44555 9 五、發明說明（l) 本發明係一種可利用高週波進行半導體銲接之方法 ，其係利用高週波瞬間加熱的特點，令—般半導體封裝 在使用有受到溫度限制的基材，均能順利進行 不至於使基板受到破壞。44555 9 V. Description of the invention (l) The present invention is a method for semiconductor welding using high frequency, which uses the characteristics of high frequency instantaneous heating, so that general semiconductor packages can be used on substrates with temperature restrictions. Smooth progress will not damage the substrate.
按，一般在半導體封裝的銲接製程中，大抵上皆是 利用銲接爐配合銲接冶工具來進行銲接，因此’在半導 體材料的選用上，必須採用高耐溫及熱傳導性良好的材 料，相對地，提兩了材料成本，在高量產的半導體業中 ，生產成本的高低與否，一直是新產品在推出市場後， 是否具有競♦性的主要關鍵，因此，如何在該半導體封 裝銲接製程上，使材料受到溫度的限制有所突破，同時 降低該材料於選用的成本，亦形成半導體業界之一大課 題。 目前已申請專利之半導體結構繁多，如公告號2 3 4 1 9 9號「玻璃纖維強化樹脂片型半導體二極管之製 造方法」’請參閱第一囷’以此結構而言若以MUTS_ UBISHI CCL-HL82 0印刷電路板作為上下夾合的基板1 、f，該基板1、2與晶片3間係用高溫錫膏4做為導接 愫=溫錫膏4的熔點溫度若在2 68它，以傳統利用銲接 進行銲接的製程’銲接爐爐内的實際溫度至少要 辉^ C以上的溫度’才有可能使高溫錫膏4熔融，達到 $的效果’但是CCL_HL820基板在MUTSUBISHI的 性1則資料上記載’其耐熱性為260 °C，30分鐘，抗銲 為3 5 〇 ’ 3 0秒鐘’因此，若以傳統的銲接方式Generally speaking, in the welding process of semiconductor packages, welding furnaces and welding tools are generally used for welding. Therefore, in the selection of semiconductor materials, materials with high temperature resistance and good thermal conductivity must be used. The cost of materials has been mentioned. In the high-volume semiconductor industry, the level of production costs has always been the main key to the competitiveness of new products after they are launched on the market. Therefore, how to use this semiconductor packaging soldering process The breakthrough of the temperature limitation of the material, while reducing the cost of the material selection, has also formed a major issue in the semiconductor industry. There are many semiconductor structures that have applied for patents at present, such as Announcement No. 2 3 4 1 9 9 "Manufacturing Method of Glass Fiber Reinforced Resin Chip Semiconductor Diodes" 'Please refer to the first'. For this structure, if MUTS_ UBISHI CCL- HL82 0 printed circuit board is used as the upper and lower substrates 1 and f. The substrates 1 and 2 and the wafer 3 are connected with high temperature solder paste 4 as the lead. Traditionally, the process of welding using welding 'the actual temperature in the welding furnace must be at least ^ C or higher' to make it possible to melt the high-temperature solder paste 4 to achieve the effect of $ '. It states that its heat resistance is 260 ° C for 30 minutes, and the solder resistance is 3 5 0 '30 seconds. Therefore, if the conventional welding method is used,
五、發明說明（2) ，可能使該CCL-HL82 0基板受到破壞。 有鑑於此，假設有一種技術能在極短時間内加熱至 高溫，加熱時間短到不致使該基板破壞，加熱溫度又能 令高溫錫膏4熔融，使得上下基板1、2晶片3順利完成 導接。緣是，本發明人乃特潛心的研究並配合學理的運 用，發現可利用高週波瞬間加熱的原理，便能滿足上述 之條件，此為本案之所以利用高週波加熱原理，作為進 行二極體銲接之技術理由。 高週波加熱常用在機械熱處理，其原理係利用磁 ! i場感應方式，以高週波將導體加熱，主要熱效果的產生 ，是在磁場感應過程中的渦電流及磁滯損失所導致，由 於高週波的加熱原理於一般有探討到高週波的書籍中皆 有詳述，在此不進一步予以贅述。 本發明之一目的在於提供一可利用高週波進行半導 體之銲接製程，由於高週波的磁場感應加熱僅與導體發 生作用，所以當高週波感應線圈與基板上的金屬線路產 生磁場感應後，會在該基板線路上產生局部加熱的效果 ，而使該基板線路的溫度迅速提升，此溫度達到錫膏熔 點時，晶片即與基板完成接合，因該基板線路周圍係非 金屬部分，並沒有被感應加熱，俟銲接完成後，基板線 路上的熱量，易被其周圍非金屬部分散逸，因此，堆積 於基板的熱量，較不易集中在基板的某一部位，使得該 部位的溫度不至於達到基板的破壞溫度，所以可應用在 無法承受長時間在高溫下的封裝材料之生產製程中。5. Description of the invention (2), the CCL-HL82 0 substrate may be damaged. In view of this, it is assumed that there is a technology that can heat to a high temperature in a very short time, the heating time is short enough to not damage the substrate, and the heating temperature can melt the high-temperature solder paste 4 so that the upper and lower substrates 1, 2 and wafer 3 can be successfully guided. Pick up. The reason is that the inventor's intensive research combined with the application of science found that the above-mentioned conditions can be satisfied by using the principle of high-frequency instantaneous heating. This is why this case uses the principle of high-frequency heating as a diode. Technical reasons for welding. High frequency heating is commonly used in mechanical heat treatment. The principle is to use magnetic! I-field induction to heat conductors with high frequency. The main thermal effect is caused by eddy currents and hysteresis losses during magnetic field induction. The principle of Zhou Bo's heating is detailed in books that generally discuss high frequency, and will not be further described here. One object of the present invention is to provide a semiconductor welding process that can utilize high frequency waves. Since high frequency magnetic field induction heating only interacts with conductors, when a high frequency wave induction coil and a metal line on a substrate generate magnetic field induction, The effect of local heating on the substrate circuit causes the temperature of the substrate circuit to rise rapidly. When the temperature reaches the melting point of the solder paste, the wafer is completely bonded to the substrate. Because the non-metal part is surrounded by the substrate circuit, it is not heated by induction. After the welding is completed, the heat on the substrate circuit is easily dissipated by the surrounding non-metallic parts. Therefore, the heat accumulated on the substrate is less likely to be concentrated in a certain part of the substrate, so that the temperature of the part will not reach the destruction of the substrate. Temperature, so it can be used in the production process of packaging materials that can not withstand high temperatures for a long time.
