造方法，其特徵爲： 該方法係具備： 對於上述至少其中一方的封合面，一方面施加超音波 一方面充塡熔融後的金屬封合材的過程；和在充塡了上述 -11- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（9 ) 金屬封合材之後，在真空氣相中對上述金屬封合材加熱以 使其熔融’利用上述封合面將上述後面基板與前面基板以 及側壁予以封合在一起的過程。 此外’根據本發明的影像顯示裝置之製造方法，係包 含：充塡上述金屬封合材的過程；和一方面施加超音波一 方面沿著上述封合面連續地充塡熔融後的金屬封合材，以 形成沿著上述封合面延伸的金屬封合材層的過程。 此外’根據本發明的影像顯示裝置之製造方法，係具 備：在於上述封合面上形成與上述金屬封合材不同種類的 基底層的過程，先形成上述基底層之後，才在於該基底層 上充塡上述金屬封合材。 在與上述本發明相關的影像顯示裝置之製造方法中， 上述金屬封合材料是採用熔點低於3 5 0 °C以下的低熔點 金屬材料，例如：銥或含銥的合金。又，上述基底層是採 用對於金屬封合材料具有良好的濕潤性及氣密性的材料也 就是親和性較高的材料爲佳，係可採用：至少包含銀、金 、鋁、鎳、鈷、銅中的至少一種的金屬膏；至少包含銀、 金、鋁、鎳、鈷、銅中的至少一種的金屬鍍層或真空蒸鍍 膜；或者玻璃材料等。 根據上述的構成方式的影像顯示裝置之製造方法，係 藉由採用金屬封合材層將後面基板和前面基板直接或間接 地封合在一起，而能夠以對於設在後面基板上的電子放出 元件等不會造成熱傷害的低溫進行封合工作。而且，不會 產生如使用透明釉玻璃的情況下所發生的許多氣泡，因此 •12- (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） 484167 A7 B7_ 五、發明説明（8) (請先閲讀背面之注意事項再填寫本頁) 。因此，可比較容易處理，所以可獲得在真空氣相中能夠 很容易且確實地進行封合工作的影像顯示裝置及其製造方 法。 另外，本發明的影像顯示裝置之製造方法，係用來製 造具備：具有後面基板、和面對該後面基板配置的前面基 板的外圍器；以及設在該外圍器的內側的複數像素顯示元 件之影像顯示裝置之方法，其特徵爲： 該方法具備： 在上述後面基板與上述前面基板之間的封合面上，一 方面施加超音波一方面充塡熔融後的金屬封合材的過程； 和在充塡了上述金屬封合材之後，在真空氣相中對上述金 屬封合材加熱以使其熔融，利用上述封合面將上述後面基 板與上述前面基板予以直接或間接地封合在一起的過程。 經濟部智慧財447員工消#合汴吐印髮 又，本發明的其他的影像顯示裝置之製造方法，係用 來製造具備：具有後面基板、和面對該後面基板配置的前 面基板、和配設在上述前面基板的周緣部與上述後面基板 的周緣部之間，被封合在上述前面基板和後面基板上的側 壁之外圍器；以及設在該外圍器的內側的複數像素顯示元 件，上述前面基板與側壁之間的封合面、或上述後面基板 與側板之間的封合面的至少其中一方係利用金屬封合材層 而封合在一起的影像顯示裝置之製造方法，其特徵爲： 該方法係具備： 對於上述至少其中一方的封合面，一方面施加超音波 一方面充塡熔融後的金屬封合材的過程；和在充塡了上述 -11 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（9) (請先閱讀背面之注意事項再填寫本頁) 金屬封合材之後，在真空氣相中對上述金屬封合材加熱以 使其熔融，利用上述封合面將上述後面基板與前面基板以 及側壁予以封合在一起的過程。 此外’根據本發明的影像顯示裝置之製造方法，係包 a ·充塡上述金屬封合材的過程；和一*方面施加超音波一 方面沿著上述封合面連續地充塡熔融後的金屬封合材，以 形成沿著上述封合面延伸的金屬封合材層的過程。 此外’根據本發明的影像顯示裝置之製造方法，係具 備：在於上述封合面上形成與上述金屬封合材不同種類的 基底層的過程，先形成上述基底層之後，才在於該基底層 上充塡上述金屬封合材。 經齊邹曾慧时4·^5η工消費^汴吐-卬泛 在與上述本發明相關的影像顯示裝置之製造方法中， 上述金屬封合材料是採用熔點低於3 5 0 °C以下的低熔點 金屬材料’例如：銥或含銥的合金。又，上述基底層是採 用對於金屬封合材料具有良好的濕潤性及氣密性的材料也 就是親和性較高的材料爲佳，係可採用：至少包含銀、金 、鋁、鎳、鈷、銅中的至少一種的金屬膏；至少包含銀、 金、鋁、鎳、鈷、銅中的至少一種的金屬鍍層或真空蒸鍍 膜；或者玻璃材料等。 根據上述的構成方式的影像顯示裝置之製造方法，係 藉由採用金屬封合材層將後面基板和前面基板直接或間接 地封合在一起，而能夠以對於設在後面基板上的電子放出 元件等不會造成熱傷害的低溫進行封合工作。而且，不會 產生如使用透明釉玻璃的情況下所發生的許多氣泡，因此 •12- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 484167 A7 B7 五、發明説明（1〇) (請先閲讀背面之注意事項再填寫本頁) 可提高真空外圍器的氣密性和封合強度。再者，當對於封 合面進行充塡金屬封合材時，係藉由一方面施加超音波一 方面充塡金屬封合材，而可提高金屬封合材對於封合面的 濕潤性，即使採用銥等作爲金屬封合材的情況下，亦可將 金屬封合材良好地充塡到所期望的位置。因此可獲得在真 空氣相中能夠很容易且確實地進行封合工作的影像顯示裝 置及其製造方法。 此外，當沿著封合面連續地充塡熔融後的金屬封合材 時，係藉由一方面施加超音波一方面充塡熔融後的金屬封 合材，因此可沿著上述封合面形成無中斷地延伸的金屬封 合材層。 經濟部智慧財l^7a (工消費合作社印％ 在於封合面上形成與上述金屬封合材不同種類的基底 層之後，藉由在於這個基底層上充塡上述金屬封合材，當 進行封合時，即使將充塡後的金屬封合材予以加熱使其融 化的情況下，亦可利用基底層防止金屬封合材料的流動以 將其保持在預定位置。因此，處理上很容易，在於真空氣 相中可很容易且確實地進行封合工作。特別是藉由一方面 施加超音波一方面充塡金屬封合材’在於充塡完畢的時候 ，金屬封合材的一部份已經擴散到基底層內而形成合金屬 封合材層，所以當進行封合時’可更進一步地確實防止金 屬封合材的流動而將其保持在預定的位置。 此外，在充塡上述金屬封合材的過程中，係可利用上 述超音波的震盪輸出的大小或者上述金屬封合材的吐出孔 徑的大小之其中任何一種’來進行控制金屬封合材的吐出 -13- 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇x297公釐） 484167 A7 __B7 五、發明説明（H) 量。 另外’本發明的封合材充塡裝置，係在製造影像顯示 裝置時用來將金屬封合材充塡到封合面的封合材充塡裝置 ，係具備：用以定位支承具有上述封合面的受封合物的支 承台；和用以積存上述熔融後的金屬封合材的積存部；和 用以將從這個積存部所送來的熔融後的金屬封合材充塡到 上述封合面的噴嘴；和具有對於從上述噴嘴充塡到上述封 合面的熔融金屬封合材施加超音波的超音波產生部之充塡 頭；以及用以令上述充塡頭對上述封合面進行相對性的移 動之充塡頭移動機構。 此外，與這個發明相關的其他的影像顯示裝置，係具 備：具有後面基板、及配置於這個後面基板的對面，且利 用金屬封合材被直接或間接地封合到上述後面基板的前面 基板之外圍器；以及設在上述外圍器的內側之複數個像素 顯示元件，上述金屬封合材係被設在上述後面基板與上述 前面基板之間的封合面，形成遍佈這個封合面的全周長的 金屬封合材層，並且上述金屬封合材層係在於沿著上述封 合面的直線部延伸的部分中的至少一部份中，具有彎折部 或彎曲部。 又，與這個發明相關的其他的影像顯示裝置，係具備 :具有後面基板、及配置於這個後面基板的對面，且利用 金屬封合材被直接或間接地封合到上述後面基板的前面基 板之外圍器；以及設在上述外圍器的內側之複數個像素顯 示元件，上述金屬封合材係被設在上述後面基板與上述前 -14- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（12> 面基板之間的封合面’形成遍佈這個封合面的全周長的金 屬封合材層，並且上述金屬封合材層係在於沿著上述封合 面的直線部延伸的部分中的至少一部份中’具備形成有凹 凸的側緣。 另外，與這個發明相關的影像顯示裝置之製造方法’ 係用來製造具備：具有後面基板、及配置於這個後面基板 的對面，且利用金屬封合材被直接或間接地封合到上述後 面基板的前面基板之外圍器；以及設在上述外圍器的內側 之複數個像素顯示元件的影像顯示裝置之方法，係具備： 將金屬封合材充塡於上述後面基板與上述前面基板之 間的封合面，以形成遍佈在這個封合面的全周長延伸的金 屬封合材層的過程；和在充塡了上述金屬封合材之後’於 真空氣相中加熱上述金屬封合材以使其熔融，以利用上述 封合面將上述後面基板與上述前面基板予以直接或間接地 封合之過程；並且在充塡上述金屬封合材的過程中，係將 上述金屬封合材層內的沿著上述封合面的直線部延伸的部 分中的至少一部份形成彎折部或彎曲部。 又，與這個發明相關的其他的影像顯示裝置之製造方 法，係具備：將金屬封合材充塡於上述後面基板與上述前 面基板之間的封合面，以形成遍佈在這個封合面的全周長 延伸的金屬封合材層的過程；和在充塡了上述金屬封合材 之後，於真空氣相中加熱上述金屬封合材以使其熔融，以 利用上述封合面將上述後面基板與上述前面基板予以直接 或間接地封合之過程；並且在充塡上述金屬封合材的過程 -15- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（13) (請先閱讀背面之注意事項再填寫本頁) 中，係以將上述金屬封合材層內的沿著上述封合面的直線 部延伸的部分中的至少一部份形成具有凹凸的側緣的方式 來進行充塡上述金屬封合材。 在與上述本發明相關的影像顯示裝置其及製造方法中 ，上述金屬封合材料是採用熔點低於3 5 0 °C以下的低熔 點金屬材料，例如：銥或含銥的合金。 根據上述構成方式的影像顯示裝置及其製造方法，係 藉由採用金屬封合材層將後面基板和前面基板直接或間接 地封合在一起，而能夠以對於設在後面基板上的電子放出 元件等不會造成熱傷害的低溫進行封合工作。而且，不會 產生如使用透明釉玻璃的情況下所發生的許多氣泡，因此 可提高真空外圍器的氣密性和封合強度。 經濟部智慧財/i^M工消費合作社印製 此外，在上述金屬封合材層之內，沿著上述封合面的 直線部延伸的部分中的至少一部份係具有彎折部或彎曲部 。或者，在上述金屬封合材層之內，沿著上述封合面的直 線部延伸的部分中的至少一部份係形成具有凹凸的側緣。 因此，當進行封合時，即使金屬封合材熔化而黏性降低的 情況下，也可利用上述彎折部、彎曲部或側緣的凹凸來抑 制金屬封合材的流動，可將其保持在預定位置。因此金屬 封合材的處理可趨於容易，可獲得在真空氣相中能夠很容 易且確實地進行封合工作的影像顯示裝置及其製造方法。 【實施例之詳細說明】 以下’佐以圖面’詳細說明將本發明的影像顯示裝置 應用在F E D時的實施形態。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16 - 484167 A7 B7_ 五、發明説明（14) (請先閲讀背面之注意事項再填寫本頁) 如第1鼠和第2圖所示，這個F E D係具備有作爲絕 緣基板之由矩形狀的玻璃所成的前面基板1 1以及後面基 板1 2，這兩個基板係隔開1.5〜3.0 m m的間隙，相對面 地配置。並且前面基板1 1以及後面基板1 2係隔介著矩 形框狀的側壁1 8而讓彼此的周緣部互相接合在一起，而 構成一個內部維持真空狀態的扁平的矩形狀的真空外圍器 10° 在於真空外圍器1 0的內部，爲了支承加諸在後面基 板1 2以及前面基板1 1的大氣壓力的荷重，係設置有複 數個支承構件1 4。這些支承構件1 4係朝向與真空外圍 器1 0的長邊平行的方向延伸，並且沿著與短邊平行的方 向隔開預定的間隔分開配置著。至於支承構件1 4的形狀 並無須特別地限定，亦可採用柱狀的支承構件。 1泉 Γ ,币?^1呀41*7,411^:^-?-^4^土卩 4 如第3圖所示，在前面基板1 1的內面係形成著螢光 幕16。這個螢光幕16係由：會呈紅、綠、藍的三色發 光的螢光體層R、G、B以及矩陣狀的黑色吸光部2 0所 形成的。上述的支承構件1 4係被配置成隱藏在黑色吸光 部的影子內。 此外，在於螢光幕1 6上係形成著由A 1膜等的等電 性薄膜所成的金屬背層1 7。金屬背層1 7係可將在螢光 幕1 6所發出的光線中之朝向作爲電子源的後面基板1 2 的方向前進的光線予以反射以提高亮度。又，金屬背層 1 7係可藉由賦予前面基板1 1的影像顯示領域導電性而 可防止電荷累積，進而對於後述的後面基板1 2側的電子 -17- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（d (請先閲讀背面之注意事項再填寫本頁) 放出源發揮陽極電極的作用。此外，具有能夠防止因真空 外圍器1 〇內所殘留的氣體受到電子線作用而發生電離所 產生的離子，導致螢光幕1 6受損的功能。 如第2圖所示，在於後面基板1 2的內面上，係設有 許多個電場放出型的電子放出元件2 2，可作爲激勵螢光 體層R、G、B的電子放出源來分別放出電子束。這些電 子放出元件2 2係對應於每一個像素而被排列成複數列以 及複數行，係具有作爲這個發明中的像素顯示元件的功會g 〇 更詳細地說，在後面基板1 2的內面上，係形成有導 電性陰極層2 4，在這個導電性陰極層2 4上係形成具有 許多孔穴2 5的二氧化矽膜2 6。在二氧化矽膜2 6上， 形成由鉬、鈮等所構成的閘極電極2 8。並且在後面基板 1 2的內面上，在於各孔穴2 5內，係設置有由鉬等所構 成的尖錐狀的電子放出元件2 2。此外，在於後面基板 1 2上，係形成著與電子放出元件2 2相連接的未圖示的 矩陣狀的配線等。 經濟部tl耐4¾¾工消費合汴灶印災 在於上述的構成方式的F E D中，映像訊號係被輸入 到被形成單純矩陣方式的電子放出元件2 2和閘極電極 2 8。以電子放出元件2 2爲基準的情況下，當最高亮度 狀態的時候，係被施加+ 100 V的閘極電壓。此外，螢光 幕1 6則被施加+ 10 k V的電壓。而從電子放出元件2 2 所放出的電子束的大小係因閘極電壓2 8的電壓大小而受 到調變，這個電子束將會激勵螢光幕1 6的螢光體層R、 -18- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 ________£7____ 五、發明説明（^ G、B令其發光而顯示出影像。 是以，因爲螢光幕1 6被施加了高電壓’所以前面基 板1 1、後面基板1 2、側壁1 8以及支承構件1 4用的 板玻璃，係使用高熔點玻璃。此外，如後面所詳細說明般 地，後面基板1 2與側壁1 8之間係利用透明釉玻璃等的 低熔點玻璃3 0來進行封合，在前面基板1 1與側壁1 8 之間係利用已經先被形成在封合面上的低熔點金屬材料層 例如：銥（I η )層3 2來進行封合。 其次，詳細說明上述的構成方式的F E D的製造方法 首先，在於作爲前面基板1 1的玻璃板上形成螢光幕 1 6。這是先備好與前面基板1 1相同大小的玻璃板，然 後在於這個玻璃板利用繪圖機來形成螢光體層的圖案。再 將這個已經被形成了螢光體層圖案的玻璃板與前面基板用 的玻璃板一起放置在定位夾具，然後安置於曝光台進行曝 光、顯影之後，就做成螢光幕1 6。 經 濟 邹 慧 时 4 fl 卬 % 其次，在於用這種方式所形成的螢光幕1 6上，利用 蒸鍍法、濺鍍法等來形成厚度小於2500nm以下的鋁膜，以 作爲金屬背層1 7。 接下來，在於由玻璃板、陶瓷等的絕緣基板所成的後 面基板1 2上形成電子放出元件2 2。這個時候，係在於 玻璃板上形成矩陣狀的導電性陰極層，再於這個導電性陰 極層上，利用例如：熱氧化法、化學蒸鍍法、或者濺鍍法 來形成二氧化矽膜的絕緣膜。 -19- (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7_ 五、發明説明（1?) 然後’再於這個絕緣膜上，利用例如：濺鍍法、電子 束蒸鍍法來形成鉬、鈮等的形成閘極電極用的金屬膜。其 次’在於這個金屬膜上，利用印刷方式形成與將要形成的 閘極電極相對應的形狀的防鈾劑圖案。再以這個防蝕劑圖 案作爲掩罩’將金屬膜利用濕式蝕刻法或乾式鈾刻法來予 以進行蝕刻，以形成閘極電極2 8。 其次，以防蝕劑圖案以及閘極電極作爲掩罩，利用濕 式蝕刻法或乾式蝕刻法來對於絕緣膜進行蝕刻，以形成孔 穴2 5。然後，除去防蝕劑圖案之後，藉由對於後面基板 表面從傾斜了預定角度後的方向來進行電子束蒸鍍，以在 於閘極電極2 8上形成由例如：鋁、鎳、鈷所成的剝離層 。然後，對於後面基板表面從垂直方向，例如：以鉬作爲 形成陰極用的材料，利用電子束蒸鍍法來進行蒸鍍。如此 一來，就可在於各孔穴2 5的內部形成電子放出元件2 2 。接下來，利用上升淸除法將剝離層以及形成於其上面的 金屬膜一起除去。 然後，將已經被形成了電子放出元件2 2之後的後面 基板1 2的周緣部與矩形框狀的側壁1 8之間，在大氣氣 相環境中，利用低熔點玻璃3 0予以互相封合。同時，在 於大氣氣相環境中，將複數個支承構件1 4利用低熔點玻 璃3 0予以封合於後面基板1 2上。 也就是，先將有機溶劑與透明釉玻璃混合，再將已經 利用硝基纖維素等的膠合劑調整過粘度之後的膏狀的透明 釉玻璃材料塗敷於後面基板1 2以及側壁1 8的封合面的 -20- (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（18) 其中一方。接下來，將已經被塗敷了透明釉玻璃3 0後的 後面基板1 2以及側壁1 8的接合部互相抵接之後，將這 些一起放入電爐內，進行加熱直到超過透明釉玻璃3 0的 熔點以上的溫度以進行封合。並且將以這種方式把後面基 板1 2與側壁1 8封合在一起的東西稱爲“後面基板-側 壁組合體”。 接下來，將後面基板1 2與前面基板1 1隔介著側壁 1 8予以互相封合在一起。此時，係如第4圖所示般地， 首先係在於封合面也就是側壁1 8的上表面或前面基板 1 1的外表面周緣部上的至少其中一方，例如：在前面基 板1 1的外周緣部上，塗敷上作爲金屬封合材料的銥，以 形成分別延伸遍佈於基底層的整個周圍的銥層3 2。銥層 3 2的寬度係被形成6mm的程度。 又，至於金屬封合材料係以採用熔點小於約3 5 0 °C以 下，具有優異密合性、接合性的低熔點金屬材料爲宜。本 實施形態所採用的銥（I η )的特徵爲··不僅是熔點很低 ，只有156.7 °C而已，而且蒸氣壓很低，質軟耐衝擊，具有 即使處於低溫也不會脆化等的優點。而且，亦可依條件之 不同而直接接合於玻璃，所以係非常適於本發明之目的的 材料。 此外’關於低熔點金屬材料，不僅是銥的單體，亦可 單獨使用氧化銀、銀、金、銅、鋁、鋅、錫等的元素或者 使用添加了上述元素的複合合金。例如：銥97 % —銀3 % 的共晶合金’其熔點更低，只有141 °C，而且又可提高機 -21 _ (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公董） 484167 A7 B7 五、發明説明（^ 械強度。 (請先閱讀背面之注意事項再填寫本頁) 此外，在於上述說明中，雖然是採用了所謂的「熔點 」的表現方式’但是如果是由兩種以上的金屬所成的合金 的話’有時候其熔點並非固定於單一溫度。一般而言，在 於這種情況下，是以“液相線溫度”和“固相線溫度，’來 定義。前者係指：從液體的狀態，將溫度下降時，合金的 一部分開始進行硬化的溫度；後者係指：合金全部都變硬 化時的溫度。在於本實施形態，爲了方便於說明起見，即 使針對於這種情況，也是採用“熔點”的表現方式，將“ 固相線溫度”也稱爲“熔點”。 其次，在於封合面被形成了銥層3 2的前面基板1 1 、與在於後面基板1 2上封合著側壁1 8而成的後面基板 -側壁組合體係如第5圖所示般地，以封合面彼此之間互 相面對的狀態，且以隔著預定的距離互相面對的狀態下， 受到後述的夾具所保持著，並且被投入到真空處理裝置。 如第6圖所示，這個真空處理裝置1〇〇係具有：依 序設置的載裝室1 0 1 ;烘焙·電子線洗淨室1 〇 2 :冷 卻室1 0 3 ;除氣劑膜蒸鍍室1 0 4 ;組裝室1 0 5 ;冷 卻室1 0 6以及卸載室1 0 7。這些各室是被製作成可進 行真空處理的處理室，當進行製造F E D的時候，所有處 理室都執行真空排氣。而且，互相相鄰的處理室之間，係 利用閘閥等連接在一起。 隔著預定的間隔相對向的後面基板-側壁組合體以及 前面基板1 1被投入載裝室1 0 1 ，將載裝室1 0 1內抽 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） 484167 A7 B7 __ 五、發明説明（2() (請先閱讀背面之注意事項再填寫本I) 氣變成真空氣相之後，再送到烘焙•電子線洗淨室1 〇 2 。當烘焙·電子線洗淨室1 0 2內變成1 0 — 5 P a程度的 高真空度的時點，就將後面基板-側壁組合體以及前面基 板1 1的溫度加熱到300 °C程度，進行烘焙，使得各構件 的表面所吸附的氣體充分地釋放出來。在這種溫度下，銥 層（熔點約1 5 6 °C ) 3 2將會熔融。 此外，在烘焙·電子線洗淨室1 0 2內進行加熱的同 時，係從被安裝在烘焙•電子線洗淨室1 0 2內的未圖示 的電子線產生裝置將電子線照射到前面基板1 1的螢光幕 面以及後面基板1 2的電子放出元件面。這個電子線係受 到安裝在電子線產生裝置外部的偏向裝置的偏向掃描，所 以可對於螢光幕面以及電子放出元件面進行全面的電子線 洗淨工作。 經濟部智慧財產笱員工消費合作fi印製 進行完加熱、電子線洗淨後，後面基板-側壁組合體 以及前面基板1 1再送往冷卻室1 〇 3，被冷卻到例如大 約100 °C的溫度。接下來，後面基板-側壁組合體以及前 面基板1 1被送往除氣劑膜的蒸鍍室1 〇 4，在此處，將 B a膜蒸鍍形成在螢光幕的外側以當作除氣劑。這個B a 膜係可防止表面受到氧、碳等的污染，而可維持活性狀態 。至於除氣劑膜的形成方法則可在於50〜1 50 °C的溫度下 ，利用一般的蒸鍍法來進行。 接下來，將已經呈對向配置的後面基板-側壁組合體 以及前面基板1 1送往組裝室10 5，在此處，將兩者藉 由銥層3 2互相封合在一起。也就是，如第7圖所示般地 本紙張尺度適用中國國家標準(CNS ) A4規格（210X297公| ~ 經濟部智慧財4%a (工消費合itfi印製 484167 A7 B7 五、發明説明（21) ，在於被作爲真空槽的組裝室1 0 5內配置著內藏有第一 加熱器1 1 0 a的前面基板失設置台1 1 〇，在其上方則 是呈相對向地配置著內藏有第二加熱器1 1 2 a的後面基 板固定夾具1 1 2。並且，後面基板-側壁組合體以及前 面基板1 1分別被支承於後面基板固定夾具1 1 2以及前 面基板失設置台1 1 0，呈互相相向。 然後的封合過程，係先將組裝室1 〇 5內，一方面排 氣減壓直到10—5Pa的真空度（氣壓），一方面利用加 熱器1 1 0 a、1 1 2 a ’至少將接合部加熱至350 t：以 下的溫度，最好是加熱至6 0 °C〜3 0 0 °C的溫度範圍內來進 行的。 也就是說，當組裝室1 0 5變成1 〇— 5P a以下的真 空度的時點，利用第一加熱器1 1 〇 a將前面基板1 1加 熱至200 °C的程度，而將銥層32熔融或軟化成液狀。在這 種狀態下，將被固定在後面基板固定夾具i i 2上的後面 基板-側壁組合體利用上下方向驅動部1 1 4使其下降， 而使得側壁1 8的封合面抵接到前面基板1 1上的銥層 3 2。然後，維持這種狀態，在組裝室1 〇 5內，將銥層 3 2緩慢冷卻直到溫度降到例如50 t以下，而使其硬化。 如此一來，側壁1 8與前面基板1 1就受到銥層3 2所封合， 而形成真空外圍器1 0。 以這種方式所形成的真空外圍器1 〇，在於冷卻室 1 0 6內被冷卻到常溫之後，再從卸載室1 q 7取出到大 氣中。藉由以上的製程，即可完成F ED。 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^-- I #1— (請先閱讀背面之注意事項再填寫本頁) 訂 484167 A7 __B7 五、發明説明（ (請先閲讀背面之注意事項再填寫本頁) 根據以上的結構的F E D及其製造方法，係藉由在於 真空環境中，進行將前面基板1 1與後面基板1 2封合的 工作，可利用烘焙以及電子線洗淨的雙重作用而使得基板 表面吸附氣體充分地釋放出來，除氣劑膜也不受到氧化， 可充分獲得充分的吸氣效果。藉此，可獲得能夠維持較高 真空度且經過長時間亦都可發揮良好的發光特性的F E D 。此外，可省略傳統的方法所需的關於排氣所用的結構（ 排氣用的細管等），因此能夠有效率地製造具有良好的顯 示特性的薄型F E D。 至於封合材料，則是因爲使用銥，而可抑制封合時的 發泡，所以可製得氣密性及封合強度高的F E D。因此， 即使是50英吋以上的大型的影像顯示裝置，亦可很容易且 確實地進行封合工作。 此外，在上述的實施形態中，雖然是製作成：僅在於 前面基板1 1的封合面與.側壁1 8的封合面的其中一方的 封合面上形成了銥層3 2的狀態下進行封合的構造’但是 ，亦可製作成：在於前面基板11的封合面與側壁18的 經濟部智慧財4(工消費合itfl印製 封合面的.兩者都形成了銥層3 2的狀態下進行封合的構造 〇 此外，亦可將被設置在前面基板1 1的封合面或側壁 1 8的封合面的至少其中一方的封合面上的銥層在於真空 處理裝置的外面，預先加熱至熔點以上的溫度’然後再配 置該呈熔融狀態的銥層。這種情況下’可藉由施加超音波 來強化銥層與封合面之間的接合力量。 -25- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（ 再者，銥或者銥合金之類的低熔點金屬封合材料，即 使處在非熔融狀態時也很軟（硬度很低），所以亦可藉由 將接合部的加熱溫度設定在低於熔點約60 °C〜200 t的溫 度，再將後面基板-側壁組合體的側壁1 8按壓在銥層 3 2上，而將側壁1 8與前面基板1 1封合在一起。 此外，在進行封合過程中，也可以採用：將後面基板 -側壁組合體配置於下方，並且在其上方將前面基板1 1 配置成封合面在下，利用上下方向驅動部將前面基板往下 降，而將側壁與前面基板封合在一起的結構。此外，也可 以採用：將前面基板或後面基板的其中一方的周緣部加以 彎折，而不隔介著側壁，直接將這兩個基板封合在一起的 結構。 亦可如第8圖所示般地，在於前面基板1 1的封合面 的整個外圍都形成溝1 9 ，並且在這個溝1 9內配置作爲 低熔點金屬材料的銥層3 _ 2。溝1 9的斷面形狀亦可形成 角形、圓形、半圓形或圓弧形。至於其他部分的結構以及 封合方法則是與上述的第一實施例相同。 根據這種結構，當進行封合時，熔融或軟化後的銥 3 2將會滯留在前面基板1 1的溝1 9內，而被保持在預 定的位置不會從溝1 9流出到外面。因此，銥的處置方面 可更趨於簡單，即使是對於50英吋以上的大型的影像顯示 裝置也可以容易且確實地進行封合工作。 其次，說明本發明的第2實施例的F E D及其製造方 法。此外，針對於與上述的第1實施例相同的部分都標示 -26- (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 484167 A7 _ B7___ 五、發明説明（j 相同的圖號，並省略其詳細的說明。 (請先閱讀背面之注意事項再填寫本頁) 如第9圖所示，根據第2實施例，在於構成真空外圍 器1 0的後面基板1 2與側壁1 8之間，係利用透明釉玻 璃等的低熔點玻璃3 0封合在一起。而且前面基板1 1與 側壁1 8之間，係利用由形成在封合面上的基底層3 1以 及被形成在這個基底層上的銥層3 2所融合成的封合層 3 3而封合在一起。至於F E D的其他的結構則是與第1 實施例相同。 首先，利用與第丨實施例相同的方法，先準備好：已 經被形成了螢光幕1 6以及金屬背層1 7的前面基板1 1 ;和被設置了電子放出元件2 2的後面基板1 2 ;和側壁 1 8。接下來，在大氣中，利用低熔點玻璃3 0將已經被 形成了電子放出元件2 2的後面基板1 2的周緣部與矩形 框狀的側壁1 8之間予以互相封合在一起。同時，在大氣 中，利用低熔點玻璃3 0將複數個支承構件1 4封合在後 面基板1 2上。 經濟部智慧时4^a(工消費合作社印製 然後，隔介著側壁1 8將後面基板1 2與前面基板 1 1互相封合在一起。這種情況係如第1 〇圖A以及第 1 0圖B所示般地，先在於即將成爲封合面的側壁1 8的 上表面、以及前面基板1 1的內面周緣部上，分別地在整 個周圍上形成預定寬度的基底層3 1。在本實施例中，係 塗敷銀膏來形成基底層3 1。 接下來，在各基底層3 1上，塗敷低熔點金屬封合材 料的銥，以分別形成連貫在整個基底層周圍的銥層3 2。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -27- 484167 A7 B7 五、發明説明（^ (請先閱讀背面之注意事項再填寫本頁) 這個銥層3 2的寬度係形成較之基底層3 1的寬度更窄， 係塗敷成使得銥層的兩側緣與基底層3 1的兩側緣分別隔 開預定的間隙的狀態。例如：若將側壁1 8的寬度設定爲 9mm的情況下，基底層3 1的寬度就形成爲7mm，銥層 3 2的寬度就形成爲6mm的程度。 此外，至於低熔點金屬封合材料亦可不採用銥（In)的單 體，而採用單獨添加或者複合添加了氧化銀、銀、金、銅 、鋁、鋅、錫等的元素之合金。例如：採用含In97 % —含 Ag3 %的共晶合金的話，熔點可更降低141 °C，而且可提高 機械強度。 此外’基底層3 1係採用對於金屬封合材料具有良好 的濕潤性及氣密性的材料，也就是，對於金屬封合材料的 親和性較高的材料。除了上述的銀膏之外，亦可採用：金 、鋁、鎳、鈷、銅等的金屬軟膏。除了金屬軟膏之外，基 底層3 1亦可採用：銀、金、錦、鎳、銘、銅等的金屬電 鍍層或蒸鍍層、或者玻璃材料層。 經濟部智慧財4¾¾工消費合作社印製 在此處’對於被形成在封合面上的基底層3 1的充塡 銥的工作’也就是說，銥的塗敷工作係使用後述的封合材 充塡裝置來執行的。 如第1 1圖所示，這個封合材充塡裝置係具備一個具 有平坦的載置面4 0 a的支承台4 0，在載置面上，設置 有··呈平坦的矩形板狀的加熱板4 2 ;用來將被封合物定 位在加熱板上的定位機構4 4 ;用來將封合材充塡到被封 合物上的充塡頭4 6 ;以及可令充塡頭相對於被封合物進 -28- 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公董） 484167 A7 B7 五、發明説明（ 行相對移動的充塡頭移動機構4 8。 (請先閲讀背面之注意事項再填寫本頁) 在於加熱板4 2上係載置著：作爲被封合物，而被封 合了前述的側壁1 8的後面基板1 2或前面基板1 1。並 且’這個加熱板4 2也兼具有作爲將載置於這個加熱板 4 2上面的被封合物予以加熱的加熱手段的功能。 定位機構4 4係具備了 ：例如可分別抵接在被載置於 加熱板4 2上的前面基板1 1的互相垂直相交的兩個邊的 三個固定的定位爪5 0 ;以及可分別抵接於前面基板1 1 的其他的兩個邊，且朝向定位爪5 0彈性地推迫前面基板 1 1的兩個推爪5 2。 如第11圖與第12圖所示，充塡頭46係具備：儲 留著已經熔融的銥的儲留部5 4 ;將來自這個儲留部的熔 融銥充塡到前面基板1 1的封合面的噴嘴5 5 ;以及被固 定在這個噴嘴5 5的外表面之當成超音波產生部來發揮功 能的超音波振動子5 6。_此外，充塡頭4 6係連接著用來 供給淸潔用氣體的供給管5 8，並且設有可加熱該噴嘴 55的加熱部60。 經濟部智慧財4Φ,Μ工消費合itfi印製 充塡頭移動機構4 8係如第1 1圖所示般地’具備有 :可將充塡頭4 6支承成可沿著對支承台4 0的載置面 4 0 a垂直的Z軸方向，也就是，對於被載置在加熱板 4 2上的前面基板1 1成垂直的2軸方向，自由地進行升 降驅動的Z軸驅動機器人6 2 ;以及可將這個Z軸驅動機 器人6 2支承成可沿著與上述前面基板1 1的短邊呈平行 的Y軸方向，自由地進行往復驅動的γ軸驅動機器人6 4 -29· 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7_ 五、發明説明（2?) (請先閲讀背面之注意事項再填寫本頁) 。此外，Y軸驅動機器人6 4又利用被固定在載置面 4 0 a上的X軸驅動機器人6 4以及輔助軌道6 7，而被 支承成可沿著與上述前面基板11的長邊呈平行的X軸方 向，自由地進行往復驅動。 當採用上述封合材充塡裝置來塗敷銥的時候，係如第 1 1圖所示般地，將封合面朝上，並將前面基板1 1載置 於加熱板4 2上，利用定位機構4 4予以定位在預定的位 置。接下來，如第1 2圖所示般地，將已經儲留著熔融狀 態的銥的充塡頭4 6設定在所期的充塡開始位置之後，利 用充塡頭移動機構4 8沿著前面基板1 1的封合面，此處 係指被形成在前面基板1 1上的基底層3 1 ，以預定的速 度來移動充塡頭46。