TW473776B - Oxidation processing unit - Google Patents

Abstract

An oxidation processing unit of the invention include a processing chamber vessel having an inside in which a substrate can be placed, said processing chamber vessel having a window through which ultraviolet rays can penetrate, a lamp housing having an ultraviolet lamp which can irradiate ultraviolet rays to the inside of the processing chamber vessel through the window, and a process-gas supplying unit for supplying a process gas including ozone into the inside of the processing chamber vessel. The lamp housing is provided with an intake port for introducing an air for cooling into the lamp housing and an outlet port for exhausting the air for cooling from the lamp housing. The outlet port is connected to an ozone-decomposing unit. When the ultraviolet rays from the ultraviolet lamp are irradiated to the process gas supplied into the inside of the processing chamber vessel, the ozone in the process gas is decomposed to conduct an oxidation process to the substrate placed in the inside of the processing chamber vessel. If ozone is generated in the lamp housing, the ozone can be decomposed to a permitted level by the ozone-decomposing unit when the ozone is exhausted through the outlet port.

Description

473770 A7 V. Description of the invention (1) Background of the invention The present invention relates to an oxidation processing unit for oxidizing a substrate such as a semiconductor wafer in a processing chamber container. Disclosure of the prior art As one of the oxidation treatment units for oxidizing a substrate such as a semiconductor wafer, an oxidation treatment unit for a single substrate is known from Japanese Patent Publication No. 7937 ^ 998 (1 ^ -97377) and the like. A single substrate oxidation processing unit includes a processing chamber container having an inner side in which a semiconductor wafer is placed, a processing gas supply unit for supplying a processing gas including ozone, and a lamp cover having the inside of the processing chamber container. Ultraviolet light, which can emit ultraviolet light through the processing chamber to the trough window to the inside of the processing chamber container. The ultraviolet light from the ultraviolet lamp irradiates the ozone inside the container of the processing chamber, so the ozone is decomposed to oxidize the semiconductor wafer placed inside the container of the processing chamber. In the oxidation treatment unit, in order to improve the efficiency of the ultraviolet light emitted by the ultraviolet lamp by the lamp cover, it is preferable to maintain the surface temperature of the ultraviolet lamp at a predetermined temperature (24 to 27 ° C). The oxygen port is in the lamp cover to allow cooling air to flow through it. In this case, the surface temperature of the ultraviolet lamp can be maintained in a predetermined range by adjusting the flow rate of the cooling air flowing through the lamp cover. The air outlet is usually connected to a heat exhaust system. However, in the oxidation treatment unit, when the cooling air flows through the lamp cover, the oxygen of the cooling air can be chemically changed into ozone by the ultraviolet light having a specific wavelength emitted by the ultraviolet lamp. In this example, ozone can be emitted from the lampshade to the heat emission system. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page) Loading --- I L ---- Order ------- -Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 V. Description of the invention (2) In addition, if the space between the sprinkler and the platform heater is small, the remaining ozone inside the processing chamber container can be fully borrowed by the platform heater Thermal decomposition. If the space between the shower head and the platform heater is large enough to improve the uniformity of the oxidation treatment, the remaining stinky milk is not enough to be thermally decomposed by the platform heater. In this case, the remaining ozone can be emitted from the inside of the processing chamber container. SUMMARY OF THE INVENTION The present invention is intended to effectively solve the aforementioned problems. The object of the present invention is to provide an oxidation treatment unit 'in which the ozone emitted from the lamp cover to the heat emission system can be reduced to a tolerable level. Another object of the present invention is to provide an oxidation treatment unit capable of preventing ozone from being generated in a lamp cover. Another object of the present invention is to provide an oxidation treatment unit in which ozone emitted from the inside of a processing chamber container can be reduced to a tolerable level. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints an oxidation processing unit containing a processing chamber container having an inner side in which a substrate can be changed, the processing chamber container has a window through which ultraviolet light can penetrate; With-ultraviolet lamp, ultraviolet lamp can emit ultraviolet light through the window to the inside of the processing chamber container; a processing gas supply unit is used to supply a processing gas including ozone to the inside of the processing chamber container; an air inlet is used for cooling Air oxygen is introduced into the lamp cover; an air outlet is used to discharge cooling air from the lamp cover; and an ozone decomposition unit is connected to an air outlet; wherein the ultraviolet light from the ultraviolet lamp is irradiated to the processing gas supplied to the inside of the processing chamber container, so The ozone of the processing gas is decomposed, and the substrate placed inside the processing chamber container is oxidized. According to this feature ', even if ozone is generated in the lampshade, when ozone is discharged through the air outlet, ozone can be decomposed by the ozone decomposition unit and reduced to an allowable level. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) 473776 A7 _____ B7 V. Description of the invention (3) The preferred ozone decomposition unit is composed of a catalytic unit. Oxidation bell. In addition, the ozone decomposition unit is composed of a -thermal decomposition unit having -heating ||. By using these simple ozone decomposition units, ozone is easily decomposed. In addition, an oxidation treatment unit includes: a processing chamber container having an inner side in which a substrate can be disposed, the processing chamber container having a window through which ultraviolet rays can penetrate; a lampshade having an ultraviolet lamp, and the ultraviolet lamp can emit ultraviolet light Through the window to the inside of the processing chamber container; a processing gas supply unit for supplying a processing gas including ozone to the inside of the processing chamber container; an air inlet for introducing cooling inert gas into the interior of the lamp cover; an air outlet for The cooling inert gas is discharged from the lampshade; wherein the ultraviolet light from the ultraviolet lamp is irradiated to the processing gas supplied to the inside of the processing chamber container, so the ozone of the processing gas is decomposed and oxidized to face the substrate placed inside the processing chamber container. deal with. According to this feature, ozone can be prevented from being generated in the lampshade. Preferably, the air inlet and the air outlet are connected to the circulation system to circulate the inert gas. The circulation system is provided with a heat radiator which can radiate the heat circulated from the circulation system to the inert gas. In this case, the volume of inert gas used can be reduced to reduce costs. In addition, the oxidation treatment unit includes: a processing chamber container having an inner side in which a substrate can be disposed; a processing gas supply unit for supplying a processing gas including ozone to the inside of the processing chamber container; and a heater for heating and setting The substrate inside the processing chamber container; an exhaust system to reduce the pressure inside the processing chamber container, and the paper is discharged from the inside of the processing chamber container. The paper size applies to Chinese National Standard (CNS) A4 (210 X 297) (Please read the notes on the back before filling out this page) tr --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 473776 Printed by the Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 5 Explanation of the invention (4) Gas release; and a thermal decomposition unit provided in the exhaust system to thermally decompose ozone; the ozone included in the processing gas supplied to the inside of the processing chamber container is decomposed to the inside of the processing chamber container According to this feature, the ozone emitted from the inside of the processing chamber container can be reduced to an allowable level. | The preferred thermal decomposition unit includes a heat exchanger made of alumina. In this example, even if the gas discharged from the inside of the processing chamber container contains nitrogen oxides (NOx), the thermal decomposition unit can be prevented from being corroded and its durability can be improved. The preferred ozone-decomposing catalytic unit is relocated to the downstream portion of the specific thermal decomposition unit of the exhaust system. In this case, the remaining ozone not decomposed by the thermal decomposition unit can be effectively decomposed by the catalytic unit. In addition, even if the pressure in the exhaust system is changed to cause backflow inside the processing chamber container, the substrate can be prevented from being contaminated with gold. It is preferable that an inert gas introduction unit is used to dilute the gas system discharged from the inside of the processing chamber container with an inert gas, and the gas system is disposed at an upstream portion of the exhaust system than the thermal decomposition unit. In this case, even if the gas discharged from the inside of the processing chamber container contains nitrogen oxides (NOx), the modification of the exhaust system and / or the catalyst of the catalytic unit can be prevented from being corroded or damaged by the nitrogen oxides because the processing chamber The gas discharged from the chamber container has been diluted with an inert gas. Brief description of the drawings. Fig. 1 is a schematic longitudinal sectional view of a first embodiment of an oxidation treatment unit for a single substrate according to the present invention. Fig. 2 is a first embodiment of the oxidation treatment unit shown in Fig. 1. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 4 I ---- II ---- I I ----- II ^ ---- l · I-^- ---- I 1 ^ (Please read the notes on the back before filling this page)