第5頁 -^45559 五、發明說明（3) 本發明之另一目的，在於提供一可利用高週波進行 半導體錄接之方法’由於其係利用高週波於瞬間加熱之 特點來進行二極體銲接技術，因此’不會使其上塗佈有 銲料及放設晶片於内層線路之基板’於銲接的製程中受 到破壞。 較佳實施例 請參閱第二及第三圖所示’其係將已完成線路製作 之上、下基板1、2’利用網印方式在該上、下基板1、2 之内層線路1卜21印上錫膏4 ，且在該下基板2已印錫 膏4之内層線路21之部位上放設晶片3 ，並將該上、下 基板1、2相對結合’然後’進行本案所提到的方法，利 用高週波加熱法銲接，如下述。 請參閱第四及第五圖所示，其係將上、下已結合的 基板1、2，利用輸送帶或其他傳送裝置（圖中未示），以 一固定速度向高週波感應線圈5移動’由於該高週波感 應線圈5有通以電流，因此，當該基板之第一列線路通 過高週波感應線圈5時，會依電磁感應定律，在上基板 1之表面線路12感應出與線圈電流反方向的電流，而週 波數愈高時，此電流愈成渦電流，以歐姆定律的電熱效 果發生焦耳熱，此時，該基板之第一列線路的溫度迅速 提升，若該溫度達到錫旁4的炼點時’晶片3與上、下 暴板1、2便完成導接，同時，該基板持續以一定速度移 動，造成該基板之第一列線路逐漸遠離高週波感應線圈 5 ，相對地’其感應的渦電流愈來愈小’溫度不再升高Page 5- ^ 45559 V. Description of the invention (3) Another object of the present invention is to provide a method for semiconductor recording using high frequency. 'Because it uses high frequency for instantaneous heating to perform diodes Welding technology, so 'the substrate coated with solder and placing the wafer on the inner layer circuit' will not be damaged during the welding process. For a preferred embodiment, please refer to the second and third figures, which show that the upper and lower substrates 1 and 2 of the completed circuit are fabricated by screen printing on the inner and outer circuits 1 and 21 of the upper and lower substrates 1 and 2. The solder paste 4 is printed, and the wafer 3 is placed on the lower substrate 2 where the inner layer circuit 21 of the solder paste 4 has been printed, and the upper and lower substrates 1 and 2 are relatively bonded, and then the above-mentioned steps are performed. Method: Welding by high frequency heating method is as follows. Please refer to the fourth and fifth figures, which are used to move the upper and lower combined substrates 1 and 2 to the high frequency induction coil 5 at a fixed speed by using a conveyor belt or other conveying devices (not shown). 'Because the high-frequency induction coil 5 is energized, when the first line of the substrate passes through the high-frequency induction coil 5, it will induce a coil current on the surface line 12 of the upper substrate 1 according to the law of electromagnetic induction. The current in the opposite direction, and the higher the number of cycles, the more this current becomes an eddy current, and Joule heating occurs with the electric heating effect of Ohm's Law. At this time, the temperature of the first line of the substrate rapidly increases. If the temperature reaches the side of the tin, At the refining point of 4, the connection between the wafer 3 and the upper and lower storm plates 1 and 2 is completed. At the same time, the substrate continues to move at a certain speed, causing the first line of the substrate to gradually move away from the high-frequency induction coil 5 and relatively 'The eddy current it induces is getting smaller' and the temperature no longer rises
4 5 5 5 9 五、發明說明（4) ，經空氣自然冷卻’溫度逐漸降低’使得該基板不會因 溫度過高而受到破壞。倘若欲使該溫度迅速冷卻’亦可 於該基板通過該高週波感應線圈5之出口處’加以氣冷 、水冷或其他能令該基板散熱較快之冷卻裝置’另—方 面，當該基板的第二列線路通過高週波感應線圈5時， 亦感應出渦電流，致該第二列線路溫度迅速提升，而達 到銲接的效果，以此類推，當該基板完全通過高週波感 應線圈5後，即完成銲接的製程。 另，本發明之基板可為印刷電路板、導線架、陶究 板或其他能承載該晶片3之任一載體；該錫膏4亦可用 錫球、銲片或其他可使該晶片3與基板經加熱處理接合 之任一材料。 此外，本發明之高週波感應線圈5可製作成任一符 合製程所需之形狀，不限於單一感應線圈，亦可採用二 個以上的高週波感應線圈，而基板通過高週波感應線圈 5的方向’並不限於由高週波感應線圈5的上方或下方 通過’甚至可由該高週波感應線圈5的中間通過，如第 六圖A — C所示。 綜上所述’透過本發明利用高週波加熱迅速的特點 ’能使一般半導體於封裝製程中，在使用有受到溫度限 制的基材，能夠順利進行銲接，不致使該基板受到破壞 。