4443 4 5 五、發明說明（1) 本發明係有關於一種半導體積體電路的製造流程’特 別是有關於一種雙鎮嵌（dual damascene)、结構的氣作方、 法’藉由在導入新穎的光阻圖案清除方法，而簡化製程並 且提南良率。 以下利用第1圖所示的雙鑲嵌結構的製作流程圖’以 說明習知技術。習知雙鎮敌結構製作方法之步驟為形成 第1光阻->RIE接觸孔蝕刻—{高壓電漿清除第1光阻—渔式 清除第1光阻}—形成底部防反射層/第2光阻—RIE溝槽姓 刻—{高壓電漿清除底部防反射層/第2光阻—溼式清除底 部防反射層/第2光阻}。 τ 上述雙銀嵌結構製作流程之中，需要利用高壓 (2〜3torr)電漿機台’亦即所謂d〇wn stream stripper機 台’進行第1階段清除第1或2光阻，再將晶圓移至清洗 槽，以例如含有胺基的試劑進行第2階段溼式清洗，上述 兩階段清除方式不但過程繁雜，而且容易破壞金屬導線 (例如銅）以及金屬間介電層，甚至影響雙鑲嵌結構之輪廓 的完整性。 有鑑於上述各習知技術的問題，本發明的目的在於提 供一種雙鑲彼結搆的製作方法，藉由在製程中導入新穎的 光阻圊案清除方法’而簡化製程並且解決習知技術的問 了 題。 根據上述目的，本發明提供一種雙鑲嵌結構的製作方 法，適用於具有金屬導線的半導體基底，上述方法包括下 列步驟.（a)在上述半導體基底上方依序形成一第1介電4443 4 5 V. Description of the invention (1) The present invention relates to the manufacturing process of a semiconductor integrated circuit 'especially to a dual damascene, a structured method and method of structure' by introducing novelty Photoresist pattern removal method, while simplifying the process and improving the yield. Hereinafter, a conventional manufacturing technique will be described using the flow chart of manufacturing a dual mosaic structure shown in FIG. 1. The steps of the conventional manufacturing method of the dual-town enemy structure are to form the first photoresist-> RIE contact hole etching-{high-voltage plasma removal of the first photoresist-fishing-type removal of the first photoresist}-formation of the bottom anti-reflection layer / 2nd photoresistor — RIE trench name engraved — {High-voltage plasma to remove bottom anti-reflection layer / 2nd photoresistor — wet-type to remove bottom anti-reflection layer / 2nd photoresistor}. τ In the above-mentioned double silver embedded structure manufacturing process, a high-voltage (2 ~ 3torr) plasma machine 'also known as a down stream stripper machine' is used to clear the first or second photoresist in the first stage, and then the crystal Move to the cleaning tank and perform the second-stage wet cleaning with, for example, an amine-based reagent. The two-stage cleaning method is not only complicated, but also easily damages the metal wires (such as copper) and the intermetal dielectric layer, and even affects the dual damascene. Structural integrity of the outline. In view of the problems of the above-mentioned conventional technologies, an object of the present invention is to provide a manufacturing method of a dual mosaic structure, which can simplify the manufacturing process and solve the problems of the conventional technology by introducing a novel photoresist solution removal method into the manufacturing process. The problem. According to the above object, the present invention provides a method for manufacturing a dual damascene structure, which is suitable for a semiconductor substrate having a metal wire. The method includes the following steps. (A) A first dielectric is sequentially formed over the semiconductor substrate.
第6頁 ^443 45 五、發明說明（2) 層、一第1蝕刻停止層、第2介電層、第2蝕刻停止層、一 具有第1開口的第1光阻圖案；（b )利用反應式離子蝕刻方 式（R I E )，經由上述第1開口蝕刻該第2蝕刻停止層、該第2 介電層、該第1蝕刻停止層及該第1介電層，以在上述金屬 導線相對位置形成一接觸孔；（c)利用反應式離子触刻方 式清除上述第1光阻圖案；（d)在上述接觸孔内部填入有機 底部防反射層，且形成具有第2開口的第2光阻圖案；（e) 利用反應式離子蝕刻方式（RIE )，經由上述第2開口蝕刻該 第2蝕刻停止層及該第2介電層，直到露出上述第1蝕刻停 止層為止’以形成一溝槽；以及（f )利用反應式離子蝕刻 方式清除該有機底部防反射層及第2光阻圖案，而完成雙 鎮嵌·結構。 上述雙鑲嵌結構的製作方法，其中該第1、2介電層係 由多孔性二氧化矽或低介電常數材料構成。該第1、2蝕刻 停止層係由氮化矽或氮氧矽化物構成。而上述第I、2光阻 圖案係由有機聚合物材料構成。 再者，形成該第1介電層之前更包括形成一氮化矽阻 擋層的步驟》並且上述步驟（b)、（c)及（e)、（〇在同一機 台完成。 並且，步驟（c)、（f)清除第1、2光阻圖案及有機底部 防反射層係採用氮氣/氧氣為清洗反應氣體，且視需要亦 可增加氮氣/氫氣為清洗反應氣體。 根據上述目的，本發明提供另一種接觸孔或溝槽的製 作方法，適用於形成有介電層的半導體基底，在上述介電Page 6 ^ 443 45 V. Description of the invention (2) layer, a first etch stop layer, a second dielectric layer, a second etch stop layer, a first photoresist pattern having a first opening; (b) utilization The reactive ion etching method (RIE) etches the second etch stop layer, the second dielectric layer, the first etch stop layer, and the first dielectric layer through the first openings to position the metal wires in a relative position. Forming a contact hole; (c) removing the first photoresist pattern by using a reactive ion touch engraving method; (d) filling an organic bottom anti-reflection layer inside the contact hole, and forming a second photoresist having a second opening Pattern; (e) using reactive ion etching (RIE) to etch the second etch stop layer and the second dielectric layer through the second opening until the first etch stop layer is exposed to form a trench And (f) removing the organic bottom anti-reflection layer and the second photoresist pattern by using a reactive ion etching method to complete a double-embedding structure. In the manufacturing method of the dual damascene structure, the first and second dielectric layers are made of porous silicon dioxide or a low dielectric constant material. The first and second etch stop layers are made of silicon nitride or siloxynitride. The first and second photoresist patterns are made of an organic polymer material. Furthermore, before forming the first dielectric layer, a step of forming a silicon nitride barrier layer is further included, and the above steps (b), (c), (e), and (〇) are completed on the same machine. Moreover, the step ( c), (f) The first and second photoresist patterns and the organic bottom anti-reflection layer are removed by using nitrogen / oxygen as the cleaning reaction gas, and if necessary, nitrogen / hydrogen may be added as the cleaning reaction gas. According to the above object, the present invention Provided is another method for manufacturing a contact hole or a trench, which is suitable for a semiconductor substrate formed with a dielectric layer.
4 443 4 5 五、發明說明（3) 層的既定位置形成具有開口的光阻圖案；在反應性離子钱 刻機台内經由上述開口蝕刻上述介電層，以形成接觸孔或 溝槽：以及在上述反應性離子蝕刻機台内清除上述光阻圖 案。 為了讓本發明之上述目的、特徵、和優點能更明顯易 懂’下文特舉一較佳實施例，並配合所附圖式’作詳細說 明如下： 圖式之簡單說明： 第1圊係習知技術之雙鑲嵌結構的製作流程圖。 第2圖係本發明實施例之雙鑲嵌結構的製作流程圖。 〆 第3A〜3D圖為根據本發明實施例之雙鑲嵌結構的製程 剖面示意圖。 符號之說明 100〜半導體（矽）基底；1〇2〜金屬導線；10[阻擋層； 106〜第1介電層；1〇8〜第1蝕刻停止層；11〇~第2介電層； 11 2〜第2蝕刻停止層；11 4〜第1光阻圖案（用於蝕刻接觸 孔）；116〜第1開口； 118~接觸孔；120〜底部防反射層 (BARC) ;122〜第2光阻圖案；124〜第2開口； 126〜溝槽； DD~雙鑲嵌結構。 實施例 广 以下利用第3 A 第30圖所示之雙鑲嵌結構的製程剖面 圖，以更詳細地說明本發明。 首先，請參照第3 A圖’該圖顯示例如單晶石夕之半導體 基底100，其已形成若干圖未顯示的半導艘積艘電路。符4 443 4 5 V. Description of the invention (3) A photoresist pattern with an opening is formed at a predetermined position of the layer; the dielectric layer is etched through the opening in the reactive ion money engraving machine to form a contact hole or trench: and The photoresist pattern is removed in the reactive ion etching machine. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, "a preferred embodiment is given below in conjunction with the accompanying drawings" is described in detail as follows: Brief description of the drawings: Section 1 The manufacturing flow chart of the double mosaic structure of the known technology. FIG. 2 is a manufacturing flowchart of a dual mosaic structure according to an embodiment of the present invention. 