TW473949B - Solid-state image sensing device and method of manufacturing the same - Google Patents

Solid-state image sensing device and method of manufacturing the same Download PDF

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Publication number
TW473949B
TW473949B TW089115032A TW89115032A TW473949B TW 473949 B TW473949 B TW 473949B TW 089115032 A TW089115032 A TW 089115032A TW 89115032 A TW89115032 A TW 89115032A TW 473949 B TW473949 B TW 473949B
Authority
TW
Taiwan
Prior art keywords
solid
state image
image sensing
transparent substrate
wiring pattern
Prior art date
Application number
TW089115032A
Other languages
Chinese (zh)
Inventor
Keiji Sasano
Original Assignee
Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of TW473949B publication Critical patent/TW473949B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent

Abstract

The purpose of the present invention is to reduce the number of processes which are needed for forming a wiring pattern and the processing time for the pattern and the number of failed electrical connection part between the transparent substrate and the solid-state image sensing element. This solid-state image sensing device comprises a solid-state image sensing element with a bump formed on an electrode pad, and a transparent substrate having a wiring pattern formed of a conductive paste. In this case, the bump is connected with the pattern formed of the conductive paste to electrically bond the transparent substrate with the element.

Description

473949 A7 B7 五、發明說明(1 ) 〔發明背景〕 發明領域 本發明關於固態影像感測裝置,例如電荷耦合裝置( c C D )感測器或類似物,以及其製造方法。 相關技術說明 影像輸入裝置(如掃猫器、傳真及視頻攝影機)、固 態影像感測裝置,例如c C D線性感測器和c C D區域感 測器爲常用者。此外,近年來採用俗稱C〇G ( Chip〇n Glass )之安裝系統做爲固態影像感測裝置製造方法,以因 應電子零件小尺寸及更薄結構要求。 經濟部智慧財產局員工消費合作社印製 ---------Ί--Ί#· — I (請先閱讀背面之注意事項再填寫本頁) --線- 在俗稱C 0 G的安裝系統中,形成一紋路(由導電材 料形成)之透明基板與具有一凸起之固態影像感測元件電 耦合,且透明棊板和固態影像感測元件以一黏劑固定。此 外,透明基板和固態影像感測元件之間的電耦合是利用形 成在透明基板上的接線紋路與在固態影像感測元件測內的 凸起之間的加壓接觸,在加壓接觸狀態,透明基板和固態 影像感測元件的機械連結係利用在基板與元件之間提供樹 脂(黏劑)。 然而,在相關技術中的固態影像感測裝置製造方法中 ,在透明基板上形成一接線紋路時,先利用真空蒸發法或 濺射法在透明基板整個表面形成一層鋁或類似物之金屬膜 ,且在金屬膜上形成一氧化銦膜(防止氧化)之後,利用 模罩及蝕刻程序形成紋路。因此紋路之形成需很多步驟和 本g尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ' -4 - 473949 A7 __B7 ___ 五、發明說明(2 ) 較長時間,且造成透明基板材料成本增加,此外,固態影 像感測裝置的總成本亦增加。 (請先閲讀背面之注意事項再填寫本頁) 此外,由上述相關技術方法所得之固態影像感測元件 ,接線紋路厚度最多約爲1 // m,且紋路本身很硬。因此 ,若固態影像感測元件測的凸起高度變動,無法經由各凸 起對接線紋路均勻加壓。因此在透明基板和固態影像感測 元件的電子接合處有殘餘應力,恐有無法連接之虞。因此 '在相關技術中,在固態影像感測元件側形成凸起後,進行 齊平程序使凸起高度對齊。此外,在用於線路感測器的固 態影像感測元件中,元件呈窄長形,寬度爲0 . 3〜 2 . Omm,長度爲20〜100 mm。因此元件本身可 能由於覆蓋吸光區的上層(有機層)與元件之間的熱膨脹 差異而變曲突出。所以,即使經由上述齊平程序使凸起高 度對齊,也很難確保不會產生連接失敗。 〔發明槪述〕 經濟部智慧財產局員工消費合作社印製 本發明的固態影像感測裝置包括具有在電極墊上的凸 起之一個固態影像感測元件,以及包括利用導電膠形成的 接線紋路之一塊透明基板,透明基板與固態影像感測元件 係藉由將凸起與由導電膠形成的接線紋路電子連結而耦合 〇 依據此固態影像感測裝置,由於透明基板上的接線紋 路是用導電膠形成,在製造程序中的紋路成型時,能藉由 減少所需步驟及處理時間而降低透明基板之材料成本。此 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -5- 473949 A7 B7 五、發明說明(3 ) (請先閱讀背面之注意事項再填寫本頁) 外,由於導電膠比凸起(金屬突出)柔軟,且確保更簡單 的厚膜成型,在凸起加壓接觸期間,不可能吸收因凸起的 高度變動和固態影像感測元件扭曲而在接線紋路側產生的 壓力變動。 此外,本發明之固態影像感測裝置製造方法步驟包括 利用導電膠在一透明基板上形成接線紋路,在固態影像感 測元件的電極墊上形成凸起,以及將透明基板與固態影像 感測元件耦合,同時在接線紋路與凸起之間形成位置對齊 〇 依據此固態影像感測裝置製造方法,由於係以導電膠 在透明基板上形成接線紋路,其能藉由減少形成紋路所需 步驟和處理時間來降低透明基板之成本。此外,由於導電 膠比凸起(金屬突出)柔軟,而且厚膜形成較易,當透明 基板與固態影像感測元件加壓接觸時,其能吸收因凸起的 高度變動和固態影像感測元件而在接線紋路側產生的壓力 變動。 經濟部智慧財產局員工消費合作社印製 〔圖式簡介〕 圖1 A至1 D爲本發明固態影像感測裝置-較佳實施 例結構圖。 圖2 A至2 D爲本發明固態影像感測裝置製造方法第 一部分-較佳實施例槪示圖。 圖3 A至3 B爲本發明固態影像感測裝置製造方法第 二部分-較佳實施例槪示圖。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -6 - 473949 A7 B7 五、發明說明(4 ) 圖4 A至4 B爲本發明其他應用例槪示圖。 