TW429630B - Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash device - Google Patents
Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash deviceInfo
- Publication number
- TW429630B TW429630B TW88119741A TW88119741A TW429630B TW 429630 B TW429630 B TW 429630B TW 88119741 A TW88119741 A TW 88119741A TW 88119741 A TW88119741 A TW 88119741A TW 429630 B TW429630 B TW 429630B
- Authority
- TW
- Taiwan
- Prior art keywords
- decrease
- tunneling oxide
- manner
- sine
- generation rate
- Prior art date
Links
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- Non-Volatile Memory (AREA)
Abstract
This invention is about a method for decreasing electric charges trapped by the tunneling oxide when electrically erasable and programmable read-only memory device (EEPROM) performs the erasing procedure. During the whole erasing procedure, a voltage bias is added to channel region while source region as well as drain region are floating. At the same time, a voltage with a sine cutting-waveform is added to the control gate such that electrons, which are located on the floating gate, can penetrate tunneling oxide, which is located on top of the channel region, and are removed through channel region. The voltage with a sine cutting-waveform can be used to decrease the electric field intensity of the tunneling oxide so as to reduce the electrons trapped by the tunneling oxide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88119741A TW429630B (en) | 1999-11-11 | 1999-11-11 | Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88119741A TW429630B (en) | 1999-11-11 | 1999-11-11 | Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash device |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429630B true TW429630B (en) | 2001-04-11 |
Family
ID=21643006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88119741A TW429630B (en) | 1999-11-11 | 1999-11-11 | Using sine cutting-waveform channel erase manner to decrease the generation rate of oxide trapping charge for flash device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW429630B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102945850A (en) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | Image flash memory device and operating method thereof |
-
1999
- 1999-11-11 TW TW88119741A patent/TW429630B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102945850A (en) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | Image flash memory device and operating method thereof |
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Legal Events
Date | Code | Title | Description |
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GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |