t 442 33 9 五、發明规明（l) 【發明之範圍】 本發明係有關於一種晶 J·特別係一種應用於清洗光 一furic Peroxide Mixture 氮溶液的補充方法。 【發明之背景】 在半導體晶圓的製程當 相當重要的一個課題，然而 與複雜的發展，用於清洗晶 潔能力，才能因應縮小元件 洗程度的增加。除此之外， 的地位，以下便對習知晶圓 的方法提出說明》 請參照「第1圏」，其 禾意圓’主要包括有一處理 1 0的底部藉由一管路連接 管路的流通：另有一硫酸預 决定是否進行溶液的補充； 之間亦連接有一管路1 8， 斷循環，即外槽1 2的清洗 的底部輸送至處理槽1 〇， 至外槽12，使處理槽1〇 此不但能有助於清洗置放於 )，更能於清洗液循環過程 圓 清 洗 槽 之 清 洗 液 補 充 方 法， 阻 之 硫 酸 過 氧 ,化 氫 混 合 (Sul 1 S P Μ ) 槽 之 硫 酸 / 過 軋化 中 ， 如 何 減 少 晶 圓 受 到 污 染是 » 隨 著 最 终 產 品 元 件 愈趨 縮小 圓 的 設 備 也 需 相 對 的 提 1¾ 其清 所 須 清 洗 部 份 的 比 例 與 不 易清 清 洗 溶 液 也相 對 佔 有 舉 足 輕重 清 洗 槽 之 清 洗 液 的 補 充 與 更換 繪 示 --" 種 晶 圓 清 洗 設 備 的 部份 槽 1 0 和 一 外 槽 1 2 y 處 理槽 至 — 冷 卻 槽 1 4 ) 由 閥 1 控制 熱 槽 1 6 藉 由 閥 2 控 制 管 路以 此 外 外 槽 1 2 和 處 理 槽 10 使 處 理 槽 1 0 内 的 清 洗 液 能不 液 能 藉 由 管 路 1 8 由 外 槽 1 2 而 處 理 槽 1 0 多 餘 的 清 洗 液流 内 的 清 洗 液 處 於 動 態 平 衡 ，如 處 理 槽 1 0 内 的 晶 圓 ( 未 繪示 中 由 過 濾 器 1 8 2 逾 掉 晶 圓清t 442 33 9 V. Inventive Regulations (l) [Scope of the Invention] The present invention relates to a crystal J. In particular, it is a supplementary method for cleaning a light-furic Peroxide Mixture nitrogen solution. [Background of the Invention] It is a very important issue in the manufacturing process of semiconductor wafers. However, with the complicated development, it is necessary to use the cleaning ability to reduce the increase in the degree of component cleaning. In addition to its status, the following is a description of the conventional wafer method. Please refer to "No. 1". Its "He Yi Yuan" mainly includes a circulation of the bottom of a processing 10 through a pipeline to connect the pipeline: Another sulfuric acid predetermines whether or not to replenish the solution; there is also a pipeline 18 connected between them, and the cycle is interrupted, that is, the bottom of the cleaning of the outer tank 12 is conveyed to the processing tank 10, to the outer tank 12, and the processing tank 10 This can not only help the cleaning and placement), but also the method of replenishing the cleaning liquid in the circular cleaning tank during the circulation of the cleaning liquid, preventing sulfuric acid peroxygen and hydrogenated hydrogen (Sul 1 SP Μ) tank sulfuric acid / over-rolling How to reduce wafer contamination is »As the final product components become smaller and smaller, the round equipment also needs to be relatively improved. The proportion of cleaning parts that need to be cleaned and the cleaning solution that is not easy to clean also relatively occupy the cleaning liquid that plays an important role in the cleaning tank. Supplement and replacement drawing-" Part of the tank 10 and one outer tank 1 2 y of the wafer cleaning equipment Tank to — Cooling tank 1 4) The valve 1 controls the hot tank 16 and the valve 2 controls the pipeline. In addition, the outer tank 12 and the processing tank 10 enable the cleaning liquid in the processing tank 10 to be liquid-free and can be passed through the pipeline. 1 8 External tank 1 2 and processing tank 1 0 The cleaning liquid in the excess cleaning liquid stream is in dynamic equilibrium, such as wafers in processing tank 10 (not shown by filter 1 8 2