並且，一面移動充塡頭46，一面 從噴嘴5 5將熔融銥連續地充塡到基底層3 1上，以在於 基底層3 1的整個周圍形成連續延伸的銥層3 2。此外， 在這個時候係同時令超音.波振動子5 6作動，以一面對於 熔融銥施加超音波一面充塡到基底層3 1上。 經濟部智慧財4¾員工消費合作社印製 此處，上述的超音波係施加到前面基板1 1的封合面 ，也就是，對於基底層3 1表面垂直的方向，而超音波的 振動數係設定成例如：30〜40KHz。 藉由以這種方式，一面施加超音波，一面充塡銥，可 以提高銥對於封合面或基底層3 1的濕潤性，可將銥良好 地充塡到所期望的位置。而且，可將熔融的銥沿著基底層 3 1連續地充塡，而能夠形成沿著基底層3 1不具有分段 缺口的連貫延伸的銥層。此外，藉由一面施加超音波一面 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -30- 484167 A7 B7 五、發明説明（^ 進行充塡熔融的銥，在於剛剛充塡完畢的時點，一部份的 銥將會擴散到基底層3 1的表面內部而形成合金層。 (請先閱讀背面之注意事項再填寫本頁) 此外，在進行充塡銥的過程中，可藉由調整上述超音 波的振動輸出的大小，或噴嘴5 5的吐出銥的孔徑的大小 之其中一方，而得以控制銥的吐出量，進而可調整所形成 的銥層的厚度、寬度等。 另外，針對於被封合在後面基板1 2的側壁1 8的封 合面上，此處係在於基底層3 1上進行充塡銥的情況，係 與上述情況同樣地，先將後面基板1 2定位在封合材充塡 裝置的加熱板4 2上，再利用充塡頭4 6 —面施加超音波 ，一面沿著基底層3 1連續地充塡熔融的銥，以沿著這個 基底層3 1連續地形成延續的銥層3 2。 其次，如第1 3圖所示般地，將在於封合面已經形成 了基底層3 1及銥層3 2的前面基板1 1 ;與在於後面基 經濟部智慧財1笱肖工消費合itri印製 板1 2上已經被封合著側壁1 8並且在這個側壁1 8上表 面已經被形成了基底層3 1和銥層3 2的後面基板-側壁 組合體，令兩者的封合面彼此相向的狀態下，利用夾具將 兩者隔著預定的距離保持在互相相向的狀態，然後移入前 述的真空處理裝置1 0 0。 然後，與第1實施例同樣地，在於真空處理裝置 1 0 0的烘焙•電子線洗淨室1 0 2內，當真空度抵達 1 0 — 5P a程度的高真空度時，就將前面基板1 1與後面 基板-側壁組合體加熱到約300 t的溫度，進行烘焙，以 使得各構件的表面所吸附的氣體充分地釋放出來。 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 31 - 484167 A7 B7 五、發明説明（ 在這種溫度下，銥層（熔點約156 °C ) 3 2將會融化 (請先閱讀背面之注意事項再填寫本頁) 。但是，因爲銥層3 2是被形成在親和性較高的基底層 3 1上面，所以銥並不會流動而一直保持在基底層3 1上 面，可防止其流出到電子放出元件2 2側、或後面基板 1 2外側、或螢光幕1 6側。 進行完畢加熱、電子線洗淨之後，將後面基板-側壁 組合體以及前面基板1 1在冷卻室1 0 3內冷卻，直到溫 度降至例如約100 °C爲止。接下來，在蒸鍍室1 0 4內， 將作爲除氣劑膜用途的B a膜蒸鍍形成於螢光幕1 6的外 側。 其次，後面基板-側壁組合體以及前面基板1 1再被 送到組裝室1 0 5，在此處進行加熱至200 °C，使得銥層 3 2再度熔融成液狀或軟化。在這種狀態下，將前面基板 1 1與側壁1 8接合，並且以預定壓力進行加壓之後，再 令銥慢慢地冷卻硬化。藉.此，前面基板1 1與側壁1 8可 利用融合銥層3 2與基底層3 1而成的封合層3 2而被封 合成一體，而形成真空外圍器1 0。 經濟部智慧財4笱資工消費合作fi印說 以這種方式所形成的真空外圍器1 0，在於冷卻室 1 0 6內被冷卻至常溫之後，再從卸載室1 0 7取出。經 由以上的製程，就可完成F ED。 根據以上的結構的F E D及其製造方法，因爲是在於 真空氣相環境中進行前面基板11與後面基板12的封合 工作，可藉由倂用烘焙及電子線洗淨而令基板的表面所吸 附的氣體充分地釋放出來，而且除氣劑膜也不受到氧化， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） -32- 484167 A7 B7 五、發明説明（3() 可獲得充分的吸氣效果。如此一來，可製得能夠維持高真 空度的F E D。 此外，藉由使用銥作爲封合材料，可抑制封合時的起 泡，而可獲得高氣密性及高封合強度的F E D。同時，可 藉由在銥層3 2的下方設置基底層3 1 ，當在進行封合過 程中，即使銥層3 2熔融的時候，亦可防止銥的流出，而 將其保持在預定的位置。因此，銥的處置上更趨簡單，即 使針對於50英吋以上的大型影像顯示裝置，亦可容易且確 實地進行封合工作。 此外，藉由一面施加超音波一面充塡銥，可提高銥對 於封合面或基底層3 1的濕潤性，即使以銥作爲金屬封合 材的情況下，也可以將銥良好地充塡於所期望的位置。此 外，可以沿著基底層3 1將熔融的銥做連續的充塡，所以 可形成沿著基底層3 1沒有中斷的銥層3 2。此外，如本 實施形態所示的方式使用基底層3 1的情況下，係一面施 加超音波一面進行充塡熔融銥，所以當充塡完畢的時候， 一部份的銥將會擴散到基底層3 1的表面部內，以形成合 金層。因此，當進行封合時，即使銥融化的時候，可更確 實地防止銥的流動，可將其保持在預定的位置。 由以上的說明可知，金屬封合材的處置上可更趨於容 易，而可獲得在真空氣相環境中可容易且確實地進行封合 工作的影像顯示裝置之製造方法。 此外，在上述第2實施例中，雖然是採用··在於前面 基板1 1的封合面與側壁1 8的封合面的雙方都形成了基 -33- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董） 484167 A7 B7 五、發明説明（31) 底層3 1及銥層3 2的狀態下來進行封合的結構，但是， 也可以採用：只在其中任何一方的封合面，例如第1 4圖 所示般地，只在於前面基板1 1的封合面形成了基底層 3 1及銥層3 2的狀態下來進行封合的結構。 此外，即使在於如前述第1實施例所示般地，不使用 基底層而直接在於基板或側壁的封合面上進行充塡銥層的 情況下，亦可使用上述的封合材充塡裝置，來一面施加超 音波一面進行充塡銥。藉此，可提高銥對於封合面的潤濕 性，而可將銥連續地充塡到所期望的位置。 此外，在第2實施例中，亦可將後面基板1 2與側壁 1 8之間，利用與前述相同的融合著基底層3 1和銥層 3 2後的封合層3 3來進行封合。或者，也可以採用：將 前面基板或後面基板的其中一方的周緣部加以彎折，而不 隔介著側壁，直接將這兩個基板封合在一起的結構。此外 ，雖然是將銥層3 2的寬度在於整個周圍都形成比基底層 3 1的寬度更窄的寬度，但是’只要在基底層3 1的至少 一部份上，將銥層3 2的寬度設定成小於基底層的寬度的 話，就可以防止銥的流動。 其次，說明本發明的第3實施例的F E D及其製造方 法。此外，針對於與上述的第1實施例相同的部分都標示 相同的圖號，並省略其詳細的說明。 首先，利用與第1實施例相同的方法，預先準備好： 已經被形成了螢光幕1 6及金屬背層1 7的前面基板1 1 :和被設置了電子放出元件2 2的後面基板1 2 ;以及側 -34- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（g (請先閲讀背面之注意事項再填寫本頁) 壁1 8 °接下來，將已經形成了電子放出元件2 2的後面 基板1 2的周緣部與矩形框狀的側壁1 8之間，在於大氣 氣相環境中，利用低熔點玻璃3 〇予以互相封合。同時， 在於大氣氣相環境中，利用低熔點玻璃3 〇在後面基板 1 2上封合著複數個支承構件1 4。 然後’將後面基板1 2與前面基板1 1隔介著側壁 1 8予以互相封合在一起。這種情況，係如第1 6圖A、 第1 6圖B以及第1 7圖所示般地，先在即將作爲前面基 板1 1側的封合面1 1 a ，也就是前面基板1 1的內面周 緣部’沿著其整個周圍，形成基底層31。這個封合面 1 1 a係做成與即將成爲後面基板1 2側的封合面1 8 a 也就是側壁1 8的上表面對應的矩形框狀，係沿著前面基 板1 1的內面的周緣部連貫延伸著。並且，封合面1 1 a 係具有呈相向的兩組直線部以及4個角部，而且係形成與 側壁1 8的上表面幾乎相同大小以及寬度。 經濟部智慧財4^7a:工消費合作社印災 此外，基底層3 1的寬度係形成較之封合面1 1 a的 寬度稍微小一點。在本實施例中，係塗敷銀膏以形成基底 層3 1。 接下來，在基底層3 1上，塗敷銥當作金屬封合材料 ，以在於基底層31的整個周圍形成連續毫無缺口的銥層 3 2。此時，銥層3 2之中，沿著封合面1 1 a的各直線 部延伸的部分係形成：以預定的間距來將具有許多銳角彎 折部3 2 a的補強支柱結構狀的圖案連續排列而成的形狀 。此外，銥層3 2係形成大致上一定的寬度，其結果就變 本紙浪尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 ____B7 _ 五、發明説明（ 成在銥層3 2的兩側緣也具有許多彎折部的狀態。此外， 銥層3 2係塗敷在基底層3 1的寬度內。 (請先閱讀背面之注意事項再填寫本頁) 金屬封合材料以及基底層係可採用與前述的實施例相 同的材料。 接下來，如第1 8圖所示般地，將已經在封合面 1 1 a上形成了基底層3 1及銥層3 2的前面基板1 1 ; 與已經在後面基板1 2封合著側壁1 8的後面基板-側壁 組合體，在於令封合面1 1 a、1 8 a互相相向的狀態， 而且是利用夾具等予以保持成隔開預定的距離的相向狀態 下，移入到前述的真空外圍器1 0。 然後，與第1實施例同樣地，在於真空處理裝置 1 0 0的烘焙•電子線洗淨室1 0 2內，當真空度抵達 10—5P a程度的高真空度時，就將前面基板11與後面 基板-側壁組合體加熱到約300 °C的溫度，進行烘焙，以 使得各構件的表面所吸附的氣體充分地釋放出來。 經濟部智慧財產tips工消費合作fi印災 在這種溫度下，銥層（熔點約156 °C ) 3 2將會融化 。但是，此處的銥層3 2是被形成具有許多彎折部3 2 a 的圖案，即使融化的時候亦可抑制銥的流動。同時，銥層 3 2是被形成在高親和性的基底層3 1上，所以熔融的銥 並不會流動而一直保持在基底層3 1上面，可防止其流出 到電子放出元件2 2側、或後面基板1 2外側、或螢光幕 1 6側。 進行完畢加熱、電子線洗淨之後，將後面基板一側壁 組合體以及前面基板1 1在冷卻室1 〇 3內冷卻’直到溫 -36- 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） 484167 A7 ___B7____ 五、發明説明（ (請先閱讀背面之注意事項再填寫本頁) 度降至例如約100 °C爲止。接下來，在蒸鍍室1 〇 4內 將作爲除氣劑膜用途的B a膜蒸鍍形成於螢光幕1 6的外 側。 其次，後面基板-側壁組合體以及前面基板1 1再被 送到組裝室1 0 5，在此處進行加熱至200 °C，使得銥層 3 2再度熔融成液狀或軟化。此處，也是與前述同樣地’ 銥層3 2是被形成具有許多彎折部3 2 a的圖案，並且被 形成在高親和性的基底層3 1上，所以熔融的銥並不會流 動而一直保持在基底層3 1上面。在這種狀態下，將前面 基板1 1與側壁1 8接合，並且以預定壓力進行加壓之後 ，再令銥慢慢地冷卻硬化。藉此，前面基板1 1與側壁 1 8可利用融合銥層3 2與基底層3 1而成的封合層3 2 而被封合成一體，而形成真空外圍器1 0。 以這種方式所形成的真空外圍器1 0，在於冷卻室 1 0 6內被冷卻至常溫之崔，再從卸載室1 0 7取出。經 由以上的製程，就可完成F ED。 經濟部智慧时4-^s工消費合汴汪印製 根據以上的結構的F E D及其製造方法，因爲是在於 真空氣相環境中進行前面基板11與後面基板12的封合 工作，可藉由倂用烘焙及電子線洗淨而令基板的表面所吸 附的氣體充分地釋放出來，而且除氣劑膜也不受到氧化， 可獲得充分的吸氣效果。如此一來，可製得能夠維持高真 空度的F E D。 此外，藉由使用銥作爲封合材料，可抑制封合時的起 泡，而可獲得高氣密性及高封合強度的F E D。此外，被 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -37- 484167 A7 _B7 五、發明説明（ (請先閱讀背面之注意事項再填寫本頁) 設置在封合面上的銥層3 2係被形成爲具有許多彎折部 3 2 a的圖案，所以當在進行封合過程中，即使銥熔融的 時候，亦可防止銥的流出，而可將其保持在預定的位置。 因此，銥的處置上更趨簡單，即使針對於50英吋以上的大 型影像顯示裝置，亦可容易且確實地進行封合工作。 此外，根據本實施形態，銥層3 2是被形成在高親和 性的基底層3 1上面，所以當在進行封合過程中，即使銥 熔融的時候，亦可更確實地防止銥的流出，而可達成容易 且確實的封合工作。 此外，在上述的實施形態中，雖然是將銥層3 2採用 :在於沿著封合面1 1 a的各直線部延伸的部分的全長都 具備許多彎折部的構造，但是只要在於沿著封合面1 1 a 的直線部延伸的部分中的至少其中一部份具有彎折部或彎 曲部的話，就可與上述的實施形態同樣地，可獲得抑制熔 融的銥流動的效果。 此外，銥層3 2的圖案形狀，也並不限定爲補強支柱 構造狀，即使採用第1 9圖A〜第1 9圖D所示的形狀， 亦可獲得同樣的作用效果。也就是說，銥層3 2即使採用 :第1 9圖A所示的彎折部3 2的角度0爲銳角的鋸齒狀 圖案；或第1 9圖B所示的具有近乎直角的彎折部3 2的 連續的曲軸狀圖案；或第19圖C所示的具有近乎三角形 狀的連續圖案亦可。此外，銥層3 2的圖案形狀也不侷限 於彎折部的組合，亦可如第1 9圖D所示般地，採用：具 有許多彎曲部3 2 b的波狀圖案，或者組合了彎折部和彎 本纸張尺度適用;國國家標準（CNS ) A4規格（210X297公董) ~ -- 484167 A7 B7 五、發明説明（^ 曲部而成的圖案。 (請先閲讀背面之注意事項再填寫本頁) 另外，在上述的實施形態以及各種變形例之中，雖然 是將銥層3 2設定爲具有一定的寬度的形狀，但是，在於 沿著封合面1 1 a的直線部延伸的部分之中，亦可製作成 具有不同寬度的地方，並在邊緣形成了凹凸的形狀。 例如：亦可沿著銥層3 2的長軸方向互相分開且交替 地設置如第2 0圖A、第2 0圖C所示的矩形狀的凸部 4 0或者如第2 0圖B、第2 0圖D所示的圓弧狀的凸部 4 1° 這種情況係可如第2 0圖A、第2 0圖B所示般地， 將設在銥層3 2的其中一方的側緣的凸部4 0、4 1 ，相 對於設在另一方的側緣的凸部4 0、4 1 ，對於銥層的長 軸方向呈互相重疊地配置，或者，亦可如第2 0圖C、第 20圖D所示般地，將凸部40、41配置成對於銥層的 長軸方向呈互相交錯配置。 經濟部智慧財4^8工消費合泎社印发 即使使用這種銥層3 2的情況下，亦可抑制銥融化時 的流動。此外，凸部的形狀也不限於是矩形狀、圓弧狀， 亦可隨意地選擇。此外，只要將凸部設置在銥層3 2的至 少其中一方的側緣的話，即可獲得抑制銥的流動的效果。 此外，在上述的第3實施例中，雖然是採用將基底層 形成在封合面，在該基底層上形成銥層的結構，但是，亦 可不用基底層而採用直接在封合面上充塡銥層的結構。即 使在這種情況下，也是可藉由在銥層設置前述的彎折部或 彎曲部，或者，將側緣的形狀製作成具有凹凸，而得以抑 -39- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（ 制銥的流動，而獲得與前述的實施形態同樣的作用效果。 此外，亦可如前述第2實施例所示般地，採用一面施加超 音波一面塗敷銥的方式。 另外，前述的第3實施例，雖然是採用：以僅在於前 面基板1 1的封合面1 1 a形成了基底層3 1及銥層3 2 的狀態下進行封合工作的結構，但是，亦可採用：以僅在 於側壁1 8的封合面1 8 a ，或者如第2 1圖所示般地， 以在於前面基板1 1的封合面1 1 a與側壁1 8的封合面 1 8 a的雙方都形成了基底層3 1和銥層3 2的狀態來進 行封合工作的結構。 其他，本發明也不侷限於上述的實施例，只要在這個 發明的範圍內的各種變形亦屬可能。例如：將後面基板與 側壁之間，利用與上述方式相同的由基底層3 1及銥層 3 2融合而成的封合層來進行封合亦屬可行。此外，也可 以將前面基板或後面基板的其中一方的周緣部加以彎折， 而不隔介著側壁，直接將這兩個基板封合在一起的結構。 此外，在上述的實施例中，雖然是以電場放出型的電 子放出元件來當作電子放出元件，但是並不侷限於此，亦 可採用：ρ η型的冷陰極元件；表面傳導型的電子放出元 件；微晶片型的電子放出元件等的其他種類的電子放出元 件。又，本發明亦可適用在電漿顯示板（PDP);電激 發光（E L )等的其他種類的影像顯示裝置。 【圖面之簡單說明】 第1圖是本發明之一種實施形態的F E D的立體圖。 -40- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五、發明説明（ 第2圖是沿著第1圖中的Π—Π線的斷面圖。 第3圖是上述的F ED的螢光幕的平面圖。 (請先閱讀背面之注意事項再填寫本頁) 第4圖是在構成上述F E D的真空外圍器的前面基板 的封合面上形成銥層的狀態的立體圖。 第5圖是將上述在於封面部形成了銥層的前面基板與 後面基板-側壁的組裝體呈對面配置的狀態所示的立體圖 〇 第6圖是製造上述F E D所用的真空處理裝置的槪略 圖。 第7圖是上述真空處理裝置的組裝室的斷面圖。 第8圖係在於前面基板的封合面上的溝設置銥層的變 形例之立體圖。 第9圖是本發明之第2實施形態的F E D的立體圖。 第1 Ο A圖是顯示在構成上述F E D真空外圍器的側 壁的封合面上形成基底層以及銥層的狀態之立體圖。 第1 Ο B圖是顯示在構成上述F E D真空外圍器的前 面基板的封合面上形成基底層以及銥層的狀態之立體圖。 經濟部智慧財產^8工消費合it社印製 第1 1圖係顯示本發明的實施例的封合材充塡裝置的 立體圖。 第1 2圖是顯示利用上述封合材充塡裝置對於前面基 板的封合面充塡銥的過程之立體圖。 第1 3圖是顯示將在上述封合部被形成了基底層以及 銥層的後面基板的側壁組合體與前面基板相對面配置的狀 態的斷面圖。 本紙張尺度適用中國國家標準（CNS )八4胁（210X297公董) ~ 484167 A7 _____B7 _ 五、發明説明（^ (請先閲讀背面之注意事項再填寫本頁) 第1 4圖是顯示在形成第二實施例的變形例的F E D 真空外圍器的過程中，在於前面基板的封合面形成了基底 層以及銥層的狀態之斷面圖。 第1 5圖是顯示本發明的第三實施例的F E D的斷面 圖。 第1 6圖A是顯示在構成上述第三實施例的f E D真 空外圍器的前面基板的封合.面上形成基底層以及銥層後的 狀態的平面圖。 第1 6圖B是顯示將上述銥層的電路圖案擴大後的平 面圖。 第1 7圖是顯示在上述前面基板的封合面上形成基底 層以及銥層後的狀態的立體圖。 第1 8圖是顯示將在上述封合部形成了基底層以及銥 層後的前面基板與後面側組裝體相對面配置的狀態的斷面 圖。 第1 9圖A〜第1 9圖D是分別槪略地顯示設在上述 封合部的銥層的電路圖案的變形例的平面圖。 第2 0圖A〜第2 0圖D是分別槪略地顯示設在上述 封合部的銥層的電路圖案的其他變形例的平面圖。 第2 1圖是顯示在形成本發明的其他實施例的F E D 真空外圍器的過程中，在於前面基板的封合面形成了基底 層以及銥層的狀態之斷面圖。 【圖號說明】 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -42- 484167 經濟部智慧財/i^a(工消費合作社印製 A7 B7五、發明説明（j 1〇：真空外圍器 1 1 :前面基板 1 1 a :封合面 1 2 :後面基板 1 4 :支承構件 1 6 :螢光幕 1 7 :金屬背層 1 8 :側壁 1 8 a :封合面 1 9 :溝 2 0 :黑色光吸收部 2 2 :電子放出元件 2 4 :導電性陽極層 2 5 :孔穴 2 6 :二氧化矽膜 2 8 :閘極電極 3 0 :低熔點玻璃；透明釉玻璃 3 1 :基底層 3 2 :銥層 3 2 a :彎折部 3 2 b :彎曲部 4 0、4 1 :凸部 4 0 a :載置面 4 2 :加熱板 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -43- 484167 A7 B7 五 '發明説明（41) 4 4 :定位機構 4 6 :充塡頭 4 8 :充塡頭移動機構 5 0 :定位爪 5 2 :推爪 5 4 :儲留部 5 5 :噴嘴 5 8 :供給管 6 0 :加熱器部 6 2 : Z軸驅動機器人 6 4 : Y軸驅動機器人 66 :X軸驅動機器人 6 7 :輔助軌道 1 0 0 :真空處理裝置 1 0 1 :載裝室 1 0 2 :烘焙·電子線洗淨室 1 0 3 :冷卻室 1 0 4 :除氣劑膜之蒸鍍室 1 0 5 :組裝室 1 0 6 :冷卻室 1 0 7 :卸載室 110:前面基板設置台 1 1〇a :加熱器 112:後面基板固定用夾具 -44- (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 484167 A7 B7 五 發明説明（j 器動 熱驅 加向 2 方 第下 : 上 a· · 2 4 (請先閱讀背面之注意事項再填寫本頁) ¢. £ α< i 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -45-T Seal of Wisdom, Time, Capital, Industrial and Consumer Consumption of the Ministry of Economic Affairs A7 __B7__ V. Description of Invention (2) Display image. This FED can set the gap between the front substrate and the rear substrate to a few millimeters or less. Therefore, compared with the cathode ray tube (CRT) currently used as a display for televisions and computers, this FED can achieve Lightweight and thin effect. In the above-mentioned flat-type display device, the degree of vacuum inside the vacuum peripheral must be maintained at, for example, 10 to 5 to 10 to 6 Pa. The traditional exhaust process uses a baking process that heats the vacuum peripheral to a level of 300 t to release the surface adsorbed gas inside the vacuum peripheral, but this exhaust method still cannot fully surface adsorb the gas. Release. Therefore, for example, the structure of a flat-panel display device disclosed in Japanese Patent Laid-Open No. 9-8 2 2 4 5 is that a metal back film formed on a screen of a front substrate is covered with a layer T i, Z The structure of a degassing material composed of an alloy of r or T i and Z r; or a structure in which the metal back film itself is formed by using such a degassing material; or a portion other than the electron emission element in the image display area A structure in which such a degassing material is arranged. However, the flat-panel display device disclosed in Japanese Patent Application Laid-Open No. 9-82245 discloses that a degassing material is formed in a general panel manufacturing process, so that the surface of the degassing material is naturally oxidized. The degassing material, especially its surface activity, is very important, so the degassing material whose surface has been oxidized cannot obtain a sufficient gettering effect. Regarding how to increase the vacuum degree inside the vacuum peripheral, it has been proposed that: the rear substrate, the side wall and the front substrate are placed in a vacuum device. < 297 mm) ------------ (Please read the precautions on the back before filling this page) 4 -5- 484167 A7 ____B7_ V. Description of the invention (3) (Please read the back first Note: Please fill in this page again) After baking these components in a vacuum gas phase, irradiating electrons to release the surface adsorbed gas, a degassing film is formed, and then this state is maintained in the vacuum gas phase. A method of sealing a side wall with a rear substrate and a front substrate, such as transparent glaze glass. According to this method, the cleaning effect of the electron beam can be used to sufficiently release the adsorbed gas on the surface, and the deaeration film will not be oxidized, and a sufficient gettering effect can be obtained. Moreover, it is not necessary to install an exhaust pipe, which does not cause unnecessary waste of space in the image display device. However, if you want to use transparent glaze glass for sealing in a vacuum, you must heat the transparent glaze glass to more than 400 ° C. At this time, many bubbles will be generated from the transparent glaze glass, which will cause the airtightness and sealing strength of the vacuum peripheral device to deteriorate, and there will be a problem of reducing reliability. In addition, in terms of the characteristics of the electron emission element, it is sometimes better to avoid high temperatures exceeding 400 ° C. If this is the case, it is best not to use a transparent glaze glass for sealing. [Summary of the present invention] Intellectual property of the Ministry of Economic Affairs (produced by the Industrial and Commercial Corporation) The present invention was developed in view of the above situation, and its purpose is to provide: It is easy to seal the peripheral device, In addition, an image display device capable of ensuring a high degree of vacuum inside, a manufacturing method thereof, and a sealing material filling device. In order to achieve the above object, the image display device of the present invention includes: a rear substrate; and a front surface facing the rear substrate. The peripheral device of the substrate; and many electronic discharge components provided in the peripheral device. The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) * '~ Ministry of Economic Affairs 4¾¾¾¾ 工 消费 合 TITI 踅 踅 484167 A7 B7 --------_ 15. Description of the invention (4) The front substrate and the rear substrate are located on the peripheral edge, and are directly or indirectly sealed together with a low-melting metal sealing material. According to the present invention Image display device, the melting point of the low-melting metal sealing material is preferably lower than 350 ° C. Moreover, the low-melting metal sealing material is preferably iridium or an iridium-containing alloy The method for manufacturing an image display device of the present invention is a method for