JP2993286B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2993286B2 JP2993286B2 JP22054292A JP22054292A JP2993286B2 JP 2993286 B2 JP2993286 B2 JP 2993286B2 JP 22054292 A JP22054292 A JP 22054292A JP 22054292 A JP22054292 A JP 22054292A JP 2993286 B2 JP2993286 B2 JP 2993286B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- contact
- electrode
- plate
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、複数の半導体素体を一
つの容器中に収容し、その電極を容器外に引き出された
端子に接続する、例えば絶縁ゲート型バイポーラトラン
ジスタ (ＩＧＢＴ) モジュールのような半導体装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulated gate bipolar transistor (IGBT) module for accommodating a plurality of semiconductor elements in a single container and connecting its electrodes to terminals drawn out of the container. The present invention relates to such a semiconductor device.
【０００２】[0002]
【従来の技術】例えば複数個のＩＧＢＴのチップを一つ
の容器に収容して並列接続するモジュールでは、チップ
の下面にあるコレクタ電極は、導電性基板上にチップを
固着することにより相互に接続することができるが、チ
ップの上面にあるエミッタ電極は、容器外に引き出され
て端子となる導体に個々に接続しなければならない。従
来はこのような接続をアルミニウム導線のボンディング
で行い、電流容量に応じて一つのチップに複数の導線を
ボンディングしていた。2. Description of the Related Art For example, in a module in which a plurality of IGBT chips are housed in one container and connected in parallel, collector electrodes on the lower surface of the chips are connected to each other by fixing the chips on a conductive substrate. However, the emitter electrodes on the upper surface of the chip must be individually connected to conductors that are drawn out of the container and become terminals. Conventionally, such a connection is made by bonding aluminum conductors, and a plurality of conductors are bonded to one chip according to current capacity.
【０００３】[0003]
【発明が解決しようとする課題】最近、産業用あるいは
車両用として、従来よりさらに大容量で、かつコンパク
ト, 低インダクタンスのＩＧＢＴモジュールが必要とな
ってきた。しかしながら、従来のエミッタ側の接続を30
0 μｍ程度の直径のAl導線ボンディングによっているモ
ジュール構造では、コレクタ側からの熱の放散はできる
が、エミッタ側からの熱の放散はできないため、モジュ
ールが大容量になればなるほどモジュール内に集積する
ＩＧＢＴチップの数が沢山必要となり、モジュール自身
の大型化がさけられない状況である。また、必然的にモ
ジュール内でのボンディングされるAl導線の数が多くな
り、数十本から数百本にもなるため、それらの持つイン
ダクタンスが大きくなってしまい、周波数の高い分野へ
の適用が困難となってきている。Recently, there has been a need for an IGBT module having a larger capacity, a smaller size, and a lower inductance for industrial use or vehicle use. However, the conventional connection on the emitter side is 30
In a module structure using Al wire bonding with a diameter of about 0 μm, heat can be dissipated from the collector side, but heat cannot be dissipated from the emitter side. In this situation, a large number of IGBT chips are required, and it is unavoidable to increase the size of the module itself. In addition, the number of Al conductors to be bonded in the module inevitably increases, from several tens to several hundreds, which increases their inductance, making them applicable to high-frequency applications. It's getting harder.
