B7 五、發明說明（1 ) [發明所屬技術領域] 本發明係關於一種特別適用於使用在D V D (數位視訊 光碟）、DVD-ROM等之拾訊器用光源，小型且價格低廉之 丰導體雷射裝置；更詳細地說，係關於一種即使DVD用 之雷射晶片變大，亦能以較小之外形形成之之底座型（stem type )半導體雷射裝置。 習知之技術 習知用於CD用拾訊器（plckLip )之底座型半導體雷 射裝置，係如第7圖所示之構造。亦即，使用藉由冷鍛法 使鐵等金屬材料成形，提高基座2]中心部之一部分以形成 ^熱部22 ’並藉由玻璃26等固定導線23'25之底座（stem) -、.二由夕基板等構成之剐安裝座3 4將雷射晶片3 1.安裝 該政熱邠22 ’雷射晶片之-側電極（晶片3 1之背面電 極）係通過副安奘&。1 i -. J 4之中繼部3 8而以電線3 3與導線 3電氣連接；雷射晶g $ — 朗片之另一側電極則藉由電線33連接 至副安裝座34，再诵過5,丨心 一 女裝座晨面而經由散熱部？2及 基座2〗與共同導線" 钍_ * 一 職·連接：又’ 3 2為監控用受光元 ’側電極係藉由電線33與導線 妓側電極則經由副安裝座34 '散熱㈣、及基二：與 :;導線24電氣連接。然後 '在其周圍籍由蓋上… 二成底座型韦導體辑置.蓋….頂部中二為 供雷射 著劑37封設有破螭板 此構造士，導線 發出的光透過而設有貫通孔 並以 (請先Μ讀背面之注意事項再填寫本頁) -----裝--------訂---------線-------- 間不 形成散執部 '11884 SO 3 43 1 A7 B? 五、發明說明（2 ) 而且導線2 3、2 5亦必彡貞藉& & & 藉由破璃部等封合固定，所以 底座20的直徑無法變 5.6_直徑之大小。 &以鎖能製料形為直徑 "另1 卜二第8圖所示’札壓加工（d—g)板狀體， 一體形成作為環部及散埶 ，，，、片之D座部28，此環部27内 藉由玻璃29直接封合固定導 ? ^ U疋等線23、25，形成底座20。蓋 子35藉由壓入底座2〇而 X苟覆蓋型癌。藉此構造，不須 於底座之基座形成直接散埶 B ^ 欺熟部，且不須預留熔接蓋子之空 間，故可製造直徑3.3mm者。&6 此外標註與第7圖相同部 分之符號’並省略其說明。 習知用於CD用拾訊n夕土·s ^ 带π器之先源，其雷射晶片之大小為 〇.25mm平方左右，且因動作 莉哥机亦小’所以就算使用上述 第8圖所顯示構造之半導體雷射裝置，亦因發熱量少而不 會發生問題’但是DVD用之雷射晶片變大為 〇-25mmx〇‘5mm程度，動作電流亦變大為cd用之2倍程 度’故有無法充分散熱時雷射晶片及無法發光之問題。因 此，有儘可能加大散熱部，以促進散熱之必要。而且，第 8圖顯示之構造中，因係以壓入的方式嵌上蓋子所以必 須在底座表面形成厚的焊錫鍍層#，導線上的焊錫鍍層亦 需加厚，而有難以進行接線之問題。 田另外’㈣CD或DVD等之信號檢測之拾訊器隨著 取近以筆記型電腦等為代表之電子機器之輕薄短小化，而 有極薄型化之要求，而橫向用於拾訊器之半導體雷射裝 置，其外徑亦有極小化之要求，因此即使如 之晶片尺 II ^--------訂--------線 (請先閲請背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS)A4規格（210 297公釐） 2 311884 Π7 五、發明說明（3 ) 寸變大而必須加強散熱之DV£)用半導體+ 守嫘雷射裝置’亦希 望其外徑在直徑3 ·3 m m以下。 發明之概述 本發明係鐾於上述之狀況而作成者，其目的在提供一 種即使使用晶月尺寸較大·發熱量較大之雷射晶片，亦。B7 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a small and low-cost abundance conductor laser, which is particularly suitable for light sources for pickups used in DVDs (digital video discs), DVD-ROMs, etc. Device; more specifically, it relates to a semiconductor laser device of a stem type which can be formed in a small shape even if a laser wafer for DVD becomes larger. Conventional technology A conventional semiconductor laser device of a base type used for a CD pickup (plckLip) has a structure as shown in FIG. That is, using a cold forging method to form a metal material such as iron to raise a part of the base 2] the central portion to form a hot portion 22 ′ and to fix a stem 23 ′ 25 by a glass 26 or the like-, 2. The mounting base 3 consisting of a substrate and the like will mount the laser wafer 3 1. The side electrode (the back electrode of the wafer 31) of the 22 'laser chip is mounted through the sub-amplifier & 1 i-. J 4's relay section 3 8 and electric wire 3 3 and wire 3 are electrically connected; the laser crystal g $ — the other side of the electrode is connected to the sub-mount 34 through the electric wire 33, and then recite After 5, 丨 a woman's seat in the morning and passing through the heat sink? 2 and the base 2 and the common wire " 钍 _ * position and connection: again '3 2 is the light receiving element for monitoring' side electrode system is connected to the wire 33 with the wire and the side electrode is dissipated through the sub-mount 34 ' , And base two: and :; Electrical connection of wire 24. Then 'the surrounding area is covered by a cover ... a base-type Wei conductor is arranged. The cover .... The top two are provided with a break plate for the laser encapsulant 37, and the light emitted by the wire is transmitted through. Through holes and (Please read the precautions on the back before filling in this page) ----- install -------- order --------- line --------- -There will be no discrete part '11884 SO 3 43 1 A7 B? 5. Description of the invention (2) and the wires 2 3, 2 5 must be fixed by sealing & & & Therefore, the diameter of the base 20 cannot be changed by the size of 5.6_diameter. & The shape of the lock-energy material is the diameter " Another 1 b 2 Figure 8 'Z-press processing (d-g) plate-shaped body, integrally formed as a ring portion and scattered, D, Block D, In the ring portion 27, the guides ^ U27 and other lines 23, 25 are directly sealed and fixed in the ring portion 27 to form the base 20. The cover 35 is covered with cancer by pressing the base 20 into the cover. With this structure, it is not necessary to form a direct disperse B ^ cooked portion on the base of the base, and there is no need to reserve a space