TW460430B - Low-fire, low-dielectric-constant and low-loss ceramic compositions - Google Patents
Low-fire, low-dielectric-constant and low-loss ceramic compositions Download PDFInfo
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五、發明說明(1) 【發明領域】 ’特別是針對應用 ’此陶瓷成分可以 電知失的特性。 本發明乃與介電陶瓷材料成分相關 於積層陶瓷基板或元件所需的陶瓷材料 在低溫緻密,並擁有低介電係數與低介 【發明背景】 隨著電子系統輕薄短小化之發展, 體電路(VLSI)朝向高集積密度,高速度了】:=積 度,高可靠度等特性。 哥邈速车,南線路密 在電性方面,為了提高訊號傳遞速率, 過程中減弱’構裝中導體材料最好選用高導電、生: 屬,如.銀、銀-鈀合金、金、銅等;而 ^ ^ ^ ^ ^ & ^ 〇〇〇:c 此外,由於訊號延遲(td)與基板材料 (k )有T列關係: 丨电*数V. Description of the invention (1) [Field of the invention] 'Especially for application' The characteristic that this ceramic component can be electrically lost. The invention relates to the composition of the dielectric ceramic material and the ceramic material required for the laminated ceramic substrate or component is dense at low temperature and has a low dielectric constant and a low dielectric. [Background of the Invention] With the development of thinner and shorter electronic systems, the body circuit (VLSI) towards a high accumulation density and high speed]: = Integrity, high reliability and other characteristics. Brother speed train, the south line is closely related to electrical properties. In order to improve the signal transmission rate, the conductor material in the construction is weakened. It is best to use high conductivity and health: genus, such as silver, silver-palladium alloy, gold, copper ^ ^ ^ ^ ^ &Amp; ^ 〇〇〇: c In addition, because the signal delay (td) and the substrate material (k) have a T column relationship: 丨 electricity * number
td = k1/2 L / C C為光速,L為線路長度.所以降低基板材料的介電常 數,即可減少訊號延遲的時間。同時,降低基板材料的介 電損失(tan (5 ),可避免訊號間的相互干擾,進 ;1 基板上的線路密度。 在可靠度方面’隨著晶片的大小不斷增加,且有8〇% 左右的晶片是以表面黏著技術(surface mount technology ’ SMT )將晶片與基板材料直接結和在—起; 為了減小因兩者熱膨脹差而產生之熱應力,造成基板與晶td = k1 / 2 L / C C is the speed of light and L is the length of the line. Therefore, reducing the dielectric constant of the substrate material can reduce the signal delay time. At the same time, the dielectric loss (tan (5)) of the substrate material can be reduced to prevent mutual interference between signals, and the density of the lines on the substrate. In terms of reliability, 'with the size of the wafer, it has increased by 80%. The left and right chips use surface mount technology (SMT) to directly bond the chip and the substrate material together; in order to reduce the thermal stress caused by the difference in thermal expansion between the two, the substrate and the crystal
C:\Program Files\Patent\0582-4179-E.ptd第 5 頁 4 60430C: \ Program Files \ Patent \ 0582-4179-E.ptd page 5 4 60430
