4 6 ^i§2tlf.S c/008 A7 B7 經濟部智慧財產局員工消費合作杜印製 五、發明説明（I ) 本發明係有關於半導體元件之製造，特別是有關於發 光二極體電極之製造。更特定而言，本發明係有關於發光 二極體電極製造時’使做爲電極的金墊，同時而平衡地製 造形成於發光二極體的正負兩電極面上之一種製造方法。 發光二極體（LED， light-emitting diodes )的技 術進展已經使其用途更形廣泛’由早期的單色而低亮度的 電子信號顯示用途，逐步地發展到今日彩色大面積戶外顯 示幕，或製造成低消耗功率高亮度的交通信號顯示燈，甚 至照明燈具等用途。如習於本技藝之士所熟知的，發光二 極體係爲一種特別的二極體。在發光二極體之中，其p-n 接面之處電子與電洞的結合並不與一般二極體一樣地發出 熱形式的能量 '而是發出光形式的輻射3 圖1中顯示一典型發光二極體元件之橫截面示意圖。 此發光二極體10係爲一典型之磷化鎵-磷化鎵（Gap on GaP)發光二極體’其係爲GaP之N型底材11上嘉晶形 成N型GaP層12，再進一步磊晶形成P型之GaP層13 而形成的。P型GaP磊晶層Π與N型GaP磊晶層12之 間形成了二極體的P-n接面。 當發光二極體1〇的GaP之N型底材11 ’ N型GaP磊 晶層12，以及P型GaP磊晶層13分別依序在製程步驟之 中形成之後，此種P-n接面的構造便接著必須分別在其p 及η極的兩端製造其電極之接線墊，以供電性地連接至外 部的電源。 圖1的發光二極體係採用金（Au)做爲電極的材質。 3 ------^---^裝 I, (請先閲讀背面之注意事項4.¾¾本頁 訂 線 -il —^1 · 本紙張尺度適用中國國家棣準（CNS ) A4规格（2I0X297公釐） b95 1 5 Δ 7 1622twf.doc/〇〇8 _______B7 五、發明説明（v ) 如圖所示’在二極體10的p極一端，亦即，P型GaP嘉 晶層13的表面’可以製造一層金墊17，並在其n極一端， 亦即，GaP之Ν型底材11的表面，亦製造一或多個的金 墊。圖1的發光二極體’其η極的一端有兩個金墊18與19。 注意到在本發明的說明文字之中，發光二極體的ρ與η極 表面將分別被稱爲正與背面。 如同後面所將描述的，在二極體10的正背兩表面上製 造金墊之前，必須先製造歐姆式接觸（ohmic contact)。 在此’歐姆式接觸係提供做爲發光二極體兩電極的金質接 線墊與其對應的ρ與η結構層表面之間的電性接面。 爲了說明本發明之目的，下面將配合圖2Α與2Β簡要 地描述習知技術製造發光二極體電極金墊的製程步驟。由 於本發明係有關於發光二極體電極金墊之製造，故有關於 二極體ρ-η本體構造之製造在此便不予詳述。 首先，於圖2Α之中，如前所述，發光二極體ρ_η接 面構造本體2〇的正面上，先行形成了 Au與Be (鈹， beryllium)的合金層25，以便做爲二極體ρ極電極的歐 姆式接觸層。歐姆式接觸層25之中，Be的比例典型約在 1%的程度。另一方面，在發光二極體本體20的背面表面 上，則可以形成All與Ge (鍺，germanium )的合金層26， 以便做爲二極體η極電極的歐姆式接觸層。 做爲歐姆式接觸層的合金層25與26分別形成之後， 便接著可以再於其表面上形成對應的金層27與28。金屬 27與28可利用，例如，金的蒸鍍程序而形成。由於製造 本紙張尺度適用中國國家標率（CNS ) A4規格（2丨0X297公廣） 請先聞讀背面之注意事項寫本頁) 經濟部智慧財產局員工消費合作社印製 ---i---r--------r--裝------訂------線------r • I ! · HI - I , 4 6 9 5 Ί 5 1622twf.doc/008 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明説明（）） 發光二極體時，其晶圓通常是定置於正面向上，背面向下 的平置位置上，故雖然通常二極體本體20的正面與背面 是同時進行金的蒸鍍處理的，但其所形成的金層27與 28 ，亦分別稱爲正金與背金，並不會具有完全相同的厚 度。通常正金27的厚度會來得比背金28爲小。 在正金27與背金28形成之後，便接著可以利用微影 (photolithography)的技術，而使正金27與背金28， 以及兩者內層的歐姆式接觸層25與26分別成像，以便形 成發光二極體的電極金墊。習知技術之中，在進行此微影 製程步驟之前，標準的程序是必須先利用以水稀釋的氫氟 ;：2 酸（HF:H2O=l:\0)進行浸泡約10秒鐘的時間。否則，電 極金墊的後續成像步驟便無法順利進行。這是由於正金27 下方的歐姆接觸層25之內的Be，由於表面偏析（surface segregation)的作用，會逐漸地出現在正金27的表面上， 並被空氣中的氧氣逐漸氧化而形成氧化鈹（BeO )層。由 於BeO會阻擋被其所覆蓋的正金27之蝕刻，故必須先予 去除，以利進行金層27的蝕刻成像製程。 如此，在正金27與背金28形成，並以稀釋的HF浸 泡適當的時間之後，便接著可以在兩者的表面上先行覆以 一層的光阻層，並使用適當的光罩而使光阻層成像，以便 分別在預定爲電極的區域內製造出光阻遮罩曾37，38與 39，如圖2A中所顯示的情況。 由於製造成本上的考量，通常電極金墊的製造多是利 用濕式蝕刻的製程進行的。當正金27與背金28，以及其 請 先 閱 讀 背 $ I裝 頁 訂 線 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐：) 469515 1622twf.doc/008 ^ _____ B7 五、發明説明（山） 對應內層的歐姆式接觸層25與26利用，例如，碘化鉀（KI) 蝕刻液進行蝕刻時，如前所述，由於正背兩金層的厚度並 不一致，故習知技術利用同時對兩金層27與28，在適當 光阻圖像37， 38與39的遮蔽之下所進行蝕刻，將會造 成冃金飽别不足，或正金過度飩刻的情況。這是因爲，當 較薄的正金27被蝕刻到達恰當程度時，背金28由於其厚 度較大，故尙未達到飽刻完全的程度。相反的，若較厚的 月金2 8被持|買触刻到適當的程度’正金2 7由於其相對較 小厚度的緣故，便會遭受到過度蝕刻。由於正金27與背 金28乃是同時進行成像飽刻程序的，故其平衡控制即無 法在簡單的-f次同時進行鈾刻製程之中分開地予以控制。 圖2B中即以示意方式顯示此種不平衡正背金飽刻的情 形。如圖所不，當發光二極體的P電極金墊27已遭受過 度蝕刻時，其η電極金墊28與29則仍尙未完全完成其 蝕刻程序。 另一方面，當發光二極體的Ρ極一面遭受過度蝕刻的 情況時，由於ρ極表面上的金層27，除預定之電極接線 墊區域之外已被完全移除，故二極體本體構造10的ρ型 磊晶層或擴散層的晶面膜，即易於受到蝕刻作用的損傷。 當此晶面膜受到過度蝕刻的損傷時，便會影響到發光二極 體的發光特性。 因此，本發明之一目的即在於提供發光二極體電極金 墊的一種製造方法，可以同時達成對於二極體ρ.與η極金 墊的適恰蝕刻程度。 6 本紙張尺度適用中國國家条ϋ CNS) Α4規格（2丨0 χ π?公釐） -------^---..裝— / ? (請先閱讀背面之注意事項-S-.填寫本頁) 訂 線 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4695 15 A7 I622tWfd〇C/〇Q8_B7__ 五、發明説明（t ) 本發明之另一目的係在於提供發光二極體電極金墊的 一種製造方法，可以避免發光二極體的晶膜表面受損而影 響發光特性。 爲達成前述目的，本發明提供一種發光二極體之電極 金墊製程方法，其中該發光二極體包含有一 p-n接面，其 具有一 P極表面與一 η極表面，而該方法之步驟包含先於 Ρ與η極表面分別形成歐姆式接觸層，並再於歐姆式接觸 層上形成金層，覆蓋其對應之Ρ與η極歐姆式接觸層上。 之後在Ρ與η極金層表面上形成光阻，並進行成像，以分 別形成Ρ與η電極金墊之蝕刻遮蔽層。再對η極金層進行 一次限定程度之蝕刻處理，以縮減其厚度到與Ρ極金層相 當之程度，之後再同時對Ρ極金層與η極金層曝露於電極 金墊光阻層外的部份進行蝕刻處理，以將Ρ極與η極表面 上的電極金墊以外的金移除。接著去除Ρ與η電極金墊之 鈾刻遮蔽層，以完成電極金墊之製造。 本發明將配合所附圖式，利用較佳實施例進行詳細說 明。注意到在各圖式之中，各相關元件尺度並未以精確之 相對比例顯現，其中的元件尺度係以表現元件架構的空間 關係爲主要考量。