for a welding lid, so a diameter of 3.3 mm can be manufactured. & 6 In addition, the same reference numerals as those in Fig. 7 are designated and their descriptions are omitted. Known as the source of CD pick-up n 夕 soil · s ^ with a π device, the size of the laser chip is about 0.25mm square, and because the operation of the Li Ge machine is also small, so even if the above Figure 8 is used The semiconductor laser device of the structure shown does not cause problems due to the small amount of heat generated. However, the laser chip used for DVDs has increased to about 0-25mm x 0'5mm, and the operating current has also increased to about twice that of cd. 'Therefore, there is a problem that the laser chip cannot emit light when the heat cannot be sufficiently dissipated. Therefore, it is necessary to enlarge the heat sink as much as possible to promote heat dissipation. In addition, in the structure shown in FIG. 8, since the cover is fitted by press-fitting, a thick solder plating layer # must be formed on the surface of the base, and the solder plating layer on the wire also needs to be thickened, which makes it difficult to perform wiring. As for the signal detection devices such as CDs and DVDs, as the lighter and thinner electronic devices such as notebook computers are used, the thinner and thinner devices are required, and semiconductors for pickups are used laterally. The laser device also requires a minimum outer diameter, so even if the wafer ruler II ^ -------- order -------- line (please read the precautions on the back first (Fill in this page) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 297 mm) 2 311884 Π7 V. Description of the invention (3) DV that becomes larger and must be cooled better.) Semiconductor + Shou Lei The shooting device also wants its outer diameter to be less than 3.3 mm in diameter. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide a laser wafer having a large crystal moon size and a large heat generation amount.
加大散熱部以提升散熱性同時維持小外徑之半導體雷射Z 置。 W 本發明之另-目的在提供一種可使筆記型電腦等所用 的光拾说器薄型化，以達成電子機器薄型化之光拾气养裝 置。 " 根據本發明之半導體雷射裝置，係由：至少2條導線 突由並固定於兩側之底座：設於該底座之—側底部（導線 之固定部）側之支持部，於該支持部上部，向上述突出之 條導線側延伸而形成寬幅之散熱部；及固著於此散熱部之 雷射晶片所構成。 在此’所謂向導線延伸而形成之寬幅，包括：設於2 條導線之間之支持部延伸於導線之寬度方向之情況；以及 设於導線後側之支持部向前方之導線側延伸之（.導線之寅 度方向與蚕直方向）情形的一側或者兩側之意此外，^ 成寬幅之部分 '係亦可覆蓋導線之前端而形成寬幅，雖然 導線之前瑞無覆蓋，但是亦可為覆蓋固著導線之破璃部分 之程度寬幅' 依據此構造由4.面觀之：由底座丄面觀之 卽使去 時導縳間隔等令接窄艰制因嵌Μ邹與導绵吮坧Γϊ, rr； ·： (請先閱讀背面之注意事項再填寫本頁) 裝---- 經濟部智慧財產局_'工消費合"'祛"« 訂---------線--------- 1Η84 經濟部智慧財產局員工消费合作社印製 A7 五、發明說明（4 ) 著導線之玻璃部）變為重疊之構造，故即使為狹窄的導線 之間隔亦可充分確保散熱部之體積。結果，形成直徑3 3mm 之外徑之狹窄導線間隔’可設計能充分散熱之散熱部， DVD用之晶片尺寸加大，則發熱大的雷射晶片亦可形成小 型之封裝體。亦即’習知此種半導體雷射裝置中，其散熱 部與支持部係以同樣寬度形成’平面觀之，為了散熱部與 支持部並列而配置之想法，使底座之導線間隔受限制，亦 受到不可加大散熱部之限制。但是，藉由加大平面上所視 與導線重疊之散熱部之想法，即使加大晶片尺寸且發熱大 之DVD用之半導體雷射裝置，亦可形成外形小型之直徑 3.3 mm程度之半導體雷射裝置。 上述底座係藉著上述2條導線以絕緣體固定於金屬製 基座之貫通孔而形成，上述支持部則與該基座一體形成，Enlarge the heat sink to improve heat dissipation while maintaining a small laser diode Z position. Another object of the present invention is to provide an optical pickup device capable of reducing the thickness of an optical pickup used in a notebook computer or the like, so as to reduce the thickness of an electronic device. " The semiconductor laser device according to the present invention is composed of: at least 2 wires protruding from and fixed to both sides of the base: a supporting portion provided on the side of the base-the bottom of the wire (the fixing portion of the wire), The upper part of the part extends to the protruding wire side to form a wide heat radiation part; and a laser chip fixed to the heat radiation part. Here, the so-called "width of the guide wire extension" includes: the case where the support portion provided between the two wires extends in the width direction of the wire; and the support portion provided on the rear side of the wire extends to the front side of the wire. (The direction of the lead and the straight direction of the wire) The meaning of one or both sides of the situation In addition, ^ the wide portion 'can also cover the front end of the wire to form a wide width, although the wire is not covered before, but It can also be wide enough to cover the broken glass part of the fixed wire. According to this structure, it can be narrowed and narrowed due to the following