主要元件對照表 1 固態影像感測裝置 2 透明基板 3 固態影像感測元件 4 接線紋路 4 A 一端部 4 B 另一端部 5 吸光區 6 電極墊 7 凸起 8 透明樹脂 9 撓性基板 10 接線紋路 1 0 A 端部 12 樹脂 11 導電膜 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 〔較佳實施例詳述〕 以下將參照所附圖示詳細解釋本發明較佳實施例。 圖1 A至1 D爲本發明固態影像感測裝置一較佳實施 例結構圖,圖1 A爲平面圖;圖1 B爲側視圖;圖1 C爲 部位P之放大圖;圖1 D爲部位J之放大圖。在固態影像 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 473949 A7 B7 五、發明說明(5) 感測裝置1中,一固態影像感測元件3裝在做爲低座的透 明基板2上來承載晶片。 透明基板2是由光學玻璃或類似物形成’從平面圖觀 之爲方形。透明基板2的主表面上形成多個接線紋路4 ’ 爲接線紋路4之一端部4 A在對應固態影像感測元件3的 電極佈局之兀件安裝區內’另一端部4 B則位於到透明基 板2 —側區有一預定節距之處,接線紋路4位於端部4 A 和4 B之間的佈局中。 固態影像感測元件3爲方形(從平面觀之)以構成例 如C C D區域感測器的晶片。固態影像感測元件2主表面 幾近中央處形成一吸光區5,此外,在固態影像感測元件 3主表面上於吸光區5外側形成多個電極墊6 (鋁墊或類 似物,另外各電極墊6上形成一凸起7。 此外,透明基板2的元件安裝區包覆透明樹脂8,其 係位於透明基板2與固態影像感測元件3之間的間隙區, 因而將基板2和元件3機械連結。另外,設在固態影像感 測區3的凸起7係連結到透明基板2接線紋路4 一端部 4A,因而將基板2和元件3電子連結。 另一方面,透明基板2 —側設有一撓性基板9,撓性 基板9上形成多個接線紋路1 0,其節距與接線紋路4另 一端部4 B相同。透明基板2和撓性基板9利用相對接線 紋路4、 1 0端部4 B、 1 Ο A之熱加壓澱積(經由各向 異性導電膜1 1或各向異性導電樹脂)而機械連結和電子 連結。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) -線- 經濟部智慧財產局員工消費合作社印製 -8 - 473949 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(6) 在此,本實施例之固態影像感測元件1主要特徵在於 透明基板2上的接線紋路佈局係由導電膠形成,導電膠之 取得係將細金屬粉和樹脂揉入膠中。藉由導電膠形成紋路 ,接線紋路4的厚度可達1 0 // m或更大。 舉例言之,導電膠材料方面,以銀膠爲佳,因從成本 考量以銀做細金屬粉爲較佳,然而,亦可用使用金之金膠 ,利用將鈀和鉑加入銀或金的貴金屬膠,或使用銅或鎳的 賤金屬膠。此外,揉入細金屬粉的樹脂材料可使用任何熱 固性樹脂或熱塑性樹脂。 接著介紹製造上述構造的固態影像感測裝置1之方法 〇 首先製備加工到預定尺寸之一塊透明基板2,之後將 之固定在一網板印刷機上,接著,將網板模罩放在透明基 板2上後,利用一橡膠輥軸將塗在網板模罩上的導電膠經 由網板模罩之孔移轉到透明基板2表面。因此,利用導電 膠一次在透明基板上形成接線紋路4,其形狀對應網板模 罩孔形狀,如圖2 A所示。 此時,形成在透明基板2上的接線紋路4厚度t可爲 1 〇 //m或更大,較佳爲3 0 或更大,如圖2 B所示 ,其可藉由適當設定印刷狀況,例如透明基板2與網板模 罩之間隙和模罩厚度。此外,在形成接線紋路4之後(網 板印刷之後),利用熱處理使導電膠適當硬化。 另一方面,至於固態影像感測元件3,如圖3 A所示 ,在元件周圍區域的各電極墊6上形成一凸起7,其可利 (請先閱讀背面之注意事項再填寫本頁) 丨裝 ·. .線· 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -9 - 473949 A7 B7 五、發明說明(7) (請先閱讀背面之注意事項再填寫本頁) 用例如熱加壓澱積在電極墊6上的金線端部形成一球,如 圖3 B所示,所使用的接線工具可爲毛細,之後切換金線 留下球部。如上形成的凸起一般稱爲球凸。 接著,形成紋路的透明基板2和形成凸起的固態影像 感測元件3彼此對置,而且二者加壓接觸,各接線紋路4 的一端部4 A (參閱圖1 )和對應的凸起7位置對齊,藉 此將一凸起7壓至接線紋路4 一端部4 A。 此時,由於凸起7由金屬材料形成(此例中爲金), 而且接線紋路4由比金軟的導電膠形成,在凸起7和接線 紋路4加壓時,接線紋路4 一端部4 A變形進入一凹區。 此外,由於接線紋路4厚度爲1 0 // m以上,即使凸起7 高度有變動且固態影像感測元件3扭曲,對凸起加壓接觸 時的凸起7之間之總成壓力變動在接線紋路4側被吸收。 因此,凸起7接到各接線紋路4 一端部4 A,且透明基板 2與固態影像感測元件3電子連結。 經濟部智慧財產局員工消費合作社印製 接著,當透明基板2與固態影像感測元件3保持在加 壓接觸狀態時,將紫外線固定型或熱固性透明樹脂8加入 基板與元件之間,之後以紫外線照射或熱處理使透明樹脂 8硬化。透明基板2與固態影像感測元件3利用透明樹脂 8因而機械地連結,此外,基板與元件之電子連結部(接 線紋路4和凸起7的連結部)被透明樹脂8固定。亦可在 以透朋樹脂8包覆透明基板2元件安裝區並使樹脂硬化後 將接線紋路4和凸起7連結。 之後,在透明基板2 —側區層化一撓性層9,同時在 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -10- 473949 A7 B7 五、發明說明(8 ) (請先閲讀背面之注意事項再填寫本頁) 透明基板2側內接線紋路4另一端部4 B位置對齊在撓性 基板9側內的接線紋路4端部1 0 A,這些經由各向異性 導電膜1 1熱壓接觸。透明基板2和撓性基板9因而電子 連結及機械連結,因而可得圖1中所示之固態影像感測裝 置1。 在此實施例中,由於利用網板印刷法將導電膠移轉而 在透明基板2上形成接線紋路4,與相關技術方法相較之 下,形成紋路之處理步驟數目減少,所需處理時間亦大幅 縮短。更實際言之,形成紋路的步驟數目減至只有兩個: 包覆導電膠及使導電膠硬化,形成紋路的時間縮短1 0分 鐘以上。因此,形成紋路之成本可大幅降低,透明基板2 的材料成本亦可大幅減少。 經濟部智慧財產局員工消費合作社印製 此外,由於利用較易形成較厚膜的導電膠來形成接線 紋路4 A,若凸起7高度變動很大或固態影像感測元件3 扭曲,在均勻壓力狀況下,各凸起7可連接到接線紋路4 一端部4 A,因而可有效防止因凸起7高度變動及固態影 像感測元件3扭曲所引起之失敗連結,此外,亦不再需要 使凸起高度均一對齊之齊平步驟。在上述實施例中利用網 板印刷法以導電膠在透明基板2上形成接線紋路4,但亦 可利用例如分配法或冲壓法以及上述方法。 在上述實施例中,透明樹脂塡於透明基板2與固態影 像感測元件3之間的間隙而將二者機械連結,但本發明不 限於此。例如,如圖4所示,本發明另適用例中僅有固態 影像感測元件3周圍部分包覆紫外線固定型或熱固性樹脂 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -11 - 473949 A7 B7 五、發明說明(g) 1 2,未包覆固態影像感測元件3吸光區5,再以紫外線 照射或熱處理使樹脂1 2硬化,以將透明基板2和固態影 像感測元件3機械連結。 依據本發明之固態影像感測裝置及其製造方法,由於 接線紋路是利用導電膠在做爲基部的透明基板上,可藉由 節省處理步驟數目及縮短紋路形成時間來降低透明基板的 材料成本,因此,可降低固態影像感測裝置之成本。此外 ’即使凸起高度變動或固態影像感測元件扭曲,在加壓凸 起之際所產生的壓力變動可在接線紋路側被吸收,如此可 防止連結失敗且可改善固態影像感測裝置之可靠度。