TW429630B - Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash device
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Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash device
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TW88119741A1999-11-111999-11-11Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash device
TW429630B
(en)