【０００４】本発明の目的は、ＩＧＢＴモジュールに限
らず、半導体素体上面からの熱放散を良好にすることに
よって大容量化するときにも半導体素体の数の増大を抑
えることができ、かつ上面電極への接続のために内部イ
ンダクタンスの大きくならない半導体装置を提供するこ
とにある。[0004] The object of the present invention is not limited to the IGBT module, and it is possible to suppress the increase in the number of semiconductor elements even when the capacity is increased by improving the heat dissipation from the upper surface of the semiconductor element. An object of the present invention is to provide a semiconductor device in which internal inductance does not increase due to connection to a top electrode.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の半導体装置は、一つの容器内に容器外部
に一面が露出する一つの端子体と、一面に主電極および
絶縁ゲート電極を有する複数個のＩＧＢＴ素体が収容さ
れ、各素体の前記主電極が被加圧面を有し、該被加圧面
に接触するその熱膨脹係数が半導体材料の熱膨脹係数に
近似した金属よりなる接触体を有し、前記主電極が前記
接触体を介して前記端子体に電気的に接続されるものに
おいて、前記接触体と容器外部に一面が露出する一つの
端子体との間にそれぞれ存在する電気良導性のばね体に
より前記電極に対して加圧されるものとするかまたは、
前記主電極が絶縁ゲート構造直上を避けた領域上に被加
圧面を有するものとする。あるいは、本発明の半導体装
置は、一つの容器内に複数個の半導体素体が収容され、
各素体の一面の電極に、その熱膨脹係数が半導体素体の
熱膨脹係数と近似している金属よりなり、導電板を介し
て熱良導性の加圧体と結合された接触体が接触し、その
加圧体と容器外部に一面が露出する一つの端子体との間
にそれぞれ存在する熱良導性のばね体により前記電極に
対して加圧され、前記導電板は各素体に共通で前記端子
体に電気的に接続されたものとする。そして、各半導体
素体の他面の電極と容器外部に一面が露出する他の端子
体との間にその熱膨脹係数が半導体材料の熱膨脹係数に
近似した金属よりなる支持板がそれぞれ介在することが
有効である。In order to achieve the above object, a semiconductor device according to the present invention comprises, in a single container, one terminal body whose one surface is exposed outside the container, and one surface having a main electrode and an insulating gate. A plurality of IGBT bodies having electrodes are accommodated, and the main electrode of each body has a surface to be pressed, and the coefficient of thermal expansion in contact with the surface to be pressed is made of a metal whose coefficient of thermal expansion is close to the coefficient of thermal expansion of the semiconductor material. One having a contact body, wherein the main electrode is electrically connected to the terminal body via the contact body, one surface of which is exposed to the contact body and the outside of the container.
To the electrically conductive spring body that exists between the terminal body and each
More pressurized against the electrode, or
The main electrode is applied on a region other than immediately above the insulated gate structure.
It shall have a pressure surface. Alternatively, in the semiconductor device of the present invention, a plurality of semiconductor elements are housed in one container,
A contact body made of a metal whose coefficient of thermal expansion is similar to that of the semiconductor body and connected to a pressurizing body having good thermal conductivity via a conductive plate comes into contact with an electrode on one surface of each body. The electrodes are pressurized by the springs having good thermal conductivity existing between the pressurizing body and one terminal body whose one surface is exposed to the outside of the container, and the conductive plate is common to each element body. Is electrically connected to the terminal body. A support plate made of a metal whose coefficient of thermal expansion is close to the coefficient of thermal expansion of the semiconductor material may be interposed between the electrode on the other surface of each semiconductor body and the other terminal body whose one surface is exposed outside the container. It is valid.
【０００６】[0006]
【作用】各半導体素体の一つの容器内に容器外部に一面
が露出する一つの端子体と、一面に主電極および絶縁ゲ
ート電極を有する複数個のＩＧＢＴ素体が収容され、各
素体の前記主電極が被加圧面を有し、該被加圧面に接触
するその熱膨脹係数が半導体材料の熱膨脹係数に近似し
た金属よりなる接触体を有し、前記主電極が前記接触体
を介して前記端子体に電気的に接続されるものにおい
て、前記接触体と容器外部に一面が露出する一つの端子
体との間にそれぞれ存在する電気良導性のばね体により
前記電極に対して加圧されるものとすることにより、複
数の半導体素体の厚さばらつきがばね体により補償さ
れ、一面側からも放熱が可能となる。そして、電流も金
属よりなる接触体を通じて直接端子体に導くか、接触体
から共通の導電板を通じて端子体に導くことができる
か、あるいは電極体から共通接続体を介して取出すた
め、各素体の電極との導線のボンディングによる接続が
不要となり、インダクタンスが小さくなる。In one container of each semiconductor body, one terminal body whose one surface is exposed to the outside of the container and a plurality of IGBT bodies each having a main electrode and an insulated gate electrode on one surface are accommodated. The main electrode has a surface to be pressed, and has a contact body made of a metal whose coefficient of thermal expansion in contact with the surface to be pressed is close to the coefficient of thermal expansion of a semiconductor material, and the main electrode is connected to the main electrode through the contact body. It is electrically connected to the terminal body shall smell
And one terminal whose one surface is exposed to the contact body and the outside of the container.
With the spring body of good electrical conductivity that exists between
By shall be pressed against the electrode, double
The thickness variation of a number of semiconductor elements is compensated by the spring element.