C:\Program Files\Patent\P-0142TW. ptd 第 4 I * 442339 五、發明說明（2) 洗時所產生的反應物。 然而，以晶圓清洗光阻之清洗的製程而言，所採用的 清洗液例如為硫酸（H2S04 )與過氧化氫（H202 )的混合液 ，一般所調配的硫酸與過氧化氩清洗液之體積濃度比約為 9 : 1 ，在經過連續的晶圓清洗之後，因為在製程中會間 斷由過氧化氫槽2 0加入H2〇2，清洗時部份H2S04因與光阻 反應而消耗掉，或因移走晶片時順便帶走些許清洗液，故 使得H2S04 /H202的濃度比持續降低，因此必須定時補充或 更換清洗液。 依據製程獲得的經驗，習知清洗液的補充方法係將閥 1先行打開讓所有處理槽1 0内的舊清洗液流到冷卻槽1 4後排出廠外，此將所有清洗液排空的動作總共約需1 2 小時。之後關閉閥1 ，再打開閥2和閥3以補充約5 5升 的112304和11202溶液（SPM)，而完成—次清洗液的補充 約費時3 0分鐘》 然而，上述的補充方法有其缺點：甴於h2o2間斷地加 入外槽1 2，且SPM與光阻反應時亦會產生水份’因此 外槽1 2液面持績過高，H2S04無法自動補入，因此會造成 清洗液濃度過低而降低清洗能力，並且習知補充清洗液的 方法每次要更換5 5升S PM的量，過於浪費’而補充時 間過長也都有可改進之處· 【發明之概述】 因此，本發明的目的便是提供—種晶圓清洗槽之清洗 液補充方法，使清洗液補充時能藉由所設置的液面感測器C: \ Program Files \ Patent \ P-0142TW. Ptd No. 4 I * 442339 5. Description of the invention (2) Reactants generated during washing. However, in terms of wafer cleaning photoresist cleaning process, the cleaning solution used is, for example, a mixed solution of sulfuric acid (H2S04) and hydrogen peroxide (H202), and the volume of the sulfuric acid and argon peroxide cleaning solution is generally adjusted. The concentration ratio is about 9: 1. After continuous wafer cleaning, H2O2 is intermittently added from the hydrogen peroxide tank 20 during the process. Part of the H2S04 is consumed by the photoresist during cleaning, or Because some cleaning fluid is taken away when the wafer is removed, the concentration ratio of H2S04 / H202 continues to decrease, so the cleaning fluid must be replenished or replaced regularly. According to the experience gained in the manufacturing process, the conventional method for replenishing the cleaning liquid is to open the valve 1 in advance and let the old cleaning liquid in all processing tanks 10 flow to the cooling tank 14 and then be discharged outside the factory. This action will drain all cleaning liquids. It takes about 12 hours in total. After that, valve 1 was closed, and then valve 2 and valve 3 were opened to replenish approximately 55 liters of 112304 and 11202 solutions (SPM), and the completion of the replenishment of the cleaning solution took about 30 minutes. However, the above-mentioned replenishment method has its disadvantages. ： The outer tank 12 is added intermittently at h2o2, and water will also be generated when the SPM reacts with the photoresist. Therefore, the outer tank 12 has a high liquid level and H2S04 cannot be automatically replenished, which will cause excessive cleaning solution concentration Low and reduced cleaning ability, and the conventional method of replenishing the cleaning solution requires replacing 5 5 liters of S PM each time, which is too wasteful, and the replenishment time is too long, there are improvements that can be made. 【Summary of the invention】 The object of the invention is to provide a cleaning liquid replenishing method for a wafer cleaning tank, so that the cleaning liquid can be replenished by the provided liquid level sensor.