五、發明說明(2) 片發生龜裂或剝離,基板材 片接近,以提高系統的可靠 與高速運作之結果,會產& 而損壞基板上之電子元件, 力,即較高的熱傳導率。此 料必須具備的條件。 所以,在選擇陶瓷構裝 需具有低介電係數,低介電 合,及燒結溫度在1 0 0 0 以 金、金、銅等金屬導體同時 適當的機械強度。 料的熱膨脹係數必須盡量與晶 度。而電子元件由於高集機化 大量的熱量,為了防止因過熱 基板材料需具有良好的散熱能 外良好的機械性能也是基板材 基板材料時,需考慮材料組成 損失’熱膨脹係數可與矽配 下’並且能夠和銀、銀-鈀合 燒結緻密,並有高熱傳導率與 另外低η電常數的介電材料,也能使用在3 0 0MHZ以上 ^微波(GHz)範圍的元件,因為介電材料的共振頻率皆很 商’因此是適當的高頻材料。 本發明即針對上述發展趨勢提出,目的是要發展低 溫、低介電係數及低介電損失的介電陶究成分,其燒結所 需的溫度在800-1 00(TC間,並可在1〇_6〇分鐘内完成緻密 化,如此將可與傳統厚膜製程相容並使用其既有之設備。 【先前技術】 的低介電陶瓷成分 氧化石夕與20-60wt% 在美國專利4 6 4 21 4 8號公報内提到 含有10-75wt%氧化鋁、5-70wt%非結晶 矽硼酸玻璃,此介電系統擁有4, 8-9, 6的介電係數 在美國專利4672152號公報所示的低介電陶曼成分含 有5 0-95wt%結晶玻璃與5-50wU陶瓷材料,此介電系統擁V. Description of the invention (2) The chip is cracked or peeled off, and the base sheet is close to improve the reliability and high-speed operation of the system. As a result, the electronic components on the substrate will be damaged, which means higher thermal conductivity. . The conditions that this material must have. Therefore, when choosing a ceramic structure, it is necessary to have a low dielectric constant, a low dielectric constant, and a sintering temperature of 1000 to metal conductors such as gold, gold, copper and the like, and appropriate mechanical strength. The thermal expansion coefficient of the material must be as close as possible to the crystallinity. Because electronic components have a large amount of heat, in order to prevent the substrate material from overheating, it must have good heat dissipation. In addition to good mechanical properties, it is also necessary to consider the material composition loss when the thermal expansion coefficient can be matched with silicon. Dielectric materials that can be densely sintered with silver and silver-palladium, have high thermal conductivity and a low η dielectric constant, and can also use components above 300 MHz and microwave (GHz) range because of the resonance of the dielectric material The frequencies are very quotient 'and are therefore suitable high frequency materials. The present invention is made in response to the above-mentioned development trend, and the purpose is to develop a low-temperature, low-dielectric-constant, and low-dielectric-loss dielectric ceramic composition. The temperature required for sintering is between 800-1 00 (TC, and can be between 1 The compaction is completed in 〇_60 minutes, so that it will be compatible with traditional thick film processes and use its existing equipment. [Previous technology] Low-dielectric ceramic composition oxide stone eve and 20-60wt% in US patent 4 No. 6 4 21 4 8 mentions that it contains 10-75wt% alumina and 5-70wt% amorphous borosilicate glass. This dielectric system has a dielectric constant of 4, 8-9, 6 in US Patent No. 4,672,152. The low-dielectric Taurman composition shown contains 50-95wt% crystallized glass and 5-50wU ceramic material. This dielectric system has
C:\ProgramFiles\Patent\0582-4179-E. ptd第 6 頁 460430 發明說明(3) 有5.1-6.0的介電儀數。έ士C: \ ProgramFiles \ Patent \ 0582-4179-E. Ptd page 6 460430 Description of the invention (3) There are 5.1-6.0 dielectric meter numbers. Deshi