附圖之中： 圖1爲一示意圖，其中顯示一種典型的發光二極體之 橫截面構造； 圖2Α與2Β顯示習知技術製造發光二極體電極時所發 生的ρ與η電極金墊之過度蝕刻與蝕刻不足的不平衡情 形；與 7 本紙張尺度適用中國國家標準（CNS > Α4規格（2Ι0Χ297公釐） 469515 λ 7 1622tWf-d〇C/〇Q8 __Β7____ 五、發明説明（d ) 圖3A至3D顯示依據本發明製造發光二極體電極金墊 方法之一較佳實施例，其製程步驟之中，發光二極體元件 於選定製程階段之橫截面圖。 下面配合附圖3A至3D而說明本發明之製造發光二極 體之電極金墊方法的一較佳實施例。如同習於本技藝之士 所可以瞭解的，此等發光二極體之製造，係在一片晶圓上 以整批製造的方式進行的。 首先，於圖3A之中以參考標號40大致標示的一個發 光二極體的本體，其可具有，例如，與圖1之磷化鎵-磷 化鎵磊晶發光二極體相似的p-n接面構造者，可於其P與 η極表面上，分別先形成歐姆式接觸層。 在此實施例之中，每一單位的發光二極體40的Ρ極需 製造，例如，一個電極金墊，而其η極則需製造，例如’ 二個電極金墊。爲製造發光二極體的此些電極金墊， 於其ρ與η極表面上，分別形成歐姆式接觸層。發光二極 體40之ρ極之歐姆式接觸層45可由，例如Au與Be的合' 金形成，其中Be在合金中的比例約爲1 %。另一方面’ 其η極之歐姆式接觸層46則可由，例如，Au與<3e的合 金所形成。 之後，再於發光二極體的形成有歐姆式接觸層的p與 η極兩側表面上，分別地形成Au層，覆蓋於其對應之歐 姆式接觸層上。 在發光二極體的P與η極兩側表面上所分別.形成的AU 層47與48，可利用，例如，蒸鍍的方式，將Au同時地 8 (請先閱讀背面之注意事項再填湾本寅) •裝. ΪΤ· 經濟部智慧財產局員工消骨合作社印製 本紙張尺度適用中國國家榡牟（CNS ) Μ規格（210乂297公痠） A7 B7 〇9515 1622twf.doc/008 五、發明説明（1) 鍍在二極體p與η極兩側的歐姆式接觸層45與46之表面 上。 接著，在發光二極體的ρ與η極Au層上形成光阻， 並進行成像，形成電極金墊之蝕刻遮蔽層。 電極金墊之蝕刻光阻可利用習知的方式製造，分別在 發光二極體的ρ與η極面上形成ρ電極光阻層57，以及η 電極光阻層58與59。注意到蝕刻光阻層57，58與59 係分別與發光二極體的電極金墊預定形成區對準，因而形 成如圖3Α中所顯示的構造。 接著，對發光二極體的η極Au層進行一次限定程度 之蝕刻處理，以縮減其厚度到與\極Au層相當之程度。 如圖3B中所顯示的，此時可對較厚的η極Au層48 進行一次厚度縮減的蝕刻處理。這可利用使整個半導體元 件接受一次，例如，以KI的蝕刻液所進行的，主要針對η 極Au層48進行的飩刻程序，而使其厚度縮減到與ρ極Au 層47之厚度相當的程度。此時，如圖中所顯示的情形， 由於只有η極Au層48受到蝕刻液的蝕刻，故在其表面上 即會形成凹陷空間，如圖3B中以參考標號5〇所標示之部 份。當此有限程度的蝕刻程序完成時，η極Au層48在其 凹陷處5〇的厚度係與P極Au層47之厚度相當。 當整個元件接受KI的蝕刻之前，由於前述之偏析作用 的現象，由Au與Be的合金所構成的歐姆式接觸層45內 之Be，已逐漸出現在ρ極Au層47之表面，並已被氧化 而形成BeO。如此一來，在相對較薄的P極Au層47表面 9 - ...... nn ^ n^i n . i— (請先閲讀背面之注意事項再_矿寫本頁) -訂· 線 經濟部智慧財產局S工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 469515 經濟部智慧財產局員工渭費合作社印製 1622twidoc/008 Λ/ ______B7_______ 五、發明説明（3 ) 上所形成BeO膜（圖中未顯示；！，即可以做爲暫時性的蝕 刻阻擋層’以便先利用諸如KI的蝕刻液而對η極Au層48 進行選擇性的蝕刻。此時只有較厚的η極Au層48會受到 有效的蝕刻，將其厚度減低到與p極Αιι層47相當的程度。 爲了控制對η極Au層48的蝕刻量，蝕刻進行的持續時間 是爲一種有效的控制參數。適當地控制此步驟的蝕刻時 間，便可以將η極Au層48的厚度縮減到與p極Au層47 相當的程度。在實際操作的情況之下，η極Au層48接受 蝕刻縮減之後的整個元件，可以利用，例如，去離子水進 行沖洗’以利後續製程的繼續進行。 其後，可將p極Au層上的BeO層去除。 這可以利用，例如，與習知技術之製程相似的方法， 將整個元件浸入以水稀釋的HF溶液中，並維持浸泡足夠 的時間，以將p極Au層47之上的BeO層去除掉。在實 際的操作情況之下，以大約:1〇倍稀釋量的HF溶液而言， 只須浸泡數秒鐘即可將BeO層除去。經HF溶液處理過的 元件，此時便可以利用，例如，去離子水進行沖洗，以利 後續製程的繼續進行。 接著，同時對P極Au層與η極Au層曝露於電極金墊 光阻層外的部份進行鈾刻處理，以將二極體之p極與η極 表面上的電極金墊以外的金移除。 這可利用使整個半導體元件再接受一次，例如，以ΚΙ 的蝕刻液所進行的，同時對Ρ極Au層47與η極Au層48 所進行的蝕刻程序，而如圖3C所顯示的，將光阻層57， 10 本紙張尺度適心國国家標準（CNS ) Α4ϋ( 2丨GX297公" (請先閱讀背面之注意事項再墙寫本頁) '裝. 訂 線 4695 1 5 1622twf,doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（θ) 58與59所遮蔽部份以外的金層蝕刻掉。如此即可分別形 成圖中的p電極金塑47 ’以及n電極金墊48與49。由 於在此步驟進行之前’ ρ極Au層47與η極Au層48已先 被調整到相當的厚度’故兩Au層47與48的同時進行的 蝕刻處理，便可以在適當的控制下，同時達到完成的階段。 此時，當兩歐姆接觸層45與46的蝕刻亦已適當完成時’ 即可以停止蝕刻的處理’以免傷及發光二極體的P與n極 表面晶膜。此時便可以再利用，例如’去離子水進行沖洗’ 以利後續製程的繼續進行° 其後，可將ρ與n電極金墊之成像光阻層去除掉° 此時，圖3C中的光阻層57，58與59，即可利用習 知之方式予以移除，因而可以形成圖3D中所顯示的發光 二極體構造，其中包含了完整的電極接墊’以便後續的包 裝製程可以順利進行。後續之製程步驟因不屬本發明之範 圍，故在此即不予敘述，其亦應屬於熟習於本技藝之士所 熱知者。 如此，前述本發明製造發光二極體電極金墊方法之實 施例中，其與習知技術之製程相較之下，雖多出一道限定 程度的金屬蝕刻處理程序’但其最終效果卻非習知技術所 能達成者。何況，本發明之多出的限定程度蝕刻處理程序 亦不須牽涉到任何額外的前置與後續製程，且在實際操作 的情況之下，其處理所需時間亦極短，僅在數秒至十數秒 的程度。故在考量其平均而同時達成的正背金蝕刻，以及 其不傷及二極體表面晶膜的效果之下’本發明方法其總體 11 本紙張尺度適用中國國家標準（CNS ) A4現格（2丨0X297公釐） - - - I- r - —4— I I -- (請先閲讀背面之注意事項再与寫本頁) 訂 線 A7 B7 doc/008 五、發明説明（) 功效顯係比習知技術的方法多有增進。 雖然本發明已利用一較佳實施例而揭示說明如上，然 其i兌明文字並非用以限定本發明。任何熟習本技藝之士， 在不脫出於本發明之精神範圍的情況下，當可作各種更動 與變化’其皆應屬於本發明列明於後列申請專利範圍乙節 中之文字所界定範疇。 ^^^^1 n nr^n In ^11 ^^^1 n ' (請先閲讀背面之注意事項再#寫本頁) -IT- 線 經濟部智慧財產局員工消費合作社印奴 本紙張尺度適用中國國家標率（CNS ) A4規格（210X297公釐）4 6 ^ i§2tlf.S c / 008 A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, consumer cooperation, printed by Du V. Description of the Invention (I) The present invention relates to the manufacture of semiconductor components, and in particular to light-emitting diode electrodes Manufacture. More specifically, the present invention relates to a method for manufacturing a light-emitting diode electrode by using a gold pad as an electrode and simultaneously and balancedly forming the positive and negative electrode surfaces of the light-emitting diode. The technological progress of light-emitting diodes (LEDs) has made it more versatile. From the early monochrome and low-brightness electronic signal display applications, it has gradually developed to today's color large-area outdoor display screens, or Manufactured into traffic signal display lamps with low power consumption and high brightness, and even lighting fixtures. As is well known to those skilled in the art, a light emitting diode system is a special type of diode. In a light-emitting diode, the combination of electrons and holes at its pn junction does not emit energy in the form of heat like ordinary diodes, but emits radiation in the form of light. 3 Figure 1 shows a typical luminescence A schematic cross-sectional view of a diode element. The light-emitting diode 10 is a typical gallium phosphide-gallium phosphide (Gap on GaP) light-emitting diode. It is a N-type substrate 11 formed of GaP, and an N-type GaP layer 12 is formed. The epitaxial layer is formed by forming a P-type GaP layer 13. A P-n junction of the diode is formed between the P-type GaP epitaxial layer Π and the N-type GaP epitaxial layer 12. After the N-type substrate 11 ′ of N-type GaP epitaxial layer 12 and P-type GaP epitaxial layer 13 of the light-emitting diode 10 are sequentially formed in the process steps, the structure of this Pn junction Then, the terminal pads of its electrodes must be manufactured at both ends of its p and n poles in order to be electrically connected to an external power source. The light-emitting diode system of FIG. 1 uses gold (Au) as a material of an electrode. 3 ------ ^ --- ^ Package I, (Please read the note on the back 4.¾¾ Thread on this page -il — ^ 1 · This paper size is applicable to China National Standard (CNS) A4 specifications ( 2I0X297 mm) b95 1 5 Δ 7 1622twf.doc / 〇〇8 B7 V. Description of the invention (v) As shown in the figure, 'at the p-pole end of the diode 10, that is, the P-type GaP Jia crystal layer 13 The surface can be made with a layer of gold pad 17, and one or more gold pads can also be made on one end of its n-pole, that is, on the surface of GaP's N-type substrate 11. The light-emitting diode of FIG. There are two gold pads 18 and 19 at one end. Note that in the description of the present invention, the surfaces of the ρ and η poles of the light-emitting diode will be referred to as the front and back, respectively. As will be described later, Before manufacturing gold pads on the front and back surfaces of the pole body 10, an ohmic contact must be made. Here, the 'ohmic contact system' provides a gold wiring pad as the two electrodes of the light emitting diode and its corresponding ρ And the surface of the η structure layer. In order to illustrate the purpose of the present invention, the conventional technology will be briefly described with reference to FIGS. 2A and 2B. The manufacturing steps of the gold pad of the light-emitting diode electrode. Since the present invention relates to the manufacture of the gold pad of the light-emitting diode electrode, the manufacturing of the body of the diode ρ-η will not be described in detail here. First, In FIG. 2A, as mentioned above, on the front side of the light emitting diode ρ_η junction structure body 20, an alloy layer 25 of Au and Be (beryllium, beryllium) is formed in advance to serve as a diode ρ electrode. The ohmic contact layer of the electrode. The proportion of Be in the ohmic contact layer 25 is typically about 1%. On the other hand, on