aspects: from the base to the surface, the guide interval and so on. Guides suck 坧 Γϊ, rr; ·: (Please read the precautions on the back before filling out this page) Packing ---- Intellectual Property Bureau of the Ministry of Economic Affairs _'industrial and consumer cooperation " 'elimination " «Order ---- ----- line --------- 1Η84 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (4) The glass part with wires) has an overlapping structure, so it is narrow The space between the wires can also fully ensure the volume of the heat sink. As a result, the formation of a narrow wire gap with an outer diameter of 33 mm in diameter can design a heat radiation portion capable of sufficiently dissipating heat, and the size of a wafer for a DVD is increased, so that a laser chip with high heat generation can also form a small package. That is, in the conventional semiconductor laser device, the heat dissipation part and the support part are formed with the same width in a planar view. The idea of arranging the heat dissipation part and the support part in parallel makes the lead wire interval of the base limited. Limited by the fact that the heat sink cannot be enlarged. However, by increasing the size of the heat-dissipating part overlapped with the wires viewed on the plane, even if the semiconductor laser device for a DVD with a large chip size and a large heat generation can be formed into a semiconductor laser with a small diameter of about 3.3 mm Device. The base is formed by fixing the two wires to the through hole of the metal base with an insulator, and the support portion is integrally formed with the base.
藉由形成上述散熱部連接於該支持部之構造’可使用熱傳 導佳之銅材等作為散熱部D 上述底座，係藉著上述2條導線以絕緣體固定於金屬 製基座之貫通孔而形成，藉由上述支持部及散熱部與該基 座以體形成，而使尺寸精密度變佳、組裝亦變為容易。 上述支持部及散熱部為金屬構件，例如以金屬塊或板 材形成一體結構，藉由形成該一體結構之上述支持部固著 於上述底座之基座之構造，使底座之製造步驟變為極容 易。 上述底座，係藉著上述至少2條之導線以絕緣體封著 圓筒狀環體而形成之型體且形成寬幅，藉由設有散熱佳之 --------------裝··-------訂----------線 ί請先M讀背面之注意事項再填寫本頁) ' 本紙張尺度_巾园國家辟（CNS—雜咖X 297公/) 4 311884 Λ7 Λ7 經濟部智慧財產局員工消費合作.社_ 五、發明說明（5 ) --- 散熱部’可製造具有加大DVD用玺—H u 二 等之晶片尺寸、發熱量 大之雷射晶片之半導體裝置e 依據本發明之光拾訊玛驻罢 .. 甙益裝置，係可製造具有：半導體 雷射裝置，繞射格子：用以脾L -I., 用以將上逑半導體雷射裝置射出之 光與反射回來之光分離之光速分裂 疋刀较范，將上述來自半導體 雷射裝置之光東作為平行光之平并土 Μ & 疋^十仃先管透鏡；將上述來自 半導體雷射裝置之光束彎曲於畜备士二 、直角方向之反射鏡；將上述 光束聚焦於光碟上之接物鏡；及藉由光束分裂器將來自上 述光碟之反射光分離，並加以檢剛之光檢測器所構成，而 上述半導體雷射裝置係為申請專利範圍第！項所述之半導 體雷射裝置所構成。 [圖式之簡要說明] 第1 (a)圖至第U0圖係顯示根據本發明之半導體雷射 裝置之實施形態之構造說明圖。 第2 (a)圖至第2 (b)圖係顯示故大第1 (a)圖至第1 (c)圖 之散熱部之另一構造例的說明圖。 第3圖係顯示本發明之半導體雷射裝置中，另一實施 形態之構造說明圖s 第4圖係顯示本發明之半導體雷射裝置中.另一實施 形態之構造說明圖° 第5 (a)圖篆第5 ( b !圖像顯不本發明之半導體雷射裝置 中 '另..一實施形態之構造說明圖。 第6圖係根攄本發一月 拾訊器之構成說明圖. 第。圖係根攄本發4導體雷射裝置鴣成％的說 (請先閱讀背面之注意事項再填寫本頁) 訂—' ά------ ί 'ts%m %^' Μ1884 經濟部智慧財產局員工消费合作社印 463431 A7 _B7__ 五、發明說明（6 ) 明圖。 第8(a)圖至第8(b)圖係根據本發明之半導體雷射裝置 之構成例的說明圖。 [元件符號說明] -------------裝--------訂i'-------線/ (請先閱讀背面之注意事項再填寫本頁) 1 底座 2 雷射晶片 3 副安裝座 4 受光元件 5 蓋子 6 透明板 7 接著劑 8 金線 11 基座 12 支持部 13 散熱部 14 導線 15 共同導線 16 導線 17 玻璃 18 圓環 19 玻璃 20 底座 21 基座 22 散熱部 23 導線 24 共同導線 25 導線 27 環部 28 台座部 26, 29 玻璃 31 雷射晶片 32 受光元件 33 電線 34 副安裝座 35 蓋子 35a 貫通孔 36 玻璃板 37 接著劑 51 格子 50 半導體雷射裝置 52 光束分裂器 53 透鏡 54 三陵鏡 55 接物鏡 本紙張尺度適用中國國家標準（CNS)A4規格（21〇χ 297公釐） 6 311884 1—--- Λ7 B7 經濟部智慧財產局—1」，.|-1費1>'^.;1. 五、發明說明（7 ) 56 光碟 57 四透鏡 58 光檢測器 [發明之最佳實施形態] 以下，參照圖面說明本發明之半導體雷射裝置。本發 明之半導體雷射裝置的一個實施形態之剖面說明圖及其底 座部之斜視及俯視說明圖係分別如第1 ( a )圖至第1 ( c 圖所示，其中至少2條導線U、1 6突出固定於底座1兩側， 底座1的一側之底部（基座丨丨）側設有支持部1 2。而且， 在該支持部1 2之上部，开;^ 士、亡& ,丄& 屯成有向上述突出之2條導線1 4、 1 6惻延伸之寬幅的散赦邮 幻散热部13。此散熱部13安裝有雷 片2。 底座1係由基座η、 +，人 无持部丨2、散熱部1. 3藉軟質玻璃 17封&固定於設在基 β 主1之貫通孔之導線14'16、及直 接熔接於基座丨1之连 ^ 1 , 。線丨）所構成。第1圖顯示之例中， 基座.、支持部12係為— ' 办，、却r L 、局—體，其係以冷鍛法使例如鐵板 的中〜部形成作為支 之厚度為例如以h 〇 ~之突起部而形成者，基座】1 係如第丨圖之蘭I為3.3議’又，支持部U 中之部分，與基座n =中的虛線所示-夫在導線卜U ，導線丨4 貝通孔間之寬度相同程度或略窄· 在守踝丨4 >丨6之後* 線丨416之令 變見而形成為〗丨_程度（與導 V貫通；二距相同程度又..用以固著導線丨[ ;6〜貝4孔的直徑為〇、 墓埝卜， ' m m，其間距則為丨1 m m - 4 . 5 6，係由例ν Λ、 r: … 卬π)直徑之r e.. In ]合金 軟質破堪i 構 ' -：jf,；.： ------------— ;J n n.:n直：搜.之 be --------------裝--------訂---------線---------- f請先閱讀背面之注音？事項再填寫本頁) 4 6 3 431 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（8 ) 封著於基座11之貫通孔。共同導線15亦以相同材料構成， Ί*旦為與基座II電盡 电乳連接而以熔接等方式直接固著於基座 11° …散熱部13 ’在第1圖所示的例中，係與支持部12分芳 形成’而由例如鋼塊等構成，且係如第！（c)圖中之俯福 :明圖所示’導線14、16側超出支持部。而形成寬幅部， '、在亚列的導線14、16之排列方向的寬度A為例如 l‘4mm ’其尚度B則為l lmm，而藉由焊接等固著於支持 部12亦即’雖然支持部12前面的寬度僅為貫通孔之間 隙邛’亦即為〇.4_ ’但散熱部13前面的寬度卻可寬至 Umm。因此’可確實固著用以連接雷射晶月之副安裝座， 5時可#效率地散除傳至副安裝座之雷射晶片的熱。 。