Rn w s π A 叩日日破螭成分為5-20wt%氧化鋰、 60-9〇Wt%氧切、卜歸%氧化叙與卜㈣除氧化鐘外的 鹼金族氧化物。陶竟材料則包括氧化紹與氧化秒。 在美國專利3926648號公報所示的低介電陶瓷成分僅 含有可結晶玻璃’ &玻璃在燒結中形成堇青石結晶相並擁 有5 2的介電係數與1 — 2 x 1 0—61的線熱膨脹係數。 在美國專利4755490號公報所示的低介電陶瓷成分含 有U-50wt%氧化銘、0_30wt%非結晶氧化矽及5〇_6〇wt%玻 璃。玻璃成分則含有4wt%氧化鈣、12wt%氧化鎂、29wt% 化硼與42wt%氧化矽。燒結溫度低於1〇〇〇t,介電係數在 4. 5-6. 1間’線熱膨脹係數則在3· 9 4, 2 χ 1〇—丨間。 在^國專利4788046號公報所示的低介電陶瓷成分中 含有石英與玻璃。為提升介電系統的緻密性,先將石英粉 末鍍上一層玻璃,然後再與玻璃粉末混合。此介電材料擁 有4.5的介電係數與大於5·5 XI 〇-6 κ-1的線熱膨脹係數。 在美國專利4879261號公報所示的低介電陶瓷成分中 含有70-85wt%氧化矽與15-3〇^%硼鋅玻璃,此系統的燒結 溫度低於1065 °C並擁有介電係數在5-5. 5間。 ° 【發明目的】 由以上先前技術得知,工業界急需具有低溫燒結與低 介電係數之介電陶瓷材料。 ' _ 有鑑於此,本發明的主要目的即提供—種低溫繞結的 介電陶瓷成分’其擁有低於1〇的介電係數及低介電損失。 本發明的另一目的在提供一介電基板或元件的成分,Rn w s π A The next day's breakage composition is 5-20wt% lithium oxide, 60-9〇Wt% oxygen cutting, reducing% oxidation, and other basic gold group oxides except oxide. Pottery materials include oxide oxide and oxidation second. The low-dielectric ceramic composition shown in U.S. Patent No. 3926648 contains only crystallizable glass' & glass forms a cordierite crystal phase during sintering and has a dielectric constant of 5 2 and a line of 1-2 x 1 0-61 Thermal expansion coefficient. The low-dielectric ceramic composition shown in U.S. Patent No. 4,755,490 contains U-50 wt% oxide, 0-30 wt% amorphous silicon oxide, and 50-60 wt% glass. The glass composition contains 4wt% calcium oxide, 12wt% magnesium oxide, 29wt% boron oxide, and 42wt% silicon oxide. The sintering temperature is lower than 1000t, and the dielectric coefficient is between 4.5 and 6.1. The linear thermal expansion coefficient is between 3.94, 2 x 10 and 丨. The low-dielectric ceramic composition shown in Japanese Patent No. 4788046 contains quartz and glass. To increase the density of the dielectric system, the quartz powder is first coated with glass and then mixed with the glass powder. This dielectric material has a dielectric coefficient of 4.5 and a linear thermal expansion coefficient greater than 5 · 5 XI 0-6 κ-1. The low-dielectric ceramic composition shown in U.S. Patent No. 4,878,261 contains 70-85 wt% silicon oxide and 15-3 0 ^% borozinc glass. The sintering temperature of this system is lower than 1065 ° C and the dielectric constant is 5 -5. 5 rooms. ° [Objective of the Invention] It is known from the foregoing prior art that the industrial community urgently needs a dielectric ceramic material having a low temperature sintering and a low dielectric constant. In view of this, the main object of the present invention is to provide a low-temperature-wound dielectric ceramic composition 'which has a dielectric constant lower than 10 and a low dielectric loss. Another object of the present invention is to provide a composition of a dielectric substrate or element,
C:\Prograni Files\Patent\0582-4179-E, ptd第 7 頁 " " . 460430 五、發明說明(4) 可在低溫與短時間内燒結,例如80 0_100〇 °C、10-60分鐘 内達到95%以上的緻密化。 本發明的再一目的就是提供—種陶瓷成品的製造方 法’其特徵在於利用上述陶瓷成分製作成陶瓷成品,所得 之陶瓷成品擁有低於1 0的介電係數及低介電損失。 【發明之詳細敘述】 本發明的主要特點在依不同比例混合二陶瓷材料包括 低溫玻璃與高溫陶瓷相,經低溫燒結(8 〇 0〜1 0 〇 〇 X:)製輕’ 該陶瓷混合物可以在1 5 ~ 6 0分鐘達到9 5 %以上的緻密化,一 陶瓷材料的比例並無特別限制,主要視所需成品的性質而 調整。 "低溫玻璃”在本發明裏被定義為非晶玻璃如鈣鉛鋅蝴 矽酸玻璃,其玻璃軟化點在600〜800 °C間,其主要成分為— 40〜55wt%氧化矽、5〜15wt%氧化鋁、20~30wt%氧化舞、 2~8wt%氧化硼、2~8wt%氡化鉛及2〜8wt%氧化鋅。 "咼溫陶瓷相M在本發明裏被定義為高熔點或高軟化點 之結晶或非結晶氧化物如氡化紹或氧化€夕等。其他氧化物 包含鈣長石、莫莱石、堇青石、氧化鈣、以及鎂撖欖石亦 適用於本發明者。 