CN106298442B - Method for removing residue - Google Patents
Method for removing residue Download PDFInfo
- Publication number
- CN106298442B CN106298442B CN201510271913.1A CN201510271913A CN106298442B CN 106298442 B CN106298442 B CN 106298442B CN 201510271913 A CN201510271913 A CN 201510271913A CN 106298442 B CN106298442 B CN 106298442B
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- Prior art keywords
- residue
- residues
- reflective coating
- coating
- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
Abstract
The invention provides a method for removing residues, which comprises the following steps: providing a residue removing object, wherein the surface of the residue removing object is provided with residues; forming an anti-reflective coating on a surface of the residue removing object to adsorb the residue; and removing the anti-reflection coating. In the method for removing the residues, the anti-reflection coating with strong adhesion is coated on the surface of the object to be removed, so that the residues on the surface of the object to be removed are adhered on the anti-reflection coating, and then the anti-reflection coating is removed, thereby achieving the purpose of removing the residues, solving various problems caused by the residues and improving the characteristics and the yield of the device.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing, and more particularly, to a method for removing residue.
Background
In the integrated circuit manufacturing process, etching is performed through the whole process flow, and various device patterns on the surface of a wafer are formed through etching. Etching refers to a process of removing a portion of material from a thin film on the surface of a wafer to form a pattern. By etching, the pattern can be transferred from the mask plate to the wafer.
The Via etching (Via ETCH) is a process of etching a series of vias in an interlayer film (usually, various oxide films) between two layers of interconnection metal lines, wherein the vias are filled with interconnection metal used between the two layers of metal lines, and thousands of transistors are connected into a device loop with a certain function through the metal lines. During the via etching, a Polymer (Polymer) is generated, which generally contains elements such as carbon (C), fluorine (F), and silicon (Si).
The Polymer (Polymer) is an unnecessary and difficult to remove residue, and easily adheres to the surface of the wafer together with the environmental minute particles (particles), forming spherical defects (ball defects). The spherical defects may block the through-holes, so that the size of the through-holes becomes small, thereby affecting the resistance characteristics of the through-holes. And seriously, even open circuit between metal wirings, resulting in device failure. Therefore, after the via etching process, the wafer is generally cleaned to remove various residues on the surface thereof.
Currently, there are three main cleaning methods to remove the residues on the wafer surface: the first cleaning method is brush cleaning (Scrubber cleaning), i.e. the surface of the wafer is brushed by using a brush; the second cleaning method is that nitrogen (Scrubber + N2 Clean) is introduced while the brush is cleaned, and the cleaning effect of the brush is enhanced by the nitrogen purging; the third cleaning method is two chemical double processing (chemical double processing), and the wafer is sequentially put into a chemical solution (octanoic acid ST250) to be cleaned twice.
However, the first cleaning method and the second cleaning method are very poor in removing the residues on the wafer surface, and the spherical defects are not substantially reduced after cleaning. Although the third method can remove partial residues on the surface of the wafer, the octanoic acid ST250 is generally self-contained Polymer (Polymer), so the cleaning effect is not satisfactory, and the wafer is observed by an inspection apparatus to find spherical defects.
Disclosure of Invention
The invention aims to provide a method for removing residues, which aims to solve the problem that the residues of a through hole etching process cannot be effectively removed in the prior art, so that the defects of the through hole are caused.
In order to solve the above technical problem, the present invention provides a method for removing residues, including:
providing a residue removing object, wherein the surface of the residue removing object is provided with residues;
forming an anti-reflective coating on a surface of the residue removing object to adsorb the residue;
and removing the anti-reflection coating.
Optionally, in the method for removing the residue, the anti-reflective coating completely covers the surface of the object to be removed.
Optionally, in the method for removing the residue, the thickness of the anti-reflective coating is more than 1000 angstrom meters.
Optionally, in the method for removing the residue, the thickness of the anti-reflection coating is between 1500 and 2000 angstroms.
Optionally, in the method for removing the residue, the residue removal object is a wafer.
Optionally, in the method for removing the residue, the residue is a polymer generated by a via etching process.
Optionally, in the method for removing the residue, the residue is a residue of a photoresist removal process.
Optionally, in the method for removing the residue, the residue is a polymer carried by caprylic acid ST 250.
Optionally, in the method for removing the residue, the process for forming the anti-reflective coating is a coating process.
Optionally, in the method for removing the residue, a process for removing the anti-reflective coating is a stripping process.
In the method for removing the residues, the anti-reflection coating with strong adhesion is coated on the surface of the object to be removed, so that the residues on the surface of the object to be removed are adhered on the anti-reflection coating, and then the anti-reflection coating is removed, thereby achieving the purpose of removing the residues, solving various problems caused by the residues and improving the characteristics and the yield of the device.
Drawings
FIG. 1 is a flow chart of a method of cleaning residue according to an embodiment of the present invention;
FIG. 2 is a schematic view of a wafer surface before an anti-reflective coating is formed according to an embodiment of the present invention;
FIG. 3 is a schematic view illustrating a structure of a wafer with an anti-reflective coating formed thereon according to an embodiment of the present invention;
FIG. 4 is a schematic view of the wafer with the anti-reflective coating removed thereon according to the embodiment of the present invention;
FIG. 5 is a graph comparing the removal of spherical defects by the method for removing residues according to the embodiment of the present invention with the removal of spherical defects by the conventional cleaning method.