the back surface of the light emitting diode body 20, All and Ge (germanium) can be formed. Germanium) alloy layer 26 so as to serve as an ohmic contact layer for the diode n-electrode. After the alloy layers 25 and 26 as the ohmic contact layer are formed respectively, a corresponding layer can then be formed on its surface. Gold layers 27 and 28. Metals 27 and 28 can be used, for example, formed by the evaporation process of gold. Since this paper is manufactured in accordance with China National Standards (CNS) A4 specifications (2 丨 0X297), please read the back (Notes on this page) Intellectual Property of the Ministry of Economic Affairs Printed by Employee Consumer Cooperatives --- i --- r -------- r--install -------- order ------ line ------ r • I! · HI-I, 4 6 9 5 Ί 5 1622twf.doc / 008 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention ()) When a light-emitting diode is used, its wafer is usually set on the front side. The back surface is in a flat position downward, so although the front and back surfaces of the diode body 20 are usually subjected to gold evaporation at the same time, the gold layers 27 and 28 formed by them are also referred to as positive gold and back, respectively. Gold does not have exactly the same thickness. Normally the thickness of gold 27 will be smaller than that of gold 28. After the gold 27 and the back gold 28 are formed, the photolithography technology can be used to image the gold 27 and the back gold 28, and the ohmic contact layers 25 and 26 of the inner layer of the two respectively, so that An electrode gold pad forming a light emitting diode. Among the conventional techniques, before carrying out this lithography process step, the standard procedure is to use hydrofluoric acid diluted with water :: 2 acid (HF: H2O = l: \ 0) for about 10 seconds. . Otherwise, the subsequent imaging steps of the electrode gold pad cannot be performed smoothly. This is because Be in the ohmic contact layer 25 under the positive gold 27 will gradually appear on the surface of the positive gold 27 due to surface segregation, and will be gradually oxidized by oxygen in the air to form oxidation. Beryllium (BeO) layer. Because BeO blocks the etching of the gold 27 covered by it, it must be removed first to facilitate the etching and imaging process of the gold layer 27. In this way, after the gold 27 and the back gold 28 are formed and immersed in diluted HF for an appropriate time, then the surface of the two can be covered with a photoresist layer first, and a suitable photomask can be used to make the light The resist layer is imaged so that photoresist masks 37, 38, and 39 are manufactured in the areas intended for the electrodes, respectively, as shown in FIG. 2A. Due to manufacturing cost considerations, the manufacturing of electrode gold pads is usually performed by a wet etching process. Dangzheng 27 and back 28, and please read the back of the page. I Binding page. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm :) 469515 1622twf.doc / 008 ^ _____ B7 5 2. Description of the invention (mountain) The ohmic contact layers 25 and 26 corresponding to the inner layer are used, for example, when the potassium iodide (KI) etchant is used for etching, as described above, because the thicknesses of the two gold layers on the front and back are not the same, it is known The technology utilizes simultaneous etching of the two gold layers 27 and 28 under the appropriate photoresist images 37, 38, and 39, which will cause insufficient gold filling or excessively engraved gold. This is because, when the thin positive gold 27 is etched to an appropriate level, the