Thus, heat can be released from one side. The current can also be led directly to the terminal body through a contact body made of metal, or can be led from the contact body to the terminal body through a common conductive plate, or can be taken out from the electrode body through a common connection body. This eliminates the need for connection of the conductor to the electrode by bonding, and reduces the inductance.
【０００７】[0007]
【実施例】以下図を引用してＩＧＢＴモジュールにおけ
る本発明の実施例について述べる。図１に示した実施例
は放熱の役割をする部材が同時に電流通路となる構造で
ある。図においてシリコン (Si) からなるＩＧＢＴチッ
プ１の上面には図２の平面図にも示すようにゲート構造
の上部を避けてエミッタ集電電極11が設けられ、下面に
はコレクタ電極12が設けられている。チップ１の周縁に
は耐圧確保のための端面13が形成されている。コレクタ
電極12は、Siとほぼ熱膨脹係数の等しいモリブデン (M
o) からなる支持板２にろう付けまたは融着されてい
る。そして、このMo板２は一面が容器外面に露出してい
る銅からなるコレクタ端子板３に中間板20を介してねじ
41により取り付けられている。しかしねじじめの代わり
にろう付けしてもよい。一方、エミッタ集電電極11の上
面にもMo接触板５が接触している。このMo接触板５と容
器外面に露出するエミッタ端子板７の間にリング状ばね
６が介在する。このばねは２mm位の厚さのばね鋼よりな
り、電気および熱の伝導性が良好であり、Mo板５および
端子板７にねじ42により止められている。従ってチップ
１とエミッタ端子板７の間にエミッタ集電電極11, Mo接
触板５およびばね６からなる電流および熱の通路が構成
される。この構造では、Mo接触板５とエミッタ集電電極
11との間に加圧接触が生ずるが、Mo板５を例えばアルミ
ニウム (Al) からなる電極11に融着させてもよい。その
場合もばね６はチップ１とMo接触板５あるいはMo支持板
２との接続の信頼性を高めるのに役立つ。なお、図示し
ないがゲート電極は容器外面に出るゲート端子とAl導線
のボンディングで接続される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention in an IGBT module will be described below with reference to the drawings. The embodiment shown in FIG. 1 has a structure in which a member serving as a heat radiator serves as a current path at the same time. As shown in the plan view of FIG. 2, an emitter collector electrode 11 is provided on the upper surface of the IGBT chip 1 made of silicon (Si), avoiding the upper part of the gate structure, and a collector electrode 12 is provided on the lower surface. ing. An end face 13 is formed on the periphery of the chip 1 for ensuring a withstand voltage. The collector electrode 12 is made of molybdenum (M
o) brazed or fused to the support plate 2 made of The Mo plate 2 is screwed through the intermediate plate 20 to the collector terminal plate 3 made of copper, one surface of which is exposed to the outer surface of the container.
Attached by 41. However, brazing may be used instead of screwing. On the other hand, the Mo contact plate 5 is also in contact with the upper surface of the emitter collecting electrode 11. A ring-shaped spring 6 is interposed between the Mo contact plate 5 and the emitter terminal plate 7 exposed on the outer surface of the container. This spring is made of spring steel having a thickness of about 2 mm, has good electric and thermal conductivity, and is fixed to the Mo plate 5 and the terminal plate 7 by screws 42. Therefore, between the chip 1 and the emitter terminal plate 7, a current and heat path composed of the emitter collecting electrode 11, the Mo contact plate 5 and the spring 6 is formed. In this structure, the Mo contact plate 5 and the emitter collector electrode
The Mo plate 5 may be fused to the electrode 11 made of, for example, aluminum (Al). Also in this case, the spring 6 helps to improve the reliability of the connection between the chip 1 and the Mo contact plate 5 or the Mo support plate 2. Although not shown, the gate electrode is connected to the gate terminal exposed on the outer surface of the container by bonding an Al conductor.
