TW457759B - Converter for electricity and its manufacturing method - Google Patents

Abstract

The present invention relates to the electricity converter that uses semiconductor switching-devices. The electricity converter has the first conductor and the second conductor, which constitute the components of the connection circuit. Overlapped portion and non-overlapped portion are formed on at least one portion of the projection surface with respect to the thick plate direction of the first conductor. On one portion of the first conductor or the whole region of the first conductor, the second conductors are closely disposed at the positions separating from each other with a constant distance. At least one point of the second conductor is electrically connected with the first conductor. According the present invention, the inductive current is generated on the second conductor to cancel out the magnet beam of the first conductor such that the wiring inductance of the first conductor can be decreased.

Description

457759 A7 B7 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (2) Withstand voltage: The capacity of the capacitor is enlarged in proportion to almost the second power of the specified voltage. Therefore, the distance between parts must be increased. Furthermore, the area of standardized wiring installation has also increased due to the increase in the size of circuit components. Because it is a large-capacity converter, it is larger than the above to obtain the absolute green distance of the same and reverse current, so the wiring is reduced. Effect of reducing inductance. In addition, almost there is no current in the vicinity of the wiring conductors connecting the parts, which is absolutely the same and reverse. Therefore, in the actual power converter, there is a problem with the following wiring inductance. Figure 22 shows an example of the configuration of a power converter. 'Converter 1 〇2 that converts AC voltage of AC power source 1 to DC voltage, and smoothing capacitor 1 that smoothes the output voltage of converter 102 0 3, and the DC voltage is converted into an AC voltage inverter 104, and an AC motor 105 driven by the output AC voltage of the inverter .104 is constructed. The smoothing capacitor 103 can be applied to the wiring conductors shown in FIG. 26, but it is not easy to apply to the inverter section or the converter section, and problems such as over-voltage due to wiring inductance occur. Here, the neutral point positioning method is shown as a representative example. In the case of a converter or an inverter composed of a semiconductor switching element, the problem of wiring inductance also occurs in a power converter. In addition, the semiconductor switching elements used in the converter 102 and the inverter 104 are the same for any of the elements. Fig. 23 (1) is a diagram showing a part of a conventional converter circuit or inverter circuit using a self-arc-type semiconductor device. The circuit using GTO is convenient, but the circuit that replaces GTO with I GBT corresponds to the electricity around the IGBT that contains the IGBT in Figure 22 (please read the precautions on the back before filling this page), · ** Γ: ~ Γ) This paper size applies to Chinese National Standards (CNS > A4 size (210X297 mm) -5- Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy 457 75 9 A7 ___B7___ V. Description of the invention (3) Road. 2 3 (2) shows the waveform of the anode-cathode voltage Vak when the current of the arc-extinguishing semiconductor element is cut off. Here, it is convenient to use 〇1′〇31 1 as the arc-extinguishing semiconductor element. The circuit shown in Figure 2 3 ¢ 1) illustrates the operation when GT03 1 is turned off. The current that is applied when GT 0 31 is in the ON state is the process of transitioning to the ON state from the ON / OFF action of GT03 1, and it is divided into the buffer diode 3, buffer capacitor 3 3, and so on. Snubber circuit. At this time, a charging voltage is generated in the buffer capacitor 33 with the buffered current. The current change rate d i / d t flowing into the snubber circuit after the disconnection is the same as the current drop rate d IAK / d t of the GT03 1. Further, the parasitic inductance 3 4 is the sum of the wiring inductance in the wiring connecting the buffer circuit and the GTO31 or the internal inductance of the buffer capacitor 3 3. It is determined by the product of the inductance and the current change rate di / dt of I a κ Voltage VL s. Furthermore, the buffer diode 32 also generates a voltage Vds formed by the current change rate di / dt. Therefore, spike voltage VDSP is added to GT031 as the sum of the charging voltage of snubber capacitor 3 3 and the induced voltage of parasitic inductance 34 in the snubber circuit and the transition voltage V0s of snubber diode 32. It can also lead to GTO destruction; GTO 31 must be used in the field of safe operation. Therefore, when the parasitic inductance 34 is increased, there is also a problem that it is necessary to reduce the cut-off current and the like, thereby reducing the utilization factor of the device. Therefore, it is necessary to reduce the parasitic inductance 34 in the snubber circuit.

Furthermore, if the GTO 3 1 completes the disconnection operation, the above-mentioned d i / d t voltage is not generated; the voltage VAK added to the terminals of GT03 1 VAK < please read the precautions on the back before filling this page)

This paper size applies to Chinese National Standards < CNS) A4 specification (210X297 gong) -6- 45 "5 9 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) Only formed as a buffer capacitor 3 The charging voltage Ves of 3. However, the energy stored in the parasitic inductance 34 of the snubber circuit is to cause the excess charging voltage of the snubber capacitor 33 to be the same as that of the positioning diode 38 or the positioning capacitor 36. Combined with the parasitic inductance in the positioning circuit, the maximum voltage VDM is added to the GTO 31. That is, the increase in the parasitic inductance of each part causes the peak voltage Vdsp or the maximum added voltage VDM to increase. About the maximum added voltage V DM of the G TO It is also determined according to the component specifications, and the element is destroyed if the current is cut off beyond this limit. Therefore, when the parasitic inductance 37 is large, the cut-off current must also be reduced, which will reduce the component utilization rate. The present invention aims to solve the problem The purpose of the above problem is to obtain a situation where the size of the arc-extinguishing semiconductor element is increased, and the buffer circuit or the positioning circuit function as a protective circuit function is large. Power converters that can reduce parasitic inductance in circuits such as snubber circuits and positioning circuits. [Means to Solve the Problems] The above objectives are achieved by the following means. The first means is the first for wiring. The conductor near the first conductor is independent of the first conductor, and a second conductor that generates an induced current according to a change in the current of the first conductor is arranged. The second means is to be near the first conductor for wiring and to be the first conductor. Independently, a second conductor that generates an induced current due to a change in the current of the first conductor is disposed, and the first conductor and the second conductor are conductively connected at least at one point. The third means is near the first conductor for wiring. Configuration and Section < Please read the note on the back before filling this page) The size of the paper used in this edition applies to Chinese national standards (CNS > A4 specifications (210X 2mm) -7- A7 B7 Employee Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs Printed 457759 V. Description of the invention (5) 1 Conductor is an independent second conductor, and at least the point-point conductively connects the first conductor and the second conductor. The fourth means is to make it suitable for wiring with the opposite width. Thickness of the Jth conductor The projection surface in the direction forms at least a part of the overlap and a part of the non-overlapping part, which is close to the first conductor and is arranged as a second conductor independent of the first conductor, and is conductively connected to the first conductor close to at least one point on the second conductor. The fifth means is to form a portion having a full width of 10 to 60% in a portion overlapping with the projection plane in the direction of the thick plate of the first conductor, and to arrange the width and width close to and parallel to the first conductor. The second conductor with the same width as the first conductor is conductively connected to the first conductor that is close to at least one point on the second conductor. The sixth means is to make the magnetic beam caused by the reciprocating current to cancel each other out. The two first wide conductors for the wide-area wiring, which are opposite to each other, are formed on the projection surface facing the direction of the thick plate of the first conductor, forming at least a portion that overlaps and a portion that does not overlap, and is close to the first conductor. The second conductor is arranged rearward, and is electrically conductively connected to the first conductor near at least one point on the second conductor. The seventh means is to make the semiconductor switching element overlap or at least partially overlap with the projection surface of the first conductor plate for the wiring for increasing and decreasing the current width when the semiconductor switching element is turned on or off. In addition, a part that does not overlap is arranged close to the first conductor, and a second conductor that is independent of the first conductor is disposed, and is conductively connected to the first conductor that is close to at least one point on the second conductor. (Please read the notes on the back before filling this page)

This paper size applies the Chinese National Standard {CNS) A4 specification (2 丨 0X297 mm) -Q-, printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 4 57 75 9 A7 A7 _____B7_ V. Description of the invention (6) According to the above Means, due to a change in the main current of the first conductor, an induced current opposite to the main current is generated in the second conductor. Therefore, the inductance of the first conductor is reduced. The following description clearly describes other specific means. [Embodiment] Embodiment 1 The first diagram is a wide-width wiring conductor showing a power converter according to a first embodiment of the present invention. The circuit is constituted by a first conductor 1 connected to a circuit component and flowing a circuit current, and a second conductor 2 not flowing a circuit current independently of the first conductor. The first conductor 1 is contained in the second conductor 2 from the projection plane in the direction of the thick plate, and the second conductor 2 wider than the first conductor 1 is arranged in parallel from the first conductor 1 at a constant distance. It should be noted that the second conductor 2 is a conductor provided at a point different from the connecting conductor of the component constituting the circuit; in this case, a conductive bolt 5 is connected to the first conductor at one point in order to fix the potential. For this reason, corona discharge between conductors can be prevented. However, the ring-shaped spacer 7 is provided with a first conductor and a second conductor for separation at a certain distance. The spacer 7 may be a conductor or an insulator. It is defined here as a conductor that is thicker than a wide conductor. However, in the conductor 1, since the self-inductance is reduced, it is reasonable to increase the width to twice or more the thickness. Let the self-inductance of the first conductor 1 be L s 1: Let the mutual inductance between the first conductor 1 and the second conductor 2 be M, and the inductance L of the first conductor 1 when the second conductor 2 is arranged is formed as The following formula "This paper is again applicable to China National Standards (CNS) Α4 specifications < 210 \ 297 mm > (Please read the precautions on the back before filling this page)