The gas supply officer 6 is connected to a known ozone generator (not shown in the figure) by a mass-flow_controller (not shown in the figure), which is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Oxygen is supplied to the ozonator as raw ozone. In addition, a small amount of added gas such as nitrogen is supplied to the ozonator to improve the efficiency of ozone production. A circular opening having a larger diameter than the semiconductor wafer W is formed on the top plate of the processing chamber valleyr 1. The UV-transparent window 10 is air-tightly attached to a circular opening. The window 10 may be made of a material that is transparent to ultraviolet light, such as crystal. The phase-type lamp cover 20 includes at least one ultraviolet lamp 21 disposed on the top plate of the processing chamber container 1 through a window 10. In this example, a plurality of ultraviolet lamps 21 may be provided on the lamp cover 20. The plurality of ultraviolet lamps 21 can emit external light through the window 10 to the inside of the processing chamber container. When the ultraviolet light is irradiated to the atmosphere inside the container of the processing chamber by the ultraviolet lamp 21, the ozone (〇3) contained in the atmosphere is decomposed into oxygen (〇2) and active oxygen (〇 +). The semiconductor wafer W is oxidized by active oxygen. Each ultraviolet lamp 21 can more effectively emit ultraviolet light when its surface temperature is maintained in a predetermined range (240 to 27 ° C). In this way, a cooling system is formed through the lamp cover 20 to maintain the surface temperature of the ultraviolet lamp 21 inside the lamp cover 20 within a predetermined range. The cooling system can be cooled with air. In this example, the cooling system has an air inlet 22, an air outlet 23 and a blower 24 for forced ventilation. The air outlet is connected to the heat exhaust system 50. The catalytic unit 51 is provided in the heat emission system 50 as an ozone decomposition unit capable of decomposing ozone. In this way, even if the oxygen contained in the cooling air inside the lampshade 20 is chemically changed or ozone by ultraviolet rays having a specific wavelength (185 nm) emitted from the ultraviolet lamp 21, the catalytic unit 51 can still decompose ozone. (Please read the precautions on the back before filling out this page) η equipment ----- r --- order ------

n ϋ I $, this paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 10 Figure 2 is a schematic diagram of the lamp shade cooling system. Each lampshade 20 corresponds to the cavity to the trough, and has an oxygen inlet 22 for introducing cooling oxygen to the lampshade 20 and an air outlet for exhausting the cooling air of the lampshade 20. A blower 24 is placed on each of the lamp covers 2 to force the cooling air to be blown from the air outlet 23 to the heat discharge system 50. The heat emission system 50 is connected from one main exhaust pipe 50a to another exhaust system of the factory (not shown in the figure), and the plurality of auxiliary exhaust pipes 50b are respectively connected to the respective air outlets 23 of each lampshade 20, and A joint 50y connects the main discharge pipe 50a and a plurality of field discharge pipes 5Gb. The catalytic unit 51 is provided in each auxiliary exhaust system. An ozone sensor 52 for detecting ozone is provided at each sub-emission pipe 50b at a position further downstream than the catalytic unit 51. A damper (not shown in the figure) is used to prevent the backflow from being set at the joint 50y. This process involves a plurality of auxiliary discharge pipes 50b joining the main discharge pipe 50a. The “blower” is installed in the main exhaust pipe 50a. The operating capacity (power) of the blower 53 is determined by considering the amount of air discharged from the lamp cover 20 'the discharge resistance of the catalytic unit 51 and the discharge resistance of the pipeline. As shown in FIG. The unit 51 includes a pair of carbon-like casings 61 and 62. Each of the pair of casings 61 and 62 has a connecting portion 611), 62b in the middle, and a peripheral flange 61c, 62c on the peripheral portion. The connecting portion 611 ^, 6 holes It has flanges 61 & 62a. The peripheral flanges 61c and 62c are connected by bolts or the like, so the catalyst 65 is sandwiched between the second wire nets 63 and 64 and is covered and fixed in the pair of casings 61 and 62. The catalytic unit 51 has a large area of a catalyst through which a gas can pass. As the catalyst 65, ZhuiS can be used. However, the use of manganese dioxide as the catalyst 65 'is preferred because manganese dioxide is far more resistant to sealing and less flammable. 473776 A7