根據本發明之介電陶瓷成分,其中鈣鉛鋅硼石夕酸玻璃 約佔3 0〜9 0 v ο 1 %,氧化物約佔7 0〜1 〇 v 〇 1 % ;其中較佳者,鈣 鉛鋅蝴梦酸玻璃約佔5 0 ~ 7 0 v ο 1 %,氧化物約佔5 〇〜3 〇 vo 1 % 〇 本發明主要應用積層陶瓷基板與元件,因此上述的陶C: \ Prograni Files \ Patent \ 0582-4179-E, ptd page 7 " ". 460430 V. Description of the invention (4) Can be sintered at low temperature and short time, such as 80 0_100〇 ° C, 10-60 More than 95% densification is achieved in minutes. Another object of the present invention is to provide a method for manufacturing a ceramic finished product, which is characterized in that a ceramic finished product is manufactured by using the ceramic component described above, and the obtained ceramic finished product has a dielectric constant lower than 10 and a low dielectric loss. [Detailed description of the invention] The main feature of the present invention is to mix two ceramic materials including low-temperature glass and high-temperature ceramic phases in different proportions, and then lightly sintered at low temperature (800 ~ 100 00X :). The ceramic mixture can be used in The densification of more than 95% can be achieved in 15 to 60 minutes. The proportion of a ceramic material is not particularly limited, and it is mainly adjusted according to the properties of the desired finished product. " Low temperature glass "is defined in the present invention as an amorphous glass such as calcium lead zinc butterfly silica glass, whose glass softening point is between 600 ~ 800 ° C, and its main component is -40 ~ 55wt% silicon oxide, 5 ~ 15wt% alumina, 20 ~ 30wt% oxidation dance, 2 ~ 8wt% boron oxide, 2 ~ 8wt% lead hafnium, and 2 ~ 8wt% zinc oxide. &Quot; Thermal ceramic phase M is defined as a high melting point in the present invention. Or crystalline or non-crystalline oxides with high softening point, such as osmium sulfide or oxidized oxide, etc. Other oxides including anorthite, mullite, cordierite, calcium oxide, and magnesite are also suitable for the inventors. According to the composition of the dielectric ceramic of the present invention, calcium lead-zinc-borosilicate glass accounts for about 30 to 90 v ο 1%, and oxides accounts for about 70 to 100 〇1%; the better of which is calcium Lead-zinc butterfly acid glass accounts for about 50 ~ 70 v ο 1%, and oxide accounts for about 50 ~ 3 0vo 1% 〇 The present invention is mainly applied to laminated ceramic substrates and components, so the above ceramics
C:\PrograraFiles\Patent\0582-4179-E.ptd第 8 芦 460430 五、發明說明(5) 瓷材料混合物必須與有機溶劑如甲笨與乙醇,有機黏結劑 如聚乙烯丁醛(Polyvinyl butyral ;PVB),以及塑化劑如 笨二甲酸二丁酯(Dibutyl Phthalate ; DBP)混合形成聚 料’經刮刀成形產製生胚薄片,然後經網印導體膏如銀或 金、疊壓、共燒製成成品。 本發明之積層陶瓷元件的製造方法包括下列步驟: (a)將70-85wt%之陶瓷成分與30-15wt%有機載體混合形成 供刮刀成形製程所需的漿料;其中,上述陶瓷成分包括·· 30-9 0vol%鈣鉛鋅硼矽酸玻璃與70-10vol%氧化物;(b) 以一刮刀成形製程,將上述漿料製成一生胚薄片;(c)在 該生胚薄片上網印出導體線路;(d)將網印有導體線路之 生胚薄片,經疊壓製成一積層陶瓷生胚;以及(e)將積層 陶瓷生胚在空氣氣氛中經脫脂與共燒,完成緻密化。 為讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂,下文特舉一較佳實施例,作詳細說明如下: 【實施例一】 量取鈣鉛鋅硼矽酸玻璃粉末625g,加入已裝有500〇g 氧化鋁磨球,及775c.c.異丙醇(2-propyl alcohol)的5 公升氧化鋁球磨罐中球磨,球磨完的槳液過3 2 5 raesh篩網 後,放入烘箱,在8 0 °C烘乾1 6小時,再以研缽與杵研磨, 所得的粉末的粒徑大小(D5D)為1〜5 " m,經XRD (R i gaku D/ Max I IB)判定粉末為非晶質相。選商用氧化鋁陶瓷粉末其 粒徑大小(D5。)