back gold 28 is not sufficiently full because of its large thickness. On the contrary, if the thicker moon gold 2 8 is held, the buying touch is etched to an appropriate level, and the positive gold 2 7 will suffer from over-etching because of its relatively small thickness. Because the gold 27 and back gold 28 are simultaneously imaged and engraved, the balance control cannot be controlled separately in a simple -f simultaneous uranium engraving process. Fig. 2B shows the situation of such imbalanced positive gold engraving in a schematic way. As shown in the figure, when the P-electrode gold pad 27 of the light-emitting diode has been over-etched, its n-electrode gold pads 28 and 29 have not yet completed their etching procedures. On the other hand, when the P-electrode side of the light-emitting diode is over-etched, the gold body 27 on the surface of the p-electrode has been completely removed except for the predetermined electrode wiring pad area, so the diode body The crystal face film of the p-type epitaxial layer or the diffusion layer of structure 10 is easily damaged by etching. When this crystal mask is damaged by over-etching, it will affect the light-emitting characteristics of the light-emitting diode. Therefore, an object of the present invention is to provide a manufacturing method of a gold pad for a light emitting diode electrode, which can achieve an appropriate degree of etching for the diode ρ. And η pole gold pads at the same time. 6 The size of this paper is applicable to China National Standards (CNS) Α4 size (2 丨 0 χ π? Mm) ------- ^ --- .. installed— /? (Please read the precautions on the back-S first -.Fill in this page) Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumers ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by 4695 15 A7 I622tWfd〇C / 〇Q8_B7__ 5. Description of the invention (t) Another purpose of the present invention The invention relates to a manufacturing method for providing a gold pad of a light emitting diode electrode, which can prevent the surface of the crystal film of the light emitting diode from being damaged and affect the light emitting characteristics. In order to achieve the foregoing object, the present invention provides a method for manufacturing an electrode gold pad of a light emitting diode, wherein the light emitting diode includes a pn junction having a P-pole surface and an η-pole surface, and the steps of the method include First, an ohmic contact layer is formed on the surfaces of the P and η electrodes, respectively, and then a gold layer is formed on the ohmic contact layer to cover the corresponding P and η pole ohmic contact layers. A photoresist is then formed on the surface of the P and η electrode gold layers, and imaging is performed to form an etching masking layer for the P and η electrode gold pads, respectively. The η electrode gold layer is then subjected to a limited degree of etching to reduce its thickness to a level equivalent to that of the P electrode gold layer, and then the P electrode gold layer and the η electrode gold layer are simultaneously exposed to the electrode gold pad photoresist layer. Etching is performed to remove gold other than the electrode gold pads on the surface of the P and n electrodes. Next, the uranium-etched shielding layer of the P and η electrode gold pads is removed to complete the fabrication of the electrode gold pads. The present invention will be described in detail using preferred embodiments in conjunction with the accompanying drawings. It is noted that in the drawings, the dimensions of the relevant components are not shown in precise relative proportions, and