第1圖所示之例t，於導線14、16並列的方向（橫方 向）上，以比支持部12的寬度更寬的寬幅形成散熱部η 的寬度，但亦可例如第2圖所示，於導線14、16之後侧以 較寬的寬度形成支持部12 ’然後，以此支持部12再向導 線側(第2圖之C方向)拓寬的方式形成寬幅的散熱部13， 或同時在導線並排的方向兩側形成較寬的寬度。重點在於 使散熱部13之俯視面積，形成得比支持部12大，而且形 成為其上安裝的雷射晶片的發光部位於底座之中心部之寬 闊面積的特徵。又，上述之例中，散熱部13雖與支持部 12為分別形成，但如後述地與支持部12 一體成形’或與 基座11以及支持部u 一體成形亦可。 雷射晶片2雖係以射出雷射光之方式而形成，但 . 1 ~裝--------訂----------線J (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度舶中國國㊣準(CNS)A4規格公釐) 8 311884 經濟邹智慧时產局員二.;£?費合.江.|*::-:.,欠 五、發明說明（9 CD用者，其大小則為25〇umX25〇um，dvd用者則變大為 2bOumX5〇Oum。但是，即使如此，亦非常小，其取用容易’ 甚至為確保散熱性，通常連接於由〇.8mmx lmm大小之矽 基板所構成之田4安裝座3上，，而後，一側之電極係藉由金 等之搭線連接於副安裝座3 .且從其背面用導電性接 者劑經由散熱部u '支持部12、基座n而連接於共 線 1 5 ;另一伯_1夕啦 之電極(背面電極）係經由副安裝座3上之連 接部3a以金線8等之搭線而與導線u連接。 、、裝有此雷射晶片2之副安裝座3係介由吸著筒搬送， '安裝於散熱部1 3。此外，用以監測雷射晶片，之發光輸 元件4同樣設於副安裝座13,其一側之電：係」 金 接.於』導線b另-側電極係藉由 搭線而與導線丨6電氣連接。再者，此受光元件 亦可：副安裝座3分別設置。 .(^ 片2之周圍，藉由熔接於底座1而設有蓋子 之全周設：有著蓋子5之底面(與底座11接觸部分) 部份，C’利用電阻溶接時'使電流集中於此 一周岔封接著。蓋子5以銅等之熱傳導較佳之 材料構成為佳，彳 爾良：亦可用鐵繼金〜 内面防止二银屬又.施加無光澤銀電鑛法等，易於 邱一右：射故較佳此外' 於蓋子5之頂部之啦 k過之㈤部：貫通孔、5 a 於此窗部 金 -------------裝--------訂---------線--------- (請先閱讀背面之注意事項再填寫本頁) j-v- 籍 6 泜熔點破蟑荨棲著劑 而 .rfrC 6又 有著破螭芎之透明板 '\}m 463431 A7 五、發明說明（10) 藉由本發明之半導體雷射裝置，因可形成散熱部幅寬 大於支持部之寬度，故即使底座之導線間隔狹窄（不論導 線間隔如何），雷射晶片亦可安裝於可充分散熱之大散熱 部。因此’即使DVD用之晶片尺寸大、動作電流大、發 熱篁大之雷射晶片，亦可安裝於外徑小之底座°而且，即 使是習知CD用之發熱量小之較小晶片，為了使外徑形成 直控3.3 mm’而藉由冷鍛法製造之底座，因需要空間以容 納導線固著用玻璃之直徑或用以熔接蓋子之部位，故不能 達成小型化《僅能使用圓筒狀環體來小型化，但依據本發 明’即使藉由冷鍛法製造之底座，亦可製造直徑33π1πι之 小型產品。 藉由可利用此金屬性之底座，如前述地將蓋子以電阻 炼接設於底座上。結果，在大幅提昇氣密性的同時，因為 屋入作業所需之焊劑鍍層不再需要，而導線因不使用焊劑 鍵層而可大幅提高接線性。 在前述之例中，散熱部13與支持部12係以不同的材 料分別製作，並以焊接等方法固著於支持部1 2上。依據此 分別形成時’因可使用熱傳導尤其良好之銅塊等而較佳， 但如第3圖中其他例子之底座部之斜視說明圖所顯示者， 亦可藉由冷鍛法以鐵板一體形成基座u、支持部12與散 熱塊部13。使用一體形成時，即具有不需固著散熱塊部 13、並以優良精密度製造之優點。 此外，在其他例中，如第4圖中同樣底座部之斜視說 明圖所顯示者，藉由銅板之衝切和彎折而一體形成支持 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂1------- 經濟部智慧財產局員工消費合作社印製 311884 經濟部智慧財產局 3-3-::!1費合^·-·'·'·'.- 度 Λ： 五、發明說明（11) 1 2和散熱塊部Π，而以、搜私^ Λ焊接或熔接將此—艚 12固裝於基座之構造亦可。又， 體成f之支持部 散熱部，可在有限的空門⑽4圖所示，藉由彎折 其他部分與上述之例相同 棱昇散熱性β 省略其說明。 ㈣部份標註相同之符號並 第5(a)圖與第5 (b)圖係分別 顯示其他例子之說明圖，其為/之剖面的 ^ 〜農搜3 . jmm之]、荆 封裝體中，設置寬幅之散敎Α ^ 舣熱坪，俾可安裝dvd用等大帝 射晶片。亦即，藉由前述鋼板等 田 攸寻之衡壓加工而形成圓 之圓環18’且藉由玻璃Μ固封導衊 封導線1 4、1 6於此圓環1 g 内’以形成底座1，與此圓環1 8 , 展丨8以—體方式形成支持部12 及共通導線15 ^又，此支持部丨.）^ 又符邛丨2上，藉由固裝比支持部 更寬幅之散熱部1 3而形成。. '此外，底座]以外之其他邻八 係與顯示於第丨圖之例相同， 刀 在相同的部分附予相同之符 號’並省略其說明=在第5 ( a彳_ $ ^ u 圖至第5(b)圊中，受光 元件雖未圖示，但與上述例同樣設置有受光元件， 第6圖係利用此小外徑丰道她+ & # 丁導體晷射裝置構成薄型拾訊 器例之概略說明圖。亦即，將半導體雷射裝f 5〇棒向配 置-藉由繞射格子㈣來自半導體雷射裝置之光束實施分 割‘例如在三光束法中，將雷射光束分割為三，藉由可分 離出射光與反射光之先束分裂器52 '由承杆光管透錆Η 形成平行光束m棱鏡4射镜A將光未f商90 袖方向卜由接物鏡^聚焦於㈣或CD等先堪 然後將㈣光碑^^先藉由光幸分裂器 、·>··:·喝 Ϊ.:.··，一〜 .· . _ i"_S / /1 . · - ... 、 . Τ· 作》·Μρ*ιι<υκ··«*«Ι.· .y . , , ~ 1 11 ^)1884 裝--------訂---------線— f請先閱讀背面之注意事項再填寫本頁) 4 6 3-^3 經濟部智慧財產局員工消費合作社印*-衣 A7 五、發明說明（^ 52,經過凹透鏡57等，再藉由光檢測器y檢測，此外， 在第6圖，半導體雷射裝置5〇大致與光檢測器58位於同 一面（xy面）。 如此，藉由橫向配置半導體雷射裝置5〇，一面發射與 DVD等平行方向之雷射光束，一面檢測dvd等之表面凹 凸之構成，可使光拾訊器之薄型化依存於半導體雷射裝置 之外徑，而藉由此外徑之縮小，可以構成相當薄型之光拾 訊器。如前所述，藉由使用直徑3 3mm之本發明半導體雷 射裝置’可獲得厚度為5mm之光拾訊器。 依據本發明，即使使用以冷鍛法形成之具有金屬基座 之底座，亦可獲得直徑3.3mm之非常小型半導體雷射，故 不會產生元件的變形等’而且，散熱亦更佳，可獲得非常 度可#性之半導體雷射裝置。甚至’藉由使用具有金屬 基座之底座’而可熔接蓋子，且易於獲得很高的氣密性。 甚至’散熱部不受導線間隔的限制，而可充分增大而 形成’故即使像DVD用之晶片尺寸較大或發熱量較大之 雷射晶片’亦可以安裝而不會加大底座之外形。 結果，即使是DVD用之拾訊器，亦可形成非常薄型 之拾訊器。而且，若使用本發明之半導體雷射裝置，對於 使用筆記型電腦等雷射光源之電子機器之薄型化有相當大 的貢獻。 !裝--------11--^-------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 12 311884By forming the structure in which the heat-dissipating portion is connected to the support portion, a copper material having good thermal conductivity can be used as the heat-dissipating portion D. The base is formed by fixing the above two wires with an insulator to a through-hole of a metal base. Since the support portion and the heat dissipation portion are formed as a body with the base, the dimensional accuracy is improved, and assembly is facilitated. The support portion and the heat dissipation portion are metal members, for example, a metal block or a plate is used to form an integrated structure. The support portion forming the integrated structure is fixed to the base of the base, so that the manufacturing steps of the base become extremely easy. . The above base is a shape formed by enclosing a cylindrical ring body with an insulator through the above at least two wires and forming a wide width. By providing good heat dissipation ------------- -Packing ·· ------- Order ---------- Line ί Please read the notes on the