為0. 6〜5. 0 # m。 在此實施例中’按50vol%約船辞蝴碎酸玻璃與50vol%C: \ PrograraFiles \ Patent \ 0582-4179-E.ptd No. 8 Lu 460430 V. Description of the invention (5) Porcelain materials must be mixed with organic solvents such as methylbenzene and ethanol, and organic binders such as polyvinyl butyral (Polyvinyl butyral; PVB), and plasticizers such as Dibutyl Phthalate (DBP) are mixed to form a polymer material, which is formed by a doctor blade to produce green embryo flakes, and then screen printed conductor paste such as silver or gold, laminated, co-fired Finished. The manufacturing method of the laminated ceramic element of the present invention includes the following steps: (a) mixing 70-85 wt% of the ceramic component with 30-15 wt% of the organic carrier to form a slurry required for a doctor blade forming process; wherein the above-mentioned ceramic component includes · · 30-9 0vol% calcium-lead-zinc-borosilicate glass and 70-10vol% oxide; (b) using a doctor blade forming process, the above slurry is made into a green embryo sheet; (c) the green embryo sheet is printed online Out of the conductor circuit; (d) the green embryo sheet with the conductor circuit printed on the screen is laminated to form a laminated ceramic green embryo; and (e) the laminated ceramic green embryo is degreased and co-fired in an air atmosphere to complete densification. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is hereinafter described in detail as follows: [Example 1] Weigh 625g of calcium lead zinc borosilicate glass powder After adding 500 gram alumina grinding balls and 775c.c. isopropyl alcohol (2-propyl alcohol) in a 5 liter alumina ball mill tank, add the ball mill to a 3 2 5 raesh screen. , Placed in an oven, dried at 80 ° C for 16 hours, and then ground with a mortar and pestle. The particle size (D5D) of the obtained powder was 1 to 5 " m, and was measured by XRD (R i gaku D / Max I IB) judged that the powder was an amorphous phase. 0 # m。 Selected commercial alumina ceramic powder with a particle size (D5.) Of 0. 6 ~ 5. 0 # m. In this embodiment, ‘recycled acid glass and 50 vol%
C:\Prograin Files\Patent\0582-4179_E.ptd第 9 頁 * 460430 五、發明說明(6) 乳化铭比例混合後再與5 w t %聚乙二醇(ρ ο 1 y e t h y 1 e n e giycol 200; PEG 200)及50wt%正丙醇混合,利用三度空 間懸臂混粉機混合2小時《均句混合的泥漿經乾燥、過篩 後得到乾燥粉末,再經1 300 0 psi將粉末乾壓得到高0. 3 公分、直徑L 3公分的生胚。將準備好的生胚分成三組, 分別在 850 °C(1A 〜1C)、875 °C(1D 〜IF)、900 °C(1G 〜II)燒 結1 5、3 0、6 0分鐘。燒結製程主要分成二階段。第一階段 為脫脂。生胚在5 °C/ min的加熱速度下,緩慢清除生胚内 的有機黏結劑’為確實完全清除,溫度在5〇〇 t停留一小 時。第二階段則以5 °C/min由500 X:加溫至850〜900 t,然 後再停留15~60分鐘進行敏密化。 利用阿基米德原理量得燒結體的密度,在此實施例中 得到的結果列於表一。三個不同燒結溫度與時間均得到相 對燒結密度低於9 5 % ’此結果亦由燒結體斷裂面的掃瞄式 電子顯微照片得到印證。X - r a y繞射分析發現燒結體内存 在氧化銘與舞斜長石(anorthite)結晶相。且隨著燒結溫 度、時間的增加’氧化鋁結晶相減少,鈣斜長石結晶相增 加’到875 °C燒結15分鐘達到飽和。 【實施例二】 本實施例除了陶瓷成分改為60 vo 1 %鈣鉛鋅硼發酸玻璃 與4 0vol%氧化鋁外,其餘製程與量測程序均與實施例一相 同。準備好的生胚仍分別在850 °C(2A〜2C)、875。(: (2D〜2F)、90 0 °C(2G〜21)燒結15、30、60分鐘。其燒結密 度結果亦列於表一中。