TW473893B - Wavelength pre-filtering photodetector - Google Patents

Abstract

The present invention is a wavelength pre-filtering photodetector, wherein the general CMOS transistor process technology is used to form a filter by polysilicon layer, so that the filter has the filtering characteristics in the wavelength of visible light and UV light, the filter is integrated with the photodetection circuit, signal circuit, so as to enhance the sensitivity of the wavelength pre-filtering photodetector, reduce the cost and increase the integrity of product.

Description

473893's Travel Complementary Complementary Wavelength Detect Circuit Purpose and light source products must use the most amount of electrons. Due to the increase of the light wave range, after-use requirements must be added. V. Description of the invention (1) The present invention relates to the pre-filtering of the sensitivity of the light-transmitting characteristics, which can improve the product and the integration according to the general application. The structure and the disadvantages of its use are that the background-like light wavelength detectors can be combined to achieve production, which is not only costly. Components, more specifically, especially 'the long detector that can increase the optical wavelength detector transistor (referred to as CMOS) process technology or subsequent signal processing is mostly a single component junction to build the entire product, its most serious light The machine number detects interference, so the circuit processed by a continuous signal must be manufactured separately and then combined with another product, and the starter used by the company's driving optical wavelength detector when using Shiming appliances, 1 frequency :: Due to the bright light or indoor light approaching, it is easy to produce during detection; ΐί and the infrared frequency detection of the optical signal to detect the wavelength of the background light, so the long detector does not interfere with anything 'is not convenient to use! The dry condition caused by the optical signal detection and the ammonium use light wavelength detector must be connected to another element of Yuanzhuyanyan, which must be reassembled. 70 pieces of Japanese-Japanese film are used for the board.) The plug-in method is used, and the PCB is commonly used. (On the circuit board, make each contact with the first line of the skin = the parts are made and the connection of the contacts needs to be tested. 7, the circuit is operated, and the assembly is high, and the contacts are easy, but the process is complicated. The cost of the case is also missing from the high failure rate of invention., Evening things in Yau electronic components and related products research

473893 V. Description of the invention (2) The hair design technique is not only used for thermal insulation to isolate the sensitivity of the background light source of complementary gold circuit elements, that is, the detector, whose optical crystal silicon layer film number detection interferes with the operation of the application The creator, using the optical connection, can integrate the complementary type, and apply special oxygen semi-transistors with background light and manufacture it to make the further progress: The optical signal caused by the active research to change the filter of the main wavelength detector of the invention It is necessary to enhance the light wave and have better current. The JLI wavelength detector is based on the technology of the present invention. It is understood that the metal oxide is semi-wide, and the process technology has been downgraded. Therefore, it is good to detect the crystal. (Therefore, this method is provided in advance to provide low cost and interference, and the invention is referred to as the CMOS patent for filtering light sources, subsequent signals and the development of strong light wavelengths.) The process technology is compound silicon and can be processed by processing. Pre-filtering the detector is to provide a pre-filter body element that can pre-filter the background long detector sensitivity gain and improve the product. One kind of signal processing and the subsequent manufacturing process and achieve lower structure, wherein two preferred embodiments, shaping, light had made, the reliability can be red r · __-. Pre-filtered light wave processing caused by electrical danger jfi and its effect, and cooperate with the figure light wavelength detection and have a composite optical signal external light signal --------------- one-., One V ... two功效 Long detection road integrated with this function. The advantages can be shown and described in the first figure, which is a schematic diagram of the first preferred scheme of the present invention. The complementary metal-oxide-semiconductor crystal of the second embodiment is a schematic diagram of the first preferred crystal element of the present invention. The second figure is a first preferred sectional view of the present invention. The circuit plane arrangement of the embodiment corresponds to the light wavelength detection element section of the embodiment.

473893 V. Description of the invention (3) Figure. The fourth diagram is a schematic diagram of the base element of the first preferred embodiment of the present invention. Yantian f five diagrams are typical application circuit diagrams of the N-type base element of the first-preferred embodiment of the present invention. Fig. 7 and Fig. 1 are schematic diagrams of a p-type base element of the first preferred embodiment of the present invention. Fig. 7 is a schematic diagram of a typical application circuit of the p-type base element of the first preferred embodiment of the present invention.