V. Description of the invention (9) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, the operation of the oxidation treatment unit will be described as follows. When the semiconductor wafer W is processed by the oxidation processing unit, a transfer arm (not shown) for transferring Jk to the valley 13 is first set to transfer the semiconductor wafer w to the inside of the processing chamber container 丨 via the gate valve 8. The semiconductor wafer w is placed on the stage 3 and fixed by an electrostatic chuck. The heater coupled to the stage 3 then heats the semiconductor wafer W to a predetermined processing temperature. The pressure inside the processing chamber container 丨 is then reduced to a predetermined processing pressure by discharging gas from the inside of the processing chamber container 1. The pressure inside the processing chamber container is maintained at a predetermined processing pressure (at a vacuum level), and ozone gas, which is a processing gas, is supplied to the inside of the processing chamber container 1. The ozone gas generated by the ozonizer is introduced into the shower head 5 through the air supply pipe 6 and is ejected from a large number of air jet holes toward the semiconductor wafer W placed on the platform 3 of the processing space 5. At the same time, the ultraviolet lamp 21 of the lamp cover 20 is turned on and starts to irradiate ultraviolet light. The ultraviolet light passes through the window 10 made of crystal and enters the inside of the processing chamber container 1 maintained at a predetermined pressure (at a pre-vacuum level). The ultraviolet light then passes through the shower head 5 made of crystal and enters the atmosphere of the processing space 5, which atmosphere is mainly composed of ozone. Ozone is then decomposed into oxygen and reactive oxygen by ultraviolet light. The semiconductor wafer w placed on the stage 3 is oxidized by active oxygen. During the oxidation process, the cooling system is mainly composed of an oxygen inlet 22, an air outlet 23, and a blower 24. The cooling system allows the cooling air to flow through the lamp cover 20 to cool the ultraviolet lamp 21, and to maintain the surface temperature of the ultraviolet lamp 21 within a fixed range. In this example, the oxygen of the cooling air flowing through the lamp cover 20 is chemically changed into ozone by the rays having a specific wavelength in the ultraviolet light emitted from the ultraviolet lamp 21. Ozone can then be emitted from the air outlet 23 to the heat emission system 50 along with its gas. This paper size is applicable _ house standard (CNS) A4 specification (21G x 297 meals) 12 (Please read the precautions on the back before filling this page)

^ 73776 A7

V. Description of the invention (10) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs / Example, the ozone-decomposable catalytic unit 51 is installed in the field discharge pipe 50b connected to the gas outlet 23. Thus, when ozone is discharged through the air outlet 23, it can be decomposed by the catalyst 65 of the catalytic unit 51 and reduced to not more than the allowable concentration (0.1 ppm). If the capacity of the catalyst 65 of the catalytic unit 51 is too deteriorated, ozone flows out through the catalytic unit 51 and the odor sensor 52 senses ozone (case). This can prevent ozone from flowing out, such as by using the ozone sensor 52 to interactively lock it. Changing the operating mode to a safe mode prevents ozone from flowing out. The safety mode indicates a mode in which the ultraviolet lamp 21 is turned off when the ozone sensor 52 senses a predetermined volume of ozone, a mode in which a warning lamp lights up when the ozone sensor 52 detects a small amount of ozone, and urges catalyst replacement. The present invention is not limited to the foregoing specific embodiments and various modifications can be made. For example, an ozone decomposition unit provided in a heat emission system from a lampshade may be a thermal decomposition unit having a heater capable of thermally decomposing ozone instead of a catalytic unit. In addition, the cooling air flows through the lampshade of the foregoing specific embodiment, but Iβ cold air can flow through the lampshade. Figure 4 is a schematic diagram of another cooling system of the lampshade. In the example shown in FIG. 4, the lamp cover 20 is connected to an inert gas circulation system 70, which can circulate the inert gas for cooling through the lamp cover 20. The preferred inert gas circulation system 70 includes a circulation tube 71 and can circulate an inert gas such as nitrogen (N2) through the lamp cover 20, and a heat radiator 72 provided on the circulation tube 71 can radiate the heat of the inert gas circulated by the circulation tube w. . In order to cool the ultraviolet lamp 21 in this way, an inert gas such as nitrogen (NJ replaces the air circulation and passes through the lamp cover 20. Therefore, no odor can be generated inside the lamp cover. Change ------------- install ---- -r --- order --------- line (please read the precautions on the back before filling this page)

This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) 473776

In other words, there is no need to provide an ozone decomposition unit. In addition, if the inert gas system is discharged from the lampshade to the heat emission system, it needs to be inert, and the gas price is extremely high. In this way, as shown in FIG. 4, the inert gas is circulated through the lamp cover 2G, and the pure emitter 72 radiates the heat of the inert gas circulated by the circulation system 71. In this case, only a small amount of inert gas is required, which can greatly reduce costs. One by one — ______________ The oxidation treatment unit of the foregoing specific embodiment belongs to a cold-wall type | soil. However, the present invention can be applied to soil stillness. In addition, the oxidation treatment unit it of the foregoing specific embodiment is a treatment unit for a single substrate. However, the present invention is applicable to a batch type processing unit. The substrate may be a glass substrate, an LCD substrate, etc. instead of a semiconductor wafer.