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -12-473949 A7 B7 V. Description of the Invention (1) [Background of the Invention] Field of the Invention The present invention relates to a solid-state image sensing device, such as a charge-coupled device (c C D) sensor or the like, and a method for manufacturing the same. Relevant technical descriptions Image input devices (such as cat sweepers, fax and video cameras), solid-state image sensing devices, such as c C D line sensor and c C D area sensor are commonly used. In addition, in recent years, a mounting system commonly known as COG (Chip On Glass) has been adopted as a method for manufacturing solid-state image sensing devices to meet the requirements of small size and thinner structure of electronic parts. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs --------- Ί--Ί # · — I (Please read the precautions on the back before filling out this page)-Line-In the commonly known as C 0 G In the installation system, a transparent substrate (which is formed of a conductive material) forming a texture is electrically coupled with a solid-state image sensing element having a protrusion, and the transparent mask and the solid-state image sensing element are fixed with an adhesive. In addition, the electrical coupling between the transparent substrate and the solid-state image sensing element uses a pressurized contact between a wiring pattern formed on the transparent substrate and a protrusion within the solid-state image sensing element. The mechanical connection between the transparent substrate and the solid-state image sensing device uses a resin (adhesive) provided between the substrate and the device. However, in the manufacturing method of the solid-state image sensing device in the related art, when forming a wiring pattern on a transparent substrate, a vacuum evaporation method or a sputtering method is first used to form a layer of aluminum or the like on the entire surface of the transparent substrate. After forming an indium oxide film on the metal film (to prevent oxidation), a pattern is formed by using a mask and an etching process. Therefore, the formation of the texture requires many steps and this g standard applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) '-4-473949 A7 __B7 ___ V. Description of the invention (2) It takes a long time and causes a transparent substrate The cost of materials increases, and in addition, the total cost of solid-state image sensing devices also increases. (Please read the precautions on the back before filling this page.) In addition, the solid-state image sensing element obtained by the above related technical methods has a wiring pattern thickness of at most about 1 // m, and the pattern itself is very hard. Therefore, if the height of the protrusions measured by the solid-state image sensing element changes, the wiring pattern cannot be uniformly pressed through the protrusions. Therefore, there may be residual stress at the electronic junction of the transparent substrate and the solid-state image sensing element, and there is a possibility that it cannot be connected. Therefore, in the related art, after the protrusions are formed on the side of the solid-state image sensing element, a flushing process is performed to align the protrusions in height. In addition, in the solid-state image sensing element for a line sensor, the element has a narrow and long shape, a width of 0.3 to 2.0 mm, and a length of 20 to 100 mm. Therefore, the element itself may become warped due to the difference in thermal expansion between the upper