Central Economic Bureau Standards Bureau Consumers' Cooperatives Printing Association 417759 Α7 Β7 V. Description of the Invention (7) [Number 5] L = L s 1 + Μ ..... [Number 3] According to this formula, the sign of mutual inductance M is The larger the negative and the absolute absolute value of M, the lower the inductance L of the first conductor 1. Next > The operation when a circuit current is applied to the first conductor 1 will be described. If the direction of the current of the first conductor 1 is set to the arrow direction (II) shown in the figure, the current flowing in the second conductor 2 directly below the first conductor 1 is opposite to the current of the first conductor 1, and in The electric current in the same direction as the first conductor 1 in the portion away from the first conductor. This situation can be explained by a phenomenon called electromagnetic induction, that is, directly below the first conductor 1, and the second. The conductor generates a current opposite to the first conductor 1, which is used to offset the current due to the first conductor 1. The generated magnetic beam. The second conductor 2 which is non-conductively connected to a portion other than the connection portion of the conductive bolt 5 must return the induced current along the circuit to the starting point, but flow back from the first conductor to the distant portion. It is avoided from the magnetic flux (12) of the first conductor 1. The current in the same direction as the first conductor 1 generated by the second conductor 2 has a magnetic flux that increases the first conductor 1. Therefore, in order to reduce the magnetic flux of the first conductor 1, the electromagnetic coupling between the first conductor 1 and the second conductor 2 is increased; further, the width of the second conductor 2 must be expanded to weaken the magnetic flux of the first conductor 1. In other words, the effect of increasing the reverse current induced to the second conductor 2 and the effect of reducing the current in the same direction are reduced, but the sign of the number M is negative, which increases the absolute chirp. (Please read the note IW-item on the back before filling this page)

This paper scale is applicable to China National Standard (CNS) A4 specification (210X297 mm) 10- A7 B7 Department t Central Standard 隼 扃 Bei Gong Consumer Cooperative Press 457753 V. Description of the invention (8) About the distance between these conductors and wiring inductance Fig. 3 shows the verification result of three-dimensional analysis in the form shown in Fig. 2. In the form shown in FIG. 2, the first conductor 1 and the second conductor 2 are arranged at a constant distance d and are gathered at the center line in the width direction. Fig. 3 shows the relationship between the distance d between the first conductor 1 and the second conductor 2 and the inductance L of the first conductor 1 formed by the width of the second conductor 2. As a result, the width of the second conductor 2 is the same as that of the first conductor 1, and the inductance is the same as that of the case without the second conductor. 値 'There is no effect of reducing the inductance, and the width of the second conductor 2 is expanded to the first. If the width of the conductor 1 or more is increased, the effect of reducing inductance is further increased. “Further”, the shorter the distance between the first conductor 1 and the second conductor 2 is, the more the effect of reducing inductance is increased. In this case, when the distance between the first conductor 1 and the second conductor 2 is shortened, the degree of bonding between the two conductors is increased; when the width of the second conductor 2 is expanded, the effect of increasing the magnetic flux of the first conductor 1 is weakened. ° In the form of FIG. 2 'As an example, the width of the wiring conductor 1 is set to 7 5 mm' and the thickness is set to 6 mm. However, if the width of the conductor is set to 6, the inductance reduction effect is almost the same as that shown in FIG. 3. The distance between the first conductor and the second conductor 2 may be 3 mm or less. However, when the distance is 0 mm at this time, the first conductor and the second conductor 2 are in contact with each other. In order to eliminate the effect of the second conductor, a thin insulating sheet is sandwiched between them, so the distance must be ensured. However, in FIG. 2, the second conductor 2 and the first conductor 1 ′ are not connected, but when they are connected at one point, the characteristics are the same as the results in FIG. 3. The connection method is to fix it with conductive bolts' or to use soldering or soldering. In any case, conductive connection is sufficient. In addition, it is connected to the second conductor 2 at the two ends of the first conductor in the longitudinal direction, and there are a plurality of places (read the precautions on the back before filling in this page)

This paper size applies to China National Standard (CNS) A4 (210 × 297 mm) -11-Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 457759 A7 ___B7 _____ V. Description of the invention (9) Connecting two conductors, the second Since the current formed by the conductor 2 as the first conductor 1 diverges, the effect formed by the present invention between the connection spaces is not sufficiently exerted. However, since the wiring inductances of the first conductor and the second conductor are connected in parallel between the connecting spaces, the self-inductance can be reduced to a certain degree. Therefore, the first conductor and the second conductor may be electrically conductively connected in a plurality of places. I means that it is in the second conductor and a circuit current may flow locally. However, the overall configuration of the power converter of this embodiment has the configuration of Fig. 22. This also applies to the following embodiments. Embodiment 2 Fig. 4 is a diagram showing a wide-width wiring conductor of a power converter according to a second embodiment of the present invention. It is placed on the projection surface of the first conductor 1 in the direction of the thick plate. The overlapped portion can be moved in parallel to the first conductor 2 of the same width as the first conductor 1 and then arranged at a certain distance. 5 The first conductor 1 and the second conductor 2 are connected at one point, and a spacer 7 is provided in order to maintain a distance between the two. In Figure 4, the difference from Figure 1 is the width of the second conductor 2. Specifically, the second conductor 2 is wider than the first conductor 1 in the first figure; for the first conductor 1, The projection surfaces in the thick plate direction all overlap the second conductor. In FIG. 4, the first conductor 1 and the second conductor 2 have the same width. The projection surface of the first conductor 1 overlaps a part of the second conductor 2 and also has: Non-overlapping sections. The operation when current flows through the first conductor 1 is the same as that shown in the first figure; the second conductor 2 senses the first conductor 1 at the portion where the projection plane in the direction of the thick plate of the first conductor 1 overlaps. Reverse current, and this paper size applies Chinese National Standard (CNS) A4 scale (2 丨 0X297 mm) (Please read the precautions on the back before filling out this page) 457759 A7 ____B7_ 5. Description of the invention (10) In the non-overlapping part, currents in the same direction are induced. (Please read the notes on the reverse side before filling out this page) The 6th figure printed by the Central Standards Bureau, Ministry of Economic Affairs, Machining and Consumer Cooperatives is shown in the form shown in Figure 5, and its changes are similar to those of the 2nd conductor. When the ratio of the portions where the projection planes in the thick plate direction of the conductor 1 overlap is the inductance of the first conductor 1. The result is a = 〇, that is, when the projection plane for the thick direction of the first conductor 1 and the second conductor 2 completely overlap, there is no effect of reducing the inductance of the first conductor 1 (in the third figure, referring to the absence of a conductor and W = 75mm). When it is increased by a, the second conductor 2 is moved in parallel in the width direction, and the inductance reduction effect of the first conductor 1 is gradually enhanced, and it becomes the largest at a certain point shape. Further increasing it by a and having the same width as the first conductor 1 means that the second conductor 2 is weakened until the second conductor 2 is formed so as not to overlap the projection surface of the first conductor 1 in the thick-plate direction. "Inductance reduction effect". In other words, it overlaps with the second conductor 2 in the range of 10% to 60% on the projection surface of the first conductor 1 in the direction of the thick plate, and is arranged close to and parallel to the same width as the first conductor 1. For the second conductor • Increase the inductance reduction effect of the first conductor. In the form of FIG. 5, the width of the first conductor is set to 7.5 mm and the thickness is set to 6 mm. However, if it is a wide conductor, the effect of reducing inductance is almost the same as that of FIG. 6. However, the omission is that the form shown in FIG. 5 also electrically connects the first conductor 1 and the second conductor 2 in a conductive manner, but also has a conductive effect when a conductive connection portion is provided. The figure shows the width of the power converter in the third embodiment of the present invention. 13- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0 X 297 mm). Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ A7 ___ B7 _ 5. Description of the invention (11) Structure of wiring conductor. The first conductor 1 is spaced apart from the second conductor 2 by a certain distance, and the second conductor 2 is arranged so that the projection planes in the thick plate direction of the first conductor 1 overlap and non-overlapping. The difference between FIG. 7 and FIG. 5 is the width of the second conductor 2: Specifically, in FIG. 5, the second conductor 2 having the same width as the first conductor is disposed in FIG. The width is an arbitrary width. The point where the second conductor 2 is arranged so as to form an overlapping portion and a non-overlapping portion with respect to the projection surface of the first conductor in the thick plate direction is common to FIG. 5; The width of the overlapping portion is set to a. Fig. 8 shows the result of three-dimensional analysis using the form of Fig. 7. Fig. 8 is a graph showing the inductance of the first conductor 1 when it is changed at a and b in Fig. 7. Based on this result, increasing a means increasing the area where the projection surface of the first conductor .1 in the direction of the thick plate does not overlap with the first conductor increases the effect of reducing inductance; It is known that a half of the width is sufficient to obtain a sufficient inductance reduction effect if the portion overlapping with the second conductor 2 is expanded if the projection surface in the direction of the thick plate of the first conductor 1 extends to about half of the first conductor 1. In addition, the reduction effect from the figure is the point at which the second conductor 2 is arranged to consider that the width of the first conductor 1 overlaps more than 10%.》 Furthermore, the first conductor 1 and the second conductor 2 do not overlap It is considered that the width of the portion is reduced to be i .. 1/2 or more of the width of the first conductor 1 and the arrangement is reduced. Therefore, in order to reduce the inductance, the width of the first conductor 1 is overlapped by 10% or more, and the second conductor 2 is arranged, or the width of the portion where the first conductor 1 and the second conductor 2 are not overlapped is set. --- V-- formed in the width of the 1st conductor 1: ---- "-β-- (Please read the precautions on the back before filling out this page} The size of the paper is applicable to the Chinese National Standard (CNS) Α4 Specifications (210 X 297 mm) -14- 457759 The Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, India Fan A7 B7 V. Description of the invention (12) 1/2 or more, or a combination of these conditions. However, The overlapped portion is set to half of the first conductor 1, and the second conductor 2 is interposed between the first conductor 1 and the center line of the width of _2 minutes as the axis. The structure of the first conductor 2 and the first conductor 2 are symmetrically added. The figure is the same. Therefore, the structure in Figure 1 is formed to have approximately twice the inductance reduction effect of the structure in Figure 7. However, due to the specifications of the mounting space, etc., the first conductor 1 is expanded only on the side of the first conductor 1. When two conductors 2 are used, the configuration shown in FIG. 7 is effective. However, the form shown in FIG. 7 also omits the first conductor 1 and the second conductor. 2 has a conductive connection relationship, but when it has a conductive connection part, it has the effect of reducing the inductance. The thickness of the second conductor will be described below. The first figure is the first figure when the thickness of the second conductor is changed. Inductance of conductor 1 ° In any case, the first conductor is set to a width of 75 mm, the thickness is 6 mm, and the length is 1000 mm. The length of the second conductor 2 is set to 1000 mm: (1) The scheme shown in Figure 2 is used. The relationship sets the width W of the second conductor 2 to 150 mm, and the distance d between the first conductor 1 and the second conductor 2 is 1 mm. (2) In the solution, the second conductor 2 is shown in the relationship shown in FIG. 2 The width W is set to 15 Omm, and the distance d between the first conductor 1 and the second conductor 2 is set to 0.1 mm: (3), the first conductor 1 and the second conductor are arranged in the arrangement relationship shown in FIG. 5 The distance d of 2 is set to 1mm'a = 37.5mm, that is, when the overlap between the projection surface of the first conductor in the direction of the thick plate and the second conductor 2 is 50%. "As a result, any In the case of 'the inductance reduction effect is changed because the thickness of the second conductor is about 1 mm', the paper size of the second conductor 2 is known to apply the Chinese national standard (CNS) A4 existing grid (210X297 mm) -stl. (Please read the note on the back of the item and then fill in this page)

