TW465266B - Wiring board for bump bonding, semiconductor device assembled from the wiring board and manufacturing method of wiring board for bump bonding - Google Patents

Abstract

A wiring board for bump bonding which allows to prevent the occurrence of broken connections between bumps and wiring, and has small deviations in bump heights, and is superior in productivity; a semiconductor device assembled from the wiring board; and a manufacturing method of the wiring board for bump bonding are to be provided. In manufacturing a wiring board for bump bonding using an insulating layer having a conductive layer provided on its one surface, first, on the one surface of the conductive layer, a first resist layer is provided, exposed and developed, and the first resist layer in an area other than bump formation sections is eliminated, the conductive layer is half-etched to form bumps, then after eliminating the first resist layer as necessary, a second resist layer is provided, exposed and developed, and by etching the exposed conductive layer, a wiring pattern is formed. Thereafter, after the resist on the wiring pattern is eliminated as necessary, a protective resist layer is provided on the entire surface of the wiring pattern side, exposed and developed, and the surfaces of the bumps are exposed, then the protective resist layer is cured. Via holes are then formed by etching from the surface of the insulating layer side in desired sections, and the exposed bottom surfaces of the via holes and the surfaces of the bumps are metal-plated.

Description

4 6 526 S V. Description of the invention (1) Background of the invention The present invention relates to a wiring board for block bonding used in semiconductor packages for various electronic devices, a semiconductor device composed of wiring boards, and a A method for manufacturing a wiring board for block bonding. s Relevant technology is inserted to meet the requirements for miniaturization and weight reduction of electronic devices in recent years. It is good for miniaturization. In this type of block junction type semiconductor package, the wiring material of the body wafer and the mounting wafer (wiring material 'semiconductor: connection' & via electrode pads and forming on the semiconductor wafer) The block shape of the wiring material of Yu Yuean's electric chip is obtained. Traditionally, this type of wiring material with a block shape is composed of a polyimide film with a conductive layer such as a copper box. The guide of the material is coated: a layer of photoresist, and then masked with a photomask of the desired pattern: Figure macro. The conductive layer is engraved to obtain the desired cloth film: Zhao She :: to excite the carbon dioxide and the like The laser is fired from the side of the polyimide M to form a channel of a desired diameter. U The side of the wiring pattern is coated with an insulating tree case, and then the conductive layer surface steel exposed on the bottom section of the channel is formed into her shape ^ Sham The growth plated on the clothing is used as the external π point to connect Γ, and the insulating resin film is irradiated with a laser to form a hole Μ as the external point. Finally, in order to facilitate the connection with the semi-concrete, it is necessary to be a neighbor. $ Λ D The steel watch exposed by the bottom section of the tunnel with 4 points of knowledge

EH 88111252.ptd

Page 6 465266 V. Description of the invention (2)

The surface and the block-shaped surface are plated with gold D to join the wiring material and the semiconductor wafer obtained through the above process, and a thermo-compression method or a method of combining thermo-compression and ultrasonic waves is used. Filler pads for mounting on printed wiring boards. However, according to the above-mentioned traditional manufacturing method, discontinuous cross sections of grain boundaries occur between the steel foil (which is the raw material of copper wiring) and the block-shaped interface formed by electroplating, so a problem arises, in The stress generated when the semiconductor wafer is bonded may cause the connection between the block shape and the wiring to be broken. In addition, 'because of the formation of a block shape', electroplated metal is grown on the bottom section of the channel, and the thickness of the cymbal must be at least equal to or greater than that of polyimide, which is an insulating resin layer. Therefore, the process of electroplated metal requires a long time. This makes it impossible to increase productivity. In addition, since the block shape is grown by electroplated metal, the south deviation of the block shape cannot be reduced. _Summary of the Invention The present invention has been made in consideration of the above circumstances, and an object thereof is to provide a wiring board for block bonding, which can prevent the connection between the block and the wiring from being broken, and the deviation of the block two degrees is small and has excellent Productivity, and a semiconductor device combined from a wiring board, and a method for manufacturing a wiring board for block bonding. In order to solve the above-mentioned problem, related to the first aspect of the present invention is a wiring board for block bonding, which includes an insulating layer, a wiring layer placed on a surface of the insulating layer, and has a position at a desired position. Integrated block shape for wiring