【０００８】図３は放熱の役割をする部材と電流通路と
なる部材とが別になる構造で、図１と共通の部分には同
一の符号が付されている。この場合はMo接触板５の上に
厚さ１mm程度のCu板８をはさんで絶縁体であるが熱伝導
率の高いAl2 Ｏ3 ( アルミナ)の板９がねじ43により結
合されており、そのAl2 Ｏ3 板９とエミッタ端子板７の
間に熱伝導性のよい銀 (Ag) からなるばね61が２段に挿
入されている。Cu板８は図示しない部分で折り曲げて端
子板７とねじ止めあるいはろう付けで接続されている。
これにより、チップ１とエミッタ端子板７との間にエミ
ッタ集電電極11, Mo接触板５, Cu板８, Al2 Ｏ3 板９お
よび銀ばね61からなる熱放散の通路とMo接触板５および
Cu板８からなる電流の通路が構成される。なお、容器の
高さを減らすため、Al2 Ｏ3 板の一部およびばね61は端
子板７の凹部71に収容されているが、熱の一部はAl2 Ｏ
3 板９の側面からその凹部71の内面にも空隙を介して伝
搬する。FIG. 3 shows a structure in which a member serving as a heat radiator and a member serving as a current path are separated from each other, and portions common to those in FIG. 1 are denoted by the same reference numerals. In this case, an Al 2 O 3 (alumina) plate 9, which is an insulator but has a high thermal conductivity, is bonded to the Mo contact plate 5 by a screw 43 with a Cu plate 8 having a thickness of about 1 mm interposed therebetween. A spring 61 made of silver (Ag) having good thermal conductivity is inserted between the Al 2 O 3 plate 9 and the emitter terminal plate 7 in two stages. The Cu plate 8 is bent at a portion not shown and connected to the terminal plate 7 by screwing or brazing.
As a result, between the chip 1 and the emitter terminal plate 7, the heat dissipating passage composed of the emitter collector electrode 11, the Mo contact plate 5, the Cu plate 8, the Al 2 O 3 plate 9 and the silver spring 61, and the Mo contact plate 5 and
A current path composed of the Cu plate 8 is formed. Incidentally, in order to reduce the height of the container, although Al 2 O 3 part of the plate and the spring 61 is accommodated in the recess 71 of the terminal plate 7, a part of the heat is Al 2 O
The light propagates from the side surface of the three plate 9 to the inner surface of the concave portion 71 through the gap.
【０００９】図１, 図３に示したようにモジュールの両
面冷却を可能にするため、体積が従来の約1/2 と小さく
なったＩＧＢＴモジュールを造ることができる。さら
に、モジュールの内部空間に、例えばアルミナ入りのゲ
ル樹脂のような熱伝導性の高いゲルを充填すれば、さら
にエミッタ端子７の側への熱放散がよくなる。図４は図
１, 図３のようなＩＧＢＴモジュールの外観を示し、絶
縁性の側壁10に囲まれた容器の上面にエミッタ端子板７
が露出し、側面にゲート端子13が突出している。エミッ
タ端子板７には冷却体取付穴72が明けられている。As shown in FIG. 1 and FIG. 3, an IGBT module whose volume is reduced to about 1/2 of that of the conventional IGBT module can be manufactured in order to enable cooling of both sides of the module. Furthermore, if the interior space of the module is filled with a gel having high thermal conductivity such as a gel resin containing alumina, the heat dissipation to the emitter terminal 7 side is further improved. FIG. 4 shows the appearance of the IGBT module as shown in FIGS. 1 and 3, in which an emitter terminal plate 7 is provided on the upper surface of a container surrounded by insulating side walls 10.
Are exposed, and the gate terminal 13 protrudes from the side surface. The emitter terminal plate 7 has a cooling body mounting hole 72 formed therein.
【００１０】図５に示した実施例では、ＩＧＢＴモジュ
ール容器が絶縁体からなる側壁31と良導体からなる蓋板
32、底板33から構成され、その容器内の空間34にフロロ
カーボンを充填した構造である。そして、容器底板33の
上にそれぞれ１個のＩＧＢＴチップが封入された個別容
器30が固定されている。図６は個別容器30の内部を示
し、ＩＧＢＴチップ１は容器下面のコレクタ端子板３に
コレクタ電極によって固着され、エミッタ電極11の上に
MoもしくはCuなどからなる接触板51が接合されている。
この接触板51は絶縁材料からなる容器外壁35を貫通して
突出している。個別容器内部の空間36にもゲルを充填し
てもよい。そして、接触板51の頂面に図５に示すように
帯状接続導体81がろう付けされ、容器蓋板32から外部端
子へ引き出されている。したがってＩＧＢＴチップ１と
接続導体81の間に、エミッタ集電電極11、接触板51から
なる電流および熱の通路が構成される。このようにして
伝えられた熱は、まず接触板51と空間34のフロロカーボ
ン間で行われる熱交換、続いて沸騰、凝縮するフロロカ
ーボンと容器蓋板32との間で行われる熱交換によって放
熱される。なお、ここでは図示しないがＩＧＢＴチップ
１のゲート電極は容器外面に出るゲート端子とAl導線の
ボンディングで接続される。In the embodiment shown in FIG. 5, an IGBT module container has a side wall 31 made of an insulator and a lid plate made of a good conductor.