Printed by the Central Standard of the Ministry of Economic Affairs, Coconut Consumer Cooperative 457759 A7 B7 V. Description of the invention (13) If the thickness is more than 1 mm, it is sufficient. When the second conductor 2 is thinned, the effect of reducing the inductance reduction is considered to increase the impedance point. In this analysis, it is estimated that copper is used for the first conductor 1 and the second conductor 2. However, if the second conductor 2 is made of a material having a lower resistivity than copper, the thickness of the second conductor 2 can be made thinner. Fourth Embodiment Fig. 9 is a sectional view and a plan view showing the structure of a wide-width wiring conductor of a power converter according to a fourth embodiment of the present invention. The second conductor 2 is formed so as to be heavy with respect to the projection surface of the first conductor 1 in the direction of the thick plate. The overlapped portion and the non-overlapping portion are brought close to the first conductor 1 in parallel with a certain distance; The center line S-S in FIG. 1 is arranged symmetrically as two axes. The second conductor. Figures 91 and 92 in the cross-sectional view of Figure 9 indicate the direction of the current. The figure 91 in the cross-sectional view of the first conductor 1 indicates the flow from the back side of the paper surface to the surface side; the figure 9 in the cross-sectional view of the second conductor 2 indicates the flow from the surface side of the paper surface. To the back. That is, it means that the second conductor 2 is induced in the direction of the first conductor 1 in the area overlapping with the projection plane of the thick plate direction of the first conductor 1; A portion away from the conductor 1 induces a current in the same direction as the first conductor 1. The difference between Fig. 9 and Fig. 1 is the arrangement method of the second conductor 2. Specifically, in FIG. 1, for the arrangement of one wide conductor 'in FIG. 9, the second conductor 2 is divided and each of them is moved in parallel to the outer direction; The size of the central paper is applicable to the Chinese National Standard (CNS) A4 specification (2) × 297 mm. ------------ (Please read the precautions on the back before filling this page) Order 457759 A7 B7 5. Description of the Invention (14) The portion is formed so as not to overlap the second conductor 2. From the results of FIGS. 6 and 8, it is clear that the center portion of the projection surface does not overlap the second conductor, and also has the effect of reducing the wiring inductance of the first conductor 1. However, the conductive connection relationship between the first conductor 1 and the second conductor 2 is also omitted in FIG. 9. The second conductor 2 shown in Fig. 9 is considered to be equivalent to the case where an opening is inserted in the center portion of the second conductor 2 shown in Fig. 1 as shown in Fig. 10. Therefore, even when the second conductor 2 shown in Fig. 1 is inserted into the opening, the inductance reduction effect of the first conductor 1 is also obtained. Furthermore, if the magnetic flux leakage of the first conductor 1 can be formed to the same extent as the second conductor 2 placed in the opening in the portion overlapping the projection plane in the direction of the thick plate with respect to the first conductor 1, the second conductor is In the case where 2 is formed in a mesh shape, as in the case of FIG. 9, the effect of reducing the inductance with respect to the first conductor 1 is also achieved. The Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs of the People's Republic of China is the second one. The results of analyzing the relationship between frequency and inductance reduction are shown in Figure 12. In any case, the first conductor is set to a width of 7 5mm, a thickness of 6 mm, and a length of 1,000 mm. The length of the second conductor 2 is set to 100 mm; (0) The first conductor 1 is separate when there is no second conductor 2. The (1) solution uses the arrangement relationship shown in FIG. Figure, and also with 2 m; 1, 1 mm body m m body with om m 1 ^ 17, L〇τ-1 LO 1 Case 1. The first and third party < is ο will be 7 will be set to system 3 ， W set off-one m2 degrees d set am {wide separation, ο; distance m 5m2 of the m 1m body 2 where 1 is 1 conductor diagram is set to 2 and 5 set W to set the second d degree d The distance between the first and the second distance, the distance from the second side of the case 2 and the second side of the body 2 and the second side of the body conductor 1 > Guide 2 Guide 3 2 The second place (please first Read the notes on the back and fill in this page) This paper size applies to Chinese National Standard (CNS) A4 (2H) X297 mm) -17- 4S7759 Α7 Β7 V. Description of the invention (彳 5) Projection direction of the slab 1 and the overlapping portion of the second conductor 2 is 50%. Based on the results of Figure 12, in any case, the effect of reducing the inductance is increased in the vicinity of 50000H2; it is known from the frequency band where the skin effect occurs; the inductance of the first conductor 1 formed by the second conductor 2 decreases effect. The skin effect is a phenomenon in which the current accumulated in the surface * decreases as the frequency of the current increases. At this time, the internal conductor is almost irrelevant to the conduction of current, the apparent cross-sectional area is reduced, and the impedance becomes larger. The same is true for magnetic flux. The penetration depth (epidermal depth) 3 of the magnetic beam is expressed by a sub equation. 〔Number 6〕 (Please read the notes on the back before filling in this page) ij— I-1 ·