back before filling in this page) '' Paper size _ towel garden country (CNS—miscellaneous Coffee X 297 /) 4 311884 Λ7 Λ7 Consumer cooperation of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. _ V. Description of the invention (5) --- The heat sink can manufacture wafers with a larger seal size for DVD-Hu II 、 Semiconductor device with large heat emitting laser chip e According to the invention, the optical pickup device is based on the glycoside device, which can be manufactured with: semiconductor laser device, diffraction grid: for the spleen L -I., A light-speed splitting guillotine used to separate light emitted from the semiconductor laser device from the reflected light, and the light east from the semiconductor laser device as the level of parallel light M & 疋 ^ 十 仃Tube lens first; the above-mentioned beam from the semiconductor laser device is bent to the right-angle reflector, and the above-mentioned beam is focused on the optical disc. Mirror; and by the beam splitter from said reflected light separating optical disks, and to be the subject of a photodetector immediately formed, and said semiconductor laser device is a patent application based on the range! The semiconductor laser device described in the item. [Brief description of the drawings] Figures 1 (a) to U0 are explanatory diagrams showing the structure of the embodiment of the semiconductor laser device according to the present invention. Figs. 2 (a) to 2 (b) are explanatory diagrams showing another example of the structure of the heat radiation part of Figs. 1 (a) to 1 (c). Fig. 3 is a diagram showing the structure of another embodiment of the semiconductor laser device of the present invention. Fig. 4 is a diagram showing the structure of the semiconductor laser device of the present invention. Fig. 5 (a ) Figure 5 (b! The image shows the structure of another embodiment of the semiconductor laser device of the present invention .. Figure 6 is a diagram illustrating the structure of a pickup in January. No. The figure is based on the percentage of the 4-conductor laser device of the present invention (please read the precautions on the back before filling out this page) Order — 'ά ------ ί' ts% m% ^ 'Μ1884 Printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs 463431 A7 _B7__ V. Description of the Invention (6) Illustrations. Figures 8 (a) to 8 (b) are explanatory diagrams of a configuration example of a semiconductor laser device according to the present invention [Description of component symbols] ------------- Installation -------- Order i '------- line / (Please read the precautions on the back before filling (This page) 1 Base 2 Laser chip 3 Sub-mount 4 Light receiving element 5 Cover 6 Transparent plate 7 Adhesive 8 Gold wire 11 Base 12 Support 13 Heat sink 14 Lead 15 Common lead 16 Lead 17 Glass 18 Ring 19 Glass 20 Base 21 Base 22 Heat sink 23 Wire 24 Common wire 25 Wire 27 Ring 28 Pedestal 26, 29 Glass 31 Laser chip 32 Light receiving element 33 Electric wire 34 Sub-mount 35 Cover 35a Through hole 36 Glass Plate 37 Adhesive 51 Lattice 50 Semiconductor Laser Device 52 Beam Splitter 53 Lens 54 Sanling Lens 55 Receive Objective Lens This paper standard is applicable to China National Standard (CNS) A4 (21〇χ 297 mm) 6 311884 1 --- -Λ7 B7 Intellectual Property Bureau of the Ministry of Economic Affairs—1 ",. | -1 fee 1 > '^ .; 1. V. Description of the invention (7) 56 disc 57 four lens 58 light detector [best embodiment of the invention] The following The semiconductor laser device of the present invention will be described with reference to the drawings. A sectional explanatory view of an embodiment of the semiconductor laser device of the present invention and an oblique view and a plan view of a base portion thereof are as shown in Figs. 1 (a) to 1 respectively. (As shown in the figure, at least two wires U, 16 are protruded and fixed on both sides of the base 1, and a support portion 12 is provided at the bottom (base 丨 丨) side of one side of the base 1. Moreover, the support portion 12 1 2 上部 ， 开; ^ 士 、 死 & am p;, 丄 & Tuncheng has a wide-ranging and ambiguous postal heat sink 13 extending to the two protruding wires 1 4 and 16 above. The heat sink 13 is provided with a thunder plate 2. The base 1 is composed of a