— — — — — — — — — I — · I 11 (Please read the notes on the back before filling this page) and then refer to Figures 5 to 8 for further details of the second embodiment of the present invention. Fig. 5 is a schematic longitudinal sectional view of a second embodiment of the oxidation treatment unit for a single substrate according to the present invention. Fig. 6 is a schematic diagram of the gas system of the second embodiment. Fig. 7 is a longitudinal sectional view of a catalytic unit of a gas system. Fig. 8 is a schematic longitudinal sectional view of a thermal decomposition unit of a gas system l · --- ^ ----

1 · n ϋ · 1 I% Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Referring to Fig. 5, the main structure of the oxidation treatment unit for a single substrate of the second embodiment will be described. The oxidation treatment unit for a single substrate includes a processing cavity to the trough device 1 01 ′, which is made of a heat-resistant and anti-contact material such as inscription. The exhaust port 102 is provided at the bottom of the processing chamber container 101. The gas port 10 is connected to the exhaust system 150, and has a vacuum pump 151 (exhaust unit) and a pressure controller for discharging gas from the inside of the processing chamber container 101 and lowering the inside of the processing chamber container 101. Pressure to a predetermined pressure. Exhaust system 15〇 Connected to the paper size Applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 issued) '^-473776 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 15 A7 __B7 _ V. Description of the invention (12) The processing and discharge pipeline placed in the factory has a unit for removing harmful materials. A rotating platform (sensor or holder) 103 is provided in the processing chamber container 101 for holding a substrate such as a semiconductor substrate W. The electrostatic loss head is disposed on the upper surface of the platform 103 and is electrostatically adhered to the semiconductor wafer W. In addition, a heater (not shown) is coupled to the stage 103 to heat the semiconductor wafer w to a predetermined temperature uniform on the surface of the semiconductor wafer W. > The shower head 105 is set on the top surface of the processing chamber container 101 to supply a processing gas to the upper surface of the semiconductor wafer W (the surface to be processed). The shower head has an internal space and a large number of ejection holes (not shown in the figure) for ejecting the semiconductor wafer W on the platform 103 supplied with the internal space processing gas toward the processing space s. The shower head 105 may be made of a heat-resistant material which is transparent to ultraviolet light, such as preferably crystal. The ozone gas (〇3), which is a processing gas, is supplied to the internal space of the shower head 105 from a gas introduction pipe 106 (constituting a part of the processing gas supply unit 160). As shown in Fig. 6, the processing gas supply unit 160 has an ozonator 161 >. The ozonator 161 generates ozone and supplies it to the shower head 105 via a gas introduction pipe 106. The light-off line 162 is branched from the gas introduction pipe 106. Then, until the ozone is stably generated, the ozone is not introduced into the processing chamber container 101, but is discharged to the exhaust pipe 152 of the exhaust system 150 through the light-off line 162. The gas introduction pipe 106 has an on-off valve 163. Similarly, the ignition line 162 has an on-off valve 164. Oxygen (〇2) is supplied to the ozonator 161 as an ozone raw material. In addition, a small amount of nitrogen (N2) is suitable for supplying 161 俾 of the ozonator to improve the efficiency of ozone production. A circular opening with a diameter larger than the diameter of the semiconductor wafer W is formed to handle the paper size applicable to the Chinese National Standard (CNS) A4 specification (21 × X 297 meals) — II --II l · I-^. I- -II-- (Please read the notes on the back before filling this page) T 76 A7 B7 V. Description of the invention (B) The top plate of the chamber container 101. Ultraviolet light-transmissive window 11 is air-tightly attached to the circular opening. The window 110 may be made of a material that is transparent to ultraviolet light, such as crystal. The wafer transfer port 107 is provided at a part of the side wall of the processing chamber container 10. The gate valve 108 is disposed adjacent to the outside of the wafer transfer port 107. The opening n is provided in the other side wall portion of the processing chamber container 101. The opening U1 is used to view the inside of the processing chamber container 101. The cover U2 is usually provided outside the adjacent opening m. The lamp cover 120 is disposed on the window 110. One or more ultraviolet lamps 121 are disposed on the lamp cover 120. The ultraviolet lamp 121 emits ultraviolet light through the window 110 to the inside of the processing chamber container 101. When ultraviolet light is irradiated to the atmosphere inside the processing chamber container 101 by the ultraviolet lamp 121 through the window 110, the ozone (〇3) contained in the atmosphere is decomposed into oxygen (〇2) and active oxygen (CT). The semiconductor wafer w is oxidized by active oxygen. The ultraviolet lamp 121 can more efficiently emit ultraviolet light when the surface temperature is maintained within a predetermined range. In this way, a cooling system is formed by the lamp cover 120 to maintain the ultraviolet lamp 121 inside the lamp cover 120 to indicate a temperature within a predetermined range. The cooling system has an air inlet 122, an oxygen outlet 123, and a blower 124 for forced ventilation. The air outlet 123 is connected to the factory's heat emission system (not shown). As shown in FIG. The residual or mixed ozone in the exhaust gas can be thermally decomposed. The thermal decomposition unit is arranged in the exhaust pipe 152 of the exhaust system 15 at a position upstream of the vacuum pump 151. In other words, it is between the processing chamber valley device 101 and the vacuum pump 151. In addition, in order to be more secure, the ozone decomposing unit 156 is installed in the exhaust system 15 ° more than the vacuum pump 15 丨 (Please read the precautions on the back before filling this page). ----- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 3 ~ 7g Description of the Invention (Η) The downstream part. The gas system supplied through the light-off line 162 is discharged to the exhaust pipe 152 through the catalytic unit 156 '. As shown in FIG. 7, the catalytic unit 156 includes: a stainless steel tube-shaped housing 156k;-an upper catalyst 156a and a lower catalyst 156b, which are arranged in the axial direction of the 'type setting body 156k (in (Flow direction); an upper ozone sensor 156c is disposed between the upper catalyst 156a and a lower catalyst 156b; and a lower ozone sensor 156d is disposed further downstream of the lower catalyst 56b. The catalysts 156a and 156b are made of manganese dioxide, which is more resistant to heat than activated carbon. As shown in Fig. 8, the thermal decomposition unit 155 includes a thermal block 155b (heat conductor) made of alumina. Specifically, the thermal decomposition unit 155 has a tube-shaped body 155a made of crystal glass. The thermal block 155b made of alumina contains a large number of gas channels. The thermal block 155b is provided in the tubular body 155 &. The ceramic heater 155c θ is placed outside the tubular body 15 5 a to heat the hot block 15 5 b. The cooling water pipe 155d is provided outside the ceramic heater 155c. A thermal insulation cover 155 £ surrounds the outside of the cooling water pipe 155d. As for the heat element H element 155, a stainless steel heater can be used. but

