466568 6855twf,doc/008 A7 B7 經濟部智慧財產局員Η消費合作社印製 五、發明說明（L ) 本發南是有關於一種半導體元件再回收的方法，且特 別是有關於一種有機薄膜測機控片再回收的方法3 在製造半導體兀件時’因爲製造過程中的製程條件無 法做到完全一樣’所以往往在經過一段時間之後，就必須 執行一次測試，以確保元件的品質。以薄膜的形成製程爲 例，通常最初形成的薄膜厚度與經過一段時間同樣製程所 形成之薄膜厚度會因爲製程上些微的條件差異而不同，因 此這些些微差異會造成元件尺寸與預定値不同，而影響成 品的特性與預定的結果不同，並造成產品品質不一的問 題。 爲了確保產品品質與控制薄膜厚度，必須每隔一段製 程時間，就進行薄膜厚度測試，而用來測試的晶片，稱爲 「測機控片」。在測試過程之後，會有測機控片再回收的 步驟，以節省製造成本並兼顧環境保護。 目前，在半導體元件上形成的薄膜種類很多，其中包 括有機低介電常數（Organic Low k)薄膜。而在砂基底形 成有機低介電常數薄膜時，通常都會先在矽基底上形成一 層表面黏著層（Glue Layer)以增進有機低介電常數薄膜 的黏著力（Adhesion)。 一般用於測試薄膜厚度的有機薄膜測機控片結構包括 在矽基底上有一層表面黏著層，表面黏著層上有一層有機 低介電常數薄膜，其中，表面黏著層是用來增加其上之有 機低介電常數薄膜之表面附著能力。然後’利用乾蝕刻方 式去除矽基底上的有機低介電常數薄膜與表面黏著層。最 3 (請先閱讀背面之注意事項再填寫本頁) — !| 訂·11!111*線 本紙張尺度適用+國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 4 6 6 5 6 8 6855twf.doc/008 五、發明說明（>) 後，利用噴洗方式淸潔矽基底以完成再回收的目的。然而， 觀察淸潔後的矽基底表面，仍殘留有部分表面黏著層難以 去除。 習知方法由於有機低介電常數薄膜與用以增加表面附 著能力的表面黏著層之化性相差很大，所以當製程進行到 有關測試薄膜厚度時，往往因爲測機控片再回收的過程 中，大多比照去除光阻的方式以乾蝕刻法去除基底表面的 薄膜。因此在淸潔過後，在矽基底表面仍會殘留部分表面 黏著層所造成之微粒，而無法g續使用，因此將增加製造 成本。 爲了先瞭解殘留於矽基底表面之微粒的性質，因此利 用測試其光學特性得知，此類黏著層具有如氧化物之特 性，故依據上述測試提出一種有機薄膜測機控片再回收的 方法，以去除矽基底表面殘留的部分表面黏著層所造成之 微粒，而繼續用來偵測機臺微粒行爲。 本發明提供一種有機薄膜測機控片再回收的方法。此 方法係於矽基底上有一表面黏著層，於表面黏著層上有一 有機低介電常數薄膜，表面黏著層是用來增加其上之有機 低介電常數薄膜之表面附著能力。然後，利用乾蝕刻方式 去除矽基底上的有機低介電常數薄膜與表面黏著層。再利 用濕式蝕刻方式去除上一步驟未淸除的部分表面黏著層所 形成的微粒，最後利用噴洗方式徹底淸潔矽基底的表面° 本發明利用濕式蝕刻方式去除矽基底表面殘留的部分 表面黏著層，利用酸蝕將殘留的部分表面黏著層掀除以改 4 (請先閲讀背面之注意事項再填寫本頁) . I I I I I I I 一SJ1111111« 經濟部智珐財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公* ) A7 B7 4 6 656 8 6855twf.doc/008 五、發明說明⑺） 善殘留微粒之現象。而且，當製程發展至12吋的世代 (Generation)時，因爲晶片單價高，因此本發明將具有 節省成本之優勢。 爲讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細 說明如下： 圖式之簡單說明： 第1A圖至第1D圖是依照本發明一較佳實施例一種 有機薄膜測機控片再回收之淸潔流程剖面圖；以及 第2圖是依照本發明一較佳實施例一種有機薄膜測機 控片再回收之步驟流程圖。 '標記之簡單說明： 100 :矽基底 102，102a，102b :表面黏著層 104 :有機低介電常數薄膜 106 :乾蝕刻 108 =濕蝕刻 110:噴洗 s200 :乾式蝕刻步驟 s202 :濕式蝕刻步驟 s204 :噴洗步驟 實施例 第1A圖至第1D圖是依照本發明一較佳實施例一種 有機薄膜測機控片再回收之淸潔流程剖面圖。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先間讀背面之注意事項再填寫本頁) --t 丨 I I 訂 i I ! 線 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 6 65 6 8： 6855twf.doc/008 五、發明說明（K) 請參照第1A圖，通常用於測試薄膜厚度的有機薄膜 測機控片結構與一般半導體元件上的結構一樣，包括在砂 基底100上有一層表面黏著層102，表面黏著層102上有 一層有機低介電常數薄膜104。其中，表面黏著層1〇2是 用來增加其上之有機低介電常數薄膜104之表面附著能 力。 然後，請參照第1Β圖，利用乾蝕刻法1〇6去除矽基 底100上的有機低介電常數薄膜104與表面黏著層1〇2。 乾蝕刻法106的反應氣體例如是四氟化碳（CF4)。因爲有 機低介電常數薄膜104與用以增加表面附著能力的表面黏 著層102之化性相差很大，所以經過乾蝕刻106步驟後， 在矽基底100表面仍然殘留有部分表面黏著層l〇2a。 接著，請參照第1C圖，去除矽基底100表面殘留的 部分表面黏著層l〇2a。因爲表面黏著層102具有如氧化物 (Oxide)的特性，所以可以利用例如濕式蝕刻108步驟 去除表面黏著層l〇2a。濕式蝕刻108例如是以氫氟酸 (Hydrofluoric Acid)爲蝕刻溶液，利用酸蝕將殘留的部 分表面黏著層l〇2a掀除以改善殘留微粒之現象。經過濕 式蝕刻108步驟後，會有一些由表面黏著層102a所形成 的微粒102b附著於矽基底100表面。 最後，請參照第1D圖，微粒102b是物理吸附於矽 基底100表面，所以利用噴洗方式110淸潔矽基底100表 面，以去除由表面黏著層l〇2a所形成的微粒l〇2b，達到 淸潔矽基底100表面，完成再回收的目的。噴洗方式110 6 本紙張又¥適用中國S家標準（CNS)A4規格（210 X 297公爱7 ----------^ -裝---- ----訂--I--II !線 <請先閱讀背面之注意事項再填寫本頁) A7 B7 466568 6855twf.doc/008 五、發明說明（匕） 例如是超音波淸洗（Ultrasonic Scrubbing)或者水柱沖洗 (Spray Cleaning) 〇 第2圖是依照本發明一較佳實施例一種有機薄膜測機 控片再回收之步驟流程圖。466568 6855twf, doc / 008 A7 B7 Printed by Consumer Property Cooperative, Member of the Intellectual Property Bureau, Ministry of Economic Affairs. 5. Description of Invention (L) The present invention relates to a method for recycling semiconductor components, and more particularly to an organic thin film measuring machine. Method 3 for recycling wafers When manufacturing semiconductor components, 'Because the process conditions in the manufacturing process cannot be exactly the same', often after a period of time, a test must be performed to ensure the quality of the components. Taking the film formation process as an example, the thickness of the initially formed film and the thickness of the film formed by the same process over a period of time will vary due to slight differences in the conditions of the process. Therefore, these slight differences will cause the component size to be different from the intended one, and Affecting the characteristics of the finished product is different from the intended result, and