the dimensions of the components are mainly based on the spatial relationship of the component architecture. In the drawings: FIG. 1 is a schematic diagram showing a typical cross-sectional structure of a light-emitting diode; FIGS. 2A and 2B show the ρ and η electrode gold pads that occur when a conventional technique is used to manufacture a light-emitting diode electrode. Imbalance between over-etching and under-etching; and 7 paper sizes are subject to Chinese national standards (CNS > A4 size (2Ι0 × 297 mm) 469515 λ 7 1622tWf-d〇C / 〇Q8 __Β7 ____ 5. Description of the invention (d) 3A to 3D show a preferred embodiment of a method for manufacturing a gold pad of a light-emitting diode electrode according to the present invention, in the process steps, the cross-sectional views of the light-emitting diode element at the selection process stage are shown below. With reference to the accompanying drawings 3A to 3D A preferred embodiment of the method for manufacturing the electrode gold pad of the light emitting diode of the present invention is explained. As can be understood by those skilled in the art, the manufacture of these light emitting diodes is based on a wafer to First, a body of a light-emitting diode generally indicated by reference numeral 40 in FIG. 3A may have, for example, a gallium phosphide-gallium phosphide epitaxial light emission as shown in FIG. 1. Dipole Those with similar pn junction structures may first form ohmic contact layers on the surfaces of their P and η poles respectively. In this embodiment, the P pole of each unit of the light emitting diode 40 needs to be manufactured, for example, One electrode gold pad, and its η electrode need to be manufactured, for example, two electrode gold pads. In order to manufacture these electrode gold pads for light-emitting diodes, ohmic contact layers are formed on the surfaces of ρ and η electrodes, respectively. The ohmic contact layer 45 of the p-pole of the light-emitting diode 40 may be formed of, for example, an alloy of Au and Be, wherein the proportion of Be in the alloy is about 1%. On the other hand, its ohmic contact layer of the n-pole 46 can be formed of, for example, an alloy of Au and < 3e. Thereafter, Au layers are formed on both surfaces of the p and η electrodes of the light emitting diode on which the ohmic contact layer is formed, respectively, and cover them. Corresponding to the ohmic contact layer. The AU layers 47 and 48 formed on the two surfaces of the P and η electrodes of the light-emitting diode, respectively, can be used, for example, the method of vapor deposition, to Au at the same time 8 (please Please read the notes on the back before filling in this book.) • Packing. ΪΤ · Employees of Intellectual Property Bureau, Ministry of Economic Affairs The paper size printed by the bone-eliminating cooperative is applicable to China's national standard (CNS) M specification (210 乂 297 male acid) A7 B7 〇9515 1622twf.doc / 008 V. Description of the invention (1) Plating on the p and η poles of the diode On both surfaces of the ohmic contact layers 45 and 46. Next, a photoresist is formed on the ρ and η Au layers of the light-emitting diode, and an image is formed to form an etching shielding layer of the electrode gold pad. Etching photoresist can be manufactured in a conventional manner, and a ρ electrode photoresist layer 57 and η electrode photoresist layers 58 and 59 are formed on the ρ and η pole surfaces of the light-emitting diode, respectively. 58 and 59 are respectively aligned with the predetermined formation regions of the electrode gold pads of the light-emitting diode, thereby forming a structure as shown in FIG. 3A. Next, the eta-electrode Au layer of the light-emitting diode is subjected to a limited degree of etching treatment to reduce its thickness to a level equivalent to that of the Au-electrode layer. As shown in FIG. 3B, at this time, the thicker n-electrode Au layer 48 may be subjected to a thickness reduction etching process. This can be done by subjecting the entire semiconductor element once, for example, using an etching solution of KI to the etch process for the n-electrode Au layer 48, so that the thickness is reduced to a thickness equivalent to that of the p-electrode Au layer 47. degree. At this time, as shown in the figure, since only the n-pole Au layer 48 is etched by the etchant, a recessed space will be formed on the surface, as shown by the reference numeral 50 in FIG. 3B. When this limited degree of etching process is completed, the thickness of the n-pole Au layer 48 at its depression is equivalent to the thickness of the p-pole Au layer 47. Before the entire element was etched by KI, due to the aforementioned segregation phenomenon, Be in the ohmic contact layer 45 composed of an alloy of Au and Be has gradually appeared on the surface of the p-pole Au layer 47, and has been BeO is formed by oxidation. As a result, on the surface of the relatively thin P-pole Au layer 47 9-...... nn ^ n ^ in. I— (Please read the precautions on the back before writing this page)-Order · Line Printed by S Industrial Consumer Cooperatives of the Ministry of Economic Affairs and Intellectual Property Cooperatives. The paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 469515 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs of the Wei Fei Cooperative 1622twidoc / 008 Λ / ______B7_______ 5. Description of the invention (3) The BeO film (not shown in the figure;!), That is, it can be used as a temporary etching stopper layer, in order to first use an etching solution such as KI to selectively etch the n-pole Au layer 48. At this time Only the thicker eta-electrode Au layer 48 will be effectively etched, reducing its thickness to a level equivalent to that of the p-pole Au layer 47. In order to control the amount of etching of the eta-electrode Au layer 48, the duration of the etching is one Effective control parameters. By properly controlling the etching time in this step, the thickness of the n-pole Au layer 48 can be reduced to a level equivalent to that of the p-pole Au layer 47. In the case of actual operation, the n-pole Au layer 48 accepts The entire component after etching is reduced can benefit Rinse with, for example, deionized water to facilitate subsequent processes. Thereafter, the BeO layer on the p-pole Au layer can be removed. This can be done, for example, using a method similar to the conventional technology The entire element is immersed in a HF solution diluted with water and maintained for a sufficient time to remove the BeO layer above the p-pole Au layer 47. Under actual operating conditions, the dilution is about: 10 times the amount of In the case of HF solution, it only needs to be immersed for a few seconds to remove the BeO layer. At this time, the components treated with the HF solution can be used, for example, to rinse with deionized water to facilitate the subsequent process. Then, at the same time The portions of the P-pole Au layer and the η-pole Au layer that are exposed outside the photoresist layer of the electrode gold pad are uranium-etched to remove gold other than the electrode gold pad on the surface of the p-pole and the n-pole of the diode. This can be done by subjecting the entire semiconductor element to another