layer (organic layer) covering the light absorption region and the element. Therefore, even if the bump heights are aligned through the flushing procedure described above, it is difficult to ensure that connection failure does not occur. [Invention Description] The solid-state image sensing device of the present invention printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics includes a solid-state image sensing element having protrusions on an electrode pad, and a block including a wiring pattern formed by conductive adhesive The transparent substrate, the transparent substrate, and the solid-state image sensing element are coupled by electronically connecting the protrusions to the wiring pattern formed by the conductive adhesive. According to this solid-state image sensing device, since the wiring pattern on the transparent substrate is formed by the conductive adhesive When the texture is formed in the manufacturing process, the material cost of the transparent substrate can be reduced by reducing the required steps and processing time. This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -5- 473949 A7 B7 V. Description of the invention (3) (Please read the precautions on the back before filling this page). The glue is softer than the bump (metal protrusion), and ensures simpler thick film molding. During the bump pressure contact, it is impossible to absorb the height of the bump and the distortion of the solid-state image sensing element on the wiring pattern side. Pressure changes. In addition, the method for manufacturing a solid-state image sensing device of the present invention includes forming conductive lines on a transparent substrate using conductive adhesive, forming protrusions on electrode pads of the solid-state image sensing element, and coupling the transparent substrate to the solid-state image sensing element. At the same time, the alignment between the wiring lines and the bumps is formed. According to the manufacturing method of the solid-state image sensing device, since the conductive lines are formed on the transparent substrate with conductive glue, it can reduce the steps and processing time required to form the lines. To reduce the cost of the transparent substrate. In addition, since the conductive adhesive is softer than the protrusion (metal protrusion) and the thick film is easier to form, when the transparent substrate is in pressure contact with the solid-state image sensing element, it can absorb the height variation of the protrusion and the solid-state image sensing element. On the other hand, pressure fluctuations occur on the wiring pattern side. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Introduction to the Figures] Figures 1A to 1D are structural diagrams of the solid-state image sensing device of the present invention-a preferred embodiment. 2A to 2D are diagrams illustrating the first part of the method for manufacturing a solid-state image sensing device according to the present invention-the preferred embodiment. 3A to 3B are diagrams illustrating a second embodiment of the method for manufacturing a solid-state image sensing device according to the present invention. This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) -6-473949 A7 B7 V. Description of the invention (4) Figures 4A to 4B are diagrams showing other application examples of the present invention. Comparison table of main components 1 Solid-state image sensing device 2 Transparent substrate 3 Solid-state image sensing element 4 Wiring pattern 4 A One end 4 B The other end 5 Light absorption area 6 Electrode pad 7 Protrusion 8 Transparent resin 9 Flexible substrate 10 Wiring pattern 1 0 A end 12 Resin 11 Conductive film (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Detailed embodiment details] The following will explain in detail with reference to the attached drawings The preferred embodiment of the present invention. 