causes problems of uneven product quality. In order to ensure product quality and control film thickness, the film thickness test must be performed at a certain process time. The wafer used for testing is called "tester control chip". After the test process, there will be a step of recycling the tester control chip to save manufacturing costs and take into account environmental protection. At present, there are many types of thin films formed on semiconductor devices, including organic low-k films. When forming an organic low-dielectric-constant film on a sand substrate, a surface adhesive layer (Glue Layer) is usually first formed on the silicon substrate to improve the adhesion of the organic low-dielectric-constant film. The structure of an organic thin film tester generally used for testing film thickness includes a surface adhesive layer on a silicon substrate and an organic low dielectric constant film on the surface adhesive layer. The surface adhesive layer is used to increase the thickness of the film. Surface adhesion of organic low dielectric constant films. Then, the organic low dielectric constant film and the surface adhesion layer on the silicon substrate are removed by dry etching. The most 3 (Please read the precautions on the back before filling this page) —! | Order · 11! 111 * Threaded paper size applies + National National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 4 6 6 5 6 8 6855twf.doc / 008 5. After the description of the invention (>), the silicon substrate is cleaned by spray cleaning to complete the purpose of recycling. However, when observing the cleaned silicon substrate surface, some surface adhesive layers remain difficult to remove. Conventional methods Because the chemical properties of the organic low-dielectric-constant film and the surface adhesive layer used to increase the surface adhesion ability are very different, when the process is carried out to test the thickness of the film, it is often because of the process of recycling the tester control film. In most cases, the film on the surface of the substrate is removed by a dry etching method in comparison with the method of removing the photoresist. Therefore, after cleaning, the particles caused by the surface adhesion layer will still remain on the surface of the silicon substrate and cannot be used continuously, which will increase the manufacturing cost. In order to understand the nature of the particles remaining on the surface of the silicon substrate, the optical properties of this type of adhesive layer were tested by testing its optical characteristics. Therefore, based on the above tests, a method for recovering organic thin film tester control tablets was proposed. In order to remove the particles caused by the surface adhesion layer remaining on the surface of the silicon substrate, it continues to be used to detect the particle behavior of the machine. The invention provides a method for recycling the control film of an organic thin film measuring machine. This method involves a surface adhesion layer on a silicon substrate and an organic low dielectric constant film on the surface adhesion layer. The surface adhesion layer is used to increase the surface adhesion of the organic low dielectric constant film thereon. Then, the organic low-dielectric-constant film and the surface adhesion layer on the silicon substrate are removed by dry etching. Then, the wet etching method is used to remove the particles formed by the surface adhesion layer that was not removed in the previous step, and finally the surface of the silicon substrate is thoroughly cleaned by spray cleaning. The invention uses wet etching to remove the remaining part of the surface of the silicon substrate. Surface adhesive layer, use acid etching to remove the remaining part of the surface adhesive layer to change 4 (Please read the precautions on the back before filling in this page). IIIIIII-SJ1111111 «Printed by the Consumers’ Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 male *) A7 B7 4 6 656 8 6855twf.doc / 008 V. Description of the invention ⑺) The phenomenon of fine particles is good. Moreover, when the manufacturing process is developed to a 12-inch generation, the present invention will have the advantage of cost saving because the wafer unit price is high. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: Figure 1A to FIG. 1D is a cross-sectional view of a cleaning process for recovering an organic thin-film tester control sheet according to a preferred embodiment of the present invention; and FIG. 2 is a diagram illustrating an organic thin-film tester control sheet for re-collection according to a preferred embodiment of the present invention Flow chart of the steps. A brief description of the mark: 100: silicon substrate 102, 102a, 102b: surface adhesion layer 104: organic low dielectric constant film 106: dry etching 108 = wet etching 110: spray washing s200: dry etching step s202: wet etching step s204: FIG. 1A to FIG. 1D of the spray washing step embodiment are cross-sectional views of a cleaning process for recovering an organic thin film measuring machine control panel according to a preferred embodiment of the present invention. 5 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 x 297 mm) (please read the precautions on the back before filling this page) --t 丨 II Order i! Printed by Consumer Cooperatives Printed by Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 65 6 8: 6855twf.doc / 008 V. Description of the Invention (K) Please refer to Figure 1A, which is commonly used for testing organic film testing machine control The sheet structure is the same as the structure on a general semiconductor device, including a surface adhesion layer 102 on the sand substrate 100 and an organic low dielectric constant film 104 on the surface adhesion layer 102. Among them, the surface adhesive layer 102 is used to increase the surface adhesion ability of the organic low dielectric constant film 104 thereon. Then, referring to FIG. 1B, the organic low-dielectric-constant film 104 and the surface adhesive layer 102 on the silicon substrate 100 are removed by the dry etching method 106. The reaction gas of the dry etching method 106 is, for example, carbon tetrafluoride (CF4). Because the chemical properties of the organic low-dielectric-constant film 104 and the surface adhesive layer 102 used to increase the surface adhesion ability are very different, after the dry etching 106 step, a part of the surface adhesive layer 102a still remains on the surface of the silicon substrate 100. . Next, referring to FIG. 1C, a part of the surface adhesive layer 102a remaining on the surface of the silicon substrate 100 is removed. Since the surface adhesive layer 102 has characteristics such as oxide, the surface adhesive layer 102a can be removed by, for example, the wet etching 108 step. The wet etching 108 uses, for example, hydrofluoric acid as an etching solution, and removes the remaining part of the surface adhesive layer 102a by acid etching to improve the phenomenon of residual particles. After the wet etching 108 step, some particles 102b formed by the surface adhesive layer 102a are attached to the surface of the silicon substrate 100. Finally, referring to FIG. 1D, the particles 102b are physically adsorbed on the surface of the silicon substrate 100. Therefore, the surface of the silicon substrate 100 is cleaned by using a spray cleaning method 110 to remove the particles 102b formed by the surface adhesive layer 102a to achieve Clean the surface of the silicon substrate 100 for the purpose of recycling. Spray cleaning method 110 6 This paper is also applicable to China S Standard (CNS) A4 specifications (210 X 297 Public Love 7 ---------- ^ -Packing -------- Order-- I--II! Line < Please read the precautions on the back before filling out this page) A7 B7 466568 6855twf.doc / 008 5. Description of the invention (Dagger) For example, Ultrasonic Scrubbing or Water Column Washing (Spray Cleaning) 〇 FIG. 2 is a flowchart of the steps for recovering the control film of the organic thin film measuring machine according to a preferred embodiment of the present invention.