三個不同燒結溫度與時間均得到相C: \ Prograin Files \ Patent \ 0582-4179_E.ptd page 9 * 460430 V. Description of the invention (6) Mix the emulsified product with 5 wt% polyethylene glycol (ρ ο 1 yethy 1 ene giycol 200; PEG 200) and 50% by weight of n-propanol, mixed with a three-dimensional space cantilever mixer for 2 hours, the uniformly mixed slurry was dried and sieved to obtain a dry powder, and the powder was then dried under a pressure of 1 300 0 psi to obtain a high 0. . 3 cm, green embryos with a diameter of 3 cm. The prepared raw embryos were divided into three groups and sintered at 850 ° C (1A to 1C), 875 ° C (1D to IF), and 900 ° C (1G to II) for 1, 5, 30, and 60 minutes. The sintering process is mainly divided into two stages. The first stage is degreasing. Under the heating speed of 5 ° C / min, the embryos were slowly removed from the embryos to completely remove them. The temperature stayed at 500 t for one hour. The second stage is from 500 X at 5 ° C / min: warm up to 850 ~ 900 t, and then stay for 15 ~ 60 minutes for densification. The density of the sintered body was measured using the Archimedes principle. The results obtained in this example are shown in Table 1. The relative sintering densities of less than 95% were obtained at three different sintering temperatures and times. This result is also confirmed by scanning electron micrographs of the fracture surface of the sintered body. X-r a y diffraction analysis revealed the presence of oxidized crystals and anorthite crystal phases in the sintered body. And as the sintering temperature and time increase, the alumina crystal phase decreases, and the anorthite crystal phase increases to 875 ° C for 15 minutes to reach saturation. [Example 2] In this example, except that the ceramic composition is changed to 60 vo 1% calcium lead zinc boron acid glass and 40 vol% alumina, the rest of the manufacturing process and measurement procedure are the same as those in the first embodiment. The prepared raw embryos were still at 850 ° C (2A ~ 2C) and 875, respectively. (: (2D ~ 2F), 90 0 ° C (2G ~ 21) sintered for 15, 30, 60 minutes. The sintered density results are also listed in Table 1. Three different sintering temperatures and times were obtained.
C:\ProgramFiles\Patent\0582-4179-E.ptd第 10 頁 4 6 0 4 3 0 五、發明說明(7) 對燒結密度低於95%,此結果亦由燒結體斷裂面的掃瞄式 電子顯微照片得到印證。X-ray繞射分析發現燒結體内存 在氧化鋁與鈣斜長石(anorthi te)結晶相。且隨著燒結溫 度、時間的增加,氧化鋁結晶相減少,鈣斜長石結晶相増 加’到8 7 5 °C燒結1 5分鐘達到飽和。 【實施例三】 本實施例除了陶瓷成分改為70 vo 1 %鈣鉛鋅硼矽酸坡墙 與3 0 v 〇 1 %氧化鋁外,其餘製程與量測程序均與實施例一相 同。準備好的生胚仍分別在850 °C(3A〜3C)、875 °C (3卜3F)、9 0 0 °C(3G〜31)燒結15、30、60分鐘。其燒結密 度結果與介電性質亦列於表一中。三個不同燒結溫度與時 間均得到相對燒結密度高於95%以上,此結果亦由燒結體 斷裂面的掃猫式電子顯微照片得到印證。X — j· a y繞射分析〜 發現燒結體内存在氧化Is與1¾斜長石(anorthite)結晶 相且隨著燒結溫度、時間的增加,氧化鋁結晶相減少, 鈣斜長石結晶相增加’到8 7 5 °C燒結1 5分鐘達到飽和。介 電係數在7· 95〜8. 19 (1 MHz)與介電損失在〇.〇7〜〇.1 8% (1MHz)。