manufacturing an image display device including: a rear substrate having a rear substrate and a front substrate disposed facing the rear substrate; and a method of manufacturing an image display device including a plurality of electronic emission elements provided in the peripheral. The method is characterized in that the method includes: a process of disposing a low-melting-point metal sealing material along a sealing surface between the rear substrate and the front substrate; and heating the rear substrate and the front substrate in a vacuum gas phase. The low-melting metal sealing material is melted to directly or indirectly seal the rear substrate and the front substrate together. According to the method of manufacturing an image display device of the present invention, the melting point of the low-melting metal sealing material is the highest. It is preferably lower than 3 50 ° C. Moreover, the low-melting metal sealing material is preferably iridium or an iridium-containing alloy. In addition, the vacuum degree of the vacuum gas phase is preferably set to less than 10-3 p a According to the method of manufacturing an image display device of the present invention, the sealing process includes: heating the vacuum vapor phase to more than 2 5 After the above temperature, the exhaust process of exhaust gas is performed; and after the exhaust process, the low-melting-point metal sealing material is used to cool the front substrate and the rear substrate at a lower temperature than the exhaust process. The process of sealing between the sealing surfaces; and the Chinese national standard ^? T ^ Ta4 (210X297), after being sealed by the above-mentioned low-melting metal sealing material-: -------- I. --=--------S----11 ·· ----- n κϋ; ί --------- -------:------ -i: ------ (Please read the notes on the back before filling this page) 484167 A7 B7 V. Description of the invention (5) (Please read the notes on the back before filling this page) The process to atmospheric pressure. The sealing system using the above-mentioned low-melting metal sealing material may be performed at a temperature of 60 to 300 ° C. In addition, according to the method for manufacturing an image display device of the present invention, in the above-mentioned sealing process, a low-melting-point metal sealing material is first arranged after the sealing surface between the front substrate and the rear substrate, and the front substrate and the rear substrate are caused The substrate is moved relative to each other for sealing. • The direction of the relative movement here can be any direction within the three-degree space, as long as it is a direction that allows the distance between the two to be close. In addition, it is possible to move not only one of the front substrate or the rear substrate, but also both of them. In addition, the method for manufacturing an image display device of the present invention is such that a holding portion for holding a low-melting-point metal sealing material is provided on at least one of the sealing surfaces between the front substrate and the rear substrate, and A melting point metal sealing material is arranged in this holding portion. The holding portion is preferably a groove formed on the sealing surface or a layer formed on the sealing surface and made of a material having a high affinity with a low-melting metal sealing material. The material having a higher affinity with the low melting point metal sealing material is preferably nickel, gold, silver, copper, or an alloy of these metals. According to the image display device and the manufacturing method thereof of the present invention configured as described above, the front substrate and the rear substrate constituting the peripheral device can be sealed in a vacuum gas phase by using a low-melting-point metal sealing material, and It is possible to perform sealing at a low temperature (a temperature of 300 ° C or lower) that does not cause thermal damage to an electron emission element or the like formed on a rear substrate. In addition, if it is based on the traditional manufacturing method, it must have the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8- 484167 A7 B7 6 V. Description of the invention According to the rate of effect, if the gas is exhausted, and the tube, fine, etc. are used for the fine exhaustion of the gas: Qi such as fll. (Please read the precautions on the back and fill in this page.) Therefore, it is possible to produce a flat-type image display device with a peripheral device that can maintain a high degree of vacuum inside and prevent image deterioration due to thermal degradation of the electron emission element. Another image display device of the present invention includes a peripheral device having a rear substrate and a front substrate disposed facing the rear substrate, and a plurality of electron emission elements provided in the peripheral device. The front substrate and the rear substrate use a base layer. And a metal sealing material layer of a different type from the base layer, which is provided on the base layer, and is directly or indirectly sealed together. Another image display device of the invention includes a peripheral device having a rear substrate, a front substrate disposed facing the rear substrate, and a sidewall disposed between a peripheral edge portion of the front substrate and a peripheral edge portion of the facing substrate; And a plurality of pixel display elements provided on the inner side of the peripheral device, printed at least one of the above-mentioned front substrate and the side wall, or at least one of the above-mentioned rear substrate and the side wall, by Qi Zou and Yuehui Choi 4¾ staff consumer. The base layer and a metal sealing material layer of a different type from the base layer provided on the base layer are sealed together. The method for manufacturing an image display device of the present invention is used to manufacture a device having: A method for an image display device for a rear substrate and a vacuum substrate facing the front substrate disposed on the rear substrate; and a method for displaying an image of a plurality of pixel display elements provided on the inner side of the peripheral, the characteristics of which are: CNS) A4 specification (210X297 mm) -9- 484167 A7 B7 V. Description of the invention (7) This method has: (Please read the notes on the back first (Please fill in this page again)) the process of forming a base layer along the sealing surface between the back substrate and the front substrate; and the process of forming a metal sealing material layer different from the base layer on the base layer And the process of heating the rear substrate and the front substrate in a vacuum gas phase to melt the metal sealing material layer to directly or indirectly seal the rear substrate and the front substrate together. The present invention is as described above. In the image display device and the manufacturing method thereof, the metal sealing material is a low-melting metal material having a melting point of less than 350 ° C, for example, iridium or an iridium-containing alloy. The base layer is made of stomach The metal sealing material has a good wettability and air-tightness, that is, a material with high affinity. It is preferably a metal paste containing at least one of silver, gold, aluminum, nickel, cobalt, and copper. ; A metal coating or a vacuum deposition film containing at least one of silver, gold, nickel, cobalt, and copper: or a glass material. The Ministry of Economic Affairs, the Ministry of Economic Affairs, the Consumer Electronics Co., Ltd., and itfi printed the image display device and the manufacturing method thereof according to the above-mentioned structure. The rear substrate and the front substrate were directly or indirectly sealed by using a metal sealing material layer. Together, the sealing operation can be performed at a low temperature that does not cause thermal damage to an electron emission element or the like provided on the rear substrate. Moreover, many air bubbles are not generated as in the case of using a transparent glaze glass, so that the airtightness and sealing strength of the vacuum peripheral device can be improved. At the same time, because a different kind of base layer is provided than the metal sealing material layer, even if the viscosity of the metal sealing material is reduced during sealing, the base layer can be used to prevent the metal sealing material. And keep it in the predetermined position. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297). -10- 484167 A7 B7 V. Description of the invention (8) (Please read the notes on the back before filling This page). Therefore, since it can be handled relatively easily, it is possible to obtain an image display device capable of performing sealing work easily and reliably in a vacuum gas phase, and a method for manufacturing the same. In addition, the method for manufacturing an image display device of the present invention is used to manufacture a peripheral device having a rear substrate and a front substrate arranged facing the rear substrate; and a plurality of pixel display elements provided inside the peripheral device. The method of an image display device is characterized in that: the method includes a process of applying an ultrasonic wave on the sealing surface between the rear substrate and the front substrate on the one hand and filling the molten metal sealing material on the other; and After the metal sealing material is filled, the metal sealing material is heated in a vacuum gas phase to melt the metal sealing material, and the rear substrate and the front substrate are directly or indirectly sealed together by using the sealing surface. the process of. The Ministry of Economic Affairs of the People ’s Republic of China and the Philippines, manufacturing and other ITFI printing, and another method of manufacturing an image display device of the present invention are used to manufacture a device having a rear substrate, a front substrate disposed facing the rear substrate, and an arrangement. A peripheral device that is sealed between the peripheral portion of the front substrate and the peripheral portion of the rear substrate to the side wall of the front substrate and the rear substrate; and a plurality of pixel display elements provided inside the peripheral device; At least one of the sealing surface between the front substrate and the side wall, or the sealing surface between the rear substrate and the side plate, is a method for manufacturing an image display device sealed with a metal sealing material layer, characterized in that: : This method includes: for at least one of the sealing surfaces described above, the process of applying ultrasonic waves on the one hand and filling the molten metal sealing material on the other; and filling the above-mentioned -11- this paper standard is applicable to the country of China Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (9) After the metal sealing material, the metal sealing material is vacuum-vaporized. Heat to melt 'above the rear substrate and the front substrate and the side wall to be sealed together in the process using the sealing face. In addition, the method for manufacturing an image display device according to the present invention includes: a process of filling the metal sealing material; and applying ultrasonic waves on the one hand and continuously filling the molten metal seal along the sealing surface on the other. Process of forming a metal sealing material layer extending along the sealing surface. In addition, the method for manufacturing an image display device according to the present invention includes a process of forming a base layer of a different type from the metal sealing material on the sealing surface, and forming the base layer before the base layer is formed on the base layer. Filled with the metal sealing material. In the method for manufacturing an image display device related to the present invention, the metal sealing material is a low-melting metal material having a melting point of less than 350 ° C, such as iridium or an iridium-containing alloy. In addition, the above-mentioned base layer is made of a material having good wettability and air-tightness with respect to a metal sealing material, that is, a material with high affinity, and is preferably composed of at least silver, gold, aluminum, nickel, cobalt, A metal paste of at least one of copper; a metal plating layer or a vacuum deposited film containing at least one of silver, gold, aluminum, nickel, cobalt, and copper; or a glass material. According to the method of manufacturing an image display device according to the above-mentioned configuration, the rear substrate and the front substrate are directly or indirectly sealed together by using a metal sealing material layer, so that an electron emission element provided on the rear substrate can be used. Seal at low temperatures that do not cause thermal damage. Moreover, many bubbles will not occur as in the case of using transparent glaze glass, so • 12- (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X29 * 7mm) 484167 A7 B7_ V. Description of Invention (8) (Please read the precautions on the back before filling this page). Therefore, since it can be handled relatively easily, it is possible to obtain an image display device capable of performing sealing work easily and reliably in a vacuum gas phase, and a method for manufacturing the same. In addition, the method for manufacturing an image display device of the present invention is used to manufacture a peripheral device having a rear substrate and a front substrate arranged facing the rear substrate; and a plurality of pixel display elements provided inside the peripheral device. The method of an image display device is characterized in that: the method includes a process of applying an ultrasonic wave on the sealing surface between the rear substrate and the front substrate on the one hand and filling the molten metal sealing material on the other; and After the metal sealing material is filled, the metal sealing material is heated in a vacuum gas phase to melt the metal sealing material, and the rear substrate and the front substrate are directly or indirectly sealed together by using the sealing surface. the process of. The Ministry of Economic Affairs, Smart Finance, 447 staff consumer # 合 汴 吐出 发 Also, another method of manufacturing the image display device of the present invention is used to manufacture: a rear substrate having a rear substrate, a front substrate disposed facing the rear substrate, and A peripheral device provided between a peripheral edge portion of the front substrate and a peripheral edge portion of the rear substrate and sealed to the sidewalls of the front substrate and the rear substrate; and a plurality of pixel display elements provided inside the peripheral device. At least one of the sealing surface between the front substrate and the side wall, or the sealing surface between the rear substrate and the side plate, is a method for manufacturing an image display device sealed with a metal sealing material layer, characterized in that: : This method includes: for at least one of the sealing surfaces described above, the process of applying ultrasonic waves on the one hand and filling the molten metal sealing material on the other hand; and filling the above -11-this paper size is applicable to the country of China Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of invention (9) (Please read the precautions on the back before filling this page) Metal sealing material After the heating phase, the vacuum air sealing said metal member to melt it, the above-described rear substrate and the front substrate and the side wall to be sealed together in the process using the sealing face. In addition, according to the method of manufacturing an image display device of the present invention, a process of filling the aforesaid metal sealing material; and applying ultrasonic waves on the one hand and continuously filling the molten metal along the sealing surface on the other hand The process of sealing material to form a metal sealing material layer extending along the sealing surface. In addition, the method for manufacturing an image display device according to the present invention includes a process of forming a base layer of a different type from the metal sealing material on the sealing surface, and forming the base layer before the base layer is formed on the base layer. Filled with the metal sealing material. According to Qi Zou, Zeng Huishi, 4 ^^ 5η industrial consumption, ^ vomiting-in the method of manufacturing the image display device related to the present invention, the above metal sealing material uses a low melting point of less than 350 ° C. Metal materials' such as: iridium or iridium-containing alloys. In addition, the above-mentioned base layer is made of a material having good wettability and air-tightness with respect to a metal sealing material, that is, a material with high affinity, and is preferably composed of at least silver, gold, aluminum, nickel, cobalt, A metal paste of at least one of copper; a metal plating layer or a vacuum deposited film containing at least one of silver, gold, aluminum, nickel, cobalt, and copper; or a glass material. According to the method of manufacturing an image display device according to the above-mentioned configuration, the rear substrate and the front substrate are directly or indirectly sealed together by using a metal sealing material layer, so that an electron emission element provided on the rear substrate can be used. Seal at low temperatures that do not cause thermal damage. Moreover, many bubbles will not occur as in the case of using transparent glaze glass, so • 12- This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 484167 A7 B7 V. Description of the invention (1〇 ) (Please read the precautions on the back before filling this page) It can improve the air tightness and sealing strength of the vacuum peripheral. Furthermore, when the sealing surface is filled with a metal sealing material, the ultrasonic sealing is applied on the one hand and the metal sealing material is filled on the other hand, so that the wettability of the metal sealing material to the sealing surface can be improved. In the case where iridium or the like is used as the metal sealing material, the metal sealing material can also be sufficiently filled in a desired position. Therefore, an image display device capable of easily and reliably performing a sealing operation in a true air phase and a method for manufacturing the same can be obtained. In addition, when the molten metal sealing material is continuously filled along the sealing surface, the molten metal sealing material is filled by applying ultrasonic waves on the one hand, and can be formed along the sealing surface. A layer of metal sealing material extending without interruption. After the formation of a different kind of base layer from the above-mentioned metal sealing material on the sealing surface, the above-mentioned metal sealing material is filled with the above-mentioned metal sealing material. At the time, even when the filled metal sealing material is heated and melted, the base layer can be used to prevent the metal sealing material from flowing to keep it in a predetermined position. Therefore, it is easy to handle. Sealing can be carried out easily and surely in the vacuum gas phase. Especially by applying ultrasonic waves on the one hand and filling the metal sealing material on the other hand, when the filling is completed, a part of the metal sealing material has spread. The metal sealing material layer is formed in the base layer. Therefore, when the sealing is performed, the flow of the metal sealing material can be more surely prevented and maintained at a predetermined position. In addition, the above-mentioned metal sealing is filled. In the process of the material, the size of the ultrasonic output of the ultrasonic wave or the size of the discharge aperture of the metal sealing material can be used to control the metal sealing material. Spit out-13- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (21 × 297 mm) 484167 A7 __B7 5. Description of the invention (H). In addition, the sealing material filling device of the present invention is manufactured The image display device is a sealing material filling device for filling a metal sealing material to a sealing surface. The sealing material filling device includes: a support table for positioning and supporting the sealed composition having the sealing surface; and a storage device. A storage section for the molten metal sealing material; and a nozzle for filling the sealing surface with the molten metal sealing material sent from the storage section; and a nozzle for charging the molten metal sealing material from the nozzle to A filling head of a supersonic wave generating section to which ultrasonic waves are applied to the molten metal sealing material of the sealing surface; and a filling head moving mechanism for causing the filling head to relatively move the sealing surface. Another image display device related to this invention includes a front substrate having a rear substrate and a front substrate disposed opposite to the rear substrate, and directly or indirectly sealed to the rear substrate with a metal sealing material. A peripheral device; and a plurality of pixel display elements provided inside the peripheral device, the metal sealing material is provided on a sealing surface between the rear substrate and the front substrate to form an entire periphery of the sealing surface. A long metal sealing material layer, and the metal sealing material layer includes a bent portion or a curved portion in at least a portion of a portion extending along a straight portion of the sealing surface. Also, with this invention A related other image display device includes a peripheral device having a rear substrate and a front substrate disposed opposite to the rear substrate, and directly or indirectly sealed to the front substrate by a metal sealing material; and For the plurality of pixel display elements inside the peripheral device, the metal sealing material is provided on the rear substrate and the front -14- (please read the precautions on the back before filling this page) This paper size is applicable to China Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (12 > The sealing surface between the substrates' forms the entire circumference of this sealing surface A metal sealing material layer, and the metal-based sealing material layer portion extends along a straight line in that portion of the sealing face at least a portion of the 'includes a recess formed in the side edges convex. In addition, the method of manufacturing an image display device related to this invention is used to manufacture a device including a rear substrate and a surface disposed opposite to the rear substrate, and directly or indirectly sealed to the rear substrate with a metal sealing material. A peripheral device of a front substrate; and a method of an image display device of a plurality of pixel display elements provided inside the peripheral device, comprising: filling a metal sealing material between the rear substrate and the front substrate; The process of forming a metal sealing material layer extending over the entire circumference of the sealing surface; and after filling the metal sealing material, the metal sealing material is heated in a vacuum gas phase so that The process of melting is to directly or indirectly seal the rear substrate and the front substrate by using the sealing surface; and in the process of filling the metal sealing material, the metal sealing material layer is At least a part of the portion extending along the straight portion of the sealing surface forms a bent portion or a bent portion. In addition, another method for manufacturing an image display device related to this invention includes: filling a sealing surface between the rear substrate and the front substrate with a metal sealing material to form a sealing surface spread over the sealing surface. A process of extending the entire circumference of the metal sealing material layer; and after filling the metal sealing material, heating the metal sealing material in a vacuum gas phase to melt it, so as to use the sealing surface to separate the rear surface The process of sealing the substrate and the front substrate directly or indirectly; and the process of filling the above-mentioned metal sealing material -15- (Please read the precautions on the back before filling this page) This paper size applies Chinese national standards ( CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (13) (Please read the precautions on the back before filling this page), in order to seal the inside of the metal sealing material layer along the above The above-mentioned metal sealing material is filled with at least a part of the portion where the straight portion of the surface extends to form a side edge having unevenness. In the image display device and the manufacturing method thereof related to the present invention, the metal sealing material is a low-melting-point metal material having a melting point of less than 350 ° C, such as iridium or an iridium-containing alloy. According to the image display device and the manufacturing method thereof described above, the rear substrate and the front substrate are directly or indirectly sealed together by using a metal sealing material layer, so that an electron emitting element provided on the rear substrate can be used. Seal at low temperatures that do not cause thermal damage. Moreover, many air bubbles are not generated as in the case of using transparent glaze glass, so the airtightness and sealing strength of the vacuum peripheral device can be improved. Printed by the Ministry of Economic Affairs / Smart Industry Cooperative Co., Ltd. In addition, at least a part of the metal sealing material layer extending along the linear portion of the sealing surface has a bent portion or a bend unit. Alternatively, in the metal sealing material layer, at least a part of the portion extending along the straight portion of the sealing surface is formed with a side edge having unevenness. Therefore, even when the metal sealing material is melted and the viscosity is reduced during sealing, the unevenness of the bent portion, the curved portion, or the side edge can be used to suppress the flow of the metal sealing material, and it can be maintained. At the predetermined position. Therefore, the processing of the metal sealing material can be facilitated, and an image display device capable of easily and surely performing a sealing operation in a vacuum gas phase and a manufacturing method thereof can be obtained. [Detailed description of the embodiment] Hereinafter, an embodiment in which the image display device of the present invention is applied to a F E D will be described in detail "with drawings". This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) -16-484167 A7 B7_ V. Description of the invention (14) (Please read the precautions on the back before filling this page) Such as the first mouse and the second As shown in the figure, this FED system is provided with a front substrate 1 1 and a rear substrate 12 made of rectangular glass as an insulating substrate, and the two substrates are separated by 1. 5 ~ 3. The clearance of 0 mm is arranged opposite to the ground. In addition, the front substrate 11 and the rear substrate 12 are connected to each other through the rectangular frame-shaped side walls 18 to form a flat rectangular vacuum peripheral 10 ° in which the interior is maintained in a vacuum state. A plurality of supporting members 14 are provided inside the vacuum peripheral device 10 to support a load applied to the atmospheric pressure on the rear substrate 12 and the front substrate 11. These support members 14 extend in a direction parallel to the long side of the vacuum peripheral device 10, and are arranged at predetermined intervals in a direction parallel to the short side. The shape of the support member 14 is not particularly limited, and a columnar support member may be used. 1 spring Γ, coin? ^ 1? 