Detailed Description
The residue removal method according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Please refer to fig. 1, which is a flowchart illustrating a method for removing residue according to an embodiment of the present invention. As shown in fig. 1, the method for removing the residue includes:
the method comprises the following steps: providing a residue removing object, wherein the surface of the residue removing object is provided with residues;
step two: coating an anti-reflection coating on a surface of the residue removing object to adsorb the residue;
step three: and removing the anti-reflection coating.
Specifically, first, as shown in fig. 2, a residue removing object 10 is provided, and the residue removing object 10 has a residue 11 on a surface thereof. The residue removing object 10 may be a wafer, or may be another semiconductor substrate or a glass substrate. The residue 11 may be a Polymer (Polymer) generated by a via etching process, or a Polymer (Polymer) carried by the caprylic acid ST250 itself, a residue of a photoresist removing process, various particles (particles), and the like.
Next, as shown in fig. 3, an Anti-Reflective coating (BARC) 20 is formed on the surface of the residue removing object 10 through a coating process, and the Anti-Reflective coating 20 has a strong adhesion effect on the residue 11 on the surface of the residue removing object 10, including the polymer generated by the via etching process. After the coating is completed, the surface of the residue removing object 10 is completely covered by the anti-reflection coating 20, and the residues 11 on the surface of the residue removing object 10 are all stuck on the reflection coating 20.
Preferably, the thickness of the anti-reflective coating 20 is above 1000 angstroms, and further, the thickness of the anti-reflective coating 20 ranges between 1500 angstroms and 2000 angstroms, such as 1600 angstroms, 1700 angstroms, 1800 angstroms or 1900 angstroms of the anti-reflective coating 20.
After the anti-reflective coating 20 is formed, the anti-reflective coating 20 is cured by ultraviolet light or heat.
Finally, the anti-reflective coating 20 is removed by a lift-off process. As shown in fig. 4, since the residue 11 is firmly adsorbed by the anti-reflective coating 20, the residue 11 is completely removed when the anti-reflective coating 20 is removed.
Experiments prove that the method for removing the residues provided by the embodiment is simple and effective, has a good removing effect on various residues, including polymers generated by a through hole etching process, polymers carried by the caprylic acid ST250, residues of a photoresist removing process and various micro particles, and well solves various problems caused by the residues. For example, spherical defects are caused by polymers (polymers) generated during via etching.
Please refer to fig. 5, which is a comparison graph of the effect of the method for removing spherical defects according to the embodiment of the present invention and the effect of the conventional cleaning method. As shown in fig. 5, after the polymer on the wafer surface is adhered away by the anti-reflective coating after the via etching, the spherical defects are substantially completely removed (shown in part a), and after the via etching, the wafer is washed in the solution, and many spherical defects are found (shown in part B). It can be seen that the method for removing residues provided by the present embodiment is more effective than the existing method for removing polymers, and can completely remove spherical defects.
In summary, in the method for removing the residue provided by the embodiment of the invention, the anti-reflective coating with strong adhesion is coated on the surface of the residue removal object, so that the residue on the surface is adhered on the anti-reflective coating, and then the anti-reflective coating is removed, thereby achieving the purpose of removing the residue, solving various problems caused by the residue, and improving the characteristics and yield of the device.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (9)
1. A method of removing residue, comprising:
providing a residue removing object, wherein the surface of the residue removing object is provided with residues;
forming an anti-reflective coating on a surface of the residue removing object to adhere the residue;
after forming the anti-reflective coating, curing the anti-reflective coating;
the anti-reflective coating is removed by a stripping process to remove residues adhered to the anti-reflective coating.
2. The method for removing residues according to claim 1, wherein the antireflection coating completely covers the surface of the object for removing residues.
3. The method for removing residues of claim 1, wherein said anti-reflective coating has a thickness of 1000 angstroms or more.
4. A method for removing residues according to claim 3, wherein said anti-reflective coating has a thickness of between 1500 and 2000 angstroms.
5. A method for removing residues according to claim 1, wherein said residue removing object is a wafer.
6. The method of claim 1, wherein the residue is a polymer generated by a via etching process.
7. The method of claim 1, wherein the residue is a residue of a photoresist removal process.
8. The method for removing residues according to claim 1, wherein the residues are polymers of ST250 itself, and ST250 is a photoresist remover.
9. The method for removing residues according to claim 1, wherein the process for forming the anti-reflective coating is a coating process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510271913.1A CN106298442B (en) | 2015-05-25 | 2015-05-25 | Method for removing residue |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510271913.1A CN106298442B (en) | 2015-05-25 | 2015-05-25 | Method for removing residue |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106298442A CN106298442A (en) | 2017-01-04 |
| CN106298442B true CN106298442B (en) | 2020-11-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510271913.1A Active CN106298442B (en) | 2015-05-25 | 2015-05-25 | Method for removing residue |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090246958A1 (en) * | 2008-03-26 | 2009-10-01 | International Business Machines Corporation | Method for removing residues from a patterned substrate |
| CN103390540A (en) * | 2012-05-10 | 2013-11-13 | 台湾积体电路制造股份有限公司 | Method of removing residue during semiconductor device fabrication |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201128328A (en) * | 2009-09-02 | 2011-08-16 | Wako Pure Chem Ind Ltd | Composition for surface treatment of a semiconductor and method for surface treatment of a semiconductor using such composition |
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2015
- 2015-05-25 CN CN201510271913.1A patent/CN106298442B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090246958A1 (en) * | 2008-03-26 | 2009-10-01 | International Business Machines Corporation | Method for removing residues from a patterned substrate |
| CN103390540A (en) * | 2012-05-10 | 2013-11-13 | 台湾积体电路制造股份有限公司 | Method of removing residue during semiconductor device fabrication |
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| CN106298442A (en) | 2017-01-04 |
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