C: \ ProgramFiles \ Patent \ 0582-4179-E.ptd page 10 4 6 0 4 3 0 V. Description of the invention (7) The sintered density is less than 95%. This result is also the scanning type of the fracture surface of the sintered body. The electron micrograph was confirmed. X-ray diffraction analysis revealed the presence of alumina and anorthi te crystalline phases in the sintered body. And with the increase of sintering temperature and time, the crystal phase of alumina decreases, and the crystal phase of anorthite is increased to 875 ° C for 15 minutes to reach saturation. [Embodiment 3] In this embodiment, except that the ceramic composition is changed to 70 vo 1% calcium lead zinc borosilicate slope wall and 30 v 001% alumina, the rest of the manufacturing process and measurement procedure are the same as those in the first embodiment. The prepared raw embryos were still sintered at 850 ° C (3A ~ 3C), 875 ° C (3F 3F), and 900 ° C (3G ~ 31) for 15, 30, and 60 minutes, respectively. The sintered density results and dielectric properties are also shown in Table 1. The relative sintering densities were higher than 95% at three different sintering temperatures and times. This result was also confirmed by the scanning electron micrograph of the fracture surface of the sintered body. X — j · ay diffraction analysis ~ It was found that the oxidized Is and 1¾ anorthite crystal phases existed in the sintered body. As the sintering temperature and time increased, the alumina crystal phase decreased, and the anorthite crystal phase increased to 8 Sinter at 75 ° C for 15 minutes to reach saturation. The dielectric constant is in the range of 7.95 to 8.19 (1 MHz) and the dielectric loss is in the range of 0.07 to 0.18% (1 MHz).
C:\Program Files\Patent\0582_4179-E.ptd第 11 頁 460430 五、發明說明(8) 表一 冒施例 燒結溫度 (°C) 燒結時問 (min) 相對密度 (%) 介電係數 (@1ΜΗζ) 介電損失 (@1ΜΗζ) 1A 850 15 72.85 X X 1B 850 30 73.34 X X 1C 850 60 7 2.85 X X 1D 875 15 73.83 X X 1E 875 30 73.40 X X 1F 875 60 73.20 X X 1G 900 15 74.03 X X 1H 900 30 73.48 X X 11 900 60 74.52 X X 2A 850 15 91.70 X X 2B 850 30 91.31 X X 2C 850 60 90.92 X X 2D 875 Ϊ5 91.40 X X 2E 875 30 91.55 X X 2F 875 60 91.28 X X 2G 900 15 91.61 X X 2H 900 30 91.22 X X 21 900 60 91.07 X X 3A 850 15 97.64 8.17 0.0018 3B 850 30 98.17 8.19 0.0012 3C 850 60 96.80 8.10 0.0009 3D 875 15 96.21 8.05 0.0011 3E 875 30 96.21 8.01 0.0008 3F 875 60 96.02 8.04 0.0007 3G 900 15 96.55 8.08 0.0010 3H 900 30 96.05 8.04 0.0 0 08 31 900 60 95.01 7.95 0.0009C: \ Program Files \ Patent \ 0582_4179-E.ptd page 11 460430 V. Description of the invention (8) Table 1 Examples of sintering temperature (° C) Sintering time (min) Relative density (%) Dielectric coefficient ( @ 1ΜΗζ) Dielectric loss (@ 1ΜΗζ) 1A 850 15 72.85 XX 1B 850 30 73.34 XX 1C 850 60 7 2.85 XX 1D 875 15 73.83 XX 1E 875 30 73.40 XX 1F 875 60 73.20 XX 1G 900 15 74.03 XX 1H 900 30 73.48 XX 11 900 60 74.52 XX 2A 850 15 91.70 XX 2B 850 30 91.31 XX 2C 850 60 90.92 XX 2D 875 Ϊ5 91.40 XX 2E 875 30 91.55 XX 2F 875 60 91.28 XX 2G 900 15 91.61 XX 2H 900 30 91.22 XX 21 900 60 91.07 XX 3A 850 15 97.64 8.17 0.0018 3B 850 30 98.17 8.19 0.0012 3C 850 60 96.80 8.10 0.0009 3D 875 15 96.21 8.05 0.0011 3E 875 30 96.21 8.01 0.0008 3F 875 60 96.02 8.04 0.0007 3G 900 15 96.55 8.08 0.0010 3H 900 30 96.05 8.04 0.0 0 08 31 900 60 95.01 7.95 0.0009