The eighth figure is a schematic sectional view of a portion of a light wavelength detecting element according to another preferred embodiment of the present invention. Process of Complementary Metal Oxide Semi-Electric Transistor with Graphical Symbols and Names in the Present Invention .............. (i 0 ) Complex crystal layer ..... Crystal element ... Connection interval ... Deep layer of silicon ......... 'Oxidation seconds ... β β β Circuit diagram · ........ Light detection circuit ... Filter. Signal circuit ... Collection of extremes ......... Base terminal ... (12) Optical wavelength detection element ... (20) ............ (21) ) Silicon layer ......... (22) ............ (23) Silicon surface layer ... .... (24) ............ (25) Base ............ (26) ...... ...... (27) ............ (30) Application circuit ............ (31)

...... (40) (40,) Photosensitive unit ............ (41) ............ (42) Guide line .. ............. (43)… (50) (50,)… (52) (52,) Shooting extreme ......... (53) (53 ') • · · see first

… (54) (54) to the third figure, the pre-filtering wavelength detector of the present invention, page 6 473893

In the first preferred embodiment, the general structure of the system includes a light wavelength detection element (20), a circuit diagram (30), a light detection circuit (. And a signal circuit (50).) The light wavelength detection Based on the circuit diagram (30) element size, the complementary metal oxide can be used to simultaneously manufacture the test element (20) corresponding to a complex silicon layer (12) corresponding to the central source well area through (1 0) technology. Between the sides (2 3), the silicon surface layer (2 4) and silicon (2 6) are formed under the surface layer (24) of the connection area, and the silicon oxide layer (27) is formed: the piece (20), see As shown in Figures 1, 2 and 3, the technology of the + transistor (CMOS) process (10) and the required specifications of the application circuit (31) make the appropriate ^ complementary metal-oxide-semiconductor (CMOS) process. The Wu Cheng i stamp is shown in the three figures, and the optical wavelength detecting crystal element (21) is matched with the CMOS process (10) to form a crystalline silicon layer (22), and the center of the crystalline silicon layer (22) is formed. A silicon surface layer (24) is formed on the periphery of the N-type connection section (23) where the NPN double carrier is formed, and the silica ^ ice layer (25) {BACK} is formed. (25) An NPN bi-carrier N-type base junction section (23) is formed on the outer side, and a silicon layer (24) is coated on the upper side with an insulation effect. The light detection circuit (40) 'Please refer to the second, third and fourth figures. A photosensitive unit (41) is provided to cover a specific position in the spar evening layer (22) of the crystal element (21). The 'photosensitive unit (41) includes the silicon surface layer (24) and the deep layer (2) 5) 'Shi Xilicang substrate (such as poly silicon) produced in the C M 0 S process (1 0) in the operation of the polycrystalline stone layer (1 2)' It forms a thin film filter t ( 4. The filter (42) covers the dioxide layer (27) in a thin film shape. The calender (4 2) is connected to a predetermined number of guide wires (43), and the guide wires (4 3) a connecting section (2 3) connecting the crystal element (2 1), the filter and the light sheet

473893 V. Description of the invention (5) (41) The electrons are connected to the connection section (2 3). The upper surface of the silicon surface layer (2 4) is forced to form an empty feature near the surface. Refer to the third figure as shown by mark A. The silicon surface layer (2 4) here forms an insulating property. That is, the filter (4 2) constitutes a material having the characteristics of Shixi Likang substrate and covers the upper side of the photosensitive unit (41) with a thin film, so that the photosensitive unit (41) forms a specific wavelength such as visible light and ultraviolet light above the light wave receiving surface. The following filtering characteristics can be used, because the band gap of polycrystalline silicon is smaller than that of visible light and ultraviolet light, so it cannot be passed through and filtered out. However, the band gap of polycrystalline silicon is larger than that of infrared light, so it is generally used for detecting signals. Infrared light can pass through, and the filter (42) receives light to generate photo carriers that communicate with the connection section (23) through the guide line (43) and communicate with the deep layer (2 5) of Shi Xi to form a loop. The signal circuit (50) is shown in Figures 2, 3, and 4. The cover is the operation in the CMOS process (10), and one of the signal circuit (50) is used for collector 2 (52) and the crystal. The N-type base (26) of the NpN double carrier of the element (21) is connected and searched, and the polarization (5 3) is connected to the N-type connection interval (2 3) of the source well region of the crystal element (21). Chanting, »俨 俨; the circuit connected between Du Youba's other color consciousness (54) and the body body (21) contains the photosensitive unit (41) measuring circuit (40) and signal circuit (5 (Π駚, * branches make the 4 pre-tests (20), B () integrally connected, the optical wavelength detection element forms an integrated communication, and the optical wavelength detector wavelength detection element (2 ;; circuit components of the;基底 = Ϊ ^ (21) is a jade using the CMOS process (10), and the light detection circuit (4 m, buckle, .f recording force, length detection element (20) has dots The w 5 ^ loop (50) is completed together, and the light wave 70% receives the light wave detection operation and the crystal element (2 i)