base η, +, a person without holding part 2 and a heat dissipation part 1.3. It is sealed by soft glass 17 & fixed to a wire 14'16 provided in a through hole provided in the base β main 1 and directly welded to The connection of the base 丨 1 ^ 1,. Line 丨). In the example shown in FIG. 1, the base 12 and the supporting portion 12 are-办, but r L, and the round body, which are formed by cold forging to form, for example, the central portion of an iron plate as a branch with a thickness of For example, formed by the protrusion of h 0 ~, the base] 1 is as shown in the figure I, the I is 3.3, and the part in the support U is shown by the dotted line in the base n =- Lead wire U, lead wire 丨 4 The width between the through holes is the same degree or slightly narrower · After the ankle guard 丨 4 > 丨 6 * The order of 416 is changed to form 丨 丨 degree (through the guide V; Two distances of the same degree are also used to fix the wire 丨 [; 6 ~ 4 diameter of 4 holes is 0, tomb 埝 bu, 'mm, and the distance is 丨 1 mm-4. 56, by example ν Λ , R:… 卬 π) diameter of r e .. In] alloy soft rugged structure--jf,;.: ------------—; J n n.:nStraight : Search. Of be -------------- install -------- order --------- line ---------- f Please read the Zhuyin on the back? Please fill in this page again for matters) 4 6 3 431 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (8) Sealed in the through hole of the base 11. The common wire 15 is also made of the same material, and it is directly fixed to the base 11 ° by welding or the like for the electric exhaust connection with the base II. The heat sink 13 ′ In the example shown in FIG. 1, The system and the support unit are formed 12 minutes apart, and are composed of, for example, steel blocks, and the system is like the first! (C) Blessing in the picture: As shown in the picture, the wires 14 and 16 extend beyond the support. To form a wide portion, 'the width A in the arrangement direction of the wires 14 and 16 in the sub-column is, for example, 1'4mm', and the degree B is l1mm, and it is fixed to the support portion 12 by welding or the like, that is, 'Although the width in front of the support portion 12 is only the gap of the through hole 邛', that is, 0.4_ ', the width in front of the heat dissipation portion 13 can be as wide as Umm. Therefore, the sub-mount for connecting the laser crystal moon can be fixed firmly, and the heat of the laser chip transmitted to the sub-mount can be efficiently dissipated at 5 o'clock. . In the example t shown in FIG. 1, the width of the heat radiation portion η is formed in a direction (horizontal direction) in which the wires 14 and 16 are juxtaposed to each other, and the width of the heat dissipation portion η is wider than the width of the support portion 12. It is shown that the support portion 12 ′ is formed with a wider width on the rear side of the wires 14 and 16, and then the support portion 12 is widened to the wire side (direction C in FIG. 2) to form a wide heat dissipation portion 13, or At the same time, a wider width is formed on both sides of the wires in the side-by-side direction. The important point is that the planar area of the heat dissipation portion 13 is larger than that of the support portion 12 and a feature that the light emitting portion of the laser chip mounted thereon is located in a wide area at the center of the base is featured. In the above example, although the heat radiating portion 13 is formed separately from the support portion 12, it may be formed integrally with the support portion 12 as described later or may be formed integrally with the base 11 and the support portion u. Although the laser chip 2 is formed by emitting laser light, but 1 ~ installed -------- order ------------ line J (Please read the precautions on the back before (Fill in this page) This paper is a standard of China National Standard (CNS) A4 mm. 8 311884 Economy Zou Zhishi Production Bureau Member II .; £? Fees. Jiang. | * ::-:. Note (9 CD users, its size is 25um × 25〇um, dvd users become 2bOumX50〇um. However, even so, it is very small, easy to access and even to ensure heat dissipation, usually connect On the Tian 4 mounting base 3 composed of a silicon substrate with a size of 0.8 mm x 1 mm, the electrode on one side is