C:\PrograniFiies\Patent\P-0142TW.ptd 第 5 頁 442339 五、發明說明（3) 自動感應補充’並且以少量多次的方式補充清 '先、 到減少更換清洗液時間並節省清洗液用量之=的液’而達 根據上述本發明之目的，所具以實施之晶。 清洗液補充方法包括： Βθ闯清洗槽之 於一外槽上兩液面刻度各設置一感測器； 利用置於較低液面刻度之感測器偵測外槽之主 面是否低於其液面，若是則進行後續步驟： π洗液液 僅進行一補充溶液的加入； 利用置於較高液面刻度之感測器偵測外槽之支 面是否高於其液面，若是則進行後續步驟；以及音洗液液 停止補充溶液的加入。 能更明 ’作詳 為讓本發明之上述和其他目的、特徵、和 顯易懂，下文特舉一較佳實施例，並配合所附點 細說明如下。 < 圖式說明： 來清洗晶圓的清 第1圖繪示一種半導體晶圓製程時用 洗槽系統。 【實施例說明】 請仍參照「第1圖」’仍以晶圓塗佈了光阻 Steag-AWP之S ΡΜ槽清洗的製程為例，原本整個晶^入主 洗系統的運作係配合軟體的設定採取自動控制的方式完成 ，其中當然也包括了清洗液的補充。自動清洗液補充的設 計是由未預熱的過氧化氫槽2 〇定期定量自動地補充h2〇2 至外槽1 2内，而且，於外槽1 2容器上各別標示有一C: \ PrograniFiies \ Patent \ P-0142TW.ptd Page 5 442339 V. Description of the invention (3) Automatic induction replenishment and replenishment with a small amount of replenishment. First, to reduce the time to replace the cleaning fluid and save the amount of cleaning fluid It is the liquid that is used to achieve the purpose of the present invention. Methods for replenishing the cleaning liquid include: Βθ washing the tank, one sensor on each of the two liquid levels on an outer tank; a sensor placed on a lower liquid level to detect whether the main surface of the outer tank is lower than The liquid level, if it is, then the next steps are performed: π washing liquid is only added with a supplementary solution; a sensor placed at a higher liquid level is used to detect whether the support surface of the outer tank is higher than its liquid level, and if it is, then The subsequent steps; and stop the addition of the replenishing solution. To make it clearer In order to make the above and other objects, features, and comprehensibility of the present invention comprehensible, a preferred embodiment is exemplified below, and a detailed description is given below in conjunction with the attached points. < Schematic description: Cleaning for cleaning wafers Figure 1 shows a tank cleaning system used in the semiconductor wafer manufacturing process. [Explanation of the embodiment] Please refer to "Fig. 1" again. The process of cleaning the S PM tank coated with photoresist Steag-AWP is still used as an example. The operation of the entire crystal system into the main cleaning system was coordinated with the software. The setting is completed by automatic control, which of course also includes the replenishment of the cleaning liquid. The design of automatic cleaning liquid replenishment is based on the unpreheated hydrogen peroxide tank 2 0 periodically and automatically replenishing h 2 0 2 into the outer tank 12, and the outer tank 12 is marked with a container.
C:\ProgramFiles\Patent\P-0142mptd 第 6 頁 442339 五、發明說明（4) m i η和f u 11的刻度，並且於相對應標示的位置上設置一液 面（f 1 u i d - 1 e v e 1 )感測器（未續'示）來控制清洗液的補 充，fu 11刻度上的感測器負責控制清洗液補充/更換時不 超過其液面，而一旦外槽1 2清洗液低於m i η的刻度，便 能藉由自動清洗液系統使閥2打開，由硫酸預熱槽1 6中 補充H2S04。實際應用於現有的晶圓清洗過程，由於習知 f u 1 1和m i η刻度間的距離過大，加上H2S04與光阻反應後會 產生碳’必須藉由加入H202與碳的反應形成二氧化碳（可 揮發掉）與水份’所以清洗液的量雖然H2S04不斷的消耗和 稀釋’卻不會少到使外槽1 2的清洗液液面低於m i η的刻 度’所以往往H2S04 /Η202濃度比已過低（_般jjzs〇4 /Η2 02濃 度需介於90/1 * 4〜7 ◦/〇· 7之間），而上述感 測器偵測啟動自動補充系統卻根本不會動作。也就是說現 今晶圓清洗的硫酸補充完全不是藉由感測器來债測，而是 憑著清洗液濃度需在一限定範圍内，累積經驗約1 2小時 需補充清洗液一次；並且補充時需排空舊的清洗液，再補 充加入H2S04 /Η202的溶液。 而本發明則欲採以液面為準的補充方式，使清洗液濃 度在容許範圍下’能逕由偵測濃度比例的變化來決定清洗 液的補充。本發明將習知full和min的刻度由「圖1」中 虛線所標示的位置移至實線所標示的位置，相對地也移動 了感測器，由「圖1」比較刻度的位置可知，本發明f u i ! 