&lt; 1T s ~ V u ...... (Number 4) Printed here by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, where W is the angular frequency of the current being applied to the first conductor 1, and σ is The electrical conductivity of the first conductor 1 is the magnetic permeability of the first conductor. The power converter using a semiconductor switching element has the problem that a surge voltage is added to the semiconductor element when the semiconductor switching element is switched with a wiring inductance. The switching frequency of a semiconductor element is very high speed of 10 Η ζ ζ; it is usually to increase the frequency at which the skin effect occurs6. Therefore, it is known that the above-mentioned wiring structure exhibits an effect of reducing the inductance when a semiconductor switch is used. However, the conductor arrangement shown in Fig. 9 · The two second conductors 2 are symmetrically arranged, but because it can be used for the thick paper size of the first conductor 1, the Chinese National Standard (CNS) Α4 specifications & lt 210X29 * 7 mm) -18-## 7759 A7 B7 V. Description of the invention (16) The projection surface in the direction of the board forms overlapping and non-overlapping parts, and if the second conductor 2 is arranged, the inductance reduction effect is obtained, so The second conductor 2 does not need to be symmetrically arranged, and the width of the two second conductors 2 does not need to be printed with the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Example 5 Figure 13 shows the fifth implementation of the present invention. A cross-sectional view of a structure of a wide wiring conductor of an example power converter. The first conductor 1 and the second conductor 2 are separated by a certain distance; the second conductor 2 has an overlapping portion and a non-overlapping portion on the projection surface of the first conductor 1: symmetrically arranged about the center line of the first conductor Two pieces of second conductor 2. Figure 1 3 (1) is the same as Figure 9. However, in FIG. 13, the conductive connection relationship between the first conductor 1 and the second conductor 2 is also omitted. Figure 3 shows the analysis results of the distance between the first conductor 1 and the second conductor, and shows that the closer this distance is, the greater the inductance reduction effect. Further, Fig. 11 shows the relationship between the thickness of the second conductor 2 and the inductance of the first conductor; and when copper is used as the second conductor 2, the effect of reducing the inductance is increased if the thickness of the second conductor 2 is 1 mm or more. When the second conductor 1 is close to the thin second conductor 2, it is very difficult to support each of the conductors in the air, so the method of supporting the second conductor 2 causes a problem. This place is in the diagram of 13th (2) to 13 (5), showing the method of fixing the first conductor 1 and the second conductor 2 through the insulator 3 by bonding or bolts, etc. (1) to (5) , The disposition relationship between the first conductor 1 and the second conductor 2 is the same; the dissimilarity point is sandwiched between the first conductor and the second conductor 2 (Jing first read the precautions on the back before filling this page} This paper size applies to China National Standard (CNS) A4 specification (210X; 297 mm) -19-ball "5 9 A7 B7 Consumers' cooperation with the Central Standards Bureau of the Ministry of Economic Affairs 衽 printed 5. Shape of the insulator 3 between the invention description (17). For the material used for the insulator 3, mica, glass epoxy resin, fiber-reinforced resin, etc. may be selected from the viewpoints of insulation, cost, and ease of processing. Either method is used to ensure a certain degree. The distance between the first conductor 1 and the second conductor 2 is maintained, so that the inductance reduction effect of the first conductor 1 can be exerted. In FIG. 13, the two conductors are shown as the second conductor in a symmetrical arrangement relationship. The projection surfaces of the first conductor 1 in the thick-plate direction form overlapping and non-overlapping portions When the second conductor +2 is arranged, the second conductor 2 is not symmetrical, and it does not need to have the same width. In addition, as shown in Fig. 1 or Fig. 5, one conductor is fixed in the same manner and separated. Under an insulator, the effect of reducing the inductance of the first conductor 1 can also be exerted. Embodiment 6 FIG. 14 is a cross-sectional view showing the structure of a wide wiring conductor of a power converter according to a sixth embodiment of the present invention. The first conductor 1 and the second conductor 2 are separated by a certain distance. The second conductor 2 has an overlapped portion and a non-overlapped portion in a projection plane with respect to the thickness direction of the first conductor 1. The first 1 ( The figure shows the connection between the first conductor 1 and the second conductor 2 through the insulating material 4. A plurality of folded surfaces are formed on the end surface of the insulating material to increase the creepage distance. When the first conductor 1 and the second conductor 2 are When the distance between them is wide, it is effective to increase the creepage distance of the insulation. In addition, in order to fix the first conductor 1, the second conductor 2, and the insulation material 4, the insulation bolts are used for bolting. The fiber-reinforced resin is used for the insulation bolts. Figure 14 (2) is the same as Figure 13 through the insulator 3 {Read the back first Note: Please fill in this page again.) The paper size of the book is the common Chinese National Standard (CNS) A4 specification (210X297 mm) -20- 457 759 Α7 Β7 Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (18) Fixed The first conductor 1 and the second conductor 2. They are fastened with insulating bolts in the same manner as in Fig. 14 (1). In addition, the width of the second conductor 2 and the insulator 3 is set to the same width as shown in the figure. To ensure the creepage distance of the insulation, the insulator 3 may be wider than the second conductor 2. In any case, it is applicable when the second conductor 2 is plural, and the inductance of the first conductor 1 can be used. Reduce effect. However, in this case, it is important to fix the first conductor i and the second conductor 2, and it is not limited to an insulating material such as an insulating spacer or an insulating bolt. In the case of conductive insulation, any connection means is possible. 7 FIG. 15 is a diagram showing a structure of a wide-width and wiring conductor of a power converter according to a seventh embodiment of the present invention. The second conductor 2 is a conductor wider than the first conductor 1 having a wider width. The arrangement relationship between the first conductor 1 and the second conductor 2 is the same as that in the first figure; the first conductor 1 and the second conductor 2 are arranged at a certain distance from each other. It is a method of keeping the distance between the first conductor 1 and the second conductor 2. In Fig. 1, spacer 7 is used; in Fig. 15, insulating spacer 8 is used. In the figure, the width of the insulating spacer 8 is set to be the same as that of the first conductor 1. However, if the distance between the first conductor 1 and the second conductor 2 is maintained, the insulation &lt; Available in width. In FIG. 15, similarly to FIG. 1, a part of the first conductor 1 and the second conductor 2 are electrically connected by the conductive bolt 5. Here, the purpose of the conductive connection between the two will be described. The second conductor 2 (Please read the precautions on the back before filling in this page) Ding-Φ • 0Τ. This paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) -21-457759 Α7 Β7 Central of the Ministry of Economy Standard 扃 Employee Cooperative Cooperative Printing 5. Invention Description (19) causes the electric potential to float, and after the current is re-energized to the first conductor 1, the potential β of the second conductor 2 rises, and the electric charge stored in the second conductor 2 Corona is generated by discharge; a false pulse wave is generated in the gate driving circuit of the semiconductor switching element, which may cause the semiconductor switching element to malfunction. In addition, corona also causes the problem of degrading the parts constituting the power converter and significantly shortening the life. Here, in order to avoid such problems, the potential of the second conductor 2 must be conductively fixed. As shown in FIG. 15, if a part of the second conductor 2 is conductively connected to the first conductor 1, corona does not occur. In addition, as mentioned above, it is necessary to pay attention when holding a plurality of connection points in the long direction of the first conductor 1, but it is not a problem to set a plurality of connection points in the wide direction. For example, this is equivalent to the case where the first conductor 1 is connected to the second conductor 2 with a conductive bolt or the like at both ends in the width direction. Fig. 16 is a diagram showing a method of fixing the first conductor 1 and the second conductor 2. The arrangement method of the first conductor 1 and the second conductor 2 is the same as that of the first figure. The point where the first conductor 1 and the second conductor 2 are fastened by the conductive bolt 5 is also the same as in the first figure, and the potential of the second conductor 2 is fixed to prevent corona. Figure 16 is different from Figure 1 in that the first conductor 1 and the second conductor 2 are fastened with insulating bolts: In order to maintain the distance between the first conductor 1 and the second conductor 2, A ring-shaped spacer 8 is sandwiched between the two conductors, and a bolt is inserted. A part of the conductive bolt 5 is fixed, and the method for fixing the first conductor 1 and the second conductor 2 is unstable. At this point, it is necessary to fix the portion where the conductive bolt 6 of the second conductor 2 is fastened and the other place to the first conductor 1. When it is fastened with conductive bolts, it is formed (please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS &gt; Α4 size (210X 297 mm) -22- 4 5: 7 7 5 3 A7 B7 V. Description of the invention (20) A current flowing in the same direction as the first conductor flows through the second conductor 2. That is, the function of the second conductor 2 as the divergence of the first conductor 1. Therefore, 'must be insulating The bolt formed by the bolt 6. + Of course, when the insulating bolt 6 is tightened, 'the course between the first conductor 1 and the second conductor 2 does not damage the inductance reduction effect. At this time, the insulator and the first conductor 1 1 conductor 1 or an insulator and a second conductor may be followed. Embodiment 8 FIG. 17 is a diagram showing a structure of a wiring conductor of a power converter according to an eighth embodiment of the present invention. The difference in Figure 1 is that in Figure 1, the shape of the second conductor 2 is a plate without bending, and in Figure 17, the second conductor 2 is used for the first conductor. The projection plane in the thick plate direction of the body 1 bends the portion overlapping the second conductor 2 perpendicularly. In the portion bent in FIG. 17, As part of the function of the return path of the induced current generated in the second conductor 2; the bending distance does not change the distance from the first conductor 1, so it has the same structure as that shown in FIG. In this case, it is also clear that the insulating material is sandwiched between the first conductor 1 and the second conductor 2, or the conductive material or the insulating bolt is used to tightly clamp the insulating material between the first conductor 1 and the second conductor. 2; The effect of reducing the inductance of the first conductor 1 can also be exerted. In addition, as for the bent portion of the second conductor 2, the portion where the projection plane 'for the thick plate direction of the first conductor 1 overlaps with the second conductor 2 is In part, it also has the effect of reducing the inductance of the first conductor even when it is bent. However, the case of vertical bending has been described in the figure, but the bending method of this paper applies the Chinese National Standard (CNS) A4 specification (2HJX297 mm) (Please read the precautions on the back before filling out this page) Order the staff consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, India, Fanfan 457759 A7 B7 V. Description of the invention (21) It is not necessary to be vertical, and it is also possible to bend multiple times. 9 Figure 1 8 shows A cross-sectional view of a wide wiring conductor of a power converter according to a ninth embodiment of the invention. Since the magnetic flux is canceled by a reciprocating current, the first conductor 11 and the first conductor 12 are reversed in current direction. Opposingly, the second conductor 21 and the second conductor 22 which are wider than the wiring conductor are arranged at a certain distance from each of the first conductors 11 and the first conductors 12 and the second conductors 21 and 22. The reference number 91 in the figure Reference numerals 92 and 92 indicate the directions of the currents in the respective conductors. It is known that the first conductor 11 and the second conductor 12 are opposed to each other over a wide area to reduce the inductance of the first conductor 11 and the first conductor 12. By placing the second conductor 21 and the second conductor 22 near each of the first conductors, the inductance can be reduced. Printed by Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs. The second conductor * indicates that it is installed for each first conductor, but it can be installed for either one. Of course, when such an arrangement is applied, an insulator is inserted between the first conductor and the second conductor, and the first conductor and the second conductor or the first conductor and the second conductor are fixed with a conductive bolt or an insulating bolt. It is clear that the insulators do not damage or reduce the inductance. However, since the potential of the second conductor 2 1 &gt; 2 2 is also fixed in Fig. 18, it must be electrically conductively connected to each of the first conductors 1 and 1 2 in close proximity. However, it is omitted in the figure. Example 1 0 -24- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) # 67759 A7 B7 V. Description of the invention (22) Figure 19 is the 10th embodiment of the present invention. This figure shows the wiring installation of the snubber circuit that protects the semiconductor switching element from the surge when the semiconductor switching element is turned off. As a semiconductor switching element, a GTO having a flat electrode surface is exemplified. Figure No. 31 is GTO 'Figure No. 32 is a buffer body, Figure No. 33 is a buffer capacitor, and Figure No. 39 is a cooling blade. GTO 31 and the buffer diode 32 are elements with flat electrode surfaces; an integrated stack is formed through the cooling blades 39. The stacked body and the snubber capacitor 3 3 are connected by the first conductor 1. However, the input and output terminals of the snubber capacitor 33 of the first conductor are arranged in close proximity to each other with the wide width of the first conductor 1 to reduce inductance. Furthermore, the second conductor 2 having a wider width than the first conductor 1 is disposed in close proximity to the projection surface of the first conductor 1 in the area of the first conductor 1 in a portion thereof. With such an installation, the effect of reducing the inductance can be exhibited in a section where the first conductor 1 cancels the magnetic flux in the same way and a section where the same first conductor 1 cancels the magnetic flux in the same way. The second conductor 2 and the first conductor are connected by a conductive bolt 5, and the potential of the second conductor 2 is fixed. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. However, as a semiconductor switching element in this case, if the electrode surface is flat, anti-conduction GTO thyristor, IGBT, SI thyristor, SIC, etc. . In addition, the case where the GT031 and the buffer diode 3 2 are crimped to the same laminated body has already been explained. However, because the element sizes of the GTO 31 and the buffer diode 32 are different, the crimping In the case of each of the stacked bodies, the first conductor is connected between the components that form the snubber circuit, and the second conductor is arranged as described above, and the parasitic inductance reduction effect in the snubber circuit is exhibited. Regardless of the composition of the delay -25- <Please read the notes on the back before filling out this page) This paper size applies to Chinese national standards (CNS &gt; A4 specifications &lt; 2 丨 0X297 mm) Employees of the Central Standards Bureau of the Ministry of Economic Affairs Cooperative cooperative seal 4 57 7 5 9 A7 B7 V. Description of the invention (23) The arrangement of the components of the punching circuit 'The first conductor arranged between the components connected to the buffer circuit is provided with the above-mentioned second conductor, which can exert the parasitic inductance in the buffer circuit. Reduce effect. In addition, the side pattern shown in FIG. 19 is an L-shaped first conductor, or in a special case, the second conductor may be applied to the first conductor having an uneven width. In any case, the second conductor may be arranged so as to form at least-partly overlap "on the projection surface in the direction of the thick plate of the first conductor and not overlap. However, in Fig. 19, the auxiliary components, insulators, and crimping components used for self-returning diodes, snubber resistors, or snubber energy regeneration circuits are omitted, but it is clear that they can be applied The substrate structure shown here. Embodiment 11 1 FIG. 11 of the present invention will be described with reference to FIGS. 20 and 21. Fig. 21 (1) is a diagram showing a buffer circuit and a positioning circuit for protecting a semiconductor element from a generated surge when the semiconductor switching element is turned off. Figure 20 shows a side view when this part is mounted. + As a semiconductor switching element, as in Fig. 19, G T 0 having a flat electrode surface is shown as an example. _The snubber circuit including the snubber diode 3 2 and the snubber capacitor 3 3 has the same structure as in Fig. 19, and the second conductor 2 is arranged close to the wide first conductor 1 in the snubber circuit. In Fig. 20, the circuit configuration of Fig. 19 is further added with a diode 35, a positioning capacitor 36, and a positioning diode 38. The first conductor 1 of the positioning electrical port is also arranged close to the second conductor 2. For the second guide, the paper size applies the Chinese National Standard (CNS) A4 specification (210X2? 7mm &gt; (Please read the precautions on the back before filling this page)