41 * 7,411 ^: ^-?-^ 4 ^ 土 卩 4 As shown in FIG. 3, a fluorescent screen 16 is formed on the inner surface of the front substrate 1 1. The fluorescent screen 16 is formed by phosphor layers R, G, and B which emit light in three colors of red, green, and blue, and a matrix-shaped black light-absorbing portion 20. The support members 14 are arranged so as to be hidden in the shadow of the black light-absorbing portion. A metal back layer 17 made of an isoelectric thin film such as an A 1 film is formed on the screen 16. The metal back layer 17 can reflect the light emitted from the fluorescent screen 16 toward the rear substrate 1 2 as an electron source to increase the brightness. In addition, the metal back layer 17 can prevent the accumulation of electric charges by imparting conductivity to the image display area of the front substrate 11, and furthermore, for the electrons on the back substrate 12 side described later-17-This paper standard applies Chinese national standards ( CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (d (Please read the precautions on the back before filling in this page) The discharge source functions as the anode electrode. In addition, it can prevent the vacuum peripheral device 1 〇 The gas remaining inside is affected by electrons and ionized by ionization, which damages the screen 16. As shown in Fig. 2, there are many on the inner surface of the rear substrate 12 The electric field emission type electron emission elements 2 2 can be used as electron emission sources for exciting the phosphor layers R, G, and B to emit electron beams respectively. These electron emission elements 2 2 are arranged in a plurality of columns corresponding to each pixel and A plurality of rows have a function g as a pixel display element in this invention. In more detail, a conductive cathode layer 24 is formed on the inner surface of the rear substrate 12, and in this guide, A silicon dioxide film 26 having many holes 25 is formed on the passive cathode layer 24. On the silicon dioxide film 26, a gate electrode 28 made of molybdenum, niobium, etc. is formed. The inner surface of 2 is provided with a tapered electron emission element 2 2 made of molybdenum or the like in each of the holes 25. In addition, an electron emission element 2 2 is formed on the rear substrate 12 Matrix-like wiring (not shown), etc. connected to the Ministry of Economic Affairs, which is compatible with the above-mentioned structured FED, and the image signal is input to the electronic discharge element 2 which is formed into a simple matrix system. 2 and the gate electrode 28. In the case of the electron emission element 2 2 as a reference, a gate voltage of + 100 V is applied at the highest brightness state. In addition, a screen of 16 is applied with + 10 k V. The size of the electron beam emitted from the electron emission element 2 2 is modulated by the voltage of the gate voltage 28, and this electron beam will excite the phosphor layer R of the screen 16 、 -18- This paper size applies to China National Standard (CNS) A4 (210X297 mm) 484167 A7 ________ £ 7 ____ 5. Description of the invention (^ G, B makes it light and display the image. Therefore, because the high voltage is applied to the screen 16, the front substrate 1 1 and the rear substrate 12 2. The side glass 18 and the support glass 14 are made of high-melting glass. In addition, as will be described in detail later, a low-glazed glass or the like is used between the rear substrate 12 and the side wall 18. Melting point glass 30 is used for sealing, and a low melting point metal material layer such as an iridium (I η) layer 32 has been formed between the front substrate 11 and the side wall 18 for sealing. Together. Next, the manufacturing method of F E D with the above-described configuration will be described in detail. First, a screen 16 is formed on a glass plate as the front substrate 11. This is to prepare a glass plate of the same size as the front substrate 11 first, and then this glass plate uses a plotter to form a phosphor layer pattern. Then, the glass plate on which the phosphor layer pattern has been formed is placed in a positioning jig together with the glass plate for the front substrate, and then placed on an exposure table for exposure and development to form a fluorescent screen 16. Economy Zou Huishi 4 fl 卬% Secondly, on the fluorescent screen 16 formed in this way, an aluminum film having a thickness of less than 2500 nm is formed by a vapor deposition method, a sputtering method, or the like, as the metal back layer 17. Next, an electron emission element 22 is formed on a rear substrate 12 made of an insulating substrate such as a glass plate or ceramic. At this time, a matrix-shaped conductive cathode layer is formed on a glass plate, and then a silicon dioxide film is formed on the conductive cathode layer by using, for example, a thermal oxidation method, a chemical vapor deposition method, or a sputtering method. membrane. -19- (Please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7_ 5. Description of the invention (1?) On the film, a metal film for forming a gate electrode, such as molybdenum or niobium, is formed by a sputtering method or an electron beam evaporation method, for example. Secondly, on this metal film, a uranium protection agent pattern having a shape corresponding to the gate electrode to be formed is formed by printing. Then, using this resist pattern as a mask, the metal film is etched by a wet etching method or a dry uranium etching method to form a gate electrode 28. Next, using the resist pattern and the gate electrode as a mask, the insulating film is etched by a wet etching method or a dry etching method to form the holes 25. Then, after the resist pattern is removed, electron beam evaporation is performed on the rear substrate surface from a direction inclined by a predetermined angle to form a peel on the gate electrode 28 made of, for example, aluminum, nickel, and cobalt. Floor. Then, from the vertical direction of the rear substrate surface, for example, molybdenum is used as a material for forming the cathode, and the electron beam evaporation method is used for vapor deposition. In this way, an electron emission element 2 2 can be formed inside each of the holes 25. Next, the lift-off method is used to remove the release layer together with the metal film formed thereon. Then, the rear surface of the substrate 12 after the electron emission element 22 has been formed is sealed to each other between the peripheral edge portion of the substrate 12 and the rectangular frame-shaped side wall 18 in a low-melting-point glass 30 in an atmospheric atmosphere. At the same time, the plurality of support members 14 are sealed to the rear substrate 12 by using a low-melting glass 30 in an atmosphere of an atmospheric gas phase. That is, first, the organic solvent is mixed with the transparent glaze glass, and then the paste-like transparent glaze glass material that has been adjusted in viscosity with an adhesive such as nitrocellulose is applied to the sealing of the rear substrate 12 and the side wall 18 -20- (Please read the precautions on the back before filling this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (18) Either one. Next, after the joints of the back substrate 12 and the side wall 18 which have been coated with the transparent glaze glass 30 are brought into contact with each other, they are put together in an electric furnace and heated until they exceed the transparent glaze glass 30. Sealing is performed at a temperature above the melting point. And, the thing in which the rear substrate 12 and the side wall 18 are sealed together in this manner is referred to as a "rear substrate-side wall assembly". Next, the back substrate 12 and the front substrate 11 are sealed to each other with the side wall 18 interposed therebetween. At this time, as shown in FIG. 4, firstly, it is at least one of the sealing surface, that is, the upper surface of the side wall 18 or the outer surface peripheral portion of the front substrate 11, for example, on the front substrate 1 1 On the outer peripheral edge portion, iridium, which is a metal sealing material, is coated to form iridium layers 3 2 that extend throughout the entire periphery of the base layer. The width of the iridium layer 32 is about 6 mm. As the metal sealing material, a low-melting-point metal material having a good melting point and a bonding property of less than about 350 ° C or lower is preferably used. The characteristics of the iridium (I η) used in this embodiment are not only a very low melting point, but only 156. Only 7 ° C, and the vapor pressure is very low, soft and impact resistant, has the advantages of not embrittlement even at low temperatures. Moreover, depending on the conditions, it can be directly bonded to glass, so it is a material very suitable for the purpose of the present invention. In addition, as for the low-melting-point metal material, not only the iridium alone, but also elements such as silver oxide, silver, gold, copper, aluminum, zinc, tin, etc., or a composite alloy to which these elements are added may be used. For example: Eutectic alloy 97% -silver 3% 'eutectic alloy' has a lower melting point, only 141 ° C, and can increase the machine -21 _ (Please read the precautions on the back before filling this page) This paper size applies China National Standard (CNS) A4 specification (210X297 public director) 484167 A7 B7 V. Description of the invention (^ Mechanical strength. (Please read the precautions on the back before filling this page) In addition, in the above description, although the so-called The expression of "melting point" is "but if it is an alloy made of two or more metals", sometimes its melting point is not fixed at a single temperature. Generally, in this case, the "liquidus temperature" "And" Solid Phase Temperature, "are defined. The former refers to the temperature at which a part of the alloy begins to harden when the temperature is lowered from the state of the liquid; the latter refers to the temperature at which all the alloys become hardened. In the embodiment, for convenience of explanation, even in this case, the expression of "melting point" is adopted, and the "solid phase temperature" is also referred to as "melting point." Secondly, the sealing As shown in FIG. 5, the front substrate 1 1 with the iridium layer 3 2 formed on the bonding surface and the rear substrate-side wall combination system in which the side wall 18 is sealed on the rear substrate 12 is sealed as shown in FIG. 5. In a state facing each other and facing each other at a predetermined distance, they are held by a jig described later and are put into a vacuum processing apparatus. As shown in FIG. 6, this vacuum processing apparatus The 100 series includes: a loading chamber 101 arranged in sequence; a baking and electronic wire cleaning chamber 10; a cooling chamber 103; a deaerator film evaporation chamber 104; an assembly chamber 105 ; Cooling chamber 106 and unloading chamber 107. These chambers are processing chambers that can be made vacuum-processable. When manufacturing FED, all processing chambers are vacuum-evacuated. Moreover, they are adjacent to each other. The processing chambers are connected together by a gate valve, etc. The rear substrate-side wall assembly and the front substrate 11 facing each other at a predetermined interval are put into the loading chamber 1 0 1 and the loading chamber 1 0 1 is pumped inside. This paper size applies to China National Standard (CNS) A4 (210 × 297 mm) 48416 7 A7 B7 __ V. Description of the invention (2 () (Please read the precautions on the back before filling in this I) After the gas becomes vacuum, it will be sent to the baking and electronic wire cleaning room 1 〇2. When baking and electronic wire When the high degree of vacuum in the cleaning chamber 1 0 2 becomes 1 0 — 5 Pa, the temperature of the rear substrate-side wall assembly and the front substrate 1 1 is heated to 300 ° C, and the components are baked to make each component The gas adsorbed on the surface is fully released. At this temperature, the iridium layer (melting point is about 15 6 ° C) 3 2 will be melted. In addition, it is heated in the baking and electron wire cleaning room 1 02 At the same time, the electron beam is irradiated from the electron beam generating device (not shown) installed in the baking and electron beam cleaning chamber 102 to the screen surface of the front substrate 11 and the electron emission of the rear substrate 12 Component face. This electronic wire is scanned by the deflection device mounted on the outside of the electronic wire generating device, so that the entire screen cleaning work can be performed on the screen surface and the surface of the electron emission element. Intellectual property of the Ministry of Economic Affairs, employee consumer cooperation, fi printing, heating, electronic wire cleaning, the rear substrate-sidewall assembly and the front substrate 11 are sent to the cooling chamber 103, and are cooled to about 100 ° C, for example. temperature. Next, the rear substrate-side wall assembly and the front substrate 11 are sent to a vapor deposition chamber 104 of a getter film, where a B a film is vapor-deposited on the outside of the screen as a Aerosol. This B a film system can prevent the surface from being polluted by oxygen, carbon, etc., and can maintain the active state. As for the method of forming a deaerator film, it can be performed at a temperature of 50 to 150 ° C by a general vapor deposition method. Next, the rear substrate-side wall assembly and the front substrate 11 which have been opposed to each other are sent to the assembly room 105, where they are sealed to each other by the iridium layer 32. That is, as shown in Figure 7, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 male | ~ 4% of the Ministry of Economic Affairs's smart money (printed by ITFI 484167 A7 B7) 5. Description of the invention ( 21) is that the front substrate with the first heater 1 1 0 a is located in the assembly room 10 5 which is a vacuum tank, and the front substrate 1 1 〇 is disposed, and the upper substrate is disposed relatively inward. The rear substrate fixing jig 1 1 2 in which the second heater 1 1 2 a is hidden. Further, the rear substrate-side wall assembly and the front substrate 11 are supported by the rear substrate fixing jig 1 1 2 and the front substrate misplacement stand 1 respectively. 