〆 Figures 3A to 3D are schematic cross-sectional views of the manufacturing process of the dual mosaic structure according to the embodiment of the present invention. Explanation of symbols: 100 ~ semiconductor (silicon) substrate; 102 ~ metal wire; 10 [barrier layer; 106 ~ first dielectric layer; 108 ~ first etch stop layer; 110 ~ second dielectric layer; 11 2 to 2nd etch stop layer; 11 4 to 1st photoresist pattern (for etching contact holes); 116 to 1st opening; 118 to contact holes; 120 to bottom anti-reflection layer (BARC); 122 to 2nd Photoresist pattern; 124 to 2nd opening; 126 to trench; DD to double damascene structure. EXAMPLES The following is a detailed process cross-sectional view of the dual mosaic structure shown in Figs. 3A to 30 to explain the present invention in more detail. First, please refer to FIG. 3A ', which shows, for example, a semiconductor substrate 100 of a single crystal slab, which has formed a number of semiconducting shipbuilding circuits not shown in the figure. symbol
444345 五、發明說明（4) 號102為例如銅金屬（Cu)等材料構成的金屬導線；符就ι〇4 為例如氤化矽材料構成的阻擋層，用來保護下層之金屬導 線102。符號1〇6及110為金屬間介電層，例如由多孔性二 氧化矽或低介電常數材料構成，符號108、112則例如為i 化矽或氮氡矽化物構成之蝕刻停止層。符號11 4為利用傳 統微影技術形成的光p且圖案，其在欲形成接觸孔的位置具 有一開口 11 6。 ' 在蝕刻停止層112上方形成光阻圖案114之後，利用導 入適當的蚀刻氣艘的反應性離子蚀刻（reactive ion etching ;RIE)機台，依序進行蝕刻停止層112、金屬間介 電層Π 0、蝕刻停止層1 〇8、金屬間介電層1 〇6的蝕刻，以 形成如第3B圖所示的接觸孔118。緊接著，在反應性離子 姓刻機台的另一反應室之中，進行光阻圖案114的乾式清 除’此時例如採用壓力1 〇〇mtorr/功率500W/氧氣流量 20sccm/氮氣流量i〇sccm的操作條件來進行。再者，可視 需要再選用氮氣/氫氣等氣體加以處理，以確保光阻圖案 1 14完全地去除》 八 然後’請參照第3C圖，利用旋塗方式將底部防反射層 120(bottom anti-reflection coating :BARC)填入上述 接觸孔118的底部並且形成於蝕刻停止層112表面此底部 防反射層120的材料類似光阻圖案的有機聚合物，其目的 在於後續钱刻溝槽的過程之中保護金屬導線1〇2。其次， 利用傳統的微影技術形成具有開口丨24的光阻圖案μ?。接 著，利用導入適當的蝕刻氣體的反應性離子蝕刻機台依444345 V. Description of the invention (4) No. 102 is a metal wire made of a material such as copper metal (Cu); Fu Wei 04 is a barrier layer made of a silicon oxide material, for example, to protect the underlying metal wire 102. Symbols 106 and 110 are intermetallic dielectric layers, for example, composed of porous silicon dioxide or a low dielectric constant material, and symbols 108 and 112 are, for example, etch-stop layers composed of silicon nitride or silicon nitride. Reference numeral 11 4 is a light p-shaped pattern formed by a conventional lithography technique, and has an opening 116 at a position where a contact hole is to be formed. '' After the photoresist pattern 114 is formed over the etch stop layer 112, the etch stop layer 112 and the intermetal dielectric layer are sequentially performed using a reactive ion etching (RIE) machine that introduces an appropriate etching gas vessel. 0. Etching of the etch stop layer 108 and the intermetal dielectric layer 106 to form a contact hole 118 as shown in FIG. 3B. Next, in the other reaction chamber of the reactive ion engraving machine, dry removal of the photoresist pattern 114 is performed. At this time, for example, a pressure of 100 mtorr / power 500 W / oxygen flow rate 20 sccm / nitrogen flow rate i 0 sccm is used. Operating conditions. Furthermore, if necessary, a gas such as nitrogen / hydrogen may be used for processing to ensure that the photoresist pattern 1 14 is completely removed. Then, please refer to FIG. 3C, and apply a bottom anti-reflection layer 120 by spin coating. coating: BARC) is filled into the bottom of the contact hole 118 and is formed on the surface of the etch stop layer 112. The material of the bottom anti-reflection layer 120 is similar to a photoresist patterned organic polymer. Its purpose is to protect the subsequent process of engraving the trench. Metal wire 102. Secondly, a conventional photolithography technique is used to form a photoresist pattern μ with openings 24. Next, a reactive ion etching machine that introduces an appropriate etching gas is used.