-26- 457759 A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative, V. Description of the Invention (24) The method of arranging the first conductor of the body 2 is in any case at least from the projection plane of the thick plate direction of the first conductor Some parts have overlapping parts; however, it is also important to have both non-overlapping parts. In order to fix the potential of the second conductor 2, a conductive bolt is connected to the first conductor 1: A spacer 7 is inserted to maintain a distance between the two. The inductance component parasitized in the first conductor 1 connected to the positioning capacitor 36 is equivalent to the parasitic inductances 37 and 42 in the figure 2 1 (1). The internal inductance of the positioning capacitor is also included in the parasitic inductance. However, in general mounting, the ratio of the inductance component of the wiring conductor is large. However, in Fig. 20, auxiliary components such as a free-turning diode, a buffer resistor, and a buffer energy regeneration circuit are omitted, but it is understood that the basic structure shown here can be applied. In addition, the insulator, the member for crimping, etc. are omitted. Normally, as a surge absorbing part of a self-arc-type semiconductor device, a buffer circuit is most preferably implemented. This is to suppress the spike-shaped voltage V D S P produced when the arc-extinguishing semiconductor element is turned off, and it is necessary to sufficiently reduce the parasitic inductance 34 in the snubber circuit. Therefore, in Fig. 20, the GTO 31 and the buffer diode 32 constituting the snubber circuit are adjacent to each other and crimped together in the same stack. V D s P must be followed by the maximum 乂 voltage VDM applied to G T 0 3 1. _ In the circuit shown in Figure 20, Vdm is determined as a series capacitor consisting of a positioning capacitor 36 and a buffer capacitor. 3 3 and a parasitic inductance 37 in the positioning circuit and a parasitic inductance in the buffer circuit The resonance formed by the series inductor group formed by 3 4. The L (: Electricity (please read the precautions on the back before filling out this page) order. 9.: F- &quot; This paper size applies to Chinese national standards (CNS specification U10X297 mm) 27- Central Bureau of Standards, Ministry of Economic Affairs Employee Consumer Cooperatives Co., Ltd. Li Li 457 75 9 A7 B7 V. Description of the invention (25) If there is an inductance component, then no excessive charging will occur to the capacitor because the resonance phenomenon does not occur. Therefore, the added voltage of G TO is also the same as that of the capacitor. In the same way, when the voltage reaches a certain value, it will be fixed as it is and remain a certain value. However, it is impossible to have no parasitic inductance in normal installation. In the case of parasitic inductance, the maximum voltage of G TO is reduced by The component to be fixed is the voltage rise component formed by the parasitic inductance. Therefore, the parasitic inductance in the LC resonance circuit must be suppressed to a minimum. However, as mentioned above, in order to install the snubber circuit first, crimp GTO or diode In the case of an integrated stack; the distance between the terminals of the semiconductor element connected to the positioning capacitor is increased, and the figure is omitted Semiconductor elements such as free-turning diodes are added to the stack to increase the connection to the positioning capacitor. The distance between the terminals on the semiconductor element side of the device and the capacity of the bit capacitor are larger than the capacity of the buffer capacitor, so the capacity of the positioning capacitor is increased, etc. The reason for this is to increase the patrol loop that forms the bit circuit. Therefore, comparing the parasitic inductance of the positioning circuit with the parasitic inductance of the snubber circuit is necessarily larger. Furthermore, the patrol loop that forms the positioning circuit is increased, It is possible to reduce the effect of offsetting the magnetic flux by the reciprocating current; and to accelerate the increase of parasitic inductance. Here, the first conductor 1 of the positioning circuit is arranged close to the second conductor 2 as described above, and the parasitic inductance can be reduced. In addition, FIG. 20 shows a case where the GT03 1 and the diodes 32, 35, and 38 have the same diameter and are crimped to the same-composite body, but the case where the diameters are different and the same body is formed is the same. Applying the second conductor 2 in the same manner as described above has the effect of reducing the inductance. In this way, the Chinese paper standard (CNS &gt; A4) Grid (210X297mm) (Please read the notes on the back before filling this page)