10, facing each other. In the subsequent sealing process, the assembly chamber 10 is firstly decompressed on the one hand to a vacuum (air pressure) of 10-5 Pa, and on the other hand the heater 1 1 0 a, 1 1 2 a 'At least the joint is heated to 350 t: The following temperature is preferably heated to a temperature range of 60 ° C ~ 3 0 0 ° C. That is, when the assembly room 1 0 When 5 becomes a vacuum degree of 1 〇-5 Pa, the first heater 1 1 〇a The substrate 11 is heated to a temperature of 200 ° C, and the iridium layer 32 is melted or softened into a liquid state. In this state, the rear substrate-side wall assembly that is fixed to the rear substrate fixing jig ii 2 uses the vertical direction. The driving part 1 1 4 lowers the sealing surface of the side wall 18 to the iridium layer 3 2 on the front substrate 11 1. Then, maintaining this state, the iridium layer is assembled in the assembly room 105. 3 2 is slowly cooled until the temperature drops below 50 t, for example, to harden it. In this way, the side wall 18 and the front substrate 11 are sealed by the iridium layer 3 2 to form a vacuum peripheral 10. The vacuum peripheral device 10 formed in this way is cooled to normal temperature in the cooling chamber 106, and then taken out from the unloading chamber 1q7 to the atmosphere. Through the above process, F ED can be completed. Zhang scale is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) ^-I # 1— (Please read the precautions on the back before filling this page) Order 484167 A7 __B7 V. Description of the invention ((Please read the back first (Please fill in this page for the precautions) FED based on the above structure and its manufacturing The method is to seal the front substrate 11 and the rear substrate 12 in a vacuum environment. The dual functions of baking and electronic wire cleaning can be used to fully release the adsorbed gas on the surface of the substrate and degas. The agent film is not oxidized, and a sufficient gettering effect can be obtained. As a result, a FED can be obtained that can maintain a high degree of vacuum and exhibit good light emission characteristics over a long period of time. In addition, the structure (e.g., a thin tube for exhaust) required for exhaustion, which is required for the conventional method, can be omitted, so that a thin F E D having good display characteristics can be efficiently produced. As for the sealing material, since iridium is used, foaming during sealing can be suppressed, and F E D having high airtightness and sealing strength can be obtained. Therefore, even a large image display device of 50 inches or more can easily and reliably perform sealing work. In addition, in the above embodiment, although it is made: only in the sealing surface of the front substrate 1 1 and. The structure in which the iridium layer 32 is formed on one of the sealing surfaces of the side walls 18 is sealed. However, it can also be produced in a cost-effective manner based on the sealing surface of the front substrate 11 and the side walls 18. Ministry of Wisdom Wealth 4 Both of them have a structure in which the iridium layer 32 is sealed. In addition, the sealing surface provided on at least one of the sealing surface of the front substrate 11 or the sealing surface of the side wall 18 may be provided. The upper iridium layer is on the outside of the vacuum processing device, and it is heated to a temperature above the melting point in advance, and then the iridium layer in a molten state is arranged. In this case, the bonding force between the iridium layer and the sealing surface can be strengthened by applying an ultrasonic wave. -25- This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (Furthermore, low melting point metal sealing materials such as iridium or iridium alloy, even in non-melting The state is also very soft (hardness is very low), so you can also set the heating temperature of the joint to a temperature of about 60 ° C to 200 t below the melting point, and then press the side wall 18 of the rear substrate-side wall assembly. On the iridium layer 32, the side wall 18 and the front substrate 11 are sealed together. In addition, in the sealing process, it is also possible to arrange: the rear substrate-side wall assembly is arranged below and above it The front substrate 1 1 is arranged so that the sealing surface is down, and the front substrate is lowered by the up-and-down driving unit, and the side wall and the front substrate are sealed together. Alternatively, one of the front substrate or the rear substrate may be used. One of the peripheral edges is bent, and the two substrates are directly sealed together without intervening through the side wall. As shown in FIG. 8, the entire sealing surface of the front substrate 11 may be included. periphery A groove 19 is formed, and an iridium layer 3 _ 2 as a low-melting metal material is arranged in this groove 19. The cross-sectional shape of the groove 19 can also be formed into an angle, a circle, a semicircle, or a circular arc. As for other Part of the structure and sealing method are the same as those in the first embodiment. According to this structure, when sealing is performed, the iridium 3 2 melted or softened will stay in the groove 19 of the front substrate 11 It is kept in a predetermined position and will not flow out from the trench 19. Therefore, the handling of iridium can be simplified, even for large image display devices of 50 inches or more can be easily and reliably performed. Sealing work. Next, the FED and its manufacturing method according to the second embodiment of the present invention will be described. In addition, the same parts as those in the first embodiment are marked with -26- (Please read the precautions on the back before filling (This page) The paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 484167 A7 _ B7___ V. Description of the invention (j Same drawing number, and its detailed description is omitted. (Please read the notes on the back first) Fill in again (Page) As shown in FIG. 9, according to the second embodiment, the rear substrate 12 and the side wall 18 constituting the vacuum peripheral device 10 are sealed together with a low-melting glass 30 such as transparent glaze glass. In addition, between the front substrate 11 and the side wall 18, a sealing layer 3 3 fused with a base layer 3 1 formed on the sealing surface and an iridium layer 3 2 formed on the base layer is used. Sealed together. The other structures of the FED are the same as in the first embodiment. First, using the same method as in the first embodiment, first prepare: a fluorescent screen 16 and a metal back layer 1 have been formed. 7 is a front substrate 1 1; and a rear substrate 12 is provided with an electron emission element 2 2; and a side wall 18. Next, in the atmosphere, a peripheral portion of the rear substrate 12 on which the electron emission element 22 has been formed is sealed with a rectangular frame-shaped side wall 18 using a low-melting glass 30. At the same time, a plurality of support members 14 are sealed to the rear substrate 12 by using low-melting glass 30 in the atmosphere. Printed by the Ministry of Economic Affairs 4 ^ a (printed by the Industrial and Consumer Cooperative), then the rear substrate 12 and the front substrate 11 are sealed to each other via the sidewall 18. This situation is shown in Figure 10 and Figure 1. As shown in FIG. B, first, a base layer 31 having a predetermined width is formed on the upper surface of the side wall 18 which is to be the sealing surface and the inner peripheral edge portion of the front substrate 11 respectively. In this embodiment, a silver paste is applied to form the base layer 31. Next, on each of the base layers 31, a low-melting metal sealing material iridium is applied to form a continuous layer around the entire base layer. Iridium layer 3 2. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -27- 484167 A7 B7 V. Description of the invention (^ (Please read the precautions on the back before filling this page) This iridium layer The width of 3 2 is formed to be narrower than the width of the base layer 31, and is applied so that the two edges of the iridium layer and the both edges of the base layer 31 are separated by a predetermined gap. For example, if the When the width of the side wall 18 is set to 9 mm, the width of the base layer 31 is formed. 7mm, the width of the iridium layer 32 is about 6mm. In addition, as for the low-melting-point metal sealing material, the iridium (In) monomer may not be used, but silver oxide, silver, gold, Alloys of elements such as copper, aluminum, zinc, tin, etc. For example: if a eutectic alloy containing In97%-Ag3% is used, the melting point can be further reduced by 141 ° C, and the mechanical strength can be improved. In addition, 'base layer 3 1 series Use materials that have good wettability and air tightness to metal sealing materials, that is, materials that have high affinity for metal sealing materials. In addition to the silver paste described above, gold, aluminum, Metal pastes of nickel, cobalt, copper, etc. In addition to metal pastes, the base layer 31 can also be used: silver, gold, brocade, nickel, Ming, copper and other metal plating layers or vapor deposition layers, or glass material layers. Economic The Ministry of Intellectual Property 4¾¾Work Consumer Cooperative Co., Ltd. printed here "The work of filling iridium with the base layer 3 1 formed on the sealing surface" In other words, the coating of iridium is performed using a sealing material described later.塡 device to perform. As shown in Fig. 11, this sealing material filling device is provided with a support table 40 having a flat mounting surface 40a, and on the mounting surface, a flat rectangular plate-like heating is provided. Plate 4 2; Positioning mechanism 4 4 for positioning the sealing compound on the heating plate; Filling head 4 6 for filling the sealing material on the sealing compound; and the filling head can be opposite Into the sealed compound -28- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 public director) 484167 A7 B7 V. Description of the invention (relative moving filling head moving mechanism 48. (please first Read the notes on the back side and fill in this page again) On the hot plate 42 is mounted: as a sealing compound, the rear substrate 12 or the front substrate 11 with the aforementioned side wall 18 is sealed. The heating plate 42 also functions as a heating means for heating the sealed composition placed on the heating plate 42. The positioning mechanism 4 4 is provided with, for example, three fixed positioning claws 50 that can respectively abut two mutually perpendicularly intersecting sides of the front substrate 11 placed on the heating plate 42; It is connected to the other two sides of the front substrate 1 1 and elastically pushes the two pushing claws 52 of the front substrate 11 toward the positioning claw 50. As shown in FIG. 11 and FIG. 12, the filling head 46 is provided with a storage portion 5 4 that stores molten iridium, and a seal that fills the molten iridium from this storage portion to the front substrate 1 1 The nozzle 5 5 of the joint surface; and the ultrasonic vibrator 56 which is fixed to the outer surface of the nozzle 5 5 and functions as an ultrasonic generator. In addition, the filling head 4 6 is connected to a supply pipe 5 8 for supplying cleaning gas, and is provided with a heating section 60 capable of heating the nozzle 55. The Ministry of Economic Affairs ’s smart money 4Φ, M & I consumption and itfi printed charging head moving mechanism 4 8 series as shown in Figure 11 'equipped with: the charging head 4 6 can be supported along the supporting platform 4 The mounting surface 4 0 of 0 is a vertical Z-axis direction, that is, a Z-axis driving robot 6 that is vertically driven in a vertical two-axis direction with respect to the front substrate 11 mounted on the heating plate 4 2. 