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Signal processing operations are integrated to form composite components. == Element (2.) is a circuit that is made in accordance with the specifications of the circuit diagram (30). It can be used for subsequent processing with other crystal elements because it can be processed with complementary = (referred to as CMOS) process technology. The components are completed together. 1 Integrated process technology is used: sub = wavelength detection element (20) electronic circuit, crystal element ⑵) 2: 2 can be connected for this purpose, so that the optical wavelength detector and the subsequent circuit elements Yiteng, to achieve the effect of reducing the cost of manufacturing enterprises. -When the light wavelength detection element (20) is in use, please refer to Figures 4 and 5. The light wavelength detection element (20) receives light, and the light-transmitting sheet (42) receives light to generate i 2 through the guide wire (43) to communicate with the light. Connect the interval ⑵), and connect the Shi Xibing = to form a loop, the silicon deep layer (25) communicates with the photosensitive unit 、 丨), the H photosensitive unit (41) receives the light signal to drive the NpN binary carrier, the crystal element ^ 1) / The infrared signal is detected by the base terminal (54) of the signal circuit (50). The Hai connection section (2 3) and the spar evening layer (2 2) are connected to the collector (5 2) end and the emitter (53) end, so that the collector (52) end and the emitter (53) end are connected. At the same time, the filter (42) is adjacent to the surface layer of the silicon surface layer (24) to form a flaw, forming an empty area for insulation, and the deep layer (25) of silicon is homogeneous and has a structure that is easy to conduct photoelectrons.

When in use, the light source irradiates the light wavelength detection element (20), the filter (41) will generate a photocurrent effect, and the filter (4 2) is adjacent to the silicon table 2 (2 ^). The layer forms an empty feature, and the photoelectricity generated by the filter and the light sheet (42) forms an insulation (insulation) effect on the empty area on the surface of the stone layer (24);

Page 9 473893 V. Description of the invention (7) The photocurrent generated by the violation of the light sheet (41) will be directly conducted by the guide wire to the photon carrier in the connection section (23). ) 'And an emitter (5 3)', and an optical carrier is guided by the emitter (5 3) through the deep silicon layer (2 5). Obviously, the photocurrent of the present invention forms insulation (insulation) directly through the deep layer of silicon (25) without passing through the empty area of the silicon surface layer (24). The deep layer of the deep layer of silicon (25) has the characteristics of homogeneity and better organization , The photoresist has a small resistance and is easy to pass through. Then the photocurrent is weakened by the deep layer of silicon (2 5), which can greatly reduce the flow, and can form a larger flow through the deep layer; this is the field-effect caused the emitter (53) Connect the filter (42) and the base (54) to the silicon surface layer (24). If the filter (42) and the silicon surface layer (24) are adjacent to each other, the silicon table I 24 ^ The state is forced to bear the air, so that the photocurrent passes directly through the emitter (5 3) through the deep layer of silicon (2 4). It can pass quickly and smoothly without interference, and improve the photocurrent gain of the photoelectric crystal, which will form a photocurrent If the gain coefficient is increased, the collector (5 2) has a relatively large photocurrent effect. Please refer to the third and fourth diagrams. If fluorescent lamps and other lamps produce visible light to illuminate the light wavelength detection element (20), the specific frequency wavelength caused by the background light source, such as ultraviolet light or fluorescent light, will cause interference in the detection of light signals. The filter (4 2) has the characteristics of a silicon substrate, so that the visible light and the ultraviolet light can be filtered below the wavelength. The filter (42) covers the contact surface on the upper side of the photosensitive unit (41) for receiving light. The wavelength of visible light and ultraviolet light is close to the frequency of infrared light. By using a thin film, the filter (42) filters out similar frequency light waves in advance, removing optical signal detection interference, so that only infrared light can pass through the polycrystalline silicon gap. , Infrared light does not interfere and drives NPN dual