4 57 7 5 9 A7 B7 V. Description of the invention (26) The invention is suitable for the parts that do not have the effect of reducing the inductance of the past, so it can reduce the added voltage of the semiconductor switching elements and can safely operate the power converter. Further, when the cut-off current is reduced below the specification, it is related to an increase in the utilization factor of the device. Yin Fan, a Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) Second, according to the specific circuit description, increase the inductance reduction effect. Fig. 21 shows a part of an inverter or converter circuit using a semiconductor element. The inductances shown are all parasitic inductances; the anode reactor or load to reduce the current change rate of G T 0 31 is omitted. In FIG. 21 (1), the positioning capacitor 36 is connected to the negative terminal: side of the smoothing capacitor 40. In Fig. 21 (2), the positioning capacitor 36 is connected to the positive terminal side of the smoothing capacitor 40. First, the operation when GT031 is turned off in Fig. 21 (1) will be described. When GT0 31 is energized in the ON state, a current is supplied to the load through GT03 1 from the positive terminal side of the smoothing capacitor 40. When GT03 1 is turned off, the current of G T 0 3 1 flows to the snubber diode · body 3 2 and snubber capacitor 3 3 and charges the snubber capacitor. However, the positioning capacitor 36 is charged at a predetermined voltage; until the charging voltage of the buffer capacitor 3 3 reaches the charging voltage of the positioning capacitor 36, current does not flow to the positioning capacitor 36 side. At this time, since the spike voltage is generated by the parasitic inductance 34 in the snubber circuit, the parasitic inductance 34 in the snubber circuit must be suppressed to the extent that the component specifications are satisfied as described above. Furthermore, when the snubber capacitor 3 3 is charged and when When the charging voltage of the positioning capacitor 36 is exceeded, the positioning capacitor 36 is started to be charged. At this time, the closed circuit formed by the parasitic inductances shown in the figure, the positioning capacitor 36 and the buffer capacitor 33 is used to generate the LC common paper size, which applies the Chinese National Standard (CNS) A4 specification (210X297 mm) __ 457759 A7 B7 V. Description of the invention (27) The vibration is recharged and discharged between the positioning capacitor 36 and the buffer capacitor 33. Since the voltage of the buffer capacitor 3 3 which is changed at this time is also applied to GT03 1, the maximum applied voltage of GT03.1 is determined to be a mode of this LC resonance. The amplitude of the LC resonance is very dependent on the parasitic inductance 为了; in order to suppress the maximum added voltage of GTO 31, the parasitic inductance 値 in this closed loop must be suppressed. In Figure 2 1 (2), since the closed circuit contains a smoothing capacitor 4◦, it is necessary to consider increasing the inductance. For the positioning capacitor shown in (1), it must be charged at a higher voltage than the smoothing capacitor 40; The positioning capacitor shown in Fig. 1 (2) can be charged at a lower voltage than the smoothing capacitor 40. From the viewpoint of the mounted component, the method of Fig. 2 (2) is advantageous. However, since the parasitic inductance tends to be larger than the method of Fig. 21 (1), the present invention is extremely effective when applied to a wiring conductor constituting such a closed circuit. Printed by the Central Bureau of Standards, Ministry of Economic Affairs, 0 Bayer Consumer Cooperative. As such, the present invention is also applicable to semiconductor switching elements that do not directly contain semiconductor switching elements. In particular, when the two ends of the connection point such as the positioning capacitor section are separated and the magnetic flux formed by the reciprocating current is canceled *, the inductance reduction effect is exerted on the wiring conductor that cannot be expected to reduce the parasitic inductance. In the case of disconnecting other semiconductor switching elements, the wiring conductor constituting a closed loop that generates a change in current and determines the maximum applied voltage of the semi-conductor switching element is placed on the projection surface of the thick conductor of the wiring conductor. The overlapping and non-overlapping conductors can reduce the parasitic inductance on the wiring conductors; this result is formed to suppress the maximum added voltage of the semiconductor switching element. At this time, 'To prevent the conductor from being -30- (Please read the precautions on the back before filling in this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210 &gt; &lt; 297 gong) 457 759 Central Ministry of Economic Affairs Printed by the Bureau of Standards, Consumer Engineering Cooperative, A7, B7. 5. Description of the invention (28) Residual charges are generated, so it is possible to fix the wiring conductors at least at one point or other potentials. In order to fix the wiring conductors and conductors, it is also necessary to isolate the edges. can. Embodiment 1 2 A 12th embodiment of the present invention will be described with reference to Figs. Figure 24 is the structure diagram of a 3-level inverter without an anode reactor; GT03 1 a to 31 d; and buffer diodes 32a, 3 2d and buffer capacitor 33a to absorb the surge voltage And 33d are formed by buffer circuits; smoothing capacitors 40a and 40b; and positioning diodes 38a and 38b. The free-rotating diode is omitted in the figure. In addition, the GTO shown in the figure is used as a semiconductor switching element, but any circuit such as I G B T can be used if the di / d t is within the specification without a positive pole U 7. For the wiring between the smoothing capacitor and the semiconductor switching element, set the size of the generated wiring inductance 43a to 43c to L; consider the size of L that can be tolerated when the semiconductor switching element is turned off. At this time, the capacity of the snubber capacitor 3 3 a provided in the snubber circuit is set to C s; the DC input voltages of the smoothing capacitors 4 0a and 4 0 b are each set to V d ·: β and 1 will pass through the semiconductor switching element. The current supplied to the load is set to I. As shown in Figure 2 4 (1), GT031a and 31b are ON. When GTO 3 1 a is turned off, the charging voltage V csi charged to the buffer capacitor 3 3 a is as follows: Means. This paper size applies to Chinese national standards (CNS &gt; A4 size (210X297 mm) -31-(Please read the notes on the back before filling out this page). Order 457759 A7 B7 V. Description of the invention (29) [Number 7

Vcs = Vdc + I (Equation 5 In this case, the current path after disconnection is shown in (2); the energy of the parasitic inductance 4 3a is all formed into the charging voltage of the capacitor. Furthermore, when it is close to the fixed state, the parasitic inductance 4 3 b stores energy, so this component is also added to V.s. In addition, since VC s is added to GT03 1, so the maximum specification voltage of GT03 1 a is set to V π a X, it is necessary to form Satisfy the following formula [Equation 8] 2 L Vmax—V d

C (number nn —-in. ^ 1 II (please read the note-item on the back before filling this page) -'- p order printed by the staff consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Specifically, Vde = 30〇V, Cut-off current I = 6000A, Cs = 3juF-V m. X = 6 Ο Ο Ο v, in order to meet VcsS Vmax, it is formed as LSO. 7 // H. In this way, Vd. In order to ensure the insulation distance Therefore, it is impossible to approach the similar wiring of the DC power supply section. In this case, if the wiring method of the present invention is used, the inductance can be reduced. Of course, it can also be applied to a multi-level inverter with a 2-level inverter as the initial. However, according to the present invention, when Vd (: 23000V and I / Cs is 1 ◦ OA / 1 # F or more, it is to reduce the wiring inductance. This paper applies the Chinese National Standard (CNS) A4 specification (210X297). (%) -32- 4 57 7 5 9 A7 B7 5. The invention description (30) cannot suppress the situation of being added to the semiconductor switching element, and the wiring inductance can be reduced to L which satisfies (number 1). (Please read the precautions on the back before filling out this page) Example 1 3 Explain the 1st 3rd implementation of the present invention according to the 2nd and 5th drawings. Fig. 2.5 is a structure diagram of a 3-level inverter without a buffer circuit: GT031a ~ 31d; and smoothing capacitors 40a and 40b; and positioning diodes 3a and 3b Structure. Free-rotating diodes are omitted in the figure. In addition, G.TO is shown as a semiconductor switching element, but any element such as IGBT can be used.