第9頁 444345 五、發明說明（5) 序進行底部防反射層1 2 0、蝕刻停止層1 1 2、金屬間介電層 11 0的蝕刻，直到露出蝕刻停止層1 0 8為止，以形成如第3D 圖所示的溝槽126，其與接觸孔118構成雙鑲嵌結構DD。緊 接著，在反應性離子触刻機台的另一反應室之中，進行光 阻圖案122的乾式清除，並且同時去除阻擋層1〇4，此時例 如採用壓力lOOmtorr/功率500W/氧氣流量20sccm/氮氣流 量1 Osccm的操作條件來進行。再者，可視需要再選用氮氣 /氫氣等氣體加以處理，以確保光阻圖案114完全地去除。 以下利用第2圖所示的雙鑲嵌結構的製作流程圖，再 一次簡要地說明本發明’其步驟為：形成第1光阻— 接 觸孔餘刻—RIE清除第1光阻形成底部防反射層/第2光阻 〜RIE溝槽蝕刻—RIE清除底部防反射層/第2光阻。 發明特徵與效果 本發明藉由在製程中導入新穎的光阻圖案清除方法， 方即在反應式離子蚀刻機台完成姓刻介電層與清除光阻圖 案的步称’而簡化製程（不需溼式清除步驟），並且此種非 等向性清除方式，不易破壞金屬導線及金屬間介電層，且 可確保雙鑲嵌結構的輪廓，而達到提高良率的效果。Page 9 444345 V. Description of the invention (5) The bottom anti-reflection layer 1 2 0, the etch stop layer 1 1 2, and the intermetal dielectric layer 11 0 are sequentially etched until the etch stop layer 1 8 is exposed to form As shown in FIG. 3D, the trench 126 and the contact hole 118 form a dual damascene structure DD. Next, in another reaction chamber of the reactive ion touch engraving machine, dry-removing the photoresist pattern 122 and removing the barrier layer 104 at the same time, for example, using a pressure of 100 mtorr / power 500 W / oxygen flow rate 20 sccm / Nitrogen flow rate 1 Osccm operating conditions. Moreover, if necessary, a gas such as nitrogen / hydrogen may be used for processing to ensure that the photoresist pattern 114 is completely removed. The following uses the manufacturing flow chart of the dual damascene structure shown in FIG. 2 to briefly explain the present invention again. The steps are: forming the first photoresistor—the contact hole is etched away—RIE removing the first photoresist to form a bottom anti-reflection layer. / Second photoresist ~ RIE trench etch-RIE removes the bottom anti-reflection layer / second photoresist. Features and Effects of the Invention The present invention simplifies the manufacturing process by introducing a novel photoresist pattern removal method into the manufacturing process, that is, the step of etching the dielectric layer and removing the photoresist pattern is completed in a reactive ion etching machine. Wet removal step), and this non-isotropic removal method is not easy to damage the metal wires and the intermetal dielectric layer, and can ensure the contour of the dual mosaic structure to achieve the effect of improving the yield.
_ 再者’根據本發明的製作方法，清除光阻圖案122的 同時亦可去除阻播層1〇4，而露出欲接觸的金屬導線I。〗 雖然本發明已以較佳實施例揭露如上，然其並非用』 限定^發明，任何熟習此項技藝者，在不脫離本發明之_ 珅和範圍内，當可作更動與潤飾，因此本發明之保護範{ 當視後附之申請專利範圍所界定者為準。_ Furthermore, according to the manufacturing method of the present invention, the photoresist pattern 122 can be removed at the same time as the photoresist layer 104 is removed, and the metal wire I to be exposed is exposed. 〖Although the present invention has been disclosed as above in the preferred embodiment, it is not used to limit the invention. Any person skilled in the art can make changes and decorations without departing from the scope of the present invention. The scope of protection of the invention {shall be determined by the scope of the attached patent application.