Page 10 473893 V. Description of the invention (8) The crystal element (21) of the carrier achieves the purpose of the optical wavelength detection element (20) of the present invention to pre-filter the interference of optical signal detection caused by the background light source and enhance the detection of the optical wavelength Device sensitivity. θ When receiving light from the N-type substrate light wavelength detection element, please refer to Figures 4 and 5. The typical application circuit corresponding to the circuit diagram (30), and the collector (52) terminal of the voltage end of the signal circuit (50) Via the emitter (53) end of the light wave input end, the light-driven PN bipolar transistor element (21) is turned on, and the base (54) end of the current outflow end receives the infrared light detection signal on the same day. The optical wavelength detection element (20) is manufactured in conjunction with a crystal element (21). Through a complementary metal-oxide-semiconductor (CM0s) manufacturing process, the optical wavelength detection element (20) is covered at a specific position. A filter (42) with a complex layer of thin film. The filter (42) of the present invention uses a silicon silicon substrate (polily silicon). In addition, the filter of the present invention can have special functions according to use requirements. , Select [am〇r ^) h〇ns Silic0n (i crystal silicon material) or "called ^ crystal si 1 icon (single crystal silicon) or Si 1 icon carb〇n (silicon carbide) or SiGe (silicon germanium alloy)] The specific position of the light wavelength detection element (20), that is, a filter (42) with a thin film of a polycrystalline silicon layer is used above the light wave receiving surface to form a filtering characteristic below the wavelength of visible light and ultraviolet light, because The band gap ratio of polycrystalline silicon is visible, and it has less energy than ultraviolet light, so it cannot be passed through and is filtered out. However, the band gap of polycrystalline silicon is larger than that of infrared light, so infrared light generally used for detection signals can pass through, and Drive the NPN bipolar crystal element (21), and the light detection circuit of the light wavelength detection element (20) (40) is in communication with the signal circuit (50), and the base terminal (54) receives the infrared light detection signal, so that the collector (52) end and the emitter

473893 V. Description of the invention The f circuit at the end of (9) and (53) is turned on to achieve the purpose of the optical wavelength detection element (20) of the present invention to filter the optical signal detection interference caused by the background light source in advance, and the sensitivity of the optical wavelength detector . When the light wavelength detection element (20) of the present invention is used, fluorescent lamps and other lamps produce visible light to illuminate the N-type substrate. The light wavelength detection element (20), then ... the specific frequency wavelength caused by the background light source of the fluorescent lamp will Cause optical signal and signal detection interference, use a thin film. The filter (42) has a polycrystalline silicon layer material. ^ The visible light and ultraviolet light can be filtered below the wavelength. This visible light and ultraviolet light are long and have a frequency close to that of infrared light. For the frequency, please refer to Figures 3 and 4 'shown'. With the main film, the filter (4 2) filters out light waves of similar frequency in advance, removes optical signal detection interference, so that only infrared light can pass through the polycrystalline silicon energy band. Gap 'infrared light drives the crystal element (21) of the NPN double carrier without interference. In addition, the crystal element (21) of the optical wavelength detection element (20) of the present invention can also be applied to PNP bipolar products. Please refer to Figures 6 and 7, which correspond to a light detection circuit (40 ') connection. A signal circuit (50,) is completed together. Because of the use of integrated process technology, the optical wavelength detector and the circuit components for subsequent signal processing are processed, and the optical wavelength detection element (20) of the p-type substrate is manufactured. Can achieve the effect of reducing the cost of manufacturing enterprises. When using it, please refer to # 6, 七 图 所 #. From the optical wavelength detection element (20) and the signal circuit (50,) of a typical P-type substrate application circuit, it can be seen that the current can flow into the collector (52,). End, through the emitter (53,) of the light input end, the light-driven PNP bipolar crystal element (21) is turned on, and then flows out from the base (54,) end of the ground end; that is, from the p-type base optical wavelength detection element When receiving light, the typical application circuit corresponding to the light wavelength detection element (20), the 473893 in the bean. V. Description of the invention (ίο) Signal collector (50,) The collector (52,) of the discharge terminal voltage is transmitted through the light wave input terminal. At the pole (53,) end, the light-driven NPN bipolar transistor element (21) is turned on, and then the base (54,) end of the current outflow end receives an infrared light detection signal.

Although the present invention takes the COMS process as an example, the invention can also be applied to i = other silicon-based semi-transistor processes (Bi CQMS), related to silicon substrates (Poly SiUcon ^ 丨), Double Metal Oxide Semi-Electric Transistor Element Process (BCD) and ADVANCE's BiPolar (advanced dual-carrier process) ... etc. The photo-sensing element illustration is based on the photo-transistor transistor as an example, but the same The integration and filtering methods can be applied to other types of light-sensitive elements, such as photodiodes, photoresistors, etc.. Please refer to the eighth figure for another embodiment of the present invention. The embodiment is similar, except that the filter (41) is connected in a different place; a guide wire is connected to the connection section (23), and the light is received by the filter (42): the crystal element ⑵). The upper side of the area covers the photosensitive unit (41) of the light wavelength test specimen (20). The photosensitive unit (41) communicates with the silicon ^ = (24) through the silicon deep layer (25), and the filter (42) The silicon surface layer (μ) connected to the base layer region of the crystal element (21) is generated by light irradiation, and the photons flow through the silicon surface layer (24) and the silicon. In the deep layer (25), the light detection circuit (0) forms a person who receives a light signal.

