KR101077769B1 - Luminescence device and method of manufacturing the same - Google Patents
Luminescence device and method of manufacturing the same Download PDFInfo
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- KR101077769B1 KR101077769B1 KR1020040113116A KR20040113116A KR101077769B1 KR 101077769 B1 KR101077769 B1 KR 101077769B1 KR 1020040113116 A KR1020040113116 A KR 1020040113116A KR 20040113116 A KR20040113116 A KR 20040113116A KR 101077769 B1 KR101077769 B1 KR 101077769B1
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- transparent electrode
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Abstract
The present invention relates to a light emitting device and a method of manufacturing the same, which comprises forming an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a transparent electrode layer on a substrate, and forming irregularities having a predetermined roughness on the surface of the transparent electrode layer. Exposing the N-type semiconductor layer by removing the transparent electrode layer, the P-type semiconductor layer, and the active layer in a predetermined region; and forming an electrode on the exposed N-type semiconductor layer and the transparent electrode layer. A method of manufacturing a light emitting device, comprising: a sapphire substrate, an N-type semiconductor layer formed on the sapphire substrate, an active layer, a P-type semiconductor layer and a transparent electrode layer sequentially formed on a predetermined region of the N-type semiconductor layer, and the N The N-type semiconductor layer including an electrode formed on each of the semiconductor layer and the transparent electrode, the transparent electrode layer and / or the active layer is not formed To provide a light emitting device having a predetermined roughness.
As a result, irregularities having a predetermined roughness may be formed on the transparent electrode surface and the N-type semiconductor layer surface of the light emitting device to improve external quantum efficiency of the light emitting device.
Light emitting element, transparent electrode, roughness, surface irregularities treatment, gallium nitride, ion treatment
Description
1A to 1D are cross-sectional views illustrating a method of manufacturing a light emitting device according to a conventional process.
2A to 2E are cross-sectional views illustrating a method of manufacturing a light emitting device according to the present invention.
<Explanation of symbols for the main parts of the drawings>
10, 110: substrate 20: N-GaN layer
30, 130: active layer 40: P-GaN layer
50, 150:
120: N-type semiconductor layer 140: P-type semiconductor layer
155 photosensitive film pattern
The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly, to surface treatment of a transparent electrode and an N semiconductor layer.
Conventional light emitting devices sequentially form an N-GaN layer, an active layer and a P-GaN layer on a sapphire substrate. At this time, since the sapphire substrate under the N-GaN layer is an insulator, a portion of the active layer and the P-GaN layer on the N-GaN layer are etched to expose the N-GaN layer and connected to an external power source. In addition, since the resistance component of the P-GaN layer is very large, a transparent electrode was formed to uniformly apply voltage to the upper surface of the P-GaN layer.
1A to 1D are cross-sectional views illustrating a method of manufacturing a light emitting device according to a conventional process.
Referring to FIG. 1A, an N-
Referring to FIG. 1B, a portion of the N-
Referring to FIG. 1C, a
Referring to FIG. 1D, an
Conventional light emitting devices manufactured as described above have very low external quantum efficiency of 10% or less. This causes photons (light) generated in the
Accordingly, many studies have been conducted to improve external quantum efficiency of such light emitting devices.
Accordingly, in order to solve the above problems, the present invention provides a predetermined roughness on the surface of the transparent electrode to increase the quantum efficiency of the light emitting device, and gives the roughness on the exposed N-type semiconductor layer to effectively increase the quantum efficiency. It is an object of the present invention to provide a light emitting device and a method of manufacturing the same.
Forming an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a transparent electrode layer on a substrate according to the present invention, forming irregularities having a predetermined roughness on a surface of the transparent electrode layer, and forming the transparent electrode layer in a predetermined region And removing the P-type semiconductor layer and the active layer to expose the N-type semiconductor layer and forming an electrode on the exposed N-type semiconductor layer and the transparent electrode layer. do.
Unevenness is placed on the surface of the transparent electrode layer through ion treatment using the ions. In addition, ion treatment is performed using Ar ions so that the roughness of the unevenness is 50 to 50000 Pa. The exposing the N-type semiconductor layer by removing the transparent electrode layer, the P-type semiconductor layer, and the active layer in a predetermined region may include forming a predetermined photoresist pattern on the transparent electrode layer and etching the photoresist pattern. Performing a first etching process using a mask to remove a portion of the transparent electrode layer; and performing a second etching process using the photoresist pattern as an etching mask to remove the transparent electrode layer, the P-type semiconductor layer, and the active layer. And removing the photoresist pattern.
The present invention also provides a method for forming an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a transparent electrode layer on a substrate, removing a portion of the transparent electrode layer in a predetermined region, and remaining in the region where the portion is removed. Removing the P-type semiconductor layer and the active layer under the transparent electrode layer and the active layer to expose the N-type semiconductor layer, forming irregularities having a predetermined roughness on the N-type semiconductor layer surface, and the exposed N-type It provides a method of manufacturing a light emitting device comprising forming an electrode on the semiconductor layer and the transparent electrode layer.
The present invention also provides a sapphire substrate, an N-type semiconductor layer formed on the sapphire substrate, an active layer sequentially formed on a predetermined region of the N-type semiconductor layer, a P-type semiconductor layer and a transparent electrode layer, and the N-type semiconductor layer; A light emitting device including an electrode formed on the transparent electrode and having a predetermined roughness on a surface of the N-type semiconductor layer in which the transparent electrode layer and / or the active layer is not provided is provided. At this time, the roughness is preferably 50 to 50000 Pa.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Like numbers refer to like elements in the figures.