32, a bottom plate 33, and a structure in which a space 34 in the container is filled with fluorocarbon. The individual containers 30 each having one IGBT chip sealed therein are fixed on the container bottom plate 33. FIG. 6 shows the interior of the individual container 30. The IGBT chip 1 is fixed to the collector terminal plate 3 on the lower surface of the container by a collector electrode, and
A contact plate 51 made of Mo, Cu, or the like is joined.
The contact plate 51 projects through the container outer wall 35 made of an insulating material. The space 36 inside the individual container may be filled with the gel. Then, as shown in FIG. 5, a band-like connecting conductor 81 is brazed to the top surface of the contact plate 51, and is drawn out from the container cover plate 32 to an external terminal. Therefore, between the IGBT chip 1 and the connection conductor 81, a current and heat path composed of the emitter collector electrode 11 and the contact plate 51 is formed. The heat transferred in this manner is first radiated by the heat exchange performed between the contact plate 51 and the fluorocarbon in the space 34, and subsequently by the heat exchange performed between the boiling and condensing fluorocarbon and the container lid plate 32. . Although not shown here, the gate electrode of the IGBT chip 1 is connected to a gate terminal exposed on the outer surface of the container by bonding an Al conductor.
【００１１】図７に示す実施例は、ＩＧＢＴモジュール
容器からの放熱をヒートパイプを用いて行う構造であ
る。この場合は、各個別容器30から突出したエミッタ接
触板51が容器蓋板32とろう付けあるいは加圧接触で接続
され、熱は効率良くヒートパイプ37に伝わるようになっ
ている。図８は上記のようなＩＧＢＴモジュールを３相
インバータスタックとして構成した構造を示す。６個の
ＩＧＢＴモジュール21は二つの冷却体22の間に三つの中
間冷却体23を介して２個ずつはさまれている。各冷却体
22, 23にはヒートパイプを挿入するため、あるいは冷却
水を通すための穴24が明けられている。このように低イ
ンダクタンスモジュールが両面の端子板に電気的接続体
を兼ねる冷却体が接触するように組立てられているた
め、インバータスタック全体としても低インダクタンス
でかつコンパクトになる。なお、以上の実施例はＩＧＢ
Ｔモジュールについて述べたが、他の半導体素子を複数
個収容するモジュールにおいても同様に実施できること
はいうまでもない。The embodiment shown in FIG. 7 has a structure in which heat is radiated from an IGBT module container using a heat pipe. In this case, the emitter contact plate 51 projecting from each individual container 30 is connected to the container cover plate 32 by brazing or pressurizing contact, so that heat is efficiently transmitted to the heat pipe 37. FIG. 8 shows a structure in which the IGBT module as described above is configured as a three-phase inverter stack. Each of the six IGBT modules 21 is sandwiched between two cooling bodies 22 via three intermediate cooling bodies 23. Each cooling body
Holes 24 for inserting a heat pipe or passing cooling water are formed in 22, 23. As described above, since the low inductance module is assembled such that the cooling body also serving as an electrical connection body comes into contact with the terminal boards on both sides, the whole inverter stack is low in inductance and compact. In the above embodiment, the IGB
Although the T module has been described, it goes without saying that the present invention can be similarly applied to a module containing a plurality of other semiconductor elements.