1A to 1D are structural diagrams of a preferred embodiment of a solid-state image sensing device according to the present invention, FIG. 1A is a plan view, FIG. 1B is a side view, FIG. 1C is an enlarged view of part P, and FIG. 1D is a part Enlarged view of J. In the solid-state image, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 473949 A7 B7 V. Description of the invention (5) In the sensing device 1, a solid-state image sensing element 3 is installed as a low The wafer is carried on the transparent substrate 2 of the base. The transparent substrate 2 is formed of optical glass or the like and is square in a plan view. A plurality of wiring lines 4 'are formed on the main surface of the transparent substrate 2. One end portion 4 A is one of the wiring lines 4 and the other end portion 4 B is located in the mounting area corresponding to the electrode layout of the solid-state image sensing element 3. Substrate 2-the side area has a predetermined pitch, and the wiring pattern 4 is located in the layout between the ends 4 A and 4 B. The solid-state image sensing element 3 is square (viewed from a plane) to constitute a chip such as a C C D area sensor. A light absorption region 5 is formed near the center of the main surface of the solid-state image sensing element 2. In addition, a plurality of electrode pads 6 (aluminum pad or the like, A bump 7 is formed on the electrode pad 6. In addition, the component mounting area of the transparent substrate 2 is covered with a transparent resin 8, which is located in a gap region between the transparent substrate 2 and the solid-state image sensing element 3, so that the substrate 2 and the component 3 Mechanical connection. In addition, the bump 7 provided in the solid-state image sensing area 3 is connected to one end portion 4A of the wiring pattern 4 of the transparent substrate 2 and thus electronically connects the substrate 2 and the component 3. On the other hand, the transparent substrate 2-side A flexible substrate 9 is provided, and a plurality of wiring lines 10 are formed on the flexible substrate 9 with the same pitch as the other end portion 4 B of the wiring line 4. The transparent substrate 2 and the flexible substrate 9 use the opposite wiring lines 4, 1 0 Ends 4 B and 10 A are thermally and pressure-deposited (via anisotropic conductive film 11 or anisotropic conductive resin) for mechanical and electrical connection. This paper is in accordance with China National Standard (CNS) A4 specifications ( 210 X 297 mm) (Please read the back first Please pay attention to this page and fill in this page again) -Line-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-473949 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The solid-state image sensing element 1 is mainly characterized in that the wiring pattern layout on the transparent substrate 2 is formed by a conductive adhesive, and the acquisition of the conductive adhesive is by kneading fine metal powder and resin into the glue. The pattern is formed by the conductive adhesive, and