_ * " ** _ 丨 _ __ι_ 丨 __υ »III It is preferable to use a heater made of ^ Lu as the thermal decomposition unit 155. The reason is explained later. As described above, the nitrogen gas (N2) is supplied to the ozonator 161 俾 to generate ozone more stably. In this way, nitrogen and ozone may react to produce nitrogen oxides (NOx). liAik (N0χ) ϋ1 ^; becomes nitric acid (νο3). Nitric acid causes corrosion. Change-~ one .., one one ..., one-- "In other words, when the thermal block 155b is made of aluminum oxide, the thermal block 1551) can be prevented from being rotten by nitrogen oxides. In addition, the thermal block 155b may be made of any ceramic. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -----: ------------- ^ (Please read the notes on the back before filling in this (Page) 17

47377B η Amendment Supplement Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (15) The reason why the catalytic unit 156 is installed in the system 150 downstream of the thermal decomposition unit 155 is as follows. Due to the pressure change of the discharge system 150, a backflow from the discharge system 150 to the inside of the processing chamber container 101 may occur. Then, if the catalytic unit 156 is disposed close to the processing chamber volume 101, the catalyst manganese dioxide may flow into the inside of the processing chamber container. Manganese dioxide causes gold pollution to the semiconductor wafer W. In addition, in order to prevent the equipment or structure inside the exhaust system 150 from being corroded, an inert gas such as nitrogen (N2) may be effectively introduced into the exhaust pipe 152 to dilute nitrogen oxides (NOx) with the inert gas. In the unit shown in FIG. 6, the inert gas introduction pipe 158 (inert gas introduction unit) is connected to the heat exhaust system 15, which is upstream of the thermal decomposition unit 155, in other words, between the processing chamber container 101 and the thermal decomposition unit 155. The function of the inert gas introduction pipe 158 is to dilute the discharged gas with nitrogen (N2). This prevents the vacuum pump 1 5 1 and the catalytic unit 1 56 from being corroded or damaged. The operation of the aforementioned oxidation treatment unit will be described later. When the semiconductor wafer W is processed by the oxidation processing unit, a transfer arm (not shown) is first provided in the transfer chamber container, and the semiconductor wafer W is transferred to the inside of the processing chamber container 101 through the gate valve 108. The semiconductor wafer w is placed on the stage 103 and fixed by an electrostatic head. The semiconductor wafer W is then heated to a predetermined processing temperature in conjunction with the heater of the platform 103. Then, the internal pressure of the processing chamber container 10i is reduced to a predetermined processing pressure by discharging gas inside the processing chamber 101. The pressure inside the processing chamber container 101 is maintained at a predetermined processing pressure (at a vacuum level), and at the same time, ozone gas as a processing gas is supplied to the inside of the processing chamber container 101. The ozone gas generated by the ozonizer 161 passes through the paper supply air. Standards have been used in China National Standard (CNS) A4 specifications (210 X 297 mm) < Please read the notes on the back before filling this page) 丨 Binding -------- 473776 Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by Consumer Cooperative A7 B7 V. Description of Invention (17) Easy to detect. If deterioration of the catalyst 156a & 156b is detected, the catalyst 156 & and 156b can be replaced with a new catalyst. In this way, according to the oxidation treatment unit, the thermal decomposition unit 155 for thermally decomposing ozone is provided in the exhaust system 150. In this way, the residual ozone in the exhaust gas can be reduced