2; and the γ-axis driving robot 6 which can support the Z-axis driving robot 6 2 to be freely reciprocated along the Y-axis direction parallel to the short side of the front substrate 11 1 described above. The dimensions are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7_ V. Description of the invention (2?) (Please read the notes on the back before filling this page). In addition, the Y-axis driving robot 64 is supported by the X-axis driving robot 64 and the auxiliary rail 67, which are fixed on the mounting surface 40a, so as to be parallel to the long side of the front substrate 11. X axis direction, freely reciprocating driving. When the sealing material filling device is used to apply iridium, as shown in FIG. 11, the sealing surface is faced up, and the front substrate 11 is placed on the heating plate 4 2. The positioning mechanism 44 is positioned at a predetermined position. Next, as shown in FIG. 12, after setting the filling head 4 6 having the iridium in a molten state at a desired filling start position, the filling head moving mechanism 4 8 is used along the front. The sealing surface of the substrate 11 here refers to the base layer 3 1 formed on the front substrate 11 and moves the filling head 46 at a predetermined speed. In addition, while moving the filling head 46, molten iridium is continuously charged on the base layer 31 from the nozzle 55 to form a continuously extending iridium layer 32 on the entire periphery of the base layer 31. In addition, at this time it is also supersonic. The wave vibrator 56 operates and charges the base layer 31 while applying an ultrasonic wave to the molten iridium. Printed here by the Ministry of Economic Affairs, Smart Assets Co., Ltd .. The above-mentioned ultrasonic wave system is applied to the sealing surface of the front substrate 11, that is, for the direction perpendicular to the surface of the base layer 31, and the ultrasonic vibration number system is set. For example: 30 ~ 40KHz. By applying an ultrasonic wave in this way and filling iridium, the wettability of iridium to the sealing surface or the base layer 31 can be improved, and the iridium can be filled into a desired position well. Furthermore, the molten iridium can be continuously charged along the base layer 31, and a continuously extending iridium layer without a segmented notch along the base layer 31 can be formed. In addition, by applying ultrasonic waves, the paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) -30- 484167 A7 B7 V. Description of the invention At that time, a part of the iridium will diffuse into the surface of the base layer 31 to form an alloy layer. (Please read the precautions on the back before filling this page) In addition, during the process of filling iridium, you can borrow The amount of iridium discharged can be controlled by adjusting either the magnitude of the above-mentioned ultrasonic vibration output or the size of the aperture of the nozzle 55 to discharge the iridium, and the thickness and width of the formed iridium layer can be adjusted. For sealing on the sealing surface of the side wall 18 of the rear substrate 12 here, here is the case where the base layer 31 is filled with iridium, similar to the above case, the rear substrate 12 is positioned first. On the heating plate 4 2 of the sealing material filling device, the filling head 4 6 is used to apply ultrasonic waves while continuously filling molten iridium along the base layer 3 1 to follow this base layer 3 1 Continuous formation of continuous iridium Layer 3 2. Next, as shown in FIG. 13, the front substrate 1 1 of which the base layer 3 1 and the iridium layer 3 2 have been formed on the sealing surface; and the intellectual property 1 of the Ministry of Economic Affairs. The industrial and commercial Itri printed board 12 has been sealed with a side wall 18 and a back substrate-side wall assembly of a base layer 31 and an iridium layer 32 has been formed on the upper surface of this side wall 18, so that both In a state where the sealing faces of the two are facing each other, the two are held in a state of facing each other by a predetermined distance using a jig, and then moved into the aforementioned vacuum processing apparatus 100. Then, as in the first embodiment, the vacuum In the baking and electronic wire cleaning chamber 10 of the processing device 100, when the vacuum reaches a high degree of vacuum of 10 to 5 Pa, the front substrate 11 and the rear substrate-side wall assembly are heated to about Bake at a temperature of 300 t, so that the gas adsorbed on the surface of each component is fully released. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 31-484167 A7 B7 V. Description of the invention (At this temperature, the iridium layer (melting point about 156 ° C) 3 2 will melt (please read the precautions on the back before filling out this page). However, because the iridium layer 3 2 is formed on the substrate layer 3 1 with higher affinity, iridium will not It keeps flowing on the base layer 3 1 and prevents it from flowing out to the electron emitting element 2 2 side, or the back side of the substrate 12 or the screen 16 side. After heating and cleaning the electron wire, the back side The substrate-side wall assembly and the front substrate 11 are cooled in a cooling chamber 103 until the temperature drops to, for example, about 100 ° C. Next, in a vapor deposition chamber 104, a B a film, which is used as a getter film, is vapor-deposited on the outside of the fluorescent screen 16. Secondly, the rear substrate-side wall assembly and the front substrate 11 are sent to the assembly chamber 105, where they are heated to 200 ° C, so that the iridium layer 32 is melted into a liquid state or softened again. In this state, after the front substrate 11 and the side wall 18 are joined and pressurized with a predetermined pressure, the iridium is slowly cooled and hardened. borrow. Therefore, the front substrate 11 and the side wall 18 can be sealed and integrated by using a sealing layer 32 that fuses the iridium layer 32 and the base layer 31 to form a vacuum peripheral device 10. The Ministry of Economic Affairs, Intellectual Property, Industry, Consumers, and Industrial Cooperation, said that the vacuum peripherals 10 formed in this way were cooled to room temperature in the cooling chamber 106 and then removed from the unloading chamber 107. After the above process, F ED can be completed. According to the above structured FED and its manufacturing method, since the sealing work of the front substrate 11 and the rear substrate 12 is performed in a vacuum gas phase environment, the surface of the substrate can be adsorbed by using baking and electronic wire cleaning. The released gas is fully released, and the deaerator film is not oxidized. The size of this paper applies the Chinese National Standard (CNS) A4 (210X29 * 7 mm) -32- 484167 A7 B7 V. Description of the invention (3 () A sufficient gettering effect can be obtained. In this way, a FED capable of maintaining a high degree of vacuum can be obtained. In addition, by using iridium as a sealing material, foaming during sealing can be suppressed, and high airtightness can be obtained. And FED with high sealing strength. At the same time, by providing a base layer 3 1 under the iridium layer 32, during the sealing process, even when the iridium layer 32 is melted, the iridium can be prevented from flowing out, And keep it in a predetermined position. Therefore, the handling of iridium is simpler, and even for large-scale image display devices of 50 inches or more, the sealing work can be easily and reliably performed. In addition, by applying ultra sound Filling one side with iridium can improve the wettability of iridium to the sealing surface or the base layer 31. Even when iridium is used as the metal sealing material, iridium can be filled in the desired position well. In addition, it can be filled with iridium. The molten iridium is continuously charged along the base layer 31, so that the iridium layer 3 2 without interruption can be formed along the base layer 31. In addition, when the base layer 31 is used in the manner shown in this embodiment Next, the supersonic wave is applied to fill the molten iridium, so when the filling is completed, a part of the iridium will diffuse into the surface portion of the base layer 31 to form an alloy layer. Therefore, when sealing In this case, even when iridium is melted, the flow of iridium can be prevented more reliably, and it can be kept at a predetermined position. From the above description, it can be seen that the disposal of metal sealing materials can be easier, and the vacuum can be obtained. A method of manufacturing an image display device capable of easily and surely performing a sealing operation in a gas phase environment. In addition, in the second embodiment described above, although the sealing surface of the front substrate 11 and the side wall 18 are used Sealing surface Both sides have formed the base-33- (Please read the notes on the back before filling in this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public director) 484167 A7 B7 V. Description of the invention (31) Bottom layer 3 1 and the iridium layer 3 2 are sealed in a state of being sealed. However, it is also possible to use only one of the sealing faces, for example, as shown in FIG. 14, only the sealing of the front substrate 11 The surface is sealed with the base layer 31 and the iridium layer 32 in a state of being sealed. In addition, as shown in the first embodiment, the sealing surface is directly on the substrate or the side wall without using the base layer. In the case where the iridium filling layer is carried out, the above-mentioned sealing material filling device can also be used to fill iridium while applying an ultrasonic wave. Thereby, the wettability of the sealing surface with iridium can be improved, and the iridium can be continuously charged to a desired position. In addition, in the second embodiment, it is also possible to seal the rear substrate 12 and the side wall 18 with the same sealing layer 33 as the base layer 31 and the iridium layer 32 fused to each other as described above. . Alternatively, it is also possible to adopt a structure in which one of the front substrate or the rear substrate is bent at the peripheral edge portion, and the two substrates are directly sealed together without a sidewall interposed therebetween. In addition, although the width of the iridium layer 32 is formed to be narrower than the width of the base layer 31 throughout the entire circumference, as long as the width of the iridium layer 32 is at least part of the base layer 31, If it is set smaller than the width of the base layer, the flow of iridium can be prevented. Next, the F E D and its manufacturing method according to the third embodiment of the present invention will be described. In addition, the same portions as those in the first embodiment described above are denoted by the same reference numerals, and detailed descriptions thereof are omitted. First, in the same manner as in the first embodiment, the following are prepared in advance: a front substrate 1 1 on which a fluorescent screen 16 and a metal back layer 17 have been formed: and a rear substrate 1 on which an electron emission element 2 2 is provided. 2; and side-34- (please read the precautions on the back before filling this page) This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (g (Please read first Note on the back side, please fill in this page again) Wall 18 ° Next, the peripheral edge of the rear substrate 12 where the electron emission element 2 2 has been formed and the rectangular frame-shaped side wall 18 are located in the atmospheric gas phase environment. The low-melting glass 30 is used to seal each other. At the same time, in the atmospheric gas phase environment, the low-melting glass 30 is used to seal a plurality of supporting members 1 4 on the rear substrate 12. Then, the rear substrate 1 2 is sealed. It is sealed to the front substrate 11 via the side wall 18 through this side. In this case, as shown in FIG. 16A, FIG. 16B and FIG. The sealing surface 1 1 a on the substrate 1 1 side, that is, the front substrate 1 The inner peripheral edge portion of 1 forms a base layer 31 along its entire periphery. This sealing surface 1 1 a is formed to be the sealing surface 1 8 a which is to be the second substrate 12 side, that is, the upper side of the side wall 18 The rectangular frame shape corresponding to the surface extends continuously along the peripheral edge portion of the inner surface of the front substrate 1 1. The sealing surface 1 1 a has two linear portions and four corner portions facing each other, and is formed. It is almost the same size and width as the upper surface of the side wall 18. The Ministry of Economic Affairs ’Smart Assets 4 ^ 7a: Industrial and Commercial Cooperatives’ Printing In addition, the width of the base layer 31 is slightly smaller than the width of the sealing surface 11a. In this embodiment, a silver paste is applied to form the base layer 31. Next, on the base layer 31, iridium is applied as a metal sealing material so as to form a continuous pattern around the entire periphery of the base layer 31. The notched iridium layer 3 2. At this time, the portion of the iridium layer 32 that extends along each straight portion of the sealing surface 1 1 a is formed: a plurality of acute-angled bent portions 3 2 a are formed at a predetermined pitch. The structure pattern of the reinforcing pillar structure is continuously arranged. In addition, the iridium layer 3 2 is formed A certain width, the result will change the paper wave scale to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 ____B7 _ V. Description of the invention (formed on the sides of the iridium layer 32 has many bends The state of the folded part. In addition, the iridium layer 3 2 is coated within the width of the base layer 31. (Please read the precautions on the back before filling this page) The metal sealing material and the base layer can be implemented in the same manner as described above. Next, as shown in FIG. 18, the front substrate 1 1 on which the base layer 3 1 and the iridium layer 3 2 have been formed on the sealing surface 1 1 a; 1 2 The rear substrate-side wall assembly in which the side wall 1 8 is sealed is in a state where the sealing surfaces 1 1 a and 1 8 a face each other and is held in a facing state separated by a predetermined distance by a jig or the like , Move to the aforementioned vacuum peripheral 10. Then, as in the first embodiment, when the vacuum degree reaches a high degree of vacuum of about 10-5 Pa in the baking / electronic wire cleaning chamber 100 of the vacuum processing apparatus 100, the front substrate 11 is The substrate-side wall assembly is heated to a temperature of about 300 ° C and baked, so that the gas adsorbed on the surface of each member is sufficiently released. Ministry of Economic Affairs, Intellectual Property Tips, Industrial and Consumer Cooperation, Fi Disaster At this temperature, the iridium layer (melting point is about 156 ° C) 3 2 will melt. However, the iridium layer 32 here is formed in a pattern having many bent portions 3 2 a, and the flow of iridium can be suppressed even when it is melted. At the same time, the iridium layer 32 is formed on the high-affinity base layer 31, so the molten iridium does not flow and remains on the base layer 31, which can prevent it from flowing out to the side of the electron emission element 22, Or the back of the substrate 1 2 outside, or the screen of the 16 side. After heating and electronic wire cleaning, the rear substrate-sidewall assembly and the front substrate 11 are cooled in a cooling chamber 103 until the temperature -36- This paper is in accordance with China National Standard (CNS) A4 specifications ( 210X297 mm) 484167 A7 ___B7____ 5. Description of the invention ((Please read the precautions on the back before filling out this page) The temperature will be reduced to, for example, about 