It is assumed that one of the wiring inductances 4 3 a to 4 3 c parasitic from the wiring between the smoothing capacitor and the semiconductor switching element is L, which is considered to be the allowable level when the semiconductor switching element is turned off. At this time, the DC input voltages of the smoothing capacitors 40a and 40b are each set to Vd. In addition, the maximum slope of the current drop rate when the semiconductor switching element is turned off is set to di / (11 ;; as shown in FIG. 25 (1), 〇1′〇313, 31b is 〇N Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs In the printing state, when G T 0 3 1 a is turned off, the maximum voltage of the voltage added to the buffer capacitor 3 3 a is set to V 1U a X, and the following formula must be satisfied. [Equation 9], Vmax— V dc L- ~ ΓάΊ …… (Number 2)

2-dT is also the same as in Figure 24 after GTO 3 1 is disconnected '-33- This paper size applies Chinese National Standard (CNS) A4 specification (2I0X297 mm) 457759 Central Bureau of Standards, Ministry of Economic Affairs Printed by the consumer cooperative A7 B7 V. Description of the invention (31) Since the energy is stored in the parasitic inductance 4 3 b, the voltage of this component is also added to the semiconductor switching element. Specifically, Vde is 3 000V ′ di / dt = 3 × l010A / S, and is 6000 ′. Since the voltage added to the semiconductor switching element is set to V &lt; naX or less ’, it is formed as LSO. 5 // H. When it is necessary to significantly reduce the inductance in this way, a wiring method for bringing it close to the reciprocating conductor can be realized by using the wiring method of the present invention. Of course, other multi-level inverters using a 2-level inverter as an initial can also be applied. However, according to the present invention, when V "23000V and I / Cs is 1 0 0 0A / 1 // F or more, it is because in the past, the wiring inductance can be reduced to suppress the voltage added to the semiconductor switching element. If it satisfies (number 2), the wiring inductance can be reduced. [Effect of the invention] According to the present invention, the wiring inductance can be reduced and the surge voltage can be suppressed when the arc-extinguishing semiconductor element is turned off. Capacitor capacity can be reduced and losses can be reduced. In addition, in order to cancel magnetic flux with induced current, it has a shielding effect and can reduce magnetic flux leakage to the surrounding area. [Simplified description of the drawing] The first figure shows the invention The wiring conductor of the power converter of the first embodiment. The second figure is a structure in which the second conductor is arranged close to the first conductor. (Please read the precautions on the back before filling this page)

This paper size applies the Chinese National Standard (CNS) A4 specification (210X29? Mm) -34- 457759 Α7 B7 V. Description of the invention (32) Figure 3 shows the inductance caused by the distance between the first conductor and the second conductor Figure of characteristics. (Please read the precautions on the back before filling out this page.) Figure 4 shows the wiring conductor of the power converter according to the second embodiment of the present invention. Fig. 5 shows a structure in which a second conductor is arranged close to the first conductor. Fig. 6 is a diagram showing the inductance characteristics caused by the arrangement method of the first conductor and the second conductor. Fig. 7 shows a power distribution conductor of a third embodiment of the present invention. Fig. 8 is a graph showing the inductance characteristics caused by the arrangement method of the first conductor and the second conductor. Fig. 9 is a wiring conductor of a power converter according to a fourth embodiment of the present invention. Fig. 10 is a wiring conductor arrangement diagram in which the second conductor placed in the opening is close to the first conductor. Printed by Shellfish Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs. Figure 11 shows the relationship between the thickness of the second conductor and the inductance. Fig. 12 is a graph showing the cycle number characteristics of an inductor caused by the arrangement method of the first conductor and the second conductor. Fig. 13 is a wiring conductor showing a power converter according to a fifth embodiment of the present invention. Fig. 14 shows the wiring conductor of the power converter according to the sixth embodiment of the present invention ... Fig. 15 is -35 of the power converter showing the seventh embodiment of the present invention. This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 457759 A7 B7 V. Description of the invention (33) Wiring conductor. Fig. 16 is a wiring conductor mounting diagram showing a method of fixing the first conductor and the second conductor. Fig. 17 is a wiring conductor showing a power converter according to an eighth embodiment of the present invention. Fig. 18 is a wiring conductor showing a power converter according to a ninth embodiment of the present invention. Fig. 19 is a mounting diagram of a snubber circuit according to a tenth embodiment of the present invention. Fig. 20 is a side view showing the mounting of the positioning circuit according to the eleventh embodiment of the present invention. Fig. 21 is a circuit diagram showing a wiring portion that generates a current when a semiconductor switching element is turned off. Fig. 22 is a diagram showing a configuration example of a conventional power converter. Fig. 23 is a diagram for explaining the operation of a conventional buffer circuit and a positioning circuit applied to a self-arc-type semiconductor device. Yin Ben, Staff Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs Figure 24 is a diagram illustrating the circuit operation of the buffer circuit when the self-arc type semiconductor element that does not require an anode reactor is turned off. Fig. 25 is a diagram illustrating the circuit operation when the self-arc-type semiconductor element that does not require a buffer circuit is turned off. Fig. 26 is a diagram showing a conventional wiring installation for reducing inductance. [Illustration of drawing number] -36- (Please read the note on the back first and then fill out this page) This paper size applies to Chinese national standards (CNS &gt; Μ specifications (21〇 &gt; &lt; 297 mm) I IT759 A7 B7 V. Description of the invention (34) 1, 1 1, 1 2: 2, 2 1, 2 2: 3: insulator 4 insulating material 5 conductive bolt 6 insulating bolt 7 spacer 8 insulating spacer center of the Ministry of Economic Affairs Standard Bureau Shell Cooperative 3 1 3 2 3 3 3 4 3 5 3 6 3 7 3 8 3 9 4 0 4 1 4 2 4 3 Sensing 31a to 31d: GTO 32a, 32d: Buffered Diodes 3 3 a, 3 3 d: parasitic inductance in the snubber capacitor buffer circuit, parasitic inductance in the capacitor positioning circuit, 38a, 38b: positioning diode cooling blades 40a, 40b: smoothing capacitor, parasitic inductance in the smoothing circuit, positioning diode parasitic inductance ~ 4 3 c: Parasitic electricity between DC power supply and semiconductor switching element: current direction (from paper surface back side to surface side direction) :: current direction (from paper surface back side to surface side direction) (Please read the precautions on the back side first) (Fill in this page) Samples in this paper (cns) (public ) -37- ¢ 57 759 A7 __B7 V. Description of the invention (35) ο ο ο lx 1 · -1 split phase and phase 1 device 1 machine source ί capacity C moving electrical appliances electric current exchange slip phase flow transfer level reverse transfer (please Please read the notes on the back of Jing first and then fill out this page.) The paper size printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs is in accordance with the Chinese National Standard (CNS) A4 (210X297 mm) -38-

Claims (1)