▲ The f-wavelength detection element (20,) corresponds to the shape of the crystal element (21), the photosensitive unit (41) corresponds to the position of the source well area of the crystal element (21), and the detection circuit (40) is connected to the signal circuit (50) The conductive wires corresponding to the two are connected to form a loop; the collector (52) end of the signal loop (50) is connected to the base (2 6) of the Doufan 2 1), and the emitter (5 3) end is connected to the crystal

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The connection section (23) of the light receiving area of the piece (21), that is, the end of the emitter (53) forms a connection to the light detection circuit (40), and the circuit connected to the end of the base (54) and the crystal element (2 1 ) Of the crystalline silicon layer (2 2). It can also achieve that the specific wavelength of the light caused by the background light source of the fluorescent lamp during the use of the light wavelength detection element (20,) of the present invention will cause interference in the detection of the optical signal. 'Using a thin film filter (42) to make visible light and The filtering characteristics can be filtered below the wavelength of ultraviolet light. By using a thin film filter (4 2) to pre-filter, dephase, approximate frequency light waves, and remove optical signal detection interference, so that only infrared light can pass through the polycrystalline silicon band gap. The infrared light drives the crystal element (21) of the NPN or PNP bicarrier without interference. To sum up, the present invention is to provide a pre-filtered wavelength detector, an integrated structure of a crystal element and a light wavelength detection element, and manufactured together in a complementary metal-oxide-semiconductor (W, C M 0 S) process technology. The molding can achieve the effect of reducing the manufacturing cost of the enterprise, and at the same time, it can enhance the sensitivity of the light wavelength detector, thereby improving the reliability of the product. It has the novelty of industrial use and the first high degree of creation. When it meets the requirements of the invention patent.

苐 Page 14 473893 Schematic illustrations Page 15

Claims (1)

473893 VI. Application Patent Scope 1 · A pre-filtering and light wavelength detector, which is mainly connected by a light wavelength ^^ element and the corresponding crystal element, and the corresponding conductive wires ^ = form a loop together, so provide Receive the light signal and start the circuit for the user. Its main features are:… 'Huan /. The light wavelength detection element is integrated with the crystal element to form a doubling group. One of the light wavelength detection element's photosensitive unit corresponds to the crystal. Yuan 1 Niu Er = 疋 position interval, one light detection circuit of the light wavelength detection element and one signal circuit of the body component are integrated; and / / day filters are installed on the crystal element Specific position interval, clear: the film does not cover a specific part of the light wavelength detector ^ iiii;; !! On the upper side of the ，! Element, the 遽 light sheet can make light in advance 疋, 疋 wavelength, the photosensitive early element only accepts Specific light wavelength. 2: 2: 1: m: The pre-filtered wavelength detector described in item 1 of item ^^ " The first wavelength detection element is integrated with the crystal element to form an integrated connection 3. If you apply for a patent; Twenty-two directly connected-and completed. «• J H > JL t, ^ · or pre-filtered wavelength detection described in item 2. 41, U 糸 Silicone substrate film. The device, wherein the pre-crossing optical wavelength detection described in the optical wavelength detection unit is based on a complementary metal-oxide semiconductor transistor process based on the characteristics of N-type or p-type substrates for sustainable signal processing. Support and other integrated circuit elements or post 5 · — a kind of pre-filtered wavelength detection, a light wavelength detection element, is a complex σ component, which generally includes: No. circuit connection, and the connection between the measurement circuit and a crystal element A signal t to form a loop; page 16 of the light wavelength detection element 473893 VI. Patent application scope-a photosensitive unit corresponds to a specific position interval of a crystal element; a filter is provided in a specific position interval of the crystal element, The filter covers part or all of the photosensitive unit, and the filter is connected to a signal circuit of the crystal element. 6. The pre-filtered wavelength detector composite component according to item 5 of the scope of the patent application, wherein the filter is connected to the emitter of the signal circuit, so that the photocurrent can easily communicate with the deep layer of the crystal element, which can quickly and easily Through the deep layer of the crystal element in large quantities, the optical wavelength detector improves the current gain. Page 17