to a tolerable level. In addition, the thermal decomposition unit 155 includes a thermal block 1551) (a heat conductor) made of aluminum oxide. In this way, even if the exhaust gas contains nitrogen oxides (NOx), the thermal decomposition unit 15 5 can avoid being rotten by insects and improve its durability. In addition, the ozone-decomposing catalytic unit 156 is provided in the exhaust system 150 further downstream than the thermal decomposition unit 155. The residual ozone thus not decomposed by the thermal decomposition unit 155 can be sufficiently decomposed by the catalytic unit 56. In addition, even if a backflow occurs inside the processing chamber container 101 due to the pressure change of the exhaust pipe 152, the semiconductor wafer W can be prevented from being contaminated with gold by the catalyst. In addition, an inert gas introduction unit 158 for diluting the exhaust gas with an inert gas is installed in the exhaust system! 50 is located more upstream than the catalytic unit 56 and more upstream than the thermal decomposition unit 1 55. Thus, even if the exhaust gas contains nitrogen oxides (NOx), the equipment of the exhaust system 150 and / or the catalyst of the catalytic unit 156 can be prevented from being corroded or damaged by the nitrogen oxides, thus improving its durability. '' The present invention is not limited to the foregoing specific embodiments, but various modifications can be made. For example, the oxidation treatment unit of the foregoing specific embodiment is of a cold wall type. However, the present invention is applicable to a hot wall type. In addition, ozone can be decomposed by ultraviolet light to be oxidized by the substrate inside the processing chamber container. However, ozone can also be decomposed by a combination of thermal ultraviolet light and heat. In addition, the oxidation treatment of the foregoing specific embodiments < Please read the precautions on the back before filling this page)

473776. A7 _B7_ 5. Description of the invention (18) The unit is a processing unit with a single substrate. However, the present invention is also applicable to a batch type processing unit. The substrate can be glass substrate, LCD substrate, etc. instead of semiconductor crystal Economy, printed by the consumer cooperative of employees of the Ministry of Intellectual Property Bureau

I ------— — — — — — · III l · III Order — — — — — — — — I- (Please read the notes on the back before filling out this page) 21 This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) 473776 A7 _B7_ V. Description of the invention (19) The component number is printed on the basis of the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 ... processing chamber container 2 ... exhaust port 3 ... rotation platform 5 ... spray head 6 ... common air pipe 7 ... wafer transfer port 8 ... gate valve 10 ... window 11 ... opening 12 ... cover 13 ... Transfer chamber container 15 ... Process gas exhaust system 20 ... Lamp cover 21 .., UV lamp 22 ... Air inlet 23 ... Air outlet 24 ... Blower 50 ... Process heat exhaust system 50a ... Main exhaust pipe 50b ... sub-emission pipe 50y ... connector 51..catalytic unit 5 2 ... ozone sensor 53 ... blower 61-2 ... case 61a-62a ... flange 61b-62b ... couplings 61c-62c ... peripheral flanges 6 3 · 4 ... wire network 65 ... catalyst 70 ... inert gas circulation system 71 ... circulation tube 72 ... heat radiator 101 ... treatment Chamber container 102. " Exhaust port 103 ... Rotary platform 105 ... Spray Head 106 ... gas introduction tube 107 ... wafer transfer port 10 8 ... gate valve 110 ... window 111 ... opening 112 ... cap 120 ... light cover (please read the precautions on the back before filling this page) Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) —22 473776 A7 _B7 V. Description of invention (20) Printed by the Consumer Cooperative of the Ministry of Economy and Intellectual Property Bureau