8S111252, ptd Page 7 4 6526 6 V. Description of the invention (3) There is a protective corrosion-resistant layer on one surface of the insulating layer, and a block-shaped surface is exposed, and the channels therein are arranged on the other surface of the insulating layer. In addition, a second aspect of the present invention relates to a semiconductor device, which is characterized in that it is a combination of a block bonding wiring board having the above-mentioned structure. In addition, related to the third aspect of the present invention is a method for manufacturing a block bonding wiring board, including: (a) applying a first resist layer on a surface of a conductive layer disposed on one surface of an insulating layer; Manufacturing process; (b) performing an exposure and development process to remove the first resist layer in areas other than the area to be formed into a block shape; (c) performing half-etching on the exposed conductive layer to form a block shape (D) a process of applying a second resist layer on the conductive layer; (e) performing a process of exposing, developing, and etching the exposed conductive layer to form a wiring pattern; (f) the entirety of the wiring pattern side A process of applying a protective silver barrier layer on the surface; (g) performing a process of exposing and developing to expose a block-shaped surface and hardening the protective resist layer; (h) applying a third barrier layer on the other surface of the insulating layer (I) a process of exposing and developing on the third rhombohedral layer to form a worm-etched pattern; and (j) a process of etching the exposed insulating layer to form a channel; and wherein; exposing on the button After the insulating layer is formed, Department 〇

88111252.ptd Page 8 V. Description of the Invention (4) ----- The surface of the conductive layer and the block-shaped surface exposed by the fine surface are electroplated metal, the conductive layer is steel, and the insulating layer is a polyimide film. Fig. 1 的 A cross-section of a specific example of a block-type bonding wiring board of the present invention 1 Insulating layer 2 Block-shaped 1 3 4 5 Thin-layer wiring layer protection corrosion-resistance channel thin layer . Fig. 1 shows the figure of the soil. The first concrete example of the block-joint wiring board for the invention of the invention is a steel wire, which is arranged on a surface of an insulating layer 1 (such as a polyimide film). Block shape 2, + wiring layer 3, at the desired position, is integrated with wiring layer 3 to form a protective layer, and # insulation layer 1 is arranged on the surface of the wiring layer 3 side, and block shape 2 is exposed. Surface, and the holes 5 are placed in the π no of the insulating 扪, and the thin f-layers of gold or silver 2-1, 5-1 in the block shape 2. The bottom surface of the substrate is most easy to use. The present invention is very easy to use, and the semiconductor device is assembled with a wiring board using a wiring board. The semiconductor wafer is joined in the same way as the traditional method. 465266 5. Description of the invention ( 5) The block shape fills the vias with solder balls and is then bonded to the printed wiring board. Next, the process of manufacturing the wiring board for block bonding according to the present invention will be explained. First 'use a copper-polyimide substrate made of an insulating layer (such as a polyimide film) and a conductive layer', preferably using a copper foil laminated on one surface 'on the copper foil side of the substrate A dry film layer is laminated on the surface. Next, "mask the dry film resist layer with a photomask, and expose and develop it with ultraviolet light irradiation". Next, the area of the dry film resist layer other than the area to be formed into a block is removed. °° A half-etched copper foil conductive layer exposed in this way to form a block shape. After that, another layer of the above-mentioned resist film is laminated on the conductive layer side, but the dry film resist layer on the block must be removed beforehand. '' The laminated resist layer is shielded with a photomask having a desired wiring pattern, exposed to ultraviolet radiation, and then the exposed leads after development are etched to form a pattern of great lines. In addition, for example, the entire surface acoustic-layer dry film photoresist is formed on the wiring pattern side by a vacuum lamination method to constitute a protective resist layer, but the previous resist layer on the wiring pattern is removed in advance. 'Next, the protective resist is exposed and developed to remove the block-type photoresist, and then the protective resist is hardened. As for the money barrier layer that protects the residual barrier layer, a liquid coating method, or a prior layer, a resin film to form a dry film layer, etc. can be used, but 'from easy forming-thickness uniform sentence From the perspective of film, it is best to use dry film photoresist. take