請參照第2圖，此有機薄膜測機控片再回收之步驟包 括：步驟s200，利用乾式蝕刻將測試後的有機薄膜測機控 片之基底上的有機低介電常數薄膜與表面黏著層去除，因 爲有機低介電常數薄膜與表面黏著層之化性相差很大’所 以經過乾式蝕刻步驟後，在基底表面仍然殘留有部分表面 黏著層。之後在步驟s202中，利用濕式蝕刻將殘留在基 底上的表面黏著層去除，濕式蝕刻例如是以氟化氫爲蝕刻 溶液，利用酸蝕將殘留的部分表面黏著層掀除以改善殘留 之現象。去除後的殘留表面黏著層仍會以物理吸附的方式 殘留於基底表面。因此，最後在步驟s2〇4中’利用噴洗 方式將吸附於基底上的表面黏著層完全去除。其中噴洗方 式例如是超音波淸洗或者水柱沖洗D 本發明之特徵包括下列各點I ' 1. 本發明在用以去除有機低介電薄膜的乾蝕刻步驟與 淸潔晶片表面的噴洗製程中間，再以濕式蝕刻法將殘留的 部分表面黏著層掀除以改善殘留微粒之現象’進而達到增 加晶片回收率的目的。 2. 當製程發展至12吋晶圓的世代（Generation)時’ 因爲晶片單價高’所以本發明不但大大改善晶片表面殘留 物的問題，更具有節省成本之優勢。 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------I 1 I L. ：-裝 ill^i — · —----缓 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Λ ^ 656 8 6855twf.doc/008 A7 B7 五 發明說明（^ ) 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內’當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 請 先 閱 讀 背 注項再填寫本頁) 裝--------訂-- - ------線 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中國國家標準（CNS>A4規格<210 297公釐〉Please refer to FIG. 2. The step of recovering the organic thin film tester control sheet includes: Step s200, using dry etching to remove the organic low dielectric constant film and the surface adhesive layer on the substrate of the organic thin film tester control sheet after the test. Because the chemical properties of the organic low-dielectric-constant film and the surface adhesion layer are very different, so after the dry etching step, a part of the surface adhesion layer still remains on the substrate surface. Thereafter, in step s202, the surface adhesive layer remaining on the substrate is removed by wet etching. For example, wet etching uses hydrogen fluoride as an etching solution, and the remaining surface adhesive layer is removed by acid etching to improve the residual phenomenon. After the removal, the remaining surface adhesive layer will remain on the substrate surface by physical adsorption. Therefore, in the last step s204, the surface adhesive layer adsorbed on the substrate is completely removed by a spray washing method. The spray cleaning method is, for example, ultrasonic cleaning or water column washing. D The features of the present invention include the following points I '1. The present invention includes a dry etching step for removing an organic low dielectric film and a spray cleaning process for cleaning the surface of a wafer. In the middle, the remaining part of the surface adhesive layer is removed by a wet etching method to improve the phenomenon of residual particles', thereby achieving the purpose of increasing the recovery rate of the wafer. 2. When the process is developed to the generation of 12-inch wafers ‘Because the unit price of the wafers is high’, the present invention not only greatly improves the problem of residues on the surface of the wafers, but also has the advantage of cost savings. 7 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) ------- I 1 I L. ： -install ill ^ i — · —---- ease (please read first Note on the back, please fill in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 656 8 6855twf.doc / 008 A7 B7 Five Invention Instructions (^) Although the present invention has been disclosed as above with a preferred embodiment, then It is not intended to limit the present invention. Any person skilled in the art can make some changes and retouches without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the scope of the attached patent application. Whichever comes first. Please read the back note first and then fill out this page.) -------- Order --- ---------- Consumer cooperation between employees of the Intellectual Property Bureau of the Ministry of Economics CNS > A4 specifications < 210 297 mm>