the wiring pattern 4 The thickness can be up to 10 // m or more. For example, in terms of conductive adhesive materials, silver adhesive is preferred, because it is better to use silver as a fine metal powder in terms of cost. However, gold can also be used. As the glue, a precious metal glue in which palladium and platinum are added to silver or gold, or a base metal glue in which copper or nickel is used. In addition, the resin material kneaded into the fine metal powder can be any thermosetting resin or thermoplastic resin. Method of solid-state image sensing device 1 First, prepare a transparent substrate 2 processed to a predetermined size, then fix it on a screen printing machine, and then place the screen mask on the transparent After the substrate 2 is used, a rubber roller is used to transfer the conductive adhesive coated on the stencil mold cover to the surface of the transparent substrate 2 through the holes of the stencil mold cover. Therefore, the conductive adhesive is used to form a wiring pattern 4 on the transparent substrate at one time. Its shape corresponds to the shape of the stencil mask hole, as shown in Fig. 2A. At this time, the thickness t of the wiring pattern 4 formed on the transparent substrate 2 may be 10 // m or more, preferably 30 or It is larger, as shown in FIG. 2B, which can be set by appropriately setting the printing conditions, such as the gap between the transparent substrate 2 and the stencil mask and the thickness of the stencil. In addition, after the wiring pattern 4 is formed (after the stencil printing), Heat treatment is used to properly harden the conductive adhesive. On the other hand, as for the solid-state image sensing element 3, as shown in FIG. 3A, a protrusion 7 is formed on each electrode pad 6 in the area around the element, which is beneficial (please read first Note on the back, please fill in this page again) 丨 Installed ·. · Line · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -9-473949 A7 B7 V. Description of the invention (7) (Please (Read the precautions on the back before filling out this page.) The end of the gold wire on the electrode pad 6 forms a ball. As shown in FIG. 3B, the wiring tool used can be capillary, and then the gold wire is switched to leave the ball. The protrusions formed as above are generally called spherical protrusions. Next, the transparent substrate 2 forming the texture and the solid-state image sensing element 3 forming a protrusion are opposed to each other, and the two are in pressure contact. One end portion 4 A (see FIG. 1) of each wiring texture 4 and the corresponding protrusion 7 Position the alignment so as to press a protrusion 7 to the end 4 A of the wiring pattern 4. At this time, since the bump 7 is formed of a metal material (gold in this example), and the wiring pattern 4 is formed of a conductive adhesive softer than gold, when the bump 7 and the wiring pattern 4 are pressurized, one end portion 4 of the wiring pattern 4 A Deformation enters a recessed area. In addition, since the thickness of the wiring pattern 4 is more than 1 0 // m, even if the height of the protrusions 7 varies and the solid-state image sensing element 3 is distorted, the pressure of the assembly between the protrusions 7 during pressure contact with the protrusions varies between The wiring pattern 4 side is absorbed. Therefore, the protrusion 7 is connected to one end portion 4A of each wiring pattern 4, and the transparent substrate 2 and the solid-state image sensing element 3 are electronically connected. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Then, when the transparent substrate 2 and the solid-state image sensing element 3 are maintained in a pressurized contact state, a UV-fixed or thermosetting transparent resin 8 is added between the substrate and the element, and then the UV The transparent resin 8 is hardened by irradiation or heat treatment. The transparent substrate 2 and the solid-state image sensing element 3 are mechanically connected by a transparent resin 8. In addition, the electronic connection portion (the connection portion between the wiring pattern 4 and the projection 7) of the substrate and the device is fixed by the transparent resin 8. It is also possible to connect the wiring pattern 4 and the bump 7 after covering the component mounting area of the transparent substrate 2 with the transparent resin 8 and curing the resin. After that, a flexible layer 9 is laminated on the transparent substrate 2-side area, and at the same time, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied to this paper size. -10- 473949 A7 B7 V. Description of the invention (8 ) (Please read the precautions on the back before filling this page) The other end 4 B of the inner wiring pattern 4 on the transparent substrate 2 side is aligned with the end 10 A of the wiring pattern 4 on the flexible substrate 9 side. The anisotropic conductive film 11 is brought into thermal compression contact. The transparent substrate 2 and the flexible substrate 9 are thus electronically and mechanically connected, so that the solid-state image sensing device 1 shown in Fig. 1 can be obtained. In this embodiment, since the conductive glue is transferred by the screen printing method to form the wiring pattern 4 on the transparent substrate 2, compared with the related art method, the number of processing steps for forming the pattern is reduced, and the processing time required is also Significantly shorter. More practically speaking, the number of steps for forming the texture is reduced to only two: coating the conductive adhesive and hardening the conductive adhesive, and the time for forming the texture is shortened by more than 10 minutes. Therefore, the cost of forming the texture can be greatly reduced, and the material cost of the transparent substrate 2 can also be greatly reduced. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy In the situation, each protrusion 7 can be connected to the end 4A of the wiring pattern 4, which can effectively prevent the failed connection caused by the height change of the protrusion 7 and the distortion of the solid-state image sensing element 3. In addition, it is no longer necessary to make the protrusion 7 A flush step with evenly aligned lifting heights. In the above embodiment, the wiring pattern 4 is formed on the transparent substrate 2 with a conductive paste using a screen printing method, but, for example, a distribution method or a stamping method and the above method may also be used. In the above embodiment, the transparent resin is mechanically connected to the gap between the transparent substrate 2 and the solid-state image sensing element 3, but the present invention is not limited thereto. For example, as shown in FIG. 4, in another applicable example of the present invention, only the solid-state image sensing element 3 is covered with a UV-fixed or thermosetting resin around the surrounding portion of the