2A to 2E are cross-sectional views illustrating a method of manufacturing a light emitting device according to the present invention.
Referring to FIG. 2A, the N-
The
In addition, an InGaN film is used as the
In addition, the present invention is not limited to the above-described structure, and various layers may be further formed between each layer according to the characteristics of the light emitting device. That is, a separate buffer layer may be further formed between the N-type semiconductor layer and the substrate. Moreover, it can also be comprised by the layer which consists of many films as an active layer. Indium Tin Oxide (ITO) is used as the transparent electrode.
Referring to FIG. 2B, predetermined irregularities are applied to the surface of the
As described above, by providing predetermined irregularities on the surface of the
2C and 2D, a portion of the N-
In order to expose a portion of the lower N-
Thereafter, a part of the exposed
A portion of the N-
As described above, the surface of the exposed N-
Referring to FIG. 2E, after removing the photoresist pattern, a predetermined cleaning process is performed. Thereafter, the
The light emitting device of the present invention is not limited to the above-described process steps, and various process steps can be changed. That is, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a transparent electrode are formed, a roughness is applied to the surface of the transparent electrode, and a part of the N-type semiconductor layer is exposed by etching a part of the transparent electrode, the P-type semiconductor layer, and the active layer. Next, an electrode may be formed on the exposed N-type semiconductor layer and the transparent electrode, respectively. This can improve the quantum efficiency of about 10%. In addition, an N-type semiconductor layer, an active layer, a P-type semiconductor layer and a transparent electrode are formed, and a portion of the transparent electrode in a predetermined region is removed to leave a transparent electrode having a thickness of several tens of 에 in a predetermined region, The lower portion of the P-type semiconductor layer and the active layer may be etched to expose a portion of the N-type semiconductor layer, and then electrodes may be formed on the exposed N-type semiconductor layer and the transparent electrode, respectively. In addition, an N-type semiconductor layer, an active layer, a P-type semiconductor layer and a transparent electrode are formed, and a portion of the N-type semiconductor layer is exposed by etching a portion of the transparent electrode, the P-type semiconductor layer and the active layer, and then exposing the exposed N-type. After roughening the surface of the semiconductor layer, the electrodes may be formed on the transparent electrodes, respectively. As a result, light emission efficiency of about 50% can be improved. It is preferable to deposit or grow a reflective metal layer having a thickness of 0.001 μm to 2.0 μm on the back surface of the ITO of the present invention.
As described above, the present invention can improve the external quantum efficiency of the light emitting device by forming irregularities having a predetermined roughness on the transparent electrode surface of the light emitting device.
In addition, the quantum efficiency of the light emitting device can be improved by forming irregularities having a predetermined roughness on the surface of the N-type semiconductor layer so that light can be emitted from the N-type semiconductor layer.
Claims (7)
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KR1020040113116A KR101077769B1 (en) | 2004-12-27 | 2004-12-27 | Luminescence device and method of manufacturing the same |
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KR1020040113116A KR101077769B1 (en) | 2004-12-27 | 2004-12-27 | Luminescence device and method of manufacturing the same |
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KR1020100053820A Division KR101138950B1 (en) | 2010-06-08 | 2010-06-08 | Luminescence device |
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KR101077769B1 true KR101077769B1 (en) | 2011-10-27 |
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Cited By (1)
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WO2021015404A1 (en) * | 2019-07-25 | 2021-01-28 | 한국전기연구원 | Microwave band induction heating device |
Families Citing this family (7)
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KR100832070B1 (en) * | 2006-08-10 | 2008-05-27 | 삼성전기주식회사 | GaN type light emitting diode device |
KR100820546B1 (en) | 2006-09-07 | 2008-04-07 | 엘지이노텍 주식회사 | Semiconductor light-emitting device and Manufacturing method thereof |
KR100826287B1 (en) * | 2007-08-23 | 2008-04-30 | (주)에피플러스 | Light emitting diode and method of manufacturing the same |
KR20090115906A (en) * | 2008-05-05 | 2009-11-10 | 송준오 | Methods of surface texture for group 3-nitride semiconductor light emitting diode |
KR100936058B1 (en) * | 2008-05-20 | 2010-01-08 | 고려대학교 산학협력단 | Gallium nitride light emitting diode and method for manufacturing the same |
KR20110040350A (en) * | 2009-10-14 | 2011-04-20 | 주식회사 에피밸리 | Iii-nitride semiconductor light emitting device |
KR101047739B1 (en) * | 2010-04-28 | 2011-07-07 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the same, light emitting device package and lighting system including the same |
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JP2000196152A (en) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | Semiconductor light emitting device and manufacture thereof |
JP2002043620A (en) * | 2000-07-27 | 2002-02-08 | Shiro Sakai | Gallium nitride compound semiconductor element and method for forming electrode |
JP2003347586A (en) | 2003-07-08 | 2003-12-05 | Toshiba Corp | Semiconductor light-emitting device |
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US5742098A (en) | 1995-03-15 | 1998-04-21 | Siemens Aktiengesellschaft | Semiconductor component with plastic sheath and method for producing the same |
JP2000196152A (en) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | Semiconductor light emitting device and manufacture thereof |
JP2002043620A (en) * | 2000-07-27 | 2002-02-08 | Shiro Sakai | Gallium nitride compound semiconductor element and method for forming electrode |
JP2003347586A (en) | 2003-07-08 | 2003-12-05 | Toshiba Corp | Semiconductor light-emitting device |
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WO2021015404A1 (en) * | 2019-07-25 | 2021-01-28 | 한국전기연구원 | Microwave band induction heating device |
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