【００１２】[0012]
【発明の効果】本発明によれば、複数の半導体素体を一
つの容器に収容する半導体装置の一つの容器内に容器外
部に一面が露出する一つの端子体と、一面に主電極およ
び絶縁ゲート電極を有する複数個のＩＧＢＴ素体が収容
され、各素体の前記主電極が被加圧面を有し、該被加圧
面に接触するその熱膨脹係数が半導体材料の熱膨脹係数
に近似した金属よりなる接触体を有し、前記主電極が前
記接触体を介して前記端子体に電気的に接続され、前記
接触体と容器外部に一面が露出する一つの端子体との間
にそれぞれ存在する電気良導性のばね体により前記電極
に対して加圧されることにより、従来の導線のボンディ
ングで電気的な接続を行っていた半導体装置と異なり、
基体の両面からの熱放散が可能となり、従来の約１／３
の小さな体積で大きな電流容量をもたせることが可能に
なった。また容器内の接続に導線を用いないため、内部
のインダクタンスが低くなり、周波数の高い領域でも使
用が可能になった。According to the present invention, one terminal body having one surface exposed to the outside of the container is provided in one container of a semiconductor device accommodating a plurality of semiconductor elements in one container, and the main electrode and the insulating member are provided on one surface. A plurality of IGBT bodies each having a gate electrode are accommodated, and the main electrode of each body has a surface to be pressed, and a coefficient of thermal expansion in contact with the surface to be pressed is closer to that of a semiconductor material than metal. has made contact body, said main electrode is electrically connected to the terminal body through the contacting bodies, the
Between the contact body and one terminal body with one surface exposed to the outside of the container
The electrode is provided by an electrically conductive spring body existing in
By being pressurized , unlike a semiconductor device that has been electrically connected by conventional wire bonding,
Heat can be dissipated from both sides of the substrate, which is about 1/3
It is possible to have a large current capacity with a small volume. In addition, since a conductor is not used for connection in the container, the internal inductance is reduced, and the device can be used even in a high frequency region.
【図１】本発明の一実施例のＩＧＢＴモジュールの一部
断面図FIG. 1 is a partial cross-sectional view of an IGBT module according to one embodiment of the present invention.
【図２】ＩＧＢＴチップの平面図FIG. 2 is a plan view of an IGBT chip.
【図３】本発明の異なる実施例のＩＧＢＴモジュールの
一部断面図FIG. 3 is a partial cross-sectional view of an IGBT module according to another embodiment of the present invention.
【図４】本発明の実施例のＩＧＢＴモジュールの外観斜
視図FIG. 4 is an external perspective view of an IGBT module according to an embodiment of the present invention.
【図５】本発明の別の実施例のＩＧＢＴモジュールの断
面図FIG. 5 is a sectional view of an IGBT module according to another embodiment of the present invention.
【図６】図５に用いられるＩＧＢＴ個別容器の断面図FIG. 6 is a sectional view of an individual IGBT container used in FIG. 5;
【図７】本発明のさらに別の実施例のＩＧＢＴモジュー
ルの断面図FIG. 7 is a sectional view of an IGBT module according to still another embodiment of the present invention.
【図８】本発明の実施例のＩＧＢＴモジュールを用いた
インバータスタックの側面図FIG. 8 is a side view of an inverter stack using the IGBT module according to the embodiment of the present invention.
１ ＩＧＢＴチップ １１ エミッタ集電電極 １２ コレクタ電極 ２ Mo支持板 ３ コレクタ端子板 ５ Mo接触板 ５１ 接触板 ６ ばね ６１ 銀ばね ７ エミッタ端子板 ８ 銅板 ８１ 接続導体 ９ Al2 Ｏ3 板 １０ 容器外壁 ３０ 個別容器 ３１ 容器側壁 ３２ 容器蓋板 ３３ 容器底板 ３５ 容器外壁DESCRIPTION OF SYMBOLS 1 IGBT chip 11 Emitter collector electrode 12 Collector electrode 2 Mo support plate 3 Collector terminal plate 5 Mo contact plate 51 Contact plate 6 Spring 61 Silver spring 7 Emitter terminal plate 8 Copper plate 81 Connection conductor 9 Al 2 O 3 plate 10 Container outer wall 30 Individual container 31 Container side wall 32 Container lid plate 33 Container bottom plate 35 Container outer wall
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 23/48 H01L 23/34 ──────────────────────────────────────────────────続 き Continuation of front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 23/48 H01L 23/34
Claims (4)
一つの端子体と、一面に主電極および絶縁ゲート電極を
有する複数個のＩＧＢＴ素体が収容され、各素体の前記
主電極が絶縁ゲート構造直上を避けた領域上に被加圧面
を有し、該被加圧面に接触するその熱膨脹係数が半導体
材料の熱膨脹係数に近似した金属よりなる接触体を有
し、前記主電極が前記接触体を介して前記端子体に電気
的に接続されることを特徴とする半導体装置。1. A single container contains one terminal body whose one surface is exposed to the outside of the container, and a plurality of IGBT elements each having a main electrode and an insulated gate electrode on one surface, and the main electrode of each element body is provided. Has a surface to be pressed on a region other than immediately above the insulated gate structure, and has a contact body made of metal whose thermal expansion coefficient in contact with the surface to be pressed is similar to the thermal expansion coefficient of the semiconductor material. A semiconductor device electrically connected to the terminal body via the contact body.