paper. ) -11-473949 A7 B7 V. Description of the invention (g) 1 2. The solid-state image sensing element 3 is not covered with the light absorption area 5, and then the resin 12 is hardened by ultraviolet irradiation or heat treatment to harden the transparent substrate 2 and the solid-state image. The sensing element 3 is mechanically connected. According to the solid-state image sensing device and its manufacturing method of the present invention, since the wiring pattern is made of conductive adhesive on a transparent substrate as a base, the material cost of the transparent substrate can be reduced by saving the number of processing steps and shortening the pattern forming time. Therefore, the cost of the solid-state image sensing device can be reduced. In addition, even if the height of the protrusion changes or the solid-state image sensing element is distorted, the pressure fluctuation generated when the protrusion is pressurized can be absorbed on the wiring pattern side, which can prevent connection failure and improve the reliability of the solid-state image sensing device degree. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -12-

Claims (1)

473949 A8 B8 C8 D8 々、申請專利範圍 1 ·一種固態影像感測裝置,包括: 固態影像感測元件,其在電極墊上有凸起;以及 透明基板,包括用導電膠形成之接線紋路; 藉此用導電膠形成的接線紋路與凸起電子連結以將透 明基板和固態影像感測元件結合。 2 ·如申請專利範圍第1項之固態影像感測裝置,其 中接線紋路厚度爲1 0 // m或以上。 3 .如申請專利範圍第1項之固態影像感測裝置,其 中形成凸起的材料比導電膠硬。 4 . 一種製造固態影像感測裝置之方法,包括下列步 驟: 用導電膠在透明基板上形成接線紋路; . 在固態影像感測元件電極墊上形成凸起;以及 將基板與元件在接線紋路與凸起位置對齊下藉由加壓 接觸而將透明基板與固態影像感測元件結合。 5 ·如申請專利範圍第4項之方法,其中接線紋路厚 度爲1 0 //m或以上。 經濟部中央榡率局員工消費合作社印裝 (請先閱讀背面之注意事項再填寫本頁) 6 .如申請專利範圍第4項之方法,其中形成凸起之 材料比導電膠硬。 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) -13-473949 A8 B8 C8 D8 々, patent application scope 1 · A solid-state image sensing device, comprising: a solid-state image sensing element having protrusions on an electrode pad; and a transparent substrate including a wiring pattern formed by a conductive adhesive; thereby The wiring pattern formed by the conductive adhesive is electronically connected with the protrusion to combine the transparent substrate and the solid-state image sensing element. 2 · If the solid-state image sensing device of item 1 of the patent application scope, wherein the thickness of the wiring pattern is 10 / m or more. 3. The solid-state image sensing device according to item 1 of the patent application, wherein the material forming the protrusions is harder than the conductive adhesive. 4. A method for manufacturing a solid-state image sensing device, comprising the following steps: forming a wiring pattern on a transparent substrate with a conductive adhesive; forming a protrusion on an electrode pad of the solid-state image sensing element; and placing the substrate and the component on the wiring pattern and protrusion Under the aligned position, the transparent substrate is combined with the solid-state image sensing element by pressure contact. 5 · The method according to item 4 of the scope of patent application, wherein the thickness of the wiring pattern is 10 / m or more. Printed by the Consumer Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) 6. If the method of the scope of patent application is No. 4, the material forming the protrusions is harder than the conductive adhesive. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -13-
TW089115032A 1999-08-03 2000-07-27 Solid-state image sensing device and method of manufacturing the same TW473949B (en)

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