HHI C:\ProgramFiles\Patent\0582-4179-E.ptd第 12 頁 460430 五、發明說明(9) ----- 。在上述的實施例三中的陶瓷成分均可在低溫(85〇〜 900 C)與短時間内(15〜60分鐘)完成95%以上的緻密化, 且燒結是在空氣氣氛中完成。由於完成高緻密化所需的燒 結溫度與低熔點、低阻抗的導體如金與銀均能相容,因此 在實施例中所有的介電成分均可與金或銀導體共燒。另 外、在實施例中的介電成分均擁有低介電係數 (7.95〜8·19)與低介電損失(〇〇7~〇.18%)。而所有成分的 熱膨脹係數均在5. 2〜6. 2 p p m / °C之間。 在上述的實施例中,所有的介電成分均可與低熔點、 低阻抗的導體如銀共燒製成積層基板或元件。在製程上首 先必須將上述的介電成分與有機溶劑如甲笨與乙醇,有機 黏結劑如Polyvinyl butyal (PVB)及塑化劑如Dibutyl Phthalate (DBP)混合形成漿料,經刮刀成形產製厚度約 為125微米的生胚薄片,然後經沖片裁成1〇公分見方的生 胚薄片。利用模具在生胚薄片上打孔,孔徑約為j 2 5微 米,經網印將導體膏如銀填入孔中。另外、在生胚薄片上 的導體線路亦經網印製成。網印與填孔好的生胚薄片再依 序堆疊,經疊壓製成積層陶竞生胚,疊壓的條件為 r ^1 000-3000 pS1 〇 ^ ^ ^ ^ Λ Λ7 經脫脂與共燒(800-900 °C)完成緻密化。 實施例中的介電成分亦可經由傳統製程如乾壓、冷均 壓與熱均壓製成各種不同形狀與不同用途的陶竟體。以乾 壓為例,陶瓷粉末可與水與黏結劑如Polyvinyl alcohol (PVA)混合,經喷霧造粒後改進粉體的流動性,再經乾HHI C: \ ProgramFiles \ Patent \ 0582-4179-E.ptd page 12 460430 V. Description of the invention (9) -----. The ceramic components in the third embodiment can be densified more than 95% at a low temperature (85-900 C) and in a short time (15-60 minutes), and the sintering is completed in an air atmosphere. Since the sintering temperature required for high densification is compatible with low melting point, low impedance conductors such as gold and silver, all dielectric components can be co-fired with gold or silver conductors in the embodiment. In addition, the dielectric components in the examples all have a low dielectric constant (7.95 to 8.19) and a low dielectric loss (07 to 0.018%). The thermal expansion coefficients of all components are in the range of 5. 2 ~ 6. 2 p p m / ° C. In the above embodiments, all the dielectric components can be co-fired with a low melting point, low impedance conductor such as silver to form a laminated substrate or element. In the manufacturing process, the above-mentioned dielectric components must be mixed with an organic solvent such as methylbenzene and ethanol, an organic binder such as Polyvinyl butyal (PVB), and a plasticizer such as Dibutyl Phthalate (DBP) to form a slurry, which is formed by a doctor blade to produce a thickness. A green embryo sheet of about 125 microns was punched into a 10 cm square green embryo sheet. Holes were punched in the raw embryo flakes using a mold with a hole diameter of about 25 microns, and a conductor paste such as silver was filled into the holes by screen printing. In addition, the conductor lines on the green embryo sheet are also made by screen printing. The screen-printed and hole-filled raw embryo flakes were stacked in order and laminated to produce laminated ceramic embryos. The conditions for lamination were r ^ 1 000-3000 pS1 〇 ^ ^ ^ ^ Λ 7 after degreasing and co-firing (800- 900 ° C). The dielectric components in the embodiments can also be made into ceramic bodies of various shapes and uses through traditional processes such as dry pressing, cold equalizing, and hot equalizing. Taking dry pressing as an example, ceramic powder can be mixed with water and a binder such as Polyvinyl alcohol (PVA). After spray granulation, the powder's fluidity can be improved.
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