4 6 526 6 V. Description of the invention (6) Afterwards, a dry film corrosion-resistant layer is laminated on the surface of the polyimide insulation layer of the copper-polydonimine substrate. At this time ', it is preferable to apply the same dry film resist on the entire surface of the wiring pattern side in order to protect the block shape in the subsequent etching process. Next, the dry film resist layer is masked, exposed and developed to form an etching pattern on the insulating layer. The exposed polyimide insulation layer is engraved to form holes. Through these processes', the block-type bonding wiring board of the present invention can be manufactured. In addition, in the present invention, it is desirable to be able to plate a layer of metal on the surface of the conductive layer and the block-shaped surface in the channel formed by the above method. At this point, a silver plating or a gold plating can be selected as required. Wait. As mentioned above, since the block shape and the wiring are integrally formed with the same conductive layer, a discontinuous cross-section of the grain boundary does not occur between the block shape and the wiring. In addition, because the formation of the block shape is performed by half-etching, it is not necessary The time required for the metal process of the electric clock in the traditional method, therefore, excellent productivity can be obtained. Description of Specific Examples Specific examples and comparative examples of the present invention will be explained below. Specific examples: First, a copper-polyimide-based copper foil composed of a polyimide film having a thickness of 50 micrometers, a width of 35 millimeters, and a length of 20 cm and a copper foil disposed on one surface of the film having a thickness of 25 micrometers On the side, a layer of 5 μm alkaline developing type negative dry film photoresist is laminated with a photomask to shield the silver resist layer, and then exposed to violet and external light with an intensity of 2000 millijoules. Copper-polyimide-based steel

4 6 526 6 V. Description of the invention (7) On the pig, a pattern with a distance of 9 mm in the longitudinal direction is formed, each of which is formed with 200 blocks' with a pitch of 120 microns in the width direction. Next, the exposed area of the steel foil is at 40 ° C. 〇Commercial copper chloride etching solution was contacted, and the steel foil area was half-etched to form a block shape. After that, the sodium hydroxide solution was used to remove the residual layer on the block shape. In addition, a dry film corrosion layer of the same type is further laminated on the copper foil side, masked with a mask having a desired wiring pattern, and the wiring pattern is obtained through the same exposure and development process. Next, the copper foil was etched by the same method as described above to form a wiring pattern, and the resist was removed. After that, an alkaline developing type dry film photoresist having a thickness of 35 µm was laminated on the entire surface of the wiring pattern side by a vacuum lamination method. Then expose and develop the laminated dry corrosion resist layer and remove the dry dielectric resist layer on the block surface. Then heat the substrate at 170 ° C to harden the remaining dry film resist layer. . Then, a layer of an alkali-resistant dry film with a thickness of 25 micrometers was laminated on each of the wiring pattern side and the polyimide film side, and the surface of the polyimide side of the substrate was masked with a designated photomask. , Expose and develop to form an opening of 22 μm in diameter and etch the exposed polyimide film to form a channel. After that, the remaining resist layers on both sides are removed. Finally, a commercially available cyanide-type gold plating solution was used to plate gold with a thickness of about 2 microns on the bottom surface of the channel and the massive surface. After obtaining the block shape of the block-type bonding wiring board by the above-mentioned process, observation with an optical microscope at a magnification of 4,000 times' found that the obtained block-shaped wearing surface was trapezoidal,