一つの端子体と、一面に主電極および絶縁ゲート電極を
有する複数個のＩＧＢＴ素体が収容され、各素体の前記
主電極が被加圧面を有し、該被加圧面に接触するその熱
膨脹係数が半導体材料の熱膨脹係数に近似した金属より
なる接触体を有し、前記主電極が前記接触体を介して前
記端子体に電気的に接続され、前記接触体と容器外部に
一面が露出する一つの端子体との間にそれぞれ存在する
電気良導性のばね体により前記電極に対して加圧される
ことを特徴とする半導体装置。2. One surface is exposed outside the container in one container.
One terminal body, main electrode and insulated gate electrode on one surface
Having a plurality of IGBT element bodies,
The main electrode has a surface to be pressurized, and its heat contacting the surface to be pressurized
Metals whose expansion coefficient is close to the thermal expansion coefficient of semiconductor materials
The main electrode is located forward through the contact body.
The electrode is pressurized by an electrically conductive spring body that is electrically connected to the terminal body and exists between the contact body and one terminal body having one surface exposed to the outside of the container. A semiconductor device characterized by the above-mentioned.
つの端子体との間にそれぞれ存在する電気良導性のばね
体により前記電極に対して加圧されることを特徴とする
請求項１に記載の半導体装置。3. The electrode is pressurized by an electrically conductive spring body present between the contact body and one terminal body whose one surface is exposed to the outside of the container. Item 2. The semiconductor device according to item 1.
され、各素体の一面の電極に、その熱膨脹係数が半導体
素体の熱膨脹係数と近似している金属よりなり、導電板
を介して熱良導性の加圧体と結合された接触体が接触
し、その加圧体と容器外部に一面が露出する一つの端子
体との間にそれぞれ存在する熱良導性のばね体により前
記電極に対して加圧され、前記導電板は各素体に共通で
前記端子体に電気的に接続されたことを特徴とする半導
体装置。4. A conductive plate in which a plurality of semiconductor elements are accommodated in one container, and an electrode on one surface of each element is made of a metal whose coefficient of thermal expansion is similar to the coefficient of thermal expansion of the semiconductor element. The contact body, which is connected to the pressurizing body having good thermal conductivity through the contact, comes into contact with each other, and the springs having good thermal conductivity exist between the pressurizing body and one terminal body whose one surface is exposed to the outside of the container. A semiconductor device, wherein a pressure is applied to the electrode by a body, and the conductive plate is electrically connected to the terminal body in common with each body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22054292A JP2993286B2 (en) | 1991-09-13 | 1992-08-20 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3-233503 | 1991-09-13 | ||
| JP23350391 | 1991-09-13 | ||
| JP22054292A JP2993286B2 (en) | 1991-09-13 | 1992-08-20 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05211259A JPH05211259A (en) | 1993-08-20 |
| JP2993286B2 true JP2993286B2 (en) | 1999-12-20 |
Family
ID=26523769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22054292A Expired - Fee Related JP2993286B2 (en) | 1991-09-13 | 1992-08-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2993286B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2800605B2 (en) * | 1992-12-03 | 1998-09-21 | 日本電気株式会社 | Semiconductor device |
| JP4085639B2 (en) * | 2002-01-28 | 2008-05-14 | 富士電機デバイステクノロジー株式会社 | Semiconductor device and manufacturing method thereof |
| JP5253430B2 (en) * | 2009-03-23 | 2013-07-31 | 株式会社豊田中央研究所 | Power module |
| CN104282636A (en) * | 2014-10-17 | 2015-01-14 | 国家电网公司 | Compression-joint type IGBT packaging structure with heat tubes |
| CN108122897B (en) * | 2016-11-30 | 2019-11-29 | 株洲中车时代电气股份有限公司 | A kind of IGBT module |
| CN116666310B (en) * | 2023-08-02 | 2023-10-27 | 烟台台芯电子科技有限公司 | IGBT packaging structure |
-
1992
- 1992-08-20 JP JP22054292A patent/JP2993286B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| 特開 昭４９−１１５６１５ＪＰ，Ａ） |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05211259A (en) | 1993-08-20 |
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