100 ° C. Next, it will be used as degassing in the evaporation chamber 104 The B a film used for the adhesive film is formed on the outer side of the screen 16. Next, the rear substrate-side wall assembly and the front substrate 11 are sent to the assembly room 105, where they are heated to 200 °. C, so that the iridium layer 32 is melted again into a liquid state or softened. Here, too, as described above, the iridium layer 32 is formed into a pattern having many bent portions 3 2 a and is formed in a high affinity On the base layer 31, the molten iridium does not flow and remains on the base layer 31. In this state, after the front substrate 11 and the side wall 18 are joined and pressurized with a predetermined pressure, Then slowly cool and harden the iridium. The surface substrate 11 and the side wall 18 can be sealed together by using a sealing layer 3 2 formed by fusing the iridium layer 3 2 and the base layer 31 to form a vacuum peripheral device 10. The vacuum formed in this way The peripheral device 10 is cooled to room temperature in the cooling room 106 and taken out from the unloading room 107. After the above process, the F ED can be completed. Li Wang printed the FED and its manufacturing method based on the above structure, because the sealing work of the front substrate 11 and the rear substrate 12 is performed in a vacuum gas phase environment, and the substrate can be made by baking and electronic wire cleaning. The gas adsorbed on the surface is sufficiently released, and the getter film is not oxidized, so that a sufficient gettering effect can be obtained. In this way, a FED capable of maintaining a high degree of vacuum can be obtained. In addition, by using iridium As a sealing material, foaming during sealing can be suppressed, and FED with high airtightness and high sealing strength can be obtained. In addition, the Chinese national standard (CNS) A4 specification (210X297 mm) is applied to this paper size- 37- 484167 A7 _B7 V. Description of the invention (Please read the precautions on the back before filling in this page.) The iridium layer 3 2 set on the sealing surface is formed into a pattern with many bends 3 2 a. Therefore, even during the sealing process, even iridium It can also prevent the outflow of iridium when it is melted, and can keep it at a predetermined position. Therefore, the disposal of iridium is simpler, even for large-scale image display devices of 50 inches or more. In addition, according to this embodiment, the iridium layer 32 is formed on the high-affinity base layer 31. Therefore, even when the iridium is melted during the sealing process, it can be more reliably By preventing the outflow of iridium, easy and reliable sealing can be achieved. In addition, in the above-mentioned embodiment, although the iridium layer 3 2 is adopted, it has a structure including a plurality of bent portions in the entire length of a portion extending along each linear portion of the sealing surface 1 1 a. When at least one of the linearly extending portions of the sealing surface 1 1 a has a bent portion or a bent portion, the effect of suppressing the flow of molten iridium can be obtained in the same manner as in the embodiment described above. In addition, the pattern shape of the iridium layer 32 is not limited to the shape of the reinforcing pillar structure, and the same effect can be obtained even if the shapes shown in FIGS. 19A to 19D are adopted. That is, even if the iridium layer 3 2 adopts: a zigzag pattern in which the angle 0 of the bent portion 32 shown in FIG. 19 is an acute angle; or the bent portion with a nearly right angle shown in FIG. 19B A continuous crank-shaped pattern of 3 2 or a continuous pattern having a nearly triangular shape as shown in FIG. 19C. In addition, the shape of the pattern of the iridium layer 32 is not limited to the combination of the bent portions. As shown in FIG. 19D, a wavy pattern with many curved portions 3 2 b or a combination of bent portions may be used. Folded and curved paper sizes are applicable; National Standard (CNS) A4 size (210X297 public director) ~-484167 A7 B7 V. Description of the invention (^ The pattern formed by the curved part. (Please read the precautions on the back first) (Please fill in this page again) In the above-mentioned embodiment and various modifications, although the iridium layer 3 2 is set to a shape having a certain width, it extends along a straight portion of the sealing surface 1 1 a Among the parts, it can also be made into places with different widths and formed with concave and convex shapes on the edges. For example, it can be separated from each other and alternately arranged along the long axis direction of the iridium layer 32 as shown in Figure 20A The rectangular convex portion 40 shown in FIG. 20C or the arc-shaped convex portion 4 1 shown in FIG. 20B and FIG. 20D can be as shown in FIG. As shown in FIGS. A and 20B, the convex portions 40 and 4 1 provided on one of the side edges of the iridium layer 32 are opposite to The convex portions 40 and 4 1 on the other side edge are arranged so as to overlap each other with respect to the major axis direction of the iridium layer, or the convex portions may be arranged as shown in FIGS. 20C and 20D. 40 and 41 are arranged in a staggered arrangement with respect to the major axis direction of the iridium layer. Printed by the Ministry of Economic Affairs, Intellectual Property, 4 ^ 8, Industrial and Consumer Affairs Co., Ltd. Even if the iridium layer 3 2 is used, the flow when the iridium is melted can be suppressed. In addition, the shape of the convex portion is not limited to a rectangular shape or an arc shape, and can also be arbitrarily selected. In addition, if the convex portion is provided on at least one of the side edges of the iridium layer 32, iridium suppression can be obtained. In addition, in the third embodiment described above, although a structure in which a base layer is formed on the sealing surface and an iridium layer is formed on the base layer is adopted, it is also possible to use a structure in which the base layer is not directly used. The structure on the sealing surface is filled with an iridium layer. Even in this case, the iridium layer can be provided with the aforementioned bent portion or curved portion, or the shape of the side edge can be made to have unevenness, thereby suppressing -39- This paper size applies to China National Standard (CNS) A4 (210X297 mm) 484167 A7 B7 V. Description of the invention (The flow of iridium is produced to obtain the same effect as the previous embodiment. In addition, as shown in the second embodiment, an ultrasonic wave can be applied on one side. One side is coated with iridium. In the third embodiment described above, sealing is performed in a state where the base layer 3 1 and the iridium layer 3 2 are formed only on the sealing surface 1 1 a of the front substrate 11. Structure, but it can also be used: the sealing surface 1 8 a only on the side wall 18, or as shown in FIG. 21, the sealing surface 1 1 a and the front substrate 11 Both sides of the sealing surface 18 a of the side wall 18 have a structure in which the sealing operation is performed in a state of the base layer 31 and the iridium layer 32. In addition, the present invention is not limited to the embodiments described above, and various modifications are possible as long as they are within the scope of the invention. For example, it is also feasible to seal between the rear substrate and the side wall by using the same sealing layer formed by fusing the base layer 3 1 and the iridium layer 3 2 as described above. Alternatively, one of the front substrate and the rear substrate may be bent at its peripheral edge, and the two substrates may be directly sealed together without intervening through the sidewall. In addition, in the above embodiments, although an electric field emitting type electron emitting element is used as the electron emitting element, it is not limited to this, and a ρ η type cold cathode element may also be used; a surface conduction type electron Emission element; other types of electron emission element such as microchip type electron emission element. The present invention is also applicable to other types of image display devices such as plasma display panels (PDP) and electroluminescence (EL). [Brief Description of Drawings] FIG. 1 is a perspective view of F E D according to an embodiment of the present invention. -40- (Please read the notes on the back before filling in this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 V. Description of the invention (Figure 2 is along Figure 1 A cross-sectional view of the line Π-Π in Figure 3. Figure 3 is a plan view of the above-mentioned F ED screen. (Please read the precautions on the back before filling out this page.) Figure 4 is the vacuum periphery forming the FED. A perspective view showing a state where an iridium layer is formed on the sealing surface of the front substrate of the device. FIG. 5 is a perspective view showing a state where the front substrate and the rear substrate-side wall assembly having the above-mentioned iridium layer formed on the cover portion are arranged opposite to each other. 〇 FIG. 6 is a schematic view of a vacuum processing device used for manufacturing the FED. FIG. 7 is a cross-sectional view of an assembly room of the vacuum processing device. FIG. 8 is an iridium layer provided on a groove on a sealing surface of a front substrate. Fig. 9 is a perspective view of a FED according to a second embodiment of the present invention. Fig. 10A is a view showing a base layer and an iridium layer formed on a sealing surface of a side wall constituting the FED vacuum peripheral device. Perspective view of state Figure 10B is a perspective view showing a state in which a base layer and an iridium layer are formed on the sealing surface of the front substrate constituting the above-mentioned FED vacuum peripheral device. Intellectual Property of the Ministry of Economic Affairs ^ 8 Gonghehehe Printing Co., Ltd. Printed 1 1 FIG. 12 is a perspective view showing a sealing material filling device according to an embodiment of the present invention. FIG. 12 is a perspective view showing a process of filling the sealing surface of the front substrate with iridium by using the sealing material filling device. The figure is a cross-sectional view showing a state in which the side wall assembly of the rear substrate and the front substrate on which the base layer and the iridium layer are formed in the sealing portion are disposed opposite to each other. (210X297 public director) ~ 484167 A7 _____B7 _ V. Description of the invention (^ (Please read the notes on the back before filling out this page) Figures 1 and 4 show the FED vacuum peripherals forming the modification of the second embodiment. In the process, a cross-sectional view of a state where a base layer and an iridium layer are formed on the sealing surface of the front substrate. FIG. 15 is a cross-sectional view showing a FED according to a third embodiment of the present invention. Shown in the composition above Sealing the front substrate f E D of the vacuum envelope of Example III. A plan view of a state where a base layer and an iridium layer are formed on a surface. Fig. 16B is a plan view showing an enlarged circuit pattern of the iridium layer. Fig. 17 is a perspective view showing a state where a base layer and an iridium layer are formed on the sealing surface of the front substrate. Fig. 18 is a cross-sectional view showing a state in which the front substrate and the rear-side assembly are arranged opposite to each other after the base layer and the iridium layer are formed in the sealing portion. 19A to 19D are plan views each showing a modified example of the circuit pattern of the iridium layer provided in the sealing portion. 20A to 20D are plan views each showing another modification of the circuit pattern of the iridium layer provided in the sealing portion. Fig. 21 is a cross-sectional view showing a state where a base layer and an iridium layer are formed on a sealing surface of a front substrate in the process of forming an F E D vacuum peripheral device according to another embodiment of the present invention. [Illustration of drawing number] This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -42- 484167 Ministry of Economic Affairs Smart Money / i ^ a (Printed by Industrial and Consumer Cooperatives A7 B7 V. Invention Description (j 1〇 : Vacuum peripheral 1 1: Front substrate 1 1 a: Sealing surface 1 2: Rear substrate 1 4: Support member 1 6: Screen 1 7: Metal back layer 1 8: Side wall 1 8 a: Sealing surface 1 9: trench 2 0: black light absorbing part 2 2: electron emitting element 2 4: conductive anode layer 2 5: hole 2 6: silicon dioxide film 2 8: gate electrode 3 0: low melting point glass; transparent glaze glass 3 1: Base layer 3 2: Iridium layer 3 2 a: Bend portion 3 2 b: Bend portion 4 0, 4 1: Convex portion 4 0 a: Mounting surface 4 2: Heating plate (Please read the notes on the back first Please fill in this page again for this matter) This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -43- 484167 A7 B7 Five 'invention description (41) 4 4: positioning mechanism 4 6: filling head 4 8: Charging head moving mechanism 5 0: Positioning claw 5 2: Pushing claw 5 4: Reservoir 5 5: Nozzle 5 8: Supply pipe 6 0: Heater 6 2: Z-axis driving robot 6 4: Y-axis driving robot 66: X axis drive Mobile robot 6 7: Auxiliary track 1 0 0: Vacuum processing device 1 0 1: Loading room 1 0 2: Baking and electronic wire cleaning room 1 0 3: Cooling room 1 0 4: Degassing film deposition chamber 1 0 5: Assembly room 1 6: Cooling room 1 0 7: Unloading room 110: Front substrate setting table 1 10a: Heater 112: Rear substrate fixing jig -44- (Please read the precautions on the back first (Fill in this page) This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) 484167 A7 B7 Five invention descriptions (j machine dynamic heat drive added to the second side): a · · 2 4 (please first (Read the notes on the back and fill out this page) ¢. £ α < i This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) -45-