88111252.ptd Page 12

^ S526S V. Description of the invention (8) -------- In addition, when the block bonding wiring board is used at a temperature of 300 ° C and a load of 10 / shape for 30 seconds, the printed wiring board 布线After joining, a destructive test was performed to study the breakage of the connection between the block and the wiring, and as a result, no connection breakage was observed. Comparative Example: Polyimide film made of polyimide film with thickness of 30 micron, width of 35 millimeters, and length of 20 cm and copper disposed on one surface of 18 micrometers thick. On the foil side, a layer of a negative dry film photoresist of alkaline development type is laminated, the photoresist layer is shielded with light and exposed to ultraviolet light with an intensity of 200 millijoules, and developed to form a wiring pattern. . Next, the exposed area of copper ϋ is engraved with # 液 # composed of chlorinated steel at a temperature of 451, and then the rice blocking layer is removed. Next, irradiate the polyimide side of the steel_polyimide substrate with an argon laser to form a 50 micron diameter channel and expose the copper foil at the bottom cross section of the channel. 8 Apply an acrylic resin to the wiring pattern side. After being dried as a protective film for metal plating, the surface of the copper foil at the bottom section of the tunnel was washed with a sulfuric acid-based etchant, and then plated with a copper sulfate electroplating solution for 0.5 hours to form a block shape. After that, the protective film of the propylene-based resin was dissolved and removed using a ketone-based solution. 〇 In addition, the entire surface of the wiring pattern side was printed with an alkali-developed solder resist layer 'and masked with a specific mask, exposed and developed to form an opening with a cross section of 200 microns, and then the substrate was heated to i 7 {rc for Hardening of solder mask. Finally, the cross-section of the opening of the barrier layer on the side of the wiring pattern and the block form

_

465266 V. Description of the invention (9) :: After using the commercial cyanide-type gold plating solution to plate a thickness of about 2 micrometers by the rm method to obtain the block shape of the block bonding wiring board, a load of 300 Γ :: Γg lasts for 3 0 Destructive inspection was conducted with the heat of π of the printed wiring board to study the rupture of the connection between the block and the wiring. As a result, 9 of the 832 blocks were damaged. Effects of the invention:,

The explanation of σ Gangwen, because the present invention is to etch copper wiring after half-etching the copper foil to form the block shape of the wiring board, and then etch the wiring, so the block shape can be formed very efficiently, and between the block shape and the wiring No discontinuous cross-section of the grain boundary will occur. In addition, since the block shape is a half-etched copper foil with the same thickness, a wiring board with a small block height deviation can be obtained.

88111252.ptd Page 14

Claims (1)

46526 6 VI. Scope of patent application 1 'A type of wiring board for block bonding, including a set of 鏠 JS on the insulation layer-surface wiring layer, has: ==, 1 block type, and is arranged in Continuing insulation sounds include: To cut off:-The body-forming layer can be obtained by extending the block-shaped exposed table towel to the other surface of the insulating layer.丨 's Table ® "The channel is equipped with the wiring board for block bonding of item 1 of the second patent scope. The surface of the Φ 忒 and the bottom surface of the channel are plated with metal. Please use the wiring board for block bonding as specified in item 1 or 2 of the patent. 4. The manufacture of a wiring board for block bonding. (:) \ Electric package on one surface of an insulating layer (2) a process of applying a resist layer; (b) performing a process of exposing and developing to remove the area other than the block area of the first resist forming block; ί = ί S: the conductive layer is subjected to half-etching to form Block-shaped process; (d) A process of applying a second corrosion-resistant layer on the conductive layer. (”): Row / Λ, / shadow and the exposed conductive process in the rest of the time to form a wiring pattern A) j cloth = the entire surface of the case side is applied to protect and harden the rice block layer; 卩 get the block shape exposed on the surface, α) apply (i) to the third corrosion layer on the other surface of the insulating layer博 仵 温 L ^ Increased surface red '-etching pattern; and Ding Xianxian and development process to form 4 65 26 6 VI. Patent application scope (j) Process of etching the exposed insulating layer to form a channel. 5. For example, the manufacturing method of the block bonding wiring board according to item 4 of the patent application scope, wherein the exposed insulating layer is etched After the channel is formed, the conductive layer surface and the block-shaped surface exposed on the bottom surface of the channel are electroplated with metal. 6. For example, a method for manufacturing a block-joint wiring board according to item 4 or 5 of the patent application scope, wherein the conductive layer is copper And the insulating layer is a polyimide film. S81I] 252‘ptd page 16