是以，本發明之專利申請符合發明要件，爰依專利法 提出申請之，請詳查並准予本案，以保障發明者之權益 ’若鈞局之貴審查委員有任何的稽疑，請不吝來函指4 5 5 5 9 V. Description of the invention (4), the temperature is gradually lowered by air cooling, so that the substrate will not be damaged due to excessive temperature. If the temperature is to be rapidly cooled, 'the substrate can also be air-cooled, water-cooled, or other cooling device capable of dissipating heat more quickly at the substrate through the exit of the high-frequency induction coil 5'. In addition, when the substrate's When the second line of lines passes through the high frequency induction coil 5, the eddy current is also induced, which causes the temperature of the second line of lines to rise rapidly to achieve the effect of welding, and so on. When the substrate completely passes the high frequency induction coil 5, The welding process is completed. In addition, the substrate of the present invention may be a printed circuit board, a lead frame, a ceramic board, or any other carrier capable of carrying the wafer 3; the solder paste 4 may also be used with a solder ball, a soldering pad, or other means that enables the wafer 3 and the substrate Any material joined by heat treatment. In addition, the high-frequency induction coil 5 of the present invention can be made into any shape that meets the requirements of the manufacturing process, and is not limited to a single induction coil. Two or more high-frequency induction coils can also be used, and the substrate passes the direction of the high-frequency induction coil 5 'It is not limited to passing above or below the high-frequency induction coil 5' or even the middle of the high-frequency induction coil 5, as shown in the sixth figures A to C. In summary, ‘the use of the characteristics of rapid high-frequency heating through the present invention’ enables general semiconductors to be successfully soldered in a packaging process using a temperature-limited substrate without damaging the substrate. Therefore, the patent application of the present invention complies with the requirements of the invention. If the application is filed in accordance with the Patent Law, please check and approve the case in detail to protect the rights and interests of the inventor. Means
445559 五、發明說明（5) 示。 按，以上所述，僅為本發明的最佳之一具體實施例 ，惟本發明之方法特徵並不侷限於此，任何熟悉該項技 藝者在本發明之領域内，可輕易思及之變化或修飾皆可 涵蓋在以下本案之專利範圍，如在半導體封裝（如二極 體、1C、LED ...等），若有利用本案所述之方式進行 銲接的製程，皆含蓋在本案之範疇。445559 V. Description of the invention (5). According to the above, it is only one of the best specific embodiments of the present invention, but the method features of the present invention are not limited to this. Anyone skilled in the art can easily consider the changes in the field of the present invention. Or the modifications can be covered by the following patents in this case. For example, in semiconductor packaging (such as diodes, 1C, LED, etc.), if there is a welding process using the method described in this case, all are covered in this case. category.
445559 圖式簡單說明 4 一圖係公告號2 3 4 1 9 9號之結構剖視圖。 二圖係本發明之上、下基板與晶片、銲料進行組 立之示意圖。 第三圖係第二圖之組合圖。 1四圖A — C係本發明之實施例立體圖。 /第五圖A — E係本發明之實施例側視圖。 /第六圖A — C係本發明另一實施例圖。 圖號與名稱說明 1上基板 11 内層線路 12 表面線路 2下基板 21 内層線路 3 晶片 4錫膏 5南週波感應線圈445559 Brief Description of Drawings 4 A drawing is a sectional view of the structure of bulletin No. 2 3 4 1 9 9. The second figure is a schematic diagram of the assembly of the upper and lower substrates, the wafer, and the solder of the present invention. The third picture is a combination diagram of the second picture. Fig. 14 is a perspective view of an embodiment of the present invention. / Fifth Figure A-E is a side view of an embodiment of the present invention. / Sixth diagram A-C is a diagram of another embodiment of the present invention. Description of drawing number and name 1 upper substrate 11 inner layer circuit 12 surface circuit 2 lower substrate 21 inner layer circuit 3 wafer 4 solder paste 5 south frequency induction coil
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