和min刻度的間距拉近許多’且fui i刻度較習知來得低， 前者可使定期僅補充少量的H2S〇4，而後者解決習知ful丨的C: \ ProgramFiles \ Patent \ P-0142mptd Page 6 442339 V. Description of the invention (4) The scale of mi η and fu 11 and set a liquid level at the corresponding marked position (f 1 uid-1 eve 1) The sensor (not shown) is used to control the replenishment of the cleaning liquid. The sensor on the fu 11 scale is responsible for controlling the cleaning liquid to be replenished / replaced not to exceed its liquid level, and once the outer tank 1 2 the cleaning liquid is lower than mi η Scale, the valve 2 can be opened by the automatic cleaning liquid system, and H2S04 can be supplemented by the sulfuric acid preheating tank 16. Actually applied to the existing wafer cleaning process, because the distance between the fu 1 1 and mi η scales is too large, and the reaction of H2S04 and photoresist will generate carbon '. Carbon dioxide must be formed by the reaction between H202 and carbon (may Volatile off) and water 'so although the amount of cleaning solution H2S04 is continuously consumed and diluted', it will not be so small that the liquid level of the cleaning solution in the outer tank 12 is lower than the scale of mi η ', so the concentration ratio of H2S04 / Η202 is often Too low (_ general jjzs〇4 / Η2 02 concentration needs to be between 90/1 * 4 ~ 7 ◦ / 〇 · 7), and the automatic detection system activated by the above sensors will not work at all. In other words, the sulfuric acid replenishment for wafer cleaning today is not measured by a sensor, but the concentration of the cleaning solution needs to be within a limited range. The accumulated experience needs to be replenished once every 12 hours; and Drain the old cleaning solution, and then add the solution of H2S04 / Η202. However, the present invention intends to adopt a liquid level-based replenishment method, so that the concentration of the cleaning liquid is within an allowable range, and the replenishment of the cleaning liquid is determined by detecting a change in the concentration ratio. In the present invention, the scale of the conventional full and min is moved from the position indicated by the dashed line in "Fig. 1" to the position indicated by the solid line, and the sensor is also moved relatively. From the comparison of the position of the scale in "Fig. 1", The distance between the fui! And the min scale of the present invention is much closer, and the fui i scale is lower than the conventional one. The former can periodically replenish only a small amount of H2S〇4, while the latter solves the conventional ful.
C:\Program Files\Patent\P-0142TW. ptd 第 7 頁 442339 五、發明說明（5) 液面過高造成加H202時可能使清洗液由溢出管路2 2溢出 的問題。 以下將針對本發明達成清洗液補充的方法作詳細說明 。雖然本實施例是以改變感測器所偵測液面來達成本發明 清洗液的補充作為說明，但並不限定於此一作法，只要使 晶圓清洗槽之清洗液是以液面為判斷來進行補充的方式即 〇 首先需藉由調整感測器的位置，即降低full和升高 m i η刻度的位置，使晶圓清洗過程中，一方面避免因加了 Η2〇2使外槽1 2的清洗液由溢出管路2 2溢出；一方面使 定期僅需補充少量的H2S04，該硫酸純度為9 6〜9 8%。 至於如何決定full和min刻度的間距，主要考量是取決於 清洗液的清洗能力，即清洗液之ISO4 /Ηζ〇2濃度在降至下 限9 0 / 1 · 4之前便進行清洗液的補充，這樣才能確保 清洗液的清洗能力不致太低’而由上述條件所得之補充時 間的間距大約是4小時會補充一次。因此本發明清洗液的 補充，在控制上’也可設定每4小時補充一次；或經由大 約4小時後液面降至的液面為min刻度位置，宗. 及*王猎由m i η 刻度上的感測器來偵測何時需補充清洗液：或是以i _ 者兼具的設定’即外槽1 2液面先低於min刻度或已超過 4小時來決定清洗液的補充。不論為上述何者之補充方1 的設定，皆能達成本發明少量補充清洗液和減少更彳奐# ^ 所耗費時間的目的’並且需配合下述的補充程序。 ' 现 在接收了需進行對清洗液補充的指示之後，如「_C: \ Program Files \ Patent \ P-0142TW. Ptd page 7 442339 V. Description of the invention (5) The problem that the cleaning liquid overflows from the overflow pipe 2 when H202 is added when the liquid level is too high. The method for replenishing the cleaning liquid according to the present invention will be described in detail below. Although this embodiment is described by changing the liquid level detected by the sensor to achieve the supplement of the cleaning liquid of the present invention, it is not limited to this method, as long as the cleaning liquid of the wafer cleaning tank is determined based on the liquid level The method of supplementation is to first adjust the position of the sensor, that is, to lower the full and increase the position of the mi η scale, so that during the wafer cleaning process, on the one hand, the outer tank 1 is prevented from being added by Η202. The cleaning liquid of 2 overflows from the overflow pipeline 2 2; on the one hand, only