4 $ 7759 A8 B8 C8 D8 Printed by the Central Operating Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, printed patent application, patent application [Technical Field to which the Invention belongs] The present invention relates to a power converter formed using a semiconductor switching element: especially about Wiring structure that reduces wiring inductance in the power converter circuit. [Advanced Technology] In the past, power converters, such as Japanese Patent Laid-Open No. 3-2 8 9 3 4 6, have the same input and output currents for capacitor terminals and the like, which are the same for absolute current and reverse flow. The current is close to the wiring conductor, which reduces the wiring inductance. This is shown in Figure 26. Since the wiring conductors are arranged close to each of the positive terminal and the negative terminal of the capacitor, a reverse current flows between the wiring conductors, and the effects of mutual magnetic fluxes are cancelled out. [Problems to be Solved by the Invention] For the above-mentioned power converters, it is absolutely necessary that the current flowing in the reverse direction is absolutely the same near the wiring conductors, and it is necessary to ensure that these conditions are ensured. In order to improve the inductance, To reduce the effect, it is necessary to shorten the distance between wiring conductors. However, the reason described below is the case where the current direction is formed in a single direction. For example, the 6-inch GTO (Gate Turn-off) thyristor (hereinafter abbreviated as GTO) released in the market has a specification of 6KV, 6KA or more. Therefore, it must be larger than the previous 4-inch GT. Insulation distance. In addition, with the increase in the capacity of the converter, capacitors have been required to be high (please read the precautions on the back before filling out this page). The paper size is applicable ® National Standard (CNS) A4 (210X 297 mm) ) _ 4-Α8 Β8 C8 D8 Printed by the Consumer Finance Cooperative of the Smart Financial Statements Bureau of the Ministry of Economic Affairs 7759 VI. Scope of Patent Application Annex 1A: No. 8 7 1 0 1 3 1 4 Chinese Patent Application Amendment Scope of the Republic of China 9 Correction in May 0 1. A power converter is a power converter with pin f controlled by semiconductor switching elements to control the load current. Its characteristics ^: It is close to the semiconductor switching elements with power on or off. The first conductor that generates a current change is controlled, and the wiring of the second conductor that generates an induced current in accordance with the current change of the first conductor is arranged in close proximity. 2. A power converter is a power converter for controlling a load current with a semiconductor switching element; it is characterized in that it is close to the first conductor that changes current when the semiconductor switching element is energized or turned off. A second conductor that generates an induced current in response to a change in current of the first conductor is disposed; and the first conductor and the second conductor are conductively connected at one point. 3. A type of power converter is a power converter for controlling the load current with a semiconductor switching element to control the load current; its characteristic article: close to the first The second conductor is arranged with one conductor; the first conductor and the second conductor are conductively connected at one point. 4. A power converter for a converter unit having a first conductor switching element that converts AC to DC, a smoothing capacitor that smoothes the DC, and a DC that is smoothed by the smoothing capacitor and reversed to AC. Power conversion of the second conductor switching element in the inverter section, etc. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm (please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The patent application scope device is characterized in that: the width of the smoothing capacitor is directly or through other components connected to the converter unit or the inverter unit. A part of the 1 conductor or a whole section, which is close to the first conductor and is a second conductor that has a portion that overlaps with a part of the projection plane in the direction of the thick plate of the first conductor and that does not overlap; the first conductor is conductive Connect one point of the second conductor. 5. A power converter for a converter unit having a first conductor switching element that converts AC to DC, and a smoothing capacitor that smoothes the DC, and inverts the DC smoothed by the smoothing capacitor to AC. The power converter of the inverter section of the second semiconductor switching element is characterized in that the #smoothing capacitor is connected directly or via another component to the converter section or the wide section of the inverter section. A part or the entire section of the 1 conductor overlaps the projection surface of the first conductor in the direction of the thick plate with a width of 10% to 60% of the first conductor, and is close to the first section. The conductor is a second conductor having the same width as the first conductor; the first conductor is conductively connected to a point of the second conductor. 6. A power converter for a converter unit having a first conductor switching element for converting AC to DC, a smoothing capacitor for smoothing the aforementioned DC, and an AC inverter smoothed by the aforementioned smoothing ridge device. I-to-DC power converters such as the k-phase device of the second semiconductor switching element; its characteristics are: This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -2- (Please read the back (Please fill in this page again) ABCD 45775 © VI. Patent Application Park (please read the precautions before filling this page) Connect the smoothing capacitor to the converter section or inverter section directly or through other components, and the current Part of the two wide first conductors arranged in parallel so as to cancel the magnetic flux in the opposite direction is a whole section, and a part of the projection surface disposed close to the first conductor and projecting in the direction of the thick plate of the first conductor has a part. At least one second conductor in an overlapping and partially non-overlapping portion: a point where the first conductor is conductively connected to the second conductor. 7. A power converter for a converter unit having a first conductor switching element that converts AC to DC, and a smoothing capacitor that smoothes the DC, and inverts the DC smoothed by the smoothing capacitor to AC. The second semiconductor switching element is an electric power converter such as an inverter portion of an inverter, and is characterized in that: when the semiconductor switching element is disconnected or operated, a first conductor having a wide current change is generated. A part 4 or a full section of the first conductor is disposed in close proximity to the second conductor having a portion that overlaps and does not overlap with the projection direction of the thick-plate direction clothing of the first conductor, and the first conductor is conductively connected to the second conductor. . Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 8. If the power converter in any one of the scope of patent application 1, 2, 3, 4, 5, 6, or 7 is applied, the DC input voltage V d ^ is 3 KV And the ratio I s / C s of the cut-off current I s of the semiconductor switching element with the specification voltage V ma X to the buffer capacitor capacity C s that absorbs the surge voltage of the aforementioned semiconductor switching element is 1 KA / 1 ν F or more Power i converter; It is characterized by the ratio of the wiring inductance L between the DC power supply and the aforementioned Φ-conductor switching element to the aforementioned buffer capacitor capacity C s, which meets the following paper standards. The Chinese standard (CNS &gt; A4 specification ( 210X297 mm)-3-I.457759 --------------- 6. Relation of scope of patent application, I 2 L _ Vmax— V d cy ~ cT = Π ― Call. 9 If the scope of patent application The power converter of any one of items 1, 2, 3, 4, 5, 6, or 7 is a semiconductor switching element having a specified voltage Vraax and a maximum slope of the current drop rate at the time of cut off, di / dt, and a direct current Power converter with input voltage Vde above 3 KV; Between the wiring inductance element L, the relationship satisfies the following formula, Vmax- V d c 2 d i d t ί Read back surface of the matters noted and then fill the page) Ordered by the Ministry of Economy ’s smart money is printed by the Bureau ’s Consumer Cooperatives. If the power converter in any of the scope of application for patents 1 to 'f', where the shortest distance between the aforementioned second conductor and the aforementioned first conductor is 3 mm the following. 1 1. The power converter according to any one of claims 1, 2, 3, 4, 6 or 7 in which the projection plane in the direction of the thick conductor of the first conductor overlaps the second conductor The width of the conductor is more than 10% of the width of the first conductor. 1 2 .. The power converter according to any one of claims 1 to 7 in the scope of the patent application, wherein the width of the projection plane in the direction of the first conductor of the first conductor that does not overlap with the second conductor is 1 conductor width is more than 1/2. This paper size uses Chinese National Standard (CNS) A4 specification (210X297 mm)-4-457759 A8 B8 C8 D8 VI. Application for patent scope 1 3 _If any of the patent scope 1 to 7 for power conversion The thickness of the second conductor is f mm or more. (Please read the precautions on the back before filling out this page) 1 4. If the power converter in any of the items 1 to 7 of the scope of patent application 'wherein the thickness of the aforementioned second conductor,' is greater than the thickness of the aforementioned first conductor i is thin. 15 The power converter according to any one of claims 1 to ^ in the patent application range, wherein the second conductor is a projection plane in the direction of the thick plate of the first conductor, has a part of overlap and is bent to the first One end of one conductor in the width direction of the plate. 16. The power converter according to any one of claims 1 to 7, wherein the aforementioned second conductor is provided with 1 and 1 openings. 17. The power converter according to any one of claims 1 to jr of the scope of patent application, wherein the aforementioned second conductor and the first conductor + are fixed through an insulator. i 1 8. The power converter according to item 17 of the scope of patent application, wherein the second conductor and the first conductor are fixed by a conductive connection means and an insulating connection means. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 19. A power converter is designed to cut off the current Is of semiconductor switching elements with a DC input voltage Vdc of 3 KV or more and a voltage of VmaK and absorb the aforementioned semiconductor switch redundant parts The ratio of the buffer capacitor capacity Cs of the surge voltage Is / Cs is a power converter above iKA / lyF; the ratio of the wiring inductance L between the DC power supply and the aforementioned semiconducting ^ switching element to the aforementioned buffer capacitor capacity C $ satisfies The following formula. This paper size applies to China National Standard (CNS) A4 (210X297 mm) -5-S 7 7 5- 4 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application scope of patents I 2 L 1 Vmax— V dcj 1 I-1 o 2 0 · A power converter for a semiconductor switching element with a specified voltage and a maximum slope of the current drop rate at the time of cut off, di / dt, and a current input voltage vd. Power of 3 KV or more Converter; the wiring inductance L between the DC power supply and the aforementioned semiconductor switching element satisfies the following formula: .. Vmax— V dc 2 1 · — An electrical device, which is an electrical device that uses a semiconductor switching element to control the load current: proximity A second conductor that generates a current due to a change in the current of the first conductor is disposed on the first conductor that generates a change in current when the semiconductor switching element is turned on or off; 1 conductor and the aforementioned second conductor. 2 2. The electric device according to item 21 of the scope of patent application, wherein the projection plane in the direction of the thick plate of the aforementioned first conductor and The width of the overlap of the second conductor is more than 10% of the width of the first conductor. 2 3. For the electrical equipment of the scope of the patent application No. 21 or 22, wherein the second conductor and the first conductor system It is fixed for the insulation through the insulator. 2 4. If the electrical equipment of the scope of application for the patent No. 21 or 22, wherein the second conductor and the first guide system are fixed through the insulator, the paper size applies. China National Standards &lt; CNS &gt; A4 Specification (210X297) -6- (Please read the precautions on the back before filling this page) S7 7 59 A8 B8 C8 D8 6. The scope of patent application is determined. 2 Preparation of the second smoothing of the aforementioned smooth electric power in the thick section of the entire section. 5-A connection circuit structure of a smooth DC inverting AC converter that converts electricity to DC DC, close to the front projection. 2 conductors, the first method of manufacturing the first capacitor current of the body ’s power conversion method, the first part of the component, the manufacture of the device with a fixed converter, the P ′ method, the 1 conductor switch exemption, and the previous 2 semiconductors_off ， It is for the inverter section with the converter section, and the inverter section for flat capacitors, etc .: It is characterized by: a part of the wide first conductor or a conductor is arranged for the first conductor Some overlapped but not overlapped: Conductive flail is printed by the aforementioned first conductor and the aforementioned manufacturing method. The Ministry of Economic Affairs, Intellectual Property Bureau, Employees' Cooperatives and Cooperatives printed this paper to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) -7. --5. (Please read the notes on the back before filling this page)