connected to the sub mounting base 3 by a wire such as gold and the like, and conductively connected from the back surface thereof. The agent is connected to the common line 1 5 through the heat dissipation part u 'support part 12 and the base n; the other electrode (back electrode) is a gold wire 8 through a connection part 3a on the sub-mount 3 The wire is connected to the wire u. The sub-mount 3 containing the laser chip 2 is transported through a suction tube and is' mounted on the heat sink 1 3. In addition, it is used to monitor the laser chip. Light emitting input element 4 The sample is set on the sub-mount 13, and the electric power on one side of it is: "Gold connection." The wire on the other side is electrically connected to the wire 6 through wire bonding. Furthermore, this light receiving element can also be: The mounting base 3 is provided separately. (^ The periphery of the sheet 2 is provided with a cover by welding to the base 1: the bottom surface of the cover 5 (the part contacting the base 11) is provided, and C 'is welded by resistance 'Concentrate the current to this one-week bifurcation and seal. The cover 5 is preferably made of copper and other materials with good heat conduction. Er Erliang: iron can also be used to prevent the second silver from being used on the inner surface. Matte silver electro-mineral method, etc. It ’s easy to Qiu Yi right: it ’s better to shoot. Besides, it ’s on the top of the lid 5: the through hole, 5 a in this window gold. ------- Order --------- Line --------- (Please read the precautions on the back before filling this page) jv- Ji 6 The coating is .rfrC 6 with a broken transparent plate '\} m 463431 A7 V. Description of the invention (10) With the semiconductor laser device of the present invention, since the width of the heat radiation portion can be larger than the width of the support portion, Even if the base guide With narrow spacing (regardless of the lead spacing), the laser chip can also be mounted on a large heat sink that can sufficiently dissipate heat. Therefore, 'even if the DVD chip has a large size, a large operating current, and a large heating chip, it can also be mounted on Base with small outer diameter ° Furthermore, even for smaller wafers with small heat generation used in conventional CDs, the base manufactured by cold forging in order to form a direct control of 3.3 mm ', requires space to accommodate the wire The diameter of the glass is used or the part used for welding the lid cannot be miniaturized. "Only a cylindrical ring can be used for miniaturization, but according to the present invention, even if the base is manufactured by cold forging, the diameter can be manufactured. 33π1πι small product. By using this metallic base, the lid is placed on the base by resistance welding as described above. As a result, while the air tightness is greatly improved, the flux plating required for the housework operation is no longer needed, and the wiring can be greatly improved by not using a flux bonding layer. In the aforementioned example, the heat radiating portion 13 and the supporting portion 12 are made of different materials, and are fixed to the supporting portion 12 by welding or the like. When formed separately based on this, it is better to use a copper block with particularly good heat conduction, but as shown in the oblique view of the base part of the other example in Figure 3, it can also be integrated with the iron plate by cold forging. A base u, a support portion 12 and a heat sink block portion 13 are formed. When integrally formed, there is an advantage that the heat sink block portion 13 does not need to be fixed and is manufactured with excellent precision. In addition, in other examples, as shown in the oblique view of the same base part in Figure 4, it is formed by punching and bending of the copper plate to support this paper. The Chinese standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) -------- Order 1 --------- Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 311884 Intellectual Property of the Ministry of Economic Affairs Bureau 3-3-::! 1 fee together ^ ·-· '·' · '.