acceptance, for example, using an etch solution of KI, and simultaneously performing an etching process on the p-electrode Au layer 47 and the n-electrode Au layer 48, and as shown in FIG. 3C, Photoresist layer 57, 10 paper sizes Standard (CNS) Α4ϋ (2 丨 GX297) " (Please read the precautions on the back before writing this page on the wall) 'Packing. Thread 4695 1 5 1622twf, doc / 008 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Preparation 5. Description of the invention (θ) The gold layers other than the shaded parts of 58 and 59 are etched away. In this way, the p-electrode gold-plastic 47 'and the n-electrode gold pads 48 and 49 can be formed respectively. Previously, the ρ-pole Au layer 47 and the η-pole Au layer 48 have been adjusted to a considerable thickness first, so the simultaneous etching process of the two Au layers 47 and 48 can reach the completion stage at the same time under appropriate control. At this time, when the etching of the two ohmic contact layers 45 and 46 has been properly completed, 'the etching process can be stopped' so as not to damage the P and n surface crystal films of the light emitting diode. At this time, it can be reused, such as 'rinsing with deionized water' to facilitate the subsequent process. ° After that, the photoresist layer of the gold pad of ρ and n electrodes can be removed. At this time, the light in Figure 3C The resistive layers 57, 58 and 59 can be removed in a conventional manner, so that the light-emitting diode structure shown in FIG. 3D can be formed, which includes a complete electrode pad, so that the subsequent packaging process can proceed smoothly. . The subsequent process steps are not within the scope of the present invention, so they are not described here, and they should also belong to those who are familiar with this technology. Thus, in the foregoing embodiment of the method for manufacturing a gold pad of a light-emitting diode electrode of the present invention, compared with the conventional technology process, although a limited degree of metal etching process is added, the final effect is not customary. Know what the technology can do. Moreover, the additional limited degree of etching process of the present invention does not need to involve any additional pre- and subsequent processes, and under actual operating conditions, the processing time is extremely short, only a few seconds to ten A few seconds. Therefore, taking into account the average and positive back gold etching achieved at the same time, and the effect of not harming the crystal film on the surface of the diode, the method of the present invention is generally 11 paper standards applicable to the Chinese National Standard (CNS) A4. 2 丨 0X297mm)---I- r-—4— II-(Please read the precautions on the back before writing this page) Thread A7 B7 doc / 008 V. Description of the invention There are many improvements in the methods of knowing technology. Although the present invention has been disclosed and described as above using a preferred embodiment, its i-clear text is not intended to limit the present invention. Any person skilled in the art can make various changes and changes without departing from the scope of the spirit of the present invention, which should all fall within the scope defined by the text of the present invention listed in section B of the patent application scope listed below. . ^^^^ 1 n nr ^ n In ^ 11 ^^^ 1 n '(Please read the precautions on the back before #writing this page) -IT- Intellectual Property Bureau, Ministry of Economic Affairs, Employee Consumption Cooperatives China National Standards (CNS) A4 specifications (210X297 mm)