121 ... ultraviolet lamp 122 ... air inlet 123 ... air outlet 124 ... blower 150 ... exhaust system 151 ... vacuum pump 152 ... exhaust pipe 155 ... thermal decomposition unit 155a ... tube shape Body 155b ... heat block 15 5c ... ceramic heater 155d ... cooling water pipe 155e ... insulation cover 156 ... catalytic unit 156a ... upper catalyst 156b ... lower catalyst 156c ... upper Ozone sensor 156d ... lower ozone sensor 156k ... tubular housing 158 ... inert gas introduction unit 160 ... processing gas supply unit 161 ... ozonizer 162 ... ignition line 163-4. .. on-off valve ------------- install ---- l · --- order --------- line (Please read the precautions on the back before filling this page ) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 23

Claims (1)

473776 τ, patent application scope 1. An oxidation treatment unit comprising:-a processing chamber container having an inner side in which a substrate can be set, the processing chamber container having a window σ, ultraviolet rays can penetrate the window, and a lampshade having-ultraviolet rays Lamp, ultraviolet lamp can emit ultraviolet light through the window to the inside of the processing chamber container, a processing gas supply unit is used to supply a processing gas including ozone to the inside of the processing chamber container, and an air inlet is used for cooling-air- Color is introduced into the lamp cover, an air outlet is used to discharge cooling air from the lamp cover, and an ozone decomposition unit is connected to an air outlet, in which ultraviolet light from the ultraviolet lamp is irradiated to the processing gas supplied to the inside of the processing chamber container, The ozone of the gas is decomposed to oxidize the substrate placed inside the processing chamber container. 2. For example, the oxidation treatment unit in the scope of patent application, wherein: the ozone decomposition unit is composed of a catalytic unit, which contains a catalyst mainly containing manganese dioxide. 3. The oxidation treatment unit according to item 1 of the patent application scope, wherein: the ozone decomposition unit is composed of a thermal decomposition unit with a heater. 4. An oxidation processing unit comprising: a processing chamber container having an inner side in which a substrate can be set, the processing chamber container having a window through which ultraviolet rays can penetrate, a lampshade having an ultraviolet lamp, and an ultraviolet lamp capable of emitting Ultraviolet light passes through the window to the inside of the processing chamber container. This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 meals) (Please read the precautions on the back before filling this page) ------- -Order --------- Line-printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs > n ϋ .1 — ϋ .1 ϋ ϋ 24 β3776 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy Ab B5 Cb -___ D8 Patent application scope A processing gas supply unit is used to supply a processing gas including ozone to the inside of the processing chamber container, an air inlet is used to introduce cooling inert gas into the interior of the lampshade, and an air outlet is used by The lamp cover emits inert gas for cooling, in which ultraviolet light from the ultraviolet lamp is irradiated to the processing gas supplied to the inside of the processing chamber container, so the ozone of the processing gas is decomposed and placed on Substrate holder inside the processing chamber for oxidation treatment. 5. The oxidation treatment unit according to item 4 of the scope of patent application, wherein: the air inlet and the air outlet are connected to the circulation system to circulate the inert wrap, and the circulation system is provided with a radiator which can radiate the circulation system to cause circulation Of inert gas. 6. · An oxidation processing unit comprising: a processing chamber container having an inner side in which a substrate can be set, a processing gas supply Zhuo Yuan for supplying a processing gas including ozone to the inside of the processing chamber container, and a heater for heating A substrate placed inside the processing chamber container, an exhaust system to reduce the pressure inside the processing chamber container, and gas to be discharged from the inside of the processing chamber container, and a single set in the exhaust system to thermally decompose ozone Among them, the ozone included in the processing gas supplied to the inside of the processing chamber container is decomposed, and the substrate provided inside the processing chamber container is subjected to the paper standard applicable to Chinese National Standard (CNS) A4 specification (210 X 297 meals) ) 4 ---------------------- install -------- order --------- line (please read the back first Please fill in this page again for attention} 25 Oxidation treatment in the scope of patent application. 7. For example, the oxidation treatment unit in the scope of patent application item 6, where: The thermal decomposition unit includes-a heat exchanger made of oxygen. 8. Rushen = patent scope The oxidation treatment unit of item 6, wherein: The catalytic unit is located in the exhaust system downstream of the thermal decomposition unit. 9. For example, the oxidation treatment unit in the scope of patent application No. 6, where an inert gas introduction unit is used to dilute the inert gas from the processing month to The gas discharged from the inside of Gu Yi, the inert gas introduction unit system e is also set to the discharge system located upstream of the thermal decomposition unit. -------- ^ --------- line—ttw. ( (Please read the back; please fill in this page for the details) (Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 26