- Degree Λ: 5. Description of the invention (11) 1 2 and the heat sink block Π, and search for ^ Λ welding or welding This— 艚 12 can be fixed to the base. In addition, the support part and the heat dissipation part of the body f can be shown in the limited hollow door 4 as shown in the figure. The other parts are the same as the above example by bending. The heat dissipation β is omitted and the description is omitted. ㈣Parts are marked with the same symbols, and Figures 5 (a) and 5 (b) are explanatory diagrams showing other examples, which are ^ of the cross section of ~~ of Nongsou 3.jmm], in Jing package , Set a wide spread of hot air 敎 ^ ^ hot plate, you can install DVDs and other emperors to shoot chips. That is, a circular ring 18 ′ is formed by the equalizing process of the aforementioned steel plate and other steel plates, and the wire 14 is sealed by the glass M to seal the wire 1 4 and 16 to form a base. 1. With this ring 1 8, the support section 12 and the common wire 15 are formed in a single body. ^ Also, this support section 丨.) ^ It is wider than the support section by being fixed. A heat radiation portion 13 is formed. . In addition, the other eight lines other than the base are the same as the example shown in the figure, and the knife is attached with the same symbol in the same part 'and its description is omitted = in the 5th (a 彳 _ $ ^ u figure to Although the light-receiving element is not shown in Fig. 5 (b), a light-receiving element is provided in the same manner as in the above example. Fig. 6 shows the use of this small-diameter beam channel + & A schematic illustration of the device example. That is, the semiconductor laser device f 50 rods are arranged-the light beam from the semiconductor laser device is divided by a diffraction grid. For example, in the three-beam method, the laser beam is divided. For the third, the first beam splitter 52 'which can separate the emitted light and the reflected light is formed by the beam tube to form a parallel beam. The m prism 4 lens A focuses the light in the direction of the sleeve 90 by the objective lens. Yu ㈣ or CD and so on, and then ㈣ 碑 光 石 ^^ first by using the optical splitter, > ... :: drink Ϊ.: .., a ~ ... _ I " _S / / 1. · -...,. Τ · 作》 · Μρ * ιι < υκ ·· «*« Ι. · .Y.,, ~ 1 11 ^) 1884 ---- Line — f Please read the notes on the back first (Fill in this page) 4 6 3- ^ 3 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs *-衣 A7 V. Description of the invention (^ 52, passed through a concave lens 57, etc., and then detected by a light detector y, in addition, in the 6th In the figure, the semiconductor laser device 50 is located on the same plane (xy plane) as the photodetector 58. Thus, by arranging the semiconductor laser device 50 laterally, a laser beam parallel to a DVD and the like is emitted while dvd is detected. The structure of the surface unevenness can make the thinning of the optical pickup depend on the outer diameter of the semiconductor laser device, and by reducing the outer diameter, a relatively thin optical pickup can be constructed. By using the semiconductor laser device of the present invention with a diameter of 3 to 3 mm, an optical pickup having a thickness of 5 mm can be obtained. According to the present invention, even when a base with a metal base formed by a cold forging method is used, a 3.3 mm diameter can be obtained. Very small semiconductor laser, so there is no deformation of the components, etc., and the heat dissipation is better, and a semiconductor laser device with very high reliability can be obtained. Even by using a base with a metal base, it can be welded cover It is easy to obtain high air-tightness. Even the 'radiating part can be sufficiently enlarged and formed without being restricted by the lead interval', so even if the size of the wafer for DVD or the heat generation is large 'It can also be installed without enlarging the shape of the base. As a result, even a pickup for a DVD can be formed into a very thin pickup. Moreover, if the semiconductor laser device of the present invention is used, a notebook type is used. Computers and other laser light sources have made considerable contributions to reducing the thickness of electronic equipment.! -------- 11-^ ------- (Please read the precautions on the back before filling out this Page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 12 311884