TW430925B - Ion implantation method and structure for increasing the breakdown voltage of the high voltage device - Google Patents

Ion implantation method and structure for increasing the breakdown voltage of the high voltage device

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Publication number
TW430925B
TW430925B TW88107495A TW88107495A TW430925B TW 430925 B TW430925 B TW 430925B TW 88107495 A TW88107495 A TW 88107495A TW 88107495 A TW88107495 A TW 88107495A TW 430925 B TW430925 B TW 430925B
Authority
TW
Taiwan
Prior art keywords
increasing
high voltage
ion implantation
implantation method
breakdown voltage
Prior art date
Application number
TW88107495A
Other languages
Chinese (zh)
Inventor
Hung-De Su
Chung-Rung Lin
Jung Chen
Wen-Ding Ju
Hung-Jeng Sung
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW88107495A priority Critical patent/TW430925B/en
Application granted granted Critical
Publication of TW430925B publication Critical patent/TW430925B/en

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

An ion implantation method for increasing the breakdown voltage of the high voltage device comprises the steps of: first, after forming a first type well, using the shallow trench isolation process to form an isolation region in the first type well; and forming a low voltage well below the isolation region by implanting, so as to form a channel stop layer. Therefore, the channel stop is added, without changing the feature of the high voltage device and adding an extra photoresist layer, to increase the breakdown voltage of the device thereby increasing the isolation degree between high voltage devices.
TW88107495A 1999-05-07 1999-05-07 Ion implantation method and structure for increasing the breakdown voltage of the high voltage device TW430925B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88107495A TW430925B (en) 1999-05-07 1999-05-07 Ion implantation method and structure for increasing the breakdown voltage of the high voltage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88107495A TW430925B (en) 1999-05-07 1999-05-07 Ion implantation method and structure for increasing the breakdown voltage of the high voltage device

Publications (1)

Publication Number Publication Date
TW430925B true TW430925B (en) 2001-04-21

Family

ID=21640590

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88107495A TW430925B (en) 1999-05-07 1999-05-07 Ion implantation method and structure for increasing the breakdown voltage of the high voltage device

Country Status (1)

Country Link
TW (1) TW430925B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237206B2 (en) 2008-08-12 2012-08-07 United Microelectronics Corp. CMOS image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for CMOS image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237206B2 (en) 2008-08-12 2012-08-07 United Microelectronics Corp. CMOS image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for CMOS image sensor
US8673669B2 (en) 2008-08-12 2014-03-18 United Microelectronics Corp. Method of making a CMOS image sensor and method of suppressing dark leakage and crosstalk for a CMOS image sensor

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