a small amount of H2S04 needs to be replenished regularly, and the purity of the sulfuric acid is 96 to 98%. As for how to determine the distance between the full and min scales, the main consideration depends on the cleaning ability of the cleaning solution, that is, the ISO4 / Ηζ〇2 concentration of the cleaning solution is supplemented before the lower limit of 9 0/1 · 4 In order to ensure that the cleaning ability of the cleaning solution is not too low, and the interval between the replenishment times obtained under the above conditions is about 4 hours, it will be replenished once. Therefore, the replenishment of the cleaning liquid of the present invention can also be set to be replenished every 4 hours in the control; or the liquid level that the liquid level drops to after about 4 hours is the min scale position, and * 王 猎 由 mi η on the scale Sensor to detect when the cleaning fluid needs to be replenished: or a combination of i ', that is, the liquid level of the outer tank 12 is lower than the min scale first or it has been more than 4 hours to determine the replenishment of the cleaning fluid. Regardless of the setting of Supplementary Party 1 above, it can achieve the purpose of inventing a small amount of replenishing cleaning solution and reducing the time consuming # ^, and it needs to cooperate with the following supplementary procedures. 'Now after receiving instructions to refill the cleaning fluid, such as "_
C:\Program Files\Patent\P~〇142Tff. ptd 第 8 ^ 442339C: \ Program Files \ Patent \ P ~ 〇142Tff. Ptd 8th ^ 442339
五、發明說明（6) 」中的閥2便會打開，使硫酸預熱槽i 6内的硫酸溶液# 加入外槽1 2内，此處與習知需先排出部份舊清洗液^ 補充時同時補充Ηβ〇4 /%02不同，由於本發明之清洗液補 充方法只需加入硫酸，因此所耗費的時間大約僅有丄〜2 分鐘。加入的硫酸量是由fu 1 1刻度的感測器來控制，也就 是加入硫酸後外槽1 2的清洗液液面需低於ful丨刻度，’一 般可以fu 11刻度的感測器偵測硫酸溶液停止加入，或加入 一定量的硫酸，如配合本發明所設定的條件約需加入2〜 3升的硫酸。之後，便可藉由感測器的自動馈測，大約每 4小時後再進行另一次的清洗液補充，每次大約補充約2 〜3升的硫酸。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明’任何熟習此技藝者’在不脫離本^明之精 神和範圍内’當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式之符號說明】 10.......處理槽 1 、2、3 ... 12........外槽 14.......冷卻槽 16.....硫酸預熱槽 18........管路 18 2.....過濾器 20.....過氧化氫槽 2 2......溢出管路V. Description of the invention (6) The valve 2 in "" will open, so that the sulfuric acid solution # 6 in the sulfuric acid preheating tank i 6 is added to the outer tank 12 and here and some conventional cleaning fluids need to be drained first. ^ Supplement At the same time, 同时 β〇4 /% 02 is different. Since the cleaning solution replenishment method of the present invention only needs to add sulfuric acid, the time consumed is only 丄 ~ 2 minutes. The amount of sulfuric acid added is controlled by a fu 1 1 scale sensor, that is, the level of the cleaning liquid in the outer tank 12 after adding the sulfuric acid must be lower than the ful 丨 scale. 'Usually, it can be detected by a fu 11 scale sensor. Stop adding the sulfuric acid solution, or add a certain amount of sulfuric acid. According to the conditions set by the present invention, about 2 to 3 liters of sulfuric acid need to be added. After that, the sensor can be used for automatic measurement, and another cleaning solution replenishment is performed approximately every 4 hours, and approximately 2 to 3 liters of sulfuric acid are replenished each time. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention, 'any person skilled in the art' can do some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. [Description of Symbols in the Drawings] 10 ....... Treatment Tanks 1, 2, 3 ... 12 ........ Outer Tank 14 ....... Cooling Tank 16 ... .. Sulfuric acid preheating tank 18 ........ Line 18 2 ..... Filter 20 ..... Hydrogen peroxide tank 2 2 ... Overflow line
C:\ProgramFiles\Patent\P-0142TW.ptd 第 9 頁C: \ ProgramFiles \ Patent \ P-0142TW.ptd page 9